WO2021233339A1 - 一种阻挡等离子体反流的进气结构 - Google Patents

一种阻挡等离子体反流的进气结构 Download PDF

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Publication number
WO2021233339A1
WO2021233339A1 PCT/CN2021/094610 CN2021094610W WO2021233339A1 WO 2021233339 A1 WO2021233339 A1 WO 2021233339A1 CN 2021094610 W CN2021094610 W CN 2021094610W WO 2021233339 A1 WO2021233339 A1 WO 2021233339A1
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WIPO (PCT)
Prior art keywords
intake
guide body
air
stratified
air inlet
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PCT/CN2021/094610
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English (en)
French (fr)
Inventor
刘海洋
刘小波
胡冬冬
张军
程实然
李娜
吴志浩
许开东
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江苏鲁汶仪器有限公司
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Publication of WO2021233339A1 publication Critical patent/WO2021233339A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Definitions

  • the invention relates to an air intake structure that blocks plasma backflow, and belongs to the technical field of semiconductor etching.
  • etching is one of the most important processes.
  • Plasma etching is one of the commonly used etching methods.
  • etching occurs in a vacuum reaction chamber, which usually includes electrostatic adsorption.
  • the chuck is used to carry the functions of adsorbing wafers, RF loads and cooling wafers.
  • the electrostatic adsorption chuck is usually placed on the susceptor in the middle of the vacuum processing chamber.
  • the wafer is located on the upper surface of the electrostatic adsorption chuck, and radio frequency is applied to the electrode on the top of the susceptor. , Make the plasma of the introduced reaction gas formed in the processing chamber to process the wafer.
  • the plasma is accelerated to the surface of the metal material under the action of the bias voltage.
  • the metal particles sputtered from the surface of the etching material will adhere to all exposed surfaces in the cavity, including the inner wall of the cavity and the coupling window at the top of the cavity, causing pollution.
  • the RF power is loaded on the top to excite the plasma during the cleaning process.
  • the active plasma will clean the grounded cavity, but it has almost no cleaning effect on the dielectric window. As time goes by, the contamination becomes more serious, and the deposits fall off and contaminate the wafer.
  • electrostatic shields can be used.
  • Faraday shields can be used in the plasma processing chamber to reduce the erosion of the plasma to the cavity materials.
  • the existing technology is to connect the central ceramic air inlet to the Faraday, and at the same time The radio frequency is connected, so that through the cleaning process, the coupling window and the central ceramic air inlet nozzle can be thoroughly cleaned; but when the radio frequency power is gradually increased, the cleaning gas enters the cavity through the air inlet channel, and is in the cavity under the action of the radio frequency power supply.
  • the inside of the body is ionized to form a plasma flow.
  • the plasma flow will return to the intake passage through the intake hole at the same time.
  • the intake passage is too close to the RF power point, resulting in ignition in the intake passage and damage to the intake guide body. use.
  • the present invention provides an air intake structure that blocks plasma backflow.
  • the air guide channel into an arcuate shape, the plasma backflow in the cavity can be reduced and the backflow gas can be prevented from contacting high-power radio frequency components, thereby avoiding the intake of air from being directed to the gas channel in the body. It communicates with the radio frequency components at a close distance, and at the same time avoids that the gas channel in the vertical direction is far enough for the electronic movement to ignite and damage the air intake structure.
  • An air intake structure for blocking plasma backflow including a reaction chamber, a coupling window is installed on the top of the reaction chamber, an air inlet nozzle is installed at the center of the coupling window, an air outlet is opened at the closed end of the air inlet nozzle, and the air inlet nozzle
  • the inlet guide body is embedded, and the inlet flange is sleeved on the opening end of the inlet nozzle. After the process gas passes through the inlet flange, it reaches the inside of the inlet nozzle through the inlet guide body and enters through the outlet of the inlet nozzle.
  • the aforementioned intake guide body includes a top intake guide, several layered intake guide groups, and a bottom intake guide.
  • the top intake guide is arranged at the junction of the intake flange and the intake nozzle, and the bottom intake
  • the air guide body is arranged at the bottom of the air inlet nozzle, and several layered air inlet guide groups are arranged between the top air inlet guide body and the bottom air inlet guide body;
  • Two air outlets are symmetrically opened on the circumferential wall of the closed end of the air inlet nozzle, an acute angle is formed between the air outlet and the closed end of the air inlet nozzle, and the air inlet guide at the bottom is connected with the air outlet;
  • the aforementioned stratified air intake guide group includes a first stratified air intake guide body and a second stratified air intake guide body arranged sequentially from top to bottom;
  • the first stratified air intake guide body is cylindrical, and its center protrudes upward to form a first air intake platform. With the center of the first air intake platform as the center of the circle, a number of openings are provided along the circumferential axial direction of the first layered air intake guide body. Through the first air inlet groove,
  • the second stratified air intake guide body is also cylindrical, and its center protrudes upward to form a second air intake platform. With the center of the second air intake platform as the center, it enters in the second layer along the circumference of the second air intake platform.
