WO2018192169A1 - Oled封装结构、oled封装方法及显示面板 - Google Patents

Oled封装结构、oled封装方法及显示面板 Download PDF

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Publication number
WO2018192169A1
WO2018192169A1 PCT/CN2017/102989 CN2017102989W WO2018192169A1 WO 2018192169 A1 WO2018192169 A1 WO 2018192169A1 CN 2017102989 W CN2017102989 W CN 2017102989W WO 2018192169 A1 WO2018192169 A1 WO 2018192169A1
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Prior art keywords
oled
substrate
layer
cover layer
inorganic
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PCT/CN2017/102989
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English (en)
French (fr)
Inventor
肖昂
杨晓东
李国伟
孙泉钦
张杨扬
吴虹见
马超
卢冠宇
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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Priority to US16/089,804 priority Critical patent/US11245091B2/en
Publication of WO2018192169A1 publication Critical patent/WO2018192169A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present disclosure relates to the field of semiconductor packaging, and in particular, to an OLED package structure, an OLED package method, and a display panel.
  • OLEDs Organic light-emitting diodes
  • OLEDs are display illumination devices that have received increasing attention in recent years, and their features of flexible display are particularly favored by people.
  • OLED devices are damaged by corrosion under the action of water vapor and oxygen, current OLED devices require protection of the package structure.
  • the OLED is usually packaged by a thin film encapsulation technique.
  • conventional thin film packaging techniques require a variety of different packaging equipment, which are generally more expensive to manufacture and require complex and lengthy processes.
  • the present disclosure proposes an OLED package structure, an OLED packaging method, and a display panel.
  • an OLED package structure includes: a substrate having an OLED structure to be packaged on a surface thereof; an inorganic cover layer disposed on the substrate and the OLED structure such that an edge portion of the surface is covered by an inorganic cover layer; a barrier layer, Arranged on the inorganic cover layer by a bonding structure.
  • the portion of the bonding structure on the edge portion includes at least one rib, the rib being located between the inorganic cover layer and the barrier layer and/or between the substrate and the barrier layer To form an airtight space between the inorganic cover layer and the barrier layer and/or an airtight space between the substrate and the barrier layer.
  • the airtight space is filled with an inert gas or nitrogen.
  • a portion of the inorganic cover layer on the edge portion has at least one channel.
  • the channel corresponds to a ridge in the bonding structure.
  • the ribs are inserted into the respective channels such that the ends of the ribs are in contact with the bottom of the channel.
  • the bottom of the channel is the substrate.
  • the OLED package structure further includes an edge seal.
  • the edge seal is disposed between an edge of the inorganic cover layer and an edge of the barrier layer and outside of the bonding structure.
  • the edge portion is a rectangular annular structure located at an edge of the substrate.
  • an OLED packaging method includes: providing a substrate, an OLED structure to be packaged on a surface of the substrate; forming an inorganic cover layer on the substrate and the OLED structure such that an edge portion of the surface is covered by the inorganic cover layer; The structure places a barrier layer on the inorganic cover layer.
  • the portion of the bonding structure on the edge portion includes at least one rib, the rib being located between the inorganic cover layer and the barrier layer and/or between the substrate and the barrier layer To form an airtight space between the inorganic cover layer and the barrier layer and/or an airtight space between the substrate and the barrier layer.
  • the airtight space is filled with an inert gas or nitrogen.
  • the step of forming an inorganic cap layer on the substrate and the OLED structure further comprises forming at least one channel in a portion of the inorganic cap layer located on the edge portion.
  • the channel corresponds to a ridge in the bonding structure such that the rib can be inserted into a corresponding channel and the end of the rib can be in contact with the bottom of the channel.
  • the channel extends through the inorganic cover layer such that the bottom of the channel is the substrate.
  • the OLED packaging method further includes: providing an edge seal between an edge of the inorganic cover layer and an edge of the barrier layer such that the edge seal is on an outer side of the adhesive structure .
  • the edge portion is a rectangular annular structure located at an edge of the substrate.
  • the step of disposing the barrier layer on the inorganic cover layer by the bonding structure comprises: forming a bonding structure on the surface of the barrier layer; and bonding the bonding structure to the inorganic coating layer and/or the base
  • the plate is such that the barrier layer is disposed on the inorganic cover layer and/or the substrate.
  • a display panel is proposed.
  • the display panel includes the OLED package structure according to any of the above embodiments.
  • Figure 1 shows an OLED package structure
  • FIG. 2 illustrates an OLED package structure in accordance with an embodiment of the present disclosure
  • FIG. 3 illustrates a flow chart of an OLED packaging method in accordance with an embodiment of the present disclosure
  • FIG. 4 illustrates an OLED package structure in accordance with another embodiment of the present disclosure
  • FIG. 5 illustrates a flow chart of an OLED packaging method in accordance with another embodiment of the present disclosure
  • FIG. 6 illustrates an OLED package structure in accordance with yet another embodiment of the present disclosure
  • FIG. 7 illustrates a flow chart of an OLED packaging method in accordance with yet another embodiment of the present disclosure.
