WO2018194156A1 - Semiconductor device, and method for manufacturing same - Google Patents

Semiconductor device, and method for manufacturing same Download PDF

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Publication number
WO2018194156A1
WO2018194156A1 PCT/JP2018/016280 JP2018016280W WO2018194156A1 WO 2018194156 A1 WO2018194156 A1 WO 2018194156A1 JP 2018016280 W JP2018016280 W JP 2018016280W WO 2018194156 A1 WO2018194156 A1 WO 2018194156A1
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WO
WIPO (PCT)
Prior art keywords
adhesive
semiconductor
connection
semiconductor chip
connection part
Prior art date
Application number
PCT/JP2018/016280
Other languages
French (fr)
Japanese (ja)
Inventor
一尊 本田
慎 佐藤
恵子 上野
裕太 小関
Original Assignee
日立化成株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立化成株式会社 filed Critical 日立化成株式会社
Priority to KR1020197030649A priority Critical patent/KR20190142333A/en
Priority to KR1020237030762A priority patent/KR20230133407A/en
Priority to CN201880025917.3A priority patent/CN110582840A/en
Priority to JP2019513700A priority patent/JPWO2018194156A1/en
Publication of WO2018194156A1 publication Critical patent/WO2018194156A1/en
Priority to JP2023215945A priority patent/JP2024023787A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector

Definitions

  • the present invention relates to a semiconductor device and a manufacturing method thereof.
  • FC connection method in which conductive protrusions called bumps are formed on a semiconductor chip or a substrate and the semiconductor chip and the substrate are directly connected.
  • Flip chip connection methods include soldering, tin, gold, silver, copper, etc., joining the metal to the joint, applying ultrasonic vibration to the metal, joining the joint, and mechanically using the shrinkage of the resin.
  • a method for maintaining contact is known. From the viewpoint of the reliability of the connection part, a method of metal-joining the connection part using solder, tin, gold, silver, copper or the like is common.
  • COB Chip On Board
  • BGA Bit Grid Array
  • CSP Chip Size Package
  • FC connection method is also widely used in a COC (Chip On Chip) type connection method in which bumps or wirings are formed on semiconductor chips and the semiconductor chips are connected to each other.
  • COC Chip On Chip
  • packages such as a chip stack package, a POP (Package On Package), and a TSV (Through-Silicon Via) having the above-described connection method in multiple stages are beginning to be widely used. Since these technologies can reduce the package by arranging the semiconductor chips in a three-dimensional manner rather than in a planar shape, it is possible to pursue further miniaturization, thinning, and high functionality of the semiconductor device.
  • COW Chip On Wafer
  • WOW Wafer On Wafer
  • a gang bonding method in which a plurality of chips are positioned and temporarily bonded to a wafer or a map substrate and a plurality of chips are collectively bonded to ensure connection is also attracting attention from the viewpoint of improving productivity.
  • a semiconductor chip supplied with a semiconductor chip or a semiconductor adhesive is picked up from a diced wafer with a collet and supplied to a crimping tool through the collet.
  • chip-chip or chip-substrate alignment is performed and these are crimped.
  • the temperature of the crimping tool is increased so that the metal in either or both connections reaches a melting point or higher so that a metal bond is formed.
  • the crimping tool that has become high temperature is cooled, and then the semiconductor chip is picked up again by the crimping tool.
  • the crimping tool picks up the semiconductor chip by adsorbing the opposite surface of the semiconductor chip to which the semiconductor adhesive is supplied (the surface to be connected). In this case, it is necessary to cool the crimping tool from a high temperature at which the metal of the connection portion melts to a low temperature at which the semiconductor chip supplied with the semiconductor adhesive can be picked up.
  • the crimping tool immediately after the crimping is at a high temperature (for example, 240 ° C. or more for solder). If the semiconductor chip is picked up from the collet without cooling the high-temperature crimping tool, the heat of the crimping tool is transferred to the collet, the temperature of the collet itself rises, causing a problem, and the productivity is lowered.
  • a high temperature for example, 240 ° C. or more for solder
  • an object of one aspect of the present invention is to provide a method for manufacturing a semiconductor device that can achieve both suppression of voids and securing of connection.
  • One aspect of the present invention is to solve the above-described problem, and a first member having a connection portion and a second member having a connection portion are connected to each other through an adhesive.
  • the temporary press-bonded body in which the connection portion of the first member and the connection portion of the second member are arranged to face each other by temporary press-bonding at a temperature lower than the melting point of the connection portion and the melting point of the connection portion of the second member.
  • heating the pressure-bonded body to a temperature equal to or higher than the melting point of at least one of the connection portion of the first member or the connection portion of the second member while pressurizing the pressure-bonded body by atmospheric pressure, thereby being arranged to face each other.
  • a step of joining the connection portions so as to be electrically connected to each other.
  • the first member is a semiconductor chip or a semiconductor wafer
  • the second member is a printed circuit board, a semiconductor chip or a semiconductor wafer.
  • the adhesive may contain a thermosetting resin having a weight average molecular weight of less than 10,000 and its curing agent.
  • the adhesive may further contain a polymer component having a weight average molecular weight of 10,000 or more.
  • the weight average molecular weight of the polymer component may be 30000 or more.
  • the glass transition temperature of the polymer component may be 100 ° C. or lower.
  • the adhesive may be a film adhesive.
  • a semiconductor device manufacturing method capable of achieving both suppression of voids and securing of connection.
  • the method of the present invention is also excellent in that a large number of highly reliable semiconductor devices can be manufactured in a short time.
  • semiconductor device 1 1, 2, and 3 are cross-sectional views each showing an embodiment of a semiconductor device that can be manufactured by a method according to an embodiment described later.
  • FIG. 1 is a schematic cross-sectional view showing a COB type connection mode between a semiconductor chip and a substrate.
  • a semiconductor device 100 shown in FIG. 1A includes a semiconductor chip 1 and a substrate 2 (wiring circuit board), and an adhesive layer 40 interposed therebetween.
  • the semiconductor chip 1 includes a semiconductor chip body 10, wiring 15 disposed on the surface of the semiconductor chip body 10 on the substrate 2 side, and bumps 30 as connection portions disposed on the wiring 15.
  • the substrate 2 includes a substrate body 20 and wirings 16 as connection portions disposed on the surface of the substrate body 20 on the semiconductor chip 1 side.
  • the bump 30 of the semiconductor chip 1 and the wiring 16 of the substrate 2 are electrically connected by metal bonding.
  • the semiconductor chip 1 and the substrate 2 are flip-chip connected by wirings 16 and bumps 30.
  • the wirings 15 and 16 and the bumps 30 are sealed from the external environment by being sealed with the adhesive layer 40.
  • the semiconductor chip 1 includes a semiconductor chip 1, a substrate 2, and an adhesive layer 40 interposed therebetween.
  • the semiconductor chip 1 has bumps 32 arranged on the surface of the semiconductor chip 1 on the substrate 2 side as a connection portion.
  • the substrate 2 has bumps 33 arranged on the surface of the substrate body 20 on the semiconductor chip 1 side as a connection portion.
  • the bumps 32 of the semiconductor chip 1 and the bumps 33 of the substrate 2 are electrically connected by metal bonding.
  • the semiconductor chip 1 and the substrate 2 are flip-chip connected by bumps 32 and 33.
  • the bumps 32 and 33 are sealed from the external environment by being sealed with the adhesive layer 40.
  • FIG. 2 shows a COC type connection mode between semiconductor chips.
  • the configuration of the semiconductor device 300 shown in FIG. 2A is the same as that of the semiconductor device 100 except that the two semiconductor chips 1 are flip-chip connected via the wiring 15 and the bump 30.
  • the configuration of the semiconductor device 400 shown in FIG. 2B is the same as that of the semiconductor device 200 except that the two semiconductor chips 1 are flip-chip connected via the bumps 32.
  • connecting portions such as the wiring 15 and the bump 32 may be a metal film called a pad (for example, gold plating) or a post electrode (for example, a copper pillar).
  • a pad for example, gold plating
  • a post electrode for example, a copper pillar
  • one semiconductor chip has a copper pillar and a connection bump (solder: tin-silver) as a connection portion
  • the other semiconductor chip has a gold plating as a connection portion. If the part reaches a temperature equal to or higher than the melting point of the solder with the lowest melting point among the metal materials of the connection part, the solder melts and a metal bond is formed between the connection parts, and electrical connection between the connection parts is possible Become.
  • the semiconductor chip body 10 is not particularly limited, and various semiconductors such as elemental semiconductors composed of the same kind of elements such as silicon and germanium, and compound semiconductors such as gallium arsenide and indium phosphide can be used.
  • the substrate 2 is not particularly limited as long as it is a printed circuit board, and does not require a metal layer formed on the surface of an insulating substrate mainly composed of glass epoxy, polyimide, polyester, ceramic, epoxy, bismaleimide triazine, or the like.
  • a circuit board on which wiring (wiring pattern) is formed by printing can be used.
  • the main components are gold, silver, copper, and solder (the main components are, for example, tin-silver, tin-lead, tin-bismuth). , Tin-copper, tin-silver-copper), tin, nickel or the like, and may be composed of a single component or a plurality of components.
  • the connecting portion may have a structure in which these metals are laminated. Of the metal materials, copper and solder are preferable because they are relatively inexpensive. From the viewpoint of improving connection reliability and suppressing warpage, the connecting portion may contain solder.
  • the main components are gold, silver, copper, solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, tin-silver-copper), tin, nickel Etc.
  • main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, tin-silver-copper), tin, nickel Etc.
  • the pad may have a structure in which these metals are laminated. From the viewpoint of connection reliability, the pad may contain gold or solder.
  • a metal layer as a component may be formed. This metal layer may be composed of only a single component or may be composed of a plurality of components. The metal layer may have a structure in which a plurality of metal layers are stacked. The metal layer may include relatively inexpensive copper or solder. From the viewpoint of improving connection reliability and suppressing warpage, the metal layer may contain solder.
  • a semiconductor device (package) as shown in FIG. 1 or FIG. 2 is laminated and gold, silver, copper, solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, tin) -Silver-copper), tin, nickel, etc. may be used for electrical connection.
  • the metal for connection may be relatively inexpensive copper or solder.
  • an adhesive layer may be flip-chip connected or stacked between semiconductor chips to form a hole penetrating the semiconductor chip and connected to the electrode on the pattern surface.
  • FIG. 3 is a cross-sectional view showing another embodiment of the semiconductor device (semiconductor chip stacked type (TSV)).
  • TSV semiconductor chip stacked type
  • the wiring 15 formed on the interposer body 50 as a substrate is connected to the bumps 30 of the semiconductor chip 1, so that the semiconductor chip 1 and the interposer 5 are flip-chip connected. ing.
  • An adhesive layer 40 is interposed between the semiconductor chip 1 and the interposer 5.
  • the semiconductor chip 1 is repeatedly laminated via the wiring 15, the bumps 30 and the adhesive layer 40.
  • the wirings 15 on the pattern surface on the front and back sides of the semiconductor chip 1 are connected to each other by through electrodes 34 filled in holes that penetrate the inside of the semiconductor chip body 10.
  • the through electrode 34 copper, aluminum, or the like can be used.
  • the adhesive layer can be applied as a sealing material between the semiconductor chips 1 facing each other and between the semiconductor chip 1 and the interposer 5.
  • a first member having a connection part and a second member having a connection part are bonded to the melting point of the connection part of the first member and the second member via an adhesive.
  • Step) and the temporary press-bonded body are heated to a temperature equal to or higher than the melting point of the opposingly disposed connecting portions while being pressurized by atmospheric pressure, thereby joining the opposingly disposed connecting portions so as to be electrically connected to each other.
  • a second step main pressure bonding step.
  • the first member is a semiconductor chip or a semiconductor wafer
  • the second member is a printed circuit board, a semiconductor chip or a semiconductor wafer.
  • a semiconductor chip separated on a dicing tape is picked up and adsorbed by a crimping tool (crimping head) of a crimping machine, and temporarily crimped to a printed circuit board, another semiconductor chip or a semiconductor wafer.
  • crimping tool crimping head
  • the semiconductor wafer may be temporarily bonded to another semiconductor wafer.
  • a film adhesive Prior to pre-bonding, for example, a film adhesive is stuck on a semiconductor chip or a semiconductor wafer as the first member. Affixing can be performed by a hot press, roll lamination, vacuum lamination, or the like. The area and thickness of the film adhesive to be affixed are appropriately set depending on the size of the semiconductor chip or substrate, the height of the connection part (bump), and the like. A film adhesive may be affixed to the semiconductor chip, or after dicing the semiconductor wafer having the film adhesive affixed thereto, it may be separated into semiconductor chips.
  • a crimping machine such as a flip chip bonder is used.
  • the crimping tool When the crimping tool picks up the semiconductor chip for temporary crimping, the crimping tool is preferably at a low temperature so that heat is not transferred to the semiconductor adhesive or the like on the semiconductor chip. On the other hand, it is preferable that the semiconductor chip is heated to a high temperature so that the fluidity of the adhesive can be increased and the entrained voids can be efficiently eliminated during temporary bonding. However, heating at a temperature lower than the reaction start temperature of the adhesive is preferable. In order to shorten the cooling time, it is preferable that the difference between the temperature of the crimping tool when picking up the semiconductor chip and the temperature of the crimping tool when temporarily crimping is small. The temperature difference is preferably 100 ° C.
  • the reaction start temperature of the adhesive is the onset temperature when measured using DSC (manufactured by Perkin Elmer, DSC-Pyrs1) under the conditions of a sample amount of 10 mg, a heating rate of 10 ° C./min, and air or nitrogen atmosphere. Say.
  • the load applied for the temporary pressure bonding is appropriately set in consideration of the control of the number of connection parts (bumps), the absorption of the height variation of the connection parts (bumps), the deformation amount of the connection parts (bumps), and the like. It is preferable that the opposing connection parts are in contact with each other after the temporary pressure bonding. If the connection portions are in contact with each other after the temporary pressure bonding, metal bonding of the connection portions is likely to be formed in the main pressure bonding, and there is a tendency that the adhesive is less bitten.
  • the load for provisional pressure bonding is preferably larger in order to eliminate voids and contact the connecting portion, for example, 0.009N to 0.2N per one connecting portion (for example, bump).
  • the temporary press bonding step is preferably as short as possible from the viewpoint of productivity improvement, and may be, for example, 5 seconds or less, 3 seconds or less, or 2 seconds or less.
  • the opposing connecting portions are joined by metal bonding, and the gap between the connecting portions is usually filled with an adhesive.
  • the main press-bonding step is performed using an apparatus that can be heated to the melting point of the metal of the connection portion or higher and can be pressurized by atmospheric pressure. Examples of the apparatus include a pressurized reflow furnace and a pressurized oven.
  • the heating temperature for the main press-bonding may be higher than the melting point of at least one of the opposing connection portions (for example, bump-bump, bump-pad, bump-wiring).
  • the metal of the connection portion is solder, it is preferably 220 ° C. or higher and 330 ° C. or lower. If the temperature of the main pressure bonding is low, the metal at the connection portion does not melt and a sufficient metal bond may not be formed. If the temperature of the main pressure bonding is excessively high, the effect of suppressing voids tends to be relatively small, or the solder tends to scatter.
  • the heating temperature in the main pressing process is preferably higher than the reaction start temperature of the adhesive.
  • the atmosphere in which the main pressure bonding is performed is not particularly limited, but an atmosphere containing air, nitrogen, formic acid or the like is preferable.
  • the pressure for the main pressure bonding is appropriately set according to the size and number of members to be connected.
  • the pressure for the main pressure bonding may be, for example, greater than atmospheric pressure and 1 MPa or less.