  • the air guide body is provided with a number of through second air inlet grooves in the axial direction; when the first stratified air inlet guide body is installed above the second stratified air inlet guide body or the second stratified air inlet guide body is installed on the first When the stratified intake air guide body is above, the first air intake passage is formed between the first stratified air intake guide body and the second stratified air intake guide body, and the first air intake passage is connected to the adjacent first air intake groove Or the second air inlet groove can be connected;
  • the aforementioned top intake guide body includes a cylindrical structure, with the center of the cylindrical structure as the center, a number of through top intake grooves are opened in the axial direction, and the inner diameter of the ring formed by the several top intake grooves is greater than or equal to the first inlet The diameter of the gas table;
  • the bottom of the top intake guide body expands outward along the circumference to form an insulating shoulder.
  • the cylindrical structure of the top intake guide body is embedded in the intake flange, and the insulating shoulder is embedded in the intake nozzle;
  • a first intake passage is formed between the two, and the top intake groove communicates with the first intake groove through the first intake passage;
  • the aforementioned bottom intake guide body is cylindrical, the center of which protrudes upward to form a third intake platform, and the non-protruding part of the bottom intake guide body forms an annular shoulder;
  • a second intake passage is formed between the bottom intake guide body and the second stratified intake guide body.
  • the air grooves are connected;
  • the aforementioned air intake guide body is made of insulating materials, such as plastics, ceramics or quartz.
  • the present invention has the following beneficial effects:
  • the gas guiding channel is designed into an arc shape, which can extend the communication distance between the gas channel in the intake guide body and the radio frequency component, thereby prolonging the return path of the plasma in the reaction chamber and preventing the returning plasma from contacting the high-power radio frequency component ;
  • the present invention changes the traditional vertical air guide channel, avoids the possibility that the gas channel in the vertical direction can form a sufficient electron movement ignition distance, thereby avoiding the possibility of damaging the air intake structure;
  • an insulating shoulder is provided at the contact part of the inlet nozzle and the inlet flange through the top inlet guide body, which eliminates the opportunity for the inlet flange and the gas in the inlet nozzle to directly face, thereby preventing the following
  • the increase in radio frequency power may cause ignition between the inlet flange and the inlet nozzle due to the backflow of plasma.
  • Figure 1 is a schematic diagram of the overall structure of the prior art of the present invention.
  • FIG. 2 is a schematic structural diagram of an intake guide provided in the prior art of the present invention.
  • Figure 3 is a schematic diagram of the overall structure of a preferred embodiment of the present invention.
  • FIG. 4 is a schematic diagram of the structure of the top intake guide body of the preferred embodiment of the present invention.
  • Fig. 5 is a schematic structural diagram of a first stratified air intake guide body according to a preferred embodiment of the present invention.
  • Fig. 6 is a schematic structural diagram of a second stratified air intake guide body according to a preferred embodiment of the present invention.
  • Fig. 7 is a cross-sectional view of the intake passage inside the intake guide body of the preferred embodiment of the present invention.
  • 111 is the upper RF matcher
  • 112 is the cavity cover
  • 113 is the coupling window
  • 114 is the coil
  • 115 is the inlet flange
  • 116 is the inlet nozzle
  • 117 is the inlet direction
  • 51 is the center Intake guide body
  • 511, 512 and 513 are all air guide passages
  • 50 is the intake nozzle
  • 52 is the intake flange
  • 90 is the top intake guide
  • 91 is the top intake groove
  • 92 is the insulating shoulder
  • 100 is the first stratified intake guide Body
  • 101 is the first air inlet groove
  • 102 is the first air inlet stage
  • 110 is the second stratified air inlet guide body
  • 111 is the second air inlet groove
  • 112 is the second air inlet stage
  • 120 is the bottom air inlet
  • 121 is a shaft shoulder
  • 122 is a third air inlet
  • 131 is a first air inlet passage
  • 132 is a second air inlet passage.
  • FIG. 1 The traditional etching system is shown in Figure 1.
  • An electrostatic adsorption chuck is set in the center of the reaction chamber, wafers are placed on the surface of the electrostatic adsorption chuck, a cavity cover 112 is set on the top of the reaction chamber, and a coupling window 113 is installed On the cavity cover 112, a central air inlet device is installed at the center of the coupling window 113.
  • FIG. 1 An electrostatic adsorption chuck is set in the center of the reaction chamber, wafers are placed on the surface of the electrostatic adsorption chuck, a cavity cover 112 is set on the top of the reaction chamber, and a coupling window 113 is installed On the cavity cover 112, a central air inlet device is installed at the center of the coupling window 113.
  • the central air inlet guide body 51 in the prior art As shown in Figure 2, the surface of the central intake guide body 51 is provided with an entire air guiding system consisting of air guiding channels 511, air guiding channels 512 and air guiding channels 513.
  • the upper radio frequency The line connecting the matcher 111 to the coil 114 is turned on, and the process gas enters through the inlet flange 115.
