WO2018219346A1 - Led加热方法、装置、组件及浴霸、取暖器 - Google Patents

Led加热方法、装置、组件及浴霸、取暖器 Download PDF

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Publication number
WO2018219346A1
WO2018219346A1 PCT/CN2018/089552 CN2018089552W WO2018219346A1 WO 2018219346 A1 WO2018219346 A1 WO 2018219346A1 CN 2018089552 W CN2018089552 W CN 2018089552W WO 2018219346 A1 WO2018219346 A1 WO 2018219346A1
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WIPO (PCT)
Prior art keywords
led
led chip
package
spectral converter
excitation light
Prior art date
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PCT/CN2018/089552
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English (en)
French (fr)
Inventor
李长华
余世伟
Original Assignee
苏州欧普照明有限公司
欧普照明股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201710404366.9A external-priority patent/CN107197540B/zh
Priority claimed from CN201720626800.3U external-priority patent/CN207652709U/zh
Application filed by 苏州欧普照明有限公司, 欧普照明股份有限公司 filed Critical 苏州欧普照明有限公司
Publication of WO2018219346A1 publication Critical patent/WO2018219346A1/zh

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24D—DOMESTIC- OR SPACE-HEATING SYSTEMS, e.g. CENTRAL HEATING SYSTEMS; DOMESTIC HOT-WATER SUPPLY SYSTEMS; ELEMENTS OR COMPONENTS THEREFOR
    • F24D13/00—Electric heating systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements

Definitions

  • the invention relates to the field of illumination, in particular to an LED heating method, device, component and a bath heater and a heater.
  • infrared rays have a thermal effect.
  • the energy contained in the infrared rays has a greater probability of being converted into heat by the object, thereby achieving the effect of heating the object.
  • Infrared according to its wavelength range, is divided into IR-A, IR-B, IR-C three kinds of infrared, IR-A wavelength range is 780nm-1400nm, IR-B wavelength range is 1400nm-3000nm, IR-C The wavelength range is from 3000nm to 1mm.
  • IR-A has a high penetration rate to the skin and can act on subcutaneous tissues, and higher intensity IR-A is easy to cause cataract in the eyes;
  • IR-B has a high absorption rate in human skin and can absorb energy. Larger conversion into heat;
  • IR-C has a strong health effect on the human body and is known as the light of life.
  • the method of obtaining the IR-B band is mainly by heating the filament to increase the temperature of the filament and increasing the infrared radiation; some products may also apply infrared to the bulb whose filament temperature is designed to be relatively low (for example, 1800K-2500K).
  • the powder converts some of the visible or IR-A energy into the IR-B band to increase the heating effect; and some products are coated with a metal coating on the glass shell of the sealed carbon tube, relying on the metal surface to convert a part of the product. Visible light and near-infrared to IR-B band; or through the high-temperature radiation of some gas discharge lamps to filter out the infrared part of the light.
  • the temperature of the emitter needs to be lowered to increase the energy fraction of the long-wave infrared portion, but after the temperature is lowered, the electro-long-wave infrared conversion efficiency is directly reduced.
  • the infrared band generated by such methods will cover a wide range of spectrum, and the energy that may be obtained directly covers a large range of IR-A, IR-B, and IR-C, when it is desired to obtain a certain narrow range.
  • the filter will cause a further decrease in efficiency.
  • the half-bandwidth of the band-pass filter in the infrared portion is generally wide, and it is difficult to obtain a relatively small infrared spectrum range.
  • the traditional heating method has a poor heating effect, and the energy consumption is relatively high.
  • the peak wavelength of the light emitted during heating is generally around 1050-1100 nm, and the main energy is concentrated in IR-A. This band is for the human eye. Stronger damage.
  • the present invention provides an LED heating method, apparatus, assembly, and bath, heater to overcome the above problems or at least partially solve the above problems.
  • an LED heating method comprising:
  • an LED chip that emits excitation light having a wavelength of 200-680 nm when powered up; and a spectral converter capable of emitting infrared light having a wavelength of 1400-2000 nm when excited by the excitation light is disposed around the LED chip When the LED chip emits the excitation light, the spectral converter is excited by the excitation light to emit infrared light having a wavelength of 1400-2000 nm.
  • the spectral converter comprises at least one of the following: a fluorescent material particle, a sol, a fluorescent film, a coating material capable of being excited by infrared rays having a wavelength of 1400-2000 nm.
  • the spectral converter disposed around the LED chip capable of emitting infrared light having a wavelength of 1400-2000 nm when excited by the excitation light comprises: packaging the LED chip; and encapsulating the LED chip The spectral converter is placed around.
  • the package comprises an encapsulant; the encapsulant comprises a silica gel or an epoxy resin.
  • the disposing the spectral converter around the package of the LED chip comprises: setting the spectral converter in close proximity to the package; or setting the spectral converter to the package There is a set distance.
  • the excitation light is directly emitted to the spectral converter after being emitted from the LED chip.
  • the excitation light is transmitted to the spectral converter after transmitting the set distance.
  • the LED chip and the spectral converter are both encapsulated in an LED device or a module.
  • the package is in an SMD package or a COB package or a CSP package;
  • the LED chip and the spectral converter are both packaged in an LED device or a module by using a bracket;
  • the LED chip and the spectral converter are both packaged in an LED device or a module by using a substrate;
  • the LED chip and the spectral converter are directly packaged in the LED device or module without using a bracket or a substrate.
  • the method is applicable to any one of a heater, a Yuba product, an automatic drying rack, an anti-mold wardrobe lamp, a drying and drying device or a module in the food and drug industry.
  • an LED heating apparatus comprising:
  • the LED chip is configured to emit excitation light having a wavelength of 200-680 nm when the power is turned on;
  • a spectral converter disposed around the LED chip is configured to emit infrared light having a wavelength of 1400-2000 nm when excited by the excitation light.
  • the spectral converter comprises at least one of the following: a fluorescent material particle capable of being excited to generate infrared rays having a wavelength of 1400-2000 nm, a sol, a fluorescent film, and a coating material.
  • the LED heating device further includes: a package configured to package the LED chip; and the spectral converter is disposed around the package.
  • the package comprises an encapsulant, and the encapsulant comprises a silica gel or an epoxy resin.
  • the spectral converter is disposed in close proximity to the package; or a set distance is disposed between the package.
  • the LED chip is connected to a driving power source through a metal wire, wherein the metal wire comprises any one of a gold wire, a silver wire, an alloy wire, and a copper wire.
  • the LED chip is a vertically structured chip, and the metal wire has only one wire;
  • the LED chip is a chip of a flip-chip structure, and the metal wire does not exist.
  • the device is packaged in an LED device or module.
  • the device is applicable to any one of the following: a heater, a Yuba product, an automatic drying rack, an anti-mold wardrobe lamp, a drying and drying device or a module of the food and drug industry.
  • an LED heating assembly in which any of the above LED heating devices is packaged, further comprising: an outer casing enclosing the LED heating device, wherein the outer casing comprises a bracket or a substrate.
  • a Yuba is provided in which the LED heating assembly described above is packaged.
  • a heater is provided in which the LED heating assembly described above is packaged.
