WO2019001564A1 - Led制造方法及led、显示屏和电子设备 - Google Patents

Led制造方法及led、显示屏和电子设备 Download PDF

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Publication number
WO2019001564A1
WO2019001564A1 PCT/CN2018/093595 CN2018093595W WO2019001564A1 WO 2019001564 A1 WO2019001564 A1 WO 2019001564A1 CN 2018093595 W CN2018093595 W CN 2018093595W WO 2019001564 A1 WO2019001564 A1 WO 2019001564A1
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Prior art keywords
led
layer
grown
mask
growth
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PCT/CN2018/093595
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English (en)
French (fr)
Inventor
谢荣华
曲爽
刘康仲
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华为技术有限公司
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Publication of WO2019001564A1 publication Critical patent/WO2019001564A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

Definitions

  • the invention relates to the field of display screens, in particular to an LED manufacturing method and an LED, a display screen and an electronic device
  • Micro LED Micro Light Emitting Diode
  • TFT LCD Thin Film Transistor Liquid Crystal Display
  • AMOLED Active Matrix Organic Light Emitting Diode
  • Micro LED solutions mainly includes the following steps:
  • Small-sized LED chips prepared by a plurality of Micro LEDs are then batch-transferred into an array by batch transfer (such as printing or mounting) to form a large-sized display screen.
  • a major problem facing the prior art is the yield of batch transfer.
  • a mobile phone screen with a resolution of 1080P requires RGB (red, green, and blue) pixels totaling about 6.3 million, that is, a small-sized LED that needs to be transferred.
  • the chip reaches more than a thousand levels. Even if the chip transfer yield is above 99.99%, it will still cause bad defects (such as bright spots or black spots) on the entire screen due to the small size of the LED chip with some fault defects, which cannot meet the mass production and use. Claim.
  • the embodiment of the present invention provides a method for manufacturing a gallium nitride based diode (LED) display screen.
  • the gallium nitride-based diode LED display panel includes a plurality of color LEDs, and each color LED includes a gallium nitride (GaN) layer, an N-type doped GaN layer, a multiple quantum well layer, an AlGaN layer, and a P layer from bottom to top.
  • Type doped GaN layer wherein the method for manufacturing the LED display screen comprises:
  • a plurality of color LEDs are sequentially grown on the buffer layer, wherein growing each color LED includes:
  • the GaN layer is grown at a temperature of 350 to 500 degrees Celsius, wherein the gas pressure during the growth is 500 to 700 mBar, the V/III is 2000 to 5000, and the growth rate is 3 to 15 nm/min (nanometer/minute), wherein V/ III refers to a molar ratio of the group 5 element N to the group 3 element Ga, and the growth rate refers to an increase in the thickness of the generated substance in a certain period of time;
  • An N-type doped GaN layer is grown on the GaN layer at a temperature of 450 to 500 degrees Celsius, wherein the gas pressure during growth is 200 to 400 mBar, the V/III is 6000 to 10000, and the growth rate is 0.5 to 8 um/h (micron). /hour);
  • a multi-quantum well layer is grown on the N-doped GaN layer at a temperature of 400-500 degrees Celsius, wherein the gas pressure during the growth process is 200-400 mBar, the V/III is 12000-30,000, and the growth rate is 0.5-3 um/h. ;
  • the AlGaN layer is grown on the multiple quantum well layer at 400 to 500 degrees, wherein the gas pressure during the growth is 50-300 mBar, the V/III is 2000-5000, and the growth rate is 0.5-2 um/h;
  • the P-type doped GaN layer is grown on the AlGaN layer at 400 to 500 degrees, wherein the gas pressure during the growth is 200 to 400 mBar, the V/III is 6000 to 10000, and the growth rate is 0.5 to 8 um/h.
  • the gallium nitride-based LED refers to various chemical substances containing a CaN group.
  • GaN, AlGaN, P/N doped GaN, and the like all contain a CaN group.
  • the method provided in this embodiment allows the LED to grow at a specific temperature through some conditions, so that it can be grown in more heterogeneous media (such as a flexible medium such as PI), thereby facilitating LED transfer more conveniently (such as PI and all of the above things are transferred as a whole, and there is no need to cut, assemble, etc. as in the prior art, so that the requirements for mass production and use can be met.
  • the area of the LED to be grown is separated from the area where the LED is not required to be separated by a spacer with multiple holes, wherein
  • the layout of the multiple holes in the holed mask layer is the same as the layout of the LEDs that need to be grown, and the multiple holes are used to allow the chemicals required to grow the layers to pass through, thereby forming the layers of the LED.
  • Isolation through the isolation plate eliminates the need for traditional masking schemes, reduces processes and increases efficiency.
  • each color LED growth is performed in a corresponding growth device, and each production device includes an isolation board.
  • the spacer acts like a mask and is also referred to herein as a "mask.”
  • Each growth device includes a spacer plate that is simple to implement and easy to manufacture.
  • all color LED growth is performed in a growth device, and the growth device can be inserted and removed by a spacer corresponding to the LED of different colors.
  • the growth of different color LEDs is completed in sequence.
  • the separator material is stainless steel. Further, it may be a metal such as aluminum. These materials can act as barriers without affecting growth manufacturing.
  • the area of the LED to be grown is separated from the area where the LED is not required by the hole mask layer exposed by the plurality of holes, wherein, the layout of the plurality of holes in the hole mask layer is the same as the layout of the LEDs to be grown, and the plurality of holes are used to pass the chemicals required for growing the layers to form the layers of the LED.
  • a hole-free mask layer without holes is formed on the buffer layer, and then the light is passed through A hole mask is formed by exposing a plurality of holes.
  • the fifth and sixth possible implementations above use a masking method to separate regions where LEDs are to be fabricated and regions where LEDs are not required to be fabricated, and the process is mature and simple.
  • the hole-free mask layer is fabricated by a plasma-enhanced chemical vapor deposition (PECVD) method.
  • PECVD plasma-enhanced chemical vapor deposition
  • the heterogeneous medium is a flexible medium layer
  • the material of the flexible medium layer is polyimide (PI), or polymethyl methacrylate (PMMA), or polycarbonate (PC).
  • LEDs are grown on a flexible dielectric layer (LEDs can be grown directly on a flexible dielectric layer, or a layer of other material grown on a flexible dielectric layer, such as a drive tube, grown), followed by a flexible dielectric layer and above. Everything is transferred to a new substrate as a whole, so that it does not need to be cut into a small number of parts as in the prior art and then spliced into LEDs of the target size, thereby improving the transfer yield and making it more suitable for batch growth.
  • the material of the buffer layer is titanium (Ti) or graphite thin, or carbon nanotubes.
  • the present application also includes an LED (Light Emitting Diode) produced by the first aspect and various implementations of the first aspect.
  • LED Light Emitting Diode
  • the present application further discloses a display screen including a driving circuit, a plurality of light emitting diodes as disclosed in the second aspect, and a driving circuit for driving a plurality of light emitting diodes to emit light.
  • the present application further discloses an electronic device, including a processor, a memory, and a display screen as disclosed in the third aspect, the memory is configured to store instructions required for the processor to run, and the processor is configured to read and execute The memory stores the instructions and displays them through the driver circuit.
  • the present application discloses a method for manufacturing a gallium nitride based diode (LED) display panel, including:
  • FIG. 1 is a schematic diagram showing the layout of each pixel and sub-pixel in an LED display screen according to Embodiment 1;
  • FIG. 2 is a schematic diagram showing the layout of each pixel and sub-pixel in another LED display screen according to Embodiment 1;
  • FIG. 3 is a schematic cross-sectional view of a display screen including a Micro LED according to Embodiment 1;
  • Embodiment 4 is a schematic cross-sectional view of a Micro LED provided in Embodiment 1;
  • FIG. 5 is a schematic cross-sectional view of a display screen including a Micro LED provided in Embodiment 2;
  • FIG. 6 is a schematic cross-sectional view of a display screen including a Micro LED provided in Embodiment 3;
  • FIG. 7 is a flow chart of a method for manufacturing an LED display screen according to Embodiment 4.
  • FIG. 8 is a flow chart of a method for growing an LED according to Embodiment 4.
  • FIG. 9 is a schematic view showing a shape of a mask provided in Embodiment 4.
  • FIG. 10 is a schematic structural view of a mask device provided in Embodiment 5.
  • FIG. 11 is a schematic view of a growth apparatus provided in Embodiment 6;
  • FIG. 12 is a schematic view showing a layout of a mask in a growth apparatus according to Embodiment 6;
  • Figure 13 is a flow chart showing the growth using the growth apparatus provided in the sixth embodiment.
  • FIG. 14 is a schematic structural diagram of a display screen provided in Embodiment 9;
  • FIG. 15 is a schematic structural diagram of an electronic device according to Embodiment 10.
  • a top view of an LED display screen according to the present embodiment is similar to the display screen of the prior art.
  • the LED display screen is also a flat panel or a curved curved panel with an edge curved.
  • the display screen includes a plurality of pixels 10, each pixel comprising a plurality of sub-pixels (represented by reference numerals 11, 12, 13 in the figure), the sub-pixels including LEDs for illumination, typically including red (represented by R in the figure), green (indicated by G in the figure) and blue (represented by B in the figure) are three colors, and each sub-pixel can produce more colors in conjunction with the illumination.
  • the schematic diagram of the LED structure in the above embodiment is applicable to the structural diagrams of the ordinary LED and the Micro LED.
  • the graphics provided in the following embodiments are described by taking the Micro LED as an example.
  • the performance is larger.
  • Other structures are similar to those of the Micro LED, and therefore, the detailed description of the conventional LED structure will not be repeated in this application.
  • each sub-pixel has a rectangular shape, and each sub-pixel is arranged side by side in the order of R, G, and B; and in FIG. 2, each sub-pixel has a circular shape, and is mutually The triangles are arranged together.
  • the shape of the sub-pixels may also be elliptical, or other various shapes.
  • the interval between the two pixels is not limited, for example, may be the same as the interval between the sub-pixels, or may be several times the sub-pixel size (such as the diameter of a circle, the length of one side of a rectangle) to Dozens of times the distance.
  • the shapes, sizes, and spacings of the respective sub-pixels are not limited, they are not meant to be arbitrarily set, and those skilled in the art can understand whether the shape, the size, the pitch, or the like.
  • the parameters are all parameters that can be selected under the indicators required to display the product. The specific implementation of these parameters is the prior art (for example, it can be obtained by simulation, empirical value, testing, etc.), and is not described here. .
  • the shapes, sizes, intervals, and the like of the respective pixels or sub-pixels in FIGS. 1 and 2 are merely examples, and do not represent the same in the actual product.
  • each sub-pixel in the Micro LED display screen can be various, and several of the structures are described below through several embodiments.
  • FIG. 3 it is a cross-sectional view of a sub-pixel in the first display panel including the Micro LED.
  • the top-up direction of the light-emitting direction includes: a substrate, a flexible dielectric layer, a driving tube, a buffer layer, a Micro LED, and a transparent electrode. , bonding layer and cover plate, wherein:
  • the substrate serves to serve as a basic support, for example, to support the flexible dielectric layer so that no deformation occurs in the PI flexible medium during display production.
  • the material of the substrate is not limited as long as the hardware can satisfy the growth of the product.
  • glass can be used as the substrate material, and the thickness can be about 1 mm.
  • the flexible dielectric layer is located above the substrate, on the one hand for implementing some circuitry inside (ie, the material used to implement the circuit, such as copper foil, in the flexible dielectric layer), for example, for providing a connection power supply (not shown) ) with the circuit of the drive tube.
  • the flexible dielectric layer is also used to carry other layers thereon.
  • the flexible dielectric layer In the manufacturing process, it is sometimes necessary to transfer the flexible dielectric layer and a portion above the flexible dielectric layer to another medium (for example, another piece).
  • the glass substrate at this time, the flexible medium layer functions as a carrier.
  • the flexible dielectric layer may have a thickness of about 100 mm and, because it is a flexible medium, can also be bent to make a curved screen.
  • the specific material of the flexible medium is not limited, and a material such as PI (Polyimide, polyimide) or polymethyl methacrylate (PMMA) or polycarbonate (PC) can be usually used.
  • the flexible medium layer is an optional layer. If it is not necessary to manufacture a curved screen, or it is not necessary to transfer the flexible medium layer and the above layers, the flexible medium layer may not be provided.
  • the circuit in the flexible dielectric layer can also be implemented on the substrate (for example, when the substrate is glass, the circuit in the flexible dielectric layer can be realized in the glass), which is specifically implemented in the prior art, and is not described herein.
  • the drive tube is located above the flexible dielectric layer for driving each of the Micro LEDs. After the manufacturing is completed, the drive tube is also a thin plate-like "layer" as a whole (ie, the upper and lower surfaces are flat).
