WO2018228091A1 - 黑矩阵及其制备方法和系统、显示基板和显示装置 - Google Patents

黑矩阵及其制备方法和系统、显示基板和显示装置 Download PDF

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Publication number
WO2018228091A1
WO2018228091A1 PCT/CN2018/086038 CN2018086038W WO2018228091A1 WO 2018228091 A1 WO2018228091 A1 WO 2018228091A1 CN 2018086038 W CN2018086038 W CN 2018086038W WO 2018228091 A1 WO2018228091 A1 WO 2018228091A1
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Prior art keywords
black matrix
substrate
exposure
exposure process
matrix film
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Ceased
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PCT/CN2018/086038
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English (en)
French (fr)
Inventor
牛宗
杨芳
崔士坤
曹振洋
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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Priority to US16/320,782 priority Critical patent/US10908466B2/en
Publication of WO2018228091A1 publication Critical patent/WO2018228091A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs

Definitions

  • the present disclosure relates to a black matrix, a method and system for its preparation, a display substrate, and a display device.
  • Liquid crystal display has become a mainstream product in flat panel display devices due to its small size, low power consumption, and no radiation.
  • high pixel density (Pixels Per Inch, PPI) liquid crystal display devices (such as two-dimensional display devices and VR displays) are increasingly popular, so the display of high pixel density liquid crystal display devices
  • the technology has also been widely studied and applied, and will also become an important development direction of display technology.
  • the preparation process of the liquid crystal display device especially the manufacturing process of the key component black matrix that affects the display effect, Higher requirements were raised.
  • Some embodiments of the present disclosure provide a method of fabricating a black matrix, the method comprising: forming a black matrix film on a substrate; and facing the black matrix film on a side of the black matrix film away from the substrate Performing a first exposure process; performing a second exposure process on the black matrix film on a side of the black matrix film adjacent to the substrate; and performing a process of the first exposure process and the second exposure process
  • the black matrix film is subjected to development processing to form a black matrix.
  • the difference between the upper and lower surface areas of the prepared black matrix is small, the adhesion to the substrate is improved, and the peeling is not easy, so that the black matrix is advantageous for obtaining a display effect with high pixel density value, high fidelity, and richer detail of the picture, and Product yield is further improved.
  • the black matrix film is a negative photoresist.
  • the substrate is supported by an air floating device during the second exposure process.
  • the substrate is supported by the air flotation device without affecting the second exposure process.
  • the first exposure process utilizes a first mask for exposure, the first mask has a first light transmissive pattern; and the second exposure process utilizes a second mask for exposure, The second mask has a second light transmissive pattern; the orthographic projection of the second light transmissive pattern on the substrate when the second exposure process is performed is located when the first exposure process is performed The first light transmissive pattern is within an orthographic projection area on the substrate. Thereby, the requirement for the alignment accuracy of the mask can be reduced.
  • Some embodiments of the present disclosure provide a system for preparing a black matrix, the system comprising: a first exposure device configured to face the black matrix film on the substrate on a side of the black matrix film away from the substrate Performing a first exposure process; the second exposure device is configured to perform a second exposure process on the black matrix film on a side of the black matrix film close to the substrate; and a developing device for performing the The black matrix film of one exposure process and the second exposure process is subjected to development processing to form a black matrix.
  • the second exposure device includes an air flotation device for supporting the substrate in a second exposure process.
  • the first exposure device includes a first mask, the first mask is provided with a first light transmissive pattern; and the second exposure device includes a second mask, the a second light transmission pattern is disposed on the second mask; the orthographic projection of the second light transmission pattern on the substrate when the second exposure processing is performed is located when the first exposure processing is performed The first light transmissive pattern is within an orthographic projection area on the substrate.
  • Some embodiments of the present disclosure propose a black matrix that is prepared using the method of preparing a black matrix as previously described.
  • an area of the black matrix near a side surface of the substrate is not less than 50% of an area of a surface of the black matrix away from the substrate.
  • Some embodiments of the present disclosure propose a display substrate that includes the black matrix described above.
  • Some embodiments of the present disclosure propose a display device comprising: the display substrate described above.
  • FIG. 1 shows a schematic flow chart of a method of preparing a black matrix according to an embodiment of the present disclosure
  • FIG. 2 shows a schematic structural view of a black matrix according to an embodiment of the present disclosure
  • Figure 3 is a schematic view showing the structure of a black matrix prepared by a conventional process
  • Figure 4 shows a scanning electron microscope image of a black matrix prepared by a conventional process
  • FIG. 5 shows a schematic structural view of a system for preparing a black matrix according to an embodiment of the present disclosure
  • Figure 6 shows a schematic flow diagram of a black matrix prepared by a conventional process.
  • the inventors have found that current liquid crystal display devices generally have problems such as low pixel density and low product yield.
  • the inventors have conducted intensive research and a large number of experiments and found that this is mainly due to the fact that the black matrix of the display device is difficult to achieve a narrow line width.
  • the black matrix in the liquid crystal display device is a key component that affects the display effect of the display device, and the preparation process directly affects the display effect of the liquid crystal display device.
  • the display device is provided with a black matrix (BM) for preventing light leakage from occurring so as to block the liquid crystal molecules from the area where the array substrate is controlled.
  • BM black matrix
  • the black matrix cannot be used for display, when a black matrix is prepared, a finer line width is required in order to obtain a higher pixel density, but a finer line width tends to cause the black matrix to peel off in a subsequent preparation process, resulting in a good product.
  • the rate is low, thereby greatly limiting the preparation of a liquid crystal display device of high pixel density. Therefore, while increasing the pixel density, it is ensured that the prepared black matrix is not easily peeled off, the display effect of the liquid crystal display device is greatly improved, and the fidelity of the display device and the richness of the detail of the screen are improved.
  • Some embodiments of the present disclosure provide a method of preparing a black matrix. According to an embodiment of the present disclosure, referring to FIG. 1, the method includes the following steps S100-S400.
  • a black matrix film is formed on the substrate.
  • the specific material of the substrate is not particularly limited, and only needs to satisfy the support of the black matrix film, and in the subsequent step, when the second exposure process is performed on the side of the black matrix film close to the substrate, Light can be exposed through the substrate to the bottom of the black matrix film (the side of the black matrix film close to the substrate).
