WO2016018030A1 - Capteur tactile à pellicule et son procédé de fabrication - Google Patents

Capteur tactile à pellicule et son procédé de fabrication Download PDF

Info

Publication number
WO2016018030A1
WO2016018030A1 PCT/KR2015/007839 KR2015007839W WO2016018030A1 WO 2016018030 A1 WO2016018030 A1 WO 2016018030A1 KR 2015007839 W KR2015007839 W KR 2015007839W WO 2016018030 A1 WO2016018030 A1 WO 2016018030A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
touch sensor
film
electrode
film touch
Prior art date
Application number
PCT/KR2015/007839
Other languages
English (en)
Korean (ko)
Inventor
유병묵
최용석
윤주인
차진규
Original Assignee
동우 화인켐 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020140176198A external-priority patent/KR101586739B1/ko
Application filed by 동우 화인켐 주식회사 filed Critical 동우 화인켐 주식회사
Publication of WO2016018030A1 publication Critical patent/WO2016018030A1/fr

Links

Images

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means

Definitions

  • the present invention relates to a film touch sensor, and more particularly, to a film touch sensor and a method of manufacturing the same, forming a separation layer on a carrier substrate to perform a process.
  • an ultra-thin flexible display that achieves ultra-light weight, low power and improved portability has been attracting attention as a next-generation display, and development of a touch sensor applicable to such a display has been required.
  • Flexible displays are displays made on flexible substrates that can bend, bend, or roll without loss of properties, and technology development is under way in the form of flexible LCDs, flexible OLEDs, and electronic paper.
  • a touch sensor having excellent bending and resilience and excellent flexibility and elasticity is required.
  • a wiring forming step of forming a metal wiring on the substrate a lamination step of forming a transparent resin substrate by coating and drying the transparent resin solution to cover the metal wiring, and a peeling step of peeling the transparent resin substrate from the substrate.
  • an inorganic peeling material such as an organic peeling material such as a silicone resin or a fluororesin, a diamond like carbon thin film (DLC) thin film or a zirconium oxide thin film is applied to the surface of the substrate.
  • DLC diamond like carbon thin film
  • the method proposed in Korean Patent No. 10-1191865 includes a sacrificial layer, a metal wiring, and a metal layer, which may be removed by light or a solvent in the manufacturing of a flexible substrate having a metal wiring embedded therein. After the polymer material (flexible substrate) is formed on the substrate, the metal wiring and the polymer material (flexible substrate) are peeled off from the substrate by removing the sacrificial layer using light or a solvent.
  • the present invention is to solve the problems of the prior art flexible display manufacturing, forming a separation layer on the carrier substrate to proceed with the process, and when separated from the carrier substrate film touch sensor to be used as a wiring coating layer And a method for producing the same.
  • An object of the present invention is to provide a film touch sensor and a method of manufacturing the same, in which an insulating layer used as a planarization layer is formed on a transparent conductive layer pattern.
  • the present invention provides a touch sensor and a method of manufacturing the same to ensure a high-definition, heat resistance, and to diversify the film substrate, which is impossible in the process of implementing the touch sensor directly on the film substrate because the touch sensor is implemented on the carrier substrate. There is a purpose.
  • the present invention provides a film touch sensor and a method of manufacturing the same to form a separation layer on the carrier substrate to proceed with the touch sensor forming process, and to attach the circuit board after bonding the base film and separating the carrier substrate. Its purpose is.
  • An object of the present invention is to provide a film touch sensor and a method of manufacturing the same by forming a separation layer on a carrier substrate and proceeding the process, and not removing the separation layer even after separation from the carrier substrate. have.
  • Film touch sensor for achieving the above object is a separation layer; An electrode pattern layer formed on the separation layer, the electrode pattern layer including a sensing electrode and a pad electrode formed at one end of the sensing electrode; An insulating layer formed on the electrode pattern layer; A base film formed on the insulating layer; Characterized in that it comprises a.
  • the film touch sensor may further include a protective layer formed between the separation layer and the electrode pattern layer.
  • the insulating layer is characterized in that the elastic modulus difference at 25 ° C. with the protective layer is 300 MPa or less.
  • the insulating layer is characterized in that the elastic modulus difference at 25 ° C. with the protective layer is 100 MPa or less.
  • the film touch sensor may further include a pad pattern layer formed under the pad electrode.
  • the pad pattern layer may be formed of one or more materials selected from metals, metal nanowires, metal oxides, carbon nanotubes, graphene, conductive polymers, and conductive inks.
  • the pad pattern layer may be two or more conductive layers.
  • the insulating layer is formed to cover the electrode pattern layer, and the surface opposite to the surface contacting the electrode pattern layer is flat.
  • the insulating layer may be formed of at least one material selected from an organic insulating layer and an inorganic insulating layer.
  • the electrode pattern layer is characterized in that the transparent conductive layer.
  • the transparent conductive layer may be formed of one or more materials selected from metals, metal nanowires, metal oxides, carbon nanotubes, graphene, conductive polymers, and conductive inks.
  • the electrode pattern layer may further include a bridge electrode.
  • the electrode pattern layer may be two or more conductive layers.
