WO2018233192A1 - 一种下电极机构及反应腔室 - Google Patents

一种下电极机构及反应腔室 Download PDF

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Publication number
WO2018233192A1
WO2018233192A1 PCT/CN2017/111125 CN2017111125W WO2018233192A1 WO 2018233192 A1 WO2018233192 A1 WO 2018233192A1 CN 2017111125 W CN2017111125 W CN 2017111125W WO 2018233192 A1 WO2018233192 A1 WO 2018233192A1
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WO
WIPO (PCT)
Prior art keywords
lower electrode
hole
lead
cavity
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/111125
Other languages
English (en)
French (fr)
Inventor
黄亚辉
韦刚
李一成
茅兴飞
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Naura Microelectronics Equipment Co Ltd
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Priority to US16/624,246 priority Critical patent/US11410833B2/en
Priority to KR1020197029811A priority patent/KR102166661B1/ko
Priority to JP2019570121A priority patent/JP6914374B2/ja
Priority to SG11201912467XA priority patent/SG11201912467XA/en
Publication of WO2018233192A1 publication Critical patent/WO2018233192A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H01J2237/0266—Shields electromagnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Definitions

  • the present disclosure relates to the field of microelectronics, and in particular to a lower electrode mechanism and a reaction chamber.
  • ICP Inductive Coupled Plasma
  • the existing ICP device mainly comprises an air inlet mechanism, an upper electrode mechanism, and a lower electrode mechanism, wherein the air inlet mechanism is used for conveying a process gas into the reaction chamber; the upper electrode mechanism is used to excite the process gas to form a plasma; and the lower electrode mechanism It is used to carry the workpiece to be processed, and the RF bias is applied to the workpiece to attract the plasma to etch the surface of the workpiece.
  • the lower electrode mechanism includes a base for carrying the workpiece to be processed, and the base may be an electrostatic chuck. Moreover, a lower electrode cavity is disposed under the pedestal, and the cavity of the lower electrode cavity and the cavity sidewall of the reaction chamber form an introduction channel communicating with the outside, and the conductive components of different functions enter the lower electrode cavity through the introduction channel. Inside, and introduced to the bottom of the base through a mounting plate disposed at the bottom of the base, and electrically connected to the base.
  • the conductive member usually includes a radio frequency connection post, a heating wire, and an electrostatic adsorption wire.
  • the outer end of the radio frequency connection column is connected with a radio frequency source (matcher and radio frequency power source), and the inner end of the radio frequency connection post runs through the installation tray from bottom to top and is electrically connected to the base.
  • a radio frequency source matcher and radio frequency power source
  • the inner end of the radio frequency connection post runs through the installation tray from bottom to top and is electrically connected to the base.
  • the outer ends of the heating wire and the electrostatic adsorption wire are respectively connected to an alternating current power source and a direct current power source, and the inner end penetrates the mounting plate from bottom to top, and is connected with the heating element in the base.
  • the DC electrode is electrically conductive.
  • a cooling line for introducing cooling water into the cooling duct in the base is provided in the lower electrode chamber, and a back-blowing line for blowing back gas into the back-blowing duct in the base is used for detecting the base.
  • the radio frequency connection column and the other metal parts have mutual interference, which causes the uniformity of the electric field to be affected;
  • the radio frequency connecting post, the mounting plate and the base are all conductive materials, and the three are mutually Conduction causes RF leakage, which affects RF stability.
  • a lower electrode mechanism including: a base for carrying a workpiece to be processed; and a lower electrode cavity disposed under the base, including: an electromagnetic shielding space and a non-electromagnetic isolation a shielding space, the cavity of the lower electrode cavity is provided with a first through hole and a second through hole, and the electromagnetic shielding space and the non-electromagnetic shielding space are respectively communicated with the outside through the first through hole and the second through hole.
  • a first component in the electromagnetic shielding space is prevented from being disturbed by a second component from the non-electromagnetic shielding space.
  • the cavity of the lower electrode cavity includes a cavity body, a first extension portion is formed at one side of the cavity body, and a horizontal setting is formed in the first extension portion a first through hole and a second through hole.
  • a second extension is formed on the other side of the cavity body opposite the first extension, the second extension being opposite the first extension
  • the susceptor is symmetrical about a center line in the radial direction.
  • the lower electrode mechanism further includes a first shielding module, the first shielding module is disposed at an inner end of the first through hole communicating with the lower electrode cavity, and Between the pedestals, and located in the lower electrode cavity to form a first electromagnetic shielding cavity, the first electromagnetic shielding cavity is the electromagnetic shielding space; the first electromagnetic cavity is located in the first electromagnetic The space outside the shielding cavity is the non-electromagnetic shielding space.
  • the first shielding module includes: a shielding sleeve having an arc shape, one end of which is disposed under the base, and the other end of which is in communication with the first through hole, Thereby forming the first electromagnetic shielding cavity.
  • the susceptor includes a susceptor body and an insulating disk disposed in order from top to bottom; the lower electrode mechanism further includes a lead-in assembly, the lead-in assembly including a first lead-in point that is sequentially connected a second introduction portion and a third introduction portion, wherein the first introduction portion is embedded in the insulating disk; the second introduction portion is located in the electromagnetic shielding space; The third introduction portion protrudes to the outside of the lower electrode cavity through the first through hole.
  • the first lead-in section includes: an RF sleeve having an upper end electrically connected to the base body, a lower end extending to a lower surface of the insulating disk, and a second lead-in connection; a first insulating member disposed in the RF sleeve and including an upper contact surface in contact with a lower surface of the base body and opposite the second lead-in portion a lower contact surface; and a plurality of first conductive paths are formed in the first insulating member, each of the first conductive paths extending from the upper contact surface to the lower contact surface; each of the first The components pass through the respective first conductive channels in a one-to-one correspondence.
  • the RF sleeve is a vertically disposed straight cylinder, and a connection barrel having a diameter smaller than the straight cylinder is formed at an upper end of the straight cylinder, and the connection cylinder is embedded in the base a lower end of the straight barrel extending to a lower surface of the insulating disk and connected to the second lead-in portion;
  • the first insulating member including a central portion embedded in the straight tube and surrounding An outer ring portion on the outer peripheral wall of the straight cylinder; wherein a lower surface of the center portion serves as the lower contact surface; an upper surface of the outer ring portion serves as the upper contact surface; at the center portion Forming a first passage therein, forming a second passage in the tubular wall of the straight cylinder, and forming a third passage in the outer ring portion, the first passage, the second passage and the third passage being butted to form the First conductive path.
  • a plurality of the first conductive vias are layered in a vertical direction in the first insulating member.
  • the plurality of first conductive paths include: at least one conductive channel corresponding to the heating wire, and at least one conductive channel corresponding to the wire for electrostatic adsorption; the wire corresponding to the heating The conductive path is located in the lower layer of the conductive path corresponding to the wire for electrostatic adsorption.
  • the RF sleeve is a cone, the diameter of the upper end of the cone is larger than the diameter of the lower end of the cone; and the upper end of the cone is electrically connected to the base body a lower end of the cone extends to a lower surface of the insulating disk and is coupled to the second lead-in portion; the first insulating member is embedded in the cone and shaped with the cone Consistent.
  • the second lead-in section includes: a first radio frequency duct, the first radio frequency duct has an arc shape, and an upper end of the first radio frequency duct and the first lead-in point Connecting, the lower end of the first RF conduit is connected to the third lead-in portion; the second insulating member is disposed in the first RF conduit, and the first end face of the second insulating member is The second lead-in portion of the second insulating member is opposite to the third lead-in portion; a plurality of second conductive channels are formed in the second insulating member, each of the Two conductive channels along An axis of the first RF conduit is disposed, and the second conductive channel extends from the first end surface to the second end surface; each of the first components passes through each of the second conductive channels in a one-to-one correspondence .
  • the third lead-in section includes: a second RF duct, one end of the second RF duct is connected to the second lead-in section, and the other end of the second RF duct Horizontally extending to an outer portion of the lower electrode cavity along an axis of the first through hole; a third insulating member disposed in the second RF conduit, and a first end surface of the third insulating member and the The second lead-in portion is opposite; and a plurality of third conductive channels are formed in the third insulating member, each of the third conductive channels is disposed along an axis of the second RF conduit, and the third The conductive passage extends from the first end surface of the third insulating member to the second end surface of the third insulating member; each of the first members passes through each of the third conductive passages in a one-to-one correspondence, and The second end surface of the third insulating member protrudes.
  • one end of the second end surface of the corresponding third insulating member of the second RF conduit is provided with a conductive pillar; the second RF conduit is located at the second end surface of the third insulating member
  • the sidewall between the conductive pillars is provided with a fourth passage, and the first member protruding from the second end surface of the third insulating member extends outward from the fourth passage.
  • the first component includes a plurality of heating wires and at least one wire for electrostatic adsorption, wherein the plurality of heating wires are symmetrically distributed around an axis of the electromagnetic shielding space; At least one wire for electrostatic attraction is located inside the plurality of heating wires.
  • the inner diameter of the electromagnetic shielding space is 2 to 6 times the outer diameter of the second introduction portion.
  • the outer diameter of the second lead-in fraction ranges from 15 to 50 mm.
  • the thickness of the insulating disk ranges from 60 to 300 mm.
  • the lower electrode mechanism further includes: at least one first insulating ring, the third lead-in portion is fixed to the inner wall of the electromagnetic shielding space by the first insulating ring, The isolation of the inner wall of the electromagnetic shielding space; and/or the at least one second insulating ring, the third introducing portion being fixed to the inner wall of the first through hole by the second insulating ring, The isolation of the inner wall of the first through hole.
  • reaction chamber in which any of the above lower electrode mechanisms is disposed.
  • the lower electrode mechanism is coupled to the reaction chamber, and the reaction chamber is formed with a third through hole and a fourth through hole, the third through hole and the first through hole
  • the through holes communicate to form a first introduction passage
  • the fourth through hole communicates with the second through hole to form a second introduction passage
  • the first member protrudes to the reaction chamber through the first introduction passage Outside the chamber, the second member projects through the second introduction passage to the outside of the reaction chamber.
