WO2018176560A1 - 一种oled显示器件及其制备方法 - Google Patents

一种oled显示器件及其制备方法 Download PDF

Info

Publication number
WO2018176560A1
WO2018176560A1 PCT/CN2017/082805 CN2017082805W WO2018176560A1 WO 2018176560 A1 WO2018176560 A1 WO 2018176560A1 CN 2017082805 W CN2017082805 W CN 2017082805W WO 2018176560 A1 WO2018176560 A1 WO 2018176560A1
Authority
WO
WIPO (PCT)
Prior art keywords
display device
oled display
organic
electron injecting
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/082805
Other languages
English (en)
French (fr)
Inventor
江志雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to US15/569,401 priority Critical patent/US10418579B2/en
Publication of WO2018176560A1 publication Critical patent/WO2018176560A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/165—Electron transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine

Definitions

  • the present invention relates to an organic electroluminescent display panel, and more particularly to an OLED display device and a method of fabricating the same.
  • OLED Organic electroluminescence technology
  • organic electroluminescent displays can be divided into two categories, one based on small organic molecules (Small) Molecule) display screen of luminescent materials, referred to as SmOLED, which is mainly processed by vacuum evaporation; the other type is based on polymer luminescent materials, referred to as PLED, which is mainly used.
  • SmOLED small organic molecules
  • PLED polymer luminescent materials
  • OLED products entering the market are small molecules prepared by vacuum evaporation technology. OLED, the utilization rate of this technology is low, the evaporation process takes a long time, and the fine metal mask (FMM) for vapor deposition is high in cost. When used for large-area evaporation, the metal is easily bent and the precision is lowered.
  • the conjugated polymer [9,9-dioctylfluorene-9,9-bis(N,N-dimethylaminopropyl)phosphonium] can be used both as a non-polar solvent ( If it is dissolved by benzene, xylene, chlorobenzene, chloroform, etc., it can also be dissolved by water or an alcohol solvent (such as methanol, ethanol, etc.), so PFN is usually used for the electron injection layer or the electron transport layer, but The PFN electron mobility is weak, resulting in poor electron injection of OLED devices.
  • An object of the present invention is to provide an OLED display device and a method for fabricating the same, which solves the technical problem that the OLED display device prepared by the solution method has poor electron injection effect.
  • the present invention provides an OLED display device including a substrate, a first electrode disposed on the substrate, a hole injection layer disposed on the first electrode, and the hole is disposed in the hole An organic light-emitting layer on the injection layer, an electron injection layer provided on the organic light-emitting layer, and a second electrode provided on the electron injection layer; the material of the electron injection layer is made of an inorganic electron injecting material, and An organic electron transporting material dissolved in a polar solvent is prepared as a solution of a solute, water or an alcohol as a solvent; the organic electron transporting material comprises [9,9-dioctylfluorene-9,9-bis(N, N-dimethylaminopropyl) oxime].
  • the present invention further provides an OLED display device comprising: a substrate, a first electrode disposed on the substrate, a hole injection layer disposed on the first electrode, and disposed at the An organic light-emitting layer on the hole injection layer, an electron injection layer provided on the organic light-emitting layer, and a second electrode provided on the electron injection layer, the material of the electron injection layer comprising an inorganic electron injecting material And organic electron transport materials that are soluble in polar solvents.
  • the inorganic electron injecting material includes LiF or CsF
  • the organic electron transporting material includes [9,9-dioctylfluorene-9,9-bis(N,N-dimethylaminopropyl)fluorene] .
  • the mixing ratio of the inorganic electron injecting material and the organic electron transporting material ranges from 0.125 to 0.5.
  • the mixing ratio of the inorganic electron injecting material and the organic electron transporting material is 0.25.
  • the electron injecting layer is made of a solution of an inorganic electron injecting material and an organic electron transporting material as a solute, water or an alcohol as a solvent, and the mixing ratio of the solute and the solvent in the solution is in the range of 0.1% to 0.2. %.
  • the invention also provides a preparation method of an OLED display device, comprising the following steps:
