WO2018233482A1 - 显示器件及包含它的显示装置 - Google Patents

显示器件及包含它的显示装置 Download PDF

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Publication number
WO2018233482A1
WO2018233482A1 PCT/CN2018/089895 CN2018089895W WO2018233482A1 WO 2018233482 A1 WO2018233482 A1 WO 2018233482A1 CN 2018089895 W CN2018089895 W CN 2018089895W WO 2018233482 A1 WO2018233482 A1 WO 2018233482A1
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Prior art keywords
layer
display device
hydrogen atom
substrate
pixel defining
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French (fr)
Inventor
万想
贾文斌
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Priority to US16/319,240 priority Critical patent/US10903290B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3035—Edge emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer

Definitions

  • the present disclosure relates to the field of display technologies, and in particular, to a display device and a display device.
  • OLED Organic Light-Emitting Diode
  • OLED Organic Light-Emitting Diode
  • a display lighting technology that has been developed in recent years. Especially in the display industry, it is one of the hotspots in the field of flat panel display research. Compared with liquid crystal displays, it has high response. High contrast, flexible, low power consumption, low production cost, self-illumination, wide viewing angle and fast response.
  • OLEDs in mobile phones, PDAs, digital cameras and other display fields have begun to replace traditional LCD screens. It is considered to have broad application prospects and has important research significance.
  • According to the light-emitting direction of the OLED device it can be divided into a bottom-emitting OLED device and a top-emitting OLED device.
  • the analytical analysis is a cause of white spots and the TFT channel materials indium gallium zinc oxide IGZO i.e. after reacting H atoms CVD i.e. chemical vapor deposition process and the like permeate produced by the particle path, generating OH - ions, OH - ions
  • the generation causes the mobility of the channel to increase, causing the threshold voltage Vth of the partial TFT to drift negatively, and the current is increased, resulting in local brightening and white spots.
  • a display device including:
  • a pixel defining layer formed on the transparent electrode, the pixel defining layer for defining a display area of each pixel and having an opening corresponding to the display area;
  • the hydrogen atom blocking material layer is an indium zinc oxide layer.
  • the indium zinc oxide layer has a thickness of 50 to 500 angstroms.
  • the pixel defining layer includes a hydrogen atom blocking material.
  • a display device including:
  • a pixel defining layer formed on the transparent electrode, the pixel defining layer for defining a display area of each pixel and having an opening corresponding to the display area;
  • the pixel defining layer comprises a hydrogen atom blocking material.
  • the resin layer is doped with a hydrogen atom blocking material.
  • a display device including:
  • a pixel defining layer formed on the transparent electrode, the pixel defining layer for defining a display area of each pixel and having an opening corresponding to the display area;
  • the hydrogen atom blocking material is a nano indium zinc oxide material or a C 60 material.
  • a TFT formed on the hydrogen atom blocking material layer is further included.
  • the display device is of a bottom emission type.
  • the light emitting layer is an organic light emitting layer.
  • a display device including any of the above display devices is disclosed.
  • FIG. 1 illustrates a schematic diagram of a display device in accordance with an example embodiment of the present disclosure.
  • FIG. 2 illustrates a schematic diagram of a display device in accordance with another example embodiment of the present disclosure.
  • Example embodiments will now be described more fully with reference to the accompanying drawings.
  • the example embodiments can be embodied in a variety of forms, and should not be construed as being limited to the examples set forth herein; the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
  • numerous specific details are set forth However, one skilled in the art will appreciate that one or more of the specific details may be omitted or other methods, components, devices, steps, etc. may be employed.
  • An object of the present disclosure is to provide a display device including: a substrate; a transparent electrode formed on the substrate; a pixel defining layer formed on the transparent electrode, the pixel defining layer for defining a display area of each pixel And having an opening corresponding to the display region; a light emitting layer formed on the pixel defining layer; a metal electrode formed on the light emitting layer; and a hydrogen atom blocking material layer formed on the metal electrode.
  • Another object of the present invention is to provide a display device including a substrate; a transparent electrode formed on the substrate; a pixel defining layer formed on the transparent electrode, the pixel defining layer for defining a display area of each pixel And having an opening corresponding to the display area; a light emitting layer formed on the pixel defining layer; and a metal electrode formed on the light emitting layer; wherein the pixel defining layer comprises a hydrogen atom blocking material.
