WO2019000490A1 - 气相沉积设备 - Google Patents

气相沉积设备 Download PDF

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Publication number
WO2019000490A1
WO2019000490A1 PCT/CN2017/092660 CN2017092660W WO2019000490A1 WO 2019000490 A1 WO2019000490 A1 WO 2019000490A1 CN 2017092660 W CN2017092660 W CN 2017092660W WO 2019000490 A1 WO2019000490 A1 WO 2019000490A1
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Prior art keywords
electrode
vapor deposition
intake pipe
deposition apparatus
opening
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PCT/CN2017/092660
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English (en)
French (fr)
Inventor
刘凤举
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US15/569,671 priority Critical patent/US20190003054A1/en
Publication of WO2019000490A1 publication Critical patent/WO2019000490A1/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes

Definitions

  • the invention relates to the field of vapor deposition coating technology, in particular to a vapor deposition apparatus.
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • a solid film is formed on the material.
  • PECVD has a large number of applications in the semiconductor and flat panel display industries, especially in the LTPS and OLED flat panel display industries.
  • PECVD equipment is an indispensable key equipment for the preparation of SiN x , SiO x and ASi (Amorphous silicon). A film whose solid film product can be applied to various soft substrates and hard substrates.
  • a PECVD apparatus generally generates a plasma by a pair or a pair of opposed electrode rolls, and a discharge region forms a discharge region between the two sets of electrodes, and an electron colliding molecule or atom generated by the discharge generates a plasma in the discharge region, and high energy
  • the chemical reaction of the reaction gas during the plasma movement constitutes a new component particle.
  • the new component particles form a regular motion under the control of the magnetic field and are ultimately deposited on the outer wall of the substrate or device to form a solid film.
  • a nozzle for ejecting gas is fixed in the processing chamber of the device, and a gas feed tube connected to the gas source is connected to the nozzle, and the gas ejected from the nozzle dissociates between the electrodes to form a plasma (plasma) ).
  • plasma plasma
  • the present invention provides a vapor deposition apparatus which can reduce the number of parts and reduce the volume of the apparatus.
  • a vapor deposition apparatus includes a cavity, a first electrode, a second electrode, and an intake pipe, wherein the cavity is provided with an air inlet and an exhaust port, and the first electrode and the second electrode are disposed at the a high frequency alternating current and a ground are respectively connected to the cavity, the first electrode is disposed on a side of the air inlet, and the second electricity a pole parallel to and opposite to the first electrode; the first electrode includes a first opening toward the air inlet and a second opening facing the air inlet and communicating with the first opening
  • the intake pipe is introduced from the intake port and connected to the first opening.
  • the first electrode is hollowly formed with a cavity structure, and the first opening and the second opening are respectively opened on two opposite faces of the cavity structure, and the second opening is And array settings.
  • the intake pipe is insulated from the first electrode.
  • an insulating connecting ring is connected between the air inlet pipe and the first opening, and the connecting ring is located in the cavity.
  • the outer surface of the connecting ring is sleeved with a first water-cooling tube.
  • the intake pipe is made of an insulating material.
  • the outer surface of the intake pipe is sleeved with a second water-cooling tube.
  • the exhaust port of the vacuum chamber is located on the side of the second electrode.
  • At least one layer of filter mesh is disposed in the first electrode.
  • the vapor deposition apparatus further includes an annular ferromagnetic body that is sleeved on an outer wall of the intake pipe.
  • the first electrode of the present invention has a first opening communicating with the intake pipe and a second opening for ejecting gas, and the external gas is connected to the first electrode and the second electrode by externally connecting the first electrode with high-frequency alternating current
  • the gap is ejected, eliminating the need to design additional nozzles, reducing the number of parts and reducing the size of the equipment.
  • FIG. 1 is a schematic structural view of a vapor deposition apparatus according to Embodiment 1 of the present invention.
  • FIG. 2 is a schematic structural view of a vapor deposition apparatus according to Embodiment 2 of the present invention.
  • FIG. 3 is a schematic structural view of a vapor deposition apparatus according to Embodiment 3 of the present invention.