  • the lower electrode mechanism further includes a second shielding module disposed outside the reaction chamber and forming a closed first introduction channel and an outside a second shielded cavity at the outer end of the communication.
  • a cavity of the lower electrode cavity is coupled to a sidewall of the reaction chamber, and the third via and the fourth via are formed in a sidewall of the reaction chamber.
  • a fifth through hole is disposed on a sidewall of the reaction chamber, and a side cover is disposed on an outer side of the fifth through hole, and a cavity and a cavity of the lower electrode cavity a side cover is formed, the third through hole and the fourth through hole are formed in the side cover;
  • a horizontal rail is disposed at a bottom of the reaction chamber, and the side cover is connected to the horizontal rail; The side cover can be moved to the outside of the reaction chamber to move the lower electrode mechanism out of the reaction chamber as a whole.
  • FIG. 1A is a cross-sectional view of a lower electrode mechanism provided in accordance with an embodiment of the present disclosure
  • FIG. 1B is a top plan view of a lower electrode mechanism provided in accordance with an embodiment of the present disclosure
  • FIG. 2 is a cross-sectional view of a first shielding module employed in accordance with an embodiment of the present disclosure
  • FIG. 3 is a cross-sectional view of a first component employed in accordance with an embodiment of the present disclosure
  • FIG. 4 is a cross-sectional view of a first lead-in section of a lead-in assembly employed in accordance with an embodiment of the present disclosure
  • FIG. 5 is another cross-sectional view of a first lead-in section of a lead-in assembly employed in accordance with an embodiment of the present disclosure
  • 6A is a cross-sectional view of a second lead-in section of a lead-in assembly employed in accordance with an embodiment of the present disclosure
  • 6B is another cross-sectional view of a second lead-in section of a lead-in assembly employed in accordance with an embodiment of the present disclosure
  • Figure 6C is an enlarged view of the area A in Figure 6A;
  • FIG. 7 is a cross-sectional view of a third lead-in section of a lead-in assembly employed in accordance with an embodiment of the present disclosure
  • FIG. 8 is another cross-sectional view of a third lead-in section of a lead-in assembly employed in accordance with an embodiment of the present disclosure
  • Figure 9 is a radial cross-sectional view of the first introduction section
  • FIG. 10 is another cross-sectional view of a first lead-in section of a lead-in assembly employed in accordance with an embodiment of the present disclosure
  • FIG. 11 is a cross-sectional view of a reaction chamber provided in accordance with another embodiment of the present disclosure.
  • FIG. 12 is another cross-sectional view of a reaction chamber provided in accordance with another embodiment of the present disclosure.
  • the present disclosure provides a lower electrode mechanism including a susceptor for carrying a workpiece to be processed, and a lower electrode cavity disposed under the pedestal, wherein the lower electrode cavity includes an electromagnetic shielding space and a non-electromagnetic shielding space that are isolated from each other In order to prevent the first component in the electromagnetic shielding space from being interfered by the second component from the non-electromagnetic shielding space, thereby not only avoiding the influence of the electric field uniformity caused by the radio frequency interference, but also reducing the radio frequency leakage by means of the electromagnetic shielding space. , which can improve RF stability.
  • the electromagnetic shielding space and the non-electromagnetic shielding space respectively communicate with the outside through the first through hole and the second through hole penetrating the lower electrode cavity body, and the first component introduces the electromagnetic shielding space through the first through hole; the second component A non-electromagnetic shielding space is introduced through the second through hole.
  • the lower electrode mechanism according to the embodiment of the present disclosure is located in the reaction chamber, and is used for bearing The susceptor 1 carrying the workpiece 11 to be processed, and the lower electrode chamber 12 disposed under the susceptor 1 are placed.
  • the lower electrode cavity 12 includes an electromagnetic shielding space 55 and a non-electromagnetic shielding space 20 which are separated from each other.
  • the electromagnetic shielding space 55 can be prevented from being A component 25 is subject to interference from the second component 26 within the non-electromagnetically shielded space 20.
  • the cavity 2 includes a cavity body having a first extension 21 formed on one side of the cavity body, the first extension 21 extending to an inner surface of the sidewall 3 of the reaction chamber where the lower electrode mechanism is located And, a first through hole 23 and a second through hole 24 that are horizontally disposed are formed in the first extension portion 21.
  • the orthographic projection shape of the inner surface of the side wall 3 of the reaction chamber in which the lower electrode mechanism is located in the axial direction of the reaction chamber is circular, that is, the internal space 32 of the reaction chamber is a symmetrical structure. Because the first extension portion 21 protrudes relative to the base 1, this makes the overall structure of the lower electrode mechanism asymmetric, thereby affecting the uniform airflow field in the internal space 32 of the reaction chamber in which the lower electrode mechanism is located. Sex, which in turn affects process uniformity. To this end, preferably, as shown in FIG.
  • a second extension 22 is provided on the other side of the cavity body opposite to the first extension 21, and the second extension 22 is opposite to the first extension 21
  • the center line 111 of the susceptor 1 in the radial direction is symmetrical, so that the uniformity of the airflow field of the internal space 32 of the reaction chamber in which the lower electrode mechanism is located can be ensured, thereby improving the process uniformity.
  • the size and outer shape of the second extension 22 described above tend to coincide with the size and outer shape of the first extension 21 described above such that the overall structure of the lower electrode mechanism is symmetrical.
  • the first component 25 is sequentially connected to the first component interface (not shown) in the susceptor 1 through the first through hole 23 and the electromagnetic shielding space 55; the second component 26 is sequentially passed through the second component.
  • the through hole 24 and the non-electromagnetic shielding space 20 are connected to a second component interface (not shown) in the susceptor 1.
  • the susceptor 1 has a heating function, that is, a heating element is provided in the susceptor 1 to control the temperature of the workpiece 11 to be processed.
  • the first member 25 includes an interface for introducing the heating wire 501, and the heating wire 501 is provided in the susceptor 1 for electrically connecting the heating element to the output end of the heating wire 501.
  • the input end of the heating wire 501 is electrically connected to an AC power source outside the reaction chamber where the lower electrode mechanism is located to provide alternating current for heating. If the base 1 is an electrostatic chuck, it is also useful inside.
  • the first member 25 further includes a wire 502 for electrostatic attraction, and a wire 502 for electrostatic adsorption is provided in the susceptor 1 in the case of a DC electrode that generates an electrostatic attraction between the workpiece 11 and the workpiece 11 to be processed.
  • the interface is configured to electrically connect the DC electrode to the output end of the electrostatic adsorption wire 502, and the input end of the electrostatic adsorption wire 502 is electrically connected to a DC power source outside the reaction chamber where the lower electrode mechanism is located to provide electrostatic adsorption. DC power.
  • the first component 25 further includes an interface for introducing the radio frequency conductive component, and the radio frequency conductive component is disposed in the susceptor 1 to output the pedestal 1 and the radio frequency conductive component.
  • the terminal is electrically connected, and the RF conductive component is electrically connected to a matching device and a RF power source outside the reaction chamber where the lower electrode mechanism is located to provide a radio frequency current.
  • the first member 25 generally includes a heating wire 501, a static electricity adsorption wire 502, and a radio frequency conductive member.
  • a back-blowing passage for introducing a cooling gas into a gap between the susceptor 1 and the workpiece 11 to be processed, and a cooling passage for cooling the susceptor 1, in which case,
  • the second component 26 includes a back-blowing line 8 and an interface of the back-blowing line 8 is provided in the base 1 for connecting the back-blowing passage to the output end of the back-blowing line 8, the input end of the back-blowing line 8 and
  • a blowback gas source is connected outside the reaction chamber where the lower electrode mechanism is located to provide a cooling gas.
  • a cooling passage is also provided in the base 1 for cooling the base 1, in which case the second member 26 further includes a cooling line 9, and an interface of the cooling line 9 is provided in the base 1.
  • the cooling passage is connected to the output end of the cooling line 9, and the input end of the cooling line 9 is connected to a cooling water source outside the reaction chamber where the lower electrode mechanism is located to provide cooling water.
  • a temperature sensor is further disposed in the base 1, in which case the second component 26 further includes a wire 10 of the temperature sensor, and an interface of the wire 10 is disposed in the base 1 The temperature sensor is connected to the output end of the wire 10.
  • the output end of the wire 10 is connected to a control unit outside the reaction chamber where the lower electrode mechanism is located for outputting the detection data to the control unit.
  • a ejector mechanism 7 is provided in the non-electromagnetic shielding space 20 for lifting the workpiece 11 on the susceptor 1 during the pick-and-place operation.
  • the second component 26 described above generally includes a blowback line 8, a cooling line 9, and a wire 10.
  • the susceptor 1 includes a susceptor body and an insulating disk 51 which are disposed in this order from top to bottom.
  • An insulating disk 51 is disposed on the top of the lower electrode cavity 12 for carrying the base body and electrically insulating the base body from the cavity 2 of the lower electrode cavity.
  • the insulating disk 51 has a disk shape, which can It is made of an insulating material such as aluminum oxide.
  • the thickness of the insulating disk 51 ranges from 60 to 300 mm to ensure good insulation between the base body and the cavity 2 of the lower electrode cavity and components therein, and the potential of the base body can be stabilized.
  • the portions of the back-blowing line 8, the cooling line 9, and the thimble mechanism 7 that are connected to the base body are made of an insulating material to electrically insulate the three from the base body.
  • the lower electrode assembly further includes a first shielding module disposed between the inner end of the first through hole 23 and the base 1 and located in the lower electrode cavity 12 to form a first electromagnetic shielding cavity.
  • the first electromagnetic shielding cavity is an electromagnetic shielding space 55.
  • the space outside the first electromagnetic shielding cavity in the lower electrode cavity 12 is the non-electromagnetic shielding space 20.
