WO2018223425A1 - 太阳能电池光伏模块及太阳能电池光伏组件 - Google Patents

太阳能电池光伏模块及太阳能电池光伏组件 Download PDF

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Publication number
WO2018223425A1
WO2018223425A1 PCT/CN2017/089372 CN2017089372W WO2018223425A1 WO 2018223425 A1 WO2018223425 A1 WO 2018223425A1 CN 2017089372 W CN2017089372 W CN 2017089372W WO 2018223425 A1 WO2018223425 A1 WO 2018223425A1
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Prior art keywords
solar cell
inter
photovoltaic module
strip
sheet
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PCT/CN2017/089372
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English (en)
French (fr)
Inventor
张雨军
陶爱兵
唐洪
沈佳
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苏州携创新能源科技有限公司
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Priority to BR112019006119-3A priority Critical patent/BR112019006119B1/pt
Priority to MYPI2019001966A priority patent/MY197283A/en
Priority to US16/330,750 priority patent/US20190189823A1/en
Priority to EP17912708.9A priority patent/EP3637477B1/en
Priority to JP2019517249A priority patent/JP6932186B2/ja
Priority to AU2017417637A priority patent/AU2017417637B2/en
Publication of WO2018223425A1 publication Critical patent/WO2018223425A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the present invention relates to the field of solar cell technologies, and in particular, to a solar cell photovoltaic module and a solar cell photovoltaic module.
  • the arrangement of the battery sheets is as follows: the chip spacing is 2 mm, the string spacing is 3 mm, the blank area of the entire solar cell module is relatively large, and the power generation utilization rate is not high.
  • the laminated component is designed, the power is improved, but the stack is increased.
  • the chip assembly increases the usage of the battery piece, and the battery piece of the laminated piece cannot generate electricity, which causes the component cost to be greatly improved, so the cost performance is not high;
  • the conventional components adopt the whole piece of welding, and the current of the battery piece is relatively large, which actually causes the internal consumption of the component to increase exponentially, and the power is not improved.
  • the interconnecting strip used in the design becomes thicker, corresponding to the resistance of the battery sheet. The ability to crack cracks is reduced, but at the same time it causes an increase in component costs;
  • the battery is mostly made up of 4 main grids and 5 main grids.
  • the width of the main grid is 1.1mm and 0.8mm respectively.
  • the width of the main grid is relatively large, which reduces the actual illumination area of the cell, and thus reduces the cell.
  • Power although a 12-gate cell assembly is designed to reduce the width of the main gate, this component has fewer solder contact faces and higher reliability potential, and the solder ribbon used for the 12-gate cell is thicker.
  • the thickness of the conventional soldering strip is increased by 40% by 0.2%.
  • the thickness of the packaging material has to be further increased, thereby increasing the component cost; in addition, the main gate material actually used, The amount of interconnecting strip material is larger, which further increases the cost; if a round solder ribbon is used, there is still no real surface contact, resulting in the actual main grid line The long-term reliability of the connection of copper-based materials is reduced.
  • the performance of the product is not an increase but a risk increase.
  • the internal circuit consists of a series of cells formed by multiple cells. If a string is abnormal, the hot spot is usually protected by a diode. The overall power loss is a whole series. In the morning, the sun rises and the afternoon falls. At the stage, it also faces the waste of blocking power generation, especially in the aspect of high-efficiency components. Therefore, it is a hidden danger that the power generation is seriously affected by the fact that the cleaning of the bird droppings, leaves and other foreign objects are not timely.
  • the efficiency of the cell polycrystalline PERC has increased to 19.5%, the single crystal is 20.8%, the N-type double-sided has been 21%, and the heterojunction has reached 22.5%.
  • the operating current of the cell rises rapidly.
  • the potential fit between the cell inside the same component is increased, and the external shielding of the potential application process or internal damage is cracked.
  • the suitability of the cell in the module is a key element in the performance of the actual long-term power generation.
  • the difference in the reflective environment on the back side of the double-sided battery module leads to fluctuations and differences in reflection and power generation output, which are factors that must be faced in order to make the difference in the fit between the components of the inter-chip battery.
  • the process uses a diode between the string and the string, and the reverse current conduction of the diode realizes current shunting and protection of the abnormal cell.
  • the start-up diode actually separates the series circuit.
  • the voltage of the whole component is reduced according to the arrangement ratio of the diode, and the single cell is partially abnormal, which causes the whole series of cells to be protected by the diode without providing power to the working circuit.
  • the damage to the amount of power generation is based on the doubling of the number of protected string cells.
