WO2018184462A1 - 一种功率控制电路及功率放大电路 - Google Patents

一种功率控制电路及功率放大电路 Download PDF

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Publication number
WO2018184462A1
WO2018184462A1 PCT/CN2018/079413 CN2018079413W WO2018184462A1 WO 2018184462 A1 WO2018184462 A1 WO 2018184462A1 CN 2018079413 W CN2018079413 W CN 2018079413W WO 2018184462 A1 WO2018184462 A1 WO 2018184462A1
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Prior art keywords
current
power
power control
control circuit
voltage
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PCT/CN2018/079413
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English (en)
French (fr)
Inventor
苏强
彭振飞
徐柏鸣
奕江涛
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广州慧智微电子有限公司
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Publication of WO2018184462A1 publication Critical patent/WO2018184462A1/zh
Priority to US16/590,371 priority Critical patent/US11177772B2/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers without distortion of the input signal
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers

Definitions

  • the present invention relates to the field of electronic technologies, and in particular, to a power control circuit and a power amplifying circuit.
  • RF power amplifiers have a wide range of applications in the field of communications, such as RF power amplifiers in the world's second-generation mobile communication system (The 2nd Generation, 2G) GSM communication system.
  • the common GSM RF power amplifier and its power control circuit structure are shown in Figure 1.
  • the power amplifier U2 amplifies the signal of the RF input port and outputs it by the RF output port.
  • the output power of the RF output port is controlled by the power control circuit. That is, the voltage modulation circuit in Fig. 1 performs control.
  • the power transistor B1 in the voltage modulation circuit occupies a large chip area, and the chip area increases as the current load capacity of the power transistor B1 increases; in addition, the voltage modulation circuit The power transistor B1 generates a voltage drop and consumes power, which in turn reduces the maximum output power of the power amplifier U2 and reduces the efficiency of the power amplifier U2.
  • the voltage modulation circuit is a closed loop
  • the stability of the voltage modulation circuit is related to the bypass capacitor, the DC current of the power amplifier, the temperature, the power supply voltage VBAT, etc., and the power amplifier is easily generated due to poor stability in practical applications.
  • Low frequency oscillation in addition, when the output power control signal VRAMP controls the power of the power amplifier through the closed loop loop, it is easy to cause spurs in the spectrum of the power amplifier due to the problem of the closed loop loop itself during the transient process, and cause different powers.
  • the speed of the level of transient response is very different.
  • an embodiment of the present invention provides a power control circuit and a power amplifying circuit.
  • Embodiments of the present invention provide a power control circuit, including: a voltage current converter, a programmable current amplifier, wherein
  • the voltage current converter is configured to detect an input output power control signal, convert the output power control signal into a control current, and output the signal;
  • the programmable current amplifier is configured to receive the control current and amplify the control current as a bias current output of a power amplifier coupled to the power control circuit.
  • the power control circuit further includes a waveform shaper configured to perform a starting point offset of the control current with respect to the output power control signal.
  • the waveform shaper includes a constant current source.
  • the power control circuit further includes a temperature compensator configured to compensate the control current when the temperature changes.
  • the power control circuit further includes a voltage compensator configured to compensate the control current when the power supply voltage of the power amplifier changes.
  • the temperature compensator includes a temperature-controlled current source; and/or the voltage compensator includes a voltage-controlled current source.
  • the output current of the voltage-current converter is positively correlated with the input voltage.
  • the positive correlation relationship includes a linear relationship, a piecewise linear relationship, a square relationship or an exponential relationship.
  • the programmable current amplifier linearly amplifies the control current, and the amplification factor of the programmable current amplifier is controlled by the control signal by programming the programmable current amplifier.
  • An embodiment of the present invention provides a power amplifying circuit, including a power amplifier, and a power control circuit in the foregoing technical solution;
  • the power control circuit is coupled to the power amplifier and configured to input a bias current to the power amplifier
  • the power amplifier is configured to perform corresponding amplification processing on the input radio frequency signal according to the bias current, and then output.
