WO2018179514A1 - Steroid-skeleton-containing-compound detecting device and steroid-skeleton-containing-compound detecting method using same - Google Patents

Steroid-skeleton-containing-compound detecting device and steroid-skeleton-containing-compound detecting method using same Download PDF

Info

Publication number
WO2018179514A1
WO2018179514A1 PCT/JP2017/034996 JP2017034996W WO2018179514A1 WO 2018179514 A1 WO2018179514 A1 WO 2018179514A1 JP 2017034996 W JP2017034996 W JP 2017034996W WO 2018179514 A1 WO2018179514 A1 WO 2018179514A1
Authority
WO
WIPO (PCT)
Prior art keywords
region
dimensional
nucleic acid
formation
stem
Prior art date
Application number
PCT/JP2017/034996
Other languages
French (fr)
Japanese (ja)
Inventor
金子 直人
克紀 堀井
大橋 啓之
逢坂 哲彌
Original Assignee
Necソリューションイノベータ株式会社
学校法人早稲田大学
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Necソリューションイノベータ株式会社, 学校法人早稲田大学 filed Critical Necソリューションイノベータ株式会社
Priority to JP2019508523A priority Critical patent/JP6823244B2/en
Publication of WO2018179514A1 publication Critical patent/WO2018179514A1/en

Links

Images

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Definitions

  • the present invention relates to a steroid skeleton-containing compound detection device and a steroid skeleton-containing compound detection method using the device.
  • Detecting targets is required in various fields such as clinical medicine, food, and environment.
  • a method using an interaction with the target is generally used.
  • the method using the transistor can analyze a target having a charge, there is a problem that a target having little or no charge cannot be analyzed like a steroid skeleton-containing compound containing cortisol. It was.
  • the steroid skeleton-containing compound detection device of the present invention includes a transistor in which a nucleic acid sensor for detecting a steroid skeleton-containing compound is disposed,
  • the nucleic acid sensor is A stereogenic region (D) that forms a predetermined stereostructure and a binding region (A) that binds to the steroid skeleton-containing compound;
  • the stereogenic region (D) is inhibited from forming the stereostructure
  • the three-dimensional formation region (D) forms the three-dimensional structure.
  • the steroid skeleton-containing compound is present in a solution containing an electrolyte,
  • the number of nucleotide residues constituting the nucleic acid sensor in the Debye length range of the solution is increased or decreased as compared with the inhibition of formation of the
  • the method for detecting a steroid skeleton-containing compound of the present invention comprises a contact step of bringing a sample into contact with the detection device of the present invention, and an increase or decrease in the number of nucleotide residues constituting a nucleic acid sensor in the Debye length range of the detection device. By detecting a steroid skeleton-containing compound in the sample.
  • FIG. 1 is a schematic view showing a structural change of a nucleic acid sensor in the device of the present invention.
  • FIG. 2 is a schematic diagram showing the structural change of the nucleic acid sensor in the device of the present invention.
  • FIG. 3 is a graph showing ⁇ Vg when the single-stranded sensor in Example 1 of the present application is used.
  • FIG. 4 is a graph showing ⁇ Vg when the double-stranded sensor in Example 1 of the present application is used.
  • each region is also referred to as a nucleic acid region.
  • the single-stranded nucleic acid sensor described below can also be referred to as a single-stranded sensor, for example, and the double-stranded nucleic acid sensor can also be referred to as a double-stranded sensor, for example.
  • the switch-OFF or turn-OFF
  • the formation of the predetermined structure is indicated by a switch-ON (or turn- ON).
  • the three-dimensional formation region (D) may form the predetermined three-dimensional structure by contact with a compound.
  • the other three-dimensional structure is, for example, a three-dimensional structure different from the predetermined structure.
  • specific examples of the other three-dimensional structure for example, specific examples of the predetermined structure can be used.
  • the G-quartet (also referred to as “G-tetrad”) is generally known as a surface structure in which G (guanine) is a tetramer.
  • the G formation region (G) is, for example, a region having a plurality of bases G and forming a G-quartet structure with the plurality of bases G in the region.
  • the G-quartet structure may be, for example, a parallel type or an anti-parallel type, and is preferably a parallel type.
  • the number of G-quartet structures formed in the G formation region (G) is not particularly limited, and may be one surface or a plurality of two or more surfaces.
  • G preferably forms a guanine quadruplex (or G-quadruplex) structure in which multiple G-quartets are stacked.
  • the sequence of the G-forming region (G) may be any sequence that forms the G-quartet structure, and more preferably a sequence that forms a guanine quadruplex structure.
  • sequence of the G-forming region (G) for example, a sequence of a known nucleic acid molecule that forms the G-quartet structure can be used.
  • known nucleic acid molecule include nucleic acid molecules such as the following articles (1) to (4). (1) Travascio et al., Chem. Biol., 1998, vol.5, p.505-517 (2) Cheng et al., Biochemistry, 2009, vol.48, p.7817-7823 (3) Teller et al., Anal. Chem., 2009, vol.81, p.9114-9119 (4) Tao et al., Anal. Chem., 2009, vol.81, p.2144-2149
  • the sequence of the three-dimensional formation region (D) can be, for example, the sequence of a known nucleic acid molecule that forms the pseudoknot structure.
  • the known nucleic acid molecule include nucleic acid molecules such as the following paper (6). (6) Calliste Reiling et al., “Loop Contributions to the Folding Thermodynamics of DNA Straight Hairpin Loops and Pseudoknots”, 2015, J. Phys. Chem. B, vol.119, pp.1939-1946
  • the solid formation region (D) may be, for example, a single-stranded type or a double-stranded type.
  • the single-stranded type can form a predetermined structure in, for example, a single-stranded three-dimensional formation region (D), and the double-stranded type includes, for example, a first region (D1) and a second region (D2).
  • a predetermined structure can be formed between the first region (D1) and the second region (D2).
  • the latter double-stranded type includes, for example, a structure in which the first region and the second region are indirectly linked, and will be specifically described in the nucleic acid sensor (iv) described later.
  • the length of the single-stranded solid formation region (D) is not particularly limited, and the lower limit is, for example, 11 base length, 13 base length, 15 base length, and the upper limit is, for example, 60 base length, It is 36 bases long and 18 bases long.
  • the lengths of the first region (D1) and the second region (D2) are not particularly limited, and both may be the same or different.
  • the length of the first region (D1) is not particularly limited, and the lower limit is, for example, 7 base length, 8 base length, 10 base length, and the upper limit is, for example, 30 base length, 20 base length, 10
  • the base length is, for example, 7 to 30 bases, 7 to 20 bases, or 7 to 10 bases.
  • the length of the second region (D2) is not particularly limited, and the lower limit is, for example, 7 base length, 8 base length, 10 base length, and the upper limit is, for example, 30 base length, 20 base length, 10
  • the base length is, for example, 7 to 30 bases, 7 to 20 bases, or 7 to 10 bases.
  • the steroid compound means a compound having a steroid skeleton represented by the following formula (1).
  • the steroid skeleton-containing compound includes, for example, cortisol, cholesterol, progesterone, 11-deonecicorticosterone, corticosterone, aldosterone, cortisone, dehydroepiandrosterone, dehydroepiandrosterone represented by the following formula (2): Androsterone sulfate, dihydrotestosterone, androsterone, epiandrosterone, testosterone, 17 ⁇ -estradiol, estrone, estriol and the like.
  • the length of the binding region (A) is not particularly limited, and the lower limit is, for example, 12 base length, 15 base length, 18 base length, and the upper limit is, for example, 140 base length, 80 base length, 60 bases
  • the range is, for example, 12 to 140 bases long, 15 to 80 bases long, 18 to 60 bases long.
  • the phrase “the other sequence is complementary to a certain sequence” means, for example, a sequence that can be annealed between the two. The annealing is also referred to as stem formation, for example.
  • “complementary” means, for example, that complementarity when two kinds of sequences are aligned is, for example, 90% or more, 95% or more, 96% or more, 97% or more, 98% or more, 99% or more. Yes, preferably 100%, ie fully complementary.
  • the other sequence is complementary to a certain sequence when the sequence is directed from the 5 ′ side to the 3 ′ side, and the sequence is directed from the other 3 ′ side to the 5 ′ side. Means that the bases of each other are complementary.
  • the nucleic acid sensor (I) is, for example, a double-stranded nucleic acid sensor composed of a first strand (ss1) and a second strand (ss2),
  • the first strand (ss1) has the three-dimensional region (D) and the binding region (A) in this order
  • the second strand (ss2) has a stem forming region (S D ) and a stem forming region (S A ) in this order
  • the stem forming region (S D ) has a sequence complementary to the three-dimensional forming region (D)
  • the stem forming region (S A ) has a sequence complementary to the binding region (A)
  • the stereogenic region (D) is inhibited from forming the stereostructure and hybridizes with the second chain (ss2)
  • the three-dimensional formation region (D) forms the three-dimensional structure by contacting the steroid skeleton-
  • the three-dimensional formation region (D) is, for example, the single-stranded type.
  • the binding nucleic acid molecule such as an aptamer generally changes to a more stable structure by binding with the steroid compound and can bind to the steroid compound.
  • binding region such as an aptamer
  • the three-dimensional structure of a nucleic acid sequence such as a G-quartet structure is generally considered to have a higher abundance of relatively stable ones.
  • the sensor (I) in the absence of the steroid compound, has the three-dimensional formation region (D) and the second chain (ss2) of the first chain (ss1).
  • the binding region (A) of the first chain (ss1) and the stem formation region (S A ) of the second chain (ss2) are annealed, so that in the binding region (A), the steroid The formation of a more stable structure for binding to the compound is blocked, and the structure in a state not bonded to the steroid compound is maintained.
  • the sensor (I) can anneal the binding region (A) and the stem formation region (S A ) by contacting the steroid compound with the binding region (A).
  • the binding region (A) changes to the stable structure. Accordingly, the annealing of the three-dimensional formation region (D) and the stem formation region (S D ) is released, and the three-dimensional structure is formed in the region of the three-dimensional formation region (D) (switch-ON). . Also, as shown in FIG. 1B, annealing between the binding region (A) and the stem formation region (S A ), and between the three-dimensional formation region (D) and the stem formation region (S D ) When the annealing is released, the first strand (ss1) is dissociated from the second strand (ss2), and as a result, the first strand (ss1) can move out of the Debye length range. It becomes.
  • the steroid compound in the presence of the steroid compound, that is, when the three-dimensional structure is formed, the number of nucleotides of the Debye length is in the absence of the steroid compound, that is, the formation of the three-dimensional structure. Therefore, the steroid compound can be analyzed qualitatively or quantitatively.
  • the second chain (ss2) is described as being disposed in the transistor. However, as will be described later, the first chain (ss1) is disposed in the transistor. Also good.
  • the ss1 includes the first chain (ss1) and the second chain (ss2), and in the presence of the steroid compound, the first chain (ss1) or the second chain (ss2). ) Dissociates and moves, for example, outside the Debye length range. For this reason, even when the steroid compound has a charge, in the presence of the steroid compound, the charge in the Debye length range is equal to the number of dissociated first chains (ss1) or second chains (ss2). Fluctuate accordingly. For this reason, the sensor (I) is excellent in versatility because, for example, the influence of the charge of the steroid compound is reduced.
  • the three-dimensional formation region (D) and the stem formation region (S D ) are annealed in the order of the regions, and the binding region (A) and the stem formation region (S A ) are annealed. And the order of annealing.
  • the following order can be illustrated as a specific example. (1) ss1 5'- AD-3 ' ss2 3'- S A -S D -5 ' (2) ss1 5'- DA-3 ' ss2 3'- S D -S A -5 '
  • the sensor (I) may be connected, for example, directly or indirectly between the regions.
  • the direct connection means that, for example, the 3 ′ end of one region and the 5 ′ end of the other region are directly bonded, and the indirect connection is, for example, 3 of one region. It means that the “end” and the 5 ′ end of the other region are bound via an intervening linker region.
  • the intervening linker region may be, for example, a nucleic acid sequence or a non-nucleic acid sequence, preferably the former.
  • the sensor (I) includes, for example, the stem formation region (A) between the binding region (A) and the three-dimensional formation region (D) in the first strand (ss1) and the second strand (ss2). It is preferable to have the intervening linker region between S D ) and the stem formation region (S A ).
  • the intervening linker region (L 1 ) in the first strand (ss1) and the intervening linker region (L 2 ) in the second strand (ss2) are preferably non-complementary sequences.
  • the formation of a three-dimensional structure is turned on and off as follows.
  • the binding region (A) and the stem formation region (S A ) the three-dimensional formation region (D) and the stem formation region (S D ) each form a stem,
  • the intervening linker region (L 1 ) and the intervening linker region (L 2 ) form an internal loop to inhibit the formation of the three-dimensional structure of the three-dimensional formation region (D).
  • the formation of each stem is released by the contact of the steroid compound with the binding region (A), and the three-dimensional structure is formed in the three-dimensional formation region (D).
  • the lengths of the stem formation region (S A ) and the stem formation region (S D ) are not particularly limited.
  • the length of the stem formation region (S A ) is, for example, 1 to 60 bases long, 1 to 10 bases long, or 1 to 7 bases long.
  • the length of the stem formation region (S D ) is, for example, 1 to 30 bases, 0 to 10 bases, 1 to 10 bases, 0 to 7 bases, or 1 to 7 bases.
  • the stem formation region (S A ) and the stem formation region (S D ) may have the same length, the former may be long, or the latter may be long.
  • the lengths of the intervening linker regions (L 1 ) and (L 2 ) are not particularly limited.
  • the lengths of the intervening linker regions (L 1 ) and (L 2 ) are, for example, 0 to 30 bases, 1 to 30 bases, 1 to 15 bases, and 1 to 6 bases, respectively.
  • the lengths of the intervening linker regions (L 1 ) and (L 2 ) may be the same or different, for example. In the latter case, the difference in length between the intervening linker regions (L 1 ) and (L 2 ) is not particularly limited, and is, for example, 1 to 10 bases long, 1 or 2 bases long, and 1 base long.
  • the lengths of the first strand (ss1) and the second strand (ss2) are not particularly limited.
  • the length of the first strand (ss1) is, for example, 40 to 200 bases long, 42 to 100 bases long, 45 to 60 bases long.
  • the length of the second strand (ss2) is, for example, 4 to 120 bases long, 5 to 25 bases long, or 10 to 15 bases long.
  • the first chain (ss1) and the second chain (ss2) may be directly or indirectly linked.
  • the sensor (I) can be referred to as a single-stranded nucleic acid sensor, for example, and the first strand (ss1)
  • the second strand (ss2) can be referred to as a first region and a second region, respectively.
  • the direct connection means that, for example, the 3 ′ end of one region and the 5 ′ end of the other region are directly bonded, and the indirect connection is, for example, 3 of one region.
  • the intervening linker region may be, for example, a nucleic acid sequence or a non-nucleic acid sequence, preferably the former.
  • the length of the intervening linker region is not particularly limited and is, for example, 1 to 60 bases long.
  • the first region, the intervening linker region, and the second region may be connected in this order from the 5 ′ side. They may be connected in this order from the 3 ′ side, preferably the former.
  • one end of the first chain (ss1) or the second chain (ss2) may be connected to the transistor.
  • a linker region may be further added to the one end or both ends of the first strand (ss1) and the second strand (ss2).
  • the linker region added to the terminal is also referred to as an additional linker region.
  • the length of the additional linker region is not particularly limited and is, for example, 1 to 60 bases long.
  • one end of the first strand (ss1) or the second strand (ss2) may be connected to the transistor via an additional linker region.
  • (A) a polynucleotide comprising the base sequence of (a1), (a2) or (a3) below (a1) SEQ ID NO: 1 (a2) in the base sequence of SEQ ID NO: 1, wherein one or several bases are It consists of a base sequence deleted, substituted, inserted and / or added, the region corresponding to the binding region (A) binds to cortisol, and the region corresponding to the stereogenic region (D) is the predetermined three-dimensional structure
  • the polynucleotide (a3) comprising the nucleotide sequence having the identity of 80% or more with respect to the nucleotide sequence of SEQ ID NO: 1, the region corresponding to the binding region (A) binds to cortisol, and the three-dimensional formation
  • (B) a polynucleotide consisting of the base sequence of (b1), (b2), or (b3) below (b1) SEQ ID NO: 2 (b2) in the base sequence of SEQ ID NO: 2, wherein one or several bases deleted, substituted, inserted and / or added in the nucleotide sequence, wherein the system forming area (S a) a region corresponding to the said bound to the binding region (a) of the polynucleotide of (a) (annealing) A region corresponding to the stem-forming region (S D ) with respect to the base sequence of the polynucleotide (b3) SEQ ID NO: 2 that binds (anneals) to the three-dimensional formation region (D) of the polynucleotide of (a), the base sequence having 80% or more identity, coupled to the coupling region of a polynucleotide of the stem forming regions (S a) a region corresponding to said (a) (a) Annealing), and said
  • the polynucleotide (a1) is a polynucleotide having the base sequence of SEQ ID NO: 1 below.
  • the base sequence indicated by the underline at the 5 ′ end corresponds to the three-dimensional formation region (D)
  • the base sequence indicated by the underline enclosed in parentheses at the 3 ′ end is the binding
  • the base sequence corresponding to the region (A) and not underlined corresponds to the intervening linker region (L 1 ).
  • First strand (ss1) (SEQ ID NO: 1): 5'- GGGTGGGAGGGTCGGG TTT [ GCAAGTTCTTCGCTCGTACTTGC ] -3 '
  • “one or several” means, for example, that the polynucleotide of (a2) binds to cortisol in the region corresponding to the binding region (A), and the three-dimensional region (D
  • the region corresponding to) may be a range that forms the predetermined three-dimensional structure.
  • the “1 or several” is, for example, 1 to 8, 1 to 4, 1 or 2, or 1 in the base sequence of (a1).
  • the numerical range of numbers such as the number of bases and the number of sequences, for example, discloses all positive integers belonging to the range. That is, for example, the description “1 to 5 bases” means all disclosures of “1, 2, 3, 4, 5 bases” (the same applies hereinafter).
  • identity means, for example, that the polynucleotide of (a3) binds to cortisol in the region corresponding to the binding region (A), and the stereogenic region (D)
  • the corresponding region may be a range that forms the predetermined three-dimensional structure.
  • the “identity” is, for example, 80% or more, 85% or more, 90% or more, 95% or more, 96% or more, 97% or more, 98% or more, 99% or more.
  • the identity can be calculated with default parameters using analysis software such as BLAST and FASTA (hereinafter the same).
  • the polynucleotide (b1) is a polynucleotide having the base sequence of SEQ ID NO: 2 below.
  • the base sequence indicated by the underline at the 5 ′ end corresponds to the stem formation region (S A )
  • the base sequence indicated by the underline enclosed in parentheses at the 3 ′ end is The base sequence without underline corresponding to the stem formation region (S D ) corresponds to the intervening linker region (L 2 ).
  • Second strand (ss2) (SEQ ID NO: 2): 5'- AACTTGC TTT [ CCCGACCC ] -3 '
  • the polynucleotide of (b2) “one or several” means, for example, that the polynucleotide of (b2) is a region corresponding to the stem forming region (S A ) of the polynucleotide of (a).
  • the region that binds to the binding region (A) and corresponds to the stem forming region (S D ) may be in a range that binds to the three-dimensional forming region (D) of the polynucleotide of (a).
  • the polynucleotide (b2) may be any of the polynucleotides (a), the stem formation region (S A ), and the stem formation region (S D ) as long as they can be combined as described above.
  • the “1 or several” is, for example, 1 to 4, 1 to 3, 1 or 2, or 1 in the base sequence of (b1).
  • identity means, for example, that the polynucleotide of (b3) is a region corresponding to the stem-forming region (S A ), and the binding region of the polynucleotide of (a)
  • the region that binds to (A) and corresponds to the stem forming region (S D ) may be in a range that binds to the three-dimensional forming region (D) of the polynucleotide of (a).
  • the polynucleotide (b3) may be any one of the polynucleotides (a), the stem formation region (S A ), and the stem formation region (S D ) as long as they can be combined as described above.
  • the “identity” is, for example, 80% or more, 85% or more, 90% or more, 95% or more, 96% or more, 97% or more, 98% or more, 99% or more.
  • the binding region (A) in the absence of the steroid compound, the binding region (A) does not form a more stable structure for binding to the steroid compound, and the stem-forming region (S A )
  • the formation of the stable structure is blocked in the binding region (A), and the structure that is not bound to the steroid compound is maintained. Accordingly, the formation of the three-dimensional structure of the three-dimensional formation region (D) is inhibited (switch-OFF), and the stem formation region (S D ) anneals to the three-dimensional formation region (D). .
  • the sensor (I) in the absence of the steroid compound, the first strand (ss1) and the second strand (ss2) are hybridized.
  • the sensor (I) changes the binding region (A) into the stable structure by the contact of the steroid compound with the binding region (A), thereby forming the stem formation.
  • the region (S A ) does not anneal to the binding region (A).
  • the stem formation region (S D ) does not anneal to the solid formation region (D), and the solid structure is formed in the region of the solid formation region (D) (switch -ON).
  • the annealing between the bonding region (A) and the stem formation region (S A ) and the annealing between the three-dimensional formation region (D) and the stem formation region (S D ) are not formed, so that the first The strand (ss1) does not hybridize to the second strand (ss2), and the first strand (ss1) can move out of the Debye length range. Therefore, according to the sensor (I), in the presence of the steroid compound, that is, when the three-dimensional structure is formed, the number of nucleotides of the Debye length is in the absence of the steroid compound, that is, the formation of the three-dimensional structure. Therefore, the steroid compound can be analyzed qualitatively or quantitatively.
  • the second chain (ss2) has been described as an example arranged in the transistor, the first chain (ss1) may be arranged in the transistor.
  • the sensor (II) can be turned on and off by the three-dimensional structure of the three-dimensional formation region (D) depending on the presence or absence of the steroid compound based on the following mechanism, for example. It is presumed that the number of nucleotide residues constituting the sensor increases in the range of the Debye length. Note that the present invention is not limited to this mechanism. As shown in FIG. 2A, in the sensor (II), in the absence of the steroid compound, formation of the three-dimensional structure of the three-dimensional formation region (D) is inhibited in the molecule (switch-OFF ).
  • the sensor (II) is more stable for the binding region (A) to bind to the steroid compound by the contact of the steroid compound with the binding region (A). Change to structure. Along with this, the three-dimensional structure is formed in the region of the three-dimensional formation region (D) (switch-ON). Further, as shown in FIG. 2B, the binding region (A) changes to the stable three-dimensional structure, and the three-dimensional formation region (D) forms a three-dimensional structure, whereby the sensor ( II) shrinks to the transistor side, for example.
  • the steroid compound in the presence of the steroid compound, that is, when the three-dimensional structure is formed, the number of nucleotides of the Debye length is in the absence of the steroid compound, that is, the formation of the three-dimensional structure. Therefore, the steroid compound can be analyzed qualitatively or quantitatively.
  • the senor (II) is, for example, at least one sensor selected from the group consisting of the following (i) to (iv) and (v).
  • the sensor (II) may include, for example, one type of sensor or may include two or more types of sensors.
  • Nucleic acid sensor (i) The sensor (i) has, for example, the three-dimensional formation region (D), the blocking region (B), and the binding region (A) in this order,
  • the blocking region (B) is complementary to a partial region (Dp) in the three-dimensional region (D);
  • a terminal region (Ab) on the blocking region (B) side in the binding region (A) is complementary to a region (Df) adjacent to the partial region (Dp) in the three-dimensional formation region (D), and
  • the single-stranded nucleic acid sensor is complementary to a terminal region (Af) opposite to the blocking region (B).
  • stem formation between the partial region (Dp) of the stereogenic region (D) and the blocking region (B) and the adjacent region (Df) of the stereogenic region (D) And stem formation of the terminal region (Ab) of the binding region (A) occurs.
  • the former stem formation inhibits the formation of the three-dimensional structure of the three-dimensional formation region (D) (switch-OFF), and the latter stem formation causes the binding region (A) to bind to the steroid compound.
  • the formation of a more stable structure is blocked, and the structure that is not bonded to the steroid compound is maintained.
  • the binding region (A) changes to the stable structure by the contact of the steroid compound with the binding region (A).
  • stem formation in the binding region (A) is released, and the steroid compound binds to the binding region (A) changed to the stable structure.
  • the stem formation of the three-dimensional formation region (D) is also released, and the three-dimensional formation region (D) becomes more
  • the structure changes to a stable structure, and as a result, a three-dimensional structure is formed in the region of the three-dimensional formation region (D) (switch-ON).
  • the sensor (i) may further have a stabilization region (S).
  • the conversion regions (S) are preferably connected in this order.
  • the stabilization region (S) is optional and may not be included.
  • the stabilization region (S) is, for example, a sequence for stabilizing the structure when the binding region (A) binds to the steroid compound.
  • the stabilization region (S) is, for example, complementary to the blocking region (B) or complementary to a part thereof, specifically, on the binding region (A) side in the blocking region (B). It is preferably complementary to the terminal region (Ba).
  • the stabilization region (S) connected to the binding region (A) and the binding region ( A stem is also formed between the blocking region (B) and the terminal region (Ba) connected to A).
  • the order of the three-dimensional formation region (D), the blocking region (B), the binding region (A), and the optional stabilization region (S) is not particularly limited. They may be connected in this order from the 5 ′ side, or may be connected in this order from the 3 ′ side, preferably the former.
  • the arrangement and length of the blocking region (B) are not particularly limited, and can be appropriately set according to, for example, the arrangement and length of the three-dimensional formation region (D).
  • the length of the blocking region (B) is not particularly limited, and the lower limit is, for example, 1 base length, 2 base lengths, 3 base lengths, and the upper limit is, for example, 20 base lengths, 15 base lengths, 10 bases
  • the range is, for example, 1 to 20 bases long, 2 to 15 bases long, and 3 to 10 bases long.
  • the position of the partial region (Dp) in the solid formation region (D), that is, the annealing region of the blocking region (B) in the solid formation region (D) is not particularly limited.
  • the partial region (Dp) Can be set under the following conditions, for example.
  • the three-dimensional formation region (D) is a region adjacent to the partial region (Dp), which is the blocking region (B) side end of the partial region (Dp) and the three-dimensional formation region (D) in the blocking region (B).
  • the lower limit of the length of the region (Db) between the side ends is, for example, 3 base length, 4 base length, 5 base length
  • the upper limit is, for example, 40 base length, 30 base length, 20 base length.
  • the range is, for example, 3 to 40 bases long, 4 to 30 bases long, and 5 to 20 bases long.
  • the lower limit of the length of the region (Df) adjacent to the partial region (Dp) in the three-dimensional region (D) and opposite to the blocking region (B) side is, for example, 0 base length
  • the upper limit is, for example, 40 base length, 30 base length, 20 base length
  • the range is, for example, 0-40 base length, 1-30 base length, It is 20 bases long.
  • the length of the terminal region (Ab) in the binding region (A) complementary to the adjacent region (Df) of the three-dimensional region (D) is not particularly limited, and the lower limit is, for example, one base length
  • the upper limit is, for example, 20 base length, 8 base length, 3 base length, and the range is, for example, 1-20 base length, 1-8 base length, 1-3 base length.
  • the sequence and length of the stabilization region (S) are not particularly limited, and are appropriately determined according to, for example, the sequence and length of the blocking region (B), the sequence and length of the binding region (A), and the like. it can.
  • the lower limit of the length of the stabilization region (S) is, for example, 0 base length and 1 base length
  • the upper limit is, for example, 10 base length, 5 base length, 3 base length
  • the range is For example, the length is 0 to 10 bases, 1 to 5 bases, or 1 to 3 bases.
  • the stabilization region (S) is complementary to the entire blocking region (B)
  • the blocking region (B) has the same length as the stabilization region (S).
  • the stabilization region (S) is complementary to a part of the blocking region (B), a part of the blocking region (B), for example, the terminal region (Ba) It is the same length as (S).
  • the total length of the sensor (i) is not particularly limited, and the lower limit is, for example, 25 base length, 35 base length, 40 base length, and the upper limit is, for example, 200 base length, 120 base length, 80 The base length is, for example, 25 to 200 bases, 35 to 120 bases, 40 to 80 bases.
  • one end of the sensor (i) may be connected to the transistor.
  • the additional linker region may be further added to one end or both ends.
  • the length of the additional linker region is not particularly limited, and for example, the above description can be used.
  • one end of the sensor (i) may be connected to the transistor via the additional linker region.
  • Nucleic acid sensor (ii) The sensor (ii) has, for example, the three-dimensional formation region (D), the blocking region (B), the binding region (A), and the stabilization region (S) in this order,
  • the blocking region (B) is complementary to a partial region (Dp) of the three-dimensional formation region (D);
  • the terminal region (Ba) on the binding region (A) side of the blocking region (B) is a single-stranded nucleic acid sensor that is complementary to the stabilization region (S).
  • the three-dimensional formation region (D) is, for example, the single-stranded type.
  • the binding region (A) is preferably a sequence that alone does not form intramolecular annealing necessary for binding to the steroid compound. Then, the sensor (ii) is obtained by annealing the terminal region (Ba) of the blocking region (B) adjacent to the binding region (A) and the stabilization region (S) in the presence of the steroid compound. It is preferable that a stable structure for binding to the steroid compound is formed from the whole of the binding region (A), the terminal region (Ba), and the stabilization region (S).
  • the formation of the three-dimensional structure of the three-dimensional formation region (D) is controlled to ON-OFF depending on the presence or absence of the steroid compound.
  • the number of nucleotide residues constituting the sensor is estimated to increase. Note that the present invention is not limited to this mechanism.
  • the partial region (Dp) of the three-dimensional formation region (D) is complementary to the blocking region (B)
  • stem formation is possible in this complementary relationship. For this reason, in the absence of the steroid compound, stem formation occurs between the partial region (Dp) of the stereogenic region (D) and the blocking region (B).
  • the binding region (A) is a sequence that does not form intramolecular annealing necessary for binding to the steroid compound by itself, formation of a more stable structure for binding to the steroid compound is blocked. The structure in a state where it is not bonded to the steroid compound is maintained. On the other hand, in the presence of the steroid compound, the binding region (A) changes to the stable structure by the contact of the steroid compound with the binding region (A).
  • the stem formation of the blocking region (B) and the partial region (Dp) of the three-dimensional formation region (D) is released, and the terminal region (Ba) of the blocking region (B) and the stable region are newly added.
  • the stem is formed by annealing with the activating region (S), and this stem plays a role of intramolecular annealing necessary for the binding region (A) to bind to the steroid compound, and the stem and the binding region
  • the stable structure is formed from the entirety of (A), and the steroid compound is bound to the binding region (A).
  • the order of the three-dimensional formation region (D), the blocking region (B), the binding region (A), and the stabilization region (S) is not particularly limited.
  • 5 ′ They may be connected in this order from the side, or may be connected in this order from the 3 ′ side, preferably the former.
  • the description of the sensor (i) can be used unless otherwise indicated.
  • the three-dimensional formation region (D), the blocking region (B), and the stabilization region (S) are the same as, for example, the sensor (i).
  • the length of the terminal region (Ba) complementary to the stabilization region (S) is not particularly limited, and the lower limit is, for example, one base length, and the upper limit is, for example, 15 base length, 10 base length and 3 base length, and the range is, for example, 1 to 10 base length, 1 to 5 base length, and 1 to 3 base length.
  • the total length of the sensor (ii) is not particularly limited, and the lower limit is, for example, 25 base length, 35 base length, 40 base length, and the upper limit is, for example, 200 base length, 120 base length, 80 The base length is, for example, 25 to 200 bases, 35 to 120 bases, 40 to 80 bases.
  • the sensor (iii) includes, for example, the three-dimensional formation region (D), the stem formation region (S D ), the binding region (A), and the stem formation region (S A ).
  • the stem forming region (S D ) has a sequence complementary to the three-dimensional forming region (D)
  • the stem forming region (S A ) is a single-stranded nucleic acid sensor having a sequence complementary to the binding region (A).
  • the three-dimensional formation region (D) is, for example, the single-stranded type.
  • the binding region (A) and the stem formation region (S A ) are annealed, so that the binding region (A) has a more stable structure for binding to the steroid compound. Formation is blocked and the structure is not bonded to the steroid compound.
  • the sensor (iii) causes the annealing of the binding region (A) and the stem formation region (S A ) by the contact of the steroid compound with the binding region (A). When released, the structure of the binding region (A) changes to the stable structure.
  • the annealing of the three-dimensional formation region (D) and the stem formation region (S D ) is released, and the three-dimensional structure is formed in the region of the three-dimensional formation region (D) (switch-ON).
  • the sensor (iii) is, for example, on the transistor side. Shrink. Therefore, according to the sensor (iii), in the presence of the steroid compound, that is, when the three-dimensional structure is formed, the number of nucleotides of the Debye length is in the absence of the steroid compound, that is, the formation of the three-dimensional structure. Therefore, the steroid compound can be analyzed qualitatively or quantitatively.
  • the three-dimensional formation region (D) and the stem formation region (S D ) are annealed in the molecule, and the binding region (A) and the stem formation are performed in the sensor (iii).
  • the order of annealing with the region (S A ) is sufficient.
  • the following order can be illustrated as a specific example. (1) 5'- A-S D -D-S A -3 ' (2) 5'-S A -DSD D -A -3 ' (3) 5'- D-S A -A-S D -3 ' (4) 5'-S D -AS A -D -3 '
  • the formation of a three-dimensional structure is turned on and off as follows.
  • the binding region (A) and the stem formation region (S A ), the three-dimensional formation region (D) and the stem formation region (S D ) each form a stem, and the three-dimensional formation
  • the formation of the three-dimensional structure in the region (D) is inhibited.
  • the formation of the respective stems is released by the contact of the steroid compound with the binding region (A), and the three-dimensional structure is formed in the three-dimensional formation region (D).
  • the stem forming region (S D ) is complementary to the 3′-side region of the three-dimensional forming region (D), and the stem forming region (S A ) It is preferably complementary to the 3 ′ region of the region (A).
  • the stem formation region (S D ) is complementary to the 5′-side region of the three-dimensional formation region (D), and the stem formation region (S A ) It is preferably complementary to the 5 ′ region of the region (A).
  • the sensor (iii) preferably has, for example, two intervening linker regions that are non-complementary to each other as the intervening linker region.
  • the positions of the two intervening linker regions are not particularly limited.
  • the following order can be exemplified for the forms (1) to (4) further having two intervening linker regions.
  • the intervening linker region linked to the binding region (A) is indicated by (L 1 )
  • the intervening linker region linked to the stereogenic region (D) is indicated by (L 2 ).
  • the sensor (iii) may have, for example, both (L 1 ) and (L 2 ) as an intervening linker region, or may have only one of them.
  • the formation of the three-dimensional structure is turned on and off as follows.
  • the binding region (A) and the stem formation region (S A ) the three-dimensional formation region (D) and the stem formation region (S D ) each form a stem
  • the intervening linker region (L 1 ) and the intervening linker region (L 2 ) form an internal loop to inhibit the formation of the three-dimensional structure of the three-dimensional formation region (D).
  • the formation of the respective stems is released by the contact of the steroid compound with the binding region (A), and a three-dimensional structure is formed in the three-dimensional formation region (D).
  • the lengths of the intervening linker regions (L 1 ) and (L 2 ) are not particularly limited.
  • the lengths of the intervening linker regions (L 1 ) and (L 2 ) are, for example, 0 to 30 bases, 1 to 30 bases, 1 to 15 bases, and 1 to 6 bases, respectively.
  • the lengths of the intervening linker regions (L 1 ) and (L 2 ) may be the same or different, for example. In the latter case, the difference in length between the intervening linker regions (L 1 ) and (L 2 ) is not particularly limited, and is, for example, 1 to 10 bases long, 1 or 2 bases long, and 1 base long.
  • the length of the sensor (iii) is not particularly limited.
  • the length of the sensor (iii) is, for example, 40 to 120 bases long, 45 to 100 bases long, 50 to 80 bases long.
  • one end of the sensor (iii) may be connected to the transistor.
  • the senor (iii) includes, for example, the following polynucleotide (c).
  • (C) polynucleotide (c2) comprising the nucleotide sequence of SEQ ID NO: 3 (c1), polynucleotide (c1), (c3) or (c3) below:
  • (c1) In the nucleotide sequence of SEQ ID NO: 3, one or several bases It consists of a base sequence deleted, substituted, inserted and / or added, the region corresponding to the binding region (A) binds to cortisol, and the region corresponding to the stereogenic region (D) is the predetermined three-dimensional structure
  • the region corresponding to the stem formation region (S A ) is bonded (annealed) to the binding region (A), and the region corresponding to the stem formation region (S D ) is the solid formation region (D).
  • the polynucleotide (c3) that binds (anneals) to the nucleotide sequence of SEQ ID NO: 3 consists of a nucleotide sequence having at least 80% identity, and the region corresponding to the binding region (A) A region that binds to lutisol and that corresponds to the three-dimensional region (D) forms the predetermined three-dimensional structure, and a region that corresponds to the stem-forming region (S A ) binds to the binding region (A) (annealing). polynucleotide, and said stem forming regions (S D) corresponding to the region is bound (annealing) on the three-dimensional formation region (D)
  • the polynucleotide (c1) is a polynucleotide having the base sequence of SEQ ID NO: 3 below.
  • the base sequence indicated by the underline enclosed in parentheses is the stem-forming region (S A ) and the intervening linker region from the 5 ′ end to the 3 ′ end, respectively ( L 2 ), the three-dimensional formation region (D), the stem formation region (S D ), the intervening linker region corresponds to (L 1 ), and the binding region (A).
  • Single-stranded nucleic acid sensor (SEQ ID NO: 3): 5 '-[ ACCTCTG ] [ T ] [ GGGTGGGAGGGTCGGG ] [ CCC ] [ T ] [ CAGAGGTCTCTTTGCCCGTGAACTCTG ] -3'
  • identity means, for example, that the polynucleotide of (c3) binds to cortisol in the region corresponding to the binding region (A), and the stereogenic region (D)
  • the corresponding region forms the predetermined three-dimensional structure, the region corresponding to the stem forming region (S A ) is bonded to the bonding region (A), and the region corresponding to the stem forming region (S D ) is the What is necessary is just the range couple
  • the “identity” is, for example, 80% or more, 85% or more, 90% or more, 95% or more, 96% or more, 97% or more, 98% or more, 99% or more.
  • the additional linker region may be further added to one end or both ends.
  • the length of the additional linker region is not particularly limited, and for example, the above description can be used.
  • one end of the sensor (iii) may be connected to the transistor via the additional linker region.
  • Nucleic acid sensor (iv) The sensor (iv) has, for example, the three-dimensional formation region (D) and the binding region (A),
  • the three-dimensional formation region (D) includes a first region (D1) and a second region (D2), and forms a three-dimensional structure with the first region (D1) and the second region (D2).
  • a single-stranded nucleic acid sensor having the first region (D1) on one end side of the binding region (A) and the second region (D2) on the other end side of the binding region (A) It is.
  • the three-dimensional formation region (D) is, for example, the double-stranded type (hereinafter also referred to as “split type”).
  • the split-type three-dimensional formation region (D) is a molecule that includes the first region (D1) and the second region (D2), and the pair forms a three-dimensional structure.
  • the first region (D1) and the second region (D2) may each be a sequence that forms the three-dimensional structure, and more preferably a guanine quadruplex structure. Is an array.
  • the formation of the three-dimensional structure of the three-dimensional formation region (D) is controlled to be ON-OFF depending on the presence or absence of the steroid compound.
  • the number of nucleotide residues constituting the sensor is estimated to increase. Note that the present invention is not limited to this mechanism.
  • the sensor (iv) includes a pair of the first region (D1) and the second region (D2) that form a three-dimensional structure via the coupling region (A). Are located apart. Thus, since the first region (D1) and the second region (D2) are arranged at a distance, in the absence of the steroid compound, the first region (D1) and the second region (D2).
  • the formation of a three-dimensional structure is inhibited between the region (D2) (switch-OFF).
  • the structure of the binding region (A) in the presence of the steroid compound, has a stem-loop structure due to the contact of the steroid compound with the binding region (A). Changes to a more stable structure for bonding with. With the structural change of the coupling region (A), the first region (D1) and the second region (D2) approach each other, and the first region (D1) and the second region (D2) A three-dimensional structure is formed between them (switch-ON).
  • the bonding region (A) changes to the stable structure, and the three-dimensional formation region (D) forms the three-dimensional structure, so that the sensor (iv) is, for example, on the transistor side. Shrink. Therefore, according to the sensor (iv), in the presence of the steroid compound, that is, when the three-dimensional structure is formed, the number of nucleotides of the Debye length is in the absence of the steroid compound, that is, the formation of the three-dimensional structure. Therefore, the steroid compound can be analyzed qualitatively or quantitatively.
  • the first region (D1) and the second region (D2) may be arranged via the coupling region (A), and any one of the five of the coupling regions (A). It may be arranged on the 'side or 3' side.
  • the first region (D1) is disposed on the 5 ′ side of the coupling region (A)
  • the second region (D2) is disposed on the 3 ′ side of the coupling region (A). An example is shown.
  • the sensor (iv) includes the intervening linker region (first linker region (L 1 )) between the first region (D1) and the binding region (A). It is preferable that the intervening linker region (second linker region (L 2 )) is provided between two regions (D2) and the binding region (A).
  • the first linker region (L 1 ) and the second linker region (L 2 ) may be either one or preferably both. When both the first linker region (L 1 ) and the second linker region (L 2 ) are included, the respective lengths may be the same or different.
  • the length of the linker region is not particularly limited, and the lower limit is, for example, 1, 3, 5, 7, 9 bases, and the upper limit is, for example, 20, 15, 10 bases.
  • the distance between the first region (D1) and the second region (D2) can be sufficiently maintained. For this reason, for example, in the absence of the steroid compound, the formation of the three-dimensional structure by the first region (D1) and the second region (D2) is sufficiently suppressed, and in the absence of the steroid compound, The background based on the formation of the three-dimensional structure can be sufficiently reduced.
  • the sensor (iv) includes, for example, a sequence in which the first region (D1) and the second region (D2) are complementary to each other at the end opposite to the position of the binding region (A). It is preferable to have. Specifically, for example, when the first region (D1) is disposed on the 5 ′ side of the coupling region (A), the first region (D1) and the second region (D2) are: It is preferable that the 5 ′ end of the first region (D1) and the 3 ′ end of the second region (D2) have sequences complementary to each other. For example, when the first region (D1) is disposed on the 3 ′ side of the coupling region (A), the first region (D1) and the second region (D2) are the first region (D1).
  • the 3 ′ end of the region (D1) and the 5 ′ end of the second region (D2) preferably have complementary sequences.
  • a stem structure can be formed between the sequences by intramolecular annealing. It becomes possible. Therefore, for example, in the presence of the steroid compound, when the first region (D1) and the second region (D2) approach each other due to the structural change of the binding region (A) due to contact with the steroid compound, Formation of a stem structure between the arrays facilitates formation of a three-dimensional structure of the first region (D1) and the second region (D2).
  • (N) n1 and (N) m1 satisfy the following condition (1): N) n2 and (N) m2 preferably satisfy the following condition (2), and (N) n3 and (N) m3 preferably satisfy the following condition (3).
  • Condition (1) In (N) n1 and (N) m1 , the base sequence from the 5 ′ side of (N) n1 and the base sequence from the 3 ′ side of (N) m1 are complementary to each other, and n1 and m1 are The same 0 or a positive integer.
  • Condition (2) In (N) n2 and (N) m2 , the base sequence from the 5 ′ side of (N) n2 and the base sequence from the 3 ′ side of (N) m2 are non-complementary to each other, and n2 and m2 are Are positive integers, which may be the same or different.
  • N and (N) m3 are those in which n3 and m3 are 3 or 4, respectively, and may be the same or different, have three bases G, and when n3 or m3 is 4, (N) In n3 and (N) m3 , the second or third base is a base H other than G.
  • the condition (1) is a condition of (N) n1 at the 5 ′ end and (N) m1 at the 3 ′ end when the first region (D1) and the second region (D2) are aligned. .
  • the base sequence from the 5 ′ side of the (N) n1 and the base sequence from the 3 ′ side of the (N) m1 are complementary to each other and have the same length. Since (N) n1 and (N) m1 are complementary sequences of the same length, they can be said to be stem regions that form stems in an aligned state.
  • N1 and m1 may be the same 0 or a positive integer, and are, for example, 0, 1 to 10, and preferably 1, 2, or 3, respectively.
  • the condition (2) is a condition of (N) n2 and (N) m2 when the first region (D1) and the second region (D2) are aligned.
  • the base sequence of (N) n2 and the base sequence of (N) m2 are non-complementary to each other, and n2 and m2 may have the same length or different lengths. Since (N) n2 and (N) m2 are non-complementary sequences, they can be said to be regions that form an inner loop in an aligned state.
  • Examples of the base H that is a base other than G include A, C, T, and U, and preferably A, C, or T.
  • condition (3) include the following conditions (3-1), (3-2), and (3-3).
  • Condition (3-1) Among (N) n3 and (N) m3 , the sequence from one 5 ′ side is GHGG, and the sequence from the other 5 ′ side is GGG.
  • Condition (3-2) Among (N) n3 and (N) m3 , the sequence from one 5 ′ side is GGHG, and the sequence from the other 5 ′ side is GGG.
  • Condition (3-3) Both (N) n3 and (N) m3 sequences are GGG.
  • the length of the first region (D1) is not particularly limited, and the lower limit is, for example, 7 base length, 8 base length, 10 base length, and the upper limit is, for example, 30 base length, 20 base length, 10
  • the base length is, for example, 7 to 30 bases, 7 to 20 bases, or 7 to 10 bases.
  • the length of the second region (D2) is not particularly limited, and the lower limit thereof is, for example, 7 base length, 8 base length, 10 base length, and the upper limit thereof is, for example, 30 base length, 20 base length.
  • the range is, for example, 7 to 30 bases, 7 to 20 bases, or 7 to 10 bases.
  • the lengths of the first region (D1) and the second region (D2) may be the same or different.
  • one end of the sensor (iv) may be connected to the transistor.
  • Nucleic acid sensor (v) The sensor (v) has the three-dimensional formation region (D) and the binding region (A) in this order, The three-dimensional formation region (D) and the binding region (A) are single-stranded nucleic acid sensors having sequences complementary to each other.
  • the three-dimensional formation region (D) is, for example, the single-stranded type.
  • the binding region (A) and the three-dimensional formation region (D) are annealed in the molecule, so that the binding region (A) forms a more stable structure for binding to the steroid compound. Is blocked, and the structure in a state where it is not bonded to the steroid compound is maintained.
  • the structure of the binding region (A) changes to the stable structure by the contact of the steroid compound with the binding region (A).
  • the annealing in the region between the three-dimensional formation region (D) and the bonding region (A) is canceled, and the three-dimensional structure is formed in the region of the three-dimensional formation region (D) (switch-ON).
  • the coupling region (A) changes to the stable structure, and the three-dimensional formation region (D) forms the three-dimensional structure, so that the sensor (v) is, for example, on the transistor side. Shrink. Therefore, according to the sensor (v), in the presence of the steroid compound, that is, when the three-dimensional structure is formed, the number of nucleotides of the Debye length is in the absence of the steroid compound, that is, the formation of the three-dimensional structure. Therefore, the steroid compound can be analyzed qualitatively or quantitatively.
  • the three-dimensional formation region (D) and the binding region (A) are an arrangement from the 5 ′ side of the three-dimensional formation region (D) and a 3 ′ side of the binding region (A). Preferably have sequences complementary to each other.
  • the complementary sequence in the stereogenic region (D) and the complementary sequence in the binding region (A) can also be referred to as stem-forming regions (St), respectively, and the complementary sequence in the former stereogenic region (D) is
  • the stem formation region (S A ) for the binding region (A) and the complementary sequence in the latter binding region (A) can also be referred to as the stem formation region (S D ) for the three-dimensional formation region (D).
  • a part of the three-dimensional formation region (D) is the complementary sequence, that is, the stem formation region (S A ), and a part of the binding region (A) is, for example, the complementary sequence. That is, it is preferably the stem formation region (S D ).
  • the position of the complementary sequence in the three-dimensional region (D) and the position of the complementary sequence in the binding region (A) are not particularly limited.
  • the length of each complementary sequence between the three-dimensional region (D) and the binding region (A) is not particularly limited.
  • the length of each complementary sequence is, for example, 1 to 30 bases long, 1 to 10 bases long, or 1 to 7 bases long.
  • the three-dimensional formation region (D) and the binding region (A) may be directly or indirectly connected.
  • the direct connection means that, for example, the 3 ′ end of one region and the 5 ′ end of the other region are directly bonded, and the indirect connection is, for example, 3 of one region. It means that the “end” and the 5 ′ end of the other region are bonded via a linker region.
  • the intervening linker region may be, for example, a nucleic acid sequence or a non-nucleic acid sequence, preferably the former.
  • the length of the intervening linker region is not particularly limited and is, for example, 0 to 20 bases long, 1 to 10 bases long, or 1 to 6 bases long.
  • one end of the sensor (v) may be connected to the transistor.
  • the additional linker region may be further added to one end or both ends.
  • the length of the additional linker region is not particularly limited, and for example, the above description can be used.
  • one end of the sensor (v) may be connected to the transistor via the additional linker region.
  • the senor is a molecule including a nucleotide residue, and may be, for example, a molecule consisting of only a nucleotide residue or a molecule including a nucleotide residue.
  • the nucleotide is, for example, ribonucleotide, deoxyribonucleotide and derivatives thereof.
  • the sensor may be, for example, DNA containing deoxyribonucleotide and / or a derivative thereof, RNA containing ribonucleotide and / or a derivative thereof, or a chimera (DNA / RNA) containing the former and the latter But you can.
  • the sensor is preferably DNA.
  • the nucleotide may contain, for example, either a natural base (non-artificial base) or a non-natural base (artificial base) as a base.
  • a natural base include A, C, G, T, U, and modified bases thereof.
  • the modification include methylation, fluorination, amination, and thiolation.
  • the unnatural base include 2′-fluoropyrimidine, 2′-O-methylpyrimidine and the like. Specific examples include 2′-fluorouracil, 2′-aminouracil, 2′-O-methyluracil, And 2'-thiouracil.
  • the sensor is disposed in the transistor.
  • the sensor may be fixed directly or indirectly to the transistor.
  • the sensor is preferably fixed to the transistor at the end of the sensor.
  • the sensor may be fixed to the transistor via a fixing linker.
  • the linker may be, for example, a nucleic acid sequence or a non-nucleic acid sequence, and examples thereof include the above-described additional linker region.
  • the arrangement portion of the sensor can also be referred to as a detection portion in the transistor.
  • the non-nucleic acid sequence include sequences containing an alkyl group.
  • the sensor is immobilized on the transistor via the non-nucleic acid sequence, for example, as shown below.
  • n in (CH 2 ) n is, for example, 1 to 10, 2 to 10, or 6.
  • one end [—NH] of the non-nucleic acid sequence forms a single bond with an aldehyde group in the transistor, for example.
  • the other end [CH 2- ] of the non-nucleic acid sequence forms a single bond by an ester bond with phosphoric acid in the sensor, for example.
  • the immobilization method is not particularly limited, and examples thereof include chemical bonding.
  • the transistor has a structure in which Au (gold) is formed on an insulating film, a method of adding a thiol group to the sensor and immobilizing the sensor via the thiol group (T.TGoda and) Y.
  • the immobilization method for example, other known nucleic acid immobilization methods can be adopted. Examples of the method include a method using photolithography, and specific examples thereof can be referred to US Pat. No. 5,424,186.
  • the immobilization method includes, for example, a method of synthesizing the sensor on the transistor. As this method, for example, a so-called spot method can be mentioned.
  • US Pat. No. 5,807,522, Japanese Patent Publication No. 10-503841 and the like can be referred to.
  • the transistor is not particularly limited, and examples thereof include a transistor capable of detecting a change in charge in the Debye length range, and a specific example thereof is a field effect transistor.
  • a field effect transistor for example, a known field effect transistor can be used, and specific examples thereof include JP 2011-247795 A and International Publication No. 2014/024598.
  • the transistor includes, for example, a substrate, a source electrode, a drain electrode, a reference electrode, and a detection unit, and the source electrode, the drain electrode, and the detection unit are disposed on the substrate, and the detection The unit is disposed between the source electrode and the drain electrode, and the nucleic acid sensor is disposed in the detection unit.
  • the reference electrode is disposed in a solution containing an electrolyte (for example, a sample containing the electrolyte) that comes into contact with the detection unit.
  • the reference electrode is disposed so as not to contact the source electrode and the drain electrode.
  • the substrate, the source electrode, the drain electrode, and the like can refer to the configuration of the above-described known field effect transistor.
  • the transistor may include other configurations such as a gate electrode and an insulating film layer, for example, depending on the type of the field effect transistor.
  • the configuration of the aforementioned known field effect transistor can be referred to.
  • the device of the present invention may include, for example, a plurality of transistors.
  • each transistor includes a detection unit as described above, for example.
  • the number of sensors arranged in one detection unit is not particularly limited.
  • the Debye length means a Debye length of a solution (for example, an electrolyte solution) containing an electrolyte in contact with the transistor, and more specifically, a sample (for example, an electrolyte in contact with the detection unit of the transistor).
  • Debye length of a sample including The Debye length is not particularly limited, and can be calculated by a general Debye length calculation formula.
  • the Debye length can be calculated by the following formula (5).
  • the method for using the detection device of the present invention is not particularly limited, and can be used for the method for detecting a steroid-containing compound of the present invention as follows.
  • the sample is not particularly limited.
  • the sample may be, for example, either a sample containing the steroid compound or a sample in which it is unknown whether the steroid compound is contained.
  • the sample is preferably a liquid sample, for example.
  • the analyte when the analyte is a liquid, the analyte may be used as it is as a sample, or a diluted solution mixed in a solvent may be used as a sample.
  • the analyte is, for example, a solid or a powder, a mixed solution mixed with a solvent, a suspension suspended in a solvent, or the like may be used as a sample.
  • the solvent is not particularly limited, and examples thereof include water and a buffer solution.
  • the specimen examples include specimens collected from living organisms, soil, seawater, river water, sewage, food and drink, purified water, air, and the like.
  • the sample is preferably, for example, a liquid containing an electrolyte, that is, an electrolyte solution.
  • the sample can also be referred to as a sample containing an electrolyte.
  • the electrolyte is added to the sample.
  • the electrolyte is not particularly limited as long as it is a substance that separates into cations and anions in the liquid.
  • the contact step is a step of bringing a sample into contact with the detection device of the present invention.
  • the contact can be performed, for example, by bringing the sample into contact with the transistor in the detection device, and specifically, by bringing the sample into contact with a detection unit of the transistor.
  • the contact conditions (temperature, time) and the like in the contact step are not particularly limited.
  • the contact step may be performed, for example, by bringing the sample and the reagent into contact with the detection device, or by mixing the sample and the reagent in advance.
  • the mixture may be contacted.
  • the detection method of the present invention includes, for example, a mixing step of mixing the sample and the reagent, and a contacting step of bringing the mixture obtained into contact with the detection device.
  • the mixing is not particularly limited and can be performed by a known mixing method, for example, by bringing the reagent into contact with the sample.
  • the mixing conditions (temperature, time) and the like in the mixing step are not particularly limited.
  • the reagent include a reagent containing the first strand (ss1) or the second strand (ss2).
  • the detection step detects a steroid compound in the sample by detecting an increase or decrease in the number of nucleotide residues constituting the nucleic acid sensor in the range of the Debye length of the detection device.
  • the sensor increases or decreases the number of nucleotides of the Debye length as described above.
  • the nucleotide residue constituting the sensor has, for example, a negative charge. For this reason, in the presence of the steroid compound, the charge in the Debye length range is increased or decreased as compared to the absence of the steroid compound.
  • the detection step includes, for example, using the detection device to detect an increase or decrease in charge in the Debye length range, thereby increasing or decreasing the number of nucleotides in the Debye length, that is, a steroid in the sample.
  • Compounds can be detected. Therefore, the detection step includes, for example, a charge measurement step of measuring a charge in a Debye length range of the detection device using the detection device, and the Debye length based on the charge (measurement charge) and a reference charge.
  • a steroid compound detection step of detecting an increase or decrease in the number of nucleotide residues in a range and detecting the steroid compound.
  • the charge is measured by, for example, measuring an electric signal.
  • the electrical signal can be measured by, for example, a transistor of the detection device.
  • Examples of the electrical signal include a voltage and a current. Specific examples thereof include a voltage at the gate electrode (gate voltage), a current value at the drain electrode (drain current), and the like.
  • the current value at the drain electrode is preferably fixed.
  • the voltage at the gate electrode is, for example, a voltage when the current value at the drain electrode is 10 to 100 ⁇ A.
  • examples of the reference charge include charges in the Debye length range in the absence of the steroid compound. Then, by detecting whether the measured charge is increased or decreased compared to the reference charge, for example, the presence or absence of a steroid compound in the sample can be analyzed (qualitative), and the reference charge and the By detecting the difference in charge from the measured charge, for example, the amount of the steroid compound in the sample can be analyzed (quantified).
  • the presence of the steroid compound can be analyzed, and the reference charge and If it is the same or significantly higher than the reference charge, it can be analyzed without the steroid compound.
  • the number of nucleotide residues in the Debye length decreases due to the presence of the steroid compound, if the charge is significantly higher than the reference charge, the presence of the steroid compound can be analyzed and is the same as the reference charge, or the If it is significantly lower than the reference charge, it can be analyzed that there is no steroid compound.
  • the reference charge may be a calibration curve indicating a correlation between the amount of the steroid compound and the measured charge.
  • the amount of the steroid compound in the sample can be calculated based on the measured charge.
  • nucleic acid sensor (I) As the double-stranded nucleic acid sensor (nucleic acid sensor (I)), a polynucleotide comprising the nucleotide sequence of SEQ ID NO: 1 (first strand) and a polynucleotide comprising the nucleotide sequence of SEQ ID NO: 2 ( Second strand). In addition, a polynucleotide comprising the nucleotide sequence of SEQ ID NO: 3 was synthesized as the single nucleic acid sensor (sensor (iii)). Next, on the gate insulating film such as SiO 2 or Si 3 N 4 in an ion sensitive transistor ISFET (see P.
  • the gate insulating film such as SiO 2 or Si 3 N 4 in an ion sensitive transistor ISFET (see P.
  • Organic monolayer was formed by self-organization method.
  • phosphoric acid in the first-strand and single-stranded nucleic acid sensors and the C-terminus via glutaraldehyde OHC (CH 2 ) 3 CHO which is an amine-reactive cross-linking agent A single bond was made with the amino terminus of the non-nucleic acid sequence represented by the above formula (4), which was ester-linked with.
  • n is 6.
  • the composition of the buffer was 5.558328 mmol / L KCl, 0.0588 mmol / L KH 2 PO 4 and 0.32408 mmol / L K 2 HPO 4 .
  • the conditions for measuring the Vg-ID characteristics were as follows.
  • Vg s Vg s
  • Vg 0 Vg
  • the double-stranded nucleic acid sensor is prepared by mixing 10 ⁇ L of a solution containing 10 ⁇ mol / L of the first strand and 10 ⁇ L of a solution containing 10 ⁇ mol / L of the second strand, and using the obtained mixed solution as the buffer. The mixture was added, incubated at 95 ° C. for 5 minutes, allowed to stand at room temperature for 55 minutes, and slowly returned to room temperature to form a double strand. Then, ⁇ Vg was calculated in the same manner as the single-stranded sensor except that the nucleic acid sensor after the double-stranded formation was immobilized on the ion-sensitive transistor ISFET as described above. These results are shown in FIGS.
  • FIG. 3 is a graph showing ⁇ Vg when the single-stranded sensor is used.
  • the horizontal axis indicates the concentration of cortisol
  • the vertical axis indicates ⁇ Vg.
  • ⁇ Vg increased with increasing cortisol concentration. That is, it was found that the concentration of cortisol can be measured based on ⁇ Vg.
  • FIG. 4 is a graph showing ⁇ Vg when the double-stranded sensor is used.
  • the horizontal axis indicates the concentration of cortisol
  • the vertical axis indicates ⁇ Vg.
  • ⁇ Vg decreased with increasing cortisol concentration. That is, it was found that the concentration of cortisol can be measured based on ⁇ Vg.
  • a part or all of the above embodiments and examples can be described as, but not limited to, the following supplementary notes (Appendix 1) Including a transistor in which a nucleic acid sensor for detecting a steroid skeleton-containing compound is disposed;
  • the nucleic acid sensor is A stereogenic region (D) that forms a predetermined stereostructure and a binding region (A) that binds to the steroid skeleton-containing compound; In the absence of the steroid skeleton-containing compound, the stereogenic region (D) is inhibited from forming the stereostructure, In the presence of the steroid skeleton-containing compound, by the contact of the steroid skeleton-containing compound with the binding region (A), the three-dimensional formation region (D) forms the three-dimensional structure, During the formation of the three-dimensional structure, The steroid skeleton-containing compound is present in a solution containing an electrolyte, A device for detecting a steroid skeleton-containing compound, wherein the
  • the first strand (ss1) has the three-dimensional region (D) and the binding region (A) in this order
  • the second strand (ss2) has a stem forming region (S D ) and a stem forming region (S A ) in this order
  • the stem forming region (S D ) has a sequence complementary to the three-dimensional forming region (D)
  • the stem forming region (S A ) has a sequence complementary to the binding region (A)
  • the stereogenic region (D) is inhibited from forming the stereostructure and hybridizes with the second chain (ss2)
  • the three-dimensional formation region (D) forms the three-dimensional structure by contacting the steroid skeleton-containing compound with the binding region (A) of the first chain (ss1), and Dis
  • (II) a single-stranded nucleic acid sensor having the three-dimensional formation region (D) and the binding region (A), In the absence of the steroid skeleton-containing compound, the stereogenic region (D) is inhibited from forming the stereostructure, In the presence of the steroid skeleton-containing compound, by the contact of the steroid skeleton-containing compound with the binding region (A), the three-dimensional formation region (D) forms the three-dimensional structure, During the formation of the three-dimensional structure, A single-stranded nucleic acid sensor, wherein the number of nucleotide residues constituting the nucleic acid sensor in the Debye length range is greater than that at the time of inhibiting the formation of the three-dimensional structure.
  • nucleic acid sensor (II) is at least one nucleic acid sensor selected from the group consisting of the following (i) to (iv) and (v).
  • the blocking region (B) is complementary to a partial region (Dp) in the three-dimensional region (D);
  • a terminal region (Ab) on the blocking region (B) side in the binding region (A) is complementary to a region (Df) adjacent to the partial region (Dp) in the three-dimensional formation region (D), and
  • a single-stranded nucleic acid sensor which is complementary to a terminal region (Af) opposite to the blocking region (B) in the binding region (A).
  • a single-stranded nucleic acid sensor having the first region (D1) on one end side of the binding region (A) and the second region (D2) on the other end side of the binding region (A) .
  • (V) having the three-dimensional formation region (D) and the binding region (A) in this order;
  • the single-stranded nucleic acid sensor in which the three-dimensional region (D) and the binding region (A) have complementary sequences.
  • (Appendix 9) In the above-mentioned (i) or (ii) single-stranded nucleic acid sensor, The detection device according to supplementary note 8, including the three-dimensional formation region (D), the blocking region (B), and the binding region (A) in this order from the 5 ′ side.
  • the first region (D1) and the second region (D2) are: The detection device according to appendix 8, wherein the detection devices each include a sequence complementary to each other at the end opposite to the position of the binding region (A).
  • the detection device according to appendix 8 In the (v) single-stranded nucleic acid sensor, The detection device according to appendix 8, wherein the sequence from the 5 'side of the three-dimensional formation region (D) and the sequence from the 3' side of the binding region (A) have complementary sequences to each other.
  • the three-dimensional formation region (D) is a G formation region (G) forming a G-quartet structure, 15.
  • Appendix 18 A contact step of bringing a sample into contact with the detection device according to any one of appendices 1 to 17, and detecting an increase or decrease in the number of nucleotide residues constituting the nucleic acid sensor in the range of the Debye length of the detection device.
  • skeleton containing compound in the said sample is included, The detection method of the steroid frame
  • Appendix 19 Using the detection device described in Appendix 5, A mixing step of mixing the sample and the reagent; Contacting the resulting mixture with the detection device, and detecting the increase or decrease in the number of nucleotide residues constituting the nucleic acid sensor in the Debye length range of the detection device, thereby the steroid in the sample
  • the detection step comprises A charge measuring step of measuring a charge in a debye length range of the detection device by the detection device; Supplementary note 18 or 19, comprising detecting an increase or decrease in the number of the nucleotide residues in the Debye length range based on the charge and the reference charge, and detecting the steroid skeleton-containing compound.
  • the detection method described. The detection method according to appendix 20, wherein the charge measurement is an electric signal measurement.
  • a steroid skeleton-containing compound containing cortisol can be detected.
  • the present invention can be said to be an extremely useful technique for research and examination in various fields such as clinical medicine, food, and environment.