  • the driving tube type may be a TFT (Thin Film Transistor) driving tube or a CMOS (Complementary Metal-Oxide-Semiconductor) driving tube, and the thickness may be several tens of micrometers, for example, 20-30 mm.
  • the driving tube cooperates with the transparent electrode to supply power to the Micro LED, that is, the driving tube and the transparent electrode supply power to the Micro LED through the two ends of the power supply.
  • the drive tube material can be polysilicon.
  • the buffer layer material is located on the drive tube. If the lattice constants of each material are different, there will be a problem of lattice mismatch, resulting in a large number of lattice defects (lattice defects) between the materials, resulting in the quality of the Micro LED. Unstable.
  • a buffer layer can be added between the TFT driving tube and the Micro LED to alleviate the lattice mismatch between the materials.
  • the buffer layer also acts as a conductive (ie, electrically conductive between the drive tube and the Micro LED).
  • the material of the buffer layer is usually Ti (titanium), or a material such as graphite thin material or carbon nanotube, and the thickness can be relatively thin, for example, 0.5 mm.
  • Micro LED used for illumination, for example, is commonly used to emit one of red, green, and blue.
  • the thickness of the Micro LED is typically a few microns, for example, it can be 5 mm.
  • FIG. 4 it is a schematic cross-sectional view of a Micro LED structure, showing a "layer” level structure, including a P-type doped GaN (gallium nitride) layer, an AlGaN (aluminum gallium nitride) layer, and a multiple quantum well from top to bottom.
  • the P-type doped GaN layer is composed of P-type doped GaN
  • the multiple quantum well layer is composed of a plurality of quantized wells.
  • the material of GaN buffer is GaN, which is used to alleviate the lattice adaptation, so that the defect density of the Micro LED (such as the dislocation density is lower), to achieve better quality.
  • the thickness of the GaN buffer can be, for example, 15 nm.
  • P-type doped GaN and N-type doped GaN are used to form a PN junction.
  • the thickness of the N-type doped GaN may be, for example, 2 um, and the thickness of the P-type doped GaN may be, for example, 100 nm.
  • the positive and negative electrodes of the power supply are respectively connected. When specifically connected, the P-type doped GaN can be connected to the positive electrode through a transparent electrode, and the N-type doped GaN can be connected to the negative electrode through a driving tube and a circuit in the flexible dielectric layer.
  • multiple quantum wells are used to achieve luminescence.
  • multiple quantum wells are formed by superposing GaN and InGaN in sequence (the uppermost and lowermost ends are GaN), wherein each quantum well includes two upper and lower GaN and two InGaN (Indium Gallium Nitride) in the middle of GaN, and adjacent quantum wells can be multiplexed with one GaN.
  • quantum well 1 in FIG. 4 and quantum well 2 are multiplexed with one GaN.
  • the thickness of InGaN may be, for example, 3 nm, and the thickness of GaN may be, for example, 7 nm.
  • the AlGaN layer is an electron blocking layer composed of AlGaN for avoiding electron overcurrent and improving luminous efficiency.
  • the thickness of the AlGaN layer may be, for example, 80 nm.
  • the Micro LED is a transparent electrode with a thickness of 1 micron for use with the drive tube to power the Micro LED. Since the transparent electrode is in the light-emitting direction, a transparent material is required for the light to pass therethrough.
  • a material such as ITO (indium tin oxide) or ZnO (zinc oxide) can be used.
  • the transparent electrode is an adhesive layer for bonding the uppermost cover and the transparent electrode. Since the adhesive layer is also in the light-emitting direction, it is also necessary to use a transparent material. Usually, the adhesive layer may be a transparent polymer material such as silica gel having a thickness of about several micrometers, for example, about 5 mm.
  • the cover is located on the uppermost layer for protection and light transmission.
  • Glass is usually used and has a thickness of about several hundred microns, for example, 500 microns.
  • a mirror can be placed at a position opposite to the light exiting direction to reflect the light to the light exiting direction.
  • the light-emitting direction is upward, and therefore, a mirror (reflecting surface upward) may be disposed under the flexible medium layer or the substrate to allow the light to be reflected in the light-emitting direction.
  • the structure of the embodiment is realized in the vertical direction, and the implementation is relatively simple, and since the components are not required to be placed in the horizontal direction (side), the horizontal space (such as a device such as a sensor) can be fully utilized, and the space utilization rate and the integration degree are high. Moreover, each sub-pixel point can also be made smaller (no side space is required), so that more pixels can be placed in the same size space, and a larger resolution can be achieved.
  • the materials that the Micro LED passes through in the light-emitting direction are transparent materials with high light transmittance and better display efficiency.
  • this embodiment provides another cross-sectional structure of a display screen including a Micro LED.
  • a cross-sectional view of a second type of Micro LED the light exiting direction is downward.
  • the structure of each layer in this embodiment is substantially the same as that of the first solution.
  • the specific implementation of each layer can be designed based on the first solution, and details are not described herein again.
  • the drive tube is located between the Micro LED and the bonding layer, rather than between the buffer layer and the flexible dielectric layer as in the first embodiment.
  • the original circuit function of the transparent electrode can be implemented in a flexible dielectric layer. That is, in the present structure, the two extremely Micro LEDs connected to the power source can be powered by the driving tube and the circuit in the flexible dielectric layer.
  • the flexible medium layer Since the flexible medium layer is located in the light exiting direction, in order to prevent light from being blocked as much as possible, the flexible medium layer may be made of a light transmissive material such as graphene.
  • the material of the substrate should also be selected from a material having good light transmittance, for example, glass. Meanwhile, in order to distinguish from another substrate mentioned below, it is represented by "first substrate" in the drawing.
  • the substrate since the light-emitting direction is downward, that is, in the actual product, for a display screen that the user sees, the substrate is located at the top (the light-emitting direction faces the user), and the cover plate is located at the bottom.
  • the cover plate mainly functions as a support, similar to the function of the substrate, and therefore, in this embodiment, it can also be considered as a "substrate" (the second substrate as shown in the figure), the material Similar to the structure one, it is still possible to select a suitable material such as glass.
  • a mirror may be provided.
  • a mirror (reflecting surface facing downward) may be disposed between the driving tube and the Micro LED to reflect the light in the light outgoing direction.
  • the material of the mirror can be made of a material such as metal that can conduct electricity.
  • the implementation is relatively simple, and has the advantages of space utilization, high integration, and greater resolution.
  • it is easier to implement a buffer layer on a flexible dielectric layer (such as a PI material) and a micro LED on the buffer layer during fabrication.
  • this embodiment provides a cross-sectional structure of another display screen including a Micro LED.
  • the light-emitting direction in this embodiment is the same as that of the first type of Micro LED, and is an upward direction.
  • the drive tube is located between the flexible dielectric layer and the transparent electrode, rather than between the buffer layer and the flexible dielectric layer as in the first embodiment. At the same time, the position of the drive tube is on the side of the Micro LED and the buffer layer.
  • the protective layer functions to prevent unnecessary electrical conduction between the driving tube and the Micro LED to form problems such as short circuit, and therefore, an insulating material is required as a material of the protective layer (for example, silica gel, silicon dioxide).
  • the height of the driver tube is usually no buffer layer plus the height of the Micro LED layer, in order to make the height of the driver tube and the height of the Micro LED to make the whole structure more stable, it is also possible to add a height compensation between the driving tube and the transparent electrode.
  • a conductive material for example, gold or aluminum.
  • a mirror may also be provided. Specifically, a mirror (reflecting surface upward) may be disposed under the flexible medium layer or the substrate to reflect the light in the light outgoing direction.
  • the present embodiment provides an LED manufacturing method. It should be noted that the LED manufacturing methods of the present embodiment and the following embodiments are applicable to common LEDs including GaN-based and Micro LEDs. .
  • the method provided in this embodiment includes:
  • hetero medium in this embodiment refers to a medium which is inconsistent with the LED material, and the material of the LED is usually a GaN-based material, and therefore, “heterogenous medium” means a medium different from GaN.
  • the hetero medium may refer to a substrate (such as glass) or a flexible medium layer (such as PI).
  • the function of the buffer layer is to better grow the LED.
  • the specific principle and the selection of the buffer layer material have been described in the foregoing embodiments, and will not be described herein.
  • the fabrication of the buffer layer can be performed based on an existing process.
  • a glass substrate can be placed in a sputtering station by sputtering (sputtering in English, that is, spraying the buffer layer material from the top of the sputtering table onto the substrate).
  • the method achieves the fabrication of a buffer layer on a substrate.
  • a process such as annealing may be used to complete the fabrication of the buffer layer.
  • the thickness of the buffer layer can be 200 nm.
  • the material of the mask may be SiO2 (silica) and may have a thickness of 500 nm. Specifically, it can be manufactured by a plasma-enhanced chemical vapor deposition (PECVD) method, that is, the substrate on which the buffer layer is formed can be taken out from the sputtering table and then placed on a dedicated PECVD device to complete the masking.
  • PECVD plasma-enhanced chemical vapor deposition
  • the function of the mask is to prevent the area where the LED is not required to grow without growing the LED, that is, the area exposed in step S322 grows the LED, and the area covered by the mask does not grow the LED, of course, during the LED growth process.
  • Some substances are formed on the mask, which can be removed by, for example, the S328 etching step.
  • a photolithographic method can be used to expose a region of a color (such as blue) LED, and the specific implementation of the photolithography method is prior art.
  • a color LED such as blue
  • the blue LED is first manufactured.
  • the red or green LED may be fabricated first, and the present application is not limited thereto.
  • a rectangle is selected as the shape of the exposed area, and at the same time, a total of 2.1 million areas are exposed, each of which is 12*28 um (micrometers) in size, arranged neatly in the form of an array, and the line spacing in the array and The column spacing is set to 15um.
  • the LED can be grown in the exposed area, wherein "grow” is a special term in the field of LED manufacturing, which means that the exposed area is formed by superposing layers in layers.
  • the LED growth process can be carried out in a MOCVD (metalorganic chemical vapour deposition) device that controls the flow of some gases (or vaporized liquids). A chemical reaction takes place in the device to grow an LED. During the growth process, it is possible to determine when to stop or continue to grow by controlling the amount of chemically introduced and by detecting the thickness of each layer of the LED that has been grown.
  • MOCVD metalorganic chemical vapour deposition
  • the specific control and detection methods are prior art and will not be described here. The growth process will be specifically described below.
  • GaN buffer gallium nitride buffer
  • the GaN buffer is a layer of GaN used as a buffer layer.
  • the lithographic substrate with a buffer layer and a mask can be placed in an MOCVD apparatus, and the temperature is controlled at 350 to 500 degrees, and then TMGa (trimethylgallium) and NH3 (ammonia gas) are introduced. ) to form a GaN buffer.
  • TMGa trimethylgallium
  • NH3 ammonia gas
  • the growth pressure can be controlled at 500-700 mBar, V/III can be controlled at 2000-5000, and the growth rate can be controlled at 3-15 nm/min (nan/min).
  • the growth pressure refers to the gas pressure; V/III refers to the molar ratio of the group 5 element (N) to the group 3 element (Ga); and the growth rate refers to the increase in the thickness of the substance formed within a certain period of time.
  • N-type doped GaN is formed by introducing TMGa, NH3, and SiH4 (silane), wherein the silane is a dopant for forming N-type GaN, and the doping concentration may be 1E19/cm3.
  • the growth pressure can be controlled at 200-400 mBar, V/III can be controlled at 6000-10000, and the growth rate can be controlled at 0.5-8 um/h (micron/hour). ).
  • a multi-quantum well layer of a blue LED is grown under conditions of 400 to 500 degrees.
  • a multiple quantum well layer is formed by introducing TMGa, TMIn (trimethylindium) and NH3.
  • TMGa trimethylindium
  • TMIn trimethylindium
  • NH3 trimethylindium
  • the growth pressure can be controlled at 200-400 mBar
  • V/III can be controlled at 12000-30,000
  • the growth rate can be controlled at 0.5-3 um/h.
  • TMGa, TMAl (trimethylaluminum) and NH3 are passed through.
  • TMGa, TMAl (trimethylaluminum) and NH3 are passed through.
  • the growth pressure can be controlled at 50-300 mBar, V/III can be controlled at 2000-5000, and the growth rate can be controlled at 0.5-2 um/h (micron/hour).
  • P-doped GaN growing P-doped (or also referred to as "P-doped") GaN under conditions of 400 to 500 degrees.
  • P-type doping is achieved by passing through TMGa, NH3, Cp2M, and the doping concentration is 1E20/cm3.