  • the power control circuit and the power amplifying circuit provided by the embodiments of the present invention detect an input output power control signal through a voltage current converter, and convert the output power control signal into a control current; the control is performed by a programmable current amplifier The current is amplified as a bias current output of the power amplifier connected to the power control circuit. It can be seen that the power control circuit of the embodiment of the present invention is an open loop circuit, and the power amplifier can be controlled without a power transistor. Comparing related technologies eliminates the adverse effects of power transistors and closed loops and improves the performance of power amplifier circuits.
  • FIG. 1 is a schematic structural diagram of a circuit of a power amplifying circuit in the related art
  • FIG. 2 is a schematic structural diagram of a circuit of a power amplifying circuit according to an embodiment of the present invention
  • FIG. 3 is a schematic diagram showing an input voltage-output current relationship of a voltage-current converter according to an embodiment of the present invention
  • FIG. 4 is a schematic diagram showing relationship between output current and input voltage of a power control circuit according to an embodiment of the present invention
  • FIG. 5 is a schematic structural diagram of a circuit structure of a power control circuit according to an embodiment of the present invention.
  • FIG. 6 is a schematic diagram showing relationship between output current and output voltage of a current source used by a voltage compensator according to an embodiment of the present invention
  • FIG. 7 is a schematic diagram showing the temperature-current relationship of a current source used by a temperature compensator according to an embodiment of the present invention.
  • the power control circuit controlled by the output power control signal VRAMP controls the bias current Ibase of the power amplifier so that the bias current Ibase varies with the magnitude of the output power control signal VRAMP; thus, due to the bias current
  • the output power of the Ibase and the power amplifier is positively correlated, and the output power control signal VRAMP controls the bias current Ibase to control the output power of the power amplifier.
  • the change of the bias current Ibase with the output power control signal VRAMP includes: the bias current Ibase increases as the output power control signal VRAMP increases, and the bias current Ibase decreases when the output power control signal VRAMP decreases. small.
  • FIG. 2 is a schematic structural diagram of a circuit of a power control circuit according to an embodiment of the present invention. As shown in FIG. 2, the power control circuit is connected to a power amplifier U3 and configured to input a bias current to the power amplifier U3.
  • the power control circuit includes: a voltage current. Converter and programmable current amplifier;
  • a voltage-current converter configured to detect an input output power control signal VRAMP, convert the output power control signal VRAMP into a control current Io, and output;
  • the programmable current amplifier is configured to receive the control current Io output by the voltage-current converter, and amplify the control current Io to be output as a bias current Ibase of the power amplifier U3.
  • the power control circuit in the embodiment of the present invention does not use the voltage modulation circuit in the related art, which eliminates the chip area caused by the power transistor in the related art when the voltage modulation circuit is used, reduces the maximum output power of the power amplifier, and reduces the power.
  • the power control circuit in the embodiment of the present invention adopts an open-loop structure, and there is no stability problem. In the transient process, there is no interference of the closed-loop loop itself, and the spectral spur of the power amplifier is controlled. And the transient response speeds of different power levels are consistent.
  • the programmable current amplifier linearly amplifies the control current Io to generate a bias current Ibase of the power amplifier.
  • the amplification factor here can be controlled by the control signal.
  • the voltage current converter converts the output power control signal VRAMP into the control current Io.
  • the output current Io of the voltage current converter is positively correlated with the input voltage VRAMP.
  • the output current Io of the voltage-current converter shown in FIG. 3(a) is linear with the input voltage VRAMP; the output current Io of the voltage-current converter shown in FIG. 3(b) and the input voltage VRAMP There is a piecewise linear relationship; the output current Io of the voltage-current converter shown in Figure 3(c) is squared with the input voltage VRAMP; the output of the voltage-current converter as shown in Figure 3(d)
  • the current Io is exponential with the input voltage VRAMP.
