WO2018223473A1 - 一种oled器件及制造方法 - Google Patents

一种oled器件及制造方法 Download PDF

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WO2018223473A1
WO2018223473A1 PCT/CN2017/091664 CN2017091664W WO2018223473A1 WO 2018223473 A1 WO2018223473 A1 WO 2018223473A1 CN 2017091664 W CN2017091664 W CN 2017091664W WO 2018223473 A1 WO2018223473 A1 WO 2018223473A1
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layer
oled device
benefit
tft substrate
support column
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PCT/CN2017/091664
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English (en)
French (fr)
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李文杰
吴聪原
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深圳市华星光电技术有限公司
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Priority to US15/550,486 priority Critical patent/US10727438B2/en
Publication of WO2018223473A1 publication Critical patent/WO2018223473A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8428—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the invention is an OLED device and a manufacturing method applied in the field of liquid crystal display.
  • OLED Organic Light Emitting Diode
  • IJP Ink jet printing
  • the preparation of an OLED using IJP requires modification of the pixel defining layer and the substrate electrode so that the ink jet can accurately fall into the pixel and no overflow occurs.
  • the substrate is hydrophobicly patterned, and the droplets flow to the hydrophilic interface at a certain landing speed, and have a trace structure (trace Patten) features. Therefore, the substrate electrode of the ink-jet contact and the surface of the pixel defining layer can be subjected to hydrophilic-hydrophobic patterning (the substrate electrode is ITO, the hydrophilic surface; the pixel defining layer is a hydrophobic surface), so that the ink jet flows into the pixel.
  • the OLED device In the preparation process of the OLED device, in order to prevent the package cover from being damaged by the external force, the OLED device (such as a cathode, a polarizer, etc.) is damaged, so that the whole device has a certain pressure resistance, and the prior art usually produces on the TFT substrate. Multiple PS (photo spacer).
  • the support column has another function, namely to maintain the uniformity of the large-size panel box and avoid the appearance of Newton's rings.
  • the surface of the pixel definition layer of the substrate used for inkjet printing is hydrophobic, and the support column is Generally, it is an organic photoresist that does not spread on a hydrophobic surface; in general, the support column is placed on the cover plate, which has high requirements on the alignment accuracy of the device and is not easy to implement.
  • the present invention uses a nozzle printing method to form a support column on the protective layer of the OLED cathode to maintain a large-sized panel box thickness uniformity to avoid the appearance of Newton's rings.
  • An OLED device comprising: a TFT substrate, a coating zone, a sealant, a cover plate and a support column;
  • the coating zone is located at the center of the TFT substrate, the sealant is disposed around the coating zone, the cover plate is disposed on the coating zone and the sealant, and the support pillar is used to support the cover plate disposed on the upper surface of the coating zone.
  • the coating region includes a plurality of pixel defining layers and a substrate electrode layer which are spaced apart from each other, each of the substrate electrode layer surfaces covering the organic semiconductor layer, and the organic semiconductor layer and the pixel electrode layer are The bottom to top is sequentially covered with a cathode conductive layer and a protective layer, and the protective layer is provided with a support pillar on the upper surface of the center of each pixel defining layer.
  • the OLED device wherein the pixel defining layer has a hydrophobic property near a surface of the organic semiconductor layer.
  • the OLED device wherein the substrate electrode layer is hydrophilic near a surface of the organic semiconductor layer.
  • the support column is an organic high molecular polymer, and the organic high molecular polymer is a high viscosity polymer.
  • the viscosity of the high viscosity polymer is from 200 Pa ⁇ s to 2000 Pa ⁇ s.
  • the OLED device wherein the support column has a height of 2 to 20 ⁇ m; and a width of 1 to 100 ⁇ m.
  • a method of fabricating an OLED device includes the following steps:
  • Step 1 forming a substrate electrode layer in the center of the TFT substrate, and performing hydrophilic treatment on the surface of the substrate electrode layer;
  • Step 2 forming a pixel electrode layer on the TFT substrate, and forming a hydrophobic treatment on the surface of the pixel electrode layer;
  • Step three providing an organic semiconductor layer on the substrate electrode layer
  • Step four providing a cathode layer on the surface of the pixel electrode layer and the organic semiconductor layer;
  • Step 5 providing a protective layer on the surface of the cathode layer
  • Step six providing a support column on the upper surface of the protective layer at the center of the pixel defining layer;
  • Step 7 Apply a sealant around the TFT substrate, and cover the cover to the coating area to complete the package.
