WO2018165816A1 - Chip fanning out circuit and method - Google Patents

Chip fanning out circuit and method Download PDF

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Publication number
WO2018165816A1
WO2018165816A1 PCT/CN2017/076432 CN2017076432W WO2018165816A1 WO 2018165816 A1 WO2018165816 A1 WO 2018165816A1 CN 2017076432 W CN2017076432 W CN 2017076432W WO 2018165816 A1 WO2018165816 A1 WO 2018165816A1
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WO
WIPO (PCT)
Prior art keywords
chip
auxiliary
thermal expansion
encapsulation layer
net
Prior art date
Application number
PCT/CN2017/076432
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French (fr)
Chinese (zh)
Inventor
胡川
刘俊军
Original Assignee
深圳修远电子科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 深圳修远电子科技有限公司 filed Critical 深圳修远电子科技有限公司
Priority to PCT/CN2017/076432 priority Critical patent/WO2018165816A1/en
Publication of WO2018165816A1 publication Critical patent/WO2018165816A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof

Definitions

  • the invention belongs to the field of electronics, and in particular relates to a chip fanout circuit and method.
  • the package material is covered by the chip, during which the package material undergoes a heating-cooling-curing process, and the final package circuit is bent or deformed due to thermal imbalance (for example, it may be formed as shown in FIG. 3).
  • the bending), bending or deformation affects the positional relationship and connection relationship of the connection, and the connection error occurs. If the connection line width is very thin, the connection may be broken.
  • the present invention overcomes the defects of the prior art, and provides a chip fan-out circuit and method, which avoids the overall bending or deformation of the chip by the package of the package layer, and ensures that the connection relationship of the circuit is not damaged by the packaging process.
  • a chip fanout method includes: disposing a chip on a carrier board, and disposing an auxiliary net and a packaging material on the carrier board; the chip is at least partially embedded in the encapsulation material, and the auxiliary net is at least partially embedded in the Within the encapsulation material, the encapsulation material is cured into an encapsulation layer that secures the chip and the auxiliary mesh package; the carrier plate is detached from the chip or the encapsulation layer or the auxiliary mesh.
  • the auxiliary net is provided with a window, the chip at least partially extending into the window.
  • the chip and the auxiliary mesh both abut the carrier.
  • the one side of the encapsulation layer facing the carrier is a first surface, and the side opposite to the first surface is a second surface; the chip is disposed adjacent to the first surface and An auxiliary net; or, the chip is disposed adjacent to the first surface, and the auxiliary net is disposed adjacent to the second surface.
  • the chip is adjacent to the first surface
  • the auxiliary net is adjacent to the first surface
  • the auxiliary network has a thermal expansion coefficient greater than a thermal expansion coefficient of the encapsulation layer.
  • the chip is adjacent to the first surface, and the auxiliary net is adjacent to the second surface, and the auxiliary network has a thermal expansion coefficient smaller than a thermal expansion coefficient of the encapsulation layer.
  • the coefficient of thermal expansion of the encapsulation layer, the coefficient of thermal expansion of the chip, and the coefficient of thermal expansion of the auxiliary net are such that the chip, the auxiliary net, and the The overall thermal stress balance of the encapsulating material.
  • the maximum thickness of the auxiliary net is greater than the maximum thickness of the chip.
  • the auxiliary mesh has a thickness at least less than 100 microns of the thickness of the encapsulation layer.
  • the auxiliary network accounts for 10% to 90% of the total area of the encapsulation layer minus the area occupied by the chip.
  • the auxiliary mesh is metal, ceramic, or plastic.
  • the encapsulating material is a compression molded material.
  • the Young's modulus of the auxiliary mesh is greater than the Young's modulus of the encapsulation layer.
  • a chip fan-out circuit includes: a chip, an encapsulation layer formed by encapsulating a material, and an auxiliary net; wherein the chip is at least partially embedded in the encapsulation layer, and the auxiliary net is at least partially embedded in the In the encapsulation layer, the encapsulation layer fixes the chip and the auxiliary net package, and the auxiliary net is used to reduce bending or deformation caused by curing of the encapsulation material into the encapsulation layer.
  • the auxiliary net is provided with a window, the chip at least partially extending into the window.
  • the encapsulation layer has opposing first and second surfaces; the chip and the auxiliary mesh are adjacent to the first surface; or the chip is adjacent to the first surface, The auxiliary net is adjacent to the second surface.
  • the chip is adjacent to the first surface
  • the auxiliary net is adjacent to the first surface
  • the auxiliary network has a thermal expansion coefficient greater than a thermal expansion coefficient of the encapsulation layer.
  • the chip and the auxiliary net are both flush with the first surface, and And the plane formed by the chip, the auxiliary net, and the first surface is flat.
  • the chip is adjacent to the first surface, and the auxiliary net is adjacent to the second surface, and the auxiliary network has a thermal expansion coefficient smaller than a thermal expansion coefficient of the encapsulation layer.
  • the coefficient of thermal expansion of the encapsulation layer, the coefficient of thermal expansion of the chip, and the coefficient of thermal expansion of the auxiliary net are such that the chip, the auxiliary net, and the The overall thermal stress balance of the encapsulating material.
  • the auxiliary mesh is metal, ceramic, or plastic.
  • the encapsulating material is a compression molded material.
  • the Young's modulus of the auxiliary mesh is greater than the Young's modulus of the encapsulation layer.
  • a chip fan-out method includes: disposing a chip on a carrier board, and disposing an auxiliary fiber and a packaging material on the carrier board; the chip is at least partially embedded in the packaging material, and the auxiliary fiber is at least partially embedded in the package Within the encapsulation material, the encapsulation material is cured into an encapsulation layer that secures the chip and the auxiliary fiber package; the carrier plate is detached from the chip or the encapsulation layer or the auxiliary fiber.
  • the auxiliary fibers constitute an auxiliary net, the auxiliary net being provided with a window, the chip at least partially extending into the window.
  • the chip and the auxiliary mesh both abut the carrier.