Abstract

Provided are a novel steroid-skeleton-containing-compound detecting device and a steroid-skeleton-containing-compound detecting method using the same. A steroid-skeleton-containing-compound detecting device according to the present invention is characterized by including a transistor at which a nucleic-acid sensor for detecting a steroid-skeleton-containing compound is disposed, and is characterized in that the nucleic-acid sensor includes: a three-dimensional-body forming region (D) that forms a predetermined three-dimensional structure; and a bonding region (A) that bonds with the steroid-skeleton-containing compound, the three-dimensional-body forming region (D) inhibits the formation of the three-dimensional structure in the absence of the steroid-skeleton-containing compound, the three-dimensional-body forming region (D) forms the three-dimensional structure as a result of the steroid-skeleton-containing compound coming into contact with the bonding region (A) in the presence of the steroid-skeleton-containing compound, and at the time of formation of the three-dimensional structure, the steroid-skeleton-containing compound is present in an electrolyte-containing solution, and the number of nucleotide residues constituting the nucleic-acid sensor in the solution within the range of the Debye length thereof increases or decreases compared with when the formation of the three-dimensional structure is inhibited.

Description

ステロイド骨格含有化合物検出デバイスおよびこれを用いたステロイド骨格含有化合物の検出方法Steroid skeleton-containing compound detection device and method for detecting steroid skeleton-containing compound using the same
 本発明は、ステロイド骨格含有化合物検出デバイスおよびこれを用いたステロイド骨格含有化合物の検出方法に関する。 The present invention relates to a steroid skeleton-containing compound detection device and a steroid skeleton-containing compound detection method using the device.
 臨床医療、食品、環境等の様々な分野において、ターゲットの検出が必要とされている。前記ターゲットの検出は、一般的に、前記ターゲットとの相互作用を利用する方法が用いられている。 Detecting targets is required in various fields such as clinical medicine, food, and environment. For the detection of the target, a method using an interaction with the target is generally used.
 前記相互作用を利用する方法としては、前記ターゲットに結合する結合物質が配置されたトランジスタを使用し、前記結合物質と前記ターゲットとの結合時に生じる前記ターゲットが有する電荷に起因する電荷変化を検出することにより、前記ターゲットを検出する方法が知られている(非特許文献1)。 As a method of using the interaction, a transistor in which a binding substance that binds to the target is disposed is used, and a change in charge caused by the charge of the target generated when the binding substance and the target are bound is detected. Therefore, a method for detecting the target is known (Non-Patent Document 1).
 しかしながら、前記トランジスタを使用した方法は、電荷を有するターゲットの分析はできるが、コルチゾールを含むステロイド骨格含有化合物のように電荷をほとんど有さない、または有さないターゲットの分析ができないという問題があった。 However, although the method using the transistor can analyze a target having a charge, there is a problem that a target having little or no charge cannot be analyzed like a steroid skeleton-containing compound containing cortisol. It was.
 そこで、本発明は、新たなステロイド骨格含有化合物検出デバイスおよびこれを用いたステロイド骨格含有化合物の検出方法を提供することを目的とする。 Therefore, an object of the present invention is to provide a novel steroid skeleton-containing compound detection device and a method for detecting a steroid skeleton-containing compound using the same.
 本発明のステロイド骨格含有化合物検出デバイスは、ステロイド骨格含有化合物検出用核酸センサが配置されたトランジスタを含み、
前記核酸センサは、
 所定の立体構造を形成する立体形成領域(D)と前記ステロイド骨格含有化合物に結合する結合領域(A)とを有し、
 前記ステロイド骨格含有化合物非存在下、前記立体形成領域(D)は、前記立体構造の形成が阻害され、
 前記ステロイド骨格含有化合物存在下、前記結合領域(A)への前記ステロイド骨格含有化合物の接触により、前記立体形成領域(D)が前記立体構造を形成し、
前記立体構造の形成時において、
 前記ステロイド骨格含有化合物は、電解質を含む溶液中に存在し、
 前記溶液のデバイ長の範囲における前記核酸センサを構成するヌクレオチド残基の数が、前記立体構造の形成の阻害時よりも増加または減少することを特徴とする。
The steroid skeleton-containing compound detection device of the present invention includes a transistor in which a nucleic acid sensor for detecting a steroid skeleton-containing compound is disposed,
The nucleic acid sensor is
A stereogenic region (D) that forms a predetermined stereostructure and a binding region (A) that binds to the steroid skeleton-containing compound;
In the absence of the steroid skeleton-containing compound, the stereogenic region (D) is inhibited from forming the stereostructure,
In the presence of the steroid skeleton-containing compound, by the contact of the steroid skeleton-containing compound with the binding region (A), the three-dimensional formation region (D) forms the three-dimensional structure,
During the formation of the three-dimensional structure,
The steroid skeleton-containing compound is present in a solution containing an electrolyte,
The number of nucleotide residues constituting the nucleic acid sensor in the Debye length range of the solution is increased or decreased as compared with the inhibition of formation of the three-dimensional structure.
 本発明のステロイド骨格含有化合物の検出方法は、前記本発明の検出デバイスに試料を接触させる接触工程、および
前記検出デバイスのデバイ長の範囲における核酸センサを構成するヌクレオチド残基の数の増加または減少を検出することによって、前記試料中のステロイド骨格含有化合物を検出する検出工程を含むことを特徴とする。
The method for detecting a steroid skeleton-containing compound of the present invention comprises a contact step of bringing a sample into contact with the detection device of the present invention, and an increase or decrease in the number of nucleotide residues constituting a nucleic acid sensor in the Debye length range of the detection device. By detecting a steroid skeleton-containing compound in the sample.
 本発明のステロイド骨格含有化合物検出デバイスおよびそれを用いたステロイド骨格含有化合物の検出方法によれば、コルチゾールを含むステロイド骨格含有化合物を検出できる。 The steroid skeleton-containing compound detection device of the present invention and the steroid skeleton-containing compound detection method using the device can detect a steroid skeleton-containing compound containing cortisol.
図1は、本発明のデバイスにおける核酸センサの構造変化を示す模式図である。FIG. 1 is a schematic view showing a structural change of a nucleic acid sensor in the device of the present invention. 図2は、本発明のデバイスにおける核酸センサの構造変化を示す模式図である。FIG. 2 is a schematic diagram showing the structural change of the nucleic acid sensor in the device of the present invention. 図3は、本願実施例1における一本鎖型センサを用いた際のΔVgを示すグラフである。FIG. 3 is a graph showing ΔVg when the single-stranded sensor in Example 1 of the present application is used. 図4は、本願実施例1における二本鎖型センサを用いた際のΔVgを示すグラフである。FIG. 4 is a graph showing ΔVg when the double-stranded sensor in Example 1 of the present application is used.
<ステロイド骨格含有化合物検出デバイス>
 本発明のステロイド骨格含有化合物検出デバイス(以下、「デバイス」ともいう)は、前述のように、ステロイド骨格含有化合物検出用核酸センサ(以下、「核酸センサ」または「センサ」ともいう)が配置されたトランジスタを含み、前記核酸センサは、所定の立体構造(以下、「所定の構造」ともいう)を形成する立体形成領域(D)と前記ステロイド骨格含有化合物(以下、「ステロイド化合物」ともいう)に結合する結合領域(A)とを有し、前記ステロイド骨格含有化合物非存在下、前記立体形成領域(D)は、前記立体構造の形成が阻害され、前記ステロイド骨格含有化合物存在下、前記結合領域(A)への前記ステロイド骨格含有化合物の接触により、前記立体形成領域(D)が前記立体構造を形成し、前記立体構造の形成時において、前記ステロイド骨格含有化合物は、電解質を含む溶液中に存在し、前記溶液のデバイ長の範囲における前記核酸センサを構成するヌクレオチド残基の数が、前記立体構造の形成の阻害時よりも増加または減少することを特徴とする。
<Steroid skeleton-containing compound detection device>
As described above, the steroid skeleton-containing compound detection device (hereinafter also referred to as “device”) of the present invention includes a steroid skeleton-containing compound detection nucleic acid sensor (hereinafter also referred to as “nucleic acid sensor” or “sensor”). The nucleic acid sensor includes a three-dimensional formation region (D) forming a predetermined three-dimensional structure (hereinafter also referred to as “predetermined structure”) and the steroid skeleton-containing compound (hereinafter also referred to as “steroid compound”). In the absence of the steroid skeleton-containing compound, the steric formation region (D) is inhibited from forming the steric structure, and in the presence of the steroid skeleton-containing compound, the binding By the contact of the steroid skeleton-containing compound with the region (A), the three-dimensional formation region (D) forms the three-dimensional structure, and the three-dimensional structure is formed. The steroid skeleton-containing compound is present in a solution containing an electrolyte, and the number of nucleotide residues constituting the nucleic acid sensor in the Debye length range of the solution is greater than that at the time of inhibiting the formation of the three-dimensional structure. It is characterized by increasing or decreasing.
 前記トランジスタに配置されたセンサは、後述するように、前記ステロイド化合物の存在下、すなわち、前記所定の構造の形成時において、前記デバイ長の範囲におけるセンサを構成するヌクレオチド残基の数(以下、「デバイ長のヌクレオチド数」ともいう)を増加または減少させる。また、前記センサを構成するヌクレオチド残基は、例えば、負の電荷を有する。このため、前記ステロイド化合物存在下において、前記デバイ長の範囲における電荷は、例えば、前記デバイ長のヌクレオチド数の増加または減少に対応するように、前記ステロイド化合物非存在下よりも減少または増加する。したがって、本発明の検出デバイスでは、例えば、前記ステロイド化合物の電荷によらず、前記ステロイド化合物の存在により前記デバイ長の範囲における電荷が、増加または減少するため、電荷をほとんど有さない、または有さない前記ステロイド化合物についても分析可能である。なお、前記センサを構成するヌクレオチド残基は、塩基、糖骨格、およびリン酸基を有することから、前記ヌクレオチド残基の数は、例えば、「塩基の数」、「糖骨格の数」、「リン酸基の数」等ということもできる。 The sensor disposed in the transistor, as will be described later, in the presence of the steroid compound, that is, at the time of forming the predetermined structure, the number of nucleotide residues constituting the sensor in the Debye length range (hereinafter, (Also called “Debye length nucleotide number”). Moreover, the nucleotide residue constituting the sensor has, for example, a negative charge. For this reason, in the presence of the steroid compound, the charge in the Debye length range decreases or increases compared to the absence of the steroid compound, for example, to correspond to an increase or decrease in the number of nucleotides of the Debye length. Therefore, in the detection device of the present invention, for example, the charge in the range of the Debye length increases or decreases due to the presence of the steroid compound regardless of the charge of the steroid compound. It is possible to analyze the steroid compounds that do not. Since the nucleotide residues constituting the sensor have a base, a sugar skeleton, and a phosphate group, the number of nucleotide residues is, for example, “number of bases”, “number of sugar skeletons”, “ It can also be referred to as “the number of phosphate groups”.
 以下、前記各領域を核酸領域ともいう。本発明において、後述する一本鎖型核酸センサは、例えば、一本鎖センサということもでき、二本鎖型核酸センサは、例えば、二本鎖センサということもできる。また、前記立体形成領域(D)について、所定の構造の形成が阻害されることを、スイッチ-OFF(またはturn-OFF)、所定の構造が形成されることを、スイッチ-ON(またはturn-ON)ともいう。 Hereinafter, each region is also referred to as a nucleic acid region. In the present invention, the single-stranded nucleic acid sensor described below can also be referred to as a single-stranded sensor, for example, and the double-stranded nucleic acid sensor can also be referred to as a double-stranded sensor, for example. In addition, regarding the three-dimensional formation region (D), the formation of a predetermined structure is inhibited, the switch-OFF (or turn-OFF), the formation of the predetermined structure is indicated by a switch-ON (or turn- ON).
 前記立体形成領域(D)は、所定の構造を形成する核酸領域である。前記所定の構造は、特に制限されず、例えば、核酸分子が形成する高次構造があげられ、具体的に、二次構造、三次構造、四次構造等があげられる。前記所定の構造の具体例としては、例えば、ステム構造、ヘアピンループ構造、バルジループ構造、G-カルテット構造、i-motif構造、シュードノット構造等があげられる。具体例として、前記立体形成領域(D)は、例えば、G-カルテット構造を形成するG形成領域(G)であり、前記所定の構造は、G-カルテット構造である。前記立体形成領域(D)において形成される前記所定の構造の数は、特に制限されず、例えば、1~10個である。前記立体形成領域(D)の配列は、前記所定の構造を形成する配列であればよい。前記立体形成領域(D)は、例えば、前記ステロイド化合物非存在下、前記所定の構造以外の立体構造(以下、「他の立体構造」ともいう)を形成してもよい。この場合、前記核酸センサは、例えば、前記ステロイド化合物非存在下、前記立体形成領域(D)が、他の立体構造を形成し、前記ステロイド化合物存在下、前記結合領域(A)への前記ステロイド化合物の接触により、前記立体形成領域(D)が、前記所定の立体構造を形成してもよい。前記他の立体構造は、例えば、前記所定の構造とは異なる立体構造である。前記他の立体構造の具体例は、例えば、前記所定の構造の具体例を援用できる。 The three-dimensional formation region (D) is a nucleic acid region that forms a predetermined structure. The predetermined structure is not particularly limited, and examples thereof include higher order structures formed by nucleic acid molecules, and specific examples include secondary structures, tertiary structures, and quaternary structures. Specific examples of the predetermined structure include a stem structure, a hairpin loop structure, a bulge loop structure, a G-quartet structure, an i-motif structure, and a pseudoknot structure. As a specific example, the three-dimensional formation region (D) is, for example, a G formation region (G) that forms a G-quartet structure, and the predetermined structure is a G-quartet structure. The number of the predetermined structures formed in the three-dimensional formation region (D) is not particularly limited, and is, for example, 1 to 10. The array of the three-dimensional formation region (D) may be an array that forms the predetermined structure. The three-dimensional formation region (D) may form, for example, a three-dimensional structure other than the predetermined structure (hereinafter also referred to as “other three-dimensional structure”) in the absence of the steroid compound. In this case, the nucleic acid sensor, for example, in the absence of the steroid compound, the three-dimensional formation region (D) forms another three-dimensional structure, and in the presence of the steroid compound, the steroid to the binding region (A) is formed. The three-dimensional formation region (D) may form the predetermined three-dimensional structure by contact with a compound. The other three-dimensional structure is, for example, a three-dimensional structure different from the predetermined structure. As specific examples of the other three-dimensional structure, for example, specific examples of the predetermined structure can be used.
 前記G-カルテット(「G-tetrad」ともいう)は、一般に、G(グアニン)が四量体となった面の構造として知られている。前記G形成領域(G)は、例えば、複数の塩基Gを有し、その領域内で、複数の塩基GによるG-カルテット構造を形成する領域である。前記G-カルテット構造は、例えば、パラレル型およびアンチパラレル型のいずれでもよく、好ましくは、パラレル型である。本発明のセンサにおいて、前記G形成領域(G)において形成されるG-カルテット構造の個数は、特に制限されず、例えば、1面でも、2面以上の複数でもよいが、前記G形成領域(G)は、G-カルテットが複数面重なった、グアニン四重鎖(またはG-quadruplexともいう)構造を形成することが好ましい。前記G形成領域(G)の配列は、前記G-カルテット構造を形成する配列であればよく、より好ましくは、グアニン四重鎖構造を形成する配列である。 The G-quartet (also referred to as “G-tetrad”) is generally known as a surface structure in which G (guanine) is a tetramer. The G formation region (G) is, for example, a region having a plurality of bases G and forming a G-quartet structure with the plurality of bases G in the region. The G-quartet structure may be, for example, a parallel type or an anti-parallel type, and is preferably a parallel type. In the sensor of the present invention, the number of G-quartet structures formed in the G formation region (G) is not particularly limited, and may be one surface or a plurality of two or more surfaces. G) preferably forms a guanine quadruplex (or G-quadruplex) structure in which multiple G-quartets are stacked. The sequence of the G-forming region (G) may be any sequence that forms the G-quartet structure, and more preferably a sequence that forms a guanine quadruplex structure.
 前記G形成領域(G)の配列は、例えば、前記G-カルテット構造を形成する公知の核酸分子の配列を使用できる。前記公知の核酸分子としては、例えば、下記論文(1)~(4)等の核酸分子が例示できる。
(1)Travascioら, Chem. Biol., 1998年, vol.5, p.505-517
(2)Chengら, Biochemistry, 2009年, vol.48, p.7817-7823
(3)Tellerら, Anal. Chem., 2009年, vol.81, p.9114-9119
(4)Taoら, Anal. Chem., 2009年, vol.81, p.2144-2149
As the sequence of the G-forming region (G), for example, a sequence of a known nucleic acid molecule that forms the G-quartet structure can be used. Examples of the known nucleic acid molecule include nucleic acid molecules such as the following articles (1) to (4).
(1) Travascio et al., Chem. Biol., 1998, vol.5, p.505-517
(2) Cheng et al., Biochemistry, 2009, vol.48, p.7817-7823
(3) Teller et al., Anal. Chem., 2009, vol.81, p.9114-9119
(4) Tao et al., Anal. Chem., 2009, vol.81, p.2144-2149
 前記所定の立体構造がi-motif構造である場合、前記立体形成領域(D)の配列は、例えば、前記i-motif構造を形成する公知の核酸分子の配列を使用できる。前記公知の核酸分子としては、例えば、下記論文(5)等の核酸分子が例示できる。
(5)Patrycja Bielecka et al., “Fluorescent Sensor for PH Monitoring Based on an i-Motif- - Switching Aptamer Containing a Tricyclic Cytosine Analogue (tC)”, 2015, Molecules, vol.20, pp.18511-18525
When the predetermined three-dimensional structure is an i-motif structure, the sequence of the three-dimensional formation region (D) can be, for example, the sequence of a known nucleic acid molecule that forms the i-motif structure. Examples of the known nucleic acid molecule include nucleic acid molecules such as the following paper (5).
(5) Patrycja Bielecka et al., “Fluorescent Sensor for PH Monitoring Based on an i-Motif--Switching Aptamer Containing a Tricyclic Cytosine Analogue (tC)”, 2015, Molecules, vol.20, pp.18511-18525
 前記所定の立体構造がシュードノット構造である場合、前記立体形成領域(D)の配列は、例えば、前記シュードノット構造を形成する公知の核酸分子の配列を使用できる。前記公知の核酸分子としては、例えば、下記論文(6)等の核酸分子が例示できる。
(6)Calliste Reiling et al., “Loop Contributions to the Folding Thermodynamics of DNA Straight Hairpin Loops and Pseudoknots”, 2015, J. Phys. Chem. B, vol.119, pp.1939-1946
When the predetermined three-dimensional structure is a pseudoknot structure, the sequence of the three-dimensional formation region (D) can be, for example, the sequence of a known nucleic acid molecule that forms the pseudoknot structure. Examples of the known nucleic acid molecule include nucleic acid molecules such as the following paper (6).
(6) Calliste Reiling et al., “Loop Contributions to the Folding Thermodynamics of DNA Straight Hairpin Loops and Pseudoknots”, 2015, J. Phys. Chem. B, vol.119, pp.1939-1946
 前記立体形成領域(D)は、例えば、一本鎖型でもよいし、二本鎖型でもよい。前記一本鎖型は、例えば、一本鎖の立体形成領域(D)内で、所定の構造を形成でき、前記二本鎖型は、例えば、第1領域(D1)と第2領域(D2)とからなり、前記第1領域(D1)と前記第2領域(D2)との間で、所定の構造を形成できる。後者の二本鎖型は、例えば、前記第1領域と、前記第2領域とが、間接的に連結された構造があげられ、具体的には、後述する核酸センサ(iv)において説明する。 The solid formation region (D) may be, for example, a single-stranded type or a double-stranded type. The single-stranded type can form a predetermined structure in, for example, a single-stranded three-dimensional formation region (D), and the double-stranded type includes, for example, a first region (D1) and a second region (D2). A predetermined structure can be formed between the first region (D1) and the second region (D2). The latter double-stranded type includes, for example, a structure in which the first region and the second region are indirectly linked, and will be specifically described in the nucleic acid sensor (iv) described later.
 前記一本鎖型の立体形成領域(D)の長さは、特に制限されず、下限は、例えば、11塩基長、13塩基長、15塩基長であり、上限は、例えば、60塩基長、36塩基長、18塩基長である。 The length of the single-stranded solid formation region (D) is not particularly limited, and the lower limit is, for example, 11 base length, 13 base length, 15 base length, and the upper limit is, for example, 60 base length, It is 36 bases long and 18 bases long.
 前記二本鎖型の立体形成領域(D)において、前記第1領域(D1)および前記第2領域(D2)の長さは、特に制限されず、両者は同じであっても異なってもよい。前記第1領域(D1)の長さは、特に制限されず、下限は、例えば、7塩基長、8塩基長、10塩基長であり、上限は、例えば、30塩基長、20塩基長、10塩基長であり、その範囲は、例えば、7~30塩基長、7~20塩基長、7~10塩基長である。前記第2領域(D2)の長さは、特に制限されず、下限は、例えば、7塩基長、8塩基長、10塩基長であり、上限は、例えば、30塩基長、20塩基長、10塩基長であり、その範囲は、例えば、7~30塩基長、7~20塩基長、7~10塩基長である。 In the double-stranded solid formation region (D), the lengths of the first region (D1) and the second region (D2) are not particularly limited, and both may be the same or different. . The length of the first region (D1) is not particularly limited, and the lower limit is, for example, 7 base length, 8 base length, 10 base length, and the upper limit is, for example, 30 base length, 20 base length, 10 The base length is, for example, 7 to 30 bases, 7 to 20 bases, or 7 to 10 bases. The length of the second region (D2) is not particularly limited, and the lower limit is, for example, 7 base length, 8 base length, 10 base length, and the upper limit is, for example, 30 base length, 20 base length, 10 The base length is, for example, 7 to 30 bases, 7 to 20 bases, or 7 to 10 bases.
 本発明において、前記ステロイド化合物は、下記式(1)で表されるステロイド骨格を有する化合物を意味する。具体例として、前記ステロイド骨格含有化合物は、例えば、下記式(2)で表わされるコルチゾール、コレステロール、プロゲステロン、11-デオネシコルチコステロン、コルチコステロン、アルドステロン、コルチゾン、デヒドロエピアンドロステロン、デヒドロエピアンドロステロンサルフェート、ジヒドロテストステロン、アンドロステロン、エピアンドロステロン、テストステロン、17β-エストラジオール、エストロン、エストリオール等があげられる。本発明において、コルチゾールは、例えば、(11β)-17,21-トリヒドロキシプレグナ-4-エン-3,20-ジオンということもでき、CAS登録番号50-23-7で登録されている化学物質および化学式を参照できる。前記ステロイド化合物は、例えば、異性体、塩、水和物、溶媒和物等の誘導体でもよい。以下、前記ステロイド化合物に関する記載は、前記誘導体に援用できる。
Figure JPOXMLDOC01-appb-C000001
Figure JPOXMLDOC01-appb-C000002
In the present invention, the steroid compound means a compound having a steroid skeleton represented by the following formula (1). As a specific example, the steroid skeleton-containing compound includes, for example, cortisol, cholesterol, progesterone, 11-deonecicorticosterone, corticosterone, aldosterone, cortisone, dehydroepiandrosterone, dehydroepiandrosterone represented by the following formula (2): Androsterone sulfate, dihydrotestosterone, androsterone, epiandrosterone, testosterone, 17β-estradiol, estrone, estriol and the like. In the present invention, cortisol can be referred to as, for example, (11β) -17,21-trihydroxypregna-4-ene-3,20-dione, and is a chemical registered under CAS registration number 50-23-7. See material and chemical formula. The steroid compound may be, for example, a derivative such as an isomer, a salt, a hydrate, or a solvate. Hereinafter, the description regarding the said steroid compound can be used for the said derivative | guide_body.
Figure JPOXMLDOC01-appb-C000001
Figure JPOXMLDOC01-appb-C000002
 前記結合領域(A)の長さは、特に制限されず、下限は、例えば、12塩基長、15塩基長、18塩基長であり、上限は、例えば、140塩基長、80塩基長、60塩基長であり、その範囲は、例えば、12~140塩基長、15~80塩基長、18~60塩基長である。 The length of the binding region (A) is not particularly limited, and the lower limit is, for example, 12 base length, 15 base length, 18 base length, and the upper limit is, for example, 140 base length, 80 base length, 60 bases The range is, for example, 12 to 140 bases long, 15 to 80 bases long, 18 to 60 bases long.
 本発明において、ある配列に対して他の配列が相補的であるとは、例えば、両者間でアニーリングが生じ得る配列であることを意味する。前記アニーリングは、例えば、ステム形成ともいう。本発明において、相補的とは、例えば、2種類の配列をアラインメントした際の相補性が、例えば、90%以上、95%以上、96%以上、97%以上、98%以上、99%以上であり、好ましくは100%、すなわち完全相補である。また、核酸センサ内において、ある配列に対して他の配列が相補的であるとは、一方の5’側から3’側に向かう配列と、他方の3’側から5’側に向かう配列とを対比させた際に、互いの塩基が相補的であることを意味する。 In the present invention, the phrase “the other sequence is complementary to a certain sequence” means, for example, a sequence that can be annealed between the two. The annealing is also referred to as stem formation, for example. In the present invention, “complementary” means, for example, that complementarity when two kinds of sequences are aligned is, for example, 90% or more, 95% or more, 96% or more, 97% or more, 98% or more, 99% or more. Yes, preferably 100%, ie fully complementary. In the nucleic acid sensor, the other sequence is complementary to a certain sequence when the sequence is directed from the 5 ′ side to the 3 ′ side, and the sequence is directed from the other 3 ′ side to the 5 ′ side. Means that the bases of each other are complementary.
 本発明において、前記センサは、例えば、下記(I)および(II)のセンサがあげられる。本発明において、前記トランジスタに配置されるセンサは、例えば、1種類でもよいし、2種類以上でもよい。 In the present invention, examples of the sensor include the following sensors (I) and (II). In the present invention, the sensor arranged in the transistor may be, for example, one type or two or more types.
 センサの一例として、前記(I)および(II)のセンサのそれぞれを、以下に説明する。以下のセンサにおいて、前記所定の立体構造は、例えば、G-カルテット構造が好ましい。なお、特に示さない限り、各センサの記載を、それぞれ援用できる。また、下記(I)および(II)のセンサの説明において、「立体構造」は、「所定の立体構造」を意味する。 As an example of the sensor, each of the sensors (I) and (II) will be described below. In the following sensors, the predetermined three-dimensional structure is preferably a G-quartet structure, for example. In addition, unless otherwise indicated, description of each sensor can be used, respectively. In the description of the sensors (I) and (II) below, “three-dimensional structure” means “predetermined three-dimensional structure”.
1.核酸センサ(I)
 前記核酸センサ(I)は、例えば、第1鎖(ss1)と第2鎖(ss2)とから構成される二本鎖型核酸センサであり、
前記第1鎖(ss1)は、前記立体形成領域(D)および前記結合領域(A)をこの順序で有し、
前記第2鎖(ss2)は、ステム形成領域(S)およびステム形成領域(S)をこの順序で有し、
前記ステム形成領域(S)は、前記立体形成領域(D)に対して相補的な配列を有し、
前記ステム形成領域(S)は、前記結合領域(A)に対して相補的な配列を有し、
 前記ステロイド骨格含有化合物非存在下、前記立体形成領域(D)は、前記立体構造の形成が阻害され、且つ前記第2鎖(ss2)とハイブリダイズし、
 前記ステロイド骨格含有化合物存在下、前記第1鎖(ss1)の前記結合領域(A)への前記ステロイド骨格含有化合物の接触により、前記立体形成領域(D)が前記立体構造を形成し、且つ前記第2鎖(ss2)から解離し、
 前記立体構造の形成時において、前記デバイ長の範囲における前記核酸センサを構成するヌクレオチド残基の数が、前記立体構造の形成の阻害時よりも減少する二本鎖型核酸センサである。
1. Nucleic acid sensor (I)
The nucleic acid sensor (I) is, for example, a double-stranded nucleic acid sensor composed of a first strand (ss1) and a second strand (ss2),
The first strand (ss1) has the three-dimensional region (D) and the binding region (A) in this order,
The second strand (ss2) has a stem forming region (S D ) and a stem forming region (S A ) in this order,
The stem forming region (S D ) has a sequence complementary to the three-dimensional forming region (D),
The stem forming region (S A ) has a sequence complementary to the binding region (A),
In the absence of the steroid skeleton-containing compound, the stereogenic region (D) is inhibited from forming the stereostructure and hybridizes with the second chain (ss2),
In the presence of the steroid skeleton-containing compound, the three-dimensional formation region (D) forms the three-dimensional structure by contacting the steroid skeleton-containing compound with the binding region (A) of the first chain (ss1), and Dissociates from the second strand (ss2),
In the formation of the three-dimensional structure, the nucleic acid sensor is a double-stranded nucleic acid sensor in which the number of nucleotide residues constituting the nucleic acid sensor in the Debye length range is smaller than that in the inhibition of the formation of the three-dimensional structure.
 前記核酸センサ(I)において、前記立体形成領域(D)は、例えば、前記一本鎖型である。 In the nucleic acid sensor (I), the three-dimensional formation region (D) is, for example, the single-stranded type.
 図1に示すように、前記センサ(I)は、例えば、以下のようなメカニズムに基づいて、前記ステロイド化合物の存否により、前記立体形成領域(D)の前記立体構造の形成が、ON-OFFに制御され、これにより、前記デバイ長の範囲において、前記センサを構成するヌクレオチド残基の数が減少すると推定される。なお、本発明は、このメカニズムには制限されない。一般的に、核酸配列は、形成し得る構造の間で熱力学的に揺らいでおり、相対的に安定性の高いものの存在比率が高くなると考えられている。そして、アプタマー等の結合核酸分子(結合領域)は、一般的に、前記ステロイド化合物存在下では、前記ステロイド化合物との接触によって、より安定な構造に変化して、前記ステロイド化合物に結合することが知られている。また、G-カルテット構造等の核酸配列の前記立体構造も、一般的に、相対的に安定性の高いものの存在比率が高くなると考えられている。そして、図1(A)に示すように、前記センサ(I)は、前記ステロイド化合物非存在下では、前記第1鎖(ss1)の前記立体形成領域(D)と前記第2鎖(ss2)の前記ステム形成領域(S)とがアニーリングすることで、前記立体形成領域(D)の前記立体構造の形成が阻害される(スイッチ-OFF)。また、前記第1鎖(ss1)の前記結合領域(A)と前記第2鎖(ss2)の前記ステム形成領域(S)とがアニーリングすることで、前記結合領域(A)において、前記ステロイド化合物と結合するためのより安定な構造の形成がブロックされ、前記ステロイド化合物と結合していない状態の構造が維持される。他方、前記センサ(I)は、前記ステロイド化合物存在下では、前記結合領域(A)への前記ステロイド化合物の接触によって、前記結合領域(A)と前記ステム形成領域(S)とのアニーリングが解除され、前記結合領域(A)が、前記安定な構造に変化する。これに伴い、前記立体形成領域(D)と前記ステム形成領域(S)とのアニーリングが解除され、前記立体形成領域(D)の領域内で前記立体構造が形成される(スイッチ-ON)。また、図1(B)に示すように、前記結合領域(A)と前記ステム形成領域(S)とのアニーリング、および前記立体形成領域(D)と前記ステム形成領域(S)とのアニーリングが解除されることで、前記第1鎖(ss1)が、前記第2鎖(ss2)から解離し、この結果、前記第1鎖(ss1)は、前記デバイ長の範囲外へと移動可能となる。このため、前記センサ(I)によれば、前記ステロイド化合物存在下、すなわち、前記立体構造の形成時において、前記デバイ長のヌクレオチド数が、前記ステロイド化合物非存在下、すなわち、前記立体構造の形成の阻害時よりも減少するため、定性または定量等の前記ステロイド化合物の分析が可能となる。なお、図1では、前記第2鎖(ss2)が、前記トランジスタに配置されている例をあげて説明したが、後述するように、前記第1鎖(ss1)が、前記トランジスタに配置されてもよい。 As shown in FIG. 1, the sensor (I) has an ON-OFF structure based on the following mechanism, for example, depending on the presence or absence of the steroid compound, the formation of the three-dimensional structure of the three-dimensional formation region (D). Thus, it is presumed that the number of nucleotide residues constituting the sensor decreases in the Debye length range. Note that the present invention is not limited to this mechanism. In general, nucleic acid sequences are considered to be thermodynamically fluctuating between structures that can be formed, and the abundance ratio of relatively stable ones is considered to be high. In addition, in the presence of the steroid compound, the binding nucleic acid molecule (binding region) such as an aptamer generally changes to a more stable structure by binding with the steroid compound and can bind to the steroid compound. Are known. In addition, the three-dimensional structure of a nucleic acid sequence such as a G-quartet structure is generally considered to have a higher abundance of relatively stable ones. As shown in FIG. 1A, in the absence of the steroid compound, the sensor (I) has the three-dimensional formation region (D) and the second chain (ss2) of the first chain (ss1). said stem forming region and the (S D) is by annealing, formation of the three-dimensional structure of the three-dimensional formation region (D) is the inhibition of (switch -OFF). In addition, the binding region (A) of the first chain (ss1) and the stem formation region (S A ) of the second chain (ss2) are annealed, so that in the binding region (A), the steroid The formation of a more stable structure for binding to the compound is blocked, and the structure in a state not bonded to the steroid compound is maintained. On the other hand, in the presence of the steroid compound, the sensor (I) can anneal the binding region (A) and the stem formation region (S A ) by contacting the steroid compound with the binding region (A). When released, the binding region (A) changes to the stable structure. Accordingly, the annealing of the three-dimensional formation region (D) and the stem formation region (S D ) is released, and the three-dimensional structure is formed in the region of the three-dimensional formation region (D) (switch-ON). . Also, as shown in FIG. 1B, annealing between the binding region (A) and the stem formation region (S A ), and between the three-dimensional formation region (D) and the stem formation region (S D ) When the annealing is released, the first strand (ss1) is dissociated from the second strand (ss2), and as a result, the first strand (ss1) can move out of the Debye length range. It becomes. Therefore, according to the sensor (I), in the presence of the steroid compound, that is, when the three-dimensional structure is formed, the number of nucleotides of the Debye length is in the absence of the steroid compound, that is, the formation of the three-dimensional structure. Therefore, the steroid compound can be analyzed qualitatively or quantitatively. In FIG. 1, the second chain (ss2) is described as being disposed in the transistor. However, as will be described later, the first chain (ss1) is disposed in the transistor. Also good.
 前記センサ(I)は、前述のように、前記第1鎖(ss1)および前記第2鎖(ss2)を含み、前記ステロイド化合物存在下、前記第1鎖(ss1)または前記第2鎖(ss2)が解離し、例えば、前記デバイ長の範囲外へと移動する。このため、前記ステロイド化合物が電荷を有する場合においても、前記ステロイド化合物存在下において、前記デバイ長の範囲における電荷が、解離した前記第1鎖(ss1)または前記第2鎖(ss2)の数に応じて変動する。このため、前記センサ(I)は、例えば、前記ステロイド化合物の電荷の影響が低減されるため、汎用性に優れる。 As described above, the sensor (I) includes the first chain (ss1) and the second chain (ss2), and in the presence of the steroid compound, the first chain (ss1) or the second chain (ss2). ) Dissociates and moves, for example, outside the Debye length range. For this reason, even when the steroid compound has a charge, in the presence of the steroid compound, the charge in the Debye length range is equal to the number of dissociated first chains (ss1) or second chains (ss2). Fluctuate accordingly. For this reason, the sensor (I) is excellent in versatility because, for example, the influence of the charge of the steroid compound is reduced.
 前記ステム形成領域(S)は、例えば、その全部または一部が、前記立体形成領域(D)の一部に対して相補的な配列であることが好ましい。また、前記ステム形成領域(S)は、例えば、その全部または一部が、前記結合領域(A)の一部に対して相補的な配列であることが好ましい。 For example, the stem formation region (S D ) preferably has a sequence that is entirely or partially complementary to a part of the three-dimensional formation region (D). Moreover, it is preferable that the stem forming region (S A ) is, for example, a sequence that is entirely or partially complementary to a part of the binding region (A).
 前記センサ(I)において、前記各領域の順序は、前記立体形成領域(D)と前記ステム形成領域(S)とがアニーリングし、前記結合領域(A)と前記ステム形成領域(S)とがアニーリングする順序であればよい。具体例としては、以下の順序が例示できる。
  (1) ss1  5’- A-D -3’
      ss2  3’- S-SD -5’
  (2) ss1  5’- D-A -3’
      ss2  3’- S-SA -5’
In the sensor (I), the three-dimensional formation region (D) and the stem formation region (S D ) are annealed in the order of the regions, and the binding region (A) and the stem formation region (S A ) are annealed. And the order of annealing. The following order can be illustrated as a specific example.
(1) ss1 5'- AD-3 '
ss2 3'- S A -S D -5 '
(2) ss1 5'- DA-3 '
ss2 3'- S D -S A -5 '
 前記(1)において、前記ステム形成領域(S)は、前記結合領域(A)の3’側領域と相補的であり、前記ステム形成領域(S)は、前記立体形成領域(D)の5’側領域と相補的であることが好ましい。前記(2)において、前記ステム形成領域(S)は、前記立体形成領域(D)の3’側領域と相補的であり、前記ステム形成領域(S)は、前記結合領域(A)の5’側領域と相補的であることが好ましい。 In (1), the stem formation region (S A ) is complementary to the 3′-side region of the binding region (A), and the stem formation region (S D ) is the solid formation region (D). It is preferable to be complementary to the 5 ′ side region. In (2), the stem formation region (S D ) is complementary to the 3′-side region of the three-dimensional formation region (D), and the stem formation region (S A ) is the binding region (A). It is preferable to be complementary to the 5 ′ side region.
 前記センサ(I)は、例えば、前記各領域間が、直接的または間接的に連結してもよい。前記直接的な連結は、例えば、一方の領域の3’末端と他方の領域の5’末端とが直接結合していることを意味し、前記間接的な連結は、例えば、一方の領域の3’末端と他方の領域の5’末端とが、介在リンカー領域を介して結合していることを意味する。前記介在リンカー領域は、例えば、核酸配列でもよいし、非核酸配列でもよく、好ましくは前者である。 The sensor (I) may be connected, for example, directly or indirectly between the regions. The direct connection means that, for example, the 3 ′ end of one region and the 5 ′ end of the other region are directly bonded, and the indirect connection is, for example, 3 of one region. It means that the “end” and the 5 ′ end of the other region are bound via an intervening linker region. The intervening linker region may be, for example, a nucleic acid sequence or a non-nucleic acid sequence, preferably the former.
 前記センサ(I)は、例えば、前記第1鎖(ss1)における前記結合領域(A)と前記立体形成領域(D)との間、および、前記第2鎖(ss2)における前記ステム形成領域(S)と前記ステム形成領域(S)との間に、前記介在リンカー領域を有することが好ましい。前記第1鎖(ss1)における介在リンカー領域(L)と、前記第2鎖(ss2)における介在リンカー領域(L)とは、互いに非相補的な配列であることが好ましい。 The sensor (I) includes, for example, the stem formation region (A) between the binding region (A) and the three-dimensional formation region (D) in the first strand (ss1) and the second strand (ss2). It is preferable to have the intervening linker region between S D ) and the stem formation region (S A ). The intervening linker region (L 1 ) in the first strand (ss1) and the intervening linker region (L 2 ) in the second strand (ss2) are preferably non-complementary sequences.
 具体例として、前記(1)および(2)が、前記第1鎖(ss1)および前記第2鎖(ss2)に前記介在リンカー領域を有する形態について、例えば、以下の順序が例示できる。以下の例示において、前記結合領域(A)と前記立体形成領域(D)とを連結する介在リンカー領域を(L)、前記ステム形成領域(S)と前記ステム形成領域(S)とを連結する介在リンカー領域を(L)で示す。前記センサ(I)は、例えば、介在リンカー領域として、例えば、(L)および(L)の両方を有してもよいし、いずれか一方のみを有してもよい。
  (1’) ss1  5’- A-L-D -3’
       ss2  3’- S-L-SD -5’
  (2’) ss1  5’- D-L-A -3’
       ss2  3’- S-L-SA -5’
