WO2018233455A1 - Procédé et système de modulation de polarisation ainsi que dispositif de traitement au plasma - Google Patents

Procédé et système de modulation de polarisation ainsi que dispositif de traitement au plasma Download PDF

Info

Publication number
WO2018233455A1
WO2018233455A1 PCT/CN2018/088818 CN2018088818W WO2018233455A1 WO 2018233455 A1 WO2018233455 A1 WO 2018233455A1 CN 2018088818 W CN2018088818 W CN 2018088818W WO 2018233455 A1 WO2018233455 A1 WO 2018233455A1
Authority
WO
WIPO (PCT)
Prior art keywords
bias
voltage
source
time
pulse
Prior art date
Application number
PCT/CN2018/088818
Other languages
English (en)
Chinese (zh)
Inventor
苏恒毅
韦刚
Original Assignee
北京北方华创微电子装备有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 北京北方华创微电子装备有限公司 filed Critical 北京北方华创微电子装备有限公司
Publication of WO2018233455A1 publication Critical patent/WO2018233455A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3348—Problems associated with etching control of ion bombardment energy

Definitions

  • the present invention relates to the field of semiconductors, and in particular to a bias modulation method, a bias modulation system, and a plasma processing apparatus.
  • a plasma etching or deposition system by introducing various reaction gases (such as Cl2, SF6, C4F8, O2, etc.) into a vacuum reaction chamber, the reaction gas is completely dissociated by an external electromagnetic field (direct current or alternating current) to form a plasma. body.
  • the plasma contains a large amount of active particles of electrons, ions (including positive ions and negative ions), excited atoms, molecules, and radicals. These active particles interact with the surface of the wafer placed in the cavity and exposed to the plasma.
  • ICP Inductive Coupled Plasma Emission Spectrometer
  • FIG. 1 it is a schematic structural view of a typical ICP semiconductor etching apparatus.
  • a dielectric window 2 (quartz or ceramic) is disposed at the top of the vacuum chamber 3, and a planar RF antenna 1 is disposed above the dielectric window 2, and the RF energy output from the upper RF source 8 passes through the RF antenna 1 in the form of an induced discharge.
  • Energy is coupled into the vacuum chamber 3 to excite the reactive gases within the chamber to produce a high density plasma.
  • the plasma distributed in the vicinity of the dielectric window 2 is diffused from top to bottom to the surface of the wafer 4 for a specific process.
  • a typical lower electrode structure is provided in the vacuum chamber 3, which includes a stage 6, a metal electrode 5, and a bias RF source 7 and an impedance matching network electrically connected thereto.
  • the carrier 6 is used to carry the wafer 4; the metal electrode 5 is embedded in the carrier 6; the bias RF source 7 provides RF energy through the metal electrode 5 to generate a negative bias on the surface of the wafer, thereby controlling The ion energy bombarded to the surface of the wafer.
  • the bias RF source 7 supplies RF energy
  • positive ions accumulate on the surface of the wafer, generating a positive potential
  • the generated positive potential reduces the negative bias of the wafer surface.
  • the pressure which causes the attraction of positive ions in the plasma to be weakened, reduces the number and rate of positive ions reaching the surface of the wafer, thereby reducing the etching rate of the wafer surface, reducing the productivity, and possibly the workpiece to be processed. The condition that the surface cannot be adequately treated, thereby affecting the electrical properties of the workpiece.
  • the present invention is directed to the above technical problems existing in the prior art, and provides a bias modulation method, a bias modulation system, and a plasma processing apparatus, which can avoid a negative bias of a wafer surface during loading of a bias power to a susceptor.
  • the pressure is reduced, so that not only the plasma processing rate can be reduced, the productivity is ensured, but also the surface of the workpiece to be processed can be sufficiently processed to meet the electrical performance.
  • the invention provides a bias modulation method, comprising:
  • the difference between the target voltage value and the initial voltage value is equal to a negative bias loss value
  • the negative bias loss value is the bias RF during loading bias power to the susceptor
  • the loss value of the negative bias generated on the surface of the workpiece to be processed while the output voltage of the source maintains the initial voltage value
  • the bias power is applied to the susceptor according to a pulse period
  • the pulse period includes a pulse on time and a pulse off time
  • a bias power is applied to the pedestal while increasing an output voltage of the bias RF source such that the output voltage is The initial voltage value is increased to a target voltage value; at the pulse off time, loading of the bias power to the pedestal is stopped.
  • loading the pedestal power into the pedestal at the pulse-on time includes the following steps:
  • Step S102 detecting and recording a second bias voltage Vn generated on the surface of the workpiece to be processed at time tn of the current pulse-on time;
  • N is an integer
  • 1 ⁇ n ⁇ N is an integer
  • T1 is the length of the pulse on time
