WO2018205339A1 - 释放阵列基板的膜层应力的方法及装置 - Google Patents

释放阵列基板的膜层应力的方法及装置 Download PDF

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WO2018205339A1
WO2018205339A1 PCT/CN2017/088190 CN2017088190W WO2018205339A1 WO 2018205339 A1 WO2018205339 A1 WO 2018205339A1 CN 2017088190 W CN2017088190 W CN 2017088190W WO 2018205339 A1 WO2018205339 A1 WO 2018205339A1
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stage
array substrate
curvature
curved surface
radius
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PCT/CN2017/088190
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English (en)
French (fr)
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熊源
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深圳市华星光电半导体显示技术有限公司
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Priority to US15/577,767 priority Critical patent/US10302976B2/en
Publication of WO2018205339A1 publication Critical patent/WO2018205339A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method and apparatus for releasing film layer stress of an array substrate.
  • LCDs liquid crystal displays
  • Various consumer electronic products such as digital assistants, digital cameras, notebook computers, and desktop computers have become mainstream in display devices.
  • liquid crystal display devices which include a liquid crystal display panel and a backlight module.
  • the working principle of the liquid crystal display panel is to place liquid crystal molecules in two parallel glass substrates. There are many vertical and horizontal small wires between the two glass substrates, and the liquid crystal molecules are controlled to change direction by energizing or not, and the light of the backlight module is changed. Refracted to produce a picture.
  • the liquid crystal display panel comprises a CF (Color Filter) substrate, a Thin Film Transistor (TFT) array substrate, a liquid crystal (LC) sandwiched between the color filter substrate and the array substrate, and a sealant frame ( Sealant),
  • the molding process generally includes: front array (Array) process (film, yellow, etching and stripping), middle cell (Cell) process (array substrate and color film substrate) and back module Assembly process (drive IC and printed circuit board are pressed together).
  • the front Array process mainly forms an array substrate to control the movement of liquid crystal molecules;
  • the middle Cell process mainly adds liquid crystal between the array substrate and the color film substrate;
  • the rear module assembly process is mainly driving IC pressing and printing.
  • the integration of the circuit board drives the liquid crystal molecules to rotate and display images.
  • the array substrate is subjected to multiple processes such as Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD), and various inorganic, organic, and metal thin films are deposited using different parameters to make the array.
  • CVD Chemical Vapor Deposition
  • PVD Physical Vapor Deposition
  • various inorganic, organic, and metal thin films are deposited using different parameters to make the array.
  • the stress between the inner layers changes when subjected to an external force, so that the performance of the device on the array substrate may be shifted to different degrees (such as uneven pressure such as partial pressure), so that the panel appears.
  • An unequal exception is displayed.
  • An object of the present invention is to provide a method for releasing film stress of an array substrate, which can effectively release stress accumulated between the film layers in the preparation process of the array substrate, reduce display defects of the display panel, and ensure product yield.
  • Another object of the present invention is to provide a device for releasing the film layer stress of the array substrate, which can effectively release the stress accumulated between the film layers in the preparation process of the array substrate, reduce display defects of the display panel, and ensure product yield.
  • the present invention provides a method of releasing film stress of an array substrate, comprising the steps of:
  • Step 1 Providing a flexible stage and a stage curvature adjusting mechanism connected to the stage;
  • Step 2 providing an array substrate, the length of the long side of the array substrate is less than the length and width of the stage;
  • Step 3 driving the stage by the stage curvature adjusting mechanism to bend the upper surface of the stage into a first curved surface, placing the array substrate on the upper surface of the stage, and making the array substrate a first center line coincides with a center line of the first curved surface, the first curved surface is a curved surface recessed with respect to a horizontal plane, and a radius of curvature is a preset first radius of curvature;
  • Step 4 The array substrate is allowed to rest on the stage for a predetermined period of time, and the curvature of the stage is gradually changed by the stage curvature adjusting mechanism for the predetermined period of time, so that the upper surface of the stage is The first curved surface is changed into a second curved surface, the second curved surface is a curved surface convex with respect to the horizontal plane, and the radius of curvature is a preset second radius of curvature;
  • Step 5 removing the array substrate, returning the upper surface of the stage to a first curved surface by a stage curvature adjusting mechanism, rotating the array substrate 90 degrees along a center point thereof, and then relocating the array substrate to the load a top surface of the stage, and a second center line of the array substrate coincides with a center line of the first curved surface, the second center line being perpendicular to the first center line;
  • Step 6 The array substrate is further allowed to stand on the stage for a preset period of time, and the curvature of the stage is gradually changed by the stage curvature adjusting mechanism for the predetermined period of time, so that the upper surface of the stage is The first curved surface changes to a second curved surface, and the release of the film stress of the array substrate is completed.