  • the growth pressure can be controlled to 200-400 mBar, V/III can be controlled at 6000-10000, and the growth rate can be controlled at 0.5-8 um/h (micron). /hour)
  • the growth of the Micro blue LED can be completed by the above steps S341-S345.
  • the substrate on which the LED is grown is taken out from the MOCVD apparatus, and HF (hydrofluoric acid) is used to etch away the mask and some impurities (amorphous deposition) formed on the mask during the growth of the LED, and grow Since the LED can withstand HF corrosion, it is not corroded, so that the manufacture of the blue LED can be completed.
  • HF hydrofluoric acid
  • the step S322 is adjusted when the green LED is manufactured to expose an area on the mask where the green LED needs to be fabricated, and the position of the area of the green LED can be set according to a predetermined layout, for example, see FIG. 9, in FIG. At the view angle shown, it can be located to the right of the blue LED with a spacing of 20um.
  • the In composition is changed to a medium concentration (20% to 30%) so that green color can be displayed.
  • the mask when performing the step of manufacturing a mask in S33, the mask may be covered on the entire surface, including the already grown blue LED.
  • the step S322 is adjusted when the green LED is manufactured to expose an area on the mask where the red LED needs to be manufactured, and the position of the area of the red LED can be set according to a predetermined determination. For example, see FIG. 9 , and FIG. 9 At the view angle, it can be located to the right of the green LED and the spacing is set to 20um. Meanwhile, in the step S343, the In composition is changed to a high concentration (30% to 40%) so that red color can be displayed.
  • the mask when performing the step of manufacturing a mask in S33, the mask may be covered on the entire surface, including the already grown blue and green LEDs.
  • the present embodiment provides another manufacturing method.
  • the method in this embodiment is similar to that in the fourth embodiment.
  • the manufacturing mask is opposite to the order of growing the LEDs, that is, in the fourth embodiment, First, a mask having an exposed area is fabricated, and then a color LED is grown in the exposed area, and then the mask is etched away; in the embodiment, the LED is long, then the mask is fabricated, and the LED area is retained by photolithography ( Including the LED and the mask above the LED), etching the mask of other areas, etching the LEDs of other areas, and then regenerating another color LED. After the growth, the remaining mask can be etched first. Drop, and then apply a new mask, repeat the process after the last lithography start, to complete the growth of three color LEDs.
  • a specific example can include the following steps:
  • a Ti buffer layer is prepared on a 5.5 inch (inch) glass substrate, and the buffer layer is prepared by sputtering, and has a thickness of 200 nm.
  • a blue LED (also referred to as "epitaxial growth”) is first grown on the buffer layer, and a single crystal LED film structure can be formed in the exposed region, and an amorphous deposition is formed above the position where the mask exists.
  • a GaN buffer layer is grown at 350 to 400 degrees, and the thickness is 15 nm; then an N-doped GaN layer is grown at a temperature of 450 to 500 degrees, and the thickness is 2 um, and N is formed by introducing SiH4 during the growth process.
  • Type doping doping concentration 1E19/cm3; then grow a 400-500 degree growth of blue LED multi-quantum well (multi-quantum well structure is InGaN/GaN, cycle number 10, InGaN thickness 3nm, GaN thickness 7nm, by controlling TMIn Flow mode is used to make low In composition InGaN, In composition 10-20% to achieve blue light emission); then 400 to 500 degrees to grow AlGaN electron blocking layer, thickness 80nm; last 400 to 500 degrees growth P-doped GaN, thickness 100nm P-type doping is achieved by introducing Cp2Mg during the growth process, and the doping concentration is 1E20/cm3.
  • a mask is prepared on the epitaxial layer of the blue LED, and the mask is a SiO2 film having a thickness of 500 nm and is prepared by PECVD.
  • the first color may also be red or green, in which case the subsequent second and third colors may suitably become other colors that are different from the other colors.
  • the final product needs to retain 2.1 million blue LED areas, each of which is 12*28um in size. These 2.1 million reserved areas are arranged in a row and order on the glass substrate, evenly arranged over 5.5 inches (inch). ) on the substrate. The area where the mask is not retained is removed by inductively coupled plasma (ICP) etching to remove the epitaxial layer (ie, the grown blue LED is removed).
  • ICP inductively coupled plasma
  • the green LED is epitaxially grown in a growthable region, and the specific method is similar to step S42, except that the In composition in the TMIn flow control multiple quantum well is changed to a medium concentration (20 to 30%).
  • the first mask Since the first mask is left, it is necessary to etch away the first mask, that is, to etch away all of the remaining first mask. For example, after the second color LED is grown, the glass substrate is taken out of the apparatus, and the remaining first mask (ie, the mask manufactured in the step S43) is removed by HF etching.
  • the mask is over the blue LED and the green LED, and the mask is a SiO2 film having a thickness of 500 nm and is prepared by PECVD.
  • lithography is used on the second mask to preserve the areas of the blue LED and the green LED; each retains 2.1 million areas, each area is 12*28 um, and 2.1 million newly reserved green LED areas are on the glass substrate.
  • the upper row is arranged in the order of the rows and columns, and is vertically below the blue LED with a pitch of 20 ⁇ m; the region where the mask is not left is removed by the ICP etching method (ie, the newly grown green LED).
  • a red LED is epitaxially grown in a growth region, and the specific method is similar to step S42 except that the In composition in the TMIn flow control multiple quantum well is changed to a high concentration (30 inch 40%).
  • the glass substrate is taken out from the growth apparatus, and all of the remaining masks (manufactured in step S47) are removed by HF etching.
  • a mask is formed on the blue LED, the green LED, and the red LED, and the mask is a SiO2 film having a thickness of 500 nm and is prepared by PECVD.
  • lithography is used on the third mask to preserve the areas of the blue, green, and red LEDs; each retains 2.1 million areas, each of which is 12*28um in size, and 2.1 million of the newly reserved red LED areas are
  • the glass substrate is regularly arranged in the order of the rows and columns, and is located on the right side of the blue LED in the horizontal direction with a pitch of 20 ⁇ m.
  • the area where the mask is not left is removed by ICP etching (ie, this newly grown red LED).
  • all of the third mask is removed, for example, all remaining third masks are removed using HF etching.
  • this embodiment provides another manufacturing method.
  • each time the LED is grown it is necessary to manufacture a mask.
  • These processes require human participation, and therefore, the degree of automation is low, which is disadvantageous for rapid batch production.
  • the method provides a method for realizing a mask by using a mask plate bound by a device, thereby completing LED growth more quickly.
  • the step of manufacturing a mask by S321 and the step of exposing the LED region by photolithography are not required.
  • the steps S321 and S322 can be quickly completed by providing a mask on the buffer layer and passing through the mask.
  • the mask is a "mask" function.
  • the mask functions to protect the areas where the LEDs are not required to be grown, that is, the LEDs are not allowed to grow in these areas, and therefore, the mask The same is true of the role.
  • the mask can use a thin piece of metal, for example, stainless steel or aluminum, and the thickness can be 20 um.
  • a large number of holes are arranged on the mask, and the layout of the holes is consistent with the layout of the areas in which the LEDs are required to be fabricated in the first method, that is, the layout of the holes is the layout of the LED to be grown, and subsequently, when the LED is grown, These holes allow chemicals to enter, completing the LED growth.
  • the size of the mask needs to be greater than or equal to the size of the LED display to be manufactured, for example, 5.5 inches or 5.2 inches or more.
  • the size of the mask can be made larger than the size of the LED display to be manufactured, and the excess can be used for fixing or more protection.
  • the shape of the mask is not limited as long as the above conditions can be satisfied in size.
  • the mask can be attached to the buffer layer during use, or it can be left with a slight gap between the buffer layer.
  • the specific size of the gap is not limited, as long as the LED display that meets the manufacturer's custom specifications can be grown. can.
  • the mask can be placed on the buffer layer by mechanical means in a specific device (adhering to the buffer layer or leaving some small spacing between each other).
  • some mechanical structure such as a clip
  • some mechanical structure for fixing can be used to hold the mask (such as by clamping the periphery of the mask) to secure it above the buffer layer.
  • a new LED can be grown by moving the position of the mask.
  • the mechanical structure can be controlled to shift the mask a certain distance (note that sometimes Direct translation may cut off the growing LED. In this case, you can raise some distance first. In this way, the area on the new buffer layer can be exposed through the hole on the mask, so that you can pass The various chemicals mentioned in Example 4 were introduced into the holes to grow other color LEDs.
  • three masks can also be provided.
  • the shape and size of the holes in the three masks are not limited, so that more LED layout requirements can be satisfied.
  • the three masks can be selectively replaced by “plugging and replacing”. For example, the first mask is inserted into the device to complete the growth of a color LED, and then the mask is used. The board is pulled out, another mask is replaced to complete the growth of another color LED, and the mask is pulled out, and the last mask is replaced to complete the growth of the last color LED.
  • FIG. 10 it is a schematic structural view of a device for selecting one of the mask plates in a manner similar to the multi-CD change, the angle of the schematic view being a plan view angle of the substrate 17.
  • the device includes a plurality of masks (11, 12, 13), the layout of the holes (not shown) on each mask matching the layout of the various colors to be formed, each mask
  • the plate can be fixed by means of a fixing member (14), wherein one or more fixing members can be connected to a rotating device 15 via the connecting member 16.
  • the rotating device can be controlled to be turned to a certain angle, and then the mask 11 is operated.
  • the mask 11 When the mask 11 is finished, the mask 12 can be rotated to the area where the mask 11 is located. A new hole is exposed to allow another color LED to be grown, and then another color LED is grown by controlling the position of the mask 13 to rotate to the previous mask 12.
  • the present embodiment provides another method of growing LEDs.
  • the apparatus 60 for growing LEDs of the present embodiment includes a first reaction chamber 63, a second reaction chamber 65, and a third reaction chamber 67, which are respectively used to complete the growth of LEDs of different colors, that is, The steps of S323-S327 in the fourth embodiment are completed.
  • a mask is also used in this embodiment instead of the mask in the fourth embodiment.
  • the configuration of the mask can be referred to the description in the fifth embodiment, and details are not described herein.
  • a mask is placed in each reaction chamber for growing a color.
  • a first transmission chamber 64 is included between the first reaction chamber 63 and the second reaction chamber 65, and a second transmission chamber 66 is included between the second reaction chamber 65 and the third reaction chamber 67.
  • the transmission chamber (64, 66) is used for The components of the reaction chamber in which the LEDs have been grown are moved integrally into another reaction chamber to achieve growth of another color LED.
  • Apparatus 60 may also include a first load-lock chamber 62, a second load lock chamber 68, an inlet glove box 61, and an outlet glove box 69.
  • the first load lock chamber 62 is used for storing the raw material of the LED to be grown (for example, the buffer layer substrate processed by the step S31 in the fourth embodiment), and the second load lock chamber is used for storing three kinds of growth.
  • the material behind the color LED There may also be some means, such as a robot, in the first load lock chamber to deliver the raw material to the first reaction chamber.
  • the second load lock chamber is used to take the raw material from which the LED is grown from the third reaction chamber and send it to the exit glove box.
  • the purpose of the glove box is to improve cleanliness.
  • the glove box is a sealed box.
  • the user places the contents of the box through the gloves (usually rubber gloves) provided in the box, for example, adjusting the position of the raw materials.
  • the setting and operation of the glove box are all prior art, and the specific implementation is not described here.
  • the glove box is operated at atmospheric pressure, and the reaction chamber is usually low pressure, so if the glove box is directly connected to the reaction chamber, the rubber glove in the glove box will be exploded.
  • loading the interlocking chamber requires partitioning the glove chamber and the reaction chamber, and does not allow the glove box to directly communicate with the reaction chamber.
  • a first valve 611 and a second valve are respectively disposed between the first loading and interlocking chamber and the inlet glove box and the first reaction chamber. 612, can prevent gas circulation.
  • the pressure of the first load lock chamber is first adjusted to atmospheric pressure, and then the first valve 611 is opened, so that various operations can be performed through the entrance glove box.
  • the first valve 611 is closed, and the pressure in the first load lock chamber is adjusted to be the same as the pressure in the first reaction chamber, and then the second valve 612 is opened to send the raw material to the first reaction chamber.
  • the reaction is then closed to close the second valve 612.
  • the operation of the third reaction chamber, the second loading and interlocking chamber, and the outlet glove box are similar, and the third valve 613 and the fourth valve 614 are required to avoid direct communication between the third reaction chamber and the outlet glove box.
  • a valve is also disposed between each reaction chamber and the transmission chamber.
  • a fifth valve 615 and a sixth valve 616 are respectively disposed between the first transmission chamber and the first reaction chamber and the second reaction chamber, and the second transmission is respectively disposed.
  • a seventh valve 617 and an eighth valve 618 are disposed between the chamber and the second reaction chamber and the third reaction chamber, respectively.
