WO2018188150A1 - 线栅偏光片的制造方法 - Google Patents

线栅偏光片的制造方法 Download PDF

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Publication number
WO2018188150A1
WO2018188150A1 PCT/CN2017/084684 CN2017084684W WO2018188150A1 WO 2018188150 A1 WO2018188150 A1 WO 2018188150A1 CN 2017084684 W CN2017084684 W CN 2017084684W WO 2018188150 A1 WO2018188150 A1 WO 2018188150A1
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Prior art keywords
wire grid
ion solution
manufacturing
carrier substrate
metal ion
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PCT/CN2017/084684
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English (en)
French (fr)
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李冬泽
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to JP2019540599A priority Critical patent/JP6786726B2/ja
Priority to US16/349,639 priority patent/US10884170B2/en
Priority to KR1020197033228A priority patent/KR102304859B1/ko
Publication of WO2018188150A1 publication Critical patent/WO2018188150A1/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/145—Radiation by charged particles, e.g. electron beams or ion irradiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/06—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
    • C23C18/10—Deposition of aluminium only
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/48—Electroplating: Baths therefor from solutions of gold
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/54—Electroplating: Baths therefor from solutions of metals not provided for in groups C25D3/04 - C25D3/50
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3058—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B2207/00—Coding scheme for general features or characteristics of optical elements and systems of subclass G02B, but not including elements and systems which would be classified in G02B6/00 and subgroups
    • G02B2207/101—Nanooptics

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method of manufacturing a wire grid polarizer.
  • the nanowire gate polarizer can transmit the incident light perpendicular to the wire grid direction by the direction of the electric field, and reflect the light of the electric field direction parallel to the wire grid direction, by adding an anti-reflection film.
  • the ability of the nanowire grid polarizer to transmit incident light is much larger than that of the conventional polarizer, and the transmittance is over 90%, and the contrast ratio is also 10,000:1, thereby greatly improving the light transmittance of the LCD.
  • contrast which greatly meets the market demand for today's high transmittance and high contrast LCD.
  • the wire grid polarizer since the sub-wavelength line-gate polarizer can achieve excellent durability in a high-temperature or high-humidity environment, the wire grid polarizer has an incomparable advantage in areas such as outdoor where reliability is critical.
  • the nano-imprint technology is generally used to fabricate the wire grid structure.
  • the manufacturing process of the nano imprint is complicated, and the photoresist needs to be embossed, demolded, etched, and removed.
  • Photoresist, etching, etc. due to the nano-scale line width and height of the wire grid structure, the etching process is difficult, the fabricated wire grid is prone to collapse, the photoresist is liable to remain, and the etching is uneven, which seriously affects the polarization of the wire grid.
  • Performance, etc. long production cycle, complicated process, low efficiency, it is difficult to prepare large-size and high-precision templates, and industrial production is very difficult.
  • the technical problem to be solved by the present invention is to provide a method for manufacturing a wire grid polarizer, which can simplify the process of the wire grid polarizer, improve manufacturing precision, and facilitate industrial production.
  • a technical solution adopted by the present invention is to provide a method for manufacturing a wire grid polarizer, which comprises: setting pattern data, the pattern data corresponding to the wire grid structure of the wire grid polarizer, and the wire grid
  • the structure includes a plurality of spaced-apart wire grids; preparing a metal ion solution; immersing at least one surface of the carrier substrate in the metal ion solution; and emitting electrons to the carrier substrate by using the emitting device And controlling the electron beam movement according to the pattern data to deposit a metal to form a wire grid structure at a position where the electron beam passes on the carrier substrate; immersing at least one surface of the carrier substrate in the metal ion solution comprises: encapsulating the metal ion solution in two Between the block carrier substrates; the use of the emitting device to emit the electron beam to the carrier substrate comprises: arranging the diameter of the electron beam, having a diameter of 0.05 to 1 nm.
