WO2018232793A1 - 基于喷墨打印技术的像素结构及其制作方法 - Google Patents

基于喷墨打印技术的像素结构及其制作方法 Download PDF

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WO2018232793A1
WO2018232793A1 PCT/CN2017/092448 CN2017092448W WO2018232793A1 WO 2018232793 A1 WO2018232793 A1 WO 2018232793A1 CN 2017092448 W CN2017092448 W CN 2017092448W WO 2018232793 A1 WO2018232793 A1 WO 2018232793A1
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layer
anode
pixel
anode layer
pixel structure
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PCT/CN2017/092448
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English (en)
French (fr)
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方俊雄
吴元均
吕伯彦
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深圳市华星光电技术有限公司
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Priority to US15/562,693 priority Critical patent/US10454031B2/en
Publication of WO2018232793A1 publication Critical patent/WO2018232793A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels

Definitions

  • the present invention relates to the field of OLED (Organic Light-Emitting Diode) manufacturing, and in particular to a pixel structure based on inkjet printing technology and a method of fabricating the same.
  • OLED Organic Light-Emitting Diode
  • OLED Organic Light-Emitting Diodes
  • organic electroluminescent display also known as organic electroluminescent display
  • OLED Organic Light-Emitting Diodes
  • the OLED display panel of the prior art generally includes an anode, an organic functional layer and a cathode which are sequentially formed on the substrate, wherein the organic functional layer generally comprises a hole injection layer provided on the anode and a hole provided on the hole injection layer. a transport layer, a light-emitting layer provided on the hole transport layer, an electron transport layer provided on the light-emitting layer, and an electron injection layer provided on the electron transport layer.
  • the luminescence principle of the OLED display panel is that the semiconductor material and the organic luminescent material are driven by an electric field, causing luminescence by carrier injection and recombination.
  • inkjet printing Ink-Jet Printing
  • the cost has a big advantage.
  • the pixel design of the conventional RGB three-color sub-pixel unit adjacent arrangement RGB strip Side by Side
  • the number of sub-pixel units Due to the increasing resolution of the display panel, the number of sub-pixel units is increasing, and the size of the sub-pixel unit is getting smaller and smaller, so that the inkjet printing device (Ink-Jet Printer) can be inked in the sub-pixel unit.
  • the area of operation is small.
  • the accuracy of existing inkjet printing devices Ink-Jet Printers
  • FIG. 2a is a schematic enlarged view of a single sub-pixel structure of FIG. 2a
  • FIG. 2c is a cross-sectional view taken along line A-A of FIG. 2b.
  • the two-in-one (2in1) pixel process is to align two adjacent sub-pixel structures of the same color on the substrate 1, two adjacent identical colors.
  • the anode 2 of the sub-pixel structure is separated by a dielectric layer 3, and a pixel range defining structure (Bank) 4 is disposed on the anode 2, and a pixel range defining structure (Bank) 4 is used to define the ink ejection region.
  • a plurality of nozzles of an ink-jet printing apparatus are used to drop a functional material ink into an ink-jet area defined by a pixel range defining structure (Bank) 4, and then a desired film 5 is obtained by drying.
  • a pixel range defining structure Bank 4 4
  • the process forms the anode 2 on the substrate 1, and then the anode needs to be etched and the dielectric layer 3 is formed. Therefore, the process is complicated, and due to the dielectric layer 3 and the pixel range defining structure ( Bank 4 differs in the hydrophilic and hydrophobic properties of the functional material ink, which tends to cause uneven thickness of the functional material ink in the inkjet region.
  • the present invention provides a pixel structure manufacturing method based on inkjet printing technology, comprising the following steps:
  • Step S1 forming an anode layer on the substrate by using a metal oxide semiconductor material, and patterning the anode layer;
  • Step S2 forming a photoresist layer on the anode layer and patterning, and the patterned photoresist layer partially covers the anode layer;
  • Step S3 Conducting a portion of the anode layer not covered by the photoresist layer in step S2, and then removing the photoresist layer;
  • Step S4 forming a pixel defining layer on the anode layer, forming a plurality of spaced through holes on the pixel defining layer, wherein the anode layer is exposed at the through hole, and the exposed anode layer is a defined pixel region;
  • Step S5 in the pixel area described in step S4, inkjet printing forms an organic functional layer;
  • part of the anode layer which is conductorized is a conductor area
  • a part of the anode layer which is not conductorized is a semiconductor region
  • a central portion of each of the pixel regions is a semiconductor region.