  • the first radius of curvature is 4m to 10m.
  • the second radius of curvature is 4m to 10m.
  • the preset duration is 10 to 30 minutes.
  • the release of the film layer stress of the array substrate is performed before the start of the tape forming process.
  • the material of the stage is a rubber or resin type material.
  • the step curvature adjusting mechanism in the steps 4 and 6 is controlled within the preset time period.
  • the curvature of the stage changes every 1 minute.
  • the center point of the array substrate coincides with the center point of the stage.
  • the present invention also provides an apparatus for releasing film layer stress of an array substrate, comprising: a flexible stage and a stage curvature adjusting mechanism connected to the stage;
  • the stage curvature adjusting mechanism is configured to control an upper surface of the stage to change between a first curved surface and a second curved surface;
  • the first curved surface is a curved surface recessed with respect to a horizontal plane
  • the radius of curvature is a preset first radius of curvature
  • the second curved surface is a curved surface convex with respect to a horizontal plane
  • the radius of curvature is a preset second Radius of curvature.
  • the first radius of curvature and the second radius of curvature are both 4m to 10m; the material of the stage is rubber or resin-based material.
  • the invention also provides a method for releasing film layer stress of an array substrate, comprising the following steps:
  • Step 1 Providing a flexible stage and a stage curvature adjusting mechanism connected to the stage;
  • Step 2 providing an array substrate, the length of the long side of the array substrate is less than the length and width of the stage;
  • Step 3 driving the stage by the stage curvature adjusting mechanism to bend the upper surface of the stage into a first curved surface, placing the array substrate on the upper surface of the stage, and making the array substrate a first center line coincides with a center line of the first curved surface, the first curved surface is a curved surface recessed with respect to a horizontal plane, and a radius of curvature is a preset first radius of curvature;
  • Step 4 The array substrate is allowed to rest on the stage for a predetermined period of time, and the curvature of the stage is gradually changed by the stage curvature adjusting mechanism for the predetermined period of time, so that the upper surface of the stage is The first curved surface is changed into a second curved surface, the second curved surface is a curved surface convex with respect to the horizontal plane, and the radius of curvature is a preset second radius of curvature;
  • Step 5 removing the array substrate, returning the upper surface of the stage to a first curved surface by a stage curvature adjusting mechanism, rotating the array substrate 90 degrees along a center point thereof, and then relocating the array substrate to the load a top surface of the stage, and a second center line of the array substrate coincides with a center line of the first curved surface, the second center line being perpendicular to the first center line;
  • Step 6 The array substrate is further allowed to stand on the stage for a preset period of time, and the curvature of the stage is gradually changed by the stage curvature adjusting mechanism for the predetermined period of time, so that the upper surface of the stage is The first curved surface changes to a second curved surface, and the release of the film stress of the array substrate is completed;
  • first radius of curvature is 4m to 10m;
  • the second radius of curvature is 4m to 10m.
  • the present invention provides a method of releasing a film layer stress of an array substrate,
  • the array substrate is statically placed on the stage with the curved surface, and then the curvature of the curved surface of the stage is gradually changed by the curvature adjustment mechanism of the stage, so that the array substrate is bent according to the curved surface of the stage under the action of gravity.
  • the degree of bending changes with the curvature of the curved surface of the stage, so that the film layers on the array substrate are subjected to uniform tensile stress or compressive stress, and finally the external substrate is released under the action of the external force.
  • the stress accumulated between the layers avoids subsequent processes and external pressure during use, which affects the device performance on the array substrate, reduces display defects of the display panel, and ensures product yield.
  • the invention also provides a device for releasing the film layer stress of the array substrate, which can effectively release the stress accumulated between the film layers in the preparation process of the array substrate, reduce display defects of the display panel, and ensure product yield.
  • FIG. 1 is a schematic cross-sectional view showing steps 1 to 3 of a method for releasing a film layer stress of an array substrate according to the present invention
  • FIG. 2 is a schematic cross-sectional view showing a step 4 of a method for releasing a film layer stress of an array substrate according to the present invention
  • FIG. 3 is a top plan view showing steps 1 to 4 of the method for releasing film layer stress of an array substrate of the present invention
  • FIG. 4 is a schematic cross-sectional view showing a step 5 of a method for releasing a film layer stress of an array substrate according to the present invention
  • FIG. 5 is a schematic cross-sectional view showing a step 6 of a method for releasing a film layer stress of an array substrate according to the present invention
  • FIG. 6 is a top plan view showing steps 5 and 6 of the method for releasing film layer stress of the array substrate of the present invention
  • FIG. 7 is a flow chart of a method for releasing film layer stress of an array substrate of the present invention.