  • the separation layer is formed on the carrier substrate first, characterized in that formed separately from the carrier substrate.
  • the separation layer is characterized in that the peel force with the carrier substrate is 1N / 25mm or less.
  • the separation layer is characterized in that the peel force with the carrier substrate is 0.1N / 25mm or less.
  • the separation layer is characterized in that the surface energy of the carrier substrate and the peeling after 30 to 70 mN / m.
  • the surface energy difference between the separation layer and the carrier substrate is characterized in that more than 10 mN / m.
  • the carrier substrate may be a glass substrate.
  • the separation layer is characterized in that the polymer organic membrane.
  • the polymer organic film is polyimide, polyvinyl alcohol, polyamic acid, polyamide, polyethylene, polystylene, polynorbornene ), Phenylmaleimide copolymer, polyazobenzene, polyphenylenephthalamide, polyester, polymethyl methacrylate, polyarylate, Cinnamate-based polymers, coumarin-based polymers, phthalimidine-based polymers, chalcone-based polymers and aromatic acetylene-based polymer materials include one or more materials selected from the group.
  • the thickness of the separation layer is characterized in that 10 to 1000nm.
  • the thickness of the separation layer is characterized in that 50 to 500nm.
  • the film touch sensor may further include a circuit board electrically connected to the pad electrode.
  • the circuit board may be electrically connected to the pad electrode through the separation layer.
  • the circuit board may be electrically connected to the pad electrode through the pad pattern layer.
  • the base film may be any one of a polarizing plate, an isotropic film, a retardation film, and a protective film.
  • the film touch sensor may further include an adhesive layer formed between the insulating layer and the base film.
  • the adhesive layer is characterized in that it is formed of an adhesive or an adhesive.
  • the method for manufacturing a film touch sensor according to the present invention for achieving the above object comprises a separation layer forming step of forming a separation layer on a carrier substrate; An electrode pattern layer forming step of forming an electrode pattern layer including a sensing electrode and a pad electrode on the separation layer; An insulating layer forming step of forming an insulating layer on the electrode pattern layer; A base film attaching step of attaching a base film on the insulating layer; And a carrier substrate removing step of separating the separation layer from the carrier substrate. Characterized in that it comprises a.
  • the base film attaching step is characterized in that the base film and the insulating layer is bonded by an adhesive.
  • the base film attaching step is characterized in that the base film and the insulating layer is bonded by an adhesive.
  • the method of manufacturing the film touch sensor includes a protective layer forming step of forming a protective layer on the separation layer after the separation layer forming step; Removing a portion of the protective layer to expose a separation layer by partially removing the protective layer in a region corresponding to the portion where the pad electrode is to be formed;
  • the electrode pattern layer forming step may further include forming an electrode pattern layer on the protective layer and the exposed separation layer.
  • the manufacturing method of the film touch sensor includes a protective layer forming step of forming a protective layer on top of the separation layer after the separation layer forming step; Further, wherein the protective layer forming step is formed so that the separation layer of the region where the pad electrode is to be formed is partially exposed, the electrode pattern layer forming step of forming an electrode pattern layer on the protective layer and the exposed separation layer It is characterized by.
  • the method of manufacturing the film touch sensor includes: forming a pad pattern layer in advance on a portion where the pad electrode is to be formed; It may further include.
  • the removing of the carrier substrate may be performed by separating the separation layer from the carrier substrate by using a lift-off or peel-off method.
  • the removing of the carrier substrate is characterized in that to separate the separation layer with a force of less than 1N / 25mm from the carrier substrate.
  • the method of manufacturing the film touch sensor includes: a circuit board bonding step of bonding a circuit board to the pad electrode after the carrier substrate removing step; It may further include.
  • the manufacturing method of the film touch sensor may include a circuit board bonding step of bonding a circuit board to the pad pattern layer after the carrier substrate removing step; It may further include.
  • Such a film touch sensor and a manufacturing method thereof according to the present invention has the following effects.
  • a process of forming a separation layer on a carrier substrate is performed, and when the separation layer is separated from a carrier substrate, the separation layer may be used as a wiring coating layer, thereby improving efficiency and productivity of the process.
  • an insulating layer used as a planarization layer may be formed on the transparent conductive layer pattern to increase the efficiency of the touch sensor manufacturing process.
  • a process for implementing a touch sensor on a carrier substrate may be performed to secure high definition and heat resistance, and may diversify the film substrate.
  • the pad pattern layer may be formed of one layer or a plurality of laminates of metals or metal oxides on the separation layer, thereby effectively reducing contact resistance with the circuit board and increasing process stability.
  • the circuit board may be attached to the pad pattern layer to increase the efficiency of the process.
  • a separate separation layer removal process is not performed after separation from the carrier substrate, thereby simplifying the process and solving the problem applied to the touch sensor region in the removal process.