  • Step S103 calculating a difference V between the second bias voltage Vn and the third bias voltage V'n-1; wherein the third bias voltage V'n-1 is after the bias compensation is completed at the previous time The bias voltage generated on the surface of the workpiece to be processed; the third bias voltage V0' is equal to the first bias voltage V0;
  • Step S104 The output voltage of the bias RF source is adjusted in real time at the time tn of the current pulse-on time to the sum of the output voltage of the bias RF source and the difference V at time tn-1;
  • Step S105 detecting and recording a third bias voltage Vn' generated on the surface of the workpiece to be processed after the completion of the bias compensation;
  • Step S106 determining whether n is equal to N; if yes, the step ends; if not, replacing n with n+1, and sequentially performing steps S102 to S106.
  • the ratio of the initial voltage value to the target voltage value ranges from 0.1 to 0.9.
  • the output voltage of the biased RF source increases linearly during loading of the bias power to the susceptor.
  • the slope of the output voltage of the bias RF source increases linearly:
  • Vt is the target voltage value
  • Vs is the initial voltage value
  • T1 is the pulse turn-on time
  • the present invention also provides a bias modulation system, including:
  • Biasing a radio frequency source the bias RF source being electrically connected to a pedestal for carrying a workpiece to be processed for loading bias power to the susceptor;
  • a voltage adjustment module electrically connected to the bias RF source for increasing an output voltage of the bias RF source during loading of the bias RF source to the pedestal And increasing the output voltage from an initial voltage value to a target voltage value such that a negative bias voltage generated on a surface of the workpiece to be processed is maintained during loading bias power of the bias RF source to the susceptor In the preset range.
  • the bias RF source is a pulse modulated RF source to be capable of loading bias power to the pedestal in a pulse period;
  • the pulse period includes a pulse on time and a pulse off time, and at the pulse on time, the bias RF source loads a bias power to the pedestal while the voltage adjustment module increases an output of the bias RF source a voltage such that the output voltage is increased from an initial voltage value to a target voltage value; at the pulse off time, the biased RF source stops loading bias power to the pedestal.
  • the voltage adjustment module includes:
  • a clock generator capable of emitting a clock signal synchronized with the biased RF source
  • a voltage sensor in communication with the clock generator to detect a negative bias generated on a surface of the workpiece to be processed during the pulse turn-on time;
  • a digital processor in communication with the voltage sensor for receiving the negative bias voltage transmitted from the voltage sensor, and obtaining an output voltage adjustment value based on the negative bias voltage calculation, and The output voltage of the biased RF source is adjusted to the output voltage adjustment value such that a negative bias voltage generated on the surface of the workpiece to be processed is maintained at a preset value during loading of the bias power to the susceptor.
  • N is an integer
  • 1 ⁇ n ⁇ N is an integer
  • T1 is the length of the pulse on time
  • the output voltage of the bias RF source is the target voltage value; and detecting and recording the third bias voltage Vn generated on the surface of the workpiece to be processed after the completion of the bias compensation '.
  • the digital processor receives and records the first bias voltage V0, the second bias voltage Vn, and the third bias voltage Vn' sent by the voltage sensor, and executes:
  • the output voltage of the bias RF source is adjusted in real time at the time tn of the current pulse-on time to the sum of the output voltage of the biased RF source and the difference V at time tn-1;
  • n is equal to N; if yes, controlling the voltage sensor to stop detecting operation, and stopping adjusting an output voltage of the biased RF source; if not, controlling the voltage sensor to continue detecting operation, and adjusting the operation in real time The output voltage of the biased RF source.
  • the present invention also provides a plasma processing apparatus including: a susceptor for carrying a workpiece to be processed,
  • bias modulation system provided by the present invention, the bias modulation system being electrically coupled to the pedestal.
  • the output voltage of the bias RF source is increased to make the output voltage from the initial The voltage value is increased to the target voltage value. Since the output voltage of the bias RF source is gradually increased, the negative bias generated on the surface of the workpiece to be processed is gradually increased, and the amount of increase in the negative bias can be fully or partially compensated for being gradually accumulated on the surface of the workpiece to be processed.
  • the bias generated by the positive potential generated by the positive ions that is, although the positive potential reduces the negative bias of the wafer surface, the reduction of the negative bias is substantially the same as the increase of the negative bias, thereby Keeping the negative bias voltage within the preset range can not only avoid the plasma processing rate reduction, ensure the productivity, but also ensure that the surface of the workpiece to be processed can be fully processed to meet the electrical performance requirements.