  • FIG. 8 is a schematic structural view of an apparatus for releasing a film layer stress of an array substrate according to the present invention.
  • the present invention provides a method for releasing film stress of an array substrate, including, for example, Next steps:
  • Step 1 Referring to Figure 1, a flexible stage 1 and a stage curvature adjusting mechanism 3 connected to the stage 1 are provided.
  • the material of the stage 1 is a rubber or resin-based material
  • the stage curvature adjusting mechanism 3 can cause a curved deformation of the surface of the stage 1 by providing the stage 1 with a different pulling force or thrust.
  • Step 2 Referring to FIG. 1 and FIG. 3, an array substrate 2 is provided.
  • the length of the long side of the array substrate 2 is smaller than the length and width of the stage 1.
  • the present invention does not limit the specific film layer structure of the array substrate 2.
  • the array substrate 2 includes a base substrate, a TFT layer disposed on the base substrate, and a blunt layer disposed on the TFT layer. a layer, a flat layer provided on the passivation layer, and a film layer such as a pixel electrode provided on the flat layer.
  • the array substrate 2 herein may also include other film layers such as a color resist layer, or may be reduced. One or more of the above described layers will not affect the implementation of the present invention.
  • Step 3 referring to FIG. 1 and FIG. 3, the stage 1 is bent by the stage curvature adjusting mechanism 3 so that the upper surface of the stage 1 is deformed into a first curved surface, and the array substrate 2 is placed thereon.
  • the first curved surface is a curved surface recessed with respect to the horizontal plane, and the radius of curvature is Set the first radius of curvature.
  • the center point of the array substrate 2 coincides with the center point of the stage 1.
  • the first curvature radius of the preferred first curved surface ranges from 4 m to 10 m.
  • Step 4 referring to FIG. 1 , FIG. 2 and FIG. 3 , the array substrate 2 is placed on the stage 1 for a predetermined period of time, and gradually passes through the stage curvature adjusting mechanism 3 for the preset period of time.
  • the predetermined length of time ranges from 10 minutes to 30 minutes.
  • the stage curvature adjusting mechanism 3 controls the curvature of the stage 1 to change every one minute for the predetermined length of time.
  • the second radius of curvature of the preferred second curved surface ranges from 4 m to 10 m.
  • Step 5 referring to FIG. 4 and FIG. 6, the array substrate 2 is removed, and the upper surface of the stage 1 is restored to a first curved surface by the stage curvature adjusting mechanism 3, and the array substrate 2 is along the same
  • the center point is rotated 90 degrees and then repositioned onto the upper surface of the stage 1 and the second center line of the array substrate 2 coincides with the center line of the first curved surface, the second center line and The first centerline is vertical.
  • the second center line is a center line perpendicular to a long side of the array substrate 2
  • the first center line is a center line perpendicular to a wide side of the array substrate 2
  • the first center line A center line perpendicular to a long side of the array substrate 2
  • the second center line being a center line perpendicular to a wide side of the array substrate 2.
  • the center point of the array substrate 2 coincides with the center point of the stage 1.
  • Step 6 referring to FIG. 5 and FIG. 6, the array substrate 2 is continuously placed on the stage 1 for a preset period of time, and is gradually changed by the stage curvature adjusting mechanism 3 for the preset period of time.
  • the curvature of the stage 1 is such that the upper surface of the stage 1 is changed from the first curved surface to the second curved surface, and the release of the film stress of the array substrate 2 is completed.
  • the preset duration in the step 6 is the same as the preset duration in the step 4, and the preferred duration is also in the range of 10 minutes to 30 minutes, and the stage curvature adjusting mechanism 3 is within the preset duration.
  • the curvature of the control stage 1 is changed every 1 minute.
  • step 4 and step 6 the array substrate 2 is statically placed on the stage 1 having a curved surface, and then the curvature of the curved surface of the stage 1 is gradually changed by the stage curvature adjusting mechanism 3 to make the array
  • the substrate 2 is bent according to the curvature of the stage 1 by gravity and the degree of bending varies with the curvature of the curved surface of the stage 1, so that the film layers on the array substrate 2 are subjected to uniform tensile stress or compressive stress.
  • the stress accumulated between the film layers of the array substrate 2 during the preparation process can be effectively released.