  • 1 to 4 are structural cross-sectional views of the film touch sensor according to an embodiment of the present invention.
  • 5A to 5K are cross-sectional views illustrating a method of manufacturing a film touch sensor according to the present invention.
  • 1 to 4 are structural cross-sectional views of the film touch sensor according to the embodiment of the present invention.
  • a separation layer is formed on a carrier substrate and a touch sensor forming process is performed.
  • the separation layer is used as a wiring coating layer so that a high-definition and heat resistance is impossible in a process of implementing a touch sensor directly on a film substrate. It is to ensure that the film base material can be diversified.
  • the present invention is to form a pad pattern layer consisting of a metal or metal oxide on the separation layer as a single layer or a plurality of laminates to effectively reduce the contact resistance with the circuit board and increase the stability of the process.
  • Film touch sensor for this purpose, as shown in Figure 1, the separation layer; An electrode pattern layer formed on the separation layer, the electrode pattern layer including a sensing electrode and a pad electrode formed at one end of the sensing electrode; An insulating layer formed on the electrode pattern layer; A base film formed on the insulating layer; Characterized in that it comprises a.
  • the separation layer is a polymer organic membrane, for example, polyimide, poly vinyl alcohol, polyamic acid, polyamide, polyamide, polyethylene, polystylene ), Polynorbornene, phenylmaleimide copolymer, polyazobenzene, polyphenylenephthalamide, polyester, polymethyl methacrylate, At least one selected from the group consisting of polyarylate, cinnamate-based polymer, coumarin-based polymer, phthalimidine-based polymer, chalcone-based polymer and aromatic acetylene-based polymer material Contains substances.
  • the separation layer 20 is coated on the carrier substrate 10, an electrode pattern layer or the like is formed thereon, and finally, the separation layer 20 is separated from the carrier substrate 10.
  • the separation force of the separation layer 20 is preferably 1 N / 25 mm or less, more preferably 0.1 N / 25 mm or less. That is, the separation layer 20 is preferably formed of a material such that the physical force applied when the separation layer 20 and the carrier substrate 10 are separated does not exceed 1 N / 25 mm, particularly 0.1 N / 25 mm.
  • the separation layer 20 may not be neatly separated upon separation from the carrier substrate, and the separation layer 20 may remain on the carrier substrate, and the separation layer 20 may be This is because cracks may occur in at least one of the protective layer 30, the electrode pattern layer 50, and the insulating layer 70.
  • the peeling force of the separation layer 20 is more preferably 0.1 N / 25 mm or less, more preferably 0.1 N / 25 mm or less in terms of controllable curl generated in the film after peeling from the carrier substrate.
  • Curls do not cause problems in terms of film touch sensor functionality, but it is advantageous to generate less curl because it may lower the process efficiency in processes such as bonding and cutting processes.
  • the thickness of the separation layer 20 is preferably 10 to 1000 nm, more preferably 50 to 500 nm. If the thickness of the separation layer 20 is less than 10 nm, the uniformity during application of the separation layer may be poor, or the electrode pattern may be unevenly formed, or the peeling force may be locally increased to cause tearing, or after separation from the carrier substrate, There is a problem that curl is not controlled. And when the thickness exceeds 1000nm, there is a problem that the peeling force is no longer lowered, there is a problem that the flexibility of the film is lowered.
  • the separation layer preferably has a surface energy of 30 to 70 mN / m after separation of the carrier substrate, and the difference in surface energy between the separation layer and the carrier substrate is preferably 10 mN / m or more.
  • the separation layer must be stably in close contact with the carrier substrate in the film touch sensor manufacturing process until the film is peeled off from the carrier substrate, and easily peeled off to prevent tearing or curling of the film touch sensor during peeling from the carrier substrate. do.
  • the surface energy of the separation layer is 30 to 70 mN / m, the peeling force can be adjusted, and the adhesion between the protective layer or the electrode pattern layer adjacent to the separation layer is secured, thereby improving process efficiency.
  • the surface energy difference between the separation layer and the carrier substrate is 10mN / m or more can be peeled off smoothly from the carrier substrate to prevent tearing of the film touch sensor or cracks that may occur in each layer of the film touch sensor.
  • An electrode pattern layer 50 is formed on the separation layer 20, and the separation layer 20 functions as a coating layer covering the electrode pattern layer 50 after separation from the carrier substrate or the electrode pattern layer 50. It acts as a protective layer to protect it from external contact.
  • At least one protective layer 30 may be further formed on the separation layer 20. Since the separation layer 20 alone may be difficult to protect the electrode pattern against contact or impact from the outside, one or more protective layers 30 may be formed on the separation layer 20.
  • the protective layer 30 may include at least one of an organic insulating layer and an inorganic insulating layer, and may be formed by a method of coating and curing or deposition.
  • the protective layer may be formed by partially removing the portion where the pad electrode is to be formed by a method such as patterning or by applying except for the portion where the pad electrode is to be formed.
  • a protective layer may be formed to expose the separation layer. This is because the circuit board and the pad electrode can be smoothly connected at the time of the circuit board connection.
