TWI715842B - 偏壓調製方法、偏壓調製系統和電漿處理裝置 - Google Patents

偏壓調製方法、偏壓調製系統和電漿處理裝置 Download PDF

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Publication number
TWI715842B
TWI715842B TW107118360A TW107118360A TWI715842B TW I715842 B TWI715842 B TW I715842B TW 107118360 A TW107118360 A TW 107118360A TW 107118360 A TW107118360 A TW 107118360A TW I715842 B TWI715842 B TW I715842B
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TW
Taiwan
Prior art keywords
bias
voltage
pulse
radio frequency
bias voltage
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TW107118360A
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English (en)
Chinese (zh)
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TW201911363A (zh
Inventor
蘇恒毅
韋剛
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大陸商北京北方華創微電子裝備有限公司
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Publication of TW201911363A publication Critical patent/TW201911363A/zh
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Publication of TWI715842B publication Critical patent/TWI715842B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3348—Problems associated with etching control of ion bombardment energy

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW107118360A 2017-06-23 2018-05-29 偏壓調製方法、偏壓調製系統和電漿處理裝置 TWI715842B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
??201710486330.X 2017-06-23
CN201710486330.XA CN109119317B (zh) 2017-06-23 2017-06-23 一种偏压调制方法、偏压调制系统和等离子体处理设备
CN201710486330.X 2017-06-23

Publications (2)

Publication Number Publication Date
TW201911363A TW201911363A (zh) 2019-03-16
TWI715842B true TWI715842B (zh) 2021-01-11

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ID=64732129

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107118360A TWI715842B (zh) 2017-06-23 2018-05-29 偏壓調製方法、偏壓調製系統和電漿處理裝置

Country Status (3)

Country Link
CN (1) CN109119317B (fr)
TW (1) TWI715842B (fr)
WO (1) WO2018233455A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110752135B (zh) * 2019-10-31 2022-05-27 北京北方华创微电子装备有限公司 射频偏压调节方法、装置及等离子体刻蚀设备
CN112530773B (zh) * 2020-11-27 2023-11-14 北京北方华创微电子装备有限公司 半导体工艺设备
CN113604788B (zh) * 2021-07-27 2022-10-21 北京北方华创微电子装备有限公司 基座偏压调节装置和方法、半导体工艺设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102983099A (zh) * 2011-09-07 2013-03-20 中国科学院微电子研究所 半导体集成电路制造方法
CN105070627A (zh) * 2015-07-15 2015-11-18 大连理工大学 一种减少基片材料受高能离子轰击损伤的方法
US20160172216A1 (en) * 2014-12-15 2016-06-16 Lam Research Corporation Ion Energy Control By RF Pulse Shape

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102983099A (zh) * 2011-09-07 2013-03-20 中国科学院微电子研究所 半导体集成电路制造方法
US20160172216A1 (en) * 2014-12-15 2016-06-16 Lam Research Corporation Ion Energy Control By RF Pulse Shape
TW201643956A (zh) * 2014-12-15 2016-12-16 蘭姆研究公司 藉由射頻脈波形狀之離子能量控制
CN105070627A (zh) * 2015-07-15 2015-11-18 大连理工大学 一种减少基片材料受高能离子轰击损伤的方法

Also Published As

Publication number Publication date
TW201911363A (zh) 2019-03-16
CN109119317B (zh) 2020-11-10
CN109119317A (zh) 2019-01-01
WO2018233455A1 (fr) 2018-12-27

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