As a specific example, for example, the following order can be exemplified for the forms in which (1) and (2) have the intervening linker region in the first chain (ss1) and the second chain (ss2). In the following examples, an intervening linker region that connects the binding region (A) and the three-dimensional formation region (D) is (L 1 ), the stem formation region (S D ), and the stem formation region (S A ) The intervening linker region linking is represented by (L 2 ). The sensor (I) may have, for example, both (L 1 ) and (L 2 ) as an intervening linker region, or may have only one of them.
(1 ') ss1 5'- AL 1 -D -3'
ss2 3'- S A -L 2 -S D -5 '
(2 ') ss1 5'- DL 1 -A -3'
ss2 3'- S D -L 2 -S A -5 '
 前記(1’)および(2’)の形態は、例えば、以下のように、立体構造の形成がON-OFFされる。前記ステロイド化合物非存在下において、例えば、前記結合領域(A)と前記ステム形成領域(S)、前記立体形成領域(D)と前記ステム形成領域(S)が、それぞれステムを形成し、これら2つのステムの間で、前記介在リンカー領域(L)と前記介在リンカー領域(L)が、内部ループを形成して、前記立体形成領域(D)の立体構造の形成を阻害する。そして、前記ステロイド化合物存在下、前記結合領域(A)への前記ステロイド化合物の接触により、それぞれのステム形成が解除され、前記立体形成領域(D)において、前記立体構造が形成される。 In the forms (1 ′) and (2 ′), for example, the formation of a three-dimensional structure is turned on and off as follows. In the absence of the steroid compound, for example, the binding region (A) and the stem formation region (S A ), the three-dimensional formation region (D) and the stem formation region (S D ) each form a stem, Between these two stems, the intervening linker region (L 1 ) and the intervening linker region (L 2 ) form an internal loop to inhibit the formation of the three-dimensional structure of the three-dimensional formation region (D). Then, in the presence of the steroid compound, the formation of each stem is released by the contact of the steroid compound with the binding region (A), and the three-dimensional structure is formed in the three-dimensional formation region (D).
 前記センサ(I)において、前記ステム形成領域(S)および前記ステム形成領域(S)の長さは、特に制限されない。前記ステム形成領域(S)の長さは、例えば、1~60塩基長、1~10塩基長、1~7塩基長である。前記ステム形成領域(S)の長さは、例えば、1~30塩基長、0~10塩基長、1~10塩基長、0~7塩基長、1~7塩基長である。前記ステム形成領域(S)と前記ステム形成領域(S)とは、例えば、同じ長さでもよいし、前者が長くてもよいし、後者が長くてもよい。 In the sensor (I), the lengths of the stem formation region (S A ) and the stem formation region (S D ) are not particularly limited. The length of the stem formation region (S A ) is, for example, 1 to 60 bases long, 1 to 10 bases long, or 1 to 7 bases long. The length of the stem formation region (S D ) is, for example, 1 to 30 bases, 0 to 10 bases, 1 to 10 bases, 0 to 7 bases, or 1 to 7 bases. For example, the stem formation region (S A ) and the stem formation region (S D ) may have the same length, the former may be long, or the latter may be long.
 前記介在リンカー領域(L)および(L)の長さは、特に制限されない。前記介在リンカー領域(L)および(L)の長さは、それぞれ、例えば、0~30塩基長、1~30塩基長、1~15塩基長、1~6塩基長である。また、前記介在リンカー領域(L)および(L)の長さは、例えば、同じでも、異なってもよい。後者の場合、前記介在リンカー領域(L)および(L)の長さの差は、特に制限されず、例えば、1~10塩基長、1または2塩基長、1塩基長である。 The lengths of the intervening linker regions (L 1 ) and (L 2 ) are not particularly limited. The lengths of the intervening linker regions (L 1 ) and (L 2 ) are, for example, 0 to 30 bases, 1 to 30 bases, 1 to 15 bases, and 1 to 6 bases, respectively. The lengths of the intervening linker regions (L 1 ) and (L 2 ) may be the same or different, for example. In the latter case, the difference in length between the intervening linker regions (L 1 ) and (L 2 ) is not particularly limited, and is, for example, 1 to 10 bases long, 1 or 2 bases long, and 1 base long.
 前記センサ(I)において、前記第1鎖(ss1)および前記第2鎖(ss2)の長さは、特に制限されない。前記第1鎖(ss1)の長さは、例えば、40~200塩基長、42~100塩基長、45~60塩基長である。前記第2鎖(ss2)の長さは、例えば、4~120塩基長、5~25塩基長、10~15塩基長である。 In the sensor (I), the lengths of the first strand (ss1) and the second strand (ss2) are not particularly limited. The length of the first strand (ss1) is, for example, 40 to 200 bases long, 42 to 100 bases long, 45 to 60 bases long. The length of the second strand (ss2) is, for example, 4 to 120 bases long, 5 to 25 bases long, or 10 to 15 bases long.
 前記センサ(I)は、例えば、前記第1鎖(ss1)と前記第2鎖(ss2)との間が、直接的または間接的に連結してもよい。前記第1鎖(ss1)と前記第2鎖(ss2)とが連結している場合、前記センサ(I)は、例えば、一本鎖型核酸センサということができ、前記第1鎖(ss1)および前記第2鎖(ss2)は、それぞれ、第1領域および第2領域ということができる。前記直接的な連結は、例えば、一方の領域の3’末端と他方の領域の5’末端とが直接結合していることを意味し、前記間接的な連結は、例えば、一方の領域の3’末端と他方の領域の5’末端とが、介在リンカー領域を介して結合していることを意味し、具体的には、一方の領域の3’末端と前記介在リンカー領域の5’末端とが直接結合し、前記介在リンカー領域の3’末端と他方の領域の5’末端とが直接結合していることを意味する。前記介在リンカー領域は、例えば、核酸配列でもよいし、非核酸配列でもよく、好ましくは前者である。前記介在リンカー領域の長さは、特に制限されず、例えば、1~60塩基長である。 In the sensor (I), for example, the first chain (ss1) and the second chain (ss2) may be directly or indirectly linked. When the first strand (ss1) and the second strand (ss2) are linked, the sensor (I) can be referred to as a single-stranded nucleic acid sensor, for example, and the first strand (ss1) The second strand (ss2) can be referred to as a first region and a second region, respectively. The direct connection means that, for example, the 3 ′ end of one region and the 5 ′ end of the other region are directly bonded, and the indirect connection is, for example, 3 of one region. It means that the 'terminal and the 5' end of the other region are linked via an intervening linker region, specifically, the 3 'end of one region and the 5' end of the intervening linker region Means that the 3 ′ end of the intervening linker region and the 5 ′ end of the other region are directly bound. The intervening linker region may be, for example, a nucleic acid sequence or a non-nucleic acid sequence, preferably the former. The length of the intervening linker region is not particularly limited and is, for example, 1 to 60 bases long.
 前記第1領域、前記第2領域および前記介在リンカー領域の順序は、例えば、前記第1領域、前記介在リンカー領域、および前記第2領域が、5’側からこの順序で連結してもよいし、3’側からこの順序で連結してもよく、好ましくは前者である。 Regarding the order of the first region, the second region, and the intervening linker region, for example, the first region, the intervening linker region, and the second region may be connected in this order from the 5 ′ side. They may be connected in this order from the 3 ′ side, preferably the former.
 前記センサ(I)は、例えば、前記第1鎖(ss1)または前記第2鎖(ss2)の一方の末端が、前記トランジスタに連結されてもよい。 In the sensor (I), for example, one end of the first chain (ss1) or the second chain (ss2) may be connected to the transistor.
 前記センサ(I)は、例えば、前記第1鎖(ss1)および前記第2鎖(ss2)の前記一方の末端または両端に、さらに、リンカー領域が付加されてもよい。前記末端に付加されたリンカー領域を、以下、付加リンカー領域ともいう。前記付加リンカー領域の長さは、特に制限されず、例えば、1~60塩基長である。この場合、前記センサ(I)は、例えば、前記第1鎖(ss1)または前記第2鎖(ss2)の一方の末端が、付加リンカー領域を介して、前記トランジスタに連結されてもよい。 In the sensor (I), for example, a linker region may be further added to the one end or both ends of the first strand (ss1) and the second strand (ss2). Hereinafter, the linker region added to the terminal is also referred to as an additional linker region. The length of the additional linker region is not particularly limited and is, for example, 1 to 60 bases long. In this case, in the sensor (I), for example, one end of the first strand (ss1) or the second strand (ss2) may be connected to the transistor via an additional linker region.
 コルチゾールに結合する前記センサ(I)の具体例として、前記第1鎖(ss1)は、例えば、下記(a)のポリヌクレオチドを含む。また、前記第2鎖(ss2)は、例えば、下記(b)のポリヌクレオチドを含む。 As a specific example of the sensor (I) that binds to cortisol, the first strand (ss1) includes, for example, the following polynucleotide (a). The second strand (ss2) includes, for example, the following polynucleotide (b).
(a)下記(a1)、(a2)、または(a3)のポリヌクレオチド
(a1)配列番号1の塩基配列からなるポリヌクレオチド
(a2)配列番号1の塩基配列において、1もしくは数個の塩基が欠失、置換、挿入および/または付加された塩基配列からなり、前記結合領域(A)に対応する領域がコルチゾールに結合し、前記立体形成領域(D)に対応する領域が前記所定の立体構造を形成するポリヌクレオチド
(a3)配列番号1の塩基配列に対して、80%以上の同一性を有する塩基配列からなり、前記結合領域(A)に対応する領域がコルチゾールに結合し、前記立体形成領域(D)に対応する領域が前記所定の立体構造を形成するポリヌクレオチド
(A) a polynucleotide comprising the base sequence of (a1), (a2) or (a3) below (a1) SEQ ID NO: 1 (a2) in the base sequence of SEQ ID NO: 1, wherein one or several bases are It consists of a base sequence deleted, substituted, inserted and / or added, the region corresponding to the binding region (A) binds to cortisol, and the region corresponding to the stereogenic region (D) is the predetermined three-dimensional structure The polynucleotide (a3) comprising the nucleotide sequence having the identity of 80% or more with respect to the nucleotide sequence of SEQ ID NO: 1, the region corresponding to the binding region (A) binds to cortisol, and the three-dimensional formation A polynucleotide in which a region corresponding to the region (D) forms the predetermined three-dimensional structure
(b)下記(b1)、(b2)、または(b3)のポリヌクレオチド
(b1)配列番号2の塩基配列からなるポリヌクレオチド
(b2)配列番号2の塩基配列において、1もしくは数個の塩基が欠失、置換、挿入および/または付加された塩基配列からなり、前記ステム形成領域(S)に対応する領域が前記(a)のポリヌクレオチドの前記結合領域(A)に結合(アニーリング)し、前記ステム形成領域(S)に対応する領域が前記(a)のポリヌクレオチドの前記立体形成領域(D)に結合(アニーリング)するポリヌクレオチド
(b3)配列番号2の塩基配列に対して、80%以上の同一性を有する塩基配列からなり、前記ステム形成領域(S)に対応する領域が前記(a)のポリヌクレオチドの前記結合領域(A)に結合(アニーリング)し、前記ステム形成領域(S)に対応する領域が前記(a)のポリヌクレオチドの前記立体形成領域(D)に結合(アニーリング)するポリヌクレオチド
(B) a polynucleotide consisting of the base sequence of (b1), (b2), or (b3) below (b1) SEQ ID NO: 2 (b2) in the base sequence of SEQ ID NO: 2, wherein one or several bases deleted, substituted, inserted and / or added in the nucleotide sequence, wherein the system forming area (S a) a region corresponding to the said bound to the binding region (a) of the polynucleotide of (a) (annealing) A region corresponding to the stem-forming region (S D ) with respect to the base sequence of the polynucleotide (b3) SEQ ID NO: 2 that binds (anneals) to the three-dimensional formation region (D) of the polynucleotide of (a), the base sequence having 80% or more identity, coupled to the coupling region of a polynucleotide of the stem forming regions (S a) a region corresponding to said (a) (a) Annealing), and said stem forming regions (coupled to the three-dimensional formation region (D) of the polynucleotide S D) a region corresponding to said (a) (annealing) polynucleotides
 前記(a1)のポリヌクレオチドは、下記配列番号1の塩基配列からなるポリヌクレオチドである。下記配列番号1の塩基配列において、5’末端側の下線で示す塩基配列は、前記立体形成領域(D)に対応し、3’末端側の括弧で囲んだ下線で示す塩基配列は、前記結合領域(A)に対応し、下線のない塩基配列は、前記介在リンカー領域(L)に対応する。
第1鎖(ss1)(配列番号1):5’-GGGTGGGAGGGTCGGGTTT[GCAAGTTCTTCGCTCGTACTTGC]-3’
The polynucleotide (a1) is a polynucleotide having the base sequence of SEQ ID NO: 1 below. In the base sequence of SEQ ID NO: 1, the base sequence indicated by the underline at the 5 ′ end corresponds to the three-dimensional formation region (D), and the base sequence indicated by the underline enclosed in parentheses at the 3 ′ end is the binding The base sequence corresponding to the region (A) and not underlined corresponds to the intervening linker region (L 1 ).
First strand (ss1) (SEQ ID NO: 1): 5'- GGGTGGGAGGGTCGGG TTT [ GCAAGTTCTTCGCTCGTACTTGC ] -3 '
 前記(a2)のポリヌクレオチドにおいて、「1もしくは数個」は、例えば、前記(a2)のポリヌクレオチドが、前記結合領域(A)に対応する領域がコルチゾールに結合し、前記立体形成領域(D)に対応する領域が前記所定の立体構造を形成する範囲であればよい。前記「1もしくは数個」は、前記(a1)の塩基配列において、例えば、1~8個、1~4個、1または2個、1個である。本発明において、塩基数および配列数等の個数の数値範囲は、例えば、その範囲に属する正の整数を全て開示するものである。つまり、例えば、「1~5塩基」との記載は、「1、2、3、4、5塩基」の全ての開示を意味する(以下、同様)。 In the polynucleotide of (a2), “one or several” means, for example, that the polynucleotide of (a2) binds to cortisol in the region corresponding to the binding region (A), and the three-dimensional region (D The region corresponding to) may be a range that forms the predetermined three-dimensional structure. The “1 or several” is, for example, 1 to 8, 1 to 4, 1 or 2, or 1 in the base sequence of (a1). In the present invention, the numerical range of numbers such as the number of bases and the number of sequences, for example, discloses all positive integers belonging to the range. That is, for example, the description “1 to 5 bases” means all disclosures of “1, 2, 3, 4, 5 bases” (the same applies hereinafter).
 前記(a3)のポリヌクレオチドにおいて、「同一性」は、例えば、前記(a3)のポリヌクレオチドが、前記結合領域(A)に対応する領域がコルチゾールに結合し、前記立体形成領域(D)に対応する領域が前記所定の立体構造を形成する範囲であればよい。前記「同一性」は、例えば、80%以上、85%以上、90%以上、95%以上、96%以上、97%以上、98%以上、99%以上である。前記同一性は、例えば、BLAST、FASTA等の解析ソフトウェアを用いて、デフォルトのパラメータにより算出できる(以下、同様)。 In the polynucleotide of (a3), “identity” means, for example, that the polynucleotide of (a3) binds to cortisol in the region corresponding to the binding region (A), and the stereogenic region (D) The corresponding region may be a range that forms the predetermined three-dimensional structure. The “identity” is, for example, 80% or more, 85% or more, 90% or more, 95% or more, 96% or more, 97% or more, 98% or more, 99% or more. The identity can be calculated with default parameters using analysis software such as BLAST and FASTA (hereinafter the same).
 前記(b1)のポリヌクレオチドは、下記配列番号2の塩基配列からなるポリヌクレオチドである。下記配列番号2の塩基配列において、5’末端側の下線で示す塩基配列は、前記ステム形成領域(S)に対応し、3’末端側の括弧で囲んだ下線で示す塩基配列は、前記ステム形成領域(S)に対応し、下線のない塩基配列は、前記介在リンカー領域(L)に対応する。
第2鎖(ss2)(配列番号2):5’-AACTTGCTTT[CCCGACCC]-3’
The polynucleotide (b1) is a polynucleotide having the base sequence of SEQ ID NO: 2 below. In the base sequence of SEQ ID NO: 2 below, the base sequence indicated by the underline at the 5 ′ end corresponds to the stem formation region (S A ), and the base sequence indicated by the underline enclosed in parentheses at the 3 ′ end is The base sequence without underline corresponding to the stem formation region (S D ) corresponds to the intervening linker region (L 2 ).
Second strand (ss2) (SEQ ID NO: 2): 5'- AACTTGC TTT [ CCCGACCC ] -3 '
 前記(b2)のポリヌクレオチドにおいて、「1もしくは数個」は、例えば、前記(b2)のポリヌクレオチドが、前記ステム形成領域(S)に対応する領域が前記(a)のポリヌクレオチドの前記結合領域(A)に結合し、前記ステム形成領域(S)に対応する領域が前記(a)のポリヌクレオチドの前記立体形成領域(D)に結合する範囲であればよい。前記(b2)のポリヌクレオチドは、前記(a)のポリヌクレオチドのいずれかと、前記ステム形成領域(S)および前記ステム形成領域(S)とが、上述のように、結合できればよい。前記「1もしくは数個」は、前記(b1)の塩基配列において、例えば、1~4個、1~3個、1または2個、1個である。 In the polynucleotide of (b2), “one or several” means, for example, that the polynucleotide of (b2) is a region corresponding to the stem forming region (S A ) of the polynucleotide of (a). The region that binds to the binding region (A) and corresponds to the stem forming region (S D ) may be in a range that binds to the three-dimensional forming region (D) of the polynucleotide of (a). The polynucleotide (b2) may be any of the polynucleotides (a), the stem formation region (S A ), and the stem formation region (S D ) as long as they can be combined as described above. The “1 or several” is, for example, 1 to 4, 1 to 3, 1 or 2, or 1 in the base sequence of (b1).
 前記(b3)のポリヌクレオチドにおいて、「同一性」は、例えば、前記(b3)のポリヌクレオチドが、前記ステム形成領域(S)に対応する領域が前記(a)のポリヌクレオチドの前記結合領域(A)に結合し、前記ステム形成領域(S)に対応する領域が前記(a)のポリヌクレオチドの前記立体形成領域(D)に結合する範囲であればよい。前記(b3)のポリヌクレオチドは、前記(a)のポリヌクレオチドのいずれかと、前記ステム形成領域(S)および前記ステム形成領域(S)とが、上述のように、結合できればよい。前記「同一性」は、例えば、80%以上、85%以上、90%以上、95%以上、96%以上、97%以上、98%以上、99%以上である。 In the polynucleotide of (b3), “identity” means, for example, that the polynucleotide of (b3) is a region corresponding to the stem-forming region (S A ), and the binding region of the polynucleotide of (a) The region that binds to (A) and corresponds to the stem forming region (S D ) may be in a range that binds to the three-dimensional forming region (D) of the polynucleotide of (a). The polynucleotide (b3) may be any one of the polynucleotides (a), the stem formation region (S A ), and the stem formation region (S D ) as long as they can be combined as described above. The “identity” is, for example, 80% or more, 85% or more, 90% or more, 95% or more, 96% or more, 97% or more, 98% or more, 99% or more.
 前記センサ(I)において、前記第1鎖(ss1)および前記第2鎖(ss2)の一方が、前記トランジスタに配置され、他方の鎖を試薬として含んでもよい。この場合、前記トランジスタに配置される鎖は、好ましくは、前記第2鎖(ss2)であり、前記試薬として含む鎖は、好ましくは、前記第1鎖(ss1)である。 In the sensor (I), one of the first chain (ss1) and the second chain (ss2) may be disposed in the transistor, and the other chain may be included as a reagent. In this case, the chain disposed in the transistor is preferably the second chain (ss2), and the chain included as the reagent is preferably the first chain (ss1).
 前記センサ(I)において、前記第1鎖(ss1)および前記第2鎖(ss2)の一方が、前記トランジスタに配置され、他方の鎖を試薬として含む場合、前記センサ(I)は、例えば、前記試薬の存在下、以下のようなメカニズムに基づいて、前記ステロイド化合物の存否により、前記立体形成領域(D)の立体構造の形成が、ON-OFFに制御され、これにより、前記デバイ長の範囲において、前記センサを構成するヌクレオチド残基の数が減少すると推定される。なお、一例として、前記第2鎖(ss2)が前記トランジスタに配置される場合を例にあげて説明するが、本発明は、このメカニズムには制限されない。前記センサ(I)において、前記ステロイド化合物非存在下では、前記結合領域(A)は、前記ステロイド化合物と結合するためのより安定な構造を形成せず、また、前記ステム形成領域(S)が、前記結合領域(A)に対してアニーリングすることで、前記結合領域(A)において前記安定な構造の形成がブロックされ、前記ステロイド化合物と結合していない状態の構造が維持される。また、これに伴い、前記立体形成領域(D)の前記立体構造の形成が阻害され(スイッチ-OFF)、前記ステム形成領域(S)が、前記立体形成領域(D)に対してアニーリングする。このため、前記センサ(I)において、前記ステロイド化合物非存在下では、前記第1鎖(ss1)と前記第2鎖(ss2)とが、ハイブリダイズする。他方、前記センサ(I)は、前記ステロイド化合物存在下では、前記結合領域(A)への前記ステロイド化合物の接触によって、前記結合領域(A)が、前記安定な構造に変化し、前記ステム形成領域(S)が、前記結合領域(A)に対してアニーリングしない。また、これに伴い、前記ステム形成領域(S)が、前記立体形成領域(D)に対してアニーリングせず、前記立体形成領域(D)の領域内で前記立体構造が形成される(スイッチ-ON)。そして、前記結合領域(A)と前記ステム形成領域(S)とのアニーリング、および前記立体形成領域(D)と前記ステム形成領域(S)とのアニーリングが形成されないことで、前記第1鎖(ss1)が、前記第2鎖(ss2)にハイブリダイズせず、前記第1鎖(ss1)は、前記デバイ長の範囲外へと移動可能となる。このため、前記センサ(I)によれば、前記ステロイド化合物存在下、すなわち、前記立体構造の形成時において、前記デバイ長のヌクレオチド数が、前記ステロイド化合物非存在下、すなわち、前記立体構造の形成の阻害時よりも減少するため、定性または定量等の前記ステロイド化合物の分析が可能となる。なお、前記第2鎖(ss2)が、前記トランジスタに配置されている例をあげて説明したが、前記第1鎖(ss1)が、前記トランジスタに配置されてもよい。 In the sensor (I), when one of the first chain (ss1) and the second chain (ss2) is arranged in the transistor and includes the other chain as a reagent, the sensor (I) is, for example, In the presence of the reagent, based on the following mechanism, the formation of the three-dimensional structure of the three-dimensional formation region (D) is controlled to ON-OFF depending on the presence or absence of the steroid compound. In range, it is estimated that the number of nucleotide residues constituting the sensor will decrease. As an example, the case where the second chain (ss2) is arranged in the transistor will be described as an example. However, the present invention is not limited to this mechanism. In the sensor (I), in the absence of the steroid compound, the binding region (A) does not form a more stable structure for binding to the steroid compound, and the stem-forming region (S A ) However, by annealing to the binding region (A), the formation of the stable structure is blocked in the binding region (A), and the structure that is not bound to the steroid compound is maintained. Accordingly, the formation of the three-dimensional structure of the three-dimensional formation region (D) is inhibited (switch-OFF), and the stem formation region (S D ) anneals to the three-dimensional formation region (D). . For this reason, in the sensor (I), in the absence of the steroid compound, the first strand (ss1) and the second strand (ss2) are hybridized. On the other hand, in the presence of the steroid compound, the sensor (I) changes the binding region (A) into the stable structure by the contact of the steroid compound with the binding region (A), thereby forming the stem formation. The region (S A ) does not anneal to the binding region (A). Accordingly, the stem formation region (S D ) does not anneal to the solid formation region (D), and the solid structure is formed in the region of the solid formation region (D) (switch -ON). Then, the annealing between the bonding region (A) and the stem formation region (S A ) and the annealing between the three-dimensional formation region (D) and the stem formation region (S D ) are not formed, so that the first The strand (ss1) does not hybridize to the second strand (ss2), and the first strand (ss1) can move out of the Debye length range. Therefore, according to the sensor (I), in the presence of the steroid compound, that is, when the three-dimensional structure is formed, the number of nucleotides of the Debye length is in the absence of the steroid compound, that is, the formation of the three-dimensional structure. Therefore, the steroid compound can be analyzed qualitatively or quantitatively. In addition, although the second chain (ss2) has been described as an example arranged in the transistor, the first chain (ss1) may be arranged in the transistor.
2.核酸センサ(II)
 前記核酸センサ(II)は、例えば、前記立体形成領域(D)および前記結合領域(A)を有する一本鎖型核酸センサであり、
 前記ステロイド含有化合物非存在下、前記立体形成領域(D)は、前記立体構造の形成が阻害され、
 前記ステロイド含有化合物存在下、前記結合領域(A)への前記ステロイド含有化合物の接触により、前記立体形成領域(D)が前記立体構造を形成し、
 前記立体構造の形成時において、前記デバイ長の範囲における前記核酸センサを構成するヌクレオチド残基の数が、前記立体構造の形成の阻害時よりも増加する一本鎖型核酸センサである。
2. Nucleic acid sensor (II)
The nucleic acid sensor (II) is, for example, a single-stranded nucleic acid sensor having the three-dimensional formation region (D) and the binding region (A),
In the absence of the steroid-containing compound, the stereogenic region (D) is inhibited from forming the stereostructure,
In the presence of the steroid-containing compound, by the contact of the steroid-containing compound with the binding region (A), the three-dimensional formation region (D) forms the three-dimensional structure,
The single-stranded nucleic acid sensor in which the number of nucleotide residues constituting the nucleic acid sensor in the Debye length range is greater than that in the inhibition of the formation of the three-dimensional structure when the three-dimensional structure is formed.
 図2に示すように、前記センサ(II)は、例えば、以下のようなメカニズムに基づいて、前記ステロイド化合物の存否により、前記立体形成領域(D)の立体構造の形成が、ON-OFFに制御され、これにより、前記デバイ長の範囲において、前記センサを構成するヌクレオチド残基の数が増加すると推定される。なお、本発明は、このメカニズムには制限されない。図2(A)に示すように、前記センサ(II)は、前記ステロイド化合物非存在下では、前記分子内で、前記立体形成領域(D)の立体構造の形成が阻害される(スイッチ-OFF)。他方、前記センサ(II)は、前記ステロイド化合物存在下では、前記結合領域(A)への前記ステロイド化合物の接触によって、前記結合領域(A)が、前記ステロイド化合物と結合するためのより安定な構造に変化する。これに伴い、前記立体形成領域(D)の領域内で前記立体構造が形成される(スイッチ-ON)。また、図2(B)に示すように、前記結合領域(A)が、前記安定な立体構造に変化し、また、前記立体形成領域(D)が立体構造を形成することにより、前記センサ(II)が、例えば、前記トランジスタ側に収縮する。このため、前記センサ(II)によれば、前記ステロイド化合物存在下、すなわち、前記立体構造の形成時において、前記デバイ長のヌクレオチド数が、前記ステロイド化合物非存在下、すなわち、前記立体構造の形成の阻害時よりも増加するため、定性または定量等の前記ステロイド化合物の分析が可能となる。 As shown in FIG. 2, the sensor (II) can be turned on and off by the three-dimensional structure of the three-dimensional formation region (D) depending on the presence or absence of the steroid compound based on the following mechanism, for example. It is presumed that the number of nucleotide residues constituting the sensor increases in the range of the Debye length. Note that the present invention is not limited to this mechanism. As shown in FIG. 2A, in the sensor (II), in the absence of the steroid compound, formation of the three-dimensional structure of the three-dimensional formation region (D) is inhibited in the molecule (switch-OFF ). On the other hand, in the presence of the steroid compound, the sensor (II) is more stable for the binding region (A) to bind to the steroid compound by the contact of the steroid compound with the binding region (A). Change to structure. Along with this, the three-dimensional structure is formed in the region of the three-dimensional formation region (D) (switch-ON). Further, as shown in FIG. 2B, the binding region (A) changes to the stable three-dimensional structure, and the three-dimensional formation region (D) forms a three-dimensional structure, whereby the sensor ( II) shrinks to the transistor side, for example. Therefore, according to the sensor (II), in the presence of the steroid compound, that is, when the three-dimensional structure is formed, the number of nucleotides of the Debye length is in the absence of the steroid compound, that is, the formation of the three-dimensional structure. Therefore, the steroid compound can be analyzed qualitatively or quantitatively.
 具体的に、前記センサ(II)は、例えば、下記(i)~(iv)および(v)からなる群から選択された少なくとも1つのセンサである。前記センサ(II)は、例えば、1種類のセンサを含んでもよいし、2種類以上のセンサを含んでもよい。 Specifically, the sensor (II) is, for example, at least one sensor selected from the group consisting of the following (i) to (iv) and (v). The sensor (II) may include, for example, one type of sensor or may include two or more types of sensors.
2-1.核酸センサ(i)
 前記センサ(i)は、例えば、前記立体形成領域(D)、ブロッキング領域(B)、および前記結合領域(A)をこの順序で有し、
前記ブロッキング領域(B)が、前記立体形成領域(D)における部分領域(Dp)に対して相補的であり、
前記結合領域(A)における前記ブロッキング領域(B)側の末端領域(Ab)が、前記立体形成領域(D)における前記部分領域(Dp)の隣接領域(Df)に相補的であり、且つ、前記結合領域(A)における前記ブロッキング領域(B)側とは反対側の末端領域(Af)に相補的である一本鎖型核酸センサである。
2-1. Nucleic acid sensor (i)
The sensor (i) has, for example, the three-dimensional formation region (D), the blocking region (B), and the binding region (A) in this order,
The blocking region (B) is complementary to a partial region (Dp) in the three-dimensional region (D);
A terminal region (Ab) on the blocking region (B) side in the binding region (A) is complementary to a region (Df) adjacent to the partial region (Dp) in the three-dimensional formation region (D), and In the binding region (A), the single-stranded nucleic acid sensor is complementary to a terminal region (Af) opposite to the blocking region (B).
 前記センサ(i)において、前記立体形成領域(D)は、例えば、前記一本鎖型である。 In the sensor (i), the solid formation region (D) is, for example, the single-stranded type.
 前記センサ(i)は、例えば、以下のようなメカニズムに基づいて、前記ステロイド化合物の存否により、前記立体形成領域(D)の立体構造の形成が、ON-OFFに制御され、これにより、前記デバイ長の範囲において、前記センサを構成するヌクレオチド残基の数が増加すると推定される。前記センサ(i)において、前記立体形成領域(D)の部分領域(Dp)が、前記ブロッキング領域(B)と相補的であり、且つ、前記立体形成領域(D)における隣接領域(Df)が、前記結合領域(A)の前記末端領域(Ab)と相補的であるため、これらの相補関係において、ステム形成が可能である。このため、前記ステロイド化合物の非存在下では、前記立体形成領域(D)の部分領域(Dp)と前記ブロッキング領域(B)とのステム形成および前記立体形成領域(D)の隣接領域(Df)と前記結合領域(A)の前記末端領域(Ab)とのステム形成が生じる。前者のステム形成により、前記立体形成領域(D)の前記立体構造の形成が阻害され(スイッチ-OFF)、後者のステム形成により、前記結合領域(A)において、前記ステロイド化合物と結合するためのより安定な構造の形成がブロックされ、前記ステロイド化合物と結合していない状態の構造が維持される。他方、前記ステロイド化合物の存在下では、前記結合領域(A)への前記ステロイド化合物の接触により、前記結合領域(A)が、前記安定な構造に変化する。これに伴い、前記結合領域(A)におけるステム形成が解除され、前記安定な構造に変化した前記結合領域(A)に、前記ステロイド化合物が結合する。そして、前記結合領域(A)におけるステム形成の解除に伴う前記結合領域(A)の前記構造変化により、前記立体形成領域(D)のステム形成も解除され、前記立体形成領域(D)がより安定な構造に変化し、結果的に、前記立体形成領域(D)の領域内で立体構造が形成される(スイッチ-ON)。また、前記結合領域(A)が、前記安定な構造に変化し、且つ、前記立体形成領域(D)が前記立体構造を形成することにより、前記センサ(i)が、例えば、前記トランジスタ側に収縮する。このため、前記センサ(i)によれば、前記ステロイド化合物存在下、すなわち、前記立体構造の形成時において、前記デバイ長のヌクレオチド数が、前記ステロイド化合物非存在下、すなわち、前記立体構造の形成の阻害時よりも増加するため、定性または定量等の前記ステロイド化合物の分析が可能となる。 In the sensor (i), for example, based on the following mechanism, the formation of the three-dimensional structure of the three-dimensional formation region (D) is controlled to ON-OFF depending on the presence or absence of the steroid compound. In the Debye length range, the number of nucleotide residues constituting the sensor is estimated to increase. In the sensor (i), a partial region (Dp) of the three-dimensional formation region (D) is complementary to the blocking region (B), and an adjacent region (Df) in the three-dimensional formation region (D) is Since it is complementary to the terminal region (Ab) of the binding region (A), stem formation is possible in these complementary relationships. Therefore, in the absence of the steroid compound, stem formation between the partial region (Dp) of the stereogenic region (D) and the blocking region (B) and the adjacent region (Df) of the stereogenic region (D) And stem formation of the terminal region (Ab) of the binding region (A) occurs. The former stem formation inhibits the formation of the three-dimensional structure of the three-dimensional formation region (D) (switch-OFF), and the latter stem formation causes the binding region (A) to bind to the steroid compound. The formation of a more stable structure is blocked, and the structure that is not bonded to the steroid compound is maintained. On the other hand, in the presence of the steroid compound, the binding region (A) changes to the stable structure by the contact of the steroid compound with the binding region (A). Along with this, stem formation in the binding region (A) is released, and the steroid compound binds to the binding region (A) changed to the stable structure. Then, due to the structural change of the coupling region (A) accompanying the cancellation of the stem formation in the coupling region (A), the stem formation of the three-dimensional formation region (D) is also released, and the three-dimensional formation region (D) becomes more The structure changes to a stable structure, and as a result, a three-dimensional structure is formed in the region of the three-dimensional formation region (D) (switch-ON). In addition, when the binding region (A) changes to the stable structure and the three-dimensional formation region (D) forms the three-dimensional structure, the sensor (i) is, for example, on the transistor side. Shrink. Therefore, according to the sensor (i), in the presence of the steroid compound, that is, when the three-dimensional structure is formed, the number of nucleotides of the Debye length is in the absence of the steroid compound, that is, the formation of the three-dimensional structure. Therefore, the steroid compound can be analyzed qualitatively or quantitatively.
 前記センサ(i)は、さらに、安定化領域(S)を有してもよく、この場合、前記立体形成領域(D)、前記ブロッキング領域(B)、前記結合領域(A)、および前記安定化領域(S)が、この順序で連結されていることが好ましい。以下、前記センサ(i)として、前記安定化領域(S)を有する一本鎖型核酸センサの形態を示す場合、前記安定化領域(S)は、任意であり、含まない形態でもよい。 The sensor (i) may further have a stabilization region (S). In this case, the solid formation region (D), the blocking region (B), the binding region (A), and the stabilization region (S). The conversion regions (S) are preferably connected in this order. Hereinafter, when the form of the single-stranded nucleic acid sensor having the stabilization region (S) is shown as the sensor (i), the stabilization region (S) is optional and may not be included.
 前記安定化領域(S)は、例えば、前記結合領域(A)が前記ステロイド化合物と結合する際の構造を安定化するための配列である。前記安定化領域(S)は、例えば、前記ブロッキング領域(B)に相補的またはその一部に相補的であり、具体的には、前記ブロッキング領域(B)における前記結合領域(A)側の末端領域(Ba)に相補的であることが好ましい。この場合、例えば、前記ステロイド化合物存在下、前記結合領域(A)の前記安定な構造が形成された際、前記結合領域(A)に連結する前記安定化領域(S)と、前記結合領域(A)に連結する前記ブロッキング領域(B)の末端領域(Ba)との間でも、ステムが形成される。前記結合領域(A)に連結する領域において、このようなステムが形成されることによって、前記ステロイド化合物と結合する前記結合領域(A)の前記安定な構造が、より安定化される。 The stabilization region (S) is, for example, a sequence for stabilizing the structure when the binding region (A) binds to the steroid compound. The stabilization region (S) is, for example, complementary to the blocking region (B) or complementary to a part thereof, specifically, on the binding region (A) side in the blocking region (B). It is preferably complementary to the terminal region (Ba). In this case, for example, when the stable structure of the binding region (A) is formed in the presence of the steroid compound, the stabilization region (S) connected to the binding region (A) and the binding region ( A stem is also formed between the blocking region (B) and the terminal region (Ba) connected to A). By forming such a stem in the region connected to the binding region (A), the stable structure of the binding region (A) that binds to the steroid compound is further stabilized.
 前記センサ(i)において、前記立体形成領域(D)、前記ブロッキング領域(B)、および前記結合領域(A)、ならびに任意の前記安定化領域(S)の順序は、特に制限されず、例えば、5’側からこの順序で連結してもよいし、3’側からこの順序で連結してもよく、好ましくは前者である。 In the sensor (i), the order of the three-dimensional formation region (D), the blocking region (B), the binding region (A), and the optional stabilization region (S) is not particularly limited. They may be connected in this order from the 5 ′ side, or may be connected in this order from the 3 ′ side, preferably the former.
 前記センサ(i)において、前記立体形成領域(D)、前記ブロッキング領域(B)、および前記結合領域(A)、ならびに任意で前記安定化領域(S)は、例えば、それぞれの間が、スペーサー配列が介在することにより間接的に連結してもよいが、前記スペーサー配列が介在することなく直接的に連結していることが好ましい。 In the sensor (i), the three-dimensional formation region (D), the blocking region (B), and the binding region (A), and optionally the stabilization region (S), for example, are each a spacer. Although it may be indirectly linked by the intervening sequence, it is preferably directly linked without the spacer sequence.
 前記立体形成領域(D)は、前述のように、前記ブロッキング領域(B)に相補的な配列を有し、且つ、前記結合領域(A)の一部にも相補的な配列を有する。また、前記ブロッキング領域(B)は、前述のように、前記立体形成領域(D)の一部と相補的であり、また、前記安定化領域(S)を有する場合は、前記安定化領域(S)にも相補的である。 As described above, the three-dimensional formation region (D) has a sequence complementary to the blocking region (B), and also has a sequence complementary to a part of the binding region (A). In addition, as described above, the blocking region (B) is complementary to a part of the three-dimensional formation region (D), and when having the stabilization region (S), the stabilization region ( It is also complementary to S).
 前記ブロッキング領域(B)の配列および長さは、特に制限されず、例えば、前記立体形成領域(D)の配列および長さ等に応じて、適宜設定できる。 The arrangement and length of the blocking region (B) are not particularly limited, and can be appropriately set according to, for example, the arrangement and length of the three-dimensional formation region (D).
 前記ブロッキング領域(B)の長さは、特に制限されず、下限は、例えば、1塩基長、2塩基長、3塩基長であり、上限は、例えば、20塩基長、15塩基長、10塩基長であり、その範囲は、例えば、1~20塩基長、2~15塩基長、3~10塩基長である。 The length of the blocking region (B) is not particularly limited, and the lower limit is, for example, 1 base length, 2 base lengths, 3 base lengths, and the upper limit is, for example, 20 base lengths, 15 base lengths, 10 bases The range is, for example, 1 to 20 bases long, 2 to 15 bases long, and 3 to 10 bases long.
 これに対して、前記立体形成領域(D)の前記部分領域(Dp)の長さは、特に制限されず、下限は、例えば、1塩基長、2塩基長、3塩基長であり、上限は、例えば、20塩基長、15塩基長、10塩基長であり、その範囲は、例えば、1~20塩基長、2~15塩基長、3~10塩基長である。前記ブロッキング領域(B)の長さと前記立体形成領域(D)の前記部分領域(Dp)の長さは、例えば、同じであることが好ましい。 On the other hand, the length of the partial region (Dp) of the three-dimensional formation region (D) is not particularly limited, and the lower limit is, for example, 1 base length, 2 base lengths, 3 base lengths, and the upper limit is For example, the length is 20 base length, 15 base length, 10 base length, and the range is, for example, 1-20 base length, 2-15 base length, 3-10 base length. For example, the length of the blocking region (B) and the length of the partial region (Dp) of the three-dimensional formation region (D) are preferably the same.
 前記センサ(i)において、前記立体形成領域(D)における前記部分領域(Dp)の位置、すなわち、前記立体形成領域(D)における前記ブロッキング領域(B)のアニール領域は、特に制限されない。前記立体形成領域(D)、前記ブロッキング領域(B)、および前記結合領域(A)、ならびに任意で前記安定化領域(S)が、この順序で連結している場合、前記部分領域(Dp)は、例えば、以下の条件で設定できる。 In the sensor (i), the position of the partial region (Dp) in the solid formation region (D), that is, the annealing region of the blocking region (B) in the solid formation region (D) is not particularly limited. When the three-dimensional formation region (D), the blocking region (B), the binding region (A), and optionally the stabilization region (S) are connected in this order, the partial region (Dp) Can be set under the following conditions, for example.
 前記立体形成領域(D)における前記部分領域(Dp)の隣接領域であって、前記部分領域(Dp)のブロッキング領域(B)側末端と前記ブロッキング領域(B)における前記立体形成領域(D)側末端との間の領域(Db)の長さの下限は、例えば、3塩基長、4塩基長、5塩基長であり、その上限は、例えば、40塩基長、30塩基長、20塩基長であり、その範囲は、例えば、3~40塩基長、4~30塩基長、5~20塩基長である。 The three-dimensional formation region (D) is a region adjacent to the partial region (Dp), which is the blocking region (B) side end of the partial region (Dp) and the three-dimensional formation region (D) in the blocking region (B). The lower limit of the length of the region (Db) between the side ends is, for example, 3 base length, 4 base length, 5 base length, and the upper limit is, for example, 40 base length, 30 base length, 20 base length. The range is, for example, 3 to 40 bases long, 4 to 30 bases long, and 5 to 20 bases long.
