WO2018216509A1 - Composition for forming conductor, conductor, production method therefor, and chip resistor - Google Patents

Composition for forming conductor, conductor, production method therefor, and chip resistor Download PDF

Info

Publication number
WO2018216509A1
WO2018216509A1 PCT/JP2018/018367 JP2018018367W WO2018216509A1 WO 2018216509 A1 WO2018216509 A1 WO 2018216509A1 JP 2018018367 W JP2018018367 W JP 2018018367W WO 2018216509 A1 WO2018216509 A1 WO 2018216509A1
Authority
WO
WIPO (PCT)
Prior art keywords
conductor
powder
forming composition
substrate
forming
Prior art date
Application number
PCT/JP2018/018367
Other languages
French (fr)
Japanese (ja)
Inventor
剛 川島
慎吾 粟ケ窪
Original Assignee
住友金属鉱山株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 住友金属鉱山株式会社 filed Critical 住友金属鉱山株式会社
Priority to CN201880034345.5A priority Critical patent/CN110663088B/en
Priority to KR1020197035129A priority patent/KR102543291B1/en
Publication of WO2018216509A1 publication Critical patent/WO2018216509A1/en

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/01Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/013Fillers, pigments or reinforcing additives
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/18Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20Oxides; Hydroxides
    • C08K3/22Oxides; Hydroxides of metals
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/40Glass
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00Use of pretreated ingredients
    • C08K9/02Ingredients treated with inorganic substances
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14Conductive material dispersed in non-conductive inorganic material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14Conductive material dispersed in non-conductive inorganic material
    • H01B1/16Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0016Apparatus or processes specially adapted for manufacturing conductors or cables for heat treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C1/00Details
    • H01C1/14Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H01C1/142Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being coated on the resistive element
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C13/00Resistors not provided for elsewhere
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/006Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistor chips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material