  • FIG. 1 is a schematic structural view of an inductively coupled semiconductor etching apparatus in the prior art
  • FIG. 2 is a waveform diagram of a modulated pulse modulated RF source output according to an embodiment of the present invention
  • FIG. 3 is a schematic flow chart of a bias modulation method according to an embodiment of the present invention.
  • FIG. 4 is a waveform diagram of a modulated pulse modulated RF source output and an actual negative bias waveform of a corresponding wafer surface according to an embodiment of the present invention
  • FIG. 5 is a schematic diagram of a bias modulation system according to an embodiment of the present invention.
  • This embodiment provides a bias modulation method, including:
  • the output voltage of the bias RF source during loading of the bias power to the susceptor for carrying the workpiece to be processed, so that the output voltage is increased from the initial voltage value to the target voltage value so as to be on the surface of the workpiece to be processed
  • the resulting negative bias is maintained within a predetermined range during the loading of the bias power to the pedestal.
  • the so-called preset range refers to a range of fluctuations in the allowable bias power, which satisfies: maintaining a certain amount and rate of positive ions reaching the surface of the workpiece to be processed, thereby ensuring that the plasma processing rate is within a suitable process range.
  • the negative bias generated on the surface of the workpiece to be processed is gradually increased, and the amount of increase in the negative bias can partially or completely compensate for the positive accumulation on the surface of the workpiece to be processed.
  • a bias that is lost by the positive potential generated by the ions, that is, although the positive potential reduces the negative bias on the surface of the wafer the amount of decrease in the negative bias is substantially equal to the increase in the negative bias, thereby enabling
  • the negative bias voltage is kept within the preset range, thereby not only avoiding the plasma processing rate reduction, ensuring the productivity, but also ensuring that the surface of the workpiece to be processed can be sufficiently processed to meet the electrical performance requirements.
  • the difference between the target voltage value and the initial voltage value is equal to a negative bias loss value, and the output voltage of the biased RF source remains during the loading of the bias power for the pedestal.
  • the loss value of the negative bias generated on the surface of the workpiece to be processed when the initial voltage value is constant.
  • the negative bias that increases the surface of the workpiece to be processed just compensates for the bias that is lost due to the positive potential generated by the positive ions accumulated on the surface of the workpiece to be processed, thereby keeping the negative bias of the surface of the workpiece to be processed constant.
  • the initial voltage level can not only avoid the plasma processing rate reduction, ensure the production capacity, but also ensure that the surface of the workpiece to be processed can be fully processed to meet the electrical performance requirements.
  • the difference between the target voltage value and the initial voltage value may also be greater than or less than the above-mentioned negative bias loss value, as long as the negative bias voltage of the surface of the workpiece to be processed is kept within a preset range.
  • the bias RF source outputs a sinusoidal continuous wave.
  • the continuous wave plasma may cause damage to the device during the etching process.
  • a solution to this problem may be to apply bias power to the pedestal in a pulse period.
  • the pulse period includes a pulse on time and a pulse off time.
  • the bias power is applied to the pedestal, and the output voltage of the bias RF source is increased to increase the output voltage from the initial voltage value to the target voltage. Value; at the pulse off time, stop loading bias power to the pedestal.
  • the bias RF source is capable of loading bias power to the pedestal in a pulse period, such as a pulse modulated RF source.
  • the bias RF source is a pulse modulation RF source, wherein the pulse period T includes a pulse on time T1 and a pulse off time T2, and the output of the biased RF source is at the pulse on time T1.
  • the voltage is increased from the initial voltage value V1 to the target voltage value V2.
  • the bias power is applied to the susceptor during the pulse-on time, which specifically includes the following steps:
  • Step S102 detecting and recording a second bias voltage Vn generated on the surface of the workpiece to be processed at time tn of the current pulse-on time;
  • N is an integer
  • 1 ⁇ n ⁇ N is an integer
  • T1 is the length of the pulse on time
  • the output voltage of the bias RF source is the target voltage value.
  • Step S103 Calculating a difference V between the second bias voltage Vn and the first bias third bias voltage V'n-1.
  • Step S104 The output voltage of the biased RF source is adjusted in real time at the time tn of the current pulse-on time to the sum of the output voltage of the biased RF source and the difference V at time tn-1.