  • another technical solution adopted by the present invention is to provide a method for manufacturing a wire grid polarizer, the manufacturing method comprising: setting pattern data, and the pattern data corresponds to a wire grid structure of the wire grid polarizer;
  • the wire grid structure includes a plurality of spaced-apart wire grids; preparing a metal ion solution; immersing at least one surface of the carrier substrate in the metal ion solution; using an emission device to emit an electron beam to the carrier substrate, and controlling the electron beam motion according to the pattern data,
  • the wire grid structure is formed by depositing metal at a position where the electron beam passes on the carrier substrate.
  • the present invention corresponds to the wire grid structure of the wire grid polarizer by setting the pattern data, the wire grid structure includes a plurality of spaced-apart wire grids; An ionic solution; immersing at least one surface of the carrier substrate in the metal ion solution; emitting an electron beam to the carrier substrate by using the emitting device, and controlling the movement of the electron beam according to the pattern data to deposit a metal forming line at a position where the electron beam passes on the carrier substrate
  • the gate structure is reduced to metal after the electron beam is obtained by the electron beam, and is deposited at a position corresponding to the pattern data, so that a wire grid structure is formed on the carrier substrate, and the carrier substrate and the wire grid structure form a wire grid.
  • the polarizer, the wire grid polarizer of the invention has simple process and high manufacturing precision, and is advantageous for industrial production.
  • FIG. 1 is a schematic flow chart of a method of manufacturing a wire grid polarizer according to an embodiment of the present invention
  • FIG. 2 is a schematic view showing a process of a portion of a wire grid polarizer according to an embodiment of the present invention
  • FIG. 3 is a schematic view showing the structure of a wire grid polarizer obtained in an embodiment of the present invention.
  • FIG. 1 is a schematic flow chart of a method for manufacturing a wire grid polarizer according to an embodiment of the present invention.
  • 2 is a schematic view showing the process of a portion of a wire grid polarizer according to an embodiment of the present invention.
  • 3 is a schematic view showing the structure of a wire grid polarizer obtained in an embodiment of the present invention.
  • the method of manufacturing the wire grid polarizer includes the following steps:
  • Step S11 setting pattern data corresponding to the wire grid structure of the wire grid polarizer, and the wire grid structure includes a plurality of spaced-apart wire grids.
  • the pattern data of the wire grid structure 21 is copied to the transmitting device, and the wire grid structure 211 may include a plurality of wire grids 21 arranged in parallel and spaced apart.
  • the launching device may include an axial electron gun and a motion control device, the motion control device controls the movement of the axial electron gun according to the pattern data, and the axial electron gun is used to emit the electron beam s.
  • Step S12 preparing a metal ion solution.
  • preparing the metal ion solution 13 may include reacting the metal oxide with an acid to form a metal ion solution 13 containing metal ions.
  • the metal may be aluminum
  • the metal ion may be aluminum ion Al 3+
  • the acid may be hydrochloric acid
  • the reaction formula for preparing the aluminum ion solution may be:
  • the metal may also be palladium, and the metal ion may be a chloropalladate ion.
  • the reaction formula for preparing a palladium ion solution may be:
  • the metal ion can be a chloroaurate ion
  • the reaction formula for preparing the gold ion solution can be:
  • Step S13 immersing at least one surface of the carrier substrate in the metal ion solution.
  • the step of immersing at least one surface of the carrier substrate 11 or 12 in the metal ion solution 13 may include: providing a spacer 15 between the two carrier substrates 11 and 12; encapsulating the metal ion solution 13 in Between the two carrier substrates 11 and 12.
  • the metal ion solution 13 may be encapsulated between the two carrier substrates 11 and 12 by using a plastic frame 14 , and the spacer 15 may be a gold ball 15 , and the spacer 15 may be disposed in the plastic frame 14 or may be disposed in the plastic frame 14 .
  • the spacer 15 causes a gap between the two carrier substrates 11 and 12, and the size g of the gap determines the height of the subsequently deposited wire grid 211.
