WO2018237236A1 - Homogeneous anaerobically stable quantum dot concentrates - Google Patents

Homogeneous anaerobically stable quantum dot concentrates Download PDF

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Publication number
WO2018237236A1
WO2018237236A1 PCT/US2018/038934 US2018038934W WO2018237236A1 WO 2018237236 A1 WO2018237236 A1 WO 2018237236A1 US 2018038934 W US2018038934 W US 2018038934W WO 2018237236 A1 WO2018237236 A1 WO 2018237236A1
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nanostructure
nanostructures
nanostructure composition
composition
hours
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English (en)
French (fr)
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Austin Smith
David Olmeijer
Jared LYNCH
Minghu TU
Charles HOTZ
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Priority to KR1020207001921A priority Critical patent/KR102690602B1/ko
Priority to CN201880041937.XA priority patent/CN111051468B/zh
Priority to JP2019568150A priority patent/JP7293138B2/ja
Publication of WO2018237236A1 publication Critical patent/WO2018237236A1/en
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Definitions

  • the nanostructure composition comprises two populations of nanostructures, one reactive diluent, and one anaerobic stabilizer.
  • the at least one anaerobic stabilizer is a nitroxide- containing compound or a nitroso-containing compound. In some embodiments, the at least one anaerobic stabilizer is a nitroxide- containing compound or a nitroso-containing compound. In some embodiments, the at least one anaerobic stabilizer is a nitroxide- containing compound or a nitroso-containing compound. In some embodiments, the at least one anaerobic stabilizer is a nitroxide- containing compound or a nitroso-containing compound. In some embodiments, the at least one anaerobic stabilizer is a nitroxide- containing compound or a nitroso-containing compound. In some embodiments, the at least one anaerobic stabilizer is a nitroxide- containing compound or a nitroso-containing compound. In some embodiments, the at least one anaerobic stabilizer is a nitroxide- containing compound or a
  • the at least one organic resin is a thermosetting resin or a UV curable resin. In some embodiments, the at least one organic resin is a UV curable resin. In some embodiments, the at least one organic resin is a mercapto-functional compound.
  • composition comprising two populations of nanostructures is provided in (a).
  • the at least one population of nanostructures contains a core selected from the group consisting of InP, InZnP, InGaP, CdSe, CdS, CdSSe, CdZnSe, CdZnS, ZnSe, ZnSSe, InAs, InGaAs, and InAsP.
  • the at least one anaerobic stabilizer is a nitroxide- containing compound or a nitroso-containing compound. In some embodiments, the at least one anaerobic stabilizer is a nitroxide- containing compound or a nitroso-containing compound. In some embodiments, the at least one anaerobic stabilizer is a nitroxide- containing compound or a nitroso-containing compound. In some embodiments, the at least one anaerobic stabilizer is a nitroxide- containing compound or a nitroso-containing compound. In some embodiments, the at least one anaerobic stabilizer is a nitroxide- containing compound or a nitroso-containing compound. In some embodiments, the at least one anaerobic stabilizer is a nitroxide- containing compound or a nitroso-containing compound. In some embodiments, the at least one anaerobic stabilizer is a nitroxide- containing compound or a
  • the at least one reactive diluent is isobornyl acrylate and the at least one anaerobic stabilizer is 4-hydroxy-TEMPO.
  • the nanostructure composition comprises as a weight percentage about 200 ppm 4-hydroxy- TEMPO in relation to isobornyl acrylate.
  • nanostructure film layer comprising:
  • the at least one population of nanostructures contains at least one shell.
  • the at least one anaerobic stabilizer is a nitroxide- containing compound or a nitroso-containing compound. In some embodiments, the at least one anaerobic stabilizer is a nitroxide- containing compound or a nitroso-containing compound. In some embodiments, the at least one anaerobic stabilizer is a nitroxide- containing compound or a nitroso-containing compound. In some embodiments, the at least one anaerobic stabilizer is a nitroxide- containing compound or a nitroso-containing compound. In some embodiments, the at least one anaerobic stabilizer is a nitroxide- containing compound or a nitroso-containing compound. In some embodiments, the at least one anaerobic stabilizer is a nitroxide- containing compound or a nitroso-containing compound. In some embodiments, the at least one anaerobic stabilizer is a nitroxide- containing compound or a
  • the at least one anaerobic stabilizer comprises a group.
