US20040212433A1 - Power amplifier device and method thereof - Google Patents
Power amplifier device and method thereof Download PDFInfo
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- US20040212433A1 US20040212433A1 US10/424,251 US42425103A US2004212433A1 US 20040212433 A1 US20040212433 A1 US 20040212433A1 US 42425103 A US42425103 A US 42425103A US 2004212433 A1 US2004212433 A1 US 2004212433A1
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- power amplifier
- current
- control circuit
- slope
- radio frequency
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- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000007493 shaping process Methods 0.000 claims 2
- 238000009499 grossing Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000010295 mobile communication Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/504—Indexing scheme relating to amplifiers the supply voltage or current being continuously controlled by a controlling signal, e.g. the controlling signal of a transistor implemented as variable resistor in a supply path for, an IC-block showed amplifier
Definitions
- This invention relates to power amplifiers and, more specifically, to a device and method for controlling the bias of a power amplifier.
- Radio Frequency (RF) power amplifiers are used as components in many communication devices, including many wireless communication devices, such as base stations and mobile devices such as cell phones.
- Hetero-junction bipolar transistor (HBT) power amplifiers are a specific type of power amplifier used for cellular applications due to their high power density and reduction in die size.
- biasing these transistors with a constant current poses some difficulty.
- the voltage supply limitation typical to mobile applications combined with a relatively high Vbe of HBT devices make traditional integrated methods unusable.
- FIG. 1 shows a typical diode based biasing control of an HBT transistor.
- a power amplifier Qpa HBT 100 is biased by a diode configured transistor 110 where the base and collector are shorted together and receive a current through a resistor 120 and supply voltage V REF 130 .
- This configuration requires that a separate voltage V REF 130 (different from the battery voltage V BAT 140 supplied to the collector of the power amplifier 110 ) be applied to the diode transistor and the biased base of the power amplifier in order to tightly control the biasing current.
- V REF 130 different from the battery voltage V BAT 140 supplied to the collector of the power amplifier 110
- the power amplifier 100 is N times larger than the diode transistor 110 leading to current stealing.
- R REF 120 needs to be large to provide stability over variations in temperature and process, but needs to be small to provide enough current to properly bias the power amplifier, resulting in a circuit that would require a stable reference which supplies a prohibitively large amount of current and is not a viable circuit for power amplifiers in mobile communications applications.
- FIG. 2 Another solution, shown in FIG. 2, solves the problem of current stealing by using a current mirror with an emitter follower to bias the current supplied to the power amplifier's base.
- the base of a power amplifier transistor 200 is connected to a base of mirrored transistor 210 and the emitter of a emitter follower transistor 250 .
- the collector of the mirrored transistor 210 is connected to the base of the emitter follower transistor 250 and is connected to a reference voltage 230 through a reference resistor 220 while the collector of the emitter follower transistor 250 is connected to the battery voltage 240 which is also connected to the collector of the power amplifier transistor 200 through some impedance 270 .
- gallium arsenide (GAS) HBT power amplifiers as now used have Vbe's in the order of 1.4 volts while battery voltage supplies are required to be in the range of 2.7 volts.
- GAS gallium arsenide
- the voltage supply, V REF 230 would need to be greater than is desirable for mobile communication applications and the solution is therefore not viable.
- RF power amplifiers are placed within feedback control loops to provide for power control.
- a measurement of the output RF power delivered by the RF power amplifier vs. the input voltage will often indicate a steep slope condition where the RF power amplifier output changes very rapidly with respect to changes in the input voltage.
- an RF power amplifier presents the steep slope condition instability in the power control loop and other undesirable overall RF power amplifier breakdown conditions may result.
- FIG. 1 is a simplified electrical schematic of a prior art HBT diode based biasing circuit
- FIG. 2 is a simplified electrical schematic of another prior art HBT biasing circuit
- FIG. 3 is a simplified electrical schematic of an HBT power amplifier bias controller according to an embodiment of the invention.
- FIG. 4 is a block diagram of a power amplifier according to an embodiment of the disclosure.
- FIG. 5 is a graph illustrating a set of transfer curves
- FIGS. 6 and 7 are simplified schematics of a slope control circuits.