  • the pad pattern layer 40 may be formed under the pad electrode.
  • the pad pattern layer may be provided for the purpose of lowering the contact resistance when the circuit board and the pad electrode are connected.
  • the pad pattern layer may be omitted if the contact resistance is sufficiently low when the pad electrode and the circuit board are connected.
  • the pad pattern layer 40 may be formed of one or more materials selected from metals, metal nanowires, metal oxides, carbon nanotubes, graphene, conductive polymers, and conductive inks.
  • the metal may be any one of gold (Au), silver (Ag), copper (Cu), molybdenum (Mo), aluminum, palladium, neodium, and silver-palladium-copper alloy (APC).
  • the metal nanowires may be any one of silver nanowires, copper nanowires, zirconium nanowires, and gold nanowires.
  • the metal oxide is indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), aluminum zinc oxide (AZO), gallium zinc oxide (GZO), florin tin oxide (FTO), zinc oxide (ZnO), indium tin oxide-silver-indium tin oxide (ITO-Ag-ITO), indium zinc oxide-silver-indium zinc oxide (IZO-Ag-IZO), indium zinc tin oxide-silver-indium zinc tin oxide ( IZTO-Ag-IZTO) and aluminum zinc oxide-silver-aluminum zinc oxide (AZO-Ag-AZO).
  • the pad pattern layer 40 may be formed of a carbon-based material including carbon nanotubes (CNT) or graphene.
  • the conductive polymer may include polypyrrole, polythiophene, polyacetylene, PODOT or polyaniline.
  • the conductive ink is an ink in which a metal powder and a curable polymer binder are mixed, and an electrode may be formed using the ink.
  • the pad pattern layer 40 is formed in the form of the first pad pattern layer 41 and the second pad pattern layer 42 as shown in FIGS. 2A and 2B to reduce electrical resistance and reduce contact resistance with the circuit board. It may be composed of the above conductive layer.
  • An example of a specific laminated structure of the pad pattern layer 40 is as follows. A structure in which a metal oxide is stacked and a metal is stacked thereon, a metal is stacked and a metal oxide is stacked thereon, a metal is stacked and a metal oxide is stacked thereon, and a metal is further stacked thereon, And a structure in which a metal oxide is stacked, a metal is stacked on the top, and a metal oxide is further stacked on the top.
  • the electrode pattern layer 50 is formed on the separation layer 20 or the protection layer 30.
  • the electrode pattern layer 50 includes a sensing electrode SE for detecting whether a touch is detected and a pad electrode PE formed at one end of the sensing electrode SE.
  • the sensing electrode SE may include not only an electrode for sensing a touch but also a wiring pattern connected to the electrode.
  • the pad electrode PE may be electrically connected to the circuit board.
  • the electrode pattern layer 50 is a transparent conductive layer and may be formed of one or more materials selected from metals, metal nanowires, metal oxides, carbon nanotubes, graphene, conductive polymers, and conductive inks.
  • the metal may be any one of gold (Au), silver (Ag), copper (Cu), molybdenum (Mo), aluminum, palladium, neodium, and silver-palladium-copper alloy (APC).
  • the metal nanowires may be any one of silver nanowires, copper nanowires, zirconium nanowires, and gold nanowires.
  • the metal oxide is indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), aluminum zinc oxide (AZO), gallium zinc oxide (GZO), florin tin oxide (FTO), zinc oxide (ZnO), indium tin oxide-silver-indium tin oxide (ITO-Ag-ITO), indium zinc oxide-silver-indium zinc oxide (IZO-Ag-IZO), indium zinc tin oxide-silver-indium zinc tin oxide ( IZTO-Ag-IZTO) and aluminum zinc oxide-silver-aluminum zinc oxide (AZO-Ag-AZO).
  • the electrode pattern layer 50 may be formed of a carbon-based material including carbon nanotubes (CNT) or graphene.
  • the conductive polymer may include polypyrrole, polythiophene, polyacetylene, PODOT or polyaniline.
  • the conductive ink is an ink in which a metal powder and a curable polymer binder are mixed, and an electrode may be formed using the ink.
  • the electrode pattern layer 50 may be formed of two or more conductive layers in the form of the first electrode layer 51 and the second electrode layer 52 as shown in FIG. 2A.
  • the electrode pattern layer 50 may be formed of one layer of ITO, AgNW (silver nanowire), or a metal mesh.
  • the first electrode layer 51 may be formed of a transparent metal such as ITO.
  • the second electrode layer 52 may be formed using an metal, AgNW, or the like on the ITO electrode layer in order to form an oxide and further lower the electrical resistance.
  • the electrode pattern layer may be included. More specifically, the electrode pattern layer may be formed by forming a transparent conductive layer of a metal or a metal oxide on the separation layer or the protective layer, and then further laminating the transparent conductive layer to form an electrode pattern, or one or more layers on the separation layer or the protective layer. After stacking the transparent conductive layer, the transparent conductive layer may be further formed of a metal or a metal oxide to form an electrode pattern. Specific examples of the laminated structure of the electrode pattern is as follows.
  • a structure in which a metal or metal oxide pattern layer is further formed between the separation layer and the electrode pattern layer a structure in which a metal or metal oxide pattern layer is further formed between the electrode pattern layer and the insulating layer, a metal or between the protective layer and the electrode pattern layer
  • the metal oxide pattern layer may be further formed, and may further include at least one electrode pattern layer made of a transparent conductive material.
  • the specific example of the laminated structure of the applicable electrode pattern layer 50 is as follows.
  • the electrode lamination structure includes a signal processing of a touch sensor, It can be changed in consideration of the resistance and is not limited to the above-described laminated structure.