  • the inlet direction is shown as 117 in Fig. 1, and reaches the inlet nozzle 116 through the air guide system on the surface of the central inlet guide body 51. Inside, and then enter the reaction chamber through the outlet hole of the air inlet nozzle 116 to form plasma to etch the wafer;
  • the upper radio frequency matcher 111 closes the connecting coil 114 and opens the passage connected to the inlet flange 115.
  • the cleaning gas enters through the inlet flange 115 and passes through the air guide on the surface of the central inlet guide body 51.
  • the system reaches the inside of the inlet nozzle 116, and then enters the inside of the reaction chamber through the outlet hole of the inlet nozzle 116, forming ionization inside the chamber to clean the plasma gas flow, cleaning the inside and upper area of the chamber; but it is obvious from Figure 1 It can be seen that the inlet flange 115 is connected to the high-power cleaning radio frequency, and the air guide channel 513 on the central inlet guide body 51 is vertical.
  • the plasma formed in the cavity will pass through the bottom of the inlet nozzle 116.
  • the air port returns to the inside of the air guide channel 513, and the air inlet flange 115 is closely connected to the upper part of the air inlet guide body, so that the air guide channel 513 is connected to the air inlet flange 11552, and the gas discharges in this area, resulting in the air guide channel 513 High electric charge is formed inside, which burns out the intake guide body.
  • this application proposes an air intake structure for blocking plasma backflow, including a reaction chamber, a coupling window is installed on the top of the reaction chamber, an air inlet nozzle 50 is installed at the center of the coupling window, and the air inlet
  • the closed end of the nozzle 50 has an air outlet
  • the air inlet nozzle 50 is embedded with an air inlet guide body
  • the air inlet flange 52 is sleeved on the open end of the air inlet nozzle 50. After the process gas passes through the air inlet flange 52, it passes through the air inlet
  • the guide body reaches the inside of the air inlet nozzle 50 and enters the reaction chamber through the air outlet of the air inlet nozzle 50.
  • the aforementioned air inlet guide body includes a top air inlet guide body 90, several layered air inlet guide groups, and a bottom air inlet guide body. 120.
  • the top intake guide body 90 is set at the junction of the intake flange 52 and the intake nozzle 50
  • the bottom intake guide body 120 is set at the bottom of the intake nozzle 50
  • several layered intake guide groups are set on the top intake.
  • two air outlets are symmetrically opened on the circumferential wall of the closed end of the air inlet nozzle 50, and an acute angle is formed between the air outlet and the closed end of the air inlet nozzle 50, and the bottom inlet
  • the air guide body 120 penetrates with the air outlet.
  • the structure of the intake guide body is decomposed and divided into a top intake guide body 90, several layered intake guide groups, and a bottom intake guide body 120, so that the gas flow channel in the intake guide body and the upper radio frequency matcher
  • the communication distance between the two has been extended, so when the plasma in the reaction chamber recirculates, the return path will be correspondingly extended; at the same time, since the passage in the body of the decomposed intake guide body is not a vertical gas passage, then It also avoids the possibility that the gas channel in the vertical direction can form a sufficient ignition distance for electron movement, thereby avoiding the possibility of damaging the intake structure.
  • the present application provides one of the preferred embodiments of the air intake structure for blocking plasma backflow, as shown in FIG. 3,
  • the first stratified air inlet guide body 100 is cylindrical, and its center protrudes upward to form a first air inlet platform 102.
  • a number of first air-intake grooves 101 are provided on the circumference of the air-intake guide body 100,
  • the second stratified air intake guide body 110 is also cylindrical, and its center protrudes upward to form a second air intake platform 112.
  • the circumference of 112 is provided with a plurality of through second air inlet grooves 111 on the second stratified air inlet guide body 110;
  • the top intake guide body 90 includes a cylindrical structure, with its center as the center, a number of through top intake grooves 91 are opened, and the inner diameter of the ring formed by the plurality of top intake grooves 91 is greater than or equal to the first intake
  • the bottom air intake guide body 120 is cylindrical, the center of which protrudes upward to form a third air intake table 122, and the non-protruding part of the bottom air intake guide body 120 forms an annular shoulder 121;
  • the first stratified intake guide body 100 When the first stratified intake guide body 100 is installed above the second stratified intake guide body 110 or the second stratified intake guide body 110 is installed above the first stratified intake guide body 100, the first stratified intake guide A first intake passage 131 is formed between the intake guide body 100 and the second stratified intake guide body 110, and the first intake passage 131 is connected to the adjacent first intake groove 101 or the second intake groove 111, respectively.
  • Both can be connected; when the top intake guide body 90 is installed above the first stratified intake guide body 100, the first intake passage 131, the top intake groove 91 and the first intake groove are also formed between the two 101 is connected through the first intake passage 131; when the bottom intake guide body 120 is located below the second stratified intake guide body 110, the bottom intake guide body 120 and the second stratified intake guide body 110 are formed between The second intake passage 132 is in communication with the second intake groove 111.