  • the PECVD vapor deposition apparatus of the present embodiment mainly includes a cavity 10, a first electrode 11, a second electrode 12, and an air intake pipe 13, wherein the cavity 10 is provided with an air inlet and an exhaust port, first The electrode 11 and the second electrode 12 are both located in the cavity 10, and the first electrode 11 is connected to a high frequency alternating current (RF Power), the second electrode 12 is grounded, the first electrode 11 is disposed on the side of the air inlet, and the second electrode 12 is disposed.
  • RF Power high frequency alternating current
  • the first electrode 11 has a first opening 111 facing the air inlet and a second opening 112 facing away from the air inlet, communicating with the first opening 111, the air inlet 13 is self-injecting Introduced and connected to the first opening 111.
  • the interior of the first electrode 11 is hollow, forming a cavity structure.
  • the first opening 111 and the second opening 112 are respectively formed on two opposite faces of the cavity structure, and the second opening 112 has a plurality of arrays, and the array is disposed at the first The surface of the electrode 11.
  • the gas supplied from the gas source is introduced through the intake pipe 13, passes through the first opening 111 of the first electrode 11, and the cavity structure in the first electrode 11, and is ejected from the second opening 112, and the upper first electrode 11 is High frequency alternating current is applied, the second electrode 12 is grounded, and the gas is dissociated in the gap between the two electrodes to form a plasma.
  • the length of the second electrode 12 is preferably equal to or longer than the first electrode 11 so that the gas ejected from the first electrode 11 is sufficiently plasmaized.
  • the exhaust port of the vacuum chamber 10 of the embodiment is located on the side of the second electrode 12, and the ion pump can be accelerated by the air pump to be discharged into the subsequent process equipment.
  • the cavity 10 is also grounded to avoid affecting the plasmaization process.
  • the intake pipe 13 is insulated from the first electrode 11, and an insulating connecting ring 14 is connected between the intake pipe 13 and the first opening 111, and the connecting ring 14 is located inside the cavity 10.
  • the high-frequency alternating current can not enter the intake pipe 13, and the generation of parasitic plasma is avoided to the utmost, thereby avoiding the coating defects caused by the parasitic plasma generated by the intake pipe and improving the substrate yield.
  • parasitic plasma may also be formed in the intake pipe, and a portion of the parasitic plasma may form a loose film or particle.
  • a substance such as SiH4 is resolved to produce Si particles
  • the film or particles are blown into the cavity of the first electrode 11 by the gas and then fall onto the substrate, which causes a large number of defects on the film formed on the substrate, which is good for the product.
  • the rate has a big impact.
  • at least one filter screen 110 may be disposed in the first electrode 11 , and the filter mesh 110 straddles the cavity of the first electrode 11 to partition the cavity of the first electrode 11 into a figure.
  • the upper and lower portions shown in FIG. 1 can prevent the filter 110 from passing further through the second opening 112 even if the parasitic plasma causes film or particulate matter to form.
  • the outer surface of the connecting ring 14 of the present embodiment is also sleeved with a first water-cooling pipe 15 for continuous cooling to the first water-cooling pipe 15.
  • the liquid ensures that the joint remains in a good connection.
  • the intake pipe 13 of the present embodiment is entirely made of an insulating material, and a second water-cooling pipe 16 is disposed on the outer surface of the intake pipe 13 to cool the intake pipe 13 .
  • the high-frequency alternating current on the first electrode 11 is prevented from entering the intake pipe 13 to a utmost extent, and the reliability is greatly improved.
  • the PECVD vapor deposition apparatus of the present embodiment further has a ring-shaped (or spiral) ferromagnetic body 17 which is sleeved on the outer wall of the intake pipe 13. Even if the intake pipe 13 is made of a conductive material, when the high-frequency alternating current enters the region where the ferromagnetic body 17 is located, it will be subjected to a large magnetic resistance, and it is also possible to prevent the high-frequency alternating current from leaking to the insulated joint of the intake pipe 13 to generate a parasitic plasma. body.
  • the first electrode of the present invention has a first opening communicating with the intake pipe and a second opening for ejecting gas, and the external gas is connected to the first electrode and the second electrode by externally connecting the first electrode with high-frequency alternating current
  • the gap is ejected, eliminating the need to design additional nozzles, reducing the number of parts and reducing the size of the equipment.
  • coating defects caused by parasitic plasma generated by the intake pipe can be avoided, and the substrate yield can be improved.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