  • Another object of the present invention is to provide a display device including a substrate; a resin layer formed between the substrate and the transparent electrode, wherein the resin layer is doped with a hydrogen atom blocking material; and formed on the substrate a transparent electrode; a pixel defining layer formed on the transparent electrode, the pixel defining layer for defining a display area of each pixel and having an opening corresponding to the display area; and a light emitting layer formed on the pixel defining layer And a metal electrode formed on the light-emitting layer.
  • the holes generated in the metal cathode film are improved, the path of the subsequent hydrogen atoms penetrating into the TFT is blocked, and the mobility of the channel due to the generation of OH - ions is reduced. The increase, thereby reducing the appearance of white spots and improving the optical quality of the display device.
  • a hydrogen atom blocking material such as a nano indium zinc oxide material or a C 60 material in the pixel defining layer to further reduce an increase in mobility of the channel due to generation of OH ⁇ ions, thereby reducing white spots.
  • a hydrogen atom blocking material such as a nano indium zinc oxide material or a C 60 material
  • a resin layer formed between the substrate and the transparent electrode to form an omnidirectional, multi-layer hydrogen atom blocking system
  • FIG. 1 shows a schematic view of a display device according to an example embodiment of the present disclosure
  • FIG. 2 shows a schematic view of a display device according to another example embodiment of the present disclosure.
  • FIG. 1 illustrates a schematic diagram of a display device in accordance with an example embodiment of the present disclosure.
  • the display device includes: a substrate 1; a transparent electrode 3 formed on the substrate; a pixel defining layer 4 formed on the transparent electrode, the pixel defining layer 4 for defining a display of each pixel a region having an opening corresponding to the display region; a light-emitting layer 5 formed on the pixel defining layer 4; a metal electrode 6 formed on the light-emitting layer 5; and hydrogen formed on the metal electrode 6.
  • the display device may further include a resin layer 2 formed between the substrate 1 and the transparent electrode 3 as needed, but the resin layer 2 is not essential.
  • the holes generated in the metal cathode film are improved, the path of the subsequent hydrogen atoms penetrating into the TFT is blocked, and the mobility of the channel due to the generation of OH - ions is reduced. The increase, thereby reducing the appearance of white spots and improving the optical quality of the display device.
  • the substrate 1 is usually a transparent glass substrate, or other inorganic transparent substrate, or may be an organic polymer transparent substrate;
  • the transparent electrode 3 is usually an indium tin oxide or ITO anode;
  • the metal electrode 6 is a cathode, usually an aluminum electrode, or It is an electrode such as silver.
  • the hydrogen atom blocking material layer 7 may be an indium oxide zinc, that is, an IZO layer or the like, and the hydrogen atom blocking material layer is formed in a specific manner after the metal Al electrode is formed, before the chemical vapor deposition, that is, before the CVD, by sputtering.
  • the sputtering method is to deposit an indium oxide zinc oxide film such as IZO, and the thickness of the film is 50-500 angstroms.
  • a hole which may be generated in the cathode Al film can be improved by depositing an indium oxide zinc film, i.e., an IZO or the like, to block a path in which a subsequent hydrogen atom penetrates into the TFT.
  • an indium oxide zinc film i.e., an IZO or the like
  • I.e., IZO, indium zinc oxide and similar oxides and hydrogen atoms can also be generated through the reaction of OH - ions, to prevent hydrogen penetration into the TFT.
  • the negative drift of the threshold voltage Vth of the TFT can be improved, the white spot condition of the display can be improved, and the optical quality of the display can be improved.
  • a hydrogen atom blocking material such as a nano indium zinc oxide material or a C 60 material is added to the layer to further reduce the appearance of white spots and improve the optical quality of the display device.
  • a certain proportion (1% to 10%) of indium zinc oxide, that is, IZO or the like oxide nano material or C 60 material is mixed into the pixel defining layer, that is, the PDL.
  • indium oxide zinc i.e., IZO or the like, can react an infiltrated hydrogen atom to form an OH - ion.
  • the negative drift of the threshold voltage Vth of the TFT can be further improved, the white spot condition of the display can be improved, and the optical quality of the display can be improved.
  • a resin layer formed between the substrate and the transparent electrode may be simultaneously added. Blocking material. In order to improve the white spot condition of the display and the optical quality of the display as much as possible.