  • FIG. 1 illustrates an OLED package structure 100 of an embodiment of the present disclosure.
  • the OLED package structure 100 includes a substrate 110, a plurality of inorganic layers 120 and an organic layer 130 alternately stacked in this order from bottom to top.
  • An OLED structure to be packaged is disposed on the substrate 110.
  • the first inorganic layer 120 disposed on the substrate 110 encapsulates the OLED structure on the substrate 110, and then the respective organic layer 130 and the inorganic layer 120 are stacked on the first inorganic layer 120 layer by layer, and the packaged OLED structure is further processed. Protection.
  • the inorganic layer 120 is typically completed by a plasma enhanced chemical vapor deposition (PECVD) apparatus, the materials of which include, but are not limited to, SiNx, SiON, or a combination of both.
  • PECVD plasma enhanced chemical vapor deposition
  • the organic layer 130 is typically completed by an evaporation machine, a printing press, or an inkjet printing device.
  • the material of the organic layer 130 may be a polymerizable organic monomer such as acryl, epoxy resin, silicone resin or a combination thereof. It can be seen that the implementation of the OLED package structure 100 needs to provide multiple devices and requires a relatively long packaging process, which increases the production cost to some extent.
  • FIG. 2 illustrates a cross-sectional view of an OLED package structure 200 in accordance with an embodiment of the present disclosure.
  • the OLED package structure 200 includes a substrate 210, an inorganic cover layer 220, a barrier layer 230, and a bonding structure 240.
  • An OLED structure to be packaged is disposed on a surface of the substrate 210 (eg, the upper surface in FIG. 2).
  • the surface of the substrate 210 may be exemplarily divided into a central region and an edge region.
  • the central region may correspond to an area in which the OLED structure is placed.
  • the edge region can refer to a region within a certain distance from the edge of the substrate 210.
  • the OLED structure to be packaged is located in the central region. It should be noted that the introduction of the central area and the edge area is only for the convenience of describing and explaining the technical solutions of the present application, and does not impose any limitation on the structure involved in the present application. It should be understood by those skilled in the art that the present application does not need to define the boundary between the central area and the edge area. According to different needs, those skilled in the art can adjust the boundary accordingly to facilitate the implementation of the technical solution.
  • the central region is rectangular in shape and the edge region is rectangular in shape. In other embodiments, the central region and the edge region may also have other shapes as desired.
  • the OLED structure on the substrate generally includes an OLED light emitting unit layer, a driving array layer, and the like, and its structure is not limited herein.
  • the inorganic cover layer 220 is disposed on the substrate 210 and the OLED structure. Specifically, the inorganic cover layer 220 covers the OLED structure, and the edge portion of the surface of the substrate 210 is covered by the inorganic cover layer, that is, the OLED structure is sealed between the inorganic cover layer 220 and the substrate 210.
  • the inorganic cover layer 220 serves as a basic water-oxygen barrier film layer, and its materials include, but are not limited to, SiNx, SiON, or a combination of both, which can be realized by a PECVD apparatus.
  • a barrier layer 230 for further blocking water oxygen is included in the OLED package structure 200.
  • the barrier layer 230 is disposed on the inorganic cover layer 220 by the bonding structure 240.
  • Barrier layer 230 can be implemented as a single film layer.
  • the barrier layer 230 may be the same or similar inorganic layer as the inorganic cap layer (implemented by a PECVD device), or may be an inorganic layer deposited by other devices, such as by atomic layer deposition, sputter deposition, vapor deposition, etc. .
  • the barrier layer 230 can also be implemented as a stacked structure including a plurality of layers.
  • the stacked structure may be a stack of a plurality of inorganic layers, or may be similar to the alternately stacked structure of the organic layer and the inorganic layer in FIG.
  • the barrier layer 230 is flexible to be more suitable for packaging an OLED structure.
  • the bonding structure 240 is composed of a plurality of portions including a central portion above the central region and an edge portion on the edge portion of the surface of the substrate 210, and the edge portion of the bonding structure 240 includes at least one rib.
  • the ridges are located between the inorganic cover layer 220 and the barrier layer 230, and together with the inorganic cover layer 220, the barrier layer 230 and the central portion of the bonding structure 240 form a plurality of airtight spaces (see the structure of FIG. 2 in the inorganic A blank fill area between the cover layer 220 and the barrier layer 230).
  • the formation of the airtight space can more effectively isolate the OLED structure from water and oxygen attack, so that even if the water vapor protection capability of the bonding structure 240 itself is weak, the OLED package structure 200 can be well treated. Protection of the packaged OLED structure.
  • the ribs are realized as a rectangular ring structure.
  • OLED package structure 200 may include a greater or lesser number of ribs.
  • the airtight space is filled with an inert gas or nitrogen. In another embodiment, the airtight space has a vacuum or a near vacuum state.
  • FIG. 3 shows a flow diagram of an OLED packaging method 300 corresponding to the OLED package structure 200 shown in FIG. 2.
  • a substrate eg, substrate 210) having an OLED structure to be packaged on a surface is first provided.
  • an inorganic cap layer (eg, inorganic cap layer 220) is formed over the substrate and OLED structure such that the edge portions of the surface are covered by the inorganic cap layer.