  • Step S105 detecting and recording the third bias voltage Vn' generated on the surface of the workpiece to be processed after the completion of the bias compensation.
  • Step S106 It is judged whether n is equal to N. If yes, the step ends. If not, n is replaced by n+1, and steps S102 to S106 are sequentially performed.
  • the actual voltage at the moment before the pulse is turned off is the target voltage at the last moment of the pulse-on time.
  • electrons enter the bottom of the etch tank, neutralizing the positive charge, and restoring the wafer surface bias to 0V.
  • the method of loading bias power to the susceptor according to the pulse period can realize real-time dynamic adjustment compensation of the bias voltage generated on the surface of the wafer during the process, so that the surface of the wafer reaches the compensation effect as shown in FIG. Among them, the larger the value of N, the better the compensation effect.
  • the detection and output voltage of the second bias voltage in each of the above cycles is increased from the initial voltage value to the target voltage value under the same process condition, that is, the detection and voltage increase process is at the same pulse turn-on time.
  • the same pulse power and pulse duty cycle, and the same initial voltage value are performed to ensure that the obtained bias of the surface loss of the workpiece to be processed is exactly equal to the compensation amount of the bias of the surface loss of the workpiece to be processed, thereby
  • the negative bias voltage on the surface of the machined workpiece is maintained at a constant initial voltage level, which not only avoids a reduction in the plasma processing rate, but also ensures the production capacity, and ensures that the surface of the workpiece to be processed can be sufficiently processed to meet the electrical performance requirements.
  • the output voltage of the biased RF source increases linearly.
  • the pulse waveform output from the bias RF source is a square wave
  • the positive charge accumulation on the workpiece to be processed has a substantially linear trend. Therefore, by linearly increasing the output voltage of the bias RF source, the linear increase can be correspondingly increased. The charge is cancelled so that a desired negative bias level is obtained on the workpiece to be processed.
  • the initial voltage value of the output voltage of the bias RF source is Vs
  • the target voltage value is Vt.
  • the slope of the output voltage of the biased RF source increases linearly:
  • Vt is the target voltage value
  • Vs is the initial voltage value
  • T1 is the pulse on time.
  • an inductively coupled plasma etching device that biases a RF source output pulse is a novel pulse-modulated RF source that can output a waveform as shown in FIG.
  • the pulse modulated RF source is used to apply a negative bias to the pedestal to create a negative bias on the surface of the wafer to be etched placed on the susceptor to attract plasma to the surface of the wafer to be etched.
  • the pulse modulation RF source output pulse frequency is 50 Hz
  • the duty ratio is 60%
  • the initial voltage value Vs is 300V.
  • the duty ratio of the pulse is set to 60%
  • the surface bias of the wafer to be etched during the pulse on and off phases is lowered from 300V to 200V, that is, the bias voltage is lost by 100V. Therefore, in order to compensate for the bias loss of the surface to be etched, the target voltage value Vt of the pulse-modulated RF source output should be increased to 400V to compensate for the above-mentioned loss of 100V bias voltage, that is, the initial voltage value of the pulse-modulated RF source output Vs.
  • the voltage ratio Vr to the target voltage value Vt is 0.75.
  • the pulse modulation waveform of the bias RF source output and the corresponding negative bias of the surface of the wafer to be etched are as shown in FIG. 4 .
  • the surface bias of the wafer to be etched is maintained at the initial voltage value Vs level, so that the negative bias voltage of the surface of the workpiece to be processed is maintained at a constant initial voltage level, thereby not only avoiding a decrease in plasma processing rate, but also ensuring throughput. It can be ensured that the surface of the workpiece to be processed can be fully treated to meet the electrical performance requirements.
  • the pulse off phase free electrons enter the etched trenches in the surface of the wafer to be etched and positive charges therein, causing the surface of the wafer to be etched to return to zero potential; It can be seen from FIG. 4 that during the pulse-on time, the pulse is modulated to solve the problem of the negative bias drop caused by the positive charge accumulation on the surface of the wafer to be etched, thereby maintaining the expected etch rate compared to the prior art. This in turn ensures the throughput of the wafer.
  • the pulse voltage of the output may also increase nonlinearly during the turn-on time T1 of the pulse.
  • the non-linearly increased voltage can correspondingly cancel the non-linearly increasing accumulated positive charge, thereby achieving a desired negative bias level on the wafer to be processed.