- HBT hetero-junction bipolar transistor
- An HBT power amplifier 300 is biased based on the voltage measured on reference HBT transistor 310 by way of a CMOS chip 355 .
- the depiction shows the reference device and power amplifier device to be an HBT transistor, other reference devices and power amplifier devices are contemplated.
- the collector of the HBT power amplifier 300 is tapped for an RF output 385 and is supplied voltage from a battery source 340 and some impedance 374 while the emitter is connected to ground.
- the base of the HBT power amplifier 300 is connected through some impedance 370 to a first input 352 of the operational amplifier 360 .
- the connection of the first input 352 is coupled to ground through a capacitor 365 .
- an RF input signal 390 is injected into the base of the HBT power amplifier 300 through some capacitor 380 .
- the output 353 of the operational amplifier is fed back and connected to the first input 352 of the operational amplifier in order to cause the operational amplifier to function as a voltage follower where the voltage appearing on a second input 351 of the operational amplifier 360 appears some minimal time later on the output 353 of the operational amplifier 360 .
- the second input 351 of the operational amplifier 360 is connected to an output of a voltage-to-current converter 368 as well as to the base through some impedance 372 and to the collector of the reference device 310 , in this case another HBT transistor.
- a control 366 of the voltage-to-current converter is connected to a voltage control signal 350 and the battery supply 340 is used to supply voltage to the voltage-to-current converter 368 through another input 367 .
- the present disclosure can use an external CMOS chip and bias control 355 , consisting of an operational amplifier 360 and a voltage-to-current converter 368 to bias the HBT power amplifier 300 .
- An analog voltage, V CONTROL 350 adjusts the reference current, I REF 330 , through the reference device 310 .
- the VBE of this reference device is measured by the operational amplifier 360 and applied to the base of the HBT power amplifier 300 .
- the HBT power amplifier's collector current I C 342 reflects the reference current I REF 330 times the ratio of the size difference between the power amplifier 300 and the reference device 310 .
- This configuration of biasing a power amplifier transistor maintains several advantages over traditional methods.
- the voltage requirements are only 1 V BE plus the overhead of the current source that typically is only a few hundred millivolts.
- current through the reference device 310 is significantly less temperature dependent due to the high output impedance of the current source compared to a resistor.
- the reference device 310 can be sourced from the normal battery source operating the power amplifier rather than having to create an independent stable reference.
- I REF is not a function of the battery voltage or of process leading to more stabilized control and linearity of the bias control.
- FIG. 4 illustrates, in block diagram form a specific embodiment of the present disclosure that illustrates a biased power amplifier module 400 , such as that illustrated in FIG. 3, and a slope control circuit 405 .
- a control voltage is applied to the biased power amplifier module 400 , at an input labeled BIAS CTL.
- the biased power amplifier 400 receives an RF INPUT signal, at an input labeled RFIN, that is amplified to produce the signal RF OUTPUT at the output labeled RFOUT.
- the slope control circuit 405 receives a sink current I from an output of the biased power amplifier module 400 labeled Slope CTL C.
- the current I affects the output of the power amplifier and bias circuit 400 such that the transfer function from the control voltage to the RF OUTPUT will be smoother, as compared with the power amplifier and bias circuit without the slope control circuit.
- V CONTROL to power output transfer function of a power amplifier device without the slope smoothing circuitry
- curve 415 represents the transfer function of a power amplifier device with the slope smoothing circuitry.
- the transform function observed with the slope smoothing circuitry is a much smoother curve and a slope of approximately one-tenth the magnitude.
- FIG. 6 illustrates a specific embodiment of a slope control circuit 405 coupled to the power amplifier of FIG. 3.
- the slope control circuit of FIG. 6 comprises resistive element 431 coupled in series with a voltage reference source 435 , labeled V SLOPE,CTL .
- V SLOPE,CTL a voltage reference source 435
- the value of V SLOPE,CTL can be zero (0) volts. In other words, only a resistor 431 is needed in one embodiment.
- FIG. 7 illustrates another specific embodiment of the slope control circuit of FIG. 6, where the voltage supply device 435 has been implemented using a transistor 445 and an amplifier 446 as the voltage supply 435 .
- the transistor 445 has a first current electrode coupled to the resistive element 431 , a second current electrode tied to a reference, such as ground, and a control electrode coupled to the first current electrode output of amplifier 446 .