  • the first shielding module includes a shielding sleeve 53 disposed in the lower electrode cavity 12 and having an arc shape, and one end of the shielding sleeve 53 and the interface plate 52 disposed at the bottom of the insulating disk 51. Connected, the other end of the shield sleeve 53 communicates with the first introduction passage 41 to form the first electromagnetic shielding chamber described above.
  • the shield sleeve 53 arcuate, the space occupied by the shield sleeve 53 in the lower electrode chamber 12 can be saved, thereby facilitating the arrangement of the second component in the non-electromagnetic shielding space 20.
  • the shielding sleeve 53 and the interface disk 52 are provided with elastic conductive sheets to improve the shielding sleeve 53 through the interface disk 52 and The effect of the cavity 2 being grounded.
  • the lower electrode mechanism further includes a lead-in assembly 60 serving as a carrier for the first member 25 described above, integrating all of the first members 25 and introducing them into the bottom of the base 1 so that The introduction paths of the different first members 25 are the same, so that the arrangement uniformity of the first members 25 can be improved.
  • a lead-in assembly 60 serving as a carrier for the first member 25 described above, integrating all of the first members 25 and introducing them into the bottom of the base 1 so that The introduction paths of the different first members 25 are the same, so that the arrangement uniformity of the first members 25 can be improved.
  • the extending direction of the lead-in assembly 60 sequentially coincides with the axial direction of the first through hole 23 and the axial direction of the electromagnetic shielding space 55.
  • the lead-in assembly 60 includes a first lead-in section 61, a second lead-in section 62, and a third lead-in section 63 that are sequentially connected, wherein the first lead-in section 61 is embedded in the insulating disk 51;
  • the introduction section 62 is located in the electromagnetic shielding space 55; the third introduction section 63 protrudes through the first through hole 23 to the outside of the lower electrode mechanism.
  • the first lead-in section 61 includes a radio frequency sleeve 611 and a first insulating member 618, wherein the radio frequency sleeve 611 is used as the above-mentioned radio frequency conductive member to conduct radio frequency power.
  • the upper end of the RF sleeve 611 is electrically connected to the base body, and the RF sleeve 611 The lower end extends to the lower surface of the insulating disk 51 and is connected to the second lead-in section 62.
  • the RF sleeve 611 is a vertically disposed straight cylinder, and a connection barrel 612 having a diameter smaller than the straight cylinder is formed at an upper end of the straight cylinder, and correspondingly, a groove is formed on a lower surface of the base body. As the interface of the connecting barrel 612, the connecting barrel 612 is embedded in the groove, so that the RF sleeve 611 can be in good electrical contact with the base body.
  • the lower end of the straight cylinder extends to the lower surface of the insulating disk 51 and is connected to the second lead-in section 62.
  • the first insulating member 618 serves as a carrier for the heating lead 501 and the electrostatic attraction lead 502, and electrically insulates both the heating lead 501 and the electrostatic attracting lead 502 from the radio frequency sleeve 611.
  • the first insulating member 618 is disposed in the RF sleeve 611, and the first insulating member 618 is approximately filled with the internal space of the RF sleeve 611 to fix the heating lead 501 and the electrostatic adsorption lead 502. Both are electrically insulated from the RF sleeve 611 described above.
  • the first insulating member 618 includes a central portion 613 embedded in the straight cylinder and an outer ring portion 614 surrounding the outer peripheral wall of the straight cylinder.
  • the lower surface of the central portion 613 is a lower contact surface 616, and the outer ring portion 614
  • the upper surface is the upper contact surface 615.
  • the upper contact surface 615 is in contact with the lower surface of the base body
  • the lower contact surface 616 is in contact with the second lead-in portion 62
  • a plurality of first conductive paths 17 are formed in the first insulating member 618, each strip
  • the first conductive path 17 extends from the upper contact surface 615 to the lower contact surface 616, and the heating wire 501 and the electrostatic adsorption wire 502 pass through the respective first conductive paths 17 in a one-to-one correspondence.
  • a first passage 14 is formed in the central portion 613, a second passage 15 is formed in the cylindrical wall of the straight cylinder, and a third passage 16 is formed in the outer annular portion 614, the first passage 14, the second passage 15, and the third The channel 16 is butted to form the first conductive path 17 described above.
  • the first conductive path 17 is disposed such that the heating wire 501 and the electrostatic adsorption wire 502 extend vertically upward from the lower contact surface 616 into the central portion 613 and pass through the straight tube in the horizontal direction.
  • the barrel wall extends into the outer ring portion 614 and finally extends vertically upward from the upper contact surface 615 and is coupled to a corresponding interface in the base body.
  • the plurality of first conductive channels 17 are layered in the vertical direction in the first insulating member 618 to prevent the different first members 25 from interfering with each other.
  • the heights of the plurality of first conductive passages 17 extending horizontally in the central portion 613 and the outer ring portion 614 are different to achieve a layered arrangement.
  • the heating wire 501 and the electrostatic adsorption wire 502 are layered, and it is possible to reduce the interference of the heating wire 501 that supplies the alternating current to the electrostatic attraction wire 502 that carries the direct current.
  • the electrostatic adsorption wire 502 Different from the power supply voltage of the heating wire 501 (generally, the DC voltage is 2400 V and the AC voltage is 220 V), the first conductive path of the corresponding heating wire 501 can be disposed in the first conductive path corresponding to the electrostatic adsorption wire 502.
  • the lower layer is such that the heating wire 501 is closer to the grounding position to ensure that the heating wire 501 is sufficiently insulated from the ground.
  • the arrangement of the plurality of first conductive paths 17 shown in FIG. 4 satisfies the form shown in FIG. 9: a plurality of heating wires 501 are symmetrically distributed around the axis of the center portion 613; and at least one wire 502 for electrostatic adsorption is used. It is located inside the plurality of heating wires 501.
  • the first introduction section 61 includes a radio frequency sleeve 617 and a first insulator 618, wherein the RF sleeve 617 is a cone, the cone
  • the upper end diameter is larger than the diameter of the lower end of the cone, that is, the shape of the cone is similar to the "bowl" shape to accommodate the first insulator 618 therein.
  • the upper end 617a of the cone is electrically connected to the base body, and the upper end 617a of the cone can be embedded in the base body to achieve good electrical contact between the cone and the base body.
  • the lower end 617b of the cone extends to the lower surface of the insulating disk 51 and is coupled to the second lead-in section 62.
  • the first insulating member 618 is embedded in the cone and conforms to the shape of the cone, that is, also in the shape of a "bowl" to fix the heating wire 501 and the electrostatic adsorption wire 502, and at the same time Both are electrically insulated from the RF sleeve 611 described above.
  • the structure and arrangement of the first conductive vias 17 disposed in the first insulating member 618 are the same as those of the first conductive vias described above, and are not described herein again.
  • the second lead-in section 62 includes a first RF conduit 621 and a second insulating member 622, wherein the first RF conduit 621 functions as a radio frequency conductive member with an upper end and a lower end of the RF sleeve 611.
  • the upper end of the first RF conduit 621 is sleeved on the outer peripheral wall of the lower end of the RF sleeve 611, and the two can be fixedly connected by screws.
  • an elastic conductive piece 624 is disposed between the inner peripheral wall of the upper end of the first RF conduit 621 and the outer peripheral wall of the lower end of the RF sleeve 611 for enhancing electrical contact therebetween, thereby achieving good electrical conduction.
  • the first RF conduit 621 has an arc shape, and the lower end extends along the arcuate axis of the shield sleeve 53 and is connected to the third lead-in section 63.
  • the second insulating member 622 is filled in the first RF conduit 621, and similar to the first insulating member, the second insulating member 622 is approximately filled with the internal space of the first RF conduit 621 to realize the heating lead 501 and the static electricity.
  • the adsorption wire 502 is fixed while both are electrically insulated from the first RF conduit 621.
  • the first end surface of the second insulating member 622 and the first lead-in portion 61 In contrast, the second end surface of the second insulating member 622 is opposed to the third lead-in portion 63.
  • a plurality of second conductive vias 18 are formed in the second insulating member 622.
  • the second conductive vias 18 are disposed along the axis of the first RF conduit 621, and one end of the second conductive vias 18 extends to the second insulating member 622.
  • the first end surface extends from the first end surface to the second end surface; the heating wire 501 and the electrostatic adsorption wire 502 pass through the respective second conductive channels 18 in a one-to-one correspondence, and the plurality of second conductive channels
  • the arrangement is identical to the arrangement of the first conductive channels shown in FIG.
  • the manner in which the heating wire 501 and the electrostatic adsorption wire 502 in the second conductive path are connected to the portion in the first conductive path is specifically as shown in FIG. 6C, the heating wire 501 and the electrostatic adsorption.
  • the end portion of the portion of the wire 502 in the second conductive path is provided with a tab 623, and correspondingly, the end portion of the heating wire 501 and the electrostatic attraction wire 502 in the first conductive path is provided with a socket (not shown), through the mating piece 623 and the socket, to realize the mutual conductance of the portion of the heating wire 501 and the electrostatic adsorption wire 502 in the second conductive path and the portion in the first conductive path through.
  • the inner diameter of the shielding sleeve 53 is 2-6 times of the outer diameter of the second introduction portion 62, so that the electromagnetic shielding space 55 is wide enough to prevent the shielding sleeve 53 from interfering with the second introduction portion 62.
  • Radio frequency conductive component ie, first RF conduit 621).
  • the outer diameter of the second lead-in section 62 ranges from 15 to 50 mm to provide sufficient space for the first component 25 to be arranged for different functions.
  • the outer diameter of the third introduction portion 63 may be the same as the outer diameter of the second introduction portion 62.
  • the third lead-in section 63 includes a second RF duct 631 and a third insulator 632, wherein the second RF duct 631 functions as a radio frequency conductive member, one end thereof and the second lead-in section 62.
  • the connection may be the same as the connection of the upper end of the first RF conduit 621 shown in FIG. 6C to the lower end of the RF sleeve 611.
  • the other end of the second RF conduit 631 extends horizontally along the axis of the first through hole 23 to the outside of the lower electrode mechanism.
