WO2018228133A1 - 阻抗匹配方法、阻抗匹配装置及等离子体产生设备 - Google Patents

阻抗匹配方法、阻抗匹配装置及等离子体产生设备 Download PDF

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Publication number
WO2018228133A1
WO2018228133A1 PCT/CN2018/087612 CN2018087612W WO2018228133A1 WO 2018228133 A1 WO2018228133 A1 WO 2018228133A1 CN 2018087612 W CN2018087612 W CN 2018087612W WO 2018228133 A1 WO2018228133 A1 WO 2018228133A1
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WIPO (PCT)
Prior art keywords
impedance
matching
impedance matching
source
level phase
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Ceased
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PCT/CN2018/087612
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English (en)
French (fr)
Inventor
杨京
韦刚
卫晶
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Priority to JP2019569715A priority Critical patent/JP2020527822A/ja
Priority to US16/620,841 priority patent/US10886105B2/en
Priority to KR1020197029956A priority patent/KR102194201B1/ko
Priority to SG11201911896SA priority patent/SG11201911896SA/en
Publication of WO2018228133A1 publication Critical patent/WO2018228133A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H03H7/40—Automatic matching of load impedance to source impedance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Definitions

  • the present disclosure relates generally to electronic circuit technology and, more particularly, to an impedance matching method, an impedance matching device, and a plasma generating device.
  • ICP Inductively Coupled Plasma
  • the device has a simple structure and low cost, and can independently control the RF source that generates the plasma (determining the plasma density) and the RF source of the substrate (determining the energy of the particles incident on the wafer).
  • the RF source of a conventional etching machine device outputs a sinusoidal continuous wave.
  • Pulsed plasma technology is used to reduce the plasma induced damage (PID) caused by continuous wave RF energy, improve the loading effect in the etching process, and significantly improve the etching selectivity (Selectivity). And increase the process adjustment means and window.
  • the output impedance of the RF source is generally 50 ohms
  • the input impedance of the reaction chamber is generally a non-50 ohm impedance value having a real impedance and an imaginary impedance.
  • an object of the present disclosure is at least in part to provide an impedance matching method, an impedance matching device, and a plasma generating device to effectively perform impedance matching.
  • an impedance matching method for matching impedance between a radio frequency source and a load connected to the radio frequency source, wherein the impedance matching method includes:
  • the motor is instructed to stop driving and the RF source is subjected to a frequency sweeping operation.
  • the working mode of the radio frequency source is a pulse bilevel mode, and the pulse bilevel mode includes a high level phase and a low level phase;
  • the automatic matching step is performed
  • the automatic matching step is performed.
  • the power output by the RF source in the high level phase is different from the power output in the low level phase.
  • an impedance matching apparatus for matching an impedance between a radio frequency source and a load connected to the radio frequency source, wherein the impedance matching apparatus comprises:
  • a motor for driving the matched impedance network to provide a certain impedance
  • the controller selectively issues a first instruction or a second instruction in response to the received operational mode of the RF source, wherein the first instruction instructs the motor to drive an impedance matching network to provide a certain impedance;
  • the two instructions instruct the motor to stop driving and the RF source to perform a sweep operation.
  • the working mode of the radio frequency source is a pulse bilevel mode, and the pulse bilevel mode includes a high level phase and a low level phase;
  • the controller issues the first instruction
  • the controller issues the second instruction
  • the controller issues the second instruction
  • the controller issues the first command during the low level phase.
  • the frequency of the RF source may be at least one of 2 MHz, 13.56 MHz, and 60 MHz.
  • the optional RF source can be pulse modulated with a modulation frequency of 10 Hz to 20 kHz and a duty cycle of 10% to 90%.
  • a plasma generating apparatus including a radio frequency source, a load connected to the radio frequency source, and impedance matching for matching impedance between the radio frequency source and a load
  • the device, the impedance matching device uses the above impedance matching device provided by the present invention.
  • the plasma generating device comprises an inductively coupled plasma generating device, a capacitively coupled plasma generating device, a microwave plasma generating device or an electron cyclotron resonance plasma generating device.
  • the plasma generating apparatus can be used in a plasma etching machine.
  • the impedance matching method and the impedance matching device provided by the present invention, a combination of motor drive impedance matching and frequency sweep impedance matching is adopted. Specifically, the automatic matching step or the frequency sweep matching step is selectively performed according to the operating mode of the radio frequency source. Therefore, the unstable and non-repetitive phenomenon caused by the impedance change too fast in the impedance matching process can be effectively avoided, and a large process window and process stability can be realized.
  • the plasma generating apparatus provided by the present invention can realize a large process window and process stability by using the above-mentioned impedance matching device provided by the present invention, and can be applied to a high-precision plasma etching machine.
  • FIG. 1 schematically shows a simplified diagram of a plasma generating apparatus in accordance with an embodiment of the present disclosure
  • FIG. 2 schematically shows a block diagram of a plasma generating apparatus according to an embodiment of the present disclosure
  • FIG. 3 schematically shows a simplified circuit diagram of an impedance matching device in accordance with an embodiment of the present disclosure
  • FIG. 4 schematically illustrates an operational timing diagram in accordance with an embodiment of the present disclosure
  • FIG. 5 schematically illustrates a simplified cross-sectional view of a plasma etch machine in accordance with an embodiment of the present disclosure.
  • FIG. 1 schematically shows a simplified diagram of a plasma generating apparatus in accordance with an embodiment of the present disclosure.
  • the plasma generating apparatus includes a radio frequency (RF) source 101 and a load 105 connected to the RF source 101.
  • the load 105 may include a plasma generating chamber.
  • the RF source 101 is used to provide a certain RF power to excite a variable electric field in the plasma generating chamber.
  • a certain degree of vacuum can be maintained in the plasma generating chamber, and the reaction gas introduced therein can be ionized under the action of a variable electric field to generate a plasma.