一种气相沉积设备，包括腔体(10)、第一电极(11)、第二电极(12)以及进气管(13)，所述腔体(10)上开设有进气口和排气口，所述第一电极(11)、所述第二电极(12)设于所述腔体(10)内且分别接高频交流电和接地，所述第一电极(11)设于所述进气口所在侧，所述第二电极(12)与所述第一电极(11)平行且相对设置；所述第一电极(11)包括朝向所述进气口的第一开口(111)和背向所述进气口、与所述第一开口(111)连通的第二开口(112)，所述进气管(13)自所述进气口引入并连接在所述第一开口(111)。第一电极(11)上具有连通进气管(13)的第一开口(111)和喷出气体的第二开口(112)，通过将第一电极(11)外接高频交流电，即可将通入的气体朝第一电极(11)与第二电极(12)的间隙喷出，不需要额外设计喷头，减少了零部件数量，也减小了设备体积。

Description

气相沉积设备 技术领域
本发明涉及一种气相沉积镀膜技术领域，尤其涉及一种气相沉积设备。
背景技术
等离子体增强化学气相沉积法PECVD(Plasma Enhanced Chemical Vapor Deposition)借助于气体辉光放电产生的低温等离子体，增强反应位置的化学活性，促进了气体间的化学反应，从而在低温下也能在基材上形成固体膜。PECVD在半导体和平板显示行业有大量的应用，尤其是在LTPS和OLED平板显示行业，PECVD设备是不可或缺的关键设备，用于制备SiNx，SiOx和ASi(Amorphous silicon，即无定型硅)薄膜，其固体膜产品可以敷在各种软基材、硬基材上。
PECVD设备通常通过一对或若干对电极辊对向放电产生等离子体，一个放电区域在两组电极之间形成放电区，放电区域内通过放电产生的电子碰撞分子或原子产生等离子体，高能量的等离子体运动过程中促成反应气体的化学反应，组成了新成份粒子。新成份粒子在磁场的控制下形成规律性的运动，最终沉积在基材或设备的外壁上形成固态薄膜。
实际PECVD工艺中，设备的处理腔内固定有喷出气体的喷头，连接有气源的进气管路(Gas Feed Tube)与喷头连接，喷头喷出的气体在电极间解离形成等离子体(plasma)。然而，在电极间固定喷头并不方便，也增大了设备体积。
发明内容
鉴于现有技术存在的不足，本发明提供了一种气相沉积设备，可以减少零部件数量，并减小设备体积。
为了实现上述的目的，本发明采用了如下的技术方案：
一种气相沉积设备，包括腔体、第一电极、第二电极以及进气管，所述腔体上开设有进气口和排气口，所述第一电极、所述第二电极设于所述腔体内且分别接高频交流电和接地，所述第一电极设于所述进气口所在侧，所述第二电 极与所述第一电极平行且相对设置；所述第一电极包括朝向所述进气口的第一开口和背向所述进气口、与所述第一开口连通的第二开口，所述进气管自所述进气口引入并连接在所述第一开口。
作为其中一种实施方式，所述第一电极内部中空形成腔体结构，所述第一开口和所述第二开口分别开设在腔体结构的两个相对面上，所述第二开口为多个且阵列设置。
作为其中一种实施方式，所述进气管与所述第一电极绝缘设置。
作为其中一种实施方式，所述进气管与所述第一开口之间连接有绝缘的连接环，所述连接环位于所述腔体内。
作为其中一种实施方式，所述连接环外表面套设有第一水冷管。
或者，所述进气管为绝缘材料制成。
作为其中一种实施方式，所述进气管外表面套设有第二水冷管。
作为其中一种实施方式，所述真空腔体的所述排气口位于第二电极所在侧。
作为其中一种实施方式，所述第一电极内设置有至少一层过滤网。
作为其中一种实施方式，所述的气相沉积设备还包括环形的铁磁体，所述铁磁体套设在所述进气管的外壁。
本发明的第一电极上具有连通进气管的第一开口和喷出气体的第二开口，通过将第一电极外接高频交流电，即可将通入的气体朝第一电极与第二电极的间隙喷出，不需要额外设计喷头，减少了零部件数量，也减小了设备体积。
附图说明