  • the metal oxide semiconductor material in the step S1 is indium gallium zinc oxide, indium tin zinc oxide, indium gallium tin zinc oxide or indium aluminum oxide.
  • the photoresist layer in step S2 is formed by photoresist coating.
  • the patterned photoresist layer in step S2 is a strip structure arranged in parallel at intervals.
  • step S3 the method of plasma bombardment or ion implantation is used for conducting.
  • the pixel defining layer in step S4 is formed by coating an acrylic material or a polyimide resin (PI).
  • the organic functional layer in step S5 includes a hole injection layer, a hole transport layer, and a light-emitting layer which are sequentially disposed on the anode layer.
  • Step S6 The electron transport layer, the electron injection layer and the cathode layer are sequentially formed on the light-emitting layer described in the step 5.
  • the electron transport layer, the electron injection layer, and the cathode layer are formed by an evaporation method.
  • a pixel structure based on an ink jet printing technique the pixel structure being fabricated by the fabrication method described above.
  • a metal oxide semiconductor material is used as a material for forming an anode layer, and the anode layer is divided into a conductor region and a semiconductor region by a conducting process.
  • the semiconductor region has the same function as the dielectric layer of the prior art.
  • the manufacturing method in the invention avoids the formation of the dielectric layer, so the fabrication process is simple, and the obtained organic functional layer film layer formed by inkjet is uniform, which effectively improves the quality of the product.
  • FIG. 1 is a schematic diagram of a pixel design manner of adjacent arrangement of RGB three-color sub-pixel units in the prior art
  • 2a is a schematic diagram of a novel two-in-one (2in 1) pixel design
  • FIG. 2b is a schematic enlarged view of the structure of a single sub-pixel in FIG. 2a;
  • Figure 2c is a cross-sectional view taken along line A-A of Figure 2b;
  • FIG. 3 is a flow chart of a method for fabricating a pixel structure based on an inkjet printing technique in an embodiment of the present invention
  • step S1 is a schematic structural diagram of step S1 in the embodiment of the present invention.
  • FIG. 6 are schematic structural diagrams of step S2 and step S3 in the embodiment of the present invention.
  • FIG. 7 is a schematic structural diagram of step S4 in the embodiment of the present invention.
  • step S5 is schematic diagrams showing the structure of step S5 in the implementation of the present invention.
  • FIG. 3 is a flow chart of a method for fabricating a pixel structure based on an inkjet printing technology in the embodiment. As shown in FIG. 3, the manufacturing method includes the following steps:
  • Step S1 forming an anode layer on the substrate by using a metal oxide semiconductor material, and patterning the anode layer;
  • Step S2 forming a photoresist layer on the anode and patterning, and the patterned photoresist layer partially covers the anode layer;
  • Step S3 Conducting a portion of the anode layer not covered by the photoresist layer, and then removing the photoresist layer;
  • Step S4 forming a pixel defining layer on the anode layer in step S3, forming a plurality of spaced through holes on the pixel defining layer, the anode layer is exposed at the through hole, and the exposed anode layer is a defined pixel region ;
  • Step S5 in the sub-pixel region described in step S4, inkjet printing forms an organic functional layer;
  • part of the anode layer which is conductorized is a conductor area
  • a part of the anode layer which is not conductorized is a semiconductor region
  • a central portion of each of the pixel regions is a semiconductor region.
  • the material used for the anode layer in this embodiment is a metal oxide semiconductor material; preferably, the metal oxide semiconductor material may be Indium Gallium Zinc Oxide, Indium Tin Zinc Oxide, Indium Tin Zinc Oxide (IGZO) ITZO, Indium Tin Zinc Oxide), Indium Gallium Tin Zinc Oxide or Indium Aluminium Oxide (IAO).
  • the metal oxide semiconductor material may be Indium Gallium Zinc Oxide, Indium Tin Zinc Oxide, Indium Tin Zinc Oxide (IGZO) ITZO, Indium Tin Zinc Oxide), Indium Gallium Tin Zinc Oxide or Indium Aluminium Oxide (IAO).
  • FIG. 5 and FIG. 6 are schematic diagrams showing the structure of step S2 and step S3 of the embodiment.