  • the one side of the encapsulation layer facing the carrier is a first surface, and the side opposite to the first surface is a second surface; the chip is disposed adjacent to the first surface and An auxiliary fiber; or, the chip is disposed adjacent to the first surface, and the auxiliary fiber is disposed adjacent to the second surface.
  • the chip is adjacent to the first surface
  • the auxiliary fiber is adjacent to the first surface
  • the auxiliary fiber has a coefficient of thermal expansion greater than a coefficient of thermal expansion of the encapsulation layer.
  • the chip is adjacent to the first surface
  • the auxiliary fiber is adjacent to the second surface
  • the auxiliary fiber has a coefficient of thermal expansion that is less than a coefficient of thermal expansion of the encapsulation layer.
  • the coefficient of thermal expansion of the encapsulation layer, the coefficient of thermal expansion of the chip, and the coefficient of thermal expansion of the auxiliary fiber are such that the chip, the auxiliary net, and the The overall thermal stress balance of the encapsulating material.
  • the auxiliary fibers are metal, ceramic, or plastic.
  • the encapsulating material is a compression molded material.
  • the Young's modulus of the auxiliary fibers is greater than the Young's modulus of the encapsulating layer.
  • a chip fan-out circuit includes: a chip, an encapsulation layer cured from an encapsulation material, and an auxiliary fiber; wherein the chip is at least partially embedded in the encapsulation layer, and the auxiliary fiber is at least partially embedded in the In the encapsulation layer, the encapsulation layer fixes the chip and the auxiliary fiber package, and the auxiliary fiber is used to reduce bending or deformation caused by curing of the encapsulation material into the encapsulation layer.
  • the auxiliary fibers constitute an auxiliary net, the auxiliary net being provided with a window, the chip at least partially extending into the window.
  • the encapsulation layer has opposing first and second surfaces; the chip and the auxiliary fiber are adjacent to the first surface; or the chip is adjacent to the first surface, The auxiliary fibers are adjacent to the second surface.
  • the chip is adjacent to the first surface
  • the auxiliary net is adjacent to the first surface
  • the auxiliary network has a thermal expansion coefficient greater than a thermal expansion coefficient of the encapsulation layer.
  • the chip and the auxiliary net are both flush with the first surface, and the plane formed by the chip, the auxiliary net, and the first surface is flat.
  • the chip is adjacent to the first surface, and the auxiliary net is adjacent to the second surface, and the auxiliary network has a thermal expansion coefficient smaller than a thermal expansion coefficient of the encapsulation layer.
  • the coefficient of thermal expansion of the encapsulation layer, the coefficient of thermal expansion of the chip, and the coefficient of thermal expansion of the auxiliary fiber are such that the chip, the auxiliary fiber, and the The overall thermal stress of the encapsulating material tends to be balanced.
  • the auxiliary fibers are metal, ceramic, or plastic.
  • the encapsulating material is a compression molded material.
  • the Young's modulus of the auxiliary fibers is greater than the Young's modulus of the encapsulating layer.
  • a method for fan-out of a chip comprising: disposing a chip on a carrier board, and setting an auxiliary net and a packaging material on the carrier board; the chip is at least partially embedded in the encapsulation material, and the auxiliary net is at least partially embedded in the encapsulation material, The encapsulating material is cured into an encapsulation layer that secures the chip and the auxiliary mesh package; the carrier is detached from the chip or encapsulation layer or the auxiliary mesh.
  • the chip is arranged under the support of the carrier board, and the placement position of the chip is precise.
  • One chip or more than two chips can be set. When two or more chips are set, the relative positions between the two chips can also be accurately set.
  • the chip is at least partially embedded in the package material (including the chip is completely embedded in the package material, the chip portion is embedded in the package material, and the other portion is exposed to the package material, the chip is completely embedded in the package material and one surface of the chip is from the package layer The surface is bare.
  • the encapsulation material is cured, the position of the chip relative to the encapsulation layer is fixed. If more than two chips are provided, the relative position between the two chips is fixed by the encapsulation layer.
  • the auxiliary net is at least partially embedded in the encapsulating material (including the auxiliary net is completely embedded in the encapsulating material, the auxiliary net portion is embedded in the encapsulating material, and the other portion is exposed to the encapsulating material, and the auxiliary net is exactly embedded in the encapsulating material and one of the chips
  • the surface is exposed from the surface of the encapsulation layer.
  • the encapsulation material has a tendency to deform during curing, the interaction force between the auxiliary net and the encapsulation layer occurs, and the auxiliary net relieves the stress caused by the thermal imbalance of the encapsulation layer.
  • the layer can pull or push the encapsulating material to avoid deformation of the thermal imbalance of the encapsulating material. In this way, the encapsulation layer realizes the chip encapsulation, and the auxiliary net avoids the overall bending of the encapsulation material and the chip composition during the process of curing the encapsulation material into the encapsulation layer.
  • the encapsulating material when the encapsulating material is granular or liquid or flowable before curing, the encapsulating material can enter the auxiliary net, and the interaction between the auxiliary net and the encapsulating material is increased when the encapsulating material has a tendency to deform during curing of the encapsulating material.
  • the force enables the auxiliary net to better alleviate and balance the curing stress of the encapsulating material and avoid bending or deformation of the encapsulating layer.
  • the auxiliary net is provided with a window, and the chip at least partially protrudes into the window, and may be one chip correspondingly protruded into one window, or two or more chips may be deeply penetrated into one window, and the auxiliary net surrounds or partially surrounds the chip.
  • the coefficient of thermal expansion of the chip is different from the coefficient of thermal expansion of the package material, usually the coefficient of thermal expansion of the chip is smaller than the coefficient of thermal expansion of the package material, so that the thermal imbalance of the chip portion is more obvious, and the chip is inserted into the window of the auxiliary network, and the auxiliary The mesh surrounds or partially surrounds the chip Around, it can better alleviate the stress caused by thermal imbalance, and better keep the chip in a predetermined position, so as to ensure that the connection relationship between the chips is not deformed or bent.
  • the chip is inserted into the window of the auxiliary net to reduce the overall thickness.
  • the chip and the auxiliary network both abut the carrier board.
  • the chip has externally connected contacts, and the chip has a contact side facing the carrier.