 前記立体形成領域(D)における前記部分領域(Dp)の隣接領域であって、前記ブロッキング領域(B)側とは反対側の領域(Df)の長さの下限は、例えば、0塩基長、1塩基長、2塩基長であり、その上限は、例えば、40塩基長、30塩基長、20塩基長であり、その範囲は、例えば、0~40塩基長、1~30塩基長、2~20塩基長である。 The lower limit of the length of the region (Df) adjacent to the partial region (Dp) in the three-dimensional region (D) and opposite to the blocking region (B) side is, for example, 0 base length, The upper limit is, for example, 40 base length, 30 base length, 20 base length, and the range is, for example, 0-40 base length, 1-30 base length, It is 20 bases long.
 前記結合領域(A)における前記ブロッキング領域(B)側の末端領域(Ab)は、前述のように、前記立体形成領域(D)の隣接領域(Df)に相補的である。ここで、前記結合領域(A)の末端領域(Ab)は、前記立体形成領域(D)の隣接領域(Df)の全領域に対して相補的でもよいし、前記隣接領域(Df)の部分領域に対して相補的でもよい。後者の場合、前記結合領域(A)の末端領域(Ab)は、前記隣接領域(Df)における、前記立体形成領域(D)の部分領域(Dp)側の末端領域に対して相補的であることが好ましい。 The terminal region (Ab) on the blocking region (B) side in the binding region (A) is complementary to the adjacent region (Df) of the three-dimensional formation region (D) as described above. Here, the terminal region (Ab) of the binding region (A) may be complementary to the entire region of the adjacent region (Df) of the three-dimensional region (D), or a portion of the adjacent region (Df) It may be complementary to the region. In the latter case, the terminal region (Ab) of the binding region (A) is complementary to the terminal region on the partial region (Dp) side of the three-dimensional formation region (D) in the adjacent region (Df). It is preferable.
 前記立体形成領域(D)の隣接領域(Df)に相補的な、前記結合領域(A)における末端領域(Ab)の長さは、特に制限されず、下限は、例えば、1塩基長であり、上限は、例えば、20塩基長、8塩基長、3塩基長であり、その範囲は、例えば、1~20塩基長、1~8塩基長、1~3塩基長である。 The length of the terminal region (Ab) in the binding region (A) complementary to the adjacent region (Df) of the three-dimensional region (D) is not particularly limited, and the lower limit is, for example, one base length The upper limit is, for example, 20 base length, 8 base length, 3 base length, and the range is, for example, 1-20 base length, 1-8 base length, 1-3 base length.
 前記安定化領域(S)は、前述のように、例えば、ブロッキング領域(B)に相補的またはその一部に相補的であり、具体的には、前記ブロッキング領域(B)における前記結合領域(A)側の末端領域(Ba)に相補的であることが好ましい。 As described above, the stabilization region (S) is, for example, complementary to the blocking region (B) or complementary to a part thereof, and specifically, the binding region (B) in the blocking region (B). It is preferably complementary to the terminal region (Ba) on the A) side.
 前記安定化領域(S)の配列および長さは、特に制限されず、例えば、前記ブロッキング領域(B)の配列および長さ、前記結合領域(A)の配列および長さ等に応じて適宜決定できる。前記安定化領域(S)の長さの下限は、例えば、0塩基長、1塩基長であり、その上限は、例えば、10塩基長、5塩基長、3塩基長であり、その範囲は、例えば、0~10塩基長、1~5塩基長、1~3塩基長である。これに対して、例えば、前記安定化領域(S)が前記ブロッキング領域(B)の全体と相補的な場合、前記ブロッキング領域(B)は、前記安定化領域(S)と同じ長さであり、例えば、前記安定化領域(S)が前記ブロッキング領域(B)の一部と相補的な場合、前記ブロッキング領域(B)の一部、例えば、前記末端領域(Ba)は、前記安定化領域(S)と同じ長さである。 The sequence and length of the stabilization region (S) are not particularly limited, and are appropriately determined according to, for example, the sequence and length of the blocking region (B), the sequence and length of the binding region (A), and the like. it can. The lower limit of the length of the stabilization region (S) is, for example, 0 base length and 1 base length, and the upper limit is, for example, 10 base length, 5 base length, 3 base length, and the range is For example, the length is 0 to 10 bases, 1 to 5 bases, or 1 to 3 bases. On the other hand, for example, when the stabilization region (S) is complementary to the entire blocking region (B), the blocking region (B) has the same length as the stabilization region (S). For example, when the stabilization region (S) is complementary to a part of the blocking region (B), a part of the blocking region (B), for example, the terminal region (Ba) It is the same length as (S).
 前記センサ(i)の全長の長さは、特に制限されず、下限は、例えば、25塩基長、35塩基長、40塩基長であり、上限は、例えば、200塩基長、120塩基長、80塩基長であり、その範囲は、例えば、25~200塩基長、35~120塩基長、40~80塩基長である。 The total length of the sensor (i) is not particularly limited, and the lower limit is, for example, 25 base length, 35 base length, 40 base length, and the upper limit is, for example, 200 base length, 120 base length, 80 The base length is, for example, 25 to 200 bases, 35 to 120 bases, 40 to 80 bases.
 前記センサ(i)は、例えば、一方の末端が、前記トランジスタに連結されてもよい。 For example, one end of the sensor (i) may be connected to the transistor.
 前記核酸センサ(i)は、例えば、一方の末端または両端に、さらに、前記付加リンカー領域が付加されてもよい。前記付加リンカー領域の長さは、特に制限されず、例えば、前述の説明を援用できる。この場合、前記センサ(i)は、例えば、一方の末端が、前記付加リンカー領域を介して、前記トランジスタに連結されてもよい。 In the nucleic acid sensor (i), for example, the additional linker region may be further added to one end or both ends. The length of the additional linker region is not particularly limited, and for example, the above description can be used. In this case, for example, one end of the sensor (i) may be connected to the transistor via the additional linker region.
2-2.核酸センサ(ii)
 前記センサ(ii)は、例えば、前記立体形成領域(D)、ブロッキング領域(B)、前記結合領域(A)、および安定化領域(S)をこの順序で有し、
前記ブロッキング領域(B)が、前記立体形成領域(D)の部分領域(Dp)に対して相補的であり、
前記ブロッキング領域(B)の前記結合領域(A)側の末端領域(Ba)が、前記安定化領域(S)に対して相補的である一本鎖型核酸センサである。
2-2. Nucleic acid sensor (ii)
The sensor (ii) has, for example, the three-dimensional formation region (D), the blocking region (B), the binding region (A), and the stabilization region (S) in this order,
The blocking region (B) is complementary to a partial region (Dp) of the three-dimensional formation region (D);
The terminal region (Ba) on the binding region (A) side of the blocking region (B) is a single-stranded nucleic acid sensor that is complementary to the stabilization region (S).
 前記センサ(ii)において、前記立体形成領域(D)は、例えば、前記一本鎖型である。 In the sensor (ii), the three-dimensional formation region (D) is, for example, the single-stranded type.
 前記センサ(ii)において、前記結合領域(A)は、それ単独では、前記ステロイド化合物との結合に必要な分子内アニーリングが形成されない配列であることが好ましい。そして、前記センサ(ii)は、前記ステロイド化合物存在下、前記結合領域(A)に隣接する前記ブロッキング領域(B)の末端領域(Ba)と前記安定化領域(S)とのアニーリングによって、前記結合領域(A)と前記末端領域(Ba)と前記安定化領域(S)との全体から、前記ステロイド化合物と結合するための安定な構造が形成されることが好ましい。 In the sensor (ii), the binding region (A) is preferably a sequence that alone does not form intramolecular annealing necessary for binding to the steroid compound. Then, the sensor (ii) is obtained by annealing the terminal region (Ba) of the blocking region (B) adjacent to the binding region (A) and the stabilization region (S) in the presence of the steroid compound. It is preferable that a stable structure for binding to the steroid compound is formed from the whole of the binding region (A), the terminal region (Ba), and the stabilization region (S).
 前記センサ(ii)は、例えば、以下のようなメカニズムに基づいて、前記ステロイド化合物の存否により、前記立体形成領域(D)の立体構造の形成が、ON-OFFに制御され、これにより、前記デバイ長の範囲において、前記センサを構成するヌクレオチド残基の数が増加すると推定される。なお、本発明は、このメカニズムには制限されない。前記センサ(ii)において、前記立体形成領域(D)の部分領域(Dp)が、前記ブロッキング領域(B)と相補的であるため、この相補関係において、ステム形成が可能である。このため、前記ステロイド化合物の非存在下では、前記立体形成領域(D)の部分領域(Dp)と前記ブロッキング領域(B)とのステム形成が生じる。このステム形成により、前記立体形成領域(D)の立体構造の形成が阻害される(スイッチ-OFF)。また、前記結合領域(A)は、それ単独では前記ステロイド化合物との結合に必要な分子内アニーリングが形成されない配列であるため、前記ステロイド化合物と結合するためのより安定な構造の形成がブロックされ、前記ステロイド化合物と結合していない状態の構造が維持される。他方、前記ステロイド化合物の存在下では、前記結合領域(A)への前記ステロイド化合物の接触により、前記結合領域(A)が前記安定な構造に変化する。これに伴い、前記ブロッキング領域(B)と前記立体形成領域(D)の部分領域(Dp)とのステム形成が解除され、新たに、前記ブロッキング領域(B)の末端領域(Ba)と前記安定化領域(S)とのアニーリングにより、ステムが形成され、このステムが、前記結合領域(A)が前記ステロイド化合物に結合するために必要な分子内アニーリングの役目を担い、前記ステムと前記結合領域(A)との全体から、前記安定な構造が形成され、前記結合領域(A)に前記ステロイド化合物が結合する。そして、前記ブロッキング領域(B)と前記立体形成領域(D)とのステム形成の解除により、新たに前記立体形成領域(D)が分子内アニーリングによって立体構造を形成する(スイッチ-ON)。また、前記結合領域(A)が、前記安定な構造に変化し、且つ、前記立体形成領域(D)が前記立体構造を形成することにより、前記センサ(ii)が、例えば、前記トランジスタ側に収縮する。このため、前記センサ(ii)によれば、前記ステロイド化合物存在下、すなわち、前記立体構造の形成時において、前記デバイ長のヌクレオチド数が、前記ステロイド化合物非存在下、すなわち、前記立体構造の形成の阻害時よりも増加するため、定性または定量等の前記ステロイド化合物の分析が可能となる。 In the sensor (ii), for example, based on the following mechanism, the formation of the three-dimensional structure of the three-dimensional formation region (D) is controlled to ON-OFF depending on the presence or absence of the steroid compound. In the Debye length range, the number of nucleotide residues constituting the sensor is estimated to increase. Note that the present invention is not limited to this mechanism. In the sensor (ii), since the partial region (Dp) of the three-dimensional formation region (D) is complementary to the blocking region (B), stem formation is possible in this complementary relationship. For this reason, in the absence of the steroid compound, stem formation occurs between the partial region (Dp) of the stereogenic region (D) and the blocking region (B). By this stem formation, formation of the three-dimensional structure of the three-dimensional formation region (D) is inhibited (switch-OFF). Further, since the binding region (A) is a sequence that does not form intramolecular annealing necessary for binding to the steroid compound by itself, formation of a more stable structure for binding to the steroid compound is blocked. The structure in a state where it is not bonded to the steroid compound is maintained. On the other hand, in the presence of the steroid compound, the binding region (A) changes to the stable structure by the contact of the steroid compound with the binding region (A). Along with this, the stem formation of the blocking region (B) and the partial region (Dp) of the three-dimensional formation region (D) is released, and the terminal region (Ba) of the blocking region (B) and the stable region are newly added. The stem is formed by annealing with the activating region (S), and this stem plays a role of intramolecular annealing necessary for the binding region (A) to bind to the steroid compound, and the stem and the binding region The stable structure is formed from the entirety of (A), and the steroid compound is bound to the binding region (A). Then, by releasing the stem formation between the blocking region (B) and the three-dimensional formation region (D), the three-dimensional formation region (D) newly forms a three-dimensional structure by intramolecular annealing (switch-ON). In addition, the coupling region (A) changes to the stable structure, and the three-dimensional formation region (D) forms the three-dimensional structure, so that the sensor (ii) is, for example, on the transistor side. Shrink. Therefore, according to the sensor (ii), in the presence of the steroid compound, that is, when the three-dimensional structure is formed, the number of nucleotides of the Debye length is in the absence of the steroid compound, that is, the formation of the three-dimensional structure. Therefore, the steroid compound can be analyzed qualitatively or quantitatively.
 前記センサ(ii)において、前記立体形成領域(D)、前記ブロッキング領域(B)、前記結合領域(A)、および前記安定化領域(S)の順序は、特に制限されず、例えば、5’側からこの順序で連結してもよいし、3’側からこの順序で連結してもよく、好ましくは前者である。 In the sensor (ii), the order of the three-dimensional formation region (D), the blocking region (B), the binding region (A), and the stabilization region (S) is not particularly limited. For example, 5 ′ They may be connected in this order from the side, or may be connected in this order from the 3 ′ side, preferably the former.
 前記センサ(ii)において、特に示さない限り、前記センサ(i)の記載を援用できる。前記センサ(ii)において、前記立体形成領域(D)、前記ブロッキング領域(B)、および前記安定化領域(S)は、例えば、前記センサ(i)と同様である。 In the sensor (ii), the description of the sensor (i) can be used unless otherwise indicated. In the sensor (ii), the three-dimensional formation region (D), the blocking region (B), and the stabilization region (S) are the same as, for example, the sensor (i).
 前記ブロッキング領域(B)は、前述のように、前記立体形成領域(D)と前記安定化領域(S)のそれぞれに対して、相補的な配列を有している。具体的には、前記ブロッキング領域(B)は、前記立体形成領域(D)の部分領域(Dp)に相補的であり、前記ブロッキング領域(B)の前記結合領域(A)側の末端領域(Ba)は、前記安定化領域(S)に対しても相補的である。 As described above, the blocking region (B) has a complementary sequence to each of the three-dimensional formation region (D) and the stabilization region (S). Specifically, the blocking region (B) is complementary to the partial region (Dp) of the three-dimensional region (D), and the terminal region (B) on the binding region (A) side ( Ba) is also complementary to the stabilization region (S).
 前記ブロッキング領域(B)において、前記安定化領域(S)と相補的な末端領域(Ba)の長さは、特に制限されず、下限は、例えば、1塩基長であり、上限は、例えば、15塩基長、10塩基長、3塩基長であり、その範囲は、例えば、1~10塩基長、1~5塩基長、1~3塩基長である。 In the blocking region (B), the length of the terminal region (Ba) complementary to the stabilization region (S) is not particularly limited, and the lower limit is, for example, one base length, and the upper limit is, for example, 15 base length, 10 base length and 3 base length, and the range is, for example, 1 to 10 base length, 1 to 5 base length, and 1 to 3 base length.
 前記センサ(ii)の全長の長さは、特に制限されず、下限は、例えば、25塩基長、35塩基長、40塩基長であり、上限は、例えば、200塩基長、120塩基長、80塩基長であり、その範囲は、例えば、25~200塩基長、35~120塩基長、40~80塩基長である。 The total length of the sensor (ii) is not particularly limited, and the lower limit is, for example, 25 base length, 35 base length, 40 base length, and the upper limit is, for example, 200 base length, 120 base length, 80 The base length is, for example, 25 to 200 bases, 35 to 120 bases, 40 to 80 bases.
 前記センサ(ii)は、例えば、一方の末端が、前記トランジスタに連結されてもよい。 For example, one end of the sensor (ii) may be connected to the transistor.
 前記核酸センサ(ii)は、例えば、一方の末端または両端に、さらに、前記付加リンカー領域が付加されてもよい。前記付加リンカー領域の長さは、特に制限されず、例えば、前述の説明を援用できる。この場合、前記センサ(ii)は、例えば、一方の末端が、前記付加リンカー領域を介して、前記トランジスタに連結されてもよい。 In the nucleic acid sensor (ii), for example, the additional linker region may be further added to one end or both ends. The length of the additional linker region is not particularly limited, and for example, the above description can be used. In this case, for example, one end of the sensor (ii) may be connected to the transistor via the additional linker region.
2-3.核酸センサ(iii)
 前記センサ(iii)は、例えば、前記立体形成領域(D)、ステム形成領域(S)、前記結合領域(A)およびステム形成領域(S)を有し、
前記ステム形成領域(S)は、前記立体形成領域(D)に対して相補的な配列を有し、
前記ステム形成領域(S)は、前記結合領域(A)に対して相補的な配列を有する一本鎖型核酸センサである。
2-3. Nucleic acid sensor (iii)
The sensor (iii) includes, for example, the three-dimensional formation region (D), the stem formation region (S D ), the binding region (A), and the stem formation region (S A ).
The stem forming region (S D ) has a sequence complementary to the three-dimensional forming region (D),
The stem forming region (S A ) is a single-stranded nucleic acid sensor having a sequence complementary to the binding region (A).
 前記センサ(iii)において、前記立体形成領域(D)は、例えば、前記一本鎖型である。 In the sensor (iii), the three-dimensional formation region (D) is, for example, the single-stranded type.
 前記センサ(iii)は、例えば、以下のようなメカニズムに基づいて、前記ステロイド化合物の存否により、前記立体形成領域(D)の立体構造の形成が、ON-OFFに制御され、これにより、前記デバイ長の範囲において、前記センサを構成するヌクレオチド残基の数が増加すると推定される。なお、本発明は、このメカニズムには制限されない。前記センサ(iii)は、前記ステロイド化合物非存在下では、前記分子内で、前記立体形成領域(D)と前記ステム形成領域(S)とがアニーリングすることで、前記立体形成領域(D)の前記立体構造の形成が阻害される(スイッチ-OFF)。また、前記分子内で、前記結合領域(A)と前記ステム形成領域(S)とがアニーリングすることで、前記結合領域(A)は、前記ステロイド化合物と結合するためのより安定な構造の形成がブロックされ、前記ステロイド化合物と結合していない状態の構造が維持される。他方、前記ステロイド化合物存在下では、前記センサ(iii)は、前記結合領域(A)への前記ステロイド化合物の接触によって、前記結合領域(A)と前記ステム形成領域(S)とのアニーリングが解除され、前記結合領域(A)の構造が、前記安定な構造に変化する。これに伴い、前記立体形成領域(D)と前記ステム形成領域(S)とのアニーリングが解除され、前記立体形成領域(D)の領域内で前記立体構造が形成される(スイッチ-ON)。また、前記結合領域(A)が、前記安定な構造に変化し、且つ、前記立体形成領域(D)が前記立体構造を形成することにより、前記センサ(iii)が、例えば、前記トランジスタ側に収縮する。このため、前記センサ(iii)によれば、前記ステロイド化合物存在下、すなわち、前記立体構造の形成時において、前記デバイ長のヌクレオチド数が、前記ステロイド化合物非存在下、すなわち、前記立体構造の形成の阻害時よりも増加するため、定性または定量等の前記ステロイド化合物の分析が可能となる。 In the sensor (iii), for example, based on the following mechanism, the formation of the three-dimensional structure of the three-dimensional formation region (D) is controlled to be ON-OFF depending on the presence or absence of the steroid compound. In the Debye length range, the number of nucleotide residues constituting the sensor is estimated to increase. Note that the present invention is not limited to this mechanism. In the absence of the steroid compound, the sensor (iii) anneals the three-dimensional formation region (D) and the stem formation region (S D ) in the molecule, so that the three-dimensional formation region (D) The formation of the three-dimensional structure is inhibited (switch-OFF). Further, in the molecule, the binding region (A) and the stem formation region (S A ) are annealed, so that the binding region (A) has a more stable structure for binding to the steroid compound. Formation is blocked and the structure is not bonded to the steroid compound. On the other hand, in the presence of the steroid compound, the sensor (iii) causes the annealing of the binding region (A) and the stem formation region (S A ) by the contact of the steroid compound with the binding region (A). When released, the structure of the binding region (A) changes to the stable structure. Accordingly, the annealing of the three-dimensional formation region (D) and the stem formation region (S D ) is released, and the three-dimensional structure is formed in the region of the three-dimensional formation region (D) (switch-ON). . Further, when the binding region (A) is changed to the stable structure and the three-dimensional formation region (D) forms the three-dimensional structure, the sensor (iii) is, for example, on the transistor side. Shrink. Therefore, according to the sensor (iii), in the presence of the steroid compound, that is, when the three-dimensional structure is formed, the number of nucleotides of the Debye length is in the absence of the steroid compound, that is, the formation of the three-dimensional structure. Therefore, the steroid compound can be analyzed qualitatively or quantitatively.
 前記ステム形成領域(S)は、例えば、その全部または一部が、前記立体形成領域(D)の一部に対して相補的な配列であることが好ましい。また、前記ステム形成領域(S)は、例えば、その全部または一部が、前記結合領域(A)の一部に対して相補的な配列であることが好ましい。 For example, the stem formation region (S D ) preferably has a sequence that is entirely or partially complementary to a part of the three-dimensional formation region (D). Moreover, it is preferable that the stem forming region (S A ) is, for example, a sequence that is entirely or partially complementary to a part of the binding region (A).
 前記センサ(iii)において、前記各領域の順序は、前記分子内で、前記立体形成領域(D)と前記ステム形成領域(S)とがアニーリングし、前記結合領域(A)と前記ステム形成領域(S)とがアニーリングする順序であればよい。具体例としては、以下の順序が例示できる。
  (1) 5’- A-S-D-S -3’
  (2) 5’- S-D-S-A -3’
  (3) 5’- D-S-A-S -3’
  (4) 5’- S-A-S-D -3’
In the sensor (iii), the three-dimensional formation region (D) and the stem formation region (S D ) are annealed in the molecule, and the binding region (A) and the stem formation are performed in the sensor (iii). The order of annealing with the region (S A ) is sufficient. The following order can be illustrated as a specific example.
(1) 5'- A-S D -D-S A -3 '
(2) 5'-S A -DSD D -A -3 '
(3) 5'- D-S A -A-S D -3 '
(4) 5'-S D -AS A -D -3 '
 前記(1)-(4)の形態は、例えば、以下のように、立体構造の形成がON-OFFされる。前記ステロイド化合物非存在下、前記結合領域(A)と前記ステム形成領域(S)、前記立体形成領域(D)と前記ステム形成領域(S)が、それぞれステムを形成し、前記立体形成領域(D)の前記立体構造の形成を阻害する。そして、前記ステロイド化合物存在下、前記結合領域(A)への前記ステロイド化合物の接触により、前記それぞれのステム形成が解除され、前記立体形成領域(D)において、前記立体構造が形成される。 In the forms (1) to (4), for example, the formation of a three-dimensional structure is turned on and off as follows. In the absence of the steroid compound, the binding region (A) and the stem formation region (S A ), the three-dimensional formation region (D) and the stem formation region (S D ) each form a stem, and the three-dimensional formation The formation of the three-dimensional structure in the region (D) is inhibited. Then, in the presence of the steroid compound, the formation of the respective stems is released by the contact of the steroid compound with the binding region (A), and the three-dimensional structure is formed in the three-dimensional formation region (D).
 前記(1)および(3)において、前記ステム形成領域(S)は、前記立体形成領域(D)の3’側領域と相補的であり、前記ステム形成領域(S)は、前記結合領域(A)の3’側領域と相補的であることが好ましい。前記(2)および(4)において、前記ステム形成領域(S)は、前記立体形成領域(D)の5’側領域と相補的であり、前記ステム形成領域(S)は、前記結合領域(A)の5’側領域と相補的であることが好ましい。 In the above (1) and (3), the stem forming region (S D ) is complementary to the 3′-side region of the three-dimensional forming region (D), and the stem forming region (S A ) It is preferably complementary to the 3 ′ region of the region (A). In the above (2) and (4), the stem formation region (S D ) is complementary to the 5′-side region of the three-dimensional formation region (D), and the stem formation region (S A ) It is preferably complementary to the 5 ′ region of the region (A).
 前記センサ(iii)は、例えば、前記各領域間が、直接的または間接的に連結してもよい。前記直接的な連結は、例えば、一方の領域の3’末端と他方の領域の5’末端とが直接結合していることを意味し、前記間接的な連結は、例えば、一方の領域の3’末端と他方の領域の5’末端とが、前記介在リンカー領域を介して結合していることを意味する。前記介在リンカー領域は、例えば、核酸配列でもよいし、非核酸配列でもよく、好ましくは前者である。 The sensor (iii) may be connected directly or indirectly between the regions, for example. The direct connection means that, for example, the 3 ′ end of one region and the 5 ′ end of the other region are directly bonded, and the indirect connection is, for example, 3 of one region. It means that the “end” and the 5 ′ end of the other region are bound via the intervening linker region. The intervening linker region may be, for example, a nucleic acid sequence or a non-nucleic acid sequence, preferably the former.
 前記センサ(iii)は、例えば、前記介在リンカー領域として、互いに非相補的な2つの介在リンカー領域を有することが好ましい。前記2つの介在リンカー領域の位置は、特に制限されない。 The sensor (iii) preferably has, for example, two intervening linker regions that are non-complementary to each other as the intervening linker region. The positions of the two intervening linker regions are not particularly limited.
 具体例として、前記(1)-(4)が、さらに2つの介在リンカー領域を有する形態について、例えば、以下の順序が例示できる。以下の例示において、前記結合領域(A)に連結する介在リンカー領域を(L)、前記立体形成領域(D)に連結する介在リンカー領域を(L)で示す。前記センサ(iii)は、例えば、介在リンカー領域として、例えば、(L)および(L)の両方を有してもよいし、いずれか一方のみを有してもよい。
  (1’) 5’- A-L-S-D-L-S -3’
  (2’) 5’- S-L-D-S-L-A -3’
  (3’) 5’- D-L-S-A-L-S -3’
  (4’) 5’- S-L-A-S-L-D -3’
As a specific example, for example, the following order can be exemplified for the forms (1) to (4) further having two intervening linker regions. In the following examples, the intervening linker region linked to the binding region (A) is indicated by (L 1 ), and the intervening linker region linked to the stereogenic region (D) is indicated by (L 2 ). The sensor (iii) may have, for example, both (L 1 ) and (L 2 ) as an intervening linker region, or may have only one of them.
(1 ') 5'- A-L 1 -S D -D-L 2 -S A -3'
(2 ') 5'- S A -L 2 -DSD D -L 1 -A -3'
(3 ′) 5′-DL 2 -S A -AL 1 -S D -3 ′
(4 ') 5'- S D -L 1 -A-S A -L 2 -D -3'
 前記(1’)-(4’)の形態は、例えば、以下のように、立体構造の形成がON-OFFされる。前記ステロイド化合物非存在下、例えば、前記結合領域(A)と前記ステム形成領域(S)、前記立体形成領域(D)と前記ステム形成領域(S)が、それぞれステムを形成し、これら2つのステムの間で、前記介在リンカー領域(L)と前記介在リンカー領域(L)が、内部ループを形成して、前記立体形成領域(D)の立体構造の形成を阻害する。そして、前記ステロイド化合物存在下、前記結合領域(A)への前記ステロイド化合物の接触により、前記それぞれのステム形成が解除され、前記立体形成領域(D)において、立体構造が形成される。 In the form (1 ′)-(4 ′), for example, the formation of the three-dimensional structure is turned on and off as follows. In the absence of the steroid compound, for example, the binding region (A) and the stem formation region (S A ), the three-dimensional formation region (D) and the stem formation region (S D ) each form a stem, Between the two stems, the intervening linker region (L 1 ) and the intervening linker region (L 2 ) form an internal loop to inhibit the formation of the three-dimensional structure of the three-dimensional formation region (D). Then, in the presence of the steroid compound, the formation of the respective stems is released by the contact of the steroid compound with the binding region (A), and a three-dimensional structure is formed in the three-dimensional formation region (D).
 前記センサ(iii)において、前記ステム形成領域(S)および前記ステム形成領域(S)の長さは、特に制限されない。前記ステム形成領域(S)の長さは、例えば、1~60塩基長、1~10塩基長、1~7塩基長である。前記ステム形成領域(S)の長さは、例えば、1~30塩基長、0~10塩基長、1~10塩基長、0~7塩基長、1~7塩基長である。前記ステム形成領域(S)と前記ステム形成領域(S)は、例えば、同じ長さでもよいし、前者が長くてもよいし、後者が長くてもよい。 In the sensor (iii), the lengths of the stem formation region (S A ) and the stem formation region (S D ) are not particularly limited. The length of the stem formation region (S A ) is, for example, 1 to 60 bases long, 1 to 10 bases long, or 1 to 7 bases long. The length of the stem formation region (S D ) is, for example, 1 to 30 bases, 0 to 10 bases, 1 to 10 bases, 0 to 7 bases, or 1 to 7 bases. For example, the stem forming region (S A ) and the stem forming region (S D ) may have the same length, the former may be long, or the latter may be long.
 前記介在リンカー領域(L)および(L)の長さは、特に制限されない。前記介在リンカー領域(L)および(L)の長さは、それぞれ、例えば、0~30塩基長、1~30塩基長、1~15塩基長、1~6塩基長である。また、前記介在リンカー領域(L)および(L)の長さは、例えば、同じでも、異なってもよい。後者の場合、前記介在リンカー領域(L)および(L)の長さの差は、特に制限されず、例えば、1~10塩基長、1または2塩基長、1塩基長である。 The lengths of the intervening linker regions (L 1 ) and (L 2 ) are not particularly limited. The lengths of the intervening linker regions (L 1 ) and (L 2 ) are, for example, 0 to 30 bases, 1 to 30 bases, 1 to 15 bases, and 1 to 6 bases, respectively. The lengths of the intervening linker regions (L 1 ) and (L 2 ) may be the same or different, for example. In the latter case, the difference in length between the intervening linker regions (L 1 ) and (L 2 ) is not particularly limited, and is, for example, 1 to 10 bases long, 1 or 2 bases long, and 1 base long.
 前記センサ(iii)の長さは、特に制限されない。前記センサ(iii)の長さは、例えば、40~120塩基長、45~100塩基長、50~80塩基長である。 The length of the sensor (iii) is not particularly limited. The length of the sensor (iii) is, for example, 40 to 120 bases long, 45 to 100 bases long, 50 to 80 bases long.
 前記センサ(iii)は、例えば、一方の末端が、前記トランジスタに連結されてもよい。 For example, one end of the sensor (iii) may be connected to the transistor.
 コルチゾールに結合する前記センサ(iii)の具体例として、前記センサ(iii)は、例えば、下記(c)のポリヌクレオチドを含む。 As a specific example of the sensor (iii) that binds to cortisol, the sensor (iii) includes, for example, the following polynucleotide (c).
(c)下記(c1)、(c2)、または(c3)のポリヌクレオチド
(c1)配列番号3の塩基配列からなるポリヌクレオチド
(c2)配列番号3の塩基配列において、1もしくは数個の塩基が欠失、置換、挿入および/または付加された塩基配列からなり、前記結合領域(A)に対応する領域がコルチゾールに結合し、前記立体形成領域(D)に対応する領域が前記所定の立体構造を形成し、前記ステム形成領域(S)に対応する領域が前記結合領域(A)に結合(アニーリング)し、前記ステム形成領域(S)に対応する領域が前記立体形成領域(D)に結合(アニーリング)するポリヌクレオチド
(c3)配列番号3の塩基配列に対して、80%以上の同一性を有する塩基配列からなり、前記結合領域(A)に対応する領域がコルチゾールに結合し、前記立体形成領域(D)に対応する領域が前記所定の立体構造を形成し、前記ステム形成領域(S)に対応する領域が前記結合領域(A)に結合(アニーリング)し、前記ステム形成領域(S)に対応する領域が前記立体形成領域(D)に結合(アニーリング)するポリヌクレオチド
(C) polynucleotide (c2) comprising the nucleotide sequence of SEQ ID NO: 3 (c1), polynucleotide (c1), (c3) or (c3) below: (c1) In the nucleotide sequence of SEQ ID NO: 3, one or several bases It consists of a base sequence deleted, substituted, inserted and / or added, the region corresponding to the binding region (A) binds to cortisol, and the region corresponding to the stereogenic region (D) is the predetermined three-dimensional structure The region corresponding to the stem formation region (S A ) is bonded (annealed) to the binding region (A), and the region corresponding to the stem formation region (S D ) is the solid formation region (D). The polynucleotide (c3) that binds (anneals) to the nucleotide sequence of SEQ ID NO: 3 consists of a nucleotide sequence having at least 80% identity, and the region corresponding to the binding region (A) A region that binds to lutisol and that corresponds to the three-dimensional region (D) forms the predetermined three-dimensional structure, and a region that corresponds to the stem-forming region (S A ) binds to the binding region (A) (annealing). polynucleotide, and said stem forming regions (S D) corresponding to the region is bound (annealing) on the three-dimensional formation region (D)
 前記(c1)のポリヌクレオチドは、下記配列番号3の塩基配列からなるポリヌクレオチドである。下記配列番号3の塩基配列において、括弧で囲んだ下線で示す塩基配列は、5’末端側から3’末端側に向かって、それぞれ、前記ステム形成領域(S)、前記介在リンカー領域を(L)、前記立体形成領域(D)、前記ステム形成領域(S)、前記介在リンカー領域を(L)、および前記結合領域(A)に対応する。
一本鎖型核酸センサ(配列番号3):5’-[ACCTCTG][T][GGGTGGGAGGGTCGGG][CCC][T][CAGAGGTCTCTTTGCCCGTGAACTCTG]-3’
The polynucleotide (c1) is a polynucleotide having the base sequence of SEQ ID NO: 3 below. In the base sequence of SEQ ID NO: 3 below, the base sequence indicated by the underline enclosed in parentheses is the stem-forming region (S A ) and the intervening linker region from the 5 ′ end to the 3 ′ end, respectively ( L 2 ), the three-dimensional formation region (D), the stem formation region (S D ), the intervening linker region corresponds to (L 1 ), and the binding region (A).
Single-stranded nucleic acid sensor (SEQ ID NO: 3): 5 '-[ ACCTCTG ] [ T ] [ GGGTGGGAGGGTCGGG ] [ CCC ] [ T ] [ CAGAGGTCTCTTTGCCCGTGAACTCTG ] -3'
 前記(c2)のポリヌクレオチドにおいて、「1もしくは数個」は、例えば、前記(c2)のポリヌクレオチドが、前記結合領域(A)に対応する領域がコルチゾールに結合し、前記立体形成領域(D)に対応する領域が前記所定の立体構造を形成し、前記ステム形成領域(S)に対応する領域が前記結合領域(A)に結合し、前記ステム形成領域(S)に対応する領域が前記立体形成領域(D)に結合する範囲であればよい。前記「1もしくは数個」は、前記(c1)の塩基配列において、例えば、1~11個、1~6個、1~3個、1または2個、1個である。 In the polynucleotide (c2), “one or several” means, for example, that the polynucleotide (c2) has a region corresponding to the binding region (A) bound to cortisol, and the three-dimensional region (D ) Region corresponding to the stem formation region (S A ), the region corresponding to the stem formation region (S A ) is bonded to the binding region (A), and the region corresponding to the stem formation region (S D ) May be in a range that binds to the three-dimensional formation region (D). The “1 or several” is, for example, 1 to 11, 1 to 6, 1 to 3, 1 or 2, or 1 in the base sequence of (c1).
 前記(c3)のポリヌクレオチドにおいて、「同一性」は、例えば、前記(c3)のポリヌクレオチドが、前記結合領域(A)に対応する領域がコルチゾールに結合し、前記立体形成領域(D)に対応する領域が前記所定の立体構造を形成し、前記ステム形成領域(S)に対応する領域が前記結合領域(A)に結合し、前記ステム形成領域(S)に対応する領域が前記立体形成領域(D)に結合する範囲であればよい。前記「同一性」は、例えば、80%以上、85%以上、90%以上、95%以上、96%以上、97%以上、98%以上、99%以上である。 In the polynucleotide of (c3), “identity” means, for example, that the polynucleotide of (c3) binds to cortisol in the region corresponding to the binding region (A), and the stereogenic region (D) The corresponding region forms the predetermined three-dimensional structure, the region corresponding to the stem forming region (S A ) is bonded to the bonding region (A), and the region corresponding to the stem forming region (S D ) is the What is necessary is just the range couple | bonded with a solid formation area | region (D). The “identity” is, for example, 80% or more, 85% or more, 90% or more, 95% or more, 96% or more, 97% or more, 98% or more, 99% or more.
 前記核酸センサ(iii)は、例えば、一方の末端または両端に、さらに、前記付加リンカー領域が付加されてもよい。前記付加リンカー領域の長さは、特に制限されず、例えば、前述の説明を援用できる。この場合、前記センサ(iii)は、例えば、一方の末端が、前記付加リンカー領域を介して、前記トランジスタに連結されてもよい。 In the nucleic acid sensor (iii), for example, the additional linker region may be further added to one end or both ends. The length of the additional linker region is not particularly limited, and for example, the above description can be used. In this case, for example, one end of the sensor (iii) may be connected to the transistor via the additional linker region.
2-4.核酸センサ(iv)
 前記センサ(iv)は、例えば、前記立体形成領域(D)および前記結合領域(A)を有し、
前記立体形成領域(D)が、第1領域(D1)と第2領域(D2)とを含み、前記第1領域(D1)と前記第2領域(D2)とにより立体構造を形成する領域であり、
前記結合領域(A)の一方の末端側に前記第1領域(D1)を有し、前記結合領域(A)の他方の末端側に前記第2領域(D2)を有する一本鎖型核酸センサである。
2-4. Nucleic acid sensor (iv)
The sensor (iv) has, for example, the three-dimensional formation region (D) and the binding region (A),
The three-dimensional formation region (D) includes a first region (D1) and a second region (D2), and forms a three-dimensional structure with the first region (D1) and the second region (D2). Yes,
A single-stranded nucleic acid sensor having the first region (D1) on one end side of the binding region (A) and the second region (D2) on the other end side of the binding region (A) It is.
 前記センサ(iv)において、前記立体形成領域(D)は、例えば、前記二本鎖型(以下、「スプリット型」ともいう)である。前記スプリット型の立体形成領域(D)は、前記第1領域(D1)と前記第2領域(D2)とを含み、両者が一対となり立体構造を形成する分子である。前記センサ(iv)において、前記第1領域(D1)および前記第2領域(D2)は、それぞれ、前記立体構造を形成する配列であればよく、より好ましくは、グアニン四重鎖構造を形成する配列である。 In the sensor (iv), the three-dimensional formation region (D) is, for example, the double-stranded type (hereinafter also referred to as “split type”). The split-type three-dimensional formation region (D) is a molecule that includes the first region (D1) and the second region (D2), and the pair forms a three-dimensional structure. In the sensor (iv), the first region (D1) and the second region (D2) may each be a sequence that forms the three-dimensional structure, and more preferably a guanine quadruplex structure. Is an array.
 前記センサ(iv)は、例えば、以下のようなメカニズムに基づいて、前記ステロイド化合物の存否により、前記立体形成領域(D)の立体構造の形成が、ON-OFFに制御され、これにより、前記デバイ長の範囲において、前記センサを構成するヌクレオチド残基の数が増加すると推定される。なお、本発明は、このメカニズムには制限されない。前記センサ(iv)は、前述のように、一対となって立体構造を形成する前記第1領域(D1)と前記第2領域(D2)とが、前記結合領域(A)を介して、それぞれ離れて配置されている。このように、前記第1領域(D1)と前記第2領域(D2)とが距離を置いて配置されているため、前記ステロイド化合物非存在下では、前記第1領域(D1)と前記第2領域(D2)との間で、立体構造の形成が阻害される(スイッチ-OFF)。他方、前記センサ(iv)は、前記ステロイド化合物存在下では、前記結合領域(A)への前記ステロイド化合物の接触によって、前記結合領域(A)の構造が、ステムループ構造を有する、前記ステロイド化合物と結合するためのより安定な構造に変化する。この前記結合領域(A)の構造変化に伴い、前記第1領域(D1)と前記第2領域(D2)とが接近し、前記第1領域(D1)と前記第2領域(D2)との間で、立体構造が形成される(スイッチ-ON)。また、前記結合領域(A)が、前記安定な構造に変化し、且つ、前記立体形成領域(D)が前記立体構造を形成することにより、前記センサ(iv)が、例えば、前記トランジスタ側に収縮する。このため、前記センサ(iv)によれば、前記ステロイド化合物存在下、すなわち、前記立体構造の形成時において、前記デバイ長のヌクレオチド数が、前記ステロイド化合物非存在下、すなわち、前記立体構造の形成の阻害時よりも増加するため、定性または定量等の前記ステロイド化合物の分析が可能となる。 In the sensor (iv), for example, on the basis of the following mechanism, the formation of the three-dimensional structure of the three-dimensional formation region (D) is controlled to be ON-OFF depending on the presence or absence of the steroid compound. In the Debye length range, the number of nucleotide residues constituting the sensor is estimated to increase. Note that the present invention is not limited to this mechanism. As described above, the sensor (iv) includes a pair of the first region (D1) and the second region (D2) that form a three-dimensional structure via the coupling region (A). Are located apart. Thus, since the first region (D1) and the second region (D2) are arranged at a distance, in the absence of the steroid compound, the first region (D1) and the second region (D2). The formation of a three-dimensional structure is inhibited between the region (D2) (switch-OFF). On the other hand, in the sensor (iv), in the presence of the steroid compound, the structure of the binding region (A) has a stem-loop structure due to the contact of the steroid compound with the binding region (A). Changes to a more stable structure for bonding with. With the structural change of the coupling region (A), the first region (D1) and the second region (D2) approach each other, and the first region (D1) and the second region (D2) A three-dimensional structure is formed between them (switch-ON). In addition, the bonding region (A) changes to the stable structure, and the three-dimensional formation region (D) forms the three-dimensional structure, so that the sensor (iv) is, for example, on the transistor side. Shrink. Therefore, according to the sensor (iv), in the presence of the steroid compound, that is, when the three-dimensional structure is formed, the number of nucleotides of the Debye length is in the absence of the steroid compound, that is, the formation of the three-dimensional structure. Therefore, the steroid compound can be analyzed qualitatively or quantitatively.