  • each stratified intake guide group includes a first stratified intake guide body 100 and a second stratified intake that are arranged sequentially from top to bottom.
  • the air guide body 110 that is to say, the air intake guide body in the embodiment is arranged from top to bottom, and the top air intake guide body 90, the first stratified air intake guide body 100, and the second stratified air intake guide body are arranged in sequence Guide body 110, first stratified intake guide body 100, second stratified intake guide body 110, first stratified intake guide body 100, second stratified intake guide body 110, and bottom intake guide body 120
  • Fig. 7 shows a schematic diagram of the inlet passage direction of the preferred embodiment.
  • the gas After passing through the inlet flange 52, the gas enters the first inlet passage 131 through the top inlet groove 91, and then passes through the first inlet groove 101,
  • the intake passage inside the intake guide body provided by this embodiment is arcuately arranged from the cross-sectional view. Due to the structural design of the intake passage in the intake structure, it also combines the air intake nozzle 50 At the position of the air outlet, two air outlets are symmetrically opened on the circumferential wall of the closed end of the air inlet nozzle 50. An acute angle is formed between the air outlet and the closed end of the air inlet nozzle 50.
  • the second air inlet passage 132 is far away from the air outlet of the air inlet nozzle 50, and the process and cleaning gas pass through the tortuous air inlet path, just before entering the air outlet at the bottom of the air inlet nozzle 50 into the reaction chamber, in the second air inlet passage 132
  • the internal uniform flow greatly reduces the influence of the complicated air inlet path on the process and cleaning process results;
  • top intake guide body 90, the stratified intake guide group, and the bottom intake guide body 120 are in clearance fit with the intake nozzle 50 when they are embedded in the intake nozzle 50, a gap will appear on the mating surface.
  • the existence of the gap means that the gas passage between the inlet flange 52 and the inlet nozzle 50 has a directly facing space, which limits the RF power loaded on the inlet flange 52. As the RF power increases, The back flow of the plasma between the inlet flange 52 and the inlet nozzle 50 is likely to cause ignition. Therefore, as shown in FIG.