  • the transmission chamber is also used to isolate different reaction chambers (the pressures in different reaction chambers are also different and cannot be directly turned on). When it is necessary to transfer things between the two reaction chambers, it is also required. Control the air pressure in the transmission chamber and control the valve switch and close to avoid direct communication between the two reaction chambers.
  • the working principle is similar to that of the aforementioned load lock chamber. For example, it will be required to transfer between the first reaction chamber and the second reaction chamber.
  • first close the valves on both sides of the first transmission chamber usually in the closed state to prevent the first reaction chamber from communicating with the second reaction chamber
  • opening the fifth valve 615 then transferring the contents of the first reaction chamber to the first transmission chamber, then closing the fifth valve 615, and then adjusting the pressure of the first transmission chamber to be the same as the pressure in the second reaction chamber, and then opening the first Six valve 616, then transferring the contents of the first transmission chamber into the second reaction chamber, and then closing the sixth valve 616.
  • one raw material refers to a substrate with a buffer layer which has been subjected to the step S31 in the fourth embodiment.
  • the first load lock chamber loads the one or more raw materials.
  • the raw material can be loaded into the first load lock chamber by a built-in robot, and one or more raw materials can be stored in the first load lock chamber.
  • the first loading and interlocking chamber sends the raw material to the first reaction chamber.
  • the raw material can be fed into the first reaction chamber by a control robot.
  • the first reaction chamber uses a mask to grow a blue LED.
  • the layout of the holes in the mask 711 in the first reaction chamber is identical to the layout of the blue LED to be grown.
  • a plurality of holes 731 on the mask 711 are in the raw material 721.
  • a blue LED (indicated by B in the figure) can be grown on the area projected on the material 721 through a hole in the mask.
  • the steps S323-S327 in the fourth embodiment refer to the steps S323-S327 in the fourth embodiment.
  • the raw material for growing the blue LED is sent to the second reaction chamber through the first transmission chamber to grow the green LED.
  • the layout of the holes in the mask 712 in the second reaction chamber coincides with the layout of the green LED to be grown.
  • a plurality of holes 732 on the mask 712 are grown in blue.
  • the vertical projection on the raw material 722 of the color LED grows a green LED (indicated by G in the figure) through a hole in the mask to be projected on the material 722.
  • the steps S323-S327 in the fourth embodiment refer to the steps S323-S327 in the fourth embodiment.
  • the raw material of the blue and green LEDs is sent to the third reaction chamber through the second transmission chamber to grow the green LED.
  • the layout of the holes in the mask 713 in the third reaction chamber is identical to the layout of the red LED to be grown.
  • a plurality of holes 733 on the mask 713 are grown in blue.
  • a red LED (represented by R in the figure) is grown in a region projected on the material 723 through a hole in the mask.
  • the growth method can also refer to the steps S323-S327 in the fourth embodiment.
  • the second load-locking chamber takes out the raw material from which the three-color LED is grown from the third reaction chamber.
  • the second loading lock chamber takes out the raw material from which the three-color LED is grown from the third reaction chamber by a built-in robot.
  • the second load-locking type sends the raw material of the three-color LED to the exit glove box.
  • the raw material is sent to the exit glove box by a robot.
  • the present embodiment provides a method for manufacturing an LED display screen.
  • the solution provided in this embodiment is used to complete the manufacture of the final LED screen based on the method for growing LEDs provided by the above embodiments.
  • ways to complete the manufacture of the entire LED including:
  • a heterogeneous medium is fabricated on a substrate for manufacturing, such as glass.
  • a layer of flexible dielectric (as shown in Figure 5) can be fabricated on the substrate to serve as a heterogeneous medium for growing LEDs, or it can be fabricated on a substrate.
  • the flexible dielectric layer and the drive tube (as in Figure 3) use the drive tube as a heterogeneous dielectric layer to grow the LED.
  • Fabricating a flexible dielectric layer on a substrate, or fabricating a flexible dielectric layer and a drive tube on a substrate are prior art.
  • the buffer layer is manufactured by the method provided in the above embodiment, and after the LED is grown, the other layers are further manufactured.
  • the method of manufacturing the other layers is a prior art, and various other methods can be used to manufacture other layers.
  • the layer to the transparent electrode then cut it into the shape required for the real product (such as a 5.5-inch rectangular display), and then transfer the flexible dielectric layer and all the above components from the manufacturing substrate to A substrate for the product (which can also be glass) and continue to make the remaining parts (such as the bonding layer and the cover) to complete the growth of the entire product.
  • a substrate for the product which can also be glass
  • the remaining parts such as the bonding layer and the cover
  • Cutting is first performed at the manufacturing stage, that is, after the heterogeneous medium is grown on the substrate for fabrication, the heterogeneous medium is cut to the target shape, and then the buffer layer is fabricated and the LED is grown.
  • the other components are regrown, and then all the components above the flexible dielectric layer are transferred from the substrate for manufacturing to a substrate for the product.
  • this step can be transferred to the substrate for the new product after the LED is grown, and then the remaining components can be fabricated.
  • the first is still to make a heterogeneous medium on a substrate, the heterogeneous medium comprising a flexible medium layer.
