WO2018190448A1 - Capteur tactile à film et panneau d'écran tactile le comprenant - Google Patents

Capteur tactile à film et panneau d'écran tactile le comprenant Download PDF

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Publication number
WO2018190448A1
WO2018190448A1 PCT/KR2017/004017 KR2017004017W WO2018190448A1 WO 2018190448 A1 WO2018190448 A1 WO 2018190448A1 KR 2017004017 W KR2017004017 W KR 2017004017W WO 2018190448 A1 WO2018190448 A1 WO 2018190448A1
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Prior art keywords
layer
touch sensor
refractive index
electrode pattern
film
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PCT/KR2017/004017
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English (en)
Korean (ko)
Inventor
조수호
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동우화인켐 주식회사
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Priority to PCT/KR2017/004017 priority Critical patent/WO2018190448A1/fr
Publication of WO2018190448A1 publication Critical patent/WO2018190448A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02—Physical, chemical or physicochemical properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means

Definitions

  • the present invention relates to a film touch sensor and a touch screen panel including the same. More particularly, the present invention relates to a film touch sensor including a plurality of conductive layers and insulating layers, and a touch screen panel including the same.
  • a touch screen panel For example, in a capacitive touch panel, a transparent conductive layer is formed on a substrate, and the transparent conductive layer is etched in a predetermined pattern shape for touch recognition, whereby a channel region through which electricity flows and a non-channel through which electricity does not flow. Regions can be formed.
  • the capacitive touch panel can recognize input coordinates by detecting a change in capacitance in each channel on which a pattern is formed when a finger or the like touches it, and can be manufactured to have a thinner thickness than a resistive film. Touch implementation is possible.
  • ITO electrode patterns are formed in the channel region, and the display quality of the display device may be degraded when the electrode pattern is visually recognized due to a change in transmittance and reflectance caused by the ITO electrode pattern.
  • the electrode pattern visibility can be reduced by minimizing the thickness and width of the electrode pattern formed on the substrate, the electrode pattern visibility problem still remains an issue to be solved.
  • Korean Patent Laid-Open Publication No. 10-2011-0089491 discloses a laminated structure of a touch panel including a Nb 2 O 5 thin film layer, a SiO 2 thin film layer, and an ITO thin film layer to reduce electrode pattern visibility.
  • a Nb 2 O 5 thin film layer a laminated structure of a touch panel including a Nb 2 O 5 thin film layer, a SiO 2 thin film layer, and an ITO thin film layer to reduce electrode pattern visibility.
  • heterogeneous material deposition and expensive Nb 2 O 5 Ease of processing and economics due to the use of the target may be deteriorated.
  • One object of the present invention is to provide a film touch sensor with improved optical and visual properties.
  • One object of the present invention is to provide a touch screen panel and an image display device including the film touch sensor.
  • Base film A first electrode pattern layer disposed on the base film; And a refractive index matching layer disposed on the first electrode pattern layer toward the visual recognition side.
  • the base film comprises a separation layer and a protective layer
  • the first electrode pattern layer is disposed on the protective layer, the film touch sensor.
  • the film touch sensor comprises a metal nanowire layer and a transparent metal oxide layer sequentially disposed from the base film, the film touch sensor.
  • the refractive index matching layer is the first sensing electrode patterns and the second sensing electrode patterns At least partially covering the film touch sensor.
  • the second electrode pattern layer is adjacent to the first sensing electrode pattern between the The film touch sensor connecting the second sensing electrode patterns to each other.
  • the film touch sensor includes a sensing area and a wiring area, and the first sensing electrode patterns and the second sensing electrode patterns are disposed on the sensing area.
  • the first electrode pattern layer further comprises a pad disposed on the wiring area, the film touch sensor.
  • the pad further comprises a metal pattern disposed under the metal nanowire layer.
  • the refractive index of the metal nanowire layer is 1.7 to 2.5 film touch sensor.
  • Resin matrix And at least one inorganic material distributed in the resin matrix and selected from the group consisting of zirconium oxide, zinc oxide, silicon oxide, cerium oxide, indium oxide and titanium oxide.
  • the touch screen panel including the film touch sensor of any one of the above 1 to 14.
  • Image display device comprising the film touch sensor of any one of the above 1 to 14.
  • the film touch sensor according to the present invention includes a refractive index matching layer on the electrode pattern layer in the viewing direction, for example, lower haze and higher transmittance than the case where the refractive index matching layer is included between the transparent base layer and the metal nanowire layer. Can be represented. Therefore, the film touch sensor may be applied to a touch screen panel, an image display device, or the like to significantly improve display quality.