  • the ratio of the initial voltage value Vs to the target voltage value Vt ranges from 0.1 to 0.9. Adjusting the ratio of the initial voltage value Vs to the target voltage value Vt within this range can achieve appropriate compensation for the surface bias loss of the wafer to be processed, thereby enabling processing of the wafer to be processed according to different processing target requirements of the wafer to be processed. Regulation is carried out to achieve precise control of wafer processing rate, improve wafer processing quality, and ensure wafer throughput.
  • the RF frequency of the pulse modulation RF source is 2MHz, 13.56MHz or 60MHz.
  • the bias modulation method in this embodiment is applicable not only to an inductively coupled plasma processing (ICP) but also to a capacitively coupled plasma processing (CCP), a microwave plasma processing, and a microwave electron cyclotron resonance plasma processing (ECR). ).
  • the output voltage of the bias RF source is increased. So that the output voltage is increased from the initial voltage value to the target voltage value. Since the output voltage of the bias RF source is gradually increased, the negative bias generated on the surface of the workpiece to be processed is gradually increased, and the amount of increase in the negative bias can be fully or partially compensated for being gradually accumulated on the surface of the workpiece to be processed.
  • the bias generated by the positive potential generated by the positive ions that is, although the positive potential reduces the negative bias of the wafer surface, the reduction of the negative bias is substantially the same as the increase of the negative bias, thereby Keeping the negative bias voltage within the preset range can not only avoid the plasma processing rate reduction, ensure the productivity, but also ensure that the surface of the workpiece to be processed can be fully processed to meet the electrical performance requirements.
  • the present embodiment provides a bias modulation system, as shown in FIG. 5, for modulating a negative bias voltage of a workpiece to be processed placed on the surface of the susceptor 10.
  • the bias modulation system includes a bias RF source 7 and a voltage adjustment module, wherein the bias RF source 7 is electrically coupled to a susceptor 10 for carrying a workpiece to be processed for loading bias power to the susceptor 10 such that The surface of the workpiece to be machined produces a negative bias.
  • the voltage adjustment module 9 is electrically connected to the bias RF source 7 for increasing the output voltage of the bias RF source during the biasing of the RF source to apply bias power to the pedestal to increase the output voltage from the initial voltage value. To the target voltage value, such that the negative bias generated on the surface of the workpiece to be processed is maintained within a preset range during the biasing of the bias RF source to the susceptor.
  • the negative bias generated on the surface of the workpiece to be processed can be gradually increased, and the increase of the negative bias can fully or partially compensate the positive potential generated by the positive ions gradually accumulated on the surface of the workpiece to be processed.
  • the loss of the bias voltage that is, although the positive potential reduces the negative bias of the wafer surface, the reduction of the negative bias is substantially the same as the increase of the negative bias, so that the negative bias can be maintained at Within the preset range, not only can the plasma processing rate be reduced, the production capacity can be ensured, but also the surface of the workpiece to be processed can be sufficiently processed to meet the electrical performance requirements.
  • the workpiece to be processed is the wafer 4 to be processed.
  • the voltage adjustment module 9 includes a clock generator 91, a voltage sensor 92, and a digital processor 93, wherein the clock generator 91 is capable of emitting a clock signal synchronized with the biased RF source.
  • the voltage sensor 92 is in communication with the clock generator 91 to be able to detect a negative bias generated on the surface of the workpiece to be processed during the pulse-on time.
  • the digital processor 93 is in communication with the voltage sensor 92 for receiving a negative bias voltage transmitted from the voltage sensor 92, and obtaining an output voltage adjustment value based on the negative bias voltage, and adjusting the output voltage of the bias RF source to an output voltage. The value is adjusted such that the negative bias generated on the surface of the workpiece to be machined is maintained at a preset value during the loading of the bias power to the susceptor.
  • N is an integer
  • 1 ⁇ n ⁇ N is an integer
  • T1 is the length of the pulse on time
  • the output voltage of the bias RF source is the target voltage value; and the third bias voltage Vn' generated on the surface of the workpiece to be processed after the completion of the bias compensation is detected and recorded.
  • the digital processor 93 receives and records the first bias voltage V0, the second bias voltage Vn, and the third bias voltage Vn' transmitted from the voltage sensor 92, and executes:
  • the digital processor 93 adjusts the output voltage of the biased RF source at the time tn of the current pulse-on time to the sum of the output voltage of the biased RF source and the difference V at tn-1.