  • the third insulating member 632 is disposed in the second RF conduit 631, and the third insulating member 632 is approximately filled with the internal space of the second RF conduit 631 to achieve fixation of the heating wire 501 and the electrostatic adsorption wire 502, and simultaneously Both are electrically insulated from the second RF conduit 631.
  • the first end surface of the third insulating member 632 is opposite to the second lead-in portion, that is, opposite to the second end surface of the second insulating member 622 (the end facing the second through hole 23).
  • each of the third conductive channels 19 is disposed along an axis of the second RF conduit 631, and the third conductive path 19 extends from the first end surface of the third insulating member 632 to the second end surface thereof .
  • the heating wire 501 and the electrostatic attraction wire 502 pass through the respective third conductive paths 19 in one-to-one correspondence and protrude from the second end surface of the third insulating member 632.
  • the arrangement of the plurality of third conductive paths is identical to the arrangement of the first conductive channels shown in FIG.
  • the first shielding module further includes a first insulating ring 531 disposed on the inner wall of the shielding sleeve 53 for fixing the second introduction portion 62 and the second introduction portion 62. It is isolated from the shield sleeve 53 to ensure electrical insulation between the second lead-in section 62 and the shield sleeve 53.
  • the first insulating ring 531 may be a closed ring body or may be provided by a plurality of separate bodies spaced around the inner wall of the shielding sleeve 53.
  • the second lead-in section 62 passes through the ring hole of the first insulating ring 531.
  • the first insulating ring 531 may also be plural, and the plurality of first insulating rings 531 are spaced apart along the axial direction of the shielding sleeve 53.
  • the first shielding module further includes a second insulating ring 231 disposed on the inner wall of the second through hole 23 for fixing the third lead-in portion 63, and the second lead-in portion 63 is The first extensions 21 are isolated.
  • the second insulating ring 231 is plural and disposed along the axial direction of the second through hole 23, and the third lead-in portion 63 sequentially passes through the ring holes of the plurality of second insulating rings 231.
  • the second insulating ring 231 can also be set to one according to the specific situation.
  • the present disclosure provides a lower electrode mechanism that prevents the first component in the electromagnetic shielding space from being received from the non-electromagnetic shielding space by forming the lower electrode cavity into an electromagnetic shielding space and a non-electromagnetic shielding space that are isolated from each other.
  • the interference of the second component can not only avoid the influence of the electric field uniformity caused by the radio frequency interference, but also reduce the radio frequency leakage by means of the electromagnetic shielding space, thereby improving the radio frequency stability.
  • FIG. 11 and FIG. 12 together, a RF coil 103 is disposed above the reaction chamber 100, and passes through the matching device 104 and the RF power source ( An electrical connection is not shown in the drawing, and a lower electrode mechanism 200 is provided in the reaction chamber 100, which employs the lower electrode mechanism provided in the previous embodiment of the present disclosure.
  • the side wall 3 of the reaction chamber is formed with a third through hole 30 and a fourth through hole 31 which are horizontally disposed.
  • the third through hole 30 communicates with the first through hole 23 of the upper electrode mechanism to constitute the first introduction passage 41; the fourth through hole 31 communicates with the second through hole 24 of the upper electrode mechanism to constitute the second introduction passage 42.
  • Electromagnetic screen The shielding space 55 and the non-electromagnetic shielding space 20 communicate with the outside through the first introduction passage 41 and the second introduction passage 42, respectively.
  • the third introduction section 63 projects out of the reaction chamber through the first introduction passage 41, and the second member 26 projects out through the second introduction passage 42 to the outside of the reaction chamber.
  • the lower electrode mechanism further includes a second shielding module 43 disposed outside the reaction chamber and forming a second shielding cavity 54, the second The shielding cavity 54 closes the outer end of the first introduction passage 41 communicating with the outside.
  • the second shielding cavity 54 has a box shape and is disposed outside the third through hole 30 of the reaction chamber side wall 3, so that radio frequency leakage can be further reduced.