  • the flexible dielectric layer and all of the above components are transferred to the substrate for the product.
  • the remaining components i.e., the layers above the LEDs
  • the micro LED can be finished, and then the protective layer is fabricated, and then the driving tube and the height compensation layer are fabricated.
  • the present embodiment discloses an LED (Light Emitting Diode) fabricated by the solution provided by the various embodiments described above.
  • FIG. 14 is a top view of the display screen.
  • the display screen includes a plurality of LEDs (141, 142, ... 14n) fabricated by the solutions provided by the various embodiments described above.
  • the display screen further includes a drive circuit 142 for driving the respective LEDs.
  • the broken line frame in the figure is only used to indicate the driving circuit, and does not represent the shape and size of the actual driving circuit. The design of the actual driving circuit is a technique well known to those skilled in the art and will not be described here.
  • the display can be used as a display for various electronic devices, for example, as a display for electronic devices such as mobile phones and tablet computers.
  • the connection and control mode of the driving circuit 142 and each LED are prior art, and are not described in this embodiment.
  • the embodiment discloses an electronic device (for example, a smart phone, a smart wearable device, a tablet computer, etc.), the electronic device includes a display screen 151, a processor 152, and a memory. 153.
  • the display screen adopts the display screen in Embodiment 9, and may include a driving circuit 1512 and a plurality of LEDs (1511, ... 151n) coupled to the driving circuit 1512 of the display screen 151.
  • the memory 153 is used to store instructions required for the processor to operate, the processor 152 is used to read and execute the instructions stored in the memory 153, and the display screen 151 is displayed by the drive circuit.

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Abstract

一种制造GaN基显示屏的方法，在350～500度下生长GaN层，气压五到七百mBar，V/III为两千到五千，生长速率为3～15nm/分，在450～500度下生长N型GaN层，气压两百到四百mBar，V/III为六千到一万，生长速率0.5～8um/h；在四百到五百度下生长多量子阱层，气压200～400mBar，V/III为一万二到三万，生长速率0.5～3um/h；在四百到五百度条件下生长AlGaN层，气压为50～300mBar，V/III为两千到五千，生长速率0.5～2um/h；在四百到五百度下生长P型GaN层，气压两百到四百mBar，V/III为六千到一万，生长速率为0.5～8um/h。

Description

LED制造方法及LED、显示屏和电子设备
本申请要求于2017年6月30日提交中国专利局、申请号为201710527677.4、发明名称为“LED制造方法及LED”的中国专利申请的优先权以及要求于2017年11月8日提交中国专利局、申请号为201711090555.X、发明名称为“LED制造方法及LED、显示屏和电子设备”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及显示屏领域，尤其涉及LED制造方法及LED、显示屏和电子设备
背景技术
Micro LED(Micro Light Emitting Diode，微发光二极管)技术是最近刚出现的一种显示屏技术。Micro LED是一种微小化的LED，其尺寸在100um以下甚至更小。与当前使用广泛的TFT LCD(Thin Film Transistor Liquid Crystal Display，薄膜晶体管液晶显示屏)以及AMOLED(Active Matrix Organic Light Emitting Diode，主动矩阵有机发光二极体)相比，Micro LED在光学效率、亮度、最大解析度、响应速度、寿命等方面都有自己的优势。
目前业界生产Micro LED的方案主要包括以下几个步骤：
1)为采用常规LED技术生产外延片；
2)之后使用高精度光刻技术和小切割道切割技术制备小尺寸的LED芯片(通常会比产品用的尺寸小)；
3)之后通过批量转移(比如印刷或者贴装)的方式将多个Micro LED制备的小尺寸的LED芯片，批量转移组合成阵列，形成大尺寸的显示屏幕。
现有技术面临的一个重大的问题就是批量转移的良率，以分辨率为1080P的手机屏为例，需要RGB(红绿蓝)像素点共计约630万颗，即需要转移的小尺寸的LED芯片达到千级别以上，即便芯片转移良率在99.99％以上，依然会因为部分故障缺陷的小尺寸的LED芯片导致整个屏幕出现坏点缺陷(比如亮点或者黑点)，无法满足批量生产和使用的要求。
发明内容
为解决现有技术中存在着的批量生长困难、难以满足批量生产使用的要求的问题，第一方面，本发明实施例提供了一种用于制造氮化镓基二极管(LED)显示屏的方法，该氮化镓基二极管LED显示屏包括多种颜色LED，每种颜色LED从下到上包括：氮化镓(GaN)层、N型掺杂GaN层、多量子阱层、AlGaN层以及P型掺杂GaN层，其中，制造LED显示屏的方法包括：
在异质介质上制造缓冲层，其中，异质介绍是指材料跟LED材料不一致的介质；
在缓冲层上依次生长多种颜色LED，其中，生长每种颜色LED包括：
在350～500摄氏度温度条件下生长GaN层，其中，生长过程中的气压为500～700mBar，V/III为2000～5000，生长速率为3～15nm/min(纳米/分钟)，其中，V/III是指5族元素N与3族元素Ga的摩尔比，生长速率是指一定时间内生成物质的厚度的增加量；
在450～500摄氏度温度条件下在GaN层上生长N型掺杂GaN层，其中，生长过程中的气压在200～400mBar，V/III在6000～10000，生长速率在0.5～8um/h(微米/小时)；
在400～500摄氏度温度条件下在N型掺杂GaN层上生长多量子阱层，其中，生长过程中的气压为200～400mBar，V/III为12000～30000，生长速率为0.5～3um/h；
在400～500度条件下在多量子阱层上生长AlGaN层，其中，生长过程中的气压为50～300mBar，V/III为2000～5000，生长速率为0.5～2um/h；
在400～500度条件下在AlGaN层上生长P型掺杂GaN层，其中，生长过程中的气压为200～400mBar，V/III为6000～10000，生长速率为0.5～8um/h。
其中，氮化镓基LED是指含有CaN基的各种化学物质，例如，GaN、AlGaN、P/N掺杂GaN等都含有CaN基。
本实施例提供的方法通过一些条件来让LED在特定温度下生长，这样，可以在更多的一些异质介质(如PI等柔性介质)中生长，进而可以更加方便地进行LED转移(如把PI及以上所有东西整体转移)，不需要像现有技术一样进行切割、组装等，从而可以满足批量生产和使用的要求。
基于第一方面，在第一方面第一种可能的实现方式中，在生长各层时，待生长LED的区域与不需要生长LED的区域通过一个带有多个洞的隔离板隔离，其中，带洞掩膜层中的多个洞的布局与需要生长的LED的布局相同，多个洞用于让生长各层所需的化学物质通过，从而形成LED的各层。
通过隔离板进行隔离，能够不需要使用传统的掩膜方案，减少工序，提升效率。
基于第一方面第一种可能实现方式，在第一方面第二种可能的实现方式中，每一个颜色LED生长都在与之对应的一个生长设备中进行，每个生产设备中均包括一个隔离板。隔离板起的作用类似于掩膜，本申请中也将其称为“掩膜板”。
每个生长设备均包括一个隔离板的方案实现简单，制造方便。
基于第一方面第一种可能实现方式，第一方面第三种可能的实现方式中,所有颜色LED生长都在一个生长设备中进行，生长设备可以通过插拔对应于不同颜色LED的隔离板来依次完成不同颜色LED的生长。
将多个隔离板在一个设备中集成度高，可以节省空间。
基于第一方面第一到第三种任意一种实现方式，在第一方面第四种可能的实现方式中，所述隔离板材料为不锈钢。此外，也可以是例如铝等金属。这些材料能够起到隔离的作用而不会影响生长制造。
基于第一方面，在第一方面第五种可能的实现方式中，在生长各层时，待生长LED的区域与不需要生长LED的区域通过暴露有多个洞的带洞掩膜层隔离，其中，带洞掩膜层中的多个洞的布局与需要生长的LED的布局相同，多个洞用于让生长各层所需的化学物质通过，从而形成LED的各层。
基于第一方面第六种可能的实现方式，在第一方面第六种可能的实现方式中，在生长GaN层之前，在缓冲层上制造一层没有洞的无洞掩膜层，再通过光刻法暴露出多个洞后形成带洞掩膜层。
以上第五、六种可能的实现方式使用掩膜法来分离需要制造LED的区域及不需要制造LED的区域，工艺成熟简单。
无洞掩膜层采用采用等离子增强化学气相淀积(plasma-enhanced chemical vapor deposition，PECVD)方法来制造。
本申请中，异质介质为包括柔性介质层，柔性介质层的材料为聚酰亚胺(PI)，或者聚甲基丙烯酸甲脂(PMMA)，或者聚碳酸脂(PC)。
LED在柔性介质层上生长(LED可以直接在柔性介质层上生长，或者在柔性介质层上生长的一层其他的东西，如驱动管，上生长)后，后续可以将柔性介质层及以上的所有东西整体转移到一个新的基板，这样，无需像现有技术一样切割成多个小的部分然后再拼接成目标尺寸的LED，从而提升了转移良率，更加适用于批量生长。
本申请中，缓冲层的材料为钛(Ti)或者，为石墨稀，或者碳纳米管。
第二方面，本申请还包括一种由第一方面及第一方面各种实现方式生产的LED(发光二极管)。
第三方面，本申请还公开了一种显示屏，包括驱动电路，多个如第二方面公开的发光二极管，驱动电路用于驱动多个发光二极管发光。
第四方面，本申请还公开了一种电子设备，，包括处理器、存储器以及如第三方面公开的显示屏，存储器用于存储处理器运行时所需的指令，处理器用于读取并执行存储器存储的指令，并通过驱动电路来让显示屏显示。
第五方面，本申请公开一种氮化镓基二极管(LED)显示屏制造方法，包括：
S41、在异质介质上制造缓冲层；在所述缓冲层上生长第一颜色LED；在所述第一颜色LED上制造第一掩膜；在所述第一掩膜上使用光刻保留产品中需要的所述第一颜色LED的区域，将其他区域的所述第一掩膜腐蚀暴露，并去掉未保留所述第一掩膜的区域的LED；生长第二颜色LED；腐蚀掉所述第一掩膜；制造第二掩膜；在所述第二掩膜上使用光刻保留产品中需要的所述第一颜色LED以及所述第二颜色LED的区域，将其他区域的所述第二掩膜腐蚀暴露，并去掉未保留所述第二掩膜的区域的LED；生长第三颜色LED；腐蚀掉所述第二掩膜；制造第三掩膜；在所述第三掩膜上使用光刻保留产品中需要的所述第一颜色LED、所述第二颜色LED以及所述第三颜色的区域，将其他区域的所述第三掩膜腐蚀暴露，并去掉未保留所述第三掩膜的区域的LED；腐蚀掉所述第三掩膜。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为实施例一提供的一种LED显示屏中各个像素及子像素布局示意图；
图2为实施例一提供的另一种LED显示屏中各个像素及子像素布局示意图；
图3为实施例一提供的一种包括Micro LED的显示屏截面示意图；
图4为实施例一提供的一种Micro LED的截面示意图；
图5为实施例二提供的一种包括Micro LED的显示屏截面示意图；
图6为实施例三提供的一种包括Micro LED的显示屏截面示意图；
图7为实施例四提供的一种制造LED显示屏的方法流程图；
图8为实施例四提供的一种生长LED的方法流程图；
图9为实施例四提供的一种掩膜形状示意图；
图10为实施例五提供的一种掩膜设备结构示意图；
图11为实施例六提供的一种生长设备示意图；
图12为实施例六提供的一种生长设备中掩膜布局示意图；
图13为实施例六提供的利用生长设备进行生长的流程图；
图14为实施例九提供的一种显示屏结构示意图；
图15为实施例十提供的一种电子设备结构示意图。
具体实施方式
下面结合各附图，对本发明的各个实施例进行描述。
实施例一