  • the bottom of the top inlet guide body 90 expands outward along the circumference to form an insulating shoulder 92 ,
  • the cylindrical structure of the top intake guide body 90 is embedded in the intake flange 52, and the insulating shoulder 92 is embedded in the intake nozzle 50; the existence of the insulating shoulder 92 prevents the intake flange 52 and the intake The opportunity for the gas in the nozzle 50 to directly face, thereby eliminating the possibility of ignition between the inlet flange 52 and the inlet nozzle 50 due to the backflow of plasma as the radio frequency power increases.
  • the gas guiding channel in the present application as an arcuate or other non-vertical channel as an example of the preferred embodiment, the plasma backflow in the reaction chamber can be reduced and the backflow gas can be prevented from contacting high-power radio frequency components, thereby avoiding entering
  • the gas channel in the gas guide body communicates with the radio frequency component at a close distance, and at the same time, it prevents the gas channel in the vertical direction from being sufficiently distant for electronic movement to ignite and damage the air intake structure.
  • connection in this application can be a direct connection between components or an indirect connection between components through other components.

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Abstract

一种阻挡等离子体反流的进气结构，将进气结构的进气导向体本体分成三部分，分别为顶部进气导向体（90）、若干分层进气导向组以及底部进气导向体（120），其中，顶部进气导向体（90）设置在进气法兰（52）与进气喷嘴（50）交接处，底部进气导向体（120）设置在进气喷嘴（50）底部，若干分层进气导向组设置在顶部进气导向体（90）、底部进气导向体（120）之间；在进气喷嘴（50）的封闭端圆周壁上对称开设两个出气口，出气口与进气喷嘴（50）的封闭端之间形成锐角，同时底部进气导向体（120）与出气口贯通；通过将导气通道设计成弓形，可以减小腔体内等离子体回流及阻止回流气体接触高功率射频部件，避免了进气导向体内气体通道与射频件近距离连通，同时避免垂直方向上的气体通道距离足够电子运动点火，损坏进气结构。

Description

一种阻挡等离子体反流的进气结构
技术领域
本发明涉及一种阻挡等离子体反流的进气结构，属于半导体刻蚀技术领域。
背景技术
在半导体集成电路制造工艺中，刻蚀是其中最为重要的一道工序，其中等离子体刻蚀是常用的刻蚀方式之一，通常刻蚀发生在真空反应腔室内，通常真空反应腔室内包括静电吸附卡盘，用于承载吸附晶圆、射频负载及冷却晶圆等作用。目前在对半导体器件等的制作过程中，通常将静电吸附卡盘放置在真空的处理腔室中部的基座上，晶圆位于静电吸附卡盘的上表面，在基座顶部的电极中施加射频，使在处理腔室内形成引入的反应气体的等离子体对晶圆进行加工处理，在进行一些非挥发性金属材料的刻蚀过程中，等离子体在偏压的作用下加速达到金属材料表面，从刻蚀材料表面溅射出的金属颗粒会附着在腔体内所有暴露的表面上，包括腔体内壁及腔体顶部的耦合窗，造成污染，为了解决污染，需要在腔室内部通入清洗气体，并在顶部加载射频功率对清洗气体进行电离，带走这些污染颗粒，由于整个清洗过程中腔体是接地的，而顶部耦合窗由于是绝缘材质，所以清洗过程中顶部射频加载射频功率激发等离子体，活性的等离子体会清洗接地的腔体，但对介质窗清洗效果几乎没有，随着时间的推移污染物叠加更加严重，出现沉积物脱落污染晶圆的现象。
为了彻底清洁耦合窗，可以采用静电屏蔽件，法拉第屏蔽用于等离子体处理腔室中可以减少等离子体对腔体材料的侵蚀，目前已有的技术是将中部陶瓷进气嘴与法拉第相连，同时通上射频，这样通过清洗工艺，耦合窗和中部陶瓷进气嘴均可以彻底清洗干净；但当射频功率逐渐加大时，清洗气体通过进气通道进入腔体，在射频电源的作用下在腔体内部电离，形成等离子体流，等离子体流同时会通过进气孔返回到进气通道内，进气通道距离射频功率点距离过近，导致进气通道内点火，损坏进气导向体，不可使用。
