WO2018208274A3 - Aligned electrical and optical confinement - Google Patents

Aligned electrical and optical confinement Download PDF

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Publication number
WO2018208274A3
WO2018208274A3 PCT/TR2017/050728 TR2017050728W WO2018208274A3 WO 2018208274 A3 WO2018208274 A3 WO 2018208274A3 TR 2017050728 W TR2017050728 W TR 2017050728W WO 2018208274 A3 WO2018208274 A3 WO 2018208274A3
Authority
WO
WIPO (PCT)
Prior art keywords
optical confinement
aligned electrical
electrical
aligned
producing
Prior art date
Application number
PCT/TR2017/050728
Other languages
French (fr)
Other versions
WO2018208274A8 (en
WO2018208274A2 (en
Inventor
Abdullah Demi̇r
Original Assignee
Demir Abdullah
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Demir Abdullah filed Critical Demir Abdullah
Priority to CN201780081435.5A priority Critical patent/CN110337765A/en
Publication of WO2018208274A2 publication Critical patent/WO2018208274A2/en
Publication of WO2018208274A3 publication Critical patent/WO2018208274A3/en
Publication of WO2018208274A8 publication Critical patent/WO2018208274A8/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/18327—Structure being part of a DBR
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H01S5/2209—GaInP based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18391—Aperiodic structuring to influence the near- or far-field distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials

Abstract

This invention is a method of producing a surface emitting semiconductor light source, wherein the lateral dimensions can be determined by a lithographic process using epitaxially buried structures, providing electrical and optical confinements.
PCT/TR2017/050728 2016-12-30 2017-12-29 Aligned electrical and optical confinement WO2018208274A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201780081435.5A CN110337765A (en) 2016-12-30 2017-12-29 Semiconductor light source with extension embeddability autoregistration electricity and optical confinement

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TR2016/20378 2016-12-30
TR2016/20378A TR201620378A2 (en) 2016-12-30 2016-12-30 Method of obtaining surface emission semiconductor light source with embedded electrical and optical restriction layer.

Publications (3)

Publication Number Publication Date
WO2018208274A2 WO2018208274A2 (en) 2018-11-15
WO2018208274A3 true WO2018208274A3 (en) 2019-01-31
WO2018208274A8 WO2018208274A8 (en) 2019-08-01

Family

ID=64102803

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/TR2017/050728 WO2018208274A2 (en) 2016-12-30 2017-12-29 Aligned electrical and optical confinement

Country Status (3)

Country Link
CN (1) CN110337765A (en)
TR (1) TR201620378A2 (en)
WO (1) WO2018208274A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220126450A (en) * 2021-03-09 2022-09-16 주식회사 레이아이알 Laser device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001017078A1 (en) * 1999-08-31 2001-03-08 Honeywell Inc. Coupled cavity anti-guided vertical cavity surface emitting laser (vcsel)
US20050249254A1 (en) * 2004-04-14 2005-11-10 Deppe Dennis G Current-confinement heterostructure for an epitaxial mode-confined vertical cavity surface emitting laser
WO2010027581A1 (en) * 2008-09-04 2010-03-11 3M Innovative Properties Company Monochromatic light source
US20100215070A1 (en) * 2009-02-24 2010-08-26 Fujitsu Limited Multiwavelength optical device and manufacturing method of multiwavelength optical device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5446752A (en) * 1993-09-21 1995-08-29 Motorola VCSEL with current blocking layer offset
US5903590A (en) * 1996-05-20 1999-05-11 Sandia Corporation Vertical-cavity surface-emitting laser device
US6608849B2 (en) * 2001-06-13 2003-08-19 Wisconsin Alumni Research Foundation Vertical-cavity surface-emitting semiconductor laser arrays
WO2006024025A2 (en) * 2004-08-25 2006-03-02 Nanosource, Inc. Optical-mode-confined and electrical-current-confined semiconductor light sources utilizing resistive interfacial layers

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001017078A1 (en) * 1999-08-31 2001-03-08 Honeywell Inc. Coupled cavity anti-guided vertical cavity surface emitting laser (vcsel)
US20050249254A1 (en) * 2004-04-14 2005-11-10 Deppe Dennis G Current-confinement heterostructure for an epitaxial mode-confined vertical cavity surface emitting laser
WO2010027581A1 (en) * 2008-09-04 2010-03-11 3M Innovative Properties Company Monochromatic light source
US20100215070A1 (en) * 2009-02-24 2010-08-26 Fujitsu Limited Multiwavelength optical device and manufacturing method of multiwavelength optical device

Also Published As

Publication number Publication date
WO2018208274A8 (en) 2019-08-01
TR201620378A2 (en) 2017-05-22
CN110337765A (en) 2019-10-15
WO2018208274A2 (en) 2018-11-15

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