  • the sidewall 3 of the reaction chamber is grounded, the cavity of the second shield cavity 54 is grounded through the sidewall 3, and preferably, the cavity 3 and the cavity of the second shield cavity 54 are in the cavity of the reaction chamber.
  • An elastic conductive piece is disposed at the joint of the body to improve the grounding effect of the second shielding cavity 54.
  • the second shield cavity 54 has an opening into which the first component 25 is introduced.
  • the opening includes a radio frequency opening 541 for introducing a radio frequency conductive member, a wire opening 542 for introducing the heating wire 501 and the electrostatic attraction wire 502.
  • the second RF conduit 631 extending from the first through hole 23 is connected to the RF source located outside the second shielding cavity 54 through the RF opening 541 on the second shielding cavity 54.
  • the RF source includes a matcher 4 and a radio frequency power source (not shown) that are sequentially connected.
  • the heating wire 501 and the electrostatic attraction wire 502 from which the second end surface of the third insulating member 632 protrudes are connected to the power source located outside the second shield cavity 54 through the wire opening 542.
  • a conductive post 634 is disposed at one end of the second end surface of the corresponding third insulating member 632 of the second RF conduit 631, and the conductive post 634 is connected to the matching device 4 through the RF opening 541, and the specific connection manner is adopted.
  • the RF opening 541 may be located at a position opposite to the second end surface of the third insulating member 632.
  • a fourth passage 40 is disposed on the outer peripheral wall of the second RF conduit 631, and the heating wire 501 and the electrostatic adsorption wire 502 are sequentially extended through the fourth passage 40 and the wire opening 542, and are connected to the corresponding power source. .
  • a through hole 101 capable of passing the lower electrode mechanism is disposed on the sidewall of the reaction chamber 100, and the outer side of the through hole 101 is provided with a side cover 102, a cavity 200 of the lower electrode cavity and the side cover 102 connections.
  • a horizontal rail 105 and a connecting member slidably coupled thereto are disposed at the bottom of the reaction chamber 100, and the side cover is connected to the horizontal rail 105.
  • the side cover 102 can The outside of the reaction chamber 100 is moved to move the lower electrode mechanism as a whole out of the reaction chamber 100.
  • the lower electrode mechanism 200 needs to be repaired, the lower electrode mechanism can be entirely removed from the reaction chamber 100 by manual or automatic control, thereby facilitating the maintenance of the lower electrode mechanism 200.
  • the reaction chamber provided by the embodiment of the present disclosure can avoid the electric field uniformity caused by radio frequency interference, and can also reduce the radio frequency leakage, thereby improving the radio frequency stability, by using the above-mentioned upper electrode mechanism provided by the embodiment of the present disclosure. Sex.
  • ordinal numbers such as “first,” “second,” “third,” and the like, as used in the ⁇ Desc/Clms Page number> Representing the order of one component and another component, or the order of the manufacturing method, the use of these ordinal numbers is only used to make a component with a certain name clearly distinguishable from another component with the same name.

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Abstract

一种下电极机构及反应腔室，下电极机构包括用于承载被加工工件的基座（1），设置在基座下方的下电极腔（12），其包括相互隔离的电磁屏蔽空间（55）和非电磁屏蔽空间（20），下电极腔的腔体（2）开设有第一通孔（23）和第二通孔（24），电磁屏蔽空间和非电磁屏蔽空间分别通过第一通孔和第二通孔与外界连通，以防止电磁屏蔽空间内的第一部件（25）受到来自非电磁屏蔽空间内的第二部件（26）的干扰。

Description

一种下电极机构及反应腔室 技术领域
本公开涉及微电子技术领域，具体地，涉及一种下电极机构及反应腔室。
背景技术
电感耦合等离子体刻蚀(Inductive Coupled Plasma，以下简称ICP)设备在半导体晶片领域，尤其是在硅刻蚀制作领域中被广泛的应用。
现有的ICP设备主要包括进气机构，上电极机构，以及下电极机构，其中，进气机构用于向反应腔室内输送工艺气体；上电极机构用于激发工艺气体形成等离子体；下电极机构用于承载被加工工件，并向被加工工件加载射频偏压，以吸引等离子体刻蚀被加工工件表面。
下电极机构包括用于承载被加工工件的基座，该基座可以为静电卡盘。并且，在基座的下方设置有下电极腔，该下电极腔的腔体与反应腔室的腔室侧壁构成与外界连通的引入通道，不同功能的导电部件通过该引入通道进入下电极腔内，并通过设置在基座底部的安装盘引入至基座底部，并与该基座电导通。该导电部件通常包括射频连接柱、加热用导线和静电吸附用导线等。其中，射频连接柱的外端与射频源(匹配器与射频电源)连接，射频连接柱的内端由下而上贯穿上述安装盘，并与基座电导通。与该射频连接柱相类似的，加热用导线和静电吸附用导线各自的外端分别与交流电源和直流电源连接，内端由下而上贯穿上述安装盘，并与基座中的加热元件和直流电极电导通。另外，在下电极腔中还设置有用于向基座中的冷却管道通入冷却水的冷却管路，用于向基座中的背吹管道通入背吹气体的背吹管路，用于检测基座温度的温度传感器以及顶针机构等等。
申请人在实现本公开的过程中发现，上述下电极机构在实际应用中不可避免此存在以下问题：
其一，在上述下电极腔中，射频连接柱与其他金属部件之间存在相互干扰，导致电场的均匀性受到影响；
其二，上述射频连接柱、安装盘和基座均为导电材料，三者之间相互 导通，导致射频泄漏，从而影响射频稳定性。
公开内容
根据本公开的一个方面，提供了一种下电极机构，包括：基座，用于承载被加工工件；下电极腔，设置在所述基座下方，包括：相互隔离的电磁屏蔽空间和非电磁屏蔽空间，所述下电极腔的腔体开设有第一通孔和第二通孔，所述电磁屏蔽空间和非电磁屏蔽空间分别通过所述第一通孔和第二通孔与外界连通，以防止所述电磁屏蔽空间内的第一部件受到来自所述非电磁屏蔽空间内的第二部件的干扰。
在本公开的一些实施例中，所述下电极腔的腔体包括腔体本体，在所述腔体本体的一侧形成有第一延伸部，在所述第一延伸部中形成有水平设置的第一通孔和第二通孔。
在本公开的一些实施例中，在所述腔体本体的与所述第一延伸部相对的另一侧形成有第二延伸部，所述第二延伸部与所述第一延伸部相对于所述基座在径向上的中心线对称。
在本公开的一些实施例中所述下电极机构还包括第一屏蔽模组，所述第一屏蔽模组设置在所述第一通孔的与所述下电极腔连通的内端和所述基座之间，且位于所述下电极腔中，以形成第一电磁屏蔽腔，所述第一电磁屏蔽腔即为所述电磁屏蔽空间；所述下电极腔内的位于所述第一电磁屏蔽腔之外的空间即为所述非电磁屏蔽空间。