  • the material of the electron injecting layer comprising an inorganic electron injecting material, and an organic electron transporting material soluble in a polar solvent;
  • a second electrode is formed on the electron injection layer.
  • the inorganic electron injecting material includes LiF or CsF
  • the organic electron transporting material includes [9,9-dioctylfluorene-9,9-bis(N,N-dimethylaminopropyl)fluorene] .
  • the mixing ratio of the inorganic electron injecting material and the organic electron transporting material ranges from 0.125 to 0.5.
  • the mixing ratio of the inorganic electron injecting material and the organic electron transporting material is 0.25.
  • the electron injecting layer is made of a solution in which an inorganic electron injecting material and an organic electron transporting material are used as a solute, water or an alcohol as a solvent, and a mixing ratio of the solute and the solvent in the solution ranges from 0.125 to 0.5.
  • the OLED display device of the present invention includes a substrate, a first electrode disposed on the substrate, a hole injection layer disposed on the first electrode, and a method for fabricating the same
  • the organic electron transporting material which is soluble in the polar solvent can prepare the electron injecting layer by using the solution prepared by blending the inorganic salt material and the organic material, thereby effectively improving the electron injection efficiency and the electron injecting effect is good.
  • FIG. 1 is a schematic structural view of an OLED display device provided by the present invention.
  • FIG. 2 is a flow chart of a method for fabricating an OLED display device provided by the present invention
  • FIG. 3 is a schematic structural view of an inkjet printing system provided by the present invention.
  • an OLED display device includes a substrate 11 , a first electrode 12 disposed on the substrate 11 , and a hole injection layer 13 disposed on the first electrode 12 .
  • the substrate 11 is a TFT array substrate 11, and the first electrode 12 is a transparent pixel electrode on the TFT array substrate 11.
  • the first electrode 12 is an anode, and the second electrode 16 is a cathode.
  • the first electrode 12 is typically formed of a conductive material having a relatively high work function, such as indium tin oxide (ITO) or silver (Ag).
  • the first electrode 12 may be a two-layer structure, for example, the first electrode 12 may include, for example, aluminum (Al) a high reflectivity metal material such as an aluminum alloy is formed to improve the light emission efficiency of the first layer, and a second layer formed of a transparent conductive material having a relatively high work function such as indium tin oxide (ITO) or silver (Ag) Floor.
  • the hole injection layer 13 is for smoothly injecting holes from the first electrode 12 to the organic light-emitting layer 14, which is available from CuPc (copper phthalocyanine), PEDOT (poly(3, 4)- Ethylene dioxythiophene), PANI (polyaniline) and NPD (N,N-dinaphthyl-N,N'- At least one of diphenylbenzidine is selected as a preparation material.
  • the material of the hole injection layer 13 includes PEDOT:PSS, wherein the PSS is a polystyrene sulfonate, and the two materials are mixed together to greatly improve the solubility of PEDOT.
  • the material of the organic light-emitting layer 14 may include an organic small molecule fluorescent material, an organic polymer fluorescent material, a small molecule phosphorescent material, or a polymer phosphorescent material.
  • the electron injecting layer 15 is used for smoothly injecting electrons
  • the organic electron transporting material may include a conjugated polymer [9,9-dioctylfluorene-9,9-bis(N,N-dimethyl) Aminopropyl) ⁇ ] (PFN)), mainly because PFN can be used both by non-polar solvents (such as benzene, xylene, chlorobenzene, chloroform, etc.) and with polar solvents such as water or alcohols (eg Methanol, ethanol, etc. are dissolved, and can form a certain electron injection capability with high work function metals.
  • non-polar solvents such as benzene, xylene, chlorobenzene, chloroform, etc.
  • polar solvents such as water or alcohols (eg Methanol, ethanol, etc. are dissolved, and can form a certain electron injection capability with high work function metals.
  • the inorganic electron injecting material mainly comprises a metal compound, which may include an alkali metal or an alkaline earth metal, such as LiQ, LiF, NaF, KF, RbF, CsF, FrF, BeF2, MgF2, CaF2, SrF2, BaF2. And RaF2 At least one of them.
  • the inorganic electron injecting material comprises LiF and/or CsF.