Definitions

  • the present invention relates to a conductor-forming composition, a conductor and a method for producing the same, and a chip resistor.
  • Conductors for forming electrodes and circuits such as electronic parts are formed by using a conductor-forming composition formed by dispersing conductive powder having high conductivity in an organic vehicle together with glass frit, for example. Is done.
  • the conductor is formed by applying the conductor-forming composition onto a ceramic substrate such as an alumina substrate in a required shape by a screen printing method or the like, drying at 120 ° C. to 150 ° C., and then at 600 ° C. to 900 ° C. It is formed by firing.
  • MLCC multilayer ceramic capacitor
  • the conductor-forming composition is applied to the outer surface of the chip component, dried, and dried.
  • MLCC multilayer ceramic capacitor
  • methods such as applying powder such as alumina have been made in the subsequent process of applying the conductor forming composition, but a process of removing the powder such as alumina after firing is necessary. , It took time and effort.
  • several proposals have been made in order to prevent bonding between the external electrode of the multilayer ceramic capacitor and another member.
  • Patent Document 1 describes that metal powder having various types of particles, for example, two kinds of large and small spherical powders and scale-like metal powders, etc. are used for the conductive paste.
  • Patent Document 2 describes a conductive paste containing a metal powder and glass frit and containing 1 to 10 wt% of a metal additive having a melting point higher than that of the metal powder. These conductive pastes suppress the sintering of the metal powder during firing, the metal component does not shrink closely, and a gap is formed between the metal components, so that the glass component that causes bonding is a conductor layer. It is described that it can be prevented from oozing out on the surface of the glass.
  • Patent Document 3 it is described that an inorganic powder having an average particle size of 0.1 mm or less is used. A method is described in which the inorganic powder is exposed to the surface of the conductor layer, thereby preventing seizure between MLCC chips or a ceramic mortar in which the MLCC chip is installed in the MLCC firing step.
  • Patent Document 4 describes a conductive paste in which the composition of the glass powder is limited in order to control the fluidity of the glass and prevent it from seeping out onto the surface of the conductor layer.
  • the above problems also occur when manufacturing chip resistors.
  • the chip resistor includes a pair of conductors (surface electrode and back electrode) provided on the front and back surfaces of the substrate, a resistor provided between the pair of surface electrodes, and an insulating protective layer covering the resistor. And a pair of end surface electrodes provided on the end surface of the substrate and conducting the front surface electrode and the back surface electrode.
  • the back electrode formed on the chip resistor is for electrically bonding the chip resistor and the circuit board when the chip resistor is mounted on the circuit board.
  • the chip resistor is manufactured by the following method, for example. First, prepare a substrate (slit substrate) with slits in a desired dimension according to the chip size in advance, and print and dry the conductor-forming composition so as to straddle the slit on this substrate, By firing, a plurality of pairs of conductors (surface electrode and back electrode) are formed on the front surface and the back surface of the substrate, respectively. Next, after forming a resistor on the surface of the substrate so that each pair of surface electrodes is disposed at both ends thereof, a glass layer called a precoat is formed on the resistor, and a protective layer is further formed thereon. For example, a resin layer is formed. Next, the substrate is divided into strips along the slits, end electrodes are formed and plated, and then the strip-like substrate is further divided to obtain chip resistors.
  • Conductors are formed into a required shape by, for example, screen-printing or the like on a substrate with a conductive composition in which an electrically conductive powder having high electrical conductivity and glass frit are dispersed in an organic vehicle. It is formed by coating and drying at about 120 ° C. to 150 ° C. and then baking at about 600 ° C. to 900 ° C. Also, in the case where conductors (surface electrode and back electrode) are formed on both sides of a substrate, conventionally, a conductor forming composition is printed on one surface of the substrate, and then dried and baked to conduct the conductor (eg, back electrode). After that, printing, drying and baking are similarly performed on the other surface of the substrate to form a conductor (for example, a surface electrode).
  • a conductor for example, a surface electrode
  • the process from drying to baking has been simplified.
  • the conductor-forming composition in the process of forming conductors (front and back electrodes), the conductor-forming composition is printed on one side of the substrate and dried to form a dry film (for example, a back dry film). Then, before firing, the conductor-forming composition is printed on the other surface of the substrate and dried to form a dry film (for example, a surface dry film). And a baking process can be skipped once by baking the dry film of both surfaces of a board
  • the dried film is baked in a belt furnace
  • the dried film is always present on the surface facing the belt, and the dried film formed on the surface facing the belt is
  • the belt portion of the belt furnace may be touched, the belt and the conductor may be joined, the conductor pattern may come off, or the conductor may adhere to the belt, making the belt furnace unusable.
  • a jig is required to prevent the dry film from touching other members.
  • JP-A-8-306580 Japanese Patent Laid-Open No. 10-12481 JP-A-9-129480 JP 2001-297628 A
  • Patent Documents 1 to 4 have the following problems when forming the conductors of the resistor (front electrode and back electrode). That is, in the conductive paste described in Patent Document 1 and Patent Document 2, a gap is formed between the metal components when the conductor is formed, so that the conductive powder is not sufficiently sintered, and the electrical resistivity of the conductor is low. It cannot easily be applied to electrodes of electronic parts such as resistors that are likely to be high and require a low-resistance conductor. Also, with these conductive pastes, the conductor is likely to become brittle, the bonding strength between components via the conductor is likely to be insufficient, and the surface of the conductor is likely to be sparse, so electrolytic plating is performed on the conductor. In such a case, there is a problem that the acidic plating solution easily enters the inside, and the glass component dissolves into the plating solution and the strength is easily lowered.
  • inorganic particles having an average particle diameter of 0.05 mm to 0.2 mm are used in the examples.
  • a conductive paste containing such large particles is used as a chip resistor.
  • an alkali metal oxide is contained in the glass powder.
  • the alkali component is It may easily enter other members and may affect the characteristics of the members.
  • the composition of the glass powder used in the conductive paste it is difficult to obtain adhesion strength to the base material when the conductor layer is formed on the ceramic as described in that it is difficult to wet the ceramic body.
  • An object of the present invention is to provide a conductor-forming composition and a method for producing the same.
  • a conductor-forming composition comprising a conductive powder, an inorganic powder other than the conductive powder, a glass frit, and an organic vehicle, wherein the inorganic powder is used for SEM measurement.
  • the average particle size is 0.3 ⁇ m or more and 5.0 ⁇ m or less, has a sintering start temperature higher than that of the conductive powder, and includes 10 parts by mass or more and 45 parts by mass or less with respect to 100 parts by mass of the conductive powder.
  • the inorganic powder preferably contains at least one of a metal powder, a metal oxide powder, and a metal powder having an oxide film.
  • the inorganic powder preferably contains at least one of copper powder, copper oxide powder, and copper powder having an oxide film.
  • an organic vehicle contains binder resin and a solvent, and binder resin is contained 1 mass% or more and 10 mass% or less with respect to the composition for conductor formation.
  • the conductive powder preferably contains at least one of Au, Ag, Pd and Pt. Further, when the conductor-forming composition is placed on a belt using a belt furnace and fired, the inorganic powder is present on the surface more than the inside of the conductor, whereby the conductive powder belt. It is preferable that seizure to the member can be prevented. Further, it is preferably used for forming at least one of a front electrode and a back electrode of the chip resistor.
  • the conductor-forming composition is applied to at least one surface of the substrate, and the substrate coated with the conductor-forming composition is dried to be contained in the conductor-forming composition. Removing at least a portion of the solvent, forming a dry film on the substrate, firing the substrate on which the dry film is formed, sintering the conductive powder contained in the conductor-forming composition, and inorganic powder Forming a conductor that is present more on the surface opposite to the surface in contact with the substrate than on the inside.
  • the conductor-forming composition contains a metal powder as an inorganic powder, and the metal powder reacts with oxygen in the atmosphere during firing to have a metal oxide powder or an oxide film. Can be formed.
  • the metal powder is preferably copper powder.
  • the conductor is formed on the substrate using the above-mentioned conductor-forming composition, and the inorganic powder is disposed in the conductor so as to be biased toward the surface opposite to the surface in contact with the substrate.
  • a conductor is provided.
  • an electronic component having a conductor formed using the above-described conductor-forming composition.
  • a chip resistor that includes at least a substrate, a conductor, and a resistor, and the conductor is formed using the above-described conductor-forming composition.
  • the conductor-forming composition of the present invention can suppress the phenomenon that the dried film obtained in the conductor production process is bonded to other members such as a belt of a belt furnace in the firing process. Moreover, the conductor pattern obtained using the conductor forming composition of the present invention can be made into a fine line. In addition, the conductor manufacturing method of the present invention can easily and efficiently produce a fine line conductor pattern. In addition, even when the conductor obtained using the conductor-forming composition is obtained by placing on a belt of a belt furnace and firing, the bonding of the conductor component to the belt is suppressed and low. It can have a resistance value.
  • FIG. 1A is a cross-sectional view schematically showing an example of a conductor formed on a substrate portion
  • FIG. 1B is an enlarged cross-sectional view of a part of the conductor.
  • FIG. 2A is a cross-sectional view schematically showing an example of a state in which the substrate portion on which the conductor is formed is placed on the belt of the belt furnace
  • FIG. 2B is an enlarged view of a part of the conductor.
  • FIG. 2C is a sectional view schematically showing a dry film (or conductor).
  • FIG. 3 is a flowchart showing an example of a conductor manufacturing method.
  • FIG. 4 is a schematic diagram illustrating an example of a chip resistor.
  • FIG. 5 is a SEM photograph showing a contact portion of the conductor of Example 1 with the belt.
  • FIG. 6 is an SEM photograph showing a contact portion of the conductor of Comparative Example 1 with the belt.
  • the conductor-forming composition of the present embodiment includes a conductive powder, an inorganic powder other than the conductive powder, a glass frit, and an organic vehicle.
  • the conductor-forming composition can suppress bonding of the obtained conductor to other members.
  • FIGS. 1 and 2 a dry film obtained using the conductor-forming composition of the present embodiment and the formed conductor will be described.
  • FIG. 1A is a schematic diagram showing an example of a conductor of the present embodiment formed on a substrate part.
  • the conductor 10 is formed in layers on one or both surfaces of the substrate unit 20.
  • the conductor 10 is formed by applying a conductor-forming composition to the substrate unit 20, drying it, and firing it.
  • substrate part 20 is a board
  • the substrate unit 20 is not particularly limited, and a known substrate can be used. For example, an alumina substrate containing alumina as a main component can be used.
  • the conductor 10 may be formed on one surface (front surface or back surface) of the board
  • FIG. 1 (B) is an enlarged view showing a portion of the conductor 10 surrounded by a broken line in FIG. 1 (A).
  • the conductor 10 includes an inorganic powder 1 and a conductor portion 2 formed by sintering conductive powder.
  • the conductor part 2 contains the metal derived from electroconductive powder, and the glass derived from a glass frit.
  • the component originating in the organic vehicle contained in the composition for conductor formation is removed by the process of drying and baking.
  • the inorganic powder 1 is disposed on the surface of the conductor 10, at least on the surface opposite to the surface where the conductor 10 and the substrate portion 20 are in contact with each other, so as to be present more than the inside. Since many inorganic powders 1 are arranged so as to be biased toward the surface of the conductor 10, the contact area between the metal component contained in the conductor 10 and another member (for example, a belt member of a belt furnace) in contact with the conductor 10 is reduced. It is possible to suppress the bonding between the other member and the metal component.
  • the thickness of the conductor 10 can be 2 ⁇ m or more and 10 ⁇ m or less, and preferably 3 ⁇ m or more and 8 ⁇ m or less.
  • the thickness of the conductor can be measured with a stylus type surface roughness meter.
  • FIG. 2 (A) to FIG. 2 (C) are diagrams schematically showing a dry film or a conductor.
  • the dry film 11 can be obtained by applying the conductor-forming composition of the present embodiment on the substrate portion 20 and drying it.
  • the obtained dry film 11 is placed on, for example, a belt member 25 of a belt furnace as shown in FIG.
  • the belt member 25 contacts at least a part of the surface of the dry film 11 formed on the substrate unit 20.
  • FIG. 2B is an enlarged schematic view showing a contact portion between the dry film 11 and the belt member 25. As shown in FIG. 2B, the inorganic powder 1 is dispersed almost uniformly in the dry film 11.
  • FIG. 2C is a schematic diagram showing the dry film 11 or the layered conductor 10 in the step of firing the dry film 11 to form the conductor 10.
  • the inorganic powder 1 moves toward the surface of the dry film 11 or the conductor portion 2 (conductor 10), and gradually appears to be present on the surface more than the inside. become.
  • the sintering start temperature of the inorganic powder 1 is higher than the sintering start temperature of the conductive powder
  • the inorganic powder 1 is used when the conductive powder is sintered in the firing step. However, it is possible to move so that it may be extruded to the outer side (surface) of the dry film
  • the inorganic powder 1 is present on the surface of the conductor 10 more than the inside.
  • the inorganic powder 1 should just exist more than the inside of the conductor 10 in the surface on the opposite side to the surface which contact
  • the inorganic powder 1 is disposed on the surface opposite to the surface in contact with the substrate portion 20 in the conductor obtained by reacting with the substrate on the surface in contact with the substrate portion 20 and alloying, for example. May be.
  • the inorganic powder 1 will be described in detail.
  • the inorganic powder 1 has an average particle size (SEM average particle size) based on scanning electron microscope (SEM) measurement of 0.3 ⁇ m or more and 5.0 ⁇ m or less.
  • SEM scanning electron microscope
  • the obtained conductor has a low resistance value, can have excellent conductivity, and can suppress the bonding of the conductor to other members.
  • the SEM average particle diameter is in the above range, it can be suitably used particularly for fine-lined electronic components.
  • the inorganic powder 1 when the SEM average particle size is less than 0.3 ⁇ m, the inorganic powder 1 may be buried in the conductor, and the joint prevention effect may be insufficient. Moreover, when the SEM average particle diameter is more than 5.0 ⁇ m, the resistivity of the obtained conductor may be increased.
  • the SEM average particle size of the inorganic powder 1 was measured using a scanning electron microscope (SEM) at a magnification at which 300 or more particles that can be seen in the entire shape of the particle can be confirmed in the photograph. The diameter of each particle was calculated from the average value of the longest diameter and the shortest diameter, and was determined by the average value of the diameters of the obtained inorganic powders (total calculated diameter of each particle / number of particles measured, number average).
  • the SEM average particle size has the same meaning in other portions.
  • the magnification when observing with SEM can be arbitrarily set as long as 300 or more can be confirmed as described above, but in the case of the inorganic powder used in the present invention, the magnification is observed in the range of 1,000 to 20,000 times. Is preferred.
  • the inorganic powder 1 may be a powder composed of particles that are not sintered when the conductor-forming composition is fired at a temperature at which the conductive powder can be sintered. That is, the inorganic powder 1 has a sintering start temperature higher than that of the conductive powder. For example, particles that are not sintered when fired (heat treated) at 120 ° C. or higher and 900 ° C. or lower in the air atmosphere can be used. When such particles are used, as described above, when the dried film formed from the conductor-forming composition is fired, the inorganic powder 1 can be distributed unevenly to the surface of the conductor.
  • the inorganic powder 1 is not particularly limited as long as it is a powder having the above characteristics, and a known powder material used for a conductor-forming composition can be used.
  • a known powder material used for a conductor-forming composition can be used.
  • the inorganic powder 1 for example, ceramic powder can be used, but preferably, at least one of metal powder, metal oxide powder, and metal powder having an oxide film can be used, more preferably. At least one of copper powder, copper oxide powder, and copper powder having an oxide film can be used.
  • a powder containing copper is used as the inorganic powder 1, most of the powder is biased to the side opposite to the surface in contact with the substrate, but the powder remaining on the substrate side also has an effect of improving the adhesion with the substrate. preferable.
  • insulating particles can be used as the inorganic powder 1.
  • a powder for example, alumina powder made of the same material as the substrate 11 can be used.
  • the inorganic powder 1 is preferably contained in an amount of 10 to 45 parts by mass, and more preferably 15 to 45 parts by mass with respect to 100 parts by mass of the conductive powder.
  • the content of the inorganic powder 1 is less than 10 parts by mass, the joint prevention effect may be insufficient.
  • the content of the inorganic powder 1 is more than 45 parts by mass, the powder may be easily transferred to another adjacent member, or the resistivity of the obtained conductor may be increased.
  • the conductor-forming composition of the present embodiment includes a conductive powder, a glass frit, and an organic vehicle. These components are not particularly limited, and known powder materials used for the conductor-forming composition can be used. Hereinafter, an example of each component constituting the conductor-forming composition will be described.
  • the conductive powder is not particularly limited, and a known conductive powder used for the conductor-forming composition can be used.
  • the conductive powder can include, for example, at least one of Au, Ag, Pd, and Pt. Further, the conductive powder can be contained in an amount of 30% by mass or more and 60% by mass or less based on the entire conductor-forming composition.
  • the glass frit is not particularly limited, and a known glass frit used for the conductor-forming composition can be used.
  • a glass frit for example, a glass frit having an average particle size of 0.5 ⁇ m or more and 5 ⁇ m or less and a softening point of 500 ° C. or more and 700 ° C. or less can be used.
  • the glass frit is preferably a lead-free glass frit, and specifically, a glass frit substantially free of alkali metal such as borosilicate glass (SiO 2 —B 2 O 3 series) can be used.
  • Glass frit is made of CaO, BaO, ZnO, TiO 2 , V 2 O 5 or the like for the purpose of improving the wettability between glass and substrate, the adhesion between the substrate and conductor, and further improving the oxidation resistance of the conductor. It may be included as a component. Further, the glass frit can be contained in the range of 0.1% by mass or more and 5% by mass or less with respect to the entire conductor-forming composition.
  • the organic vehicle is obtained by dissolving a binder resin in a solvent.
  • the binder resin is not particularly limited, and a resin similar to the conventional one can be used.
  • ethyl cellulose, methacrylate or the like can be used.
  • the binder resin is preferably contained in the range of 1% by mass to 10% by mass with respect to the conductor-forming composition. When the content of the binder resin is less than 1% by mass, the handling property of the conductor-forming composition is poor, and the viscosity characteristic as a paste necessary for forming a conductor may not be obtained.
  • the binder resin when the content of the binder resin exceeds 10% by mass, the binder resin easily overflows on the surface of the obtained dry film, and the overflowing binder resin covers the inorganic powder 1 and adheres to other adjacent members.
  • the obtained conductor and other members may be joined.
  • the solvent is not particularly limited, and a known solvent can be used.
  • a known solvent can be used.
  • an organic solvent such as terpineol or butyl carbitol can be used.
  • the conductor-forming composition of this embodiment may further contain a solvent for adjusting the viscosity when the paste is produced.
  • the solvent for adjusting the viscosity is not particularly limited, and a known solvent can be used.
  • an organic solvent such as terpineol or butyl carbitol can be used.
  • the solvent for adjusting the viscosity may be the same as or different from the solvent contained in the organic vehicle.
  • content of the solvent in the whole conductor formation composition can be adjusted suitably, for example, can be 20 mass% or more and 60 mass% or less with respect to the whole conductor formation composition.
  • the manufacturing method of the composition for forming a conductor according to this embodiment is not particularly limited, and a conventionally known manufacturing method can be used.
  • the conductive powder, the inorganic powder 1, the glass frit, and the organic vehicle are used.
  • FIG. 3 is a flowchart showing an example of a method for producing a conductor of the present embodiment produced using the above-described conductor-forming composition. Hereinafter, with reference to FIG. 3, the manufacturing method of the conductor of this embodiment is demonstrated.
  • the conductor forming composition is applied to at least one surface of the substrate (step S1).
  • coating can use screen printing etc., for example.
  • a slit substrate having a slit can be used as the substrate.
  • the slit substrate is divided along the slits to form respective chip components.
  • the substrate portion 20 shown in FIGS. 1 and 2 is a substrate portion corresponding to one chip in a chip component (for example, a chip resistor).
  • the substrate coated with the conductor-forming composition is dried to form a dry film on the substrate (step S2).
  • the drying conditions are not particularly limited as long as at least a part of the solvent contained in the conductor-forming composition can be removed. Drying temperature is 80 degreeC or more and 150 degrees C or less, for example. Drying time is 1 minute or more and 15 minutes or less, for example.
  • the conductor forming composition When applying the conductor forming composition to both surfaces (front and back surfaces) of the substrate, after applying and drying on one surface of the substrate by screen printing or the like, the conductor formation is similarly applied to the other surface of the substrate. Apply composition for drying. Through this step, for example, as shown in FIG. 2A, a pair of dry films 11 having a predetermined interval on both the back surface and the front surface of the substrate portion 20 can be obtained.
  • the substrate on which the dry film is formed is baked (step S3).
  • the conductive powder contained in the conductor-forming composition is sintered to form the conductor portion 2 as shown in FIG.
  • the inorganic powder 1 is present on the surface more than the inside opposite to the surface in contact with the substrate.
  • the firing conditions are not particularly limited, and the conditions under which the conductive powder is sintered can be used, but it is preferably performed in an air atmosphere.
  • the firing temperature is, for example, 600 ° C. or higher and 900 ° C. or lower. When firing using a belt furnace, in consideration of the conveyance speed, it is set to be held at a peak temperature set at 600 ° C. or higher and 900 ° C. or lower for a predetermined time, for example, 1 minute or longer and 15 minutes or shorter.
  • the conductor-forming composition contains a metal powder as the inorganic powder 1, the metal powder can react with oxygen in the air during firing to form a metal oxide powder or a metal powder having an oxide film.
  • the inorganic powder 1 is a copper powder, the copper powder reacts with oxygen in the atmosphere during firing to form a copper oxide powder or a copper powder having an oxide film. It is preferable to use copper powder as the inorganic powder 1 because it is excellent in adhesion to the substrate.
  • a copper oxide powder or a copper powder having an oxide film may be used directly.
  • FIG. 4 is a schematic diagram showing an example of the resistor of the present embodiment.
  • the resistor 100 includes at least the substrate 20, the conductor 10, and the resistor 30.
  • the resistor 100 includes a protective layer 40 such as a glass layer or a resin layer on the resistor 30.
  • the conductor 10 which comprises the resistor 100 contains the surface electrode 10a and the back surface electrode 10b, as shown in FIG.
  • the front electrode 10a and / or the back electrode 10b are formed using the conductor forming composition.
  • the conductor 10 includes an end face electrode 10c.
  • the conductor 10 obtained using the conductor-forming composition has a low resistance value and excellent conductivity, so that it can be suitably used for fine-lined electronic components.
  • Example 1 Preparation of conductor forming composition (conductive paste)]
  • an organic vehicle containing 15% by mass of ethyl cellulose as the binder resin in the organic vehicle and 85% by mass of terpineol as the solvent in the organic vehicle was prepared.
  • the conductive powder Ag powder is 50% by mass with respect to the entire conductive paste
  • Cu powder having an SEM average particle size of 1.0 ⁇ m is 20 parts by mass with respect to 100 parts by mass of the conductive powder
  • glass frit is the conductive paste.
  • a 3 roll mill (Bueller Co., Ltd., SDY-) was added in an amount such that 3.0% by mass of the organic vehicle and 3.0% by mass of ethyl cellulose with respect to the entire conductive paste. 300), and finally a solvent for viscosity adjustment was added to prepare a paste-like conductor-forming composition (conductive paste).
  • the obtained conductive paste was printed on a 96% alumina substrate in a predetermined pattern (width 20 mm ⁇ length 20 mm) using a screen printer, and dried at 150 ° C. for 5 minutes using a belt-type drying furnace. A dry film (film thickness 15 ⁇ m) was formed. Next, the dried film was placed in contact with the belt of the belt furnace and fired at a peak temperature of 850 ° C. for 9 minutes for a total of 50 minutes to form a conductor.
  • the thickness of the obtained conductor was measured using a stylus type surface roughness meter (manufactured by Tokyo Seimitsu Co., Ltd., SURFCOM 480A). Next, using a digital multimeter (manufactured by ADVANTEST, R6871E), the resistance value of the conductor pattern having a width of 0.5 mm and a length of 50 mm was measured, and the film thickness measured previously was set to 5 ⁇ m. The resistance value when converted was calculated. The measurement results are shown in Table 1.
  • Example 2 A conductive paste was produced under the same conditions as in Example 1 except that the SEM average particle size of the Cu powder was changed to 4.0 ⁇ m. The measurement results are shown in Table 1.
  • Example 3 A paste was prepared in the same manner as in Example 1 except that the Cu powder content was changed to 40 parts by mass with respect to 100 parts by mass of the conductive powder. The measurement results are shown in Table 1.
  • Example 4 A conductive paste was produced under the same conditions as in Example 1 except that the Cu powder (inorganic powder) was changed to CuO powder. The measurement results are shown in Table 1.
  • Example 5 A conductive paste was produced under the same conditions as in Example 1 except that the Cu powder (inorganic powder) was changed to alumina powder. The measurement results are shown in Table 1.
  • Example 1 A paste was prepared in the same manner as in Example 1 except that the SEM average particle size of the Cu powder was changed to 0.1 ⁇ m. The measurement results are shown in Table 1.
  • Example 2 A paste was prepared in the same manner as in Example 1 except that the SEM average particle size of the Cu powder was changed to 10.0 ⁇ m. The measurement results are shown in Table 1.
  • Example 3 A paste was prepared in the same manner as in Example 1 except that the content of the Cu powder was changed to 2.0 parts by mass with respect to 100 parts by mass of the conductive powder. The measurement results are shown in Table 1.
  • Example 4 A paste was prepared in the same manner as in Example 1 except that the Cu powder content was changed to 50 parts by mass with respect to 100 parts by mass of the conductive powder.
  • the conductor obtained in the example had a film thickness of about 7 ⁇ m to 9 ⁇ m, and a resistance value in terms of 5 ⁇ m was 20 m ⁇ or more and 40 m ⁇ or less. The resistance value in terms of 5 ⁇ m could be 25 m ⁇ or less depending on the conditions. Further, when the surfaces of these conductors were visually and SEM-observed, the joining with the belt and the transfer to the belt were not confirmed. In FIG. 5, the photograph which observed the part of the belt which mounted the conductor formed using the composition of Example 1 by SEM is shown. The portion of the belt on which the conductor was placed was confirmed, but the constituent components of the conductor and the adhesion of Cu powder were not confirmed.
  • the conductor formed using the composition of Comparative Example 1 uses an inorganic powder having an SEM average particle size of 0.1 ⁇ m, and it was visually confirmed that the surface of the portion placed on the belt was deformed. .
  • FIG. 6 the photograph which observed the part of the belt which mounted the conductor part formed using the composition of the comparative example 1 by SEM is shown. As shown in FIG. 6, it was confirmed that the conductor formed using the composition of Comparative Example 1 was peeled off from the surface of the conductor (film), joined to the belt, and transferred.
  • the conductor formed using the composition of Comparative Example 2 uses an inorganic powder having an SEM average particle diameter of 10 ⁇ m, and the resistance value in terms of 5 ⁇ m was as high as 51.2 m ⁇ . In addition, no trace of bonding with the belt was confirmed on the surface of the conductor, and no adhesion of the constituent components of the conductor and Cu powder was confirmed on the belt in contact with the conductor.
  • the conductor formed using the composition of Comparative Example 3 had an inorganic powder content of less than 10 parts by mass, and it was visually confirmed that the surface of the part placed on the belt was deformed. As a result of SEM observation, it was confirmed that the surface of the conductor was peeled off, joined to the belt, and transferred.
  • the conductor formed using the composition of Comparative Example 4 had an inorganic powder content of more than 45 parts by mass and a high resistance value of 65.7 m ⁇ in terms of 5 ⁇ m.
  • the conductor was visually and SEM-observed, bonding with the belt was not confirmed.
  • bonding with the belt was not confirmed.
  • a portion in contact with the conductive film of the belt was confirmed, it was confirmed that a part of the Cu powder was transferred.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dispersion Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Electromagnetism (AREA)
  • Conductive Materials (AREA)
  • Ceramic Capacitors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)