 前記センサ(iv)は、前述のように、前記立体形成領域(D)として、二本鎖型を使用し、前記結合領域(A)を介して、前記第1領域(D1)と前記第2領域(D2)とを配置している。このため、例えば、アプタマーの種類ごとに条件設定を行う必要がなく、前記結合領域(A)として所望のアプタマーをセットできることから、汎用性に優れる。 As described above, the sensor (iv) uses a double-stranded type as the three-dimensional formation region (D), and the first region (D1) and the second region via the binding region (A). Region (D2) is arranged. For this reason, for example, it is not necessary to set conditions for each type of aptamer, and since a desired aptamer can be set as the binding region (A), the versatility is excellent.
 前記センサ(iv)において、前記第1領域(D1)と前記第2領域(D2)は、前記結合領域(A)を介して配置されていればよく、いずれが前記結合領域(A)の5’側または3’側に配置されてもよい。以下、特に説明しない限り、便宜上、前記結合領域(A)の5’側に前記第1領域(D1)、前記結合領域(A)の3’側に前記第2領域(D2)が配置されている例を示す。 In the sensor (iv), the first region (D1) and the second region (D2) may be arranged via the coupling region (A), and any one of the five of the coupling regions (A). It may be arranged on the 'side or 3' side. Hereinafter, unless otherwise specified, for convenience, the first region (D1) is disposed on the 5 ′ side of the coupling region (A), and the second region (D2) is disposed on the 3 ′ side of the coupling region (A). An example is shown.
 前記センサ(iv)は、例えば、前記第1領域(D1)と前記結合領域(A)との間が、直接的または間接的に連結してもよいし、前記第2領域(D2)と前記結合領域(A)との間が、直接的または間接的に連結してもよい。前記直接的な連結は、例えば、一方の領域の3’末端と他方の領域の5’末端とが直接結合していることを意味し、前記間接的な連結は、例えば、一方の領域の3’末端と他方の領域の5’末端とが、前記介在リンカー領域を介して結合していることを意味し、具体的には、一方の領域の3’末端と前記介在リンカー領域の5’末端とが直接結合し、前記介在リンカー領域の3’末端と他方の領域の5’末端とが直接結合していることを意味する。前記介在リンカー領域は、例えば、核酸配列でもよいし、非核酸配列でもよく、好ましくは前者である。 In the sensor (iv), for example, the first region (D1) and the binding region (A) may be directly or indirectly connected, or the second region (D2) and the The binding region (A) may be connected directly or indirectly. The direct connection means that, for example, the 3 ′ end of one region and the 5 ′ end of the other region are directly bonded, and the indirect connection is, for example, 3 of one region. Means that the 'terminal and the 5' end of the other region are linked via the intervening linker region; specifically, the 3 'end of one region and the 5' end of the intervening linker region Means that the 3 ′ end of the intervening linker region and the 5 ′ end of the other region are directly bound. The intervening linker region may be, for example, a nucleic acid sequence or a non-nucleic acid sequence, preferably the former.
 前記センサ(iv)は、前述のように、前記第1領域(D1)と前記結合領域(A)との間に前記介在リンカー領域(第1リンカー領域(L))を有し、前記第2領域(D2)と前記結合領域(A)との間に前記介在リンカー領域(第2リンカー領域(L))を有することが好ましい。前記第1リンカー領域(L)および前記第2リンカー領域(L)は、いずれか一方でもよく、両方を有することが好ましい。前記第1リンカー領域(L)と前記第2リンカー領域(L)の両方を有する場合、それぞれの長さは、同じ長さでもよいし、異なってもよい。 As described above, the sensor (iv) includes the intervening linker region (first linker region (L 1 )) between the first region (D1) and the binding region (A). It is preferable that the intervening linker region (second linker region (L 2 )) is provided between two regions (D2) and the binding region (A). The first linker region (L 1 ) and the second linker region (L 2 ) may be either one or preferably both. When both the first linker region (L 1 ) and the second linker region (L 2 ) are included, the respective lengths may be the same or different.
 前記リンカー領域の長さは、特に制限されず、その下限は、例えば、1、3、5、7、9塩基長であり、その上限は、例えば、20、15、10塩基長である。 The length of the linker region is not particularly limited, and the lower limit is, for example, 1, 3, 5, 7, 9 bases, and the upper limit is, for example, 20, 15, 10 bases.
 また、前記第1リンカー領域(L)の5’側からの塩基配列と前記第2リンカー領域(L)の3’側からの塩基配列とは、例えば、互いに非相補的であることが好ましい。この場合、前記第1リンカー領域(L)の5’側からの塩基配列と前記第2リンカー領域(L)の3’側からの塩基配列は、アライメントした状態で、前記センサ(iv)の分子内で内部ループを形成する領域ともいえる。このように、前記第1領域(D1)および前記第2領域(D2)と前記結合領域(A)との間に、非相補的な前記第1リンカー領域(L)と前記第2リンカー領域(L)を有することで、例えば、前記第1領域(D1)と前記第2領域(D2)との距離を十分に保つことができる。このため、例えば、前記ステロイド化合物非存在下における、前記第1領域(D1)と前記第2領域(D2)とによる立体構造の形成を、十分に抑制し、前記ステロイド化合物非存在下での、立体構造の形成に基づくバックグラウンドを十分に低下することができる。 The base sequence from the 5 ′ side of the first linker region (L 1 ) and the base sequence from the 3 ′ side of the second linker region (L 2 ) may be non-complementary to each other, for example. preferable. In this case, the base sequence from the 5 ′ side of the first linker region (L 1 ) and the base sequence from the 3 ′ side of the second linker region (L 2 ) are aligned, and the sensor (iv) It can also be said that the region forms an internal loop in the molecule. Thus, the first linker region (L 1 ) and the second linker region that are non-complementary between the first region (D1) and the second region (D2) and the binding region (A). By having (L 2 ), for example, the distance between the first region (D1) and the second region (D2) can be sufficiently maintained. For this reason, for example, in the absence of the steroid compound, the formation of the three-dimensional structure by the first region (D1) and the second region (D2) is sufficiently suppressed, and in the absence of the steroid compound, The background based on the formation of the three-dimensional structure can be sufficiently reduced.
 前記センサ(iv)が、例えば、「D1-W-D2」で表され、前記介在リンカー領域として、前記第1リンカー領域(L)のみを有する場合、前記式におけるWは、例えば、5’側から、第1リンカー領域(L)と前記結合領域(A)とをこの順序で有し、前記第2リンカー領域(L)のみを有する場合、前記式におけるWは、例えば、5’側から、前記結合領域(A)と第2リンカー領域(L)とをこの順序で有し、前記第1リンカー領域(L)と前記第2リンカー領域(L)の両方を有する場合、前記式におけるWは、例えば、5’側から、前記第1リンカー領域(L)と前記結合領域(A)と前記第2リンカー領域(L)とをこの順序で有する。この場合、D1-W-D2で表されるセンサ(iv)は、それぞれ、例えば、D1-L-A-D2、D1-A-L-D2またはD1-L-A-L-D2と表すことができる。 When the sensor (iv) is represented by, for example, “D1-W-D2” and has only the first linker region (L 1 ) as the intervening linker region, W in the formula is, for example, 5 ′ From the side, when having the first linker region (L 1 ) and the binding region (A) in this order and having only the second linker region (L 2 ), W in the formula is, for example, 5 ′ From the side, having the binding region (A) and the second linker region (L 2 ) in this order, and having both the first linker region (L 1 ) and the second linker region (L 2 ) W in the formula has, for example, the first linker region (L 1 ), the binding region (A), and the second linker region (L 2 ) in this order from the 5 ′ side. In this case, the sensor represented by D1-W-D2 (iv), respectively, for example, D1-L 1 -A-D2 , D1-A-L 2 -D2 or D1-L 1 -A-L 2 - It can be expressed as D2.
 前記センサ(iv)は、例えば、前記第1領域(D1)と前記第2領域(D2)とが、それぞれ、前記結合領域(A)の位置とは反対側の末端に、互いに相補的な配列を有することが好ましい。具体的には、例えば、前記第1領域(D1)が前記結合領域(A)の5’側に配置されている場合、前記第1領域(D1)と前記第2領域(D2)とは、前記第1領域(D1)の5’末端と前記第2領域(D2)の3’末端に、互いに相補的な配列を有することが好ましい。また、例えば、前記第1領域(D1)が前記結合領域(A)の3’側に配置されている場合、前記第1領域(D1)と前記第2領域(D2)とは、前記第1領域(D1)の3’末端と前記第2領域(D2)の5’末端に、互いに相補的な配列を有することが好ましい。このように、前記第1領域(D1)と前記第2領域(D2)とが、それぞれの末端における前記相補的な配列を有することで、前記配列間で、分子内アニーリングによりステム構造の形成が可能となる。このため、例えば、前記ステロイド化合物存在下、前記ステロイド化合物の接触による前記結合領域(A)の構造変化に伴い、前記第1領域(D1)と前記第2領域(D2)とが接近した際、前記配列間でのステム構造の形成によって、前記第1領域(D1)と前記第2領域(D2)との立体構造の形成がより容易になる。 The sensor (iv) includes, for example, a sequence in which the first region (D1) and the second region (D2) are complementary to each other at the end opposite to the position of the binding region (A). It is preferable to have. Specifically, for example, when the first region (D1) is disposed on the 5 ′ side of the coupling region (A), the first region (D1) and the second region (D2) are: It is preferable that the 5 ′ end of the first region (D1) and the 3 ′ end of the second region (D2) have sequences complementary to each other. For example, when the first region (D1) is disposed on the 3 ′ side of the coupling region (A), the first region (D1) and the second region (D2) are the first region (D1). The 3 ′ end of the region (D1) and the 5 ′ end of the second region (D2) preferably have complementary sequences. Thus, since the first region (D1) and the second region (D2) have the complementary sequences at their respective ends, a stem structure can be formed between the sequences by intramolecular annealing. It becomes possible. Therefore, for example, in the presence of the steroid compound, when the first region (D1) and the second region (D2) approach each other due to the structural change of the binding region (A) due to contact with the steroid compound, Formation of a stem structure between the arrays facilitates formation of a three-dimensional structure of the first region (D1) and the second region (D2).
 前記センサ(iv)は、例えば、前述のように、D1-W-D2で表すことができ、具体的には、下記式(3)で表すことができる。
Figure JPOXMLDOC01-appb-C000003
For example, as described above, the sensor (iv) can be represented by D1-W-D2, and specifically can be represented by the following formula (3).
Figure JPOXMLDOC01-appb-C000003
 前記式(3)中、
5’側の配列(N)n1-GGG-(N)n2-(N)n3-が、前記第1領域(D1)の配列(d1)であり、
3’側の配列-(N)m3-(N)m2-GGG-(N)m1が、前記第2領域(D2)の配列(d2)であり、
Wが、前記第1領域(D1)と前記第2領域(D2)との間の領域であって、前記結合領域(A)を含み、
Nは、塩基を示し、n1、n2およびn3ならびにm1、m2およびm3は、それぞれ塩基Nの繰り返し個数を示す。
In the formula (3),
5 'side sequence (N) n1 -GGG- (N) n2 - (N) n3 - is the sequence of the first region (D1) (d1),
3 ′ sequence-(N) m3- (N) m2 -GGG- (N) m1 is the sequence (d2) of the second region (D2),
W is a region between the first region (D1) and the second region (D2), including the coupling region (A),
N represents a base, and n1, n2, and n3, and m1, m2, and m3 represent the number of repetitions of the base N, respectively.
 前記式(3)は、前記センサ(iv)において、前記第1領域(D1)と前記第2領域(D2)とを分子内アライメントした状態を示すが、これは、前記第1領域(D1)と前記第2領域(D2)との配列の関係を示すための模式図であって、本発明において、前記第1領域(D1)と前記第2領域(D2)とが、この状態を取ることを限定するものではない。 Formula (3) shows a state in which the first region (D1) and the second region (D2) are aligned in the molecule in the sensor (iv), which is the first region (D1). And the second region (D2) in the present invention, the first region (D1) and the second region (D2) take this state in the present invention It is not intended to limit.
 前記第1領域(D1)の配列(d1)および前記第2領域(D2)の配列(d2)は、例えば、(N)n1と(N)m1とが、下記条件(1)を満たし、(N)n2と(N)m2とが、下記条件(2)を満たし、(N)n3と(N)m3とが、下記条件(3)を満たすことが好ましい。 In the arrangement (d1) of the first region (D1) and the arrangement (d2) of the second region (D2), for example, (N) n1 and (N) m1 satisfy the following condition (1): N) n2 and (N) m2 preferably satisfy the following condition (2), and (N) n3 and (N) m3 preferably satisfy the following condition (3).
条件(1)
 (N)n1および(N)m1は、(N)n1の5’側からの塩基配列と(N)m1の3’側からの塩基配列とが、互いに相補的であり、n1およびm1は、同じ0または正の整数である。
条件(2)
 (N)n2および(N)m2は、(N)n2の5’側からの塩基配列と(N)m2の3’側からの塩基配列とが、互いに非相補的であり、n2およびm2は、それぞれ、正の整数であり、同じでも異なってもよい。
条件(3)
 (N)n3および(N)m3は、n3およびm3が、それぞれ、3または4であり、同じでも異なってもよく、3つの塩基Gを有し、n3またはm3が4の場合、(N)n3および(N)m3は、2番目または3番目の塩基がG以外の塩基Hである。
Condition (1)
In (N) n1 and (N) m1 , the base sequence from the 5 ′ side of (N) n1 and the base sequence from the 3 ′ side of (N) m1 are complementary to each other, and n1 and m1 are The same 0 or a positive integer.
Condition (2)
In (N) n2 and (N) m2 , the base sequence from the 5 ′ side of (N) n2 and the base sequence from the 3 ′ side of (N) m2 are non-complementary to each other, and n2 and m2 are Are positive integers, which may be the same or different.
Condition (3)
(N) n3 and (N) m3 are those in which n3 and m3 are 3 or 4, respectively, and may be the same or different, have three bases G, and when n3 or m3 is 4, (N) In n3 and (N) m3 , the second or third base is a base H other than G.
 前記条件(1)は、前記第1領域(D1)と前記第2領域(D2)とをアライメントした場合の5’末端の(N)n1と3’末端の(N)m1との条件である。前記条件(1)において、前記(N)n1の5’側からの塩基配列と前記(N)m1の3’側からの塩基配列とは、互いに相補的であり、同じ長さである。(N)n1と(N)m1とは、同じ長さの相補的な配列であるため、アライメントした状態で、ステムを形成するステム領域ともいえる。 The condition (1) is a condition of (N) n1 at the 5 ′ end and (N) m1 at the 3 ′ end when the first region (D1) and the second region (D2) are aligned. . In the condition (1), the base sequence from the 5 ′ side of the (N) n1 and the base sequence from the 3 ′ side of the (N) m1 are complementary to each other and have the same length. Since (N) n1 and (N) m1 are complementary sequences of the same length, they can be said to be stem regions that form stems in an aligned state.
 n1およびm1は、同じ0または正の整数であればよく、例えば、それぞれ、0、1~10であり、好ましくは、1、2または3である。 N1 and m1 may be the same 0 or a positive integer, and are, for example, 0, 1 to 10, and preferably 1, 2, or 3, respectively.
 前記条件(2)は、前記第1領域(D1)と前記第2領域(D2)とをアライメントした場合の(N)n2と(N)m2との条件である。前記条件(2)において、前記(N)n2の塩基配列と前記(N)m2の塩基配列とは、互いに非相補的であり、n2およびm2は、同じ長さでも異なる長さでもよい。(N)n2と(N)m2とは、非相補的な配列であるため、アライメントした状態で、内部ループを形成する領域ともいえる。 The condition (2) is a condition of (N) n2 and (N) m2 when the first region (D1) and the second region (D2) are aligned. In the condition (2), the base sequence of (N) n2 and the base sequence of (N) m2 are non-complementary to each other, and n2 and m2 may have the same length or different lengths. Since (N) n2 and (N) m2 are non-complementary sequences, they can be said to be regions that form an inner loop in an aligned state.
 n2およびm2は、正の整数であり、例えば、それぞれ、1~10であり、好ましくは、1または2である。n2とm2とは、同じでも異なってもよく、例えば、n2=m2、n2>m2、n2<m2のいずれでもよく、好ましくはn2>m2、n2<m2である。 N2 and m2 are positive integers, for example, 1 to 10 respectively, preferably 1 or 2. n2 and m2 may be the same or different. For example, n2 = m2, n2> m2, and n2 <m2, and preferably n2> m2 and n2 <m2.
 前記条件(3)は、前記第1領域(D1)と前記第2領域(D2)とをアライメントした場合の(N)n3と(N)m3との条件である。前記条件(3)において、前記(N)n3の塩基配列と前記(N)m3の塩基配列とは、それぞれ、3つの塩基Gを有する3塩基長または4塩基長の配列であり、同じでも異なってもよい。n3またはm3が4の場合、(N)n3および(N)m3は、2番目または3番目の塩基がG以外の塩基Hである。3つのGを有する(N)n3および(N)m3は、(N)n1と(N)n2との間のGGGおよび(N)m1と(N)m2との間のGGGとともに、G-カルテット構造を形成するG形成領域(G)である。 The condition (3) is a condition of (N) n3 and (N) m3 when the first region (D1) and the second region (D2) are aligned. In the condition (3), the base sequence of (N) n3 and the base sequence of (N) m3 are 3 or 4 base length sequences having 3 bases G, and the same or different May be. When n3 or m3 is 4, (N) n3 and (N) m3 are bases H other than G in the second or third base. (N) n3 and (N) m3 with three Gs together with GGG between (N) n1 and (N) n2 and GGG between (N) m1 and (N) m2 G formation region (G) forming the structure.
 n3およびm3は、例えば、n3=m3、n3>m3、n3<m3のいずれでもよく、好ましくはn3>m3、n3<m3である。 N3 and m3 may be any of n3 = m3, n3> m3, and n3 <m3, and preferably n3> m3 and n3 <m3.
 G以外の塩基である前記塩基Hは、例えば、A、C、TまたはUがあげられ、好ましくは、A、CまたはTである。 Examples of the base H that is a base other than G include A, C, T, and U, and preferably A, C, or T.
 前記条件(3)は、具体例として、下記条件(3-1)、(3-2)または(3-3)があげられる。
条件(3-1)
 (N)n3および(N)m3のうち、一方の5’側からの配列がGHGGであり、他方の5’側からの配列がGGGである。
条件(3-2)
 (N)n3および(N)m3のうち、一方の5’側からの配列がGGHGであり、他方の5’側からの配列がGGGである。
条件(3-3)
 (N)n3および(N)m3の両方の配列がGGGである。
Specific examples of the condition (3) include the following conditions (3-1), (3-2), and (3-3).
Condition (3-1)
Among (N) n3 and (N) m3 , the sequence from one 5 ′ side is GHGG, and the sequence from the other 5 ′ side is GGG.
Condition (3-2)
Among (N) n3 and (N) m3 , the sequence from one 5 ′ side is GGHG, and the sequence from the other 5 ′ side is GGG.
Condition (3-3)
Both (N) n3 and (N) m3 sequences are GGG.
 前記第1領域(D1)の長さは、特に制限されず、下限は、例えば、7塩基長、8塩基長、10塩基長であり、上限は、例えば、30塩基長、20塩基長、10塩基長であり、その範囲は、例えば、7~30塩基長、7~20塩基長、7~10塩基長である。前記第2領域(D2)の長さは、特に制限されず、その下限は、例えば、7塩基長、8塩基長、10塩基長であり、その上限は、例えば、30塩基長、20塩基長、10塩基長であり、その範囲は、例えば、7~30塩基長、7~20塩基長、7~10塩基長である。前記第1領域(D1)と前記第2領域(D2)の長さは、それぞれ同じであっても異なってもよい。 The length of the first region (D1) is not particularly limited, and the lower limit is, for example, 7 base length, 8 base length, 10 base length, and the upper limit is, for example, 30 base length, 20 base length, 10 The base length is, for example, 7 to 30 bases, 7 to 20 bases, or 7 to 10 bases. The length of the second region (D2) is not particularly limited, and the lower limit thereof is, for example, 7 base length, 8 base length, 10 base length, and the upper limit thereof is, for example, 30 base length, 20 base length. The range is, for example, 7 to 30 bases, 7 to 20 bases, or 7 to 10 bases. The lengths of the first region (D1) and the second region (D2) may be the same or different.
 前記センサ(iv)の長さは、特に制限されない。前記センサ(iv)の長さの下限は、例えば、25塩基長、30塩基長、35塩基長であり、その上限は、例えば、200塩基長、100塩基長、80塩基長であり、その範囲は、例えば、25~200塩基長、30~100塩基長、35~80塩基長である。 The length of the sensor (iv) is not particularly limited. The lower limit of the length of the sensor (iv) is, for example, 25 base length, 30 base length, 35 base length, and the upper limit is, for example, 200 base length, 100 base length, 80 base length, and its range Is, for example, 25 to 200 bases long, 30 to 100 bases long, 35 to 80 bases long.
 前記センサ(iv)は、例えば、一方の末端が、前記トランジスタに連結されてもよい。 For example, one end of the sensor (iv) may be connected to the transistor.
 前記センサ(iv)は、例えば、一方の末端または両端に、さらに、前記付加リンカー領域が付加されてもよい。前記付加リンカー領域の長さは、特に制限されず、例えば、前述の説明を援用できる。この場合、前記センサ(iv)は、例えば、一方の末端が、前記付加リンカー領域を介して、前記トランジスタに連結されてもよい。 In the sensor (iv), for example, the additional linker region may be further added to one end or both ends. The length of the additional linker region is not particularly limited, and for example, the above description can be used. In this case, for example, one end of the sensor (iv) may be connected to the transistor via the additional linker region.
2-5.核酸センサ(v)
 前記センサ(v)は、前記立体形成領域(D)および前記結合領域(A)をこの順序で有し、
前記立体形成領域(D)と前記結合領域(A)とが、互いに相補的な配列を有する一本鎖型核酸センサである。
2-5. Nucleic acid sensor (v)
The sensor (v) has the three-dimensional formation region (D) and the binding region (A) in this order,
The three-dimensional formation region (D) and the binding region (A) are single-stranded nucleic acid sensors having sequences complementary to each other.
 前記センサ(v)において、前記立体形成領域(D)は、例えば、前記一本鎖型である。 In the sensor (v), the three-dimensional formation region (D) is, for example, the single-stranded type.
 前記センサ(v)は、例えば、以下のようなメカニズムに基づいて、前記ステロイド化合物の存否により、前記立体形成領域(D)の立体構造の形成が、ON-OFFに制御され、これにより、前記デバイ長の範囲において、前記センサを構成するヌクレオチド残基の数が増加すると推定される。なお、本発明は、このメカニズムには制限されない。前記センサ(v)は、前記ステロイド化合物非存在下では、前記分子内で、前記立体形成領域(D)と前記結合領域(A)とがアニーリングすることで、前記立体形成領域(D)の前記立体構造の形成が阻害される(スイッチ-OFF)。また、前記分子内で、前記結合領域(A)と前記立体形成領域(D)とがアニーリングすることで、前記結合領域(A)は、前記ステロイド化合物と結合するためのより安定な構造の形成がブロックされ、前記ステロイド化合物と結合していない状態の構造が維持される。他方、前記センサ(v)は、前記ステロイド化合物存在下では、前記結合領域(A)への前記ステロイド化合物の接触によって、前記結合領域(A)の構造が、前記安定な構造に変化する。これに伴い、前記立体形成領域(D)と前記結合領域(A)との領域内アニーリングが解除され、前記立体形成領域(D)の領域内で前記立体構造が形成される(スイッチ-ON)。また、前記結合領域(A)が、前記安定な構造に変化し、且つ、前記立体形成領域(D)が前記立体構造を形成することにより、前記センサ(v)が、例えば、前記トランジスタ側に収縮する。このため、前記センサ(v)によれば、前記ステロイド化合物存在下、すなわち、前記立体構造の形成時において、前記デバイ長のヌクレオチド数が、前記ステロイド化合物非存在下、すなわち、前記立体構造の形成の阻害時よりも増加するため、定性または定量等の前記ステロイド化合物の分析が可能となる。 In the sensor (v), for example, based on the following mechanism, the formation of the three-dimensional structure of the three-dimensional formation region (D) is controlled to ON-OFF depending on the presence or absence of the steroid compound. In the Debye length range, the number of nucleotide residues constituting the sensor is estimated to increase. Note that the present invention is not limited to this mechanism. In the absence of the steroid compound, the sensor (v) anneals the stereogenic region (D) and the binding region (A) in the molecule, whereby the stereogenic region (D) The formation of the three-dimensional structure is inhibited (switch-OFF). In addition, the binding region (A) and the three-dimensional formation region (D) are annealed in the molecule, so that the binding region (A) forms a more stable structure for binding to the steroid compound. Is blocked, and the structure in a state where it is not bonded to the steroid compound is maintained. On the other hand, in the sensor (v), in the presence of the steroid compound, the structure of the binding region (A) changes to the stable structure by the contact of the steroid compound with the binding region (A). Along with this, the annealing in the region between the three-dimensional formation region (D) and the bonding region (A) is canceled, and the three-dimensional structure is formed in the region of the three-dimensional formation region (D) (switch-ON). . In addition, the coupling region (A) changes to the stable structure, and the three-dimensional formation region (D) forms the three-dimensional structure, so that the sensor (v) is, for example, on the transistor side. Shrink. Therefore, according to the sensor (v), in the presence of the steroid compound, that is, when the three-dimensional structure is formed, the number of nucleotides of the Debye length is in the absence of the steroid compound, that is, the formation of the three-dimensional structure. Therefore, the steroid compound can be analyzed qualitatively or quantitatively.
 前記センサ(v)において、前記立体形成領域(D)と前記結合領域(A)とは、前記立体形成領域(D)の5’側からの配列と、前記結合領域(A)の3’側からの配列とが、互いに相補的な配列を有することが好ましい。前記立体形成領域(D)における相補配列および前記結合領域(A)における相補配列は、それぞれステム形成領域(St)ということもでき、また、前者の前記立体形成領域(D)における相補配列は、前記結合領域(A)に対するステム形成領域(S)、後者の前記結合領域(A)における相補配列は、前記立体形成領域(D)に対するステム形成領域(S)ということもできる。前記立体形成領域(D)は、例えば、その一部が、前記相補配列、すなわち前記ステム形成領域(S)であり、前記結合領域(A)は、例えば、その一部が、前記相補配列、すなわち前記ステム形成領域(S)であることが好ましい。前記立体形成領域(D)における前記相補配列の位置、前記結合領域(A)における前記相補配列の位置は、それぞれ、特に制限されない。 In the sensor (v), the three-dimensional formation region (D) and the binding region (A) are an arrangement from the 5 ′ side of the three-dimensional formation region (D) and a 3 ′ side of the binding region (A). Preferably have sequences complementary to each other. The complementary sequence in the stereogenic region (D) and the complementary sequence in the binding region (A) can also be referred to as stem-forming regions (St), respectively, and the complementary sequence in the former stereogenic region (D) is The stem formation region (S A ) for the binding region (A) and the complementary sequence in the latter binding region (A) can also be referred to as the stem formation region (S D ) for the three-dimensional formation region (D). For example, a part of the three-dimensional formation region (D) is the complementary sequence, that is, the stem formation region (S A ), and a part of the binding region (A) is, for example, the complementary sequence. That is, it is preferably the stem formation region (S D ). The position of the complementary sequence in the three-dimensional region (D) and the position of the complementary sequence in the binding region (A) are not particularly limited.
 前記センサ(v)において、前記立体形成領域(D)と前記結合領域(A)との間における各相補配列の長さは、特に制限されない。前記各相補配列の長さは、例えば、1~30塩基長、1~10塩基長、1~7塩基長である。 In the sensor (v), the length of each complementary sequence between the three-dimensional region (D) and the binding region (A) is not particularly limited. The length of each complementary sequence is, for example, 1 to 30 bases long, 1 to 10 bases long, or 1 to 7 bases long.
 前記センサ(v)は、例えば、前記立体形成領域(D)と前記結合領域(A)との間が、直接的または間接的に連結してもよい。前記直接的な連結は、例えば、一方の領域の3’末端と他方の領域の5’末端とが直接結合していることを意味し、前記間接的な連結は、例えば、一方の領域の3’末端と他方の領域の5’末端とが、リンカー領域を介して結合していることを意味する。 In the sensor (v), for example, the three-dimensional formation region (D) and the binding region (A) may be directly or indirectly connected. The direct connection means that, for example, the 3 ′ end of one region and the 5 ′ end of the other region are directly bonded, and the indirect connection is, for example, 3 of one region. It means that the “end” and the 5 ′ end of the other region are bonded via a linker region.
 前記領域間を連結するリンカー領域を、以下、介在リンカー領域ともいう。前記介在リンカー領域は、例えば、核酸配列でもよいし、非核酸配列でもよく、好ましくは前者である。前記介在リンカー領域の長さは、特に制限されず、例えば、0~20塩基長、1~10塩基長、1~6塩基長である。 Hereinafter, the linker region connecting the regions is also referred to as an intervening linker region. The intervening linker region may be, for example, a nucleic acid sequence or a non-nucleic acid sequence, preferably the former. The length of the intervening linker region is not particularly limited and is, for example, 0 to 20 bases long, 1 to 10 bases long, or 1 to 6 bases long.
 前記センサ(v)の長さは、特に制限されない。前記センサ(v)の長さは、例えば、40~120塩基長、45~100塩基長、50~80塩基長である。 The length of the sensor (v) is not particularly limited. The length of the sensor (v) is, for example, 40 to 120 bases, 45 to 100 bases, 50 to 80 bases.
 前記センサ(v)は、例えば、一方の末端が、前記トランジスタに連結されてもよい。 For example, one end of the sensor (v) may be connected to the transistor.
 前記センサ(v)は、例えば、一方の末端または両端に、さらに、前記付加リンカー領域が付加されてもよい。前記付加リンカー領域の長さは、特に制限されず、例えば、前述の説明を援用できる。この場合、前記センサ(v)は、例えば、一方の末端が、前記付加リンカー領域を介して、前記トランジスタに連結されてもよい。 In the sensor (v), for example, the additional linker region may be further added to one end or both ends. The length of the additional linker region is not particularly limited, and for example, the above description can be used. In this case, for example, one end of the sensor (v) may be connected to the transistor via the additional linker region.
 本発明において、前記センサは、ヌクレオチド残基を含む分子であり、例えば、ヌクレオチド残基のみからなる分子でもよいし、ヌクレオチド残基を含む分子でもよい。前記ヌクレオチドは、例えば、リボヌクレオチド、デオキシリボヌクレオチドおよびそれらの誘導体である。具体的に、前記センサは、例えば、デオキシリボヌクレオチドおよび/またはその誘導体を含むDNAでもよいし、リボヌクレオチドおよび/またはその誘導体を含むRNAでもよいし、前者と後者とを含むキメラ(DNA/RNA)でもよい。前記センサは、好ましくは、DNAである。 In the present invention, the sensor is a molecule including a nucleotide residue, and may be, for example, a molecule consisting of only a nucleotide residue or a molecule including a nucleotide residue. The nucleotide is, for example, ribonucleotide, deoxyribonucleotide and derivatives thereof. Specifically, the sensor may be, for example, DNA containing deoxyribonucleotide and / or a derivative thereof, RNA containing ribonucleotide and / or a derivative thereof, or a chimera (DNA / RNA) containing the former and the latter But you can. The sensor is preferably DNA.
 前記ヌクレオチドは、塩基として、例えば、天然塩基(非人工塩基)および非天然塩基(人工塩基)のいずれを含んでもよい。前記天然塩基は、例えば、A、C、G、T、Uおよびこれらの修飾塩基があげられる。前記修飾は、例えば、メチル化、フルオロ化、アミノ化、チオ化等があげられる。前記非天然塩基は、例えば、2’-フルオロピリミジン、2’-O-メチルピリミジン等があげられ、具体例としては、2’-フルオロウラシル、2’-アミノウラシル、2’-O-メチルウラシル、2’-チオウラシル等があげられる。前記ヌクレオチドは、例えば、修飾されたヌクレオチドでもよく、前記修飾ヌクレオチドは、例えば、2’-メチル化-ウラシルヌクレオチド残基、2’-メチル化-シトシンヌクレオチド残基、2’-フルオロ化-ウラシルヌクレオチド残基、2’-フルオロ化-シトシンヌクレオチド残基、2’-アミノ化-ウラシルヌクレオチド残基、2’-アミノ化-シトシンヌクレオチド残基、2’-チオ化-ウラシルヌクレオチド残基、2’-チオ化-シトシンヌクレオチド残基等があげられる。前記センサは、例えば、PNA(ペプチド核酸)、LNA(Locked Nucleic Acid)等の非ヌクレオチドを含んでもよい。 The nucleotide may contain, for example, either a natural base (non-artificial base) or a non-natural base (artificial base) as a base. Examples of the natural base include A, C, G, T, U, and modified bases thereof. Examples of the modification include methylation, fluorination, amination, and thiolation. Examples of the unnatural base include 2′-fluoropyrimidine, 2′-O-methylpyrimidine and the like. Specific examples include 2′-fluorouracil, 2′-aminouracil, 2′-O-methyluracil, And 2'-thiouracil. The nucleotide may be, for example, a modified nucleotide, and the modified nucleotide is, for example, a 2′-methylated-uracil nucleotide residue, 2′-methylated-cytosine nucleotide residue, 2′-fluorinated-uracil nucleotide. Residue, 2′-fluorinated-cytosine nucleotide residue, 2′-aminated-uracil nucleotide residue, 2′-aminated-cytosine nucleotide residue, 2′-thiolated-uracil nucleotide residue, 2′- Thio-cytosine nucleotide residues and the like. The sensor may include non-nucleotides such as PNA (peptide nucleic acid) and LNA (Locked Nucleic Acid), for example.
 前記センサは、前記トランジスタに配置されている。前記センサは、例えば、前記トランジスタに、直接的に固定化してもよいし、間接的に固定化してもよい。前者の場合、例えば、前記センサの末端において、前記センサを前記トランジスタに固定化することが好ましい。後者の場合、例えば、前記センサを、固定化用のリンカーを介して、前記トランジスタに固定化してもよい。前記リンカーは、例えば、核酸配列でもよいし、非核酸配列でもよく、前述の付加リンカー領域等があげられる。前記トランジスタに前記センサが固定化されている場合、前記センサの配置部は、前記トランジスタにおける検出部ということもできる。前記非核酸配列は、例えば、アルキル基を含む配列があげられる。具体例として、前記センサは、例えば、以下に示すように、前記非核酸配列を介して、前記トランジスタに固定化されている。以下の式(4)において、(CHにおけるnは、例えば、1~10、2~10、6である。
 [トランジスタ]-NH-(CH-[センサ]    ・・・(4)
The sensor is disposed in the transistor. For example, the sensor may be fixed directly or indirectly to the transistor. In the former case, for example, the sensor is preferably fixed to the transistor at the end of the sensor. In the latter case, for example, the sensor may be fixed to the transistor via a fixing linker. The linker may be, for example, a nucleic acid sequence or a non-nucleic acid sequence, and examples thereof include the above-described additional linker region. When the sensor is fixed to the transistor, the arrangement portion of the sensor can also be referred to as a detection portion in the transistor. Examples of the non-nucleic acid sequence include sequences containing an alkyl group. As a specific example, the sensor is immobilized on the transistor via the non-nucleic acid sequence, for example, as shown below. In the following formula (4), n in (CH 2 ) n is, for example, 1 to 10, 2 to 10, or 6.
[Transistor] -NH- (CH 2 ) n- [Sensor] (4)
 前記式(4)において、前記非核酸配列の一端[-NH]は、例えば、前記トランジスタにおけるアルデヒド基と単結合を形成する。また、前記非核酸配列の他端[CH-]は、例えば、前記センサにおけるリン酸とのエステル結合による単結合を形成している。 In the formula (4), one end [—NH] of the non-nucleic acid sequence forms a single bond with an aldehyde group in the transistor, for example. The other end [CH 2- ] of the non-nucleic acid sequence forms a single bond by an ester bond with phosphoric acid in the sensor, for example.
 前記固定化方法は、特に制限されず、例えば、化学的結合による連結が例示できる。具体例としては、例えば、前記トランジスタおよび前記センサのいずれか一方に、ストレプトアビジンまたはアビジンを結合させ、他方に、ビオチンを結合させ、前者と後者との結合を利用して固定化する方法があげられる。また、前記トランジスタが絶縁膜上にAu(金)が製膜された構造を有する場合、前記センサにチオール基を付加し、前記チオール基を介して前記センサに固定化する方法(T. Goda and Y. Miyahara, “Label-free and reagent-less protein biosensing using aptamer-modified extended-gate field-effect transistors”, Biosensors and Bioelectronics, vol.45, 15 July 2013, pp. 89-94参照)があげられる。 The immobilization method is not particularly limited, and examples thereof include chemical bonding. As a specific example, for example, there is a method in which streptavidin or avidin is bound to one of the transistor and the sensor, biotin is bound to the other, and immobilization is performed using the binding between the former and the latter. It is done. When the transistor has a structure in which Au (gold) is formed on an insulating film, a method of adding a thiol group to the sensor and immobilizing the sensor via the thiol group (T.TGoda and) Y. Miyahara, “Label-free and reagent-less protein biosensing using aptamer-modified extended-gate field-effect transistors”, Biosensors and Bioelectronics, vol.45, 15 July 2013, pp. 89-94).
 前記固定化方法は、例えば、この他に、公知の核酸固定化方法が採用できる。前記方法は、例えば、フォトリソグラフィーを利用する方法があげられ、具体例として、米国特許5,424,186号明細書等を参照できる。また、前記固定化方法は、例えば、前記トランジスタ上で前記センサを合成する方法があげられる。この方法は、例えば、いわゆるスポット法があげられ、具体例として、米国特許5,807,522号明細書、特表平10-503841号公報等を参照できる。 As the immobilization method, for example, other known nucleic acid immobilization methods can be adopted. Examples of the method include a method using photolithography, and specific examples thereof can be referred to US Pat. No. 5,424,186. The immobilization method includes, for example, a method of synthesizing the sensor on the transistor. As this method, for example, a so-called spot method can be mentioned. As specific examples, US Pat. No. 5,807,522, Japanese Patent Publication No. 10-503841 and the like can be referred to.
 本発明において、前記トランジスタは、特に制限されず、例えば、前記デバイ長の範囲における電荷の変化を検出できるトランジスタがあげられ、具体例として、電界効果トランジスタがあげられる。前記電界効果トランジスタは、例えば、公知の電界効果トランジスタが使用でき、具体例として、特開2011-247795号公報、国際公開第2014/024598号等を参照できる。 In the present invention, the transistor is not particularly limited, and examples thereof include a transistor capable of detecting a change in charge in the Debye length range, and a specific example thereof is a field effect transistor. As the field effect transistor, for example, a known field effect transistor can be used, and specific examples thereof include JP 2011-247795 A and International Publication No. 2014/024598.
 本発明において、前記トランジスタは、例えば、基板、ソース電極、ドレイン電極、参照電極、および検出部を含み、前記ソース電極、前記ドレイン電極、および前記検出部は、前記基板上に配置され、前記検出部は、前記ソース電極と前記ドレイン電極との間に配置され、前記核酸センサは、前記検出部に配置される。前記参照電極は、例えば、試料中のステロイド化合物を検出する際に、前記検出部と接触する電解質を含む溶液(例えば、電解質を含む試料)中に配置される。前記参照電極は、例えば、前記ソース電極および前記ドレイン電極と接触しないように配置される。 In the present invention, the transistor includes, for example, a substrate, a source electrode, a drain electrode, a reference electrode, and a detection unit, and the source electrode, the drain electrode, and the detection unit are disposed on the substrate, and the detection The unit is disposed between the source electrode and the drain electrode, and the nucleic acid sensor is disposed in the detection unit. For example, when the steroid compound in the sample is detected, the reference electrode is disposed in a solution containing an electrolyte (for example, a sample containing the electrolyte) that comes into contact with the detection unit. For example, the reference electrode is disposed so as not to contact the source electrode and the drain electrode.
 前記基板、前記ソース電極、前記ドレイン電極等は、前述の公知の電界効果トランジスタの構成を参照できる。また、前記トランジスタは、例えば、前記電界効果トランジスタの種類に応じて、ゲート電極、絶縁膜層等の他の構成を含んでもよい。前記他の構成は、例えば、前述の公知の電界効果トランジスタの構成を参照できる。 The substrate, the source electrode, the drain electrode, and the like can refer to the configuration of the above-described known field effect transistor. The transistor may include other configurations such as a gate electrode and an insulating film layer, for example, depending on the type of the field effect transistor. For the other configuration, for example, the configuration of the aforementioned known field effect transistor can be referred to.
 本発明のデバイスは、例えば、複数のトランジスタを備えてもよい。この場合、各トランジスタが、例えば、前述のような検出部を備えることが好ましい。本発明のデバイスにおいて、1つの検出部に配置するセンサの数は、特に制限されない。 The device of the present invention may include, for example, a plurality of transistors. In this case, it is preferable that each transistor includes a detection unit as described above, for example. In the device of the present invention, the number of sensors arranged in one detection unit is not particularly limited.
 本発明において、前記デバイ長は、前記トランジスタに接触する電解質を含む溶液(例えば、電解質溶液)のデバイ長を意味し、より具体的には、前記トランジスタの検出部に接触する試料(例えば、電解質を含む試料)のデバイ長を意味する。前記デバイ長は、特に制限されず、一般的なデバイ長の算出式で算出でき、例えば、下記式(5)により算出できる。 In the present invention, the Debye length means a Debye length of a solution (for example, an electrolyte solution) containing an electrolyte in contact with the transistor, and more specifically, a sample (for example, an electrolyte in contact with the detection unit of the transistor). Debye length of a sample including The Debye length is not particularly limited, and can be calculated by a general Debye length calculation formula. For example, the Debye length can be calculated by the following formula (5).
   δ=(εεkT/2q2I)1/2        ・・・(5)
   δ:デバイ長
   ε:比誘電率
   ε0:真空の誘電率
   k:ボルツマン定数
   T:絶対温度
   q:電荷
   I:イオン強度
δ = (εε 0 kT / 2q2I) 1/2 (5)
δ: Debye length ε: Dielectric constant ε 0 : Dielectric constant of vacuum k: Boltzmann constant T: Absolute temperature q: Charge I: Ionic strength
 本発明の検出デバイスの使用方法は、特に制限されず、以下のように、本発明のステロイド含有化合物の検出方法に使用できる。 The method for using the detection device of the present invention is not particularly limited, and can be used for the method for detecting a steroid-containing compound of the present invention as follows.