图1为本发明实施例1的气相沉积设备的结构示意图；
图2为本发明实施例2的气相沉积设备的结构示意图；
图3为本发明实施例3的气相沉积设备的结构示意图。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
实施例1
参阅图1，本实施例的PECVD气相沉积设备主要包括腔体10、第一电极11、第二电极12以及进气管13，其中，腔体10上开设有进气口和排气口，第一电极11、第二电极12均位于腔体10内，且第一电极11接高频交流电(RF Power)，第二电极12接地，第一电极11设于进气口所在侧，第二电极12与第一电极11平行且相对设置；第一电极11具有朝向进气口的第一开口111和背向进气口、与第一开口111连通的第二开口112，进气管13自进气口引入并连接在第一开口111。
这里，进气管13插入进气口后，进气口被密封处理，保证腔体10内的气体不意外泄露。第一电极11的内部中空，形成腔体结构，第一开口111和第二开口112分别开设在该腔体结构的两个相对面上，第二开口112有许多个，且阵列设置在第一电极11表面。气源供给的气体被通过进气管13引入，依次经过第一电极11的第一开口111、第一电极11内的腔体结构后，自第二开口112喷出，上部的第一电极11被施加高频交流电，第二电极12接地，气体被在两个电极之间的间隙内解离形成等离子体。第二电极12的长度最好是等于或长于第一电极11，以使得第一电极11喷出的气体充分等离子化。
本实施例的真空腔体10的排气口位于第二电极12所在侧，可以通过抽气泵加速离子体排出至后续制程设备中。腔体10也接地处理，以避免影响等离子化过程。另外，进气管13与第一电极11绝缘设置，并且，在进气管13与第一开口111之间连接有绝缘的连接环14，该连接环14位于腔体10内。使得高频交流电无法进入到进气管13中，最大限度地避免了寄生等离子体的产生，从而避免了因进气管产生寄生等离子体而导致的镀膜缺陷，提升了基板良率。
即使本实施例通过对进气管13进行改进而改善了寄生等离子体产生的现象，然而由于各种未知原因，进气管内也有可能形成寄生等离子体，寄生等离子体的部位会形成疏松的薄膜或颗粒状的物质(如SiH4被解析产生Si颗粒物)，薄膜或颗粒物被气体吹到第一电极11的腔体中后落到基板上，会导致在基板上形成的膜有大量缺陷，对产品的良率有很大影响。为了进一步解决该问题，在第一电极11内还可以设置有至少一层过滤网110，该过滤网110横跨在第一电极11的腔体内，将第一电极11的腔体分隔成如图1所示的上下两部分，即使寄生等离子体导致薄膜或颗粒物形成，该过滤网110可以避免其进一步通过第二开口112。
为了避免进气管13与第一电极11连接处温度过高而断开，本实施例的连接环14外表面还套设有第一水冷管15，通过持续朝该第一水冷管15通入冷却液可以保证该连接处保持良好的连接状态。
实施例2
如图2所示，与实施例1不同，本实施例的进气管13整体为绝缘材料制成，并且在该进气管13外表面套设有第二水冷管16以对进气管13降温，最大限度地避免了第一电极11上的高频交流电进入进气管13，可靠性大幅提升。
实施例3
如图3所示，与实施例1、2不同的是，本实施例的PECVD气相沉积设备还具有环形(或螺旋形)的铁磁体17，该铁磁体17套设在进气管13的外壁，即使进气管13采用导电材料制成，当高频交流电进入该铁磁体17所在区域时将会受到很大的磁阻力，也可以防止高频交流电泄露到进气管13的绝缘连接处产生寄生等离子体。
本发明的第一电极上具有连通进气管的第一开口和喷出气体的第二开口，通过将第一电极外接高频交流电，即可将通入的气体朝第一电极与第二电极的间隙喷出，不需要额外设计喷头，减少了零部件数量，也减小了设备体积。同时，还可避免因进气管产生寄生等离子体而导致的镀膜缺陷，提升了基板良率。
以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (19)