  • the plasma generating chamber can operate based on a variety of mechanisms, such as inductively coupled plasma (ICP), capacitively coupled plasma (CCP), microwave plasma, electron cyclotron resonance (ECR) plasma, and the like.
  • ICP inductively coupled plasma
  • CCP capacitively coupled plasma
  • ECR electron cyclotron resonance
  • the output impedance of the RF source 101 is typically 50 ohms, while the input impedance of the plasma generating cavity as its load is typically a non-50 ohm impedance value having a real impedance and an imaginary impedance.
  • an impedance matching device 103 is coupled between the RF source 101 and the plasma generating chamber as a load to match the impedance of the RF source 101 and the plasma generating chamber. The configuration of the impedance matching device 103 will be described in further detail below.
  • FIG. 2 schematically shows a block diagram of a plasma generating apparatus in accordance with an embodiment of the present disclosure.
  • the plasma generating apparatus shown in FIG. 2 also includes an RF source 101, a load (eg, a plasma generating chamber) 105, and an impedance connected between the RF source and the load.
  • Matching device 103 Similar to the plasma generating apparatus described above in connection with FIG. 1, the plasma generating apparatus shown in FIG. 2 also includes an RF source 101, a load (eg, a plasma generating chamber) 105, and an impedance connected between the RF source and the load.
  • Matching device 103 Similar to the plasma generating apparatus described above in connection with FIG. 1, the plasma generating apparatus shown in FIG. 2 also includes an RF source 101, a load (eg, a plasma generating chamber) 105, and an impedance connected between the RF source and the load.
  • Matching device 103 Similar to the plasma generating apparatus described above in connection with FIG. 1, the plasma generating apparatus shown in FIG. 2 also includes an RF source 101, a load (eg, a plasma generating chamber) 105, and an im
  • the impedance matching device 103 is for matching the impedance between the RF source 101 and the load 105 to which the RF source 101 is connected.
  • the impedance matching device 103 includes:
  • a motor 1035 for driving the matched impedance network 1033 to provide a certain impedance
  • the controller selectively issues a first command or a second command in response to the received operating mode of the RF source 101, wherein the first command instructs the motor 1035 to drive the impedance matching network 1033 to provide a certain impedance; the second command indication
  • the motor 1035 stops driving and the RF source 101 performs a frequency sweep operation.
  • the RF source 101 can operate in a pulse level-level mode.
  • RF source 101 can generate RF signals of a certain frequency (eg, 2 MHz, 13.56 MHz, or 60 MHz, preferably 13.56 MHz).
  • PWM Pulse Width Modulation
  • the RF signal can be modulated into a pulse signal with a high level and a low level in one cycle (see (a) in Figure 4). section). This pulse signal helps the plasma to ignite.
  • the pulse signal can have a higher power, such as 1000 W
  • the Low level phase the pulse signal can have less power (not zero), such as 600 W.
  • the modulation signal may have a modulation frequency of about 10 Hz to 20 kHz, and the duty cycle (eg, the ratio of the High Level phase in one cycle) may be about 10% to 90%.
  • the RF source 101 can output a PWM modulated RF signal.
  • the automatic matching step or the sweep matching step can be selectively performed according to the operation mode of the RF source 101.
  • the operating mode of the RF source 101 is the above-described pulse level-level mode
  • in the High level phase an automatic matching step is performed.
  • In the Low level phase a sweep matching step is performed.
  • the working mode of the RF source 101 can be controlled by outputting the working mode information MODE, for example, instructing the RF source 101 to perform a High level phase or a Low level phase.
  • the operational mode information can be output, for example, by a control unit that controls PWM modulation of the RF signal.
  • the sweep matching step can also be performed in the High level phase.
  • an automatic matching step is performed in the Low level phase.
  • the impedance matching device 103 may include an impedance matching degree detector 1031, an impedance matching network 1033, a motor 1035, and a controller 1037.
  • the impedance matching degree detector 1031 can detect the degree of impedance matching between the RF source 101 and the load 105. In theory, when the impedance between the RF source 101 and the load 105 matches, the RF power from the RF source 101 will all be transmitted to the load 105 without the reflected power from the load 105. Thus, in one example, impedance matching detection can be performed by detecting the incident voltage from RF source 101 and the reflected voltage from load 105 and comparing the two (eg, by calculating a standing wave ratio (SWR)). Of course, the present disclosure is not limited thereto, and the impedance matching degree can be detected by other various suitable means. In addition, the impedance matching degree detector 1031 may detect only relevant parameters for deriving the impedance matching degree, and send these parameters to the controller 1037 to determine the impedance matching degree by the controller 1037 without being determined by itself.
  • SWR standing wave ratio
  • An impedance matching network 1033 is coupled between the RF source 101 and the load 105 to provide a variable impedance and thus match the impedance between the RF source 101 and the load 105.
  • the impedance matching network 1033 can include a network of impedance elements (eg, capacitive impedance elements, resistant impedance elements, etc.) connected. At least a portion of these impedance elements can have a variable impedance configuration such that the impedance matching network 1033 can present different impedance values as a whole.
  • the impedance matching network 1033 can include a variable capacitance element.
  • the variable capacitance element may include a rotatable member (eg, a dielectric layer between its plates or plates) that is rotated by the rotatable member to change its capacitance value.
  • the motor 1035 can drive an impedance matching network 1033 (specifically, a variable impedance element such as a variable capacitance element) to provide a certain impedance value.
  • a variable impedance element such as a variable capacitance element
  • the motor 1035 can drive a rotatable member in the variable capacitance element to rotate, thereby changing the capacitance value of the variable capacitance element.
  • Motor 1035 can be, for example, a stepper motor.
  • the controller 1037 can control the overall operation of the impedance matching device 103. According to an embodiment of the present disclosure, the controller 1037 may selectively issue a first command CMD1 for the motor 1035 or a second command CMD2 for the RF source 101 according to an operation mode of the RF source 101.