  • the display device in the present exemplary embodiment includes: a substrate 1; a resin layer 2 formed on the substrate; a transparent electrode 3 formed on the resin layer 2; formed on the transparent electrode a pixel defining layer 4, the pixel defining layer 4 is for defining a display area of each pixel and having an opening corresponding to the display area; a light emitting layer 5 formed on the pixel defining layer 4; forming the light emitting layer a metal electrode 6 on the layer 5; and a hydrogen atom blocking material layer 7 formed on the metal electrode 6.
  • the hydrogen atom blocking material such as a nano indium zinc oxide material or a C 60 material added to the resin layer can be specifically carried out by the following embodiments:
  • indium oxide zinc i.e., IZO or the like, can react an infiltrated hydrogen atom to form an OH - ion.
  • the omnidirectional, multi-layer hydrogen atom blocking system constructed in combination with the above three embodiments can improve the negative drift of the threshold voltage Vth of the TFT as much as possible, and improve the white spot condition of the display and the display as much as possible. Optical quality.
  • the display device further includes a TFT layer 8 (shown in FIG. 2) formed on the hydrogen atom blocking material layer 7.
  • the display device is of a bottom emission type.
  • the light emitting layer is an organic light emitting layer.
  • a hydrogen atom blocking material layer on a metal electrode, holes generated in the metal cathode film are improved, and a path of subsequent hydrogen atoms penetrating into the TFT is blocked, thereby reducing increase the mobility of ion generation caused by the channel, thereby reducing the occurrence of white spots, improving the optical quality of the display device - OH.
  • a hydrogen atom blocking material such as a nano indium zinc oxide material or a C 60 material is added in a pixel defining layer to further reduce a mobility of a channel due to generation of OH ⁇ ions. Increase, thereby reducing the appearance of white spots and improving the optical quality of the display device.