  • FIG. 1 to 3 are cross-sectional views schematically illustrating a laminated structure of a film touch sensor according to embodiments of the present invention.
  • FIG. 4 is a schematic plan view illustrating an electrode pattern structure of a film touch sensor according to embodiments of the present disclosure.
  • FIG. 5 is a schematic cross-sectional view illustrating a film touch sensor according to embodiments of the present invention.
  • 6 to 11 are cross-sectional views illustrating a method of manufacturing a film touch sensor according to embodiments of the present invention.
  • FIG. 13 is a schematic diagram illustrating light reflection in a film touch sensor according to embodiments of the present disclosure.
  • Embodiments of the present invention include a base film, a first electrode pattern layer, and a refractive index matching layer sequentially stacked in the viewing direction, thereby providing a film touch sensor having low haze and high transmittance and having significantly improved visibility characteristics. do.
  • the present invention also provides a touch screen panel and an image display device including the film touch sensor.
  • FIG. 1 to 3 are cross-sectional views schematically illustrating a laminated structure of a film touch sensor according to embodiments of the present invention.
  • the film touch sensor may include a separation layer 103, a protective layer 105, a first electrode pattern layer 130, and a refractive index matching layer 140 that are sequentially stacked.
  • the refractive index matching layer 140 may be disposed in the viewer side direction.
  • the first electrode pattern layer 130 may include sensing electrode patterns of the film touch sensor.
  • additional structures such as an insulating layer, a second electrode pattern, a passivation layer, and the like may be stacked on the refractive index matching layer 140.
  • Separation layer 103 and protective layer 105 may be provided together as a base film.
  • the base film may function as a support layer for forming the first electrode pattern layer 130 and the index matching layer (IML) 140.
  • the separation layer 103 may be included as a functional layer for easily performing a subsequent peeling process from the carrier substrate 90 (see FIG. 6).
  • the separation layer 103 may be made of polyimide, polyvinyl alcohol, polyamic acid, polyamide, polyethylene, polystyrene, polynovo Polynorbornene, phenylmaleimide copolymer, polyazobenzene, polyphenylenephthalamide, polyester, polymethyl methacrylate, polyarylate It may be formed to include polymers such as polyarylate, cinnamate, coumarin, phthalimidine, chalcone and aromatic acetylene. These may be used alone or in combination of two or more thereof.
  • the separation layer 103 may be made of a material having a peel force of 1 N / 25 mm or less on the carrier substrate so that the separation layer 103 is easily peeled off from the carrier substrate 90 and not peeled off from the protective layer 105.
  • the thickness of the separation layer 103 may be about 10 to 1000 nm, preferably about 50 to 500 nm. If the thickness of the isolation layer 103 is less than about 10 nm, film uniformity may be deteriorated and electrode pattern formation may be uneven. In addition, the peeling force may locally increase to cause tearing, or may cause curl of the film touch sensor after separation from the carrier substrate 90. When the thickness of the separation layer 103 exceeds 1000 nm, the peel force is no longer lowered, and the flexibility of the film touch sensor may be lowered.
  • the protective layer 105 is formed on the separation layer 103, and covers the first electrode pattern layer 130 shown in FIGS. 1 to 3 together with the separation layer 103 to form the first electrode pattern layer 130. And breaking of the first electrode pattern layer 130 during the peeling process from the carrier substrate 90.
  • the protective layer 105 may include an inorganic insulating material such as an inorganic oxide, an inorganic nitride, or a polymer-based organic insulating material.
  • an inorganic insulating material such as an inorganic oxide, an inorganic nitride, or a polymer-based organic insulating material.
  • the inorganic oxide include silicon oxide, alumina, titanium oxide and the like
  • examples of the inorganic nitride include silicon nitride, titanium nitride and the like.
  • the protective layer 105 may be formed of silicon oxide.
  • the heat resistance of the film touch sensor may be improved by the protective layer 105, and thermal deformation and cracks of the first electrode pattern layer 130 may be prevented. Therefore, a high temperature deposition and annealing process may be performed to form the first electrode pattern layer 130 having a lower resistance.
  • the chemical resistance of the film touch sensor may be improved by the protective layer 105 to prevent swelling and peeling of the separation layer 103.
  • the first electrode pattern layer 130 may include, but is not limited to, a conductive material and may include a material having transparency.
  • a conductive material may include a material having transparency.
