WO2018196090A1 - Led显示面板 - Google Patents

Led显示面板 Download PDF

Info

Publication number
WO2018196090A1
WO2018196090A1 PCT/CN2017/086301 CN2017086301W WO2018196090A1 WO 2018196090 A1 WO2018196090 A1 WO 2018196090A1 CN 2017086301 W CN2017086301 W CN 2017086301W WO 2018196090 A1 WO2018196090 A1 WO 2018196090A1
Authority
WO
WIPO (PCT)
Prior art keywords
led
light
layer
quantum dot
blue
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/086301
Other languages
English (en)
French (fr)
Inventor
吕伯彦
吴元均
袁伟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US15/541,368 priority Critical patent/US10276756B2/en
Publication of WO2018196090A1 publication Critical patent/WO2018196090A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142Two-dimensional arrangements, e.g. asymmetric LED layout

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an LED display panel.
  • Micro-LED microwave Light Emitting Diode
  • DLP liquid crystal display
  • LCoS liquid crystal display
  • MEMSScanning since the micro-LED has self-luminous characteristics, no external light source is needed, and the optical system can reduce the overall system. Volume, weight, cost, while taking into account low power consumption, rapid response and other characteristics.
  • micro-LEDs as the next-generation consumer-grade LED display technology can keep the screen high in brightness while ensuring low energy consumption of the device. This is a very demanding wearable device that can reduce the battery life of the device while reducing the battery life of the main device, and improve the battery life to solve the current "mobile charging and wearable device" Dilemma.
  • micro-LED monochrome blue-light displays are very obvious, but full-color, yield, and wavelength uniformity of light are the most important problems of micro-LEDs.
  • Monochromatic micro-LED arrays can be realized by flip-chip package and driver IC bonding, while RGB arrays need to be spliced in red, green and blue, and need to embed hundreds of thousands of crystals.
  • the technical problem to be solved by the present invention is to provide an LED display panel, which can reduce the manufacturing cost, can greatly improve the production yield, and can effectively reduce the energy consumption of the display panel and improve the service life.
  • a technical solution adopted by the present invention is to provide an LED display panel, the LED display panel comprising at least a thin film transistor array layer, a quantum dot light emitting layer, and An LED array layer between the thin film transistor array layer and the quantum dot light emitting layer, the LED array layer emits light of at least two colors when the excitation light is emitted, and the LED display panel further comprises a filter layer, and the quantum dot light emitting layer is disposed. Between the LED array layer and the filter layer, the filter layer is used to filter out at least a portion of the excitation light having a wavelength of 330-480 nm.
  • an LED display panel including at least a thin film transistor array layer, a quantum dot light emitting layer, and a thin film transistor array layer and a quantum dot light emitting layer. Between the LED array layers, when the LED array layer emits excitation light, the quantum dot luminescent layer is excited to emit light of at least two colors.
  • the present invention provides at least a thin film transistor array layer, a quantum dot light emitting layer, and an LED array disposed between the thin film transistor array layer and the quantum dot light emitting layer by providing the LED display panel.
  • the layer when the excitation light is emitted through the LED array layer, excites the quantum dot luminescent layer to emit light of at least two colors, so that a single-color LED array can be disposed when the LED array is disposed, thereby avoiding reposting three different color LED dies.
  • the complicated process of the process achieves full color display by exciting the light emitting layer of the quantum dot to emit light of at least two colors, which greatly reduces the manufacturing cost, and can greatly improve the production yield of the display panel, and the high-efficiency light-emitting property of the quantum dot light-emitting layer. And photoluminescence stability, can effectively reduce the energy consumption of the display panel and improve the service life.
  • FIG. 1 is a schematic structural view of an LED display panel according to an embodiment of the present invention.
  • FIG. 2 is a schematic structural view of an LED array layer and a quantum dot light emitting layer according to an embodiment of the present invention
  • FIG. 3 is a schematic structural view of an LED array layer and a quantum dot luminescent layer according to another embodiment of the present invention.
  • FIG. 4 is a schematic structural view of an LED array layer and a quantum dot light-emitting layer according to still another embodiment of the present invention.
  • FIG. 1 is a schematic structural diagram of an LED display panel according to an embodiment of the present invention.
  • the LED display panel 10 includes at least a thin film transistor array layer 111, a quantum dot light emitting layer 122, and an LED array layer 112 disposed between the thin film transistor array layer 111 and the quantum dot light emitting layer 122.