  • a higher pressure is preferable from the viewpoint of void suppression and improved connectivity, and a lower pressure is preferable from the viewpoint of fillet suppression. Therefore, the pressure for the main pressure bonding is more preferably 0.05 to 0.5 MPa.
  • the crimping machine (crimping tool) is used to fix the temporary crimped body at a temperature equal to or higher than the melting point of the connection part metal. You may add the process pressurized while heating to (the temperature of 230 degreeC or more in the case of solder).
  • the crimping machine in this step is preferably different from the crimping machine (crimping tool) for temporary crimping from the viewpoint of improving productivity. From the viewpoint of improving productivity, the pressing time is preferably 5 seconds or less, 3 seconds or less, or 2 seconds or less.
  • the adhesive contains a thermosetting resin and its curing agent.
  • the adhesive may further contain a polymer component having a weight average molecular weight of 10,000 or more.
  • thermosetting resin preferably has a weight average molecular weight of less than 10,000.
  • the thermosetting resin having a weight average molecular weight of less than 10,000 reacts with the curing agent, the curability of the adhesive is improved. Moreover, it is preferable also from a viewpoint of suppression of a void and heat resistance.
  • thermosetting resin examples include an epoxy resin and an acrylic resin.
  • the epoxy resin is not particularly limited as long as it has two or more epoxy groups in the molecule.
  • As the epoxy resin bisphenol A type, bisphenol F type, naphthalene type, phenol novolac type, cresol novolac type, phenol aralkyl type, biphenyl type, triphenylmethane type, dicyclopentadiene type, various polyfunctional epoxy resins, etc. should be used. Can do. These can be used alone or as a mixture of two or more.
  • the acrylic resin is not particularly limited as long as it has one or more (meth) acrylic groups in the molecule.
  • the acrylic resin for example, bisphenol A type, bisphenol F type, naphthalene type, phenol novolac type, cresol novolac type, phenol aralkyl type, biphenyl type, triphenylmethane type, dicyclopentadiene type, fluorene type, adamantane type, various types A functional acrylic resin or the like can be used. These can be used alone or as a mixture of two or more.
  • “(meth) acryl group” is used as a term meaning either an acryl group or a methacryl group.
  • the acrylic resin is preferably solid at room temperature (25 ° C.). Solids are less likely to generate voids than liquids, and the viscosity (tack) of the adhesive of the B stage before curing is small, and tends to be excellent in handling.
  • the number of (meth) acrylic groups possessed by the acrylic resin is preferably 3 or less per molecule.
  • the number of (meth) acrylic groups is 4 or more, the number of functional groups is so large that curing in a short time does not proceed sufficiently and the curing reaction rate decreases (the curing network proceeds rapidly, unreacted groups). May remain).
  • the content of the thermosetting resin in the adhesive is, for example, 10 to 50 parts by mass with respect to 100 parts by mass of the total mass of the adhesive.
  • the content of the thermosetting resin is 10 parts by mass or less, it tends to be difficult to sufficiently control the flow of the cured resin.
  • the content of the thermosetting resin is 50 parts by mass or more, the cured product tends to be too hard and the warp of the semiconductor device tends to increase.
  • ⁇ Curing agent examples include a phenol resin curing agent, an acid anhydride curing agent, an amine curing agent, an imidazole curing agent, a phosphine curing agent, an azo compound, and an organic peroxide. Of these, imidazole curing agents are preferred.
  • the phenol resin curing agent is not particularly limited as long as it has two or more phenolic hydroxyl groups in the molecule.
  • phenol novolak, cresol novolak, phenol aralkyl resin, cresol naphthol formaldehyde polycondensate, triphenyl A methane type polyfunctional phenol and various polyfunctional phenol resins can be used. These can be used alone or as a mixture of two or more.
  • the equivalent ratio of the phenol resin-based curing agent to the thermosetting resin is preferably 0.3 to 1.5 from the viewpoint of good curability, adhesiveness, and storage stability. 0.4 to 1.0 is more preferable, and 0.5 to 1.0 is still more preferable. When the equivalence ratio is 0.3 or more, the curability tends to be improved and the adhesive force tends to be improved. When the equivalent ratio is 1.5 or less, the unreacted phenolic hydroxyl group does not remain excessively, and the water absorption is increased. It tends to be kept low and the insulation reliability improves.
  • acid anhydride curing agent for example, methylcyclohexanetetracarboxylic dianhydride, trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic dianhydride, and ethylene glycol bisanhydro trimellitate may be used. it can. These can be used alone or as a mixture of two or more.
  • the equivalent ratio of the acid anhydride curing agent to the thermosetting resin is 0.3 to 1.5 from the viewpoint of good curability, adhesiveness, and storage stability. Is preferable, 0.4 to 1.0 is more preferable, and 0.5 to 1.0 is still more preferable.
  • the equivalence ratio is 0.3 or more, the curability is improved and the adhesive force tends to be improved.
  • the equivalent ratio is 1.5 or less, the unreacted acid anhydride does not remain excessively, and the water absorption rate is increased. It tends to be kept low and the insulation reliability improves.
  • amine curing agent for example, dicyandiamide can be used.
  • the equivalent ratio of the amine curing agent to the thermosetting resin is preferably 0.3 to 1.5 from the viewpoint of good curability, adhesiveness and storage stability, To 1.0 is more preferable, and 0.5 to 1.0 is still more preferable. If the equivalence ratio is 0.3 or more, the curability tends to be improved and the adhesive strength tends to be improved. If the equivalent ratio is 1.5 or less, excessive unreacted amine does not remain and the insulation reliability is improved. Tend to.
  • imidazole curing agents examples include 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole.
  • the content of the imidazole-based curing agent is preferably 0.1 to 20 parts by mass and more preferably 0.1 to 10 parts by mass with respect to 100 parts by mass of the thermosetting resin. If the content of the imidazole-based curing agent is 0.1 parts by mass or more, the curability tends to be improved, and if it is 20 parts by mass or less, the adhesive is not cured before the metal bond is formed. There is a tendency for poor connection to occur.
  • phosphine-based curing agent examples include triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra (4-methylphenyl) borate and tetraphenylphosphonium (4-fluorophenyl) borate.
  • the content of the phosphine-based curing agent is preferably 0.1 to 10 parts by mass and more preferably 0.1 to 5 parts by mass with respect to 100 parts by mass of the thermosetting resin. If the content of the phosphine-based curing agent is 0.1 parts by mass or more, the curability tends to be improved, and if it is 10 parts by mass or less, the adhesive is not cured before the metal bond is formed. There is a tendency for poor connection to occur.
  • the phenol resin curing agent, the acid anhydride curing agent and the amine curing agent can be used alone or as a mixture of two or more.
  • the imidazole-based curing agent and the phosphine-based curing agent may each be used alone, but may be used together with a phenol resin-based curing agent, an acid anhydride-based curing agent, or an amine-based curing agent.
  • organic peroxide examples include ketone peroxide, peroxyketal, hydroperoxide, dialkyl peroxide, diacyl peroxide, peroxydicarbonate, and peroxyester. From the viewpoint of storage stability, hydroperoxide, dialkyl peroxide, and peroxyester are preferred. Furthermore, hydroperoxide and dialkyl peroxide are preferable from the viewpoint of heat resistance. These can be used alone or as a mixture of two or more.
  • the content of the organic peroxide is preferably 0.5 to 10% by mass and more preferably 1 to 5% by mass with respect to the acrylic resin.
  • the content of the organic peroxide is less than 0.5% by mass, curing tends to be difficult to proceed sufficiently.
  • the content of the organic peroxide exceeds 10% by mass, the curing proceeds rapidly and the number of reactive sites increases, so that the molecular chain is shortened or unreacted groups remain and the reliability tends to decrease. .
  • the curing agent combined with the epoxy resin or acrylic resin is not particularly limited as long as curing proceeds.
  • the curing agent combined with the epoxy resin is a combination of a phenol resin curing agent and an imidazole curing agent, a combination of an acid anhydride curing agent and an imidazole curing agent, and an amine from the viewpoints of handleability, storage stability, and curability. It is preferable to use a combination of an imidazole curing agent and an imidazole curing agent, or an imidazole curing agent alone. Since productivity improves when connected in a short time, it is more preferable to use an imidazole curing agent excellent in rapid curability alone.
  • the curing agent combined with the acrylic resin is preferably an organic peroxide from the viewpoints of handleability and storage stability.
  • Polymer components having a weight average molecular weight of 10,000 or more are epoxy resin, phenoxy resin, polyimide resin, polyamide resin, polycarbodiimide resin, cyanate ester resin, acrylic resin, polyester resin, polyethylene resin, polyethersulfone resin, polyetherimide resin, Polyvinyl acetal resin, urethane resin, acrylic rubber, etc. are mentioned, among which epoxy resin, phenoxy resin, polyimide resin, acrylic resin, acrylic rubber, cyanate ester resin, polycarbodiimide resin, etc.
  • an epoxy resin, a phenoxy resin, a polyimide resin, an acrylic resin, and an acrylic rubber that are excellent in heat resistance and film formability are preferable, Furthermore, an epoxy resin, a phenoxy resin, a polyimide resin, an acrylic resin, and an acrylic rubber that are excellent in heat resistance and film formability are more preferable.
  • These polymer components can be used alone or as a mixture or copolymer of two or more.
  • the polymer component having a weight average molecular weight of 10,000 or more may be a thermosetting resin that reacts with a curing agent.
  • the mass ratio between the polymer component and the above-described epoxy resin is not particularly limited.
  • the mass ratio of the epoxy resin to the polymer component is preferably 0.01 to 5, 0.05 to 4, or 0.1 to 3. When this mass ratio is smaller than 0.01, curability is lowered and adhesive strength may be lowered. When this mass ratio is larger than 5, film formability may be lowered.
  • the mass ratio of the polymer component and the acrylic resin is not particularly limited.
  • the mass ratio of the acrylic resin to the polymer component is preferably 0.01 to 10, more preferably 0.05 to 5, and still more preferably 0.1 to 5. When this mass ratio is smaller than 0.01, curability is lowered and adhesive strength may be lowered. If this mass ratio is greater than 10, film formability may be reduced.
  • the glass transition temperature (Tg) of the polymer component is preferably 120 ° C. or less, more preferably 100 ° C. or less, and still more preferably 85 ° C. or less, from the viewpoint of excellent adhesiveness of the adhesive to the substrate or semiconductor chip. If the Tg of the polymer component exceeds 120 ° C., it becomes difficult to embed irregularities such as bumps on the semiconductor chip, electrodes formed on the substrate and wiring patterns with an adhesive, so the effect of suppressing voids becomes relatively small. there is a possibility.
  • Tg is Tg measured using DSC (manufactured by PerkinElmer Co., Ltd., DSC-7 type) under conditions of a sample amount of 10 mg, a heating rate of 10 ° C./min, and an air atmosphere.
  • the weight average molecular weight of the polymer component is 10,000 or more.
  • the weight average molecular weight of the polymer component is preferably 30000 or more, more preferably 40000 or more, and still more preferably 50000 or more.
  • the weight average molecular weight means a value in terms of standard polystyrene measured by gel permeation chromatography (GPC).
  • the adhesive may contain a flux component, that is, a flux activator that is a compound exhibiting flux activity (activity for removing oxides and impurities).
  • a flux activator that is a compound exhibiting flux activity (activity for removing oxides and impurities).
  • the flux activator include nitrogen-containing compounds having lone pairs such as imidazoles and amines, carboxylic acids, phenols, and alcohols. Compared with alcohol etc., the organic acid expresses flux activity more strongly and the connectivity is improved.
  • Filler may be blended in the adhesive to control the viscosity and physical properties of the cured product, and to suppress void generation and moisture absorption when the semiconductor chips or between the semiconductor chip and the substrate are connected.
  • the insulating inorganic filler include glass, silica, alumina, titanium oxide, carbon black, mica, and boron nitride. Among these, silica, alumina, titanium oxide, and boron nitride are preferable, and silica, alumina, and boron nitride are more preferable.
  • whiskers include aluminum borate, aluminum titanate, zinc oxide, calcium silicate, magnesium sulfate, and boron nitride.
  • polyurethane polyimide
  • methyl methacrylate resin methyl methacrylate-butadiene-styrene copolymer resin (MBS)
  • MFS methyl methacrylate-butadiene-styrene copolymer resin
  • whiskers can be used alone or as a mixture of two or more. There is no particular limitation on the shape, particle size, and blending amount of the filler.
  • Resin fillers are suitable for improving reflow resistance because they can impart flexibility at high temperatures such as 260 ° C. compared to inorganic fillers. Moreover, since flexibility is imparted, it is also effective in improving film formability.
  • the filler is preferably insulating.
  • a semiconductor adhesive containing no conductive metal filler such as silver filler or solder filler is preferred.
  • a surface-treated filler is preferable.
  • the surface treatment include glycidyl (epoxy), amine, phenyl, phenylamino, (meth) acrylic, and vinyl.
  • glycidyl, phenylamino, and (meth) acrylic are preferred.
  • phenyl, acrylic, and (meth) acrylic are more preferable.
  • silane treatment epoxy silane, amino silane, acrylic silane, etc.
  • fillers and whiskers can be used alone or as a mixture of two or more. There is no particular limitation on the shape, particle size, and blending amount of the filler. Further, the physical properties may be appropriately adjusted by surface treatment.
  • the average particle diameter of the filler is preferably 1.5 ⁇ m or less from the viewpoint of preventing biting during flip chip connection, and more preferably 1.0 ⁇ m or less from the viewpoint of visibility and transparency.
  • the filler content is preferably 30 to 90% by mass, more preferably 40 to 80% by mass, based on the solid content of the adhesive (the mass of components other than the solvent).
  • the filler content is less than 30% by mass, heat dissipation is low, and void generation and moisture absorption tend to increase.
  • the filler content exceeds 90% by mass, the viscosity of the adhesive increases, resulting in a decrease in fluidity and a trapping (trapping) of the filler into the connection portion, which tends to decrease connection reliability.
  • the adhesive may contain an ion trapper, an antioxidant, a silane coupling agent, a titanium coupling agent, and a leveling agent. These may be used singly or in combination of two or more. About these compounding quantities, what is necessary is just to adjust suitably so that the effect of each additive may express.
  • the adhesive is preferably in the form of a film.
  • Productivity improves that it is a film form.
  • a method for producing a film-like adhesive (film-like) is shown below.
  • thermosetting resin, a curing agent, a polymer component, filler, other additives and the like are added to an organic solvent, and dissolved or dispersed by stirring, mixing, kneading, etc. to prepare a resin varnish.
  • Resin varnish is applied onto a base film that has been subjected to a mold release treatment using a knife coater, roll coater, applicator, die coater, or comma coater, and then the organic solvent is reduced by heating.
  • a film adhesive is formed on the film. Further, before the organic solvent is reduced by heating, a film adhesive may be formed on the wafer by spin coating a resin varnish on a wafer or the like to form a film and then drying the solvent. .
  • the base film is not particularly limited as long as it has heat resistance capable of withstanding the heating conditions when the organic solvent is volatilized.
  • the polyester film, the polypropylene film, the polyethylene terephthalate film, the polyimide film, the polyetherimide film, the poly Examples include ether naphthalate films and methylpentene films.
  • the base film is not limited to a single layer made of these films, and may be a multilayer film made of two or more materials.
  • the conditions for volatilizing the organic solvent from the applied resin varnish are preferably heating at 50 to 200 ° C. for 0.1 to 90 minutes. As long as there is no influence on the void and viscosity adjustment after mounting, it is preferable that the organic solvent volatilizes to 1.5% or less.