在本公开的一些实施例中，所述第一屏蔽模组包括：屏蔽套管，呈圆弧状，其一端设置在所述基座的下方，其另一端与所述第一通孔连通，从而形成所述第一电磁屏蔽腔。
在本公开的一些实施例中，所述基座包括由上至下依次设置的基座本体和绝缘盘；所述下电极机构还包括引入组件，所述引入组件包括依次连接的第一引入分部、第二引入分部和第三引入分部，其中，所述第一引入分部内嵌在所述绝缘盘中；所述第二引入分部位于所述电磁屏蔽空间中；所述第三引入分部通过所述第一通孔伸出至所述下电极腔的外部。
在本公开的一些实施例中，所述第一引入分部包括：射频套管，其上端与所述基座本体电连接，其下端延伸至所述绝缘盘的下表面，且与所述 第二引入分部连接；第一绝缘件，设置在所述射频套管中，且包括与所述基座本体的下表面相接触的上接触面，以及与所述第二引入分部相对的下接触面；并且，在所述第一绝缘件中形成有多条第一导电通道，每条所述第一导电通道自所述上接触面延伸至所述下接触面；各个所述第一部件一一对应地穿过各个所述第一导电通道。
在本公开的一些实施例中，所述射频套管为竖直设置的直筒，并且在所述直筒的上端形成有直径小于所述直筒的连接筒，所述连接筒内嵌在所述基座本体中；所述直筒的下端延伸至所述绝缘盘的下表面，且与所述第二引入分部连接；所述第一绝缘件包括内嵌在所述直筒中的中心部和环绕设置在所述直筒的外周壁上的外环部；其中，所述中心部的下表面用作所述下接触面；所述外环部的上表面用作所述上接触面；在所述中心部中形成有第一通道，在所述直筒的筒壁中形成第二通道，在所述外环部中形成有第三通道，所述第一通道、第二通道和第三通道对接形成所述第一导电通道。
在本公开的一些实施例中，多条所述第一导电通道在所述第一绝缘件中沿竖直方向分层设置。
在本公开的一些实施例中，所述多条第一导电通道包括：至少一个对应于加热用导线的导电通道、以及至少一个对应于静电吸附用导线的导电通道；所述对应于加热用导线的导电通道位于对应于静电吸附用导线的导电通道的下层。
在本公开的一些实施例中，所述射频套管为锥筒，所述锥筒的上端直径大于所述锥筒的下端直径；并且，所述锥筒的上端与所述基座本体电导通，所述锥筒的下端延伸至所述绝缘盘的下表面，且与所述第二引入分部连接；所述第一绝缘件内嵌在所述锥筒中，且与所述锥筒的形状相吻合。
在本公开的一些实施例中，所述第二引入分部包括：第一射频导管，所述第一射频导管呈圆弧状，且所述第一射频导管的上端与所述第一引入分部连接，所述第一射频导管的下端与所述第三引入分部连接；第二绝缘件，其设置在所述第一射频导管中，且所述第二绝缘件的第一端面与所述第一引入分部相对，所述第二绝缘件的第二端面与所述第三引入分部相对；在所述第二绝缘件中形成有多条第二导电通道，每条所述第二导电通道沿 所述第一射频导管的轴线设置，并且所述第二导电通道自所述第一端面延伸至所述第二端面；各个所述第一部件一一对应地穿过各个所述第二导电通道。
在本公开的一些实施例中，所述第三引入分部包括：第二射频导管，所述第二射频导管的一端与所述第二引入分部连接，所述第二射频导管的另一端沿所述第一通孔的轴线水平延伸至所述下电极腔的外部；第三绝缘件，其设置在所述第二射频导管中，且所述第三绝缘件的第一端面与所述第二引入分部相对；并且，在所述第三绝缘件中形成有多条第三导电通道，每条所述第三导电通道沿所述第二射频导管的轴线设置，并且所述第三导电通道自所述第三绝缘件的第一端面延伸至所述第三绝缘件的第二端面；各个所述第一部件一一对应地穿过各个所述第三导电通道，并自所述第三绝缘件的第二端面伸出。
在本公开的一些实施例中，所述第二射频导管的对应第三绝缘件第二端面的一端设置有导电柱；所述第二射频导管的位于所述第三绝缘件第二端面与所述导电柱之间的侧壁开设有第四通道，自所述第三绝缘件第二端面伸出的所述第一部件由所述第四通道向外延伸。
在本公开的一些实施例中，所述第一部件包括多条加热用导线和至少一条静电吸附用导线，其中，所述多条加热用导线围绕所述电磁屏蔽空间的轴线对称分布；所述至少一条静电吸附用导线位于所述多条加热用导线的内侧。
在本公开的一些实施例中，所述电磁屏蔽空间的内径是所述第二引入分部的外径的2～6倍。
在本公开的一些实施例中，所述第二引入分部的外径的取值范围在15～50mm。
在本公开的一些实施例中，所述绝缘盘的厚度的取值范围在60～300mm。
在本公开的一些实施例中，所述下电极机构还包括：至少一个第一绝缘环，所述第三引入分部通过所述第一绝缘环固定于所述电磁屏蔽空间内壁，实现与所述电磁屏蔽空间内壁的隔离；和/或，至少一个第二绝缘环，所述第三引入分部通过所述第二绝缘环固定于所述第一通孔内壁，实现与 所述第一通孔内壁的隔离。
根据本公开的另一个方面，还提供了一种反应腔室，在所述反应腔室内设置有上述任一种下电极机构。
在本公开的一些实施例中，所述下电极机构与所述反应腔室连接，所述反应腔室形成有第三通孔和第四通孔，所述第三通孔与所述第一通孔连通，形成第一引入通道；所述第四通孔与所述第二通孔连通，形成第二引入通道；所述第一部件通过所述第一引入通道伸出至所述反应腔室的外部，所述第二部件通过所述第二引入通道伸出至所述反应腔室的外部。
在本公开的一些实施例中，所述下电极机构还包括第二屏蔽模组，所述第二屏蔽模组设置在所述反应腔室的外部，且形成封闭所述第一引入通道与外界连通的外端的第二屏蔽腔。
在本公开的一些实施例中，所述下电极腔的腔体与所述反应腔室的侧壁连接，所述第三通孔和第四通孔形成于所述反应腔室的侧壁。
在本公开的一些实施例中，在所述反应腔室的侧壁上设置有第五通孔，所述第五通孔的外侧设置有侧盖板，所述下电极腔的腔体与所述侧盖板连接，所述第三通孔和第四通孔形成于所述侧盖板；在所述反应腔室的底部设置有水平导轨，所述侧盖板与所述水平导轨连接；所述侧盖板能够向所述反应腔室的外侧移动，以使所述下电极机构整体移出所述反应腔室。
附图说明
附图是用来提供对本公开的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本公开，但并不构成对本公开的限制。在附图中：
图1A为根据本公开实施例提供的下电极机构的剖视图；
图1B为根据本公开实施例提供的下电极机构的俯视图；
图2为根据本公开实施例采用的第一屏蔽模组的剖视图；
图3为根据本公开实施例采用的第一部件的剖视图；
图4为根据本公开实施例采用的引入组件的第一引入分部的剖视图；
图5为根据本公开实施例采用的引入组件的第一引入分部的另一剖视图；
图6A为根据本公开实施例采用的引入组件的第二引入分部的剖视图；
图6B为根据本公开实施例采用的引入组件的第二引入分部的另一剖视图；
图6C为图6A中A区域的放大图；
图7为根据本公开实施例采用的引入组件的第三引入分部的剖视图；
图8为根据本公开实施例采用的引入组件的第三引入分部的另一剖视图；
图9为第一引入分部的径向截面图；
图10为根据本公开实施例采用的引入组件的第一引入分部的另一种剖视图；
图11为根据本公开另一实施例提供的反应腔室的一种剖视图；
图12为根据本公开另一实施例提供的反应腔室的另一种剖视图。
具体实施方式
本公开提供一种下电极机构，其包括用于承载被加工工件的基座，以及设置在该基座下方的下电极腔，其中，下电极腔包括相互隔离的电磁屏蔽空间和非电磁屏蔽空间，以防止电磁屏蔽空间内的第一部件受到来自非电磁屏蔽空间内的第二部件的干扰，从而不仅可以避免因射频干扰导致的电场均匀性受到影响，而且借助电磁屏蔽空间还可以减少射频泄漏，从而可以提高射频稳定性。此外，电磁屏蔽空间和非电磁屏蔽空间分别通过贯穿下电极腔腔体的第一通孔和第二通孔与外界连通，上述第一部件通过第一通孔引入电磁屏蔽空间；上述第二部件通过第二通孔引入非电磁屏蔽空间。
为使本公开的目的、技术方案和优点更加清楚明白，以下结合具体实施例，并参照附图，对本公开进一步详细说明。显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。
下面对上述下电极机构的结构进行详细描述。具体地，请一并参阅图1A～图10，根据本公开实施例的下电极机构位于反应腔室内，包括用于承 载被加工工件11的基座1，以及设置在该基座1下方的下电极腔12。该下电极腔12包括相互隔离的电磁屏蔽空间55和非电磁屏蔽空间20，通过将下电极腔12形成相互隔离的电磁屏蔽空间55和非电磁屏蔽空间20，可以防止电磁屏蔽空间55内的第一部件25受到来自非电磁屏蔽空间20内的第二部件26的干扰。
具体地，腔体2包括腔体本体，在该腔体本体一侧形成有第一延伸部21，该第一延伸部21延伸至上述下电极机构所处反应腔室的侧壁3的内表面；并且，在该第一延伸部21中形成有水平设置的第一通孔23和第二通孔24。
如图1C所示，下电极机构所处反应腔室的侧壁3的内表面在该反应腔室的轴向上的正投影形状为圆形，即，反应腔室的内部空间32是对称结构，而由于上述第一延伸部21相对于基座1凸出，这使得下电极机构的整体结构是非对称的，从而影响了上述下电极机构所处反应腔室的内部空间32中的气流场均匀性，进而影响工艺均匀性。为此，优选的，如图1A所示，在腔体本体的与上述第一延伸部21相对的另一侧设置有第二延伸部22，该第二延伸部22与第一延伸部21相对于基座1在径向上的中心线111对称，从而可以保证下电极机构所处反应腔室的内部空间32的气流场均匀性，进而可以提高工艺均匀性。容易理解，上述第二延伸部22的尺寸和外部形状与上述第一延伸部21的尺寸和外部形状趋于一致，以使下电极机构的整体结构是对称的。
同时参见图2，上述第一部件25依次通过第一通孔23和电磁屏蔽空间55与基座1中的第一部件接口(图中未示出)连接；上述第二部件26依次通过第二通孔24和非电磁屏蔽空间20与基座1中的第二部件接口(图中未示出)连接。
在实际应用中，参见图3，通常需要基座1具有加热功能，即，在基座1中设置有加热元件，以控制被加工工件11的温度。在这种情况下，上述第一部件25包括需要引入加热用导线501，且在基座1中设置有加热用导线501的接口，用以将该加热元件与加热用导线501的输出端电连接，该加热用导线501的输入端与下电极机构所处反应腔室外部的交流电源电连接，以提供加热用的交流电。若基座1为静电卡盘，其内部还设置有用 于与被加工工件11之间产生静电引力的直流电极，在这种情况下，上述第一部件25还包括需要引入静电吸附用导线502，且在基座1中设置有静电吸附用导线502的接口，用以将该直流电极与静电吸附用导线502的输出端电连接，该静电吸附用导线502的输入端与下电极机构所处反应腔室外部的直流电源电连接，以提供静电吸附用的直流电。另外，若需要向基座1加载射频偏压，则第一部件25还包括引入射频导电部件，且在基座1中设置有射频导电部件的接口，以将基座1与射频导电部件的输出端电连接，该射频导电部件与下电极机构所处反应腔室外部的匹配器和射频电源电连接，以提供射频电流。由上可知，上述第一部件25通常包括加热用导线501、静电吸附用导线502和射频导电部件。
在基座1中还设置有用于向基座1与被加工工件11之间的间隙中通入冷却气体的背吹通道，以及用于冷却基座1的冷却通道，在这种情况下，上述第二部件26包括背吹管路8，且在基座1内设置有背吹管路8的接口，用以将上述背吹通道与背吹管路8的输出端连接，背吹管路8的输入端与下电极机构所处反应腔室外部的背吹气源连接，以提供冷却气体。在基座1中还设置有冷却通道，用以冷却基座1，在这种情况下，上述第二部件26还包括冷却管路9，且在基座1内设置有冷却管路9的接口，用以将上述冷却通道与冷却管路9的输出端连接，该冷却管路9的输入端与下电极机构所处反应腔室外部的冷却水源连接，以提供冷却水。除此之外，在基座1内还设置有温度传感器，在这种情况下，上述第二部件26还包括该温度传感器的接线10，且在该基座1内设置有接线10的接口，用以将上述温度传感器与该接线10的输出端连接，该接线10的输出端与下电极机构所处反应腔室外部的控制单元连接，用以向控制单元输出检测数据。另外，在上述非电磁屏蔽空间20内还设置有顶针机构7，用以在进行取放片操作时，升降基座1上的被加工工件11。由上可知，上述第二部件26通常包括背吹管路8、冷却管路9和接线10。