  • the digital processor 93 determines whether n is equal to N, and if so, instructs the voltage sensor 92 to stop the detecting operation, and stops adjusting the output voltage of the biased RF source; if not, the control voltage sensor 82 continues to detect the operation, and adjusts in real time. The output voltage of the biased RF source.
  • the clock generator 91 is used to generate a square wave pulse, and the pulse period of the square wave pulse is T1/N.
  • the bias RF source 7 is a novel pulse modulated RF source that can output a waveform as shown in FIG.
  • the square wave pulse generated by the clock generator 91 is input to the voltage sensor 92.
  • N is an integer greater than 0, in order to ensure the timeliness and effectiveness of voltage compensation, generally N ⁇ 100, the larger the N value, the better the compensation effect.
  • the voltage sensor 92 is responsible for detecting the first bias voltage and the second bias voltage on the surface of the wafer 4, and the timing of detecting is controlled by a square wave pulse outputted by the clock generator 91, and can be set as a pulse rising edge or a falling edge triggering detection action.
  • n is the count value of the square wave pulse of the clock generator 91.
  • the digital processor 93 is responsible for receiving, recording and calculating the detected data of the voltage sensor 92, and the result of the operation is fed back to the bias RF source 7, so that the bias RF source 7 can adjust the output pulse voltage in real time according to the feedback result.
  • the specific process of loading the bias power to the susceptor by the pulse period in the voltage adjustment module 9 is: the bias RF source 7 and the clock generator 92 simultaneously output pulses, assuming the bias RF source 7
  • n is an integer greater than 0, the initial value is 1, and the value of n can be changed and stored in the digital processor 93.
  • the second bias voltage V1 is sent to the digital processor 93.
  • the voltage output from the bias voltage source 7 at the moment before the pulse is turned off is the target voltage at the last moment of the pulse on time. After the pulse is turned off, electrons enter the bottom of the etched tank, neutralizing the positive charge, and the wafer 4 is biased back to 0V.
  • the RF pulse modulation system can realize real-time dynamic compensation of the surface bias of the wafer 4 during the process, and achieve the compensation effect as shown in FIG.
  • the negative bias generated on the surface of the workpiece to be processed can be gradually increased, and the increase of the negative bias can be fully or partially compensated due to the gradual accumulation.
  • the bias voltage lost by the positive potential generated by the positive ions on the surface of the workpiece, that is, although the positive potential reduces the negative bias of the wafer surface, the reduction of the negative bias and the increase of the negative bias are basically It is flat, so that the negative bias can be kept within the preset range, thereby not only avoiding the plasma processing rate reduction, ensuring the productivity, but also ensuring that the surface of the workpiece to be processed can be sufficiently processed to meet the electrical performance.
  • the present embodiment provides a plasma processing apparatus including a susceptor for carrying a workpiece to be processed, and the bias modulation system of the above-described Embodiment 2, the bias modulation system being electrically connected to the susceptor.
  • the plasma processing apparatus further comprises a plasma generating device comprising a coil and an upper electrode radio frequency source connected to the coil, the upper electrode radio frequency source being a continuous wave radio frequency source or a pulse modulation radio frequency source.
  • the negative bias generated on the surface of the workpiece to be processed can be gradually increased, and the amount of increase in the negative bias can be fully or partially compensated for gradually accumulating to the surface of the workpiece to be processed.
  • the positive ion generated by the positive ion and the bias voltage lost that is, although the positive potential reduces the negative bias of the wafer surface, the reduction of the negative bias is substantially the same as the increase of the negative bias, thereby
  • the negative bias voltage can be kept within the preset range, thereby not only avoiding the plasma processing rate reduction, ensuring the productivity, but also ensuring that the surface of the workpiece to be processed can be sufficiently processed to meet the electrical performance. .
  • the bias modulation method, the bias modulation system, and the plasma processing apparatus including the same are not limited to inductively coupled plasma generation, negative bias occurring in capacitively coupled plasma generation.
  • the problem of pressure loss, the above-described inductively coupled plasma or capacitively coupled plasma generation is merely illustrative of specific embodiments of the invention and is not intended to limit the invention.
  • the bias modulation method of the present invention can be employed, and the bias modulation system and the plasma processing apparatus solve the technical problems.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Abstract