  • an electrical insulation layer may be formed between the first electrode pattern layer and the second electrode pattern layer, and the second conductive layer may be formed as a bridge electrode by patterning the electrical insulation layer to form a contact hole.
  • the pattern structure of the electrode pattern layer is preferably an electrode pattern structure used in the capacitive method, a mutual capacitance method (self-capacitance) or a self-capacitance method (self-capacitance) may be applied.
  • the grid electrode structure may have a horizontal axis and a vertical axis.
  • the intersection of the horizontal and vertical electrodes may include a bridge electrode, or the horizontal and vertical electrode pattern layers may be formed to be electrically spaced apart from each other.
  • the electrode layer structure may be a method of reading capacitance change by using one electrode at each point.
  • the electrode pattern layer 50 may have a structure in which a photosensitive resist 60 is formed on the upper portion as shown in FIG. 2B.
  • the electrode pattern layer 50 may be formed by photolithography or the like, and may be removed or remain after forming the electrode pattern layer according to the type of photosensitive resist.
  • the photosensitive resist may serve to protect the electrode pattern layer.
  • An insulating layer 70 is formed on the electrode pattern layer 50.
  • the insulating layer may serve to prevent corrosion of the electrode pattern and protect the surface of the electrode pattern.
  • the insulating layer 70 is preferably formed to a certain thickness to fill the gap between the electrode or the wiring. That is, the surface opposite to the surface contacting the electrode pattern layer 50 is preferably formed flat so that the unevenness of the electrode is not exposed.
  • the elasticity modulus difference in 25 degreeC of the said protective layer 30 and the said insulating layer 70 is 300 Mpa or less, and it is more preferable that it is 100 Mpa or less. This is to suppress the occurrence of cracks due to the difference in stress solving ability of each layer, the reason for the elastic modulus difference between the protective layer and the insulating layer to be less than 300MPa at 25 °C when the elastic modulus difference exceeds 300MPa, the stress between the two layers This is because there is an imbalance in the resolution capacity and cracks occur.
  • the reason for measuring the elastic modulus difference at 25 °C is because the crack should not occur in the environment used by the user.
  • the insulating layer is not particularly limited as long as it is an organic insulating material satisfying that the difference in elastic modulus from the protective layer is 300 Mpa or less, but the insulating layer is preferably a thermosetting or UV curing organic polymer.
  • the insulating layer may be formed of one or more materials selected from epoxy compounds, acrylic compounds, melamine compounds, and the like.
  • the insulating layer 70 may itself function as an adhesive layer made of an adhesive or an adhesive.
  • the insulating layer may include at least one material selected from the group consisting of polyester, polyether, polyurethane, epoxy, silicone, and acrylic.
  • the base film 100 may be directly bonded on the insulating layer 70 as shown in FIGS. 1 and 2.
  • a separate adhesive layer 80 may be formed between the insulating layer 70 and the base film 100 to thereby be bonded thereto.
  • the adhesive layer 80 may be formed of an adhesive or an adhesive, and may be either a thermosetting type or a UV curing type.
  • the adhesive layer may be first formed on one surface of the base film 100, and then the base film may be attached.
  • An NCF (Non Carrier Film) type adhesive film or adhesive film may be used.
  • the base film 100 may be attached by coating an adhesive layer on an upper surface of the insulating layer, and may be applied by coating an OCR (Optically Clear Resin) type liquid adhesive and covering and curing the base film.
  • the adhesive or pressure-sensitive adhesive used for bonding the base film 100 is preferably polyester, polyether, polyurethane, epoxy, silicone, or acrylic material.
  • the base film 100 may be a transparent film or a polarizing plate.
  • polyester-based resins such as polyethylene terephthalate, polyethylene isophthalate, polyethylene naphthalate, and polybutylene terephthalate; Cellulose resins such as diacetyl cellulose and triacetyl cellulose; Polycarbonate resins; Acrylic resins such as polymethyl (meth) acrylate and polyethyl (meth) acrylate; Styrene resins such as polystyrene and acrylonitrile-styrene copolymers; Polyolefin-based resins such as polyethylene, polypropylene, cyclo-based or norbornene-structured polyolefins, ethylene-propylene copolymers; Vinyl chloride-based resins; Amide resins such as nylon and aromatic polyamides; Imide resin; Polyether sulfone resin; Sulfone resins; Polyether ether ketone resins;
  • thermosetting resin or ultraviolet curable resin such as (meth) acrylic-type, urethane type, acrylurethane type, epoxy type, and silicone type
  • the thickness of such a transparent film can be determined suitably, it is generally 1-500 micrometers in terms of workability, thinness, etc., such as strength and handleability. 1-300 micrometers is especially preferable, and 5-200 micrometers is more preferable.
  • Such a transparent film may contain an appropriate one or more additives.
  • an additive a ultraviolet absorber, antioxidant, a lubricant, a plasticizer, a mold release agent, a coloring agent, a flame retardant, a nucleating agent, an antistatic agent, a pigment, a coloring agent, etc. are mentioned, for example.
  • the transparent film may have a structure including various functional layers such as a hard coating layer, an antireflection layer, and a gas barrier layer on one or both surfaces of the film, and the functional layer is not limited to the above-described ones, and various functional layers It may include.
  • the transparent film may be surface-treated as needed.
