WO2018190072A1 - Dispositif électroluminescent - Google Patents

Dispositif électroluminescent Download PDF

Info

Publication number
WO2018190072A1
WO2018190072A1 PCT/JP2018/010354 JP2018010354W WO2018190072A1 WO 2018190072 A1 WO2018190072 A1 WO 2018190072A1 JP 2018010354 W JP2018010354 W JP 2018010354W WO 2018190072 A1 WO2018190072 A1 WO 2018190072A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
led element
light
element array
emitting device
Prior art date
Application number
PCT/JP2018/010354
Other languages
English (en)
Japanese (ja)
Inventor
智一 名田
Original Assignee
Ｚｉｇｅｎライティングソリューション株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2018043662A external-priority patent/JP6481245B2/ja
Application filed by Ｚｉｇｅｎライティングソリューション株式会社 filed Critical Ｚｉｇｅｎライティングソリューション株式会社
Priority to CN201880024801.8A priority Critical patent/CN110521009A/zh
Publication of WO2018190072A1 publication Critical patent/WO2018190072A1/fr
Priority to US16/600,493 priority patent/US20200053852A1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages

Definitions

  • the present invention relates to a light-emitting device and a lighting device, and more particularly to a light-emitting device and a lighting device in which LEDs are used and the emission color changes according to an input current.
  • a light emitting device using a light emitting diode (LED) with respect to a conventional light source has a very high luminous efficiency because it directly converts applied power into light, and has been used in many lighting devices in recent years.
  • LED light emitting diode
  • the incandescent bulb and the halogen lamp have a single light source, and even in a light-emitting device using an LED, a single light source that changes the emission color is desired.
  • a light emitting device using an LED is generally characterized by exhibiting a substantially constant emission color with respect to input power. Therefore, in order to adjust the emission color in a light emitting device using LEDs, it is usually necessary to drive LEDs that emit different emission colors with independent circuits, and for circuits having LEDs with different emission colors by using a processor or the like. There is generally known a method of individually controlling current values to obtain a desired light emission color as a whole light emitting device.
  • the method of driving LEDs that emit different emission colors with independent circuits requires an input signal to the processor, and the current values of multiple circuits must be controlled according to the desired emission color, There is a disadvantage that the lighting system becomes complicated and the cost is high, such as the need to detect the desired emission color and perform feedback control. Furthermore, in order to constitute an independent circuit, it is generally constituted by two or more light emitting sources.
  • Patent Document 1 Japanese Unexamined Patent Application Publication No. 2015-201614 (Patent Document 1), the emission color is changed only by adjusting the magnitude of the input current to the light emitting device, and the same color as the halogen lamp.
  • COB chip-on-board
  • a light emitting region is formed for each LED element array having a different threshold voltage in a single light emitting unit, and a resistor is connected in series to the LED element array having a low threshold voltage.
  • a change in the emission color according to the magnitude of the current is realized. For example, if the color temperature emitted from the light emitting region having the LED element array having a low threshold voltage is 2000K, and the color temperature emitted from the light emitting region having the LED element array having the high threshold voltage is 3000K, the light emitting device responds to the light control.
  • a preferable emission color change is generated like the color change of the conventional incandescent bulb.
  • the fact that the threshold voltage difference between the LED element arrays is required to change the emission color means that a drive voltage difference between the low current region and the rated current region occurs, and therefore it corresponds to a wide output voltage range.
  • the power supply available on the market is limited, or the cost of the corresponding power supply is increased, and the drive voltage of the light emitting device is further increased in the lower output region. Therefore, the continuous output decrease of the variable current power supply cannot be dealt with, and the light is turned off.
  • the present invention has been made in view of the above problems, and in the light emitting device in which the emission color changes depending on the magnitude of the input current, the drive voltage can be set in a wider range, and the area of the light emitting unit can be further increased.
  • An object of the present invention is to provide a light emitting device that can be made small and has a small voltage difference between a low current region and a rated current region.
  • the light-emitting device of the present invention includes a first LED element array and a second LED element array, each of which includes one or more LED elements, and the first LED element array and the second LED.
  • the element array is connected in series, the at least one LED element array is connected in parallel with a bypass circuit having a resistor and a diode, and the threshold voltage of the LED element array connected in parallel with the bypass circuit is the threshold voltage of the diode
  • the emission color of light emitted from the first LED element array is different from the emission color of light emitted from the second LED element array.
