WO2019002082A1 - Procédé de réglage d'un système d'éclairage pour la microlithographie - Google Patents

Procédé de réglage d'un système d'éclairage pour la microlithographie Download PDF

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Publication number
WO2019002082A1
WO2019002082A1 PCT/EP2018/066557 EP2018066557W WO2019002082A1 WO 2019002082 A1 WO2019002082 A1 WO 2019002082A1 EP 2018066557 W EP2018066557 W EP 2018066557W WO 2019002082 A1 WO2019002082 A1 WO 2019002082A1
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WO
WIPO (PCT)
Prior art keywords
illumination
manipulator
freedom
individual
radiation
Prior art date
Application number
PCT/EP2018/066557
Other languages
German (de)
English (en)
Inventor
Matthias Manger
André ORTHEN
Daniel Runde
Christoph Petri
Original Assignee
Carl Zeiss Smt Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss Smt Gmbh filed Critical Carl Zeiss Smt Gmbh
Publication of WO2019002082A1 publication Critical patent/WO2019002082A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/62—Optical apparatus specially adapted for adjusting optical elements during the assembly of optical systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system

Definitions

  • the invention relates to a method for adjusting an illumination system which comprises an illumination beam path for illuminating a mask plane of a microlithography projection exposure apparatus.
  • lithographic projection exposure methods are predominantly used today.
  • a pattern arranged on a mask or a reticle is positioned in a projection exposure apparatus between an illumination system and a projection objective in the region of a mask or object plane of the projection objective and illuminated with an illumination radiation shaped by the illumination system.
  • the radiation which is changed by the pattern passes through the projection lens, whereby the pattern is imaged onto a radiation-sensitive layer of a substrate.
  • An illumination system used in this case generally contains a plurality of optical modules, with which an illumination beam path is formed in the illumination system.
  • DE 10 2012 209 412 A1 describes such an illumination system, which comprises as optical modules a so-called field facet mirror and a so-called pupil facet mirror.
  • an adjustment device in the form of a frame are specified on the mounting positions for the individual optical modules. Due to the steadily increasing demands on the optical properties of lighting systems, the mechanical installation tolerances of the optical modules on the frame are often too large to ensure the desired optical properties in the installed state.
  • the above object can be achieved according to the invention, for example, with the method described below for adjusting a lighting system.
  • the illumination system comprises an illumination beam path for a multiplicity of individual beams for illuminating a mask plane of a projection exposure apparatus for microlithography, and a manipulator system having multiple manipulator degrees of freedom for changing the configuration of the illumination beam path, the illumination beam path extending from a radiation source of the individual beams up to and including the mask plane.
  • the method includes selecting one or more of the individual beams, one or more reference surfaces extending transversely of the illumination beam path, and one or more beam spots of the selected one or more selected beams on the selected reference surface (s).
  • the method comprises determining a respective nominal value of at least one geometric state parameter of the corresponding individual beam at the selected beam spot (s) by means of beam retrace calculation based on optical design data of the illumination system, determining a respective measured value of the at least one geometric state parameter at the selected beam spot (s) by means of optical Measurement, as well as a determination of travel settings for the manipulator degrees of freedom of the manipulator system for approaching the at least one geometric state parameter at the one or more selected Anstrahl- points to the respective target value.
  • the optical properties of the illumination system can be significantly improved.
  • the at least one geometrical accessory parameter of the corresponding individual beam comprises a spatial position indication and / or a direction indication of the individual beam at the corresponding beaming point.
  • At least the mask plane is selected as a reference surface.
  • the reference surfaces can be configured in particular as levels.
  • the illumination system has a plurality of optical str modules arranged substantially parallel to or along different system surfaces, and at least one of the system surfaces is selected as the reference surface.
  • Such optical modules can be optical arrangements comprising a plurality of optical elements in the illumination beam path, eg as a field facet mirror or as a pupil facet mirror.
  • the optical elements may include mirrors and / or lenses.
  • an optical module can also comprise only one optical element, as is the case, for example, with a G mirror.
  • a plurality of injection points are selected on each of a plurality of selected reference surfaces.
  • respective firing points are selected on a plurality of the selected reference surfaces.
  • the illumination system is part of the projection exposure apparatus for microlithography and the measured value determination takes place in a plane downstream of a projection objective of the projection exposure apparatus, in particular in the wafer plane.
  • the determination of the respective measured value takes place by determining a position of an intensity distribution of a measuring radiation irradiated onto the mask plane via the illumination beam path in the mask plane by means of a position detector arranged in the mask plane or a plane conjugate thereto, in particular the wafer plane.
  • the determination of the respective measured value takes place by determining an angle-resolved intensity distribution of a measuring radiation irradiated onto the mask plane via the illumination beam path at at least one location of the mask plane or a plane conjugate thereto by means of a direction measuring device. According to a further embodiment, the determination of the respective measured value takes place by determining a centering deviation of a tion beam guided measurement radiation on at least one optical element within the illumination system.
  • the illumination beam path is designed to be irradiated on the input side with the illumination radiation in the form of a diverging input shaft emanating from a source point and propagating in a direction of irradiation.
  • a measurement radiation source is used for the measured value determination, which is configured to irradiate the measurement radiation from a plurality of locations, offset with respect to the source point transversely to the irradiation direction, onto the illumination system for determination of the at least one state parameter.
  • the illumination beam path is the beam path used in the exposure mode of the projection exposure system.
  • Locations offset transversely to the irradiation direction are to be understood as locations which are offset in a direction which contains a vertical component to the irradiation direction, in particular locations which are offset in one direction, which is from the normal to the irradiation direction a maximum of 50 °, in particular a maximum of 30 ° or deviates by a maximum of 10 °.
  • the measuring radiation source comprises a point radiation source, which is mounted displaceably transversely to the direction of irradiation.
  • the measuring radiation source comprises a surface radiation source, the Abstrahlf kaue is aligned transversely to the direction of irradiation.