  • the chip and the auxiliary network are just embedded in the package layer, and the contacts of the chip are not covered by the package layer but are exposed.
  • the contacts of the chip can be electrically connected to the connection; at this time, the chip protrudes into the window of the auxiliary net, and the auxiliary net is as close as possible to the side of the chip with the contacts, so as to keep the position of the chip as much as possible and There is no deformation in the vicinity, and the position of the contacts of the chip is kept unchanged.
  • precise alignment can be realized, and the precise electrical connection of the chip contacts and the wires can be ensured.
  • the traditional method can not overcome the problem of package deformation. It is usually necessary to widen the line width of the connection, increase the gap between the lines to compensate for the misalignment caused by the deformation, and cannot obtain a high-density connection, which limits the transmission speed of the chip. .
  • the method of the present invention can overcome the deformation of the package, and can make the line width of the connection less than 10 micrometers, increase the density of the connection, and set more connections in the same space to obtain more data transmission channels.
  • the one side of the encapsulation layer facing the carrier board is a first surface, and the side opposite to the first surface is a second surface, and the chip and the auxiliary net are disposed adjacent to the first surface; on the one hand, since the first surface is close to the carrier board, it is more advantageous Limiting the deformation of the encapsulation layer near the chip; on the other hand, since the thermal expansion coefficient of the chip is different from the thermal expansion coefficient of the encapsulation material, usually the thermal expansion coefficient of the chip is smaller than the thermal expansion coefficient of the encapsulation material, so that the thermal imbalance of the chip portion is more obvious.
  • the chip and the auxiliary net are simultaneously disposed at a position close to the first surface, and the auxiliary net limits the deformation of the first surface, thereby ensuring the position of the chip.
  • a chip is disposed adjacent to the first surface, and an auxiliary net is disposed adjacent to the second surface. Since the coefficient of thermal expansion of the chip is different from the coefficient of thermal expansion of the package material, usually the coefficient of thermal expansion of the chip is smaller than the coefficient of thermal expansion of the package material, so the first surface near the chip is more thermally uneven, but the package layer is usually sheet-like, The deformation of the first surface is limited by providing an auxiliary mesh near the second surface to limit deformation of the second surface.
  • the chip is close to the first surface, the auxiliary net is close to the first surface, and the thermal expansion coefficient of the auxiliary net is greater than The coefficient of thermal expansion of the encapsulation layer.
  • the auxiliary net and the chip are disposed close to the first surface at the same time, the thermal expansion coefficient of the chip is smaller than the thermal expansion coefficient of the packaging material, the thermal expansion coefficient of the auxiliary net is larger than the thermal expansion coefficient of the encapsulation layer, the thermal stress of the chip and the thermal stress of the auxiliary fiber when the temperature changes.
  • the mutual offset, the shape variable of the auxiliary net and the deformation of the encapsulation layer are offset to avoid deformation of the encapsulation layer.
  • the first surface is the side of the encapsulation layer facing the carrier, and the auxiliary net and the chip are disposed adjacent to the first surface at the same time.
  • the position can avoid deformation of the first surface.
  • the thermal expansion coefficient of the auxiliary net is larger than the thermal expansion coefficient of the encapsulating layer.
  • the shrinkage of the auxiliary net is greater than the shrinkage of the encapsulating material, and the auxiliary net pulls the encapsulating layer from the first surface so that the encapsulating layer does not bend.
  • the chip is close to the first surface, the thermal expansion coefficient of the chip is smaller than the thermal expansion coefficient of the packaging material; the auxiliary mesh is close to the second surface, the thermal expansion coefficient of the auxiliary mesh is smaller than the thermal expansion coefficient of the encapsulation layer, and the stress of the chip and the stress of the auxiliary mesh are on the encapsulation layer. It is symmetrical or approximately symmetrical to avoid deformation of the encapsulation layer.
  • the thermal expansion coefficient of the auxiliary net is smaller than the thermal expansion coefficient of the encapsulating layer.
  • the shrinkage of the auxiliary net is smaller than the shrinkage of the encapsulating layer, and the auxiliary net resists shrinkage of the encapsulating layer on the second surface, so that the encapsulating layer is not bending.
  • the maximum thickness of the auxiliary net is greater than the maximum thickness of the chip.
  • the auxiliary net can prevent the deformation of the encapsulation layer and provide support for the chip to avoid chip damage.
  • the thickness of the auxiliary net is such that it is in the cross section as shown in FIG. 5, and the thickness of the auxiliary net is in the up and down direction as shown in FIG. 5.
  • the thickness of the chip refers to the horizontal direction as shown in FIG. In the cross section, the thickness of the chip in the up and down direction as shown in FIG.
  • the thickness of the auxiliary net is at least 100 micrometers less than the thickness of the encapsulating layer, which facilitates the flow of the encapsulating material, ensures that the encapsulating material fills the space around the chip, and enables the encapsulating layer to better fix the chip.
  • the surface of the encapsulating material after curing the encapsulating layer can be flattened.
  • the auxiliary network accounts for 10% to 90% of the total area of the encapsulation layer minus the area occupied by the chip. Conducive to the flow of the packaging material, to ensure that the packaging material fills the space around the chip, so that the encapsulation layer can better fix the chip.
  • the thermal expansion coefficient of the encapsulation layer, the thermal expansion coefficient of the chip, and the thermal expansion coefficient of the auxiliary net make the overall thermal stress of the chip, the auxiliary net and the encapsulating material balanced during the process of curing the encapsulating material. Selecting the thermal expansion coefficient and the set position of the chip, the auxiliary net and the encapsulating material can offset the integral shape variables of the encapsulation layer, the chip and the auxiliary fiber, and balance the thermal stress to avoid deformation.
  • the auxiliary net is metal, ceramic, or plastic.
  • the encapsulating material is a molding material, and the molding compound can form an encapsulation layer by curing, and the encapsulation layer fixes the chip package.
  • Molded molding materials include, but are not limited to, molded resins.
  • the Young's modulus of the auxiliary net is larger than the Young's modulus of the encapsulation layer.
  • the auxiliary net itself has strong bending resistance and can resist the deformation of the encapsulation layer.