  • Such surface treatments include dry treatments such as plasma treatments, corona treatments, primer treatments, and chemical treatments such as alkali treatments including saponification treatments.
  • the transparent film may be an isotropic film, a retardation film or a protective film.
  • in-plane retardation [(nx-ny) ⁇ d], nx, ny are principal refractive indices in the film plane, nz is refractive index in the film thickness direction, and d is film thickness
  • Retardation film is a film manufactured by the method of uniaxial stretching, biaxial stretching, polymer coating, liquid crystal coating of polymer film, and is generally used for improving and adjusting optical characteristics such as viewing angle compensation, color improvement, light leakage improvement, color taste control of display. do.
  • the type of retardation film includes a wave plate such as 1/2 or 1/4, a positive C plate, a negative C plate, a positive A plate, a negative A plate, and a biaxial wave plate.
  • the protective film may be a film including an adhesive layer on at least one surface of a film made of a polymer resin, or a film having a self-adhesive property such as polypropylene, and may be used for protecting the touch sensor surface and improving processability.
  • a polarizing plate As a polarizing plate, a well-known thing used for a display panel can be used.
  • a polyvinyl alcohol film is drawn to form a protective layer on at least one surface of a polarizer dyed with iodine or a dichroic dye, a liquid crystal is oriented so as to have a polarizer performance, and a polyvinyl alcohol on a transparent film And those made by coating an orientation resin such as the like and stretching and dyeing the same, but are not limited thereto.
  • the film touch sensor of the present invention can be electrically connected to the circuit board, as shown in FIG.
  • the circuit board may be a flexible printed circuit board (FPCB) as an example, and serves to electrically connect the touch control circuit and the film touch sensor of the present invention.
  • the film touch sensor can be bonded to the circuit board using a conductive adhesive.
  • An electrode corresponding to the pad electrode PE is formed at one end of the circuit board 110, and is electrically connected to the pad electrode PE by a conductive adhesive. In addition, it may be connected through the pad pattern layer 40 to reduce the contact resistance between the pad electrode and the circuit board.
  • the circuit board is bonded to the pad pattern layer as shown in FIG. 4, and may be connected through a separation layer.
  • the method of attaching the circuit board through the pad pattern layer when attaching the circuit board to the pad electrode is to lower the contact resistance between the circuit board and the pad electrode and may be selectively applied according to a manufacturing process and a product specification.
  • the circuit board may be connected to the exposed pad electrode or pad pattern layer by removing the separation layer.
  • a process of removing the separation layer 20 may be a wet etching process, and an etching solution may be selected according to the material of the separation layer 20.
  • the material of the separation layer 20 is a polyimide polymer, a polyvinyl alcohol polymer, a polyamic acid polymer, or the like
  • it can be removed with basic chemical solutions such as KOH, TMAH, amines, and the like.
  • basic chemical solutions such as KOH, TMAH, amines, and the like.
  • a polymer, a coumarin-based polymer, a chalcone-based polymer, an aromatic acetylene-based polymer, or the like it can be removed with an acidic chemical solution such as phosphoric acid, acetic acid, and nitric acid.
  • 5A through 5K are cross-sectional views illustrating a method of manufacturing a film touch sensor according to the present invention, and a method of manufacturing the film touch sensor according to the present invention will be described in detail with reference to the drawings.
  • a separation layer 20 is formed by first applying a polymer organic film on the carrier substrate 10.
  • a known coating method can be used as a method of applying the separation layer.
  • the carrier substrate 10 is preferably a glass substrate, but is not limited to the glass substrate and other substrates may be used as the carrier substrate 10. However, a material having heat resistance that does not deform even at high temperatures, that is, maintains flatness, is preferable to withstand the process temperature at the time of electrode formation.
  • the curing process for forming such a separation layer 20 may be used by thermosetting or UV curing alone, or a combination of thermosetting and UV curing.
  • an organic insulating material is coated on the separation layer to form the protective layer 30.
  • the region where the pad pattern layer 40 is to be formed is patterned.
  • the protective layer 30 may be removed by patterning or the like to form a pad pattern layer for circuit connection, or may be applied except for a portion where the pad pattern layer is to be formed.
  • the pad pattern layer for connection with the circuit board can be formed in the portion where the protective layer is not formed.
  • the protective layer is patterned and removed.
  • the metal layer is deposited on the region where the protective layer and the protective layer are patterned and removed, and the pad pattern layer 40 is formed by leaving the metal layer only in the region where the protective layer is patterned.
  • the pad pattern layer 40 may be formed of one or more materials selected from metal nanowires, metal oxides, carbon nanotubes, graphene, conductive polymers, and conductive inks, and may include one or two or more conductive layers in consideration of electrical resistance. It can be formed as. In the case of one layer, the pad pattern layer may be formed of one or more materials selected from metals and metal oxides. In the case of two layers, for example, the first pad pattern layer 41 may be formed of copper, and the second pad pattern layer 42 may be formed of a material having better conductivity than the electrode material. In addition, the pad pattern layer may be omitted if the pad electrode is formed of a material having a low resistance and the contact resistance is sufficiently low at the time of circuit connection. In the present embodiment, the pad pattern layer has a laminated structure of two layers.