  • the electron injecting layer 13 is made of a solution in which an inorganic electron injecting material and an organic electron transporting material are used as a solute, water or an alcohol as a solvent, and the mixing ratio of the solute and the solvent in the solution is in the range of 0.1% to 0.2%.
  • the mixing ratio of the inorganic electron injecting material and the organic electron transporting material ranges from 0.125 to 0.5, and an optimum mixing ratio of the inorganic electron injecting material and the organic electron transporting material is 0.25 (that is, 1:4).
  • a good organic matter and an inorganic substance can be formed by blending an inorganic electron injecting material of LiF, CsF type with a PFN type organic electron transporting material soluble in a hydroalcoholic solvent.
  • the mixed solution not only overcomes the disadvantages of LiF, CsF inorganic salts, crystallinity, poor adhesion, and poor adhesion, but also overcomes the shortcomings of weak PFN electron transport ability, thereby producing a flat and uniform film.
  • the electron injection effect is good, which is beneficial to improve the efficiency of the device.
  • the range of materials that can be processed by the solution is expanded, and the application range of the wet film formation process (such as inkjet printing method) is improved.
  • the present invention further provides a method for fabricating an OLED display device, the method comprising the following steps:
  • a substrate 11 is provided, and the first electrode 12 is formed on the substrate 11.
  • the substrate 11 is usually glass
  • the first electrode 12 can be prepared on the substrate 11 by sputtering or evaporation
  • the first electrode 12 is an anode
  • the material of the anode can include ITO.
  • the hole injection layer 13 and the organic light-emitting layer 14 are formed on the ITO substrate 11 by a wet film formation process or an evaporation process.
  • the material of the hole injection layer 15 includes PEDOT:PSS, wherein PSS Is polystyrene sulfonate, PEDOT is (poly(3,4)- Ethylene dioxythiophene).
  • the material of the organic light-emitting layer 14 includes an organic small molecule fluorescent material, an organic polymer fluorescent material, a small molecule phosphorescent material, or a polymer phosphorescent material.
  • an organic injection layer 15 on the organic light-emitting layer 14 by a wet film formation process, and the material of the electron injection layer 15 includes an inorganic electron injection material and an organic electron transport material soluble in a polar solvent.
  • the electron injecting layer 15 is made of a solution in which an inorganic electron injecting material and an organic electron transporting material are used as a solute, and water or an alcohol is mixed as a solvent.
  • the mixing ratio of the solute and the solvent in the solution is in the range of 0.1% to 0.2%.
  • the mixing ratio of the inorganic electron injecting material and the organic electron transporting material ranges from 0.125 to 0.5, and an optimum mixing ratio of the inorganic electron injecting material and the organic electron transporting material is 0.25 (that is, 1:4).
  • the inorganic electron injecting material includes LiF and/or CsF, and the organic electron transporting material includes PFN. Referring to FIG.
  • an electron injection layer 15 can be prepared by an inkjet printing system including a table 21, a head 22, and a head moving device 23, wherein the substrate 11 is fixed on the table 21, and the electron injection layer 15
  • the mixed solution is contained in the head 22, and when the head moving device 23 controls the head 22 to move at a constant speed, the mixed solution is dropped from the head 22 onto the substrate 11.
  • the second electrode 16 is a cathode
  • the material of the cathode may include a metal such as Al, Mg or Ca, or may be a metal alloy, which may be prepared by a sputtering method or an evaporation method.
  • the OLED display device includes a substrate 11, a first electrode 12 disposed on the substrate 11, a hole injection layer 13 disposed on the first electrode 12, An organic light-emitting layer 14 provided on the hole injection layer 13, an electron injection layer 15 provided on the organic light-emitting layer 14, and a second electrode 16 provided on the electron injection layer 15, the electron injection layer 15
  • the material includes an inorganic electron injecting material and an organic electron transporting material soluble in a polar solvent, and the electron injecting layer 15 is prepared by using a solution in which the inorganic salt material and the organic material are blended, thereby effectively improving electron injection efficiency and improving device efficiency. And expand the range of materials available for the wet film forming process, increasing the range of applications of inkjet printing.