  • Thermosetting resin (weight average molecular weight (Mw) is less than 10,000)
  • Epoxy resin EP1032H60 polyfunctional solid epoxy resin containing triphenolmethane skeleton (Mitsubishi Chemical Corporation, weight average molecular weight: 800 to 2000)
  • YL983U Bisphenol F type liquid epoxy resin (Mitsubishi Chemical Corporation, molecular weight: about 336)
  • YL7175-1000 A flexible semi-solid epoxy resin (Mitsubishi Chemical Corporation, weight average molecular weight: 1000 to 5000)
  • Curing agent 2MAOK-PW 2,4-diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl-s-triazine isocyanuric acid adduct (manufactured by Shikoku Kasei Co., Ltd.)
  • Polymer component ZX1356-2 having a weight average molecular weight (Mw) of 10,000
  • a semiconductor chip with solder bumps chip size: 7.3 mm ⁇ 7.3 mm, thickness 0.05 mm, bump (connection part) height: about 45 ⁇ m (total of copper pillars and solder), number of bumps: 1048 pins , Pitch 80 ⁇ m, product name: WALTS-TEG CC80 (manufactured by Waltz Co., Ltd.) was subjected to temporary pressure bonding by heating and pressurizing with a flip chip bonder (FCB3, manufactured by Panasonic Corporation). The conditions for temporary pressure bonding were 130 ° C., 75 N, and 2 seconds.
  • Example 1 By heating and pressurizing the laminated body (temporary pressure bonded body) after the temporary pressure bonding under the following conditions, the connection portions of the semiconductor chips were joined to prepare a sample for connection evaluation.
  • Example 1 ⁇ Device: Pressurized reflow device (VSU28, manufactured by Shin Apex Co., Ltd.) ⁇ Heating temperature / time: 170 ° C / 5 minutes, 260 ° C / 5 minutes in order ⁇ Pressure: 0.4 MPa (atmospheric pressure) (Example 2) ⁇ Device: Pressurized reflow device (VSU28, manufactured by Shin Apex Co., Ltd.) ⁇ Heating temperature / time: 260 degrees / 5 minutes ⁇ Pressure: 0.4 MPa (atmospheric pressure) (Comparative Example 1) ⁇ Device: Oven (DKN402, manufactured by Yamato Scientific Co., Ltd.) ⁇ Heating temperature / time: 170 degrees / 5 minutes, heating in order of 260 degrees / 5 minutes ⁇ Pressure: atmospheric
  • SYMBOLS 1 ... Semiconductor chip, 2 ... Substrate, 10 ... Semiconductor chip main body, 15, 16 ... Wiring, 20 ... Substrate main body, 30, 32, 33 ... Bump, 34 ... Through electrode, 40 ... Adhesive layer, 50 ... Interposer main body , 100, 200, 300, 400, 500... Semiconductor devices.

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Abstract

A method for manufacturing a semiconductor device, the method comprising: a step for temporarily crimping a first member having a connection part and a second member having a connection part, with an adhesive agent interposed therebetween, at a temperature that is lower than the melting point of the connecting point of the first member and the melting point of the connection part of the second member, and thereby obtaining a temporary crimping body in which the connection part of the first member and the connection part of the second member are disposed facing opposite each other; and a step for heating the temporary crimping body to at least the temperature of the melting point of at least one of the connection part of the first member and the connection part of the second member while pressurizing using atmospheric pressure, and thereby joining the connection parts that are disposed facing opposite each other so as to be electrically connected to each other, the first member being a semiconductor chip or a semiconductor wafer, and the second member being a wired circuit board, a semiconductor chip, or a semiconductor wafer.

Description

半導体装置及びその製造方法Semiconductor device and manufacturing method thereof
　本発明は、半導体装置及びその製造方法に関する。 The present invention relates to a semiconductor device and a manufacturing method thereof.
　従来、半導体チップと基板を接続する際には、金ワイヤ等の金属細線を用いるワイヤーボンディング方式が広く適用されてきた。 Conventionally, when connecting a semiconductor chip and a substrate, a wire bonding method using a fine metal wire such as a gold wire has been widely applied.
　近年、半導体装置に対する高機能、高集積、高速化等の要求に対応するため、半導体チップ又は基板にバンプと呼ばれる導電性突起を形成して、半導体チップと基板間で直接接続するフリップチップ接続方式（ＦＣ接続方式）が広まりつつある。 In recent years, in order to meet demands for high functionality, high integration, high speed, etc. for semiconductor devices, a flip chip connection method in which conductive protrusions called bumps are formed on a semiconductor chip or a substrate and the semiconductor chip and the substrate are directly connected. (FC connection method) is spreading.
　フリップチップ接続方式としては、はんだ、スズ、金、銀、銅等を用いて接続部を金属接合させる方法、超音波振動を印加して接続部を金属接合させる方法、樹脂の収縮力によって機械的接触を保持する方法などが知られている。接続部の信頼性の観点から、はんだ、スズ、金、銀、銅等を用いて接続部を金属接合させる方法が一般的である。 Flip chip connection methods include soldering, tin, gold, silver, copper, etc., joining the metal to the joint, applying ultrasonic vibration to the metal, joining the joint, and mechanically using the shrinkage of the resin. A method for maintaining contact is known. From the viewpoint of the reliability of the connection part, a method of metal-joining the connection part using solder, tin, gold, silver, copper or the like is common.
　例えば、半導体チップと基板間の接続においては、ＢＧＡ（Ｂａｌｌ　Ｇｒｉｄ　Ａｒｒａｙ）、ＣＳＰ（Ｃｈｉｐ　Ｓｉｚｅ　Ｐａｃｋａｇｅ）等に盛んに用いられているＣＯＢ（Ｃｈｉｐ　Ｏｎ　Ｂｏａｒｄ）型の接続方式もＦＣ接続方式である。 For example, in connection between a semiconductor chip and a substrate, a COB (Chip On Board) type connection method that is actively used in BGA (Ball Grid Array), CSP (Chip Size Package), etc. is also an FC connection method.
　ＣＰＵ、ＭＰＵ等に用いられるエリアアレイ型の半導体パッケージでは、高機能化が強く要求される。そのため、チップの大型化、ピン（バンプ、配線）数の増加、ピッチ及びギャップの高密度化の傾向がある。 In area array type semiconductor packages used for CPUs, MPUs, etc., high functionality is strongly required. Therefore, there is a tendency to increase the size of the chip, increase the number of pins (bumps, wiring), and increase the density of the pitch and gap.
　ＦＣ接続方式は半導体チップ上にバンプ又は配線を形成して、半導体チップ間で接続するＣＯＣ（Ｃｈｉｐ　Ｏｎ　Ｃｈｉｐ）型接続方式にも広く用いられている。 The FC connection method is also widely used in a COC (Chip On Chip) type connection method in which bumps or wirings are formed on semiconductor chips and the semiconductor chips are connected to each other.
　また、上述した接続方式を多段化したチップスタック型パッケージ、ＰＯＰ（Ｐａｃｋａｇｅ　Ｏｎ　Ｐａｃｋａｇｅ）、ＴＳＶ（Ｔｈｒｏｕｇｈ－Ｓｉｌｉｃｏｎ　Ｖｉａ）等のパッケージも広く普及し始めている。これらの技術は、半導体チップを平面状でなく立体的に配置することでパッケージを小さくできることから、半導体装置のさらなる小型化、薄型化、高機能化を追求できる。 In addition, packages such as a chip stack package, a POP (Package On Package), and a TSV (Through-Silicon Via) having the above-described connection method in multiple stages are beginning to be widely used. Since these technologies can reduce the package by arranging the semiconductor chips in a three-dimensional manner rather than in a planar shape, it is possible to pursue further miniaturization, thinning, and high functionality of the semiconductor device.
　これらは半導体の性能向上及びノイズ低減、実装面積の削減、省電力化にも有効であり、次世代の半導体配線技術として注目されている。 These are effective for improving semiconductor performance, reducing noise, reducing mounting area, and saving power, and are attracting attention as next-generation semiconductor wiring technologies.
　また、生産性向上の観点から、ウエハ上に半導体チップを接続した後に個片化し、半導体パッケージを作製するＣＯＷ（Ｃｈｉｐ　Ｏｎ　Ｗａｆｅｒ）、ウエハ同士を圧着した後に個片化して半導体パッケージを作製するＷＯＷ（Ｗａｆｅｒ　Ｏｎ　Ｗａｆｅｒ）も注目されている（例えば、特許文献１参照）。 Also, from the viewpoint of improving productivity, COW (Chip On Wafer) for manufacturing a semiconductor package after connecting semiconductor chips on the wafer, and WOW for manufacturing a semiconductor package by bonding the wafers together after being bonded to each other. (Wafer On Wafer) is also attracting attention (for example, see Patent Document 1).
　さらに、ウエハ上又はマップ基板にチップを位置合わせして複数仮圧着し、複数のチップを一括に圧着して接続を確保するギャングボンディング方式も生産性向上の観点から注目されている。 Furthermore, a gang bonding method in which a plurality of chips are positioned and temporarily bonded to a wafer or a map substrate and a plurality of chips are collectively bonded to ensure connection is also attracting attention from the viewpoint of improving productivity.
　上述したフリップチップ接続方式のパッケージの組立では、まず、ダイシングしたウエハから半導体チップ又は半導体接着剤が供給された半導体チップをコレットでピックアップし、コレットを介して圧着ツールに供給する。次に、チップ－チップ又はチップ－基板の位置合わせを行い、これらを圧着する。圧着の際、金属結合が形成されるように、どちらかの一方又は両方の接続部の金属が融点以上に達するように圧着ツールの温度を上昇させる。その後、高温になった圧着ツールを冷却してから、再び半導体チップを圧着ツールでピックアップする。半導体チップ上に半導体接着剤が供給されている場合、圧着ツールは、半導体チップの半導体接着剤が供給された面（接続される面）の反対面を吸着し、半導体チップをピックアップする。この場合、圧着ツールを、接続部の金属が溶融する高温から、半導体接着剤が供給された半導体チップをピックアップ可能な低温まで冷却する必要がある。 In the assembly of the flip-chip connection type package described above, first, a semiconductor chip supplied with a semiconductor chip or a semiconductor adhesive is picked up from a diced wafer with a collet and supplied to a crimping tool through the collet. Next, chip-chip or chip-substrate alignment is performed and these are crimped. During crimping, the temperature of the crimping tool is increased so that the metal in either or both connections reaches a melting point or higher so that a metal bond is formed. After that, the crimping tool that has become high temperature is cooled, and then the semiconductor chip is picked up again by the crimping tool. When the semiconductor adhesive is supplied onto the semiconductor chip, the crimping tool picks up the semiconductor chip by adsorbing the opposite surface of the semiconductor chip to which the semiconductor adhesive is supplied (the surface to be connected). In this case, it is necessary to cool the crimping tool from a high temperature at which the metal of the connection portion melts to a low temperature at which the semiconductor chip supplied with the semiconductor adhesive can be picked up.
特開２００８－２９４３８２号公報JP 2008-294382 A
　接続部の金属の融点以上の加熱によって接続を確保するフリップチップ接続方式では、圧着直後の圧着ツールは高温（はんだであれば、例えば２４０℃以上）である。高温の圧着ツールを冷却せずに半導体チップをコレットからピックアップすると、圧着ツールの熱がコレットに転写して、コレット自体の温度が上昇して不具合が生じ、生産性が低下する。 In the flip chip connection method in which the connection is ensured by heating at or above the melting point of the metal of the connection part, the crimping tool immediately after the crimping is at a high temperature (for example, 240 ° C. or more for solder). If the semiconductor chip is picked up from the collet without cooling the high-temperature crimping tool, the heat of the crimping tool is transferred to the collet, the temperature of the collet itself rises, causing a problem, and the productivity is lowered.
　半導体接着剤が供給されている半導体チップでは、圧着ツールの熱がコレットに転写することで、半導体接着剤の温度が上昇して粘性が発現すると、半導体接着剤がコレットに付着し、生産性が低下する。半導体チップのみの場合でも、コレットが高温化すると、ダイシングテープから個片化された半導体チップをピックアップする際に、ダイシングテープにコレットを経由して熱が伝わり、ピックアップ性が低下し、生産性が低下する。 In semiconductor chips to which semiconductor adhesive is supplied, when the heat of the crimping tool is transferred to the collet, when the temperature of the semiconductor adhesive rises and viscosity develops, the semiconductor adhesive adheres to the collet and productivity is increased. descend. Even when only the semiconductor chip is used, if the temperature of the collet rises, when picking up a semiconductor chip separated from the dicing tape, heat is transferred to the dicing tape via the collet, resulting in a decrease in pick-up performance and productivity. descend.
　接続部の金属の融点より低温で仮圧着する工程と、金属の融点以上で加熱処理する工程とを分けることによって、上記のような問題を回避できると考えられる。しかし、この方法の場合、仮圧着の工程で発生したボイドが除去されず、このことが信頼性の低下を招く可能性があることが、本発明者らの検討により明らかとなった。 It is considered that the above-mentioned problems can be avoided by separating the step of temporarily press-bonding at a temperature lower than the melting point of the metal at the connection portion and the step of heat treatment at a temperature higher than the melting point of the metal. However, in the case of this method, it has been clarified by the present inventors that voids generated in the temporary press-bonding step are not removed, and this may lead to a decrease in reliability.
　そこで本発明の一側面の目的は、ボイド抑制と接続確保の両立が可能な、半導体装置の製造方法を提供することにある。 Therefore, an object of one aspect of the present invention is to provide a method for manufacturing a semiconductor device that can achieve both suppression of voids and securing of connection.
　本発明の一側面は、上述した課題を解決するためのものであり、接続部を有する第一の部材と接続部を有する第二の部材とを、接着剤を介して、第一の部材の接続部の融点及び第二の部材の接続部の融点よりも低い温度で仮圧着することによって、第一の部材の接続部と第二の部材の接続部とが対向配置されている仮圧着体を得る工程と、仮圧着体を、気圧によって加圧しながら、第一の部材の接続部又は第二の部材の接続部のうち少なくとも一方の融点以上の温度に加熱し、それによって対向配置された接続部同士を電気的に接続されるように接合する工程と、を備える、半導体装置の製造方法を提供する。第一の部材が半導体チップ又は半導体ウエハで、第二の部材が配線回路基板、半導体チップ又は半導体ウエハである。 One aspect of the present invention is to solve the above-described problem, and a first member having a connection portion and a second member having a connection portion are connected to each other through an adhesive. The temporary press-bonded body in which the connection portion of the first member and the connection portion of the second member are arranged to face each other by temporary press-bonding at a temperature lower than the melting point of the connection portion and the melting point of the connection portion of the second member. And heating the pressure-bonded body to a temperature equal to or higher than the melting point of at least one of the connection portion of the first member or the connection portion of the second member while pressurizing the pressure-bonded body by atmospheric pressure, thereby being arranged to face each other. And a step of joining the connection portions so as to be electrically connected to each other. The first member is a semiconductor chip or a semiconductor wafer, and the second member is a printed circuit board, a semiconductor chip or a semiconductor wafer.
　ピックアップされた半導体チップ等の第一の部材の低温での仮圧着の工程と、対向配置された接続部同士を電気的に接続されるように接合する本圧着の工程とを別々に行うことで、圧着ツールの冷却時間及び冷却工程を省くことができ、仮圧着の工程を設けない場合よりも生産性が向上する。さらに、気圧によって加圧しながら本圧着を行うことで、仮圧着後に接着剤中に残存するボイドを効率的に除去することができる。 By separately performing a temporary crimping step of the first member such as the picked-up semiconductor chip at a low temperature and a final crimping step of joining the opposingly arranged connection portions so as to be electrically connected to each other. The cooling time and the cooling process of the crimping tool can be omitted, and the productivity is improved as compared with the case where the provisional crimping process is not provided. Furthermore, by performing the main pressure bonding while applying pressure by the atmospheric pressure, voids remaining in the adhesive after the temporary pressure bonding can be efficiently removed.