  • the voltage drop of a single string further affects other parallel string loops, resulting in the impact and damage of the final output of the combiner box.
  • there is also an intelligent optimization chip design for the inter-chip string The voltage and current of each string are monitored, and the string is optimized by the chip. This can properly damage the voltage of the string, but still stay at the level of the string, and The cost of cascading optimization design is relatively high, and the actual scale of the market has not been accepted in the actual industry.
  • the amount of power generated by the component is directly related to the temperature at which the component is operating. The higher the operating temperature, the less power is generated by the component. With the current 5#, the increase in the efficiency of the cell efficiency, the rise of conventional components The working temperature actually forms a constraint on the amount of power generated.
  • the components have hot spots or cracks in the working process, or the difference in attenuation between the cells between the components is inconsistent, which will lead to internal loss and temperature rise of the components, and ultimately the power generation of the components cannot be optimized.
  • the current process of the latest components has the process design of the shingle component product.
  • the surface of the actual shingle component has no solder ribbon.
  • the whole series is blocked by the current output, and the risk of hot spot failure is intensified.
  • the tile itself needs to overlap the cells to form a circuit current output. How to compress the chip spacing close to zero in the component design, improve the conversion efficiency of the component, the advantages of the tile itself and the short board are obvious.
  • the invention provides a solar cell photovoltaic module and a solar cell photovoltaic module to solve the above technical problems existing in the existing solar cell photovoltaic module.
  • the present invention provides a solar cell photovoltaic module, comprising a plurality of matrix-arranged cells, wherein the light-receiving surface of the cell is distributed with a plurality of main gates and fine gates, and the main grid is connected to the thinner
  • the current on the gate, the current collected by the main gate is sent out through the interconnecting strip communicating with the main grid, the battery piece is rectangular, the long side of the battery piece is 156-160 mm, and the short side length is 31-54 mm.
  • the main grid is parallel to the short side of the battery sheet, and the width of the main grid is 0.4 to 0.7 mm, preferably 0.5 to 0.6 mm.
  • the battery sheet can be obtained by cutting a conventional conventional battery sheet, for example, dividing a conventional battery sheet into two to 12 pieces by parallel lines, or directly obtaining a required size of the battery piece by a silicon wafer one-time ingot casting process. .
  • the spacing between each two adjacent cells is 0-0.5 mm.
  • the interconnecting strip is divided into an inter-strip interconnect strip and a inter-strip interconnect strip, wherein the inter-strip interconnect strip transports current on the battery chip in a direction of the main gate, and the inter-string interconnect strips are parallel to each other. In series.
  • the inter-chip interconnection strips are arranged in parallel with the main gate, and the inter-string interconnection strips and the inter-slices Interconnect strips intersecting vertically and intersecting each other in series.
  • one end of the inter-chip interconnection strip is a light-receiving end, and the other end is a backlight end, the light-receiving end is connected to a main grid of the battery, and the backlight end is connected to another main backlight of the battery.
  • the inter-chip interconnection strip is used to connect two battery sheets, and two battery sheets are connected in series, and the inter-string interconnection strip is soldered on the backlight surface end.
  • the inter-sheet interconnecting strip has a width of 0.5 to 0.8 mm and a thickness of 0.12 to 0.18 mm
  • the series interconnection strip has a width of 0.5 to 6 mm and a thickness of 0.1 to 0.4 mm.
  • the inter-string interconnection strip is made of a tinned copper strip, a conductive tape or a transparent conductive film.
  • a direction parallel to a long side of the battery sheet is a horizontal direction
  • a direction parallel to a short side of the battery sheet is a longitudinal direction
  • the horizontal arrangement is a number of columns of the battery chip matrix. 6.
  • the longitudinal arrangement, that is, the number of rows of the cell matrix is 5-40, and the serial interconnection strips are set according to the density of the cell sheets per row and 1 to 3 rows.
  • the present invention also provides a solar cell photovoltaic module comprising two or more solar cell photovoltaic modules according to any one of claims 1 to 8 and a bus bar that collects the interconnect current.
  • a diode connection is usually between two adjacent solar cell photovoltaic modules or a dummy conductive line plus a diode connection is added.
  • the junction box is connected and output through the bus bar or the bus bar and the virtual conductive line. In this way, when a module fails, it can be connected through a diode or a virtual conductive line, that is, the faulty module is short-circuited to ensure normal operation of other modules.
  • the solar cell photovoltaic module is arranged along a longitudinal direction of the battery sheet, and the bus bar is parallel to a long side of the battery sheet.