  1. 一种气相沉积设备，其中，包括腔体、第一电极、第二电极以及进气管，所述腔体上开设有进气口和排气口，所述第一电极、所述第二电极设于所述腔体内且分别接高频交流电和接地，所述第一电极设于所述进气口所在侧，所述第二电极与所述第一电极平行且相对设置；所述第一电极包括朝向所述进气口的第一开口和背向所述进气口、与所述第一开口连通的第二开口，所述进气管自所述进气口引入并连接在所述第一开口。
  2. 根据权利要求1所述的气相沉积设备，其中，还包括环形的铁磁体，所述铁磁体套设在所述进气管的外壁。
  3. 根据权利要求1所述的气相沉积设备，其中，所述第一电极内部中空形成腔体结构，所述第一开口和所述第二开口分别开设在腔体结构的两个相对面上，所述第二开口为多个且阵列设置。
  4. 根据权利要求3所述的气相沉积设备，其中，还包括环形的铁磁体，所述铁磁体套设在所述进气管的外壁。
  5. 根据权利要求3所述的气相沉积设备，其中，所述进气管与所述第一电极绝缘设置。
  6. 根据权利要求5所述的气相沉积设备，其中，还包括环形的铁磁体，所述铁磁体套设在所述进气管的外壁。
  7. 根据权利要求5所述的气相沉积设备，其中，所述进气管与所述第一开口之间连接有绝缘的连接环，所述连接环位于所述腔体内。
  8. 根据权利要求7所述的气相沉积设备，其中，还包括环形的铁磁体，所述铁磁体套设在所述进气管的外壁。
  9. 根据权利要求7所述的气相沉积设备，其中，所述连接环外表面套设有第一水冷管。
  10. 根据权利要求9所述的气相沉积设备，其中，还包括环形的铁磁体，所述铁磁体套设在所述进气管的外壁。
  11. 根据权利要求5所述的气相沉积设备，其中，所述进气管为绝缘材料制成。
  12. 根据权利要求11所述的气相沉积设备，其中，还包括环形的铁磁体，所述铁磁体套设在所述进气管的外壁。
  13. 根据权利要求11所述的气相沉积设备，其中，所述进气管外表面套设有第二水冷管。
  14. 根据权利要求13所述的气相沉积设备，其中，还包括环形的铁磁体，所述铁磁体套设在所述进气管的外壁。
  15. 根据权利要求3所述的气相沉积设备，其中，所述真空腔体的所述排气口位于第二电极所在侧。
  16. 根据权利要求15所述的气相沉积设备，其中，还包括环形的铁磁体，所述铁磁体套设在所述进气管的外壁。
  17. 根据权利要求3所述的气相沉积设备，其中，所述第一电极内设置有至少一层过滤网。
  18. 根据权利要求17所述的气相沉积设备，其中，还包括环形的铁磁体，所述铁磁体套设在所述进气管的外壁。
  19. 一种气相沉积设备，其中，包括腔体、第一电极、第二电极以及进气管，所述腔体上开设有进气口和排气口，所述第一电极、所述第二电极设于所述腔体内且分别接高频交流电和接地，所述腔体接地，所述第一电极设于所述进气口所在侧，所述第二电极与所述第一电极平行且相对设置，且所述第一电极内设置有至少一层过滤网；所述第一电极包括朝向所述进气口的第一开口和背向所述进气口、与所述第一开口连通的第二开口，所述进气管自所述进气口引入并连接在所述第一开口。
PCT/CN2017/092660 2017-06-28 2017-07-12 气相沉积设备 Ceased WO2019000490A1 (zh)

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