  • An electrode pattern layer is then formed on the protective layer and the pad pattern layer.
  • a silver nanowire (AgNW) transparent conductive layer is formed as the first electrode layer 51, and metal is deposited as a second electrode layer 52 thereon. Then, as illustrated in FIG. 5F, the photosensitive resist 60 is formed on the metal conductive layer. Thereafter, the electrode pattern layer 50 is selectively formed through a photolithography process, as shown in FIG. 5G.
  • AgNW silver nanowire
  • the transparent conductive layer is a sputtering process such as chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma enhanced chemical vapor deposition (PECVD), screen printing, gravure printing, reverse offset, and reverse offset.
  • CVD chemical vapor deposition
  • PVD physical vapor deposition
  • PECVD plasma enhanced chemical vapor deposition
  • screen printing gravure printing
  • reverse offset reverse offset
  • reverse offset reverse offset
  • a mask having a desired electrode pattern shape is disposed on a substrate and subjected to a sputtering process.
  • a pattern layer can also be formed.
  • a conductive layer may be formed on the entire surface by the film forming method, and an electrode pattern layer may be formed using a photolithography method.
  • the photosensitive resist 60 a negative type photosensitive resist or a positive type photosensitive resist may be used. After the patterning process, the photosensitive resist may remain on the electrode pattern layer 50 as necessary. May be removed. In this embodiment, the negative photosensitive resist is used to describe a laminate structure remaining on the electrode pattern after the patterning process.
  • the electrode pattern formation may further add an additional electrode pattern forming process according to the electrode pattern structure.
  • the insulating layer 70 is formed to cover the electrode pattern layer 50.
  • the thickness of the insulating layer 70 is the same or thicker than the thickness of the electrode so that the upper surface of the insulating layer is formed to have a flat shape. That is, an insulating material having proper viscoelasticity should be used so that the unevenness of the electrode is not transferred.
  • a liquid material that becomes an insulating layer is coated on the electrode pattern layer, and an insulating layer is formed by a method such as thermosetting or UV curing.
  • a well-known coating method can be used as a method of apply
  • an adhesive layer 80 is formed on the insulating layer 70 to attach the base film 100.
  • the adhesive layer 80 may first be formed on one surface of the base film 100, and then the base film may be attached.
  • An NCF (Non Carrier Film) type adhesive film or adhesive film may be used.
  • the base film 100 may be attached by coating the adhesive layer 80 on the insulating layer 70.
  • An OCR (Optically Clear Resin) type liquid adhesive may be applied and the base film may be covered and cured. .
  • the separation layer 20 on which the electrode is formed is separated from the carrier substrate 10 used to proceed the manufacturing process of the touch sensor.
  • the separation layer 20 is separated using a method of peeling from the carrier substrate 10.
  • the peeling method is a method of lift-off or peel-off, but is not limited thereto.
  • the magnitude of the force applied during peeling may vary depending on the peeling force of the separation layer, but is preferably 1 N / 25 mm or less, more preferably 0.1 N / 25 mm or less.
  • the film touch sensor may be torn when peeling from the carrier substrate. Excessive force may be applied to the film touch sensor and the film touch sensor may be deformed and may not function as a device. have.
  • the film touch sensor and the circuit board 110 may be bonded.
  • the film touch sensor may be bonded to the circuit board 110 using a conductive adhesive.
  • a conductive adhesive means that conductive fillers, such as gold, silver, copper, nickel, carbon, aluminum, and plating, are disperse
  • the circuit board 110 may be connected to the pad electrode PE through the separation layer 20, or the pad electrode through the pad pattern layer 40 formed under the pad electrode PE through the separation layer 20. (PE) can be connected.
  • the pad electrode PE and the circuit board 110 are connected through the pad pattern layer 40. That is, the present embodiment describes that the pad electrode PE and the circuit board 110 are connected by the circuit board being bonded to the pad pattern layer through the separation layer by the conductive adhesive.
  • the film touch sensor manufactured according to the present invention may be used by being disposed so that the base film is positioned at the viewer side when the display panel is bonded to the display panel, and may be arranged to be attached to the display panel.
  • the separation layer may be bonded to another optical film, for example, a polarizing plate, a transparent film, or the like.
  • Such a film touch sensor and a method of manufacturing the same according to the present invention implements a touch sensor on a carrier substrate, thereby securing a high definition and heat resistance, which is impossible in a process of implementing a touch sensor directly on a film substrate, and thus allowing the film substrate to be diversified.
  • the substrate film having low heat resistance can also be used after bonding to form the electrode.
  • the circuit board may be attached through the separation layer after separation from the carrier substrate without removing the separation layer formed on the carrier substrate, or the efficiency of the process may be increased by removing the separation layer and attaching the circuit board. have.
  • the separation force and the surface energy of the separation layer in the progress of the process may be parameterized to increase the efficiency of the process and to prevent cracking.