  • the at least one anaerobic stabilizer is 4-hydroxy-2,2,6,6-tetramethyl-1-piperidinyloxy (4- hydroxy-TEMPO).
  • crystalline refers to the central core of the nanostructure (excluding the coating layers or shells).
  • crystalline or “substantially crystalline” as used herein are intended to also encompass structures comprising various defects, stacking faults, atomic substitutions, and the like, as long as the structure exhibits substantial long range ordering (e.g., order over at least about 80% of the length of at least one axis of the nanostructure or its core).
  • the heteroaryl is thienyl (e.g., thien-2-yl and thien-3-yl), furyl (e.g., 2-furyl and 3-furyl), pyrrolyl (e.g., 1H-pyrrol-2-yl and 1H-pyrrol- 3-yl), imidazolyl (e.g., 2H-imidazol-2-yl and 2H-imidazol-4-yl), pyrazolyl (e.g., 1H- pyrazol-3-yl, 1H-pyrazol-4-yl, and 1H-pyrazol-5-yl), pyridyl (e.g., pyridin-2-yl, pyridin- 3-yl, and pyridin-4-yl), pyrimidinyl (e.g., pyrimidin-2-yl, pyrimidin-4-yl, and pyrimidin- 5-yl), thiazolyl (e.g.,
  • the present disclosure provides a nanostructure composition comprising:
  • the nanostructure composition further comprises a ligand bound to the nanostructure.
  • the nanostructure is a quantum dot.
  • the nanostructure composition further comprises a ligand bound to the nanostructure.
  • the trace metal (including cadmium) concentration in the precursor materials for the Cd-free nanostructures can be measured by inductively coupled plasma mass spectroscopy (ICP-MS) analysis, and are on the parts per billion (ppb) level.
  • nanostructures that are "free of cadmium" contain less than about 50 ppm, less than about 20 ppm, less than about 10 ppm, or less than about 1 ppm of cadmium.
  • the dopant is ZnS, ZnSe, ZnTe, CdSe, CdS, CdTe, HgS, HgSe, HgTe, CuInS 2 , CuInSe 2 , AlN, AlP, AlAs, GaN, GaP, or GaAs.
  • the shell is a mixture of: zinc and sulfur; zinc and selenium; zinc, sulfur, and selenium; zinc and tellurium; zinc, tellurium, and sulfur; zinc, tellurium, and selenium; zinc, cadmium, and sulfur; zinc, cadmium, and selenium; cadmium and sulfur; cadmium and selenium; cadmium, selenium, and sulfur; cadmium and zinc; cadmium, zinc, and sulfur; cadmium, zinc, and selenium; or cadmium, zinc, sulfur, and selenium.
  • the shell is a mixture of zinc and selenium.
  • the shell is a mixture of zinc and sulfur.
  • the acrylate is a polyethylenglycol difunctional acrylate.
  • the methacacrylate is monofunctional.
  • the monofunctional methacrylate is isobornyl methacrylate, tetrahydrofurfuryl methacrylate, ethoxylated phenyl methacrylate, lauryl methacrylate, stearyl methacrylate, octyl methacrylate, isodecyl methacrylate, tridecyl methacrylate, caprolactone methacrylate, nonyl phenol methacrylate, cyclic trmethylolpropane formal methacrylate, methoxy polyethyleneglycol methacrylates, methoxy polypropyleneglycol methacrylates, hydroxyethyl methacrylate, hydroxypropyl methacrylate, or glycidyl methacrylate.
  • the methacrylate is an aliphatic or cycloaliphatic difunctional methacrylate such as 1,4-dihydroxymethylcyclohexane dimethacrylate, 2,2- bis(4-hydroxy-cyclohexyl)propane dimethacrylate, or bis(4-hydroxycyclohexyl)methane dimethacrylate.