  • the first command CMD1 may instruct the motor 1035 to drive the impedance matching network 1035 to achieve a certain impedance.
  • Driving information eg, direction of rotation, angle of rotation, etc.
  • the controller 1037 may receive the impedance matching degree detected by the impedance matching degree detector 1031 (for example, represented by SWR) or derive the impedance matching degree according to the parameter detected by the impedance matching degree detector 1031, and match the impedance according to the impedance.
  • the drive information of the motor 1035 is obtained.
  • the motor 1035 can accordingly rotate (eg, advance or retreat) a certain angle based on the received drive information to change (eg, increase or decrease) the impedance value provided by the impedance matching network 1033.
  • controller 1037 can implement control such that SWR changes toward a direction close to 1 until SWR is as close as possible or even equal to 1 (meaning the impedance is perfectly matched).
  • the second command CMD2 may instruct the RF source 101 to perform a frequency sweep operation.
  • the RF signal generator in the RF source 101 can change the frequency of the RF signal it generates within a certain range (eg, from 12.88 MHz to 14.32 MHz) according to the received second command CMD2.
  • the impedance of the impedance matching network 1033 also changes (eg, the impedance of the capacitor and inductor changes with the signal frequency).
  • controller 1037 can implement control such that SWR changes toward a direction close to 1 such that SWR is as close as possible to or equal to one.
  • the motor drive impedance matching operation and the sweep impedance matching operation can be performed alternatively.
  • the controller 1037 may issue the first command CMD1; in the Low level phase, the controller 1037 may issue the second command CMD2. That is, in the High level phase, the impedance matching network 1033 can be driven by the motor 1035 to provide impedance matching (in which case the scanning operation can be stopped), and in the Low level phase, the impedance matching can be provided by the sweep operation of the RF source 101. (At this point, the motor can stop driving, for example, at the end of the last drive).
  • the controller 1037 may issue the first command CMD1, and in the High level phase, the controller 1037 may issue the second command CMD2. That is, in the Low level phase, the impedance matching network 1033 can be driven by the motor 1035 to provide impedance matching (in which case the scanning operation can be stopped), and in the High level phase, the impedance matching can be provided by the sweep operation of the RF source 101. (At this point, the motor can stop driving, for example, at the end of the last drive).
  • FIG. 3 schematically shows a simplified circuit diagram of an impedance matching device in accordance with an embodiment of the present disclosure.
  • an impedance matching network 1033 consisting of an inductive element L and variable capacitance elements C1 and C2 is shown.
  • the variable capacitance elements C1 and C2 are series capacitors and parallel capacitors, respectively, to provide different impedance components.
  • the impedance matching degree detector 1031 can detect the incident voltage and the reflected voltage, and transmit the detected incident voltage and reflected voltage to the controller 1037.
  • the controller 1037 can calculate the impedance matching degree (for example, expressed in SWR) based on the received incident voltage and reflected voltage.
  • the motor 1035 can include a motor driver 1035D and a pivot shaft 1035S.
  • a motor driver 1035D corresponding to the two variable capacitance elements C1 and C2, two pivot shafts 1035S may be provided for rotating the rotatable members of the variable capacitance elements C1 and C2, respectively.
  • the motor driver 1035D can drive the pivot shaft 1035S to rotate correspondingly based on the drive information received from the controller 1037.
  • FIG. 4 schematically illustrates an operational timing diagram in accordance with an embodiment of the present disclosure.
  • the RF source can operate in a pulse-level-level mode and thus have alternating high-level and low-level phases. .
  • the first command CMD1 in the High level phase, may be at a high level, indicating that the motor is rotating to drive the impedance matching network to adjust the impedance, and the second command CMD2 can be low, indicating that the RF source is off the sweep operation.
  • the first command CMD1 in the Low level phase, can be at a low level, indicating that the motor stops rotating, and the motor can remain at the end of the last High level phase, while the second command CMD can be at a high level, indicating the RF source. Turn on the sweep operation. Repeat the above cycle until the RF source stops outputting.
  • the first command CMD1 in the High level phase, may be at a low level, indicating that the motor is not moving, and the second command CMD may be at a high level. Instruct the RF source to turn on the sweep operation.
  • the first command CMD1 In the Low level phase, the first command CMD1 may be at a high level, indicating that the motor is rotating to drive the impedance matching network to adjust the impedance, while the second command CMD2 may be at a low level, indicating that the RF source is off the sweep operation. Repeat the above cycle until the RF source stops outputting.
  • a motor-driven impedance matching network is used for impedance matching in both the High level stage and the Low level stage.
  • the impedances of the High level phase and the Low level phase differ greatly, it is difficult to achieve impedance matching that satisfies the process requirements.
  • the motor response speed can not keep up with the High level and Low level impedance switching speed (PWM modulation frequency)
  • PWM modulation frequency the High level and Low level impedance switching speed
  • a combination of motor drive impedance matching and sweep impedance matching is employed.
  • the automatic matching step or the frequency sweep matching step is selectively performed according to the operating mode of the radio frequency source. Therefore, the unstable and non-repetitive phenomenon caused by the impedance change too fast in the impedance matching process can be effectively avoided, and a large process window and process stability can be realized.
  • the present invention further provides an impedance matching method for matching impedance between a load connected to a radio frequency source and a radio frequency source, and the impedance matching method includes:
  • the motor is instructed to drive a matching impedance network to provide a certain impedance
  • the motor is instructed to stop driving and the RF source is swept.
  • the working mode of the radio frequency source is a pulse level-level mode
  • the pulse level-level mode includes a high level stage and a low level (Low level). stage.
  • the impedance matching method provided by the invention can effectively avoid the unstable and non-repetitive phenomenon caused by the impedance change too fast in the impedance matching process, and can realize a large process window and process stability.