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种OLED显示器件及其制备方法，该OLED显示器件包括基板（11）、设于该基板上的第一电极（12）、设于该第一电极上的空穴注入层（13）、设于该空穴注入层上的有机发光层（14）、设于该有机发光层上的电子注入层（15）、以及设于该电子注入层上的第二电极（16），该电子注入层的材料包括无机电子注入材料、以及可溶于极性溶剂的有机电子传输材料。该OLED显示器件及其制备方法通过利用无机盐类材料和有机材料共混的溶液制备电子注入层，能有效提高电子的注入效率，电子注入效果好。

Description

一种OLED显示器件及其制备方法 技术领域
本发明涉及有机电致发光显示屏，特别是涉及一种OLED显示器件及其制备方法。
 背景技术
有机电致发光技术 (OLED) 作为新一代显示技术，与当前占主流的液晶显示技术相比，具有轻薄、低耗、高响应、高分辨等优点，受到产业界的广泛关注，被认为是最具竞争力的新一代平板显示技术之一，已成为当今平板显示技术研究的热门。
根据发光材料的不同，有机电致发光显示屏可以分为两类，一类为基于有机小分子(Small Molecule)发光材料的显示屏，简称SmOLED，该类显示屏主要采用真空蒸镀的方式加工制备；另一类为基于高分子(Polymer)发光材料的显示屏，简称PLED，该类显示屏主要采用溶液加工方式制备。目前，进入市场的OLED产品都是采用真空蒸镀技术制备的小分子 OLED，这种技术材料利用率低，蒸镀制程耗费时间较长，且蒸镀用的精细金属光罩（FMM）成本高，用于大面积蒸镀时，金属易弯曲导致精度下降，在与制备技术日益成熟的液晶显示LCD竞争中难以取胜，而溶液处理湿法制备薄膜技术由于采用造价较低的设备，制备工艺简单，具有明显的低成本优势而引起业界的广泛关注。
在湿法制备 OLED 技术中，由于共轭聚合物[9，9-二辛基芴-9，9-双(N，N-二甲基胺丙基)芴](PFN)）既能被非极性的溶剂（如苯，二甲苯，氯苯，氯仿等）所溶解，也能被水或醇类溶剂（如甲醇，乙醇等）所溶解，故通常将PFN用于电子注入层或电子传输层，但是，由于PFN电子迁移能力弱，从而导致OLED器件电子注入效果不佳。
 技术问题
本发明的目的在于提供一种OLED显示器件及其制备方法，以解决现有通过溶液法制备的OLED显示器件电子注入效果不佳的技术问题。
 技术解决方案
为解决上述技术问题，本发明提供了一种OLED显示器件，包括基板、设于所述基板上的第一电极、设于所述第一电极上的空穴注入层、设于所述空穴注入层上的有机发光层、设于所述有机发光层上的电子注入层、以及设于所述电子注入层上的第二电极；所述电子注入层的材料由无机电子注入材料、以及可溶于极性溶剂的有机电子传输材料作为溶质，水或醇类作为溶剂混合的溶液制成；所述有机电子传输材料包括[9，9-二辛基芴-9，9-双(N，N-二甲基胺丙基)芴]。
为解决上述技术问题，本发明还提供了一种OLED显示器件，包括：包括基板、设于所述基板上的第一电极、设于所述第一电极上的空穴注入层、设于所述空穴注入层上的有机发光层、设于所述有机发光层上的电子注入层、以及设于所述电子注入层上的第二电极，所述电子注入层的材料包括无机电子注入材料、以及可溶于极性溶剂的有机电子传输材料。
进一步地，所述无机电子注入材料包括LiF或CsF，所述有机电子传输材料包括[9，9-二辛基芴-9，9-双(N，N-二甲基胺丙基)芴]。
进一步地，所述无机电子注入材料和有机电子传输材料的混合比例的范围为0.125~0.5。
进一步地，所述无机电子注入材料和有机电子传输材料的混合比例为0.25。
进一步地，所述电子注入层由无机电子注入材料和有机电子传输材料作为溶质，水或醇类作为溶剂混合的溶液制成，所述溶液中溶质和溶剂的混合比例的范围为0.1%~0.2%。
本发明还提供了一种OLED显示器件的制备方法，包括以下步骤：
提供一基板，在所述基板上形成第一电极；