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • IZTO indium zinc tin oxide
  • AZO aluminum zinc oxide
  • IZTO-Ag-IZTO Transparent metal oxides such as aluminum zinc oxide-silver-aluminum zinc oxide (AZO-Ag-AZO); Metals or alloys such as gold (Au), silver (Ag), copper (Cu), palladium (Pd), molybdenum (Mo), silver-palladium-copper (APC), and the like; Metal nanowires; Carbon-based materials such as carbon nanotubes (CNT) and graphene; Or a conductive polymer such as poly (3,4-ethylenedioxythiophene) (PEDOT), polyaniline (PANI), or the like. These may be used alone or in combination of two or more
  • the refractive index matching layer 140 may be included to improve the optical uniformity of the film touch sensor, the touch screen panel or the image display device including the same.
  • the difference in optical characteristics due to the structural difference of the patterns included in the first electrode pattern layer 130 formed under the refractive index matching layer 140 may be reduced, and the pattern in the sensing region may be reduced.
  • the visibility of the sensing electrode pattern may be reduced by reducing the difference in reflectance between the negative and non-pattern portions.
  • the refractive index matching layer 140 may have a structure in which inorganic materials are mixed or deposited in the resin matrix.
  • the refractive index matching layer 140 may be formed in a predetermined pattern shape according to the shape of the first electrode pattern layer 130 or the sensing electrode pattern as described below with reference to FIG. 5.
  • the resin matrix is not particularly limited as long as it is a transparent resin matrix, and may include, for example, a photoresist.
  • the inorganic material may include, for example, zirconium oxide, zinc oxide, silicon oxide, cerium oxide, indium oxide, or titanium oxide. These may be used alone or in combination of two or more.
  • the refractive index of the refractive index matching layer 140 may range from about 1.45 to 2.0. When the refractive index matching layer 140 has a refractive index of less than about 1.45, the suppression of the visual recognition of the first electrode pattern layer 130 may not be substantially implemented. If the refractive index of the refractive index matching layer 140 exceeds about 2.0, the transmittance and haze characteristics may be excessively deteriorated.
  • the thickness of the refractive index matching layer 140 may be about 50 to 150 nm. If the thickness of the refractive index matching layer 140 is less than about 50 nm, sufficient insulation may not be secured. If the thickness of the refractive index matching layer 140 exceeds about 150 nm, the transmittance and haze characteristics may be excessively deteriorated.
  • the first electrode pattern layer 130 may include a metal nanowire layer 120a and a transparent metal oxide layer 120b sequentially stacked on the protective layer 105.
  • the metal nanowire layer 120a may be formed of, for example, at least one nanowire of gold, silver, aluminum, copper, iron, nickel, titanium, telenium, palladium, molybdenum, chromium, or an alloy thereof. In terms of electrical conductivity, low resistance properties and economy, silver nanowires may be used.
  • the refractive index of the metal nanowire layer 120a may be about 1.7 to 2.5. When the refractive index of the metal nanowire layer 120a is less than about 1.7, the visibility improvement effect may not be sufficiently realized. When the refractive index of the metal nanowire layer 120a is greater than about 2.5, the transmittance may be lowered and the haze may be worsened.
  • the thickness of the metal nanowire layer 120a is not particularly limited and may be, for example, about 30 to 100 nm. Since the diameter of the metal nanowire is generally not completely uniform, it may be difficult to form a uniform thin film when the thickness of the metal nanowire layer 120a is less than about 30 nm, and when the thickness exceeds about 100 nm, the metal nanowire may be exposed to the layer surface. Difficult to raise resistance.
  • the diameter of the metal nanowires is not particularly limited, and may be, for example, about 10 to 100 nm. If the diameter is less than about 10 nm, process control for film formation may be difficult, and if it exceeds about 100 nm, optical properties such as transmittance may be lowered.
  • the transparent metal oxide layer 120b may include a metal oxide having conductivity and transparency, and may include, for example, ITO, IZO, IZTO, AZO, IZTO-Ag-IZTO, or AZO-Ag-AZO. These may be used alone or in combination of two or more.
  • the transparent metal oxide layer 120b may include ITO to improve permeability, and may include, for example, crystalline ITO or amorphous ITO.
  • the metal nanowire layer 120a may be etched in the same pattern together with the transparent metal oxide layer 120b thereon.
  • the sensing electrode pattern high transparency and low resistance of the sensing electrode pattern may be realized.
  • a metal pattern 110 may be inserted between the first electrode pattern layer 130 and the protective layer 105.
  • the metal pattern 110 may be disposed between the metal nanowire layer 120a and the protective layer 105.
  • the stacked structure illustrated in FIG. 3 may be disposed in a wiring area or a pad area of the film touch sensor.