　接着剤が、重量平均分子量１００００未満の熱硬化性樹脂、及びその硬化剤を含有していてもよい。接着剤が、重量平均分子量１００００以上の高分子成分を更に含有していてもよい。高分子成分の重量平均分子量が３００００以上であってもよい。高分子成分のガラス転移温度が１００℃以下であってもよい。接着剤がフィルム状接着剤であってもよい。 The adhesive may contain a thermosetting resin having a weight average molecular weight of less than 10,000 and its curing agent. The adhesive may further contain a polymer component having a weight average molecular weight of 10,000 or more. The weight average molecular weight of the polymer component may be 30000 or more. The glass transition temperature of the polymer component may be 100 ° C. or lower. The adhesive may be a film adhesive.
　本発明の一側面によれば、ボイド抑制と接続確保の両立が可能な、半導体装置の製造方法が提供される。また、本発明の方法は、多数の高信頼性の半導体装置を短時間で製造できる点でも優れる。 According to one aspect of the present invention, there is provided a semiconductor device manufacturing method capable of achieving both suppression of voids and securing of connection. The method of the present invention is also excellent in that a large number of highly reliable semiconductor devices can be manufactured in a short time.
半導体装置の一実施形態を示す断面図である。It is sectional drawing which shows one Embodiment of a semiconductor device. 半導体装置の一実施形態を示す断面図である。It is sectional drawing which shows one Embodiment of a semiconductor device. 半導体装置の一実施形態を示す断面図である。It is sectional drawing which shows one Embodiment of a semiconductor device.
　以下、本発明のいくつかの実施形態について詳細に説明する。ただし、本発明は以下の実施形態に限定されるものではない。 Hereinafter, some embodiments of the present invention will be described in detail. However, the present invention is not limited to the following embodiments.
（半導体装置）
　図１、図２及び図３は、それぞれ、後述する実施形態に係る方法によって製造され得る半導体装置の一実施形態を示す断面図である。 (Semiconductor device)
1, 2, and 3 are cross-sectional views each showing an embodiment of a semiconductor device that can be manufactured by a method according to an embodiment described later.
　図１は、半導体チップ及び基板のＣＯＢ型の接続態様を示す模式断面図である。図１の（ａ）に示す半導体装置１００は、半導体チップ１及び基板２（配線回路基板）と、これらの間に介在する接着剤層４０とを備える。半導体装置１００の場合、半導体チップ１は、半導体チップ本体１０と、半導体チップ本体１０の基板２側の面上に配置された配線１５と、配線１５上に配置された接続部としてのバンプ３０とを有する。基板２は、基板本体２０と、基板本体２０の半導体チップ１側の面上に配置された接続部としての配線１６とを有する。半導体チップ１のバンプ３０と、基板２の配線１６とは、金属接合によって電気的に接続されている。半導体チップ１及び基板２は、配線１６及びバンプ３０によりフリップチップ接続されている。配線１５，１６及びバンプ３０は、接着剤層４０によって封止されることで、外部環境から遮断されている。 FIG. 1 is a schematic cross-sectional view showing a COB type connection mode between a semiconductor chip and a substrate. A semiconductor device 100 shown in FIG. 1A includes a semiconductor chip 1 and a substrate 2 (wiring circuit board), and an adhesive layer 40 interposed therebetween. In the case of the semiconductor device 100, the semiconductor chip 1 includes a semiconductor chip body 10, wiring 15 disposed on the surface of the semiconductor chip body 10 on the substrate 2 side, and bumps 30 as connection portions disposed on the wiring 15. Have The substrate 2 includes a substrate body 20 and wirings 16 as connection portions disposed on the surface of the substrate body 20 on the semiconductor chip 1 side. The bump 30 of the semiconductor chip 1 and the wiring 16 of the substrate 2 are electrically connected by metal bonding. The semiconductor chip 1 and the substrate 2 are flip-chip connected by wirings 16 and bumps 30. The wirings 15 and 16 and the bumps 30 are sealed from the external environment by being sealed with the adhesive layer 40.
　図１の（ｂ）に示す半導体装置２００は、半導体チップ１と、基板２と、これらの間に介在する接着剤層４０とを備える。半導体装置２００の場合、半導体チップ１は、接続部として、半導体チップ１の基板２側の面に配置されたバンプ３２を有する。基板２は、接続部として、基板本体２０の半導体チップ１側の面上に配置されたバンプ３３を有する。半導体チップ１のバンプ３２と、基板２のバンプ３３とは、金属接合によって電気的に接続されている。半導体チップ１及び基板２は、バンプ３２，３３によりフリップチップ接続されている。バンプ３２，３３は、接着剤層４０によって封止されることで、外部環境から遮断されている。 1 (b) includes a semiconductor chip 1, a substrate 2, and an adhesive layer 40 interposed therebetween. In the case of the semiconductor device 200, the semiconductor chip 1 has bumps 32 arranged on the surface of the semiconductor chip 1 on the substrate 2 side as a connection portion. The substrate 2 has bumps 33 arranged on the surface of the substrate body 20 on the semiconductor chip 1 side as a connection portion. The bumps 32 of the semiconductor chip 1 and the bumps 33 of the substrate 2 are electrically connected by metal bonding. The semiconductor chip 1 and the substrate 2 are flip-chip connected by bumps 32 and 33. The bumps 32 and 33 are sealed from the external environment by being sealed with the adhesive layer 40.
　図２は、半導体チップ同士のＣＯＣ型の接続態様を示す。図２の（ａ）に示す半導体装置３００の構成は、２つの半導体チップ１が配線１５及びバンプ３０を介してフリップチップ接続されている点を除き、半導体装置１００と同様である。図２の（ｂ）に示す半導体装置４００の構成は、２つの半導体チップ１がバンプ３２を介してフリップチップ接続されている点を除き、半導体装置２００と同様である。 FIG. 2 shows a COC type connection mode between semiconductor chips. The configuration of the semiconductor device 300 shown in FIG. 2A is the same as that of the semiconductor device 100 except that the two semiconductor chips 1 are flip-chip connected via the wiring 15 and the bump 30. The configuration of the semiconductor device 400 shown in FIG. 2B is the same as that of the semiconductor device 200 except that the two semiconductor chips 1 are flip-chip connected via the bumps 32.
　図１及び図２において、配線１５、バンプ３２等の接続部は、パッドと呼ばれる金属膜（例えば、金めっき）であってもよく、ポスト電極（例えば、銅ピラー）であってもよい。例えば、図２の（ｂ）において、一方の半導体チップが接続部として銅ピラー及び接続バンプ（はんだ：スズ－銀）を有し、他方の半導体チップが接続部として金めっきを有する態様では、接続部が、接続部の金属材料のうち最も融点が低いはんだの融点以上の温度に達すれば、はんだが溶融して接続部間に金属接合が形成され、接続部間の電気的な接続が可能となる。 In FIG. 1 and FIG. 2, connecting portions such as the wiring 15 and the bump 32 may be a metal film called a pad (for example, gold plating) or a post electrode (for example, a copper pillar). For example, in FIG. 2B, one semiconductor chip has a copper pillar and a connection bump (solder: tin-silver) as a connection portion, and the other semiconductor chip has a gold plating as a connection portion. If the part reaches a temperature equal to or higher than the melting point of the solder with the lowest melting point among the metal materials of the connection part, the solder melts and a metal bond is formed between the connection parts, and electrical connection between the connection parts is possible Become.
　半導体チップ本体１０としては、特に制限はなく、シリコン、ゲルマニウム等の同一種類の元素から構成される元素半導体、ガリウムヒ素、インジウムリン等の化合物半導体などの各種半導体を用いることができる。 The semiconductor chip body 10 is not particularly limited, and various semiconductors such as elemental semiconductors composed of the same kind of elements such as silicon and germanium, and compound semiconductors such as gallium arsenide and indium phosphide can be used.
　基板２としては、配線回路基板であれば特に制限はなく、ガラスエポキシ、ポリイミド、ポリエステル、セラミック、エポキシ、ビスマレイミドトリアジン等を主な成分とする絶縁基板の表面に形成された金属層の不要な箇所をエッチング除去して配線（配線パターン）が形成された回路基板、上記絶縁基板の表面に金属めっき等によって配線（配線パターン）が形成された回路基板、上記絶縁基板の表面に導電性物質を印刷して配線（配線パターン）が形成された回路基板などを用いることができる。 The substrate 2 is not particularly limited as long as it is a printed circuit board, and does not require a metal layer formed on the surface of an insulating substrate mainly composed of glass epoxy, polyimide, polyester, ceramic, epoxy, bismaleimide triazine, or the like. A circuit board on which wiring (wiring pattern) is formed by etching away the portion, a circuit board on which wiring (wiring pattern) is formed on the surface of the insulating substrate by metal plating or the like, and a conductive substance on the surface of the insulating substrate A circuit board on which wiring (wiring pattern) is formed by printing can be used.
　配線１５及び１６、バンプ３０、バンプ３２及び３３等の接続部の材質としては、主成分として、金、銀、銅、はんだ（主成分は、例えば、スズ－銀、スズ－鉛、スズ－ビスマス、スズ－銅、スズ－銀－銅）、スズ、ニッケル等が用いられ、単一の成分のみで構成されていてもよく、複数の成分から構成されていてもよい。接続部は、これらの金属が積層された構造を有していてもよい。金属材料のうち、銅、はんだが、比較的安価であり、好ましい。接続信頼性の向上及び反り抑制の観点から、接続部がはんだを含んでいてもよい。 As the material of the connection parts such as the wirings 15 and 16, the bumps 30, and the bumps 32 and 33, the main components are gold, silver, copper, and solder (the main components are, for example, tin-silver, tin-lead, tin-bismuth). , Tin-copper, tin-silver-copper), tin, nickel or the like, and may be composed of a single component or a plurality of components. The connecting portion may have a structure in which these metals are laminated. Of the metal materials, copper and solder are preferable because they are relatively inexpensive. From the viewpoint of improving connection reliability and suppressing warpage, the connecting portion may contain solder.
　パッドの材質としては、主成分として、金、銀、銅、はんだ（主成分は、例えば、スズ－銀、スズ－鉛、スズ－ビスマス、スズ－銅、スズ－銀－銅）、スズ、ニッケル等が用いられ、単一の成分のみで構成されていてもよく、複数の成分から構成されていてもよい。パッドは、これらの金属が積層された構造を有していてもよい。接続信頼性の観点から、パッドが金又ははんだを含んでいてもよい。 As the pad material, the main components are gold, silver, copper, solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, tin-silver-copper), tin, nickel Etc. may be used and may be composed of only a single component or may be composed of a plurality of components. The pad may have a structure in which these metals are laminated. From the viewpoint of connection reliability, the pad may contain gold or solder.
　配線１５，１６（配線パターン）の表面には、金、銀、銅、はんだ（主成分は、例えば、スズ－銀、スズ－鉛、スズ－ビスマス、スズ－銅）、スズ、ニッケル等を主成分とする金属層が形成されていてもよい。この金属層は単一の成分のみで構成されていてもよく、複数の成分から構成されていてもよい。金属層が複数の金属層が積層された構造を有していてもよい。金属層が、比較的安価な銅又ははんだを含んでいてもよい。接続信頼性の向上及び反り抑制の観点から、金属層が、はんだを含んでいてもよい。 Gold, silver, copper, solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper), tin, nickel, etc. are mainly used on the surfaces of the wirings 15 and 16 (wiring patterns). A metal layer as a component may be formed. This metal layer may be composed of only a single component or may be composed of a plurality of components. The metal layer may have a structure in which a plurality of metal layers are stacked. The metal layer may include relatively inexpensive copper or solder. From the viewpoint of improving connection reliability and suppressing warpage, the metal layer may contain solder.
　図１又は図２に示すような半導体装置（パッケージ）を積層して、金、銀、銅、はんだ（主成分は、例えば、スズ－銀、スズ－鉛、スズ－ビスマス、スズ－銅、スズ－銀－銅）、スズ、ニッケル等で電気的に接続してもよい。接続するための金属は、比較的安価な銅又ははんだであってもよい。例えば、ＴＳＶ技術で見られるような、接着剤層を半導体チップ間に介して、フリップチップ接続又は積層し、半導体チップを貫通する孔を形成し、パターン面の電極とつなげてもよい。 A semiconductor device (package) as shown in FIG. 1 or FIG. 2 is laminated and gold, silver, copper, solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, tin) -Silver-copper), tin, nickel, etc. may be used for electrical connection. The metal for connection may be relatively inexpensive copper or solder. For example, as seen in the TSV technology, an adhesive layer may be flip-chip connected or stacked between semiconductor chips to form a hole penetrating the semiconductor chip and connected to the electrode on the pattern surface.
　図３は、半導体装置の他の実施形態（半導体チップ積層型の態様（ＴＳＶ））を示す断面図である。図３に示す半導体装置５００では、基板としてのインターポーザー本体５０上に形成された配線１５が半導体チップ１のバンプ３０と接続されることにより、半導体チップ１とインターポーザー５とがフリップチップ接続されている。半導体チップ１とインターポーザー５との間には接着剤層４０が介在している。上記半導体チップ１におけるインターポーザー５と反対側の表面上に、配線１５、バンプ３０及び接着剤層４０を介して半導体チップ１が繰り返し積層されている。半導体チップ１の表裏におけるパターン面の配線１５は、半導体チップ本体１０の内部を貫通する孔内に充填された貫通電極３４により互いに接続されている。貫通電極３４の材質としては、銅、アルミニウム等を用いることができる。 FIG. 3 is a cross-sectional view showing another embodiment of the semiconductor device (semiconductor chip stacked type (TSV)). In the semiconductor device 500 shown in FIG. 3, the wiring 15 formed on the interposer body 50 as a substrate is connected to the bumps 30 of the semiconductor chip 1, so that the semiconductor chip 1 and the interposer 5 are flip-chip connected. ing. An adhesive layer 40 is interposed between the semiconductor chip 1 and the interposer 5. On the surface of the semiconductor chip 1 opposite to the interposer 5, the semiconductor chip 1 is repeatedly laminated via the wiring 15, the bumps 30 and the adhesive layer 40. The wirings 15 on the pattern surface on the front and back sides of the semiconductor chip 1 are connected to each other by through electrodes 34 filled in holes that penetrate the inside of the semiconductor chip body 10. As the material of the through electrode 34, copper, aluminum, or the like can be used.
　このようなＴＳＶ技術により、通常は使用されない半導体チップの裏面からも信号を取得することができる。更には、半導体チップ１内に貫通電極３４を垂直に通すため、対向する半導体チップ１間、並びに、半導体チップ１及びインターポーザー５間の距離を短くし、柔軟な接続が可能である。接着剤層は、このようなＴＳＶ技術において、対向する半導体チップ１間、並びに、半導体チップ１及びインターポーザー５間の封止材料として適用することができる。 With such TSV technology, a signal can be obtained from the back surface of a semiconductor chip that is not normally used. Furthermore, since the through electrode 34 passes vertically through the semiconductor chip 1, the distance between the semiconductor chips 1 facing each other and between the semiconductor chip 1 and the interposer 5 can be shortened, and flexible connection is possible. In such a TSV technology, the adhesive layer can be applied as a sealing material between the semiconductor chips 1 facing each other and between the semiconductor chip 1 and the interposer 5.