  • the weight percentage of the reactive diluent in the nanostructure is between about 0.01% and about 99%, about 0.01% and about 95%, about 0.01% and about 90%, about 0.01% and about 80%, about 0.01% and about 70%, about 0.01% and about 60%, about 0.01% and about 50%, about 0.01% and about 25%, about 0.01% and about 20%, about 0.01% and about 15%, about 0.01% and about 10%, about 0.01% and about 5%, about 0.01% and about 2%, about 0.01% and about 1%, about 1% and about 99%, about 1% and about 95%, about 1% and about 90%, about 1% and about 80%, about 1% and about 70%, about 1% and about 60%, about 1% and about 50%, about 1% and about 25%, about 1% and about 20%, about 1% and about 15%, about 1% and about 10%, about 1% and about 5%, about 1% and about 2%, about 2% and about 99%, about 2% and about 95%
  • anaerobic stabilizer acts as an anaerobic radical scavenger to prevent the reactive diluent from uncontrolled polymerization during preparation and storage of a nanostructure composition.
  • the anaerobic stabilizer is a nitroxide-containing compound or a nitroso-containing compound. In some embodiments, the anaerobic
  • the solvent is selected from the group consisting of formic acid, acetic acid, chloroform, acetone, butanone, fatty alcohol and ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, diethylene glycol diethyl ether acetic acetate, methyl ethyl ketone, methyl isobutyl ketone, monomethyl ether glycol ester, gamma-butyrolactone, methylacetic-3-ethyl ether, butyl carbitol, butyl carbitol acetate, propanediol monomethyl ether, propanediol monomethyl ether acetate, cyclohexane, toluene, xylene, isopropyl alcohol, water, methanol, ethanol, acetonitrile, chlorobenzene, benzene, hexane
  • the nanostructure composition comprises at least one population of nanostructures, at least one reactive diluent, at least one anaerobic stabilizer, and at least one organic resin.
  • the nanostructure is a quantum dot.
  • the compositions are thermally cured to form the nanostructure layer. In some embodiments, the compositions are cured using UV light. In some embodiments, the nanostructure composition is coated directly onto a barrier layer of a nanostructure film, and an additional barrier layer is subsequently deposited upon the nanostructure layer to create the nanostructure film.
  • a support substrate can be employed beneath the barrier film for added strength, stability, and coating uniformity, and to prevent material inconsistency, air bubble formation, and wrinkling or folding of the barrier layer material or other materials. Additionally, one or more barrier layers are preferably deposited over a nanostructure layer to seal the material between the top and bottom barrier layers.
  • the matrix material of the nanostructure molded article and the one or more adjacent barrier layers have similar refractive indices, such that most of the light transmitting through the barrier layer toward the nanostructure molded article is transmitted from the barrier layer into the nanostructure layer.
  • Using materials with similar refractive indexes reduces optical losses at the interface between the barrier and matrix materials.
  • the nanostructure films are used to form display devices.
  • Green quantum dot concentrate (optical density: 30 ⁇ 35) in isobornyl acrylate with 200 ppm 4-hydroxy-TEMPO
  • Red quantum dot concentrate (optional density: 30 ⁇ 50) in isobornyl acrylate with 200 ppm 4-hydroxy-TEMPO
  • Sample G Isobornyl acrylate control without 4-hydroxy-TEMPO
  • samples A-D quantum dot concentrates in isobornyl acrylate with 200 ppm 4-hydroxy-TEMPO were prepared according to the methods described above in Example 1.
  • Samples E and F quantum dot concentrates in isobornyl acrylate without 4-hydroxy-TEMPO, were also prepared according to the methods described above in Example 1 without adding 4-hydroxy-TEMPO to isobornyl acrylate.
  • Sample G isobornyl acrylate without 4-hydroxy-TEMPO, was used as a control.
  • any of the foregoing device and/or processing components can be used in any suitable combination to form the QD film of the present disclosure.