  • the LED heating method, the device, the assembly, the bath heater and the heater provided by the embodiment of the invention can achieve the following beneficial effects:
  • the LED chip is first selected, and an LED chip (for example, 200-680 nm) in a stable rated range band is used.
  • an LED chip for example, 200-680 nm
  • This option enables the LED chip to obtain a stable range of wavelengths when emitting light, which is a follow-up
  • the increase in conversion rate provides the basis.
  • the embodiment of the present invention is provided with a spectral converter capable of emitting infrared rays having a wavelength of 1400-2000 nm when excited by excitation light, around the LED chip.
  • the spectral converter used in the embodiment of the invention is disposed around the LED chip, and the comprehensive acquisition of the excitation light emitted by the LED chip is ensured.
  • the excitation light emitted by the LED chip is obtained as much as possible and converted into infrared light having a high power per unit power density converted into a thermal effect in the human body, thereby improving the conversion rate of the excitation light.
  • the spectral converter is directly encapsulated around the LED chip, and even encapsulated in the LED device or module together with the LED chip, so that the heating power of the LED device or module is greatly increased. Therefore, the LED heating method provided by the embodiment of the invention greatly improves the heating function, can be used in the heating field, and has great applicable space in real life, for example, for a heater, a bath product, an automatic drying rack, and an anti-heating machine. Mold closet lights, drying and drying devices or modules in the food and drug industry.
  • FIG. 1a shows a process flow diagram of an LED heating method in accordance with one embodiment of the present invention
  • Figure 1b shows a process flow diagram of a method of heating with LEDs in accordance with one embodiment of the present invention
  • FIG. 2 is a schematic structural view of an LED heating device according to an embodiment of the present invention.
  • FIG. 3 is a schematic structural view of an LED heating assembly according to an embodiment of the present invention.
  • FIG. 4 shows a schematic diagram of spectral energy of infrared rays according to an embodiment of the present invention
  • Figure 5 is a graph showing the spectral energy comparison of the spectrum and heating bath, the infrared coated bath, and the metal coated carbon layer heating tube of the embodiment of the present invention.
  • FIG. 1a shows a process flow diagram of an LED heating method in accordance with one embodiment of the present invention.
  • the method includes at least:
  • Step S101' setting an LED chip, the LED chip emitting excitation light having a wavelength of 200-680 nm when the power is on;
  • Step S102' providing a spectral converter capable of emitting infrared light having a wavelength of 1400-2000 nm when excited by excitation light is disposed around the LED chip;
  • step S103' when the LED chip emits excitation light, the spectral converter is excited by the excitation light to emit infrared rays having a wavelength of 1400-2000 nm.
  • the LED chip is first selected, and an LED chip (for example, 200-680 nm) in a stable rated range band is used.
  • an LED chip for example, 200-680 nm
  • This option enables the LED chip to obtain a stable range of wavelengths when emitting light, which is a follow-up
  • the increase in conversion rate provides the basis.
  • the embodiment of the present invention is provided with a spectral converter capable of emitting infrared rays having a wavelength of 1400-2000 nm when excited by excitation light, around the LED chip.
  • the spectral converter used in the embodiment of the invention is disposed around the LED chip, and the comprehensive acquisition of the excitation light emitted by the LED chip is ensured.
  • the excitation light emitted by the LED chip is obtained as much as possible and converted into infrared light having a high power per unit power density converted into a thermal effect in the human body, thereby improving the conversion rate of the excitation light.
  • the spectral converter is directly encapsulated around the LED chip, and even encapsulated in the LED device or module together with the LED chip, so that the heating power of the LED device or module is greatly increased. Therefore, the LED heating method provided by the embodiment of the invention greatly improves the heating function, can be used in the heating field, and has great applicable space in real life, for example, for a heater, a bath product, an automatic drying rack, and an anti-heating machine. Mold closet lights, drying and drying devices or modules in the food and drug industry.
  • Infrared is divided into three types: IR-A, IR-B, and IR-C, and various types of functions are different.
  • the embodiment of the present invention preferably uses IR-B type infrared rays as the converted infrared rays.
  • the wavelength band of the converted infrared rays is limited to 1400-2000 nm. That is, the embodiment of the present invention can convert the excitation light in the 200-680 nm band into the infrared light in the 1400-2000 nm band by providing a spectral converter around the LED chip.
  • the use of infrared rays in the 1400-2000 nm band not only avoids the generation of IR-A bands with high risk to the human body, but also causes the emitted light to be concentrated in the IR-B band, and the infrared heat effect of this band is more remarkable.
  • the resonance frequency of the molecular CH bond close to the human body makes the heating effect of the product on the human body greatly improved, the power consumption of heating is greatly reduced, and the infrared danger is greatly reduced.
  • the spectral converter comprises at least one of the following: a fluorescent material powder, a sol, a fluorescent film material capable of being excited to generate infrared rays having a wavelength of 1400 to 2000 nm.
  • a fluorescent material powder, a sol, a fluorescent film or a coating material capable of exciting infrared rays of a wavelength of 1400-2000 nm in the excitation light of the 200-680 nm band.
  • the embodiment of the present invention preferably directly encapsulates the LED chip.
  • the specific package can select a common package glue, and the packaging step includes: first setting the package glue close to the position of the LED chip, and then setting a spectral converter around the package glue.
  • the encapsulant includes silica gel or epoxy resin.
  • Other packages, such as rubber-based encapsulants, solid encapsulants, etc., can also be selected for practical applications. Encapsulants are preferred because of their adaptability. Encapsulants are used as encapsulants in the following description.
  • setting the spectral converter around the encapsulant may be to set the spectral converter close to the encapsulant, or to set the distance between the spectral converter and the encapsulant.
  • a deformation process is set between the spectral converter and the encapsulant, and the set distance is a setting mode in which the spectral conversion material is disposed close to the encapsulant.
  • a remote excitation step is initiated for the LED chip, that is, the spectral converter is not attached to the encapsulant (or other package structure), and is completely separated from the encapsulant.
  • the method is such that the excitation light emitted by the LED chip is transmitted to the spectral converter at a relatively long distance, thereby exciting the spectral converter to emit the heating light.
  • an embodiment of the present invention also provides a method of heating using LEDs.
  • Figure 1b shows a process flow diagram of a method of heating with LEDs in accordance with one embodiment of the present invention. Referring to FIG. 1b, the method at least includes:
  • Step S101 setting an LED chip of a rated range band, and the unit power density of the excitation light emitted by the chip is lower than a threshold value in converting a human body into a thermal effect;
  • Step S102 setting a spectral converter of the heating light capable of converting the excitation light into a thermal effect and converting the unit power density into a thermal effect on the human body above a threshold value;
  • Step S103 starting the driving power supply to supply power to the chip, and driving the chip to emit excitation light
  • Step S104 Perform spectral conversion on the received excitation light by using a spectral converter, and convert it into heated light by increasing the wavelength band of the excitation light.
  • Embodiments of the present invention provide a spectral converter of heated light that is capable of converting excitation light into a unit power density at a unit power density that is converted to a thermal effect by the human body above a threshold value.
  • the spectral converter used in the embodiment of the invention is disposed around the chip to ensure the full accessibility of the excitation light emitted by the chip, and the chip is as far as possible.