  • the LED array layer 112 emits excitation light.
  • the quantum dot light-emitting layer 122 is excited to emit light of at least two colors.
  • the display panel further includes a driving circuit (not shown).
  • the thin film transistor array layer 111 is connected to the driving circuit, and the thin film transistor array layer 111 and the driving circuit cooperate to control the LED array layer 111 to emit light, thereby achieving different display effects.
  • the LED display panel 10 may further include a filter layer 121 disposed between the LED array layer 112 and the filter layer 121, and the filter layer 121 is configured to filter out at least a portion of the excitation light.
  • the wavelength of the excitation light may be 330-480 nm.
  • the excitation light can be blue light or ultraviolet light.
  • the excitation light excites the quantum dot luminescent layer 122 to emit light of at least two colors, and the light mixed color of at least two colors emitted by the quantum dot luminescent layer 122 realizes full color display, or the quantum dot luminescent layer 122 emits light and excitation of at least two colors. Light color mixing for full color display.
  • the quantum dot light-emitting layer 122 may include red quantum dots and green quantum dots, and red quantum dots, green quantum dots, and transparent materials in the quantum dot light-emitting layer are periodically arranged in sequence, in which case the excitation light must be For blue light.
  • the blue light excites the red quantum dot to emit red light
  • the blue light excites the green quantum dot to emit green light
  • the excited red light and green light and the blue light mixed through the transparent region realize full color display.
  • the filter layer 121 is used to filter out the blue light of the excitation light passing through the red and green quantum dots, and the blue light passing through the transparent material is not filtered out.
  • the quantum dot luminescent layer 122 may include red quantum dots, green quantum dots, and blue quantum dots. Red quantum dots, green quantum dots, and blue quantum dots are periodically arranged in sequence.
  • the excitation light can be blue light or ultraviolet light. The excitation light excites the red quantum dots to emit red light, the green quantum dots emit green light, and the blue quantum dots emit blue light, and the three kinds of light mixed colors are excited to realize full color display.
  • the filter layer 121 is used to filter out excitation light blue or ultraviolet light passing through red quantum dots, green quantum dots, blue quantum dots. See the description below for details.
  • the specific arrangement of the LED display panel 10 may be such that the LED display panel 10 includes a first substrate 11 and a second substrate 12 disposed opposite to each other, and the thin film transistor array layer 111 is disposed adjacent to the first substrate 11 On the surface of the second substrate 12, the LED array layer 112 is disposed on the thin film transistor array layer 111, and the filter layer 121 is disposed on the surface of the second substrate 12 adjacent to the first substrate 11, wherein the quantum dot light-emitting layer 122 is disposed in the filter Layer 121 or LED array layer 112.
  • the quantum dot light-emitting layer 122 is formed on the filter layer 121 by a printing process.
  • the quantum dot light-emitting layer 122 is formed by printing quantum dots (here, the quantum dots may be the aforementioned red quantum dots, blue quantum dots, or green quantum dots) on the filter layer 121 one by one.
  • the printing method can be laser printing, spray printing, or the like.
  • the quantum dot luminescent layer 122 includes a substrate and quantum dots formed on the substrate by a printing process, and the substrate is overlaid on the LED array layer 112 by a coating or surface sealing process.
  • the quantum dot light-emitting layer 122 is formed on the filter layer 121 by a bonding process.
  • FIG. 2 is a schematic structural diagram of an LED array layer and a quantum dot luminescent layer according to an embodiment of the present invention.
  • the LED array layer 112 includes a plurality of LED dies 112a, 112b, 111c.
  • the LED array layer 112 includes a plurality of LED dies 112a, 112b, 111c.
  • the LED array layer 112 includes a plurality of LED dies 112a, 112b, 111c.
  • the three quantum dot regions 122a, 122b, and 122c are periodically arranged by the quantum dot regions 122a, 122b, and 122c for the entire quantum dot light-emitting layer 122.
  • All of the LED dies 112a, 112b, 111c of the LED array layer 122 are blue LED dies 112a, 112b, 111c, the excitation light is blue light, and the quantum dot luminescent layer 122 includes a transparent material 122a, a red quantum dot 122b, and a green quantum dot 122c.
  • the blue LED dies 112b, 112c are used to emit blue light to excite the quantum dot luminescent layer 122 to emit red and green light and to mix colors with the blue light to achieve different display colors.
  • the blue LED die 112b is used to excite the red quantum dot 122b to emit red light
  • the blue LED die 112c is used to excite the green quantum dot 122b to emit green light
  • the red quantum dot 122b emits red light