<ステロイド含有化合物の検出方法>
 本発明のステロイド含有化合物の検出方法は、前述のように、前記本発明の検出デバイスに試料を接触させる接触工程、および前記検出デバイスのデバイ長の範囲における核酸センサを構成するヌクレオチド残基の数の増加または減少を検出することによって、前記試料中のステロイド含有化合物を検出する検出工程を含むことを特徴とする。本発明の検出方法は、前記本発明の検出デバイスを使用することが特徴であり、その他の構成および条件は、特に制限されない。本発明の検出方法は、例えば、前記本発明の検出デバイスの説明を援用できる。本発明の検出方法において、前記検出は、ステロイド化合物の有無の検出(例えば、定性分析)でもよいし、前記ステロイド化合物の量の検出(例えば、定量分析)でもよく、例えば、分析方法ということもできる。
<Method for detecting steroid-containing compound>
As described above, the method for detecting a steroid-containing compound of the present invention comprises a contacting step of bringing a sample into contact with the detection device of the present invention, and the number of nucleotide residues constituting a nucleic acid sensor within the Debye length range of the detection device. A detection step of detecting a steroid-containing compound in the sample by detecting an increase or a decrease in. The detection method of the present invention is characterized by using the detection device of the present invention, and other configurations and conditions are not particularly limited. For the detection method of the present invention, for example, the description of the detection device of the present invention can be used. In the detection method of the present invention, the detection may be detection of the presence or absence of a steroid compound (for example, qualitative analysis) or detection of the amount of the steroid compound (for example, quantitative analysis). it can.
 前記試料は、特に制限されない。前記試料は、例えば、前記ステロイド化合物を含む試料、および前記ステロイド化合物を含有するか否かが不明な試料のいずれでもよい。前記試料は、例えば、液体試料が好ましい。被検体が、例えば、液体の場合、前記被検体をそのまま試料として使用してもよいし、溶媒に混合した希釈液を試料として使用してもよい。前記被検体が、例えば、固体、粉末等の場合は、溶媒に混合した混合液、または、溶媒に懸濁した懸濁液等を、試料として使用してもよい。前記溶媒は、特に制限されず、例えば、水、緩衝液等があげられる。前記被検体は、例えば、生体、土壌、海水、川水、下水、飲食品、浄水、空気中等から採取した検体があげられる。前記試料は、例えば、電解質を含む液体すなわち、電解質溶液であることが好ましい。この場合、前記試料は、電解質を含む試料ということもできる。前記試料が前記電解質を含まない試料の場合、前記試料は、前記電解質を添加することが好ましい。前記電解質は、前記液体において、陽イオンと陰イオンとに分離する物質であればよく、その種類は、特に制限されない。 The sample is not particularly limited. The sample may be, for example, either a sample containing the steroid compound or a sample in which it is unknown whether the steroid compound is contained. The sample is preferably a liquid sample, for example. For example, when the analyte is a liquid, the analyte may be used as it is as a sample, or a diluted solution mixed in a solvent may be used as a sample. When the analyte is, for example, a solid or a powder, a mixed solution mixed with a solvent, a suspension suspended in a solvent, or the like may be used as a sample. The solvent is not particularly limited, and examples thereof include water and a buffer solution. Examples of the specimen include specimens collected from living organisms, soil, seawater, river water, sewage, food and drink, purified water, air, and the like. The sample is preferably, for example, a liquid containing an electrolyte, that is, an electrolyte solution. In this case, the sample can also be referred to as a sample containing an electrolyte. When the sample does not contain the electrolyte, it is preferable that the electrolyte is added to the sample. The electrolyte is not particularly limited as long as it is a substance that separates into cations and anions in the liquid.
 前記接触工程は、前記本発明の検出デバイスに試料を接触させる工程である。前記接触は、例えば、前記検出デバイスにおける前記トランジスタに、前記試料を接触させることで実施でき、具体的には、前記トランジスタの検出部に、前記試料を接触させることで実施できる。前記接触工程における接触条件(温度、時間)等は、特に制限されない。 The contact step is a step of bringing a sample into contact with the detection device of the present invention. The contact can be performed, for example, by bringing the sample into contact with the transistor in the detection device, and specifically, by bringing the sample into contact with a detection unit of the transistor. The contact conditions (temperature, time) and the like in the contact step are not particularly limited.
 前記検出デバイスが前記試薬を含む場合、前記接触工程は、例えば、前記検出デバイスに前記試料と前記試薬とを接触させてもよいし、前記試料と試薬とを予め混合し、前記デバイスに得られた混合物を接触させてもよい。後者の場合、本発明の検出方法は、例えば、前記試料と前記試薬とを混合する混合工程、および前記検出デバイスに得られた混合物を接触させる接触工程を含む。前記混合は、特に制限されず、公知の混合方法により実施でき、例えば、前記試料に前記試薬を接触させることで実施できる。前記混合工程における混合条件(温度、時間)等は、特に制限されない。前記試薬は、例えば、前述の前記第1鎖(ss1)または前記第2鎖(ss2)を含む試薬があげられる。 When the detection device includes the reagent, the contact step may be performed, for example, by bringing the sample and the reagent into contact with the detection device, or by mixing the sample and the reagent in advance. The mixture may be contacted. In the latter case, the detection method of the present invention includes, for example, a mixing step of mixing the sample and the reagent, and a contacting step of bringing the mixture obtained into contact with the detection device. The mixing is not particularly limited and can be performed by a known mixing method, for example, by bringing the reagent into contact with the sample. The mixing conditions (temperature, time) and the like in the mixing step are not particularly limited. Examples of the reagent include a reagent containing the first strand (ss1) or the second strand (ss2).
 前記検出工程は、前記検出デバイスのデバイ長の範囲における核酸センサを構成するヌクレオチド残基の数の増加または減少を検出することによって、前記試料中のステロイド化合物を検出する。前記ステロイド化合物の存在下、すなわち、前記立体構造の形成時において、前記センサは、前述のように、前記デバイ長のヌクレオチド数を増加または減少させる。また、前記センサを構成するヌクレオチド残基は、例えば、負の電荷を有する。このため、前記ステロイド化合物存在下において、前記デバイ長の範囲における電荷は、前記ステロイド化合物非存在下よりも増加または減少する。したがって、前記検出工程は、例えば、前記検出デバイスを用いて、デバイ長の範囲における電荷の増加または減少を検出することにより、前記デバイ長のヌクレオチド数の増加または減少、すなわち、前記試料中のステロイド化合物を検出できる。そこで、前記検出工程は、例えば、前記検出デバイスを用いて、前記検出デバイスのデバイ長の範囲における電荷を測定する電荷測定工程と、前記電荷(測定電荷)および基準電荷に基づき、前記デバイ長の範囲における前記ヌクレオチド残基の数の増加または減少を検出し、前記ステロイド化合物を検出するステロイド化合物検出工程とを含んでもよい。 The detection step detects a steroid compound in the sample by detecting an increase or decrease in the number of nucleotide residues constituting the nucleic acid sensor in the range of the Debye length of the detection device. In the presence of the steroid compound, that is, in the formation of the three-dimensional structure, the sensor increases or decreases the number of nucleotides of the Debye length as described above. Moreover, the nucleotide residue constituting the sensor has, for example, a negative charge. For this reason, in the presence of the steroid compound, the charge in the Debye length range is increased or decreased as compared to the absence of the steroid compound. Therefore, the detection step includes, for example, using the detection device to detect an increase or decrease in charge in the Debye length range, thereby increasing or decreasing the number of nucleotides in the Debye length, that is, a steroid in the sample. Compounds can be detected. Therefore, the detection step includes, for example, a charge measurement step of measuring a charge in a Debye length range of the detection device using the detection device, and the Debye length based on the charge (measurement charge) and a reference charge. A steroid compound detection step of detecting an increase or decrease in the number of nucleotide residues in a range and detecting the steroid compound.
 前記測定工程において、前記電荷の測定は、例えば、電気シグナルの測定があげられる。前記電気シグナルの測定は、例えば、前記検出デバイスのトランジスタにより測定できる。前記電気シグナルは、例えば、電圧、電流等があげられ、具体例として、ゲート電極における電圧(ゲート電圧)、ドレイン電極における電流値(ドレイン電流)等があげられる。前記ゲート電極における電圧を測定する場合、前記ドレイン電極における電流値は、固定することが好ましい。また、前記ドレイン電極における電流値を測定する場合、前記ゲート電極における電圧は、固定することが好ましい。前記ゲート電極における電圧は、例えば、前記ドレイン電極における電流値が、10~100μAにおける電圧である。 In the measurement step, the charge is measured by, for example, measuring an electric signal. The electrical signal can be measured by, for example, a transistor of the detection device. Examples of the electrical signal include a voltage and a current. Specific examples thereof include a voltage at the gate electrode (gate voltage), a current value at the drain electrode (drain current), and the like. When measuring the voltage at the gate electrode, the current value at the drain electrode is preferably fixed. When measuring the current value at the drain electrode, it is preferable to fix the voltage at the gate electrode. The voltage at the gate electrode is, for example, a voltage when the current value at the drain electrode is 10 to 100 μA.
 前記ステロイド化合物検出工程において、前記基準電荷は、例えば、前記ステロイド化合物非存在下における前記デバイ長の範囲における電荷があげられる。そして、前記基準電荷と比較して、前記測定電荷が増加または減少しているかを検出することにより、例えば、前記試料中のステロイド化合物の有無を分析(定性)でき、また、前記基準電荷と前記測定電荷との電荷の差を検出することによって、例えば、前記試料中のステロイド化合物の量を分析(定量)できる。具体的に、前記ステロイド化合物の存在により、前記デバイ長における前記ヌクレオチド残基の数が増加する場合、前記電荷が前記基準電荷より有意に低い場合、前記ステロイド化合物有りと分析でき、前記基準電荷と同じ、または前記基準電荷より有意に高い場合、前記ステロイド化合物無しと分析できる。前記ステロイド化合物の存在により、前記デバイ長における前記ヌクレオチド残基の数が減少する場合、前記電荷が前記基準電荷より有意に高い場合、前記ステロイド化合物有りと分析でき、前記基準電荷と同じ、または前記基準電荷より有意に低い場合、前記ステロイド化合物無しと分析できる。 In the steroid compound detection step, examples of the reference charge include charges in the Debye length range in the absence of the steroid compound. Then, by detecting whether the measured charge is increased or decreased compared to the reference charge, for example, the presence or absence of a steroid compound in the sample can be analyzed (qualitative), and the reference charge and the By detecting the difference in charge from the measured charge, for example, the amount of the steroid compound in the sample can be analyzed (quantified). Specifically, when the number of nucleotide residues in the Debye length increases due to the presence of the steroid compound, when the charge is significantly lower than the reference charge, the presence of the steroid compound can be analyzed, and the reference charge and If it is the same or significantly higher than the reference charge, it can be analyzed without the steroid compound. When the number of nucleotide residues in the Debye length decreases due to the presence of the steroid compound, if the charge is significantly higher than the reference charge, the presence of the steroid compound can be analyzed and is the same as the reference charge, or the If it is significantly lower than the reference charge, it can be analyzed that there is no steroid compound.
 前記ステロイド化合物検出工程において、前記基準電荷は、前記ステロイド化合物量と前記測定電荷との相関関係を示す検量線でもよい。この場合、前記ステロイド化合物検出工程では、例えば、前記測定電荷に基づき、前記試料中の前記ステロイド化合物量を算出できる。 In the steroid compound detection step, the reference charge may be a calibration curve indicating a correlation between the amount of the steroid compound and the measured charge. In this case, in the steroid compound detection step, for example, the amount of the steroid compound in the sample can be calculated based on the measured charge.
 つぎに、本発明の実施例について説明する。ただし、本発明は、下記実施例により制限されない。市販の試薬は、特に示さない限り、それらのプロトコルに基づいて使用した。 Next, examples of the present invention will be described. However, the present invention is not limited by the following examples. Commercial reagents were used based on those protocols unless otherwise indicated.
[実施例1]
 本発明の検出デバイスにより、ステロイド化合物が検出できることを確認した。
[Example 1]
It was confirmed that the steroid compound could be detected by the detection device of the present invention.
(1)検出デバイスの作製
 前記二本鎖型核酸センサ(核酸センサ(I))として、配列番号1の塩基配列からなるポリヌクレオチド(第1鎖)と配列番号2の塩基配列からなるポリヌクレオチド(第2鎖)とを合成した。また、前記一本型核酸センサ(センサ(iii))として、配列番号3の塩基配列からなるポリヌクレオチドを合成した。つぎに、イオン感応性トランジスタISFET(P. Bergfeld, “ISFET, Theory and Practice,” IEEE Sensor Conference Toronto, October 2003参照)におけるSiO、Si等のゲート絶縁膜上に、アルコキシシラン等の有機単分子膜を自己組織化法により形成した。前記有機単分子膜のアミノ基に対し、アミン反応性架橋剤であるグルタルアルデヒドOHC(CHCHOを介して、前記第1鎖および前記一本鎖型核酸センサにおけるリン酸と、C末端でエステル結合させた前記式(4)で示す非核酸配列のアミノ末端と単結合させた。なお、前記式(4)において、nは、6とした。
(1) Production of Detection Device As the double-stranded nucleic acid sensor (nucleic acid sensor (I)), a polynucleotide comprising the nucleotide sequence of SEQ ID NO: 1 (first strand) and a polynucleotide comprising the nucleotide sequence of SEQ ID NO: 2 ( Second strand). In addition, a polynucleotide comprising the nucleotide sequence of SEQ ID NO: 3 was synthesized as the single nucleic acid sensor (sensor (iii)). Next, on the gate insulating film such as SiO 2 or Si 3 N 4 in an ion sensitive transistor ISFET (see P. Bergfeld, “ISFET, Theory and Practice,” IEEE Sensor Conference Toronto, October 2003) Organic monolayer was formed by self-organization method. With respect to the amino group of the organic monomolecular film, phosphoric acid in the first-strand and single-stranded nucleic acid sensors and the C-terminus via glutaraldehyde OHC (CH 2 ) 3 CHO which is an amine-reactive cross-linking agent A single bond was made with the amino terminus of the non-nucleic acid sequence represented by the above formula (4), which was ester-linked with. In the formula (4), n is 6.
(2)コルチゾールの検出
 前記一本鎖型核酸センサが固定化された検出デバイスについては、以下のようにして、コルチゾールを検出した。前記実施例(1)で得られた前記一本鎖型核酸センサが固定化された検出デバイスに、500μLの0.04xPB3水溶液(以下、「バッファ」ともいう)を滴下し、3分後にVg(ゲート電圧)-ID(ドレイン電流)特性測定を実施し、ドレイン電流100μA時のVg(Vg)を測定した。前記バッファの組成は、5.58328mmol/L KCl、0.0588mmol/L KHPOおよび0.32408mmol/L KHPOとした。Vg-ID特性測定の条件は、下記測定条件とした。
(2) Detection of Cortisol For the detection device on which the single-stranded nucleic acid sensor was immobilized, cortisol was detected as follows. 500 μL of 0.04 × PB3 aqueous solution (hereinafter also referred to as “buffer”) was dropped into the detection device on which the single-stranded nucleic acid sensor obtained in Example (1) was immobilized, and Vg ( Gate voltage) -ID (drain current) characteristics were measured, and Vg (Vg 0 ) at a drain current of 100 μA was measured. The composition of the buffer was 5.558328 mmol / L KCl, 0.0588 mmol / L KH 2 PO 4 and 0.32408 mmol / L K 2 HPO 4 . The conditions for measuring the Vg-ID characteristics were as follows.
(Vg-ID特性測定条件)
ゲート電圧:-3V~+0.5V
ドレイン電圧:+0.1~+6.0V
ドレイン電流:100μA
(Vg-ID characteristics measurement conditions)
Gate voltage: -3V to + 0.5V
Drain voltage: +0.1 to + 6.0V
Drain current: 100 μA
 つぎに、前記バッファを除去し、所定濃度(10、50、100または1000μmol/L)のコルチゾールを含む20μLのサンプルを前記検出デバイスに滴下し、室温(約25℃)で30分間インキュベートした。前記サンプルは、前記所定濃度のコルチゾールを含むリン酸緩衝液(PBS)とした。前記インキュベート後、前記コルチゾールを含むPBSを除去し、1mLのPBSで前記検出デバイスを3回洗浄した。さらに、1mLの前記バッファで前記検出デバイスを3回洗浄した。 Next, the buffer was removed, and 20 μL of a sample containing cortisol at a predetermined concentration (10, 50, 100, or 1000 μmol / L) was dropped onto the detection device, and incubated at room temperature (about 25 ° C.) for 30 minutes. The sample was a phosphate buffer solution (PBS) containing the predetermined concentration of cortisol. After the incubation, the PBS containing the cortisol was removed, and the detection device was washed 3 times with 1 mL of PBS. Further, the detection device was washed 3 times with 1 mL of the buffer.
 そして、500μLの前記バッファを前記検出デバイスに滴下し、前述のVg-ID特性測定と同様にして、Vg(Vg)を測定した。そして、各サンプルについてVgとVgとの差分(Vg-Vg=ΔVg)を算出した。 Then, it was added dropwise the buffer of 500μL to the detection device, in the same manner as Vg-ID characteristic measurement described above was measured Vg (Vg s). Then, to calculate the difference (Vg s -Vg 0 = ΔVg) of the Vg s and Vg 0 for each sample.
 また、前記二本鎖型核酸センサは、10μmol/Lの第1鎖を含む溶液 10μLと、10μmol/Lの第2鎖を含む溶液 10μLとを混合し、得られた混合液を、前記バッファに添加し、95℃で5分間インキュベーションし、55分間室温で静置し、ゆっくりと常温にもどし、二本鎖を形成させた。そして、二本鎖形成後の核酸センサを前述のように、イオン感応性トランジスタISFETに固定化した以外は、前記一本鎖型センサと同様にして、ΔVgを算出した。これらの結果を図3および4に示す。 The double-stranded nucleic acid sensor is prepared by mixing 10 μL of a solution containing 10 μmol / L of the first strand and 10 μL of a solution containing 10 μmol / L of the second strand, and using the obtained mixed solution as the buffer. The mixture was added, incubated at 95 ° C. for 5 minutes, allowed to stand at room temperature for 55 minutes, and slowly returned to room temperature to form a double strand. Then, ΔVg was calculated in the same manner as the single-stranded sensor except that the nucleic acid sensor after the double-stranded formation was immobilized on the ion-sensitive transistor ISFET as described above. These results are shown in FIGS.
 図3は、前記一本鎖型センサを用いた際のΔVgを示すグラフである。図3において、横軸は、コルチゾールの濃度を示し、縦軸は、ΔVgを示す。図3に示すように、コルチゾールの濃度の上昇とともに、ΔVgが上昇した。すなわち、ΔVgに基づき、コルチゾールの濃度が測定できることがわかった。 FIG. 3 is a graph showing ΔVg when the single-stranded sensor is used. In FIG. 3, the horizontal axis indicates the concentration of cortisol, and the vertical axis indicates ΔVg. As shown in FIG. 3, ΔVg increased with increasing cortisol concentration. That is, it was found that the concentration of cortisol can be measured based on ΔVg.
 図4は、前記二本鎖型センサを用いた際のΔVgを示すグラフである。図4において、横軸は、コルチゾールの濃度を示し、縦軸は、ΔVgを示す。図4に示すように、コルチゾールの濃度の上昇とともに、ΔVgが減少した。すなわち、ΔVgに基づき、コルチゾールの濃度が測定できることがわかった。 FIG. 4 is a graph showing ΔVg when the double-stranded sensor is used. In FIG. 4, the horizontal axis indicates the concentration of cortisol, and the vertical axis indicates ΔVg. As shown in FIG. 4, ΔVg decreased with increasing cortisol concentration. That is, it was found that the concentration of cortisol can be measured based on ΔVg.
 以上の結果から、本発明の検出デバイスによれば、コルチゾールを含むステロイド化合物を検出できることが分かった。 From the above results, it was found that the detection device of the present invention can detect a steroid compound containing cortisol.
 以上、実施形態および実施例を参照して本発明を説明したが、本発明は上記実施形態および実施例に限定されるものではない。本発明の構成や詳細には、本発明のスコープ内で当業者が理解し得る様々な変更をすることができる。 As mentioned above, although this invention was demonstrated with reference to embodiment and an Example, this invention is not limited to the said embodiment and Example. Various changes that can be understood by those skilled in the art can be made to the configuration and details of the present invention within the scope of the present invention.
 この出願は、2017年3月27日に出願された日本出願特願2017-61808を基礎とする優先権を主張し、その開示の全てをここに取り込む。 This application claims priority based on Japanese Patent Application No. 2017-61808 filed on Mar. 27, 2017, the entire disclosure of which is incorporated herein.
<付記>
 上記の実施形態および実施例の一部または全部は、以下の付記のように記載されうるが、以下には限られない
(付記1)
ステロイド骨格含有化合物検出用核酸センサが配置されたトランジスタを含み、
前記核酸センサは、
 所定の立体構造を形成する立体形成領域(D)と前記ステロイド骨格含有化合物に結合する結合領域(A)とを有し、
 前記ステロイド骨格含有化合物非存在下、前記立体形成領域(D)は、前記立体構造の形成が阻害され、
 前記ステロイド骨格含有化合物存在下、前記結合領域(A)への前記ステロイド骨格含有化合物の接触により、前記立体形成領域(D)が前記立体構造を形成し、
前記立体構造の形成時において、
 前記ステロイド骨格含有化合物は、電解質を含む溶液中に存在し、
 前記溶液のデバイ長の範囲における前記核酸センサを構成するヌクレオチド残基の数が、前記立体構造の形成の阻害時よりも増加または減少することを特徴とする、ステロイド骨格含有化合物検出デバイス。
(付記2)
前記トランジスタは、基板、ソース電極、ドレイン電極、参照電極、および検出部を含み、
前記ソース電極、前記ドレイン電極、および前記検出部は、前記基板上に配置され、
前記検出部は、前記ソース電極と前記ドレイン電極との間に配置され、
前記核酸センサは、前記検出部に配置される、付記1記載の検出デバイス。
(付記3)
前記トランジスタが、前記デバイ長の範囲における電荷の変化を検出できるトランジスタである、付記1または2記載の検出デバイス。
(付記4)
前記核酸センサが、下記(I)の核酸センサである、付記1から3のいずれか一項に記載の検出デバイス。
(I)第1鎖(ss1)と第2鎖(ss2)とから構成される二本鎖型核酸センサであり、
前記第1鎖(ss1)は、前記立体形成領域(D)および前記結合領域(A)をこの順序で有し、
前記第2鎖(ss2)は、ステム形成領域(S)およびステム形成領域(S)をこの順序で有し、
前記ステム形成領域(S)は、前記立体形成領域(D)に対して相補的な配列を有し、
前記ステム形成領域(S)は、前記結合領域(A)に対して相補的な配列を有し、
 前記ステロイド骨格含有化合物非存在下、前記立体形成領域(D)は、前記立体構造の形成が阻害され、且つ前記第2鎖(ss2)とハイブリダイズし、
 前記ステロイド骨格含有化合物存在下、前記第1鎖(ss1)の前記結合領域(A)への前記ステロイド骨格含有化合物の接触により、前記立体形成領域(D)が前記立体構造を形成し、且つ前記第2鎖(ss2)から解離し、
前記立体構造の形成時において、
 前記デバイ長の範囲における前記核酸センサを構成するヌクレオチド残基の数が、前記立体構造の形成の阻害時よりも減少する二本鎖型核酸センサ。
(付記5)
前記(I)の核酸センサにおいて、前記第1鎖(ss1)および前記第2鎖(ss2)の一方が、前記トランジスタに配置され、
他方の鎖を試薬として含む、付記4記載の検出デバイス。
(付記6)
前記第1鎖(ss1)は、下記(a)のポリヌクレオチドを含み、
前記第2鎖(ss2)は、下記(b)のポリヌクレオチドを含む、付記4または5記載の検出デバイス。
(a)下記(a1)のポリヌクレオチド
(a1)配列番号1の塩基配列からなるポリヌクレオチド
(b)下記(b1)のポリヌクレオチド
(b1)配列番号2の塩基配列からなるポリヌクレオチド
(付記7)
前記核酸センサが、下記(II)の核酸センサである、付記1から3のいずれか一項に記載の検出デバイス。
(II)前記立体形成領域(D)および前記結合領域(A)を有する一本鎖型核酸センサであり、
 前記ステロイド骨格含有化合物非存在下、前記立体形成領域(D)は、前記立体構造の形成が阻害され、
 前記ステロイド骨格含有化合物存在下、前記結合領域(A)への前記ステロイド骨格含有化合物の接触により、前記立体形成領域(D)が前記立体構造を形成し、
前記立体構造の形成時において、
 前記デバイ長の範囲における前記核酸センサを構成するヌクレオチド残基の数が、前記立体構造の形成の阻害時よりも増加する一本鎖型核酸センサ。
(付記8)
前記(II)の核酸センサが、下記(i)~(iv)および(v)からなる群から選択された少なくとも1つの核酸センサである、付記7記載の検出デバイス。
(i)前記立体形成領域(D)、ブロッキング領域(B)、および前記結合領域(A)をこの順序で有し、
前記ブロッキング領域(B)が、前記立体形成領域(D)における部分領域(Dp)に対して相補的であり、
前記結合領域(A)における前記ブロッキング領域(B)側の末端領域(Ab)が、前記立体形成領域(D)における前記部分領域(Dp)の隣接領域(Df)に相補的であり、且つ、前記結合領域(A)における前記ブロッキング領域(B)側とは反対側の末端領域(Af)に相補的である一本鎖型核酸センサ。
(ii)前記立体形成領域(D)、ブロッキング領域(B)、前記結合領域(A)、および安定化領域(S)をこの順序で有し、
前記ブロッキング領域(B)が、前記立体形成領域(D)の部分領域(Dp)に対して相補的であり、
前記ブロッキング領域(B)の前記結合領域(A)側の末端領域(Ba)が、前記安定化領域(S)に対して相補的である一本鎖型核酸センサ。
(iii)前記立体形成領域(D)、ステム形成領域(S)、前記結合領域(A)およびステム形成領域(S)を有し、
前記ステム形成領域(S)は、前記立体形成領域(D)に対して相補的な配列を有し、
前記ステム形成領域(S)は、前記結合領域(A)に対して相補的な配列を有する一本鎖型核酸センサ。
(iv)前記立体形成領域(D)および前記結合領域(A)を有し、
前記立体形成領域(D)が、第1領域(D1)と第2領域(D2)とを含み、前記第1領域(D1)と前記第2領域(D2)とにより立体構造を形成する領域であり、
前記結合領域(A)の一方の末端側に前記第1領域(D1)を有し、前記結合領域(A)の他方の末端側に前記第2領域(D2)を有する一本鎖型核酸センサ。
(v)前記立体形成領域(D)および前記結合領域(A)をこの順序で有し、
前記立体形成領域(D)と前記結合領域(A)とが、互いに相補的な配列を有する一本鎖型核酸センサ。
(付記9)
前記(i)または(ii)の一本鎖型核酸センサにおいて、
前記立体形成領域(D)、前記ブロッキング領域(B)、および前記結合領域(A)を、5’側からこの順序で含む、付記8記載の検出デバイス。
(付記10)
前記(iii)の一本鎖型核酸センサにおいて、
ステム形成領域(St)として、ステム形成領域(S)とステム形成領域(S)とを有し、
前記立体形成領域(D)と前記ステム形成領域(S)とが、互いに相補的な配列を有し、
前記結合領域(A)と前記ステム形成領域(S)とが、互いに相補的な配列を含む、付記8記載の検出デバイス。
(付記11)
前記(iii)の一本鎖型核酸センサにおいて、前記立体形成領域(D)、前記ステム形成領域(S)、前記結合領域(A)および前記ステム形成領域(S)が、下記(1)、(2)、(3)または(4)の順序で連結されている、付記8記載の検出デバイス。
(1) 前記結合領域(A)、前記ステム形成領域(S)、前記立体形成領域(D)および前記ステム形成領域(S)の順序
(2) 前記ステム形成領域(S)、前記立体形成領域(D)、前記ステム形成領域(S)および前記結合領域(A)の順序
(3) 前記立体形成領域(D)、前記ステム形成領域(S)、前記結合領域(A)および前記ステム形成領域(S)の順序
(4) 前記ステム形成領域(S)、前記結合領域(A)、前記ステム形成領域(S)および前記立体形成領域(D)の順序
(付記12)
前記(iii)の一本鎖型核酸センサは、下記(c)のポリヌクレオチドを含む、付記11記載の検出デバイス。
(c)下記(c1)のポリヌクレオチド
(c1)配列番号3の塩基配列からなるポリヌクレオチド
(付記13)
前記(iv)の一本鎖型核酸センサにおいて、
前記第1領域(D1)と前記第2領域(D2)とが、
それぞれ、前記結合領域(A)の位置とは反対側の末端に、互いに相補的な配列を含む、付記8記載の検出デバイス。
(付記14)
前記(v)の一本鎖型核酸センサにおいて、
前記立体形成領域(D)の5’側からの配列と、前記結合領域(A)の3’側からの配列とが、互いに相補的な配列を有する、付記8記載の検出デバイス。
(付記15)
前記立体形成領域(D)は、G-カルテット構造を形成するG形成領域(G)であり、
前記立体構造は、G-カルテット構造である、付記1から14のいずれか一項に記載の検出デバイス。
(付記16)
前記立体形成領域(D)と前記結合領域(A)との間に、リンカー領域を有する、付記1から15のいずれか一項に記載の検出デバイス。
(付記17)
前記核酸センサが、リンカー領域を介して前記トランジスタに連結されている、付記1から16のいずれか一項に記載の検出デバイス。
(付記18)
付記1から17のいずれか一項に記載の検出デバイスに試料を接触させる接触工程、および
前記検出デバイスのデバイ長の範囲における核酸センサを構成するヌクレオチド残基の数の増加または減少を検出することによって、前記試料中のステロイド骨格含有化合物を検出する検出工程を含むことを特徴とする、ステロイド骨格含有化合物の検出方法。
(付記19)
付記5記載の検出デバイスを使用し、
前記試料と前記試薬とを混合する混合工程、
前記検出デバイスに得られた混合物を接触させる接触工程、および
前記検出デバイスのデバイ長の範囲における核酸センサを構成するヌクレオチド残基の数の増加または減少を検出することによって、前記試料中の前記ステロイド骨格含有化合物を検出する検出工程を含む、付記18記載の検出方法。
(付記20)
前記検出工程が、
前記検出デバイスにより、前記検出デバイスのデバイ長の範囲における電荷を測定する電荷測定工程と、
前記電荷および基準電荷に基づき、前記デバイ長の範囲における前記ヌクレオチド残基の数の増加または減少を検出し、前記ステロイド骨格含有化合物を検出するステロイド骨格含有化合物検出工程とを含む、付記18または19記載の検出方法。
(付記21)
前記電荷の測定が、電気シグナルの測定である、付記20記載の検出方法。
(付記22)
前記電気シグナルが、電圧および電流の少なくとも一方である、付記21記載の検出方法。
<Appendix>
A part or all of the above embodiments and examples can be described as, but not limited to, the following supplementary notes (Appendix 1)
Including a transistor in which a nucleic acid sensor for detecting a steroid skeleton-containing compound is disposed;
The nucleic acid sensor is
A stereogenic region (D) that forms a predetermined stereostructure and a binding region (A) that binds to the steroid skeleton-containing compound;
In the absence of the steroid skeleton-containing compound, the stereogenic region (D) is inhibited from forming the stereostructure,
In the presence of the steroid skeleton-containing compound, by the contact of the steroid skeleton-containing compound with the binding region (A), the three-dimensional formation region (D) forms the three-dimensional structure,
During the formation of the three-dimensional structure,
The steroid skeleton-containing compound is present in a solution containing an electrolyte,
A device for detecting a steroid skeleton-containing compound, wherein the number of nucleotide residues constituting the nucleic acid sensor in the Debye length range of the solution is increased or decreased as compared with the inhibition of the formation of the three-dimensional structure.
(Appendix 2)
The transistor includes a substrate, a source electrode, a drain electrode, a reference electrode, and a detection unit,
The source electrode, the drain electrode, and the detection unit are disposed on the substrate,
The detection unit is disposed between the source electrode and the drain electrode,
The detection device according to appendix 1, wherein the nucleic acid sensor is disposed in the detection unit.
(Appendix 3)
The detection device according to appendix 1 or 2, wherein the transistor is a transistor capable of detecting a change in charge in the Debye length range.
(Appendix 4)
The detection device according to any one of appendices 1 to 3, wherein the nucleic acid sensor is a nucleic acid sensor of the following (I).
(I) a double-stranded nucleic acid sensor composed of a first strand (ss1) and a second strand (ss2);
The first strand (ss1) has the three-dimensional region (D) and the binding region (A) in this order,
The second strand (ss2) has a stem forming region (S D ) and a stem forming region (S A ) in this order,
The stem forming region (S D ) has a sequence complementary to the three-dimensional forming region (D),
The stem forming region (S A ) has a sequence complementary to the binding region (A),
In the absence of the steroid skeleton-containing compound, the stereogenic region (D) is inhibited from forming the stereostructure and hybridizes with the second chain (ss2),
In the presence of the steroid skeleton-containing compound, the three-dimensional formation region (D) forms the three-dimensional structure by contacting the steroid skeleton-containing compound with the binding region (A) of the first chain (ss1), and Dissociates from the second strand (ss2),
During the formation of the three-dimensional structure,
A double-stranded nucleic acid sensor in which the number of nucleotide residues constituting the nucleic acid sensor in the Debye length range is smaller than that in the inhibition of formation of the three-dimensional structure.
(Appendix 5)
In the nucleic acid sensor of (I), one of the first strand (ss1) and the second strand (ss2) is disposed in the transistor,
The detection device according to appendix 4, comprising the other chain as a reagent.
(Appendix 6)
The first strand (ss1) includes the following polynucleotide (a):
The detection device according to appendix 4 or 5, wherein the second strand (ss2) includes a polynucleotide of the following (b).
(A) polynucleotide (a1) below (a1) polynucleotide consisting of the base sequence of SEQ ID NO: 1 (b) polynucleotide (b1) below (b1) polynucleotide consisting of the base sequence of SEQ ID NO: 2 (Appendix 7)
The detection device according to any one of appendices 1 to 3, wherein the nucleic acid sensor is a nucleic acid sensor of the following (II).
(II) a single-stranded nucleic acid sensor having the three-dimensional formation region (D) and the binding region (A),
In the absence of the steroid skeleton-containing compound, the stereogenic region (D) is inhibited from forming the stereostructure,
In the presence of the steroid skeleton-containing compound, by the contact of the steroid skeleton-containing compound with the binding region (A), the three-dimensional formation region (D) forms the three-dimensional structure,
During the formation of the three-dimensional structure,
A single-stranded nucleic acid sensor, wherein the number of nucleotide residues constituting the nucleic acid sensor in the Debye length range is greater than that at the time of inhibiting the formation of the three-dimensional structure.
(Appendix 8)
The detection device according to appendix 7, wherein the nucleic acid sensor (II) is at least one nucleic acid sensor selected from the group consisting of the following (i) to (iv) and (v).
(I) having the three-dimensional formation region (D), the blocking region (B), and the binding region (A) in this order;
The blocking region (B) is complementary to a partial region (Dp) in the three-dimensional region (D);
A terminal region (Ab) on the blocking region (B) side in the binding region (A) is complementary to a region (Df) adjacent to the partial region (Dp) in the three-dimensional formation region (D), and A single-stranded nucleic acid sensor which is complementary to a terminal region (Af) opposite to the blocking region (B) in the binding region (A).
(Ii) having the three-dimensional formation region (D), the blocking region (B), the binding region (A), and the stabilization region (S) in this order;
The blocking region (B) is complementary to a partial region (Dp) of the three-dimensional formation region (D);
A single-stranded nucleic acid sensor, wherein a terminal region (Ba) on the binding region (A) side of the blocking region (B) is complementary to the stabilization region (S).
(Iii) having the three-dimensional formation region (D), the stem formation region (S D ), the binding region (A), and the stem formation region (S A ),
The stem forming region (S D ) has a sequence complementary to the three-dimensional forming region (D),
The stem-forming region (S A ) is a single-stranded nucleic acid sensor having a sequence complementary to the binding region (A).
(Iv) having the three-dimensional formation region (D) and the binding region (A);
The three-dimensional formation region (D) includes a first region (D1) and a second region (D2), and forms a three-dimensional structure with the first region (D1) and the second region (D2). Yes,
A single-stranded nucleic acid sensor having the first region (D1) on one end side of the binding region (A) and the second region (D2) on the other end side of the binding region (A) .
(V) having the three-dimensional formation region (D) and the binding region (A) in this order;
The single-stranded nucleic acid sensor in which the three-dimensional region (D) and the binding region (A) have complementary sequences.
(Appendix 9)
In the above-mentioned (i) or (ii) single-stranded nucleic acid sensor,
The detection device according to supplementary note 8, including the three-dimensional formation region (D), the blocking region (B), and the binding region (A) in this order from the 5 ′ side.
(Appendix 10)
In the single-stranded nucleic acid sensor (iii),
As the stem formation region (St), it has a stem formation region (S D ) and a stem formation region (S A ),
The three-dimensional formation region (D) and the stem formation region (S D ) have mutually complementary sequences,
The detection device according to appendix 8, wherein the binding region (A) and the stem formation region (S A ) include sequences complementary to each other.
(Appendix 11)
In the single-stranded nucleic acid sensor of (iii), the three-dimensional formation region (D), the stem formation region (S D ), the binding region (A), and the stem formation region (S A ) are the following (1 ), (2), (3) or the detection device according to appendix 8, which is linked in the order (4).
(1) Order of the binding region (A), the stem formation region (S D ), the solid formation region (D), and the stem formation region (S A ) (2) The stem formation region (S A ), Order of the three-dimensional formation region (D), the stem formation region (S D ), and the binding region (A) (3) The three-dimensional formation region (D), the stem formation region (S A ), the binding region (A) And order of the stem formation region (S D ) (4) order of the stem formation region (S D ), the binding region (A), the stem formation region (S A ), and the three-dimensional formation region (D) (Notes) 12)
The detection device according to appendix 11, wherein the single-stranded nucleic acid sensor (iii) includes a polynucleotide (c) below.
(C) a polynucleotide of the following (c1) (c1) a polynucleotide comprising the base sequence of SEQ ID NO: 3 (Appendix 13)
In the single-stranded nucleic acid sensor (iv),
The first region (D1) and the second region (D2) are:
The detection device according to appendix 8, wherein the detection devices each include a sequence complementary to each other at the end opposite to the position of the binding region (A).
(Appendix 14)
In the (v) single-stranded nucleic acid sensor,
The detection device according to appendix 8, wherein the sequence from the 5 'side of the three-dimensional formation region (D) and the sequence from the 3' side of the binding region (A) have complementary sequences to each other.
(Appendix 15)
The three-dimensional formation region (D) is a G formation region (G) forming a G-quartet structure,
15. The detection device according to any one of appendices 1 to 14, wherein the three-dimensional structure is a G-quartet structure.
(Appendix 16)
The detection device according to any one of appendices 1 to 15, having a linker region between the three-dimensional formation region (D) and the binding region (A).
(Appendix 17)
The detection device according to any one of appendices 1 to 16, wherein the nucleic acid sensor is connected to the transistor via a linker region.
(Appendix 18)
A contact step of bringing a sample into contact with the detection device according to any one of appendices 1 to 17, and detecting an increase or decrease in the number of nucleotide residues constituting the nucleic acid sensor in the range of the Debye length of the detection device The detection method of detecting the steroid frame | skeleton containing compound in the said sample is included, The detection method of the steroid frame | skeleton containing compound characterized by the above-mentioned.
(Appendix 19)
Using the detection device described in Appendix 5,
A mixing step of mixing the sample and the reagent;
Contacting the resulting mixture with the detection device, and detecting the increase or decrease in the number of nucleotide residues constituting the nucleic acid sensor in the Debye length range of the detection device, thereby the steroid in the sample The detection method according to appendix 18, including a detection step of detecting a skeleton-containing compound.
(Appendix 20)
The detection step comprises
A charge measuring step of measuring a charge in a debye length range of the detection device by the detection device;
Supplementary note 18 or 19, comprising detecting an increase or decrease in the number of the nucleotide residues in the Debye length range based on the charge and the reference charge, and detecting the steroid skeleton-containing compound. The detection method described.
(Appendix 21)
The detection method according to appendix 20, wherein the charge measurement is an electric signal measurement.
(Appendix 22)
The detection method according to appendix 21, wherein the electrical signal is at least one of voltage and current.
 本発明の検出デバイスによれば、コルチゾールを含むステロイド骨格含有化合物を検出できる。このため、本発明は、例えば、臨床医療、食品、環境等の様々な分野における研究および検査に、極めて有用な技術といえる。 According to the detection device of the present invention, a steroid skeleton-containing compound containing cortisol can be detected. For this reason, the present invention can be said to be an extremely useful technique for research and examination in various fields such as clinical medicine, food, and environment.