  • the method of manufacturing an OLED device wherein the organic semiconductor layer comprises a hole injection layer, a hole transport layer, an electron injection layer, and an electron transport layer, wherein the hole injection layer, the hole transport layer, the electron injection layer, and The electron transport layer is prepared by at least one method using an inkjet printing method.
  • the support column is coated on the upper surface of the center of the pixel defining layer by a nozzle extrusion UV glue, and the coating is simultaneously cured to form a support column.
  • the invention has the following advantages: the support column is arranged on the protective layer of the OLED cathode by nozzle printing, and the preparation method is simple and easy.
  • FIG. 1 is a schematic view showing the structure of an OLED device of the present invention.
  • FIG. 2 is a schematic flow chart of a method of fabricating an OLED device of the present invention.
  • the OLED device includes: a TFT substrate 1, a coating region 10, a sealant 9, a cover 8 and a support column 7;
  • the coating zone 10 is located at the center of the TFT substrate, the frame sealant 9 is disposed around the coating zone 10, the cover plate 8 is disposed on the coating zone 10 and the sealant 9 , and the support pillar 7 is used to support the cover plate 8 It is disposed on the upper surface of the coating zone 10; the support column is disposed on the upper surface of the coating zone to maintain the uniformity of the large-size panel box thickness to avoid the appearance of the Newton ring.
  • the disadvantage of high precision of the device position caused by placing the support column on the cover plate and being difficult to implement is avoided.
  • the coating region 10 includes a plurality of pixel defining layers 2 and a substrate electrode layer 3 which are spaced apart from each other on the surface of the TFT substrate 1.
  • the surface of each of the substrate electrode layers 3 covers the organic semiconductor layer 4, and the organic semiconductor layer 4 and
  • a cathode conductive layer 5 and a protective layer 6 are sequentially covered from bottom to top, and the protective layer 6 is provided on the upper surface of the center of each pixel defining layer 2 with a support post 7 for supporting the cover plate 8.
  • the support column is provided with the upper surface of the center of the pixel defining layer 2 to maintain the uniformity of the large-sized panel box thickness to avoid the appearance of the Newton ring.
  • the disadvantage of high precision of the device position caused by placing the support column on the cover plate and being difficult to implement is avoided.
  • the substrate electrode is etched to form a plurality of rectangular substrate electrode layers 3 having a trapezoidal cross section and the same interval, each of the substrate electrode layers 3 having the same cross section, and the relatively small trapezoidal bottom is in contact with the TFT substrate. .
  • a photoresist is applied between each adjacent two substrate electrodes and between the substrate electrode and the edge of the TFT substrate to form a pixel defining layer 2 having a trapezoidal cross section.
  • An organic semiconductor layer 4 is formed on the upper surface of the substrate electrode layer 3, and the organic semiconductor layer 4 is located between adjacent two pixel electrode layers 2, the thickness of the pixel electrode layer 2 being larger than the organic semiconductor layer 4 and the substrate electrode The sum of the thicknesses of the layers 3.
  • the organic semiconductor layer 4 includes a hole injection layer, a hole transport layer, an electron injection layer, and an electron transport layer (not shown), and a cathode is sequentially disposed on the upper surface of the pixel defining layer 2 and the organic semiconductor layer 4. Electrode layer 5 and protective layer 6.
  • the support column has a height of 2 to 20 ⁇ m, and the support column has a width of 2 to 100 ⁇ m.
  • the surface of the pixel defining layer 2 close to the cathode layer 5 has a hydrophobic property.
  • the substrate electrode layer 3 is hydrophilic near the surface of the organic semiconductor layer 4.
  • the support column 7 is an organic high molecular polymer, and the organic high molecular polymer is a high viscosity polymer.
  • the viscosity of the high viscosity polymer is from 200 Pa ⁇ s to 2000 Pa ⁇ s, and the polymer may be acrylic or epoxy or polydimethyloxane.
  • the protective layer is an inorganic water blocking layer, and the material thereof may be silicon oxide, silicon nitride, aluminum oxide, titanium dioxide, zinc oxide or cerium oxide.
  • the protective layer can be formed by plasma enhanced chemical vapor deposition, atomic layer deposition, or vacuum sputtering.