（半導体装置の製造方法）
　半導体装置の製造方法の一実施形態は、接続部を有する第一の部材と接続部を有する第二の部材とを、接着剤を介して、第一の部材の接続部の融点及び第二の部材の接続部の融点よりも低い温度で仮圧着することによって、第一の部材の接続部と第二の部材の接続部とが対向配置されている仮圧着体を得る第一工程（仮圧着工程）と、仮圧着体を、気圧によって加圧しながら、対向配置された接続部の融点以上の温度に加熱し、それによって対向配置された接続部同士を電気的に接続されるように接合する第二工程（本圧着工程）と、を含む。第一の部材は、半導体チップ又は半導体ウエハであり、第二の部材は、配線回路基板、半導体チップ又は半導体ウエハである。 (Method for manufacturing semiconductor device)
In one embodiment of a method for manufacturing a semiconductor device, a first member having a connection part and a second member having a connection part are bonded to the melting point of the connection part of the first member and the second member via an adhesive. The first step (temporary pressure bonding) of obtaining a temporary pressure bonded body in which the connection portion of the first member and the connection portion of the second member are opposed to each other by temporary pressure bonding at a temperature lower than the melting point of the connection portion of the member. Step) and the temporary press-bonded body are heated to a temperature equal to or higher than the melting point of the opposingly disposed connecting portions while being pressurized by atmospheric pressure, thereby joining the opposingly disposed connecting portions so as to be electrically connected to each other. And a second step (main pressure bonding step). The first member is a semiconductor chip or a semiconductor wafer, and the second member is a printed circuit board, a semiconductor chip or a semiconductor wafer.
　仮圧着工程では、例えば、ダイシングテープ上で個片化された半導体チップをピックアップして、圧着機の圧着ツール（圧着ヘッド）に吸着させ、配線回路基板、他の半導体チップ又は半導体ウエハに仮圧着する。または、半導体ウエハを他の半導体ウエハに仮圧着してもよい。 In the temporary crimping step, for example, a semiconductor chip separated on a dicing tape is picked up and adsorbed by a crimping tool (crimping head) of a crimping machine, and temporarily crimped to a printed circuit board, another semiconductor chip or a semiconductor wafer. To do. Alternatively, the semiconductor wafer may be temporarily bonded to another semiconductor wafer.
　仮圧着の前に、例えば、第一の部材としての半導体チップ又は半導体ウエハ上にフィルム状接着剤を貼付する。貼付は加熱プレス、ロールラミネート、真空ラミネート等によって行うことができる。貼付されるフィルム状接着剤の面積及び厚みは、半導体チップ又は基板のサイズ、接続部（バンプ）の高さ等によって適宜設定される。フィルム状接着剤を半導体チップに貼付してもよいし、フィルム状接着剤が貼付された半導体ウエハをダイシングした後、これを半導体チップに個片化してもよい。 Prior to pre-bonding, for example, a film adhesive is stuck on a semiconductor chip or a semiconductor wafer as the first member. Affixing can be performed by a hot press, roll lamination, vacuum lamination, or the like. The area and thickness of the film adhesive to be affixed are appropriately set depending on the size of the semiconductor chip or substrate, the height of the connection part (bump), and the like. A film adhesive may be affixed to the semiconductor chip, or after dicing the semiconductor wafer having the film adhesive affixed thereto, it may be separated into semiconductor chips.
　仮圧着工程では、接続部同士を電気的に接続するために位置あわせが必要である。そのため、一般的にはフリップチップボンダー等の圧着機が使用される。 In the temporary crimping step, alignment is necessary to electrically connect the connecting portions. Therefore, generally, a crimping machine such as a flip chip bonder is used.
　仮圧着のために圧着ツールが半導体チップをピックアップする際に、半導体チップ上の半導体接着剤等に熱が転写しないように、圧着ツールが低温であることが好ましい。一方、仮圧着時には、接着剤の流動性を高めて、巻き込まれたボイドを効率的に排除できるように、半導体チップが高温に加熱されることが好ましい。ただし、接着剤の反応開始温度よりも低温の加熱が好ましい。冷却時間を短縮するため、半導体チップをピックアップする際の圧着ツールの温度と、仮圧着の際の圧着ツールの温度との差は、小さい方が好ましい。この温度差は、１００℃以下が好ましく、６０℃以下がより好ましく、実質的に０℃であることがさらに好ましい。温度差が１００℃以上であると、圧着ツールの冷却に時間がかかるため生産性が低下する傾向がある。接着剤の反応開始温度とはＤＳＣ（株式会社パーキンエルマー製、ＤＳＣ－Ｐｙｉｒｓ１）を用いて、サンプル量１０ｍｇ、昇温速度１０℃／分、空気又は窒素雰囲気の条件で測定したときのオンセット温度をいう。 When the crimping tool picks up the semiconductor chip for temporary crimping, the crimping tool is preferably at a low temperature so that heat is not transferred to the semiconductor adhesive or the like on the semiconductor chip. On the other hand, it is preferable that the semiconductor chip is heated to a high temperature so that the fluidity of the adhesive can be increased and the entrained voids can be efficiently eliminated during temporary bonding. However, heating at a temperature lower than the reaction start temperature of the adhesive is preferable. In order to shorten the cooling time, it is preferable that the difference between the temperature of the crimping tool when picking up the semiconductor chip and the temperature of the crimping tool when temporarily crimping is small. The temperature difference is preferably 100 ° C. or less, more preferably 60 ° C. or less, and still more preferably 0 ° C. If the temperature difference is 100 ° C. or more, it takes time to cool the crimping tool, and thus the productivity tends to decrease. The reaction start temperature of the adhesive is the onset temperature when measured using DSC (manufactured by Perkin Elmer, DSC-Pyrs1) under the conditions of a sample amount of 10 mg, a heating rate of 10 ° C./min, and air or nitrogen atmosphere. Say.
　仮圧着のために加えられる荷重は、接続部（バンプ）の数、接続部（バンプ）の高さばらつきの吸収、接続部（バンプ）の変形量等の制御を考慮して適宜設定される。仮圧着後に、対向する接続部同士が接触していることが好ましい。仮圧着後に接続部同士が接触していると、本圧着において接続部の金属結合が形成しやすく、また、接着剤の噛み込みが少ない傾向がある。仮圧着のための荷重は、ボイドを排除し、接続部の接触のために、大きい方が好ましく、例えば、接続部（例えばバンプ）１個辺り、０．００９Ｎ～０．２Ｎが好ましい。 The load applied for the temporary pressure bonding is appropriately set in consideration of the control of the number of connection parts (bumps), the absorption of the height variation of the connection parts (bumps), the deformation amount of the connection parts (bumps), and the like. It is preferable that the opposing connection parts are in contact with each other after the temporary pressure bonding. If the connection portions are in contact with each other after the temporary pressure bonding, metal bonding of the connection portions is likely to be formed in the main pressure bonding, and there is a tendency that the adhesive is less bitten. The load for provisional pressure bonding is preferably larger in order to eliminate voids and contact the connecting portion, for example, 0.009N to 0.2N per one connecting portion (for example, bump).
　仮圧着工程は、生産性向上の観点から、短時間であるほど好ましく、例えば、５秒以下、３秒以下、又は２秒以下であってもよい。 The temporary press bonding step is preferably as short as possible from the viewpoint of productivity improvement, and may be, for example, 5 seconds or less, 3 seconds or less, or 2 seconds or less.
　仮圧着工程に続く本圧着工程によって、対向する接続部が金属結合によって接合するとともに、通常、接着剤によって接続部間の空隙が充てんされる。本圧着工程は、接続部の金属の融点以上に加熱可能であり、気圧による加圧が可能な装置を用いて行われる。装置の例としては、加圧リフロ炉、及び加圧オーブンが挙げられる。 In the final press-bonding step following the temporary press-bonding step, the opposing connecting portions are joined by metal bonding, and the gap between the connecting portions is usually filled with an adhesive. The main press-bonding step is performed using an apparatus that can be heated to the melting point of the metal of the connection portion or higher and can be pressurized by atmospheric pressure. Examples of the apparatus include a pressurized reflow furnace and a pressurized oven.
　本圧着のための加熱温度は、対向する接続部（例えば、バンプ－バンプ、バンプ－パッド、バンプ－配線）のうち、少なくとも一方の金属の融点以上であればよい。例えば、接続部の金属がはんだである場合、２２０℃以上、３３０℃以下が好ましい。本圧着の温度が低温であると接続部の金属が溶融せず、十分な金属結合が形成されない可能性がある。本圧着の温度が過度に高温であると、ボイド抑制の効果が相対的に小さくなったり、はんだが飛散し易くなったりする傾向がある。 The heating temperature for the main press-bonding may be higher than the melting point of at least one of the opposing connection portions (for example, bump-bump, bump-pad, bump-wiring). For example, when the metal of the connection portion is solder, it is preferably 220 ° C. or higher and 330 ° C. or lower. If the temperature of the main pressure bonding is low, the metal at the connection portion does not melt and a sufficient metal bond may not be formed. If the temperature of the main pressure bonding is excessively high, the effect of suppressing voids tends to be relatively small, or the solder tends to scatter.
　本圧着工程の加熱温度は、接着剤の反応開始温度よりも高温であることが好ましい。本圧着の間に、接続部の金属結合の形成だけでなく、接着剤の硬化を促進することで、ボイド抑制及び接続性の点でよりいっそう優れた効果が得られる。本圧着工程の加圧を圧着機を用いて行うと、接続部の側面にはみ出た接着剤（フィレット）には圧着機の熱が伝わり難いため、本圧着工程の後、接着剤の硬化を十分に進行させるための加熱処理がさらに必要となることが多い。これに対して、圧着機ではなく、加圧リフロ炉、加圧オーブン等内での気圧による加圧であれば、全体に熱を加えることができ、本圧着後の加熱処理を短縮、又は無くすことができ、生産性が向上する。また、気圧による加圧であれば、複数の仮圧着体の本圧着を、一括して行い易い。さらに、圧着機を用いた直接的な加圧ではなく、気圧による加圧の方が、フィレット抑制の観点からも、好ましい。フィレット抑制は、半導体装置の小型化及び高密度化の傾向に対して、重要である。 The heating temperature in the main pressing process is preferably higher than the reaction start temperature of the adhesive. By promoting the curing of the adhesive as well as the formation of the metal bond at the connection portion during the main pressure bonding, a more excellent effect can be obtained in terms of void suppression and connectivity. If pressure is applied in the main crimping process using a crimping machine, it is difficult for heat from the crimping machine to be transmitted to the adhesive (fillet) that protrudes from the side of the connecting part. In many cases, further heat treatment is required to make it proceed. On the other hand, if pressure is applied by pressure in a pressure reflow furnace, pressure oven, etc., not a crimping machine, heat can be applied to the whole, shortening or eliminating the heat treatment after the main crimping. Can improve productivity. Moreover, if it is pressurization by atmospheric | air pressure, it will be easy to perform the main crimping | compression-bonding of several temporary crimping bodies collectively. Furthermore, rather than direct pressurization using a crimping machine, pressurization by atmospheric pressure is preferable from the viewpoint of fillet suppression. Fillet suppression is important for the trend toward smaller and higher density semiconductor devices.
　本圧着が行われる雰囲気は、特に制限はないが、空気、窒素、蟻酸等を含む雰囲気が好ましい。 The atmosphere in which the main pressure bonding is performed is not particularly limited, but an atmosphere containing air, nitrogen, formic acid or the like is preferable.
　本圧着のための圧力は、接続される部材のサイズ及び数等に応じて適宜設定される。本圧着のための圧力は、例えば、大気圧を超えて１ＭＰａ以下であってもよい。圧力が大きいほうがボイド抑制、接続性向上の観点から好ましく、フィレット抑制の観点からは圧力は小さいほうが好ましい。そのため、本圧着のための圧力は０．０５～０．５ＭＰａがより好ましい。 圧 力 The pressure for the main pressure bonding is appropriately set according to the size and number of members to be connected. The pressure for the main pressure bonding may be, for example, greater than atmospheric pressure and 1 MPa or less. A higher pressure is preferable from the viewpoint of void suppression and improved connectivity, and a lower pressure is preferable from the viewpoint of fillet suppression. Therefore, the pressure for the main pressure bonding is more preferably 0.05 to 0.5 MPa.
　ＴＳＶ構造の半導体装置のように、立体的に複数の半導体チップが積層される場合、複数の半導体チップを一つずつ積み重ねて仮圧着し、その後、積層された複数の半導体チップを一括して加熱及び加圧することで本圧着を行ってもよい。 When a plurality of semiconductor chips are stacked three-dimensionally like a semiconductor device having a TSV structure, the plurality of semiconductor chips are stacked one by one and temporarily bonded, and then the plurality of stacked semiconductor chips are heated together. And you may perform this press-fit by pressurizing.
　仮圧着工程と本圧着工程との間に、接続部同士の濡れ性（又は接続性）の向上の観点から、圧着機（圧着ツール）によって、仮圧着体を、接続部金属の融点以上の温度（はんだの場合、２３０℃以上の温度）に加熱しながら加圧する工程を追加してもよい。この工程の圧着機は、生産性向上の観点から、仮圧着のための圧着機（圧着ツール）とは別のものであることが好ましい。生産性向上の観点から、加圧時間は、５秒以下、３秒以下、又は２秒以下が好ましい。 From the viewpoint of improving the wettability (or connectivity) between the connection parts between the temporary crimping process and the final crimping process, the crimping machine (crimping tool) is used to fix the temporary crimped body at a temperature equal to or higher than the melting point of the connection part metal. You may add the process pressurized while heating to (the temperature of 230 degreeC or more in the case of solder). The crimping machine in this step is preferably different from the crimping machine (crimping tool) for temporary crimping from the viewpoint of improving productivity. From the viewpoint of improving productivity, the pressing time is preferably 5 seconds or less, 3 seconds or less, or 2 seconds or less.
（接着剤）
　以下、上述の半導体装置の製造方法で用いることのできる接着剤（半導体接着剤）について説明する。 (adhesive)
Hereinafter, an adhesive (semiconductor adhesive) that can be used in the above-described method for manufacturing a semiconductor device will be described.
　一実施形態に係る接着剤は、熱硬化性樹脂、及びその硬化剤を含有する。接着剤は、重量平均分子量１００００以上の高分子成分を更に含有してもよい。 The adhesive according to one embodiment contains a thermosetting resin and its curing agent. The adhesive may further contain a polymer component having a weight average molecular weight of 10,000 or more.
＜熱硬化性樹脂＞
　熱硬化性樹脂は、重量平均分子量１００００未満であることが好ましい。重量平均分子量１００００未満の熱硬化性樹脂が硬化剤と反応することで、接着剤の硬化性が向上する。また、ボイドの抑制、及び耐熱性の観点からも好ましい。 <Thermosetting resin>
The thermosetting resin preferably has a weight average molecular weight of less than 10,000. When the thermosetting resin having a weight average molecular weight of less than 10,000 reacts with the curing agent, the curability of the adhesive is improved. Moreover, it is preferable also from a viewpoint of suppression of a void and heat resistance.
　熱硬化性樹脂としては、例えば、エポキシ樹脂、及びアクリル樹脂が挙げられる。 Examples of the thermosetting resin include an epoxy resin and an acrylic resin.
　エポキシ樹脂は、分子内に２個以上のエポキシ基を有するものであれば特に制限はない。エポキシ樹脂としては、ビスフェノールＡ型、ビスフェノールＦ型、ナフタレン型、フェノールノボラック型、クレゾールノボラック型、フェノールアラルキル型、ビフェニル型、トリフェニルメタン型、ジシクロペンタジエン型、各種多官能エポキシ樹脂等を用いることができる。これらは単独又は２種以上の混合体として用いることができる。 The epoxy resin is not particularly limited as long as it has two or more epoxy groups in the molecule. As the epoxy resin, bisphenol A type, bisphenol F type, naphthalene type, phenol novolac type, cresol novolac type, phenol aralkyl type, biphenyl type, triphenylmethane type, dicyclopentadiene type, various polyfunctional epoxy resins, etc. should be used. Can do. These can be used alone or as a mixture of two or more.