  • the auxiliary material can be made by selecting a metal material.
  • a chip fanout method comprising: disposing a chip on a carrier board and disposing an auxiliary fiber and a packaging material on the carrier board; the chip is at least partially embedded in the encapsulation material, and the auxiliary fiber is at least partially embedded in the encapsulation material, The encapsulating material is cured into an encapsulation layer that secures the chip and the auxiliary fiber package; the carrier is detached from the chip or encapsulation layer or auxiliary fibers.
  • the chip is arranged under the support of the carrier board, and the placement position of the chip is precise.
  • One chip or more than two chips can be set. When two or more chips are set, the relative positions between the two chips can also be accurately set.
  • the chip is at least partially embedded in the package material (including the chip is completely embedded in the package material, the chip portion is embedded in the package material, and the other portion is exposed to the package material, the chip is completely embedded in the package material and one surface of the chip is from the package layer The surface is bare.
  • the encapsulation material is cured, the position of the chip relative to the encapsulation layer is fixed. If more than two chips are provided, the relative position between the two chips is fixed by the encapsulation layer.
  • the auxiliary fiber is at least partially embedded in the encapsulating material (including the auxiliary fiber is completely embedded in the encapsulating material, the auxiliary fiber portion is embedded in the encapsulating material, and the other portion is exposed to the encapsulating material, and the auxiliary fiber is completely embedded in the encapsulating material and one of the chips
  • the surface is exposed from the surface of the encapsulation layer.
  • the encapsulation material is cured, a force interaction force is generated between the auxiliary fiber and the encapsulation layer, the auxiliary fiber relieves the stress caused by the thermal imbalance of the encapsulation layer, and the auxiliary layer can pull or push the package. Material to avoid deformation of the thermal imbalance of the packaging material. In this way, the encapsulation layer realizes chip encapsulation, and the auxiliary fiber avoids the overall bending of the encapsulation material and the chip composition during the process of curing the encapsulation material into the encapsulation layer.
  • the auxiliary fibers may be distributed at any position of the encapsulating layer. Preferably, two or more auxiliary materials may be provided.
  • the auxiliary fiber is interlaced or intertwined in the encapsulating layer.
  • the auxiliary fiber and the encapsulating layer interact with each other to stress balance the encapsulating material, and the auxiliary fiber assists the supporting encapsulating layer.
  • the shape avoids the deformation caused by the curing stress of the encapsulating material.
  • auxiliary fibers constitute an auxiliary net, and the auxiliary net functions are similar to those described in the above 2.
  • the one side of the encapsulating layer facing the carrier board is a first surface, and the side opposite to the first surface is a second surface, and the chip and the auxiliary fiber are disposed adjacent to the first surface; on the one hand, the first surface is closer to the carrier board, which is more advantageous Limiting the deformation of the encapsulation layer near the chip; on the other hand, since the thermal expansion coefficient of the chip is different from the thermal expansion coefficient of the encapsulation material, usually the thermal expansion coefficient of the chip is smaller than the thermal expansion coefficient of the encapsulation material, so that the thermal imbalance of the chip portion is more obvious.
  • the chip and the auxiliary fiber are simultaneously disposed at a position close to the first surface, and the auxiliary fiber limits the deformation of the first surface, thereby ensuring the position of the chip.
  • a chip is disposed adjacent to the first surface, and an auxiliary fiber is disposed adjacent to the second surface. Since the coefficient of thermal expansion of the chip is different from the coefficient of thermal expansion of the package material, usually the coefficient of thermal expansion of the chip is smaller than the coefficient of thermal expansion of the package material, so the first surface near the chip is more thermally uneven, but the package layer is usually sheet-like, The deformation of the first surface is limited by providing an auxiliary fiber near the second surface to limit deformation of the second surface.
  • the chip is adjacent to the first surface, the auxiliary fiber is adjacent to the first surface, and the thermal expansion coefficient of the auxiliary fiber is greater than the thermal expansion coefficient of the encapsulation layer.
  • the auxiliary fiber and the chip are disposed close to the first surface at the same time, the thermal expansion coefficient of the chip is smaller than the thermal expansion coefficient of the packaging material, the thermal expansion coefficient of the auxiliary fiber is larger than the thermal expansion coefficient of the encapsulation layer, the thermal stress of the chip and the thermal stress of the auxiliary fiber when the temperature changes.
  • the mutual offset, the deformation of the auxiliary fiber and the deformation of the encapsulation layer cancel out, thereby avoiding deformation of the encapsulation layer.
  • the first surface is the side of the encapsulation layer facing the carrier plate, and the carrier plate provides flat support, auxiliary fiber and chip. Simultaneously located near the first surface, the deformation of the first surface can be further avoided.
  • the chip is close to the first surface, the thermal expansion coefficient of the chip is smaller than the thermal expansion coefficient of the packaging material; the auxiliary mesh is close to the second surface, the thermal expansion coefficient of the auxiliary fiber is smaller than the thermal expansion coefficient of the encapsulation layer, and the stress of the chip and the stress of the auxiliary fiber are on the encapsulation layer. They are symmetric or approximately symmetrical, cancel each other out, and the deformation of the auxiliary fiber and the deformation of the encapsulation layer cancel out to avoid deformation of the encapsulation layer.
  • the thermal expansion coefficient of the encapsulating layer, the thermal expansion coefficient of the chip, and the thermal expansion coefficient of the auxiliary fiber make the overall thermal stress of the chip, the auxiliary fiber and the encapsulating material balanced during the process of curing the encapsulating material. Selecting the thermal expansion coefficient of the chip, the auxiliary fiber and the encapsulating material and the set position can offset the integral shape variables of the encapsulation layer, the chip and the auxiliary fiber, and balance the thermal stress to avoid deformation.
  • the auxiliary fiber is metal, ceramic, or plastic.
  • the packaging material is a compression molding material.
  • the Young's modulus of the auxiliary fiber is greater than the Young's modulus of the encapsulating layer.
  • the auxiliary fiber itself has strong bending resistance and can resist deformation of the encapsulation layer.