  • the first LED element array, the second LED element array, and the bypass circuit are formed on a single substrate.
  • the difference in color temperature between the light emission color due to the light emission of the first LED element array and the light emission color due to the light emission of the second LED element array is 1000 K or more.
  • the diode is a Zener diode.
  • the light emitting region where each LED element array emits light is formed so as to have two or more symmetry axes passing through the light emission center in a top view.
  • the threshold voltage is a voltage at which the current starts to rapidly increase when a forward voltage is applied to a diode such as an LED.
  • the threshold voltage of the LED element array is the threshold voltage of the LED elements arranged in series. Total. In general, an LED element starts to emit light when a current starts to exceed a threshold voltage.
  • the threshold voltage of the diode of the bypass circuit is the sum of the threshold voltages when a plurality of diodes are connected in series. The breakdown voltage of the Zener diode connected in the reverse direction also contributes to the threshold voltage of the bypass circuit as a voltage at which the current rapidly increases.
  • the driving voltage can be set in a wider range, and the area of the light-emitting unit can be further reduced.
  • FIG. 6 is a wiring diagram of a light emitting device according to a modification of the first embodiment of the present invention. It is a wiring diagram of a light emitting device according to the prior art.
  • FIG. 5 is a plan view of FIG. 4. It is a wiring diagram of the light-emitting device which concerns on Embodiment 2 of this invention.
  • FIG. 7 is a plan view of FIG. 6. It is a wiring diagram of the light emitting device according to Embodiment 3 of the present invention. It is a top view of FIG. It is a wiring diagram of the light-emitting device which concerns on Embodiment 4 of this invention.
  • FIG. It is a top view of FIG. It is AA sectional drawing of the light-emitting device of FIG. It is a wiring diagram of the light-emitting device which concerns on Embodiment 5 of this invention. It is a wiring diagram of the light-emitting device which concerns on the modification of Embodiment 5 of this invention. It is a graph showing the relationship between the relative luminous flux of the light which the light-emitting device of this invention emits, and the color temperature of emitted light color. It is a graph showing the relationship between an input electric current and the drive voltage of the light-emitting device by this invention and a prior art.
  • the light emitting device 100 is a COB type, a single light emitting unit 2 is formed on the substrate 1, and the LED elements L 1 a to L 1 d are electrically connected to the inside of the light emitting unit 2.
  • a bypass circuit 8 including a resistor 6, a Zener diode 7, and a wiring 52 is connected in parallel to the LED element array L1.
  • the light emitting unit 2 has a resin dam 3 on the outer periphery, and includes a light emitting region 21 and an LED element array L2 including an LED element array L1 covered with a translucent resin.
  • the light emitting region 22 includes the light emitting region 22 and the light emitting region 21 and the light emitting region 22 emit different light emission colors. The presence of the light emitting regions 21 and 22 in the light emitting unit 2 makes it possible to change the emission color as a single light source.
  • the single light source means that a lighting fixture as a single light source can be designed, and the light emitting areas 21 and 22 of the light emitting unit 2 do not necessarily have to be in contact with each other. Further, the light emitting region 21 may be formed so as to surround the light emitting region 22. Further, as shown in the modified example of FIG. 3, the LED element arrays L1 and L2 are connected in a straight line, and the light emitting regions 21 and 22 are formed with respect to the respective LED element arrays as described above. May be linear like a rectangle or a filament.
  • the breakdown voltage of the Zener diode 7 of the bypass circuit 8 is lower than the threshold voltage of the LED element array L1 connected in parallel with the bypass circuit 8, and when the light emitting device 100 is driven in a low current region, the input current is the LED element array. Instead of flowing to L1, it flows to the LED element array L2 through the bypass circuit 8. For this reason, in the low current region, only the light emitting region 22 emits light in the light emitting unit 2, and the light emitting device 100 emits the light emission color of the light emitting region 22.
  • the drive voltage of the bypass circuit 8 increases due to the resistance of the bypass circuit 8, and when the threshold voltage of the LED element array L1 is exceeded, current starts to flow through the LED element array L1, and the light emitting region 22 At the same time, the light emitting area 21 also emits light.
  • the ratio of the current flowing through the LED element array L1 with respect to the bypass circuit 8 is increased, so that the light emission color of the light emitting device 100 is closer to the light emission color of the light emitting region 21.
  • the light emission color of the light emitting region 21 due to the light emission of the LED element array L1 and the light emission color of the light emission region 22 due to the light emission of the LED element array L2 are preferably white light, and the color temperature of the light emission color is 1000K. By being different from the above, it is possible to realize a light emitting device that clearly changes the color temperature. More preferably, the light emission color of the light emitting region 22 is lower than the light emission color of the light emitting region 21, so that the light emission color from the light emitting device can be changed to warmer light by decreasing the current. .