  • the emitted excitation light is acquired as much as possible and converted into heating light with a unit power density that is converted into a thermal effect by the human body above a threshold value, and the conversion rate of the excitation light is increased.
  • the rated range band of the chip involved in step S101 is preferably 200-680 nm. Limiting the band of the chip to 200-680 nm allows the excitation light of the chip to be converted into heated light as much as possible.
  • Infrared is currently known as a type of light with a thermal effect, so infrared light can be selected as the heating light.
  • the received excitation light is spectrally converted by the spectral converter, and converted into infrared rays by increasing the wavelength band of the excitation light.
  • infrared rays are also classified into three types of IR-A, IR-B, and IR-C, and various types of functions are different.
  • the embodiment of the present invention preferably uses IR-B type infrared rays as the converted heating rays.
  • the wavelength band of the converted infrared rays is limited to 1400-2000 nm. That is, the embodiment of the present invention can convert the light length of the excitation light in the 200-680 nm band into the heating light of the 1400-2000 nm band by providing a spectral converter around the LED chip.
  • a plurality of spectral converters capable of converting the excitation light into a heating light having a thermal effect higher than a threshold may be disposed in a plurality of manners.
  • the embodiment of the present invention preferably directly encapsulates the chip. For specific packaging steps and the like, reference may be made to the contents of the above embodiments.
  • an embodiment of the present invention further provides an LED heating device
  • FIG. 2 shows a schematic structural view of an LED heating device according to an embodiment of the present invention.
  • the LED heating device comprises at least:
  • the LED chip 210 is configured to emit excitation light having a wavelength of 200-680 nm when the power is turned on, wherein the LED chip 210 is powered by the driving power source 220 (the driving power source is not packaged in the device heated by the LED);
  • the spectral converter 230 disposed around the LED chip 210 is configured to emit infrared light having a wavelength of 1400-2000 nm when excited by the excitation light.
  • the driving power source 220 and the LED chip 210 need to be completely connected by a metal wire to realize the power supply of the driving power source 220 to the LED chip 210, wherein the metal wire includes any one of a gold wire, a silver wire, an alloy wire, and a copper wire.
  • the metal wire includes any one of a gold wire, a silver wire, an alloy wire, and a copper wire.
  • the LED chip 210 is a vertically structured chip, there is only one metal wire; if the LED chip 210 is a flip chip, the metal wire does not exist.
  • both the LED chip 210 and the spectral converter 230 can be packaged in an LED device or module.
  • the package may be a SMD (Surface Mounted Devices) package or a COB (Chips on Board) package or a CSP (Chip Scale Package) package.
  • SMD Surface Mounted Devices
  • COB Chip on Board
  • CSP Chip Scale Package
  • the LED chip 210 and the spectral converter 230 are both packaged in the LED device or module by using the bracket.
  • the COB package the LED chip 210 and the spectral converter 230 are both packaged in the LED device or module using the substrate.
  • the CSP package is used to directly package the LED chip 210 and the spectral converter 230 in the LED device or module without a bracket or a substrate.
  • the LED heating device shown in FIG. 2 is packaged in the LED device or module, and the LED device or module further provides package LED heating.
  • Device or module housing of the device In appearance, LED devices or modules that can be used for heating or heating are not significantly different from ordinary LED devices or modules, greatly improving user acceptance, and also enabling the production of common devices or modules. Make full use of the improvement of ordinary devices or modules to achieve the generation of heating light, reducing production costs.
  • an LED device or module encapsulating the LED heating device shown in FIG. 2 is further referred to as an LED heating device or module.
  • the above LED heating method and device, and the LED heating device or module encapsulating the LED heating device shown in FIG. 2 have great application space in real life, for example, for a heater, a bath product, an automatic drying rack, Anti-mold wardrobe lights, drying and drying lamps in the food and drug industry, and so on.
  • an embodiment of the present invention further provides an apparatus for heating by using LEDs, including at least:
  • An LED chip of a rated range band configured to emit an excitation light having a unit power density at a power conversion effect of a human body to a thermal effect lower than a threshold when receiving a power supply of the driving power source (the driving power source is not packaged in a device that uses LED heating);
  • the rated range of the excitation light emitted by the chip is preferably 200-680 nm. Limiting the band of the chip to 200-680 nm allows the excitation light of the chip to be converted into heated light as much as possible.
  • the structure of the device using LED heating is similar to the structure of the LED heating device in the above, but the selection of the LED chips of the two devices is different, and the embodiment of the present invention needs to select the LED chip of the rated range band.
  • the connection between the driving power source and the chip, the packaging method of the chip and the spectral converter, and the application scenario of the device using the LED heating are similar to the LED heating device in the above, and no specific details are provided herein.
  • An embodiment of the present invention further provides an LED heating assembly in which the LED heating device shown in FIG. 2 is packaged, and further includes: an outer casing enclosing the LED heating device shown in FIG. 2, wherein the outer casing may include a bracket or a substrate.
  • the LED package comprises at least one or more LED chips emitting blue or violet or red light, an LED support or substrate, a phosphor that can be used as a spectral converter.
  • 3 shows a schematic structural view of an LED heating assembly (also referred to as an LED heating device or module) in accordance with one embodiment of the present invention.
  • 1 is a package holder, and FIG. 3 shows a typical SMD package.
  • the package holder 1 may be in the form of SMD, ceramic or aluminum nitride substrate, or aluminum substrate or other. COB and filament package.
  • Electrodes 2 and 3 are electrodes, and the material of the electrodes may be copper, iron, or other metal materials.
  • 4 is a gold wire, or a silver wire/alloy wire/copper wire. If the LED chip is of vertical structure, there may be only one gold wire 4; if the LED chip is flip-chip structure, money 4 may not exist; Figure 3 shows the case of a typical horizontal structure chip, gold There are two lines 4.
  • LED chip emitting excitation light which may be a horizontal structure chip, or a vertical structure or a flip chip structure.
  • the wavelength of the light emitted by the LED chip 5 is between 200 and 680 nm.
  • 6 is a fluorescent material powder which can be excited to generate infrared rays having a wavelength of 1400 to 2000 nm, and may be a sol or a fluorescent film or a coating material.
  • 7 is an encapsulant, which can be silicone or epoxy.
  • 8 is an excitation light emitted from the LED chip 5, and its wavelength is between 200 and 680 nm.
  • 9 is an infrared ray emitted by a special infrared fluorescent material 6 in an excited state, and its wavelength ranges from 1400 nm to 2000 nm.
  • the LED chip 5 when a certain current is applied between the electrode 2 and the electrode 3, a current flows through the LED chip 5 via the gold wire 4, and the LED chip 5 is driven by a current to emit a wavelength of 200-680 nm. Between the light 8, the LED chip 5 emits light 8 through the encapsulant 7 to the special infrared fluorescent material 6, and the infrared fluorescent material 6 is stimulated to emit the infrared ray 9.
  • the electrode 2 and the electrode 3 in FIG. 3 are used for connecting the driving power source.
  • the driving power source is not packaged in the LED heating assembly of FIG.
  • the package structure shown in FIG. 3 may be arranged on a circuit substrate of any heating device, and the circuit substrate and the driving power source of the heating device (eg, Yuba, heater, etc.) are electrically connected to supply power to the LED heating component. The infrared light after excitation is generated.