  • a photoresist layer is formed on the anode layer and patterned, and the patterned photoresist layer 22 is formed.
  • the patterned photoresist layer 22 partially covers the anode layer 21, and conductors a portion of the anode layer not covered by the patterned photoresist layer.
  • the conductorization process is illustrated by an arrow, and the conductor process is performed. It can be carried out by plasma bombardment or ion implantation.
  • the photoresist layer 22 is removed, and a schematic structural view as shown in FIG. 6 is obtained, in which a portion of the anode layer that is conductorized is the conductor region 211, and a portion of the anode layer that is not conductorized is the semiconductor region 212.
  • the photoresist layer 22 may be formed by coating with a photoresist.
  • a photoresist may be used in the present invention so that the covered portion of the anode layer is not electrically conductive. Both can be used to fabricate the photoresist layer in the embodiments of the present invention.
  • FIG. 7 is a schematic structural diagram of step S4 in the embodiment of the present invention.
  • a pixel defining layer 23 is formed on the anode layer 21, and a plurality of spaced through holes 231 are formed in the pixel defining layer, and the through holes 231 are formed.
  • the anode layer 21 is exposed, and the exposed portion of the anode layer 21 is a defined pixel region; the pixel defining layer except the through hole is a dam bank 232, and the dam bank 232 surrounds the through hole 231 so as to be in the through hole
  • a pixel region is structurally formed in which an organic functional layer forming operation is performed by inkjet printing.
  • the pixel defining layer 23 may be formed of an acrylic material or a polyimide resin (PI).
  • the acrylic material can be:
  • the polyimide resin can be:
  • the specific structural formulas of the materials forming the pixel defining layer are merely exemplified, and are not intended to be specific limitations of the scope of the present invention. Those skilled in the art will appreciate that the present invention can be applied to the present invention as long as it can function as a pixel defining layer. .
  • the general requirements for the material of the pixel defining layer in the present invention are: such materials can be patterned using a photolithography process, have low water absorption properties after high temperature curing, and the surface of the film layer is inkjet printed (Ink -jet ink) has hydrophobicity, which can effectively limit ink (Ink) in the pixel definition area, wherein the ink is a functional material ink.
  • the film formation and patterning process of the anode layer 21 in step S1, the photoresist layer 22 in step S2, and the pixel defining layer in step S4 can be achieved by conventional techniques in the art, for example, exposure development technology (PEP,
  • PEP exposure development technology
  • the photo engraving process is generally also referred to as photolithography, and the film is formed and patterned.
  • FIG. 8 and FIG. 9 are schematic diagrams showing the structure of step S5 in the embodiment of the present invention.
  • inkjet printing forms an organic functional layer; specifically, in this embodiment, as shown in FIG.
  • the inkjet printer 30 inkjets a functional material ink 240 into the pixel area, a schematic of which is an ink jet process in FIG.
  • a structure as shown in FIG. 9 is obtained through a drying process in which an organic functional layer 24 is formed in a pixel region defined by the pixel defining layer 23.
  • the organic functional layer may include a multilayer structure, for example, a hole injection layer (HIL), a hole transport layer (HTL), and an emission layer (EML) which are sequentially formed upward from the anode layer.
  • HIL hole injection layer
  • HTL hole transport layer
  • EML emission layer
  • one or both of the hole injection layer (HIL), the hole transport layer (HTL), and the light-emitting layer (EML) may be formed by an evaporation process if required for actual production.
  • step S6 may be further included: an electron transport layer (ETL), an electron injection layer (EIL), and a cathode layer are sequentially formed on the light emitting layer described in step 5.
  • an electron transport layer (ETL), an electron injection layer (EIL), and a cathode layer may be formed by an evaporation process commonly used in the prior art.
  • the inkjet printing method is preferred.
  • each pixel structure unit actually includes two faces The same sub-pixel structural unit.
  • the semiconductor region 212 of the anode layer is a divided region of two sub-pixel structural units, and the semiconductor separates the anode layers of the two sub-pixel structural units, thereby realizing that the two sub-pixel structural units do not affect each other. Therefore, preferably, the patterned photoresist layer 22 in step S2 is a strip structure arranged in parallel at intervals.
  • the thickness of the organic functional layer film formed on the anode layer 21 is uniform.