  • a omnidirectional, multi-layered structure is formed by adding a hydrogen atom blocking material such as a nano indium zinc oxide material or a C 60 material to a resin layer formed between the substrate and the transparent electrode.
  • a hydrogen atom blocking material such as a nano indium zinc oxide material or a C 60 material
  • hydrogen barrier system to be reduced even further due to the OH - ions generated increase the mobility of the resulting channel.

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Abstract

本公开提供一种显示器件，包括：基板；形成在所述基板上的透明电极；形成在所述透明电极上的像素界定层，所述像素界定层用于界定各个像素的显示区域并具有与所述显示区域对应的开口；形成在所述像素界定层上的发光层；形成在所述发光层上的金属电极；以及形成在所述金属电极上的氢原子阻挡材料层。通过在金属电极上沉积氢原子阻挡材料层，改善金属阴极薄膜中可能产生的空穴，阻挡后续氢原子渗透到TFT中的路径，减小由于OH -离子的产生而导致的沟道的迁移率的增加，从而降低白斑的出现，改善显示器件的光学品质。

Description

显示器件及包含它的显示装置 技术领域
本公开涉及显示技术领域，具体而言，涉及一种显示器件及显示装置。
背景技术
OLED(Organic Light-Emitting Diode,有机发光二极管)是近年来逐渐发展起来的显示照明技术，尤其在显示行业，是当今平板显示器研究领域的热点之一，与液晶显示器相比，由于其具有高响应、高对比度、可柔性化、低能耗、生产成本低、自发光、宽视角及响应速度快等优点，目前，在手机、PDA、数码相机等显示领域OLED已经开始取代传统的LCD显示屏，被视为拥有广泛的应用前景，具有重要的研究意义。根据OLED器件的出光方向，可分为底发射OLED器件和顶发射OLED器件。
OLED显示中目前还存在很多光学问题，其中就包括显示屏出现白斑的问题。根据解析分析，导致白斑的原因之一是化学气相沉积即CVD过程中产生的H原子通过particle等路径渗透后和TFT沟道材料氧化铟镓锌即IGZO发生反应，生成OH -离子，OH -离子的产生使得沟道的迁移率增加，使得部分TFT的阈值电压V th发生负向漂移，电流增加，导致局部变亮，产生白斑。
因此，设计一种新的光色改善的显示器件是目前亟待解决的技术问题。
在所述背景技术部分公开的上述信息仅用于加强对本发明的背景的理解，因此它可以包括不构成对本领域普通技术人员已知的现有技术的信息。
发明内容
本公开的目的在于提供一种显示器件，进而至少在一定程度上克服由于相关技术的限制和缺陷而导致的一个或者多个问题。
本公开的其他特性和优点将通过下面的详细描述变得清晰，或者部分地通过本公开的实践而习得。
根据本公开的一示例性实施方式，公开一种显示器件，包括：
基板；
形成在所述基板上的透明电极；
形成在所述透明电极上的像素界定层，所述像素界定层用于界定各个像素的显示区域并具有与所述显示区域对应的开口；
形成在所述像素界定层上的发光层；
形成在所述发光层上的金属电极；以及
形成在所述金属电极上的氢原子阻挡材料层。
在本公开的一示例性实施方式中，所述氢原子阻挡材料层为氧化铟锌层。
在本公开的一示例性实施方式中，所述氧化铟锌层厚度为50-500埃。
在本公开的一示例性实施方式中，所述像素界定层包含氢原子阻挡材料。
根据本公开的一示例性实施方式，公开一种显示器件，包括：
基板；
形成在所述基板上的透明电极；
形成在所述透明电极上的像素界定层，所述像素界定层用于界定各个像素的显示区域并具有与所述显示区域对应的开口；
形成在所述像素界定层上的发光层；以及
形成在所述发光层上的金属电极；
其中，所述像素界定层包含氢原子阻挡材料。
在本公开的一示例性实施方式中，还包括形成在所述基板和所述透明电极之间的树脂层，所述树脂层中掺杂氢原子阻挡材料。
根据本公开的一示例性实施方式，公开一种显示器件，包括：
基板；
形成在所述基板和所述透明电极之间的树脂层，所述树脂层中掺杂氢原子阻挡材料；
形成在所述基板上的透明电极；
形成在所述透明电极上的像素界定层，所述像素界定层用于界定各个像素的显示区域并具有与所述显示区域对应的开口；
形成在所述像素界定层上的发光层；以及
形成在所述发光层上的金属电极。
在本公开的一示例性实施方式中，所述氢原子阻挡材料为纳米氧化铟锌材料或C 60材料。
在本公开的一示例性实施方式中，还包括形成在所述氢原子阻挡材料层上的TFT。