发明内容
本发明提供一种阻挡等离子体反流的进气结构，通过将导气通道设计成弓形，可以减小腔体内等离子体回流及阻止回流气体接触高功率射频部件，避免了进气导向体内气体通道与射频件近距离连通，同时避免垂直方向上的气体通道距离足够电子运动点火，损坏进气结构。
本发明解决其技术问题所采用的技术方案是：
一种阻挡等离子体反流的进气结构，包括反应腔室，在反应腔室的顶部安装耦合窗，耦合窗中心位置安装进气喷嘴，进气喷嘴的封闭端开设出气口，进气喷嘴内嵌设进气导向体本体，进气法兰套设在进气喷嘴开口端，工艺气体经过进气法兰后，通过进气导向体本体到达进气喷嘴内部，通过进气喷嘴的出气口进入反应腔室内，
前述的进气导向体本体包括顶部进气导向体、若干分层进气导向组以及底部进气导向体，其中，顶部进气导向体设置在进气法兰与进气喷嘴交接处，底部进气导向体设置在进气喷嘴底部，若干分层进气导向组设置在顶部进气导向体、底部进气导向体之间；
在进气喷嘴的封闭端圆周壁上对称开设两个出气口，出气口与进气喷嘴的封闭端之间形成锐角，同时底部进气导向体与出气口贯通；
作为本发明的进一步优选，
前述的分层进气导向组包括由上至下顺次叠加布设的第一分层进气导向体和第二分层进气导向体；
第一分层进气导向体呈圆柱状，其中心向上凸起形成第一进气台，以第一进气台中心为圆心，沿着第一分层进气导向体圆周轴向方向开设若干贯通的第一进气槽，
第二分层进气导向体同样呈圆柱状，其中心向上凸起形成第二进气台，以第二进气台中心为圆心，沿着第二进气台的圆周在第二分层进气导向体轴向方向上开设若干贯通的第二进气槽；当第一分层进气导向体安装在第二分层进气导向体上方或第二分层进气导向体安装在第一分层进气导向体上方时，第一分层进气导向体与第二分层进气导向体之间均形成第一进气通道，第一进气通道与相邻的第一进气槽或第二进气槽均可形成连通；
作为本发明的进一步优选，
前述的顶部进气导向体包括圆柱结构，以圆柱结构的中心为圆心，在轴向方向开设若干贯通的顶部进气槽，且若干顶部进气槽形成的圆环内直径大于或等于第一进气台的直径；
在顶部进气导向体的底部沿着圆周向外膨胀形成绝缘轴肩，顶部进气导向体的圆柱结构嵌设在进气法兰内，绝缘轴肩嵌设在进气喷嘴内；
当顶部进气导向体安装在第一分层进气导向体上方时，两者之间形成第一进气通道，顶部进气槽通过第一进气通道与第一进气槽形成连通；
作为本发明的进一步优选，
前述的底部进气导向体呈圆柱状，其中心向上凸起形成第三进气台，底部进气导向体未凸起的部分形成圆环状的轴肩；
当底部进气导向体位于第二分层进气导向体下方时，底部进气导向体与第二分层进气导向体 之间形成第二进气通道，第二进气通道与第二进气槽形成连通；
作为本发明的进一步优选，
前述的进气导向体本体采用绝缘材料制作，选用塑料或陶瓷或石英。
通过以上技术方案，相对于现有技术，本发明具有以下有益效果：
本发明将导气通道设计成弓形，可以延长进气导向体内气体通道与射频件之间连通的距离，从而使得反应腔室内等离子体回流的路程延长，阻止这些回流的等离子体接触高功率射频部件；
本发明改变了传统垂直形状的导气通道，避免了垂直方向上的气体通道能够形成足够电子运动点火距离的可能性，从而避免了损坏进气结构的可能性；
本发明在进气喷嘴和进气法兰相接触的部分通过顶部进气导向体设置了绝缘轴肩，杜绝了进气法兰与进气喷嘴中气体直接面对的机会，从而杜绝了随着射频功率的提高进气法兰与进气喷嘴之间由于等离子体的反流导致打火的可能。
附图说明
下面结合附图和实施例对本发明进一步说明。
图1是本发明现有技术的整体结构示意图；
图2是本发明现有技术中提供的进气导向体的结构示意图；
图3是本发明优选实施例的整体结构示意图；
图4是本发明优选实施例的顶部进气导向体结构示意图；
图5是本发明优选实施例的第一分层进气导向体结构示意图；
图6是本发明优选实施例的第二分层进气导向体结构示意图；
图7是本发明优选实施例的进气导向体本体内部的进气通道剖视图。
图1-图2中：111为上部射频匹配器，112为腔盖，113为耦合窗，114为线圈，115为进气法兰，116为进气喷嘴，117为进气方向，51为中心进气导向体，511、512以及513均为导气通道；
图3-图7中：50为进气喷嘴，52为进气法兰，90为顶部进气导向体，91为顶部进气槽，92为绝缘轴肩，100为第一分层进气导向体，101为第一进气槽，102为第一进气台，110为第二分层进气导向体，111为第二进气槽，112为第二进气台，120为底部进气导向体，121为轴肩，122为第三进气台，131为第一进气通道，132为第二进气通道。
具体实施方式
现在结合附图对本发明作进一步详细的说明。这些附图均为简化的示意图，仅以示意 方式说明本发明的基本结构，因此其仅显示与本发明有关的构成。
传统的刻蚀系统如图1所示，在反应腔室的中心位置设置静电吸附卡盘，在静电吸附卡盘的表面安置晶圆，反应腔室的顶部设置腔盖112，耦合窗113安装在腔盖112上，在耦合窗113的中心位置安装中心进气装置，由图1中可知，包括进气喷嘴116、中心进气导向体51以及进气法兰115，其中进气法兰115为金属材质，其与上部射频匹配器111相连接；中心进气装置外部位于耦合窗113的上表面配置有线圈114，也连接至上部射频匹配器111；现有技术中的中心进气导向体51如图2所示，在中心进气导向体51的表面开设由导气通道511、导气通道512以及导气通道513构成的整条导气系统，当反应腔室进行工艺操作时，上部射频匹配器111连接到线圈114的线路导通，工艺气体经过进气法兰115进入，进气方向如图1中117所示，通过中心进气导向体51表面的导气系统到达进气喷嘴116内部，进而通过进气喷嘴116的出气孔进入反应腔室内部，形成等离子体，对晶圆进行刻蚀；