  • the illumination system has a pupil facet optic arranged in a pupil plane of the illumination system with a plurality of individual optics and a field facet optic arranged in a plane conjugated to the mask plane, wherein the field facet optic has a plurality of further individual optics configured for this purpose are to irradiate the individual optics of the pupil facet optics for the respective formation of a radiation channel of the beam path of the illumination radiation. Furthermore, the respective nominal value as well as the respective measured value of the minimum least one geometric state parameter for several of the radiation channels determined.
  • the determination of the travel setting positions is carried out by optimizing a target function, which comprises a sensitivity matrix.
  • the sensitivity matrix defines a relationship between a StelSwegs vector describing the steep-path settings and a state vector comprising a plurality of state parameters.
  • the manipulator degrees of freedom of the manipulator system comprise a plurality of discretized manipulator degrees of freedom, in which the respectively determined steep path setting is selected from a predefined set of discretized values. Discretized values are to be understood as values that do not continuously adjoin one another. In particular, the discretized values have a distance of at least 1% or at least 5% of the maximum travel from their respective adjacent values.
  • the determination of the steep-path settings of the discretized manipulator degrees of freedom comprises a first optimization of a target function in which at least one of the discretized manipulator degrees of freedom is kept constant.
  • the determination of the steep-path settings of the discretized manipulator degrees of freedom comprises a further optimization of the objective function in which at least one discretized manpulator degree of freedom, which was varied during the first optimization, is kept constant.
  • the illumination system has a pupil facet optic arranged in a pupil plane of the illumination system with a plurality of individual optics and a field facet optic arranged in a plane conjugate to the mask plane, wherein the field facet optic has a plurality of further single optics, which are configured to irradiate the individual optics of the pupil facet optics for the respective formation of a radiation channel of the beam path of the illumination radiation.
  • the at least one state parameter is determined for a plurality of the radiation channels.
  • the individual optics of the field facet mirror can be controlled for the individual activation of the corresponding radiation channel, and different radiation channels of the illumination system are successively activated to determine the measured values. At the same time, the other radiation channels are deactivated at the same time. For the respective active radiation channel, a position of an intensity distribution of the measurement radiation in the mask plane is determined.
  • At least one of the individual optics of the fiddle facet mirror is assigned to a group of individual optics of the pupil facet mirror and can be adjusted for the respective activation of different radiation channels by irradiation of different single optics of the assigned group. Furthermore, according to this embodiment, in the successive activation of the different radiation channels, the radiation channels assigned to the group of individual optics are activated one after the other.
  • the illumination system comprises a pupil facet optic arranged in a pupil plane of the illumination system with a plurality of individual optics, via which a respective different radiation channel of the illumination beam path runs. Furthermore, according to this embodiment, a centering deviation of at least one of the radiation channels is determined on the associated single optical system and the measured value of the at least one state parameter is determined by means of the ascertained centering deviation.
  • the measuring radiation has a wavelength which deviates from the wavelength of an illumination radiation. In particular, the measuring radiation is visible light while it is the illumination radiation is EUV radiation. According to a further embodiment, the measurement radiation has the same wavelength as the illumination radiation; in particular, the measurement radiation is the illumination radiation.
  • the invention further provides a method for adjusting an illumination system, which comprises an illumination beam path for illuminating a mask plane of a projection exposure apparatus for the microlithography and a manipulator system having a plurality of discretized manipulator degrees of freedom for changing the configuration of the illumination beam path.
  • travel settings for the discretized manipulator degrees of freedom of the manipulator system for approximating at least one geometric state parameter of the illumination beam path to a respective desired value are determined by selecting from a predefined set of discretized values.
  • the determination of the travel settings of the discretized manipulator degrees of freedom comprises a first optimization of a target function in which at least one of the discretized manipulator degrees of freedom is kept constant.
  • the determination of the travel path settings of the discretized manipulator degrees of freedom comprises a further optimization of the objective function in which at least one discretized manipulator degree of freedom, which was varied during the first optimization, is kept constant.
  • the illumination beam path is configured to guide a plurality of individual beams and extends from a radiation source of the individual beams up to and including the mask plane, the method further comprising the steps of: selecting one or more of the individual beams, one or more transverse to the illumination beam path extending reference surfaces as well as one or more irradiation points of the selected individual beam (s) on the selected reference surface (s), determining the respective desired value of the at least one geometrical accessory Standparameters of the corresponding individual beam at the one or more selected Anstrahlddlingen by means of ray tracing calculation based on optical design data of the illumination system, and determining a respective measurement of the at least one geometric state parameter at the selected Anstrahlddlingen or by optical measurement, and wherein the Steilwegeinwolfen to approximate the at least one geometric state parameter the one or more selected Anstrahlddlingen to the respective setpoint by selecting from the predetermined amount of discretized values are determined.
  • exemplary embodiments or variants, embodiments, exemplary embodiments or variants can be correspondingly transferred to the above-mentioned adjustment method, in which a selection takes place from a predefined set of discretized values, and vice versa.
  • the features specified with regard to the embodiments listed above or below, exemplary embodiments or variants, etc. of the adjustment device according to the invention can be correspondingly transferred to the adjustment method according to the invention.
  • FIG. 1 shows an embodiment of an adjustment device for adjusting an illumination system of a projection exposure apparatus for microlithography with a measuring device operated in a first measuring mode
  • FIG. 2 shows a sectional view of an embodiment of a projection exposure apparatus for microlithography with an illumination system which can be adjusted by means of the adjustment device according to FIG. 1 and which comprises a field facet mirror and a pupil facet mirror, FIG.
  • FIG. 3 shows a plan view of the field facet mirror and a pupil facet mirror according to FIG. 2, FIG.
  • FIG. 4 shows an illustration of the adjusting device according to FIG. 1 for illustrating the operation of a second measuring mode of the measuring device
  • FIG. 5 shows an illustration of the adjustment device according to FIG. 1 for illustrating the operation of a third measuring mode of the measuring device in a first embodiment
  • FIG. 6 shows an illustration of the adjustment device according to FIG. 1 for illustrating the operation of the third measuring mode of the measuring device in a second embodiment
  • a Cartesian xyz coordinate system is indicated in the drawing, from which the respective positional relationship of the components shown in the figures results.