在所述第一电极上依次涂布、或蒸镀形成空穴注入层和有机发光层；
采用湿法成膜工艺在所述有机发光层上涂布形成电子注入层，所述电子注入层的材料包括无机电子注入材料、以及可溶于极性溶剂的有机电子传输材料；
在所述电子注入层上形成第二电极。
进一步地，所述无机电子注入材料包括LiF或CsF，所述有机电子传输材料包括[9，9-二辛基芴-9，9-双(N，N-二甲基胺丙基)芴]。
进一步地，所述无机电子注入材料和有机电子传输材料的混合比例的范围为0.125~0.5。
进一步地，所述无机电子注入材料和有机电子传输材料的混合比例为0.25。
进一步地，所述电子注入层由无机电子注入材料和有机电子传输材料作为溶质，水或醇类作为溶剂混合的溶液制成，所述溶液中溶质和溶剂的混合比例的范围为0.125~0.5。
 有益效果
本发明的有益效果：本发明所述的OLED显示器件及其制备方法，该OLED显示器件包括基板、设于该基板上的第一电极、设于该第一电极上的空穴注入层、设于该空穴注入层上的有机发光层、设于该有机发光层上的电子注入层、以及设于该电子注入层上的第二电极，该电子注入层的材料包括无机电子注入材料、以及可溶于极性溶剂的有机电子传输材料，通过利用无机盐类材料和有机材料共混的溶液制备电子注入层，能有效提高电子的注入效率，电子注入效果好。
 附图说明
图1为本发明提供的OLED显示器件的结构示意图；
图2为本发明提供的OLED显示器件的制备方法的流程图；
图3为本发明提供的喷墨印刷系统的结构示意图。
 本发明的最佳实施方式
为使本发明所要解决的技术问题、技术方案及有益效果更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
在本发明的描述中，需要理解的是，当元件被指出“位于”另一元件上时，该元件可以直接位于另一元件上，或者也可以在其间存在插入元件。相反地，当元件被指出“直接位于”另一个元件上时，是指不存在插入元件。此外，术语“和/或”包括相关的所列项目中的一个或多个的任何或所有组合。术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。
请参见图1，本发明提供了一种OLED显示器件，包括基板11、设于该基板11上的第一电极12、设于该第一电极12上的空穴注入层13、设于该空穴注入层13上的有机发光层14、设于该有机发光层14上的电子注入层15、以及设于该电子注入层15上的第二电极16，该电子注入层15的材料包括无机电子注入材料、以及可溶于极性溶剂的有机电子传输材料。
具体的，该基板11为TFT阵列(Array)基板11，该第一电极12为TFT阵列基板11上的透明像素电极，该第一电极12为阳极，该第二电极16为阴极。该第一电极12通常由具有相对较高功函数的导电材料，如氧化铟锡（ITO）或银（Ag）形成。该第一电极12可以是双层结构，比如，该第一电极12可包括诸如铝(Al) 或铝合金这样的高反射率金属材料形成以提高光发射效率的第一层，和由诸如氧化铟锡（ITO）或银（Ag）这样具有相对较高功函数的透明导电材料形成的第二层。该空穴注入层13用于将空穴从第一电极12平稳地注入到有机发光层14，其可从CuPc(铜酞菁)、PEDOT(聚(3，4)- 乙撑二氧噻吩)、PANI( 聚苯胺)和NPD(N，N- 二萘基-N，N’- 二苯基联苯胺)中选出至少一种作为制备材料。优选的，该空穴注入层13的材料包括PEDOT:PSS，其中，PSS是聚苯乙烯磺酸盐，这两种物质混合在一起极大地提高了PEDOT的溶解性。该有机发光层14的材料可以包括有机小分子荧光材料、有机聚合物荧光材料、小分子磷光材料、或者聚合物磷光材料。