  • the solar cell photovoltaic module provided by the invention has the following advantages:
  • the invention adopts a rectangular battery sheet, and the width of the battery sheet is reduced compared with the conventional battery sheet, that is, the number of fine grid rows on the single-cell battery sheet is reduced, the current collected on the main grid is reduced, and the internal consumption is squared. Reduce the power to increase the power generation;
  • the present invention since the upper side of the battery chip is short in the direction of the main gate, the current required to load on the main gate is greatly reduced, so that the width can be narrowed by 40%, the shielding area of the conductive coating is greatly reduced, and the battery sheet is increased.
  • the light receiving area of the main body further increases the power generation efficiency; on the other hand, the amount of the main gate material (silver paste) is reduced, thereby reducing the production cost;
  • connection interconnect strip material Based on the 1# internal consumption square factor reduction, a narrower and thinner connection interconnect strip material can be used for current collection.
  • interconnect strips made of ultra-thin, ultra-soft materials the alignment between the cells allows for a tight design with very small spacing.
  • the spacing between the sheets is less than 0.5mm, but it does not affect the chipping rate of the battery and the yield index of the manufacturing. It does not need to block the waste between the stacked tiles.
  • the interconnecting strip collects current, it can better overcome the potential battery application. Failure caused by process cracking. This achieves an increase in the conversion efficiency of the component, but the cost does not increase.
  • the spacing between the battery sheets is very small, the blank invalid area is reduced, and the power generation efficiency is further improved by the tight arrangement;
  • the invention realizes the wiring mode in which the battery sheets are connected in parallel and then connected in series by means of the inter-chain interconnection strips. When one battery sheet is blocked, the current can be continuously transmitted through the other battery sheets juxtaposed with it, thereby reducing the single order. The effect of the occlusion of the cell on the whole;
  • the overall conventional high current is reduced to a small current, and the heat loss index of the internal working is decreased, by balancing the battery sheet.
  • the width of the main grid line, the specific gravity of the positive silver, the thickness of the interconnecting strip, and the final shading width combined with the manufacturing capability of the string welding equipment, maximize the power output of the module while reducing the overall vertical cost of the assembly;
  • the vertical and horizontal bidirectional battery sheets can be realized through the lateral interconnection, and the design and process of the lateral shunt can well solve the adaptability difference between the above-mentioned components between the pieces of the battery.
  • Transverse interconnection, lateral shunting, without lowering the voltage also maintains the normal output of the cell, achieving extremely low external loss effects, especially for high-current high-efficiency components and long-term attenuation to improve power generation.
  • the new design can achieve more than 5% improvement in power generation, especially for the application area with high ambient temperature, which is beneficial to the rapid reduction of the photovoltaic power industry.
  • FIG. 1 is a schematic structural view showing that the light receiving surface of the battery sheet according to Embodiment 1 is not provided with an interconnection strip;
  • FIG. 2 is a schematic structural view of a backlight surface of a solar cell photovoltaic module according to Embodiment 1;
  • FIG. 3 is a partial schematic structural view of a light receiving surface of the solar cell photovoltaic module of FIG. 2;
  • FIG. 4 is a schematic view showing the connection between the inter-sheet interconnection strip and the battery sheet according to Embodiment 1;
  • FIG. 5 is a schematic structural view of a backlight surface of a horizontal solar cell photovoltaic module according to Embodiment 2;
  • FIG. 6 is a schematic structural view of a backlight surface of a vertical solar cell photovoltaic module according to Embodiment 3.
  • 10-cell sheet 21-main grid, 22-fine grid, 30-sheet interconnect strip, 31-light-receiving end, 32-backlit end, 33-string interconnect strip.
  • Embodiment 1 Solar Cell Photovoltaic Module
  • the solar cell photovoltaic module provided by the present invention comprises a plurality of matrix-arranged cell sheets. As shown in FIG. 1, each of the cell sheets 10 has a light-emitting surface with four vertical gates 21 and three horizontal grids. 22. Of course, the number of the main gate 21 and the thin gate 22 can be increased or decreased as needed. This example only gives an example, and the main gate 21 collects the current on the thin gate 22 connected thereto.
  • the battery sheet 10 is composed of The ordinary battery piece is obtained by dividing the two horizontal parallel lines equally, that is, 1/3 of the ordinary battery piece, which is rectangular, wherein the length L1 of the long side is 156.75 ⁇ 0.25 mm, which can be selected within the range of 156-160 mm, and the length of the short side L2 is 52.25 ⁇ 0.25 mm, and can be selected within the range of 31 to 54 mm.
  • the width d of the main grid 21 is 0.5 to 0.6 mm, and can be expanded to 0.4 to 0.7 mm.