  • the y-direction is perpendicular to the plane in this in, the x-direction to the right and the z-direction upwards.
  • FIG. 1 shows in a schematic view an embodiment of an adjustment device 60 for carrying out an adjustment method according to the invention for adjusting an illumination system 20 of a microlithography projection exposure apparatus 10, which is shown schematically in FIG. 2 and used to produce microstructured, e.g. integrated circuits containing components is configured.
  • the projection exposure apparatus 10 serves to transfer mask structures 42 arranged on an exposure reticle 40 to a photosensitive layer of a substrate 52 arranged in a wafer plane 53 of the projection exposure apparatus 10.
  • a substrate 52 so-called wafers made of silicon or other semiconductor material are usually used.
  • the projection exposure apparatus 10 contains an illumination radiation source 12, the above-mentioned illumination system 20, a reticle table for holding and positioning the exposure reticle 40, a projection objective 50 in the form of an imaging optical system with a plurality of optical elements Depositing the mask structures 42 on the substrate 52 in an exposure mode of the projection exposure apparatus 10 and a substrate table 54 for holding and positioning the substrate 52.
  • the image of the mask structures 42 on the substrate 52 via an imaging lens 50 through the imaging imaging beam path 48th
  • the illumination system 20 serves to irradiate an illumination radiation 14 with a suitable angular distribution onto an object field of the exposure reticle 40 arranged in a mask plane 44.
  • the illumination system 20 generates an illumination field 46 in the form of an intensity distribution of the illumination radiation 14 in the mask plane 44 on the object field.
  • the illumination system 20 in the embodiment shown comprises three optical modules.
  • the optical modules comprise a substantially parallel to or along a system surface 23 conjugated to the mask plane 44, also referred to field level, arranged field facet optics in the form of a field facet mirror 22, a pupil facet optics in the form of a pupil facet mirror 30, which in the Substantially parallel to or along a system surface 3, also called pupil plane of the illumination system 20, is arranged, and a so-called G-mirror 36.
  • the G-mirror 36 has a mirror surface 36a, which parallel to or along a system surface 41st is arranged.
  • a system area of the illumination system 20 is to be understood as an area parallel to or along which an optical module, such as the field facet mirror 22, the pupil facet mirror 30 or the G mirror 36 is arranged.
  • an optical module such as the present optical modules is a reflective optical module having a plurality of mirror elements
  • the system surface is substantially parallel to or along the reflective surfaces of the mirror elements.
  • the optical modules can also contain lenses. Therein, the system surfaces are substantially parallel to or along respective front or rear sides of the lenses.
  • the optical modules can also each contain only one mirror element or only one lens.
  • the illumination radiation 14 is generated by the abovementioned illumination radiation source 12, which is designed as a point radiation source, and is irradiated onto the field facet mirror 22 in the form of a diverging input wave 16 emanating from a source point 18 and propagating in an irradiation direction 58.
  • the wavelength of the illumination radiation 14 may, depending on the design of the projection exposure apparatus 10, in the UV wavelength range, e.g. at about 365 nm, 248 nm or 193 nm, or in the EUV wavelength region, i. in a wavelength range of less than 100 nm, in particular at a wavelength of about 13.5 or about 6.8 nm. In the case shown here, the illumination radiation 14 is around
  • the field facet mirror 22 comprises a two-dimensional grid of individual optics in the form of mirror elements 24.
  • the individual optics may also be designed as lenses.
  • the field facet mirror 22 according to FIG. 2 is shown in plan view with an exemplary embodiment of the grid with three by three mirror elements 24.
  • the field facet mirror 22 may comprise fewer or even more, in particular several hundred, mirror elements 24.
  • the respective shape of the mirror elements 24 is adapted to the shape of the illumination field 46 in the mask plane 44 and therefore rectangular or sickle-shaped.
  • the illumination field 46 is understood to be the area on the exposure reticle 40 that is illuminated by the scanner slot at a given time.
  • the two-dimensional grid of the mirror elements 24 is in orthogonal to the embodiment shown.
  • Fig. 2 is the field facet mirror
  • FIG. 22 is a sectional view taken along section line 26 of FIG. 3.
  • FIG. Along this section line 26, three mirror elements 24-4 to 24-6 are arranged.
  • Each of the mirror elements 24 of the field facet mirror 22 is mounted individually adjustable by means of a respective manipulator 28-4 in the form of an actuator. In particular, individual tilting of the respective mirror element 24 about two mutually orthogonal tilt axes is possible.
  • the executed as actuators manipulators 28-4 can be controlled centrally.
  • the pupil facet mirror 30 likewise comprises a two-dimensional arrangement of individual optics in the form of mirror elements, which are designated by the reference numeral 32. 3, the pupil facet mirror 30 is shown in plan view with an exemplary embodiment of an array of thirty-six mirror elements 32.
  • the pupil facet mirror 30 may comprise fewer or even more, in particular several hundred, mirror elements 32.
  • the number of mirror elements 32 of the pupil facet mirror 30 is four times greater than the number of mirror elements 24 of the field facet mirror 22.
  • the number of mirror elements 32 of the pupil facet mirror 30 may also be comparatively greater or lesser , in particular, it may correspond to the number of mirror elements 24 of the field facet mirror 22.
  • the mirror elements 32 are hexagonal in the embodiment shown and arranged along concentric circles, so that the overall arrangement is similar to a honeycomb structure.
  • FIG. 2 shows the pupil facet mirror 30 in a sectional view along the section line 33 from FIG. 3.
  • six mirror elements 32-4a, 32-4b, 32-5a, 32-5b, 32-6a and 32-6 b are arranged.
  • the structure of the facet mirrors 22 and 30 can in particular also be designed according to one of the variants described in US 2011/0001947 A1.