  • the light emitting device 100 emits light with the light emission color of the light emission region 22 in the low current region and light emission in the rated current region. Since light is emitted by the mixed colors of the regions 21 and 22 and approaches the color temperature of 3000K, a light-emitting device that changes color like a conventional incandescent bulb according to dimming can be realized.
  • the light emission color of the light emitting region 21 is as high as 4000 K or higher in color temperature in order for the light emission color of the light emitting device to reach a color temperature of 3000 K in the rated current region. It is preferable to use a color temperature.
  • the color temperature of the emission color is different by 2000K or more, it is possible to obtain high-quality light having high color reproducibility due to overlapping of different spectra of each emission color.
  • the substrate 1 is preferably made of a material having high light reflectivity and heat dissipation, and a ceramic substrate, an aluminum substrate, or the like is used in order to effectively use light from the LED element as light output from the light emitting device.
  • the substrate 1 is flat on both the upper and lower surfaces in order to increase the production efficiency of wiring formation, LED element and component mounting, etc., and to maximize the contact area to the metal part on which the COB is mounted to ensure the heat dissipation of the COB. It is preferable.
  • the electrode lands 41 and 42 and the wirings 51 and 52 are formed as a pattern on the substrate 1 by screen printing or the like.
  • a part of wiring 51 and 52 may be a metal wire, and is used for connection between LED elements and a wiring pattern.
  • the LED element is not provided with a wiring pattern on the substrate 1 and is wired with a metal wire, whereby the high reflectance of the substrate on the LED element mounting surface can be utilized to increase the light output of the light emitting device.
  • the LED element is appropriately selected from InGaN-based, GaAlAs-based, GaP-based and the like according to a desired emission color.
  • the LED element is an InGaN-based LED element having a peak emission wavelength in the blue region (region having a wavelength of 430 nm or more and 480 nm or less) or purple region (region having a wavelength of 385 nm or more and 430 nm or less).
  • some or all of the light is converted into other visible light colors by the phosphor and emits white light.
  • an InGaN-based blue LED element is preferably used for reasons such as luminous efficiency, availability, and acquisition cost.
  • the LED element arrays L1 and L2 may be formed of different types of LED elements.
  • the LED element array L1 is a blue LED element such as an InGaN system
  • the LED element array L2 is a red color such as a GaAlAs system. You may be comprised by the LED element.
  • different types of LED elements may be included in the LED element arrays L1 and L2.
  • the LED element array L1 is different from a combination of a blue LED element such as an InGaN system and a red LED element such as a GaAlAs system. You may be comprised by the combination of the wavelength InGaN-type LED element.
  • the LED element has an anode electrode pad and a cathode electrode pad, and is electrically connected to another LED element and a wiring pattern on the substrate via a metal wire.
  • the LED element may have an electrode on the back surface and be electrically connected to the wiring pattern on the substrate.
  • the LED element arrays L1 and L2 connected in series may be either the cathode side or the anode side of the light emitting device 100. Further, each of the LED element arrays L1 and L2 may have a configuration in which a plurality of LED element arrays are connected in parallel, and can correspond to an increase in current of the light emitting device 100.
  • the current value at which the LED element array L1 starts to emit light in the light emitting device 100 may be adjusted by connecting another electronic component such as a diode on the LED element array L1 and adjusting the current-voltage characteristics.
  • the threshold voltage of the LED element array is a value obtained by combining the threshold voltage of the LED elements and the threshold voltage of the other components.
  • the resin dam 3 is a resin for damming the translucent resin inside the light emitting section 2 and is preferably made of a material that hardly absorbs light such as transparent or white.
  • the LED element is covered with a translucent resin, and the translucent resin selectively contains a phosphor according to a desired emission color.
  • the translucent resin is not limited as long as it is a translucent resin.
  • a silicone resin having heat resistance is preferable.
  • the translucent resin may be used for a resin having different thixotropy for each light emitting region.
  • a part of the primary light emitted from the LED element is converted into light having a spectral component in visible light by the phosphor.
  • part of the light from the blue LED element is converted into light having a spectral component from green to red by the phosphor, and the phosphors in the respective light emitting regions 21 and 22 have the desired light characteristics. It is preferable that a mixing ratio is set.
  • the light-transmitting resin may not contain the phosphor.