  • the solar cell photovoltaic module includes a plurality of matrix-arranged cell sheets 10, which are transverse to a direction parallel to the long sides of the cell sheets 10, and a longitudinal direction parallel to the short sides of the cell sheets 10, the lateral direction.
  • the arrangement is that the number of columns of the matrix of the battery sheets 10 is six, and the vertical arrangement, that is, the number of rows of the cell matrix is seven rows.
  • the partial 2 by 2 cell matrix is taken out to enlarge, and the pitch G of the laterally longitudinally adjacent sides of each of the two adjacent cell sheets 10 is 0 to 0.5 mm.
  • the current collected by the main gate 21 is sent out through interconnect strips that communicate with the main grid 21, which are divided into inter-strip interconnect strips 30 and inter-strip interconnect strips 33.
  • one end of the inter-chip interconnection strip 30 is a light-receiving end 31, and the other end is a backlight end 32.
  • the light-receiving end 31 is directly soldered to the right battery 10
  • the backlight surface end 33 is connected to the backlight surface main grid 21 of the left side battery sheet 10.
  • the inter-chip interconnection strip 30 is used to connect two battery sheets, and two battery sheets are connected in series.
  • the inter-strip strips 33 are perpendicularly intersected with the inter-strip strips 30.
  • the inter-strip strips 33 are soldered to the backlight end 32, and may be disposed on the light-receiving end 31, in this embodiment.
  • the material of the inter-serial interconnect strips 33 is selected from tinned copper strips, and the series interconnect strips 33 are arranged in a density of one line every three rows, that is, two rows apart.
  • the width of the inter-sheet interconnecting strip 30 is in the range of 0.5-0.8 mm, and the thickness is in the range of 0.12-0.18 mm; the width of the inter-column interconnecting strip is in the range of 0.5-6 mm, and the thickness is in the range of 0.1-0.4 mm.
  • inter-string interconnection strips 33 can also be made of a conductive tape or a transparent conductive film, wherein the transparent conductive materials are interconnected on the backlight surface or the light-receiving surface to avoid the influence of the occlusion itself.
  • This design can be used for double-sided batteries, and can also be applied to cell module applications such as main gate process and ribbon process.
  • the package of the battery sheet 10 provided by the present invention can be combined with the double glass process.
  • narrow frame protection with its high water resistance, can solve the risk of potential leakage of the battery 10, and use the narrow frame protection to achieve convenient installation and low cost and high reliability of the component, especially for the process of the double-sided battery. It can solve the need for unobstructed installation of front and back.
  • the horizontal solar cell photovoltaic module comprises two solar cell photovoltaic modules 1 arranged side by side, that is, along the longitudinal direction of the cell sheet 10, and a bus bar 4 collecting the interconnect currents.
  • the bus bar 4 is parallel to the long side of the battery chip 10.
  • the two solar cell photovoltaic modules 1 are connected to a dummy conductive line 5 through a diode (not shown).
  • the dummy conductive line 5 may be a conventional thin film. Confluence belt.
  • the dummy conductive line 5 is separated from the battery sheet 10 by an insulating material.
  • the insulating isolation material may be made of a conventional EPE material or a transparent insulating EPC or a transparent back sheet to ensure that the dummy conductive wires 5 do not directly contact the battery sheet 10.
  • a junction box (not shown) is connected through the bus bar 4 and the dummy conductive line 5, wherein the junction box adopts three pin structures, and the single diode operating current is between 15A and 20A.
  • the solar cell photovoltaic module 1 in this embodiment differs from the embodiment 1 in that the series interconnecting strips 33 are densified in two rows, that is, one row.
  • the double-sided cell assembly is recommended to use a transparent insulating conductive material and a transparent conductive film material.
  • the single-sided cell assembly can be placed directly on the back side using a non-transparent, insulating conductive material and a non-transparent conductive film material.
  • the difference from the second embodiment is that in the solar cell photovoltaic module 1 disposed side by side, the number of columns of the matrix of the cell sheets 10 is three columns, and the number of rows is 20 rows.
  • a vertical solar cell photovoltaic module is provided.
  • the series interconnection strip 33 is a density that is set every three rows, that is, two rows apart.