本实施例中，该电子注入层15用于平稳地注入电子，该有机电子传输材料可以包括共轭聚合物[9，9-二辛基芴-9，9-双(N，N-二甲基胺丙基)芴](PFN)），这主要是因为PFN既能被非极性的溶剂（如苯，二甲苯，氯苯，氯仿等）、以及水或醇类等极性溶剂（如甲醇，乙醇等）所溶解，还能与高功函数金属形成一定的电子注入能力。该无机电子注入材料主要包括金属化合物，该金属化合物可以包括碱金属或碱土金属，比如可以是LiQ，LiF，NaF，KF，RbF，CsF，FrF，BeF2，MgF2，CaF2，SrF2，BaF2 和RaF2 中的至少一种。优选的，该无机电子注入材料包括LiF和/或CsF。该电子注入层13由无机电子注入材料和有机电子传输材料作为溶质，水或醇类作为溶剂混合的溶液制成，该溶液中溶质和溶剂的混合比例的范围为0.1%~0.2%。该无机电子注入材料和有机电子传输材料的混合比例的范围为0.125~0.5，其中，该无机电子注入材料和有机电子传输材料的最佳混合比例为0.25（也即1:4）。
需要解释的是，在湿法成膜工艺中，通过将LiF,CsF类的无机电子注入材料与可溶于水醇溶剂的PFN类有机电子传输材料共混，可形成良好的有机物与无机物共混的溶液，从而不仅克服了LiF,CsF类无机盐结晶性较强、结晶后的薄膜不均匀、附着性差等缺点，还克服了PFN电子迁移能力弱的缺点，从而能制备出平整均匀的薄膜，电子注入效果好，有利于提升器件的效率，另一方面，扩展了可溶液加工的材料范围，提高湿法成膜制备工艺（比如喷墨打印法）的应用范围。
另外，请参阅图2，本发明还提供一种OLED显示器件的制备方法，该方法包括以下步骤：
S101、提供一基板11，在该基板11上形成第一电极12。
本实施例中，该基板11通常是玻璃，可以通过溅射或蒸镀法在基板11上制备第一电极12，该第一电极12为阳极，该阳极的材料可以包括ITO。
S102、在该第一电极12上依次涂布、或蒸镀形成空穴注入层13和有机发光层14。
本实施例中，可以对ITO基板11进行清洗烘干等操作后，再通过湿法成膜工艺或者蒸镀工艺在ITO基板11上形成空穴注入层13和有机发光层14。当该制备工艺为湿法成膜工艺时，该空穴注入层15的材料包括PEDOT:PSS，其中，PSS 是聚苯乙烯磺酸盐，PEDOT是(聚(3，4)- 乙撑二氧噻吩)。该有机发光层14的材料包括有机小分子荧光材料、有机聚合物荧光材料、小分子磷光材料、或者聚合物磷光材料。
S103、采用湿法成膜工艺在该有机发光层14上涂布形成电子注入层15，该电子注入层15的材料包括无机电子注入材料、以及可溶于极性溶剂的有机电子传输材料。
本实施例中，该电子注入层15由无机电子注入材料和有机电子传输材料作为溶质，水或醇类作为溶剂混合的溶液制成。该溶液中溶质和溶剂的混合比例的范围为0.1%~0.2%。该无机电子注入材料和有机电子传输材料的混合比例的范围为0.125~0.5，其中，该无机电子注入材料和有机电子传输材料的最佳混合比例为0.25（也即1:4）。该无机电子注入材料包括LiF和/或CsF，该有机电子传输材料包括PFN。请参阅图3，可以通过喷墨印刷系统制备电子注入层15，该喷墨印刷系统包括工作台21、喷头22以及喷头移动装置23，其中，基板11固定在工作台21上，电子注入层15的混合溶液装在喷头22中，当喷头移动装置23控制喷头22匀速移动时，混合溶液会从喷头22滴落至基板11上。
S104、在该电子注入层15上形成第二电极16。
本实施例中，该第二电极16为阴极，该阴极的材料可以包括Al、Mg或Ca等金属，还可以是金属合金，其可以通过溅射法或蒸镀法制备。
本发明实施例所述的OLED显示器件及其制备方法，该OLED显示器件包括基板11、设于该基板11上的第一电极12、设于该第一电极12上的空穴注入层13、设于该空穴注入层13上的有机发光层14、设于该有机发光层14上的电子注入层15、以及设于该电子注入层15上的第二电极16，该电子注入层15的材料包括无机电子注入材料、以及可溶于极性溶剂的有机电子传输材料，通过利用无机盐类材料和有机材料共混的溶液制备电子注入层15，能有效提高电子的注入效率，提升器件效率，并且扩展了湿法成膜工艺可选的材料范围，提高了喷墨打印法的应用范围。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (16)