Abstract

Provided are: a composition for forming a conductor, the composition requiring, during a baking step that uses a belt furnace, no jig to prevent cementing from taking place between a dried film and a belt, etc., and which enables forming of a conductor pattern with fine lines; and a production method therefor. Disclosed is a composition for forming a conductor, the composition comprising a conductive powder, an inorganic powder substance other than said conductive powder, glass frits, and an organic vehicle, wherein the inorganic powder substance has an average particle diameter of 0.3-5.0 μm as determined by SEM measurement and a sintering initiation temperature higher than that of the conductive powder, and is included in an amount of 10-45 parts by mass with respect to 100 parts by mass of the conductive powder.

Description

導体形成用組成物、導体とその製造方法、及び、チップ抵抗器Conductor forming composition, conductor and method for producing the same, and chip resistor
 本発明は、導体形成用組成物、導体とその製造方法、及び、チップ抵抗器に関する。 The present invention relates to a conductor-forming composition, a conductor and a method for producing the same, and a chip resistor.
 電子部品などの電極や回路を形成するための導体は、例えば、導電率の高い導電性粉末を、ガラスフリットなどと共に、有機ビヒクル中に分散させて形成される導体形成用組成物を用いて形成される。導体は、例えば、導体形成用組成物をアルミナ基板等のセラミック基板上に、スクリーン印刷法等により所要の形状に塗布して、120℃~150℃で乾燥させた後、600℃~900℃で焼成することにより形成される。 Conductors for forming electrodes and circuits such as electronic parts are formed by using a conductor-forming composition formed by dispersing conductive powder having high conductivity in an organic vehicle together with glass frit, for example. Is done. For example, the conductor is formed by applying the conductor-forming composition onto a ceramic substrate such as an alumina substrate in a required shape by a screen printing method or the like, drying at 120 ° C. to 150 ° C., and then at 600 ° C. to 900 ° C. It is formed by firing.
 従来、積層セラミックコンデンサ(以下、「MLCC」ともいう。)などのチップ部品の外表面に導体を形成する場合、チップ部品の外表面に導体形成用組成物を塗布して、乾燥させて乾燥膜を得た後、チップ部品と共に焼成する過程では、隣接するチップ部品同士が接合したり、チップ部品を乗せるセラミック等の棚板と接合したりする問題があった。これらの接合を防ぐために、導体形成用組成物を塗布した後工程で、アルミナ等の粉を塗すなどの方法がなされてきたが、焼成後にそのアルミナ等の粉を除去する工程が必要であり、手間がかかっていた。そこで、積層セラミックコンデンサの外部電極と他の部材との接合を防止するため、いくつかの提案がなされている。 Conventionally, when a conductor is formed on the outer surface of a chip component such as a multilayer ceramic capacitor (hereinafter also referred to as “MLCC”), the conductor-forming composition is applied to the outer surface of the chip component, dried, and dried. In the process of firing together with the chip parts, there is a problem that adjacent chip parts are joined together or are joined to a shelf board such as a ceramic on which the chip parts are placed. In order to prevent these joining, methods such as applying powder such as alumina have been made in the subsequent process of applying the conductor forming composition, but a process of removing the powder such as alumina after firing is necessary. , It took time and effort. In view of this, several proposals have been made in order to prevent bonding between the external electrode of the multilayer ceramic capacitor and another member.
 例えば、特許文献1では、導電性ペーストに、多種類の粒形を有する金属粉末、例えば、大小2種類の球形状粉末と鱗片状の金属粉末など、を用いることが記載されている。また、特許文献2では、金属粉末とガラスフリットを含む導電ペーストであって、金属粉末より高融点の金属添加物を1~10wt%含んでいる導電性ペーストが記載されている。これらの導電性ペーストは、焼成の際に金属粉末の焼結が抑制され、金属成分が密に収縮せず、金属成分間に隙間を形成することにより、接合の原因となるガラス成分が導体層の表面に染み出すことを防げることが記載されている。 For example, Patent Document 1 describes that metal powder having various types of particles, for example, two kinds of large and small spherical powders and scale-like metal powders, etc. are used for the conductive paste. Patent Document 2 describes a conductive paste containing a metal powder and glass frit and containing 1 to 10 wt% of a metal additive having a melting point higher than that of the metal powder. These conductive pastes suppress the sintering of the metal powder during firing, the metal component does not shrink closely, and a gap is formed between the metal components, so that the glass component that causes bonding is a conductor layer. It is described that it can be prevented from oozing out on the surface of the glass.
 また、特許文献3では、平均粒径が0.1mm以下の無機物粉末を用いることが記載されている。無機物粉末は導体層の表面に露出することにより、MLCCの焼成工程でMLCCチップ同士、またはMLCCチップを設置するセラミック匣鉢との焼付を防止する方法が記載されている。また、特許文献4では、ガラスの流動性をコントロールし導体層の表面に染み出すことを防止するために、ガラス粉末の組成を限定した導電性ペーストが記載されている。 In Patent Document 3, it is described that an inorganic powder having an average particle size of 0.1 mm or less is used. A method is described in which the inorganic powder is exposed to the surface of the conductor layer, thereby preventing seizure between MLCC chips or a ceramic mortar in which the MLCC chip is installed in the MLCC firing step. Patent Document 4 describes a conductive paste in which the composition of the glass powder is limited in order to control the fluidity of the glass and prevent it from seeping out onto the surface of the conductor layer.
 上記のような問題は、チップ抵抗器を製造する際にも生じている。チップ抵抗器は、基板の表面及び裏面に設けられた一対の導体(表面電極及び裏面電極)と、一対の表面電極の間に設けられた抵抗体と、抵抗体を覆う絶縁性の保護層と、基板の端面に設けられ、表面電極と裏面電極を導通する一対の端面電極と、を備える。なお、チップ抵抗器に形成される裏面電極は、チップ抵抗器を回路基板に実装した際に、チップ抵抗器と、回路基板とを電気的に接合させるためのものである。 The above problems also occur when manufacturing chip resistors. The chip resistor includes a pair of conductors (surface electrode and back electrode) provided on the front and back surfaces of the substrate, a resistor provided between the pair of surface electrodes, and an insulating protective layer covering the resistor. And a pair of end surface electrodes provided on the end surface of the substrate and conducting the front surface electrode and the back surface electrode. The back electrode formed on the chip resistor is for electrically bonding the chip resistor and the circuit board when the chip resistor is mounted on the circuit board.
 チップ抵抗器は、例えば、以下の方法により製造される。まず、予めチップサイズに応じた所望の寸法にスリットを入れた基板(スリット基板)を準備し、この基板上に、スリットを跨ぐように、導体形成用組成物を印刷して、乾燥した後、焼成することにより、基板の表面と裏面とに、それぞれ複数対の導体(表面電極及び裏面電極)を形成する。次に、基板の表面に抵抗体を、各対の表面電極がその両端に配置されるように形成した後、抵抗体上にプリコートと呼ばれるガラス層を形成し、さらにその上に保護層として、例えば、樹脂層を形成する。次に、基板をスリットに沿って短冊状に分割し、端面電極を形成し、めっきした後、さらに、短冊状の基板を分割して、チップ状の抵抗器を得る。 The chip resistor is manufactured by the following method, for example. First, prepare a substrate (slit substrate) with slits in a desired dimension according to the chip size in advance, and print and dry the conductor-forming composition so as to straddle the slit on this substrate, By firing, a plurality of pairs of conductors (surface electrode and back electrode) are formed on the front surface and the back surface of the substrate, respectively. Next, after forming a resistor on the surface of the substrate so that each pair of surface electrodes is disposed at both ends thereof, a glass layer called a precoat is formed on the resistor, and a protective layer is further formed thereon. For example, a resin layer is formed. Next, the substrate is divided into strips along the slits, end electrodes are formed and plated, and then the strip-like substrate is further divided to obtain chip resistors.
 導体(表面電極及び裏面電極)は、例えば、有機ビヒクル中に導電率の高い導電性粉末とガラスフリットなどを分散させた導体形成用組成物を、基板上にスクリーン印刷法等により所要の形状に塗布し、120℃~150℃程度で乾燥させた後、600℃~900℃程度で焼成して形成される。また、基板両面へ導体(表面電極及び裏面電極)を形成させる場合、従来は、基板の一方の面に導体形成用組成物を印刷した後、乾燥、焼成を行って導体(例えば、裏面電極)を形成し、その後、基板の他方の面にも、同様に印刷、乾燥及び焼成を行って、導体(例えば、表面電極)を形成する。 Conductors (front electrode and back electrode) are formed into a required shape by, for example, screen-printing or the like on a substrate with a conductive composition in which an electrically conductive powder having high electrical conductivity and glass frit are dispersed in an organic vehicle. It is formed by coating and drying at about 120 ° C. to 150 ° C. and then baking at about 600 ° C. to 900 ° C. Also, in the case where conductors (surface electrode and back electrode) are formed on both sides of a substrate, conventionally, a conductor forming composition is printed on one surface of the substrate, and then dried and baked to conduct the conductor (eg, back electrode). After that, printing, drying and baking are similarly performed on the other surface of the substrate to form a conductor (for example, a surface electrode).
 近年、コスト削減や省エネルギー化を要請から、乾燥から焼成までの工程を簡略化することが行われている。例えば、チップ抵抗器においては、導体(表面電極及び裏面電極)の形成過程において、基板の一方の面に導体形成用組成物を印刷し、乾燥させて乾燥膜(例えば、裏面乾燥膜)を形成した後、焼成する前に、基板の他方の面に導体形成用組成物を印刷し、乾燥させて乾燥膜(例えば、表面乾燥膜)を形成する。そして、基板両面の乾燥膜を同時に焼成することにより、焼成工程を一回省くことができる。しかしこの様な製法では、例えば、乾燥膜の焼成をベルト炉で行う場合、必ずベルトと対向する面にも乾燥膜が存在することとなり、ベルトと対向する面に形成された乾燥膜が焼成時にベルト炉のベルト部分に触れてしまい、ベルトと導体とが接合し、導体のパターンに抜けができたり、ベルトに導体が付着して、ベルト炉が使用不能となったりすることがあった。このようなベルトと導体との接合を防止するため、基板の両面に形成された乾燥膜を焼成する際には、乾燥膜が他の部材に触れないようにする冶具を必要とする。 In recent years, from the request for cost reduction and energy saving, the process from drying to baking has been simplified. For example, in the case of a chip resistor, in the process of forming conductors (front and back electrodes), the conductor-forming composition is printed on one side of the substrate and dried to form a dry film (for example, a back dry film). Then, before firing, the conductor-forming composition is printed on the other surface of the substrate and dried to form a dry film (for example, a surface dry film). And a baking process can be skipped once by baking the dry film of both surfaces of a board | substrate simultaneously. However, in such a production method, for example, when the dried film is baked in a belt furnace, the dried film is always present on the surface facing the belt, and the dried film formed on the surface facing the belt is The belt portion of the belt furnace may be touched, the belt and the conductor may be joined, the conductor pattern may come off, or the conductor may adhere to the belt, making the belt furnace unusable. In order to prevent such bonding between the belt and the conductor, when firing the dry film formed on both surfaces of the substrate, a jig is required to prevent the dry film from touching other members.
 その一方で、近年、電子部品の小型・大容量化等の要請から、電極パターンの微細化・高密度化が進行しており、より微細な線幅を有する電極パターンを形成可能な導体形成用組成物が求められている。 On the other hand, in recent years, miniaturization and high density of electrode patterns have been progressing due to demands for downsizing and large capacity of electronic components, and for conductor formation capable of forming electrode patterns with finer line widths. There is a need for a composition.
特開平8-306580号公報JP-A-8-306580 特開平10-12481号公報Japanese Patent Laid-Open No. 10-12481 特開平9-129480号公報JP-A-9-129480 特開2001-297628号公報JP 2001-297628 A
 ところで、上記特許文献1~4に記載される技術では、抵抗体の導体(表面電極及び裏面電極)を形成する際には、以下のような問題があった。すなわち、特許文献1及び特許文献2に記載の導電性ペーストでは、導体を形成する際に金属成分間に隙間を形成するため、導電性粉末の焼結が不十分となり、導体の電気抵抗率が高くなりやすく、低抵抗な導体が求められる抵抗器等の電子部品の電極に適応することができない。また、これらの導電性ペーストでは、導体が脆くなりやすく、導体を介した部品間の接合強度が不十分となりやすく、また、導体の表面が疎になりやすいため、導体の上に電解めっきをする場合には酸性のめっき液が内部に侵入しやすく、めっき液にガラス成分が溶け出し強度の低下などを起こしやすいという問題があった。 Incidentally, the techniques described in Patent Documents 1 to 4 have the following problems when forming the conductors of the resistor (front electrode and back electrode). That is, in the conductive paste described in Patent Document 1 and Patent Document 2, a gap is formed between the metal components when the conductor is formed, so that the conductive powder is not sufficiently sintered, and the electrical resistivity of the conductor is low. It cannot easily be applied to electrodes of electronic parts such as resistors that are likely to be high and require a low-resistance conductor. Also, with these conductive pastes, the conductor is likely to become brittle, the bonding strength between components via the conductor is likely to be insufficient, and the surface of the conductor is likely to be sparse, so electrolytic plating is performed on the conductor. In such a case, there is a problem that the acidic plating solution easily enters the inside, and the glass component dissolves into the plating solution and the strength is easily lowered.
 また、特許文献3の導電性ペーストでは、実施例において、平均粒径が0.05mm~0.2mmの無機粒子を用いており、このような大きな粒子を含む導電性ペーストを、チップ抵抗器を製造するためのスリット基板上に印刷した場合、無機粒子がスリット間に染み出だしたり、スリット基板を分割する際に、無機粒子が抜け落ち、電極に孔があいたり、抜け落ちた無機粒子がコンタミしたりして、製造工程に不具合が生じることがある。また、通常、導電性を有さない無機物粉末を表面に露出するように電子部品を製造すると回路基板上に実装する際に接続不良を起こす原因となり、不良率が増加する原因となるため好ましくないと考えられる。 Further, in the conductive paste of Patent Document 3, inorganic particles having an average particle diameter of 0.05 mm to 0.2 mm are used in the examples. A conductive paste containing such large particles is used as a chip resistor. When printed on the slit substrate for manufacturing, the inorganic particles ooze out between the slits, or when the slit substrate is divided, the inorganic particles fall off, the electrodes are perforated, and the dropped inorganic particles are contaminated. As a result, defects may occur in the manufacturing process. Also, manufacturing an electronic component so that inorganic powder that does not have conductivity is usually exposed on the surface causes unsatisfactory connection when mounted on a circuit board, resulting in an increase in the defect rate. it is conceivable that.
 さらに、特許文献4に記載の導電性ペーストでは、ガラス粉末にアルカリ金属酸化物が含まれており、例えば、チップ抵抗器において導体と抵抗体等の他の部材とを組み合わる場合、アルカリ成分が他の部材に入りやすく、部材の特性に影響することがある。また、この導電性ペーストに用いられるガラス粉末の組成は、セラミック素体に対して濡れ難いと記載されるように、導体層をセラミックに形成する場合、母材に対する密着強度が得にくい。 Furthermore, in the conductive paste described in Patent Document 4, an alkali metal oxide is contained in the glass powder. For example, when combining a conductor and another member such as a resistor in a chip resistor, the alkali component is It may easily enter other members and may affect the characteristics of the members. Further, as described in the composition of the glass powder used in the conductive paste, it is difficult to obtain adhesion strength to the base material when the conductor layer is formed on the ceramic as described in that it is difficult to wet the ceramic body.