  • the infrared ray 9 produced by the product shown in Fig. 3 has a spectrum of wavelengths of 1400 nm to 2000 nm
  • Fig. 4 shows a schematic diagram of the spectral energy of infrared rays according to an embodiment of the present invention.
  • the horizontal axis of Fig. 4 represents the wavelength of infrared rays
  • the vertical axis represents the percentage of spectral energy.
  • FIG. 5 shows a comparison of the spectral energy of the spectrum of the embodiment of the present invention with a conventional heating bath, an infrared coated bath, and a metal coated carbon layer heating tube.
  • the broken line represents the spectrum of the ordinary heating bath
  • the dotted line represents the spectrum of the bath with infrared coating
  • the thin solid line represents the spectrum of the carbon layer heating tube with the metal coating
  • the thick solid line represents the embodiment of the present invention. spectrum.
  • the spectrum of the embodiment of the present invention is significantly concentrated and energy is higher than other modes.
  • Embodiments of the present invention also provide a heating LED assembly in which the apparatus for heating with LEDs as described in the above embodiments is packaged, and further includes an outer casing enclosing the apparatus, wherein the housing includes a bracket or a substrate.
  • the related content of the LED heating component in the above embodiment can be referred to, and no specific details are provided herein.
  • the embodiment of the invention further provides a Yuba, in which the LED heating assembly shown in FIG. 3 is packaged, or the heating LED assembly can also be packaged.
  • Embodiments of the present invention also provide a heater in which the LED heating assembly shown in FIG. 3 is packaged, or a heating LED assembly may also be packaged.
  • the LED heating method, the device, the assembly, the bath heater and the heater provided by the embodiment of the invention can achieve the following beneficial effects:
  • the LED chip is first selected, and an LED chip (for example, 200-680 nm) in a stable rated range band is used.
  • an LED chip for example, 200-680 nm
  • This option enables the LED chip to obtain a stable range of wavelengths when emitting light, which is a follow-up
  • the increase in conversion rate provides the basis.
  • the embodiment of the present invention is provided with a spectral converter capable of emitting infrared rays having a wavelength of 1400-2000 nm when excited by excitation light, around the LED chip.
  • the spectral converter used in the embodiment of the invention is disposed around the LED chip, and the comprehensive acquisition of the excitation light emitted by the LED chip is ensured.
  • the excitation light emitted by the LED chip is obtained as much as possible and converted into infrared light having a high power per unit power density converted into a thermal effect in the human body, thereby improving the conversion rate of the excitation light.
  • the spectral converter is directly encapsulated around the LED chip, and even encapsulated in the LED device or module together with the LED chip, so that the heating power of the LED device or module is greatly increased. Therefore, the LED heating method provided by the embodiment of the invention greatly improves the heating function, can be used in the heating field, and has great applicable space in real life, for example, for a heater, a bathroom product, an automatic drying rack, and an anti-heating device. Mold closet lights, drying and drying devices or modules in the food and drug industry.