参见图1及图2，为本实施例一种LED显示屏俯视图，与现有技术的显示屏类似，从整体上看，LED显示屏也是一块平整的面板或者是一块边缘弯曲的曲面屏面板。该显示屏包括多个像素10，每个像素包括多个子像素(图中用标号11、12、13表示)，子像素包括用于发光的LED，通常包括红(图中用R表示)、绿(图中用G表示)、蓝(图中有B表示)三种颜色，各个子像素配合着发光能够产生更多种颜色。
需要说明的是，上述实施例中的LED结构示意图适用于普通LED以及Micro LED的结构示意图，以下实施例提供的图形以Micro LED为例进行介绍，对于普通LED，其表现在尺寸要大一些，其他结构与Micro LED类似，因此，本申请不再对普通LED结构进行详细描述。
参见图1、图2，显示屏中的各个子像素形状、大小、相互之间的排列顺序、间距等具体设置方法并不限定。例如，在图1中，各个子像素的形状是矩形，各个子像素按R、G、B顺序并排地排在一起；而在图2中，各个子像素的形状是圆形，相互之间以三角形的形式排列在一起。以上只是几个示例，在其他实施例中，子像素的形状也可以是椭圆形，或者其他各种形状。两个像素之间的间隔也不限定，例如，可以与子像素之间的间隔一样，或者也可以是子像素大小(如圆形时的直径、矩形时的一条边的长度)的几倍到几十倍的距离。
需要说明的是，虽然各个子像素形状、大小、相互之间的间距并不限定，但也并不意味着可以是任意设置，本领域技术人员可以理解，无论是形状，还是大小、间距或者其他参数，都是在能够达到产品显示所需的指标下，可以选择的一些参数，这些参数的具体实现为现有技术(例如，可以通过仿真、经验值、测试等手段得到)，这里并不赘 述。同时，图1及图2中的各个像素或者子像素的形状、大小、间隔的设置等也仅仅是作为示例，并不代表实际产品中也是如此设置。
Micro LED显示屏中的各个子像素的具体实现结构可以有多种，下面分别通过几个实施例对其中几种结构进行介绍。
参见图3，为第一种包含了Micro LED的显示屏中的一个子像素的截面图，自上而上按出光方向包括：基板、柔性介质层、驱动管、缓冲层、Micro LED、透明电极、粘接层以及盖板，其中：
基板用于起到基本的支撑的作用，例如，用于支撑住柔性介质层，使PI柔性介质中在显示屏制作过程中不产生形变。基板材料并不限定，只要硬件能够满足产品生长即可，例如，可以选用玻璃作为基板材料，厚度可以在1mm左右。
柔性介质层位于基板上方，一方面用于在里面实现一些电路(即将用于实现电路的材料，如铜箔，做到柔性介质层当中)，例如，用于提供连接电源(图中未示出)与驱动管的电路。另一方面，柔性介质层也用于承载在其之上的其他层，在生产制造过程中，有时候需要将柔性介质层以及柔性介质层以上的部分整体转移到另一个介质(例如，另一块玻璃基板)，此时，柔性介质层就起到了承载的作用。柔性介质层厚度可以在100mm左右，并且，由于是柔性介质，因此，还可以弯曲以用来制造曲面屏。柔性介质具体材料并不限定，通常可以使用PI(Polyimide，聚酰亚胺)或者聚甲基丙烯酸甲脂(PMMA)、聚碳酸脂(PC)等材料。
需要说明的是，柔性介质层是一个可选的层，如果不需要制造曲面屏，或者不需要转移柔性介质层及以上各层东西，那么也可以不设置柔性介质层。此时，柔性介质层中的电路也可以做到基板上(例如，基板是玻璃时，可以在玻璃中实现柔性介质层中的电路)，具体实现为现有技术，这里并不赘述。
驱动管位于在柔性介质层的上方，用于对每颗Micro LED进行驱动，驱动管在制造完成后，在整体上也是一个薄板状的“层”(即上下面都是平面)。驱动管类型可以是TFT(Thin Film Transistor，薄膜晶体管)驱动管或者CMOS(Complementary Metal-Oxide-Semiconductor，互补式金属氧化物半导体)驱动管，厚度可以是几十微米，例如，20-30mm。驱动管与透明电极配合给Micro LED供电，即驱动管与透明电极通过接电源两端来给Micro LED供电。驱动管材料可以是多晶硅。
缓冲层材料位于驱动管上，如果每种材料的晶格常数有差异则会存在晶格失配的问题，从而在材料之间产生大量的晶格缺陷(晶格lattice defect)，导致Micro LED质量不稳定。为了生长更高质量的Micro LED，可以在TFT驱动管与Micro LED之间加入缓冲层，起到缓解材料之间晶格失配的作用。同时，缓冲层也起到导电的作用(即让驱动管与Micro LED之间电导通)。缓冲层的材料通常采用Ti(钛)，或者也可以采用石墨稀材料、碳纳米管等材料，厚度可以比较薄，例如，0.5mm。
Micro LED，用于发光，例如，通常用于发出红、绿、蓝中的其中一种。Micro LED的厚度一般在几微米，例如，可以是5mm。
参见图4，为一种Micro LED结构截面示意图，呈现“层”级的结构，从上到下依次包括P型掺杂GaN(氮化镓)层、AlGaN(铝镓氮)层、多量子阱层、N型掺杂(或者也称“N掺杂”，或者“N型”)GaN层以及GaN buffer(氮化镓缓冲)层，每一层均由“层” 名字前面化学物质构成，例如，P型掺杂GaN层由P型掺杂GaN构成，多量子阱层由多个量子化阱构成。
其中，GaN buffer的材料就是GaN，用于缓解晶格适配，让Micro LED的缺陷密度(如位错dislocation密度更低)，达到更好的质量。GaN buffer的厚度例如可以为15nm。
P型掺杂GaN以及N型掺杂GaN用于形成PN结，N型掺杂GaN的厚度例如可以为2um，P型掺杂GaN的厚度例如可以为100nm，P/N型掺杂GaN两端分别连接电源正负极，具体连接时，P型掺杂GaN可以通过透明电极来与正极相连，N型掺杂GaN可以通过驱动管以及柔性介质层里的电路与负极相连。
多量子阱用于实现发光，如图4所示，多量子阱由GaN以及InGaN依次叠加后形成(最上端以及最下端都是GaN)，其中，每个量子阱包括上下两个GaN以及位于两个GaN中间的InGaN(氮化铟镓)，且相邻的量子阱可以复用一个GaN，例如，图4中的量子阱1以及量子阱2复用了一个GaN。InGaN厚度例如可以为3nm，GaN厚度例如可以为7nm。
AlGaN层为电子阻挡层，由AlGaN构成，用于避免电子过流，提高发光效率。AlGaN层的厚度例如可以为80nm。
Micro LED上方为透明电极，厚度如1微米，用于与驱动管配合来给Micro LED供电。由于透明电极在出光方向，为了让光透过，需要使用透明的材料，例如可以使用ITO(氧化铟锡)或者ZnO(氧化锌)等材料。
透明电极上方是粘接层，用于粘接最上方的盖板以及透明电极，由于粘接层也是在出光方向，因此，也需要使用透明材料。通常粘接层可使用透明高分子材料，例如硅胶，厚度在几微米左右，例如，可以设置为5mm左右。
盖板位于最上层，起到保护以及透光的作用，通常使用玻璃，厚度约几百微米，例如，500微米。
此外，由于Micro LED朝上以及朝下都会发光，为了让光线更加汇聚，可以在与出光方向相反的位置设置反光镜，从而让光线反射到出光方向。在本实施例中，出光方向朝上，因此，可以在柔性介质层或者基板下面设置反光镜(反光面朝上)，让光线往出光方向反射。
本实施例结构都在垂直方向实现，实现比较简单，并且由于不需要水平方向(侧边)放置部件，可以充分利用水平方向的空间(如放置传感器等器件)，空间利用率、集成度高。并且，每个子像素点也能做得比较小(不需要侧边的空间)，从而在同样的大小的空间内能放置更多的像素，可以做到更大的分辨率。此外，Micro LED在出光方向上经过的材料都是透明的材料，透光率高，显示效率更好。
实施例二
基于实施例，本实施例提供了另一种包含了Micro LED的显示屏截面结构。参见图5，为第二种Micro LED的截面图，出光方向为向下。本实施例各层的构成与第一种方案大致相同，各层的具体实现都可以基于第一种方案进行设计，这里不再赘述。
下面重点对与第一种方案不同的地方进行详细说明，具体包括：
1)驱动管的位置
本实施例中，驱动管的位于Micro LED以及粘接层之间，而不是像第一种方案一样 位于缓冲层以及柔性介质层之间。
2)去除掉了透明电极
透明电极的原有的电路功能可以在柔性介质层中实现。即在本结构中，可以通过驱动管与柔性介质层中的电路来接电源的两极为Micro LED供电。
3)柔性介质层材料
由于柔性介质层位于出光方向，为了尽量不阻挡光线，柔性介质层可以选用透光性好的材料，例如，石墨烯。
4)基板
由于基板也在出光方向上，基板的材料也要选择透光性好的材料，例如，玻璃。同时，为了跟下面提到的另一基板进行区分，在图中用“第一基板”表示。
5)盖板
本结构中，由于出光方向是向下，也就是说实际产品中，对于用户看到的一块显示屏，基板是位于最上方的(出光方向朝向用户)，盖板是位于最下方的。此时，盖板主要起到的作用是支撑作用，与基板的作用类似，因此，在此实施例中，也可以将其也认为是“基板”(如图中所示第二基板)，材料与结构一中的类似，仍然可以选择硬度合适材料，如玻璃。
此外，本实施例，也可以设置反光镜，具体的，可以在驱动管与Micro LED之间设置反光镜(反光面朝下)，来将光线往出光方向反射。同时，由于驱动管与Micro LED需要导电，因此，反光镜的材料可以使用金属等能够导电的材料。
本实施例中，跟第一方案一样，也是在垂直方向实现，实现比较简单，具有空间利用率、集成度高，能做到更大分辨率的优点。同时，在制造时，通过柔性介质层(如PI材料)上设置一个缓冲层，并在缓冲层上生长Micro LED会更容易实现。
实施例三
基于以上各实施例，参见图6，本实施例提供了另一种包含Micro LED的显示屏的截面结构。本实施中的出光方向与第一种Micro LED相同，为向上方向。各个器件也可以参见前面两种实现方式，这里不再赘述。
下面重点对与第一种方案不同的地方进行详细说明，具体包括：
1)驱动管的位置
本实施例中，驱动管的位于柔性介质层以及透明电极之间，而不是像第一种方案一样位于缓冲层以及柔性介质层之间。同时，驱动管的位置在Micro LED以及缓冲层的侧边。
2)加入保护层以及高度补偿层
其中，保护层的作用在于防止驱动管与Micro LED之间出现不必要的电导通，以形成例如短路等问题，因此，需要用绝缘材料作为保护层的材料(例如，硅胶、二氧化硅)来将驱动管与Micro LED分开，
此外，由于驱动管制备后高度通常没有缓冲层加上Micro LED层高，为了让驱动管的高度与Micro LED高度一致以使整个结构更加稳定，还可以在驱动管与透明电极之间加入高度补偿层。同时，由于驱动管的电路与透明电极的电路连接需要连通，因此，需 要使用导电材料，例如，使用金、铝。
本实施例，也可以设置反光镜，具体的，也可以在柔性介质层或者基板下面设置反光镜(反光面朝上)，让光线往出光方向反射。
实施例四
基于上述各实施例，参见图7本实施例提供了一种LED制造方法，需要说明的是，本实施例及以下各实施例的中LED制造方法都适用于包括GaN基的普通LED以及Micro LED。本实施例提供的方法包括：
S31、在异质介质上制造缓冲层。
本实施例中的“异质介质”是指跟LED材料不一致的介质，LED的材料通常都是GaN基材料，因此，“异质介质”是指不同于GaN的介质。在基于前述几种LED结构中，异质介质可以是指基板(如玻璃)，或者指柔性介质层(如PI)。
缓冲层的作用是能更好地生长LED，具体原理以及缓冲层材料的选择已在前述实施例中进行过描述，这里不再赘述。
缓冲层的制造可以基于现有的工艺进行，例如，可以将一个玻璃基板放入到一个溅射台，通过溅射(英文为sputtering，即从溅射台顶部喷射缓冲层材料到基板上)的方法实现在基板上制造出缓冲层。此外，根据需要喷射的缓冲层材料的不同，针对一些金属材料还可以采用退火(annealing)等工艺技术来完成缓冲层的制造。
在一个示例中，缓冲层的厚度可以是200nm。
S32、在缓冲层上制造掩膜；
掩膜的材料可以是SiO2(二氧化硅)，厚度可以是500nm。具体的，可以采用PECVD(plasma-enhanced chemical vapor deposition，等离子增强化学气相淀积)方法来制造，即可以将制造有缓冲层的基板从溅射台拿出来后放到专用的PECVD设备来完成掩膜的制造，其具体实现为现有技术，这里并不赘述。
掩膜的作用是防止不需要生长LED的区域不生长LED，即在步骤S322中暴露出来的区域才生长LED，被掩膜覆盖的区域并不会生长LED，当然，在LED生长过程中也会在掩膜上形成一些物质，这些物质可以通过例如S328腐蚀步骤来进行去除。
S33、在掩膜上暴露出需要制造蓝色LED的区域。
本步骤中，可以使用光刻的方法来暴露出一种颜色(如蓝色)的LED的区域，光刻方法的具体实现为现有技术。需要说明的是，本实施例中，首先对蓝色LED进行制造，在其他实施例中，也可以先制造红色或者绿色LED，本申请并不限定。
参见图9，在一个示例中，选择矩形作为暴露区域的形状，同时，总共暴露出210万个区域，每个区域大小为12*28um(微米)，以阵列的形式整齐排列，阵列中行间距以及列间距都设置为15um。
在光刻完成后，即可在暴露出的区域生长LED，其中，这里的“生长”(grow)是LED制造领域的一个专用术语，其含义为在暴露区域通过一层层依次叠加的方式形成如图4所示的LED不同层的过程，例如，先形成GaN buffer，再形成N型掺杂GaN，依次类推，最后形成P型掺杂GaN。
下面的对LED的生长过程进行具体介绍，LED的生长过程可以在一个MOCVD (metalorganic chemical vapour deposition，有机金属化学气相沉积)设备中进行，该设备可以控制一些气体(或者汽化的液体)通入到设备当中进行化学反应，从而生长出LED。生长过程中，可以通过控制通入的化学物质的量以及通过检测已经生长的LED各层的厚度来决定何时停止或者继续生长，具体控制及检测方法为现有技术，这里并不赘述。下面将这个生长过程进行具体介绍。
S34、在掩膜上暴露出来的区域生长LED。
具体的，参见图8，可包括如下步骤：
S341、在350～500度条件下生长GaN buffer(氮化镓缓冲)。
GaN buffer即一层GaN，来作为缓冲层使用。具体的，可以将光刻后的带有缓冲层以及掩膜的基板放入到MOCVD设备中，并将温度控制在350～500度，然后通入TMGa(三甲基镓)以及NH3(氨气)来形成GaN buffer。需要说明的是，本申请中，如无特殊说明，本实施例及其他实施例中，“度”特指摄氏度。
为了能够更好地在350～500度生长GaN buffer，可以将生长压力控制在500～700mBar，将V/III控制在2000～5000，将生长速率控制在3～15nm/min(纳米/分钟)，其中，生长压力是指气压；V/III是指5族元素(N)与3族元素(Ga)的摩尔比；生长速率是指一定时间内生成的物质的厚度的增加量。
S342、在450～500度条件下生长N型掺杂GaN层。
本步骤中，通过通入TMGa、NH3以及SiH4(硅烷)来生成N型掺杂GaN，其中，硅烷是用于形成N型GaN的掺杂物质，掺杂浓度可以为1E19/cm3。