  • the green quantum dot 122b emits The green light is then mixed with the blue light emitted by the blue LED die 112a through the transparent material 122a to achieve full color display.
  • the filter layer 121 is for filtering out blue light passing through the red quantum dots 122b and the green quantum dots 122b, while the blue light passing through the transparent material 122a is not filtered out.
  • FIG. 3 is a schematic structural diagram of an LED array layer and a quantum dot luminescent layer according to another embodiment of the present invention.
  • the LED array layer 112 includes a plurality of LED dies 112d, 112e, 112f, for convenience of explanation, only three cells are shown in FIG. 3, three LED dies 112d, 112e, 111f and corresponding three quantum dot regions 122d, 122e, 122f, for the entire quantum dot luminescent layer 122 The quantum dot regions 122d, 122e, and 122f are periodically arranged. All of the LED dies of the LED array layer 112 are ultraviolet LED dies, and the excitation light is ultraviolet light.
  • the quantum dot luminescent layer 122 includes a red quantum dot 122d, a green quantum dot 122e, and a blue quantum dot 122f.
  • the ultraviolet LED dies 112d, 112e, 112f are used to emit ultraviolet light to excite the quantum dot luminescent layer 122 to emit light of three colors of red, green and blue for color mixing to realize different display colors.
  • the ultraviolet LED die 112d is used to emit ultraviolet light to excite the red quantum dot 122d to emit red light
  • the ultraviolet LED die 112e is used to emit ultraviolet light to excite the green quantum dot 122e to emit green light
  • the ultraviolet LED die 112f It is used to emit ultraviolet ultraviolet light to excite blue quantum dots 122f to emit blue light, red, green and blue light for color mixing to achieve different display colors.
  • the filter layer 121 is for filtering out ultraviolet light that passes through the red quantum dots 122d, the green quantum dots 122e, and the blue quantum dots 122f.
  • FIG. 4 is a schematic structural diagram of an LED array layer and a quantum dot luminescent layer according to still another embodiment of the present invention.
  • the LED array layer 112 includes a plurality of LED dies 112g, 112h, 112i.
  • the LED array layer 112 includes a plurality of LED dies 112g, 112h, 112i.
  • the LED array layer 112 includes a plurality of LED dies 112g, 112h, 112i.
  • the plurality of LED dies include blue LED dies 112g, 112h and ultraviolet LED dies 112i.
  • the remaining LED dies are ultraviolet LED dies 112i.
  • the excitation light is ultraviolet light and blue light
  • the quantum dot light emitting layer includes a red quantum dot 122g, a green quantum dot 122h, and a blue quantum dot 122i, and the ultraviolet LED die 112i and the blue LED die 112g, 112h are respectively used to emit ultraviolet light and
  • the blue light-excited quantum dot light-emitting layer 122 emits light of three colors of red, green and blue for color mixing to realize different display colors.
  • the blue LED die 112g is used to emit blue light to excite the red quantum dot 122g to emit red light
  • the blue LED die 112h is used to emit blue light to excite the green quantum dot 122h to emit green light
  • the ultraviolet LED die 112i is used to excite blue.
  • the color quantum dots 122i emit blue light, and the excited red, green and blue colors are mixed to realize different display colors.
  • the filter layer 121 is used for filtering out the blue light-emitting diodes 112g, 112h, the blue light that is not absorbed by the quantum dots, and the ultraviolet light-emitting LED die 112i. The ultraviolet light absorbed by the sub-point.
  • the material used for the ultraviolet LED dies may be an In 1-x Ga x N (0 ⁇ x ⁇ 1) quantum well luminescent material emitting light in the wavelength range of 330 nm to 400 nm.
  • the material used for the blue LED die can be an In 1-x Ga x N (0 ⁇ x ⁇ 1) quantum well luminescent material with a wavelength range of 400 nm to 480 nm.
  • the material of the blue quantum dot may be CdSe (cadmium selenide) or perovskite, and the half width may be 30 to 40 nm.
  • the green quantum dot material and the red quantum dot material are CdSe (cadmium selenide) or perovskite or InP (indium phosphide), and have a half width of 30 to 50 nm.
  • the above-mentioned crystal grains and quantum dots may also be other materials, which is not limited in the embodiment of the present invention.
  • the invention provides at least a thin film transistor array layer, a quantum dot light emitting layer, and an LED array layer disposed between the thin film transistor array layer and the quantum dot light emitting layer, and the quantum dot light emitting layer is excited when the excitation light is emitted through the LED array layer.
  • the light of at least two colors is emitted, so that a single LED array can be set when the LED array is arranged, thereby avoiding the complicated process caused by reprinting three different color LED dies, and realizing full color display by exciting the quantum dot luminescent layer.
  • the high-efficiency light-emitting characteristics and photoluminescence stability of the quantum dot light-emitting layer can effectively reduce the energy consumption of the display panel and improve the service life.