  • the power control circuit may further include a waveform shaper configured to perform a starting point offset of the control current with respect to the output power control signal; wherein, the input of the control current Io relative to the starting point drift of the output power signal VRAMP
  • the voltage-output current diagram is as shown in FIG. 4: when the output power control signal VRAMP is less than or equal to the voltage threshold value VosX, the Io value is the set first current value IosY, wherein the voltage threshold VosX is the set second.
  • the waveform shaper offsets the starting point of the control current Io, so that the power amplifier controlled by the bias current Ibase can meet the requirements of the forward isolation, speed and the like.
  • FIG. 5 is a schematic structural diagram of a circuit of a power control circuit according to an embodiment of the present invention
  • FIG. 5 is a schematic diagram of various specific implementation structures of the power control circuit as described in FIG.
  • the power control circuit includes a voltage-current converter DAC, a voltage compensator, a temperature compensator, a waveform shaper, and a programmable current amplifier.
  • the voltage-current converter includes an error amplifier and a field effect transistor M1.
  • FETs M1 and M2 can achieve voltage-to-current conversion; the drain of FET M2 is connected to a programmable current amplifier to provide input current to the programmable current amplifier DAC; the programmable current amplifier DAC is input signal from its own control terminal The control converts the received input current to a bias current Ibase according to the ratio set by the input signal.
  • the waveform shaper includes a current source IosX and a current source IosY.
  • the current source IosX and the current source IosY are constant current sources, and respectively output constant currents of sizes IosX and IosY.
  • the current source IosY is connected between the power source VBAT and the drain of the FET M2
  • the current source IosX is connected between the power source VBAT and the drain of the FET M1.
  • the current source is IosY outputs a constant current of size IosY to the programmable current amplifier; when the output power control signal VRAMP exceeds the voltage threshold VosX, the field effect transistor M1 is turned on.
  • the power control circuit also includes a temperature compensator configured to compensate for the control current as the temperature changes.
  • the temperature compensator includes a temperature-controlled current source Itemp.
  • the temperature-controlled current source Itemp is a temperature-controlled current source that is negatively correlated with temperature. As the temperature increases, the output current of the current source Itemp becomes smaller, but the output current of the temperature-controlled current source Itemp The relationship with temperature is not limited to the linear relationship as shown in FIG. 6.
  • the use of the temperature-controlled current source Itemp causes the control current Io to increase as the temperature Temp increases, and decreases as the temperature Temp decreases, thereby allowing the power amplifier controlled by the bias current Ibase to change at the temperature Temp At the time, the bias current Ibase is compensated to keep the output power stable.
  • the power control circuit further includes a voltage compensator configured to compensate for the control current when the power supply voltage VBAT of the power amplifier changes.
  • the voltage compensator includes a voltage controlled current source Ivol.
  • the voltage-controlled current source Ivol is a voltage-controlled current source positively related to the power supply voltage VBAT, but the relationship between the output current of the voltage-controlled current source Ivol and the power supply voltage VBAT is not limited to FIG. 7 The linear relationship shown.
  • the use of the voltage-controlled current source Ivol causes the control current Io to decrease as the power supply voltage VBAT increases, and increases as the power supply voltage VBAT decreases, thereby enabling the power amplifier controlled by the bias current Ibase to be in the power supply.
  • the voltage VBAT is the collector voltage of the power amplifier, it is compensated by the bias current Ibase to keep the output power stable.
  • the current output by the temperature-controlled current source Itemp or the voltage-controlled current source Ivol changes, and the voltage across the resistor R1 changes, thereby affecting the FETs M1 and M2.
  • the voltage value of the gate which in turn affects the output current Io and the bias current Ibase, compensates for the effect of changes in temperature or supply voltage on the power amplifier, and stabilizes the output power of the power amplifier.