  • each of the mirror elements 24 of the field facet mirror 22 is assigned four mirror elements 32 of the pupil facet mirror 30 for forming a respective radiation channel 35.
  • each of the mirror elements 24-1 to 24-6 respectively associated with the same trailing digit and the letters "a", “b", “c” and “d” designated mirror elements 32 for example, the mirror element 24-4 Mirror elements 32-4a, 32-4b, 32-4c and 32-4d assigned.
  • Each of the thirty-six mirror elements 32-1a to 32-9d of the pupil facet mirror 30 is assigned a respective radiation channel 35-1a to 35-9d, which differs from the respective mirror element 24-1 to 24-9 of the corresponding mirror element 32
  • Field facet mirror 22 extends over the corresponding mirror element 32 and over the below explained in more detail G-mirror 36 up to the mask plane 44.
  • the corresponding mirror elements 32-1a to 32-9d of the pupil facet mirror 30 are illuminated by suitable tilting of the mirror elements 24-1 to 24-9 of the fiducial facet mirror 22. Since the mirror elements 24-1 to 24-9 can each illuminate only one of the mirror elements 32-1a to 32-9d, a maximum of nine of the radiation channels 35-1a to 35-9d can be activated simultaneously.
  • the illumination reticle 40 is illuminated with an annular angular distribution.
  • the illumination radiation 14 only by the mirror elements 32-1 b, 32-2b, 32- 3b, 32-6b, 32-9d, 32-8c, 32-7a and 32-4a, which along the outer ring of FIG. 3 are arranged, irradiated on the illumination field 46, ie only the radiation channels 35-1b, 35-2b, 35-3b, 35-6b, 35-9d, 35-8c, 35-7a and 35-4a are active.
  • the sectional view of Fig. 2 so that only the
  • Mirror elements 32-4a and 32-6b of the pupil facet mirror 30 are active, ie only these mirror elements are affected by the respectively associated mirror elements.
  • the mirror element 24-5 of the field facet mirror 22 is tilted in such a way that the radiation component of the input shaft 16 impinging on it does not impinge on the pupil facet mirror 30. All the radiation channels 35-5a to 35-5d assigned to the mirror element 24-5 are thus not activated in the setting of the illumination system 16 shown.
  • the G mirror 36 is a grazing incidence mirror, which is also called a "grazing incidence mirror.”
  • the wave radiated from the G mirror 36 onto the mask plane 44 also becomes an output wave 38 of the illumination system 20.
  • the illumination beam path 34 comprises a multiplicity of individual beams 39.
  • a single beam is understood to be a light path within the beam path represented by a line.
  • Each of the radiation channels 35-1b, 35-2b, 35-3b, 35-6b, 35-9d, 35-8c, 35-7a and 35-4a active in the setting illustrated in FIG. 2 comprises a bundle of individual beams ,
  • FIG. 2 only a few individual beams are shown in FIG. 2 by way of example. These are the radiation channel 35-4a in the Drawing plane limiting individual beams 39-1 and 39-3 and the centrally in the radiation channel 35-4a extending single beam 39-2. Furthermore, the individual beams 39-4 and 39-6 limiting the radiation channel 35-6b in the plane of the drawing and the single beam 39-5 extending centrally in the radiation channel 35-6b are shown. The central single-beam beams 39-2 and 39-5, which extend from the illumination radiation source 12 to the mask plane 44, are shown in FIG. 2 merely in the area between the illumination radiation source 12 and the field facet mirror 22 for the sake of simplicity of illustration.
  • the field facet mirror 22 is displaceably mounted in its position by means of a manipulator 28-1 relative to a frame element 29-1 of the illumination system 20 as a whole.
  • the manipulator 28-1 is in this case configured as an adjustment device with which several rigid body degrees of freedom, in particular all six rigid body degrees of freedom, ie translations and rotations in each case with respect to all three orthogonal spatial directions, as indicated in Fig. 2 by arrows, are adjustable.
  • the adjustment device can be manually adjustable or also have electrically controllable actuators.
  • the individual mirror elements 24-1 to 24-9 of the field facet mirror 22 are furthermore stored individually adjustable by means of the manipulators 28-4.
  • each of the mirror elements 24 can be tilted about two mutually orthogonal tilt axes.
  • the manipulators 28-4 in this embodiment 9x2, so eighteen manipulator degrees of freedom.
  • Both the pupil facet mirror 30 as a whole and the G mirror 36 are mounted in position adjustable by means of a corresponding manipulator 28-2 or 28-3 relative to a frame element 29-2 or 29-3 of the illumination system 20.
  • the manipulators 28-2 and 28-3 are each configured as an adjustment device, with which several rigid body degrees of freedom, in particular all six rigid body degrees of freedom, ie translations and rotations with respect to all three orthogonal spatial directions , are adjustable.
  • the can Adjustment devices be manually adjustable or electrically controllable
  • the manipulators 28-1, 28-2, 28-3 and 28-4 described above form a manipulator system 28 of the illumination system 20.
  • the manipulator system comprises thirty-six manipulator degrees of freedom (six manipulator degrees of freedom of the multipliers 28-1, 28-2, respectively) and 28-3, and a total of eighteen manipulator degrees of freedom of the manipulators 28-4).
  • the positional adjustment of the manipulators 28-1, 28-2 and 28-3 are respectively stepwise, e.g. by incorporating spacer elements, also referred to as "spacers.” This discretizes the adjustability of the manipulators 28-1, 28-2 and 28-3 In an exemplary embodiment in which the manipulators 28-1, 28-2 and 28-3 In each case, the manipulator system has eighteen discretized degrees of freedom
  • the adjustable setting positions 110 in the two-dimensional positioning space xi-X2 are located at the crossing points of a two-dimensional grid, the pitch in the respective dimension being determined by the thickness of the two used "Spacers" is determined.
  • the adjustment device 60 illustrated in FIG. 1 serves for the adjustment of the illumination system 20 shown in FIG. 2.