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Device Packages (AREA)

Abstract

一种LED显示面板,其至少包括薄膜晶体管阵列层(111)、量子点发光层(122)以及设置在薄膜晶体管阵列层(111)和量子点发光层(122)之间的LED阵列层(112),LED阵列层(112)发出激发光时激发量子点发光层(122)发出至少两种颜色的光。该显示面板能够降低制作成本,提高制作良率,有效降低显示面板能耗并提高使用寿命。

Description

LED显示面板 【技术领域】
本发明涉及显示技术领域,特别是涉及一种LED显示面板。
【背景技术】
micro-LED(micro Light Emitting Diode,微型发光二极管)技术是指在一个芯片上集成高密度微小尺寸的LED阵列,如同LED显示屏,并且每一个像素单元可定址、单独驱动点亮,即可以视为户外LED显示屏的缩小版。当LED像素点距离从毫米级降低至微米级,相比于现有的微显示技术DLP、LCoS、MEMSScanning,由于micro-LED具有自发光特性,不需外加光源,光学系统简单可以减少整体系统的体积、重量、成本,同时兼顾低功耗、快速反应等特性。相对于LCD&AMOLED显示屏幕高功耗特性,micro-LED作为下一代消费级的LED显示技术,可以使得屏幕在保持高亮度的同时,又能保证设备的低能耗。这对体积要求非常苛刻的可穿戴设备而言,在保证设备电池体积的同时,可以通过有效降低最主要的屏幕能耗,提高电池续航时间,以解决目前移动和可穿戴设备“一天一充”的窘境。
目前micro-LED单色蓝光显示器亮度和寿命表现优势非常明显,但是全彩化、良率、发光波长一致性是micro-LED目前最主要的问题。单色micro-LED阵列可以通过倒装结构封装和驱动IC贴合就能实现,而RGB阵列需要分次转贴红、绿、蓝三色晶粒,需要嵌入几十万颗晶粒,对于LED晶粒发光效率、发光波长的一致性、良率要求更高,相应成本支出更高。
【发明内容】
本发明主要解决的技术问题是提供一种LED显示面板,能够降低制作成本,并可以大幅提高制作良率,可有效降低显示面板能耗并提高使用寿命。
为解决上述技术问题,本发明采用的一个技术方案是:提供一种LED显示面板,该LED显示面板至少包括薄膜晶体管阵列层、量子点发光层以及设置在 薄膜晶体管阵列层和量子点发光层之间的LED阵列层,LED阵列层发出激发光时激发量子点发光层发出至少两种颜色的光,LED显示面板还包括滤光层,量子点发光层设置在LED阵列层和滤光层之间,滤光层用于滤除至少部分的激发光,激发光的波长为330-480nm。
为解决上述技术问题,本发明采用的另一个技术方案是:提供一种LED显示面板,该LED显示面板至少包括薄膜晶体管阵列层、量子点发光层以及设置在薄膜晶体管阵列层和量子点发光层之间的LED阵列层,LED阵列层发出激发光时激发量子点发光层发出至少两种颜色的光。
本发明的有益效果是:区别于现有技术的情况,本发明通过设置LED显示面板至少包括薄膜晶体管阵列层、量子点发光层以及设置在薄膜晶体管阵列层和量子点发光层之间的LED阵列层,通过LED阵列层发出激发光时激发量子点发光层发出至少两种颜色的光,使得在设置LED阵列时可以设置单色的LED阵列,避免了转帖三种不同颜色的LED晶粒导致的工序复杂问题,通过激发量子点发光层发出至少两种颜色的光来实现全彩显示,大大降低了制作成本,并可以大幅提高显示面板的制作良率,而量子点发光层的高效发光特性及光致发光稳定性,可有效降低显示面板的能耗并提高使用寿命。
【附图说明】
图1是本发明实施例的LED显示面板的结构示意图;
图2是本发明一种实施例的LED阵列层和量子点发光层的结构示意图;
图3是本发明另一种实施例的LED阵列层和量子点发光层的结构示意图;
图4是本发明又一种实施例的LED阵列层和量子点发光层的结构示意图。
【具体实施方式】
下面结合附图和实施例对本发明进行详细的说明。