  • the power control circuit provided by the embodiment of the present invention detects an input output power control signal through a voltage current converter, and converts the output power control signal into a control current; and the control current is amplified by a programmable current amplifier. a bias current output of the power amplifier connected to the power control circuit; it can be seen that the power control circuit of the embodiment of the invention is an open loop circuit, and the power amplifier can be controlled without a power transistor, compared with related technologies, The adverse effects of the power transistor and the closed loop are eliminated, and the performance of the power amplifier circuit is improved.
  • Embodiments of the present invention further provide a power amplifying circuit including a power amplifier and a power control circuit; wherein the power control circuit is connected to the power amplifier and configured to input a bias current to the power amplifier; the power amplifier is configured to be biased according to the bias The current is input and the input RF signal is correspondingly amplified and output;
  • the power control circuit may adopt the composition and function of the power control circuit described in the above technical solution.
  • a power control circuit as shown in FIG. 2 may be adopted, specifically:
  • the voltage-current converter detects the input output power control signal VRAMP and converts the signal into a control current Io.
  • the programmable current amplifier converts the control current Io into a bias current Ibase input power amplifier, under the control of the bias current Ibase, the power
  • the amplifier U3 amplifies the RF output signal of the input RF input signal according to the ratio set by the bias current Ibase and outputs it.
  • the power control circuit further includes a waveform shaper including a constant current source IosY and a constant current source IosX to make the bias current Io relative to the output power.