　アクリル樹脂は、分子内に１個以上の（メタ）アクリル基を有するものであれば特に制限はない。アクリル樹脂として、例えば、ビスフェノールＡ型、ビスフェノールＦ型、ナフタレン型、フェノールノボラック型、クレゾールノボラック型、フェノールアラルキル型、ビフェニル型、トリフェニルメタン型、ジシクロペンタジエン型、フルオレン型、アダマンタン型、各種多官能アクリル樹脂等を用いることができる。これらは単独又は２種以上の混合体として用いることができる。なお、本明細書において、「（メタ）アクリル基」はアクリル基又はメタクリル基のいずれかを意味する用語として用いられる。 The acrylic resin is not particularly limited as long as it has one or more (meth) acrylic groups in the molecule. As the acrylic resin, for example, bisphenol A type, bisphenol F type, naphthalene type, phenol novolac type, cresol novolac type, phenol aralkyl type, biphenyl type, triphenylmethane type, dicyclopentadiene type, fluorene type, adamantane type, various types A functional acrylic resin or the like can be used. These can be used alone or as a mixture of two or more. In the present specification, “(meth) acryl group” is used as a term meaning either an acryl group or a methacryl group.
　アクリル樹脂は、室温（２５℃）で固形であることが好ましい。液状に比べて固形の方が、ボイドが発生しにくく、また、硬化前のＢステージの接着剤の粘性（タック）が小さく、取り扱いに優れる傾向がある。 The acrylic resin is preferably solid at room temperature (25 ° C.). Solids are less likely to generate voids than liquids, and the viscosity (tack) of the adhesive of the B stage before curing is small, and tends to be excellent in handling.
　アクリル樹脂が有する（メタ）アクリル基の数は、１分子当たり３以下が好ましい。（メタ）アクリル基の数が４以上であると、官能基数が多いため、短時間での硬化が十分に進行せず、硬化反応率が低下する（硬化のネットワークが急速に進み、未反応基が残存する場合がある）。 The number of (meth) acrylic groups possessed by the acrylic resin is preferably 3 or less per molecule. When the number of (meth) acrylic groups is 4 or more, the number of functional groups is so large that curing in a short time does not proceed sufficiently and the curing reaction rate decreases (the curing network proceeds rapidly, unreacted groups). May remain).
　接着剤における熱硬化性樹脂の含有量は、接着剤の全体質量１００質量部に対して、例えば１０～５０質量部である。熱硬化性樹脂の含有量が１０質量部以下であると、硬化後の樹脂の流動を十分に制御することが難しい傾向がある。熱硬化性樹脂の含有量が５０質量部以上であると、硬化物が硬くなりすぎて半導体装置の反りが大きくなる傾向がある。 The content of the thermosetting resin in the adhesive is, for example, 10 to 50 parts by mass with respect to 100 parts by mass of the total mass of the adhesive. When the content of the thermosetting resin is 10 parts by mass or less, it tends to be difficult to sufficiently control the flow of the cured resin. When the content of the thermosetting resin is 50 parts by mass or more, the cured product tends to be too hard and the warp of the semiconductor device tends to increase.
＜硬化剤＞
　硬化剤としては、例えば、フェノール樹脂系硬化剤、酸無水物系硬化剤、アミン系硬化剤、イミダゾール系硬化剤、ホスフィン系硬化剤、アゾ化合物、及び有機過酸化物が挙げられる。これらの中でも、イミダゾール系硬化剤が好ましい。 <Curing agent>
Examples of the curing agent include a phenol resin curing agent, an acid anhydride curing agent, an amine curing agent, an imidazole curing agent, a phosphine curing agent, an azo compound, and an organic peroxide. Of these, imidazole curing agents are preferred.
　フェノール樹脂系硬化剤としては、分子内に２個以上のフェノール性水酸基を有するものであれば特に制限はなく、例えば、フェノールノボラック、クレゾールノボラック、フェノールアラルキル樹脂、クレゾールナフトールホルムアルデヒド重縮合物、トリフェニルメタン型多官能フェノール及び各種多官能フェノール樹脂を用いることができる。これらは単独で又は２種以上の混合物として用いることができる。 The phenol resin curing agent is not particularly limited as long as it has two or more phenolic hydroxyl groups in the molecule. For example, phenol novolak, cresol novolak, phenol aralkyl resin, cresol naphthol formaldehyde polycondensate, triphenyl A methane type polyfunctional phenol and various polyfunctional phenol resins can be used. These can be used alone or as a mixture of two or more.
　熱硬化性樹脂に対するフェノール樹脂系硬化剤の当量比（フェノール性水酸基／エポキシ基、モル比）は、良好な硬化性、接着性及び保存安定性の観点から、０．３～１．５が好ましく、０．４～１．０がより好ましく、０．５～１．０が更に好ましい。当量比が０．３以上であると、硬化性が向上し接着力が向上する傾向があり、１．５以下であると未反応のフェノール性水酸基が過剰に残存することがなく、吸水率が低く抑えられ、絶縁信頼性が向上する傾向がある。 The equivalent ratio of the phenol resin-based curing agent to the thermosetting resin (phenolic hydroxyl group / epoxy group, molar ratio) is preferably 0.3 to 1.5 from the viewpoint of good curability, adhesiveness, and storage stability. 0.4 to 1.0 is more preferable, and 0.5 to 1.0 is still more preferable. When the equivalence ratio is 0.3 or more, the curability tends to be improved and the adhesive force tends to be improved. When the equivalent ratio is 1.5 or less, the unreacted phenolic hydroxyl group does not remain excessively, and the water absorption is increased. It tends to be kept low and the insulation reliability improves.
　酸無水物系硬化剤としては、例えば、メチルシクロヘキサンテトラカルボン酸二無水物、無水トリメリット酸、無水ピロメリット酸、ベンゾフェノンテトラカルボン酸二無水物及びエチレングリコールビスアンヒドロトリメリテートを用いることができる。これらは単独で又は２種以上の混合物として用いることができる。 As the acid anhydride curing agent, for example, methylcyclohexanetetracarboxylic dianhydride, trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic dianhydride, and ethylene glycol bisanhydro trimellitate may be used. it can. These can be used alone or as a mixture of two or more.
　熱硬化性樹脂に対する酸無水物系硬化剤の当量比（酸無水物基／エポキシ基、モル比）は、良好な硬化性、接着性及び保存安定性の観点から、０．３～１．５が好ましく、０．４～１．０がより好ましく、０．５～１．０が更に好ましい。当量比が０．３以上であると、硬化性が向上し接着力が向上する傾向があり、１．５以下であると未反応の酸無水物が過剰に残存することがなく、吸水率が低く抑えられ、絶縁信頼性が向上する傾向がある。 The equivalent ratio of the acid anhydride curing agent to the thermosetting resin (acid anhydride group / epoxy group, molar ratio) is 0.3 to 1.5 from the viewpoint of good curability, adhesiveness, and storage stability. Is preferable, 0.4 to 1.0 is more preferable, and 0.5 to 1.0 is still more preferable. When the equivalence ratio is 0.3 or more, the curability is improved and the adhesive force tends to be improved. When the equivalent ratio is 1.5 or less, the unreacted acid anhydride does not remain excessively, and the water absorption rate is increased. It tends to be kept low and the insulation reliability improves.
　アミン系硬化剤としては、例えば、ジシアンジアミドを用いることができる。 As the amine curing agent, for example, dicyandiamide can be used.
　熱硬化性樹脂に対するアミン系硬化剤の当量比（アミン／エポキシ基、モル比）は、良好な硬化性、接着性及び保存安定性の観点から０．３～１．５が好ましく、０．４～１．０がより好ましく、０．５～１．０が更に好ましい。当量比が０．３以上であると、硬化性が向上し接着力が向上する傾向があり、１．５以下であると未反応のアミンが過剰に残存することがなく、絶縁信頼性が向上する傾向がある。 The equivalent ratio of the amine curing agent to the thermosetting resin (amine / epoxy group, molar ratio) is preferably 0.3 to 1.5 from the viewpoint of good curability, adhesiveness and storage stability, To 1.0 is more preferable, and 0.5 to 1.0 is still more preferable. If the equivalence ratio is 0.3 or more, the curability tends to be improved and the adhesive strength tends to be improved. If the equivalent ratio is 1.5 or less, excessive unreacted amine does not remain and the insulation reliability is improved. Tend to.
　イミダゾール系硬化剤としては、例えば、２－フェニルイミダゾール、２－フェニル－４－メチルイミダゾール、１－ベンジル－２－メチルイミダゾール、１－ベンジル－２－フェニルイミダゾール、１－シアノエチル－２－ウンデシルイミダゾール、１－シアノ－２－フェニルイミダゾール、１－シアノエチル－２－ウンデシルイミダゾールトリメリテイト、１－シアノエチル－２－フェニルイミダゾリウムトリメリテイト、２，４－ジアミノ－６－［２’－メチルイミダゾリル－（１’）］－エチル－ｓ－トリアジン、２，４－ジアミノ－６－［２’－ウンデシルイミダゾリル－（１’）］－エチル－ｓ－トリアジン、２，４－ジアミノ－６－［２’－エチル－４’－メチルイミダゾリル－（１’）］－エチル－ｓ－トリアジン、２，４－ジアミノ－６－［２’－メチルイミダゾリル－（１’）］－エチル－ｓ－トリアジンイソシアヌル酸付加体、２－フェニルイミダゾールイソシアヌル酸付加体、２－フェニル－４，５－ジヒドロキシメチルイミダゾール、２－フェニル－４－メチル－５－ヒドロキシメチルイミダゾール、及び、エポキシ樹脂とイミダゾール類の付加体が挙げられる。これらの中でも、優れた硬化性、保存安定性及び接続信頼性の観点から、１－シアノエチル－２－ウンデシルイミダゾール、１－シアノ－２－フェニルイミダゾール、１－シアノエチル－２－ウンデシルイミダゾールトリメリテイト、１－シアノエチル－２－フェニルイミダゾリウムトリメリテイト、２，４－ジアミノ－６－［２’－メチルイミダゾリル－（１’）］－エチル－ｓ－トリアジン、２，４－ジアミノ－６－［２’－エチル－４’－メチルイミダゾリル－（１’）］－エチル－ｓ－トリアジン、２，４－ジアミノ－６－［２’－メチルイミダゾリル－（１’）］－エチル－ｓ－トリアジンイソシアヌル酸付加体、２－フェニルイミダゾールイソシアヌル酸付加体、２－フェニル－４，５－ジヒドロキシメチルイミダゾール及び２－フェニル－４－メチル－５－ヒドロキシメチルイミダゾールが好ましい。これらは単独で又は２種以上を併用して用いることができる。また、これらをマイクロカプセル化した潜在性硬化剤としてもよい。 Examples of imidazole curing agents include 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole. 1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6- [2′-methylimidazolyl -(1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl- (1')]-ethyl-s-triazine, 2,4-diamino-6- [ 2′-ethyl-4′-methylimidazolyl- (1 ′)]-ethyl-s-triazine, 2, -Diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2 -Phenyl-4-methyl-5-hydroxymethylimidazole, and adducts of epoxy resin and imidazoles can be mentioned. Among these, from the viewpoint of excellent curability, storage stability and connection reliability, 1-cyanoethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole trimelli Tate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2′-Ethyl-4′-methylimidazolyl- (1 ′)]-ethyl-s-triazine, 2,4-diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl-s-triazine Isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole and 2 Phenyl-4-methyl-5-hydroxymethylimidazole is preferred. These can be used alone or in combination of two or more. Moreover, it is good also as a latent hardening | curing agent which encapsulated these.
　イミダゾール系硬化剤の含有量は、熱硬化性樹脂１００質量部に対して、０．１～２０質量部が好ましく、０．１～１０質量部がより好ましい。イミダゾール系硬化剤の含有量が０．１質量部以上であると硬化性が向上する傾向があり、２０質量部以下であると金属接合が形成される前に接着剤が硬化することがなく、接続不良が発生しにくい傾向がある。 The content of the imidazole-based curing agent is preferably 0.1 to 20 parts by mass and more preferably 0.1 to 10 parts by mass with respect to 100 parts by mass of the thermosetting resin. If the content of the imidazole-based curing agent is 0.1 parts by mass or more, the curability tends to be improved, and if it is 20 parts by mass or less, the adhesive is not cured before the metal bond is formed. There is a tendency for poor connection to occur.
　ホスフィン系硬化剤としては、例えば、トリフェニルホスフィン、テトラフェニルホスホニウムテトラフェニルボレート、テトラフェニルホスホニウムテトラ（４－メチルフェニル）ボレート及びテトラフェニルホスホニウム（４－フルオロフェニル）ボレートが挙げられる。 Examples of the phosphine-based curing agent include triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra (4-methylphenyl) borate and tetraphenylphosphonium (4-fluorophenyl) borate.
　ホスフィン系硬化剤の含有量は、熱硬化性樹脂１００質量部に対して、０．１～１０質量部が好ましく、０．１～５質量部がより好ましい。ホスフィン系硬化剤の含有量が０．１質量部以上であると硬化性が向上する傾向があり、１０質量部以下であると金属接合が形成される前に接着剤が硬化することがなく、接続不良が発生しにくい傾向がある。 The content of the phosphine-based curing agent is preferably 0.1 to 10 parts by mass and more preferably 0.1 to 5 parts by mass with respect to 100 parts by mass of the thermosetting resin. If the content of the phosphine-based curing agent is 0.1 parts by mass or more, the curability tends to be improved, and if it is 10 parts by mass or less, the adhesive is not cured before the metal bond is formed. There is a tendency for poor connection to occur.
　フェノール樹脂系硬化剤、酸無水物系硬化剤及びアミン系硬化剤は、それぞれ１種を単独で又は２種以上の混合物として用いることができる。イミダゾール系硬化剤及びホスフィン系硬化剤はそれぞれ単独で用いてもよいが、フェノール樹脂系硬化剤、酸無水物系硬化剤又はアミン系硬化剤と共に用いてもよい。 The phenol resin curing agent, the acid anhydride curing agent and the amine curing agent can be used alone or as a mixture of two or more. The imidazole-based curing agent and the phosphine-based curing agent may each be used alone, but may be used together with a phenol resin-based curing agent, an acid anhydride-based curing agent, or an amine-based curing agent.
　有機過酸化物としては、例えば、ケトンパーオキサイド、パーオキシケタール、ハイドロパーオキサイド、ジアルキルパーオキサイド、ジアシルパーオキサイド、パーオキシジカーボネイト、パーオキシエステル等が挙げられる。保存安定性の観点から、ハイドロパーオキサイド、ジアルキルパーオキサイド、パーオキシエステルが好ましい。さらに、耐熱性の観点から、ハイドロパーオキサイド、ジアルキルパーオキサイドが好ましい。これらは単独又は２種以上の混合体として用いることができる。 Examples of the organic peroxide include ketone peroxide, peroxyketal, hydroperoxide, dialkyl peroxide, diacyl peroxide, peroxydicarbonate, and peroxyester. From the viewpoint of storage stability, hydroperoxide, dialkyl peroxide, and peroxyester are preferred. Furthermore, hydroperoxide and dialkyl peroxide are preferable from the viewpoint of heat resistance. These can be used alone or as a mixture of two or more.
　有機過酸化物の含有量は、アクリル樹脂に対して０．５～１０質量％が好ましく、１～５質量％がより好ましい。有機過酸化物の含有量が０．５質量％未満の場合、十分に硬化が進行しにくい傾向がある。有機過酸化物の含有量が１０質量％を超える場合、硬化が急激に進行し、反応点が多くなるため、分子鎖が短くなったり、未反応基が残存し信頼性が低下する傾向がある。 The content of the organic peroxide is preferably 0.5 to 10% by mass and more preferably 1 to 5% by mass with respect to the acrylic resin. When the content of the organic peroxide is less than 0.5% by mass, curing tends to be difficult to proceed sufficiently. When the content of the organic peroxide exceeds 10% by mass, the curing proceeds rapidly and the number of reactive sites increases, so that the molecular chain is shortened or unreacted groups remain and the reliability tends to decrease. .