  • a barrier layer (eg, barrier layer 230) is disposed on the inorganic cover layer by a bonding structure (eg, bonding structure 240), wherein the bonding structure is located on the edge portion
  • the portion includes at least one rib that is positioned between the inorganic cover layer and the barrier layer to form an airtight space between the inorganic cover layer and the barrier layer.
  • the airtight space is filled with an inert gas or nitrogen.
  • step 330 a bonding structure is first formed on the surface of the barrier layer, and then the bonding structure is bonded to the inorganic cap layer such that the barrier layer is disposed on the inorganic cap layer.
  • the bonding structure may also be formed on the inorganic coating layer in step 330, and then the barrier layer is bonded to the bonding structure such that the barrier layer is disposed on the inorganic coating layer.
  • FIG. 4 illustrates an OLED package structure 400 in accordance with another embodiment of the present disclosure.
  • the OLED package structure 400 includes a substrate 410, an inorganic cover layer 420, a barrier layer 430, and a bonding structure 440.
  • the OLED package structure 400 differs from the OLED package structure 200 of FIG. 2 in the structure of the inorganic cover layer and the bond structure.
  • a portion of the inorganic cover layer 420 located on an edge portion of the surface of the substrate 410 has at least one channel.
  • the channel corresponds to a ridge in the bonding structure.
  • the ribs are inserted into the respective channels such that the ends of the ribs are in contact with the bottom of the channel.
  • the channel penetrates the inorganic cover layer 420 such that the bottom of the channel is the surface of the substrate 410. It should be understood that in other embodiments, the channel may not penetrate the inorganic cover layer 420.
  • the width of the channel is equal to (or slightly larger than) the width of the ribs such that the ribs can fill the channel completely (or nearly completely).
  • the OLED package structure 400 may include a greater or lesser number of ribs.
  • all of the ridges 440 are formed between the substrate 410 and the barrier layer 430, but the disclosure is not limited thereto.
  • portions of the ribs 440 may be formed between the inorganic cap layer 420 and the barrier layer 430 without channels, similar to the embodiment shown in FIG.
  • the ribs 440 proximate the inner side may be formed between the inorganic cap layer 420 and the barrier layer 430 without a channel, and the ribs 440 near the outer side may be formed at the bottom of the channel of the inorganic cap layer 420. Between the barrier layer 430.
  • the ribs 440 near the outer side may be formed between the substrate 410 and the barrier layer 430.
  • FIG. 5 shows a flow diagram of an OLED packaging method 500 corresponding to the OLED package structure 400 shown in FIG.
  • a substrate eg, substrate 410 having an OLED structure to be packaged on a surface is first provided.
  • an inorganic cap layer (eg, inorganic cap layer 420) is formed over the substrate and OLED structure such that the edge portions of the surface are covered by the inorganic cap layer.
  • step 530 at least one channel is formed in a portion of the inorganic cover layer on the edge portion, the channel corresponding to the ridge in the bonding structure, such that The ribs can be inserted into the respective channels and the ends of the ribs can be in contact with the bottom of the channel.
  • step 520 and step 530 are illustrated as separate steps in method 500, in other embodiments they may be implemented in a single step.
  • a barrier layer (eg, barrier layer 430) is disposed over the inorganic cover layer by a bonding structure (eg, bonding structure 440), wherein the bonding structure is located on the edge portion
  • the portion includes at least one rib that is positioned between the inorganic cover layer and the barrier layer to form an airtight space between the inorganic cover layer and the barrier layer.
  • step 540 a bonding structure is first formed on the surface of the barrier layer, and then the bonding structure is bonded to the inorganic cap layer such that the barrier layer is disposed on the inorganic cap layer.
  • the bonding structure may also be formed on the inorganic coating layer in step 540, and then the barrier layer is bonded to the bonding structure such that the barrier layer is disposed on the inorganic coating layer.
  • FIG. 6 illustrates an OLED package structure 600 in accordance with yet another embodiment of the present disclosure.
  • the OLED package structure 600 includes a substrate 610, an inorganic cover layer 620, a barrier layer 630, a bonding structure 640, and an edge sealant 650.
  • the OLED package structure 600 differs from the OLED package structure 400 of FIG. 4 in an edge seal 650.
  • the bonding structure 640 is not located at the outer edge of the package structure 600 as in the OLED package structure 400, but instead is a portion of the inorganic cover layer 620 and stacked thereon.
  • Edge seal 650 i.e., edge sealant 650, is disposed between the outer edge of the inorganic cover layer 620 and the outer edge of the barrier layer 630.
  • the edge sealant 650 is implemented by a dispenser or an immersion gluing device.
  • all of the ridges 640 are formed between the substrate 410 and the barrier layer 630, although the disclosure is not limited thereto.
  • a portion of the ribs 640 can be formed between the inorganic cap layer 620 without the channel and the barrier layer 630, similar to the embodiment shown in FIG.
  • the ribs 640 proximate the inner side may be formed between the inorganic cap layer 620 and the barrier layer 630 without a channel, and the ribs 640 near the outer side may be formed at the bottom of the channel of the inorganic cap layer 620. Between the barrier layer 630.