  • the sweep matching step can also be performed in the high level phase; in the low level phase, the automatic matching step is performed.
  • the power output of the RF source in the high level phase is different from the power output in the low level phase.
  • the pulse signal in the High level phase, may have a larger power, such as 1000 W, while in the Low level phase, the pulse signal may have a lower power (not zero), such as 600 W.
  • the present invention also provides a plasma generating apparatus including a radio frequency source, a load connected to the radio frequency source, and an impedance matching device for matching an impedance between the radio frequency source and the load, the impedance
  • the matching device employs the above impedance matching device provided by the present invention.
  • the plasma generating apparatus provided by the present invention can realize a large process window and process stability by using the above-mentioned impedance matching device provided by the present invention, and can be applied to a high-precision plasma etching machine.
  • FIG. 5 schematically illustrates a simplified cross-sectional view of a plasma etch machine in accordance with an embodiment of the present disclosure.
  • the plasma etch machine can include a closed cavity 505.
  • the chamber 505 is evacuated by a vacuum system to maintain a certain degree of vacuum in the chamber 505.
  • a substrate stage 505W is disposed under the cavity 505, and the substrate may be disposed on the substrate stage 505W for etching.
  • the substrate stage 505W can be connected to the RF source (via, for example, the impedance matching device described above provided by the present invention).
  • the coil 505L can be wound.
  • the coil 505L can be coupled to an RF source (which can be separated from the RF source of the substrate stage 505W) via an impedance matching device such as described above to receive RF power.
  • the coil 505L can induce a variable electric field in the cavity 505.
  • the reactive gas introduced through the gas system is excited by a variable electric field to generate ionization and form a plasma, including charged electrons and ions.
  • the reactive group can chemically react with the surface of the material to be etched (e.g., the layer of material formed on the substrate) on the substrate placed on the substrate stage 505W, and form a volatile reaction product.
  • the reaction product can be detached from the surface of the etched material and extracted by the vacuum system.
  • a DC offset can be applied to the substrate stage 505W to accelerate the positively charged reactive gas ions against the surface of the etched material. This ion bombardment can greatly accelerate the chemical reaction of the surface and the desorption of the reaction product, thereby increasing the etching rate.