  • the adjustment device 60 comprises a control device 98, a measuring device 66, a steep-path determiner 80 and optionally a soil value determining device 78 Determination of state parameter setpoints 75 from preset optical design data 79 of the illumination system 20.
  • the adjustment device 60 does not comprise a setpoint determination device 78, the state parameter setpoint values 75 are determined externally and provided to the adjustment device 60.
  • the adjustment device 60 can be provided as an independent laboratory device for adjusting the illumination system 20 before it is installed in a projection exposure apparatus 10.
  • some or all components of the adjustment device 60 may be integrated in a projection exposure apparatus 10 according to FIG. 2 for measuring the illumination system 20 in the installed state.
  • the illumination system 20 to be adjusted is part of the projection exposure apparatus 10 according to FIG. 2.
  • the measuring device 66 comprises a measuring radiation source 62 for generating measuring radiation 65, a position detector 68 and a direction measuring device which comprises a shadow mask 72 and a pupil camera 70.
  • the measuring radiation source 62 is configured analogously to the illumination radiation source 12 as a point radiation source for irradiating a divergent input shaft 16 originating from the source point 18 and propagating in the irradiation direction 58 and directed onto the field facet mirror 22.
  • the input shaft 16 generated by the measurement radiation source 62 differs from the input wave 16 generated by the illumination radiation source 12 only in its wavelength. While the illuminating radiation 14 is EUV radiation, visible light is used as the measuring radiation 65 in the present embodiment. Due to the catoptric design of the illumination system 20, the beam path of the visible measurement radiation 65 differs in the Illumination system 20 not of the illumination beam path 34 described above with reference to FIG. 2.
  • the measurement radiation 65 generated by the measurement radiation source 62 has the same wavelength as the illumination radiation 15.
  • the measurement radiation 65 is generated by the illumination radiation source 12 and is therefore identical to the illumination radiation 14.
  • the measuring radiation source 62 shown in FIG. 1 is mounted on a sliding carriage 64 for translational movement along a displacement direction 56 oriented transversely to the irradiation direction 58.
  • the use of the slide carriage 58 will be described below with reference to FIG. 5.
  • the measuring radiation source 62 is in its standard position, which corresponds to the position of the illumination radiation source 12 according to FIG. 2.
  • the position detector 68 and the direction measuring device comprising the shadow mask 72 and the pupil camera 70 may alternatively be used.
  • the position detector 68 is in use and in the mask plane 44 in the area of the illumination field 46 of the output shaft 38 of the measuring radiation 65.
  • the position detector 68 is replaced by the shadow mask 72 and a measurement is carried out by means of the downstream pupil camera 70.
  • the control device 98 serves to actuate the actuators 28 of the mirror elements 24 of the field facet mirror 22 by means of a control signal 100 and / or the displacement slide 64 for displacement of the measurement radiation source 62 by means of a control signal 102 when performing a measurement on the illumination system 20.
  • a control signal 100 In the measuring mode described below with reference to FIG. 1, in which the position detector 68 is arranged at the location of the illumination field 46 in the mask plane 44, only the control signal 100 is used.
  • This controls the actuators 28 of the field facet mirror 22 in successive measurement steps in such a way that only one of the radiation channels 35-1a to 35-9d is formed in each measurement step. This is done by respective illumination of the corresponding mirror element 32-1 a to 32-9d of the pupil facet mirror 30th
  • FIG. 1 illustrates the case in which the mirror element 24-4 of the field facet mirror 22 is adjusted for illuminating the mirror element 32-4a of the pupil facet mirror 30, whereby the radiation channel 35-4a is formed.
  • the radiation channel 35-4a generates a luminous spot on the mirror element 32-4a.
  • This luminous spot essentially corresponds to the irradiation points of all the individual beams 39 of the radiation channel 35-4a on the mirror element 32-4a, which, all neglecting mirror tolerances, coincide at the same point.
  • the luminous spot is designated below by way of example with the irradiation point 31-2 of the central individual beam 39-2 of the radiation channel 35-4a, which in particular coincides with the unillustrated irradiation points 31-1 and 31-3 of the individual beams 39-1 and 39-3.
  • the mask plane 44 is selected as the reference surface.
  • an intensity distribution of the measuring radiation 65 in the mask plane 44 serving as the reference surface is then recorded for one or more of the radiation channels 35-1 a to 35-9d.
  • one or more individual beams 39 are selected for each of the measured radiation channels 35-1 a to 35-9d.
  • the two are the radiation channel 35-4a in the cutting section formed by the plane of the drawing. n limiting single crimps 39-1 and 39-3 selected. The plane of the drawing intersects the radiation channel 35-4a centrally in the direction of the y-direction.
  • the selected individual beams 39-1 and 39-3 radiate the mask plane 44 selected as the reference surface at the beam spots 41-1 and 41-3 drawn in FIG. These spots 41-1 and 41-3 are selected for further evaluation. From the intensity distribution recorded by means of the position detector 68, in each case a measured value of a geometrical state parameter in the form of a spatial position of the corresponding irradiation point 41-1 or 41-3 in the mask plane 44 is determined for the selected irradiation points 41-1 and 41-3.
  • the spatial positions determined with regard to the spray points 41 - 1 and 41 - 3 may be merely the x coordinate of the individual beam spots, or alternatively both the x and y coordinates of the beam spots.
  • the measured values determined for all the measured radiation channels at the launching points in the mask plane 44 are transmitted to the travel-path determiner 80 as state parameter values 74-1.
  • the state parameters Readings 74-1 in the case of four readings for each of the thirty-six radiation channels comprise one hundred and forty-four individual values yi to ym.
  • At least one geometric state parameter in the form of a corresponding direction or a corresponding angle of incidence one or more selected individual beams 39 at one or more measuring locations or beaming points 84 of the mask plane 44.
  • the shadow mask 72 which is shown in the illustrated embodiment with only one aperture defining an injection point 84, is arranged in the mask plane 44.
  • the shadow mask 72 may also be provided with a plurality of openings for measuring the input beam angle at a plurality of launch points.