Claims (22)

  1. ステロイド骨格含有化合物検出用核酸センサが配置されたトランジスタを含み、
    前記核酸センサは、
     所定の立体構造を形成する立体形成領域(D)と前記ステロイド骨格含有化合物に結合する結合領域(A)とを有し、
     前記ステロイド骨格含有化合物非存在下、前記立体形成領域(D)は、前記立体構造の形成が阻害され、
     前記ステロイド骨格含有化合物存在下、前記結合領域(A)への前記ステロイド骨格含有化合物の接触により、前記立体形成領域(D)が前記立体構造を形成し、
    前記立体構造の形成時において、
     前記ステロイド骨格含有化合物は、電解質を含む溶液中に存在し、
     前記溶液のデバイ長の範囲における前記核酸センサを構成するヌクレオチド残基の数が、前記立体構造の形成の阻害時よりも増加または減少することを特徴とする、ステロイド骨格含有化合物検出デバイス。
    Including a transistor in which a nucleic acid sensor for detecting a steroid skeleton-containing compound is disposed;
    The nucleic acid sensor is
    A stereogenic region (D) that forms a predetermined stereostructure and a binding region (A) that binds to the steroid skeleton-containing compound;
    In the absence of the steroid skeleton-containing compound, the stereogenic region (D) is inhibited from forming the stereostructure,
    In the presence of the steroid skeleton-containing compound, by the contact of the steroid skeleton-containing compound with the binding region (A), the three-dimensional formation region (D) forms the three-dimensional structure,
    During the formation of the three-dimensional structure,
    The steroid skeleton-containing compound is present in a solution containing an electrolyte,
    A device for detecting a steroid skeleton-containing compound, wherein the number of nucleotide residues constituting the nucleic acid sensor in the Debye length range of the solution is increased or decreased as compared with the inhibition of the formation of the three-dimensional structure.
  2. 前記トランジスタは、基板、ソース電極、ドレイン電極、参照電極、および検出部を含み、
    前記ソース電極、前記ドレイン電極、および前記検出部は、前記基板上に配置され、
    前記検出部は、前記ソース電極と前記ドレイン電極との間に配置され、
    前記核酸センサは、前記検出部に配置される、請求項1記載の検出デバイス。
    The transistor includes a substrate, a source electrode, a drain electrode, a reference electrode, and a detection unit,
    The source electrode, the drain electrode, and the detection unit are disposed on the substrate,
    The detection unit is disposed between the source electrode and the drain electrode,
    The detection device according to claim 1, wherein the nucleic acid sensor is disposed in the detection unit.
  3. 前記トランジスタが、前記デバイ長の範囲における電荷の変化を検出できるトランジスタである、請求項1または2記載の検出デバイス。 The detection device according to claim 1, wherein the transistor is a transistor capable of detecting a change in charge in the Debye length range.
  4. 前記核酸センサが、下記(I)の核酸センサである、請求項1から3のいずれか一項に記載の検出デバイス。
    (I)第1鎖(ss1)と第2鎖(ss2)とから構成される二本鎖型核酸センサであり、
    前記第1鎖(ss1)は、前記立体形成領域(D)および前記結合領域(A)をこの順序で有し、
    前記第2鎖(ss2)は、ステム形成領域(S)およびステム形成領域(S)をこの順序で有し、
    前記ステム形成領域(S)は、前記立体形成領域(D)に対して相補的な配列を有し、
    前記ステム形成領域(S)は、前記結合領域(A)に対して相補的な配列を有し、
     前記ステロイド骨格含有化合物非存在下、前記立体形成領域(D)は、前記立体構造の形成が阻害され、且つ前記第2鎖(ss2)とハイブリダイズし、
     前記ステロイド骨格含有化合物存在下、前記第1鎖(ss1)の前記結合領域(A)への前記ステロイド骨格含有化合物の接触により、前記立体形成領域(D)が前記立体構造を形成し、且つ前記第2鎖(ss2)から解離し、
    前記立体構造の形成時において、
     前記デバイ長の範囲における前記核酸センサを構成するヌクレオチド残基の数が、前記立体構造の形成の阻害時よりも減少する二本鎖型核酸センサ。
    The detection device according to any one of claims 1 to 3, wherein the nucleic acid sensor is the following nucleic acid sensor (I).
    (I) a double-stranded nucleic acid sensor composed of a first strand (ss1) and a second strand (ss2);
    The first strand (ss1) has the three-dimensional region (D) and the binding region (A) in this order,
    The second strand (ss2) has a stem forming region (S D ) and a stem forming region (S A ) in this order,
    The stem forming region (S D ) has a sequence complementary to the three-dimensional forming region (D),
    The stem forming region (S A ) has a sequence complementary to the binding region (A),
    In the absence of the steroid skeleton-containing compound, the stereogenic region (D) is inhibited from forming the stereostructure and hybridizes with the second chain (ss2),
    In the presence of the steroid skeleton-containing compound, the three-dimensional formation region (D) forms the three-dimensional structure by contacting the steroid skeleton-containing compound with the binding region (A) of the first chain (ss1), and Dissociates from the second strand (ss2),
    During the formation of the three-dimensional structure,
    A double-stranded nucleic acid sensor in which the number of nucleotide residues constituting the nucleic acid sensor in the Debye length range is smaller than that in the inhibition of formation of the three-dimensional structure.
  5. 前記(I)の核酸センサにおいて、前記第1鎖(ss1)および前記第2鎖(ss2)の一方が、前記トランジスタに配置され、
    他方の鎖を試薬として含む、請求項4記載の検出デバイス。
    In the nucleic acid sensor of (I), one of the first strand (ss1) and the second strand (ss2) is disposed in the transistor,
    The detection device according to claim 4, comprising the other chain as a reagent.
  6. 前記第1鎖(ss1)は、下記(a)のポリヌクレオチドを含み、
    前記第2鎖(ss2)は、下記(b)のポリヌクレオチドを含む、請求項4または5記載の検出デバイス。
    (a)下記(a1)のポリヌクレオチド
    (a1)配列番号1の塩基配列からなるポリヌクレオチド
    (b)下記(b1)のポリヌクレオチド
    (b1)配列番号2の塩基配列からなるポリヌクレオチド
    The first strand (ss1) includes the following polynucleotide (a):
    The detection device according to claim 4 or 5, wherein the second strand (ss2) comprises a polynucleotide of the following (b).
    (A) a polynucleotide of (a1) below (a1) a polynucleotide comprising the base sequence of SEQ ID NO: 1 (b) a polynucleotide of (b1) below (b1) a polynucleotide comprising the base sequence of SEQ ID NO: 2
  7. 前記核酸センサが、下記(II)の核酸センサである、請求項1から3のいずれか一項に記載の検出デバイス。
    (II)前記立体形成領域(D)および前記結合領域(A)を有する一本鎖型核酸センサであり、
     前記ステロイド骨格含有化合物非存在下、前記立体形成領域(D)は、前記立体構造の形成が阻害され、
     前記ステロイド骨格含有化合物存在下、前記結合領域(A)への前記ステロイド骨格含有化合物の接触により、前記立体形成領域(D)が前記立体構造を形成し、
    前記立体構造の形成時において、
     前記デバイ長の範囲における前記核酸センサを構成するヌクレオチド残基の数が、前記立体構造の形成の阻害時よりも増加する一本鎖型核酸センサ。
    The detection device according to any one of claims 1 to 3, wherein the nucleic acid sensor is the following nucleic acid sensor (II).
    (II) a single-stranded nucleic acid sensor having the three-dimensional formation region (D) and the binding region (A),
    In the absence of the steroid skeleton-containing compound, the stereogenic region (D) is inhibited from forming the stereostructure,
    In the presence of the steroid skeleton-containing compound, by the contact of the steroid skeleton-containing compound with the binding region (A), the three-dimensional formation region (D) forms the three-dimensional structure,
    During the formation of the three-dimensional structure,
    A single-stranded nucleic acid sensor, wherein the number of nucleotide residues constituting the nucleic acid sensor in the Debye length range is greater than that at the time of inhibiting the formation of the three-dimensional structure.
  8. 前記(II)の核酸センサが、下記(i)~(iv)および(v)からなる群から選択された少なくとも1つの核酸センサである、請求項7記載の検出デバイス。
    (i)前記立体形成領域(D)、ブロッキング領域(B)、および前記結合領域(A)をこの順序で有し、
    前記ブロッキング領域(B)が、前記立体形成領域(D)における部分領域(Dp)に対して相補的であり、
    前記結合領域(A)における前記ブロッキング領域(B)側の末端領域(Ab)が、前記立体形成領域(D)における前記部分領域(Dp)の隣接領域(Df)に相補的であり、且つ、前記結合領域(A)における前記ブロッキング領域(B)側とは反対側の末端領域(Af)に相補的である一本鎖型核酸センサ。
    (ii)前記立体形成領域(D)、ブロッキング領域(B)、前記結合領域(A)、および安定化領域(S)をこの順序で有し、
    前記ブロッキング領域(B)が、前記立体形成領域(D)の部分領域(Dp)に対して相補的であり、
    前記ブロッキング領域(B)の前記結合領域(A)側の末端領域(Ba)が、前記安定化領域(S)に対して相補的である一本鎖型核酸センサ。
    (iii)前記立体形成領域(D)、ステム形成領域(S)、前記結合領域(A)およびステム形成領域(S)を有し、
    前記ステム形成領域(S)は、前記立体形成領域(D)に対して相補的な配列を有し、
    前記ステム形成領域(S)は、前記結合領域(A)に対して相補的な配列を有する一本鎖型核酸センサ。
    (iv)前記立体形成領域(D)および前記結合領域(A)を有し、
    前記立体形成領域(D)が、第1領域(D1)と第2領域(D2)とを含み、前記第1領域(D1)と前記第2領域(D2)とにより立体構造を形成する領域であり、
    前記結合領域(A)の一方の末端側に前記第1領域(D1)を有し、前記結合領域(A)の他方の末端側に前記第2領域(D2)を有する一本鎖型核酸センサ。
    (v)前記立体形成領域(D)および前記結合領域(A)をこの順序で有し、
    前記立体形成領域(D)と前記結合領域(A)とが、互いに相補的な配列を有する一本鎖型核酸センサ。
    The detection device according to claim 7, wherein the nucleic acid sensor (II) is at least one nucleic acid sensor selected from the group consisting of the following (i) to (iv) and (v).
    (I) having the three-dimensional formation region (D), the blocking region (B), and the binding region (A) in this order;
    The blocking region (B) is complementary to a partial region (Dp) in the three-dimensional region (D);
    A terminal region (Ab) on the blocking region (B) side in the binding region (A) is complementary to a region (Df) adjacent to the partial region (Dp) in the three-dimensional formation region (D), and A single-stranded nucleic acid sensor which is complementary to a terminal region (Af) opposite to the blocking region (B) in the binding region (A).
    (Ii) having the three-dimensional formation region (D), the blocking region (B), the binding region (A), and the stabilization region (S) in this order;
    The blocking region (B) is complementary to a partial region (Dp) of the three-dimensional formation region (D);
    A single-stranded nucleic acid sensor, wherein a terminal region (Ba) on the binding region (A) side of the blocking region (B) is complementary to the stabilization region (S).
    (Iii) having the three-dimensional formation region (D), the stem formation region (S D ), the binding region (A), and the stem formation region (S A ),
    The stem forming region (S D ) has a sequence complementary to the three-dimensional forming region (D),
    The stem-forming region (S A ) is a single-stranded nucleic acid sensor having a sequence complementary to the binding region (A).
    (Iv) having the three-dimensional formation region (D) and the binding region (A);
    The three-dimensional formation region (D) includes a first region (D1) and a second region (D2), and forms a three-dimensional structure with the first region (D1) and the second region (D2). Yes,
    A single-stranded nucleic acid sensor having the first region (D1) on one end side of the binding region (A) and the second region (D2) on the other end side of the binding region (A) .
    (V) having the three-dimensional formation region (D) and the binding region (A) in this order;
    The single-stranded nucleic acid sensor in which the three-dimensional region (D) and the binding region (A) have complementary sequences.
  9. 前記(i)または(ii)の一本鎖型核酸センサにおいて、
    前記立体形成領域(D)、前記ブロッキング領域(B)、および前記結合領域(A)を、5’側からこの順序で含む、請求項8記載の検出デバイス。
    In the above-mentioned (i) or (ii) single-stranded nucleic acid sensor,
    The detection device according to claim 8, comprising the three-dimensional formation region (D), the blocking region (B), and the binding region (A) in this order from the 5 'side.
  10. 前記(iii)の一本鎖型核酸センサにおいて、
    ステム形成領域(St)として、ステム形成領域(S)とステム形成領域(S)とを有し、
    前記立体形成領域(D)と前記ステム形成領域(S)とが、互いに相補的な配列を有し、
    前記結合領域(A)と前記ステム形成領域(S)とが、互いに相補的な配列を含む、請求項8記載の検出デバイス。
    In the single-stranded nucleic acid sensor (iii),
    As the stem formation region (St), it has a stem formation region (S D ) and a stem formation region (S A ),
    The three-dimensional formation region (D) and the stem formation region (S D ) have mutually complementary sequences,
    The detection device according to claim 8, wherein the binding region (A) and the stem-forming region (S A ) comprise sequences complementary to each other.
  11. 前記(iii)の一本鎖型核酸センサにおいて、前記立体形成領域(D)、前記ステム形成領域(S)、前記結合領域(A)および前記ステム形成領域(S)が、下記(1)、(2)、(3)または(4)の順序で連結されている、請求項8記載の検出デバイス。
    (1) 前記結合領域(A)、前記ステム形成領域(S)、前記立体形成領域(D)および前記ステム形成領域(S)の順序
    (2) 前記ステム形成領域(S)、前記立体形成領域(D)、前記ステム形成領域(S)および前記結合領域(A)の順序
    (3) 前記立体形成領域(D)、前記ステム形成領域(S)、前記結合領域(A)および前記ステム形成領域(S)の順序
    (4) 前記ステム形成領域(S)、前記結合領域(A)、前記ステム形成領域(S)および前記立体形成領域(D)の順序
    In the single-stranded nucleic acid sensor of (iii), the three-dimensional formation region (D), the stem formation region (S D ), the binding region (A), and the stem formation region (S A ) are the following (1 ), (2), (3) or (4) are connected in the order of detection devices according to claim 8.
    (1) Order of the binding region (A), the stem formation region (S D ), the solid formation region (D), and the stem formation region (S A ) (2) The stem formation region (S A ), Order of the three-dimensional formation region (D), the stem formation region (S D ), and the binding region (A) (3) The three-dimensional formation region (D), the stem formation region (S A ), the binding region (A) And the order of the stem formation region (S D ) (4) The order of the stem formation region (S D ), the binding region (A), the stem formation region (S A ), and the solid formation region (D)
  12. 前記(iii)の一本鎖型核酸センサは、下記(c)のポリヌクレオチドを含む、請求項11記載の検出デバイス。
    (c)下記(c1)のポリヌクレオチド
    (c1)配列番号3の塩基配列からなるポリヌクレオチド
    The detection device according to claim 11, wherein the single-stranded nucleic acid sensor (iii) includes a polynucleotide (c) below.
    (C) a polynucleotide of the following (c1) (c1) a polynucleotide comprising the nucleotide sequence of SEQ ID NO: 3
  13. 前記(iv)の一本鎖型核酸センサにおいて、
    前記第1領域(D1)と前記第2領域(D2)とが、
    それぞれ、前記結合領域(A)の位置とは反対側の末端に、互いに相補的な配列を含む、請求項8記載の検出デバイス。
    In the single-stranded nucleic acid sensor (iv),
    The first region (D1) and the second region (D2) are:
    The detection device according to claim 8, comprising sequences complementary to each other at a terminal opposite to the position of the binding region (A).
  14. 前記(v)の一本鎖型核酸センサにおいて、
    前記立体形成領域(D)の5’側からの配列と、前記結合領域(A)の3’側からの配列とが、互いに相補的な配列を有する、請求項8記載の検出デバイス。
    In the (v) single-stranded nucleic acid sensor,
    The detection device according to claim 8, wherein the sequence from the 5 'side of the three-dimensional formation region (D) and the sequence from the 3' side of the binding region (A) have complementary sequences to each other.
  15. 前記立体形成領域(D)は、G-カルテット構造を形成するG形成領域(G)であり、
    前記立体構造は、G-カルテット構造である、請求項1から14のいずれか一項に記載の検出デバイス。
    The three-dimensional formation region (D) is a G formation region (G) forming a G-quartet structure,
    The detection device according to any one of claims 1 to 14, wherein the three-dimensional structure is a G-quartet structure.
  16. 前記立体形成領域(D)と前記結合領域(A)との間に、リンカー領域を有する、請求項1から15のいずれか一項に記載の検出デバイス。 The detection device according to any one of claims 1 to 15, further comprising a linker region between the three-dimensional formation region (D) and the binding region (A).
  17. 前記核酸センサが、リンカー領域を介して前記トランジスタに連結されている、請求項1から16のいずれか一項に記載の検出デバイス。 The detection device according to any one of claims 1 to 16, wherein the nucleic acid sensor is connected to the transistor via a linker region.
  18. 請求項1から17のいずれか一項に記載の検出デバイスに試料を接触させる接触工程、および
    前記検出デバイスのデバイ長の範囲における核酸センサを構成するヌクレオチド残基の数の増加または減少を検出することによって、前記試料中のステロイド骨格含有化合物を検出する検出工程を含むことを特徴とする、ステロイド骨格含有化合物の検出方法。
    A contact step of contacting a sample with the detection device according to any one of claims 1 to 17, and an increase or decrease in the number of nucleotide residues constituting a nucleic acid sensor in a range of the Debye length of the detection device is detected. A detection method for detecting a steroid skeleton-containing compound in the sample, comprising the step of detecting the steroid skeleton-containing compound in the sample.
  19. 請求項5記載の検出デバイスを使用し、
    前記試料と前記試薬とを混合する混合工程、
    前記検出デバイスに得られた混合物を接触させる接触工程、および
    前記検出デバイスのデバイ長の範囲における核酸センサを構成するヌクレオチド残基の数の増加または減少を検出することによって、前記試料中の前記ステロイド骨格含有化合物を検出する検出工程を含む、請求項18記載の検出方法。
    Using the detection device of claim 5,
    A mixing step of mixing the sample and the reagent;
    Contacting the resulting mixture with the detection device, and detecting the increase or decrease in the number of nucleotide residues constituting the nucleic acid sensor in the Debye length range of the detection device, thereby the steroid in the sample The detection method according to claim 18, further comprising a detection step of detecting a skeleton-containing compound.
  20. 前記検出工程が、
    前記検出デバイスにより、前記検出デバイスのデバイ長の範囲における電荷を測定する電荷測定工程と、
    前記電荷および基準電荷に基づき、前記デバイ長の範囲における前記ヌクレオチド残基の数の増加または減少を検出し、前記ステロイド骨格含有化合物を検出するステロイド骨格含有化合物検出工程とを含む、請求項18または19記載の検出方法。
    The detection step comprises
    A charge measuring step of measuring a charge in a debye length range of the detection device by the detection device;
    A steroid skeleton-containing compound detection step of detecting an increase or decrease in the number of the nucleotide residues in the Debye length range based on the charge and the reference charge, and detecting the steroid skeleton-containing compound. 19. The detection method according to 19.
  21. 前記電荷の測定が、電気シグナルの測定である、請求項20記載の検出方法。 The detection method according to claim 20, wherein the measurement of the electric charge is measurement of an electric signal.
  22. 前記電気シグナルが、電圧および電流の少なくとも一方である、請求項21記載の検出方法。 The detection method according to claim 21, wherein the electrical signal is at least one of a voltage and a current.
PCT/JP2017/034996 2017-03-27 2017-09-27 Steroid-skeleton-containing-compound detecting device and steroid-skeleton-containing-compound detecting method using same WO2018179514A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2019508523A JP6823244B2 (en) 2017-03-27 2017-09-27 Steroid skeleton-containing compound detection device and method for detecting steroid skeleton-containing compounds using the device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-061808 2017-03-27
JP2017061808 2017-03-27