  • ICP etching machine is described herein, the present disclosure is not limited thereto.
  • the technology of the present disclosure can also be applied to other plasma etching machines such as inductively coupled plasma generating devices, capacitively coupled plasma generating devices, microwave plasma generating devices, or electron cyclotron resonance plasma generating devices, and the like.

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  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
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  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

本发明公开了阻抗匹配方法、阻抗匹配装置及等离子体产生设备。该阻抗匹配方法用于对射频源和射频源连接的负载之间的阻抗进行匹配，包括：根据射频源的工作模式，选择性地进行自动匹配步骤或者扫频匹配步骤；其中，在自动匹配步骤中，指示电机驱动匹配阻抗网络以提供一定的阻抗；在扫频匹配步骤中，指示电机停止驱动以及射频源进行扫频操作。根据本公开的实施例，可以有效避免阻抗匹配过程中由于阻抗变化过快导致的匹配不稳定和不重复的现象，可以实现较大的工艺窗口和工艺稳定性。

Description

阻抗匹配方法、阻抗匹配装置及等离子体产生设备 技术领域
本公开一般地涉及电子电路技术，更具体地，涉及一种阻抗匹配方法、阻抗匹配装置及等离子体产生设备。
背景技术
在传统半导体制造工艺中已经使用各种类型的等离子体设备。现今比较广泛的一种用于等离子体刻蚀设备的激发等离子体方式为电感耦合等离子体(ICP，Inductively Coupled Plasma)，这种方式可以在较低的工作气压下获得高密度的等离子体，而且设备的结构简单，造价低，同时可以独立控制产生等离子体的射频源(决定等离子体密度)和基片台射频源(决定入射到晶片上的粒子能量)。
传统的刻蚀机设备的射频源输出的是正弦连续波。随着集成电路的进一步发展，原有的技术方案已无法满足20nm及以下刻蚀工艺的要求，而脉冲等离子体新技术的应用则实现了微细化工艺上的突破。脉冲等离子体技术用于减小连续波射频能量带来的等离子体诱导损伤(Plasma induced damage，PID)，改善刻蚀工艺中的负载效应(Loading effect)，显著提高刻蚀选择比(Selectivity)，并且增大了工艺调节手段和窗口。
在射频能量传输的过程中，射频源的输出阻抗一般为50欧姆，而反应腔室的输入阻抗一般为一个具有实部阻抗和虚部阻抗的非50欧姆阻抗值。因而，如果直接将能量传输至反应腔室，则由于传输路径的阻抗不匹配，可能发生射频能量的反射，导致反应腔室中无法正常激发等离子体。因此，需要在射频源和反应腔室间接入一个匹配装置，使射频源后端的输入阻抗为50欧姆，便于能量的正常传输。
发明内容
有鉴于此，本公开的目的至少部分地在于提供一种阻抗匹配方法、阻抗匹配装置及等离子体产生设备，以有效实施阻抗匹配。
根据本公开的一个方面，提供了一种阻抗匹配方法，可选的，用于对射频源和所述射频源连接的负载之间的阻抗进行匹配，其特征在于，所述阻抗匹配方法包括：
根据所述射频源的工作模式，选择性地进行自动匹配步骤或者扫频匹配步骤；其中，
在所述自动匹配步骤中，指示电机驱动匹配阻抗网络以提供一定的阻抗；
在所述扫频匹配步骤中，指示电机停止驱动以及所述射频源进行扫频操作。
可选的，所述射频源的工作模式为脉冲双电平模式，所述脉冲双电平模式包括高电平阶段和低电平阶段；
在所述高电平阶段，进行所述自动匹配步骤；
在所述低电平阶段，进行所述扫频匹配步骤；
或者，在所述高电平阶段，进行所述扫频匹配步骤；
在所述低电平阶段，进行所述自动匹配步骤。
可选的，所述射频源在所述高电平阶段输出的功率与在所述低电平阶段输出的功率不同。
根据本公开的另一方面，提供了一种阻抗匹配装置，用于对射频源和所述射频源连接的负载之间的阻抗进行匹配，其特征在于，所述阻抗匹配装置包括：
匹配阻抗网络；
电机，用于驱动所述匹配阻抗网络以提供一定的阻抗；以及
控制器，响应于接收到的射频源的工作模式，选择性地发出第一指令或第二指令，其中，所述第一指令指示所述电机驱动阻抗匹配网络以提供一定的阻抗；所述第二指令指示所述电机停止驱动以及所述射频源进行扫频操作。
可选的，所述射频源的工作模式为脉冲双电平模式，所述脉冲双电平模式包括高电平阶段和低电平阶段；
在所述高电平阶段，所述控制器发出所述第一指令；
在所述低电平阶段，所述控制器发出所述第二指令；
或者，在所述高电平阶段，所述控制器发出所述第二指令；
在所述低电平阶段，所述控制器发出所述第一指令。
可选的，射频源的频率可以为2MHz、13.56MHz、60MHz中至少之一。
可选的射频源可以以10Hz-20kHz的调制频率、10％-90％的占空比被脉冲调制。
作为本公开的另一方面，提供了一种等离子体产生设备，其包括射频源、与所述射频源连接的负载，以及用于对所述射频源和负载之间的阻抗进行匹配的阻抗匹配装置，所述阻抗匹配装置采用本发明提供的上述阻抗匹配装置。
可选的，所述等离子体产生设备包括电感耦合等离子体产生设备、电容耦合等离子体产生设备、微波等离子体产生设备或电子回旋共振等离子体产生设备。
可选的，所述等离子体产生设备可以用于等离子体刻蚀机。
有益效果：
本发明提供的阻抗匹配方法和阻抗匹配装置的技术方案中，采用电机驱动阻抗匹配与扫频阻抗匹配相结合的方式。具体地，根据射频源的工作模式，选择性地进行自动匹配步骤或者扫频匹配步骤。于是，可以有效避免阻抗匹配过程中由于阻抗变化过快导致的匹配不稳定和不重复的现象，可以实现较 大的工艺窗口和工艺稳定性。
本发明提供的等离子体产生设备，其通过采用本发明提供的上述阻抗匹配装置，可以实现较大的工艺窗口和工艺稳定性，从而可以应用于高精度的等离子体刻蚀机中。