  • the spacer 15 is a gold ball 15, the height h of the wire grid is equal to the diameter of the gold ball 15.
  • the area of the carrier substrates 11 and 12 may be 550 x 550 um 2 .
  • Step S14 transmitting an electron beam to the carrier substrate by using the transmitting device, and controlling the electron beam motion according to the pattern data to deposit a metal to form a wire grid structure at a position where the electron beam passes on the carrier substrate.
  • the emission of the electron beam s to the carrier substrate by the transmitting device comprises: setting the diameter of the electron beam s, having a diameter of 0.05 to 1 nm. Specifically, it can be 0.2 nm.
  • the material of the carrier substrate 11 or 12 is a transparent material that can transmit the electron beam s.
  • the material of the carrier substrate 11 or 12 may be silicon nitride SiNx.
  • the transmitting device may be a scanning transmission electron microscopy (STEM).
  • the packaged two carrier substrates are placed in a sample chamber of a scanning projection electron microscope, and the voltage of the scanning electron microscope is selected to be 300 KV, the diameter of the electron beam s is 0.2 nm, the current is 60 to 80 pA, and the scanning electron microscope uses the concentrated electron beam.
  • s is scanned on the carrier substrate 11 to complete the deposition of the surface metal of the carrier substrate 11 in contact with the solution.
  • the field emission electron source emits electrons to form an electron beam s, which converges the electron beam s into atomic-scale beam spots by the magnetic lens and the pupil in front of the sample.
  • the electron beam spot is focused on the surface of the carrier substrate 11, a region a of the carrier substrate 11 is scanned point by point by the coil according to the pattern data.
  • the electrons in the electron beam s react with the metal ions, and the metal ions are reduced by electrons.
  • the reaction formula of the reduction deposition is: Al 3+ + 3e - ⁇ Al. Therefore, metal aluminum is deposited on the region a through which the electron beam passes on the carrier substrate 11.
  • the detector below the sample synchronously receives the scattered electrons.
  • the signal received by the detector corresponding to each scanning position is converted to a current intensity displayed on a fluorescent screen or computer display.
  • Each point on the sample corresponds to the resulting image point.
  • the width w of the wire grid 211 of the wire grid structure 21 is 30 to 100 nm. Since the diameter of the electron beam s is 0.2 nm, the electron beam s can be controlled to repeatedly scan to the width required for the wire grid 211 in accordance with the pattern data.
  • the height h of the wire grid 211 of the wire grid structure 21 is 50 to 300 nm.
  • the height can be selected according to different sizes of the spacers 15, for example, gold balls 15 of different diameters are selected, thereby obtaining the height of the different wire grids 211.
  • the present invention sets the pattern data, and the pattern data corresponds to the wire grid structure of the wire grid polarizer, and the wire grid
  • the structure comprises a plurality of spaced-apart wire grids; preparing a metal ion solution; immersing at least one surface of the carrier substrate in the metal ion solution; using an emission device to emit an electron beam to the carrier substrate, and controlling the electron beam motion according to the pattern data to
  • the metal substrate is deposited on the carrier substrate to form a wire grid structure. After the electron beam passes through the electron beam, the metal ions are reduced to metal and deposited at a position corresponding to the pattern data, so that a line is formed on the carrier substrate.
  • the gate structure, the carrier substrate and the wire grid structure constitute a wire grid polarizer, and the wire grid polarizer of the invention has simple process and high manufacturing precision, and is advantageous for industrial production.