请参阅图1,图1是本发明实施例的LED显示面板的结构示意图。在本实 施例中,LED显示面板10至少包括薄膜晶体管阵列层111、量子点发光层122以及设置在薄膜晶体管阵列层111和量子点发光层122之间的LED阵列层112,LED阵列层112发出激发光时激发量子点发光层122发出至少两种颜色的光。
显示面板还包括驱动电路(图未示),薄膜晶体管阵列层111连接驱动电路,薄膜晶体管阵列层111与驱动电路配合控制LED阵列层111发光,实现不同的显示效果。
LED显示面板10还可以包括滤光层121,量子点发光层122设置在LED阵列层112和滤光层121之间,滤光层121用于滤除至少部分的激发光。
例如,激发光的波长可以为330-480nm。激发光可以为蓝光或者紫外光。激发光激发量子点发光层122发出至少两种颜色的光,量子点发光层122发出的至少两种颜色的光混色实现全彩显示,或者量子点发光层122发出至少两种颜色的光和激发光混色实现全彩显示。
例如,一种情况下,量子点发光层122可以包括红色量子点和绿色量子点,量子点发光层中红色量子点、绿色量子点、透明材料依次周期性排列,在这种情况下激发光必须为蓝光。蓝光激发红色量子点发红光、蓝光激发绿色量子点发绿光,激发出的红光和绿光与穿过透明区域的蓝光混色实现全彩显示。滤光层121用于滤除穿过红色和绿色量子点的激发光蓝光,穿过透明材料的蓝光不被滤除。
在另一种情况下,量子点发光层122可以包括红色量子点、绿色量子点、蓝色量子点。红色量子点、绿色量子点、蓝色量子点依次周期性排列。激发光可以为蓝光或者紫外光。激发光激发红色量子点发红光、激发绿色量子点发绿光、蓝色量子点发蓝光,激发出的三种光混色实现全彩显示。滤光层121用于滤除穿过红色量子点、绿色量子点、蓝色量子点的激发光蓝光或者紫外光。具体请参见下文的描述。
LED显示面板10的具体设置方式可以为:LED显示面板10包括相对设置的第一基板11和第二基板12,薄膜晶体管阵列层111设置在第一基板11靠近 第二基板12的表面上,LED阵列层112设置在薄膜晶体管阵列层111上,滤光层121设置在第二基板12靠近第一基板11的表面上,其中量子点发光层122设置在滤光层121或者LED阵列层112上。
在一种情况下,量子点发光层122通过打印工艺形成在滤光层121上。通过将量子点(这里的量子点可以是前述的红色量子点、蓝色量子点或者绿色量子点)逐个打印在滤光层121上形成量子点发光层122。打印的方式可以为激光式打印、喷涂式打印等。
在另一种情况下,量子点发光层122包括衬底和通过打印工艺形成在衬底上的量子点,衬底通过涂覆或者面密封工艺覆盖在LED阵列层112上。
在又一种情况下,量子点发光层122通过贴合的工艺形成在滤光层121上。
请参阅图2,图2是本发明一种实施例的LED阵列层和量子点发光层的结构示意图。在一种实施例中,LED阵列层112包括多个LED晶粒112a、112b、111c,为了方便说明,图2中仅示出三个单元,三个LED晶粒112a、112b、111c以及对应的三个量子点区域122a、122b、122c,对于整个量子点发光层122来说是由量子点区域122a、122b、122c周期性排列形成。LED阵列层122的全部LED晶粒112a、112b、111c均为蓝光LED晶粒112a、112b、111c,激发光为蓝光,量子点发光层122包括透明材料122a、红色量子点122b和绿色量子点122c,蓝光LED晶粒112b、112c用于发出蓝光激发量子点发光层122发出红绿两种颜色的光并与蓝光进行混色实现不同的显示颜色。具体而言,蓝光LED晶粒112b用于激发红色量子点122b发红光,蓝光LED晶粒112c用于激发绿色量子点122b发绿光,红色量子点122b发出的红光、绿色量子点122b发出的绿光再与蓝光LED晶粒112a发出的穿过透明材料122a的蓝光混光实现全彩显示。滤光层121用于滤除穿过红色量子点122b和绿色量子点122b的蓝光,而穿过透明材料122a的蓝光不被滤除。