  • two or more auxiliary fibers can be disposed, and the auxiliary fibers are vertically or horizontally interlaced or intertwined in the encapsulation layer, and the auxiliary fibers form a pulling relationship with each other.
  • the structure is stable and is more conducive to preventing deformation caused by the curing stress of the encapsulating material.
  • a metal material can be selected to make an auxiliary fiber.
  • Figure 1 is a schematic view 1 of a conventional manufacturing process
  • Figure 2 is a cross-sectional view taken along line A-A of Figure 1;
  • Figure 3 is a schematic view 2 of a conventional manufacturing process
  • FIG. 4 is a top plan view of a chip fanout method according to an embodiment of the present invention.
  • Figure 5 is a cross-sectional view taken along line B-B of Figure 4.
  • FIG. 6 is a first schematic diagram of a chip fanout method according to an embodiment of the present invention.
  • FIG. 7 is a second schematic diagram of a chip fanout method according to an embodiment of the present invention.
  • FIG. 8 is a schematic diagram 1 of a chip fanout circuit according to an embodiment of the present invention.
  • FIG. 9 is a second schematic diagram of a chip fanout circuit according to an embodiment of the present invention.
  • FIG. 10 is a schematic diagram 3 of a chip fanout circuit according to an embodiment of the present invention.
  • FIG. 11 is a schematic diagram 4 of a chip fanout circuit according to an embodiment of the present invention.
  • FIG. 12 is a first schematic diagram of a chip fanout circuit according to a second embodiment of the present invention.
  • Figure 13 is a cross-sectional view taken along line C-C of Figure 12;
  • FIG. 14 is a second schematic diagram of a chip fanout circuit according to an embodiment of the present invention.
  • FIG. 15 is a third schematic diagram of a chip fanout circuit according to an embodiment of the present invention.
  • 16 is a schematic diagram 4 of a chip-out circuit of a second embodiment of the present invention.
  • 17 is a schematic diagram 5 of a chip fanout circuit according to an embodiment of the present invention.
  • Figure 18 is a cross-sectional view taken along line D-D of Figure 17;
  • FIG. 19 is a first schematic diagram of a three-chip fan-out circuit according to an embodiment of the present invention.
  • Figure 20 is a cross-sectional view taken along line E-E of Figure 19;
  • 21 is a schematic diagram 2 of a three-chip fan-out circuit according to an embodiment of the present invention.
  • 22 is a schematic diagram 3 of a three-chip fan-out circuit according to an embodiment of the present invention.
  • FIG. 23 is a schematic diagram 4 of a three-chip fan-out circuit according to an embodiment of the present invention.
  • encapsulating material 101, encapsulating particles, 110, encapsulating layer, 200, chip, 300, auxiliary net, 310, auxiliary fiber, 320, auxiliary particles, 410, carrier plate, 420, medium layer.
  • the package layer 110 is disposed on the chip 200 to encapsulate the chip 200. If the method of the embodiment is not employed, the package layer 110 is set to a regular rectangular parallelepiped during the temperature-cooling curing process, as shown in FIG. However, since the thermal expansion coefficient of the chip 200 is generally inconsistent with the thermal expansion coefficient of the encapsulation layer 110, the shrinkage ratio between the chip 200 and the encapsulation layer 110 is inconsistent, and the thermal stress is not balanced.
  • the stress direction of the encapsulation layer 110 is as shown by F2 in FIG. 3, F2.
  • the cured encapsulation layer 110 is bent as shown in FIG.
  • a medium layer 420 is disposed on the carrier 410, a chip 200 is disposed on the medium layer 420, and an auxiliary net 300 is disposed on the medium layer 420, and the auxiliary net 300 is provided with a window.
  • the chip 200 is at least partially protruded into the window, and the chip 200 and the auxiliary net 300 are abutted on the carrier 410 through the medium layer 420.
  • the chip 200 is disposed under the support of the carrier 410.
  • the chip 200 is placed accurately, and a chip 200 can be disposed. Two or more chips 200 are provided, and two or more are provided in this embodiment. The relative position between the two chips 200 and the chip 200 can also be accurately set. As shown in FIG.
  • the encapsulation material 100 is disposed on the carrier 410.
  • the chip 200 is completely embedded in the encapsulation material 100 and one surface of the chip 200 is exposed from the surface of the encapsulation layer 110 (but is not limited to this embodiment, and may be The chip 200 is at least partially embedded in the encapsulation material 100.
  • the auxiliary net 300 is completely embedded in the encapsulation material 100 and one surface of the chip 200 is exposed from the surface of the encapsulation layer 110 (but not limited to this embodiment, and may also be an auxiliary network). 300 is at least partially embedded in the encapsulating material 100). As shown in FIG.
  • the encapsulation material 100 is cured into an encapsulation layer 110, and the encapsulation layer 110 encapsulates the chip 200 and the auxiliary net 300, and the relative position between the two chips 200 is fixed by the encapsulation layer 110;
  • the board 410 is detached from the chip 200 or the encapsulation layer 110 or the auxiliary net 300.
  • the auxiliary net 300 mitigates the stress caused by the thermal imbalance of the encapsulation layer 110, and the auxiliary layer can pull or push the encapsulation material 100 to avoid deformation of the thermal imbalance of the encapsulation material 100.
  • the encapsulation layer 110 implements the chip 200 package, and the auxiliary net 300 avoids the overall bending of the encapsulation material 100 and the chip 200 during the process of curing the encapsulation material 100 into the encapsulation layer 110.
  • the encapsulating material 100 is granular or liquid or flowable before curing, the encapsulating material 100 can enter the auxiliary net 300.
  • the auxiliary net 300 is added.
  • the interaction force between the encapsulating materials 100 enables the auxiliary net 300 to better alleviate and equalize the curing stress of the encapsulating material 100, and avoid bending or deformation of the encapsulating layer 110.
  • the auxiliary net 300 prevents the entire structure of the encapsulating material 100 and the chip 200 from being bent during the curing of the encapsulating material 100 into the encapsulating layer 110.
  • the one side of the encapsulating layer 110 facing the carrier plate 410 is the first surface.