- the amplifier 446 is a differential amplifier having a positive input coupled to the first electrode of the transistor 445 , and a negative electrode coupled to the voltage reference source V SLOPE,CTL .
Abstract
Description
- This invention relates to power amplifiers and, more specifically, to a device and method for controlling the bias of a power amplifier.
- Radio Frequency (RF) power amplifiers are used as components in many communication devices, including many wireless communication devices, such as base stations and mobile devices such as cell phones. Hetero-junction bipolar transistor (HBT) power amplifiers are a specific type of power amplifier used for cellular applications due to their high power density and reduction in die size. Unfortunately, biasing these transistors with a constant current poses some difficulty. The voltage supply limitation typical to mobile applications combined with a relatively high Vbe of HBT devices make traditional integrated methods unusable.
- FIG. 1 shows a typical diode based biasing control of an HBT transistor. A power amplifier Qpa HBT100 is biased by a diode configured
transistor 110 where the base and collector are shorted together and receive a current through aresistor 120 and supply voltage VREF 130. This configuration requires that a separate voltage VREF 130 (different from thebattery voltage V BAT 140 supplied to the collector of the power amplifier 110) be applied to the diode transistor and the biased base of the power amplifier in order to tightly control the biasing current. This configuration leads to several problems for power amplifier applications in mobile communications. Typically, thepower amplifier 100 is N times larger than thediode transistor 110 leading to current stealing. Additionally,R REF 120 needs to be large to provide stability over variations in temperature and process, but needs to be small to provide enough current to properly bias the power amplifier, resulting in a circuit that would require a stable reference which supplies a prohibitively large amount of current and is not a viable circuit for power amplifiers in mobile communications applications. - Another solution, shown in FIG. 2, solves the problem of current stealing by using a current mirror with an emitter follower to bias the current supplied to the power amplifier's base. The base of a
power amplifier transistor 200 is connected to a base of mirroredtransistor 210 and the emitter of aemitter follower transistor 250. The collector of the mirroredtransistor 210 is connected to the base of theemitter follower transistor 250 and is connected to areference voltage 230 through areference resistor 220 while the collector of theemitter follower transistor 250 is connected to thebattery voltage 240 which is also connected to the collector of thepower amplifier transistor 200 through someimpedance 270. However, this type of circuit is not viable because gallium arsenide (GAS) HBT power amplifiers as now used have Vbe's in the order of 1.4 volts while battery voltage supplies are required to be in the range of 2.7 volts. To control the voltage at the base of the power amplifier, the voltage supply,V REF 230, would need to be greater than is desirable for mobile communication applications and the solution is therefore not viable. - In certain applications, RF power amplifiers are placed within feedback control loops to provide for power control. A measurement of the output RF power delivered by the RF power amplifier vs. the input voltage will often indicate a steep slope condition where the RF power amplifier output changes very rapidly with respect to changes in the input voltage. When an RF power amplifier presents the steep slope condition instability in the power control loop and other undesirable overall RF power amplifier breakdown conditions may result. Thus, it would be desirable to provide an RF power amplifier device that addresses the steep slope condition while maintaining high performance operation.
- Accordingly, there is a need for an improved RF power amplifier device and method of operation.
- FIG. 1 is a simplified electrical schematic of a prior art HBT diode based biasing circuit;
- FIG. 2 is a simplified electrical schematic of another prior art HBT biasing circuit;
- FIG. 3 is a simplified electrical schematic of an HBT power amplifier bias controller according to an embodiment of the invention;
- FIG. 4 is a block diagram of a power amplifier according to an embodiment of the disclosure;
- FIG. 5, is a graph illustrating a set of transfer curves; and
- FIGS. 6 and 7 are simplified schematics of a slope control circuits.
- Referring to FIG. 3, one model of an embodiment of a bias control for a hetero-junction bipolar transistor (HBT) power amplifier is shown. Though the circuit was designed for HBT technology, it is not limited to this technology and could be used in technologies such as enhancement mode metal semiconductor field-effect transistors (MESFETS). Similar reference numerals are used throughout the figures to represent similar features when possible.