  • modules in the devices of the embodiments can be adaptively changed and placed in one or more devices different from the embodiment.
  • the modules or units or components of the embodiments may be combined into one module or unit or component, and further they may be divided into a plurality of sub-modules or sub-units or sub-components.
  • any combination of the features disclosed in the specification, including the accompanying claims, the abstract and the drawings, and any methods so disclosed, or All processes or units of the device are combined.
  • Each feature disclosed in this specification (including the accompanying claims, the abstract and the drawings) may be replaced by alternative features that provide the same, equivalent or similar purpose.

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Abstract

本发明提供了一种LED加热方法、装置、组件及浴霸、取暖器。所述LED加热方法包括：设置LED芯片，所述LED芯片在上电工作时发出波长为200-680nm的激发光线；围绕所述LED芯片设置在受到所述激发光线激发时能够发出波长为1400-2000nm的红外线的光谱转换物；当所述LED芯片发出所述激发光线时，所述光谱转换物受到所述激发光线的激发，发出波长为1400-2000nm的红外线。采用本发明能够提高激发光线的转换率，提升了加热功能。

Description

LED加热方法、装置、组件及浴霸、取暖器 技术领域
本发明涉及照明领域，特别是涉及一种LED加热方法、装置、组件及浴霸、取暖器。
背景技术
众所周知，红外线具有热效应，当红外线照射到物体上面时，红外线包含的能量将有较大的几率被物体转换成热，从而达到对物体加热的效果。而红外线按照其波长的范围，又分成IR-A，IR-B，IR-C三种红外线，IR-A的波长范围在780nm-1400nm，IR-B的波长范围在1400nm-3000nm，IR-C的波长范围在3000nm-1mm。
通常IR-A对皮肤具有较高的穿透率，可以作用于皮下组织，且较高强度的IR-A对眼睛容易造成白内障；IR-B在人体皮肤有较高的吸收率，能够将能量较大的转换成热量；IR-C对人体有较强的保健作用，被誉为生命之光。
目前获取IR-B波段的方法主要是通过电加热灯丝，使灯丝温度上升，增加红外辐射获得；部分产品也可能在灯丝温度被设计得比较低(例如1800K-2500K温度)的灯泡上面涂敷红外粉转化一部分可见光或者IR-A部分的能量到IR-B波段，来增加加热效果；还有一部分产品通过在封泡的碳素管的玻璃壳上面涂敷金属涂层，依靠金属表层来转换一部分可见光及近红外到IR-B波段；或者通过一些气体放电灯的高温辐射来滤去其中的红外部分光线获取。
这样做的结果就是，如果需要的波段在较长的波段，则需要降低发射体的温度来增加长波红外部分的能量占比，但是降低温度之后，将直接导致电-长波红外转换效率的降低。此外，此类办法产生的红外波段，覆盖频谱范围会很广泛，可能获取的能量直接覆盖掉IR-A、IR-B、IR-C很大范围，当想要获取某一特定较窄范围内的波段的时候，需要借助滤光片。但是滤光片会造成效率的进一步下降，而目前对红外部分的带通型滤光片的半带宽一般都比较宽，也很难获取比较小的一个红外光谱范围。
所以，传统取暖方式的取暖效果较差，能耗都比较高，而且在取暖时发出光线的波段峰值一般都在1050-1100nm左右，主要能量集中在IR-A，这一波段是对人眼有较强的伤害的。
因此，更有效的LED加热方式成了亟待解决的技术问题。
发明内容
本发明提供了一种LED加热方法、装置、组件及浴霸、取暖器以克服上述问题或者至少部分地解决上述问题。
根据本发明的一个方面，提供了一种LED加热方法，包括：
设置LED芯片，所述LED芯片在上电工作时发出波长为200-680nm的激发光线；围绕所述LED芯片设置在受到所述激发光线激发时能够发出波长为1400-2000nm的红外线的光谱转换物；当所述LED芯片发出所述激发光线时，所述光谱转换物受到所述激发光线的激发，发出波长为1400-2000nm的红外线。
可选的，所述光谱转换物包括下列至少之一：能够受激发出波长为1400-2000nm的红外线的荧光材料粉粒、溶胶、荧光薄膜、涂层材料。
可选的，所述围绕所述LED芯片设置在受到所述激发光线激发时能够发出波长为1400-2000nm的红外线的光谱转换物，包括：封装所述LED芯片；在所述LED芯片的封装物周围设置所述光谱转换物。
可选的，所述封装物包括封装胶；所述封装胶包括硅胶或环氧树脂。
可选的，所述在所述LED芯片的封装物周围设置所述光谱转换物，包括：紧贴所述封装物设置所述光谱转换物；或者设置所述光谱转换物与所述封装物间有设定距离。
可选的，紧贴所述封装物设置所述光谱转换物时，所述激发光线从所述LED芯片发出后直接照射至所述光谱转换物。
可选的，当所述光谱转换物与所述封装物间有设定距离时，所述激发光线传输所述设定距离后照射至所述光谱转换物。
可选的，所述LED芯片与所述光谱转换物均封装于LED器件或模组中。
可选的，所述封装采用SMD封装或者COB封装或者CSP类封装；
其中，采用所述SMD封装时，利用支架将所述LED芯片与所述光谱转换物均封装于LED器件或模组中；
采用所述COB封装时，利用基板将所述LED芯片与所述光谱转换物均封装于LED器件或模组中；
采用所述CSP类封装，无须支架或基板，直接将所述LED芯片与所述光谱转换物均封装于LED器件或模组中。
可选的，所述方法适用于取暖器、浴霸产品、自动干燥衣架、防霉菌衣橱灯、食品药品行业的烘干干燥器件或模组中的任意之一。
根据本发明的另一个方面，提供了一种LED加热装置，包括：
LED芯片，配置为上电工作时发出波长为200-680nm的激发光线；
围绕所述LED芯片设置的光谱转换物，配置为在受到所述激发光线激发时发出波长为1400-2000nm的红外线。
可选的，所述光谱转换物包括下列至少之一：能够受激产生波长为1400-2000nm的红外线的荧光材料粉粒、溶胶、荧光薄膜、涂层材料。
可选的，上述LED加热装置还包括：封装物，配置为封装所述LED芯片；所述光谱转换物设置于所述封装物周围。
可选的，所述封装物包括封装胶，所述封装胶包括硅胶或环氧树脂。
可选的，所述光谱转换物紧贴所述封装物设置；或者，与所述封装物间设置有设定距离。
可选的，所述LED芯片通过金属导线与驱动电源连接，其中，所述金属导线包括金线、银线、合金线、铜线中的任意一种。
可选的，所述LED芯片是垂直结构的芯片，所述金属导线只有一条；
所述LED芯片是倒装结构的芯片，所述金属导线不存在。
可选的，所述装置封装于LED器件或模组中。
可选的，所述装置适用于下列任意之一：取暖器、浴霸产品、自动干燥衣架、防霉菌衣橱灯、食品药品行业的烘干干燥器件或模组。