当对系统进行清洗时，上部射频匹配器111关闭连接线圈114，打开连接至进气法兰115的通路，同时清洗气体通过进气法兰115进入，通过中心进气导向体51表面的导气系统到达进气喷嘴116内部，进而通过进气喷嘴116的出气孔进入反应腔室内部，在腔体内部形成电离成清洗等离子体气流，清洗腔室内部及上部区域；但是从图1中可以明显看出，进气法兰115连接到高功率的清洗射频，且中心进气导向体51上的导气通道513为竖直方向，在腔体内部形成的等离子体会通过进气喷嘴116底部的出气口返回到导气通道513内部，而进气法兰115与进气导向体上部紧密连接，使得导气通道513与进气法兰11552导通，气体在此区域内放电，导致导气通道513内部形成高电荷，烧坏进气导向体。
基于上述提到的缺陷，本申请提出了一种阻挡等离子体反流的进气结构，包括反应腔室，在反应腔室的顶部安装耦合窗，耦合窗中心位置安装进气喷嘴50，进气喷嘴50的封闭端开设出气口，进气喷嘴50内嵌设进气导向体本体，进气法兰52套设在进气喷嘴50开口端，工艺气体经过进气法兰52后，通过进气导向体到达进气喷嘴50内部，通过进气喷嘴50的出气口进入反应腔室内，前述的进气导向体本体包括顶部进气导向体90、若干分层进气导向组以及底部进气导向体120，其中，顶部进气导向体90设置在进气法兰52与进气喷嘴50交接处，底部进气导向体120设置在进气喷嘴50底部，若干分层进气导向组设置在顶部进气导向体90、底部进气导向体120之间；在进气喷嘴50的封闭端圆周壁上对称开设两个出气口，出气口与进气喷嘴50的封闭端之间形成锐角，同时底部进气导向体120与出气口贯通。
将进气导向体本体的结构进行分解，分成顶部进气导向体90、若干分层进气导向组 以及底部进气导向体120，使得进气导向体本体内气体的流通通道与上部射频匹配器之间连通的距离获得了延长，那么当反应腔室内的等离子体回流时其回流路程也会获得相应的延长；同时由于分解后的进气导向体本体内通道并不是垂直向的气体通道，那么其还避免了垂直方向上的气体通道能够形成足够电子运动点火距离的可能性，从而避免了损坏进气结构的可能性。
实施例：
本申请提供关于阻挡等离子体反流的进气结构的优选实施例之一如图3所示，
其中，图5所示，第一分层进气导向体100呈圆柱状，其中心向上凸起形成第一进气台102，以第一进气台102中心为圆心，沿着第一分层进气导向体100圆周开设若干贯通的第一进气槽101，
图6所示，第二分层进气导向体110同样呈圆柱状，其中心向上凸起形成第二进气台112，以第二进气台112中心为圆心，沿着第二进气台112的圆周在第二分层进气导向体110上开设若干贯通的第二进气槽111；
图4所示，顶部进气导向体90包括圆柱结构，以其中心为圆心，开设若干贯通的顶部进气槽91，且若干顶部进气槽91形成的圆环内直径大于或等于第一进气台102的直径；底部进气导向体120呈圆柱状，其中心向上凸起形成第三进气台122，底部进气导向体120未凸起的部分形成圆环状的轴肩121；
当第一分层进气导向体100安装在第二分层进气导向体110上方或第二分层进气导向体110安装在第一分层进气导向体100上方时，第一分层进气导向体100与第二分层进气导向体110之间均形成第一进气通道131，第一进气通道131分别与相邻的第一进气槽101或第二进气槽111均可形成连通；当顶部进气导向体90安装在第一分层进气导向体100上方时，两者之间同样形成第一进气通道131，顶部进气槽91与第一进气槽101通过第一进气通道131形成连通；当底部进气导向体120位于第二分层进气导向体110下方时，底部进气导向体120与第二分层进气导向体110之间形成第二进气通道132，第二进气通道132与第二进气槽111形成连通。
在本实施例中，分层进气导向组设置了三组，每个分层进气导向组包括由上至下顺次叠加布设的第一分层进气导向体100和第二分层进气导向体110；也就是说，实施例中的进气导向体本体由上至下，顺次布设了顶部进气导向体90、第一分层进气导向体100、第二分层进气导向体110、第一分层进气导向体100、第二分层进气导向体110、第一分层进气导向体100、第二分层进气导向体110以及底部进气导向体120，图7给出了优选实施例的 进气通道走向示意图，气体经过进气法兰52后，经过顶部进气槽91进入第一进气通道131，再顺次经过第一进气槽101、第一进气通道131、第二进气槽111、第一进气通道131、第一进气槽101、第一进气通道131、第二进气槽111、第一进气通道131、第一进气槽101、第一进气通道131、第二进气槽111以及第二进气通道132，第二进气通道132与进气喷嘴50的出气口连通，气体最后经由出气口排出；
当反应腔室内的等离子体气流通过进气喷嘴50底部的出气口回流时，进入进气导向体本体内部弓形进气通道，极大的增加了等离子体气流在该弓形进气通道内撞击进气导向体本体内部的实体壁上的面积和机率，电子会随着碰撞能量逐渐消失，由于带射频功率的进气法兰52附近的区域为绝缘不带电，因此与高功率部件导通的路径无法形成，从而保护了进气导向体本体免受高热量高射频的损伤；
从图7中可以看出，本实施例提供的进气导向体本体内部的进气通道从剖面图看为弓形设置，由于进气结构内进气通道的结构设计，同时结合进气喷嘴50的出气口位置，两个出气口对称开设在进气喷嘴50封闭端圆周壁上，出气口与进气喷嘴50的封闭端之间形成锐角，同时底部进气导向体120与出气口贯通，使得第二进气通道132远离进气喷嘴50的出气口，工艺和清洗气体在经过曲折的进气路径，在即将进入进气喷嘴50底部的出气口进入反应腔室之前，在第二进气通道132内匀流，极大的减少了复杂的进气路径对工艺和清洗工艺结果的影响；