  • the manufacturing method of the OLED device of the present invention comprises the following steps:
  • Step 1 forming a substrate electrode on the TFT substrate, and performing hydrophilic treatment on the surface of the substrate electrode layer; the substrate electrode has a transparent conductive property, where ITO is selected, and the surface is hydrophilic after forming ITO
  • the treatment it is possible to adopt a method of irradiating an appropriate amount of UV light, or a method of taking a plasma, and a method of all surface modification.
  • Step 2 forming a pixel electrode layer on the TFT substrate, and forming a hydrophobic treatment on the surface of the pixel electrode layer; the photoresist contains free F atoms, and after the exposure and development process is finished, the F atom returns to the surface of the pixel defining layer,
  • the prepared pixel defining layer surface is hydrophobic
  • Step three providing an organic semiconductor layer on the substrate electrode layer
  • Step 4 providing a cathode layer on the surface of the pixel electrode layer and the organic semiconductor layer; that is, using vapor deposition
  • the method forms the cathode of the device.
  • Step 5 providing a protective layer on the surface of the cathode layer; the protective layer can be formed by plasma enhanced chemical vapor deposition, atomic layer deposition, and vacuum sputtering.
  • Step six providing a support column on the upper surface of the protective layer at the center of the pixel defining layer;
  • Step 7 Apply a sealant around the TFT substrate, and cover the cover to the coating area to complete the package.
  • the organic semiconductor layer includes a hole injection layer, a hole transport layer, an electron injection layer, and an electron transport layer, wherein the hole injection layer, the hole transport layer, the electron injection layer, and the electron transport layer are at least one by inkjet printing method preparation.
  • the support column is coated on the upper surface of the protective layer in the center of the pixel defining layer by a nozzle extrusion UV glue, and the coating is simultaneously cured to form a support column.

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Abstract