 一方、従来の導体形成用組成物を用いて、上記のように抵抗器の導体(表面電極及び裏面電極)を形成するための焼成をベルト炉で行う場合、乾燥膜とベルト等の他の部材とを冶具を用いて触れないようにする工程が必要となり、工程簡略化の障害となっていた。 On the other hand, when firing for forming the conductors of the resistor (front electrode and back electrode) using a conventional conductor forming composition in a belt furnace, other members such as a dry film and a belt are used. Therefore, it is necessary to provide a process for preventing the contact with a jig, which is an obstacle to simplification of the process.
 本発明は上記の事情に鑑み、例えば、ベルト炉を用いた焼成工程において、特に冶具を用いずとも乾燥膜とベルト等の他の部材との接合が生じず、かつ、導体パターンのファインライン化を可能とする導体形成用組成物及びその製造方法を提供することを目的とする。 In view of the above circumstances, for example, in the firing process using a belt furnace, the present invention does not cause the joining of the dry film and other members such as a belt without using a jig, and the conductor pattern is made into a fine line. An object of the present invention is to provide a conductor-forming composition and a method for producing the same.
 本発明の第1の態様では、導電性粉末と、前記導電性粉末以外の無機物粉末と、ガラスフリットと、有機ビヒクルと、を含む導体形成用組成物であって、無機物粉末は、SEM測定に基づく平均粒径が0.3μm以上5.0μm以下であり、前記導電性粉末よりも高い焼結開始温度を有し、前記導電性粉末100質量部に対して10質量部以上45質量部以下含まれる、導体形成用組成物が提供される。 According to a first aspect of the present invention, there is provided a conductor-forming composition comprising a conductive powder, an inorganic powder other than the conductive powder, a glass frit, and an organic vehicle, wherein the inorganic powder is used for SEM measurement. The average particle size is 0.3 μm or more and 5.0 μm or less, has a sintering start temperature higher than that of the conductive powder, and includes 10 parts by mass or more and 45 parts by mass or less with respect to 100 parts by mass of the conductive powder. A conductor-forming composition is provided.
 また、無機物粉末は、金属粉末、金属酸化物粉末、及び、酸化被膜を有する金属粉末のうち少なくとも一つを含むことが好ましい。また、無機物粉末は、銅粉末、酸化銅粉末、及び、酸化被膜を有する銅粉末のうち少なくとも一つを含むことが好ましい。また、有機ビヒクルは、バインダ樹脂と、溶剤とを含み、バインダ樹脂は、導体形成用組成物に対して1質量%以上10質量%以下含まれることが好ましい。また、導電性粉末は、Au、Ag、PdおよびPtのうち少なくとも1種類を含むことが好ましい。また、ベルト炉を用いて前記導体形成用組成物をベルト上に載置して焼成した場合に、前記無機物粉末が前記導体の内部よりも表面に多く存在することにより、前記導電性粉末のベルト部材への焼付きを防止することができることが好ましい。また、チップ抵抗器の表面電極及び裏面電極の少なくとも一方の形成用に用いられることが好ましい。 The inorganic powder preferably contains at least one of a metal powder, a metal oxide powder, and a metal powder having an oxide film. The inorganic powder preferably contains at least one of copper powder, copper oxide powder, and copper powder having an oxide film. Moreover, it is preferable that an organic vehicle contains binder resin and a solvent, and binder resin is contained 1 mass% or more and 10 mass% or less with respect to the composition for conductor formation. The conductive powder preferably contains at least one of Au, Ag, Pd and Pt. Further, when the conductor-forming composition is placed on a belt using a belt furnace and fired, the inorganic powder is present on the surface more than the inside of the conductor, whereby the conductive powder belt. It is preferable that seizure to the member can be prevented. Further, it is preferably used for forming at least one of a front electrode and a back electrode of the chip resistor.
 本発明の第2の態様では、上記導体形成用組成物を基板の少なくとも一方の面に塗布することと、導体形成用組成物を塗布した基板を乾燥して、導体形成用組成物に含まれる溶剤の少なくとも一部を除去し、基板上に乾燥膜を形成することと、乾燥膜を形成した基板を焼成して、前記導体形成用組成物に含まれる導電性粉末を焼結させ、無機物粉末が内部よりも基板と接する面とは反対側の表面に多く存在する導体を形成することと、を備える、導体の製造方法が提供される。 In the second aspect of the present invention, the conductor-forming composition is applied to at least one surface of the substrate, and the substrate coated with the conductor-forming composition is dried to be contained in the conductor-forming composition. Removing at least a portion of the solvent, forming a dry film on the substrate, firing the substrate on which the dry film is formed, sintering the conductive powder contained in the conductor-forming composition, and inorganic powder Forming a conductor that is present more on the surface opposite to the surface in contact with the substrate than on the inside.
 また、導体の製造方法において、上記導体形成用組成物は、無機物粉末として金属粉末を含み、金属粉末は、焼成の際、大気中の酸素と反応して酸化金属粉末又は酸化被膜を有する金属粉末を形成することができる。また、金属粉末は、銅粉末であることが好ましい。 In the method for producing a conductor, the conductor-forming composition contains a metal powder as an inorganic powder, and the metal powder reacts with oxygen in the atmosphere during firing to have a metal oxide powder or an oxide film. Can be formed. The metal powder is preferably copper powder.
 本発明の第3の態様では、上記導体形成用組成物を用いて基板上に形成される導体であって、無機物粉末は、導体内において、基板に接する面と反対側の面に偏って配置される、導体が提供される。 In the third aspect of the present invention, the conductor is formed on the substrate using the above-mentioned conductor-forming composition, and the inorganic powder is disposed in the conductor so as to be biased toward the surface opposite to the surface in contact with the substrate. A conductor is provided.
 本発明の第4の態様では、上記導体形成用組成物を用いて形成された導体を有する電子部品が提供される。 In the fourth aspect of the present invention, there is provided an electronic component having a conductor formed using the above-described conductor-forming composition.
 本発明の第5の態様では、基板、導体、及び、抵抗体を少なくとも備え、導体は、上記導体形成用組成物を用いて形成された、チップ抵抗器が提供される。 In a fifth aspect of the present invention, there is provided a chip resistor that includes at least a substrate, a conductor, and a resistor, and the conductor is formed using the above-described conductor-forming composition.
 本発明の導体形成用組成物は、導体の製造工程において得られる乾燥膜が、焼成過程で、例えば、ベルト炉のベルト等の他の部材と接合してしまう現象を抑制することができる。また、本発明の導体形成用組成物を用いて得られる導体パターンは、ファインライン化が可能である。また、本発明の導体の製造方法は、ファインライン化した導体パターンを簡便に効率よく作製することができる。また、上記導体形成用組成物を用いて得られた導体は、ベルト炉のベルト上に載置して焼成して得られた場合でも、ベルトへの導体成分の接合が抑制され、かつ、低い抵抗値を有することができる。 The conductor-forming composition of the present invention can suppress the phenomenon that the dried film obtained in the conductor production process is bonded to other members such as a belt of a belt furnace in the firing process. Moreover, the conductor pattern obtained using the conductor forming composition of the present invention can be made into a fine line. In addition, the conductor manufacturing method of the present invention can easily and efficiently produce a fine line conductor pattern. In addition, even when the conductor obtained using the conductor-forming composition is obtained by placing on a belt of a belt furnace and firing, the bonding of the conductor component to the belt is suppressed and low. It can have a resistance value.
図1(A)は、基板部上に形成された導体の一例を模式的に示す断面図であり、図1(B)は、導体の一部を拡大した断面図である。FIG. 1A is a cross-sectional view schematically showing an example of a conductor formed on a substrate portion, and FIG. 1B is an enlarged cross-sectional view of a part of the conductor. 図2(A)は、導体を形成した基板部をベルト炉のベルト上に載置した状態の一例を模式的に示す断面図であり、図2(B)は、導体の一部を拡大した断面図であり、図2(C)は、乾燥膜(又は導体)を模式的に示す図である。FIG. 2A is a cross-sectional view schematically showing an example of a state in which the substrate portion on which the conductor is formed is placed on the belt of the belt furnace, and FIG. 2B is an enlarged view of a part of the conductor. FIG. 2C is a sectional view schematically showing a dry film (or conductor). 図3は、導体の製造方法の一例を示すフローチャートである。FIG. 3 is a flowchart showing an example of a conductor manufacturing method. 図4は、チップ抵抗器の一例を示す模式図である。FIG. 4 is a schematic diagram illustrating an example of a chip resistor. 図5は、実施例1の導体のベルトとの接触部分を示すSEM写真である。FIG. 5 is a SEM photograph showing a contact portion of the conductor of Example 1 with the belt. 図6は、比較例1の導体のベルトとの接触部分を示すSEM写真である。FIG. 6 is an SEM photograph showing a contact portion of the conductor of Comparative Example 1 with the belt.
 以下、本発明の各実施形態の一例について、図1~4を参照して、詳細に説明する。なお、図面においては、各構成をわかりやすくするために、一部を強調して、あるいは一部を簡略化して表しており、実際の構造または形状、縮尺等が異なっている場合がある。 Hereinafter, an example of each embodiment of the present invention will be described in detail with reference to FIGS. In the drawings, in order to make each configuration easy to understand, some parts are emphasized or some parts are simplified, and actual structures, shapes, scales, and the like may be different.
 本実施形態の導体形成用組成物は、導電性粉末と、前記導電性粉末以外の無機物粉末と、ガラスフリットと、有機ビヒクルと、を含む。導体形成用組成物は、無機物粉末を含むことにより、得られる導体の他の部材への接合を抑制することができる。以下、図1~図2を参照して、本実施形態の導体形成用組成物を用いて得られる乾燥膜及び形成された導体について説明する。 The conductor-forming composition of the present embodiment includes a conductive powder, an inorganic powder other than the conductive powder, a glass frit, and an organic vehicle. By including the inorganic powder, the conductor-forming composition can suppress bonding of the obtained conductor to other members. Hereinafter, with reference to FIGS. 1 and 2, a dry film obtained using the conductor-forming composition of the present embodiment and the formed conductor will be described.
 図1(A)は、基板部上に形成された本実施形態の導体の一例を示す模式図である。導体10は、基板部20の一方又は両方の表面上に層状に形成される。導体10は、導体形成用組成物を、基板部20に塗布して、乾燥した後、焼成して形成される。基板部20は、例えば、スリット基板のうち、1つのチップ部品を形成する基板部分(領域)である。基板部20は、特に限定されず、公知の基板を用いることができ、例えば、アルミナを主成分とするアルミナ基板を用いることができる。なお、導体10は、基板部20の一方の表面(表面又は裏面)上に形成されてもよく、両方の表面(表面及び裏面)上に形成されてもよい。 FIG. 1A is a schematic diagram showing an example of a conductor of the present embodiment formed on a substrate part. The conductor 10 is formed in layers on one or both surfaces of the substrate unit 20. The conductor 10 is formed by applying a conductor-forming composition to the substrate unit 20, drying it, and firing it. The board | substrate part 20 is a board | substrate part (area | region) which forms one chip component among slit substrates, for example. The substrate unit 20 is not particularly limited, and a known substrate can be used. For example, an alumina substrate containing alumina as a main component can be used. In addition, the conductor 10 may be formed on one surface (front surface or back surface) of the board | substrate part 20, and may be formed on both surfaces (front surface and back surface).
 図1(B)は、図1(A)の破線で囲んだ導体10部分を拡大して示す図である。図1(B)に示されるように、導体10は、無機物粉末1と、導電性粉末が焼結して形成された導体部2とを含む。導体部2は、導電性粉末に由来する金属、及び、ガラスフリットに由来するガラスを含む。なお、導体形成用組成物に含まれる有機ビヒクルに由来する成分は、乾燥、焼成の工程で、除去される。 FIG. 1 (B) is an enlarged view showing a portion of the conductor 10 surrounded by a broken line in FIG. 1 (A). As shown in FIG. 1B, the conductor 10 includes an inorganic powder 1 and a conductor portion 2 formed by sintering conductive powder. The conductor part 2 contains the metal derived from electroconductive powder, and the glass derived from a glass frit. In addition, the component originating in the organic vehicle contained in the composition for conductor formation is removed by the process of drying and baking.
 無機物粉末1は、導体10の表面、少なくとも、導体10と基板部20とが接する面とは反対側の表面にその内部よりも多く存在するように配置される。無機物粉末1が導体10の表面に偏るように、多く配置されるため、導体10に含まれる金属成分と、導体10と接する他の部材(例えば、ベルト炉のベルト部材)との接触面積を減らすことができ、他の部材と金属成分との接合を抑制することができる。導体10は、抵抗体の導体(表面電極及び裏面電極の少なくとも一方)として用いられる場合、導体10の厚さは、2μm以上10μm以下とすることができ、3μm以上8μm以下であることが好ましい。なお、導体の厚さは、触針式表面粗さ計により測定することができる。 The inorganic powder 1 is disposed on the surface of the conductor 10, at least on the surface opposite to the surface where the conductor 10 and the substrate portion 20 are in contact with each other, so as to be present more than the inside. Since many inorganic powders 1 are arranged so as to be biased toward the surface of the conductor 10, the contact area between the metal component contained in the conductor 10 and another member (for example, a belt member of a belt furnace) in contact with the conductor 10 is reduced. It is possible to suppress the bonding between the other member and the metal component. When the conductor 10 is used as a conductor of a resistor (at least one of a front electrode and a back electrode), the thickness of the conductor 10 can be 2 μm or more and 10 μm or less, and preferably 3 μm or more and 8 μm or less. The thickness of the conductor can be measured with a stylus type surface roughness meter.
 図2(A)~図2(C)は、乾燥膜又は導体を模式的に示した図である。乾燥膜11は、本実施形態の導体形成用組成物を基板部20上に塗布し、乾燥して得ることができる。得られた乾燥膜11は、図2(A)に示されるように、例えば、ベルト炉のベルト部材25上に載置される。ベルト部材25は、基板部20上に形成された乾燥膜11の少なくとも一部の表面と接触する。図2(B)は、乾燥膜11とベルト部材25との接触部分を拡大して示した模式図である。無機物粉末1は、図2(B)に示されるように、乾燥膜11中、ほぼ均一に分散する。 FIG. 2 (A) to FIG. 2 (C) are diagrams schematically showing a dry film or a conductor. The dry film 11 can be obtained by applying the conductor-forming composition of the present embodiment on the substrate portion 20 and drying it. The obtained dry film 11 is placed on, for example, a belt member 25 of a belt furnace as shown in FIG. The belt member 25 contacts at least a part of the surface of the dry film 11 formed on the substrate unit 20. FIG. 2B is an enlarged schematic view showing a contact portion between the dry film 11 and the belt member 25. As shown in FIG. 2B, the inorganic powder 1 is dispersed almost uniformly in the dry film 11.
 図2(C)は、乾燥膜11を焼成して、導体10を形成する工程における、乾燥膜11又は層状の導体10を示す模式図である。図2(C)に示されるように、焼成工程において、無機物粉末1は、乾燥膜11又は導体部2(導体10)の表面に向かって移動し、次第に、内部よりも表面に多く存在するようになる。この理由としては、特に限定されないが、無機物粉末1の焼結開始温度が、導電性粉末の焼結開始温度よりも高いため、焼成工程において、導電性粉末が焼結する際に、無機物粉末1が、乾燥膜11の外側(表面)に押し出されるように、移動することが考えられる。そして、焼成後に得られた導体10では、導体10の表面に、無機物粉末1が内部よりも多く存在するようになる。 FIG. 2C is a schematic diagram showing the dry film 11 or the layered conductor 10 in the step of firing the dry film 11 to form the conductor 10. As shown in FIG. 2 (C), in the firing step, the inorganic powder 1 moves toward the surface of the dry film 11 or the conductor portion 2 (conductor 10), and gradually appears to be present on the surface more than the inside. become. Although it does not specifically limit as this reason, since the sintering start temperature of the inorganic powder 1 is higher than the sintering start temperature of the conductive powder, the inorganic powder 1 is used when the conductive powder is sintered in the firing step. However, it is possible to move so that it may be extruded to the outer side (surface) of the dry film | membrane 11. In the conductor 10 obtained after firing, the inorganic powder 1 is present on the surface of the conductor 10 more than the inside.