  • ITO indium tin oxide
  • the film touch sensor according to the embodiments of the present invention may solve the problem of visual recognition of the first electrode pattern layer 130 by including the refractive index matching layer 140 on the first electrode pattern layer 130.
  • the film touch sensor according to the embodiments of the present invention may solve the problem of visual recognition of the first electrode pattern layer 130 by including the refractive index matching layer 140 on the first electrode pattern layer 130.
  • the stacked structure of the first electrode pattern layer 130 and the refractive index matching layer 140 together in the display area and the wiring area, process economical efficiency and yield can be improved together.
  • the transparent metal oxide layer 120b eg, an ITO electrode pattern
  • the transparent metal oxide layer 120b eg, an ITO electrode pattern
  • the refractive index matching layer 140 may be stacked on the first electrode pattern layer 130 and disposed closer to the viewer side. Accordingly, the visibility of the first electrode pattern layer 130 is significantly reduced, and the film touch sensor or the touch screen pattern / image display device to which the film touch sensor is applied has improved display characteristics and optical characteristics through low haze and high transmittance. Can have
  • FIG. 4 is a schematic plan view illustrating an electrode pattern structure of a film touch sensor according to embodiments of the present disclosure.
  • 5 is a schematic cross-sectional view illustrating a film touch sensor according to embodiments of the present invention.
  • FIG. 5 includes a cross section taken along the III-III ′ line of FIG. 4 in the thickness direction of the film touch sensor.
  • the film touch sensor includes the sensing electrode patterns 131 and 133 and the pad 135 disposed on the base film 100 including the isolation layer 103 and the protective layer 105. And a refractive index matching layer 140 at least partially covering the sensing electrode patterns 131 and 133 and the pad 135.
  • the film touch sensor may include a first region I and a second region II. Accordingly, the base film 100 may also be divided into the first region I and the second region II.
  • the first region I may correspond to the sensing region or the display region of the film touch sensor
  • the second region II may correspond to the wiring region or the pad region of the film touch sensor.
  • the sensing electrode patterns 131 and 133 may be disposed on the passivation layer 105 in the first region I.
  • the sensing electrode patterns 131 and 133 may be formed from the first electrode pattern layer 130 described with reference to FIG. 1 or 2.
  • the first electrode pattern layer 130 may include a metal nanowire layer 120a and a transparent metal oxide layer 120b.
  • the sensing electrode patterns 131 and 133 may include metal nanowire patterns 121 and 122 and transparent metal oxide patterns 123 and 124.
  • the sensing electrode pattern may include a first sensing electrode pattern 131 and a second sensing electrode pattern 133.
  • the first sensing electrode pattern 131 may include a first metal nanowire pattern 121 and a first transparent metal oxide pattern 123 sequentially stacked on the protective layer 105.
  • the second sensing electrode pattern 133 may include a second metal nanowire pattern 122 and a second transparent metal oxide pattern 124 sequentially stacked on the protective layer 105.
  • the first and second sensing electrode patterns 131 and 133 may be arranged in a direction crossing each other to provide information about the touch point coordinates input from the display screen disposed on the viewer side.
  • the first sensing electrode pattern 131 may extend in a row direction and include a plurality of unit patterns connected to each other by the connection part 131a.
  • the unit pattern may have, for example, a polygonal shape.
  • the second sensing electrode pattern 133 may include island patterns that are physically spaced apart from each other.
  • the second sensing electrode patterns 133 may be spaced apart from the first sensing electrode patterns 131 to be electrically and physically separated.
  • the second sensing electrode patterns 133 may be spaced apart from each other with the connection part 131a of the first sensing electrode pattern 131 interposed in the column direction.
  • each sensing electrode pattern has a laminated structure of a metal nanowire pattern and a transparent metal oxide pattern, resistance can be reduced while improving transmittance of the film touch sensor.
  • a film touch sensor with improved transparency and signal sensitivity can be realized.
  • the transmittance of the sensing electrode patterns 131 and 133 or the first electrode pattern layer 130 illustrated in FIGS. 1 to 3 may be about 80% or more, and preferably about 90% or more.
  • the sheet resistance of the sensing electrode patterns 131 and 133 or the first electrode pattern layer 130 may be about 150 ⁇ or less, and preferably about 130 ⁇ or less.
  • the sensing electrode patterns 131 and 133 include the metal nanowire patterns 121 and 122
  • flexibility of the film touch sensor may be further improved. Therefore, the film touch sensor can be effectively applied to the flexible display device.
  • the thickness of the sensing electrode patterns 131 and 133 is not particularly limited, the thickness of the sensing electrode patterns 131 and 133 may be formed as a thin film in consideration of the flexibility of the film touch sensor.