根据本发明的再一个方面，提供了一种LED加热组件，其中封装有上述任一LED加热装置，还包括：封装所述LED加热装置的外壳，其中，所述外壳包括支架或基板。
根据本发明的又一个方面，提供了一种浴霸，其中封装有上述的LED加热组件。
根据本发明的又一个方面，提供了一种取暖器，其中封装有上述的LED加热组件。
采用本发明实施例提供的LED加热方法、装置、组件及浴霸、取暖器，可以达到如下有益效果：
在本发明实施例中，首先对LED芯片进行选择，采用的是处于稳定额定范围波段的LED芯片(例如200-680nm)，这一选择使得LED芯片在发光时能够得到稳定范围的波长，为后续转化率的提高提供了基础。然后，本发明实施例围绕LED芯片设置了受到激发光线激发时能够发出波长为1400-2000nm的红外线的光谱转换物。与现有技术中的在灯泡敷红外粉这种简单的转换方式不同，本发明实施例所采用的光谱转换物围绕LED芯片设置，保证了对LED芯片所发出的激发光线的全面获取性，将LED芯片发出的激发光线尽可能多地获取并转化成单位功率密度在人体转换成热效应的能力高的红外线，提高了激发光线的转换率。再者，本发明实施例中，光谱转换物直接封装在LED芯片周围，甚至与LED芯片共同封装在LED器件或模组中，使得这一LED器件或模组的加热功率大大增加。因此，采用本发明实施例提供的LED加热方法，大大提升了加热功能，能够用在取暖领域，在现实生活中有极大的适用空间，例如适用于取暖器、浴霸产品、自动干燥衣架、防霉菌衣橱灯、食品药品行业的烘干干燥器件或模组等等。
上述说明仅是本发明技术方案的概述，为了能够更清楚了解本发明的技术手段，而可依照说明书的内容予以实施，并且为了让本发明的上述和其它目的、特征和优点能够更明显易懂，以下特举本发明的具体实施方式。
根据下文结合附图对本发明具体实施例的详细描述，本领域技术人员将会更加明了本发明的上述以及其他目的、优点和特征。
附图说明
通过阅读下文优选实施方式的详细描述，各种其他的优点和益处对于本领域普通技术人员将变得清楚明了。附图仅用于示出优选实施方式的目的，而并不认为是对本发明的限制。而且在整个附图中，用 相同的参考符号表示相同的部件。在附图中：
图1a示出了根据本发明一个实施例的LED加热方法的处理流程图；
图1b示出了根据本发明一个实施例的利用LED加热的方法的处理流程图；
图2示出了根据本发明一个实施例的LED加热装置的结构示意图；
图3示出了根据本发明一个实施例的LED加热组件的结构示意图；
图4示出了根据本发明实施例的红外线的光谱能量示意图；以及
图5示出了本发明实施例的光谱与取暖浴霸、带红外涂层的浴霸以及带金属涂层的碳层取暖管的光谱能量对比图。
具体实施方式
下面将参照附图更详细地描述本公开的示例性实施例。虽然附图中显示了本公开的示例性实施例，然而应当理解，可以以各种形式实现本公开而不应被这里阐述的实施例所限制。相反，提供这些实施例是为了能够更透彻地理解本公开，并且能够将本公开的范围完整的传达给本领域的技术人员。
为解决上述技术问题，本发明实施例提供了一种LED加热方法。图1a示出了根据本发明一个实施例的LED加热方法的处理流程图。参见图1a，该方法至少包括：
步骤S101’、设置LED芯片，该LED芯片在上电工作时发出波长为200-680nm的激发光线；
步骤S102’、围绕LED芯片设置在受到激发光线激发时能够发出波长为1400-2000nm的红外线的光谱转换物；
步骤S103’、当LED芯片发出激发光线时，光谱转换物受到激发光线的激发，发出波长为1400-2000nm的红外线。
在本发明实施例中，首先对LED芯片进行选择，采用的是处于稳定额定范围波段的LED芯片(例如200-680nm)，这一选择使得LED芯片在发光时能够得到稳定范围的波长，为后续转化率的提高提供了基础。然后，本发明实施例围绕LED芯片设置了受到激发光线激发时能够发出波长为1400-2000nm的红外线的光谱转换物。与现有技术中的在灯泡敷红外粉这种简单的转换方式不同，本发明实施例所采用的光 谱转换物围绕LED芯片设置，保证了对LED芯片所发出的激发光线的全面获取性，将LED芯片发出的激发光线尽可能多地获取并转化成单位功率密度在人体转换成热效应的能力高的红外线，提高了激发光线的转换率。再者，本发明实施例中，光谱转换物直接封装在LED芯片周围，甚至与LED芯片共同封装在LED器件或模组中，使得这一LED器件或模组的加热功率大大增加。因此，采用本发明实施例提供的LED加热方法，大大提升了加热功能，能够用在取暖领域，在现实生活中有极大的适用空间，例如适用于取暖器、浴霸产品、自动干燥衣架、防霉菌衣橱灯、食品药品行业的烘干干燥器件或模组等等。
红外线分IR-A、IR-B、IR-C三种类型，且各种类型的功能不同。为提升加热效率，本发明实施例优选IR-B类型红外线作为转换后的红外线。为保证加热效果，转化后的红外线的波段限定为1400-2000nm。即，本发明实施例能够通过在LED芯片周围设置光谱转换物，将200-680nm波段的激发光线转化为1400-2000nm波段的红外线。进一步的，利用1400-2000nm波段的红外线，不但避免了对人体危险较高的IR-A波段的产生，而且使得发出的光线全部集中在IR-B波段，这一波段的红外线热效应更加显著，能够靠近人体组织的分子C-H键共振频率，使得产品对人体的取暖效果大幅度提升，取暖的电力消耗减少很多，同时将红外危险大幅度降低。
在本发明实施例中，光谱转换物包括下列至少之一：能够受激产生波长为1400-2000nm的红外线的荧光材料粉粒、溶胶、荧光薄膜材料。优选地，为能够受激于200-680nm波段的激发光线产生1400-2000nm波段的红外线的荧光材料粉粒、溶胶、荧光薄膜或涂层材料。
进一步的，围绕LED芯片设置光谱转换物的设置方式可以有多种，为保证LED芯片的安全性，本发明实施例优选直接封装LED芯片。具体的封装物可以选择常见的封装胶，其封装步骤包括：先在紧贴LED芯片位置设置封装胶，进而在封装胶周围设置光谱转换物。其中，封装胶包括硅胶或环氧树脂。实际应用时还可以选择其他封装物，例如橡胶类封装物、固体封装物等。封装胶因其适应性强成为优选选择。下文描述中采用封装胶作为封装物。
当然，在封装胶周围设置光谱转换物可以是紧贴封装胶设置光谱转换物，也可以在光谱转换物与封装胶间设置设定距离。其中，在光 谱转换物与封装胶间设置有设定距离是紧贴封装胶设置光谱转换物这一设置方式的变形处理。紧贴封装胶设置光谱转换物时，激发光线从LED芯片发出后直接照射至光谱转换物。而当光谱转换物与封装胶间有设定距离时，对于LED芯片而言启动了远程激发步骤，即光谱转换物不依附于封装胶(或其他封装结构)，而采用与封装胶完全分离的方式进行，使得LED芯片发出的激发光线传输较的距离照射到光谱转换物上，从而激发光谱转换物使其发射加热光线。此类形式属于本发明的一个形式变化，也在本发明所阐述的原理中。
基于同一发明构思，本发明实施例还提供了一种利用LED加热的方法。图1b示出了根据本发明一个实施例的利用LED加热的方法的处理流程图。参见图1b，该方法至少包括：
步骤S101、设置额定范围波段的LED芯片，该芯片发出的激发光线单位功率密度在人体转换成热效应的能力低于阈值；
步骤S102、围绕芯片设置能够将激发光线转化为热效应、且单位功率密度在人体上转换成热效应的能力高于阈值的加热光线的光谱转换物；
步骤S103、启动驱动电源为芯片供电，驱动芯片发出激发光线；
步骤S104、利用光谱转换物对接收的激发光线进行光谱转换，通过提高激发光线的波段将其转化为加热光线。
本发明实施例围绕芯片设置了能够将激发光线转化为单位功率密度在人体转换成热效应的能力高于阈值的加热光线的光谱转换物。与现有技术中的在灯泡敷红外粉这种简单的转换方式不同，本发明实施例所采用的光谱转换物围绕芯片设置，保证了对芯片所发出的激发光线的全面获取性，尽量将芯片发出的激发光线尽可能多地获取并转化成单位功率密度在人体转换成热效应的能力高于阈值的加热光线，提高激发光线的转换率。
在本发明实施例中，步骤S101中涉及的芯片的额定范围波段优选为200-680nm。将芯片的波段限定到200-680nm可以使得芯片的激发光线尽可能多地被转化为加热光线。