  • the entire light emitting region in the light emitting unit 2 is uniformly transparent. Even when covered with the light-sensitive resin, the light emission color of the light emitting section 2 can be different between the case where the LED element array L1 emits light and the case where the LED element array L2 emits light. That is, the light emitting regions 21 and 22 in the light emitting unit 2 do not necessarily have to be distinguished on the appearance.
  • a part of the LED element array may be covered with a translucent resin containing the same phosphor as the other LED element arrays.
  • the light emitting regions 21 and 22 may have a plurality of sub light emitting regions having different emission colors, for example, the light emitting region 21 may be composed of a plurality of sub light emitting regions having different phosphor mixing ratios. . Further, the sub light emitting regions do not have to be in contact with each other.
  • Zener diode 7 Since the Zener diode 7 maintains the voltage at a certain value even in a low current region due to the breakdown voltage characteristic, the voltage of the light emitting device 100 can be maintained at a certain value or more even in the low current region. .
  • Zener diode 7 is a generic term for diodes having a function of maintaining a voltage at a certain value, and includes a diode called a transient voltage suppressor (TVS) diode.
  • TVS transient voltage suppressor
  • a general diode such as a rectifier diode may be further added in series in the bypass circuit 8 in the forward direction and connected.
  • a light emitting diode When a light emitting diode is used, the influence on the light emission color of the light emitting device must be considered.
  • the Zener diode 7 By using a Zener diode having a positive voltage temperature characteristic and a breakdown voltage characteristic higher than 5.1 V, the voltage of the Zener diode 7 increases due to the temperature rise of the entire light emitting device in the rated current region, and the bypass circuit 8 is By suppressing an increase in the passing current, the light emission efficiency of the light emitting device 100 can be increased. Therefore, it is preferable that the Zener diode 7 is mounted on the same substrate as the LED element and the resistor 6 and is thermally connected.
  • the zener diode 7 may be mounted in the resin forming the light emitting unit 2, and the mounting unit is not required outside the light emitting unit 2, thereby enabling the substrate 1 to be miniaturized. If the Zener diode 7 has an unpackaged element shape, it can be easily mounted in the light emitting unit 2 by die bonding or a metal wire on the wiring pattern.
  • the resistor 6 is a resistor component or a printing resistor.
  • an electrical component having another resistance such as an inductor, thermistor, or diode may be used, or two or more components may be used in combination.
  • the resistance value of the thermistor is increased by the temperature rise of the entire light emitting device in the rated current region, and the current passing through the bypass circuit 8 is suppressed to emit light. It becomes possible to increase the luminous efficiency of the entire apparatus.
  • the thermistor preferably has a temperature characteristic in which the resistance value increases rapidly at a temperature higher than normal temperature and lower than the actual operating temperature at the rated current.
  • the resistance value of the resistor 6 affects the current for starting light emission in the light emitting region 21 and the color change characteristics of the light emitting device 100, it needs to be accurate, and preferably has an error accuracy of 20% or less, for example.
  • a printing resistor printed on the substrate is preferable because the resistance value can be accurately adjusted by laser trimming or the like. Furthermore, it is preferable that a terminal capable of measuring the resistance value of the resistor 6 is provided on the substrate 1.
  • the resistor 6 may be mounted in the resin forming the light emitting unit 2 similarly to the Zener diode 7, and the mounting unit is not required outside the light emitting unit 2, so that the substrate 1 can be miniaturized.
  • the bypass circuit 8 is preferably formed on the same substrate on which the LED element array L1 is mounted.
  • a plurality of LED element arrays each having a bypass circuit may be connected in series within the light emitting unit 2, and each LED element array has a different emission color, light emission behavior with respect to current, etc. It is possible to finely control the change of.
  • all the LED element arrays in the light emitting unit 2 may be connected in parallel with different bypass circuits.
  • FIG. 4 is a wiring diagram of the light emitting device 200 according to the prior art disclosed in Patent Document 1.
  • 6 series LED element arrays L3 and 4 series are provided.
  • LED element array L4 is connected in parallel between electrode lands 241 and 242 by wires 251 and 252 respectively.
  • a resistor 206 is connected to the LED element array L4, and the magnitude of the current shunted to the wirings 251 and 252 changes as the drive voltage of the circuit of the wiring 252 varies depending on the current value.
  • the light emission colors of the light emitting regions 221 and 222 in which the LED element arrays L3 and L4 in the light emitting unit 202 are respectively arranged are different, and the light emission color of the light emitting unit 202 as a whole changes depending on the magnitude of the input current of the light emitting device 200.