 なお、無機物粉末1は、少なくとも基板部20と接する面とは反対側の表面に、導体10の内部よりも多く存在すればよく、例えば、基板部20と接する面にも存在してもよい。また、無機物粉末1は、例えば、基板部20と接する面で基板と反応して、合金化することにより、得られる導体においては、基板部20と接する面とは反対側の表面に偏って配置されてもよい。以下、無機物粉末1について、詳細に説明する。 In addition, the inorganic powder 1 should just exist more than the inside of the conductor 10 in the surface on the opposite side to the surface which contact | connects the board | substrate part 20, for example, may exist also in the surface which contact | connects the board | substrate part 20. FIG. In addition, the inorganic powder 1 is disposed on the surface opposite to the surface in contact with the substrate portion 20 in the conductor obtained by reacting with the substrate on the surface in contact with the substrate portion 20 and alloying, for example. May be. Hereinafter, the inorganic powder 1 will be described in detail.
[無機物粉末]
 導体形成用組成物において、無機物粉末1は、走査型電子顕微鏡(SEM)測定に基づく平均粒径(SEM平均粒径)が0.3μm以上5.0μm以下である。SEM平均粒径が、上記範囲である場合、得られる導体の抵抗値が低く、優れた導電性を有することができ、かつ、導体と他の部材への接合を抑制することができる。また、SEM平均粒径が上記範囲である場合、特に、ファインライン化された電子部品に好適に用いることができる。
[Inorganic powder]
In the conductor-forming composition, the inorganic powder 1 has an average particle size (SEM average particle size) based on scanning electron microscope (SEM) measurement of 0.3 μm or more and 5.0 μm or less. When the SEM average particle size is in the above range, the obtained conductor has a low resistance value, can have excellent conductivity, and can suppress the bonding of the conductor to other members. Moreover, when the SEM average particle diameter is in the above range, it can be suitably used particularly for fine-lined electronic components.
 一方、SEM平均粒径が0.3μm未満である場合、無機物粉末1が導体中に埋もれ、接合の防止効果が不十分となることがある。また、SEM平均粒径が5.0μm超である場合、得られる導体の抵抗率が高くなることがある。なお、無機物粉末1のSEM平均粒径は、走査型電子顕微鏡(SEM)を用いて、写真中に粒子形状の全容が見える粒子が300個以上確認できる倍率で撮影し、観察した各粒子の最長径と最短径の平均値より各粒子の直径を算出し、得られた無機物粉末の直径の平均値(算出した各粒子の直径の総和/測定した粒子の数、個数平均)により定めた。また、本明細書において他の部分でもSEM平均粒径は同じ意味を有している。SEMで観察する際の倍率は、上述の様に300個以上確認できれば任意に設定することができるが、本発明に用いる無機物粉末の場合、1,000倍~20,000倍の範囲で観察するのが好ましい。 On the other hand, when the SEM average particle size is less than 0.3 μm, the inorganic powder 1 may be buried in the conductor, and the joint prevention effect may be insufficient. Moreover, when the SEM average particle diameter is more than 5.0 μm, the resistivity of the obtained conductor may be increased. The SEM average particle size of the inorganic powder 1 was measured using a scanning electron microscope (SEM) at a magnification at which 300 or more particles that can be seen in the entire shape of the particle can be confirmed in the photograph. The diameter of each particle was calculated from the average value of the longest diameter and the shortest diameter, and was determined by the average value of the diameters of the obtained inorganic powders (total calculated diameter of each particle / number of particles measured, number average). In the present specification, the SEM average particle size has the same meaning in other portions. The magnification when observing with SEM can be arbitrarily set as long as 300 or more can be confirmed as described above, but in the case of the inorganic powder used in the present invention, the magnification is observed in the range of 1,000 to 20,000 times. Is preferred.
 無機物粉末1は、導体形成用組成物を、導電性粉末が焼結できる温度で焼成した際に、焼結しない粒子からなる粉末を用いることができる。すなわち、無機物粉末1は、導電性粉末より焼結開始温度が高く、例えば、大気雰囲気中、120℃以上900℃以下で焼成(熱処理)した場合に焼結しない粒子を用いることができる。このような粒子を用いた場合、上述したように、導体形成用組成物から形成された乾燥膜を焼成した際、無機物粉末1が、導体の表面へ偏って分布することができる。 The inorganic powder 1 may be a powder composed of particles that are not sintered when the conductor-forming composition is fired at a temperature at which the conductive powder can be sintered. That is, the inorganic powder 1 has a sintering start temperature higher than that of the conductive powder. For example, particles that are not sintered when fired (heat treated) at 120 ° C. or higher and 900 ° C. or lower in the air atmosphere can be used. When such particles are used, as described above, when the dried film formed from the conductor-forming composition is fired, the inorganic powder 1 can be distributed unevenly to the surface of the conductor.
 無機物粉末1は、上記の特性を有する粉末であれば、特に限定されず、導体形成用組成物に使用される公知の粉末材料を用いることができる。無機物粉末1は、例えば、セラミック粉末などを用いることができるが、好ましくは、金属粉末、金属酸化物粉末、及び、酸化被膜を有する金属粉末のうち少なくとも一つを用いることができ、より好ましくは、銅粉末、酸化銅粉末、及び、酸化被膜を有する銅粉末のうち少なくとも一つを用いることができる。無機物粉末1として、銅を含む粉末を用いた場合、該粉末の多くは基板に接する面と反対側に偏るが、基板側に残った該粉末が基板との密着性を向上させる効果も有するため好ましい。 The inorganic powder 1 is not particularly limited as long as it is a powder having the above characteristics, and a known powder material used for a conductor-forming composition can be used. As the inorganic powder 1, for example, ceramic powder can be used, but preferably, at least one of metal powder, metal oxide powder, and metal powder having an oxide film can be used, more preferably. At least one of copper powder, copper oxide powder, and copper powder having an oxide film can be used. When a powder containing copper is used as the inorganic powder 1, most of the powder is biased to the side opposite to the surface in contact with the substrate, but the powder remaining on the substrate side also has an effect of improving the adhesion with the substrate. preferable.
 また、無機物粉末1は、絶縁性の粒子を用いることができ、例えば、基板11と同様の材料からなる粉末(例えば、アルミナ粉末)を用いることができる。 In addition, as the inorganic powder 1, insulating particles can be used. For example, a powder (for example, alumina powder) made of the same material as the substrate 11 can be used.
 無機物粉末1は、導電性粉末100質量部に対して、10質量部以上45質量部以下含まれることが好ましく、15質量部以上45質量部以下含まれることがより好ましい。無機物粉末1の含有量が10質量部未満である場合、接合の防止効果が不十分となることがある。無機物粉末1の含有量が45質量部超である場合、隣接する他の部材に粉末が転写されやすくなったり、得られる導体の抵抗率が高くなったりすることがある。 The inorganic powder 1 is preferably contained in an amount of 10 to 45 parts by mass, and more preferably 15 to 45 parts by mass with respect to 100 parts by mass of the conductive powder. When the content of the inorganic powder 1 is less than 10 parts by mass, the joint prevention effect may be insufficient. When the content of the inorganic powder 1 is more than 45 parts by mass, the powder may be easily transferred to another adjacent member, or the resistivity of the obtained conductor may be increased.
 本実施形態の導体形成用組成物は、上記無機物粉末1以外に、導電性粉末と、ガラスフリットと、有機ビヒクルと、を含む。これらの成分は、特に限定されず、導体形成用組成物に使用される公知の粉末材料を用いることができる。以下、導体形成用組成物を構成する各成分の一例について、説明する。 In addition to the inorganic powder 1, the conductor-forming composition of the present embodiment includes a conductive powder, a glass frit, and an organic vehicle. These components are not particularly limited, and known powder materials used for the conductor-forming composition can be used. Hereinafter, an example of each component constituting the conductor-forming composition will be described.
[導電性粉末]
 導電性粉末は、特に限定されず、導体形成用組成物に使用される公知の導電性粉末を用いることができる。導電性粉末は、例えば、Au、Ag、PdおよびPtのうちの少なくとも一種類を含むことができる。また、導電性粉末は、導体形成用組成物全体に対して、30質量%以上60質量%以下含まれることができる。
[Conductive powder]
The conductive powder is not particularly limited, and a known conductive powder used for the conductor-forming composition can be used. The conductive powder can include, for example, at least one of Au, Ag, Pd, and Pt. Further, the conductive powder can be contained in an amount of 30% by mass or more and 60% by mass or less based on the entire conductor-forming composition.
[ガラスフリット]
 ガラスフリットは、特に制限されず、導体形成用組成物に使用される公知のガラスフリットを用いることができる。ガラスフリットは、例えば、平均粒径が0.5μm以上5μm以下で、軟化点が500℃以上700℃以下のガラスフリットを用いることができる。ガラスフリットは、無鉛ガラスフリット用いることが好ましく、具体的には、ホウ珪酸ガラス(SiO-B系)等の実質的にアルカリ金属を含まないガラスフリットが使用できる。ガラスフリットには、ガラスと基板の濡れ性や、基板と導体の密着性の向上、さらに導体の耐酸化性を向上させる目的で、CaO、BaO、ZnO、TiO、Vなどをガラス成分として含んでもよい。また、ガラスフリットは、導体形成用組成物全体に対して、0.1質量%以上5質量%以下の範囲で含まれることができる。
[Glass frit]
The glass frit is not particularly limited, and a known glass frit used for the conductor-forming composition can be used. As the glass frit, for example, a glass frit having an average particle size of 0.5 μm or more and 5 μm or less and a softening point of 500 ° C. or more and 700 ° C. or less can be used. The glass frit is preferably a lead-free glass frit, and specifically, a glass frit substantially free of alkali metal such as borosilicate glass (SiO 2 —B 2 O 3 series) can be used. Glass frit is made of CaO, BaO, ZnO, TiO 2 , V 2 O 5 or the like for the purpose of improving the wettability between glass and substrate, the adhesion between the substrate and conductor, and further improving the oxidation resistance of the conductor. It may be included as a component. Further, the glass frit can be contained in the range of 0.1% by mass or more and 5% by mass or less with respect to the entire conductor-forming composition.
[有機ビヒクル]
 有機ビヒクルは、バインダ樹脂を溶剤に溶解したものである。バインダ樹脂としては、特に限定されず、従来と同様の樹脂を用いることができ、例えば、エチルセルロース、メタクリレートなどを用いることができる。バインダ樹脂は、導体形成用組成物に対して1質量%以上10質量%以下の範囲で含有されることが好ましい。バインダ樹脂の含有量が1質量%未満である場合、導体形成用組成物のハンドリング性が悪く、導体を形成する際に必要なペーストとしての粘度特性が得られないことがある。一方、バインダ樹脂の含有量が10質量%を超える場合、得られる乾燥膜の表面にバインダ樹脂が溢れやすく、溢れたバインダ樹脂が無機物粉末1を覆い、隣接する他の部材に付着することで、得られる導体と他の部材が接合することがある。
[Organic vehicle]
The organic vehicle is obtained by dissolving a binder resin in a solvent. The binder resin is not particularly limited, and a resin similar to the conventional one can be used. For example, ethyl cellulose, methacrylate or the like can be used. The binder resin is preferably contained in the range of 1% by mass to 10% by mass with respect to the conductor-forming composition. When the content of the binder resin is less than 1% by mass, the handling property of the conductor-forming composition is poor, and the viscosity characteristic as a paste necessary for forming a conductor may not be obtained. On the other hand, when the content of the binder resin exceeds 10% by mass, the binder resin easily overflows on the surface of the obtained dry film, and the overflowing binder resin covers the inorganic powder 1 and adheres to other adjacent members. The obtained conductor and other members may be joined.
 溶剤としては、特に限定されず、公知の溶剤を用いることができ、例えば、ターピネオール、ブチルカルビトールなどの有機溶剤を用いることができる。 The solvent is not particularly limited, and a known solvent can be used. For example, an organic solvent such as terpineol or butyl carbitol can be used.
[粘度調整用の溶剤]
 本実施形態の導体形成用組成物は、ペーストを作製した際の粘度を調整するための溶剤を、さらに含んでもよい。粘度調整用の溶剤は、特に限定されず、公知の溶剤を用いることができ、例えば、ターピネオール、ブチルカルビトールなどの有機溶剤を用いることができる。また、粘度調整用の溶剤は、上記の有機ビヒクルに含まれる溶剤と同一であってもよく、異なってもよい。また、導体形成用組成物全体における溶剤の含有量は、適宜調整することができ、例えば、導体形成用組成物全体に対して、20質量%以上60質量%以下の範囲とすることができる。
[Solvent for adjusting viscosity]
The conductor-forming composition of this embodiment may further contain a solvent for adjusting the viscosity when the paste is produced. The solvent for adjusting the viscosity is not particularly limited, and a known solvent can be used. For example, an organic solvent such as terpineol or butyl carbitol can be used. The solvent for adjusting the viscosity may be the same as or different from the solvent contained in the organic vehicle. Moreover, content of the solvent in the whole conductor formation composition can be adjusted suitably, for example, can be 20 mass% or more and 60 mass% or less with respect to the whole conductor formation composition.
 本実施形態の導体形成用組成物の製造方法は、特に限定されず、従来公知の製造方法を用いることができ、例えば、上記の導電性粉末と、無機物粉末1と、ガラスフリットと、有機ビヒクルと、を含む材料を、3本ロールミルなどで混合することにより製造することができる。 The manufacturing method of the composition for forming a conductor according to this embodiment is not particularly limited, and a conventionally known manufacturing method can be used. For example, the conductive powder, the inorganic powder 1, the glass frit, and the organic vehicle are used. Can be manufactured by mixing with a three-roll mill or the like.
 図3は、上記導体形成用組成物を用いて製造される本実施形態の導体の製造方法の一例を示すフローチャートである。以下、図3を参照して、本実施形態の導体の製造方法について説明する。 FIG. 3 is a flowchart showing an example of a method for producing a conductor of the present embodiment produced using the above-described conductor-forming composition. Hereinafter, with reference to FIG. 3, the manufacturing method of the conductor of this embodiment is demonstrated.
 まず、上記導体形成用組成物を基板の少なくとも一方の面に塗布する(ステップS1)。塗布は、例えば、スクリーン印刷等を用いることができる。基板は、例えば、スリットを有するスリット基板を用いることができる。スリット基板は、後の工程で、スリットに沿って、分割され、それぞれのチップ部品が形成される。なお、スリット基板を用いる場合、図1~図2に示される基板部20は、チップ部品(例えば、チップ抵抗体)における一つのチップ分に対応する基板部分である。 First, the conductor forming composition is applied to at least one surface of the substrate (step S1). Application | coating can use screen printing etc., for example. As the substrate, for example, a slit substrate having a slit can be used. In a later step, the slit substrate is divided along the slits to form respective chip components. When using a slit substrate, the substrate portion 20 shown in FIGS. 1 and 2 is a substrate portion corresponding to one chip in a chip component (for example, a chip resistor).
 次いで、導体形成用組成物を塗布した基板を乾燥して、基板上に乾燥膜を形成する(ステップS2)。乾燥条件は、特に限定されず、導体形成用組成物に含まれる溶剤の少なくとも一部を除去できればよい。乾燥温度は、例えば、80℃以上150℃以下である。乾燥時間は、例えば、1分以上15分以下である。 Next, the substrate coated with the conductor-forming composition is dried to form a dry film on the substrate (step S2). The drying conditions are not particularly limited as long as at least a part of the solvent contained in the conductor-forming composition can be removed. Drying temperature is 80 degreeC or more and 150 degrees C or less, for example. Drying time is 1 minute or more and 15 minutes or less, for example.
 基板の両面(表面及び裏面)に上記導体形成用組成物を塗布する場合、基板の一方の面にスクリーン印刷などより塗布して乾燥した後、基板の他方の面に、同様に、上記導体形成用組成物を塗布して乾燥させる。この工程により、例えば、図2(A)に示されるように、基板部20の裏面及び表面の両面に、所定間隔を有し、対向する一対の乾燥膜11を得ることができる。 When applying the conductor forming composition to both surfaces (front and back surfaces) of the substrate, after applying and drying on one surface of the substrate by screen printing or the like, the conductor formation is similarly applied to the other surface of the substrate. Apply composition for drying. Through this step, for example, as shown in FIG. 2A, a pair of dry films 11 having a predetermined interval on both the back surface and the front surface of the substrate portion 20 can be obtained.