  • the pad 135 may be disposed on a portion of the base film 100 of the second region II.
  • the pad 135 may include a metal pattern 110, a third metal nanowire pattern 125, and a third transparent metal oxide pattern 127 sequentially stacked from an upper surface of the base film 100. It may include a laminated structure of.
  • the third transparent metal oxide pattern 127 and the third metal nanowire pattern 125 may be formed together with the sensing electrode patterns 131 and 133, for example, from the first electrode pattern layer 130 shown in FIG. 2. Can be.
  • the metal pattern 110 includes silver (Ag), palladium (Pd), gold (Au), aluminum (Al), copper (Cu), platinum (Pt), cobalt (Co), tungsten (W), zinc (Zn) , Iron (Fe), nickel (Ni), titanium (Ti), tantalum (Ta), chromium (Cr), or an alloy thereof.
  • the metal pattern 110 is included in the pad 135, the electrical signal transmission and reception speed of the film touch sensor may be improved.
  • the pad 135 may be electrically connected to, for example, an external flexible printed circuit board (FPCB).
  • FPCB flexible printed circuit board
  • the refractive index matching layer 140 may be formed on the base film 100 to at least partially cover the sensing electrode patterns 131 and 133. In addition, the refractive index matching layer 140 may at least partially cover the pad 135.
  • the refractive index matching layer 140 substantially completely covers the top surfaces of the first sensing electrode patterns 131 and partially contacts the top surfaces of the second sensing electrode patterns 133. It may include.
  • the insulating layer 145 may be further formed on the refractive index matching layer 140.
  • the insulating layer 145 may be provided as an insulating layer for forming the second electrode pattern layer 150.
  • the insulating layer 145 may have a shape substantially the same as that of the refractive index matching layer 140, and partially fill the contact hole included in the refractive index matching layer 140.
  • the top surfaces of the second sensing electrode patterns 133 may be partially exposed.
  • the insulating layer 145 may include, for example, an inorganic insulating material such as silicon oxide, or a transparent organic material such as acrylic resin.
  • the insulating layer 145 may be formed from an organic resin composition including a thermosetting or photocurable material such as an epoxy compound, an acrylic compound, a melanin compound, and the like.
  • the second electrode pattern layer 150 may be formed on the insulating layer 145 or the refractive index matching layer 140. As illustrated in FIG. 4, the second electrode pattern layer 150 may be patterned as a bridge electrode that electrically connects the second sensing electrode patterns 133 neighboring in the column direction. In this case, the second electrode pattern layer 150 may fill the contact holes included in the insulating layer 145 or the refractive index matching layer 140.
  • a sensing line extending in the column direction may be defined while maintaining insulation from the first sensing electrode patterns 131 extending in the row direction by the second electrode pattern layer 150.
  • the second electrode pattern layer 150 may include a transparent metal oxide that is substantially the same as the transparent metal oxide patterns 124, 123, and 127 to improve transparency or transmittance.
  • the second electrode pattern layer 150 may include ITO.
  • the thickness of the second electrode pattern layer 150 is not particularly limited, but may be, for example, about 1,400 to 1,800 mm 3, and preferably about 1,500 to 1,700 mm 3.
  • the passivation layer 160 may be formed on the insulating layer 145 and the second electrode pattern layer 150.
  • the passivation layer 160 may be disposed, for example, toward the viewer side of the film touch sensor, and may protect the film touch sensor from external moisture.
  • the passivation layer 160 may include, for example, an inorganic oxide such as silicon oxide, or an organic insulating material.
  • the passivation layer 160 may have a thickness of, for example, 2,000 nm or less, and may have a refractive index of about 1.4 to 1.6, for example, to reduce reflectance from the electrode patterns.
  • FIGS. 6 to 11 are cross-sectional views illustrating a method of manufacturing a film touch sensor according to embodiments of the present invention. Detailed description of materials and components substantially the same as or similar to those described with reference to FIGS. 1 to 5 will be omitted.
  • a separation layer 103 and a protection layer 105 may be formed on the carrier substrate 90.
  • the carrier substrate 90 for example, a glass substrate or a plastic substrate can be used.
  • the base film may be defined by the separation layer 103 and the protective layer 105, and the base film may be divided into a first region I and a second region II.
  • the metal pattern 110 may be formed on the protective layer 105 of the second region II.
  • the metal pattern 110 may be formed by partially removing the metal layer through a photolithography process using a first photo mask.
  • sensing electrode patterns 131 and 133 are formed on the passivation layer 105 of the first region I, and the pad 135 is formed on the passivation layer 105 of the second region II. ) Can be formed.