  • the light emitting device 200 requires 10 more LED elements as compared with the light emitting device 200 that can be realized with a minimum of 6 LED elements. That is, according to the present invention, the number of parts of the LED element can be reduced, and the light emitting surface can be further reduced.
  • the drive voltage in the low current region is the drive voltage in which the current also flows in the 6-series LED element array L3 in the rated current region. Compared with the LED element 2 in series, it becomes lower.
  • one LED element is added in series to the LED element array L4, and the resistance value of the resistor 206 is decreased. In this case, the current flowing through the LED element array L4 is larger in the rated current region, and the current flowing through the LED element array L3 is smaller. Therefore, the emission color of the entire light emitting unit 202 is sufficiently changed. It becomes difficult.
  • a single light emitting unit 302 is formed on a substrate 301, an array L5 composed of LED elements L5a to L5c, and LED elements L6a to L6c inside the light emitting unit 302.
  • the LED element arrays L5 and L6 are connected in parallel by the wiring 351 between the electrode lands 341 and 342.
  • the LED elements L5a and L6a are connected in parallel to a bypass circuit 308a including a resistor 306a and a Zener diode 307a on the wiring 352a, and the LED elements L5c and L6c are also connected in parallel to the bypass circuit 308c.
  • the Zener diodes 307a and 307c of the bypass circuit do not require a high voltage, and general diodes are connected in the forward direction. May be used.
  • the light emitting unit 302 has a resin dam 303 on the outer periphery, and includes light emitting regions 321 including LED elements L5a and L6a, L5b and L6b, and L5c and L6c, respectively, covered with a translucent resin. 322, 323, and each light emitting region emits a specific light emission color.
  • the number of LED element arrays may be appropriately changed according to the rated current value of the light emitting device 300. For example, if the rated current of the light emitting device is small, 1 It is possible to optimize the design according to the current value, such as one LED element array, or, for example, if the rated current is large, the LED element array is three or more parallel.
  • the light emitting areas 321 and 323 exhibit the same light emission change with respect to the current. More preferably, the light-emitting regions 321 and 323 are formed symmetrically in the light-emitting portion 302, and are light-emitting color patterns that are line-symmetric with respect to two symmetry axes that pass through the light emission center in a top view. It becomes easier to suppress the color unevenness of the light emitted from 300 by an optical component or the like.
  • a light emitting region by at least three parallel LED element arrays is required in the light emitting unit. Since each adjacent light emitting region has a different light emission color, a light emitting region wider than the width of the LED element array is required for each LED element array. For this reason, as shown in FIG. 6, in the case of the light emitting portion area in which the LED element arrays can be arranged only in two parallels, it is difficult to realize with the conventional technology.
  • a single light-emitting portion 402 is formed on a substrate 401, LED element arrays L7, L8, L9, and L10 are arranged inside the light-emitting portion 402, and LED elements
  • the arrays L7 and L10 are connected in parallel with the same number of LED elements in series
  • the LED element arrays L8 and L9 are connected in parallel with the same number of LED elements in series
  • the LED element arrays L7 and L10 and the LED element array L8, L9 is electrically connected in series between the electrode lands 441 and 442.
  • a bypass circuit 408 including a resistor 406 and a Zener diode 407 is connected in parallel to the LED element arrays L7 and L10.
  • the light emitting unit 402 has a resin dam 403 on the outer periphery, and a light emitting region 421 including an LED element array L7 covered with a translucent resin, and light emitting including LED element arrays L8 and L9.
  • a region 422 and a light emitting region 423 including the LED element array L10 are formed, and each light emitting region emits a specific light emission color.
  • the light emitting regions 421 and 423 are formed symmetrically with respect to the light emission center in the light emitting unit 402 and emit the same light emission color so that the light emission color pattern in the top view is about two symmetry axes passing through the light emission center. It becomes line symmetric, and it becomes easier to suppress the color unevenness of the emitted light from the light emitting device 400 by an optical component or the like.
  • the light emitting regions 421 and 423 share the bypass circuit 408, so that each of the light emitting regions 421 and 423 can easily exhibit the same light emission change with respect to the current.
  • the drive voltage of the light emitting device 400 can be increased by increasing the number of LED elements in series in each LED element array.
  • the light emitting device 500 has a mounting portion 512 inside a surface mount type package 511, LED elements L ⁇ b> 11 a and L ⁇ b> 11 b are arranged in the mounting portion 512, a wiring 552, a resistor 506, and a diode 517. Forms a bypass circuit 508 for the LED element L11a.
  • any one of the LED element L11a, the diode 517, and the resistor 506 may be mounted on top of each other to reduce the required mounting area.
  • the wirings 551 and 552 are formed by a wiring pattern on the mounting surface or a metal wire.
  • the metal wire is preferably used.