一种OLED器件，包括：TFT基板（1）、涂布区（2）、封框胶（3）、盖板（8）以及支撑柱（7）；其中，涂布区位于TFT基板中央，封框胶设置在涂布区四周，盖板设置在涂布区和封框胶上，支撑柱用于支撑盖板设置在涂布区上表面。将支撑柱设置在涂布区的表面，降低对位精度，便于加工，同时保持大尺寸面板盒厚度的均一性，避免了牛顿环的出现。

Description

一种OLED器件及制造方法
相关申请的交叉引用
本申请要求享有于2017年6月8日提交的名称为“一种OLED器件及制造方法”的中国专利申请，申请号为2017104291921的优先权，该申请的全部内容通过引用并入本文中。
技术领域
本发明是应用于液晶显示领域里的一种OLED器件及制造方法。
背景技术
有机发光器件OLED(Organic Light Emitting Diode)以其良好的自发光特性、高的对比度、快速响应以及柔性显示等优势，得到了广泛的应用。传统的OLED采用真空蒸镀技术，目前可实现量产化。但是该技术需要采用精细掩模版，导致材料利用率低；另外，如果对于大尺寸面板，掩模版的制备工艺饱受挑战。近些年，印刷显示技术(喷墨打印，Ink jet printing，IJP)发展迅速。IJP是OLED实现大尺寸以及低成本生产的最佳途径。
采用IJP制备OLED，需要对像素定义层以及衬底电极进行修饰，使得喷墨能够准确落入像素内，并且无溢流现象发生。现有技术中，对喷墨的液滴在不同截面的流动铺展情况进行探究，对衬底进行亲疏水性图案化，液滴在一定着落速度下，会流向亲水界面，具有形成轨迹结构(trace patten)的功能。因此，可以对喷墨接触的衬底电极以及像素定义层表面进行亲疏水图案化(衬底电极为ITO，亲水性表面；像素定义层为疏水性表面)，使得喷墨流向像素内。
在OLED器件制备过程中，为了使得封装盖板在外力撞击时不对OLED器件(比如阴极，偏振镜等)造成损伤，使得整个器件有一定的抗压能力，现有技术通常会在TFT基板上制作多个PS(photo spacer，支撑柱)。支撑柱还有另外一个作用，即保持大尺寸面板盒厚均一性，避免牛顿环出现。
喷墨打印制备的OLED所采用的基板像素定义层表面为疏水性，而支撑柱一 般为有机光阻，在疏水性表面铺展不开；一般情况会将支撑柱做在盖板上，这样就对设备的对位精度有很高的要求，且不易实施。
发明内容
为了解决上述问题，本发明用喷嘴打印的方式将支撑柱制作在OLED阴极的保护层保持大尺寸面板盒厚均一性，避免牛顿环出现。
一种OLED器件，包括：TFT基板、涂布区、封框胶、盖板以及支撑柱；
其中，所述涂布区位于TFT基板中央，封框胶设置在涂布区四周，盖板设置在涂布区和封框胶上，支撑柱用于支撑盖板设置在涂布区上表面。
所述的OLED器件，其中，涂布区包括多个相互间隔设置的像素定义层和衬底电极层，每个衬底电极层表面覆盖有机半导体层，所述有机半导体层和像素电极层上由下至上依次覆盖有阴极导电层和保护层，所述保护层位于每个像素定义层中央的上表面设置支撑柱。
所述的OLED器件，其中，所述像素定义层靠近有机半导体层的表面具有疏水特性。
所述的OLED器件，其中，所述衬底电极层靠近有机半导体层的表面具有亲水性。
所述的OLED器件，其中，所述支撑柱为有机高分子聚合物，所述有机高分子聚合物为高粘度聚合物。
所述的OLED器件，其中，所述高粘度聚合物的粘度为200Pa·s～2000Pa·s。
所述的OLED器件，其中，所述支撑柱的高度为2～20μm；宽度为1～100μm。
一种OLED器件的制造方法包括以下步骤：
步骤一、在TFT基板中央形成衬底电极层，并对衬底电极层表面进行亲水性处理；
步骤二、在TFT基板上形成像素电极层，并对像素电极层的表面形成疏水性处理；
步骤三、在衬底电极层上设置有机半导体层；
步骤四、在所述像素电极层和有机半导体层表面设置阴极层；
步骤五、在所述阴极层表面设置保护层；
步骤六、在保护层位于像素定义层中央的上表面设置支撑柱；
步骤七、在TFT基板四周涂布封框胶，将盖板盖至涂布区上完成封装。
所述的OLED器件的制造方法，其中，所述有机半导体层包括空穴注入层、空穴传输层、电子注入层和电子传输层，其中空穴注入层、空穴传输层、电子注入层和电子传输层至少由一个采用喷墨打印方法制备。
所述的OLED器件的制造方法，其中，所述支撑柱采用喷嘴挤出UV胶的方法涂布在所述保护层位于像素定义层中央的上表面上，涂布同时进行固化，形成支撑柱。
本发明具有以下优点：采用喷嘴打印的方式将支撑柱设置在OLED阴极的保护层上面，制备方法简单易行。
附图说明
在下文中将基于实施例并参考附图来对本发明进行更详细的描述。其中：
图1是本发明OLED器件的结构示意图。
图2是本发明OLED器件制造方法流程示意图。
在附图中，相同的部件使用相同的附图标记。附图并未按照实际的比例。
具体实施方式
下面将结合附图对本发明作进一步说明。
如图1所示，为本发明OLED器件结构示意图，所述的OLED器件包括：TFT基板1、涂布区10、封框胶9、盖板8以及支撑柱7；
其中，所述涂布区10位于TFT基板中央，封框胶9设置在涂布区10四周，盖板8设置在涂布区10和封框胶9上，支撑柱7用于支撑盖板8设置在涂布区10上表面；将支撑柱设置在涂布区上表面，保持大尺寸面板盒厚均一性，避免牛顿环出现。避免了将支撑柱设置在盖板上造成的设备位精度有高，且不易实施的缺点。