下面对形成上述电磁屏蔽空间55和非电磁屏蔽空间20的结构进行详细描述。具体地，在本实施例中，基座1包括由上至下依次设置的基座本体和绝缘盘51。绝缘盘51设置在下电极腔12的顶部，用于承载基座本体，且使该基座本体与下电极腔的腔体2电绝缘。该绝缘盘51呈盘状，其可 以采用诸如三氧化二铝等的绝缘材料制作。优选的，绝缘盘51的厚度的取值范围在60～300mm，以保证基座本体与下电极腔的腔体2及其内部的部件之间的良好绝缘，且能够使基座本体的电位稳定。另外，优选的，背吹管路8、冷却管路9和顶针机构7与基座本体连接的部分均采用绝缘材料制作，以使三者与基座本体之间电绝缘。
下电极机构还包括第一屏蔽模组，该第一屏蔽模组设置在第一通孔23的内端与基座1之间，且位于下电极腔12中，以形成第一电磁屏蔽腔，该第一电磁屏蔽腔即为电磁屏蔽空间55。下电极腔12内的位于上述第一电磁屏蔽腔之外的空间即为非电磁屏蔽空间20。
在本实施例中，上述第一屏蔽模组包括屏蔽套管53，其设置在下电极腔12内，且呈圆弧状，并且屏蔽套管53的一端与设置在绝缘盘51底部的接口盘52连接，屏蔽套管53的另一端与第一引入通道41连通，从而形成上述第一电磁屏蔽腔。通过使屏蔽套管53呈圆弧状，可以节省屏蔽套管53在下电极腔12内的占用空间，从而给非电磁屏蔽空间20内的第二部件的布置带来方便。另外，优选的，在屏蔽套管53与接口盘52的连接处，以及屏蔽套管53与腔体2的内壁的连接处均设置有弹性导电片，以提高屏蔽套管53通过接口盘52和腔体2接地的效果。
在本实施例中，下电极机构还包括引入组件60，该引入组件60用作上述第一部件25的载体，将所有的第一部件25集成在一起，并引入基座1的底部，以使不同的第一部件25的引入路径相同，从而可以提高第一部件25的布置一致性。
下面对引入组件60的具体结构进行详细描述。具体地，如图1A所示，引入组件60的延伸方向依次与上述第一通孔23的轴向和上述电磁屏蔽空间55的轴向一致。为了便于安装，引入组件60包括依次连接的第一引入分部61、第二引入分部62和第三引入分部63，其中，第一引入分部61内嵌在绝缘盘51中；第二引入分部62位于电磁屏蔽空间55中；第三引入分部63通过第一通孔23伸出至下电极机构的外部。
在本实施例中，如图4和图5所示，第一引入分部61包括射频套管611和第一绝缘件618，其中，射频套管611用作上述射频导电部件，以传导射频功率。射频套管611的上端与基座本体电连接，射频套管611的 下端延伸至绝缘盘51的下表面，且与第二引入分部62连接。在本实施例中，射频套管611为竖直设置的直筒，且在该直筒的上端形成有直径小于该直筒的连接筒612，并且对应地，在基座本体的下表面形成有凹槽，用作该连接筒612的接口，连接筒612内嵌在凹槽中，从而可以实现射频套管611与基座本体良好的电接触。直筒的下端延伸至绝缘盘51的下表面，且与第二引入分部62连接。
第一绝缘件618用作上述加热用导线501和静电吸附用导线502的载体，并使加热用导线501和静电吸附用导线502均与上述射频套管611电绝缘。第一绝缘件618设置在上述射频套管611中，该第一绝缘件618近似充满射频套管611的内部空间，以实现对加热用导线501和静电吸附用导线502的固定，同时使二者均与上述射频套管611电绝缘。具体地，第一绝缘件618包括内嵌在直筒中的中心部613和环绕设置在直筒的外周壁上的外环部614，中心部613的下表面为下接触面616，外环部614的上表面为上接触面615。上接触面615与基座本体的下表面相接触，下接触面616与第二引入分部62相接触，并且，在该第一绝缘件618中形成有多条第一导电通道17，每条第一导电通道17自上接触面615延伸至下接触面616，上述加热用导线501和静电吸附用导线502一一对应地穿过各个第一导电通道17。在中心部613中形成有第一通道14，在直筒的筒壁中形成第二通道15，在外环部614中形成有第三通道16，该第一通道14、第二通道15和第三通道16对接形成上述第一导电通道17。
在本实施例中，上述第一导电通道17被设置为：上述加热用导线501和静电吸附用导线502自上述下接触面616竖直向上延伸至中心部613中，并沿水平方向穿过直筒筒壁，并延伸至外环部614中，最后竖直向上自上接触面615延伸出去，并与基座本体中相应的接口连接。优选的，对应不同功能的第一部件25，多条第一导电通道17在第一绝缘件618中沿竖直方向分层设置，以避免不同的第一部件25相互干扰。进一步说，多条上述第一导电通道17在中心部613和外环部614中水平延伸的部分的高度不同，以实现分层布置。例如，针对上述加热用导线501和静电吸附用导线502，通过分层设置，可以减少输送交流电的上述加热用导线501对输送直流电的静电吸附用导线502的干扰。另外，根据静电吸附用导线502 和加热用导线501的供电电压的不同(通常，直流电压为2400V，交流电压为220V)，可以使对应加热用导线501的第一导电通道设置在对应静电吸附用导线502的第一导电通道的下层，以使加热用导线501更靠近接地位置，以保证加热用导线501能够充分的与地绝缘隔离。另外，图4所示的多条第一导电通道17的布置方式满足如图9所示的形式：多条加热用导线501围绕中心部613的轴线对称分布；静电吸附用导线502为至少一条，且位于多条加热用导线501的内侧。
作为上述第一引入分部61的一个变形，如图10所示，上述第一引入分部61包括射频套管617和第一绝缘件618，其中，射频套管617为锥筒，该锥筒的上端直径大于锥筒的下端直径，即，锥筒的形状类似于“碗”状，以将第一绝缘件618容纳在其中。并且，锥筒的上端617a与基座本体电导通，并且锥筒的上端617a可以内嵌在基座本体中，以实现锥筒与基座本体的良好电接触。锥筒的下端617b延伸至绝缘盘51的下表面，且与第二引入分部62连接。第一绝缘件618内嵌在锥筒中，且与该锥筒的形状相吻合，即，也为“碗”状，以实现对加热用导线501和静电吸附用导线502的固定，同时使二者均与上述射频套管611电绝缘。设置在第一绝缘件618中的第一导电通道17的结构和布置方式与前述第一导电通道相同，在此不再赘述。
如图6A和图6B所示，第二引入分部62包括第一射频导管621和第二绝缘件622，其中，第一射频导管621用作射频导电部件，其上端与射频套管611的下端连接，具体连接方式如图6A和图6B所示，第一射频导管621的上端套设在射频套管611的下端外周壁上，二者可以通过螺钉固定连接。并且，在第一射频导管621的上端内周壁与射频套管611的下端外周壁之间设置有弹性导电片624，用以加强二者之间的电接触，从而实现良好的电导通。第一射频导管621呈圆弧状，且下端沿屏蔽套管53的圆弧形轴线延伸，并与第三引入分部63连接。
第二绝缘件622填充在第一射频导管621中，且与上述第一绝缘件相类似的，第二绝缘件622近似充满第一射频导管621的内部空间，以实现对加热用导线501和静电吸附用导线502的固定，同时使二者均与第一射频导管621电绝缘。而且，第二绝缘件622的第一端面与第一引入分部61 相对，第二绝缘件622的第二端面与第三引入分部63相对。并且，在第二绝缘件622中形成有多条第二导电通道18，该第二导电通道18沿第一射频导管621的轴线设置，并且第二导电通道18的一端延伸至第二绝缘件622的第一端面，另一端自上述第一端面延伸至第二端面；上述加热用导线501和静电吸附用导线502一一对应地穿过各个第二导电通道18，且多条第二导电通道的布置方式与图9中示出的第一导电通道的布置方式一致。
另外，上述加热用导线501和静电吸附用导线502在第二导电通道中的部分与在第一导电通道中的部分的连接方式具体为：如图6C所示，上述加热用导线501和静电吸附用导线502在第二导电通道中的部分的端部设置有插片623，与之相对应的，上述加热用导线501和静电吸附用导线502在第一导电通道中的部分的端部设置有插口(图中未示出)，通过插片623和插口相配合，来实现上述加热用导线501和静电吸附用导线502在第二导电通道中的部分与在第一导电通道中的部分相互电导通。
优选的，上述屏蔽套管53的内径是第二引入分部62的外径的2～6倍，以使电磁屏蔽空间55足够宽，从而避免屏蔽套管53干涉第二引入分部62中的射频导电部件(即，第一射频导管621)。另外，优选的，第二引入分部62的外径的取值范围在15～50mm，以为布置不同功能的第一部件25提供足够的空间。上述第三引入分部63的外径可以与第二引入分部62的外径相同。
如图7和图8所示，第三引入分部63包括第二射频导管631和第三绝缘件632，其中，第二射频导管631用作射频导电部件，其一端与第二引入分部62连接，具体连接方式可以与图6C示出的第一射频导管621的上端与射频套管611的下端的连接方式相同。第二射频导管631的另一端沿上述第一通孔23的轴线水平延伸至下电极机构的外部。
第三绝缘件632设置在第二射频导管631中，且第三绝缘件632近似充满第二射频导管631的内部空间，以实现对加热用导线501和静电吸附用导线502的固定，同时使二者均与第二射频导管631电绝缘。该第三绝缘件632的第一端面与第二引入分部相对，即与上述第二绝缘件622的第二端面(朝向第二通孔23的一端)相对。并且，在第三绝缘件632中形 成有多条第三导电通道19，每条第三导电通道19沿第二射频导管631的轴线设置，并且第三导电通道19自第三绝缘件632的上述第一端面延伸至其第二端面。上述加热用导线501和静电吸附用导线502一一对应地穿过各个第三导电通道19，并自第三绝缘件632的第二端面伸出。另外，多条第三导电通道的布置方式与图9中示出的第一导电通道的布置方式一致。
另外，如图1A所示，第一屏蔽模组还包括第一绝缘环531，其设置在屏蔽套管53的内壁上，用于固定第二引入分部62，且使第二引入分部62与屏蔽套管53相隔离，从而保证第二引入分部62与屏蔽套管53之间电绝缘。该第一绝缘环531可以是闭合的环体，或者也可以由环绕屏蔽套管53的内壁间隔设置的多个分体。第二引入分部62穿过第一绝缘环531的环孔。在实际应用中，第一绝缘环531也可以为多个，且多个第一绝缘环531沿屏蔽套管53的轴向间隔设置。
与上述相类似的，第一屏蔽模组还包括第二绝缘环231，其设置在第二通孔23的内壁上，用于固定第三引入分部63，且使第二引入分部63与第一延伸部21相隔离。具体地，如图1A所示，第二绝缘环231为多个，且沿第二通孔23的轴向间隔设置，第三引入分部63依次穿过多个第二绝缘环231的环孔。当然，在实际应用中，第二绝缘环231也可以根据具体情况设定为一个。
综上所述，本公开提供的下电极机构，其通过将下电极腔形成相互隔离的电磁屏蔽空间和非电磁屏蔽空间，可以防止电磁屏蔽空间内的第一部件受到来自非电磁屏蔽空间内的第二部件的干扰，从而不仅可以避免因射频干扰导致的电场均匀性受到影响，而且借助电磁屏蔽空间还可以减少射频泄漏，从而可以提高射频稳定性。
本公开另一实施例还提供了一种反应腔室，请一并参阅图2、图11和图12，在反应腔室100的上方设置有射频线圈103，其通过匹配器104与射频电源(图中未示出)电连接，并且在反应腔室100内设置有下电极机构200，该下电极机构200采用了本公开上一实施例提供的下电极机构。
反应腔室的侧壁3形成有水平设置的第三通孔30和第四通孔31。第三通孔30与上电极机构的第一通孔23连通，构成第一引入通道41；第四通孔31与上电极机构的第二通孔24连通，构成第二引入通道42。电磁屏 蔽空间55和非电磁屏蔽空间20分别通过第一引入通道41和第二引入通道42与外界连通。第三引入分部63通过第一引入通道41伸出至反应腔室外部，第二部件26通过第二引入通道42伸出至反应腔室外部。