  • the black matrix film may be formed by coating a photoresist on a substrate.
  • the specific type of the photoresist is not particularly limited as long as the performance of the black matrix film is satisfied.
  • the black matrix film is subjected to a first exposure process on the side of the black matrix film away from the substrate. That is, the light for exposure is incident on the black matrix film from the side of the black matrix film away from the substrate.
  • the first exposure process is performed using the first mask plate, and the first mask plate has a first light transmission pattern.
  • the black matrix film is subjected to a second exposure process on the side of the black matrix film close to the substrate.
  • the second exposure process is performed using the second mask, and the second mask has the second light transmission pattern.
  • light for exposure is incident from the side of the substrate that faces away from the black matrix film and reaches the black matrix film after passing through the substrate.
  • the exposure amount of the side of the black matrix film close to the substrate can be increased, and the degree of polymerization of the side of the black matrix film close to the substrate can be increased, so that the black matrix can be made when the line width of the black matrix is reduced.
  • the substrate is supported by the air floating device during the second exposure process. Thereby, the substrate can be supported by the air floating device without affecting the second exposure process.
  • the order of the first exposure processing and the second exposure processing is not particularly limited as long as the side of the black matrix film away from the substrate and the side close to the substrate can be exposed. Just handle it. That is to say, according to an embodiment of the present disclosure, the first exposure processing may be performed first, and then the second exposure processing may be performed; or, the second exposure processing may be performed first, and then the first exposure processing may be performed.
  • the first exposure process may be performed on the side of the black matrix film away from the substrate, and then the substrate is supported by the air floating device, and the second exposure process is performed on the side of the black matrix film close to the substrate;
  • the floating device supports the substrate, performs a second exposure process on a side of the black matrix film close to the substrate, and performs a first exposure process on a side of the black matrix film away from the substrate.
  • the first exposure processing step described above exposure is performed using a first mask having a first light-transmitting pattern
  • the second exposure processing described above The second mask of the second light transmissive pattern is exposed, and the orthographic projection of the second light transmissive pattern on the substrate is located in the orthographic projection area of the first light transmissive pattern on the substrate, that is, the second light transmissive pattern is
  • the edge of the orthographic projection on the substrate has a distance of 1-2 microns from the orthographic projection edge of the first light transmissive pattern on the substrate, whereby the requirement for alignment accuracy of the mask can be reduced.
  • an orthographic projection of the second light transmissive pattern on the substrate when the second exposure process is performed is located on the substrate when the first exposure process is performed.
  • the orthographic projection portion of the second light transmissive pattern on the substrate is located outside the orthographic projection area of the first light transmissive pattern on the substrate, the degree of polymerization of the bottom photoresist is increased, so that the lower surface area of the black matrix is larger than the upper surface.
  • the area, which increases the linewidth of the black matrix does not meet the requirements of high pixel density products. That is to say, the light transmissive area of the second light transmissive pattern may be smaller than the light transmissive area of the first light transmissive pattern.
  • the orthographic projection of the second light transmissive pattern on the substrate completely coincides with the orthographic projection area of the first light transmissive pattern on the substrate, that is, the edge of the orthographic projection of the second light transmissive pattern on the substrate and the first light transmissive
  • the positive projection edges of the pattern on the substrate completely coincide, which will require higher alignment accuracy, that is, the second light transmission pattern in the second mask and the first light transmission pattern in the first mask need to be accurately aligned. If a registration error is generated, so that the line width of the black matrix is increased, the requirements of a high pixel density product cannot be satisfied.
  • the orthographic projection of the second light transmissive pattern on the substrate is located in the orthographic projection area of the first light transmissive pattern on the substrate, that is, the edge of the orthographic projection of the second light transmissive pattern on the substrate and the first translucent pattern
  • the light pattern has a distance of 1-2 micrometers on the orthographic projection edge on the substrate, which can meet the requirement of thinner line width and reduce the alignment precision of the second mask. Thereby, the exposure effect can be further improved and the product yield can be improved.
  • the black matrix and the substrate obtained by exposing the side of the black matrix film away from the substrate and the side of the black matrix film close to the substrate can be easily obtained by the first exposure process and the second exposure process.
  • the adhesion is improved, it is not easy to peel off, and the product yield is high.
  • the black matrix film subjected to the first exposure processing and the second exposure processing is subjected to development processing to form a black matrix.
  • the black matrix prepared by this method has a surface area close to one side of the substrate not less than 50% of the surface area of the black matrix away from the substrate side. Therefore, the prepared black matrix has a small difference in upper and lower surface areas and is not easily peeled off, so that the black matrix is advantageous in obtaining a display effect with high pixel density value, high fidelity, and richer detail of the picture, and the product yield is further improved.
  • the second exposure processing step can be added on the basis of the first exposure processing (single-sided exposure) in the conventional black matrix preparation process, thereby realizing the sides of the black matrix film (the black matrix film is away from the substrate).
  • a black matrix is prepared by performing exposure processing on one side and the side of the black matrix film close to the substrate. That is to say, the black matrix can be formed by double exposure of the photoresist.
  • a photoresist is coated on the substrate to form a black matrix film, and then one side of the black matrix film away from the substrate (for example, the top of the photoresist) is subjected to single-sided exposure, after the step, before the developing step Then, the second exposure process is performed on the side of the black matrix film close to the substrate (for example, the bottom of the photoresist), that is, double-sided exposure, and the exposure process on the bottom of the black matrix film further improves the polymerization of the bottom photoresist.
  • Double-sided exposure can further increase the degree of polymerization of the bottom photoresist. Therefore, even when the bottom area is small, the adhesion between the black matrix and the substrate is improved, and peeling can be further prevented.
  • the black matrix 30 is prepared by the method of preparing the black matrix 30 described above.
  • the black matrix 30 has all of the features and advantages of the black matrix 30 prepared using the foregoing description.
  • the black matrix 30 is disposed on the substrate 10, wherein an area of the surface of the black matrix 30 near the substrate 10 is not lower than a surface of the black matrix 30 away from the substrate 10 side. 50% of the area.