  • the side opposite to the first surface is a second surface; the chip 200 and the auxiliary net 300 are disposed adjacent to the first surface; the thermal expansion coefficient of the auxiliary net 300 is greater than the thermal expansion coefficient of the encapsulation layer 110.
  • the second surface shrinkage of the encapsulating layer 110 is greater than the shrinkage of the first surface, and the thermal stress causes the encapsulating layer 110 to have a layer as shown in FIG.
  • the direction of the direction shown by F2 is curved, and the coefficient of thermal expansion of the auxiliary net 300 is greater than the coefficient of thermal expansion of the encapsulating material 100, and the shrinkage of the auxiliary net 300 is greater than that of the encapsulating layer 110 when the temperature is solidified.
  • the auxiliary net 300 is equivalent to pulling the first surface of the encapsulation layer 110 in the direction of F1 in FIG.
  • auxiliary net 300 provides support so that the auxiliary net 300 itself is not deformed.
  • the encapsulating layer 110 can be cured without being deformed and solidified. It is consistent with the preset shape.
  • the auxiliary net 300 is made of metal, ceramic, or plastic, and the encapsulating material 100 is a molded material.
  • a connection is made on the first surface of the encapsulation layer 110, and the connection is electrically connected to the chip 200.
  • the chip 200 and the chip 200 may be directly electrically connected to each other through a connection; and then in the encapsulation layer 110.
  • the first surface is provided with an additional encapsulation layer 110, and the additional encapsulation layer 110 and the encapsulation layer 110 fix the chip 200, the wiring clip in the middle, and provide protection.
  • the chip 200 is formed by the method of the embodiment. Since the chip 200 is disposed on the carrier 410, the chip 200 is positioned accurately. After the package is fabricated, the connection is made to electrically connect the connection and the chip 200. At this time, the chip 200 is electrically connected.
  • the package layer 110 has been fixedly positioned, and when the connection is made, the pattern of the connection line is designed according to the measured specific position of the chip 200, and the connection is made, even if the line width and spacing of the connection are designed to be small,
  • the connection is precisely connected to the chip 200.
  • a line having a line width of less than 10 ⁇ m and a pitch of less than 10 ⁇ m can be fabricated (the conventional connection is larger than 50 ⁇ m and difficult to be fine), thereby increasing the density of the connection and increasing the density.
  • the connection channel of the chip 200 increases the data transmission data of the chip 200.
  • the auxiliary network 300 is provided to limit the deformation of the encapsulation layer 110, and the encapsulation layer 110 can be made thin. The whole of the encapsulation layer 110, the chip 200, and the auxiliary net 300 can be flexible and bendable, but can be broken. Made into a wearable device.
  • the chip 200 may be disposed adjacent to the first surface, and the auxiliary net 300 may be disposed adjacent to the second surface. Since the thermal expansion coefficient of the chip 200 is different from the thermal expansion coefficient of the encapsulation material 100, generally the thermal expansion coefficient of the chip 200 is smaller than the thermal expansion coefficient of the encapsulation material 100, so the first surface near the chip 200 is more thermally uneven, but the encapsulation layer 110 is usually It is sheet-like, and the deformation of the first surface can be restricted by providing the auxiliary net 300 near the second surface to restrict the deformation of the second surface.
  • the thermal expansion coefficient of the auxiliary net 300 may be selected to be smaller than the thermal expansion coefficient of the encapsulation layer 110, and the auxiliary net 300 is close to the second surface.
  • the stress of the chip 200 and the stress of the auxiliary net 300 are symmetric or approximately symmetrical on the encapsulation layer 110, avoiding encapsulation.
  • Layer 110 is deformed.
  • Thermal expansion system of auxiliary net 300 The number is smaller than the thermal expansion coefficient of the encapsulation layer 110.
  • the shrinkage amount of the auxiliary net 300 is smaller than the shrinkage amount of the encapsulation layer 110, and the auxiliary net 300 resists shrinkage of the encapsulation layer 110 on the second surface, so that the package is made.
  • Layer 110 is not bent.
  • the auxiliary net 300 may be disposed at a position close to the middle between the first surface and the second surface.
  • the thermal expansion coefficient of the encapsulation layer 110 is alleviated by selecting the thermal expansion coefficient of the auxiliary net 300, and the thermal expansion coefficient of the encapsulation layer 110, the thermal expansion coefficient of the chip 200, the installed position, the thermal expansion coefficient of the auxiliary net 300, and The location of the mounting is such that during assembly of the encapsulating material 100, the overall thermal stresses of the chip 200, the auxiliary mesh 300, and the encapsulating material 100 are equalized.
  • the present invention is not limited to this embodiment, and the Young's modulus of the auxiliary net 300 may be selected to be larger than the Young's modulus of the encapsulation layer 110.
  • the auxiliary net 300 itself has strong bending resistance, and is sufficient to counter the thermal stress of the encapsulation layer 110 to ensure the encapsulation layer. The deformation does not occur at 110.
  • the auxiliary mesh 300 can be made of metal, ceramic, or plastic.
  • the carrier plate 410 can be selected from a glass material or a metal material.
  • the glass and metal have a good flatness as the carrier 410, and the thermal deformation is small, which is advantageous in maintaining a reliable connection between the base circuit layer and the chip 200.
  • the metal material is preferably made of stainless steel to provide a high degree of flatness on the stainless steel surface.
  • the medium layer 420 may be a photosensitive adhesive medium, and the carrier plate 410 is made of a light-transmissive glass material.
  • the light-transmissive glass is used to form the carrier plate 410.
  • the light-transmitting property of the glass material can be adjusted from one side of the carrier plate 410. The light is applied to the photosensitive paste medium to disengage the carrier 410 from the chip 200 and the encapsulation layer 110.
  • the dielectric layer 420 may be a heat sensitive adhesive medium
  • the carrier 410 may be made of a metal material, from the side of the carrier 410.
  • the temperature of the thermal paste medium is adjusted to disengage the carrier 410 from the chip 200 and the encapsulation layer 110.
  • the metal has good thermal conductivity, is advantageous for using a heat-sensitive bonding material, and has high metal strength and is not easily worn.
  • the carrier plate 410 can be made of stainless steel to prevent rust.