 次いで、乾燥膜を形成した基板を焼成する(ステップS3)。焼成工程(ステップS3)において、上記導体形成用組成物に含まれる導電性粉末が焼結し、図1(B)に示されるような導体部2が形成される。また、焼成が進行するに従って、無機物粉末1が基板と接する面とは反対側の内部よりも表面に多く存在する。焼成条件は、特に限定されず、導電性粉末が焼結する条件を用いることができるが、大気雰囲気中で行うことが好ましい。焼成温度は、例えば、600℃以上900℃以下である。ベルト炉を用いて焼成する場合、搬送速度を考慮し、600℃以上900℃以下で設定したピーク温度で所定時間、例えば1分以上15分以下保持されるように設定する。 Next, the substrate on which the dry film is formed is baked (step S3). In the firing step (step S3), the conductive powder contained in the conductor-forming composition is sintered to form the conductor portion 2 as shown in FIG. Further, as firing proceeds, the inorganic powder 1 is present on the surface more than the inside opposite to the surface in contact with the substrate. The firing conditions are not particularly limited, and the conditions under which the conductive powder is sintered can be used, but it is preferably performed in an air atmosphere. The firing temperature is, for example, 600 ° C. or higher and 900 ° C. or lower. When firing using a belt furnace, in consideration of the conveyance speed, it is set to be held at a peak temperature set at 600 ° C. or higher and 900 ° C. or lower for a predetermined time, for example, 1 minute or longer and 15 minutes or shorter.
 導体形成用組成物が、無機物粉末1として金属粉末を含む場合、金属粉末は、焼成の際、大気中の酸素と反応して酸化金属粉末又は酸化被膜を有する金属粉末を形成することができる。無機物粉末1が銅粉末である場合、銅粉末は、焼成の際、大気中の酸素と反応して酸化銅粉末又は酸化被膜を有する銅粉末を形成する。無機物粉末1として、銅粉末を用いると、基板との密着性にも優れるので好ましい。なお、導体形成用組成物に用いられる無機物粉末1としては、酸化銅粉末又は酸化被膜を有する銅粉末を直接、用いてもよい。 When the conductor-forming composition contains a metal powder as the inorganic powder 1, the metal powder can react with oxygen in the air during firing to form a metal oxide powder or a metal powder having an oxide film. When the inorganic powder 1 is a copper powder, the copper powder reacts with oxygen in the atmosphere during firing to form a copper oxide powder or a copper powder having an oxide film. It is preferable to use copper powder as the inorganic powder 1 because it is excellent in adhesion to the substrate. In addition, as the inorganic powder 1 used for the conductor forming composition, a copper oxide powder or a copper powder having an oxide film may be used directly.
 図4は、本実施形態の抵抗器の一例を示す模式図である。抵抗器100は、基板20、導体10、及び、抵抗体30を少なくとも備える。また、抵抗器100は、抵抗体30上に、ガラス層や樹脂層などの保護層40を有する。 FIG. 4 is a schematic diagram showing an example of the resistor of the present embodiment. The resistor 100 includes at least the substrate 20, the conductor 10, and the resistor 30. The resistor 100 includes a protective layer 40 such as a glass layer or a resin layer on the resistor 30.
 抵抗器100を構成する導体10は、図4に示すように、表面電極10a及び裏面電極10bを含む。表面電極10a及び/又は裏面電極10bは、上記導体形成用組成物を用いて形成される。また、導体10は、端面電極10cを含む。上記導体形成用組成物を用いて得られた導体10は、抵抗値が低く、優れた導電性を有するため、ファインライン化された電子部品に好適に用いることができる。 The conductor 10 which comprises the resistor 100 contains the surface electrode 10a and the back surface electrode 10b, as shown in FIG. The front electrode 10a and / or the back electrode 10b are formed using the conductor forming composition. The conductor 10 includes an end face electrode 10c. The conductor 10 obtained using the conductor-forming composition has a low resistance value and excellent conductivity, so that it can be suitably used for fine-lined electronic components.
 以下、本発明について実施例によりさらに説明を行うが、本発明の範囲は、実施例により制限されることはない。以下、各実施例及び比較例の詳細について説明する。 Hereinafter, the present invention will be further described with reference to examples, but the scope of the present invention is not limited by the examples. Hereinafter, details of each example and comparative example will be described.
(実施例1)
[導体形成用組成物(導電性ペースト)の作製]
 予め、バインダ樹脂としてエチルセルロースを有機ビヒクル中15質量%、溶剤としてターピネオールを有機ビヒクル中85質量%含む有機ビヒクルを作製した。
 次に、導電性粉末としてAg粉末を導電性ペースト全体に対して50質量%、SEM平均粒径1.0μmのCu粉末を導電性粉末100質量部に対し20質量部、ガラスフリットを導電性ペースト全体に対して3.0質量%、有機ビヒクルを、エチルセルロースが導電性ペースト全体に対して3.0質量%となるような量で添加して、3本ロールミル(ビューラー(株)製、SDY-300)を用いて混合し、最後に粘度調整用の溶剤を添加してペースト状の導体形成用組成物(導電性ペースト)を作製した。
Example 1
[Preparation of conductor forming composition (conductive paste)]
In advance, an organic vehicle containing 15% by mass of ethyl cellulose as the binder resin in the organic vehicle and 85% by mass of terpineol as the solvent in the organic vehicle was prepared.
Next, as the conductive powder, Ag powder is 50% by mass with respect to the entire conductive paste, Cu powder having an SEM average particle size of 1.0 μm is 20 parts by mass with respect to 100 parts by mass of the conductive powder, and glass frit is the conductive paste. A 3 roll mill (Bueller Co., Ltd., SDY-) was added in an amount such that 3.0% by mass of the organic vehicle and 3.0% by mass of ethyl cellulose with respect to the entire conductive paste. 300), and finally a solvent for viscosity adjustment was added to prepare a paste-like conductor-forming composition (conductive paste).
[乾燥膜、導体の作製]
 得られた導電性ペーストを、96%アルミナ基板上にスクリーン印刷機を用いて所定のパターン(幅20mm×長さ20mm)で印刷し、ベルト式乾燥炉を用いて150℃で5分間乾燥させて乾燥膜(膜厚15μm)を形成した。次に、乾燥膜がベルト炉のベルトに接触するように設置し、ピーク温度850℃で9分間、トータル50分で焼成し、導体を形成した。
[Dry film and conductor production]
The obtained conductive paste was printed on a 96% alumina substrate in a predetermined pattern (width 20 mm × length 20 mm) using a screen printer, and dried at 150 ° C. for 5 minutes using a belt-type drying furnace. A dry film (film thickness 15 μm) was formed. Next, the dried film was placed in contact with the belt of the belt furnace and fired at a peak temperature of 850 ° C. for 9 minutes for a total of 50 minutes to form a conductor.
[ベルトとの接合の評価]
 形成した導体は、ベルトとの接点部分を目視又は光学顕微鏡で観察し、接合の有無及びベルトへの転写(無機物粉末の付着)の有無を目視により観察して評価した。評価結果を表1に示す。また、導体(導電膜)の光学顕微鏡による観察結果を図5に示す。矢印で示す部分が、ベルトとの接触部分(接合部分)にあたる。
[Evaluation of joining with belt]
The formed conductor was evaluated by visually observing the contact portion with the belt or with an optical microscope, and visually observing the presence or absence of bonding and the presence or absence of transfer (inorganic powder adhesion) to the belt. The evaluation results are shown in Table 1. Moreover, the observation result by the optical microscope of a conductor (conductive film) is shown in FIG. A portion indicated by an arrow corresponds to a contact portion (joint portion) with the belt.
[導体の厚み、及び、抵抗値の測定]
 得られた導体の厚みは、触針式表面粗さ計((株)東京精密製、SURFCOM 480A)を用いて測定した。次に、デジタルマルチメーター((株)ADVANTEST製、R6871E)を用いて、幅0.5mm、長さ50mmの導体パターンの抵抗値を測定し、先に測定した膜の厚みから、膜厚5μmとして換算した時の抵抗値を算出した。測定結果を表1に示す。
[Measurement of conductor thickness and resistance]
The thickness of the obtained conductor was measured using a stylus type surface roughness meter (manufactured by Tokyo Seimitsu Co., Ltd., SURFCOM 480A). Next, using a digital multimeter (manufactured by ADVANTEST, R6871E), the resistance value of the conductor pattern having a width of 0.5 mm and a length of 50 mm was measured, and the film thickness measured previously was set to 5 μm. The resistance value when converted was calculated. The measurement results are shown in Table 1.
(実施例2)
 Cu粉末のSEM平均粒径を4.0μmに変更した以外は、実施例1と同様の条件で導電性ペーストを作製した。測定結果を表1に示す。
(Example 2)
A conductive paste was produced under the same conditions as in Example 1 except that the SEM average particle size of the Cu powder was changed to 4.0 μm. The measurement results are shown in Table 1.
(実施例3)
 Cu粉末の含有率を導電性粉末100質量部に対し40質量部に変更した以外は、実施例1と同様にペーストを作製した。測定結果を表1に示す。
(Example 3)
A paste was prepared in the same manner as in Example 1 except that the Cu powder content was changed to 40 parts by mass with respect to 100 parts by mass of the conductive powder. The measurement results are shown in Table 1.
(実施例4)
 Cu粉末(無機物粉末)をCuO粉末に変更した以外は、実施例1と同様の条件で導電性ペーストを作製した。測定結果を表1に示す。
Example 4
A conductive paste was produced under the same conditions as in Example 1 except that the Cu powder (inorganic powder) was changed to CuO powder. The measurement results are shown in Table 1.
(実施例5)
 Cu粉末(無機物粉末)をアルミナ粉末に変更した以外は、実施例1と同様の条件で導電性ペーストを作製した。測定結果を表1に示す。
(Example 5)
A conductive paste was produced under the same conditions as in Example 1 except that the Cu powder (inorganic powder) was changed to alumina powder. The measurement results are shown in Table 1.
 (比較例1)
 Cu粉末のSEM平均粒径を0.1μmに変更した以外は、実施例1と同様にペーストを作製した。測定結果を表1に示す。
(Comparative Example 1)
A paste was prepared in the same manner as in Example 1 except that the SEM average particle size of the Cu powder was changed to 0.1 μm. The measurement results are shown in Table 1.
(比較例2)
 Cu粉末のSEM平均粒径を10.0μmに変更した以外は、実施例1と同様にペーストを作製した。測定結果を表1に示す。
(Comparative Example 2)
A paste was prepared in the same manner as in Example 1 except that the SEM average particle size of the Cu powder was changed to 10.0 μm. The measurement results are shown in Table 1.
(比較例3)
 Cu粉末の含有率を導電性粉末100質量部に対し2.0質量部に変更した以外は、実施例1と同様にペーストを作製した。測定結果を表1に示す。
(Comparative Example 3)
A paste was prepared in the same manner as in Example 1 except that the content of the Cu powder was changed to 2.0 parts by mass with respect to 100 parts by mass of the conductive powder. The measurement results are shown in Table 1.
(比較例4)
 Cu粉末の含有率を導電性粉末100質量部に対し50質量部に変更した以外は、実施例1と同様にペーストを作製した。
(Comparative Example 4)
A paste was prepared in the same manner as in Example 1 except that the Cu powder content was changed to 50 parts by mass with respect to 100 parts by mass of the conductive powder.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
(評価結果)
 実施例で得られた導体は、膜厚が約7μm~9μmで、5μm換算の抵抗値は20mΩ以上40mΩ以下であった。また、5μm換算の抵抗値は、条件により、25mΩ以下とすることができた。また、これらの導体の表面を目視およびSEM観察をしたところベルトとの接合およびベルトへの転写は確認されなかった。図5に、実施例1の組成物を用いて形成した導体を載置したベルトの部分をSEM観察した写真を示す。導体が載置されたベルトの部分を確認したが、導体の構成成分およびCu粉末の付着は確認されなかった。
(Evaluation results)
The conductor obtained in the example had a film thickness of about 7 μm to 9 μm, and a resistance value in terms of 5 μm was 20 mΩ or more and 40 mΩ or less. The resistance value in terms of 5 μm could be 25 mΩ or less depending on the conditions. Further, when the surfaces of these conductors were visually and SEM-observed, the joining with the belt and the transfer to the belt were not confirmed. In FIG. 5, the photograph which observed the part of the belt which mounted the conductor formed using the composition of Example 1 by SEM is shown. The portion of the belt on which the conductor was placed was confirmed, but the constituent components of the conductor and the adhesion of Cu powder were not confirmed.
 一方、比較例1の組成を用いて形成した導体は、SEM平均粒径0.1μmの無機物粉末を用いており、ベルトに載置した部分の表面が変形していることが目視で確認された。図6に、比較例1の組成を用いて形成した導体部を載置したベルトの部分をSEM観察した写真を示す。図6に示されるように、比較例1の組成を用いて形成した導体は、導体(膜)の表面が剥離してベルトと接合し、転写していることが確認された。 On the other hand, the conductor formed using the composition of Comparative Example 1 uses an inorganic powder having an SEM average particle size of 0.1 μm, and it was visually confirmed that the surface of the portion placed on the belt was deformed. . In FIG. 6, the photograph which observed the part of the belt which mounted the conductor part formed using the composition of the comparative example 1 by SEM is shown. As shown in FIG. 6, it was confirmed that the conductor formed using the composition of Comparative Example 1 was peeled off from the surface of the conductor (film), joined to the belt, and transferred.
 比較例2の組成を用いて形成した導体は、SEM平均粒径10μmの無機物粉末を用いており、5μm換算の抵抗値が51.2mΩと高い値を示した。また、導体の表面には、ベルトと接合した痕跡は確認されず、ベルトにおいても、導体と接触した部分に導体の構成成分およびCu粉末の付着は確認されなかった。 The conductor formed using the composition of Comparative Example 2 uses an inorganic powder having an SEM average particle diameter of 10 μm, and the resistance value in terms of 5 μm was as high as 51.2 mΩ. In addition, no trace of bonding with the belt was confirmed on the surface of the conductor, and no adhesion of the constituent components of the conductor and Cu powder was confirmed on the belt in contact with the conductor.
 比較例3の組成を用いて形成した導体は、無機物粉末の含有量が10質量部未満であり、ベルトに載置した部分の表面が変形していることが目視で確認された。SEM観察の結果、導体の表面が剥離してベルトと接合し、転写していることが確認された。 The conductor formed using the composition of Comparative Example 3 had an inorganic powder content of less than 10 parts by mass, and it was visually confirmed that the surface of the part placed on the belt was deformed. As a result of SEM observation, it was confirmed that the surface of the conductor was peeled off, joined to the belt, and transferred.
 比較例4の組成を用いて形成した導体は、無機物粉末の含有量が45質量部超であり、5μm換算の抵抗値が65.7mΩと高い値を示した。導体の表面を目視およびSEM観察をしたところベルトとの接合は確認されなかった。一方で、ベルトの導体膜と接触した部分を確認したところ、Cu粉末の一部が転写されている様子が確認された。 The conductor formed using the composition of Comparative Example 4 had an inorganic powder content of more than 45 parts by mass and a high resistance value of 65.7 mΩ in terms of 5 μm. When the surface of the conductor was visually and SEM-observed, bonding with the belt was not confirmed. On the other hand, when a portion in contact with the conductive film of the belt was confirmed, it was confirmed that a part of the Cu powder was transferred.
 なお、本発明の技術範囲は、上記の実施形態に限定されるものではない。例えば、上記の実施形態で説明した要件の1つ以上は、省略されることがある。また、上記の実施形態で説明した要件は、適宜組み合わせることができる。また、法令で許容される限りにおいて、日本国特許出願である特願2017-104658、及び上述の実施形態などで引用した全ての文献、の内容を援用して本文の記載の一部とする。 Note that the technical scope of the present invention is not limited to the above embodiment. For example, one or more of the requirements described in the above embodiments may be omitted. The requirements described in the above embodiments can be combined as appropriate. In addition, as long as it is permitted by law, the contents of Japanese Patent Application No. 2017-104658, which is a Japanese patent application, and all the references cited in the above-described embodiments, etc., are incorporated into the description of this text.
1…無機物粉末
2…導体部
10…導体
10a…表面電極
10b…裏面電極
10c…端面電極
11…乾燥膜
20…基板部
25…ベルト部材
30…抵抗体
40…保護層
100…抵抗器
DESCRIPTION OF SYMBOLS 1 ... Inorganic substance powder 2 ... Conductor part 10 ... Conductor 10a ... Surface electrode 10b ... Back electrode 10c ... End face electrode 11 ... Dry film 20 ... Substrate part 25 ... Belt member 30 ... Resistor 40 ... Protective layer 100 ... Resistor