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
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US10919770B2 (en) 2017-06-23 2021-02-16 Nanosys, Inc. Homogeneous anaerobically stable quantum dot concentrates
WO2020123021A2 (en) 2018-10-17 2020-06-18 The University Of Chicago Photosensitive, inorganic ligand-capped inorganic nanocrystals
WO2022054223A1 (ja) * 2020-09-11 2022-03-17 シャープ株式会社 発光素子

Citations (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5505928A (en) 1991-11-22 1996-04-09 The Regents Of University Of California Preparation of III-V semiconductor nanocrystals
US6207229B1 (en) 1997-11-13 2001-03-27 Massachusetts Institute Of Technology Highly luminescent color-selective materials and method of making thereof
US6225198B1 (en) 2000-02-04 2001-05-01 The Regents Of The University Of California Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process
US6306736B1 (en) 2000-02-04 2001-10-23 The Regents Of The University Of California Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process
US6509428B1 (en) 1998-10-06 2003-01-21 Atofina Radical polymerization in the presence of several stable free radicals
US6576291B2 (en) 2000-12-08 2003-06-10 Massachusetts Institute Of Technology Preparation of nanocrystallites
US6607829B1 (en) 1997-11-13 2003-08-19 Massachusetts Institute Of Technology Tellurium-containing nanocrystalline materials
US6788453B2 (en) 2002-05-15 2004-09-07 Yissum Research Development Company Of The Hebrew Univeristy Of Jerusalem Method for producing inorganic semiconductor nanocrystalline rods and their use
US6949206B2 (en) 2002-09-05 2005-09-27 Nanosys, Inc. Organic species that facilitate charge transfer to or from nanostructures
US7267875B2 (en) 2004-06-08 2007-09-11 Nanosys, Inc. Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same
WO2008027979A2 (en) * 2006-08-29 2008-03-06 3M Innovative Properties Company Resin systems including reactive surface-modified nanoparticles
US7374807B2 (en) 2004-01-15 2008-05-20 Nanosys, Inc. Nanocrystal doped matrixes
US20080237540A1 (en) 2007-03-19 2008-10-02 Nanosys, Inc. Methods for encapsulating nanocrystals
US20080281010A1 (en) 2007-04-11 2008-11-13 Ingenia Polymers Inc. Fine cell foamed polyolefin film or sheet
US7557028B1 (en) 2004-07-28 2009-07-07 Nanosys, Inc. Process for group III-V semiconductor nanostructure synthesis and compositions made using same
US7572393B2 (en) 2002-09-05 2009-08-11 Nanosys Inc. Organic species that facilitate charge transfer to or from nanostructures
WO2009152404A1 (en) * 2008-06-12 2009-12-17 3M Innovative Properties Company Methods of compounding nanoparticles with a resin
US7645397B2 (en) 2004-01-15 2010-01-12 Nanosys, Inc. Nanocrystal doped matrixes
US20100110728A1 (en) 2007-03-19 2010-05-06 Nanosys, Inc. Light-emitting diode (led) devices comprising nanocrystals
US8282412B1 (en) 2011-04-28 2012-10-09 Hitachi Cable, Ltd. Flat cable and connection structure between flat cable and printed wiring board
US20120262664A1 (en) * 2009-07-14 2012-10-18 Basf Coatings Gmbh Scratch-resistant-coated polycarbonates with high transparency, process for their production, and their use
WO2013028401A1 (en) * 2011-08-23 2013-02-28 3M Innovative Properties Company Addition-fragmentation agents
US8563133B2 (en) 2004-06-08 2013-10-22 Sandisk Corporation Compositions and methods for modulation of nanostructure energy levels
US20150236195A1 (en) 2012-07-02 2015-08-20 Nanosys, Inc. Highly luminescent nanostructures and methods of producing same

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8003169B2 (en) * 2002-04-19 2011-08-23 Basf Se Curing of coating induced by plasma