　エポキシ樹脂又はアクリル樹脂と組み合わせられる硬化剤は、硬化が進行すれば特に制限はない。エポキシ樹脂と組み合わせられる硬化剤は、取り扱い性、保存安定性、硬化性の観点から、フェノール樹脂系硬化剤及びイミダゾール系硬化剤の組み合わせ、酸無水物系硬化剤及びイミダゾール系硬化剤の組み合わせ、アミン系硬化剤及びイミダゾール系硬化剤の組み合わせ、又はイミダゾール系硬化剤を単独で用いることが好ましい。短時間で接続すると生産性が向上することから、速硬化性に優れたイミダゾール系硬化剤を単独で用いることがより好ましい。短時間で硬化すると低分子成分等の揮発分が抑制できることから、ボイド発生抑制も可能である。なお、アクリル樹脂と組み合わせられる硬化剤は、取り扱い性、保存安定性の観点から、有機過酸化物が好ましい。 The curing agent combined with the epoxy resin or acrylic resin is not particularly limited as long as curing proceeds. The curing agent combined with the epoxy resin is a combination of a phenol resin curing agent and an imidazole curing agent, a combination of an acid anhydride curing agent and an imidazole curing agent, and an amine from the viewpoints of handleability, storage stability, and curability. It is preferable to use a combination of an imidazole curing agent and an imidazole curing agent, or an imidazole curing agent alone. Since productivity improves when connected in a short time, it is more preferable to use an imidazole curing agent excellent in rapid curability alone. When cured in a short time, volatile components such as low-molecular components can be suppressed, so that generation of voids can be suppressed. The curing agent combined with the acrylic resin is preferably an organic peroxide from the viewpoints of handleability and storage stability.
＜重量平均分子量１００００以上の高分子成分＞
　重量平均分子量１００００以上の高分子成分は、エポキシ樹脂、フェノキシ樹脂、ポリイミド樹脂、ポリアミド樹脂、ポリカルボジイミド樹脂、シアネートエステル樹脂、アクリル樹脂、ポリエステル樹脂、ポリエチレン樹脂、ポリエーテルスルホン樹脂、ポリエーテルイミド樹脂、ポリビニルアセタール樹脂、ウレタン樹脂、アクリルゴム等が挙げられ、その中でも耐熱性およびフィルム形成性に優れるエポキシ樹脂、フェノキシ樹脂、ポリイミド樹脂、アクリル樹脂、アクリルゴム、シアネートエステル樹脂、ポリカルボジイミド樹脂等が好ましく、さらに耐熱性、フィルム形成性に優れるエポキシ樹脂、フェノキシ樹脂、ポリイミド樹脂、アクリル樹脂、アクリルゴムがより好ましい。これらの高分子成分は単独又は２種以上の混合体又は共重合体として用いることもできる。重量平均分子量１００００以上の高分子成分は、硬化剤と反応する熱硬化性樹脂であってもよい。 <High molecular weight component having a weight average molecular weight of 10,000 or more>
Polymer components having a weight average molecular weight of 10,000 or more are epoxy resin, phenoxy resin, polyimide resin, polyamide resin, polycarbodiimide resin, cyanate ester resin, acrylic resin, polyester resin, polyethylene resin, polyethersulfone resin, polyetherimide resin, Polyvinyl acetal resin, urethane resin, acrylic rubber, etc. are mentioned, among which epoxy resin, phenoxy resin, polyimide resin, acrylic resin, acrylic rubber, cyanate ester resin, polycarbodiimide resin, etc. excellent in heat resistance and film formability are preferable, Furthermore, an epoxy resin, a phenoxy resin, a polyimide resin, an acrylic resin, and an acrylic rubber that are excellent in heat resistance and film formability are more preferable. These polymer components can be used alone or as a mixture or copolymer of two or more. The polymer component having a weight average molecular weight of 10,000 or more may be a thermosetting resin that reacts with a curing agent.
　高分子成分と上述のエポキシ樹脂との質量比は、特に制限されない。接着剤がフィルム状の形態を保持するために、高分子成分に対するエポキシ樹脂の質量比は、好ましくは０．０１～５、０．０５～４、又は０．１～３である。この質量比が０．０１より小さいと硬化性が低下し、接着力が低下する可能性がある。この質量比が５より大きいと、フィルム形成性が低下する可能性がある。 The mass ratio between the polymer component and the above-described epoxy resin is not particularly limited. In order to maintain the film form of the adhesive, the mass ratio of the epoxy resin to the polymer component is preferably 0.01 to 5, 0.05 to 4, or 0.1 to 3. When this mass ratio is smaller than 0.01, curability is lowered and adhesive strength may be lowered. When this mass ratio is larger than 5, film formability may be lowered.
　高分子成分とアクリル樹脂の質量比は、特に制限されない。高分子成分に対するアクリル樹脂の質量比は、０．０１～１０が好ましく、０．０５～５がより好ましく、０．１～５が更に好ましい。この質量比が０．０１より小さいと硬化性が低下し、接着力が低下する可能性がある。この質量比が１０より大きいと、フィルム形成性が低下する可能性がある。 The mass ratio of the polymer component and the acrylic resin is not particularly limited. The mass ratio of the acrylic resin to the polymer component is preferably 0.01 to 10, more preferably 0.05 to 5, and still more preferably 0.1 to 5. When this mass ratio is smaller than 0.01, curability is lowered and adhesive strength may be lowered. If this mass ratio is greater than 10, film formability may be reduced.
　高分子成分のガラス転移温度（Ｔｇ）は、接着剤の基板又は半導体チップへの貼付性に優れる観点から、１２０℃以下が好ましく、１００℃以下がより好ましく、８５℃以下が更に好ましい。高分子成分のＴｇが１２０℃を超えると、半導体チップのバンプ、基板に形成された電極及び配線パターン等の凹凸を接着剤により埋め込むことが難しくなるため、ボイド抑制の効果が相対的に小さくなる可能性がある。ここでのＴｇは、ＤＳＣ（（株）パーキンエルマー製、ＤＳＣ－７型）を用いて、サンプル量１０ｍｇ、昇温速度１０℃／分、空気雰囲気下の条件で測定されるＴｇである。 The glass transition temperature (Tg) of the polymer component is preferably 120 ° C. or less, more preferably 100 ° C. or less, and still more preferably 85 ° C. or less, from the viewpoint of excellent adhesiveness of the adhesive to the substrate or semiconductor chip. If the Tg of the polymer component exceeds 120 ° C., it becomes difficult to embed irregularities such as bumps on the semiconductor chip, electrodes formed on the substrate and wiring patterns with an adhesive, so the effect of suppressing voids becomes relatively small. there is a possibility. Here, Tg is Tg measured using DSC (manufactured by PerkinElmer Co., Ltd., DSC-7 type) under conditions of a sample amount of 10 mg, a heating rate of 10 ° C./min, and an air atmosphere.
　高分子成分の重量平均分子量は、１００００以上である。単独で良好なフィルム形成性を示すために、高分子成分の重量平均分子量は３００００以上が好ましく、４００００以上がより好ましく、５００００以上が更に好ましい。なお、本明細書において、重量平均分子量とは、ゲル浸透クロマトグラフィー（ＧＰＣ）で測定される、標準ポリスチレン換算の値を意味する。 The weight average molecular weight of the polymer component is 10,000 or more. In order to show good film-forming property independently, the weight average molecular weight of the polymer component is preferably 30000 or more, more preferably 40000 or more, and still more preferably 50000 or more. In the present specification, the weight average molecular weight means a value in terms of standard polystyrene measured by gel permeation chromatography (GPC).
　接着剤は、フラックス成分、すなわち、フラックス活性（酸化物及び不純物を除去する活性）を示す化合物であるフラックス活性剤を含有することができる。フラックス活性剤としては、イミダゾール類及びアミン類のように非共有電子対を有する含窒素化合物、カルボン酸類、フェノール類及びアルコール類が挙げられる。アルコール等に比べて有機酸の方がフラックス活性を強く発現し、接続性が向上する。 The adhesive may contain a flux component, that is, a flux activator that is a compound exhibiting flux activity (activity for removing oxides and impurities). Examples of the flux activator include nitrogen-containing compounds having lone pairs such as imidazoles and amines, carboxylic acids, phenols, and alcohols. Compared with alcohol etc., the organic acid expresses flux activity more strongly and the connectivity is improved.
　粘度及び硬化物の物性を制御するため、並びに、半導体チップ同士又は半導体チップと基板とを接続した際のボイドの発生及び吸湿率の抑制のために、接着剤にフィラを配合してもよい。絶縁性無機フィラとしては、例えば、ガラス、シリカ、アルミナ、酸化チタン、カーボンブラック、マイカ、窒化ホウ素等が挙げられる。これらの中でも、シリカ、アルミナ、酸化チタン、窒化ホウ素が好ましく、シリカ、アルミナ、窒化ホウ素がより好ましい。ウィスカーとしては、ホウ酸アルミニウム、チタン酸アルミニウム、酸化亜鉛、珪酸カルシウム、硫酸マグネシウム、窒化ホウ素等が挙げられる。樹脂フィラとしては、ポリウレタン、ポリイミド、メタクリル酸メチル樹脂、メタクリル酸メチル－ブタジエン－スチレン共重合樹脂（ＭＢＳ）、などを用いることができる。これらのフィラおよびウィスカーは単独又は２種以上の混合体として用いることもできる。フィラの形状、粒径、および配合量については、特に制限されない。 Filler may be blended in the adhesive to control the viscosity and physical properties of the cured product, and to suppress void generation and moisture absorption when the semiconductor chips or between the semiconductor chip and the substrate are connected. Examples of the insulating inorganic filler include glass, silica, alumina, titanium oxide, carbon black, mica, and boron nitride. Among these, silica, alumina, titanium oxide, and boron nitride are preferable, and silica, alumina, and boron nitride are more preferable. Examples of whiskers include aluminum borate, aluminum titanate, zinc oxide, calcium silicate, magnesium sulfate, and boron nitride. As the resin filler, polyurethane, polyimide, methyl methacrylate resin, methyl methacrylate-butadiene-styrene copolymer resin (MBS), or the like can be used. These fillers and whiskers can be used alone or as a mixture of two or more. There is no particular limitation on the shape, particle size, and blending amount of the filler.
　樹脂フィラは無機フィラに比べて、２６０℃等の高温で柔軟性を付与することができるため、耐リフロ性向上に適している。また、柔軟性付与のため、フィルム形成性向上にも効果がある。 Resin fillers are suitable for improving reflow resistance because they can impart flexibility at high temperatures such as 260 ° C. compared to inorganic fillers. Moreover, since flexibility is imparted, it is also effective in improving film formability.
　絶縁信頼性の観点から、フィラは絶縁性であることが好ましい。銀フィラ、はんだフィラ等導電性の金属フィラは含有していない半導体接着剤が好ましい。 From the viewpoint of insulation reliability, the filler is preferably insulating. A semiconductor adhesive containing no conductive metal filler such as silver filler or solder filler is preferred.
　分散性及び接着力向上の観点から、表面処理フィラが好ましい。表面処理としては、グリシジル系（エポキシ系）、アミン系、フェニル系、フェニルアミノ系また、（メタ）アクリル系、ビニル系が挙げられる。分散性、流動性、接着力の観点から、グリシジル系、フェニルアミノ系、（メタ）アクリル系が好ましい。保存安定性の観点から、フェニル系、アクリル系、（メタ）アクリル系が更に好ましい。表面処理のし易さから、シラン処理（エポキシシラン系、アミノシラン系、アクリルシラン系等）が好ましい。 From the viewpoint of improving dispersibility and adhesive strength, a surface-treated filler is preferable. Examples of the surface treatment include glycidyl (epoxy), amine, phenyl, phenylamino, (meth) acrylic, and vinyl. From the viewpoints of dispersibility, fluidity, and adhesive strength, glycidyl, phenylamino, and (meth) acrylic are preferred. From the viewpoint of storage stability, phenyl, acrylic, and (meth) acrylic are more preferable. From the viewpoint of ease of surface treatment, silane treatment (epoxy silane, amino silane, acrylic silane, etc.) is preferred.
　これらのフィラおよびウィスカーは単独又は２種以上の混合体として用いることもできる。フィラの形状、粒径、および配合量については、特に制限されない。また、表面処理によって物性を適宜調整してもよい。 These fillers and whiskers can be used alone or as a mixture of two or more. There is no particular limitation on the shape, particle size, and blending amount of the filler. Further, the physical properties may be appropriately adjusted by surface treatment.
　フィラの平均粒径は、フリップチップ接続時のかみ込み防止の観点から、１．５μｍ以下が好ましく、視認性及び透明性の観点から、１．０μｍ以下がさらに好ましい。 The average particle diameter of the filler is preferably 1.5 μm or less from the viewpoint of preventing biting during flip chip connection, and more preferably 1.0 μm or less from the viewpoint of visibility and transparency.
　フィラの含有量は、接着剤の固形分質量（溶剤以外の成分の質量）を基準として、３０～９０質量％が好ましく、４０～８０質量％がより好ましい。フィラの含有量が３０質量％未満では放熱性が低く、また、ボイド発生、吸湿率が大きくなる傾向がある。フィラの含有量が９０質量％を超えると接着剤の粘度が高くなって、流動性の低下、接続部へのフィラの噛み込み（トラッピング）が生じ、接続信頼性が低下する傾向がある。 The filler content is preferably 30 to 90% by mass, more preferably 40 to 80% by mass, based on the solid content of the adhesive (the mass of components other than the solvent). When the filler content is less than 30% by mass, heat dissipation is low, and void generation and moisture absorption tend to increase. When the filler content exceeds 90% by mass, the viscosity of the adhesive increases, resulting in a decrease in fluidity and a trapping (trapping) of the filler into the connection portion, which tends to decrease connection reliability.
　接着剤は、イオントラッパー、酸化防止剤、シランカップリング剤、チタンカップリング剤、レベリング剤を含んでもよい。これらは１種を単独で用いてもよいし、２種以上組み合わせて用いてもよい。これらの配合量については、各添加剤の効果が発現するように適宜調整すればよい。 The adhesive may contain an ion trapper, an antioxidant, a silane coupling agent, a titanium coupling agent, and a leveling agent. These may be used singly or in combination of two or more. About these compounding quantities, what is necessary is just to adjust suitably so that the effect of each additive may express.
　接着剤はフィルム状であることが好ましい。フィルム状であると生産性が向上する。フィルム状接着剤（フィルム状）の作製方法を以下に示す。 The adhesive is preferably in the form of a film. Productivity improves that it is a film form. A method for producing a film-like adhesive (film-like) is shown below.
　熱硬化性樹脂、硬化剤、高分子成分、フィラ、その他添加剤等を有機溶媒中に加え、攪拌混合、混錬などにより、溶解又は分散させて、樹脂ワニスを調製する。樹脂ワニスを、離型処理を施した基材フィルム上に、樹脂ワニスをナイフコーター、ロールコーターやアプリケーター、ダイコーター、コンマコーターを用いて塗布した後、加熱により有機溶媒を減少させて、基材フィルム上にフィルム状接着剤を形成する。また、加熱により有機溶媒を減少させる前に、樹脂ワニスをウエハ等にスピンコートして膜を形成して、その後、溶媒乾燥を行う方法で、ウエハ上にフィルム状接着剤を形成してもよい。 A thermosetting resin, a curing agent, a polymer component, filler, other additives and the like are added to an organic solvent, and dissolved or dispersed by stirring, mixing, kneading, etc. to prepare a resin varnish. Resin varnish is applied onto a base film that has been subjected to a mold release treatment using a knife coater, roll coater, applicator, die coater, or comma coater, and then the organic solvent is reduced by heating. A film adhesive is formed on the film. Further, before the organic solvent is reduced by heating, a film adhesive may be formed on the wafer by spin coating a resin varnish on a wafer or the like to form a film and then drying the solvent. .