  • the control signal VRAMP performs a starting point offset; in addition, the power control circuit further includes a voltage compensator and a temperature compensator to provide voltage compensation and temperature compensation for the power amplifier, the voltage compensator includes a voltage controlled current source Ivol, and the temperature compensator includes temperature control Current source Itemp.
  • the power amplification circuit provided by the embodiment of the present invention detects an input output power control signal by a voltage current converter, and converts the output power control signal into a control current; and the control current is amplified by a programmable current amplifier. a bias current output of the power amplifier connected to the power control circuit; it can be seen that the power control circuit of the embodiment of the invention is an open loop circuit, and the power amplifier can be controlled without a power transistor, compared with related technologies, The adverse effects of the power transistor and the closed loop are eliminated, and the performance of the power amplifier circuit is improved.
  • an input output power control signal is detected by a voltage current converter, and the output power control signal is converted into a control current; and the control current is amplified by a programmable current amplifier as The bias current output of the power amplifier connected to the power control circuit; it can be seen that the power control circuit of the embodiment of the invention is an open loop circuit, and the power amplifier can be controlled without a power transistor, and the power is eliminated compared with related technologies. The adverse effects of transistors and closed loops improve the performance of power amplifier circuits.

Abstract

本发明公开了一种功率控制电路，包括：电压电流转换器、可编程电流放大器；其中，电压电流转换器，配置为检测输入的输出功率控制信号，将所述输出功率控制信号转换为控制电流并输出；可编程电流放大器，配置为接收所述控制电流，并将所述控制电流放大后作为与所述功率控制电路连接的功率放大器的偏置电流输出。本发明还公开了一种功率放大器。

Description

一种功率控制电路及功率放大电路
相关申请的交叉引用
本申请基于申请号为201710218475.1、申请日为2017年04月05日的中国专利申请提出，并要求该中国专利申请的优先权，该中国专利申请的全部内容在此引入本申请作为参考。
技术领域
本发明涉及电子技术领域，尤其涉及一种功率控制电路及功率放大电路。
背景技术