US7282272B2 (en) * 2003-09-12 2007-10-16 3M Innovative Properties Company Polymerizable compositions comprising nanoparticles
WO2010014205A1 (en) * 2008-07-28 2010-02-04 Qd Vision, Inc. Compositions, optical component, system including an optional component, devices, and other products
KR20090045913A (ko) * 2006-08-25 2009-05-08 닛산 가가쿠 고교 가부시키 가이샤 유기-지르코니아 복합 미립자를 포함하는 감광성 조성물
TW200900723A (en) * 2007-02-27 2009-01-01 3M Innovative Properties Co Brightness enhancing film comprising nanocomposite structure having improved crack resistance
CN102325719A (zh) * 2008-12-30 2012-01-18 3M创新有限公司 纳米结构化制品和制备纳米结构化制品的方法
US10550327B2 (en) * 2012-11-21 2020-02-04 Merck Patent Gmbh Polymerisable compounds and the use thereof in liquid-crystal displays
KR102279390B1 (ko) * 2013-07-24 2021-07-21 쓰리엠 이노베이티브 프로퍼티즈 컴파니 접착제 배리어 필름 구조물
US9708532B2 (en) * 2014-03-28 2017-07-18 Nanoco Technologies Ltd. Quantum dot compositions
KR102309892B1 (ko) * 2014-07-01 2021-10-06 삼성전자주식회사 조성물 및 그로부터 제조되는 폴리머 복합체
EP3221421B1 (en) * 2014-11-17 2019-06-26 3M Innovative Properties Company Quantum dot article with thiol-alkene matrix
US10233387B2 (en) * 2015-04-16 2019-03-19 3M Innovative Properties Company Quantum dot article with thiol-alkene-epoxy matrix
US10472563B2 (en) * 2017-02-16 2019-11-12 Rohm And Haas Electronic Materials Llc Methods for making improved quantum dot resin formulations
US10919770B2 (en) 2017-06-23 2021-02-16 Nanosys, Inc. Homogeneous anaerobically stable quantum dot concentrates

Patent Citations (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5505928A (en) 1991-11-22 1996-04-09 The Regents Of University Of California Preparation of III-V semiconductor nanocrystals
US20110263062A1 (en) 1997-11-13 2011-10-27 Massachusetts Institute Of Technology Highly Luminescent Color-Selective Nanocrystalline Materials
US7125605B2 (en) 1997-11-13 2006-10-24 Massachusetts Institute Of Technology Highly luminescent color-selective nanocrystalline materials
US7374824B2 (en) 1997-11-13 2008-05-20 Massachusetts Institute Of Technology Core-shell nanocrystallite comprising tellurium-containing nanocrystalline core and semiconductor shell
US6322901B1 (en) 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US8158193B2 (en) 1997-11-13 2012-04-17 Massachusetts Institute Of Technology Highly luminescent color-selective nanocrystalline materials
US20110262752A1 (en) 1997-11-13 2011-10-27 Massachusetts Institute Of Technology Highly Luminescent Color-Selective Nanocrystalline Materials
US6607829B1 (en) 1997-11-13 2003-08-19 Massachusetts Institute Of Technology Tellurium-containing nanocrystalline materials
US7566476B2 (en) 1997-11-13 2009-07-28 Massachusetts Institute Of Technology Highly luminescent color-selective nanocrystalline materials
US8101234B2 (en) 1997-11-13 2012-01-24 Massachusetts Institute Of Technology Highly luminescent color-selective nanocrystalline materials
US6861155B2 (en) 1997-11-13 2005-03-01 Massachusetts Institute Of Technology Highly luminescent color selective nanocrystalline materials
US6207229B1 (en) 1997-11-13 2001-03-27 Massachusetts Institute Of Technology Highly luminescent color-selective materials and method of making thereof
US7060243B2 (en) 1997-11-13 2006-06-13 Massachusetts Institute Of Technology Tellurium-containing nanocrystalline materials
US6509428B1 (en) 1998-10-06 2003-01-21 Atofina Radical polymerization in the presence of several stable free radicals
US6225198B1 (en) 2000-02-04 2001-05-01 The Regents Of The University Of California Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process