为了能够更好地在450～500度条件下生长GaN buffer，可以将生长压力控制在200～400mBar，将V/III控制在6000～10000，将生长速率控制在0.5～8um/h(微米/小时)。
S343、在400～500度条件下生长蓝色LED的多量子阱层。
本步骤中，通过通入TMGa，TMIn(三甲基铟)和NH3来生成多量子阱层。为了实现蓝色的光，需要控制TMIn流量来将In组分(content，即In和Ga的摩尔比)控制为10％～20％，在这种组分条件下，能够发出蓝色的光。
为了能够更好地在400～500度条件下生长多量子阱层，可以将生长压力控制在200～400mBar，将V/III控制在12000～30000，将生长速率控制在0.5～3um/h。
S344、在400～500度条件下生长AlGaN电子阻挡层。
本步骤中，通过通入TMGa，TMAl(三甲基铝)和NH3。来生成AlGaN电子阻挡层。
为了能够更好地在400～500度条件下生长AlGaN，可以将生长压力控制在50～300mBar，将V/III控制在2000～5000，将生长速率控制在0.5～2um/h(微米/小时)
S345、在400～500度条件下生长P掺杂(或者也称“P型掺杂”)GaN。
本步骤中，通过通入通TMGa，NH3，Cp2M的方式来实现P型掺杂，掺杂浓度1E20/cm3。
为了能够更好地在400～500度条件下生长P掺杂GaN，可以将生长压力控制在200～400mBar，将V/III控制在6000～10000，将生长速率控制在0.5～8um/h(微米/小时)
通过以上S341-S345步骤，即可完成Micro蓝色LED的生长。
S35、腐蚀掉掩膜及杂质。
将生长了LED的基板从MOCVD设备中取出，使用HF(氢氟酸)来将掩膜以及在生长LED过程中在掩膜上生成的一些杂质(非晶的沉积)腐蚀掉，而生长出来的LED由于可以耐 HF腐蚀，所以并不会被腐蚀掉，从而可以完成对蓝色LED的制造。
接下来可以重复上述相关的步骤来完成绿色以及红色LED的制造，具体可以通过执行下述方法来实现。
S36、重复S32-S35中的步骤来制造绿色LED，区别在于S33中需要暴露出制造绿色LED的区域，同时，在S343中改变In组分为中等浓度(20％～30％)。
具体的，S322步骤在制造绿色LED时调整为：在掩膜上暴露出需要制造绿色LED的区域，绿色LED的区域的位置可根据事先确定的布局进行设置，例如，参见图9，在图9所示的视图角度下，可位于蓝色LED的右方，间距设置为20um。同时，S325步骤中，将In组分改成中等浓度(20％～30％)，从而可以显示绿色。
此外，需要说明的是，在执行S33制造掩膜的步骤时，可以将掩膜覆盖全部表面，包括已经生长的蓝色LED。
S37、重复S32-S35中的步骤来制造红色LED，区别在于S33中需要暴露出制造红色LED的区域，同时，在S343中改变In组分为高等浓度(30～40％)。
具体的，S322步骤在制造绿色LED时调整为：在掩膜上暴露出需要制造红色LED的区域，红色LED的区域的位置可根据事先确定的进行设置，例如，参见图9，以图9所示的视图角度下，可位于绿色LED的右方，间距设置为20um。同时，S343步骤中，将In组分改成高浓度(30％～40％)，从而可以显示红色。
此外，需要说明的是，在执行S33制造掩膜的步骤时，可以将掩膜覆盖全部表面，包括已经生长的蓝色以及绿色LED。
实施例四A
基于实施例四，本实施例提供了另一种制造方法，本实施例中的方法跟实施例四中的类似，区别在于制造掩膜与生长LED的顺序相反，也即在实施例四中，先制造有暴露区域的掩膜，然后在暴露区域生长一种颜色LED，再腐蚀掉掩膜；而在本实施例中，先生长LED，然后再制造掩膜，再通过光刻保留LED区域(包括LED以及LED上方的掩膜)，再腐蚀掉其他区域的掩膜，再刻蚀掉其他区域的LED，然后再生长另一种颜色LED，生长完后可以先把原先剩下的掩膜腐蚀掉，然后再涂一层新的掩膜，重复上次光刻开始后的流程，从而完成三种颜色LED的生长。
一个具体的示例可以包括以下几个步骤：
S41、在异质介质上制造缓冲层
具体方法可参见步骤S31，例如，在5.5英寸(inch)的玻璃基板上制备Ti缓冲层，缓冲层采用溅射方式制备，厚度200nm。
S42、在缓冲层上生长第一颜色LED。
例如，先在缓冲层上生长蓝光LED(也称“外延生长”)，在暴露的区域可以形成单晶LED薄膜结构，掩膜存在的位置上方会形成非晶的沉积。具体的方法可参考前述实施例，例如先在350～400度生长GaN buffer层，厚度15nm；之后450～500度生长N掺杂GaN层，厚度2um，通过生长过程中通入SiH4的方式实现N型掺杂，掺杂浓度1E19/cm3；之后生长400～500度生长蓝色LED的多量子阱(多量子阱结构为InGaN/GaN，循环数10，InGaN厚度3nm，GaN厚度7nm，通过控制TMIn流量的方式制作低In组分InGaN，In组分10-20％实 现蓝色发光)；之后400～500度生长AlGaN电子阻挡层，厚度80nm；最后400～500度生长P掺杂GaN，厚度100nm，通过生长过程中通入Cp2Mg的方式实现P型掺杂，掺杂浓度1E20/cm3。
S43、在第一颜色LED上制造第一掩膜。
例如，在蓝光LED外延层上制备掩膜，掩膜为SiO2薄膜，厚度500nm，采用PECVD方式制备。当然，第一颜色也可以是红色或者绿色，在这种情况下，后续第二、三颜色可以相适合地变成其他的与其他颜色不同的颜色。
S44、在第一掩膜上使用光刻保留产品中需要的第一颜色LED的区域，将其他区域的掩膜腐蚀暴露，并去掉未保留掩膜的区域的LED。
例如，产品最终需要保留的是210万个蓝色LED区域，每个区域大小为12*28um，这些210万个保留的区域在玻璃基板上按照行列顺序规则排列，均匀排列在整个5.5英寸(inch)的基板上。未保留掩膜的区域使用感应耦合等离子(Inductive Coupled Plasma，ICP)技术刻蚀的方法去掉外延层(即去掉生长的蓝色LED)。
S45、生长第二颜色LED。
例如，在能生长的区域都进行外延生长绿光LED，具体方法与步骤S42相似，区别在于改变TMIn流量控制多量子阱中的In组分为中等浓度(20～30％)。
S46、腐蚀掉第一掩膜。
由于第一掩膜有剩下，因此，需要腐蚀掉第一掩膜，也即腐蚀掉剩下的全部的第一掩膜。例如，在生长完第二颜色LED后，从设备中取出玻璃基板，使用HF腐蚀的方式去掉剩下的第一掩膜(即S43步骤中制造的掩膜)。
S47、制造第二掩膜。
例如，即第二次制造掩膜，掩膜在蓝LED、绿LED的上方，掩膜为SiO2薄膜，厚度500nm，采用PECVD方式制备。
S48、在第二掩膜上使用光刻保留产品中需要的第一颜色LED以及第二颜色LED的区域，将其他区域的掩膜腐蚀暴露，并去掉未保留掩膜的区域的LED。
例如，在第二掩膜上使用光刻保留蓝色LED和绿色LED的区域；各保留出210万个区域，每个区域大小为12*28um，210万个新保留的绿色LED区域在玻璃基板上按照行列顺序规则排列，在垂直方向上位于蓝色LED的下方，间距20um；未保留掩膜的区域使用ICP刻蚀的方法去掉外延层(即本次新生长的绿LED)。
S49、生长第三颜色LED。
例如，在能生长的区域都外延生长红光LED，具体方法与步骤S42相似，区别在于改变TMIn流量控制多量子阱中的In组分为高浓度(30inch 40％)。
S410、腐蚀掉第二掩膜。
例如，从生长设备中取出玻璃基板，使用HF腐蚀的方式去掉第二次制造(步骤S47中制造)的剩下的全部的掩膜。
S411、制造第三掩膜。
即在蓝色LED、绿色LED以及红色LED上面制造掩膜，掩膜为SiO2薄膜，厚度500nm，采用PECVD方式制备。
S412、在第三掩膜上使用光刻保留产品中需要的第一颜色LED、第二颜色LED以及第三颜色的区域，将其他区域的掩膜腐蚀暴露，并去掉未保留掩膜的区域的LED。
例如，在第三掩膜上使用光刻保留蓝色LED、绿色LED和红色LED的区域；各保留210万个区域，每个区域大小为12*28um，210万个新保留的红色LED区域在玻璃基板上按照行列顺序规则排列，在水平方向上位于蓝色LED的右方，间距20um。未保留掩膜的区域使用ICP刻蚀的方法去掉外延层(即本次新生长的红色LED)。
S413、腐蚀掉第三掩膜。
即去掉全部的第三掩膜，例如，使用HF腐蚀的方式去掉剩下的全部第三掩膜。
需要说明的是，本实施例中的各个生长过程中的各种环境参数(例如温度)以及产品的参数(例如，各层的厚度、LED个数、区域大小等)仅仅只是一个示例，可以理解，这些参数也可以跟实施例四中一样。由于本实施例中的步骤跟实施例四相似，因此，可以参考下述各实施例中的制造方法及相关的制造设备来实现本实施例中的各个步骤。
实施例五
基于上述各实施例，本实施例提供了另一种制造方法。在实施例四中，每次生长LED前，都需要制造一次掩膜，这些工序都需要人的参与，因此，自动化程度较低，不利于快速批量地进行生产。为了解决这个问题，本方法提供了一种通过设备绑定的掩膜板来实现掩膜的方法，从而更加快速地完成LED的生长。
本实施例中，不需要执行S321制造掩膜的步骤以及S322通过光刻暴露出LED区域的步骤。相应的，可以通过在缓冲层上设置一个掩膜板，通过掩膜板来快速完成S321以及S322步骤。
顾名思议，掩膜板是起到“掩膜作用的板”，由上述方法一可知，掩膜的作用是保护不需要生长LED的区域，即不让这些区域生长LED，因此，掩膜板的作用也是如此。
具体的，掩膜板可以使用一块薄的金属片，例如，使用不锈钢、铝，厚度可以20um。同时，掩膜板上布置大量的洞，这些洞的布局与方法一中暴露出的需要制造LED的区域的布局一致，即这些洞的布局就是要生长的LED的布局，后续在生长LED时，这些洞可以让化学物质进入，从而完成LED的生长。
掩膜板的大小需要大于等于最终要制造的LED显示屏的大小例如，大于等于5.5寸或者5.2寸等。实际使过程中，可以让掩膜板的大小大于要制造的LED显示屏的大小，多余的部分可以用来进行固定或者起到更多的保护作用。掩膜板的形状并不限定，只要能够在大小上满足上述条件即可。
掩膜板在使用过程中，可以贴住缓冲层，或者也可以跟缓冲层之间留一些微小的间隙，间隙具体大小并不限定，只要最终能够生长出符合厂家自定义指标的LED显示屏即可。
掩膜板可以通过特定的设备采用机械自动化地方式将其放置在缓冲层上(贴住缓冲层，或者相互之间保留一些微小间距)。例如，可以用一些用于固定的机械结构(如夹子)来将固定住掩膜板(如用夹子夹住掩膜板的周围)，从而将其固定在缓冲层的上方。
由于生长LED时，需要对三种颜色都进行生长，因此，掩膜的位置需要进行调整。
在一种实现方式中，如果三种LED的形状、大小都相同，则可以通过移动掩膜板的 位置来生长新的LED，例如，可控制机械结构将掩膜板平移一定距离(注意有时候直接平移可能会把生长出来的LED给切掉了，此时，可以先上升一些距离)，这样，又有新的缓冲层上的区域可以通过掩膜板上的洞暴露出来，从而可以通过往洞中通入实施例四中提到的各种化学物质来生长其他颜色LED。
在另一种实现方式中，还可以提供三个掩膜板，三个掩膜板中洞的形状、大小都不限定，从而可以满足更多LED布局要求。三个掩膜板具体可以通过“插拔更换”的方式来进行选择更换，例如，先将第一块掩膜板插到设备中，完成一种颜色LED的生长，然后再将这块掩膜板拔出，更换另一块掩膜板来完成另一种颜色LED的生长，再将这个掩膜板拔出，更换最后一块掩膜板来完成最后一种颜色LED的生长。
在另一种实现方式或，还可以分别三个掩膜板可以设置在同一个设备上，通过一个用于切换的机械结构来切换选择其中一个掩膜板。例如，如图10所示，为一种采用类似多CD换片的方式来选择其中一个掩膜板的装置的结构示意图，该示意图的角度是俯视基板17的俯视角度。该装置包括多个掩膜板(11、12、13)，每个掩膜板上的洞(图中未示出)的布局与最终要形成的各种颜色的布局相匹配，每个掩膜板可以通过一些固定件(14)进行固定，其中一个或多个固定件可以通过连接件16与一个旋转装置15相连。在工作时，可以控制旋转装置转到一定的角度，然后让掩膜板11进行工作，当掩膜板11工作完后，可以通过控制掩膜板12旋转到先前掩膜板11所在的区域来暴露出新的洞来让生长另一颜色LED，然后再通过控制掩膜板13旋转到先前掩膜板12的位置来生长另一颜色LED。
以上仅仅是一些示例，本申请也不限定使用其他的方法及设备来固定及使用掩膜板。
实施例六
基于上述各实施例，本实施例提供了另一种生长LED的方法。参见图11，本实施例用于生长LED的设备60包括第一反应腔63，第二反应腔65以及第三反应腔67，这三个反应腔分别用于完成不同颜色LED的生长，即可以完成实施例四当中S323-S327的步骤。同时，与实施例五类似，本实施例中也使用掩膜板来代替实施例四中的掩膜，掩膜板的设置可以参考实施例五中的描述，这里并不赘述。与实施例五不同的是，每个反应腔中放置一个掩膜板，用于生长一种颜色。
第一反应腔63与第二反应腔65之间包括第一传动室64，第二反应腔65与第三反应腔67之间包括第二传动室66，传动室(64、66)用于将反应腔中已经生长了LED的部件整体移动到另一反应腔中，去实现另一种颜色LED的生长。
设备60还可以包括第一加载互锁室(load-lock chamber)62、第二加载互锁室68、入口手套箱61以及出口手套箱69。其中，第一加载互锁室62用于存储待生长LED的原材料(例如实施例四中通过步骤S31处理后的带有缓冲层的基板)，第二加载互锁室用于存储生长了三种颜色LED后的材料。第一加载互锁室中还可以有一些例如机械手之类的装置将原材料送到第一反应腔中。类似地，第二加载互锁室用于从第三反应腔中获取生长了LED的原材料并送至出口手套箱。
手套箱的作用是提高洁净度。手套箱是一个密封的箱子，用户通过箱子中设置的手 套(通常使用橡胶手套)来摆放箱内的东西，例如，调整原材料的位置等。通过手套箱的设置以及操作都是现有技术，具体实现这里并不赘述。
此外，需要说明的是，手套箱是在大气压下工作，而反应腔通常是低压，因此，如果手套箱与反应腔之间直接连通的话，将导致手套箱中的橡胶手套爆炸。为了解决这个问题，加载互锁室需要隔断手套腔与反应腔，不能让手套箱与反应腔直接连通。具体的，以入口手套箱、第一加载互锁室以及第一反应腔为例，第一加载互锁室与入口手套箱以及第一反应腔之间分别设置有第一阀门611以及第二阀门612，可以防止气体流通。当需要使用手套箱时，先将第一加载互锁室的压力调到大气压，然后打开第一阀门611，这样，可以通过入口手套箱来进行各种操作。当操作完成后，关闭第一阀门611，同时调整第一加载互锁室里的压力为跟第一反应腔里压力相同的低压，然后打开第二阀门612，将原材料送到第一反应腔进行反应，然后再关闭第二阀门612。同理，第三反应腔、第二加载互锁室、出口手套箱的操作也类似，需要通过第三阀门613、第四阀门614来避免第三反应腔与出口手套箱之间直接连通。