  • the ribs 640 near the outer side may be formed between the substrate 610 and the barrier layer 630.
  • FIG. 7 shows a flow diagram of an OLED packaging method 700 corresponding to the OLED package structure 600 shown in FIG.
  • a substrate eg, substrate 610 having an OLED structure to be packaged on the surface is first provided.
  • an inorganic cap layer (eg, inorganic cap layer 620) is formed over the substrate and OLED structure such that the edge portions of the surface are covered by the inorganic cap layer.
  • step 730 at least one channel is formed in a portion of the inorganic cover layer on the edge portion, the channel corresponding to the ridge in the bonding structure, such that The ribs can be inserted into the respective channels and the ends of the ribs can be in contact with the bottom of the channel.
  • step 720 and step 730 are illustrated as separate steps in method 700, in other embodiments they may be implemented in a single step.
  • a barrier layer (eg, barrier layer 630) is disposed on the inorganic cover layer by a bonding structure (eg, bonding structure 640), wherein the bonding structure is located on the edge portion
  • the portion includes at least one rib between the inorganic cover layer and the barrier layer to form an airtight space between the inorganic cover layer and the barrier layer.
  • an edge seal (eg, edge seal 650) is disposed between the outer edge of the inorganic cover layer and the outer edge of the barrier layer.
  • a bonding structure is first formed on the surface of the barrier layer, and then the bonding structure is bonded to the inorganic cap layer such that the barrier layer is disposed on the inorganic cap layer.
  • a bonding structure may also be formed on the inorganic cover layer in step 740, and then the barrier layer is bonded to the bonding structure such that the barrier layer is disposed on the inorganic cover layer.

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Abstract

一种OLED封装结构（200、400、600）、OLED封装方法（300、500、700）和显示面板，其中，所述OLED封装结构（200、400、600）包括：基板（210、410、610），所述基板（210、410、610）的表面上布置有待封装的OLED结构；无机覆盖层（220、420、620），布置在基板（210、410、610）和OLED结构上，使得所述表面的边缘部分被无机覆盖层（220、420、620）覆盖；阻挡层（230、430、630），通过粘接结构（240、440、640）布置在所述无机覆盖层（220、420、620）上。所述粘接结构（240、440、640）中位于所述边缘部分上的部分包括至少一个凸条，所述凸条位于所述无机覆盖层（220、420、620）和所述阻挡层（230、430、630）之间和/或位于所述基板（210、410、610）和所述阻挡层（230、430、630）之间，以形成所述无机覆盖层（220、420、620）和所述阻挡层（230、430、630）之间的气密空间和/或所述基板（210、410、610）和所述阻挡层（230、430、630）之间的气密空间。