US6306736B1 (en) 2000-02-04 2001-10-23 The Regents Of The University Of California Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process
US7138098B2 (en) 2000-12-08 2006-11-21 Massachusetts Institute Of Technology Preparation of nanocrystallites
US6821337B2 (en) 2000-12-08 2004-11-23 Massachusetts Institute Of Technology Preparation of nanocrystallites
US6576291B2 (en) 2000-12-08 2003-06-10 Massachusetts Institute Of Technology Preparation of nanocrystallites
US6788453B2 (en) 2002-05-15 2004-09-07 Yissum Research Development Company Of The Hebrew Univeristy Of Jerusalem Method for producing inorganic semiconductor nanocrystalline rods and their use
US6949206B2 (en) 2002-09-05 2005-09-27 Nanosys, Inc. Organic species that facilitate charge transfer to or from nanostructures
US7572393B2 (en) 2002-09-05 2009-08-11 Nanosys Inc. Organic species that facilitate charge transfer to or from nanostructures
US7374807B2 (en) 2004-01-15 2008-05-20 Nanosys, Inc. Nanocrystal doped matrixes
US7645397B2 (en) 2004-01-15 2010-01-12 Nanosys, Inc. Nanocrystal doped matrixes
US7267875B2 (en) 2004-06-08 2007-09-11 Nanosys, Inc. Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same
US8563133B2 (en) 2004-06-08 2013-10-22 Sandisk Corporation Compositions and methods for modulation of nanostructure energy levels
US8062967B1 (en) 2004-07-28 2011-11-22 Nanosys, Inc. Process for group III-V semiconductor nanostructure synthesis and compositions made using same
US7557028B1 (en) 2004-07-28 2009-07-07 Nanosys, Inc. Process for group III-V semiconductor nanostructure synthesis and compositions made using same
WO2008027979A2 (en) * 2006-08-29 2008-03-06 3M Innovative Properties Company Resin systems including reactive surface-modified nanoparticles
US20100110728A1 (en) 2007-03-19 2010-05-06 Nanosys, Inc. Light-emitting diode (led) devices comprising nanocrystals
US20080237540A1 (en) 2007-03-19 2008-10-02 Nanosys, Inc. Methods for encapsulating nanocrystals
US20080281010A1 (en) 2007-04-11 2008-11-13 Ingenia Polymers Inc. Fine cell foamed polyolefin film or sheet
WO2009152404A1 (en) * 2008-06-12 2009-12-17 3M Innovative Properties Company Methods of compounding nanoparticles with a resin
US20120262664A1 (en) * 2009-07-14 2012-10-18 Basf Coatings Gmbh Scratch-resistant-coated polycarbonates with high transparency, process for their production, and their use
US8282412B1 (en) 2011-04-28 2012-10-09 Hitachi Cable, Ltd. Flat cable and connection structure between flat cable and printed wiring board
WO2013028401A1 (en) * 2011-08-23 2013-02-28 3M Innovative Properties Company Addition-fragmentation agents
US20150236195A1 (en) 2012-07-02 2015-08-20 Nanosys, Inc. Highly luminescent nanostructures and methods of producing same
US9169435B2 (en) 2012-07-02 2015-10-27 Nanosys, Inc. Highly luminescent nanostructures and methods of producing same

Non-Patent Citations (24)

* Cited by examiner, † Cited by third party
Title
BORCHERT, H. ET AL.: "Investigation of ZnS passivated InP nanocrystals by XPS", NANO LETTERS, vol. 2, 2002, pages 151 - 154, XP008141231, DOI: doi:10.1021/nl0156585
BOYLE, M.A. ET AL.: "ASM Handbook", vol. 21, 2001, article "Epoxy Resins,'' Composites", pages: 78 - 89
CROSGAGNEUX, A. ET AL.: "Surface chemistry of InP quantum dots: A comprehensive study", J. AM. CHEM. SOC., vol. 132, 2010, pages 18147 - 18157
D. BATTAGLIA; X. PENG: "Formation of high quality InP and InAs nanocrystals in a noncoordinating solvent", NANO LETTERS, vol. 2, 2002, pages 1027 - 1030
GUZELIAN, A.A. ET AL.: "Colloidal chemical synthesis and characterization of InAs nanocrystal quantum dots", APPL. PHYS. LETT., vol. 69, 1996, pages 1432 - 1434, XP000629145, DOI: doi:10.1063/1.117605