附图说明
通过以下参照附图对本公开实施例的描述，本公开的上述以及其他目的、特征和优点将更为清楚，在附图中：
图1示意性示出了根据本公开实施例的等离子体产生设备的简化图；
图2示意性示出了根据本公开实施例的等离子体产生设备的框图；
图3示意性示出了根据本公开实施例的阻抗匹配装置的简化电路图；
图4示意性示出了根据本公开实施例的工作时序图；
图5示意性示出了根据本公开实施例的等离子体刻蚀机的简化截面图。
具体实施方式
以下，将参照附图来描述本公开的实施例。但是应该理解，这些描述只是示例性的，而并非要限制本公开的范围。此外，在以下说明中，省略了对公知结构和技术的描述，以避免不必要地混淆本公开的概念。
在此使用的术语仅仅是为了描述具体实施例，而并非意在限制本公开。这里使用的词语“一”、“一个(种)”和“该”等也应包括“多个”、“多种”的意思，除非上下文另外明确指出。此外，在此使用的术语“包括”、“包含”等表明了所述特征、步骤、操作和/或部件的存在，但是并不排除存在或添加一个或多个其他特征、步骤、操作或部件。
在此使用的所有术语(包括技术和科学术语)具有本领域技术人员通常所理解的含义，除非另外定义。应注意，这里使用的术语应解释为具有与本说明书的上下文相一致的含义，而不应以理想化或过于刻板的方式来解释。
还需要说明的是，实施例中提到的方向用语，例如“上”、“下”、“前”、“后”、“左”、“右”等，仅是参考附图的方向，并非用来限制本公开的范围。贯穿附图，相同的元素由相同或相似的附图标记来表示。并且图中各部件的形状和尺寸不反映真实大小和比例，而仅示意本公开实施例的内容。
除非另外明确指出，否则本说明书及所附权利要求中的数值参数是近似值，能够根据通过本公开的内容所得的所需特性改变。具体而言，所有使用于说明书及权利要求中表示组成的含量、反应条件等等的数字，应理解为在所有情况中是受到「约」的用语所修饰。一般情况下，其表达的含义是指包含特定数量在一些实施例中±10％的变化、在一些实施例中±5％的变化、在一些实施例中±1％的变化、在一些实施例中±0.5％的变化。
说明书与权利要求中所使用的序数例如“第一”、“第二”、“第三”等用词，以修饰相应的元件，其本身并不代表该元件有任何的序数，也不代表某一元件与另一元件的顺序、或是制造方法上的顺序，或是其重要性。序数的使用仅用来使具有某命名的一元件得以和另一具有相同命名的元件能做出清楚区分。
图1示意性示出了根据本公开实施例的等离子体产生设备的简化图。
如图1所示，根据该实施例的等离子体产生设备包括射频(RF)源101和与RF源101连接的负载105。在等离子体产生设备中，负载105可以包括等离子体产生腔。RF源101用以提供一定的RF功率，以便在等离子体产生腔中激发变电场。等离子体产生腔中可以保持一定的真空度，引入其中的反应气体可以在变电场的作用下电离，从而产生等离子体。等离子体产生腔可以基于多种机制进行工作，例如电感耦合等离子体(ICP)、电容耦合等离子体(CCP)、微波等离子体、电子回旋共振(ECR)等离子体等。
如背景技术部分所述，RF源101的输出阻抗一般为50欧姆，而作为其负载的等离子体产生腔的输入阻抗一般为一个具有实部阻抗和虚部阻抗的非 50欧姆阻抗值。为了避免源和负载之间阻抗不匹配导致的问题，在RF源101与作为负载的等离子体产生腔之间耦接有阻抗匹配装置103，用以匹配RF源101与等离子体产生腔的阻抗。将在以下进一步详细描述阻抗匹配装置103的配置。
图2示意性示出了根据本公开实施例的等离子体产生设备的框图。
与以上结合图1描述的等离子体产生设备相似，图2中示出的等离子体产生设备同样包括RF源101、负载(例如，等离子体产生腔)105以及连接在RF源和负载之间的阻抗匹配装置103。
阻抗匹配装置103用于对射频源101和射频源101连接的负载105之间的阻抗进行匹配。该阻抗匹配装置103包括：
匹配阻抗网络1033；
电机1035，用于驱动匹配阻抗网络1033以提供一定的阻抗；以及
控制器，响应于接收到的射频源101的工作模式，选择性地发出第一指令或第二指令，其中，第一指令指示电机1035驱动阻抗匹配网络1033以提供一定的阻抗；第二指令指示电机1035停止驱动以及射频源101进行扫频操作。
RF源101可以工作于脉冲双电平(level-level)模式。例如，RF源101可以产生一定频率(例如，2MHz、13.56MHz或60MHz，优选为13.56MHz)的RF信号。通过脉冲宽度调制(Pulse Width Modulation，PWM)，可以将RF信号调制为在一个周期内具有高电平(High level)和低电平(Low level)的脉冲信号(参见图4中的(a)部分)。这种脉冲信号有助于等离子体起辉。在High level阶段，脉冲信号可以具有较大功率例如1000W，而在Low level阶段，脉冲信号可以具有较小功率(不为零)例如600W。在一个示例中，该调制信号的调制频率可以为约10Hz-20kHz，占空比(例如，High Level阶段在一个周期中的比例)可以为约10％-90％。RF源101可以输出经PWM 调制的RF信号。
在此，可以根据RF源101的工作模式选择性地进行自动匹配步骤或者扫频匹配步骤。例如，当RF源101的工作模式为上述脉冲双电平(level-level)模式时，在High level阶段，进行自动匹配步骤。在Low level阶段，进行扫频匹配步骤。在实际应用中，可以通过输出工作模式信息MODE，来对RF源101的工作模式进行控制，例如指示RF源101进行High level阶段或者Low level阶段。该工作模式信息例如可以由控制对RF信号进行PWM调制的控制单元来输出。
需要说明的是，在实际应用中，还可以在High level阶段，进行扫频匹配步骤。在Low level阶段，进行自动匹配步骤。
如图2所示，阻抗匹配装置103可以包括阻抗匹配度检测器1031、阻抗匹配网络1033、电机1035和控制器1037。
阻抗匹配度检测器1031可以检测RF源101与负载105之间的阻抗匹配度。理论上，当RF源101与负载105之间的阻抗相匹配时，来自RF源101的RF功率将全部传输至负载105，而不存在来自负载105的反射功率。因此，在一个示例中，可以通过检测来自RF源101的入射电压以及来自负载105的反射电压，并对二者进行比较(例如，通过计算驻波比(SWR))来进行阻抗匹配度检测。当然，本公开不限于此，而是可以通过其他各种合适的方式来检测阻抗匹配度。另外，阻抗匹配度检测器1031可以仅检测用于导出阻抗匹配度的相关参数，将这些参数发送至控制器1037以便由控制器1037确定阻抗匹配度，而并不由自身来确定。