Description

OLED封装结构、OLED封装方法及显示面板
相关申请的交叉引用
本申请要求于2017年4月19日递交的题为“OLED封装结构、OLED封装方法及显示面板”的中国专利申请(申请号201710257928.1)的优先权，在此以全文引用的方式将该中国专利申请并入本文中。
技术领域
本公开涉及半导体封装领域，尤其涉及一种OLED封装结构、OLED封装方法及显示面板。
背景技术
有机发光二极管(OLED)是近年来逐渐受到关注的显示照明器件，它的能够实现柔性显示的特点尤其受到人们的青睐。但是，由于OLED器件在水汽和氧气的作用下，会因腐蚀而被损坏，因此目前OLED器件需要封装结构的保护。为了保证OLED的柔性化，通常采用薄膜封装技术对OLED进行封装。然而通常的薄膜封装技术需要多种不同的封装设备，这些设备的造价一般比较昂贵，并且需要经过复杂冗长的工艺过程。
发明内容
为了至少部分地解决或缓解以上所述的问题，本公开提出了一种OLED封装结构、OLED封装方法及显示面板。
根据本公开的一个方面，提出了一种OLED封装结构。所述OLED封装结构包括：基板，所述基板的表面上布置有待封装的OLED结构；无机覆盖层，布置在基板和OLED结构上，使得所述表面的边缘部分被无机覆盖层覆盖；阻挡层，通过粘接结构布置在所述无机覆盖层上。所述粘接结构中位于所述边缘部分上的部分包括至少一个凸条，所述凸条位于所述无机覆盖层和所述阻挡层之间和/或位于所述基板和所述阻挡层之间，以形成所述无机覆盖层和所述阻挡层之间的气密空间和/或所述基板和所述阻挡层之间的气密空间。
在一个实施例中，所述气密空间中填充有惰性气体或氮气。
在一个实施例中，所述无机覆盖层中位于所述边缘部分上的部分具有至少一个沟道。所述沟道与所述粘接结构中的凸条相对应。所述凸条插入到相应的沟道中，使得凸条的端部与沟道的底部接触。
在一个实施例中，所述沟道的底部为所述基板。
在一个实施例中，所述OLED封装结构还包括边缘封胶。所述边缘封胶设置在所述无机覆盖层的边缘与所述阻挡层的边缘之间且在所述粘接结构的外侧。
在一个实施例中，所述边缘部分是位于所述基板的边缘的矩形环状结构。
根据本公开的另一方面，提出了一种OLED封装方法。所述OLED封装方法包括：提供基板，所述基板的表面上布置有待封装的OLED结构；在基板和OLED结构上形成无机覆盖层，使得所述表面的边缘部分被无机覆盖层覆盖；通过粘接结构在无机覆盖层上布置阻挡层。所述粘接结构中位于所述边缘部分上的部分包括至少一个凸条，所述凸条位于所述无机覆盖层和所述阻挡层之间和/或位于所述基板和所述阻挡层之间，以形成所述无机覆盖层和所述阻挡层之间的气密空间和/或所述基板和所述阻挡层之间的气密空间。
在一个实施例中，在所述气密空间中填充惰性气体或氮气。
在一个实施例中，在基板和OLED结构上形成无机覆盖层的步骤还包括：在所述无机覆盖层中位于所述边缘部分上的部分中形成至少一个沟道。所述沟道与所述粘接结构中的凸条相对应，以使得所述凸条能够插入到相应的沟道中并且凸条的端部能够与沟道的底部接触。
在一个实施例中，所述沟道贯穿所述无机覆盖层，从而所述沟道的底部为所述基板。
在一个实施例中，所述OLED封装方法还包括：在所述无机覆盖层的边缘与所述阻挡层的边缘之间设置边缘封胶，使得所述边缘封胶在所述粘接结构的外侧。
在一个实施例中，所述边缘部分是位于所述基板的边缘的矩形环状结构。
在一个实施例中，通过粘接结构在无机覆盖层上布置阻挡层的步骤包括：在阻挡层的表面上形成粘接结构；以及将粘接结构粘接到无机覆盖层和/或基 板，以使得所述阻挡层布置在无机覆盖层和/或基板上。
根据本公开的又一方面，提出了一种显示面板。所述显示面板包括根据以上任一实施例的OLED封装结构。
附图说明
通过下面结合附图说明本公开的优选实施例，将使本公开的上述及其它目的、特征和优点更加清楚，其中：
图1示出了一种OLED封装结构；
图2示出了根据本公开的一个实施例的OLED封装结构；
图3示出了根据本公开的一个实施例的OLED封装方法的流程图；
图4示出了根据本公开的另一实施例的OLED封装结构；
图5示出了根据本公开的另一实施例的OLED封装方法的流程图；
图6示出了根据本公开的又一实施例的OLED封装结构；
图7示出了根据本公开的又一实施例的OLED封装方法的流程图。
具体实施方式
下面将详细描述本公开的具体实施例，应当注意，这里描述的实施例只用于举例说明，并不用于限制本公开。在以下描述中，为了提供对本公开的透彻理解，阐述了大量特定细节。然而，对于本领域普通技术人员显而易见的是：不必采用这些特定细节来实行本公开。在其他实例中，为了避免混淆本公开，未具体描述公知的电路、材料或方法。