Claims (13)

  1.  導電性粉末と、前記導電性粉末以外の無機物粉末と、ガラスフリットと、有機ビヒクルと、を含む導体形成用組成物であって、
     前記無機物粉末は、SEM測定に基づく平均粒径が0.3μm以上5.0μm以下であり、前記導電性粉末よりも高い焼結開始温度を有し、前記導電性粉末100質量部に対して10質量部以上45質量部以下含まれる、導体形成用組成物。
    A conductor-forming composition comprising a conductive powder, an inorganic powder other than the conductive powder, a glass frit, and an organic vehicle,
    The inorganic powder has an average particle size based on SEM measurement of 0.3 μm or more and 5.0 μm or less, has a sintering start temperature higher than that of the conductive powder, and is 10 per 100 parts by mass of the conductive powder. A composition for forming a conductor, which is contained in an amount of from 45 parts by weight to 45 parts by weight.
  2.  前記無機物粉末は、金属粉末、金属酸化物粉末、及び、酸化被膜を有する金属粉末のうち少なくとも一つを含む、請求項1に記載の導体形成用組成物。 2. The conductor-forming composition according to claim 1, wherein the inorganic powder includes at least one of a metal powder, a metal oxide powder, and a metal powder having an oxide film.
  3.  前記無機物粉末は、銅粉末、酸化銅粉末、及び、酸化被膜を有する銅粉末のうち少なくとも一つを含む、請求項2に記載の導体形成用組成物。 3. The conductor-forming composition according to claim 2, wherein the inorganic powder includes at least one of copper powder, copper oxide powder, and copper powder having an oxide film.
  4.  前記有機ビヒクルは、バインダ樹脂と、溶剤とを含み、前記バインダ樹脂は、導体形成用組成物に対して1質量%以上10質量%以下含まれる、請求項1~請求項3のいずれか一項に記載の導体形成用組成物。 The organic vehicle includes a binder resin and a solvent, and the binder resin is included in an amount of 1% by mass to 10% by mass with respect to the conductor-forming composition. The composition for conductor formation as described in any one of.
  5.  前記導電性粉末は、Au、Ag、PdおよびPtのうち少なくとも1種類を含む、請求項1~請求項4のいずれか一項に記載の導体形成用組成物。 The conductor-forming composition according to any one of claims 1 to 4, wherein the conductive powder contains at least one of Au, Ag, Pd, and Pt.
  6.  ベルト炉を用いて前記導体形成用組成物をベルト部材と接触させて焼成した場合に、前記無機物粉末が前記導体の内部よりも表面に多く存在することにより、前記導電性粉末のベルト部材への焼付きを防止することができる、請求項1~請求項5のいずれか一項に記載の導体形成用組成物。 When the conductor-forming composition is baked in contact with a belt member using a belt furnace, the inorganic powder is present on the surface more than the inside of the conductor, whereby the conductive powder is applied to the belt member. The composition for forming a conductor according to any one of claims 1 to 5, which can prevent seizure.
  7.  チップ抵抗器の表面電極及び裏面電極の少なくとも一方の形成に用いられる請求項1~請求項6のいずれか一項に記載の導体形成用組成物。 The conductor forming composition according to any one of claims 1 to 6, which is used for forming at least one of a front electrode and a back electrode of a chip resistor.
  8.  請求項1~7のいずれか一項に記載の導体形成用組成物を基板の少なくとも一方の面に塗布することと、
     前記導体形成用組成物を塗布した基板を乾燥して、前記導体形成用組成物に含まれる溶剤の少なくとも一部を除去し、前記基板上に乾燥膜を形成することと、
     前記乾燥膜を形成した基板を焼成して、前記導体形成用組成物に含まれる導電性粉末を焼結させ、前記無機物粉末が、内部よりも前記基板と接する面とは反対側の表面に多く存在する導体を形成することと、
    を備える、導体の製造方法。
    Applying the composition for forming a conductor according to any one of claims 1 to 7 to at least one surface of a substrate;
    Drying the substrate coated with the conductor-forming composition, removing at least a portion of the solvent contained in the conductor-forming composition, and forming a dry film on the substrate;
    The substrate on which the dry film is formed is fired to sinter the conductive powder contained in the conductor-forming composition, and the inorganic powder is more on the surface opposite to the surface in contact with the substrate than inside. Forming an existing conductor;
    A method for producing a conductor.
  9.  前記導体形成用組成物は、前記無機物粉末として金属粉末を含み、前記金属粉末は、焼成の際、大気中の酸素と反応して酸化金属粉末又は酸化被膜を有する金属粉末を形成する、請求項8に記載の導体の製造方法。 The conductor-forming composition includes a metal powder as the inorganic powder, and the metal powder reacts with oxygen in the atmosphere during firing to form a metal powder having a metal oxide powder or an oxide film. The method for producing a conductor according to 8.
  10.  前記無機物粉末が、銅粉末である、請求項9に記載の導体の製造方法。 The method for producing a conductor according to claim 9, wherein the inorganic powder is a copper powder.
  11.  請求項1~7のいずれか一項に記載の導体形成用組成物を用いて基板上に形成される導体であって、前記無機物粉末は、前記導体内において、前記基板に接する面と反対側の面に偏って配置される、導体。 A conductor formed on a substrate using the conductor-forming composition according to any one of claims 1 to 7, wherein the inorganic powder is a side of the conductor opposite to a surface in contact with the substrate. A conductor that is biased to the surface.
  12.  請求項1~請求項7のいずれか一項に記載の導体形成用組成物を用いて形成された導体を有する電子部品。 An electronic component having a conductor formed using the conductor-forming composition according to any one of claims 1 to 7.
  13.  基板、導体、及び、抵抗体を少なくとも備え、前記導体は、請求項1~請求項7のいずれか一項に記載の導体形成用組成物を用いて形成された、チップ抵抗器。