  • the metal nanowire layer and the transparent metal oxide layer may be sequentially formed to cover the first region I and the second region II in common. Thereafter, the transparent metal oxide layer and the metal nanowire layer may be patterned through a photolithography process using a second photo mask to form sensing electrode patterns 131 and 133 and a pad 135.
  • the first metal nanowire pattern 121 and the second metal nanowire pattern 122 are formed in the first region I from the metal nanowire layer, and the second metal nanowire pattern 122 is formed on the metal pattern 110 of the second region II. 3 metal nanowire pattern 125 may be formed.
  • the first transparent metal oxide pattern 123 and the second transparent metal oxide pattern 124 are formed in the first region I from the transparent metal oxide layer, and the third transparent metal oxide pattern (2) is formed in the second region II. 127 may be formed.
  • the first sensing electrode pattern 131 is defined by the first metal nanowire pattern 121 and the first transparent metal oxide pattern 123, and the second metal nanowire pattern 122 and the second transparent metal oxide pattern (
  • the second sensing electrode pattern 133 may be defined by 124.
  • the pad 135 may be defined by the metal pattern 110, the third metal nanowire pattern 125, and the third transparent metal oxide pattern 127.
  • the method of forming the metal nanowire layer is not particularly limited, and for example, chemical vapor deposition (CVD), sputtering, physical vapor deposition (PVD), plasma deposition, thermal deposition, thermal oxidation, anodization, cluster ion beam Deposition and the like.
  • CVD chemical vapor deposition
  • PVD physical vapor deposition
  • plasma deposition thermal deposition
  • thermal oxidation thermal oxidation
  • anodization cluster ion beam Deposition and the like.
  • slit coating method knife coating method, spin coating method, casting method, micro gravure coating method, gravure coating method, bar coating method, roll coating method, wire bar coating method, dip coating method, spray coating method, screen printing method It may be formed through a printing or coating process such as gravure printing, flexographic printing, offset printing, inkjet coating, dispenser printing, nozzle coating, capillary coating, or the like.
  • the metal nanowire layer may be formed by applying a nanowire composition including metal nanowires and a dispersion medium, and curing the nanowire composition.
  • the nanowire composition may further include a binder resin, and may further include an additive such as a polymerization initiator.
  • the transparent metal oxide layer may be formed through a deposition process such as, for example, a chemical vapor deposition (CVD) process, a sputtering process, a physical vapor deposition (PVD) process, or the like.
  • CVD chemical vapor deposition
  • PVD physical vapor deposition
  • the refractive index matching layer 140 may be formed to at least partially cover the sensing electrode patterns 131 and 133 and the pad 135.
  • the refractive index matching layer may be formed using a photoresist composition added with an inorganic material including zirconium oxide, zinc oxide, silicon oxide, cerium oxide, indium oxide, titanium oxide, and the like.
  • the inorganic material may be mixed at about 0.1 to 8 parts by weight based on 100 parts by weight of the total photoresist composition.
  • the content of the inorganic material is less than about 0.1 part by weight, the effect of improving transmittance through the refractive index matching and reducing the pattern visibility may not be sufficiently realized. If the content of the inorganic material exceeds about 8 parts by weight, the transmittance and haze characteristics of the film touch sensor may be deteriorated.
  • the photoresist composition is not particularly limited as long as it is used in the art, and may preferably include a negative photoresist.
  • the coating layer may be partially removed through a selective exposure process and a developing process. Accordingly, for example, contact holes may be formed to partially expose the top surface of the second sensing electrode pattern 133.
  • an insulating layer 145 may be further formed on the refractive index matching layer 140.
  • the insulating layer 145 may be formed through a deposition process or a coating process, and may be etched along the pattern profile of the refractive index matching layer 140. Accordingly, the insulating layer 145 may cover the surface of the refractive index matching layer 140 and partially fill the contact hole.
  • a second electrode pattern layer 150 may be formed on the insulating layer 145.
  • the second electrode pattern layer 150 may be formed to include a transparent metal oxide such as ITO through, for example, a sputtering process.
  • the second electrode pattern layer 150 may be patterned to fill the contact holes and electrically connect the pair of adjacent second sensing electrode patterns 133 to each other.
  • the passivation layer 160 covering the second electrode pattern layer 150 may be formed on the insulating layer 140.
  • a first adhesive layer may be formed on the passivation layer 160, and a protective film (not shown) may be attached through the first adhesive layer.
  • the carrier substrate 90 may be peeled or separated from the separation layer 103, and a substrate layer (not shown) may be attached to the surface of the separation layer 103 from which the carrier substrate 90 is separated.