  • the difference in the upper and lower surface areas of the black matrix 30 is small, and the black matrix 30 on the side in contact with the substrate 10 is not easily peeled off, so that the black matrix 30 is advantageous in obtaining high pixel density values, high fidelity, and richer details of the screen.
  • the display effect, and the product yield is further improved.
  • the conventional black matrix 30 preparation process first, a photoresist is coated on the substrate 10 to form a black matrix film 20, and then exposure, development, and the like are performed.
  • the applied photoresist since only the first exposure process (single-sided exposure) is performed on the top of the black matrix film 20, the applied photoresist has a light-shielding effect, so the exposure amount gradually increases from the surface to the bottom of the photoresist.
  • the degree of polymerization is also lowered, so that the degree of development of the bottom of the finally formed black matrix 30 is larger than that of the top.
  • the black matrix film 20 is developed to form the black matrix 30, resulting in a lower surface area C of the black matrix 30 being much smaller than the upper surface area A of the black matrix 30.
  • the line width of the black matrix 30 i.e., the cross-sectional width of the black matrix 30
  • the lower surface has a sufficient area to be in contact with the substrate 10.
  • the line width is required to be small, so that the area of the lower surface is significantly lower than the area of the upper surface under the preparation process conditions, thereby causing the bottom of the black matrix 30 and the substrate 10 to be Low adhesion, easy peeling, and reduced product yield. Therefore, according to the conventional method, if the product yield is to be ensured, a finer line width cannot be obtained, so that the requirements of a high pixel density product cannot be satisfied. Referring to FIG.
  • the difference in upper and lower surface areas of the black matrix 30 is small, which is advantageous for improving the degree of bonding of the black matrix 30 to the substrate 10, thereby preventing peeling of the black matrix 30 and improving product yield.
  • the area of the surface of the black matrix 30 near the side of the substrate 10 is not less than 50% of the surface area of the black matrix 30 away from the side of the substrate 10, wherein the black matrix 30 is away from the substrate.
  • the cross section of the black matrix 30 is not significantly reduced in the direction perpendicular to the substrate 10, and the adhesion between the black matrix 30 and the substrate 10 is improved, so that it is not easily peeled off, and a finer line width can be obtained, thereby satisfying High pixel density product requirements.
  • the system includes a first exposure device 100, a second exposure device 200, and a developing device 300.
  • the first exposure device 100 is configured to perform a first exposure process on the black matrix film 20 on the substrate 10 on the side of the black matrix film 20 away from the substrate 10.
  • the first exposure device 100 further includes a first mask 110.
  • the second exposure device 200 is configured to perform a second exposure process on the black matrix film 20 on the side of the black matrix film 20 close to the substrate 10.
  • the second exposure device 200 further includes an air floating device 210 and a second mask 220.
  • the developing device 300 is configured to perform development processing on the black matrix film 20 subjected to the first exposure process and the second exposure process to form the black matrix 30. Therefore, the black matrix 30 can be easily obtained by using the system, and the obtained black matrix 30 has a small difference in upper and lower surface areas, and the black matrix 30 has strong adhesion to the substrate 10, and is not easily peeled off, so that the black matrix 30 is advantageous for obtaining pixel density values. High, high fidelity, richer details of the screen, and improved product yield.
  • the order in which the first exposure device 100 and the second exposure device 200 perform exposure processing is not particularly limited as long as the black matrix film 20 can be completed by the first exposure device 100 and the second exposure device 200.
  • Exposure processing may be performed on both the substrate 10 side and the side away from the substrate 10. That is to say, the black matrix film 20 may be exposed to the side of the substrate 10 by the first exposure device 100, and the black matrix film 20 may be exposed to the side of the substrate 10 by the second exposure device 200. Alternatively, the black matrix film 20 may be exposed to the side of the substrate 10 by the second exposure device 200, and the black matrix film 20 may be exposed to the side of the substrate 10 by the first exposure device 100. That is to say, the system may first perform exposure processing on the side of the black matrix film 20 away from the substrate 10, or may first perform exposure processing on the side of the black matrix film 20 close to the substrate 10.
  • the air floating device 210 is configured to support the substrate 10 when the second exposure device 200 performs a second exposure process on the side of the black matrix film 20 close to the substrate 10. Thereby, when the black matrix film 20 is subjected to exposure processing on the side close to the substrate 10, the substrate 10 can be supported without affecting the second exposure process.
  • the first exposure device 100 may be first used to perform a first exposure process on the black matrix film 20 on the side of the black matrix film 20 away from the substrate 10, and then, using the air float device.
  • the substrate 10 is supported by 210, and the matrix film 20 is subjected to a second exposure process by the second exposure device 200 on the side of the black matrix film 20 close to the substrate 10.
  • the air floating device 210 may illuminate the black matrix film 20 from the side of the substrate 10 away from the black matrix film 20 without blocking the light source of the second exposure process.
  • the order of the first exposure processing and the second exposure processing is not particularly limited, that is, the side of the black matrix film 20 away from the substrate 10 and the side of the black matrix film 20 close to the substrate 10 Exposure processing (double-sided exposure) is performed separately.
  • the orthographic projection of the second light transmissive pattern (such as E shown in FIG. 5) on the substrate 10 is located in the first light transmissive pattern (D as shown in FIG. 5) on the substrate 10.
  • the edge of the orthographic projection of the second light transmissive pattern on the substrate 10 has a distance of 1-2 micrometers from the orthographic projection edge of the first light transmissive pattern on the substrate 10, thereby
  • the orthographic projection of the second light transmissive pattern on the substrate 10 is located within the orthographic projection area of the first light transmissive pattern on the substrate 10, reducing the need for alignment accuracy of the mask.
  • the second exposure device 200 is for increasing the amount of backside exposure of the substrate 10 to be exposed in order to increase the contact area of the finally formed black matrix 30 with the substrate 10, and to increase the black matrix 30. Adhesion to the substrate 10. Therefore, the orthographic projection of the second light transmissive pattern on the substrate 10 is located in the orthographic projection area of the first light transmissive pattern on the substrate 10, and the alignment accuracy of the second mask 220 can be reduced. If the orthographic projection portion of the second light transmissive pattern on the substrate 10 is located outside the orthographic projection area of the first light transmissive pattern on the substrate 10, the degree of polymerization of the bottom photoresist will be increased to cause the lower surface area of the black matrix 30.