  • the present invention is not limited to the embodiment, and the medium layer 420 may be selected to fix or not fix the chip 200, the medium layer 420 is provided with the card position of the chip 200, the chip 200 is stuck on the card position of the medium layer 420, and the chip 200 is limited by the card position. mobile. It is also possible to select that the medium layer 420 itself is a pasting material, and the medium layer 420 pastes the chip 200 On the carrier plate 410, the displacement during the curing of the encapsulating material 100 is limited.
  • the auxiliary fibers 310 are arranged to form an auxiliary net 300.
  • the auxiliary net 300 is provided with a window, and the chip 200 at least partially protrudes into the window.
  • the chip 200 and the auxiliary net 300 are disposed on the carrier 410, the chip 200 and the auxiliary net 300 are both abutted against the carrier 410, and then the encapsulation material 100 is disposed to cure the encapsulation material 100 into the encapsulation layer 110. 200 and auxiliary fiber 310 are fixed. As shown in FIG.
  • the auxiliary net 300 composed of the auxiliary fibers 310 is disposed near the first surface of the encapsulating layer 110, the thermal expansion coefficient of the auxiliary fibers 310 is larger than the thermal expansion coefficient of the encapsulating layer 110, and the shrinkage of the auxiliary fibers 310 is greater when the temperature is solidified.
  • the auxiliary fibers 310 pull the first surface of the encapsulation layer 110 to prevent the encapsulation layer 110 from curling toward the second surface.
  • the auxiliary net 300 composed of the auxiliary fibers 310 is disposed at a position close to the second surface, and the thermal expansion coefficient of the auxiliary fibers 310 is smaller than the thermal expansion coefficient of the encapsulating layer 110. Since the thermal expansion coefficient of the chip 200 is different from the thermal expansion coefficient of the encapsulation material 100, generally the thermal expansion coefficient of the chip 200 is smaller than the thermal expansion coefficient of the encapsulation material 100, so the first surface near the chip 200 is more thermally uneven, but the encapsulation layer 110 is usually It is sheet-like, and the deformation of the first surface can be restricted by providing the auxiliary fiber 310 near the second surface to restrict the deformation of the second surface.
  • the coefficient of thermal expansion of the auxiliary fiber 310 may be selected to be smaller than the coefficient of thermal expansion of the encapsulation layer 110, the auxiliary fiber 310 is adjacent to the second surface, and the stress of the chip 200 and the stress of the auxiliary fiber 310 are symmetric or approximately symmetrical on the encapsulation layer 110, avoiding encapsulation. Layer 110 is deformed.
  • the coefficient of thermal expansion of the auxiliary fiber 310 is smaller than the coefficient of thermal expansion of the encapsulating layer 110.
  • the shrinkage amount of the auxiliary fiber 310 is smaller than the shrinkage amount of the encapsulating layer 110, and the auxiliary fiber 310 resists the second surface of the encapsulating layer 110.
  • the shrinkage causes the encapsulation layer 110 to not bend.
  • the auxiliary net 300 composed of the auxiliary fibers 310 may be disposed at a position close to the middle between the first surface and the second surface.
  • the encapsulation layer 110 is not deformed by selecting the thermal expansion coefficient and position of the auxiliary fiber 310, the thermal expansion coefficient and position of the chip 200, and the thermal expansion coefficient of the encapsulation layer 110.
  • the auxiliary fiber 310 may be disposed at any position of the encapsulation layer 110, for example, FIG. 18 is shown.
  • the auxiliary fibers 310 are criss-crossed and entangled to form a stable frame structure, and the shape of the encapsulation layer 110 is stabilized to avoid deformation of the encapsulation layer 110.
  • the Young's modulus of the auxiliary fibers 310 may be selected to be larger than the Young's modulus of the encapsulation layer 110.
  • the fibers 310 are criss-crossed and entangled to form a stable frame structure, and the auxiliary fiber 310 itself has a strong bending resistance. Even if the thermal stress of the encapsulating layer 110 is unbalanced, the auxiliary fiber 310 can support the encapsulating layer 110 so as not to be deformed.
  • the auxiliary fiber 310 is metal, ceramic, or plastic, and the encapsulating material 100 is a molded material.
  • the auxiliary particles 320 are arranged to form an auxiliary net 300.
  • the auxiliary net 300 is provided with a window, and the chip 200 at least partially protrudes into the window.
  • the chip 200 and the auxiliary net 300 are disposed on the carrier 410, the chip 200 and the auxiliary net 300 are both abutted against the carrier 410, and then the package particles 101 are disposed to cure the package particles 101 into the package layer 110, and the package layer 110 will be the chip. 200 and the auxiliary particles 320 and the chip 200 are fixed. As shown in FIG.
  • the auxiliary net 300 composed of the auxiliary particles 320 is disposed near the first surface of the encapsulating layer 110, the thermal expansion coefficient of the auxiliary particles 320 is greater than the thermal expansion coefficient of the encapsulating layer 110, and the shrinkage of the auxiliary particles 320 is greater when the temperature is solidified. Shrinkage of the encapsulation layer 110 counteracts shrinkage of the encapsulation layer 110, thereby preventing the encapsulation layer 110 from curling toward the second surface.
  • the auxiliary net 300 composed of the auxiliary particles 320 is disposed at a position close to the second surface, and the thermal expansion coefficient of the auxiliary particles 320 is smaller than the thermal expansion coefficient of the encapsulating layer 110.
  • the thermal expansion coefficient of the chip 200 is different from the thermal expansion coefficient of the encapsulation material 100, generally the thermal expansion coefficient of the chip 200 is smaller than the thermal expansion coefficient of the encapsulation material 100, so the first surface near the chip 200 is more thermally uneven, but the encapsulation layer 110 is usually It is sheet-like, and the deformation of the first surface can be restricted by providing the auxiliary particles 320 near the second surface to restrict the deformation of the second surface.
  • the thermal expansion coefficient of the auxiliary particles 320 may be selected to be smaller than the thermal expansion coefficient of the encapsulation layer 110, and the auxiliary particles 320 are close to the second surface.
  • the shrinkage amount of the auxiliary particles 320 is smaller than the shrinkage amount of the encapsulation layer 110.