  • different groups of radiation channels e.g. first the group of the radiation channels 35-1a to 35-9a, then the group of the radiation channels 35-1b to 35-9b, the group of the radiation channels 35-1c to 35-9c as well as the group of the radiation channels 35-1 d to 35-9d formed by irradiation of the corresponding mirror elements 32 of the pupil facet mirror.
  • This formation of the different groups takes place by driving the field facet mirror 22 by means of the control signal 100.
  • FIG. 4 illustrates the illumination of the group of radiation channels 35-1a to 35-9a in the sectional view according to FIG. 1, in which the active radiation channels 35-4a, 35-5a and 35-6a are shown.
  • Each of the radiation channels 35-1a to 35-9a comprises a bundle of individual beams.
  • FIG. 4 only a few of these individual beams are shown by way of example, in some cases only in sections. Shown throughout are only the according to the measurement variant described here for the measurement of selected individual beams, these are the individual beams 39-2, 39-5 and 39-8 extending centrally in the relevant radiation channel 35-4a, 35-5a and 35-6a, respectively. In addition to the individual beams 39-2, 39-5 and 39-8, in the measurement variant described here with respect to the first group of the radiation channels 35-1a to 35-9a, the radiation channels 35-1, which are not illustrated centrally in FIG a, 35-2a, 35-3a, 35-7a, 35-8a, and 35-9a are selected for measurement.
  • an angle-resolved intensity distribution of the measuring radiation 65 is recorded at the spot-on point 84 forming the measuring location by means of the pupil camera 70 having a Fourier optics. From the recorded intensity distributions, for each radiation channel 35-1 a to 35-9d, the x and y components of the direction of the individual beam selected for the respective radiation channel (inter alia the individual beams 39-2, 39-5 and 39-8) are at the beaming point certainly.
  • the state parameters 74-2 thus include seventy-two individual values yi45 to y2i6 in the case of measurement at only one spot point 84 in the mask plane 44 according to the illustrated embodiment with the x and y single angle beam components of all thirty-six radiation channels.
  • the individual values of the state parameters 74-2 multiply corresponding.
  • the system area 31 corresponds substantially to the pupil plane of the illumination system 20.
  • the x and y components of the selected single rays in the mask plane 44 determined by the pupil camera 70 can be converted into respective x and y components of a spatial position of the respective individual beam in the system area 31 are converted.
  • respective geometric state parameters in the form of the positional positions of the launching points of the selected individual beams on the mirror elements 32 arranged in the system surface 31 can be determined.
  • the Anstrahlis 31-1, 31-5 and 31-8 of the individual beams 39-2, 39-5 and 39-8 are shown by way of example in Fig. 4.
  • the state parameters determined in this way, which relate to the system area 31, can be transmitted to the travel path sender 80 instead of or in addition to the state parameters 74-2.
  • centering deviations of the illumination beam path 34 on the individual mirror elements 32 of the pupil facet mirror 30 are determined .
  • a deviation of the position of one of the radiation channel on the corresponding pupil facet mirror 32-1 a to 32-9d light spots determined by a center of the respective pupil facet mirror determined.
  • Such a luminous spot is designated in FIG.
  • the displacement slide 64 is actuated by means of the control signal 102 for positioning the measurement radiation source 62 at different displacement positions and the respective resective total intensity of the illumination field 46 is recorded by means of the position detector 68.
  • the arrangement of the measuring radiation source 62 is exemplified in two different positions 62a and 62b.
  • the beam path 34 for the measuring radiation source in the position 62a is shown in FIG. 5 by means of solid lines, for the measuring radiation source in the position 62b by means of broken lines.
  • the irradiation point 31-2 of the measuring channel 35-4a shifts on the mirror element 32-4a of the pupil facet mirror 30, as indicated by reference numerals 31-2a and 31-2b.
  • the position of the illumination field 46 in the mask plane 44 does not change due to the displacement, the total intensity of the illumination field changes as soon as the irradiation point 31-2 no longer lies completely on the surface of the mirror element 32-4a of the pupil facet mirror 30.
  • the intensity profile recorded for a shift of the irradiation point 31-2 on the mirror element 32-4a in the x direction from the position detector 68 is illustrated by way of example in the I-PFx diagram, which is shown in the upper section of FIG. This intensity profile has a central region with a substantially constant intensity, at whose flanks the intensity drops to zero.
  • the mirror center 83 can be determined in the x-direction.
  • the point of origin selected as the origin of coordinates at which the measured value for the arrangement of the measuring radiation source 62 is in the standard position according to FIG. From the distance between the mirror center 83 and the vertical coordinate axis for the intensity, the centering deviation ⁇ of the irradiation point 31-2 of the measuring radiation source 62 in standard position on the mirror element 32-4a can thus be read off.
  • the centering deviation Ay of the irradiation point 31-2 of the measuring radiation source 62 in the standard position on the mirror element 32-4a can be determined by corresponding displacement of the measuring radiation source 62 perpendicular to the displacement direction 56 shown in FIG.
  • the centering deviation coordinates .DELTA. ⁇ and Ay which can also be referred to as "spot placement coordinates", are further processed as state parameter readings in the form of spatial position information of a selected individual beam 39 of the radiation channel 35-4a, eg the central single beam 39-2, at the selected launch point 31-2 ,
  • the centering deviation coordinates Ax and Ay determined in this way for all the radiation channels 35-1a to 35-9d are transmitted to the steep path determiner 80 as state parameter measured values 74-3.
  • the state parameter measurements 74-3 thus comprise seventy-two individual values V217 to y288.
  • the determination of the state parameter measurements 74-3 may also be made according to the embodiment illustrated in FIG.
  • a determination of the x and y components of the respective position of the illumination points or launching points generated in the standard position by the radiation channels 35 on the mirror elements 32 of the pupil facet mirror 30 when the measuring radiation source 62 is arranged in the standard position takes place 6 are exemplified with the beam spot 31-2 of the radiation channel 35-4a.