  • the diode 517 on the bypass circuit 508 may be a Zener diode whose breakdown voltage is lower than the threshold voltage of the LED element L11a.
  • the LED elements L11a and L11b may be LED element arrays configured by connecting a plurality of LED elements in series. Alternatively, a plurality of LED elements may be connected in parallel.
  • the surface mount type package 511 is made of resin or ceramic as a material, has an electrode terminal on the back surface, and is connected to wiring electrode lands 513 and 514 provided in the mounting portion by a metal frame or a metal through hole. Yes.
  • the mounting portion is covered with a light-transmitting resin to form a light emitting portion 502, and the light emitting portion 502 is composed of light emitting regions 521 and 522 that emit different emission colors.
  • Light emission from the package 511 becomes a mixed color from the light emitting regions 521 and 522.
  • the LED elements L11a and L11b having different emission colors are used, it is possible to obtain the light emitting device 500 that emits different emission colors depending on the magnitude of the input current even by sealing with the same translucent resin. In that case, the entire light emitting unit 502 may be sealed with a translucent resin containing the same phosphor.
  • the light emitting device 500 that emits different light emission colors depending on the magnitude of the input current can be obtained by covering each LED element with a translucent resin having a different phosphor composition. .
  • a range-limited resin sealing in the mounting portion 512 is performed.
  • one LED element L11b is attached to the resin sealing surface of the package by using a translucent resin 523 in which the phosphor composition is adjusted so that the emission color has a low color temperature.
  • the whole may be sealed using a translucent resin 524 in which the phosphor composition is adjusted so that a light emission color with a high color temperature is obtained.
  • LED packages P1a to P1d and P2a to P2e are mounted on the substrate 601 having electrode lands 641 and 642 and a wiring pattern, electrically connected in series. LED package arrays P1 and P2 are formed.
  • a bypass circuit 608 including a resistor 600 and a Zener diode 607 is connected in parallel to the LED package array P1. By connecting a plurality of LED packages, the internal LED elements are also connected, and each LED package array is electrically an LED element array.
  • the LED packages P1a to P1d and P2a to P2e are mounted on a single substrate, and are preferably arranged at a distance close to each other, thereby forming a single light emitting source.
  • the LED package is preferably a small and high output surface mount type or chip scale package that can easily form a single light emitting source.
  • the LED package array P1 and the LED package array P2 emit different emission colors, respectively, and by appropriately selecting the resistor 606 and the Zener diode 607 of the bypass circuit 608 as in the previous embodiment, the magnitude of the current can be obtained.
  • the light emission color of the light emitting device 600 can be changed.
  • the LED packages belonging to the same LED package arrangement are composed of LED packages having the same light emission color, and it becomes easy to obtain a desired light emission color.
  • the LED packages belonging to different LED package arrangements are adjacent to each other, and the light emission color patterns are arranged symmetrically from the light emission center, thereby improving the color mixing property as a single light source. ,preferable.
  • Example 1 a test was performed using a light emitting device having the same configuration as that of Embodiment 1.
  • the substrate 1 is made of alumina ceramic, the resistance 6 is 33 ⁇ , and the breakdown voltage of the Zener diode 7 is 7.5V.
  • the LED element is an InGaN-based element that emits blue light.
  • the LED element array is a four-element series L1 and a two-element series L2, which are connected in series.
  • the four-element series LED element array L1 is connected to the bypass circuit 8. Connect in parallel.
  • the threshold voltage of the 4-element series LED element array L1 is about 10.4V.
  • Each LED element array is sealed with a silicone resin containing a phosphor, and the 4-element series emits white light having a color temperature of 4000K, and the 2-element series emits light bulb color light having a color temperature of 2800K.
  • the forward current was 30 mA
  • the emission color emitted by the light emitting device was 2800K
  • the forward voltage was 13.9V
  • the emission color emitted by the light emitting device was 3500 K
  • the forward voltage was 17.7 V.
  • FIG. 15 is a graph showing a change in the color temperature of the emitted color with respect to the relative luminous flux of the light emitting device. It can be seen that when the relative luminous flux decreases, the color temperature of the emitted color decreases.
  • FIG. 16 is a graph showing changes in voltage with respect to forward current.
  • the LED element having the same configuration as the light emitting device 200 according to the prior art is a blue light emitting InGaN-based element, and the LED element arrangement is 6 element series L3 and 4 element series L4, which are connected in parallel.
  • the resistance 206 connected to the LED element array L4 is 50 ⁇ , and the change in the voltage of the light emitting device is also indicated by a broken line.
  • the voltage drop is suppressed particularly in the low voltage region, and the voltage difference between the low current region and the rated current region is smaller.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