  • the line width of the black matrix 30 is increased, which cannot meet the requirements of a high pixel density product. If the orthographic projection of the second light transmissive pattern on the substrate 10 coincides with the orthographic projection area of the first light transmissive pattern on the substrate 10, ie, the edge of the orthographic projection of the second light transmissive pattern on the substrate 10 and the first The positive projection edges of the light transmissive pattern on the substrate 10 are completely coincident, and a higher alignment accuracy is required, that is, the second light transmission pattern in the second mask 220 and the first light transmission pattern in the first mask 110. Accurate alignment is required.
  • the orthographic projection of the second light transmissive pattern on the substrate 10 is such that the first light transmissive pattern is within the orthographic projection area of the first light transmissive pattern on the substrate 10, i.e., the orthographic projection edge of the second light transmissive pattern on the substrate 10 and
  • the first light transmissive pattern has a distance of 1-2 micrometers on the orthographic projection edge on the substrate 10, which can meet the requirement of thinner line width and reduce the alignment accuracy of the second mask 220.
  • the specific type of exposure performed by the first exposure device 100 and the second exposure device 200 according to the embodiment of the present disclosure is not particularly limited, and only needs to satisfy the preparation requirements of the black matrix 30, and may be, for example, ultraviolet exposure.
  • a black matrix film 20 is first formed on the substrate 10. Then, using the first mask 110, the black matrix film 20 is exposed to the side of the black matrix film 20 away from the substrate 10, that is, the top of the black matrix film 20 is subjected to single-sided exposure. Finally, the black matrix film 20 subjected to single-sided exposure is subjected to development processing to form a black matrix 30.
  • the bottom of the single-face exposed black matrix 30 has a small adhesion to the substrate 10, is easily peeled off, and the product yield is lowered, and a finer line width cannot be obtained, so that the requirements of a high pixel density product cannot be satisfied.
  • the system for fabricating the black matrix 30 first forms a black matrix film 20 on the substrate 10. Then, using the first mask 110, the black matrix film 20 is subjected to a first exposure process on the side of the black matrix film 20 away from the substrate 10, that is, the first exposure process is performed on the top of the black matrix film 20 (single-sided exposure) ). Next, the substrate 10 is supported by the air floating device 210, and the black matrix film 20 is subjected to a second exposure process. The second exposure process is performed by using the second mask 220 on the side of the black matrix film 20 close to the substrate 10.