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Abstract

本发明涉及太阳能电池技术领域，特别涉及一种太阳能电池光伏模块及太阳能电池光伏组件。所述太阳能电池光伏模块，包括若干矩阵排布的电池片，所述电池片受光面分布有若干条主栅和细栅，主栅汇集与之连接的细栅上的电流，所述主栅汇集的电流通过与主栅连通的互联条输送出去，其特征在于，所述电池片为长方形。太阳能电池光伏组件，其包括模块和汇流条，其中两个相邻的模块之间通过二极管连接或者通过增加一个虚拟导电线加上一个二极管连接，所述汇流条和所述导电线通过接线盒连接输出。本发明通过减少电池片尺寸，以减少太阳能电池片的电流，主栅变窄，使内耗成平方倍减少，从而提高发电功率。

Description

太阳能电池光伏模块及太阳能电池光伏组件 技术领域
本发明涉及太阳能电池技术领域，特别涉及一种太阳能电池光伏模块及太阳能电池光伏组件。
背景技术
随着能源价格的上涨，开发利用新能源成为当今能源领域研究的主要课题。由于太阳能具有无污染、无地域性限制、取之不竭等优点，研究太阳能发电成为开发利用新能源的主要方向。利用太阳能电池发电是当今人们使用太阳能的一种主要方式，但是现有的太阳能电池片存在如下缺点：
1.目前电池片的排布方式为：片间距为2mm，串间距为3mm，整个太阳能电池组件空白区域比较大，发电利用率不高，虽然设计了叠片组件，功率有所提高，但叠片组件增加了电池片的使用量，且叠片部分电池片无法发电，造成组件成本大大提高，因此性价比不高；
2.目前常规组件采用整片焊接，电池片的电流比较大，实际造成组件内耗成倍的增长，功率提升不上去，为了减少内损，设计采用的互联条变厚，对应对电池片的抗隐裂能力下降，但同时造成了组件成本增加；
3.目前电池片多采用4主栅，5主栅设计，其主栅的宽度分别在1.1mm，0.8mm，主栅的宽度比较大，减少了电池片的实际照射面积，进而减少了电池片的功率；虽然设计了12栅电池片组件以减小主栅的宽度，但此组件有焊接接触面少，可靠性潜在风险高，且12栅电池片用到的焊带比较厚，目前大部分采用0.39mm厚度的铜线材料，对比常规的焊带0.27mm厚度增加40％，为了减少隐裂不得不进一步增加封装材料的厚度，进而增加了组件成本；另外，实际用到的主栅材料、互联条材料的用量较大，进一步提高了成本；如果采用的是圆形的焊带，那么还存在无法实现真实的面接触，导致实际主栅线同 铜基材料的连接长期的可靠性降低。对产品的性能不是提升而是在提升风险。
4.常规组件在设计时内部电路由多片电池片形成的串联结构，若某一串出现异常，通常通过二极管进行热斑保护，整体发电损失就是整串，在早晨太阳升起和下午快落山阶段也面临遮挡发电的浪费，尤其在高效组件这方面的浪费更大些，因此，在经常有鸟粪，树叶等异物遮挡条件下清洁不及时从而导致发电量浪费是严重影响电站收益的隐患。
5.随着电池片效率的进一步提升，电池片的效率多晶PERC已经量产上升到19.5％，单晶在20.8％，N型双面已经在21％，异质结平均达到22.5％，整体电池片的工作电流上升很快，随着应用和衰减，同一块组件内部，电池片之间潜在的适配性加大，加上潜在的应用过程的外部遮挡或者内部损伤隐裂等，如何改善组件内电池片的适配性，就成为实际长期发电量性能的关键要素。另外双面电池片组件，在背面的反射环境的差异导致反射和发电输出方面的波动和差异也很大，这个都是导致组件片间电池片工作是适配性差异的必须面临的因素。
6.目前为了解决组件内部的电池片遮挡或者热斑等异常，采用的工艺有串与串之间有二极管，通过二极管的反向导通实现电流分流和保护异常电池片。但启动二极管就实际整体将串回路分离，整体组件的电压按照二极管的配置比例降低，单一电池片局部异常，就导致整体整串的电池片被二极管保护而不提供发电到工作回路。发电量的损伤是基于保护串电池片数量的倍增。另外作为集中逆变器回路，单一串的电压下降有进一步影响到其它并行串回路，导致汇流箱最终输出的影响和损伤。另外也有针对片间串的智能优化芯片的设计，对每串的电压和电流进行监控，通过芯片实现串的优化，这个可以适当将串的电压损伤，但还是停留在串的层面的改善，另外串级的优化设计增加的成本比较高，实际行业内并没有实现市场的规模化接受。