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Abstract

一种线栅偏光片的制造方法，包括：设定图案数据，图案数据与线栅偏光片的线栅结构（21）对应（S11）；制备金属离子溶液（13）（S12）；将载体基板（11）的至少一个表面浸没在金属离子溶液（13）中（S13）；利用发射设备向载体基板（11）发射电子束（s），并根据图案数据控制电子束（s）运动，以在载体基板（11）上电子束（s）经过的位置沉积金属形成线栅结构（21）（S14）。

Description

线栅偏光片的制造方法 【技术领域】
本发明涉及显示技术领域，特别是涉及一种线栅偏光片的制造方法。
【背景技术】
与传统的吸收型高分子薄膜偏光板相比，纳米线栅偏光片能够透过电场方向垂直于线栅方向的入射光，而将电场方向平行于线栅方向的光反射，通过增加防反射膜等，纳米线栅偏光片透过入射光的能力远远大于传统的偏光片，透过率可达90％以上，而对比度也有10000∶1之高，从而能够大幅度提高LCD的光透过率和对比度，极大了满足如今高透过率和高对比度LCD的市场需求。另外，由于亚波长线栅偏振片可在高温或高湿度环境中实现卓越的耐久性，所以线栅偏光片在户外等信赖性要求严苛的领域具有不可比拟的优势。
目前，一般采用纳米压印技术制作线栅结构，在利用纳米压印技术制作线栅结构的工艺流程中，纳米压印的制作步骤复杂，需要经过压印出光阻、脱模、蚀刻金属、去除光阻、刻蚀等，由于线栅结构纳米级的线宽和高度，刻蚀工艺困难，制作出来的线栅容易出现塌陷，光阻容易残留，刻蚀不均等问题，严重影响线栅的偏光性能等，制作周期长，工艺复杂，效率较低，很难制备大尺寸高精度的模板，产业化生产十分困难。
【发明内容】
本发明主要解决的技术问题是提供一种线栅偏光片的制造方法，能够简化线栅偏光片的制程，提高制造精度，利于产业化生产。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种线栅偏光片的制造方法，制造方法包括：设定图案数据，图案数据与线栅偏光片的线栅结构对应，线栅结构包括多条间隔设置的线栅；制备金属离子溶液；将载体基板的至少一个表面浸没在金属离子溶液中；利用发射设备向载体基板发射电子 束，并根据图案数据控制电子束运动，以在载体基板上电子束经过的位置沉积金属形成线栅结构；将载体基板的至少一个表面浸没在金属离子溶液中包括：将金属离子溶液封装在两块载体基板之间；利用发射设备向载体基板发射电子束包括：设置电子束的直径，直径为0.05～1nm。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种线栅偏光片的制造方法，该制造方法包括：设定图案数据，图案数据与线栅偏光片的线栅结构对应，线栅结构包括多条间隔设置的线栅；制备金属离子溶液；将载体基板的至少一个表面浸没在金属离子溶液中；利用发射设备向载体基板发射电子束，并根据图案数据控制电子束运动，以在载体基板上电子束经过的位置沉积金属形成线栅结构。
本发明的有益效果是：区别于现有技术的情况，本发明通过设定图案数据，图案数据与线栅偏光片的线栅结构对应，线栅结构包括多条间隔设置的线栅；制备金属离子溶液；将载体基板的至少一个表面浸没在金属离子溶液中；利用发射设备向载体基板发射电子束，并根据图案数据控制电子束运动，以在载体基板上电子束经过的位置沉积金属形成线栅结构，在电子束经过的地方金属离子得到电子后被还原为金属，沉积在与图案数据对应的位置，如此便在载体基板上沉积形成了线栅结构，载体基板与线栅结构构成线栅偏光片，本发明的线栅偏光片制程简单且制造精度高，利于产业化生产。
【附图说明】
图1是本发明实施例的线栅偏光片的制造方法的流程示意图；
图2是本发明实施例的线栅偏光片部分制程示意图；
图3是本发明实施例制得的线栅偏光片的结构示意图。
【具体实施方式】