  1. 一种OLED显示器件，其特征在于，包括基板、设于所述基板上的第一电极、设于所述第一电极上的空穴注入层、设于所述空穴注入层上的有机发光层、设于所述有机发光层上的电子注入层、以及设于所述电子注入层上的第二电极；所述电子注入层的材料由无机电子注入材料、以及可溶于极性溶剂的有机电子传输材料作为溶质，水或醇类作为溶剂混合的溶液制成；所述有机电子传输材料包括[9，9-二辛基芴-9，9-双(N，N-二甲基胺丙基)芴]。
  2. 如权利要求1所述的OLED显示器件，其特征在于，所述无机电子注入材料包括LiF和/或CsF。
  3. 如权利要求1所述的OLED显示器件，其特征在于，所述无机电子注入材料和有机电子传输材料的混合比例的范围为0.125~0.5。
  4. 如权利要求3所述的OLED显示器件，其特征在于，所述无机电子注入材料和有机电子传输材料的混合比例为0.25。
  5. 如权利要求1所述的OLED显示器件，其特征在于，所述溶液中溶质和溶剂的混合比例的范围为0.1%~0.2%。
  6. 一种OLED显示器件，其特征在于，包括基板、设于所述基板上的第一电极、设于所述第一电极上的空穴注入层、设于所述空穴注入层上的有机发光层、设于所述有机发光层上的电子注入层、以及设于所述电子注入层上的第二电极，所述电子注入层的材料包括无机电子注入材料、以及可溶于极性溶剂的有机电子传输材料。
  7. 如权利要求6所述的OLED显示器件，其特征在于，所述无机电子注入材料包括LiF和/或CsF，所述有机电子传输材料包括[9，9-二辛基芴-9，9-双(N，N-二甲基胺丙基)芴]。
  8. 如权利要求6所述的OLED显示器件，其特征在于，所述无机电子注入材料和有机电子传输材料的混合比例的范围为0.125~0.5。
  9. 如权利要求8所述的OLED显示器件，其特征在于，所述无机电子注入材料和有机电子传输材料的混合比例为0.25。
  10. 如权利要求6所述的OLED显示器件，其特征在于，所述电子注入层由无机电子注入材料和有机电子传输材料作为溶质，水或醇类作为溶剂混合的溶液制成，所述溶液中溶质和溶剂的混合比例的范围为0.1%~0.2%。
  11. 一种OLED显示器件的制备方法，其特征在于，包括以下步骤：
    提供一基板，在所述基板上形成第一电极；
    在所述第一电极上依次涂布、或蒸镀形成空穴注入层和有机发光层；
    采用湿法成膜工艺在所述有机发光层上涂布形成电子注入层，所述电子注入层的材料包括无机电子注入材料、以及可溶于极性溶剂的有机电子传输材料；
    在所述电子注入层上形成第二电极。
  12. 如权利要求11所述的OLED显示器件的制备方法，其特征在于，所述无机电子注入材料包括LiF和/或CsF，所述有机电子传输材料包括[9，9-二辛基芴-9，9-双(N，N-二甲基胺丙基)芴]。
  13. 如权利要求11所述的OLED显示器件的制备方法，其特征在于，所述无机电子注入材料和有机电子传输材料的混合比例的范围为0.125~0.5。
  14. 如权利要求13所述的OLED显示器件的制备方法，其特征在于，所述无机电子注入材料和有机电子传输材料的混合比例为0.25。
  15. 如权利要求11所述的OLED显示器件的制备方法，其特征在于，所述电子注入层由无机电子注入材料和有机电子传输材料作为溶质，水或醇类作为溶剂混合的溶液制成，所述溶液中溶质和溶剂的混合比例的范围为0.1%~0.2%。
  16. 如权利要求11所述的OLED显示器件的制备方法，其特征在于，所述第一电极和第二电极通过溅射法或蒸镀法制成。
PCT/CN2017/082805 2017-03-27 2017-05-03 一种oled显示器件及其制备方法 Ceased WO2018176560A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/569,401 US10418579B2 (en) 2017-03-27 2017-05-03 OLED display device and method for manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710188151.8A CN107068883A (zh) 2017-03-27 2017-03-27 一种oled显示器件及其制备方法
CN201710188151.8 2017-03-27