在本实施例中，如图2所示，下电极机构还包括第二屏蔽模组43，该第二屏蔽模组43设置在反应腔室的外部，且形成第二屏蔽腔54，该第二屏蔽腔54封闭上述第一引入通道41与外界连通的外端。具体地，该第二屏蔽腔54呈盒状，且罩设在反应腔室侧壁3的第三通孔30外侧，从而可以进一步减小射频泄漏。在实际应用中，反应腔室的侧壁3接地，上述第二屏蔽腔54的腔体通过该侧壁3接地，并且优选的，在反应腔室的侧壁3与第二屏蔽腔54的腔体的连接处设置有弹性导电片，以提高第二屏蔽腔54的接地效果。
第二屏蔽腔54具有将第一部件25引入的开口。该开口包括用于引入射频导电部件的射频开口541、用于引入加热用导线501和静电吸附用导线502的导线开口542。由第一通孔23延伸出的第二射频导管631，通过第二屏蔽腔54上的射频开口541与位于第二屏蔽腔54外部的射频源连接。该射频源包括依次连接的匹配器4和射频电源(图中未示出)。第三绝缘件632第二端面伸出的加热用导线501和静电吸附用导线502，通过导线开口542与位于第二屏蔽腔54外部的电源连接。
在本实施例中，在第二射频导管631的对应第三绝缘件632的第二端面的一端设置有导电柱634，该导电柱634穿过射频开口541与匹配器4连接，具体的连接方式可以为：射频开口541位于与第三绝缘件632的上述第二端面相对的位置处。并且，在第二射频导管631的外周壁上设置有第四通道40，上述加热用导线501和静电吸附用导线502依次通过该第四通道40和导线开口542延伸出去，并与相应的电源连接。通过将上述导线开口542设置在第二射频导管631的外周壁上，可以避免上述加热用导线501和静电吸附用导线502与导电柱634干涉。
优选的，在反应腔室100的侧壁上设置有能够供下电极机构通过的通孔101，该通孔101的外侧设置有侧盖板102，下电极腔的腔体200与该侧盖板102连接。并且，在反应腔室100的底部还设置有水平导轨105和与之滑动连接的连接件，侧盖板与水平导轨105连接。侧盖板102能够向 反应腔室100的外侧移动，以使下电极机构整体移出反应腔室100。在需要对下电极机构200进行维修时，可以通过手动或自动控制等方式将下电极机构整体移出反应腔室100，从而为下电极机构200的维护提供方便。
本公开实施例提供的反应腔室，其通过采用本公开实施例提供的上述上电极机构，不仅可以避免因射频干扰导致的电场均匀性受到影响，而且还可以减少射频泄漏，从而可以提高射频稳定性。
以上描述了本公开的实施例。需要说明的，这些实施例仅用于理解本公开，并不用于限制本公开的保护范围。并且，实施例中的特征，在无特别注明的情况下，在相同或不同实施例中出现的技术特征在不相互冲突的情况下可以组合使用。
还需要说明的是，实施例中提到的方向用语，例如“上”、“下”、“前”、“后”、“左”、“右”等，仅是参考附图的方向，并非用来限制本公开的保护范围。贯穿附图，相同的元素由相同或相近的附图标记来表示。在可能导致对本公开的理解造成混淆时，将省略常规结构或构造。并且图中各部件的形状和尺寸不反映真实大小和比例，而仅示意本公开实施例的内容。
再者，单词“包含”不排除存在未列在权利要求中的部件。位于部件之前的单词“一”或“一个”不排除存在多个这样的部件。
说明书与权利要求中所使用的序数例如“第一”、“第二”、“第三”等的用词，以修饰相应的部件，其本身并不意味着该部件有任何的序数，也不代表某一部件与另一部件的顺序、或是制造方法上的顺序，该些序数的使用仅用来使具有某命名的一部件得以和另一具有相同命名的部件能做出清楚区分。
类似地，应当理解，为了精简本公开并帮助理解各个公开方面中的一个或多个，在上面对本公开的示例性实施例的描述中，本公开的各个特征有时被一起分组到单个实施例、图、或者对其的描述中。然而，并不应将该公开解释成反映如下意图：即所要求保护的本公开要求比在每个权利要求中所明确记载的特征更多的特征。更确切地说，如下面的权利要求书所反映的那样，公开方面在于少于前面公开的单个实施例的所有特征。因此，遵循具体实施方式的权利要求书由此明确地并入该具体实施方式，其中每个权利要求本身都作为本公开的单独实施例。

Claims (24)

  1. 一种下电极机构，包括：
    基座，用于承载被加工工件；
    下电极腔，设置在所述基座下方，包括：相互隔离的电磁屏蔽空间和非电磁屏蔽空间，所述下电极腔的腔体开设有第一通孔和第二通孔，所述电磁屏蔽空间和非电磁屏蔽空间分别通过所述第一通孔和第二通孔与外界连通，以防止所述电磁屏蔽空间内的第一部件受到来自所述非电磁屏蔽空间内的第二部件的干扰。
  2. 根据权利要求1所述的下电极机构，其中，所述下电极腔的腔体包括腔体本体，在所述腔体本体的一侧形成有第一延伸部，在所述第一延伸部中形成有水平设置的第一通孔和第二通孔。
  3. 根据权利要求2所述的下电极机构，其中，在所述腔体本体的与所述第一延伸部相对的另一侧形成有第二延伸部，所述第二延伸部与所述第一延伸部相对于所述基座在径向上的中心线对称。
  4. 根据权利要求1所述的下电极机构，其中，所述下电极机构还包括第一屏蔽模组，所述第一屏蔽模组设置在所述第一通孔的与所述下电极腔连通的内端和所述基座之间，且位于所述下电极腔中，以形成第一电磁屏蔽腔，所述第一电磁屏蔽腔即为所述电磁屏蔽空间；
    所述下电极腔内的位于所述第一电磁屏蔽腔之外的空间即为所述非电磁屏蔽空间。
  5. 根据权利要求4所述的下电极机构，其中，所述第一屏蔽模组包括：
    屏蔽套管，呈圆弧状，其一端设置在所述基座的下方，其另一端与所述第一通孔连通，从而形成所述第一电磁屏蔽腔。
  6. 根据权利要求1所述的下电极机构，其中，所述基座包括由上至下依次设置的基座本体和绝缘盘；
    所述下电极机构还包括引入组件，所述引入组件包括依次连接的第一引入分部、第二引入分部和第三引入分部，其中，
    所述第一引入分部内嵌在所述绝缘盘中；
    所述第二引入分部位于所述电磁屏蔽空间中；
    所述第三引入分部通过所述第一通孔伸出至所述下电极腔的外部。
  7. 根据权利要求6所述的下电极机构，其中，所述第一引入分部包括：
    射频套管，其上端与所述基座本体电连接，其下端延伸至所述绝缘盘的下表面，且与所述第二引入分部连接；
    第一绝缘件，设置在所述射频套管中，且包括与所述基座本体的下表面相接触的上接触面，以及与所述第二引入分部相对的下接触面；并且，在所述第一绝缘件中形成有多条第一导电通道，每条所述第一导电通道自所述上接触面延伸至所述下接触面；各个所述第一部件一一对应地穿过各个所述第一导电通道。
  8. 根据权利要求7所述的下电极机构，其中，所述射频套管为竖直设置的直筒，并且在所述直筒的上端形成有直径小于所述直筒的连接筒，所述连接筒内嵌在所述基座本体中；所述直筒的下端延伸至所述绝缘盘的下表面，且与所述第二引入分部连接；
    所述第一绝缘件包括内嵌在所述直筒中的中心部和环绕设置在所述直筒的外周壁上的外环部；其中，所述中心部的下表面用作所述下接触面；所述外环部的上表面用作所述上接触面；
    在所述中心部中形成有第一通道，在所述直筒的筒壁中形成第二通道，在所述外环部中形成有第三通道，所述第一通道、第二通道和第三通道对接形成所述第一导电通道。
  9. 根据权利要求8所述的下电极机构，其中，多条所述第一导电通道在所述第一绝缘件中沿竖直方向分层设置。
  10. 根据权利要求9所述的下电极机构，其中，所述多条第一导电通道包括：至少一个对应于加热用导线的导电通道、以及至少一个对应于静电吸附用导线的导电通道；
    所述对应于加热用导线的导电通道位于对应于静电吸附用导线的导电通道的下层。
  11. 根据权利要求7所述的下电极机构，其中，所述射频套管为锥筒，所述锥筒的上端直径大于所述锥筒的下端直径；并且，所述锥筒的上端与 所述基座本体电导通，所述锥筒的下端延伸至所述绝缘盘的下表面，且与所述第二引入分部连接；
    所述第一绝缘件内嵌在所述锥筒中，且与所述锥筒的形状相吻合。
  12. 根据权利要求6所述的下电极机构，其中，所述第二引入分部包括：
    第一射频导管，所述第一射频导管呈圆弧状，且所述第一射频导管的上端与所述第一引入分部连接，所述第一射频导管的下端与所述第三引入分部连接；
    第二绝缘件，其设置在所述第一射频导管中，且所述第二绝缘件的第一端面与所述第一引入分部相对，所述第二绝缘件的第二端面与所述第三引入分部相对；在所述第二绝缘件中形成有多条第二导电通道，每条所述第二导电通道沿所述第一射频导管的轴线设置，并且所述第二导电通道自所述第一端面延伸至所述第二端面；各个所述第一部件一一对应地穿过各个所述第二导电通道。
  13. 根据权利要求6所述的下电极机构，其中，所述第三引入分部包括：
    第二射频导管，所述第二射频导管的一端与所述第二引入分部连接，所述第二射频导管的另一端沿所述第一通孔的轴线水平延伸至所述下电极腔的外部；
    第三绝缘件，其设置在所述第二射频导管中，且所述第三绝缘件的第一端面与所述第二引入分部相对；并且，在所述第三绝缘件中形成有多条第三导电通道，每条所述第三导电通道沿所述第二射频导管的轴线设置，并且所述第三导电通道自所述第三绝缘件的第一端面延伸至所述第三绝缘件的第二端面；各个所述第一部件一一对应地穿过各个所述第三导电通道，并自所述第三绝缘件的第二端面伸出。
  14. 根据权利要求13所述的下电极机构，其中，所述第二射频导管的对应第三绝缘件第二端面的一端设置有导电柱；
    所述第二射频导管的位于所述第三绝缘件第二端面与所述导电柱之间的侧壁开设有第四通道，自所述第三绝缘件第二端面伸出的所述第一部件由所述第四通道向外延伸。
  15. 根据权利要求1所述的下电极机构，其中，所述第一部件包括多条加热用导线和至少一条静电吸附用导线，其中，
    所述多条加热用导线围绕所述电磁屏蔽空间的轴线对称分布；
    所述至少一条静电吸附用导线位于所述多条加热用导线的内侧。
  16. 根据权利要求6所述的下电极机构，其中，所述电磁屏蔽空间的内径是所述第二引入分部的外径的2～6倍。
  17. 根据权利要求16所述的下电极机构，其中，所述第二引入分部的外径的取值范围在15～50mm。
  18. 根据权利要求6所述的下电极机构，其中，所述绝缘盘的厚度的取值范围在60～300mm。
  19. 根据权利要求6至14中任一项权利要求所述的下电极机构，其中，所述下电极机构还包括：
    至少一个第一绝缘环，所述第三引入分部通过所述第一绝缘环固定于所述电磁屏蔽空间内壁，实现与所述电磁屏蔽空间内壁的隔离；
    和/或，
    至少一个第二绝缘环，所述第三引入分部通过所述第二绝缘环固定于所述第一通孔内壁，实现与所述第一通孔内壁的隔离。
  20. 一种反应腔室，其特征在于，在所述反应腔室内设置有权利要求1-19任意一项所述的下电极机构。
  21. 根据权利要求20所述的反应腔室，其中，所述下电极机构与所述反应腔室连接，所述反应腔室形成有第三通孔和第四通孔，所述第三通孔与所述第一通孔连通，形成第一引入通道；所述第四通孔与所述第二通孔连通，形成第二引入通道；
    所述第一部件通过所述第一引入通道伸出至所述反应腔室的外部，所述第二部件通过所述第二引入通道伸出至所述反应腔室的外部。
  22. 根据权利要求21所述的反应腔室，其中，所述下电极机构还包括第二屏蔽模组，所述第二屏蔽模组设置在所述反应腔室的外部，且形成封闭所述第一引入通道与外界连通的外端的第二屏蔽腔。
  23. 根据权利要求21所述的反应腔室，其中，所述下电极腔的腔体与所述反应腔室的侧壁连接，所述第三通孔和第四通孔形成于所述反应腔 室的侧壁。
  24. 根据权利要求21所述的反应腔室，其中，在所述反应腔室的侧壁上设置有第五通孔，所述第五通孔的外侧设置有侧盖板，所述下电极腔的腔体与所述侧盖板连接，所述第三通孔和第四通孔形成于所述侧盖板；
    在所述反应腔室的底部设置有水平导轨，所述侧盖板与所述水平导轨连接；
    所述侧盖板能够向所述反应腔室的外侧移动，以使所述下电极机构整体移出所述反应腔室。
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