Publications (1)

Publication Number Publication Date
WO2018179514A1 true WO2018179514A1 (en) 2018-10-04

Family

ID=63677658

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2017/034996 WO2018179514A1 (en) 2017-03-27 2017-09-27 Steroid-skeleton-containing-compound detecting device and steroid-skeleton-containing-compound detecting method using same

Country Status (2)

Country Link
JP (1) JP6823244B2 (en)
WO (1) WO2018179514A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021032607A (en) * 2019-08-20 2021-03-01 学校法人早稲田大学 Aptamer fixing semiconductor sensing device and non-charged molecule detection method
JP2021076529A (en) * 2019-11-12 2021-05-20 学校法人早稲田大学 Aptamer immobilization semiconductor sensing device and method for detecting uncharged molecules

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013014843A1 (en) * 2011-07-25 2013-01-31 日本電気株式会社 Method for detecting target substance, sensor chip, and detection device
JP2015501934A (en) * 2011-11-23 2015-01-19 ザ ガバニング カウンシル オブ ザ ユニバーシティ オブ トロント Versatile and sensitive biosensor
WO2017098746A1 (en) * 2015-12-11 2017-06-15 Necソリューションイノベータ株式会社 Sensor for cortisol analysis, method for cortisol analysis, reagent for stress evaluation, method for stress evaluation, test reagent for cortisol-related disease, and test method for contraction risk of cortisol-related disease

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013014843A1 (en) * 2011-07-25 2013-01-31 日本電気株式会社 Method for detecting target substance, sensor chip, and detection device
JP2015501934A (en) * 2011-11-23 2015-01-19 ザ ガバニング カウンシル オブ ザ ユニバーシティ オブ トロント Versatile and sensitive biosensor
WO2017098746A1 (en) * 2015-12-11 2017-06-15 Necソリューションイノベータ株式会社 Sensor for cortisol analysis, method for cortisol analysis, reagent for stress evaluation, method for stress evaluation, test reagent for cortisol-related disease, and test method for contraction risk of cortisol-related disease

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
KANEKO, NAOTO ET AL.: "Aptamer-based biosensors for rapid detection of stress markers", ISNAC2016 THE 43RD INTERNATIONAL SYMPOSIUM ON NUCLEIC ACIDS CHEMISTRY 2016 PROGRAM & ABSTRACTS, 2016, pages 346 - 347 *
OHASHI, K. ET AL.: "Industrialization Trial of a Biosensor Technology", ECS TRANSACTIONS, vol. 75, no. 39, 20 January 2017 (2017-01-20), pages 1 - 9, XP055541333 *
ZAYATS, MAYA ET AL.: "Label-Free and Reagentless Aptamer-Based Sensors for Small Molecules", J. AM. CHEM. SOC., vol. 128, no. 42, 2006, pages 13666 - 13667, XP055124154 *
ZHU, BICHENG ET AL.: "Label-free electrochemical aptasensor for femtomolar detection of 17ß- estradiol", BIOSENSORS AND BIOELECTRONICS, vol. 70, 2015, pages 398 - 403, XP029610559 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021032607A (en) * 2019-08-20 2021-03-01 学校法人早稲田大学 Aptamer fixing semiconductor sensing device and non-charged molecule detection method
JP2021076529A (en) * 2019-11-12 2021-05-20 学校法人早稲田大学 Aptamer immobilization semiconductor sensing device and method for detecting uncharged molecules
JP7276774B2 (en) 2019-11-12 2023-05-18 学校法人早稲田大学 Aptamer-immobilized semiconductor sensing device and method for detecting uncharged molecules

Also Published As

Publication number Publication date
JP6823244B2 (en) 2021-02-03
JPWO2018179514A1 (en) 2019-11-21

Similar Documents

Publication Publication Date Title
US9335292B2 (en) Electrochemical proximity assay
RU2678996C2 (en) Process for detection of dna modifications and protein binding by single molecules manipulation
Bi et al. Label-free chemiluminescent aptasensor for platelet-derived growth factor detection based on exonuclease-assisted cascade autocatalytic recycling amplification
Asare-Okai et al. A modified fluorescent intercalator displacement assay for RNA ligand discovery
US20240018577A1 (en) Method for detection of analytes via polymer complexes
US10012631B2 (en) Fluorescence sensor for target analysis, kit for target analysis, and target analysis method using same
Chen et al. A new colorimetric platform for ultrasensitive detection of protein and cancer cells based on the assembly of nucleic acids and proteins
US10233442B2 (en) Method for affinity purification
Liu et al. A label-free sensitive method for membrane protein detection based on aptamer and AgNCs transfer
JP5266828B2 (en) Method for measuring the content of methylated DNA
WO2018179514A1 (en) Steroid-skeleton-containing-compound detecting device and steroid-skeleton-containing-compound detecting method using same
He et al. Detection of biotin-streptavidin interactions based on poly (thymine)-templated copper nanoparticles coupled with Exo III-aided DNA recycling amplification
JP2007521011A (en) Analytical methods for labeling and detecting microRNA sequences and small interfering RNA sequences
EP3365350B1 (en) Multiplex dna immuno-sandwich assay (mdisa)
WO2013111953A2 (en) Method for detecting and quantifying target proteins or target cells using aptamer chips
JP6570086B2 (en) Detection device and target detection method using the same
JP5303981B2 (en) DNA methylation measurement method
US11353423B2 (en) Electrophoresis diagnostic methods and kits
WO2016052368A1 (en) Method and kit for measuring target nucleic acid containing modified nucleobase
JP5277681B2 (en) DNA methylation measurement method
Li et al. A sensitive fluorescence method for sequence-specific recognition of single-stranded DNA by using glucose oxidase
JP6218250B2 (en) Target analysis sensor, target analysis device, and target analysis method using the same
EP3271478B1 (en) Analysis of single-stranded rna
JP2011196879A (en) Detection method and kit of target biomolecule
WO2018197725A1 (en) Electrochemical biosensor for the detection of nucleic acids

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17904266

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2019508523

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17904266

Country of ref document: EP

Kind code of ref document: A1