　基材フィルムとしては、有機溶媒を揮発させる際の加熱条件に耐え得る耐熱性を有するものであれば特に制限はなく、ポリエステルフィルム、ポリプロピレンフィルム、ポリエチレンテレフタレートフィルム、ポリイミドフィルム、ポリエーテルイミドフィルム、ポリエーテルナフタレートフィルム、メチルペンテンフィルム等が例示できる。基材フィルムは、これらのフィルムからなる単層のものに限られず、２種以上の材料からなる多層フィルムであってもよい。 The base film is not particularly limited as long as it has heat resistance capable of withstanding the heating conditions when the organic solvent is volatilized. The polyester film, the polypropylene film, the polyethylene terephthalate film, the polyimide film, the polyetherimide film, the poly Examples include ether naphthalate films and methylpentene films. The base film is not limited to a single layer made of these films, and may be a multilayer film made of two or more materials.
　塗布後の樹脂ワニスから有機溶媒を揮発させる際の条件は、具体的には、５０～２００℃、０．１～９０分間の加熱を行うことが好ましい。実装後のボイドや粘度調製に影響がなければ、有機溶媒が１．５％以下まで揮発する条件とすることが好ましい。 Specifically, the conditions for volatilizing the organic solvent from the applied resin varnish are preferably heating at 50 to 200 ° C. for 0.1 to 90 minutes. As long as there is no influence on the void and viscosity adjustment after mounting, it is preferable that the organic solvent volatilizes to 1.5% or less.
　以下、実施例を挙げて本発明についてさらに具体的に説明する。ただし、本発明はこれら実施例に限定されるものではない。 Hereinafter, the present invention will be described more specifically with reference to examples. However, the present invention is not limited to these examples.
（１）フィルム状接着剤
　表１に示す組成を有するフィルム状接着剤を作製した。 (1) Film adhesive The film adhesive which has a composition shown in Table 1 was produced.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
　表中の各原材料の詳細は以下のとおりである。
（ｉ）熱硬化性樹脂（重量平均分子量（Ｍｗ）が１００００未満）
エポキシ樹脂
ＥＰ１０３２Ｈ６０：トリフェノールメタン骨格含有多官能固形エポキシ樹脂（三菱化学株式会社製、重量平均分子量：８００～２０００）
ＹＬ９８３Ｕ：ビスフェノールＦ型液状エポキシ樹脂（三菱化学株式会社製、分子量：約３３６）
ＹＬ７１７５－１０００：可とう性半固形状エポキシ樹脂（三菱化学株式会社製、重量平均分子量：１０００～５０００）
（ｉｉ）硬化剤
２ＭＡＯＫ－ＰＷ：２，４－ジアミノ－６－［２’－メチルイミダゾリル－（１’）］－エチル－ｓ－トリアジンイソシアヌル酸付加体（四国化成株式会社製）
（ｉｉｉ）重量平均分子量（Ｍｗ）１００００以上の高分子成分
ＺＸ１３５６－２：フェノキシ樹脂（東都化成株式会社、ガラス転移温度：約７１℃、重量平均分子量：約６３０００）
（ｉｖ）フラックス剤（カルボン酸）
２－メチルグルタル酸（アルドリッチ社製、融点：約７７℃）
（ｖ）フィラ
無機フィラ
ＳＥ２０５０：シリカフィラ（株式会社アドマテックス製、平均粒径０．５μｍ）
ＹＡ０５０Ｃ－ＳＰ：フェニル表面処理ナノシリカフィラ（株式会社アドマテックス、平均粒径：約５０ｎｍ）
樹脂フィラ
ＥＸＬ－２６５５：有機フィラ（ロームアンドハースジャパン株式会社製、コアシェルタイプ有機微粒子）
（ｖｉ）添加材
ＦＣＡ１０７：固形シラノール（東レダウコーニング株式会社製、重量平均分子量：約３０００） The details of each raw material in the table are as follows.
(I) Thermosetting resin (weight average molecular weight (Mw) is less than 10,000)
Epoxy resin EP1032H60: polyfunctional solid epoxy resin containing triphenolmethane skeleton (Mitsubishi Chemical Corporation, weight average molecular weight: 800 to 2000)
YL983U: Bisphenol F type liquid epoxy resin (Mitsubishi Chemical Corporation, molecular weight: about 336)
YL7175-1000: A flexible semi-solid epoxy resin (Mitsubishi Chemical Corporation, weight average molecular weight: 1000 to 5000)
(Ii) Curing agent 2MAOK-PW: 2,4-diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl-s-triazine isocyanuric acid adduct (manufactured by Shikoku Kasei Co., Ltd.)
(Iii) Polymer component ZX1356-2 having a weight average molecular weight (Mw) of 10,000 or more: Phenoxy resin (Toto Kasei Co., Ltd., glass transition temperature: about 71 ° C., weight average molecular weight: about 63000)
(Iv) Flux agent (carboxylic acid)
2-Methylglutaric acid (Aldrich, melting point: about 77 ° C)
(V) Filler inorganic filler SE2050: Silica filler (manufactured by Admatechs Co., Ltd., average particle size 0.5 μm)
YA050C-SP: Phenyl surface-treated nano silica filler (Admatex Co., Ltd., average particle size: about 50 nm)
Resin filler EXL-2655: Organic filler (made by Rohm and Haas Japan, core-shell type organic fine particles)
(Vi) Additive FCA107: solid silanol (manufactured by Toray Dow Corning Co., Ltd., weight average molecular weight: about 3000)
（２）半導体装置の作製
（仮圧着工程）
　上記で作製したフィルム状接着剤を８ｍｍ四方、厚さ０．０４５ｍｍのサイズに切り抜き、これを半導体チップ（１０ｍｍ、厚さ０．１ｍｍ厚、接続部金属：Ａｕ、製品名：ＷＡＬＴＳ－ＴＥＧ　ＩＰ８０、株式会社ウォルツ製）上に貼付した。そこに、はんだバンプ付き半導体チップ（チップサイズ：７．３ｍｍ×７．３ｍｍ、厚さ０．０５ｍｍ、バンプ（接続部）高さ：約４５μｍ（銅ピラーとはんだの合計）、バンプ数：１０４８ピン、ピッチ８０μｍ、製品名：ＷＡＬＴＳ－ＴＥＧ　ＣＣ８０、株式会社ウォルツ製）を、フリップチップボンダー（ＦＣＢ３、パナソニック株式会社製）で加熱及び加圧することにより仮圧着した。仮圧着の条件は、１３０℃、７５Ｎ、２秒とした。 (2) Fabrication of semiconductor device (temporary crimping process)
The film-like adhesive produced above was cut into a size of 8 mm square and 0.045 mm thick, and this was cut into a semiconductor chip (10 mm, thickness 0.1 mm, connection metal: Au, product name: WALTS-TEG IP80, It was affixed on (Walts). There, a semiconductor chip with solder bumps (chip size: 7.3 mm × 7.3 mm, thickness 0.05 mm, bump (connection part) height: about 45 μm (total of copper pillars and solder), number of bumps: 1048 pins , Pitch 80 μm, product name: WALTS-TEG CC80 (manufactured by Waltz Co., Ltd.) was subjected to temporary pressure bonding by heating and pressurizing with a flip chip bonder (FCB3, manufactured by Panasonic Corporation). The conditions for temporary pressure bonding were 130 ° C., 75 N, and 2 seconds.
（本圧着工程）
　仮圧着後の積層体（仮圧着体）を以下の条件で加熱及び加圧することにより、半導体チップの接続部同士を接合して接続評価用のサンプルを作製した。
（実施例１）
・装置：加圧式リフロ装置（ＶＳＵ２８、株式会社シンアペックス製）
・加熱温度／時間：１７０℃／５分、２６０℃／５分の順で加熱
・圧力：０．４ＭＰａ（気圧）
（実施例２）
・装置：加圧式リフロ装置（ＶＳＵ２８、株式会社シンアペックス製）
・加熱温度／時間：２６０度／５分
・圧力：０．４ＭＰａ（気圧）
（比較例１）
・装置：オーブン（ＤＫＮ４０２、ヤマト科学株式会社製）
・加熱温度／時間：１７０度／５分、２６０度／５分の順で加熱
・圧力：大気圧
（比較例２）
・装置：オーブン（ＤＫＮ４０２、ヤマト科学株式会社製）
・加熱温度／時間：２６０度／５分
・圧力：大気圧 (Main crimping process)
By heating and pressurizing the laminated body (temporary pressure bonded body) after the temporary pressure bonding under the following conditions, the connection portions of the semiconductor chips were joined to prepare a sample for connection evaluation.
Example 1
・ Device: Pressurized reflow device (VSU28, manufactured by Shin Apex Co., Ltd.)
・ Heating temperature / time: 170 ° C / 5 minutes, 260 ° C / 5 minutes in order · Pressure: 0.4 MPa (atmospheric pressure)
(Example 2)
・ Device: Pressurized reflow device (VSU28, manufactured by Shin Apex Co., Ltd.)
・ Heating temperature / time: 260 degrees / 5 minutes ・ Pressure: 0.4 MPa (atmospheric pressure)
(Comparative Example 1)
・ Device: Oven (DKN402, manufactured by Yamato Scientific Co., Ltd.)
・ Heating temperature / time: 170 degrees / 5 minutes, heating in order of 260 degrees / 5 minutes ・ Pressure: atmospheric pressure (Comparative Example 2)
・ Device: Oven (DKN402, manufactured by Yamato Scientific Co., Ltd.)
・ Heating temperature / time: 260 degrees / 5 minutes ・ Pressure: atmospheric pressure
（２）接続評価
　本圧着後の上記サンプルに関して、マルチメータ（Ｒ６８７１Ｅ、株式会社エーディーシー製）を用いて初期導通の可否を測定した。ペリフェラル部分の内周の初期接続抵抗値が４５Ω以下、外周の初期接続抵抗値が８５Ω以下であるサンプルを「Ａ」、それよりも高い抵抗値又は未接続のサンプルを「Ｂ」とした。 (2) Connection evaluation Regarding the sample after the final pressure bonding, whether or not initial conduction was possible was measured using a multimeter (R6871E, manufactured by ADC Corporation). A sample having an initial connection resistance value of 45Ω or less and an outer periphery initial connection resistance value of 85Ω or less of the peripheral portion was designated as “A”, and a sample having a higher resistance value or no connection was designated as “B”.
（３）ボイド評価
　本圧着後の上記サンプルの外観画像を、超音波映像診断装置（Ｉｎｓｉｇｈｔ－３００、インサイト株式会社製）によって撮影した。得られた画像から、スキャナ（ＧＴ－９３００ＵＦ、セイコーエプソン株式会社製）でチップ間の接着剤層の画像を取り込んだ。取り込んだ画像において、画像処理ソフト（Ａｄｏｂｅ　Ｐｈｏｔｏｓｈｏｐ（商品名））を用いて、色調補正、二階調化によりボイド部分を識別し、ヒストグラムによりボイド部分の占める割合を算出した。ボイド部分を含む接着層全体の面積を１００面積％とした。ボイドの面積割合が５％以下を「Ａ」とし、ボイドの面積割合が５５％より多い場合を「Ｂ」とした。表２に評価結果を示す。 (3) Void Evaluation The appearance image of the sample after the final press bonding was taken with an ultrasonic diagnostic imaging apparatus (Insight-300, manufactured by Insight Co., Ltd.). From the obtained image, an image of the adhesive layer between the chips was captured by a scanner (GT-9300UF, manufactured by Seiko Epson Corporation). In the captured image, the void portion was identified by color tone correction and two-gradation using image processing software (Adobe Photoshop (trade name)), and the ratio of the void portion was calculated by the histogram. The area of the entire adhesive layer including the void portion was 100% by area. A case where the void area ratio was 5% or less was designated as “A”, and a case where the void area ratio was greater than 55% was designated as “B”. Table 2 shows the evaluation results.
Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000002
　本圧着時に気圧による加圧を伴う本発明の製造方法によれば、ボイド抑制と接続確保の両立が可能であることが確認された。 According to the manufacturing method of the present invention that involves pressurization by atmospheric pressure at the time of final press-bonding, it has been confirmed that both suppression of voids and securing of connection are possible.
　１…半導体チップ、２…基板、１０…半導体チップ本体、１５，１６…配線、２０…基板本体、３０，３２，３３…バンプ、３４…貫通電極、４０…接着剤層、５０…インターポーザー本体、１００，２００，３００，４００，５００…半導体装置。 DESCRIPTION OF SYMBOLS 1 ... Semiconductor chip, 2 ... Substrate, 10 ... Semiconductor chip main body, 15, 16 ... Wiring, 20 ... Substrate main body, 30, 32, 33 ... Bump, 34 ... Through electrode, 40 ... Adhesive layer, 50 ... Interposer main body , 100, 200, 300, 400, 500... Semiconductor devices.

Claims (6)

  1. 　接続部を有する第一の部材と接続部を有する第二の部材とを、接着剤を介して、前記第一の部材の接続部の融点及び前記第二の部材の接続部の融点よりも低い温度で仮圧着することによって、前記第一の部材の接続部と前記第二の部材の接続部とが対向配置されている仮圧着体を得る工程と、
    　前記仮圧着体を、気圧によって加圧しながら、前記第一の部材の接続部又は前記第二の部材の接続部のうち少なくとも一方の融点以上の温度に加熱し、それによって対向配置された前記接続部同士を電気的に接続されるように接合する工程と、
    を備え、
    　前記第一の部材が半導体チップ又は半導体ウエハで、前記第二の部材が配線回路基板、半導体チップ又は半導体ウエハである、
    半導体装置の製造方法。     The first member having the connection part and the second member having the connection part are lower than the melting point of the connection part of the first member and the melting point of the connection part of the second member via an adhesive. A step of obtaining a temporary pressure-bonded body in which the connection portion of the first member and the connection portion of the second member are arranged opposite to each other by temporary pressure bonding at a temperature;
    While pressing the temporary pressure-bonded body with atmospheric pressure, the connection is disposed oppositely by heating to a temperature equal to or higher than the melting point of at least one of the connection part of the first member or the connection part of the second member. Joining the parts so as to be electrically connected;
    With
    The first member is a semiconductor chip or a semiconductor wafer, and the second member is a printed circuit board, a semiconductor chip or a semiconductor wafer.
    A method for manufacturing a semiconductor device.
  2. 　前記接着剤が、重量平均分子量１００００未満の熱硬化性樹脂、及びその硬化剤を含有する、請求項１に記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to claim 1, wherein the adhesive contains a thermosetting resin having a weight average molecular weight of less than 10,000 and a curing agent thereof.
  3. 　前記接着剤が、重量平均分子量１００００以上の高分子成分を更に含有する、請求項２に記載の半導体装置の製造方法。 3. The method of manufacturing a semiconductor device according to claim 2, wherein the adhesive further contains a polymer component having a weight average molecular weight of 10,000 or more.
  4. 　前記高分子成分の重量平均分子量が３００００以上で、前記高分子成分のガラス転移温度が１００℃以下である、請求項３に記載の半導体装置の製造方法。 4. The method of manufacturing a semiconductor device according to claim 3, wherein the polymer component has a weight average molecular weight of 30000 or more and a glass transition temperature of the polymer component is 100 ° C. or less.
  5. 　前記接着剤がフィルム状接着剤である、請求項１～４のいずれか一項に記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to any one of claims 1 to 4, wherein the adhesive is a film adhesive.
  6. 　請求項１～５のいずれか一項に記載の製造方法によって得られる、半導体装置。 A semiconductor device obtained by the manufacturing method according to any one of claims 1 to 5.
PCT/JP2018/016280 2017-04-21 2018-04-20 Semiconductor device, and method for manufacturing same WO2018194156A1 (en)

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