  • the measuring radiation source 62 which is arranged in the standard position according to FIG. 1, has the input shaft 16 originating therefrom.
  • As the radiation channel 35-4a to the Anstrahltician 31-2 on the mirror element 32-4a are shown in Fig. 6 with broken lines.
  • the determination of the respective position coordinates of the spots on the mirror elements 32 is carried out for all radiation channels 35-1a to 35-9d by means of the directional measuring device comprising the shadow mask 72 and the pupil camera 70 at a measurement location 84 in the mask plane 44, as already described above with reference to FIG 4 described. If the measurements for determining the state parameters 74-2 according to the embodiment illustrated in FIG. 4 have already taken place, the position coordinates of the beam spots on the mirror elements 32 can be taken from these measurement results.
  • the position of the irradiation point 31-2 is shown by way of example for the measuring channel 35-4a in the coordinate system (PFx / PFy) of the mirror element 32-4a.
  • a e.g. Arranged by means of a diffusing surface radiation source 86 is arranged.
  • This comprises a radiating surface 88 oriented transversely to the irradiation direction 58 for irradiating the field facet mirror 22 by means of a further input shaft 90 of the measuring radiation 65.
  • the radiating surface 88 is dimensioned so large that the respective mirror elements 32-1a to 32-9d of the pupil mirror Facet mirror 30 are outshined, ie the cross section of the respective radiation channel 35-1a to 35-9d at the location of the corresponding mirror element 32-1a to 32-9d exceeds the cross section of the respective mirror element.
  • FIG. 6 shows the beam path generated by the further input shaft 90 via the mirror element 32-4a of the pupil facet mirror, ie the beam path corresponding to the radiation channel 35-4a.
  • the intensity distribution detected by the pupil camera 70 with this beam path contains the intensity distribution shown in FIG
  • the light-emitting surface 94 shown in the PFx-PFy diagram has a substantially constant intensity.
  • the luminous surface 94 is hexagonal and thus reflects the shape of the mirror element 32-4a.
  • the distance ⁇ between the center 96 of the luminous area 94 and the irradiation point 31 -2 previously measured by the measuring radiation source 62 represents the centroid deviation of the irradiation point 31 -2 on the mirror element 32-4a.
  • the x and y components ⁇ and Ay of the distance ⁇ are determined with respect to all radiation channels 35-1a to 35-9d by means of the arrangement according to FIG. 6 and transmitted to the steep-path determiner 80 as state parameter measurements 74-3.
  • the state parameters thus comprise seventy-two individual values V217 to Y288.
  • the state parameter measured values 74-1 comprise measured values of state parameters in the form of spatial coordinates serving as spatial position information with respect to at least the individual beams 39-1 and 39-3 at the beaming points 44-1 and 44-3 in the mask plane 44.
  • Measurement values 74-2 comprise measured values of state parameters in the form of direction coordinates serving as directional data with respect to at least the individual beams 39-2, 39-5 and 39-8 at at least the beaming point 84 in the mask plane 44 and / or measured values of state parameters in the form of spatial position indications with respect to at least the individual beams 39-2, 39-5 and 39-8 at the beaming points 31-1, 31-5 and 31-8 in the system plane 31 serving as the pupil plane.
  • the state parameter measured values 74-3 comprise measured values of state parameters in the form of serving as spatial information centering deviations of the corresponding Anst Rahlmann of individual beams of different radiation channels 35-1 a to 35-9d arranged on the system surface 31 mirror elements 32-1 a to According to further embodiments, different and / or further state parameter measured values can be made available to the travel path determiner 80.
  • measured values of state parameters in the form of spatial position information and / or directional information with respect to arbitrary individual beams 39 at the corresponding launching points of any reference surfaces extending transversely to the illumination beam path 34 can serve as state parameter measured values 74.
  • reference surfaces besides the system surfaces 23, 31 and 41 of the illumination system 20, along which optical modules are arranged, or the mask plane 44, further surfaces extending transversely to the illumination beam path 34 may also be used.
  • the further reference surface 45 arranged between the system surface 31 and the system surface 41 in the beam path 34 is shown in FIG.
  • spatial position information regarding the individual beams 39-1 and 39-3 at the beam spots 45-1 and 45-3 at the reference surface 45 can be determined as state parameter measurements 74 and transmitted to the travel path determiner 80.
  • the position-determining means 80 are also provided with state parameter setpoint values 75, specifically for each of the measured values y M i to y M 288, a setpoint value y s i to y s 288. These individual values y s i to y s 288 form a desired state vector y **.
  • the state parameter setpoint values 75 are determined by a nominal value determination device 78 on the basis of optical design data 79 of the illumination system 20. This is done by simulation calculation of the illumination beam path 34 in the form of beam retrace calculation on the basis of the design data 79 on which the illumination system 20 is based.
  • the respective setpoint values 75 of the respective geometrical state parameter of the selected individual beams 39 are supplied at the selected launch points on the respective reference surface.
  • the setpoint determination device 78 can, as in the embodiment according to FIG. 1, be part of the adjustment device 60.
  • the state parameter setpoint values 75 can furthermore also be determined externally and made available to the travel path determiner 80 in advance.
  • the travel determiner 80 is configured to determine, by executing an optimization algorithm for optimizing a target function 82, also referred to as a merit function, a steep travel vector x whose vector elements Xi represent travel settings 76 for the individual manipulator degrees of freedom of the manipulator system 28 of the illumination system 20 described above ,
  • the travel settings 76 include the travel settings 76-1 for the individual degrees of freedom of the manipulator 28-1 of the field facet mirror 22, the travel settings 76-2 for the individual degrees of freedom of the manipulator 28-2 of the pupil facet mirror 30, the travel settings 76 -3 for the individual degrees of freedom of the G-mirror 36 and the travel settings 76-4 for the individual degrees of freedom of the manipulators 28-4 of the mirror elements 24 of the field facet mirror 22.
  • the optimization problem solved by the travel-path determiner 80 is as follows:
  • the sensitivity matrix A can be determined by means of a complex optical simulation.