目前，射频功率放大器在通信领域有着极为广泛的应用，如全球第二代移动通信系统(The 2nd Generation，2G)GSM通信系统中的射频功率放大器。常见的GSM射频功率放大器及其功率控制电路结构如图1所示，其中，功率放大器U2将射频输入端口的信号放大，并由射频输出端口输出；射频输出端口所输出功率的大小由功率控制电路，即图1中的电压调制电路进行控制。
如图1所示，当输入电压调制电路的误差放大器U1的输出功率控制信号VRAMP增大时，功率晶体管B1的输出电压Vout将增大，因输出电压Vout和功率放大器U2的集电极相连，功率放大器U2的集电极电压也随之增大，进而使功率放大器U2的输出功率按平方关系增大；相反，当输出功率控制信号VRAMP减小时，功率放大器的输出功率会按平方关系减小。因此，控制输出功率控制信号VRAMP的大小即可控制功率放大器的输出功率。
如图1所示的电路在实际应用中，由于电压调制电路中的功率晶体管B1占用芯片面积较大，且芯片面积随着功率晶体管B1的电流负载能力增大而增大；此外，电压调制电路的功率晶体管B1会产生电压降并且消耗功率，进而使功率放大器U2的最大输出功率降低，并使功率放大器U2的效率降低。
通常，电压调制电路为闭环环路，电压调制电路的稳定性与旁路电容、功率放大器的直流电流、温度、电源电压VBAT等相关，实际应用中很容易因稳定性不佳而使功率放大器产生低频振荡；此外，在输出功率控制信号VRAMP通过此闭环环路控制功率放大器的功率时，在瞬态过程中很容易因闭环环路本身的问题造成功率放大器的频谱产生杂散，同时造成不同功率级别的瞬态响应的速度差距很大。
发明内容
有鉴于此，本发明实施例提供一种功率控制电路及功率放大电路。
本发明实施例提供了一种功率控制电路，包括：电压电流转换器、可编程电流放大器；其中，
所述电压电流转换器，配置为检测输入的输出功率控制信号，将所述输出功率控制信号转换为控制电流并输出；
所述可编程电流放大器，配置为接收所述控制电流，并将所述控制电流放大后作为与所述功率控制电路连接的功率放大器的偏置电流输出。
上述方案中，所述功率控制电路还包括波形整形器，配置为将所述控制电流相对于所述输出功率控制信号进行起始点偏移。
上述方案中，所述波形整形器包括恒定电流源。
上述方案中，所述功率控制电路还包括温度补偿器，配置为在温度变化时对所述控制电流进行补偿。
上述方案中，所述功率控制电路还包括电压补偿器，配置为在所述功 率放大器的电源电压变化时，对所述控制电流进行补偿。
上述方案中，所述温度补偿器包括温控电流源；和/或，所述电压补偿器包括压控电流源。
上述方案中，所述电压电流转换器的输出电流与输入电压为正相关关系。
上述方案中，所述正相关关系包括线性关系、分段线性关系、平方关系或指数关系。
上述方案中，所述可编程电流放大器将所述控制电流线性放大，所述可编程电流放大器的放大倍数由控制信号通过对可编程电流放大器编程进行控制。
本发明实施例提供了一种功率放大电路，包括功率放大器、以及上述技术方案中的功率控制电路；其中，
所述功率控制电路，与所述功率放大器连接，配置为向所述功率放大器输入偏置电流；
所述功率放大器，配置为根据所述偏置电流将输入的射频信号进行相应放大处理后输出。
本发明实施例所提供的功率控制电路及功率放大电路，通过电压电流转换器检测输入的输出功率控制信号，并将所述输出功率控制信号转换为控制电流；通过可编程电流放大器将所述控制电流放大后作为与所述功率控制电路连接的功率放大器的偏置电流输出；可见，本发明实施例的功率控制电路为开环电路，且无需功率晶体管即可实现对功率放大器的控制功能，相比较相关技术，消除了功率晶体管和闭环环路带来的不良影响，改善了功率放大电路的性能。
附图说明
图1为相关技术中功率放大电路的电路组成结构示意图；
图2为本发明实施例中功率放大电路的电路组成结构示意图；
图3为本发明实施例中电压电流转换器的输入电压-输出电流关系示意图；
图4为本发明实施例中功率控制电路的输出电流-输入电压关系示意图；
图5为本发明实施例中功率控制电路的电路组成结构示意图；
图6为本发明实施例中电压补偿器使用的电流源的输出电流-输出电压关系示意图；
图7为本发明实施例中温度补偿器使用的电流源的温度-电流关系示意图。
具体实施方式
在本发明实施例中，由输出功率控制信号VRAMP控制的功率控制电路来控制功率放大器的偏置电流Ibase，以使偏置电流Ibase随输出功率控制信号VRAMP的大小变化；这样，由于偏置电流Ibase和功率放大器的输出功率为正相关关系，输出功率控制信号VRAMP控制偏置电流Ibase即可控制功率放大器的输出功率。
其中，所述偏置电流Ibase随输出功率控制信号VRAMP的大小变化包括：输出功率控制信号VRAMP增大时偏置电流Ibase随之增大，输出功率控制信号VRAMP减小时偏置电流Ibase随之减小。
为了能够更加详尽地了解本发明的特点与技术内容，下面结合附图对本发明的实现进行详细阐述，所附附图仅供参考说明之用，并非用来限定本发明。