  • a second adhesive layer may be formed on one surface of the substrate layer, and the substrate layer and the separation layer 103 may be bonded through the second adhesive layer.
  • the base layer may include, for example, a flexible resin film such as polyimide, or various optical functional layers such as a polarizing film.
  • the protective film may be removed.
  • the pad 135 may be exposed by partially removing the passivation layer 160, the insulating layer 145 and / or the refractive index matching layer 140 formed on the second region II. .
  • the FPCB may be connected through the pad 135.
  • the metal nanowire layer and the transparent metal oxide layer may be collectively patterned to form the sensing electrode pattern and the pad together. Therefore, it is possible to form electrode patterns having improved transparency and sensitivity in an easy process.
  • the refractive index matching layer is formed adjacent to the viewer side and covers the sensing electrode pattern and the pad, the amount of reflected light according to the difference in refractive index from the electrode pattern may be reduced.
  • an insulating layer for forming a bridge electrode may be formed to further reduce refractive index change, and insulation between sensing electrode patterns may be more stably implemented, and cross between neighboring sensing electrode patterns. Signal disturbance by crosstalk can be prevented.
  • the pad 135 may also be formed together through a process for forming the sensing electrode pattern, and may prevent corrosion and oxidation of the surface of the pad 135 when exposed to the outside by the third transparent metal oxide pattern 127. have.
  • FIG. 13 is a schematic diagram illustrating light reflection in a film touch sensor according to embodiments of the present disclosure.
  • FIGS. 12 and 13 the illustration of the light refraction at the interface of each layer is omitted. 12 and 13, for example, a region in which sensing electrode patterns are formed is represented by a pattern region I ′, and a region in which sensing electrode patterns are not formed is represented by a non-pattern region I ′′.
  • the sensing electrode patterns may be viewed according to the difference in reflectance between the pattern region I 'and the non-pattern region I' '.
  • the refractive index matching layer 140 may be disposed between the transparent metal oxide layer 120b and the insulating layer 145 in the pattern region I ′, for example. have. As the refractive index matching layer 140 reduces or buffers the degree of change of the refractive index according to the path of light, the amount of reflected light generated at the interface of each layer may be reduced.
  • embodiments of the present invention provide a touch screen panel and an image display device including the film touch sensor.
  • the film touch sensor may be directly stacked as a sensor layer or inserted as a touch screen panel on various image display devices such as a liquid crystal display, an electroluminescent display, a plasma display, and a field emission display.
  • the film touch sensor may be disposed between the window film and the display panel of the image display device.
  • the film touch sensor includes a metal nanowire layer, and thus has improved bending characteristics and flexibility, and can be effectively applied to a flexible display.
  • a protective layer composition (40 parts by weight of a polyfunctional acrylic monomer and 60 parts by weight of an epoxy resin is mixed on the separation layer, and 30 parts by weight and 40 parts by weight of diethylene glycol methylethyl ether (MEDG), PGMEA and 3-methoxybutanol, respectively). Parts, prepared so that the solid content has a proportion of 20 parts by weight to a solvent mixed with 30 parts by weight), and the photocuring is applied by UV irradiation at 200mJ / cm 2 , UV cured at 230 °C 30 minutes dry curing To form a protective layer.
  • EMG diethylene glycol methylethyl ether
  • a composition including silver nanowires having a diameter of 10 to 20 nm, a binder resin, a polymerization initiator, and a solvent was applied onto the protective layer and cured to form a silver nanowire layer having a thickness of 50 nm.
  • ITO was deposited on the silver nanowire layer to a thickness of 35 nm at 25 ° C., and the first and second sensing electrode patterns were formed by annealing the ITO layer at 180 ° C. for 30 minutes.
  • a refractive index matching liquid obtained by mixing SiO 2 and zirconium oxide in an amount of 4 parts by weight based on 100 parts by weight of a photoresist composition (NT-1200H, manufactured by TORAY) was formed.
  • the refractive index matching solution was applied to the ITO layer, exposed in a predetermined pattern, and cured to form a refractive index matching layer, followed by etching using a phosphate acetate-based etching solution (MA-PSW01, manufactured by Dongwoo Finechem Co., Ltd.).
  • An insulating layer was formed on the refractive index matching layer with an acrylic epoxy clock polymer (LT09, manufactured by Dongwoo Finechem Co., Ltd.).