在本公开的一示例性实施方式中，所述显示器件为底发射型。
在本公开的一示例性实施方式中，所述发光层为有机发光层。
根据本公开的一示例性实施方式，公开一种显示器件，包括上述任一显示器件。
应当理解的是，以上的一般描述和后文的细节描述仅是示例性和解释性的，并不能限制本公开。
附图说明
通过参照附图详细描述其示例实施例，本发明的上述和其它目标、特征及优点将变得更加显而易见。
此处的附图被并入说明书中并构成本说明书的一部分，示出了符合本公开的实施例， 并与说明书一起用于解释本公开的原理。显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1示出根据本公开一示例实施方式的显示器件的示意图。
图2示出根据本公开另一示例实施方式的显示器件的示意图。
具体实施方式
现在将参考附图更全面地描述示例实施方式。然而，示例实施方式能够以多种形式实施，且不应被理解为限于在此阐述的范例；所描述的特征、结构或特性可以以任何合适的方式结合在一个或更多实施方式中。在下面的描述中，提供许多具体细节从而给出对本公开的实施方式的充分理解。然而，本领域技术人员将意识到，可以实践本公开的技术方案而省略所述特定细节中的一个或更多，或者可以采用其它的方法、组元、装置、步骤等。
需要指出的是，在附图中，为了图示的清晰可能会夸大层和区域的尺寸。而且可以理解，当元件或层被称为在另一元件或层“上”时，它可以直接在其他元件上，或者可以存在中间的层。另外，可以理解，当元件或层被称为在另一元件或层“下”时，它可以直接在其他元件下，或者可以存在一个以上的中间的层或元件。另外，还可以理解，当层或元件被称为在两层或两个元件“之间”时，它可以为两层或两个元件之间唯一的层，或还可以存在一个以上的中间层或元件。通篇相似的参考标记指示相似的元件。
本公开的目的在于提供一种显示器件，包括：基板；形成在所述基板上的透明电极；形成在所述透明电极上的像素界定层，所述像素界定层用于界定各个像素的显示区域并具有与所述显示区域对应的开口；形成在所述像素界定层上的发光层；形成在所述发光层上的金属电极；以及形成在所述金属电极上的氢原子阻挡材料层。
本发明的另一目的提供一种显示器件，包括基板；形成在所述基板上的透明电极；形成在所述透明电极上的像素界定层，所述像素界定层用于界定各个像素的显示区域并具有与所述显示区域对应的开口；形成在所述像素界定层上的发光层；以及形成在所述发光层上的金属电极；其中，所述像素界定层包含氢原子阻挡材料。
本发明的另一目的提供一种显示器件，包括基板；形成在所述基板和所述透明电极之间的树脂层，所述树脂层中掺杂氢原子阻挡材料；形成在所述基板上的透明电极；形成在所述透明电极上的像素界定层，所述像素界定层用于界定各个像素的显示区域并具有与所述显示区域对应的开口；形成在所述像素界定层上的发光层；以及形成在所述发光层上的金属电极。
通过在金属电极上沉积氢原子阻挡材料层，改善金属阴极薄膜中可能产生的空穴，阻挡后续氢原子渗透到TFT中的路径，减小由于OH -离子的产生而导致的沟道的迁移率的增加，从而降低白斑的出现，改善显示器件的光学品质。和/或通过在像素界定层中加入如纳米氧化铟锌材料或C 60材料等氢原子阻挡材料，以进一步减小由于OH -离子的产生而导 致的沟道的迁移率的增加，从而降低白斑的出现，改善显示器件的光学品质。和/或通过在形成在所述基板和所述透明电极之间的树脂层中加入如纳米氧化铟锌材料或C 60材料等氢原子阻挡材料，构成全方位、多层次的氢原子阻挡体系，从而更进一步地减小由于OH -离子的产生而导致的沟道的迁移率的增加。
下面结合附图对本公开的显示器件进行具体说明，其中，图1示出根据本公开一示例实施方式的显示器件的示意图；图2示出根据本公开另一示例实施方式的显示器件的示意图。
图1示出根据本公开一示例实施方式的显示器件的示意图。
如图1所示，显示器件包括：基板1；形成在所述基板上的透明电极3；形成在所述透明电极上的像素界定层4，所述像素界定层4用于界定各个像素的显示区域并具有与所述显示区域对应的开口；形成在所述像素界定层4上的发光层5；形成在所述发光层5上的金属电极6；以及形成在所述金属电极6上的氢原子阻挡材料层7。可选的，显示器件根据需要还可以包括形成在所述基板1和所述透明电极3之间的树脂层2，但所述树脂层2不是必需的。通过在金属电极上沉积氢原子阻挡材料层，改善金属阴极薄膜中可能产生的空穴，阻挡后续氢原子渗透到TFT中的路径，减小由于OH -离子的产生而导致的沟道的迁移率的增加，从而降低白斑的出现，改善显示器件的光学品质。
其中，基板1通常为透明玻璃基板，或者其他无机透明基板，也可以是有机聚合物透明基板；透明电极3通常为氧化铟锡即ITO阳极；金属电极6为阴极，通常为铝电极，也可以是银等电极。
氢原子阻挡材料层7可为氧化铟锌即IZO层等类似氧化物层，氢原子阻挡材料层的形成方式具体来说就是在做完金属Al电极之后、进行化学气相沉积即CVD前，通过溅射即sputter方式，沉积氧化铟锌即IZO等类似氧化物薄膜，薄膜的厚度50-500埃。