  • step 6 by rotating the array substrate 2 by 90 degrees, each film layer on the array substrate 2 is subjected to uniform tensile stress or compressive stress in both the long side and the short side direction, thereby ensuring each film in the array substrate 2.
  • the method for releasing the film layer stress of the array substrate of the present invention is for releasing the film stress of the array substrate 2 before the start of the card forming process after the array process of the array substrate 2 is completed.
  • the present invention further provides an apparatus for releasing film layer stress of an array substrate for implementing the above method, comprising: a flexible stage 1 and a stage curvature adjusting mechanism 3 connected to the stage 1. ;
  • the stage curvature adjusting mechanism 3 is configured to control an upper surface of the stage 1 to change between a first curved surface and a second curved surface;
  • the first curved surface is a curved surface recessed with respect to a horizontal plane
  • the radius of curvature is a preset first radius of curvature
  • the second curved surface is a curved surface convex with respect to a horizontal plane
  • the radius of curvature is a preset second Radius of curvature.
  • the first radius of curvature and the second radius of curvature are both 4 m to 10 m;
  • the material of the stage 1 is a rubber or resin-based material.
  • the present invention provides a method for releasing the film stress of an array substrate by statically placing the array substrate on a stage having a curved surface, and gradually changing the arc of the stage by the stage curvature adjusting mechanism.
  • the curvature of the surface curvature causes the array substrate to be bent according to the curvature of the stage under the action of gravity and the degree of bending varies with the curvature of the curved surface of the stage, so that the layers on the array substrate are uniformly stretched.
  • Stress or compressive stress finally releasing the stress accumulated between the layers of the array substrate during the preparation process under the action of external force, avoiding the influence of subsequent processes and external pressure during use on the performance of the device on the array substrate, reducing the display panel Poor display, to ensure product yield.