  • the LT09 was applied to a thickness of 2 ⁇ m with a spin coater and prebaked at 100 ° C. for 2 minutes in a convection oven. Then, it exposed at 40mj / cm ⁇ 2> (i-ray reference
  • a bridge electrode was formed on the insulating layer using silver, copper, and palladium alloy (APC), and then connected to the second sensing electrode pattern through a contact hole formed in the insulating layer.
  • APC palladium alloy
  • a passivation layer including silicon oxide was formed on the insulating layer and the bridge electrode.
  • CEL2021P ((3,4-Epoxycyclohenaxane) methyl 3,4-Epoxy cyclohexylcarboxylate) and 20 parts by weight of NPGDGE (Neo-Pentyl Glycol DiGlycidyl Ether) containing a polymerization initiator SP500 and a leveling agent KRM230 on the passivation layer.
  • NPGDGE Neo-Pentyl Glycol DiGlycidyl Ether
  • KRM230 leveling agent
  • 60 ⁇ m of the pressure-sensitive adhesive composition containing 10 parts by weight of 1,6-hexanediol diacrylate, 5 parts by weight of trimethylol propane triacrylate, 10 parts by weight of KRM0273 as an adhesion agent, and 5 parts by weight of 4-HBVE as a dilution monomer.
  • a separation layer and a protective layer were formed on a carrier substrate.
  • the refractive index matching liquid used in the example was applied onto the protective layer, and exposed and cured in a predetermined pattern to form a refractive index matching layer.
  • the silver nanowire layer and the ITO layer were formed on the refractive index matching layer in the same manner as in the embodiment, and patterned to form the first and second sensing electrode patterns.
  • An insulating layer was formed on the first and second sensing electrode patterns using the same material and method as in the embodiment, and a bridge electrode was formed on the insulating layer to connect the second sensing electrode patterns.
  • the passivation layer, the adhesion layer, and the TAC film were formed on the insulating layer and the bridge electrode as described in the Examples.
  • protective layer 120a metal nanowire layer
  • first sensing electrode pattern 133 second sensing electrode pattern
  • pad 140 refractive index matching layer
  • insulating layer 150 second electrode pattern layer

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  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
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  • Physics & Mathematics (AREA)
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Abstract

Selon la présente invention, un capteur tactile à film comprend : un film de base ; une première couche de motif d'électrode disposée sur le film de base ; et une couche d'adaptation d'indice de réfraction qui est disposée sur la première couche de motif d'électrode et vers un côté observateur. Au moyen de la couche d'adaptation d'indice de réfraction, un panneau tactile et un dispositif d'affichage d'image qui possèdent une transmittance élevée et une visibilité de motif réduite peuvent être mis en œuvre.
PCT/KR2017/004017 2017-04-13 2017-04-13 Capteur tactile à film et panneau d'écran tactile le comprenant WO2018190448A1 (fr)

Priority Applications (1)

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PCT/KR2017/004017 WO2018190448A1 (fr) 2017-04-13 2017-04-13 Capteur tactile à film et panneau d'écran tactile le comprenant

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PCT/KR2017/004017 WO2018190448A1 (fr) 2017-04-13 2017-04-13 Capteur tactile à film et panneau d'écran tactile le comprenant

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WO2018190448A1 true WO2018190448A1 (fr) 2018-10-18

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100065637A (ko) * 2008-12-08 2010-06-17 삼성전자주식회사 터치 스크린
KR101436025B1 (ko) * 2013-11-12 2014-09-02 에스맥 (주) 터치스크린 패널의 제조 방법
KR20150140372A (ko) * 2013-04-20 2015-12-15 티피케이 터치 솔루션즈 (씨아먼) 인코포레이티드 터치 제어 패널 및 그 제조 방법
KR20150004601U (ko) * 2014-06-17 2015-12-28 헹하오 테크놀로지 씨오. 엘티디 터치 디스플레이
KR101586740B1 (ko) * 2014-11-20 2016-01-20 동우 화인켐 주식회사 필름 터치 센서 및 그의 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100065637A (ko) * 2008-12-08 2010-06-17 삼성전자주식회사 터치 스크린
KR20150140372A (ko) * 2013-04-20 2015-12-15 티피케이 터치 솔루션즈 (씨아먼) 인코포레이티드 터치 제어 패널 및 그 제조 방법
KR101436025B1 (ko) * 2013-11-12 2014-09-02 에스맥 (주) 터치스크린 패널의 제조 방법
KR20150004601U (ko) * 2014-06-17 2015-12-28 헹하오 테크놀로지 씨오. 엘티디 터치 디스플레이
KR101586740B1 (ko) * 2014-11-20 2016-01-20 동우 화인켐 주식회사 필름 터치 센서 및 그의 제조 방법

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