  • the pixel structure based on the inkjet printing technology and the manufacturing method thereof improve the uniformity of the film thickness on the basis of the application of the existing inkjet printing device to meet the requirements of the high-resolution product, thereby improving the product quality.
  • Another embodiment of the present invention is a pixel structure based on ink jet printing technology which is produced by the method of the embodiment of the present invention.
  • 9 can also be regarded as a schematic diagram of the pixel structure in the present embodiment.
  • the pixel structure based on the inkjet printing technology includes the substrate 20, the anode layer 21, the pixel defining layer 23, and the organic function which are sequentially disposed.
  • the anode layer 21 includes a semiconductor region 212 and a conductor region 211.
  • the pixel defining layer 23 includes a plurality of spaced-apart vias 231 and a dam structure 232 surrounding the vias.
  • the anode layer 21 is exposed at the vias 231.
  • the exposed portion of the anode layer is a defined pixel region, and the semiconductor region 212 is located at a middle portion of the pixel region; the organic functional layer 24 is formed in the pixel region by inkjet printing.
  • the organic functional layer 24 may include a multilayer structure, for example, a hole injection layer (HIL), a hole transport layer (HTL), and an emission layer (EML) which are sequentially formed upward from the anode layer 21.
  • HIL hole injection layer
  • HTL hole transport layer
  • EML emission layer
  • an electron transport layer ETL
  • an electron injection layer EIL
  • a cathode layer are sequentially formed on the light emitting layer.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

提供一种基于喷墨打印技术的像素结构及其制作方法，该像素结构及其制作方法采用金属氧化物半导体材料作为阳极层（21）的制作材料，采用导体化过程将阳极层分为导体区（211）和半导体区（212）。其中半导体区与现有技术中的介电层3具有相同的作用。该制作方法避免了介电层的形成，因此制作过程简单，并且得到的通过喷墨形成的有机功能层膜层均匀，有效提升了产品的品质。