  • the invention also provides a device for releasing the film layer stress of the array substrate, which can effectively release the stress accumulated between the film layers in the preparation process of the array substrate, reduce display defects of the display panel, and ensure product yield.

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Abstract

一种释放阵列基板的膜层应力的方法及装置。释放阵列基板的膜层应力的方法通过将阵列基板（2）静置于具有弧面的载台（1）上，再通过载台曲率调节机构（3）逐渐改变载台的弧面弯曲的曲率，让阵列基板在重力的作用下依照载台的弧面弯曲且弯曲程度随着载台的弧面的曲率的变化而变化，从而使得阵列基板上的各膜层受到均匀的张应力或者压应力，最终在外力的作用下释放阵列基板在制备过程中各膜层之间积累的应力，避免后续制程以及使用过程中的外部压力对阵列基板上的器件性能产生影响，减少显示面板的显示不良，保证产品良率。

Description

释放阵列基板的膜层应力的方法及装置 技术领域
本发明涉及显示技术领域，尤其涉及一种释放阵列基板的膜层应力的方法及装置。
背景技术
随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
现有市场上的液晶显示装置大部分为背光型液晶显示器，其包括液晶显示面板及背光模组(backlight module)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。
通常液晶显示面板由彩膜(CF，Color Filter)基板、薄膜晶体管(TFT，Thin Film Transistor)阵列基板、夹于彩膜基板与阵列基板之间的液晶(LC，Liquid Crystal)及密封胶框(Sealant)组成，其成型工艺一般包括：前段阵列(Array)制程(薄膜、黄光、蚀刻及剥膜)、中段成盒(Cell)制程(阵列基板与彩膜基板贴合)及后段模组组装制程(驱动IC与印刷电路板压合)。其中，前段Array制程主要是形成阵列基板，以便于控制液晶分子的运动；中段Cell制程主要是在阵列基板与彩膜基板之间添加液晶；后段模组组装制程主要是驱动IC压合与印刷电路板的整合，进而驱动液晶分子转动，显示图像。
阵列基板在制备过程中经过多次高温化学气相沉积(Chemical Vapor Deposition，CVD)和物理气相沉积(Physical Vapor Deposition，PVD)等制程，使用不同参数沉积多种无机、有机、以及金属薄膜，使得阵列基板在制备完成后内部膜层存在应力差异。在完成成盒制程以后，当受到外力作用时内部膜层间的应力发生变化，使得阵列基板上的器件性能会产生不同程度的漂移(如局部承压等压力不均的情况)，使得面板出现显示不均等异常情况。
发明内容
本发明的目的在于提供一种释放阵列基板的膜层应力的方法，能够有效释放阵列基板在制备过程中各膜层之间积累的应力，减少显示面板的显示不良，保证产品良率。
本发明的目的还在于提供一种释放阵列基板的膜层应力的装置，能够有效释放阵列基板在制备过程中各膜层之间积累的应力，减少显示面板的显示不良，保证产品良率。
为实现上述目的，本发明提供了一种释放阵列基板的膜层应力的方法，包括如下步骤：
步骤1、提供一柔性的载台以及一与所述载台相连的载台曲率调节机构；
步骤2、提供一阵列基板，所述阵列基板的长边的长度小于所述载台的长度和宽度；
步骤3、通过载台曲率调节机构带动所述载台弯曲使得所述载台的上表面变形为第一弧面，将所述阵列基板放置到载台的上表面上，并且使所述阵列基板的第一中心线与所述第一弧面的中心线重合，所述第一弧面为相对于水平面凹陷的弧面，曲率半径为预设的第一曲率半径；
步骤4、将所述阵列基板在所述载台上静置预设的时长，并且通过载台曲率调节机构在该预设的时长内逐渐改变载台弯曲的曲率，使得载台的上表面由第一弧面变化为第二弧面，所述第二弧面为相对于水平面凸起的弧面，曲率半径为预设的第二曲率半径；
步骤5、取下所述阵列基板，通过载台曲率调节机构使得所述载台的上表面恢复为第一弧面，将所述阵列基板沿其中心点旋转90度后重新放置到所述载台的上表面上，并使所述阵列基板的第二中心线与所述第一弧面的中心线重合，所述第二中心线与所述第一中心线垂直；