由于顶部进气导向体90、分层进气导向组以及底部进气导向体120嵌设在进气喷嘴50内时与进气喷嘴50为间隙配合，那么就会导致在配合面出现空隙，此空隙的存在即意味着进气法兰52与进气喷嘴50之间的气体通道有直接面对的空间，从而限制了加载在进气法兰52上的射频功率，随着射频功率的提高，进气法兰52与进气喷嘴50之间由于等离子体的反流容易导致打火，因此如图4所示，在顶部进气导向体90的底部沿着圆周向外膨胀形成绝缘轴肩92，顶部进气导向体90的圆柱结构嵌设在进气法兰52内，绝缘轴肩92嵌设在进气喷嘴50内；此绝缘轴肩92的存在杜绝了进气法兰52与进气喷嘴50中气体直接面对的机会，从而杜绝了随着射频功率的提高进气法兰52与进气喷嘴50之间由于等离子体的反流导致打火的可能。
由此可知，本申请通过将导气通道设计成以优选实施例为例的弓形或者其他非垂直通道，可以减小反应腔室内等离子体回流以及可以阻止回流气体接触高功率射频部件，避免了进气导向体内气体通道与射频件近距离连通，同时避免了垂直方向上的气体通道距离足够电子运动点火，损坏进气结构。
本技术领域技术人员可以理解，除非另外定义，这里使用的所有术语(包括技术术语和科学术语)具有与本申请所属领域中的普通技术人员的一般理解相同的意义。还应该理解的是，诸如通用字典中定义的那些术语应该被理解为具有与现有技术的上下文中的意义一致的意义，并且除非像这里一样定义，不会用理想化或过于正式的含义来解释。
本申请中所述的“和/或”的含义指的是各自单独存在或两者同时存在的情况均包括在内。
本申请中所述的“连接”的含义可以是部件之间的直接连接也可以是部件间通过其它部件的间接连接。
以上述依据本发明的理想实施例为启示，通过上述的说明内容，相关工作人员完全可以在不偏离本项发明技术思想的范围内，进行多样的变更以及修改。本项发明的技术性范围并不局限于说明书上的内容，必须要根据权利要求范围来确定其技术性范围。

Claims (5)

  1. 一种阻挡等离子体反流的进气结构，包括反应腔室，在反应腔室的顶部安装耦合窗，耦合窗中心位置安装进气喷嘴(50)，进气喷嘴(50)的封闭端开设出气口，进气喷嘴(50)内嵌设进气导向体本体，进气法兰(52)套设在进气喷嘴(50)开口端，工艺气体经过进气法兰(52)后，通过进气导向体本体到达进气喷嘴(50)内部，通过进气喷嘴(50)的出气口进入反应腔室内，其特征在于：
    前述的进气导向体本体包括顶部进气导向体(90)、若干分层进气导向组以及底部进气导向体(120)，其中，顶部进气导向体(90)设置在进气法兰(52)与进气喷嘴(50)交接处，底部进气导向体(120)设置在进气喷嘴(50)底部，若干分层进气导向组设置在顶部进气导向体(90)、底部进气导向体(120)之间；
    在进气喷嘴(50)的封闭端圆周壁上对称开设两个出气口，出气口与进气喷嘴(50)的封闭端之间形成锐角，同时底部进气导向体(120)与出气口贯通。
  2. 根据权利要求1所述的阻挡等离子体反流的进气结构，其特征在于：
    前述的分层进气导向组包括由上至下顺次叠加布设的第一分层进气导向体(100)和第二分层进气导向体(110)；
    第一分层进气导向体(100)呈圆柱状，其中心向上凸起形成第一进气台(102)，以第一进气台(102)中心为圆心，沿着第一分层进气导向体(100)圆周轴向方向开设若干贯通的第一进气槽(101)，
    第二分层进气导向体(110)同样呈圆柱状，其中心向上凸起形成第二进气台(112)，以第二进气台(112)中心为圆心，沿着第二进气台(112)的圆周在第二分层进气导向体(110)轴向方向上开设若干贯通的第二进气槽(111)；
    当第一分层进气导向体(100)安装在第二分层进气导向体(110)上方或第二分层进气导向体(110)安装在第一分层进气导向体(100)上方时，第一分层进气导向体(100)与第二分层进气导向体(110)之间均形成第一进气通道(131)，第一进气通道(131)与相邻的第一进气槽(101)或第二进气槽(111)均可形成连通。
  3. 根据权利要求2所述的阻挡等离子体反流的进气结构，其特征在于：
    前述的顶部进气导向体(90)包括圆柱结构，以圆柱结构的中心为圆心，在轴向方向开设若干贯通的顶部进气槽(91)，且若干顶部进气槽(91)形成的圆环内直径大于或等于第一进气台(102)的直径；
    在顶部进气导向体(90)的底部沿着圆周向外膨胀形成绝缘轴肩(92)，顶部进气导向体(90)的圆柱结构嵌设在进气法兰(52)内，绝缘轴肩(92)嵌设在进气喷嘴(50)内；
    当顶部进气导向体(90)安装在第一分层进气导向体(100)上方时，两者之间形成第一进气通道(131)，顶部进气槽(91)通过第一进气通道(131)与第一进气槽(101)形成连通。
  4. 根据权利要求3所述的阻挡等离子体反流的进气结构，其特征在于：
    前述的底部进气导向体(120)呈圆柱状，其中心向上凸起形成第三进气台(122)，底部进气导向体(120)未凸起的部分形成圆环状的轴肩(121)；
    当底部进气导向体(120)位于第二分层进气导向体(110)下方时，底部进气导向体(120)与第二分层进气导向体(110)之间形成第二进气通道(132)，第二进气通道(132)与第二进气槽(111)形成连通。
  5. 根据权利要求1所述的阻挡等离子体反流的进气结构，其特征在于：前述的进气导向体本体采用绝缘材料制作，选用塑料或陶瓷或石英。
PCT/CN2021/094610 2020-05-20 2021-05-19 一种阻挡等离子体反流的进气结构 WO2021233339A1 (zh)

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