La présente invention concerne un procédé et un système de modulation de polarisation ainsi qu'un dispositif de traitement au plasma. Le procédé de modulation de polarisation consiste à : pendant la charge d'une puissance de polarisation sur une base servant à supporter une pièce à usiner, augmenter une tension de sortie d'une source radiofréquence de polarisation, de sorte que la tension de sortie augmente d'une valeur de tension initiale à une valeur de tension cible, et de sorte qu'une polarisation négative produite sur une surface de la pièce à usiner soit maintenue dans une plage prédéfinie pendant la charge de la puissance de polarisation sur la base. L'invention concerne également un système de modulation de polarisation. Le dispositif de traitement au plasma selon l'invention comprend un système de modulation de polarisation selon la présente invention. Le procédé et le système de modulation de polarisation ainsi que le dispositif de traitement au plasma permettent tous d'empêcher le cas d'une polarisation négative apparaissant sur la surface d'une tranche diminuant pendant la charge d'une puissance de polarisation sur une base, de façon à non seulement pouvoir éviter la diminution de la vitesse de traitement au plasma et à garantir la productivité, mais également à pouvoir garantir un traitement suffisant de la surface d'une pièce à usiner, ce qui permet à sa performance électrique de satisfaire des exigences.
PCT/CN2018/088818 2017-06-23 2018-05-29 Procédé et système de modulation de polarisation ainsi que dispositif de traitement au plasma WO2018233455A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710486330.XA CN109119317B (zh) 2017-06-23 2017-06-23 一种偏压调制方法、偏压调制系统和等离子体处理设备
CN201710486330.X 2017-06-23