其中，涂布区10包括多个相互间隔设置在TFT基板1表面的像素定义层2和衬底电极层3，每个衬底电极层3表面覆盖有机半导体层4，所述有机半导体层4和像素定义层2上由下至上依次覆盖有阴极导电层5和保护层6，所述保护层6位于每个像素定义层2中央的上表面设置有用于支撑盖板8的支撑柱7。将 支撑柱设置像素定义层2中央的上表面，保持大尺寸面板盒厚均一性，避免牛顿环出现。避免了将支撑柱设置在盖板上造成的设备位精度有高，且不易实施的缺点。
衬底电极经蚀刻后形成多个横截面为梯形且间隔相同的多个长方形衬底电极层3，所述每个衬底电极层3的横截面相同，梯形相对较小的底与TFT基板接触。在每相邻两个衬底电极之间和衬底电极与TFT基板边缘之间涂布光阻，形成像素定义层2，所述像素定义层2为横截面为梯形的结构。在所述衬底电极层3上表面形成有机半导体层4，所述有机半导体层4位于相邻两像素电极层2之间，所述像素电极层2的厚度大于有机半导体层4和衬底电极层3的厚度之和。所述有机半导体层4包括：空穴注入层、空穴传输层、电子注入层和电子传输层(图中未绘制出)，在所述像素定义层2和有机半导体层4上表面依次设置阴极电极层5和保护层6。所述的支撑柱的高度为2～20μm，支撑柱的宽度为2～100μm。
所述像素定义层2靠近阴极层5的表面具有疏水特性。
所述衬底电极层3靠近有机半导体层4的表面具有亲水性。
所述支撑柱7为有机高分子聚合物，所述有机高分子聚合物为高粘度聚合物。
所述高粘度聚合物的粘度为200Pa·s～2000Pa·s，所述的聚合物可以是亚克力或环氧树脂或聚二甲基氧烷等。
所述保护层为无机阻水层，其材质可以是氧化硅、氮化硅、三氧化二铝、二氧化钛、氧化锌或二氧化铈等。保护层可以采用等离子体增强化学汽相沉积、原子层沉积、真空喷镀的方式制成。
如图2所示，为本发明OLED器件的制造方法，包括以下步骤：
步骤一、在TFT基板上形成衬底电极，并对衬底电极层表面进行亲水性处理；所述衬底电极具有透明导电的特性，这里选择ITO，形成ITO之后对其表面进行亲水性处理，可以采取照适量UV光的方法，或者采取等离子体的方法，以及一切表面改性的方法。
步骤二、在TFT基板上形成像素电极层，并对像素电极层的表面形成疏水性处理；所述光阻含有游离的F原子，曝光显影制程结束之后，F原子回到像素定义层表面，因此制备的像素定义层表面具有疏水性
步骤三、在衬底电极层上设置有机半导体层；
步骤四、在所述像素电极层和有机半导体层表面设置阴极层；即采用蒸镀的 方法形成器件的阴极。
步骤五、在所述阴极层表面设置保护层；保护层可以采用等离子体增强化学汽相沉积、原子层沉积、真空喷镀的方式制成。
步骤六、在保护层位于像素定义层中央的上表面设置支撑柱；
步骤七、在TFT基板四周涂布封框胶，将盖板盖至涂布区上完成封装。
所述有机半导体层包括空穴注入层、空穴传输层、电子注入层和电子传输层，其中空穴注入层、空穴传输层、电子注入层和电子传输层至少由一个采用喷墨打印方法制备。
所述支撑柱采用喷嘴挤出UV胶的方法涂布在所述保护层位于像素定义层中央的上表面上，涂布同时进行固化，形成支撑柱。
最后说明的是，以上实施例仅用于说明本发明的技术方案而非限制，尽管参照较佳实施例对本发明进行了详细说明，本领域的普通技术人员应当理解，可以对本发明的技术方案进行修改或者等同替换，而不脱离本发明技术方案的宗旨和范围，其均应涵盖在本发明的权利要求范围当中。

Claims (10)

  1. 一种OLED器件，其中，包括：TFT基板、涂布区、封框胶、盖板以及支撑柱；
    其中，所述涂布区设置在TFT基板表面且位于TFT基板中央，封框胶环绕涂布区设置在TFT基板上，盖板设置在涂布区上方与封框胶贴合，支撑柱设置在涂布区上表面用于支撑所述盖板。
  2. 根据权利要求1所述的OLED器件，其中，所述涂布区包括多个相互间隔设置在TFT基板上的像素定义层和衬底电极层，每个衬底电极层表面覆盖有机半导体层，所述有机半导体层和像素电极层上由下至上依次覆盖有阴极导电层和保护层，所述支撑柱设置在保护层位于像素定义层中央的上表面。
  3. 根据权利要求2所述的OLED器件，其中，所述像素定义层靠近有机半导体层的表面具有疏水特性。
  4. 根据权利要求2所述的OLED器件，其中，所述衬底电极层靠近有机半导体层的表面具有亲水性。
  5. 根据权利要求2所述的OLED器件，其中，所述支撑柱为有机高分子聚合物，所述有机高分子聚合物为高粘度聚合物。
  6. 根据权利要求5所述的OLED器件，其中，所述高粘度聚合物的粘度为200Pa·s～2000Pa·s。
  7. 根据权利要求1所述的OLED器件，其中，所述支撑柱的高度为2～20μm；宽度为1～100μm。
  8. 一种OLED器件的制造方法，其中，包括以下步骤：
    步骤一、在TFT基板上形成衬底电极层，并对衬底电极层表面进行亲水性处理；
    步骤二、在TFT基板上形成像素电极层，并对像素电极层的表面形成疏水性处理；
    步骤三、在衬底电极层上设置机半导体层；
    步骤四、在所述像素电极层和有机半导体层表面设置阴极层；
    步骤五、在所述阴极层表面设置保护层；
    步骤六、在保护层位于像素定义层中央的上表面设置支撑柱；
    步骤七、在TFT基板四周涂布封框胶，将盖板盖至涂布区上完成封装。
  9. 根据权利要求8所述的OLED器件的制造方法，其中：所述有机半导体层包括空穴注入层、空穴传输层、电子注入层和电子传输层，其中空穴注入层、空穴传输层、电子注入层和电子传输层至少由一个采用喷墨打印方法制备。