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Laminated Bodies (AREA)

Abstract

La présente invention porte sur un capteur tactile à pellicule dans lequel une couche de séparation est formée sur un substrat porteur afin de conduire un processus, et la couche de séparation sert de couche de revêtement de câble lorsqu'elle est séparée du substrat porteur, et sur un procédé de fabrication du capteur tactile à pellicule, et le capteur tactile à pellicule comprend : la couche de séparation ; une couche de motif d'électrode formée sur la couche de séparation et incluant une électrode de détection et une électrode de pastille formée à une extrémité de l'électrode de détection ; une couche d'isolation formée sur la couche de motif d'électrode ; et une pellicule de base formée sur la couche d'isolation, un substrat de circuit étant électriquement connecté à l'électrode de pastille.
PCT/KR2015/007839 2014-07-31 2015-07-28 Capteur tactile à pellicule et son procédé de fabrication WO2016018030A1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR10-2014-0098592 2014-07-31
KR20140098592 2014-07-31
KR20140162962 2014-11-20
KR10-2014-0162962 2014-11-20
KR1020140176198A KR101586739B1 (ko) 2014-07-31 2014-12-09 필름 터치 센서 및 그의 제조 방법
KR10-2014-0176198 2014-12-09

Publications (1)

Publication Number Publication Date
WO2016018030A1 true WO2016018030A1 (fr) 2016-02-04

Family

ID=55217835

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2015/007839 WO2016018030A1 (fr) 2014-07-31 2015-07-28 Capteur tactile à pellicule et son procédé de fabrication

Country Status (1)

Country Link
WO (1) WO2016018030A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110168357A (zh) * 2017-01-11 2019-08-23 Lg电子株式会社 传感器
CN110275649A (zh) * 2018-03-16 2019-09-24 东友精细化工有限公司 高分辨率触摸传感器
US11225555B2 (en) 2015-05-12 2022-01-18 Basf Se Caprolactam formulations

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000003944A (ja) * 1998-06-15 2000-01-07 Japan Electronic Materials Corp フレキシブル基板の製造方法
KR20070054661A (ko) * 2004-09-10 2007-05-29 군제 가부시키가이샤 터치 패널 및 터치 패널용 필름재료의 제조방법
KR20110008453A (ko) * 2009-07-20 2011-01-27 (주) 월드비젼 윈도우 패널 일체형 정전용량방식 터치센서 및 그 제조방법
KR20120032735A (ko) * 2010-09-29 2012-04-06 삼성모바일디스플레이주식회사 터치 스크린 패널 및 그 제조방법
KR20140008607A (ko) * 2012-07-09 2014-01-22 한국기계연구원 희생 기판을 이용한 금속 배선이 함입된 유연 기판 제조 방법 및 이에 의해 제조된 금속 배선이 함입된 유연 기판

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000003944A (ja) * 1998-06-15 2000-01-07 Japan Electronic Materials Corp フレキシブル基板の製造方法
KR20070054661A (ko) * 2004-09-10 2007-05-29 군제 가부시키가이샤 터치 패널 및 터치 패널용 필름재료의 제조방법
KR20110008453A (ko) * 2009-07-20 2011-01-27 (주) 월드비젼 윈도우 패널 일체형 정전용량방식 터치센서 및 그 제조방법
KR20120032735A (ko) * 2010-09-29 2012-04-06 삼성모바일디스플레이주식회사 터치 스크린 패널 및 그 제조방법
KR20140008607A (ko) * 2012-07-09 2014-01-22 한국기계연구원 희생 기판을 이용한 금속 배선이 함입된 유연 기판 제조 방법 및 이에 의해 제조된 금속 배선이 함입된 유연 기판

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11225555B2 (en) 2015-05-12 2022-01-18 Basf Se Caprolactam formulations
CN110168357A (zh) * 2017-01-11 2019-08-23 Lg电子株式会社 传感器
CN110275649A (zh) * 2018-03-16 2019-09-24 东友精细化工有限公司 高分辨率触摸传感器

Similar Documents

Publication Publication Date Title
WO2016080738A1 (fr) Capteur tactile sous forme de film et son procédé de fabrication
US10261642B2 (en) Film touch sensor with an inorganic passivation layer
WO2015076505A1 (fr) Électrode de détection tactile intégrée à une plaque de polarisation composite et panneau d'écran tactile la comportant.
KR101586739B1 (ko) 필름 터치 센서 및 그의 제조 방법
KR101586736B1 (ko) 필름 터치 센서 및 그의 제조 방법
WO2016093557A1 (fr) Capteur tactile à film et son procédé de fabrication
WO2016178498A1 (fr) Panneau tactile
KR101586740B1 (ko) 필름 터치 센서 및 그의 제조 방법
WO2016122116A1 (fr) Capteur tactile à film et son procédé de production
WO2017188683A1 (fr) Filtre coloré intégré à un capteur tactile et procédé de fabrication associé
TWI735601B (zh) 膜觸控感測器及包括該膜觸控感測器的結構物
WO2016021862A1 (fr) Fenêtre tactile
WO2019168303A1 (fr) Numériseur intégré à un capteur tactile et dispositif d'affichage le comprenant
WO2016153192A1 (fr) Procédé et appareil de fabrication d'un capteur tactile à film
WO2017052177A1 (fr) Capteur de toucher de film et son procédé de fabrication
WO2016018030A1 (fr) Capteur tactile à pellicule et son procédé de fabrication
KR102255697B1 (ko) 필름 터치 센서 및 그의 제조 방법
WO2015122678A1 (fr) Fenêtre tactile
WO2015020336A1 (fr) Électrode de détection de toucher et panneau à écran tactile la comprenant
WO2014129852A1 (fr) Capteur de panneau tactile et son procédé de fabrication
WO2019168362A1 (fr) Numériseur et son procédé de fabrication
WO2016153184A1 (fr) Capteur tactile à film et son procédé de fabrication
WO2016093519A1 (fr) Capteur tactile à film et son procédé de fabrication
WO2015076541A1 (fr) Électrode de détection tactile hybride et panneau d'écran tactile la comportant
WO2017142188A1 (fr) Capteur tactile pliable et son procédé de fabrication

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15828222

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15828222

Country of ref document: EP

Kind code of ref document: A1