- An
HBT power amplifier 300 is biased based on the voltage measured onreference HBT transistor 310 by way of aCMOS chip 355. Although the depiction shows the reference device and power amplifier device to be an HBT transistor, other reference devices and power amplifier devices are contemplated. - The collector of the
HBT power amplifier 300 is tapped for anRF output 385 and is supplied voltage from abattery source 340 and someimpedance 374 while the emitter is connected to ground. The base of theHBT power amplifier 300 is connected through someimpedance 370 to afirst input 352 of theoperational amplifier 360. The connection of thefirst input 352 is coupled to ground through acapacitor 365. Additionally, anRF input signal 390 is injected into the base of theHBT power amplifier 300 through somecapacitor 380. Although the RF input and output signals are shown, they are not necessary to the discussion of the operation of the bias control of the power amplifier and are shown only for completeness. - The
output 353 of the operational amplifier is fed back and connected to thefirst input 352 of the operational amplifier in order to cause the operational amplifier to function as a voltage follower where the voltage appearing on asecond input 351 of theoperational amplifier 360 appears some minimal time later on theoutput 353 of theoperational amplifier 360. Thesecond input 351 of theoperational amplifier 360 is connected to an output of a voltage-to-current converter 368 as well as to the base through someimpedance 372 and to the collector of thereference device 310, in this case another HBT transistor. A control 366 of the voltage-to-current converter is connected to avoltage control signal 350 and thebattery supply 340 is used to supply voltage to the voltage-to-current converter 368 throughanother input 367. - In operation, the present disclosure can use an external CMOS chip and
bias control 355, consisting of anoperational amplifier 360 and a voltage-to-current converter 368 to bias theHBT power amplifier 300. An analog voltage,V CONTROL 350, adjusts the reference current, IREF 330, through thereference device 310. The VBE of this reference device is measured by theoperational amplifier 360 and applied to the base of theHBT power amplifier 300. The HBT power amplifier'scollector current I C 342 reflects the reference current IREF 330 times the ratio of the size difference between thepower amplifier 300 and thereference device 310. - This configuration of biasing a power amplifier transistor maintains several advantages over traditional methods. The voltage requirements are only 1 VBE plus the overhead of the current source that typically is only a few hundred millivolts. Also, current through the
reference device 310 is significantly less temperature dependent due to the high output impedance of the current source compared to a resistor. Additionally, thereference device 310 can be sourced from the normal battery source operating the power amplifier rather than having to create an independent stable reference. Other advantages are that IREF is not a function of the battery voltage or of process leading to more stabilized control and linearity of the bias control. Additionally, the control voltage Vcontrol can operate the bias as low as Vcontrol=0 volts. - FIG. 4 illustrates, in block diagram form a specific embodiment of the present disclosure that illustrates a biased
power amplifier module 400, such as that illustrated in FIG. 3, and aslope control circuit 405. - To assure appropriate resolution at their outputs and adequate stability under all conditions, power amplifiers are often specified to have a maximum power control slope. This maximum power control slope is the slope of the transfer function of output power as a function of control voltage. However, the use of power amplifiers with control voltages described herein results in a transfer curve having very steep transfer functions at specific certain control voltages. To decrease the power control slope, a slope smoothing circuit is used in the circuit of FIG. 4 to remove bias current from the
biased power amplifier 400. The amount of current that is removed is based on the voltage on the control electrode, e.g., the base-collector node ofQ REF 310. The amount of bias current that is removed is roughly proportional to the control voltage untilQ REF 310 is turned completely on. AfterQ REF 310 is turned on, the amount removed is fairly constant. This removal of bias current in this manner results in the power amplifier turning on more slowly, resulting in a smoother power control slope, i.e., a smaller maximum power control slope. This can be better understood with reference to FIGS. 3-7. - In operation, a control voltage is applied to the biased