7.组件的发电量直接与组件的工作时的温度相关，工作温度越高，组件的发电量越少。随着当前5#所述，电池片效率的提升电流的上升，常规组件的 工作温度实际形成发电量的制约因素。组件在工作过程的具备热斑或者隐裂，或者组件片间电池片之间的衰减差不一致，这些都将导致组件的内部损耗和升温，最终导致组件的发电量无法实现最优化。
8.当前组件最新工艺有叠瓦组件产品工艺设计，实际叠瓦组件的表面没有焊带，在遇到电池片隐裂的情况，整串就面临电流输出受阻，热斑失效风险加剧。另外叠瓦本身需要电池片之间相互搭接形成电路电流输出。如何在组件设计上压缩片间距接近零，提升组件的转换效率，叠瓦本身的优势和短板都是很明显的。
发明内容
本发明提供一种太阳能电池光伏模块及太阳能电池光伏组件，以解决现有的太阳能电池光伏组件存在的上述技术问题。
为解决上述技术问题，本发明提供了一种太阳能电池光伏模块，包括若干矩阵排布的电池片，所述电池片受光面分布有若干条主栅和细栅，主栅汇集与之连接的细栅上的电流，所述主栅汇集的电流通过与主栅连通的互联条输送出去，所述电池片为长方形，所述电池片的长边长度为156～160mm，短边长度为31～54mm，所述主栅与所述电池片短边平行，所述主栅的宽度为0.4～0.7mm，优选为0.5～0.6mm。
需要指出的，所述电池片可以通过目前常规的电池片切割获得，比如将常规电池片由平行线平行分割为2～12片，或者通过硅片一次性铸锭工艺直接获得需要尺寸的电池片。
可选地，每两个相邻的所述电池片之间的间距为0～0.5mm。
可选地，所述互联条分为片间互联条和串间互联条，所述片间互联条沿主栅方向输送电池片上的电流，所述串间互联条将相互平行的片间互联条串联。
可选地，所述片间互联条与主栅平行排布，所述串间互联条与所述片间 互联条垂直相交，串联与之相交的片间互联条。
可选地，所述片间互联条一端为受光面端，另一端为背光面端，所述受光面端连接一电池片主栅上，所述背光面端连接另一块电池片背光面主栅上，所述片间互联条用来连接两片电池片，将两片电池片串联，所述串间互联条焊接在所述背光面端上。
可选地,所述片间互联条的宽度为0.5～0.8mm,厚度为0.12～0.18mm,所述串联互联条的宽度为0.5～6mm,厚度为0.1～0.4mm。
可选地，所述串间互联条采用镀锡铜带、导电胶带或者透明导电膜。
可选地，所述太阳能电池光伏模块中，与电池片长边平行的方向为横向，与电池片短边平行的方向为纵向，所述横向排布也就是电池片矩阵的列数为2～6，所述纵向排布也就是电池片矩阵的行数为5～40，所述串联互联条按照每行、隔1～3行电池片的密度设置。
本发明还提供了一种太阳能电池光伏组件，其包括两个以上的权利要求1～8任一所述的太阳能电池光伏模块和汇集所述互联条电流的汇流条。
为了防止因某一模块出现故障，导致组件断路而瘫痪，现有技术中一般会在两个相邻的所述太阳能电池光伏模块之间通过二极管连接或者通过增加一个虚拟导电线加上一个二极管连接，接线盒通过所述汇流条或者汇流条和所述虚拟导电线连接输出。这样在某一模块出现故障时，可通过二极管、虚拟导电线连通，也就是将故障模块短路，保证其他模块的正常工作。
可选地，所述太阳能电池光伏模块沿所述电池片长边方向排布，所述汇流条与所述电池片长边平行。
需要指出的，组件长边与电池片长边平行的方向为卧式，组件长边与电池片短边平行的方向为立式。
与现有技术相比，本发明提供的太阳能电池光伏组件具有如下优点：
1.本发明采用长方形的电池片，电池片宽度相对常规电池片减少，也就是单片电池片上细栅行数变少，减少了主栅上汇集的的电流，使内耗成平方 倍减少，从而提高发电功率；
2.本发明中，由于电池片主栅方向上边短，因此主栅上的需要负载的电流大大降低，从而可以将宽度变窄40％，大大减小了导电涂层的遮挡面积，增加电池片主体受光面积，进一步提高发电效率；另一方面减少了主栅材料(银浆)的用量，进而降低了生产成本；
3.基于1#内耗平方倍数减少下，在电流收集方面可以采用较窄较薄的连接互联条材料。通过采用超薄超软的材料制作的互联条，电池片之间的排列可以采用非常小的间距实现紧促型的设计。片间距在0.5mm以内，但不影响电池片的碎片率和制造的良率指标，无需叠瓦的电池片之间遮挡浪费，但因为有互联条收集电流，能够更好的克服潜在电池片应用过程隐裂导致的失效。这样实现组件的转换效率提升，但成本没有增加的优势。