图2为本发明实施例中功率控制电路的电路组成结构示意图，如图2所示，功率控制电路与功率放大器U3连接，配置为向功率放大器U3输入偏置电流；功率控制电路包括：电压电流转换器和可编程电流放大器；其 中，
电压电流转换器，配置为检测输入的输出功率控制信号VRAMP，将输出功率控制信号VRAMP转换为控制电流Io并输出；
可编程电流放大器，配置为接收所述电压电流转换器输出的控制电流Io，并将控制电流Io放大后作为功率放大器U3的偏置电流Ibase输出。
本发明实施例中的功率控制电路没有使用相关技术中的电压调制电路，消除了相关技术中使用电压调制电路时其中的功率晶体管带来的芯片面积过大、降低功率放大器最大输出功率、降低功率放大器效率的问题；此外，本发明实施例中的功率控制电路采用开环结构，不存在稳定性问题，在瞬态过程中不存在闭环环路本身的干扰，功率放大器的频谱杂散得到控制，且不同功率级别的瞬态响应的速度一致。
并且，可编程电流放大器对控制电流Io进行线性放大，从而产生功率放大器的偏置电流Ibase，通过对可编程电流放大器编程，这里的放大倍数可以由控制信号控制。
本发明实施例中，电压电流转换器将输出功率控制信号VRAMP转化为控制电流Io，如图3所示，电压电流转换器的输出电流Io与输入电压VRAMP之间为正相关关系。其中，如图3(a)所示的电压电流转换器的输出电流Io与输入电压VRAMP之间为线性关系；如图3(b)所示的电压电流转换器的输出电流Io与输入电压VRAMP之间为分段线性关系；如图3(c)所示的电压电流转换器的输出电流Io与输入电压VRAMP之间为平方关系；如图3(d)所示的电压电流转换器的输出电流Io与输入电压VRAMP之间为指数关系。
如图2所示，功率控制电路还可以包括波形整形器，配置为将控制电流相对于输出功率控制信号进行起始点偏移；其中，控制电流Io相对于输出功率信号VRAMP的起始点漂移的输入电压-输出电流图如图4所示：在 输出功率控制信号VRAMP小于或等于电压临界值VosX时，Io值为设定的第一电流值IosY，其中，电压临界值VosX为设定的第二电流值IosX与电阻R1的乘积；在输出功率控制信号VRAMP大于电压临界值VosX时，控制电流Io与输出功率控制信号VRAMP为正相关关系，控制电流Io随着VRAMP的增大而增大。这里，波形整形器对控制电流Io的起始点进行偏移，可使由偏置电流Ibase所控制的功率放大器满足前向隔离、速度等指标要求。
图5为本发明实施例中一种功率控制电路的电路结构示意图，图5为如图2所述的功率控制电路中的多种具体实现结构的一种。如图5所示，功率控制电路包括电压电流转换器DAC、电压补偿器、温度补偿器、波形整形器、可编程电流放大器五部分；其中，电压电流转换器包括误差放大器和场效应管M1和M2，场效应管M1和M2可以实现电压到电流的转换；场效应管M2的漏极连接可编程电流放大器，为可编程电流放大器DAC提供输入电流；可编程电流放大器DAC受自身控制端的输入信号的控制，将接收的输入电流按照输入信号设定的比例放大为偏置电流Ibase。
如图5所示，本发明实施例中波形整形器包括电流源IosX和电流源IosY，电流源IosX和电流源IosY均为恒定电流源，分别可输出大小为IosX和IosY的恒定电流。其中，电流源IosY连接在电源VBAT和场效应管M2的漏极之间，电流源IosX连接在电源VBAT和场效应管M1的漏极之间，在输出功率控制信号VRAMP较小时，由电流源IosY向可编程电流放大器输出大小为IosY的恒定电流；在输出功率控制信号VRAMP超过电压临界值VosX时，场效应管M1导通。
如图2所示，功率控制电路还包括配置为在温度变化时对控制电流进行补偿的温度补偿器。如图5所示，温度补偿器包括温控电流源Itemp。其中，如图6所示，温控电流源Itemp是与温度负相关的温控电流源，随着温 度的升高，电流源Itemp的输出电流变小，但温控电流源Itemp的输出电流大小与温度的关系并不局限于如图6中所示的线性关系。温控电流源Itemp的使用使控制电流Io随着温度Temp的增大而增大，随着温度Temp的减小而减小，进而可使由偏置电流Ibase所控制的功率放大器在温度Temp变化时，通过偏置电流Ibase进行补偿从而保持输出功率的稳定。
如图2所示，功率控制电路还包括配置为在功率放大器的电源电压VBAT变化时对控制电流进行补偿的电压补偿器。如图5所示，电压补偿器包括压控电流源Ivol。其中，如图7所示，压控电流源Ivol是与电源电压VBAT正相关的压控电流源，但压控电流源Ivol的输出电流大小与电源电压VBAT的关系并不局限于如图7中所示的线性关系。压控电流源Ivol的使用使控制电流Io随着电源电压VBAT的增大而减小，随着电源电压VBAT的减小而增大，进而可使由偏置电流Ibase所控制的功率放大器在电源电压VBAT即功率放大器的集电极电压变化时，通过偏置电流Ibase进行补偿从而保持输出功率的稳定。