类似地，各个反应腔与传动室之间也设置有阀门，例如，第一传动室与第一反应腔和第二反应腔之间分别设置有第五阀门615以及第六阀门616，第二传动室与第二反应腔以及第三反应腔之间分别设置有第七阀门617以及第八阀门618。跟加载互锁室的隔离作用类似，传动室也用于隔离不同反应腔(不同反应腔内压力也不同，也不能直接导通)，当需要在两上反应腔之间传送东西时，也需要控制传动室内的气压以及控制阀门开关及闭合来避免两个反应腔之间直接连通，工作原理与前述加载互锁室工作原理类似，例如，将需要第一反应腔与第二反应腔之间传送东西时，先关闭第一传动室两侧的阀门(通常就是处于关闭状态来防止第一反应腔与第二反应腔连通)，然后将第一传动室气压调整成跟第一反应腔内气压一样，然后打开第五阀门615，然后传送第一反应腔中的东西到第一传动室，然后关闭第五阀门615，然后再调整第一传动室气压跟第二反应腔内气压一样，然后打开第六阀门616，然后传送第一传动室的东西到第二反应腔中，然后关闭第六阀门616。
结合上述设备60，参见图13，下面对基于该设备对LED的生长进行具体描述。
S61、将一份或多份原材料放入入口手套箱。
其中，一份原材料是指经过实施例四中步骤S31处理后的带有缓冲层的一个基板。
S62、第一加载互锁室加载该一份或多份原材料。
可通过内置的机械手将原材料加载到第一加载互锁室，并且，可以在第一加载互锁室存储一份或者多份原材料。
S63、第一加载互锁室将原材料送到第一反应腔。
例如，可以通过控制机械手将原材料送入第一反应腔。
S64、第一反应腔使用掩膜板来生长蓝色LED。
第一反应腔中的掩膜板711中洞的布局跟要生长的蓝色LED布局一致，例如，参见图12中的(a)图，为掩膜板711上的多个洞731在原材料721上的垂直投影，通过掩膜板上的洞能够在原材料721上投影的区域生长出蓝色的LED(图中用B表示)。生长方法可参考实施例四中的S323-S327步骤。
S65、通过第一传动室将生长了蓝色LED的原材料送至第二反应腔来生长绿色LED。
第二反应腔中的掩膜板712中洞的布局跟要生长的绿色LED布局一致，例如，参见图12中的(b)图，为掩膜板712上的多个洞732在生长了蓝色LED的原材料722上的垂直投影，通过掩膜板上的洞能够在原材料722上投影的区域生长出绿色的LED(图中用G表示)。生长方法可参考实施例四中的S323-S327步骤。
S66、通过第二传动室将生长了蓝色、绿色LED的原材料送至第三反应腔来生长绿色LED。
第三反应腔中的掩膜板713中洞的布局跟要生长的红色LED布局一致，例如，参见图12中的(c)图，为掩膜板713上的多个洞733在生长了蓝色、绿色LED的原材料723上的垂直投影，通过掩膜板上的洞能够在原材料723上投影的区域生长出红色的LED(图中用R表示)。生长方法同样可参考实施例四中的S323-S327步骤。
S67、第二加载互锁室从第三反应腔中取出生长了三色LED的原材料。
例如，第二加载互锁室通过内置的机械手从第三反应腔中取出生长了三色LED的原材料。
S68、第二加载互锁式把生长了三色LED的原材料送至出口手套箱。
例如，通过机械手将原材料送到出口手套箱。
S69、通过出口手套箱获取出生长了三色LED的原材料。
实施例七
基于上述各实施例，本实施例提供了一种制造LED显示屏的方法，本实施例提供的方案用于在通过上述各实施例提供的生长LED的方法基础上来完成最终LED屏的制造。具体的，可以有多种方法来完成整个LED的制造，包括：
方法一
先在一个制造用的基板(如玻璃)上制造异构介质，例如，可以在基板上制造一层柔性介质层(如图5)来作为生长LED的异构介质，或者也可以在基板上制造柔性介质层以及驱动管(如图3)，将驱动管作为异构介质层来生长LED。在基板上制造柔性介质层，或者在基板上制造柔性介质层以及驱动管都为现有技术。
然后通过上述实施例提供的方法制造出缓冲层并且生长完LED后，再继续制造其他的层，制造其他层的方法为现有技术，可以使用现有各种方法来制造其他的层。
接着，可以先制造到透明电极这一层，然后切割成真正产品所需的形状(例如5.5寸矩形的显示屏)，然后再将从柔性介质层及以上所有部件从制造用的基板上转移到一个用于产品的基板(也可以是玻璃)，并继续制造剩余的部件(如粘接层以及盖板)，从而完成整个产品的生长。或者，也可以先完成剩余部件的制造，然后再切割成目标形状，再将切割后的从柔性介质层以上所有部件从制造用的基板上转移到一个用于产品的基板。
方法二
先在制造阶段进行切割，即在制造用的基板上生长完异质介质后，将异质介质切割与目标形状，然后制造缓冲层并生长LED。
接着，再生长完其他部件，然后将柔性介质层以上所有部件从制造用的基板上转移到一个用于产品的基板。或者，这一步也可以在生长完LED后，就转移到新的产品用的 基板，然后再制造其他剩余的部件。
方法三
首先仍然是在基板上制造异构介质，异构介质包括柔性介质层。
接着，将柔性介质层及以上所有部件都转移到产品用的基板。
然后再依次制造剩余的部件(即LED以上的各层)，直到做完透明电极，然后再切割成目标形状，然后再制造剩余的部分。或者，这一步中，也可以把所有剩余的部分都做完，然后再切割成目标形状。
需要说明的是，以上都是针对有柔性介质层的情况，如果没有柔性介质层要求(例如，直接在基板上完成生长)，此时，可以不需要转换，只要再制造完其他部件并切割即可。或者，也可以事先切割好，然后制造完所有部件后即完成产品的制造。
方法四
对于本申请实施例三提供的Micro LED显示屏的制造方法，可以先生长完Micro LED，然后制造保护层，然后再制造驱动管以及高度补偿层。
或者，也可以制造驱动管以及高度补偿层，然后再制造保护层，然后再生长Micro LED。
其他各层的顺序、转移的时机、切割的时机可参考上述几种方法，这里不再赘述。
实施例八
基于上述各实施例，本实施例公开了一种LED(发光二极管)，该LED由上述各种实施例提供的方案制造。
实施例九
参见图14，基于上述各实施例，本实施例公开了一种显示屏14，图14为该显示屏的俯视图。该显示屏包括了由上述各种实施例提供的方案制造的多个LED(141，142，…14n)，此外，显示屏还包括驱动电路142，用于驱动各个LED。需要说明的是，图中的虚线框仅用于对驱动电路进行示意，并不表示实际驱动电路的形状以及大小。实际驱动电路的设计为本领域技术人员所公知的技术，这里并不赘述。
该显示屏可以作为各种电子设备的显示屏，例如，作为手机、平板电脑等电子设备的显示屏。驱动电路142与各个LED的连接及控制方式为现有技术，本实施例并不赘述。
实施例十
参见图15，基于上述各实施例，本实施例公开了一种电子设备(例如，可以是智能手机、智能穿戴式设备、平板电脑等)，该电子设备包括显示屏151、处理器152、存储器153。显示屏采用实施例九中的显示屏，可包括驱动电路1512以及多个LED(1511，……151n)，处理器152与显示屏151的驱动电路1512耦合。存储器153用于存储处理器运行时所需的指令，处理器152用于读取并执行存储器153存储的指令，通过驱动电路来让显示屏151进行显示。
上举较佳实施例，对本申请的目的、技术方案和优点进行了进一步详细说明，所应理解的是，以上所述仅为本发明的一些实施例而已，并不用以限制本发明，凡在本申请的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本申请的保护范围之内。

Claims (15)

  1. 一种用于制造氮化镓基二极管(LED)显示屏的方法，其特征在于，所述氮化镓基二极管LED显示屏包括多种颜色LED，每种颜色LED从下到上包括：氮化镓(GaN)层、N型掺杂GaN层、多量子阱层、AlGaN层以及P型掺杂GaN层，其中，所述制造所述LED显示屏的方法包括：
    在异质介质上制造缓冲层，其中，所述异质介绍是指材料跟所述LED材料不一致的介质；
    在所述缓冲层上依次生长所述多种颜色LED，其中，生长每种颜色LED包括：
    在350～500摄氏度温度条件下生长所述GaN层，其中，生长过程中的气压为500～700mBar，V/III为2000～5000，生长速率为3～15nm/min(纳米/分钟)，其中，所述V/III是指5族元素N与3族元素Ga的摩尔比，所述生长速率是指一定时间内生成物质的厚度的增加量；
    在450～500摄氏度温度条件下在所述GaN层上生长所述N型掺杂GaN层，其中，生长过程中的气压在200～400mBar，V/III在6000～10000，生长速率在0.5～8um/h(微米/小时)；
    在400～500摄氏度温度条件下在所述N型掺杂GaN层上生长所述多量子阱层，其中，生长过程中的气压为200～400mBar，V/III为12000～30000，生长速率为0.5～3um/h；
    在400～500度条件下在所述多量子阱层上生长所述AlGaN层，其中，生长过程中的气压为50～300mBar，V/III为2000～5000，生长速率为0.5～2um/h；
    在400～500度条件下在所述AlGaN层上生长所述P型掺杂GaN层，其中，生长过程中的气压为200～400mBar，V/III为6000～10000，生长速率为0.5～8um/h。
  2. 如权利要求1所述的制造LED的方法，其特征在于，在生长各层时，待生长LED的区域与不需要生长LED的区域通过一个带有多个洞的隔离板隔离，其中，所述带洞掩膜层中的多个洞的布局与需要生长的LED的布局相同，所述多个洞用于让生长各层所需的化学物质通过，从而形成所述LED的各层。
  3. 如权利要求2所述的制造LED显示屏的方法，其特征在于，每一个颜色LED生长都在与之对应的一个生长设备中进行，每个生产设备中均包括一个所述隔离板。
  4. 如权利要求2所述的制造LED显示屏的方法，其特征在于，所有颜色LED生长都在一个生长设备中进行，所述生长设备可以通过插拔对应于不同颜色LED的所述隔离板来依次完成不同颜色LED的生长。
  5. 如权利要求2-4任一所述的方法，其特征在于，所述隔离板材料为不锈钢。
  6. 如权利要求1所述的制造LED的方法，其特征在于，在生长各层时，待生长LED的区域与不需要生长LED的区域通过暴露有多个洞的带洞掩膜层隔离，其中，所述带洞掩膜层中的多个洞的布局与需要生长的LED的布局相同，所述多个洞用于让生 长各层所需的化学物质通过，从而形成所述LED的各层。
  7. 如权利要求6所述的LED的方法，其特征在于，在生长所述GaN层之前，在所述缓冲层上制造一层没有洞的无洞掩膜层，再通过光刻法暴露出所述多个洞后形成所述带洞掩膜层。
  8. 如权利要求7所述的方法，其特征在于，所述无洞掩膜层采用采用等离子增强化学气相淀积(plasma-enhanced chemical vapor deposition，PECVD)方法来制造。
  9. 如权利要求1-8任一所述的方法，其特征在于，所述异质介质为包括柔性介质层，所述柔性介质层的材料为聚酰亚胺(PI)，或者聚甲基丙烯酸甲脂(PMMA)，或者聚碳酸脂(PC)。
  10. 如权利要求9所述的方法，其特征在于，所述方法还包括：
    将所述柔性介质层及以上的所有部件转移到用于产品的基板。
  11. 如权利要求1-10任一所述的方法，其特征在于，所述缓冲层的材料为钛(Ti)。
  12. 如权利要求1-10任一所述的方法，其特征在于，所述缓冲层的材料为石墨稀，或者碳纳米管。
  13. 一种发光二极管，其特征在于，包括：所述发光二极管由权1-12任一方法制造。
  14. 一种显示屏，其特征在于，包括驱动电路，多个如权利要求13所述的发光二极管，所述驱动电路用于驱动多个所述发光二极管发光。
  15. 一种电子设备，其特征在于，包括处理器、存储器以及如权利要求14所述的显示屏，所述存储器用于存储所述处理器运行时所需的指令，所述处理器用于读取并执行所述存储器存储的指令，并通过所述驱动电路来让所述显示屏显示。
PCT/CN2018/093595 2017-06-30 2018-06-29 Led制造方法及led、显示屏和电子设备 WO2019001564A1 (zh)

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CN111081828B (zh) * 2019-10-21 2021-01-12 华灿光电(苏州）有限公司 Micro LED外延片的生长方法及Micro LED外延片
CN113270437A (zh) 2020-02-17 2021-08-17 京东方科技集团股份有限公司 背板及其制备方法、显示装置
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101339970A (zh) * 2007-07-03 2009-01-07 索尼株式会社 氮化镓基半导体元件、使用其的光学装置及使用光学装置的图像显示装置
CN105304768A (zh) * 2014-05-30 2016-02-03 严敏 在积层电路板上直接磊晶生长多色led的方法及应用
US20160093665A1 (en) * 2014-09-26 2016-03-31 Glo Ab Monolithic image chip for near-to-eye display
CN108133910A (zh) * 2017-06-30 2018-06-08 华为技术有限公司 Led制造方法及led、显示屏和电子设备

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4687109B2 (ja) * 2005-01-07 2011-05-25 ソニー株式会社 集積型発光ダイオードの製造方法
CN101958333A (zh) * 2009-07-20 2011-01-26 上海半导体照明工程技术研究中心 一种半导体发光器件及其制备方法
CN103400915B (zh) * 2013-08-14 2016-12-28 中国科学院长春光学精密机械与物理研究所 一种微型led阵列芯片

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101339970A (zh) * 2007-07-03 2009-01-07 索尼株式会社 氮化镓基半导体元件、使用其的光学装置及使用光学装置的图像显示装置
CN105304768A (zh) * 2014-05-30 2016-02-03 严敏 在积层电路板上直接磊晶生长多色led的方法及应用
US20160093665A1 (en) * 2014-09-26 2016-03-31 Glo Ab Monolithic image chip for near-to-eye display
CN108133910A (zh) * 2017-06-30 2018-06-08 华为技术有限公司 Led制造方法及led、显示屏和电子设备

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