通过沉积氧化铟锌即IZO等类似氧化物薄膜可以改善阴极Al薄膜中可能产生的空穴(hole)，阻挡后续氢原子渗透到TFT中的路径。
氧化铟锌即IZO等类似氧化物也可以和经过的氢原子反应生成OH -离子，防止氢原子渗透到TFT中。
综上，可以改善TFT的阈值电压V th的负向漂移，改善显示器的白斑状况，改善显示器光学品质。
为了进一步阻挡后续氢原子渗透到TFT中的路径，进一步减小由于OH -离子的产生而导致的沟道的迁移率的增加，在本公开的又一种示例性实施例中，通过在像素界定层中加入如纳米氧化铟锌材料或C 60材料等氢原子阻挡材料，以进一步降低白斑的出现，改善显示器件的光学品质。
具体来说，通过在制备像素界定层即PDL时，向像素界定层即PDL中混入一定比例(1％～10％)的氧化铟锌即IZO等类似氧化物纳米材料或者C 60材料。
其中氧化铟锌即IZO等类似氧化物纳米材料可以将渗透的氢原子反应生成OH -离子。
而C 60材料可以吸收氢原子(C 60中存在的C＝C双键，可以吸收H原子)，防止氢原子渗透到TFT中。
综上，可以进一步改善TFT的阈值电压V th的负向漂移，改善显示器的白斑状况，改善显示器的光学品质。
为了构成全方位、多层次的氢原子阻挡体系，从而尽可能地阻挡后续氢原子渗透到TFT中的路径，尽可能地减小由于OH -离子的产生而导致的沟道的迁移率的增加，在本公开的另一种示例性实施例中，除了外，还可以同时在形成在所述基板和所述透明电极之间的树脂层中加入如纳米氧化铟锌材料或C 60材料等氢原子阻挡材料。以尽可能地改善显示器的白斑状况和显示器的光学品质。
再次参考图1，本示例性实施例中的显示器件包括：基板1；形成在所述基板上的树脂层2；形成在所述树脂层2上的透明电极3；形成在所述透明电极上的像素界定层4，所述像素界定层4用于界定各个像素的显示区域并具有与所述显示区域对应的开口；形成在所述像素界定层4上的发光层5；形成在所述发光层5上的金属电极6；以及形成在所述金属电极6上的氢原子阻挡材料层7。其中所述的在树脂层中加入如纳米氧化铟锌材料或C 60材料等氢原子阻挡材料具体可通过以下实施方式进行：
在制备树脂(Resin)层时，向树脂(Resin)中混入一定比例(1％～10％)的氧化铟锌即IZO等类似氧化物纳米材料或者C 60材料。
其中氧化铟锌即IZO等类似氧化物纳米材料可以将渗透的氢原子反应生成OH -离子。
而C 60材料可以吸收氢原子(C 60中存在的C＝C双键，可以吸收H原子)，防止氢原子渗透到TFT中。
综上，结合上述三种实施方式而构建的全方位、多层次的氢原子阻挡体系，可以尽可能地改善TFT的阈值电压V th的负向漂移，尽可能地改善显示器的白斑状况和显示器的光学品质。
在本公开的一示例性实施方式中，显示器件还包括形成在所述氢原子阻挡材料层7上的TFT层8(如图2所示)。
在本公开的一示例性实施方式中，所述显示器件为底发射型。
在本公开的一示例性实施方式中，所述发光层为有机发光层。
综上所述，根据本公开的一些实施方式，通过在金属电极上沉积氢原子阻挡材料层，改善金属阴极薄膜中可能产生的空穴，阻挡后续氢原子渗透到TFT中的路径，减小由于OH -离子的产生而导致的沟道的迁移率的增加，从而降低白斑的出现，改善显示器件的光学品质。
根据本公开的一些实施方式，通过在像素界定层中加入如纳米氧化铟锌材料或C 60材料等氢原子阻挡材料，以进一步减小由于OH -离子的产生而导致的沟道的迁移率的增加，从而降低白斑的出现，改善显示器件的光学品质。
根据本公开的一些实施方式，通过在形成在所述基板和所述透明电极之间的树脂层中 加入如纳米氧化铟锌材料或C 60材料等氢原子阻挡材料，构成全方位、多层次的氢原子阻挡体系，从而更进一步地减小由于OH -离子的产生而导致的沟道的迁移率的增加。
本领域技术人员在考虑说明书及实践这里公开的发明后，将容易想到本发明的其它实施方案。本申请旨在涵盖本发明的任何变型、用途或者适应性变化，这些变型、用途或者适应性变化遵循本发明的一般性原理并包括本发明未公开的本技术领域中的公知常识或惯用技术手段。说明书和实施例仅被视为示例性的，本发明的真正范围和精神由下面的权利要求指出。
应当理解的是，本发明并不局限于上面已经描述并在附图中示出的精确结构，并且可以在不脱离其范围进行各种修改和改变。本发明的范围仅由所附的权利要求来限制。

Claims (12)

  1. 一种显示器件，包括：
    基板；
    形成在所述基板上的透明电极；
    形成在所述透明电极上的像素界定层，所述像素界定层用于界定各个像素的显示区域并具有与所述显示区域对应的开口；
    形成在所述像素界定层上的发光层；
    形成在所述发光层上的金属电极；以及
    形成在所述金属电极上的氢原子阻挡材料层。
  2. 根据权利要求1所述的显示器件，其特征在于，所述氢原子阻挡材料层为氧化铟锌层。
  3. 根据权利要求2所述的显示器件，其特征在于，所述氧化铟锌层厚度为50-500埃。
  4. 根据权利要求1所述的显示器件，其特征在于，所述像素界定层包含氢原子阻挡材料。
  5. 一种显示器件，包括：
    基板；