在整个说明书中，对“一个实施例”、“实施例”、“一个示例”或“示例”的提及意味着：结合该实施例或示例描述的特定特征、结构或特性被包含在本公开至少一个实施例中。因此，在整个说明书的各个地方出现的短语“在一个实施例中”、“在实施例中”、“一个示例”或“示例”不一定都指同一实施例或示例。此外，可以以任何适当的组合和/或子组合将特定的特征、结构或特性组合在一个或多个实施例或示例中。此外，本领域普通技术人员应当理解，在此提供的附图都是为了说明的目的，并且附图不一定是按比例绘制的。这里使用的术语“和/或”包括一个或多个相关列出的项目的任何和所有组合。
以下参考附图对本公开进行具体描述。
首先，图1示出了本公开实施例的一种OLED封装结构100。如图1所示，OLED封装结构100自下而上依次包括基板110、交替堆叠的多个无机层120和有机层130。基板110上布置有待封装的OLED结构。布置在基板110上的第一无机层120将OLED结构封装在基板110上，随后的各有机层130和无机层120，逐层堆叠到第一无机层120上，对所封装的OLED结构进一步进行防护。在OLED封装结构100中，无机层120一般通过等离子增强化学气相沉积(PECVD)设备完成，其材料包括但不限于SiNx、SiON或二者的组合。有机层130通常通过蒸镀机、印刷机或喷墨打印设备完成。有机层130的材料可以是可聚合的有机单体，例如亚克力、环氧树脂、硅氧树脂或其组合。可见，OLED封装结构100的实现需要提供多台设备，并需要经过较为冗长的封装工艺，这在一定程度上增加了生产成本。
图2示出了根据本公开的一个实施例的OLED封装结构200的截面图。如图2所示，OLED封装结构200包括基板210、无机覆盖层220、阻挡层230和粘接结构240。
基板210的表面(例如，图2中的上表面)上布置有待封装的OLED结构。基板210的表面可以示例性地分为中心区域和边缘区域。举例来讲，中心区域可以对应于放置有OLED结构的区域。再例如，边缘区域可以指距离基板210的边缘特定距离之内的区域。在一个实施例中，待封装的OLED结构位于所述中心区域中。应该指出的是，中心区域和边缘区域的引入只是为了便于对本申请的技术方案进行描述和说明，而并不对本申请涉及的结构进行任何限制。本领域技术人员应该理解，本申请没有也不必对中心区域和边缘区域之间的界线进行限定，根据不同的需要，本领域技术人员能够对该界线进行相应的调整，以便利技术方案的实施。
在一个实施例中，所述中心区域的形状为矩形，而所述边缘区域的形状为矩形环。在其他实施例中，根据需要，所述中心区域和边缘区域也可以为其他形状。
位于基板上的OLED结构一般地包括OLED发光单元层、驱动阵列层等，在此不对其结构进行限制。
无机覆盖层220布置在基板210和OLED结构上。具体地，无机覆盖层220覆盖OLED结构，并使得所述基板210的表面的边缘部分被无机覆盖层覆盖，即OLED结构被密封在无机覆盖层220和基板210之间。
无机覆盖层220作为基本的水氧阻挡膜层，其材料包括但不限于SiNx、SiON或二者的组合，可以通过PECVD设备实现。
除了无机覆盖层220之外，OLED封装结构200中还包括用于进一步对水氧进行阻挡的阻挡层230。阻挡层230通过粘接结构240布置在无机覆盖层220上。
阻挡层230可以实现为单一膜层。例如，阻挡层230可以是与无机覆盖层相同或相近的无机层(通过PECVD设备实现)，也可以是通过其他设备沉积的无机层，比如通过原子层沉积、溅射沉积、蒸镀沉积等实现。阻挡层230也可以实现为包括多层的层叠结构。所述层叠结构可以是多个无机层的堆叠，也可以与图1中的有机层、无机层交替堆叠结构类似。
在一个实施例中，所述阻挡层230是柔性的，从而更加适于封装OLED结构。
粘接结构240由多个部分组成，包括位于中心区域上方的中心部分和位于所述基板210的表面的边缘部分上的边缘部分，所述粘接结构240的边缘部分包括至少一个凸条。这些凸条位于无机覆盖层220和阻挡层230之间，并且与无机覆盖层220、阻挡层230和粘接结构240的中心部分一起形成了多个气密空间(参见图2的结构中位于无机覆盖层220和阻挡层230之间的空白填充区域)。所述气密空间的形成能够更为有效的将OLED结构与水氧侵袭进行隔绝，这样，即使粘接结构240本身的水氧防护能力较弱，通过OLED封装结构200也能够很好地实现对待封装的OLED结构的保护。
应该理解的是，图2中只是示出了OLED封装结构200的截面图。为了在四周都对水氧进行更好地隔绝，所述凸条实现为矩形环状结构。
应该理解的是，虽然图2中只示出了左右各两个凸条，但在本公开的其他实施例中，OLED封装结构200可以包括更多或更少数量的凸条。
在一个实施例中，所述气密空间中填充有惰性气体或氮气。在另一实施例中，所述气密空间中具有真空或接近真空的状态。
为了实现图2中所示的OLED封装结构，只需要PECVD系统和贴合机即可，这能在维持封装结构的水氧防护能力的同时，降低生产成本，简化生产流程。
图3示出了对应于图2所示的OLED封装结构200的OLED封装方法300的流程图。
首先，在步骤310中，首先提供表面上布置有待封装的OLED结构的基板(例如，基板210)。
然后，在步骤320中，在基板和OLED结构上形成无机覆盖层(例如，无机覆盖层220)，使得所述表面的边缘部分被无机覆盖层覆盖。
最后，在步骤330中，通过粘接结构(例如，粘接结构240)在无机覆盖层上布置阻挡层(例如，阻挡层230)，其中，所述粘接结构中位于所述边缘部分上的部分包括至少一个凸条，所述凸条位于所述无机覆盖层和所述阻挡层之间，以形成所述无机覆盖层和所述阻挡层之间的气密空间。