Selon la présente invention, un dispositif électroluminescent comprend un premier réseau d'éléments de DEL et un second réseau d'éléments de DEL, chacun d'eux étant composé d'un ou plusieurs éléments de DEL; le premier réseau d'éléments de DEL et le second réseau d'éléments de DEL sont connectés en série les uns aux autres; au moins un réseau d'éléments de DEL est connecté en parallèle avec un circuit de dérivation qui comprend une résistance et une diode; la tension de seuil du réseau d'éléments de DEL connectés en parallèle avec le circuit de dérivation est supérieure à la tension de seuil de la diode; et la couleur d'émission de la lumière émise par le premier réseau d'éléments de DEL est différente de la couleur d'émission de la lumière émise par le second réseau d'éléments de DEL.
PCT/JP2018/010354 2017-04-12 2018-03-15 Dispositif électroluminescent WO2018190072A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201880024801.8A CN110521009A (zh) 2017-04-12 2018-03-15 发光装置
US16/600,493 US20200053852A1 (en) 2017-04-12 2019-10-12 Light emitting device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2017078631 2017-04-12
JP2017-078631 2017-04-12
JP2018-043662 2018-03-09
JP2018043662A JP6481245B2 (ja) 2017-04-12 2018-03-09 発光装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US16/600,493 Continuation US20200053852A1 (en) 2017-04-12 2019-10-12 Light emitting device