阻抗匹配网络1033连接在RF源101与负载105之间，用以提供可变阻抗，并因此匹配RF源101与负载105之间的阻抗。阻抗匹配网络1033可以包括阻抗元件(例如，容性阻抗元件、抗性阻抗元件等)连接而成的网络。这些阻抗元件中的至少一部分可以具有可变阻抗配置，使得阻抗匹配网络 1033整体上可以呈现不同的阻抗值。例如，阻抗匹配网络1033可以包括可变电容元件。可变电容元件可以包括可旋转部件(例如，其极板或者极板之间的电介质层)，通过对该可旋转部件进行旋转，从而改变其电容值。
电机1035可以驱动阻抗匹配网络1033(具体地，其中的可变阻抗元件如可变电容元件)，以提供一定的阻抗值。例如，电机1035可以驱动可变电容元件中的可旋转部件进行旋转，从而改变该可变电容元件的电容值。电机1035例如可以是步进电机。
控制器1037可以控制阻抗匹配装置103的总体操作。根据本公开的实施例，控制器1037可以根据RF源101的工作模式，选择性地发出针对电机1035的第一指令CMD1或者针对RF源101的第二指令CMD2。
其中，第一指令CMD1可以指示电机1035驱动阻抗匹配网络1035以实现一定的阻抗。在该第一指令CMD1中可以包括或者可以在该第一指令CMD1之外另外提供电机1035的驱动信息(例如，转动方向、转动角度等)。例如，控制器1037可以接收由阻抗匹配度检测器1031所检测的阻抗匹配度(例如，以SWR代表)或者根据阻抗匹配度检测器1031所检测到的参数来导出阻抗匹配度，并根据阻抗匹配度，得到电机1035的驱动信息。于是，电机1035可以根据接收到的驱动信息相应地转动(例如，前进或后退)一定的角度，以改变(例如，增大或减小)阻抗匹配网络1033提供的阻抗值。例如，控制器1037可以实施控制，使得SWR向着接近1的方向变化，直至SWR尽可能接近乃至等于1(意味着阻抗完全匹配)。
第二指令CMD2可以指示RF源101进行扫频操作。例如，RF源101中的RF信号发生器可以根据接收到的第二指令CMD2，在一定范围内(例如，从12.88MHz-14.32MHz)改变其所产生的RF信号的频率。由于RF信号的频率发生改变，阻抗匹配网络1033的阻抗也会发生一定的变化(例如，电容和电感的阻抗随信号频率改变)。例如，控制器1037可以实施控制，使 得SWR向着接近1的方向变化，使SWR尽可能接近乃至等于1。
在不同的RF源101的工作模式下，电机驱动阻抗匹配操作与扫频阻抗匹配操作可以择一进行。
根据本公开的实施例，在High level阶段，控制器1037可以发出第一指令CMD1；在Low level阶段，控制器1037可以发出第二指令CMD2。也即，在High level阶段，可以通过电机1035驱动阻抗匹配网络1033来提供阻抗匹配(此时，扫描操作可以停止)，而在Low level阶段，可以通过RF源101的扫频操作来提供阻抗匹配(此时，电机可以停止驱动，例如保留在上一次驱动结束时的位置)。
或者，根据本公开的实施例，在Low level阶段，控制器1037可以发出第一指令CMD1，而在High level阶段，控制器1037可以发出第二指令CMD2。也即，在Low level阶段，可以通过电机1035驱动阻抗匹配网络1033来提供阻抗匹配(此时，扫描操作可以停止)，而在High level阶段，可以通过RF源101的扫频操作来提供阻抗匹配(此时，电机可以停止驱动，例如保留在上一次驱动结束时的位置)。
图3示意性示出了根据本公开实施例的阻抗匹配装置的简化电路图。
在图3的示例中，示出了由电感元件L以及可变电容元件C1和C2组成的阻抗匹配网络1033。可变电容元件C1和C2分别为串接电容和并接电容，以提供不同的阻抗分量。
在图3的示例中，阻抗匹配度检测器1031可以检测入射电压和反射电压，并将检测到的入射电压和反射电压发送至控制器1037。控制器1037可以根据接收到的入射电压和反射电压，来计算阻抗匹配度(例如，以SWR表示)。
电机1035可以包括电机驱动器1035D以及枢转轴1035S。在该示例中，与两个可变电容元件C1和C2相对应，可以设置两个枢转轴1035S，用以分 别转动可变电容元件C1和C2中的可旋转部件。电机驱动器1035D可以根据从控制器1037接收到的驱动信息，驱动枢转轴1035S相应转动。
图4示意性示出了根据本公开实施例的工作时序图。
如图4中的(a)部分所示，RF源可以工作于脉冲双电平(level-level)模式，并因此具有交替的高电平(High level)阶段和低电平(Low level)阶段。
根据一个实施例，如图4中的(b)部分所示，在High level阶段中，第一指令CMD1可以处于高电平，指示电机转动，以驱动阻抗匹配网络来调节阻抗，而第二指令CMD2可以处于低电平，指示RF源关闭扫频操作。在Low level阶段中，第一指令CMD1可以处于低电平，指示电机停止转动，且电机可以保持在上一High level阶段结束时的位置，而第二指令CMD可以处于高电平，指示RF源开启扫频操作。重复上述循环，直至RF源停止输出。
根据另一个实施例，如图4中的(c)部分所示，在High level阶段中，第一指令CMD1可以处于低电平，指示电机不动，而第二指令CMD可以处于高电平，指示RF源开启扫频操作。在Low level阶段中，第一指令CMD1可以处于高电平，指示电机转动，以驱动阻抗匹配网络来调节阻抗，而第二指令CMD2可以处于低电平，指示RF源关闭扫频操作。重复上述循环，直至RF源停止输出。
在常规技术中，在High level阶段和Low level阶段均采用电机驱动阻抗匹配网络进行阻抗匹配。在这种情况下，如果High level阶段和Low level阶段的阻抗相差较大，则难以实现满足工艺需求的阻抗匹配。因为需要不断地在High level阻抗匹配位置与Low level阻抗匹配位置之间切换，由于电机响应速度远远跟不上High level和Low level的阻抗切换速度(PWM的调制频率)，从而无法找到一个平衡阻抗点进行匹配，因此有失配风险，最终表现为振荡或反射过大。
与上述常规技术不同，根据本公开的实施例，采用电机驱动阻抗匹配与扫频阻抗匹配相结合的方式。具体地，根据射频源的工作模式，选择性地进行自动匹配步骤或者扫频匹配步骤。于是，可以有效避免阻抗匹配过程中由于阻抗变化过快导致的匹配不稳定和不重复的现象，可以实现较大的工艺窗口和工艺稳定性。
作为另一个技术方案，本发明还提供一种阻抗匹配方法，用于对射频源和射频源连接的负载之间的阻抗进行匹配，该阻抗匹配方法包括：