红外线目前是已知的具备热效应的光线类型，因此，可以选择红外线作为加热光线。步骤S104在实施时，利用光谱转换物对接收的激发光线进行光谱转换，通过提高激发光线的波段将其转化为红外线。 并且，背景技术中提及红外线也分IR-A、IR-B、IR-C三种类型，且各种类型的功能不同。为提升加热效率，本发明实施例优选IR-B类型红外线作为转换后的加热光线。为保证加热光线的加热效果，转化后的红外线的波段限定为1400-2000nm。即，本发明实施例能够通过在LED芯片周围设置光谱转换物，使得200-680nm波段的激发光线提升光长，转化为1400-2000nm波段的加热光线。
关于本发明实施例中的光谱转换物内容具体可以参见上文实施例，此处不做具体赘述。
本发明实施例中，围绕芯片设置能够将激发光线转化为热效应高于阈值的加热光线的光谱转换物的设置方式可以有多种，为保证芯片的安全性，本发明实施例优选直接封装芯片，具体的封装步骤等可以参见上文实施例的内容。
基于同一发明构思，本发明实施例还提供了一种LED加热装置，图2示出了根据本发明一个实施例的LED加热装置的结构示意图。参见图2，LED加热装置至少包括：
LED芯片210，配置为上电工作时发出波长为200-680nm的激发光线，其中，由驱动电源220(驱动电源并不封装在利用LED加热的装置中)为LED芯片210供电；
围绕LED芯片210设置的光谱转换物230，配置为在受到激发光线激发时发出波长为1400-2000nm的红外线。
进一步的，驱动电源220与LED芯片210间需要通过金属导线完全连接，以实现驱动电源220对LED芯片210的供电，其中，金属导线包括金线、银线、合金线、铜线中的任意一种。若LED芯片210是垂直结构的芯片，金属导线只有一条；若LED芯片210是倒装结构的芯片，金属导线不存在。
在具体的应用中，LED芯片210与光谱转换物230均可以封装于LED器件或模组中。具体地，封装可以采用SMD(Surface Mounted Devices，表面贴装器件)封装或者COB(Chips on Board，板上芯片封装)封装或者CSP(Chip Scale Package，芯片级封装)类封装。其中，采用SMD封装时，利用支架将LED芯片210与光谱转换物230均封装于LED器件或模组中。采用COB封装时，利用基板将LED芯片210与光谱转换物230均封装于LED器件或模组中。采用CSP类封装，无 须支架或基板，直接将LED芯片210与光谱转换物230均封装于LED器件或模组中。
当然，若将LED芯片210与光谱转换物230均封装于LED器件或模组，即将图2所示的LED加热装置封装于LED器件或模组中，LED器件或模组会进一步提供封装LED加热装置的器件或模组外壳。从外观上看，能够用于加热或取暖的LED器件或模组与普通LED器件或模组并无明显区别，大大提高了用户的接受度，同时也能够对已生产的普通器件或模组进行充分利用，通过对普通器件或模组的改进实现加热光线的生成，降低了生产成本。
在本发明实施例中，封装了图2所示的LED加热装置的LED器件或模组进一步被称为LED加热器件或模组。
上述的LED加热方法和装置，以及封装了图2所示的LED加热装置的LED加热器件或模组在现实生活中有极大的适用空间，例如适用于取暖器、浴霸产品、自动干燥衣架、防霉菌衣橱灯、食品药品行业的烘干干燥灯，等等。
基于同一发明构思，本发明实施例还提供了一种利用LED加热的装置，至少包括：
额定范围波段的LED芯片，配置为当接收驱动电源(驱动电源并不封装在利用LED加热的装置中)的供电时，发出单位功率密度在人体转换成热效应的能力低于阈值的激发光线；
围绕芯片设置的光谱转换物，配置为按如下方式将激发光线转化为热效应、且单位功率密度在人体转换成热效应的能力高于阈值的加热光线：利用光谱转换物对接收的激发光线进行光谱转换，通过提高激发光线的波段将其转化为加热光线。
其中，芯片发出的激发光线的额定范围波段优选为200-680nm。将芯片的波段限定到200-680nm可以使得芯片的激发光线尽可能多地被转化为加热光线。
在本发明实施例中，利用LED加热的装置的结构与上文中的LED加热装置的结构类似，但两个装置的LED芯片的选取不同，本发明实施例需要选取额定范围波段的LED芯片。此外，驱动电源与芯片的连接、芯片与光谱转换物的封装方式、以及利用LED加热的装置的应用场景等均与上文中的LED加热装置相似，此处不再做具体的赘述。
本发明实施例还提供了一种LED加热组件，其中封装有图2所示的LED加热装置，还包括：封装图2所示的LED加热装置的外壳，其中，该外壳可以包括支架或基板。
以一个具体实施例进行说明。在本发明实施例中，LED封装至少包含了一个或多个发蓝光或紫光或红光的LED芯片，一个LED支架或基板，一种可用为光谱转换物的荧光粉。图3示出了根据本发明一个实施例的LED加热组件(也称为LED加热器件或模组)的结构示意图。参见图3，1是封装支架，图3示出的是一种典型的SMD封装，封装支架1可以是SMD形式的，也可以是陶瓷或者氮化铝衬底的，也可以是铝基板或者其他COB以及灯丝等封装形式。
2和3是电极，电极的材料可以是铜，也可能是铁，或者其他金属材质。4是金线，也可以是银线/合金线/铜线。若LED芯片是垂直结构的，则金线4可能只会有一条；若LED芯片是倒装结构的，金钱4也可能不存在；图3示所示的是典型的水平结构芯片的情况，金线4有两条。
5是发出激发光线的LED芯片，可以是水平结构的芯片，也可以是垂直结构或者倒装结构的芯片。LED芯片5所发出的光线的波长在200-680nm之间。6是可以受激产生波长为1400-2000nm的红外线的荧光材料粉粒，也可以是溶胶，或者是荧光薄膜或涂层材料。7是封装胶，可以是硅胶或者环氧树脂。8是LED芯片5发出的激发光，其波长在200-680nm之间。9是特殊的红外荧光材料6在受激状态下发出的红外线，其波长范围为1400nm-2000nm。
如图3示所示，当在电极2和电极3之间施加一定的电流时，电流经由金线4，流经LED芯片5，LED芯片5在电流的驱动下，发射出波长在200-680nm之间的光线8，LED芯片5发出光线8穿过封装胶7照射到特殊的红外荧光材料6上，红外荧光材料6受激辐射出红外线9。
需要说明地是，图3中的电极2和电极3是用于连接驱动电源的，实际应用中，驱动电源并未封装在图3的LED加热组件中。在实施时，可以将图3显示的封装结构排布在任意加热设备的电路基板上，电路基板和加热设备(例如浴霸、取暖器等)的驱动电源电性连接，从而为LED加热组件供电，产生激发后的红外光。
采用图3所示的产品所生产的红外线9，其波长的光谱图集中在 1400nm-2000nm，图4示出了根据本发明实施例的红外线的光谱能量示意图。图4的横轴表示红外线的波长，纵轴表示光谱能量百分比，由图4可以看出，采用本发明实施例得到的光谱集中且能量较高。为进一步证明这一事实，图5示出了本发明实施例的光谱与普通取暖浴霸、带红外涂层的浴霸以及带金属涂层的碳层取暖管的光谱能量对比图。在图5中，虚线代表普通取暖浴霸的光谱，点画线代表带红外涂层的浴霸的光谱，细实线代表带金属涂层的碳层取暖管的光谱，粗实线代表本发明实施例的光谱。参见图5可以看出，本发明实施例的光谱明显比其他方式光谱集中且能量较高。
本发明实施例还提供了一种加热LED组件，其中封装有上文实施例介绍的利用LED加热的装置，还包括封装该装置的外壳，其中，该外壳包括支架或基板。此处，对于利用LED加热的装置的封装方式和封装过程等内容可以参见上文实施例中LED加热组件的相关内容，此处不再做具体的赘述。
本发明实施例还提供了一种浴霸，其中封装有图3所示的LED加热组件，或者也可以封装加热LED组件。
本发明实施例还提供了一种取暖器，其中封装有图3所示的LED加热组件，或者也可以封装加热LED组件。
采用本发明实施例提供的LED加热方法、装置、组件及浴霸、取暖器，可以达到如下有益效果：