步骤6、将所述阵列基板在所述载台上继续静置预设的时长，并且通过载台曲率调节机构在该预设的时长内逐渐改变载台的曲率，使得载台的上表面由第一弧面变化为第二弧面，完成所述阵列基板的膜层应力的释放。
所述第一曲率半径为4m至10m。
所述第二曲率半径为4m至10m。
预设的时长为10至30分钟。
在所述阵列基板的阵列制程完成之后，成盒制程开始之前进行阵列基板的膜层应力的释放。
所述载台的材料为橡胶或树脂类材料。
所述步骤4和步骤6中所述载台曲率调节机构在该预设的时长内控制 载台的曲率每1分钟改变一次。
所述步骤3和步骤5中所述阵列基板置于所述载台上时，所述阵列基板的中心点与所述载台的中心点重合。
本发明还提供一种释放阵列基板的膜层应力的装置，包括：柔性的载台以及一与所述载台相连的载台曲率调节机构；
所述载台曲率调节机构用于控制所述载台的上表面在第一弧面与第二弧面之间变化；
所述第一弧面为相对于水平面凹陷的弧面，曲率半径为预设的第一曲率半径，所述第二弧面为相对于水平面凸起的弧面，曲率半径为预设的第二曲率半径。
所述第一曲率半径和第二曲率半径均为4m至10m；所述载台的材料为橡胶或树脂类材料。
本发明还提供一种释放阵列基板的膜层应力的方法，包括如下步骤：
步骤1、提供一柔性的载台以及一与所述载台相连的载台曲率调节机构；
步骤2、提供一阵列基板，所述阵列基板的长边的长度小于所述载台的长度和宽度；
步骤3、通过载台曲率调节机构带动所述载台弯曲使得所述载台的上表面变形为第一弧面，将所述阵列基板放置到载台的上表面上，并且使所述阵列基板的第一中心线与所述第一弧面的中心线重合，所述第一弧面为相对于水平面凹陷的弧面，曲率半径为预设的第一曲率半径；
步骤4、将所述阵列基板在所述载台上静置预设的时长，并且通过载台曲率调节机构在该预设的时长内逐渐改变载台弯曲的曲率，使得载台的上表面由第一弧面变化为第二弧面，所述第二弧面为相对于水平面凸起的弧面，曲率半径为预设的第二曲率半径；
步骤5、取下所述阵列基板，通过载台曲率调节机构使得所述载台的上表面恢复为第一弧面，将所述阵列基板沿其中心点旋转90度后重新放置到所述载台的上表面上，并使所述阵列基板的第二中心线与所述第一弧面的中心线重合，所述第二中心线与所述第一中心线垂直；
步骤6、将所述阵列基板在所述载台上继续静置预设的时长，并且通过载台曲率调节机构在该预设的时长内逐渐改变载台的曲率，使得载台的上表面由第一弧面变化为第二弧面，完成所述阵列基板的膜层应力的释放；
其中，所述第一曲率半径为4m至10m；
其中，所述第二曲率半径为4m至10m。
本发明的有益效果：本发明提供一种释放阵列基板的膜层应力的方法， 该方法通过将阵列基板静置于具有弧面的载台上，再通过载台曲率调节机构逐渐改变载台的弧面弯曲的曲率，让阵列基板在重力的作用下依照载台的弧面弯曲且弯曲程度随着载台的弧面的曲率的变化而变化，从而使得阵列基板上的各膜层受到均匀的张应力或者压应力，最终在外力的作用下释放阵列基板在制备过程中各膜层之间积累的应力，避免后续制程以及使用过程中的外部压力对阵列基板上的器件性能产生影响，减少显示面板的显示不良，保证产品良率。本发明还提供一种释放阵列基板的膜层应力的装置，能够有效释放阵列基板在制备过程中各膜层之间积累的应力，减少显示面板的显示不良，保证产品良率。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的释放阵列基板的膜层应力的方法的步骤1至步骤3的剖面示意图；
图2为本发明的释放阵列基板的膜层应力的方法的步骤4的剖面示意图；
图3为本发明的释放阵列基板的膜层应力的方法的步骤1至步骤4的俯视示意图；
图4为本发明的释放阵列基板的膜层应力的方法的步骤5的剖面示意图；
图5为本发明的释放阵列基板的膜层应力的方法的步骤6的剖面示意图；
图6为本发明的释放阵列基板的膜层应力的方法的步骤5和步骤6的俯视示意图；
图7为本发明的释放阵列基板的膜层应力的方法的流程图；
图8为本发明的释放阵列基板的膜层应力的装置的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图7，本发明提供一种释放阵列基板的膜层应力的方法，包括如 下步骤：
步骤1、请参阅图1，提供一柔性的载台1以及一与所述载台1相连的载台曲率调节机构3。
具体地，所述载台1的材料为橡胶或树脂类材料，所述载台曲率调节机构3可通过为所述载台1提供不同的拉力或推力使得载台1的表面产生弯曲形变。
步骤2、请参阅图1及图3，提供一阵列基板2，所述阵列基板2的长边的长度小于所述载台1的长度和宽度。
具体地，本发明不限制阵列基板2的具体膜层结构，一般情况下所述阵列基板2包括衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的钝化层、设于钝化层上的平坦层、以及设于所述平坦层上的像素电极等膜层，当然这里的阵列基板2也可以包括例如色阻层在内的其他膜层，或者减少上述膜层中的一个或多个，这些都不会影响本发明的实现。