    形成在所述基板上的透明电极；
    形成在所述透明电极上的像素界定层，所述像素界定层用于界定各个像素的显示区域并具有与所述显示区域对应的开口；
    形成在所述像素界定层上的发光层；以及
    形成在所述发光层上的金属电极；
    其中，所述像素界定层包含氢原子阻挡材料。
  6. 根据权利要求1、4或5所述的显示器件，其特征在于，还包括形成在所述基板和所述透明电极之间的树脂层，所述树脂层中掺杂氢原子阻挡材料。
  7. 一种显示器件，包括：
    基板；
    形成在所述基板和所述透明电极之间的树脂层，所述树脂层中掺杂氢原子阻挡材料；
    形成在所述基板上的透明电极；
    形成在所述透明电极上的像素界定层，所述像素界定层用于界定各个像素的显示区域并具有与所述显示区域对应的开口；
    形成在所述像素界定层上的发光层；以及
    形成在所述发光层上的金属电极。
  8. 根据权利要求4、5或7所述的显示器件，其特征在于，所述氢原子阻挡材料为纳米氧化铟锌材料或C60材料。
  9. 根据权利要求1、5或7所述的显示器件，其特征在于，还包括形成在所述氢原子 阻挡材料层上的薄膜晶体管。
  10. 根据权利要求1、5或7所述的显示器件，其特征在于，所述显示器件为底发射型。
  11. 根据权利要求1、5或7所述的显示器件，其特征在于，所述发光层为有机发光层。
  12. 一种显示装置，其特征在于，包括权利要求1-11任一所述的显示器件。
PCT/CN2018/089895 2017-06-19 2018-06-05 显示器件及包含它的显示装置 Ceased WO2018233482A1 (zh)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103887440A (zh) * 2012-12-21 2014-06-25 乐金显示有限公司 有机发光二极管显示器及其制造方法
CN103972267A (zh) * 2014-04-16 2014-08-06 京东方科技集团股份有限公司 一种有机发光显示装置
US20150014663A1 (en) * 2013-07-11 2015-01-15 Korea Institute Of Science And Technology Organic light emitting display apparatus and the method for manufacturing the same
CN104377306A (zh) * 2013-08-15 2015-02-25 索尼公司 显示单元和电子设备
CN107170790A (zh) * 2017-06-19 2017-09-15 京东方科技集团股份有限公司 光色改善的显示器件

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101699093B1 (ko) * 2010-07-27 2017-02-01 가부시키가이샤 제이올레드 유기 ｅｌ 표시 패널과 그 제조 방법
KR102082780B1 (ko) * 2013-01-10 2020-03-02 삼성디스플레이 주식회사 유기발광표시장치 및 그 제조방법
KR101588298B1 (ko) 2013-07-11 2016-02-12 한국과학기술연구원 유기 발광 표시 장치 및 이의 제조 방법
CN103730485B (zh) * 2013-12-27 2016-09-07 京东方科技集团股份有限公司 双面显示的oled阵列基板及其制备方法、显示装置
CN106597748A (zh) * 2017-01-03 2017-04-26 京东方科技集团股份有限公司 一种显示用基板、液晶显示面板及液晶显示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103887440A (zh) * 2012-12-21 2014-06-25 乐金显示有限公司 有机发光二极管显示器及其制造方法
US20150014663A1 (en) * 2013-07-11 2015-01-15 Korea Institute Of Science And Technology Organic light emitting display apparatus and the method for manufacturing the same
CN104377306A (zh) * 2013-08-15 2015-02-25 索尼公司 显示单元和电子设备
CN103972267A (zh) * 2014-04-16 2014-08-06 京东方科技集团股份有限公司 一种有机发光显示装置
CN107170790A (zh) * 2017-06-19 2017-09-15 京东方科技集团股份有限公司 光色改善的显示器件

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