Publications (1)

Publication Number Publication Date
WO2018176560A1 true WO2018176560A1 (zh) 2018-10-04

Family

ID=59620281

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/082805 Ceased WO2018176560A1 (zh) 2017-03-27 2017-05-03 一种oled显示器件及其制备方法

Country Status (3)

Country Link
US (1) US10418579B2 (zh)
CN (1) CN107068883A (zh)
WO (1) WO2018176560A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114914370B (zh) * 2021-02-08 2026-01-02 上海和辉光电股份有限公司 有机发光显示面板及其制造方法和有机发光显示装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101469267A (zh) * 2007-12-25 2009-07-01 财团法人山形县产业技术振兴机构 有机电致发光材料及使用该有机电致发光材料的元件
CN101916831A (zh) * 2010-06-30 2010-12-15 华南理工大学 一种全印刷方法制备有机电致发光显示屏的方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070126350A1 (en) * 2005-12-06 2007-06-07 Lee Jeong I White organic light emitting device
WO2011013488A1 (ja) * 2009-07-31 2011-02-03 住友化学株式会社 高分子発光素子
CN103664748B (zh) * 2012-09-03 2016-05-11 乐金显示有限公司 芘化合物以及包含该化合物的有机发光二极管设备
KR20150144710A (ko) * 2014-06-17 2015-12-28 롬엔드하스전자재료코리아유한회사 전자 버퍼 재료 및 유기 전계 발광 소자
JP2017114853A (ja) * 2015-12-18 2017-06-29 株式会社半導体エネルギー研究所 有機金属錯体、発光素子、発光装置、電子機器、および照明装置
KR102388993B1 (ko) * 2016-04-01 2022-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 전자 기기, 및 조명 장치
CN106129263B (zh) * 2016-07-22 2018-01-30 深圳市华星光电技术有限公司 Oled显示器件及其制作方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101469267A (zh) * 2007-12-25 2009-07-01 财团法人山形县产业技术振兴机构 有机电致发光材料及使用该有机电致发光材料的元件
CN101916831A (zh) * 2010-06-30 2010-12-15 华南理工大学 一种全印刷方法制备有机电致发光显示屏的方法

Also Published As

Publication number Publication date
US10418579B2 (en) 2019-09-17
US20190051855A1 (en) 2019-02-14
CN107068883A (zh) 2017-08-18

Similar Documents

Publication Publication Date Title
US20150303393A1 (en) Organic electroluminescent device and process for preparing the same
US20080171228A1 (en) System for displaying images
CN108963087A (zh) 量子点电致发光器件及显示器
CN103000816B (zh) 一种基于柔性碳纳米管薄膜的有机发光器件
WO2013094848A1 (ko) 전 용액 공정이 가능한 유기발광소자
US20180166646A1 (en) Organic light-emitting device and display device
WO2014067233A1 (zh) 高导电性有机透明导电薄膜的制备方法
JP2006190671A (ja) 電界発光素子及びその製造方法
CN102456710A (zh) Oled及其制作方法、透视性单向发光屏体和触摸屏
WO2021227115A1 (zh) 一种显示面板及显示面板制程方法
CN111446378B (zh) 一种透明有机电致发光二极管的制作方法
TWI580686B (zh) 一種有機電致發光元件及其製備方法
JP5945076B2 (ja) 有機エレクトロルミネッセンスデバイス及びその製造方法
CN106981588A (zh) 一种有机发光器件及其制造方法
KR20200085113A (ko) 버퍼 일체형 투명전극을 구비한 페로브스카이트 태양전지 및 이의 제조 방법
JP4527935B2 (ja) 有機エレクトロルミネッセント画像表示装置
CN206116461U (zh) 一种采用低温镀膜tco作为阴极的oled膜层
WO2018176560A1 (zh) 一种oled显示器件及其制备方法
US9780323B2 (en) Tandem organic light emitting diode and preparation method thereof
US20070196643A1 (en) Conductive layer and organic electroluminescent device including the same
CN106920895B (zh) 一种顶发射有机电致发光器件的阴极及其制备方法
US20180374654A1 (en) METHOD FOR MANUFACTURING HEMT/HHMT DEVICE BASED ON CH3NH3PbI3 MATERIAL
CN101304075B (zh) 有机发光二极管及其制造方法
WO2018201568A1 (zh) 顶发射有机发光二极管及制造方法
TWI895603B (zh) 太陽能電池及其製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17903506

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17903506

Country of ref document: EP

Kind code of ref document: A1