  10. 据权利要求8所述的OLED器件的制造方法，其中：所述支撑柱采用喷嘴挤出UV胶的方法涂布在所述保护层位于像素定义层中央的上表面上，涂布同时进行固化，形成支撑柱。
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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108630829B (zh) * 2017-03-17 2019-11-08 京东方科技集团股份有限公司 显示面板的制作方法、显示面板及显示装置
CN108198843B (zh) * 2017-12-29 2020-08-04 武汉华星光电半导体显示技术有限公司 显示面板制备方法
CN108417726A (zh) * 2018-03-20 2018-08-17 深圳市华星光电半导体显示技术有限公司 Oled器件及其制作方法
CN108417738B (zh) * 2018-03-20 2019-12-24 深圳市华星光电半导体显示技术有限公司 Oled器件的制作方法
CN108493219A (zh) * 2018-03-30 2018-09-04 武汉华星光电技术有限公司 Oled显示面板以及显示装置
CN108987608B (zh) * 2018-07-24 2021-01-05 京东方科技集团股份有限公司 Oled显示面板及其制造方法、显示装置
CN109545829A (zh) * 2018-11-22 2019-03-29 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示装置
CN111312096B (zh) * 2020-04-10 2022-09-13 昆山国显光电有限公司 显示面板及显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6699728B2 (en) * 2000-09-06 2004-03-02 Osram Opto Semiconductors Gmbh Patterning of electrodes in oled devices
US7633218B2 (en) * 2006-09-29 2009-12-15 Eastman Kodak Company OLED device having improved lifetime and resolution
CN104538558A (zh) * 2014-12-25 2015-04-22 昆山国显光电有限公司 一种oled器件及其方法
CN106783933A (zh) * 2016-12-30 2017-05-31 上海天马微电子有限公司 一种显示面板、装置以及制作方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060290276A1 (en) * 2005-06-22 2006-12-28 Eastman Kodak Company OLED device having spacers
KR100829753B1 (ko) * 2007-03-02 2008-05-15 삼성에스디아이 주식회사 유기 발광 디스플레이장치
US7564067B2 (en) * 2007-03-29 2009-07-21 Eastman Kodak Company Device having spacers
KR101997122B1 (ko) * 2012-07-27 2019-07-08 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
CN103872089B (zh) 2014-02-28 2016-11-02 京东方科技集团股份有限公司 一种显示面板及其制备方法、显示装置
CN104538429B (zh) * 2014-12-26 2019-07-02 深圳市华星光电技术有限公司 Amoled背板的制作方法及其结构
TWI606771B (zh) * 2015-04-01 2017-11-21 群創光電股份有限公司 顯示面板

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6699728B2 (en) * 2000-09-06 2004-03-02 Osram Opto Semiconductors Gmbh Patterning of electrodes in oled devices
US7633218B2 (en) * 2006-09-29 2009-12-15 Eastman Kodak Company OLED device having improved lifetime and resolution
CN104538558A (zh) * 2014-12-25 2015-04-22 昆山国显光电有限公司 一种oled器件及其方法
CN106783933A (zh) * 2016-12-30 2017-05-31 上海天马微电子有限公司 一种显示面板、装置以及制作方法

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