4.本发明中，各电池片之间的间距非常小，减少了空白无效区域，通过紧密排布进一步提高发电效率；
5.本发明通过串间互联条实现了电池片先并联后串联的接线方式，在一个电池片被遮挡的情况下，电流可以通过与之并列的其他电池片传递继续输送，从而降低了因单片电池片被遮挡对整体的影响；
6.通过针对性设计电池片主栅线和焊带材料尺寸的搭配，结合小尺寸电池片，将整体常规的大电流降低为小电流，将内部工作时热损耗指数下降，通过平衡电池片的主栅线宽度，正银比重，互联条的宽度厚度，最终的遮光宽度，结合串焊设备的制造能力，实现组件功率输出的最大化，同时将组件的整体垂直一体的成本降低；
7.通过小尺寸电池片的小电流，通过横向互联实现纵横双向电池片走向，侧向分流的设计和工艺就能够很好的解决上述的组件片间电池片之间的适配性差异，通过横向互联，侧向分流，不降低电压，也维持电池片的正常输出，实现极低的外部损耗影响，尤其对大电流高效率组件及长期的衰减不一的改善发电量带来价值。对组件的早/晚的潜在遮挡后继续改善组件的发电 量。通过前期的实验测算数据，可以看到新的设计可以在发电量上实现超过5％的提升，尤其对环境温度高的应用区域更加明显，对光伏行业的度电成本的快速降低有益。
附图说明
图1为实施例1所述电池片受光面未设置互联条的结构示意图；
图2为实施例1所述太阳能电池光伏模块的背光面的结构示意图；
图3为图2所述太阳能电池光伏模块的受光面局部结构示意图；
图4为实施例1所述片间互联条与电池片连接示意图；
图5为实施例2所述卧式太阳能电池光伏组件背光面的结构示意图；
图6为实施例3所述立式太阳能电池光伏组件背光面的结构示意图。
图中：
10-电池片、21-主栅、22-细栅、30-片间互联条、31-受光面端、32-背光面端、33-串间互联条。
具体实施方式
为使本发明的上述目的、特征和优点能够更加明显易懂，下面结合附图对本发明的具体实施方式做详细的说明。需说明的是，本发明附图均采用简化的形式且均使用非精准的比例，仅用以方便、明晰地辅助说明本发明实施例的目的。
实施例1太阳能电池光伏模块
本发明提供的太阳能电池光伏模块，包括若干矩阵排布的电池片，如图1所示，每片所述电池片10受光面分布有纵行的4条主栅21和横向的32条细栅22，当然主栅21和细栅22的条数可以根据需要进行增减，本实例仅给出了一个例子，主栅21汇集与之连接的细栅22上的电流。所述电池片10是由 普通电池片由2条横向平行线平均分割获得的，也就是普通电池片的1/3，呈长方形，其中长边长度L1为156.75±0.25mm，可在156～160mm范围内选择，短边长度L2为52.25±0.25mm，可在31～54mm范围内选择，所述主栅21的宽度d为0.5～0.6mm，可扩展为0.4～0.7mm。
如图2所示，所述太阳能电池光伏模块，包括若干矩阵排布的电池片10，与电池片10长边平行的方向为横向，与电池片10短边平行的方向为纵向，所述横向排布也就是电池片10矩阵的列数为6列，所述纵向排布也就是电池片矩阵的行数为7行。
如图3所示，取出局部2乘2电池片矩阵放大，每两个相邻的所述电池片10横向纵向相邻边的间距G均为0～0.5mm。所述主栅21汇集的电流通过与主栅21连通的互联条输送出去，所述互联条分为片间互联条30和串间互联条33。
如图4所示，所述片间互联条30一端为受光面端31，另一端为背光面端32，如图2-4所示，所述受光面端31直接焊接在右侧电池片10受光面主栅21上，所述背光面端33连接左侧电池片10背光面主栅21上，所述片间互联条30用来连接两片电池片，将两片电池片串联。所述串间互联条33与所述片间互联条30垂直相交，所述串间互联条33焊接在所述背光面端32上，当然也可以设置在受光面端31上，本实施例中串间互联条33的材料选用镀锡铜带，所述串联互联条33按照每三行也就是隔2行设置一条的密度。
所述片间互联条30的宽度均在0.5～0.8mm范围内，厚度在0.12～0.18mm范围内；串间互联条宽度在0.5～6mm范围内，厚度在0.1～0.4mm范围内。
需要指出的是，所述串间互联条33还可采用导电胶带或者透明导电膜，其中透明的导电材料在背光面或者受光面进行互联连接，可以避免本身的遮挡影响。此设计可用于双面电池使用，同时也可以应用于无主栅工艺、焊带工艺等电池片组件应用上。