请参阅图1，图1是本发明实施例的线栅偏光片的制造方法的流程示意图。 图2是本发明实施例的线栅偏光片部分制程示意图。图3是本发明实施例制得的线栅偏光片的结构示意图。在本实施例中，线栅偏光片的制造方法包括以下步骤：
步骤S11：设定图案数据，图案数据与线栅偏光片的线栅结构对应，线栅结构包括多条间隔设置的线栅。
在步骤S11中，例如，将线栅结构21的图案数据拷贝至发射设备，线栅结构211可包括多条平行且间隔设置的线栅21。发射设备可包括轴向电子枪和运动控制设备，运动控制设备根据图案数据控制轴向电子枪运动，轴向电子枪用于发射电子束s。
步骤S12：制备金属离子溶液。
在步骤S12中，制备金属离子溶液13可包括：使金属氧化物与酸反应生成含有金属离子的金属离子溶液13。具体的，金属可以为铝，金属离子可以为铝离子Al3+，酸可以为盐酸，制备铝离子溶液的反应式可为：
Al2O3+6H+→2Al3++3H2O
金属还可以为钯，金属离子可以为氯钯酸根离子，制备钯离子溶液的反应式可以为：
PdCl2+2Cl-→[PdCl4]2-；
金属离子可以为氯金酸根离子，制备金离子溶液的反应式可以为：
AuCl3+Cl-→[AuCl4]-；
步骤S13：将载体基板的至少一个表面浸没在金属离子溶液中。
在步骤S13中，将载体基板11或12的至少一个表面浸没在金属离子溶液13中的步骤可以包括：在两块载体基板11和12之间设置垫隔物15；将金属离子溶液13封装在两块载体基板11和12之间。例如，可以采用胶框14将金属离子溶液13封装在两块载体基板11和12之间，垫隔物15可为金球15，垫隔物15可设置在胶框14中，也可以设置在金属离子溶液13中。垫隔物15使得两块载体基板11和12之间存在间隙，间隙的尺寸g决定了后续沉积的线栅211 的高度。例如，在垫隔物15为金球15时，线栅的高度h等于金球15的直径。载体基板11和12的面积可以为550×550um2。
步骤S14：利用发射设备向载体基板发射电子束，并根据图案数据控制电子束运动，以在载体基板上电子束经过的位置沉积金属形成线栅结构。
在步骤S14中，利用发射设备向载体基板发射电子束s包括：设置电子束s的直径，直径为0.05～1nm。具体可以为0.2nm。载体基板11或12的材质为可透过电子束s的透明材质，具体而言，载体基板11或12的材质可以为氮化硅SiNx。具体而言，发射设备可以为扫描投射电子显微镜(scanning transmission electron microscopy，STEM)。首先将封装好的两块载体基板放入扫描投射电子显微镜的样品仓，选定扫描投射电子显微镜的电压300KV，电子束s直径0.2nm，电流60～80pA，扫描投射电子显微镜利用会聚的电子束s在载体基板11上扫描来完成载体基板11与溶液接触的表面金属的沉积。在扫描模式下，场发射电子源发射出电子，形成电子束s，通过在样品前磁透镜以及光阑把电子束s会聚成原子尺度的束斑。电子束斑聚焦在载体基板11表面后，根据图案数据通过线圈控制逐点扫描载体基板11的一个区域a。电子束s中的电子与金属离子反应，金属离子得到电子被还原，以铝离子为例，还原沉积的反应式为：Al3++3e-→Al。因此，在载体基板11上电子束经过的区域a会沉积金属铝。
在每扫描一点的同时，样品下面的探测器同步接收被散射的电子。对应于每个扫描位置的探测器接收到的信号转换成电流强度显示在荧光屏或计算机显示器上。样品上的每一点与所产生的像点一一对应。
线栅结构21的线栅211的宽度w为30～100nm。由于电子束s的直径为0.2nm，可控制电子束s依据图案数据反复扫描达到线栅211所需宽度。
线栅结构21的线栅211的高度h为50～300nm。高度可以根据选择不同尺寸的垫隔物15，例如选择不同直径的金球15，从而来获得不同的线栅211的高度。