Publications (1)

Publication Number Publication Date
WO2018233455A1 true WO2018233455A1 (fr) 2018-12-27

Family

ID=64732129

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/088818 WO2018233455A1 (fr) 2017-06-23 2018-05-29 Procédé et système de modulation de polarisation ainsi que dispositif de traitement au plasma

Country Status (3)

Country Link
CN (1) CN109119317B (fr)
TW (1) TWI715842B (fr)
WO (1) WO2018233455A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110752135B (zh) * 2019-10-31 2022-05-27 北京北方华创微电子装备有限公司 射频偏压调节方法、装置及等离子体刻蚀设备
CN112530773B (zh) * 2020-11-27 2023-11-14 北京北方华创微电子装备有限公司 半导体工艺设备
CN113604788B (zh) * 2021-07-27 2022-10-21 北京北方华创微电子装备有限公司 基座偏压调节装置和方法、半导体工艺设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102983099A (zh) * 2011-09-07 2013-03-20 中国科学院微电子研究所 半导体集成电路制造方法
CN105070627A (zh) * 2015-07-15 2015-11-18 大连理工大学 一种减少基片材料受高能离子轰击损伤的方法
US20160172216A1 (en) * 2014-12-15 2016-06-16 Lam Research Corporation Ion Energy Control By RF Pulse Shape

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102983099A (zh) * 2011-09-07 2013-03-20 中国科学院微电子研究所 半导体集成电路制造方法
US20160172216A1 (en) * 2014-12-15 2016-06-16 Lam Research Corporation Ion Energy Control By RF Pulse Shape
CN105070627A (zh) * 2015-07-15 2015-11-18 大连理工大学 一种减少基片材料受高能离子轰击损伤的方法

Also Published As

Publication number Publication date
TWI715842B (zh) 2021-01-11
TW201911363A (zh) 2019-03-16
CN109119317B (zh) 2020-11-10
CN109119317A (zh) 2019-01-01

Similar Documents

Publication Publication Date Title
US11742182B2 (en) Control method and plasma processing apparatus
US20200411286A1 (en) Control method and plasma processing apparatus
US11521866B2 (en) Plasma processing method, plasma processing apparatus and method of manufacturing semiconductor device using the apparatus
US11764082B2 (en) Control method and plasma processing apparatus
US9805916B2 (en) Plasma processing apparatus
CN111029238A (zh) 等离子体处理装置和控制方法
JPWO2017126184A1 (ja) プラズマ処理方法およびプラズマ処理装置
TWI603368B (zh) Plasma processing apparatus and plasma processing method
US9966291B2 (en) De-chuck control method and plasma processing apparatus
KR20200083330A (ko) 플라즈마 처리 장치 및 제어 방법
US10410874B2 (en) Plasma processing apparatus and method, and method of manufacturing semiconductor device using the same
KR102311566B1 (ko) 플라즈마 처리 장치 및 제어 방법
WO2018233455A1 (fr) Procédé et système de modulation de polarisation ainsi que dispositif de traitement au plasma
JP2023550467A (ja) 半導体プロセス装置及び電力制御方法
WO2022271383A1 (fr) Source de tension pulsée pour applications de traitement au plasma
CN114207785A (zh) 用于处理基板的方法与设备
US20240047195A1 (en) Delayed pulsing for plasma processing of wafers
KR20240017919A (ko) 펄스식 dc 플라즈마 챔버에서의 플라즈마 균일성 제어
US20170186591A1 (en) Cleaning method of plasma processing apparatus and plasma processing apparatus
TWI835163B (zh) 用於基板處理的脈衝電壓增壓
CN110752135B (zh) 射频偏压调节方法、装置及等离子体刻蚀设备
US20230170194A1 (en) Ion energy control on electrodes in a plasma reactor
US11996271B2 (en) Plasma processing apparatus
US20230071168A1 (en) Method and apparatus for digital control of ion energy distribution in a plasma
KR20240090877A (ko) 플라즈마 반응기 내의 전극들에 대한 이온 에너지 제어

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18820584

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18820584

Country of ref document: EP

Kind code of ref document: A1