步骤3、请参阅图1及图3，通过载台曲率调节机构3带动所述载台1弯曲使得所述载台1的上表面变形为第一弧面，将所述阵列基板2放置到载台1的上表面上，并且使所述阵列基板2的第一中心线与所述第一弧面的中心线重合，所述第一弧面为相对于水平面凹陷的弧面，曲率半径为预设的第一曲率半径。
优选地，所述步骤3中所述阵列基板2置于所述载台1上时，所述阵列基板2的中心点与所述载台1的中心点重合。
具体地，为保证应力释放的效果，优选的第一弧面的第一曲率半径范围为：4m至10m。
步骤4、请参阅图1、图2及图3，将所述阵列基板2在所述载台1上静置预设的时长，并且通过载台曲率调节机构3在该预设的时长内逐渐改变载台1弯曲的曲率，使得载台1的上表面由第一弧面变化为第二弧面，所述第二弧面为相对于水平面凸起的弧面，曲率半径为预设的第二曲率半径。
具体地，在保证应力释放的效果并且兼顾制程效率的情况下，优选地所述预设的时长的范围为：10分钟至30分钟。所述载台曲率调节机构3在该预设的时长内控制载台1的曲率每1分钟改变一次。
具体地，为保证应力释放的效果，优选的第二弧面的第二曲率半径范围为：4m至10m。
步骤5、请参阅图4及图6，取下所述阵列基板2，通过载台曲率调节机构3使得所述载台1的上表面恢复为第一弧面，将所述阵列基板2沿其 中心点旋转90度后重新放置到所述载台1的上表面上，并使所述阵列基板2的第二中心线与所述第一弧面的中心线重合，所述第二中心线与所述第一中心线垂直。
具体地，所述第二中心线为与所述阵列基板2长边垂直的中心线，所述第一中心线为与所述阵列基板2宽边垂直的中心线，或者所述第一中心线为与所述阵列基板2长边垂直的中心线，所述第二中心线为与所述阵列基板2宽边垂直的中心线。
优选地，所述步骤5中所述阵列基板2置于所述载台1上时，所述阵列基板2的中心点与所述载台1的中心点重合。
步骤6、请参阅图5及图6，将所述阵列基板2在所述载台1上继续静置预设的时长，并且通过载台曲率调节机构3在该预设的时长内逐渐改变载台1的曲率，使得载台1的上表面由第一弧面变化为第二弧面，完成所述阵列基板2的膜层应力的释放。
具体地，所述步骤6中预设的时长与所述步骤4中预设的时长相同，优选时长范围也为10分钟至30分钟，所述载台曲率调节机构3在该预设的时长内控制载台1的曲率每1分钟改变一次。
具体地，所述步骤4和步骤6中通过将阵列基板2静置于具有弧面的载台1上，再通过载台曲率调节机构3逐渐改变载台1的弧面弯曲的曲率，让阵列基板2在重力的作用下依照载台1的弧面弯曲且弯曲程度随着载台1的弧面的曲率的变化而变化，使得阵列基板2上的各膜层受到均匀的张应力或者压应力，能够有效释放阵列基板2在制备过程中各膜层之间积累的应力。
具体地，在步骤6通过使得阵列基板2旋转90度，从而使得阵列基板2上的各膜层在长边和短边方向上均受到均匀的张应力或者压应力，保证阵列基板2中各膜层之间积累的应力的释放效果。
需要说明的是，本发明的释放阵列基板的膜层应力的方法用于在所述阵列基板2的阵列制程完成之后，成盒制程开始之前对阵列基板2的膜层应力的释放。
进一步地，通过释放阵列基板2在制备过程中各膜层之间积累的应力，能够避免后续制程(如成盒制程)以及使用过程中的外部压力对阵列基板2上的器件性能产生影响，减少显示面板的显示不良，保证产品良率。
请参阅图8，本发明还提供用于实现上述方法的一种释放阵列基板的膜层应力的装置，包括：柔性的载台1以及一与所述载台1相连的载台曲率调节机构3；
所述载台曲率调节机构3用于控制所述载台1的上表面在第一弧面与第二弧面之间变化；
所述第一弧面为相对于水平面凹陷的弧面，曲率半径为预设的第一曲率半径，所述第二弧面为相对于水平面凸起的弧面，曲率半径为预设的第二曲率半径。
具体地，所述第一曲率半径和第二曲率半径均为4m至10m；所述载台1的材料为橡胶或树脂类材料。
综上所述，本发明提供一种释放阵列基板的膜层应力的方法，该方法通过将阵列基板静置于具有弧面的载台上，再通过载台曲率调节机构逐渐改变载台的弧面弯曲的曲率，让阵列基板在重力的作用下依照载台的弧面弯曲且弯曲程度随着载台的弧面的曲率的变化而变化，从而使得阵列基板上的各膜层受到均匀的张应力或者压应力，最终在外力的作用下释放阵列基板在制备过程中各膜层之间积累的应力，避免后续制程以及使用过程中的外部压力对阵列基板上的器件性能产生影响，减少显示面板的显示不良，保证产品良率。本发明还提供一种释放阵列基板的膜层应力的装置，能够有效释放阵列基板在制备过程中各膜层之间积累的应力，减少显示面板的显示不良，保证产品良率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (16)

  1. 一种释放阵列基板的膜层应力的方法，包括如下步骤：
    步骤1、提供一柔性的载台以及一与所述载台相连的载台曲率调节机构；
    步骤2、提供一阵列基板，所述阵列基板的长边的长度小于所述载台的长度和宽度；
    步骤3、通过载台曲率调节机构带动所述载台弯曲使得所述载台的上表面变形为第一弧面，将所述阵列基板放置到载台的上表面上，并且使所述阵列基板的第一中心线与所述第一弧面的中心线重合，所述第一弧面为相对于水平面凹陷的弧面，曲率半径为预设的第一曲率半径；