在本发明实施例中，首先对LED芯片进行选择，采用的是处于稳定额定范围波段的LED芯片(例如200-680nm)，这一选择使得LED芯片在发光时能够得到稳定范围的波长，为后续转化率的提高提供了基础。然后，本发明实施例围绕LED芯片设置了受到激发光线激发时能够发出波长为1400-2000nm的红外线的光谱转换物。与现有技术中的在灯泡敷红外粉这种简单的转换方式不同，本发明实施例所采用的光谱转换物围绕LED芯片设置，保证了对LED芯片所发出的激发光线的全面获取性，将LED芯片发出的激发光线尽可能多地获取并转化成单位功率密度在人体转换成热效应的能力高的红外线，提高了激发光线的转换率。再者，本发明实施例中，光谱转换物直接封装在LED芯片周围，甚至与LED芯片共同封装在LED器件或模组中，使得这一LED器件或模组的加热功率大大增加。因此，采用本发明实施例提供的LED 加热方法，大大提升了加热功能，能够用在取暖领域，在现实生活中有极大的适用空间，例如适用于取暖器、浴霸产品、自动干燥衣架、防霉菌衣橱灯、食品药品行业的烘干干燥器件或模组等等。
在此处所提供的说明书中，说明了大量具体细节。然而，能够理解，本发明的实施例可以在没有这些具体细节的情况下实践。在一些实例中，并未详细示出公知的方法、结构和技术，以便不模糊对本说明书的理解。
类似地，应当理解，为了精简本公开并帮助理解各个发明方面中的一个或多个，在上面对本发明的示例性实施例的描述中，本发明的各个特征有时被一起分组到单个实施例、图、或者对其的描述中。然而，并不应将该公开的方法解释成反映如下意图：即所要求保护的本发明要求比在每个权利要求中所明确记载的特征更多的特征。更确切地说，如下面的权利要求书所反映的那样，发明方面在于少于前面公开的单个实施例的所有特征。因此，遵循具体实施方式的权利要求书由此明确地并入该具体实施方式，其中每个权利要求本身都作为本发明的单独实施例。
本领域那些技术人员可以理解，可以对实施例中的设备中的模块进行自适应性地改变并且把它们设置在与该实施例不同的一个或多个设备中。可以把实施例中的模块或单元或组件组合成一个模块或单元或组件，以及此外可以把它们分成多个子模块或子单元或子组件。除了这样的特征和/或过程或者单元中的至少一些是相互排斥之外，可以采用任何组合对本说明书(包括伴随的权利要求、摘要和附图)中公开的所有特征以及如此公开的任何方法或者设备的所有过程或单元进行组合。除非另外明确陈述，本说明书(包括伴随的权利要求、摘要和附图)中公开的每个特征可以由提供相同、等同或相似目的的替代特征来代替。
此外，本领域的技术人员能够理解，尽管在此所述的一些实施例包括其它实施例中所包括的某些特征而不是其它特征，但是不同实施例的特征的组合意味着处于本发明的范围之内并且形成不同的实施例。例如，在权利要求书中，所要求保护的实施例的任意之一都可以以任意的组合方式来使用。
应该注意的是上述实施例对本发明进行说明而不是对本发明进行 限制，并且本领域技术人员在不脱离所附权利要求的范围的情况下可设计出替换实施例。在权利要求中，不应将位于括号之间的任何参考符号构造成对权利要求的限制。单词“包含”不排除存在未列在权利要求中的元件或步骤。位于元件之前的单词“一”或“一个”不排除存在多个这样的元件。本发明可以借助于包括有若干不同元件的硬件以及借助于适当编程的计算机来实现。在列举了若干装置的单元权利要求中，这些装置中的若干个可以是通过同一个硬件项来具体体现。单词第一、第二、以及第三等的使用不表示任何顺序。可将这些单词解释为名称。
至此，本领域技术人员应认识到，虽然本文已详尽示出和描述了本发明的多个示例性实施例，但是，在不脱离本发明精神和范围的情况下，仍可根据本发明公开的内容直接确定或推导出符合本发明原理的许多其他变型或修改。因此，本发明的范围应被理解和认定为覆盖了所有这些其他变型或修改。

Claims (22)

  1. 一种LED加热方法，包括：
    设置LED芯片，所述LED芯片在上电工作时发出波长为200-680nm的激发光线；
    围绕所述LED芯片设置在受到所述激发光线激发时能够发出波长为1400-2000nm的红外线的光谱转换物；
    当所述LED芯片发出所述激发光线时，所述光谱转换物受到所述激发光线的激发，发出波长为1400-2000nm的红外线。
  2. 根据权利要求1所述的方法，其中，所述光谱转换物包括下列至少之一：能够受激发出波长为1400-2000nm的红外线的荧光材料粉粒、溶胶、荧光薄膜、涂层材料。
  3. 根据权利要求1所述的方法，其中，所述围绕所述LED芯片设置在受到所述激发光线激发时能够发出波长为1400-2000nm的红外线的光谱转换物，包括：
    封装所述LED芯片；
    在所述LED芯片的封装物周围设置所述光谱转换物。
  4. 根据权利要求3所述的方法，其中，
    所述封装物包括封装胶；
    所述封装胶包括硅胶或环氧树脂。
  5. 根据权利要求3所述的方法，其中，所述在所述LED芯片的封装物周围设置所述光谱转换物，包括：
    紧贴所述封装物设置所述光谱转换物；或者
    设置所述光谱转换物与所述封装物间有设定距离。
  6. 根据权利要求5所述的方法，其中，紧贴所述封装物设置所述光谱转换物时，所述激发光线从所述LED芯片发出后直接照射至所述光谱转换物。
  7. 根据权利要求5所述的方法，其中，当所述光谱转换物与所述封装物间有设定距离时，所述激发光线传输所述设定距离后照射至所述光谱转换物。
  8. 根据权利要求1所述的方法，其中，所述LED芯片与所述光谱转换物均封装于LED器件或模组中。
  9. 根据权利要求8所述的方法，其中，所述封装采用SMD封装或者COB封装或者CSP类封装；
    其中，采用所述SMD封装时，利用支架将所述LED芯片与所述光谱转换物均封装于LED器件或模组中；
    采用所述COB封装时，利用基板将所述LED芯片与所述光谱转换物均封装于LED器件或模组中；
    采用所述CSP类封装，无须支架或基板，直接将所述LED芯片与所述光谱转换物均封装于LED器件或模组中。
  10. 根据权利要求1-9任一项所述的方法，其中，所述方法适用于取暖器、浴霸产品、自动干燥衣架、防霉菌衣橱灯、食品药品行业的烘干干燥器件或模组中的任意之一。
  11. 一种LED加热装置，包括：
    LED芯片，配置为上电工作时发出波长为200-680nm的激发光线；
    围绕所述LED芯片设置的光谱转换物，配置为在受到所述激发光线激发时发出波长为1400-2000nm的红外线。
  12. 根据权利要求11所述的装置，其中，所述光谱转换物包括下列至少之一：能够受激产生波长为1400-2000nm的红外线的荧光材料粉粒、溶胶、荧光薄膜、涂层材料。
  13. 根据权利要求11所述的装置，其中，还包括：
    封装物，配置为封装所述LED芯片；
    所述光谱转换物设置于所述封装物周围。
  14. 根据权利要求13所述的装置，其中，所述封装物包括封装胶，所述封装胶包括硅胶或环氧树脂。
  15. 根据权利要求13所述的装置，其中，
    所述光谱转换物紧贴所述封装物设置；或者，与所述封装物间设置有设定距离。
  16. 根据权利要求11所述的装置，其中，所述LED芯片通过金属导线与驱动电源连接，其中，所述金属导线包括金线、银线、合金线、铜线中的任意一种。
  17. 根据权利要求16所述的装置，其中，
    所述LED芯片是垂直结构的芯片，所述金属导线只有一条；
    所述LED芯片是倒装结构的芯片，所述金属导线不存在。
  18. 根据权利要求11所述的装置，其中，所述装置封装于LED器件或模组中。
  19. 根据权利要求11-18任一项所述的装置，其中，所述装置适用于下列任意之一：取暖器、浴霸产品、自动干燥衣架、防霉菌衣橱灯、食品药品行业的烘干干燥器件或模组。
  20. 一种LED加热组件，其中封装有权利要求11-19任一项所述的LED加热装置，还包括：封装所述LED加热装置的外壳，其中，所述外壳包括支架或基板。
  21. 一种浴霸，其中封装有权利要求20所述的LED加热组件。
  22. 一种取暖器，其中封装有权利要求20所述的LED加热组件。
PCT/CN2018/089552 2017-06-01 2018-06-01 Led加热方法、装置、组件及浴霸、取暖器 WO2018219346A1 (zh)

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