power amplifier module 400, at an input labeled BIAS CTL. Thebiased power amplifier 400 receives an RF INPUT signal, at an input labeled RFIN, that is amplified to produce the signal RF OUTPUT at the output labeled RFOUT. Theslope control circuit 405 receives a sink current I from an output of the biasedpower amplifier module 400 labeled Slope CTL C. The current I affects the output of the power amplifier andbias circuit 400 such that the transfer function from the control voltage to the RF OUTPUT will be smoother, as compared with the power amplifier and bias circuit without the slope control circuit. For example,Curve 410 of FIG. 5 represents the VCONTROL to power output transfer function of a power amplifier device without the slope smoothing circuitry, while thecurve 415 represents the transfer function of a power amplifier device with the slope smoothing circuitry. The transform function observed with the slope smoothing circuitry is a much smoother curve and a slope of approximately one-tenth the magnitude. - FIG. 6 illustrates a specific embodiment of a
slope control circuit 405 coupled to the power amplifier of FIG. 3. The slope control circuit of FIG. 6 comprisesresistive element 431 coupled in series with avoltage reference source 435, labeled VSLOPE,CTL. By selecting the value of VSLOPE,CTL to be less than the threshold voltage, e.g. the reference voltage, of the reference device QREF 310 a portion of the current supplied by thebias circuit 355 to the conductive element coupled to the collector of QREF is provided to theresistive element 431. This results in less current being provided to the reference device QREF. In one embodiment the value of VSLOPE,CTL can be zero (0) volts. In other words, only aresistor 431 is needed in one embodiment. - FIG. 7 illustrates another specific embodiment of the slope control circuit of FIG. 6, where the
voltage supply device 435 has been implemented using atransistor 445 and anamplifier 446 as thevoltage supply 435. Specifically, thetransistor 445 has a first current electrode coupled to theresistive element 431, a second current electrode tied to a reference, such as ground, and a control electrode coupled to the first current electrode output ofamplifier 446. Theamplifier 446 is a differential amplifier having a positive input coupled to the first electrode of thetransistor 445, and a negative electrode coupled to the voltage reference source VSLOPE,CTL. - While the invention has been particularly shown and described with reference to preferred embodiments thereof, it will be understood by those skilled in the art that the foregoing and other changes in form and details may be made therein without departing from the spirit and scope of the invention. For example, the slope smoothing techniques can be used with various power amplifiers and power transistors.
Claims (24)
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US10/424,251 US6809593B1 (en) | 2003-04-28 | 2003-04-28 | Power amplifier device and method thereof |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060152287A1 (en) * | 2005-01-13 | 2006-07-13 | Xindium Technologies, Inc. | Bias compensation circuit for RF power amplifier |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US7630693B2 (en) * | 2006-11-16 | 2009-12-08 | Freescale Semiconductor, Inc. | Transmitter with improved power efficiency |
TWI332747B (en) * | 2006-12-13 | 2010-11-01 | Univ Nat Taiwan | Bias circuits and signal amplifier circuits |
JP2009296236A (en) * | 2008-06-04 | 2009-12-17 | Toshiba Corp | Bias circuit and amplifier using this |
EP3496270B1 (en) * | 2017-12-05 | 2020-11-04 | Nxp B.V. | Bias circuit |
TWI770969B (en) * | 2021-04-28 | 2022-07-11 | 立積電子股份有限公司 | Bias compensation circuit of amplifier |
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US5497125A (en) * | 1993-06-02 | 1996-03-05 | Vtech Communications, Ltd. | Current sense circuit apparatus for power amplifier control |
US6396347B1 (en) * | 2001-05-03 | 2002-05-28 | International Business Machines Corporation | Low-power, low-noise dual gain amplifier topology and method |
US6639465B2 (en) * | 2001-03-27 | 2003-10-28 | Skyworks Solutions, Inc. | Dynamic bias for a power amplifier |
-
2003
- 2003-04-28 US US10/424,251 patent/US6809593B1/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US5497125A (en) * | 1993-06-02 | 1996-03-05 | Vtech Communications, Ltd. | Current sense circuit apparatus for power amplifier control |
US6639465B2 (en) * | 2001-03-27 | 2003-10-28 | Skyworks Solutions, Inc. | Dynamic bias for a power amplifier |
US6396347B1 (en) * | 2001-05-03 | 2002-05-28 | International Business Machines Corporation | Low-power, low-noise dual gain amplifier topology and method |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US20060152287A1 (en) * | 2005-01-13 | 2006-07-13 | Xindium Technologies, Inc. | Bias compensation circuit for RF power amplifier |
US7233208B2 (en) | 2005-01-13 | 2007-06-19 | Amptech Incorporated | Bias compensation circuit for RF power amplifier |
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