根据射频源的工作模式，选择性地进行自动匹配步骤或者扫频匹配步骤；其中，
在自动匹配步骤中，指示电机驱动匹配阻抗网络以提供一定的阻抗；
在扫频匹配步骤中，指示电机停止驱动以及射频源进行扫频操作。
可选的，上述射频源的工作模式为脉冲双电平(level-level)模式，该脉冲双电平(level-level)模式包括高电平(High level)阶段和低电平(Low level)阶段。
在High level阶段，进行上述自动匹配步骤；
在Low level阶段，进行上述扫频匹配步骤。
本发明提供的阻抗匹配方法，其可以有效避免阻抗匹配过程中由于阻抗变化过快导致的匹配不稳定和不重复的现象，可以实现较大的工艺窗口和工艺稳定性。
在实际应用中，还可以在高电平阶段，进行扫频匹配步骤；在低电平阶段，进行自动匹配步骤。
可选的，射频源在高电平阶段输出的功率与在低电平阶段输出的功率不同。进一步的，在High level阶段，脉冲信号可以具有较大功率例如1000W，而在Low level阶段，脉冲信号可以具有较小功率(不为零)例如600W。
作为另一个技术方案，本发明还提供一种等离子体产生设备，其包括射 频源、与射频源连接的负载，以及用于对射频源和负载之间的阻抗进行匹配的阻抗匹配装置，该阻抗匹配装置采用本发明提供的上述阻抗匹配装置。
本发明提供的等离子体产生设备，其通过采用本发明提供的上述阻抗匹配装置，可以实现较大的工艺窗口和工艺稳定性，从而可以应用于高精度的等离子体刻蚀机中。
在本实施例中，上述等离子体产生设备用于等离子体刻蚀机。具体地，图5示意性示出了根据本公开实施例的等离子体刻蚀机的简化截面图。如图5所示，等离子体刻蚀机可以包括密闭腔体505。通过真空系统对腔体505进行抽真空操作，可以在腔体505中保持一定的真空度。在腔体505下方设有基片台505W，基片可以设置于基片台505W上以进行刻蚀。基片台505W可以(经由例如本发明提供的上述阻抗匹配装置)连接至RF源。
绕腔体505的上部，可以缠绕线圈505L。线圈505L可以经由例如上述的阻抗匹配装置而耦接到RF源(可以与基片台505W的RF源相分离)，以便接收RF功率。于是，线圈505L可以在腔体505中感应出变电场。通过气体系统引入的反应气体被变电场激发，产生电离并形成等离子体，包括带电的电子和离子。腔体505中的气体在电子的撞击下，除了转变成离子之外，还能吸收能量，并形成大量的活性基团。活性基团可以与置于基片台505W上的基片上的被刻蚀物质(例如，基片上形成的材料层)表面发生化学反应，并形成挥发性的反应生成物。反应生成物可以脱离被刻蚀物质表面，并被真空系统抽出。另外，可以向基片台505W施加直流偏移，使带正电的反应气体离子加速撞击被刻蚀物质表面。这种离子轰击可以大大加快表面的化学反应及反应生成物的脱附，从而使刻蚀速率增加。
尽管在此描述了ICP刻蚀机，但是本公开不限于此。例如，本公开的技术也可以应用于其他等离子体刻蚀机如电感耦合等离子体产生设备、电容耦合等离子体产生设备、微波等离子体产生设备或者电子回旋共振等离子体产 生设备等等。
以上对本公开的实施例进行了描述。但是，这些实施例仅仅是为了说明的目的，而并非为了限制本公开的范围。尽管在以上分别描述了各实施例，但是这并不意味着各个实施例中的措施不能有利地结合使用。本公开的范围由所附权利要求及其等价物限定。不脱离本公开的范围，本领域技术人员可以做出多种替代和修改，这些替代和修改都应落在本公开的范围之内。

Claims (10)

  1. 一种阻抗匹配方法，用于对射频源和所述射频源连接的负载之间的阻抗进行匹配，其特征在于，所述阻抗匹配方法包括：
    根据所述射频源的工作模式，选择性地进行自动匹配步骤或者扫频匹配步骤；其中，
    在所述自动匹配步骤中，指示电机驱动匹配阻抗网络以提供一定的阻抗；
    在所述扫频匹配步骤中，指示电机停止驱动以及所述射频源进行扫频操作。
  2. 根据权利要求1所述的阻抗匹配方法，其特征在于，所述射频源的工作模式为脉冲双电平模式，所述脉冲双电平模式包括高电平阶段和低电平阶段；
    在所述高电平阶段，进行所述自动匹配步骤；
    在所述低电平阶段，进行所述扫频匹配步骤；
    或者，在所述高电平阶段，进行所述扫频匹配步骤；
    在所述低电平阶段，进行所述自动匹配步骤。
  3. 根据权利要求2所述的阻抗匹配方法，其特征在于，所述射频源在所述高电平阶段输出的功率与在所述低电平阶段输出的功率不同。
  4. 一种阻抗匹配装置，用于对射频源和所述射频源连接的负载之间的阻抗进行匹配，其特征在于，所述阻抗匹配装置包括：
    匹配阻抗网络；
    电机，用于驱动所述匹配阻抗网络以提供一定的阻抗；以及
    控制器，用于根据所述射频源的工作模式，选择性地发出第一指令或第 二指令，其中，所述第一指令指示所述电机驱动阻抗匹配网络以提供一定的阻抗；所述第二指令指示所述电机停止驱动以及所述射频源进行扫频操作。
  5. 根据权利要求4所述的阻抗匹配装置，其特征在于，所述射频源的工作模式为脉冲双电平模式，所述脉冲双电平模式包括高电平阶段和低电平阶段；
    在所述高电平阶段，所述控制器发出所述第一指令；
    在所述低电平阶段，所述控制器发出所述第二指令；
    或者，在所述高电平阶段，所述控制器发出所述第二指令；
    在所述低电平阶段，所述控制器发出所述第一指令。
  6. 根据权利要求4所述的阻抗匹配装置，其特征在于，所述射频源的频率为2MHz、13.56MHz、60MHz中至少之一。
  7. 根据权利要求5所述的阻抗匹配装置，其特征在于，所述射频源以10Hz-20kHz的调制频率、10％-90％的占空比被脉冲调制。
  8. 一种等离子体产生设备，包括射频源、与所述射频源连接的负载，以及用于对所述射频源和负载之间的阻抗进行匹配的阻抗匹配装置，其特征在于，所述阻抗匹配装置采用权利要求4-7任意一项所述的阻抗匹配装置。
  9. 根据权利要求8所述的等离子体产生设备，其特征在于，所述等离子体产生设备包括电感耦合等离子体产生设备、电容耦合等离子体产生设备、微波等离子体产生设备或者电子回旋共振等离子体产生设备。
  10. 根据权利要求8所述的等离子体产生设备，其特征在于，所述等离子体产生设备用于等离子体刻蚀机。
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KR20190126387A (ko) 2019-11-11
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