GUZELIAN, A.A. ET AL.: "Synthesis of size-selected, surface-passivated InP nanocrystals", J. PHYS. CHEM., vol. 100, 1996, pages 7212 - 7219
HAUBOLD, S. ET AL.: "Strongly luminescent InP/ZnS core-shell nanoparticles", CHEMPHYSCHEM., vol. 5, 2001, pages 331 - 334, XP003021606, DOI: doi:10.1002/1439-7641(20010518)2:5<331::AID-CPHC331>3.0.CO;2-0
HUSSAIN, S. ET AL.: "One-pot fabrication of high-quality InP/ZnS (core/shell) quantum dots and their application to cellular imaging", CHEMPHYSCHEM, vol. 10, 2009, pages 1466 - 1470, XP055004347, DOI: doi:10.1002/cphc.200900159
KIM, S. ET AL.: "Highly luminescent InP/GaP/ZnS nanocrystals and their application to white light-emitting diodes", J. AM. CHEM. SOC., vol. 134, 2012, pages 3804 - 3809, XP055332559, DOI: doi:10.1021/ja210211z
L. LI; P. REISS: "One-pot synthesis of highly luminescent InP/ZnS nanocrystals without precursor injection", J. AM. CHEM. SOC., vol. 130, 2008, pages 11588 - 11589, XP002637294, DOI: doi:10.1021/ja803687e
LI, L. ET AL.: "Economic synthesis of high quality InP nanocrystals using calcium phosphide as the phosphorus precursor", CHEM. MATER., vol. 20, 2008, pages 2621 - 2623
LIM, J. ET AL.: "InP@ZnSeS, core@composition gradient shell quantum dots with enhanced stability", CHEM. MATER., vol. 23, 2011, pages 4459 - 4463
LIU, Z. ET AL.: "Coreduction colloidal synthesis of III-V nanocrystals: The case of InP", ANGEW. CHEM. INT. ED. ENGL., vol. 47, 2008, pages 3540 - 3542
LUCEY, D.W. ET AL.: "Monodispersed InP quantum dots prepared by colloidal chemistry in a non-coordinating solvent", CHEM. MATER., vol. 17, 2005, pages 3754 - 3762
MICIC, O.I. ET AL.: "Core-shell quantum dots of lattice-matched ZnCdSe shells on InP cores: Experiment and theory", J. PHYS. CHEM. B, vol. 104, 2000, pages 12149 - 12156, XP002504286, DOI: doi:10.1021/JP0021502
MICIC, O.I. ET AL.: "Size-dependent spectroscopy of InP quantum dots", J. PHYS. CHEM. B, vol. 101, 1997, pages 4904 - 4912
MICIC, O.I. ET AL.: "Synthesis and characterization of InP, GaP, and GalnP quantum dots", J. PHYS. CHEM., vol. 99, 1995, pages 7754 - 7759
NANN, T. ET AL.: "Water splitting by visible light: A nanophotocathode for hydrogen production", ANGEW. CHEM. INT. ED., vol. 49, 2010, pages 1574 - 1577, XP002614911, DOI: doi:10.1002/ANIE.200906262
PRICE, S.C. ET AL.: "Formation of Ultra-Thin Quantum Dot Films by Mist Deposition", ESC TRANSACTIONS, vol. 11, 2007, pages 89 - 94, XP008133717, DOI: doi:10.1149/1.2783306
WELLS, R.L. ET AL.: "The use of tris(trimethylsilyl)arsine to prepare gallium arsenide and indium arsenide", CHEM. MATER., vol. 1, 1989, pages 4 - 6, XP055243392, DOI: doi:10.1021/cm00001a002
XIE, R. ET AL.: "Colloidal InP nanocrystals as efficient emitters covering blue to near-infrared", J. AM. CHEM. SOC., vol. 129, 2007, pages 15432 - 15433, XP002557200, DOI: doi:10.1021/ja076363h
XU, S. ET AL.: "Rapid synthesis of high-quality InP nanocrystals", J. AM. CHEM. SOC., vol. 128, 2006, pages 1054 - 1055, XP055467956, DOI: doi:10.1021/ja057676k
ZAN, F. ET AL.: "Experimental studies on blinking behavior of single InP/ZnS quantum dots: Effects of synthetic conditions and UV irradiation", J. PHYS. CHEM. C, vol. 116, 2012, pages 394 - 3950
ZIEGLER, J. ET AL., ADV. MATER., vol. 20, 2008, pages 4068 - 4073

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020015895A (ja) * 2018-07-13 2020-01-30 Dic株式会社 インク組成物、光変換層及びカラーフィルタ
JP7294864B2 (ja) 2018-07-13 2023-06-20 Dic株式会社 インク組成物、光変換層及びカラーフィルタ

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