  • the black matrix film 20 is subjected to a second exposure process of performing a second exposure process (back exposure) on the bottom of the black matrix film 20. Finally, the black matrix film 20 subjected to the first exposure process and the second exposure process is subjected to development processing by the developing device 300 to form a black matrix 30. Thereby, the black matrix film 20 can be easily subjected to double-sided exposure, and the adhesion between the black matrix 30 and the substrate 10 can be increased, and the degree of development can be weakened, thereby obtaining a finer line width and ensuring a high pixel density.
  • Some embodiments of the present disclosure propose a display substrate that includes a black matrix.
  • the black matrix is prepared using the method described above. Therefore, the display substrate has all the features and advantages of the black matrix described above, and details are not described herein again.
  • Some embodiments of the present disclosure propose a display device that includes a black matrix.
  • the display device includes the display substrate described above.
  • the black matrix is prepared using the method described above.
  • the display device has all of the features and advantages of the black matrix described above, and will not be described again.

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Abstract

一种黑矩阵及其制备方法和系统、显示基板和显示装置。制备黑矩阵的方法包括：(S100)在衬底(10)上形成黑矩阵薄膜；(S200)在所述黑矩阵薄膜远离所述衬底(10)的一侧，对所述黑矩阵薄膜进行第一曝光处理；(S300)在所述黑矩阵薄膜靠近所述衬底(10)的一侧，对所述黑矩阵薄膜进行第二曝光处理；(S400)对经过所述第一曝光处理和所述第二曝光处理的所述黑矩阵薄膜进行显影处理，形成黑矩阵(30)。由此，制备的黑矩阵上下表面积差别小，与衬底的附着力提高，不易剥离，从而该黑矩阵有利于得到像素密度值高、拟真度高、画面的细节更丰富的显示效果，并且产品良率进一步提高。

Description

黑矩阵及其制备方法和系统、显示基板和显示装置
本申请要求于2017年6月12日递交的中国专利申请第201710439960.1号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本公开涉及黑矩阵及其制备方法和系统、显示基板和显示装置。
背景技术
液晶显示装置(Liquid Crystal Display，LCD)因其体积小、功耗低、无辐射等特点已成为目前平板显示装置中的主流产品。随着显示行业的不断发展，高像素密度(Pixels Per Inch，PPI)的液晶显示装置(如二维显示装置以及VR显示)越来越受到人们的欢迎，因此，高像素密度液晶显示装置的显示技术也随之得到了广泛的研究和应用，同时也将成为显示技术的重要发展方向。为了适应高像素密度液晶显示装置的显示需求，提高液晶显示装置的拟真度与画面的细节丰富度，人们对液晶显示装置的制备工艺，特别是影响显示效果的关键组件黑矩阵的制备工艺，提出了更高的要求。
发明内容
本公开的一些实施例提出了一种制备黑矩阵的方法，该方法包括：在衬底上形成黑矩阵薄膜；在所述黑矩阵薄膜远离所述衬底的一侧，对所述黑矩阵薄膜进行第一曝光处理；在所述黑矩阵薄膜靠近所述衬底的一侧，对所述黑矩阵薄膜进行第二曝光处理；对经过所述第一曝光处理和所述第二曝光处理的所述黑矩阵薄膜进行显影处理，形成黑矩阵。由此，制备的黑矩阵上下表面积差别小，与衬底的附着力提高，不易剥离，从而该黑矩阵有利于得到像素密度值高、拟真度高、画面的细节更丰富的显示效果，并且产品良率进一步提高。
在一些示例中，所述黑矩阵薄膜为负性光刻胶。
在一些示例中，在所述第二曝光处理过程中，采用气浮式装置支撑所述衬底。利用气浮装置支撑衬底，不影响第二曝光处理。
在一些示例中，所述第一曝光处理利用第一掩膜板进行曝光，所述第一掩膜板上具有第一透光图案；所述第二曝光处理利用第二掩膜板进行曝光，所述第二掩膜板上具有第二透光图案；在进行所述第二曝光处理时所述第二透光图案在所述衬底上的正投影位于在进行所述第一曝光处理时所述第一透光图案在所述衬底上的正投影区域内。由此，可以降低对于掩膜板对位精度的要求。
本公开的一些实施例提出了一种制备黑矩阵的系统，该系统包括：第一曝光装置，被配置为在黑矩阵薄膜远离衬底的一侧对所述衬底上的所述黑矩阵薄膜进行第一曝光处理；第二曝光装置，被配置为在所述黑矩阵薄膜靠近所述衬底的一侧对所述黑矩阵薄膜进行第二曝光处理；显影装置，用于对经过所述第一曝光处理和第二曝光处理的所述黑矩阵薄膜进行显影处理，形成黑矩阵。