Description

基于喷墨打印技术的像素结构及其制作方法
相关申请的交叉引用
本申请要求享有于2017年06月19日提交的名称为“基于喷墨打印技术的像素结构及其制作方法”的中国专利申请CN201710464655.8的优先权，该申请的全部内容通过引用并入本文中。
技术领域
本发明涉及OLED(Organic Light-Emitting Diode，有机发光二极管)制造领域，具体涉及基于喷墨打印技术的像素结构及其制作方法。
背景技术
有机发光二极管(Organic Light-Emitting Diodes，OLED)显示器，又称有机电致光发光显示器，具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、宽视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
现有技术中的OLED显示面板一般包括依次形成于基板上的阳极、有机功能层和阴极，其中有机功能层一般包括设于阳极上的空穴注入层、设于空穴注入层上的空穴传输层、设于空穴传输层上的发光层、设于发光层上的电子传输层、设于电子传输层上的电子注入层。OLED显示面板的发光原理为半导体材料和有机发光材料在电场驱动下，通过载流子注入和复合导致发光。具体的，在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子传输层和空穴传输层，电子和空穴分别经过电子传输层和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光分子激发，后者经过辐射弛豫而发出可见光。
OLED显示面板中有机功能层以及阴极金属层薄膜最为传统的制作方式是真空蒸镀。随着工艺的发展，一种相对于真空蒸镀方式更具优势的喷墨打印(Ink-Jet Printing)逐渐被各大生产厂家所采用。
在OLED的制造工艺上，喷墨打印(Ink-Jet Printing)相比于蒸镀在材料利用率以 及成本上有较大的优势。但是随著显示面板的分辨率日益提高，如图1所示为以往常用的RGB三色子像素单元相邻排列(RGB strip Side by Side)的像素设计方式。由于显示面板的分辨率日益提高，子像素单元的个数越来越多，子像素单元的尺寸越来越小，因此在子像素单元内可供喷墨打印设备(Ink-Jet Printer)喷墨操作的区域较小。现有的喷墨打印设备(Ink-Jet Printer)的精准度逐渐无法满足显示面板生产的需求。因此，喷墨打印设备(Ink-Jet Printer)的极限无法满足制作较高分辨率的产品的要求。为了克服这一技术问题，出现了如图2a所示的新型二合一(2in 1)的像素设计，可以有效增加喷墨打印设备(Ink-Jet Printer)喷墨的区域，因此可以满足制作更高分辨率的产品的需求。如图2b所示为图2a中的单个的子像素结构的放大结构示意图，图2c是图2b的A-A向剖视示意图。为了清楚的说明现有技术中存在的问题，在图2b和图2c仅仅示意出了基板、阳极、介电层、像素范围界定结构以及有机功能层，其他部分的结构不做具体的示意，但本领域技术人员可根据需要进行具体的设定。如图2b和图2c所示，这种二合一(2in 1)的像素工艺是将两个相邻相同颜色的子像素结构排列在一起，在基板1上，两个相邻的相同颜色的子像素结构的阳极2中间用介电层3分隔开，在阳极2上设置有像素范围界定结构(Bank)4，像素范围界定结构(Bank)4用于定义喷墨区域。喷墨过程中利用喷墨打印设备(Ink-Jet Printer)的多个喷嘴将功能材料墨水滴入像素范围界定结构(Bank)4定义的喷墨区域，之后通过干燥获得所需薄膜5。此种工艺存在一定的技术问题，首先该工艺在基板1上形成阳极2，然后需要对阳极进行蚀刻并形成介电层3，因此过程较为复杂，并且由于介电层3与像素范围界定结构(Bank)4对功能材料墨水(ink)的亲疏水特性不同，容易造成功能材料墨水(ink)在喷墨区域内的膜厚不均匀。
发明内容
为解决现有技术中存在的问题，本发明提供一种基于喷墨打印技术的像素结构制作方法，包括以下步骤：
步骤S1：采用金属氧化物半导体材料在基板上成膜形成阳极层，阳极层图形化；
步骤S2：在阳极层上形成光阻层并图形化，图形化的光阻层对阳极层进行局部覆盖；
步骤S3：对步骤S2中的未被光阻层覆盖的部分阳极层进行导体化，然后去除光阻层；
步骤S4：在阳极层上形成像素定义层，在像素定义层上形成多个间隔设置的通孔，通孔处阳极层暴露，暴露部分的阳极层为限定出的像素区域；