需要说明的是，针对本发明提供的电池片10的封装，可以结合双玻工艺 及窄边框保护，利用其高阻水的特点，能够解决电池片10对潜在漏电的风险，利用窄边框保护实现组件的便捷安装和低成本及高可靠性，尤其针对双面电池片的工艺，可解决正反面的无遮挡安装的需求。
实施例2卧式太阳能电池光伏组件
如图5所示，所述卧式太阳能电池光伏组件，包括左右并排也就是沿所述电池片10长边方向设置的两个太阳能电池光伏模块1和汇集所述互联条电流的汇流条4，所述汇流条4与所述电池片10长边平行，所述两个太阳能电池光伏模块1之间通过二极管(图中未示)连接一个虚拟导电线5，虚拟导电线5可以是常规的薄的汇流带。虚拟导电线5同电池片10之间采用绝缘材料隔离。绝缘隔离材料可以采用常规的EPE材料或者透明的绝缘EPC或者透明的背板等材料，确保虚拟导电线5不直接接触到电池片10。接线盒(图中未示)通过所述汇流条4和所述虚拟导电线5连接输出，此处接线盒采用3个pin结构，采用单体的双二极管工作电流在15A到20A之间。
本实施例中所述太阳能电池光伏模块1与实施例1中的区别在于，所述串联互联条33是每两行也就是隔行设置一条的密度。
双面电池片组件建议采用透明的绝缘导电材料和透明的导电膜材料。单面的电池片组件可以直接采用非透明的绝缘导电材料和非透明的导电膜材料，直接放置在背面。
实施例3立式太阳能电池光伏组件
如图6所示，与实施例2的区别在于，所述左右并排设置的太阳能电池光伏模块1中，电池片10矩阵的列数为3列，行数为20行。设置出了纵向太阳能电池光伏组件。所述串联互联条33是每三行也就是隔2行设置一条的密度。
显然，本领域的技术人员可以对发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包括这些改动和变型在内。

Claims (10)

  1. 一种太阳能电池光伏模块，包括若干矩阵排布的电池片，所述电池片受光面分布有若干条主栅和细栅，主栅汇集与之连接的细栅上的电流，所述主栅汇集的电流通过与主栅连通的互联条输送出去，其特征在于，所述电池片为长方形，所述电池片的长边长度为156～160mm，短边长度为31～54mm，所述主栅与所述电池片短边平行，所述主栅的宽度为0.4～0.7mm，优选为0.5～0.6mm。
  2. 如权利要求1所述的太阳能电池光伏模块，每两个相邻的所述电池片之间的间距为0～0.5mm。
  3. 如权利要求1所述的太阳能电池光伏模块，其特征在于，所述互联条分为片间互联条和串间互联条，所述片间互联条沿主栅方向输送电池片上的电流，所述串间互联条将相互平行的片间互联条串联。
  4. 如权利要求3所述的太阳能电池光伏模块，其特征在于，所述片间互联条与主栅平行排布，所述串间互联条与所述片间互联条垂直相交，串联与之相交的片间互联条。
  5. 如权利要求4所述的太阳能电池光伏模块，其特征在于，所述片间互联条一端为受光面端，另一端为背光面端，所述受光面端连接一电池片主栅上，所述背光面端连接另一块电池片背光面主栅上，所述片间互联条用来连接两片电池片，将两片电池片串联，所述串间互联条焊接在所述背光面端上。
  6. 如权利要求3所述的太阳能电池光伏模块，其特征在于，所述片间互联条的宽度为0.5～0.8mm，厚度为0.12～0.18mm，所述串联互联条的宽度为0.5～6mm，厚度为0.1～0.4mm。
  7. 如权利要求3所述的太阳能电池光伏模块，其特征在于，所述串间互联条采用镀锡铜带、导电胶带或者透明导电膜。
  8. 如权利要求1～7任一所述的太阳能电池光伏模块，其特征在于，与电 池片长边平行的方向为横向，与电池片短边平行的方向为纵向，所述横向排布也就是电池片矩阵的列数为2～6，所述纵向排布也就是电池片矩阵的行数为5～40。
  9. 一种太阳能电池光伏组件，其特征在于，包括两个以上的权利要求1～8任一所述的太阳能电池光伏模块和汇集所述互联条电流的汇流条。
  10. 如权利要求1所述的太阳能电池光伏组件，其特征在于，所述太阳能电池光伏模块沿所述电池片长边方向排布，所述汇流条与所述电池片长边平行。
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