在一些示例中，所述第二曝光装置包括气浮装置，用于在第二曝光处理中支撑所述衬底。
在一些示例中，所述第一曝光装置包括第一掩膜板，所述第一掩膜板上设置有第一透光图案；所述第二曝光装置包括第二掩膜板，所述第二掩膜板上设置有第二透光图案；在进行所述第二曝光处理时所述第二透光图案在所述衬底上的正投影位于在进行所述第一曝光处理时所述第一透光图案在所述衬底上的正投影区域内。
本公开的一些实施例提出了一种黑矩阵，所述黑矩阵是利用前面描述的制备黑矩阵的方法制备的。
在一些示例中，所述黑矩阵靠近所述衬底一侧表面的面积，不低于所述黑矩阵远离所述衬底一侧表面面积的50％。
本公开的一些实施例提出了一种显示基板，该显示基板包括前面描述的黑矩阵。
本公开的一些实施例提出了一种显示装置，该显示装置包括：前面描述的显示基板。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1显示了根据本公开一个实施例的制备黑矩阵的方法的流程示意图；
图2显示了根据本公开一个实施例的黑矩阵的结构示意图；
图3显示了利用传统工艺制备的黑矩阵的结构示意图；
图4显示了利用传统工艺制备的黑矩阵的扫描电子显微镜图；
图5显示了根据本公开一个实施例的制备黑矩阵的系统的结构示意图；以及
图6显示了传统工艺制备的黑矩阵的流程示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
发明人发现，目前的液晶显示装置普遍存在着像素密度低、产品良率低等问题。发明人经过深入研究以及大量实验发现，这主要是由于，显示装置的黑矩阵难以真正实现窄线宽化而导致的。液晶显示装置中的黑矩阵是影响显示装置显示效果的关键组件，其制备工艺直接影响到液晶显示装置的显示效果。具体地，显示装置上设置有用于防止发生漏光的黑矩阵(BM)，以便对液晶分子不受阵列基板控制处的区域进行遮挡。而由于黑矩阵不能用于显示，因此制备黑矩阵时，为了得到更高的像素密度，需要更细的线宽，但是更细的线宽容易使黑矩阵在后续制备工艺中剥落，造成产品良率低，从而极大限制了高像素密度的液晶显示装置的制备。因此，在提高像素密度的同时，保证制备得到的黑矩阵不易脱落，将大幅提高该液晶显示装置的显示效果，提高显示装置的拟真度以及画面细节的丰富度。
本公开提出了的一些实施例一种制备黑矩阵的方法。根据本公开的实施 例，参考图1，该方法包括以下步骤S100-S400。
S100：形成黑矩阵薄膜。
在该步骤中，在衬底上形成黑矩阵薄膜。根据本公开的实施例，衬底的具体材料不受特别限制，只需满足对黑矩阵薄膜的支撑，并且满足后续步骤中，对黑矩阵薄膜靠近衬底的一侧进行第二曝光处理时，光能够通过衬底对黑矩阵薄膜底部(黑矩阵薄膜靠近衬底的一侧)进行曝光即可。根据本公开的实施例，黑矩阵薄膜可以是在衬底上涂布光刻胶形成的。根据本公开的实施例，光刻胶的具体类型不受特别限制，只需满足黑矩阵薄膜的性能即可。
S200：第一曝光处理。
在该步骤中，在黑矩阵薄膜远离衬底的一侧，对黑矩阵薄膜进行第一曝光处理。也就是说，用于曝光的光线从黑矩阵薄膜远离衬底的一侧入射到黑矩阵薄膜上。根据本公开的实施例，第一曝光处理利用第一掩膜板进行曝光，第一掩膜板上具有第一透光图案。
S300：第二曝光处理。
在该步骤中，在黑矩阵薄膜靠近衬底的一侧，对黑矩阵薄膜进行第二曝光处理。根据本公开的实施例，第二曝光处理利用第二掩膜板进行曝光，第二掩膜板上具有第二透光图案。例如，用于曝光的光线从衬底的背离黑矩阵薄膜的一侧入射，并在通过衬底后到达黑矩阵薄膜。由此，可以提高黑矩阵薄膜靠近衬底的一侧曝光的曝光量，增加黑矩阵薄膜的靠近衬底的一侧的聚合程度，从而可以在减小黑矩阵的线宽时，使黑矩阵与衬底的附着力提高，不易剥落，产品良率提高，从而满足了高像素密度产品的要求。根据本公开的实施例，在第二曝光处理过程中，采用气浮装置支撑衬底。由此，可以利用气浮装置支撑衬底，不影响第二曝光处理。
需要说的是，在本公开中，第一曝光处理以及第二曝光处理的先后顺序不受特别限制，只要能够对黑矩阵薄膜远离衬底的一侧，以及靠近衬底的一侧均进行曝光处理即可。也即是说，根据本公开的实施例，可以先进行第一曝光处理，再进行第二曝光处理；或者，先进行第二曝光处理，再进行第一曝光处理。例如，可以先对黑矩阵薄膜远离衬底的一侧进行第一曝光处理，再采用气浮装置支撑衬底，对黑矩阵薄膜靠近衬底的一侧进行第二曝光处理；或者，先采用气浮装置支撑衬底，对黑矩阵薄膜靠近衬底的一侧进行第二曝 光处理，再对黑矩阵薄膜远离衬底的一侧进行第一曝光处理。
根据本公开的具体实施例，在前面描述的第一曝光处理步骤中，是利用具有第一透光图案的第一掩膜板进行曝光的，在前面描述的第二曝光处理中，是利用具有第二透光图案的第二掩膜板进行曝光的，第二透光图案在衬底上的正投影位于第一透光图案在衬底上的正投影区域内，即第二透光图案在衬底上的正投影的边缘，与第一透光图案在衬底上的正投影边缘有1-2微米的距离，由此，可以降低对于掩膜板对位精度的要求。例如，在进行所述第二曝光处理时所述第二透光图案在所述衬底上的正投影位于在进行所述第一曝光处理时所述第一透光图案在所述衬底上的正投影区域内。如果第二透光图案在衬底上的正投影部分位于第一透光图案在衬底上的正投影区域外，将增大底部光刻胶的聚合程度，使黑矩阵下表面面积大于上表面面积，从而使黑矩阵的线宽增大，无法满足高像素密度产品的要求。也即是说，第二透光图案的透光面积，可以小于第一透光图案的透光面积。如果第二透光图案在衬底上的正投影与第一透光图案在衬底上的正投影区域完全重合，即第二透光图案在衬底上的正投影的边缘与第一透光图案在衬底上的正投影边缘完全重合，将需要更高的对位精度，即第二掩膜板中第二透光图案与第一掩膜板中第一透光图案需要精准对位，如果产生对位误差，从而使黑矩阵的线宽增大，同样无法满足高像素密度产品的要求。因此，使得第二透光图案在衬底上的正投影位于第一透光图案在衬底上的正投影区域内，即第二透光图案在衬底上的正投影的边缘与第一透光图案在衬底上的正投影边缘有1-2微米的距离，可以满足更细线宽的要求的同时，降低第二掩膜板的对位精度。由此，可以进一步提高曝光效果，提高产品良率。
总之，利用第一曝光处理与第二曝光处理可以简便的得到对黑矩阵薄膜远离衬底的一侧和黑矩阵薄膜靠近衬底的一侧均曝光的黑矩阵，所得到的黑矩阵与衬底附着力提高，不易剥离，产品良率高。
S400：显影处理形成黑矩阵。
在该步骤中，对经过第一曝光处理和第二曝光处理的黑矩阵薄膜进行显影处理，形成黑矩阵。根据本公开的实施例，利用此方法制备的黑矩阵，靠近衬底一侧的表面积，不低于黑矩阵远离衬底一侧的表面面积的50％。由此，制备的黑矩阵上下表面积差别小，不易剥离，从而该黑矩阵有利于得到像素 密度值高、拟真度高、画面的细节更丰富的显示效果，并且产品良率进一步提高。