本发明通过设定图案数据，图案数据与线栅偏光片的线栅结构对应，线栅 结构包括多条间隔设置的线栅；制备金属离子溶液；将载体基板的至少一个表面浸没在金属离子溶液中；利用发射设备向载体基板发射电子束，并根据图案数据控制电子束运动，以在载体基板上电子束经过的位置沉积金属形成线栅结构，在电子束经过的地方金属离子得到电子后被还原为金属，沉积在与图案数据对应的位置，如此便在载体基板上沉积形成了线栅结构，载体基板与线栅结构构成线栅偏光片，本发明的线栅偏光片制程简单且制造精度高，利于产业化生产。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (18)

  1. 一种线栅偏光片的制造方法，其中，所述制造方法包括：
    设定图案数据，所述图案数据与所述线栅偏光片的线栅结构对应，所述线栅结构包括多条间隔设置的线栅；
    制备金属离子溶液；
    将载体基板的至少一个表面浸没在所述金属离子溶液中；
    利用所述发射设备向所述载体基板发射电子束，并根据所述图案数据控制所述电子束运动，以在所述载体基板上所述电子束经过的位置沉积金属形成所述线栅结构；
    所述将载体基板的至少一个表面浸没在所述金属离子溶液中包括：
    将所述金属离子溶液封装在两块载体基板之间；
    所述利用所述发射设备向所述载体基板发射电子束包括：
    设置所述电子束的直径，所述直径为0.05～1nm。
  2. 根据权利要求1所述的制造方法，其中，将所述金属离子溶液封装在两块载体基板之间前还包括：
    在所述两块载体基板之间设置垫隔物。
  3. 根据权利要求1所述的制造方法，其中，所述金属离子溶液为铝离子溶液，所述金属为铝。
  4. 根据权利要求1所述的制造方法，其中，所述金属离子溶液为钯离子溶液，所述金属为钯。
  5. 根据权利要求1所述的制造方法，其中，所述金属离子溶液为金离子溶液，所述金属为金。
  6. 根据权利要求1所述的制造方法，其中，所述线栅的宽度为30～100nm。
  7. 根据权利要求1所述的制造方法，其中，所述线栅的高度为50～300nm。
  8. 根据权利要求1所述的制造方法，其中，所述载体基板的材质为氮化硅。
  9. 一种线栅偏光片的制造方法，其中，所述制造方法包括：
    设定图案数据，所述图案数据与所述线栅偏光片的线栅结构对应，所述线栅结构包括多条间隔设置的线栅；
    制备金属离子溶液；
    将载体基板的至少一个表面浸没在所述金属离子溶液中；
    利用所述发射设备向所述载体基板发射电子束，并根据所述图案数据控制所述电子束运动，以在所述载体基板上所述电子束经过的位置沉积金属形成所述线栅结构。
  10. 根据权利要求9所述的制造方法，其中，所述将载体基板的至少一个表面浸没在所述金属离子溶液中包括：
    将所述金属离子溶液封装在两块载体基板之间。
  11. 根据权利要求10所述的制造方法，其中，将所述金属离子溶液封装在两块载体基板之间前还包括：
    在所述两块载体基板之间设置垫隔物。
  12. 根据权利要求9所述的制造方法，其中，所述利用所述发射设备向所述载体基板发射电子束包括：
    设置所述电子束的直径，所述直径为0.05～1nm。
  13. 根据权利要求9所述的制造方法，其中，所述金属离子溶液为铝离子溶液，所述金属为铝。
  14. 根据权利要求9所述的制造方法，其中，所述金属离子溶液为钯离子溶液，所述金属为钯。
  15. 根据权利要求9所述的制造方法，其中，所述金属离子溶液为金离子溶液，所述金属为金。
  16. 根据权利要求9所述的制造方法，其中，所述线栅的宽度为30～100nm。
  17. 根据权利要求9所述的制造方法，其中，所述线栅的高度为50～300nm。
  18. 根据权利要求9所述的制造方法，其中，所述载体基板的材质为氮化硅。
PCT/CN2017/084684 2017-04-10 2017-05-17 线栅偏光片的制造方法 Ceased WO2018188150A1 (zh)

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