在一个实施例中，在所述气密空间中填充惰性气体或氮气。
在一个实施例中，在步骤330中，首先在阻挡层的表面上形成粘接结构，然后再将粘接结构粘接到无机覆盖层，以使得所述阻挡层布置在无机覆盖层上。
在另一实施例中，在步骤330中也可以先在无机覆盖层上形成粘接结构，然后再将阻挡层粘接到粘接结构上，以使得所述阻挡层布置在无机覆盖层上。
应该指出的是，由于图2中的OLED封装结构200与图3中的OLED封装方法300相对应，因此，上文中结合图2对OLED封装结构200进行的描述中的解释和说明在此同样适用，从而不再赘述。
图4示出了根据本公开的另一实施例的OLED封装结构400。
如图4所示，OLED封装结构400包括基板410、无机覆盖层420、阻挡层430和粘接结构440。OLED封装结构400与图2中的OLED封装结构200的区别在于无机覆盖层以及粘接结构的结构。
如图4所示，在OLED封装结构400中，无机覆盖层420中位于基板410的表面的边缘部分上的部分具有至少一个沟道。所述沟道与所述粘接结构中的凸条相对应。所述凸条插入到相应的沟道中，使得凸条的端部与沟道的底部接触。
在图4中，所述沟道贯穿无机覆盖层420，从而沟道的底部为所述基板410的表面。应该理解的是，在其他实施例中，所述沟道可以不贯穿无机覆盖层420。
在一个实施例中，所述沟道的宽度等于(或略大于)所述凸条的宽度，以使得所述凸条能够完全(或接近完全)填充所述沟道。
应该理解的是，虽然图4中只示出了左右各三个凸条，但在本公开的其他实施例中，OLED封装结构400可以包括更多或更少数量的凸条。
此外，在图4所示实施例中，所有凸条440均形成在基板410和阻挡层430之间，然而本公开不限于此。事实上，在另一些实施例中，部分凸条440可以形成在没有沟道的无机覆盖层420和阻挡层430之间，类似于图2所示实施例。例如，在一些实施例中，贴近内侧的凸条440可以形成在没有沟道的无机覆盖层420和阻挡层430之间，而靠近外侧的凸条440可以形成在无机覆盖层420的沟道底部和阻挡层430之间。在另一些实施例中，在沟道贯通了无机覆盖层420的情况下，即沟道底部为基板410的表面的情况下，靠近外侧的凸条440可以形成在基板410和阻挡层430之间。
应该指出的是，为了简明起见，本申请没有对图4中的OLED封装结构400与图2中的OLED封装结构200相同的部分进行重复描述，本领域技术人员应该理解，上文结合图2进行的相关解释和说明在此同样适用。
图5示出了对应于图4所示的OLED封装结构400的OLED封装方法500的流程图。
首先，在步骤510中，首先提供表面上布置有待封装的OLED结构的基板(例如，基板410)。
然后，在步骤520中，在基板和OLED结构上形成无机覆盖层(例如，无机覆盖层420)，使得所述表面的边缘部分被无机覆盖层覆盖。
接下来，在步骤530中，在所述无机覆盖层中位于所述边缘部分上的部分中形成至少一个沟道，所述沟道与所述粘接结构中的凸条相对应，以使得所述凸条能够插入到相应的沟道中并且凸条的端部能够与沟道的底部接触。
应该理解的是，虽然方法500中将步骤520和步骤530示为分离的两个步骤，但在其他实施例中，它们可以通过单个步骤来实现。
最后，在步骤540中，通过粘接结构(例如，粘接结构440)在无机覆盖层上布置阻挡层(例如，阻挡层430)，其中，所述粘接结构中位于所述边缘部分上的部分包括至少一个凸条，所述凸条位于所述无机覆盖层和所述阻挡层之间，以形成所述无机覆盖层和所述阻挡层之间的气密空间。
在一个实施例中，在步骤540中，首先在阻挡层的表面上形成粘接结构，然后再将粘接结构粘接到无机覆盖层，以使得所述阻挡层布置在无机覆盖层上。
在另一实施例中，在步骤540中也可以先在无机覆盖层上形成粘接结构，然后再将阻挡层粘接到粘接结构上，以使得所述阻挡层布置在无机覆盖层上。
图6示出了根据本公开的又一实施例的OLED封装结构600。
如图6所示，OLED封装结构600包括基板610、无机覆盖层620、阻挡层630、粘接结构640和边缘封胶650。OLED封装结构600与图4中的OLED封装结构400的区别在于边缘封胶650。
如图6所示，在OLED封装结构600中，粘接结构640并不像OLED封装结构400中那样位于封装结构600的外边缘处，取而代之的是无机覆盖层620的一部分以及堆叠在其上的边缘封胶650，即边缘封胶650设置在无机覆盖层620的边缘外侧与阻挡层630的边缘外侧之间。
在一个实施例中，所述边缘封胶650是通过点胶机或浸入式涂胶设备实现的。
此外，在图6所示实施例中，所有凸条640均形成在基板410和阻挡层630之间，然而本公开不限于此。事实上，在另一些实施例中，部分凸条640可以形成在没有沟道的无机覆盖层620和阻挡层630之间，类似于图2所示实施例。例如，在一些实施例中，贴近内侧的凸条640可以形成在没有沟道的无机覆盖层620和阻挡层630之间，而靠近外侧的凸条640可以形成在无机覆盖层620的沟道底部和阻挡层630之间。在另一些实施例中，在沟道贯通了无机覆盖层620的情况下，即沟道底部为基板610的表面的情况下，靠近外侧的凸条640可以形成在基板610和阻挡层630之间。