综上所述，为了在提高像素密度的同时，保证制备得到的黑矩阵不易脱落，大幅提高该黑矩阵用于液晶显示装置的显示效果，发明人经过深入研究以及大量实验发现，在该黑矩阵的制备过程中，可以在传统黑矩阵制备工艺中采用第一曝光处理(单面曝光)的基础上，增加第二曝光处理步骤，从而实现对黑矩阵薄膜两侧(黑矩阵薄膜远离衬底的一侧以及黑矩阵薄膜靠近衬底的一侧)都进行曝光处理制备得到黑矩阵。也即是说，黑矩阵可以是由光刻胶经过双面曝光而形成的。具体的，首先在衬底上涂布光刻胶形成黑矩阵薄膜，然后对黑矩阵薄膜远离衬底的一侧(例如，光刻胶顶部)进行单面曝光，在该步骤后，显影步骤之前，再对黑矩阵薄膜的靠近衬底的一侧(例如，光刻胶底部)进行第二曝光处理，即进行双面曝光，对黑矩阵薄膜底部的曝光工艺将进一步提高底部光刻胶的聚合程度，显影程度减弱，显影后形成黑矩阵的底部与衬底的附着力增强，且不易剥离，可以做到更细的线宽，满足高像素密度产品的要求。进行双面曝光，可以进一步提高底部光刻胶的聚合程度，因此，即便是底部面积较小的情况下，黑矩阵与衬底的附着力也会提高，从而可以进一步防止剥离。
本公开的一些实施例提出了一种黑矩阵30。根据本公开的实施例，该黑矩阵30是利用前面描述的制备黑矩阵30的方法制备的。由此，该黑矩阵30具有利用前面描述制备的黑矩阵30所有的特征以及优点。根据本公开的实施例，参考图2，该黑矩阵30设置在衬底10上，其中，黑矩阵30靠近衬底10一侧表面的面积不低于黑矩阵30远离衬底10一侧的表面面积的50％。由此，黑矩阵30的上下表面积差别小，且与衬底10接触一侧的黑矩阵30不易剥离，从而该黑矩阵30有利于得到像素密度值高、拟真度高、画面的细节更丰富的显示效果，并且产品良率进一步提高。
在传统的黑矩阵30制备工艺过程中，首先是在衬底10上涂布光刻胶形成黑矩阵薄膜20，然后进行曝光、显影等工序。但是在曝光过程时，由于只对黑矩阵薄膜20顶部进行第一曝光处理(单面曝光)，涂布的光刻胶具有遮光的作用，因此从光刻胶的表面到底部，曝光量会逐渐减少，聚合度也会随之降低，因此造成最终形成的黑矩阵30底部的显影程度比顶部大。参考图3， 黑矩阵薄膜20显影形成黑矩阵30，造成黑矩阵30下表面面积C远小于黑矩阵30的上表面面积A。当黑矩阵30的线宽(即黑矩阵30的横截面宽度)较大时，即便黑矩阵30的上、下表面积差距较大，仍能够保证下表面具有足够的面积与衬底10接触。而在基于窄线宽化的黑矩阵30，要求线宽较小，因此该制备工艺条件下，下表面的面积又显著低于上表面的面积，进而造成黑矩阵30的底部与衬底10的附着力小，容易剥离，产品良率降低。因此，按照传统方法，如要保证产品良率，则无法得到更细的线宽，从而无法满足高像素密度产品的要求。参考图4，为传统工艺制备的黑矩阵30的扫描电子显微镜形貌图(SEM图)，如图所示，单面曝光条件下，黑矩阵30下表面面积远小于黑矩阵30的上表面面积，从而会造成黑矩阵30的底部与衬底10的附着力小，容易剥离，产品良率降低。
根据本公开的实施例，黑矩阵30的上下表面积差别小，有利于提高黑矩阵30与衬底10接触的结合程度，从而可以防止黑矩阵30发生剥离，提高产品良率。根据本公开的实施例，参考图2，黑矩阵30靠近衬底10一侧表面的面积，不低于黑矩阵30远离衬底10一侧表面面积的50％，其中，黑矩阵30远离衬底10一侧表面的面积，如图2中所示的A；黑矩阵30靠近衬底10一侧表面的面积，如图2中所示的B。由此，黑矩阵30的横截面沿着垂直于衬底10的方向上无明显降低，黑矩阵30与衬底10的附着力提高，因此不易剥离，进而可以得到更细的线宽，从而满足高像素密度产品的要求。
本公开的一些实施例提出了一种制备黑矩阵30的系统。根据本公开的实施例，参考图5，该系统包括：第一曝光装置100、第二曝光装置200以及显影装置300。根据本公开的实施例，第一曝光装置100用于在黑矩阵薄膜20远离衬底10的一侧，对衬底10上的黑矩阵薄膜20进行第一曝光处理。根据本公开的实施例，第一曝光装置100进一步包括第一掩膜板110。根据本公开的实施例，第二曝光装置200用于在黑矩阵薄膜20靠近衬底10的一侧，对黑矩阵薄膜20进行第二曝光处理。根据本公开的实施例，第二曝光装置200进一步包括气浮装置210以及第二掩膜板220。根据本公开的实施例，显影装置300用于对经过第一曝光处理和第二曝光处理的黑矩阵薄膜20进行显影处理，形成黑矩阵30。由此，可以利用该系统简便的得到黑矩阵30，得到的黑矩阵30上下表面积差别小，黑矩阵30与衬底10的附着力强，不易剥离， 从而该黑矩阵30有利于得到像素密度值高、拟真度高、画面的细节更丰富的显示效果，并且产品良率进一步提高。
根据本公开的实施例，第一曝光装置100以及第二曝光装置200进行曝光处理的先后顺序不受特别限制，只要能够利用第一曝光装置100以及第二曝光装置200完成对黑矩阵薄膜20靠近衬底10一侧以及远离衬底10一侧的均进行曝光处理即可。也即是说，可以先利用第一曝光装置100对黑矩阵薄膜20远离衬底10一侧进行曝光处理，再利用第二曝光装置200对黑矩阵薄膜20靠近衬底10一侧进行曝光处理。或者，可以先利用第二曝光装置200对黑矩阵薄膜20远离衬底10一侧进行曝光处理，再利用第一曝光装置100对黑矩阵薄膜20靠近衬底10一侧进行曝光处理。也即是说，该系统可以首先实现对黑矩阵薄膜20远离衬底10一侧进行曝光处理，也可以首先实现对黑矩阵薄膜20靠近衬底10一侧进行曝光处理。
根据本公开的实施例，气浮装置210用于在第二曝光装置200对黑矩阵薄膜20靠近衬底10一侧进行第二曝光处理时，对衬底10进行支撑。由此，在黑矩阵薄膜20靠近衬底10一侧进行曝光处理时，可以在支撑衬底10的同时，不影响第二曝光处理。根据本公开的实施例，参考图5，可以首先利用第一曝光装置100，在黑矩阵薄膜20远离衬底10的一侧，对黑矩阵薄膜20进行第一曝光处理，然后，利用气浮装置210对衬底10进行支撑，在黑矩阵薄膜20靠近衬底10的一侧利用第二曝光装置200对矩阵薄膜20进行第二曝光处理。气浮装置210可以不遮挡第二曝光处理的光源从衬底10远离黑矩阵薄膜20的一侧向黑矩阵薄膜20进行照射。总之，根据本公开的实施例，第一曝光处理与第二曝光处理的先后顺序不受特别限制，即对黑矩阵薄膜20远离衬底10的一侧与黑矩阵薄膜20靠近衬底10一侧分别进行曝光处理(双面曝光)。