请参阅图3,图3是本发明另一种实施例的LED阵列层和量子点发光层的结构示意图。在另一种实施例中,LED阵列层112包括多个LED晶粒112d、112e、 112f,为了方便说明,图3中仅示出三个单元,三个LED晶粒112d、112e、111f以及对应的三个量子点区域122d、122e、122f,对于整个量子点发光层122来说是由量子点区域122d、122e、122f周期性排列形成。LED阵列层112的全部LED晶粒均为紫外光LED晶粒,激发光为紫外光,量子点发光层122包括红色量子点122d、绿色量子点122e以及蓝色量子点122f,紫外光LED晶粒112d、112e、112f用于发出紫外光激发量子点发光层122发出红绿蓝三种颜色的光进行混色实现不同的显示颜色。具体而言,紫外光LED晶粒112d用于发出紫外光激发红色量子点122d发红光,紫外光LED晶粒112e用于发出紫外光激发绿色量子点122e发绿光,紫外光LED晶粒112f用于发出紫外紫外光激发蓝色量子点122f发蓝光,红绿蓝三种颜色的光进行混色实现不同的显示颜色。滤光层121用于滤除穿过红色量子点122d、绿色量子点122e、蓝色量子点122f的紫外光。
请参阅图4,图4是本发明又一种实施例的LED阵列层和量子点发光层的结构示意图。在又一种实施例中,LED阵列层112包括多个LED晶粒112g、112h、112i,为了方便说明,图3中仅示出三个单元,三个LED晶粒112g、112h、111i以及对应的三个量子点区域122g、122h、122i,对于整个量子点发光层122来说是由量子点区域122g、122h、122i周期性排列形成。多个LED晶粒包括蓝光LED晶粒112g、112h和紫外光LED晶粒112i,LED阵列112中除了蓝光LED晶粒112g、112h,其余的LED晶粒均为紫外光LED晶粒112i。激发光为紫外光和蓝光,量子点发光层包括红色量子点122g、绿色量子点122h以及蓝色量子点122i,紫外光LED晶粒112i和蓝光LED晶粒112g、112h分别用于发出紫外光和蓝光激发量子点发光层122发出红绿蓝三种颜色的光进行混色实现不同的显示颜色。具体而言,蓝光LED晶粒112g用于发出蓝光激发红色量子点122g发红光,蓝光LED晶粒112h用于发蓝光激发绿色量子点122h发绿光,紫外光LED晶粒112i用于激发蓝色量子点122i发蓝光,被激发出的红绿蓝进行混色实现不同的显示颜色。滤光层121用于滤除蓝光LED晶粒112g、112h发出的穿过量子点未被量子点吸收的蓝光和紫外光LED晶粒112i发出的穿过量子点未被量 子点吸收的紫外光。
紫外光LED晶粒所使用的材料可为In1-xGaxN(0<x≤1)量子阱发光材料,发出的光波长范围330nm-400nm。
蓝光LED晶粒所使用的材料可为In1-xGaxN(0<x≤1)量子阱发光材料,波长范围400nm~480nm。
蓝色量子点的材料可为CdSe(硒化镉)或钙钛矿,半峰宽可以为30~40nm。
绿色量子点材料和红色量子点材料为CdSe(硒化镉)或钙钛矿或InP(磷化铟),半峰宽30~50nm。
在其他实施例中,上述的晶粒和量子点也可以采用其他物质,本发明实施例对此不做限定。
本发明通过设置LED显示面板至少包括薄膜晶体管阵列层、量子点发光层以及设置在薄膜晶体管阵列层和量子点发光层之间的LED阵列层,通过LED阵列层发出激发光时激发量子点发光层发出至少两种颜色的光,使得在设置LED阵列时可以设置单色的LED阵列,避免了转帖三种不同颜色的LED晶粒导致的工序复杂问题,通过激发量子点发光层实现全彩显示,大大降低了制作成本,并可以大幅提高显示面板的制作良率,而量子点发光层的高效发光特性及光致发光稳定性,可有效降低显示面板的能耗并提高使用寿命
以上所述仅为本发明的实施方式,并非因此限制本发明的专利范围,凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本发明的专利保护范围内。