步骤S5：在步骤S4中所述的像素区域内，喷墨打印形成有机功能层；
其中，被导体化的部分阳极层为导体区，未被导体化的局部阳极层为半导体区，每个所述像素区域中部位置为半导体区。
作为对制作方法的进一步改进，步骤S1中的金属氧化物半导体材料为铟镓锌氧化物、铟锡锌氧化物、铟镓锡锌氧化物或铟铝氧化物。
作为对制作方法的进一步改进，步骤S2中的光阻层由光刻胶涂布形成。
作为对制作方法的进一步改进，步骤S2中所述图形化的光阻层为间隔平行设置的条状结构。
作为对制作方法的进一步改进，步骤S3中采用等离子体轰击或离子注入的方法进行导体化。
作为对制作方法的进一步改进，步骤S4中所述像素定义层由亚克力系材料、聚酰亚胺树脂(polyimide resin，PI)涂布形成。
作为对制作方法的进一步改进，步骤S5中的有机功能层包括由阳极层上依次设置的空穴注入层、空穴传输层和发光层。
作为对制作方法的进一步改进，还包括以下步骤：步骤S6：在步骤5中所述的发光层上依次形成电子传输层、电子注入层和阴极层。
作为对制作方法的进一步改进，所述电子传输层、电子注入层和阴极层采用蒸镀方法形成。
本发明的另一方面，还提供一种基于喷墨打印技术的像素结构，该像素结构由以上所述的制作方法制得。
本发明中的基于喷墨打印技术的像素结构制作方法，采用金属氧化物半导体材料作为阳极层的制作材料，采用导体化过程将阳极层分为导体区和半导体区。其中半导体区与现有技术中的介电层具有相同的作用。本发明中的制作方法避免了介电层的形成，因此制作过程简单，并且得到的通过喷墨形成的有机功能层膜层均匀，有效地提升了产品的品质。
附图说明
在下文中将基于实施例并参考附图来对本发明进行更详细的描述。其中：
图1是现有技术中的一种RGB三色子像素单元相邻排列的像素设计方式示意图；
图2a是一种新型二合一(2in 1)的像素设计方式示意图；
图2b是图2a中的单个子像素结构的放大结构示意图；
图2c是图2b的A-A向剖视示意图；
图3是本发明实施例中的基于喷墨打印技术的像素结构制作方法流程图；
图4是本发明实施例中步骤S1的结构示意图；
图5和图6为本发明实施例中步骤S2和步骤S3的结构示意图；
图7为本发明实施例中的步骤S4的结构示意图；
图8和图9为本发明实施中的步骤S5的结构示意图。
在附图中，相同的部件使用相同的附图标记。附图并未按照实际的比例。
具体实施方式
下面将结合附图对本发明作进一步说明。
如图3所示为本实施例中的基于喷墨打印技术的像素结构制作方法流程图，由图3可以看出该制作方法包括以下步骤：
步骤S1：采用金属氧化物半导体材料在基板上成膜形成阳极层，阳极层图形化；
步骤S2：在阳极上形成光阻层并图形化，图形化的光阻层对阳极层进行局部覆盖；
步骤S3：对未被光阻层覆盖的部分阳极层进行导体化，然后去除光阻层；
步骤S4：在步骤S3中所述的阳极层上形成像素定义层，在像素定义层上形成多个间隔设置的通孔，通孔处阳极层暴露，暴露部分的阳极层为限定出的像素区域；
步骤S5：在步骤S4中所述的子像素区域内，喷墨打印形成有机功能层；
其中，被导体化的部分阳极层为导体区，未被导体化的局部阳极层为半导体区，每个所述像素区域中部位置为半导体区。
下面结合图4至图9对个步骤进行详细的叙述。
图4为步骤S1的结构示意图，如图4所示，首先需要一个基板20，在基板1上形成阳极层21，并对阳极层进行图形化，得到如图4所示的结构示意图。本实施例中阳极层所采用的材料为金属氧化物半导体材料；优选的，所述的金属氧化物半导体材料可以为铟镓锌氧化物(IGZO，Indium Gallium Zinc Oxide)、铟锡锌氧化物(ITZO，Indium Tin Zinc Oxide)、铟镓锡锌氧化物(IGTZO，Indium Gallium Tin Zinc Oxide)或铟铝氧化物(IAO，Indium Aluminium Oxide)。
图5和图6为本实施例步骤S2和步骤S3的结构示意图，首先在阳极层上形成光阻层并进行图形化，图形化的光阻层22。图形化的光阻层22对阳极层21进行局部的覆盖，对未被图形化的光阻层覆盖的部分阳极层进行导体化，如图5中采用箭头对导体化工艺进行示意，导体化工艺可以采用等离子体轰击或离子注入的方法进行。完成导体化之后去除光阻层22，得到如图6所示的结构示意图，其中，被导体化的部分阳极层为导体区211，未被导体化的局部阳极层为半导体区212。
在一些具体的实施例中，光阻层22可以为采用光刻胶采用涂布的方式形成，当然其他方式以及材质只要可以实现本发明中的使得阳极层被覆盖部分不被导体化的作用，均可用于制作本发明实施例中的光阻层。