根据本公开的实施例，第二透光图案(如图5中所示的E)在衬底10上的正投影位于第一透光图案(如图5中所示的D)在衬底10上的正投影区域内，即第二透光图案在衬底10上的正投影的边缘与第一透光图案在衬底10上的正投影边缘有1-2微米的距离，由此，可以使第二透光图案在衬底10上的正投影位于第一透光图案在衬底10上的正投影区域内，降低对于掩膜板对位精度的要求。本领域技术人员能够理解的是，第二曝光装置200是用于提 高待曝光衬底10的背面曝光量，以便提高最终形成的黑矩阵30与衬底10的接触面积的，并提高黑矩阵30与衬底10的附着力。因此，令第二透光图案在衬底10上的正投影位于第一透光图案在衬底10上的正投影区域内，可以降低第二掩膜板220的对位精度。如果第二透光图案在衬底10上的正投影部分位于第一透光图案在衬底10上的正投影区域外，将增大底部光刻胶的聚合程度，使黑矩阵30下表面面积大于上表面面积，从而使黑矩阵30的线宽增大，无法满足高像素密度产品的要求。如果第二透光图案在衬底10上的正投影与第一透光图案在衬底10上的正投影区域重合，即第二透光图案在衬底10上的正投影的边缘与第一透光图案在衬底10上的正投影边缘完全重合，将需要更高的对位精度，即第二掩膜板220中第二透光图案与第一掩膜板110中第一透光图案需要精准对位，如果产生对位误差，从而使黑矩阵30的线宽增大，同样无法满足高像素密度产品的要求。因此，使得第二透光图案在衬底10上的正投影位于第一透光图案在衬底10上的正投影区域内，即第二透光图案在衬底10上的正投影的边缘与第一透光图案在衬底10上的正投影边缘有1-2微米的距离，可以满足更细线宽的要求的同时，降低第二掩膜板220的对位精度。由此，可以进一步提高该系统的双面曝光效果，提高产品良率。
根据本公开的实施例，第一曝光装置100和第二曝光装置200进行曝光的具体类型不受特别限制，只需满足黑矩阵30的制备需求即可，例如可以为紫外线曝光。
总的来说，在传统的制备黑矩阵30的系统中，参考图6中的(a)-(c)，首先在衬底10上形成黑矩阵薄膜20。然后利用第一掩膜板110，在黑矩阵薄膜20远离衬底10的一侧，对黑矩阵薄膜20进行曝光处理，即对黑矩阵薄膜20的顶部进行单面曝光。最后对经过单面曝光的黑矩阵薄膜20进行显影处理，形成黑矩阵30。该单面曝光的黑矩阵30的底部与衬底10的附着力小，容易剥离，产品良率降低，无法得到更细的线宽，从而无法满足高像素密度产品的要求。
根据本公开的具体实施例，参考图5，该制备黑矩阵30的系统首先在衬底10上形成黑矩阵薄膜20。然后利用第一掩膜板110，在黑矩阵薄膜20远离衬底10的一侧，对黑矩阵薄膜20进行第一曝光处理，即对黑矩阵薄膜20的顶部进行第一曝光处理(单面曝光)。接着利用气浮装置210对衬底10 进行支撑，对黑矩阵薄膜20进行第二曝光处理，第二曝光处理是利用第二掩膜板220，在黑矩阵薄膜20靠近衬底10的一侧，对黑矩阵薄膜20进行第二曝光处理，即对黑矩阵薄膜20的底部进行第二曝光处理(背面曝光)。最后，利用显影装置300，对经过第一曝光处理和第二曝光处理的黑矩阵薄膜20进行显影处理，形成黑矩阵30。由此，可以简便的对待刻蚀黑矩阵薄膜20进行双面曝光，增加黑矩阵30与衬底10的附着力，减弱显影程度，从而得到更细的线宽，保证高像素密度的要求。
综上所述，利用前面描述的方法制备的黑矩阵30产品良率高，满足了更细线宽的要求，从而有利于得到像素密度值高、拟真度高、画面的细节更丰富的显示效果。
本公开的一些实施例提出了一种显示基板，该显示基板包括黑矩阵。根据本公开的实施例，黑矩阵是利用前面描述的方法制备的。由此，该显示基板具有前面描述的黑矩阵所具有的全部特征以及优点，在此不再赘述。
本公开的一些实施例提出了一种显示装置，该显示装置包括黑矩阵。或者，该显示装置包括前面描述的显示基板。根据本公开的实施例，黑矩阵是利用前面描述的方法制备的。由此，该显示装置具有前面描述的黑矩阵所具有的全部特征以及优点，在此不再赘述。
在本公开的描述中，术语“上”、“下”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本公开而不是要求本公开必须以特定的方位构造和操作，因此不能理解为对本公开的限制。
在本说明书的描述中，参考术语“一个实施例”、“另一个实施例”等的描述意指结合该实施例描述的具体特征、结构、材料或者特点包含于本公开的至少一个实施例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。另外，需要说明的是，本说明书中，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。
以上所述仅是本公开的示范性实施方式，而非用于限制本公开的保护范 围，本公开的保护范围由所附的权利要求确定。

Claims (11)

  1. 一种制备黑矩阵的方法，包括：
    在衬底上形成黑矩阵薄膜；
    在所述黑矩阵薄膜远离所述衬底的一侧，对所述黑矩阵薄膜进行第一曝光处理；
    在所述黑矩阵薄膜靠近所述衬底的一侧，对所述黑矩阵薄膜进行第二曝光处理；
    对经过所述第一曝光处理和所述第二曝光处理的所述黑矩阵薄膜进行显影处理，形成黑矩阵。
  2. 根据权利要求1所述的方法，其中，所述黑矩阵薄膜为负性光刻胶。
  3. 根据权利要求1或2所述的方法，其中，在所述第二曝光处理过程中，采用气浮装置支撑所述衬底。
  4. 根据权利要求1-3任一项所述的方法，其中，所述第一曝光处理利用第一掩膜板进行曝光，所述第一掩膜板上具有第一透光图案；
    所述第二曝光处理利用第二掩膜板进行曝光，所述第二掩膜板上具有第二透光图案；
    在进行所述第二曝光处理时所述第二透光图案在所述衬底上的正投影位于在进行所述第一曝光处理时所述第一透光图案在所述衬底上的正投影区域内。
  5. 一种制备黑矩阵的系统，包括：
    第一曝光装置，被配置为在黑矩阵薄膜远离衬底的一侧对所述衬底上的所述黑矩阵薄膜进行第一曝光处理；
    第二曝光装置，被配置为在所述黑矩阵薄膜靠近所述衬底的一侧对所述黑矩阵薄膜进行第二曝光处理；
    显影装置，用于对经过所述第一曝光处理和所述第二曝光处理的所述黑矩阵薄膜进行显影处理，形成黑矩阵。
  6. 根据权利要求5所述的系统，其中，所述第二曝光装置包括气浮装置，用于在第二曝光处理中支撑所述衬底。
  7. 根据权利要求5或6所述的系统，其中，所述第一曝光装置包括第一 掩膜板，所述第一掩膜板上设置有第一透光图案；
    所述第二曝光装置包括第二掩膜板，所述第二掩膜板上设置有第二透光图案；
    在进行所述第二曝光处理时所述第二透光图案在所述衬底上的正投影位于在进行所述第一曝光处理时所述第一透光图案在所述衬底上的正投影区域内。
  8. 一种黑矩阵，其中，所述黑矩阵是利用权利要求1-4任一项所述的方法制备的。
  9. 根据权利要求8所述的黑矩阵，其中，所述黑矩阵靠近所述衬底一侧表面的面积，不低于所述黑矩阵远离所述衬底一侧表面面积的50％。
  10. 一种显示基板，包括权利要求8或9所述的黑矩阵。
  11. 一种显示装置，包括权利要求10所述的显示基板。
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