Claims (18)

  1. 一种LED显示面板,其中,所述LED显示面板至少包括薄膜晶体管阵列层、量子点发光层以及设置在所述薄膜晶体管阵列层和所述量子点发光层之间的LED阵列层,所述LED阵列层发出激发光时激发所述量子点发光层发出至少两种颜色的光,所述LED显示面板还包括滤光层,所述量子点发光层设置在所述LED阵列层和所述滤光层之间,所述滤光层用于滤除至少部分的所述激发光,所述激发光的波长为330-480nm。
  2. 根据权利要求1所述的LED显示面板,其中,所述LED显示面板包括相对设置的第一基板和第二基板,所述薄膜晶体管阵列层设置在所述第一基板靠近所述第二基板的表面上,所述LED阵列层设置在所述薄膜晶体管阵列层上,所述滤光层设置在所述第二基板靠近第一基板的表面上,其中所述量子点发光层设置在所述滤光层或者所述LED阵列层上。
  3. 根据权利要求1所述的LED显示面板,其中,所述LED阵列层包括多个LED晶粒,所述LED阵列层的全部LED晶粒均为蓝光LED晶粒,所述激发光为蓝光,所述量子点发光层包括红色量子点和绿色量子点,所述蓝光LED晶粒用于发出蓝光激发所述量子点发光层发出红绿两种颜色的光并与所述蓝光进行混色实现不同的显示颜色。
  4. 根据权利要求1所述的LED显示面板,其中,所述LED阵列层包括多个LED晶粒,所述LED阵列层的全部LED晶粒均为紫外光LED晶粒,所述激发光为紫外光,所述量子点发光层包括红色量子点、绿色量子点以及蓝色量子点,所述紫外光LED晶粒用于发出紫外光激发所述量子点发光层发出红绿蓝三种颜色的光进行混色实现不同的显示颜色。
  5. 根据权利要求1所述的LED显示面板,其中,所述LED阵列层包括多个LED晶粒,所述多个LED晶粒包括蓝光LED晶粒和紫外光LED晶粒,所述激发光为紫外光和蓝光,所述量子点发光层包括红色量子点、绿色量子点以及蓝色量子点,所述紫外光LED晶粒和所述蓝光LED晶粒分别用于发出紫外光和 蓝光激发所述量子点发光层发出红绿蓝三种颜色的光进行混色实现不同的显示颜色
  6. 根据权利要求2所述的LED显示面板,其中,所述量子点发光层通过打印工艺形成在所述滤光层上。
  7. 根据权利要求2所述的LED显示面板,其中,所述量子点发光层包括衬底和通过打印工艺形成在所述衬底上的量子点,所述衬底通过涂覆或者面密封工艺覆盖在所述LED阵列层上。
  8. 根据权利要求2所述的LED显示面板,其中,所述量子点发光层通过贴合的工艺形成在所述滤光层上。
  9. 一种LED显示面板,其中,所述LED显示面板至少包括薄膜晶体管阵列层、量子点发光层以及设置在所述薄膜晶体管阵列层和所述量子点发光层之间的LED阵列层,所述LED阵列层发出激发光时激发所述量子点发光层发出至少两种颜色的光。
  10. 根据权利要求9所述的LED显示面板,其中,所述LED显示面板还包括滤光层,所述量子点发光层设置在所述LED阵列层和所述滤光层之间,所述滤光层用于滤除至少部分的所述激发光。
  11. 根据权利要求10所述的LED显示面板,其中,所述LED显示面板包括相对设置的第一基板和第二基板,所述薄膜晶体管阵列层设置在所述第一基板靠近所述第二基板的表面上,所述LED阵列层设置在所述薄膜晶体管阵列层上,所述滤光层设置在所述第二基板靠近第一基板的表面上,其中所述量子点发光层设置在所述滤光层或者所述LED阵列层上。
  12. 根据权利要求9所述的LED显示面板,其中,所述激发光的波长为330-480nm。
  13. 根据权利要求9所述的LED显示面板,其中,所述LED阵列层包括多个LED晶粒,所述LED阵列层的全部LED晶粒均为蓝光LED晶粒,所述激发光为蓝光,所述量子点发光层包括红色量子点和绿色量子点,所述蓝光LED 晶粒用于发出蓝光激发所述量子点发光层发出红绿两种颜色的光并与所述蓝光进行混色实现不同的显示颜色。
  14. 根据权利要求9所述的LED显示面板,其中,所述LED阵列层包括多个LED晶粒,所述LED阵列层的全部LED晶粒均为紫外光LED晶粒,所述激发光为紫外光,所述量子点发光层包括红色量子点、绿色量子点以及蓝色量子点,所述紫外光LED晶粒用于发出紫外光激发所述量子点发光层发出红绿蓝三种颜色的光进行混色实现不同的显示颜色。
  15. 根据权利要求9所述的LED显示面板,其中,所述LED阵列层包括多个LED晶粒,所述多个LED晶粒包括蓝光LED晶粒和紫外光LED晶粒,所述激发光为紫外光和蓝光,所述量子点发光层包括红色量子点、绿色量子点以及蓝色量子点,所述紫外光LED晶粒和所述蓝光LED晶粒分别用于发出紫外光和蓝光激发所述量子点发光层发出红绿蓝三种颜色的光进行混色实现不同的显示颜色
  16. 根据权利要求11所述的LED显示面板,其中,所述量子点发光层通过打印工艺形成在所述滤光层上。
  17. 根据权利要求11所述的LED显示面板,其中,所述量子点发光层包括衬底和通过打印工艺形成在所述衬底上的量子点,所述衬底通过涂覆或者面密封工艺覆盖在所述LED阵列层上。
  18. 根据权利要求11所述的LED显示面板,其中,所述量子点发光层通过贴合的工艺形成在所述滤光层上。
PCT/CN2017/086301 2017-04-28 2017-05-27 Led显示面板 Ceased WO2018196090A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/541,368 US10276756B2 (en) 2017-04-28 2017-05-27 LED display panel

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710295385.2A CN106898628B (zh) 2017-04-28 2017-04-28 Led显示面板
CN201710295385.2 2017-04-28

Publications (1)

Publication Number Publication Date
WO2018196090A1 true WO2018196090A1 (zh) 2018-11-01

Family

ID=59197719

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/086301 Ceased WO2018196090A1 (zh) 2017-04-28 2017-05-27 Led显示面板

Country Status (2)