Publications (1)

Publication Number Publication Date
WO2018190072A1 true WO2018190072A1 (fr) 2018-10-18

Family

ID=63792372

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2018/010354 WO2018190072A1 (fr) 2017-04-12 2018-03-15 Dispositif électroluminescent

Country Status (1)

Country Link
WO (1) WO2018190072A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114207345A (zh) * 2019-07-30 2022-03-18 昕诺飞控股有限公司 颜色可控led灯丝和具有这样的灯丝的灯

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008130989A (ja) * 2006-11-24 2008-06-05 Matsushita Electric Works Ltd Ｌｅｄ点灯回路およびそれを用いる照明器具
US20110068701A1 (en) * 2009-09-24 2011-03-24 Cree Led Lighting Solutions, Inc. Solid state lighting apparatus with compensation bypass circuits and methods of operation thereof
JP2012510719A (ja) * 2008-11-30 2012-05-10 クリー インコーポレイテッド Ｌｅｄ熱管理システム及び方法
JP2012146985A (ja) * 2011-01-12 2012-08-02 Everlight Electronics Co Ltd 照明装置およびそのｌｅｄデバイス
JP2017054994A (ja) * 2015-09-10 2017-03-16 パナソニックＩｐマネジメント株式会社 発光装置、及び、照明装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008130989A (ja) * 2006-11-24 2008-06-05 Matsushita Electric Works Ltd Ｌｅｄ点灯回路およびそれを用いる照明器具
JP2012510719A (ja) * 2008-11-30 2012-05-10 クリー インコーポレイテッド Ｌｅｄ熱管理システム及び方法
US20110068701A1 (en) * 2009-09-24 2011-03-24 Cree Led Lighting Solutions, Inc. Solid state lighting apparatus with compensation bypass circuits and methods of operation thereof
JP2012146985A (ja) * 2011-01-12 2012-08-02 Everlight Electronics Co Ltd 照明装置およびそのｌｅｄデバイス
JP2017054994A (ja) * 2015-09-10 2017-03-16 パナソニックＩｐマネジメント株式会社 発光装置、及び、照明装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114207345A (zh) * 2019-07-30 2022-03-18 昕诺飞控股有限公司 颜色可控led灯丝和具有这样的灯丝的灯

Similar Documents

Publication Publication Date Title
US8669722B2 (en) Color temperature adjustment for LED lamps using switches
US8820950B2 (en) Light emitting device and illumination apparatus
US8212466B2 (en) Solid state lighting devices including light mixtures
US8258722B2 (en) Lighting device with defined spectral power distribution
US8901829B2 (en) Solid state lighting apparatus with configurable shunts
JP5654328B2 (ja) 発光装置
US20100134043A1 (en) Lighting device
JP5834257B2 (ja) 可変色発光装置及びそれを用いた照明器具
KR20120031182A (ko) 발광 장치
JP2004080046A (ja) Ｌｅｄランプおよびランプユニット
JP2012113959A (ja) 発光装置
JP2009231027A (ja) 照明装置
JP2013191685A (ja) 発光装置及びそれを用いた照明装置
JP2009260390A (ja) 可変色発光ダイオード素子
JP6481245B2 (ja) 発光装置
US9599294B2 (en) LED lighting device with mint, amber and yellow colored light-emitting diodes
WO2018190072A1 (fr) Dispositif électroluminescent
JP2006080334A (ja) Ｌｅｄ発光装置
JP2020141027A (ja) 発光装置、及び、照明装置
JP2014194858A (ja) Ｌｅｄ照明装置
JP6535840B2 (ja) 発光装置
JP2018182049A (ja) 発光装置および照明装置
KR20170112165A (ko) 색온도 가변형 미술관 및 박물관용 led 조명 장치
WO2019092899A1 (fr) Dispositif électroluminescent
CN117337368A (zh) 发光模块及照明装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18784799

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18784799

Country of ref document: EP

Kind code of ref document: A1