图7为本发明实施例中的步骤S4的结构示意图，如图7所示，在阳极层21上形成像素定义层23，在像素定义层上形成多个间隔设置的通孔231，通孔231处阳极层21暴露，暴露部分的阳极层21为限定出的像素区域；除去通孔以外的像素定义层为坝结构(bank)232，坝结构(bank)232围绕通孔231，从而在通孔结构上形成像素区域，在该区域中通过喷墨打印的方式进行有机功能层的形成操作。在一些实施例中，其中的像素定义层23可以由亚克力系材料或者聚酰亚胺树脂(polyimide resin，PI)涂布形成。
其中亚克力系材料可以为：聚酰亚胺树脂可以为：
Figure PCTCN2017092448-appb-000002
以上列举出形成像素定义层的材料的具体结构式仅仅作为示例，不做为对本发明保护范围的具体限制，本领域技术人员可知，只要其可以实现作为像素定义层的作用即可应用到本发明中。本发明中对于像素定义层的材料的一般要求为：此类材料可以使用光刻胶工艺(Photolithography)工艺进行图案化，经过高温固化后具有低的吸水特性，膜层表面对喷墨打印(Ink-jet ink)具有疏水特性(hydrophobic)，可以有效将墨水(Ink)限制在像素定义区内，其中所述的墨水为功能材料墨水。
步骤S1中的阳极层21、步骤S2中的光阻层22以及步骤S4中的像素定义层的成膜以及图形化过程可以采用本领域的常规技术手段实现，例如可以采用曝光显影技术(PEP，photo engraving process)一般也称为光刻胶工艺(Photolithography)，成膜并完成图形化，本领域技术人员可以根据需要进行具体的选择，在此不再赘述。
图8和图9为本发明实施中的步骤S5的结构示意图，在步骤S4中所述的像素区域内，喷墨打印形成有机功能层；具体的，本实施例中，如图8所示，喷墨打印机30将功能材料墨水(ink)240喷墨打印到像素区域内，图8中为喷墨过程的示意图。完成喷墨操作之后，经过干燥过程得到如图9所示的结构，其中有机功能层24形成于像素定义层23限定出的像素区域内。
在一些实施例中，其中的有机功能层可以包括多层结构，例如可以为由阳极层向上依次形成的空穴注入层(HIL)、空穴传输层(HTL)和发光层(EML)。当然，如果实际生产的需要，空穴注入层(HIL)、空穴传输层(HTL)和发光层(EML)中的某一层或两层可以采用蒸镀工艺形成。
在一些实施例中，还可以包括步骤S6：在步骤5中所述的发光层上依次形成电子传输层(ETL)、电子注入层(EIL)和阴极层。根据实际的需要，其中的电子传输层(ETL)、电子注入层(EIL)和阴极层可以采用现有技术中常用的蒸镀工艺形成。当然，根据实际的需要，如果形成各层的材料可以采用喷墨打印的方法来形成，优先选用喷墨打印的方法。
本发明中附图中的图4至图9仅仅是示意出单个像素结构，本领域技术人员可知，该方法实际应用于整个面板上的所有像素结构的制作过程。本发明实施例所针对的像素结构的排布方式如图2a所示。每一个像素结构单元实际包括两个颜 色相同的子像素结构单元。其中的阳极层的半导体区212为两个子像素结构单元的分割区，半导体将两个子像素结构单元的阳极层分隔开，从而实现两个子像素结构单元的彼此互不影响。因此，优选的，步骤S2中所述图形化的光阻层22为间隔平行设置的条状结构。
由于半导体区和导体区对于有机功能材料的亲疏性相同，因此在阳极层21上形成的有机功能层膜厚度均匀。本发明实施例中基于喷墨打印技术的像素结构及其制作方法，在应用现有的喷墨打印设备满足高分辨率产品的要求的基础上，提高了膜厚的均匀度，从而提升产品的品质。
本发明中的另一个实施例为基于喷墨打印技术的像素结构，该结构由本发明实施例中的方法制得。图9也可以看做是本实施中的像素结构的示意图，具体的如图9所示，基于喷墨打印技术的像素结构包括依次设置的基板20、阳极层21、像素定义层23和有机功能层24，
其中，所述阳极层21包括半导体区212和导体区211；所述像素定义层23包括多个间隔设置的通孔231以及围绕通孔的坝结构232，所述通孔231处阳极层21暴露，暴露部分的阳极层为限定出的像素区域，所述半导体区212位于所述像素区域中部位置；所述有机功能层24通过喷墨打印的方式形成与所述像素区域内。
在一些实施例中，有机功能层24可以包括多层结构，例如可以为由阳极层21向上依次形成的空穴注入层(HIL)、空穴传输层(HTL)和发光层(EML)。
在一些实施例中，发光层上依次形成电子传输层(ETL)、电子注入层(EIL)和阴极层。