Country Link
CN (1) CN106898628B (zh)
WO (1) WO2018196090A1 (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109216329B (zh) * 2017-07-07 2020-09-08 鸿富锦精密工业(深圳)有限公司 微型led显示面板及其制备方法
CN108182884A (zh) * 2017-12-29 2018-06-19 重庆锐虎光电科技有限公司 能够与移动终端交互的led电子显示终端
CN108281524A (zh) * 2018-01-23 2018-07-13 苏州市悠文电子有限公司 一种全彩柔性rgb面板及其制作方法
CN110556054A (zh) * 2018-05-31 2019-12-10 青岛海信电器股份有限公司 柔性Micro LED显示装置
CN108899332A (zh) * 2018-07-17 2018-11-27 南方科技大学 一种Micro-LED显示面板及其制造方法
US10692941B2 (en) 2018-07-20 2020-06-23 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Organic light emitting diode display
CN108922906A (zh) * 2018-07-20 2018-11-30 深圳市华星光电半导体显示技术有限公司 Oled显示器
CN108766273A (zh) * 2018-08-15 2018-11-06 南方科技大学 一种微型发光二极管显示面板及显示装置
CN110838497B (zh) * 2018-08-17 2022-12-09 鸿富锦精密工业(深圳)有限公司 微型发光二极管显示面板及其制作方法
CN109410775A (zh) * 2018-10-24 2019-03-01 京东方科技集团股份有限公司 一种微led显示面板、其制作方法及显示装置
CN110137166A (zh) * 2019-05-06 2019-08-16 深圳市晶台股份有限公司 一种基于喷墨技术的led滤光层构成方法
CN112270893A (zh) * 2020-09-09 2021-01-26 深圳市奥拓电子股份有限公司 一种紫外led激发荧光显示方法、装置和系统
CN115691351A (zh) * 2021-12-10 2023-02-03 广东聚华印刷显示技术有限公司 显示面板及其制作方法
CN114300589B (zh) * 2021-12-30 2023-10-13 深圳市思坦科技有限公司 一种全彩Micro-LED及其制备方法和显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140367711A1 (en) * 2013-06-18 2014-12-18 LuxVue Technology Corporation Led light pipe
CN105324858A (zh) * 2013-06-17 2016-02-10 勒克斯维科技公司 用于集成光发射设备的反射堤结构和方法
CN106356386A (zh) * 2016-09-30 2017-01-25 福州大学 一种基于Micro‑LED阵列背光源的喷墨打印量子点显示装置
CN205910483U (zh) * 2016-08-04 2017-01-25 青岛蓝之虹光电技术有限公司 应用波长转换原理的新型直下式背光光源装置
CN206022367U (zh) * 2016-08-22 2017-03-15 欣兴电子股份有限公司 发光二极管显示器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI574055B (zh) * 2013-08-14 2017-03-11 鴻海精密工業股份有限公司 顯示面板
CN104536198A (zh) * 2015-02-03 2015-04-22 京东方科技集团股份有限公司 一种显示基板、显示面板和显示装置
CN105097879A (zh) * 2015-07-22 2015-11-25 深圳市华星光电技术有限公司 一种显示面板
CN106098720A (zh) * 2016-06-20 2016-11-09 深圳市华星光电技术有限公司 微发光二极管显示器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105324858A (zh) * 2013-06-17 2016-02-10 勒克斯维科技公司 用于集成光发射设备的反射堤结构和方法
US20140367711A1 (en) * 2013-06-18 2014-12-18 LuxVue Technology Corporation Led light pipe
CN205910483U (zh) * 2016-08-04 2017-01-25 青岛蓝之虹光电技术有限公司 应用波长转换原理的新型直下式背光光源装置
CN206022367U (zh) * 2016-08-22 2017-03-15 欣兴电子股份有限公司 发光二极管显示器
CN106356386A (zh) * 2016-09-30 2017-01-25 福州大学 一种基于Micro‑LED阵列背光源的喷墨打印量子点显示装置

Also Published As

Publication number Publication date
CN106898628B (zh) 2019-08-02
CN106898628A (zh) 2017-06-27

Similar Documents

Publication Publication Date Title
WO2018196090A1 (zh) Led显示面板
CN104465911B (zh) 量子点发光装置及显示设备
CN109219886B (zh) 显示装置及其制造方法
TWI726611B (zh) 背光模組、顯示裝置及其驅動方法
JP2019529989A (ja) ディスプレイ装置
US20150318506A1 (en) Organic light emitting diode display apparatus
WO2017012133A1 (zh) 一种显示面板
CN1954436A (zh) 具有提高性能的彩色oled器件
TW201506459A (zh) 顯示面板
KR20060125347A (ko) 자발광 lcd
JP2010170044A (ja) カラー表示装置
WO2014180053A1 (zh) 显示装置的背光模组以及白光led
TW201624688A (zh) 顯示面板
KR20140042274A (ko) 디스플레이패널 및 그 장치
JP2006308858A (ja) 表示装置
CN108681153B (zh) 一种显示装置及其驱动方法
US10276756B2 (en) LED display panel
JP4557289B2 (ja) 表示装置
JP2012032453A (ja) 発光装置の駆動方法
US10394078B2 (en) Color film substrate, array substrate, display device, and method for controlling the display device
CN113888991B (zh) 一种发光面板、显示面板、背光模组和显示装置
US9223174B2 (en) Liquid crystal display device including light sources emitting different colors
CN101256304A (zh) 具有高色彩饱和度的显示器模块
CN110716345A (zh) 芯片安装基板、显示装置以及芯片安装基板的制造方法
CN106094339B (zh) 显示面板和显示装置

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 15541368

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17907760

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17907760

Country of ref document: EP

Kind code of ref document: A1