     
    A chip resistor comprising at least a substrate, a conductor, and a resistor, wherein the conductor is formed using the conductor-forming composition according to any one of claims 1 to 7.

PCT/JP2018/018367 2017-05-26 2018-05-11 Composition for forming conductor, conductor, production method therefor, and chip resistor WO2018216509A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201880034345.5A CN110663088B (en) 2017-05-26 2018-05-11 Composition for forming conductor, method for producing conductor, and chip resistor
KR1020197035129A KR102543291B1 (en) 2017-05-26 2018-05-11 Composition for forming conductor, conductor and manufacturing method thereof, and chip resistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017104658A JP6801586B2 (en) 2017-05-26 2017-05-26 Compositions for forming conductors, conductors and their manufacturing methods, and chip resistors
JP2017-104658 2017-05-26

Publications (1)

Publication Number Publication Date
WO2018216509A1 true WO2018216509A1 (en) 2018-11-29

Family

ID=64395519

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2018/018367 WO2018216509A1 (en) 2017-05-26 2018-05-11 Composition for forming conductor, conductor, production method therefor, and chip resistor

Country Status (5)

Country Link
JP (1) JP6801586B2 (en)
KR (1) KR102543291B1 (en)
CN (1) CN110663088B (en)
TW (1) TWI783999B (en)
WO (1) WO2018216509A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07335402A (en) * 1994-06-06 1995-12-22 Sumitomo Metal Mining Co Ltd Paste for forming electrode on chip resistor
JP2004006846A (en) * 1996-07-16 2004-01-08 Murata Mfg Co Ltd Ceramic substrate and its production
WO2011090212A1 (en) * 2010-01-25 2011-07-28 日立化成工業株式会社 Electrode paste composition and solar cell

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08306580A (en) 1995-05-11 1996-11-22 Murata Mfg Co Ltd Ceramic electronic part and its manufacture
JPH09129480A (en) 1995-11-02 1997-05-16 Murata Mfg Co Ltd Manufacture of conductive paste and ceramic electronic part
JPH1012481A (en) 1996-06-24 1998-01-16 Murata Mfg Co Ltd Conductive paste and manufacturing method for ceramics electronic component
WO2001046979A1 (en) * 1999-12-21 2001-06-28 Matsushita Electric Industrial Co., Ltd. Plasma display panel and method for production thereof
JP2001297628A (en) 2000-02-09 2001-10-26 Murata Mfg Co Ltd Electrically conductive paste and ceramic electronic component
TWI441201B (en) * 2012-09-28 2014-06-11 Polytronics Technology Corp Surface mountable over-current protection device
KR101600652B1 (en) * 2012-11-12 2016-03-07 제일모직주식회사 Electrode paste for solar cell and electrode prepared thereof
US20160322163A1 (en) * 2015-04-28 2016-11-03 E I Du Pont De Nemours And Company Terminal electrode of electronic component

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07335402A (en) * 1994-06-06 1995-12-22 Sumitomo Metal Mining Co Ltd Paste for forming electrode on chip resistor
JP2004006846A (en) * 1996-07-16 2004-01-08 Murata Mfg Co Ltd Ceramic substrate and its production
WO2011090212A1 (en) * 2010-01-25 2011-07-28 日立化成工業株式会社 Electrode paste composition and solar cell

Also Published As

Publication number Publication date
KR102543291B1 (en) 2023-06-14
CN110663088B (en) 2021-08-27
CN110663088A (en) 2020-01-07
JP6801586B2 (en) 2020-12-16
JP2018200793A (en) 2018-12-20
TWI783999B (en) 2022-11-21
TW201901705A (en) 2019-01-01
KR20200016847A (en) 2020-02-17

Similar Documents

Publication Publication Date Title
JP2007018884A (en) Conductive paste
JP2010287678A (en) Front electrode and back electrode of chip resistor
JP4691809B2 (en) Thick film circuit board and manufacturing method thereof
JP2011129884A (en) Method of manufacturing ceramic electronic component, and ceramic electronic component
KR102569071B1 (en) Conductor-forming composition and its manufacturing method, conductor and its manufacturing method, chip resistor
JPH09180541A (en) Conductive paste, conductive body using it, and ceramic substrate
JP6968524B2 (en) Manufacturing method of thick film conductive paste and ceramic multilayer laminated electronic components
JP2004228094A (en) Terminal electrode composition material for multi-layer ceramic capacitor
WO2016186185A1 (en) Cu paste composition for forming thick film conductor, and thick film conductor
WO2018216509A1 (en) Composition for forming conductor, conductor, production method therefor, and chip resistor
JP6623920B2 (en) Method for producing conductive composition and terminal electrode
JP4528502B2 (en) Wiring board
JP2018055767A (en) Lead-free conductive paste
JP3929989B2 (en) An electrically conductive paste and a ceramic multilayer circuit board using the electrically conductive paste.
JP7132591B2 (en) Conductive paste and sintered body
JP7159549B2 (en) Method for making conductive paste
JP5285016B2 (en) Wiring board
JP2017135242A (en) Thick film copper electrode or wiring and formation method therefor
JP2013118119A (en) Conductive paste, and low-temperature-baked ceramic multilayer substrate with the same
JP3222296B2 (en) Conductive ink
JP2006128005A (en) Conductive paste and printed circuit board
JP2011077431A (en) Method of manufacturing ceramic substrate
JP2019114370A (en) Conductive composition, conductive paste, and electronic component
JP2019079983A (en) Conductive paste for external electrode formation of laminate chip component and laminate chip component
JP2006164799A (en) Conductive paste, its production method and ceramic multilayer board

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18806202

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20197035129

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18806202

Country of ref document: EP

Kind code of ref document: A1