虽然已经参考优选实施例对本发明进行了描述，但在不脱离本发明的范围的情况下，可以对其进行各种改进并且可以用等效物替换其中的部件。尤其是，只要不存在结构冲突，各个实施例中所提到的各项技术特征均可以任意方式组合起来。本发明并不局限于文中公开的特定实施例，而是包括落入权利要求的范围内的所有技术方案。

Claims (20)

  1. 基于喷墨打印技术的像素结构的制作方法，包括以下步骤：
    步骤S1：采用金属氧化物半导体材料在基板上成膜形成阳极层，阳极层图形化；
    步骤S2：在阳极上形成光阻层并图形化，图形化的光阻层对阳极层进行局部覆盖；
    步骤S3：对步骤S2中的未被光阻层覆盖的部分阳极层进行导体化，然后去除光阻层；
    步骤S4：在阳极层上形成像素定义层，在像素定义层上形成多个间隔设置的通孔，通孔处阳极层暴露，暴露部分的阳极层为限定出的像素区域；
    步骤S5：在步骤S4中所述的像素区域内，喷墨打印形成有机功能层；
    其中，被导体化的部分阳极层为导体区，未被导体化的局部阳极层为半导体区，每个所述像素区域中部位置为半导体区。
  2. 根据权利要求1所述的制作方法，其中，步骤S5中的有机功能层包括由阳极层上依次设置的空穴注入层、空穴传输层和发光层。
  3. 根据权利要求2所述的制作方法，其中，还包括以下步骤：
    步骤S6：在步骤5中所述的发光层上依次形成电子传输层、电子注入层和阴极层。
  4. 根据权利要求2所述的制作方法，其中，所述电子传输层、电子注入层和阴极层采用蒸镀方法形成。
  5. 根据权利要求1所述的制作方法，其中，步骤S1中的金属氧化物半导体材料为铟镓锌氧化物、铟锡锌氧化物、铟镓锡锌氧化物或铟铝氧化物。
  6. 根据权利要求1所述的制作方法，其中，步骤S2中的光阻层由光刻胶涂布形成。
  7. 根据权利要求6所述的制作方法，其中，步骤S2中所述图形化的光阻层为间隔平行设置的条状结构。
  8. 根据权利要求1所述的制作方法，其中，步骤S3中采用等离子体轰击或离子注入的方法进行导体化。
  9. 根据权利要求8所述的制作方法，其中，步骤S5中的有机功能层包括由 阳极层上依次设置的空穴注入层、空穴传输层和发光层。
  10. 根据权利要求9所述的制作方法，其中，还包括以下步骤：
    步骤S6：在步骤5中所述的发光层上依次形成电子传输层、电子注入层和阴极层。
  11. 根据权利要求9所述的制作方法，其中，所述电子传输层、电子注入层和阴极层采用蒸镀方法形成。
  12. 根据权利要求1所述的制作方法，其中，步骤S4中所述像素定义层由亚克力系材料或聚酰亚胺树脂涂布形成。
  13. 根据权利要求12所述的制作方法，其中，步骤S5中的有机功能层包括由阳极层上依次设置的空穴注入层、空穴传输层和发光层。
  14. 根据权利要求13所述的制作方法，其中，还包括以下步骤：
    步骤S6：在步骤5中所述的发光层上依次形成电子传输层、电子注入层和阴极层。
  15. 根据权利要求13所述的制作方法，其中，所述电子传输层、电子注入层和阴极层采用蒸镀方法形成。
  16. 基于喷墨打印技术的像素结构，其中，所述像素结构根据以下方法制得：
    步骤S1：采用金属氧化物半导体材料在基板上成膜形成阳极层，阳极层图形化；
    步骤S2：在阳极上形成光阻层并图形化，图形化的光阻层对阳极层进行局部覆盖；
    步骤S3：对步骤S2中的未被光阻层覆盖的部分阳极层进行导体化，然后去除光阻层；
    步骤S4：在阳极层上形成像素定义层，在像素定义层上形成多个间隔设置的通孔，通孔处阳极层暴露，暴露部分的阳极层为限定出的像素区域；
    步骤S5：在步骤S4中所述的像素区域内，喷墨打印形成有机功能层；
    其中，被导体化的部分阳极层为导体区，未被导体化的局部阳极层为半导体区，每个所述像素区域中部位置为半导体区。
  17. 根据权利要求16所述的像素结构，其中，所述像素结构的制作方法的步骤S1中的金属氧化物半导体材料为铟镓锌氧化物、铟锡锌氧化物、铟镓锡锌氧化物或铟铝氧化物。
  18. 根据权利要求16所述的像素结构，其中，所述像素结构的制作方法的步骤S3中采用等离子体轰击或离子注入的方法进行导体化。
  19. 根据权利要求16所述的像素结构，其中，所述像素结构的制作方法的步骤S5中的有机功能层包括由阳极层上依次设置的空穴注入层、空穴传输层和发光层。
  20. 根据权利要求19所述的像素结构，其中，所述像素结构的制作方法还包括以下步骤：
    步骤S6：在步骤5中所述的发光层上依次形成电子传输层、电子注入层和阴极层。
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