  • the parameters Q nb denote a respective fixed limit value for a respective travel setting x ,.
  • a requirement can be taken into account according to which some or all of the manipulators 28 of the field facet mirror 22 can only be adjusted in a similar manner, in particular tilted. Such a requirement is also referred to as "common mode".
  • the corresponding degrees of freedom of the manipulators 28-1, 28-2, 28-3 and 28-4 are calculated on the basis of the travel path settings 76-1, 76-2, 76-3 and 76-4 determined by the steep path determiner 80 by optimization of the target function 82 adjusted.
  • the following is a procedure for determining the travel for the embodiment of the manipulator system 28 described above with reference to FIG. 1, in which at least some manipulator degrees of freedom, for example when using "spacers", can only be adjusted discretely.
  • a manipulator system 28 having only two degrees of freedom xi and ⁇ 2 is considered with reference to FIGS. 7 to 9.
  • the above-mentioned optimization problem is solved by minimizing the objective function 82, such as by quadratic optimization.
  • the solution obtained in the form of the travel vector x a in the continuous solution space is shown in FIG. 7 by way of example with a value of approximately 1.4 for xi and one A value of about -1, 6 for X2 drawn, ie x a «(1, 4, -1, 6). Due to the discretization of the solution space, only integer values are allowed for xi and X2.
  • the value of the target function 82 is now determined for all discrete solutions in a selected environment 112 of x a , and the solution with the lowest target function value is determined as the final steep path vector Xf.
  • the discrete path vector vectors (0; 0), (1; 0), (2; 0), (3; 0), (-1; , (-1; 1), (-1; 2) (-1; 3), (-2; 0), (-2; 1), (-2; 2), (-2; 3), ( -3, 0), (-3; 1), (-3; 2) and (-3; 3), and for each of the said positional vectors, the value of the objective function 82 is calculated.
  • the lowest target function value is obtained for the vector (3; -1), so that the vector (3; -1) is determined to be the final steep-path vector Xf.
  • the steep path vector x a in the continuous solution space is determined by minimizing the objective function 82 (in the illustrated example with the two manipulator degrees of freedom xi and X2: x a ⁇ (1, 4; -1, 6) ).
  • a repeated solution of the optimization problem listed above is achieved by minimizing the target function 82, but one or more manipulator degrees of freedom are "disabled", ie kept constant at the value of the travel vector X.
  • the minimization of the Target Function 82 Using a Limited Selection of Manipulator Degrees of Freedom
  • the closest discretized steep-path vector to the solution vector obtained is called x c .
  • the manipulator degree of freedom xi is kept constant at the value +1 and only the manipulator degree of freedom X2 is varied.
  • a repeated solution of the optimization problem listed above is achieved by minimizing the target function 82, again one or more manipulator degrees of freedom being "locked", ie kept constant at the value of the travel vector x c
  • Manipulator degrees of freedom differ from the group of manipulator degrees of freedom locked to determine x c .
  • the manipulator degrees of freedom released for determining x c are now locked and the locked manipulator degrees of freedom are released.
  • the discretized travel vector closest to the solution vector obtained during the optimization can be used as the final travel vector Xf for setting the manipulator system 28.
  • the obtained solution vector can be used as a new start vector for a new solution of the optimization problem while blocking another selection of manipulator degrees of freedom. This procedure can be repeated several times until the final travel vector Xf has been obtained.
  • the manipulator degree of freedom X 2 is kept constant at the value -1 during the repeated optimization and only the manipulator degree of freedom xi is varied.
  • the coordinates of the final travel vector Xf (3; -1) are determined.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

La présente invention concerne un procédé de réglage d'un système d'éclairage (20) comprenant un trajet du faisceau d'éclairage (34) pour une pluralité de faisceaux individuels (39) permettant d'éclairer un plan du masque (44) d'une installation d'exposition par projection pour la microlithographie et un système de manipulation (28) comportant une pluralité de degrés de liberté du manipulateur pour modifier la configuration du trajet du faisceau d'éclairage (34) est fourni. Le trajet du faisceau d'éclairage s'étend d'une source de rayonnement (18) des faisceaux individuels (39) jusqu'au plan du masque (44) inclus. Le procédé comprend les étapes suivantes : sélectionner un ou plusieurs faisceaux individuels (39), une ou plusieurs surfaces de référence (23 ; 31 ; 41 ; 44 ; 45) s'étendant de manière transversale au trajet du faisceau d'éclairage et un ou plusieurs points d'éclairage (31 -1, 31 -5, 31-8 ; 31-2 ; 41-1, 41 -3 ; 44-1, 44-3 ; 45-1, 45-3 ; 84) du ou des faisceaux individuels sélectionnés sur la ou les surfaces de référence sélectionnées, déterminer une valeur de consigne respective (75) d'au moins un paramètre d'état géométrique du faisceau individuel correspondant (39) au(x) point(s) d'éclairage sélectionné(s) par calcul de traçabilité du faisceau à partir des données de conception optique (79) du système d'éclairage, déterminer une valeur de mesure respective (74) d'au moins un paramètre d'état géométrique au(x) point(s) d'éclairage sélectionné(s) par mesure optique, et déterminer les réglages de trajet raides (76) pour les degrés de liberté du manipulateur du système de manipulation (28) permettant de rapprocher au moins un paramètre d'état géométrique au(x) point(s) d'éclairage sélectionné(s) à la valeur de consigne respective (75).
PCT/EP2018/066557 2017-06-26 2018-06-21 Procédé de réglage d'un système d'éclairage pour la microlithographie WO2019002082A1 (fr)

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WO2010008993A1 (fr) * 2008-07-17 2010-01-21 Nikon Corporation Élément à œil de mouche adaptatif et autres miroirs pour ultraviolet extrême et autres systèmes optiques
WO2010034674A1 (fr) 2008-09-25 2010-04-01 Carl Zeiss Smt Ag Appareil d’exposition par projection à fonction de réglage optimisée
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