应该指出的是，为了简明起见，本申请没有对图6中的OLED封装结构600与图4中的OLED封装结构400相同的部分进行重复描述，本领域技术人员应该理解，上文结合图2和图4进行的相关解释和说明在此同样适用。
图7示出了对应于图6所示的OLED封装结构600的OLED封装方法700的流程图。
首先，在步骤710中，首先提供表面上布置有待封装的OLED结构的基板(例如，基板610)。
然后，在步骤720中，在基板和OLED结构上形成无机覆盖层(例如，无机覆盖层620)，使得所述表面的边缘部分被无机覆盖层覆盖。
接下来，在步骤730中，在所述无机覆盖层中位于所述边缘部分上的部分中形成至少一个沟道，所述沟道与所述粘接结构中的凸条相对应，以使得所述凸条能够插入到相应的沟道中并且凸条的端部能够与沟道的底部接触。
应该理解的是，虽然方法700中将步骤720和步骤730示为分离的两个步骤，但在其他实施例中，它们可以通过单个步骤来实现。
接下来，在步骤740中，通过粘接结构(例如，粘接结构640)在无机覆盖层上布置阻挡层(例如，阻挡层630)，其中，所述粘接结构中位于所述边缘部分上的部分包括至少一个凸条，所述凸条位于所述无机覆盖层和所述阻挡层之间，以形成所述无机覆盖层和所述阻挡层之间的气密空间。
最后，在步骤750中，在无机覆盖层的边缘外侧与阻挡层的边缘外侧之间设置边缘封胶(例如，边缘封胶650)。
在一个实施例中，在步骤740中，首先在阻挡层的表面上形成粘接结构，然后再将粘接结构粘接到无机覆盖层，以使得所述阻挡层布置在无机覆盖层上。
在另一实施例中，在步骤740中也可以先在无机覆盖层上形成粘接结构，然后再将阻挡层粘接到粘接结构上，以使得所述阻挡层布置在无机覆盖层上。
虽然已参照几个典型实施例描述了本公开，但应当理解，所用的术语是说明和示例性、而非限制性的术语。由于本公开能够以多种形式具体实施而不脱离公开的精神或实质，所以应当理解，上述实施例不限于任何前述的细节，而应在随附权利要求所限定的精神和范围内广泛地解释，因此落入权利要求或其等效范围内的全部变化和改型都应为随附权利要求所涵盖。

Claims (10)

  1. 一种OLED封装结构，包括：
    基板，所述基板的表面上布置有待封装的OLED结构；
    无机覆盖层，布置在基板和OLED结构上，使得所述表面的边缘部分被无机覆盖层覆盖；
    阻挡层，通过粘接结构布置在所述无机覆盖层上，
    其中，所述粘接结构中位于所述边缘部分上的部分包括至少一个凸条，所述凸条位于所述无机覆盖层和所述阻挡层之间和/或位于所述基板和所述阻挡层之间，以形成所述无机覆盖层和所述阻挡层之间的气密空间和/或所述基板和所述阻挡层之间的气密空间。
  2. 根据权利要求1所述的OLED封装结构，其中，所述气密空间中填充有惰性气体或氮气。
  3. 根据权利要求1或2所述的OLED封装结构，其中，所述无机覆盖层中位于所述边缘部分上的部分具有至少一个沟道，所述沟道与所述粘接结构中的凸条相对应，以及所述凸条插入到相应的沟道中，使得凸条的端部与沟道的底部接触，所述沟道的底部为所述基板。
  4. 根据权利要求1或2所述的OLED封装结构，还包括：边缘封胶，设置在所述无机覆盖层的边缘与所述阻挡层的边缘之间且在所述粘接结构的外侧。
  5. 根据权利要求1所述的OLED封装结构，其中，所述边缘部分是位于所述基板的边缘的矩形环状结构。
  6. 一种OLED封装方法，包括：
    提供基板，所述基板的表面上布置有待封装的OLED结构；
    在基板和OLED结构上形成无机覆盖层，使得所述表面的边缘部分被无机覆盖层覆盖；
    通过粘接结构在无机覆盖层上布置阻挡层，
    其中，所述粘接结构中位于所述边缘部分上的部分包括至少一个凸条，所述凸条位于所述无机覆盖层和所述阻挡层之间和/或位于所述基板和所述阻挡 层之间，以形成所述无机覆盖层和所述阻挡层之间的气密空间和/或所述基板和所述阻挡层之间的气密空间。
  7. 根据权利要求6所述的OLED封装方法，还包括：
    在所述气密空间中填充惰性气体或氮气。
  8. 根据权利要求6或7所述的OLED封装方法，在基板和OLED结构上形成无机覆盖层的步骤还包括：
    在所述无机覆盖层中位于所述边缘部分上的部分中形成至少一个沟道，
    其中，所述沟道与所述粘接结构中的凸条相对应，以使得所述凸条能够插入到相应的沟道中并且凸条的端部能够与沟道的底部接触，所述沟道贯穿所述无机覆盖层，从而所述沟道的底部为所述基板。
  9. 根据权利要求6或7所述的OLED封装方法，还包括：
    在所述无机覆盖层的边缘与所述阻挡层的边缘之间设置边缘封胶，使得所述边缘封胶在所述粘接结构的外侧，
    其中，所述边缘部分是位于所述基板的边缘的矩形环状结构，
    其中，通过粘接结构在无机覆盖层上布置阻挡层的步骤包括：
    在阻挡层的表面上形成粘接结构，
    将粘接结构粘接到无机覆盖层和/或基板，以使得所述阻挡层布置在无机覆盖层和/或基板上。
  10. 一种显示面板，包括根据权利要求1-5中任一项所述的OLED封装结构。
PCT/CN2017/102989 2017-04-19 2017-09-22 Oled封装结构、oled封装方法及显示面板 Ceased WO2018192169A1 (zh)

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