如图5所示，受到温度或电源电压变化的影响时，温控电流源Itemp或压控电流源Ivol输出的电流发生变化，电阻R1两端的电压发生变化，从而影响到场效应管M1和M2的栅极的电压值，进而影响到输出电流Io和偏置电流Ibase，补偿了温度或电源电压的变化对功率放大器造成的影响，使功率放大器的输出功率得以稳定。
本发明实施例所提供的功率控制电路，通过电压电流转换器检测输入的输出功率控制信号，并将所述输出功率控制信号转换为控制电流；通过可编程电流放大器将所述控制电流放大后作为与所述功率控制电路连接的功率放大器的偏置电流输出；可见，本发明实施例的功率控制电路为开环电路，且无需功率晶体管即可实现对功率放大器的控制功能，相比较相关技术，消除了功率晶体管和闭环环路带来的不良影响，改善了功率放大电 路的性能。
本发明实施例还提供一种功率放大电路，该功率放大电路包括功率放大器以及功率控制电路；其中，功率控制电路与功率放大器连接，配置为向功率放大器输入偏置电流；功率放大器配置为根据偏置电流将输入的射频信号进行相应放大处理后输出；
这里，所述功率控制电路可采用上述技术方案中描述的功率控制电路的组成及功能，比如：可采用如图2所示的功率控制电路，具体地：
电压电流转换器检测输入的输出功率控制信号VRAMP并将该信号转换为控制电流Io，可编程电流放大器将控制电流Io转换为偏置电流Ibase输入功率放大器，在偏置电流Ibase的控制下，功率放大器U3将输入的射频输入信号按照偏置电流Ibase设定的比例放大射频输出信号并输出。
图2所示的功率控制电路的一种具体结构如图5所示，功率控制电路还包括包括恒流源IosY和恒流源IosX组成的波形整形器，以使偏置电流Io相对于输出功率控制信号VRAMP进行起始点偏移；此外，功率控制电路还包括电压补偿器和温度补偿器，以为功率放大器提供电压补偿和温度补偿，电压补偿器包括压控电流源Ivol，温度补偿器包括温控电流源Itemp。
本发明实施例所提供的功率放大电路，通过电压电流转换器检测输入的输出功率控制信号，并将所述输出功率控制信号转换为控制电流；通过可编程电流放大器将所述控制电流放大后作为与所述功率控制电路连接的功率放大器的偏置电流输出；可见，本发明实施例的功率控制电路为开环电路，且无需功率晶体管即可实现对功率放大器的控制功能，相比较相关技术，消除了功率晶体管和闭环环路带来的不良影响，改善了功率放大电路的性能。
以上所述，仅为本发明的较佳实施例而已，并非用于限定本发明的保护范围。
工业实用性
本发明实施例提供的方案，通过电压电流转换器检测输入的输出功率控制信号，并将所述输出功率控制信号转换为控制电流；通过可编程电流放大器将所述控制电流放大后作为与所述功率控制电路连接的功率放大器的偏置电流输出；可见，本发明实施例的功率控制电路为开环电路，且无需功率晶体管即可实现对功率放大器的控制功能，相比较相关技术，消除了功率晶体管和闭环环路带来的不良影响，改善了功率放大电路的性能。

Claims (10)

  1. 一种功率控制电路，包括：电压电流转换器、可编程电流放大器；其中，
    所述电压电流转换器，配置为检测输入的输出功率控制信号，将所述输出功率控制信号转换为控制电流并输出；
    所述可编程电流放大器，配置为接收所述控制电流，并将所述控制电流放大后作为与所述功率控制电路连接的功率放大器的偏置电流输出。
  2. 根据权利要求1所述的功率控制电路，其中，所述功率控制电路还包括波形整形器，配置为将所述控制电流相对于所述输出功率控制信号进行起始点偏移。
  3. 根据权利要求2所述的功率控制电路，其中，所述波形整形器包括恒定电流源。
  4. 根据权利要求1所述的功率控制电路，其中，所述功率控制电路还包括温度补偿器，配置为在温度变化时对所述控制电流进行补偿。
  5. 根据权利要求4所述的功率控制电路，其中，所述功率控制电路还包括电压补偿器，配置为在所述功率放大器的电源电压变化时，对所述控制电流进行补偿。
  6. 根据权利要求5所述的功率控制电路，其中，所述温度补偿器包括温控电流源；和/或，所述电压补偿器包括压控电流源。
  7. 根据权利要求1至6任一项所述的功率控制电路，其中，所述电压电流转换器的输出电流与输入电压为正相关关系。
  8. 根据权利要求7所述的功率控制电路，其中，所述正相关关系包括线性关系、分段线性关系、平方关系或指数关系。
  9. 根据权利要求1至6任一项所述的功率控制电路，其中，所述可编程电流放大器将所述控制电流线性放大，所述可编程电流放大器的放大倍 数由控制信号通过对可编程电流放大器编程进行控制。
  10. 一种功率放大电路，包括功率放大器、以及权利要求1至9任一项所述的功率控制电路；其中，
    所述功率控制电路，与所述功率放大器连接，配置为向所述功率放大器输入偏置电流；
    所述功率放大器，配置为根据所述偏置电流将输入的射频信号进行相应放大处理后输出。
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