    步骤4、将所述阵列基板在所述载台上静置预设的时长，并且通过载台曲率调节机构在该预设的时长内逐渐改变载台弯曲的曲率，使得载台的上表面由第一弧面变化为第二弧面，所述第二弧面为相对于水平面凸起的弧面，曲率半径为预设的第二曲率半径；
    步骤5、取下所述阵列基板，通过载台曲率调节机构使得所述载台的上表面恢复为第一弧面，将所述阵列基板沿其中心点旋转90度后重新放置到所述载台的上表面上，并使所述阵列基板的第二中心线与所述第一弧面的中心线重合，所述第二中心线与所述第一中心线垂直；
    步骤6、将所述阵列基板在所述载台上继续静置预设的时长，并且通过载台曲率调节机构在该预设的时长内逐渐改变载台的曲率，使得载台的上表面由第一弧面变化为第二弧面，完成所述阵列基板的膜层应力的释放。
  2. 如权利要求1所述的释放阵列基板的膜层应力的方法，其中，所述第一曲率半径为4m至10m。
  3. 如权利要求1所述的释放阵列基板的膜层应力的方法，其中，所述第二曲率半径为4m至10m。
  4. 如权利要求1所述的释放阵列基板的膜层应力的方法，其中，预设的时长为10至30分钟。
  5. 如权利要求1所述的释放阵列基板的膜层应力的方法，其中，在所述阵列基板的阵列制程完成之后，成盒制程开始之前进行阵列基板的膜层应力的释放。
  6. 如权利要求1所述的释放阵列基板的膜层应力的方法，其中，所述载台的材料为橡胶或树脂类材料。
  7. 如权利要求1所述的释放阵列基板的膜层应力的方法，其中，所述 步骤4和步骤6中所述载台曲率调节机构在该预设的时长内控制载台的曲率每1分钟改变一次。
  8. 如权利要求1所述的释放阵列基板的膜层应力的方法，其中，所述步骤3和步骤5中所述阵列基板置于所述载台上时，所述阵列基板的中心点与所述载台的中心点重合。
  9. 一种释放阵列基板的膜层应力的装置，包括：柔性的载台以及一与所述载台相连的载台曲率调节机构；
    所述载台曲率调节机构用于控制所述载台的上表面在第一弧面与第二弧面之间变化；
    所述第一弧面为相对于水平面凹陷的弧面，曲率半径为预设的第一曲率半径，所述第二弧面为相对于水平面凸起的弧面，曲率半径为预设的第二曲率半径。
  10. 如权利要求9所述的释放阵列基板的膜层应力的装置，其中，所述第一曲率半径和第二曲率半径均为4m至10m；所述载台的材料为橡胶或树脂类材料。
  11. 一种释放阵列基板的膜层应力的方法，包括如下步骤：
    步骤1、提供一柔性的载台以及一与所述载台相连的载台曲率调节机构；
    步骤2、提供一阵列基板，所述阵列基板的长边的长度小于所述载台的长度和宽度；
    步骤3、通过载台曲率调节机构带动所述载台弯曲使得所述载台的上表面变形为第一弧面，将所述阵列基板放置到载台的上表面上，并且使所述阵列基板的第一中心线与所述第一弧面的中心线重合，所述第一弧面为相对于水平面凹陷的弧面，曲率半径为预设的第一曲率半径；
    步骤4、将所述阵列基板在所述载台上静置预设的时长，并且通过载台曲率调节机构在该预设的时长内逐渐改变载台弯曲的曲率，使得载台的上表面由第一弧面变化为第二弧面，所述第二弧面为相对于水平面凸起的弧面，曲率半径为预设的第二曲率半径；
    步骤5、取下所述阵列基板，通过载台曲率调节机构使得所述载台的上表面恢复为第一弧面，将所述阵列基板沿其中心点旋转90度后重新放置到所述载台的上表面上，并使所述阵列基板的第二中心线与所述第一弧面的中心线重合，所述第二中心线与所述第一中心线垂直；
    步骤6、将所述阵列基板在所述载台上继续静置预设的时长，并且通过载台曲率调节机构在该预设的时长内逐渐改变载台的曲率，使得载台的上表面由第一弧面变化为第二弧面，完成所述阵列基板的膜层应力的释放；
    其中，所述第一曲率半径为4m至10m；
    其中，所述第二曲率半径为4m至10m。
  12. 如权利要求11所述的释放阵列基板的膜层应力的方法，其中，预设的时长为10至30分钟。
  13. 如权利要求11所述的释放阵列基板的膜层应力的方法，其中，在所述阵列基板的阵列制程完成之后，成盒制程开始之前进行阵列基板的膜层应力的释放。
  14. 如权利要求11所述的释放阵列基板的膜层应力的方法，其中，所述载台的材料为橡胶或树脂类材料。
  15. 如权利要求11所述的释放阵列基板的膜层应力的方法，其中，所述步骤4和步骤6中所述载台曲率调节机构在该预设的时长内控制载台的曲率每1分钟改变一次。
  16. 如权利要求11所述的释放阵列基板的膜层应力的方法，其中，所述步骤3和步骤5中所述阵列基板置于所述载台上时，所述阵列基板的中心点与所述载台的中心点重合。
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US8389349B2 (en) * 2006-11-28 2013-03-05 Tiansheng ZHOU Method of manufacturing a capacitive transducer
CN104991427A (zh) * 2015-08-12 2015-10-21 京东方科技集团股份有限公司 一种曝光装置及曝光方法
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