  • the auxiliary particles 320 resist shrinkage of the encapsulation layer 110 at the second surface such that the encapsulation layer 110 does not bend.
  • the auxiliary particles 320 may be distributed at any position of the encapsulating layer 110 by selecting The thermal expansion coefficient and position of the auxiliary particles 320, the thermal expansion coefficient and position of the chip 200, and the thermal expansion coefficient of the encapsulation layer 110 prevent the encapsulation layer 110 from being deformed.
  • the auxiliary particles 320 are metal, ceramic, or plastic, and the encapsulating material 100 is a molded material.
  • the chip 200 is disposed on the carrier 410, and the encapsulation material 100 is disposed on the carrier 410.
  • the encapsulation material 100 includes the encapsulating particles 101 and the buffer particles.
  • the thermal expansion coefficient of the buffer particles is greater than or less than the thermal expansion coefficient of the encapsulating particles 101; Partially embedded in the encapsulation material 100, the encapsulation particles 101 are cured into an encapsulation layer 110, and the encapsulation layer 110 encapsulates the chip 200 and the auxiliary net 300; the carrier plate 410 is detached from the chip 200 or the encapsulation layer 110.
  • the chip 200 is disposed under the support of the carrier board 410.
  • the chip 200 is placed at a precise position, and one chip 200 or two or more chips 200 may be disposed. When two or more chips 200 are disposed, the relative relationship between the two chips 200 is The position can also be set precisely.
  • the chip 200 is at least partially embedded in the encapsulation material 100 (including the chip 200 is completely embedded in the encapsulation material 100, the chip 200 is partially embedded in the encapsulation material 100, and the other portion is exposed to the encapsulation material 100.
  • the chip 200 is completely embedded in the encapsulation material 100.
  • one surface of the chip 200 is exposed from the surface of the package layer 110. When the package particles 101 are cured, the position of the chip 200 relative to the package layer 110 is fixed.
  • the relative position between 200 is fixed by the encapsulation layer 110.
  • the buffer particles are at least partially embedded in the encapsulation material 100 (including the buffer particles are completely embedded in the encapsulation material 100, the buffer particles are partially embedded in the encapsulation material 100, and the other portion is exposed to the encapsulation material 100, and the buffer particles are all embedded in the encapsulation material 100.
  • one surface of the chip 200 is exposed from the surface of the encapsulation layer 110.
  • the encapsulating particles 101 are cured, a force interaction force occurs between the buffer particles and the encapsulating particles 101, and the buffering particles alleviate the stress caused by the thermal imbalance of the encapsulating layer 110.
  • the coefficient of thermal expansion of the buffer particles is greater than or less than the coefficient of thermal expansion of the encapsulated particles 101, and the coefficient of thermal expansion of the appropriate buffer particles is selected according to the coefficient of thermal expansion of the encapsulated particles 101 and The position is set such that the stress of the buffering particles 101 during the curing process, the deformation amount of the buffer particles, and the deformation amount of the encapsulating particles 101 are canceled each other, and the entire composition of the encapsulating material 100 and the chip 200 is prevented from being bent.
  • At least two buffer particles are provided, the buffer particles forming a secondary mesh 300 with a window, the chip 200 extending at least partially into the window.
  • the role of the auxiliary net 300 is similar to that described in 2.
  • the one side of the encapsulation layer 110 facing the carrier board 410 is a first surface, and the side opposite to the first surface is a second surface.
  • the chip 200 is disposed adjacent to the first surface, and buffer particles are disposed adjacent to the first surface, and the thermal expansion coefficient of the buffer particles is greater than The thermal expansion coefficient of the encapsulation layer 110; generally, the thermal expansion coefficient of the chip 200 is smaller than the thermal expansion coefficient of the encapsulating particles 101, and the thermal stress of the chip 200 and the thermal stress of the auxiliary fibers cancel each other, thereby preventing the encapsulation layer 110 from being deformed.
  • the chip 200 is disposed adjacent to the first surface, and the auxiliary particles 320 are disposed adjacent to the second surface, and the coefficient of thermal expansion of the buffer particles is smaller than the coefficient of thermal expansion of the encapsulation layer 110.
  • the thermal expansion coefficient of the chip 200 is smaller than the thermal expansion coefficient of the package particles 101, and the stress of the chip 200 and the stress of the buffer particles are symmetric or approximately symmetrical on the encapsulation layer 110, and can cancel each other, thereby avoiding deformation of the encapsulation layer 110.
  • the thermal expansion coefficient of the encapsulation layer 110, the thermal expansion coefficient of the chip 200, and the thermal expansion coefficient of the buffer particles make the overall thermal stress of the chip 200, the auxiliary net 300, and the encapsulating material 100 equalized during the curing of the encapsulating material 100.
  • the thermal expansion coefficient of the chip 200, the buffer particles and the encapsulating particles 101 and the set position the integral shape variables of the encapsulation layer 110, the chip 200, and the auxiliary fibers can be offset, and the thermal stresses are balanced with each other to avoid deformation.

Abstract

The present invention relates to a chip fanning out circuit and method. The chip fanning out method comprises: arranging a chip on a support board, and arranging an auxiliary net and a packaging material on the support board; at least a part of the chip being embedded in the packaging material, at least a part of the auxiliary net being embedded in the packaging material, curing the packaging material to form a packaging layer, and the packaging layer packaging and fixing the chip and the auxiliary net; and disengaging the support board from the chip or the packaging layer or the auxiliary net. Overall bending or deformation caused by packaging the chip by the packaging layer is prevented, thus ensuring that line connection relationship of a circuit is not destroyed by the packaging process.

Description

芯片扇出电路及方法Chip fanout circuit and method 技术领域Technical field
本发明属于电子领域,具体涉及一种芯片扇出电路及方法。The invention belongs to the field of electronics, and in particular relates to a chip fanout circuit and method.
被景技术Scene technology
传统的封装工艺,将封装材料后覆盖芯片,期间,封装材料经历加热-降温-固化的过程,由于热不均衡,会使最终的封装电路弯曲或变形(例如,可能给会形成如图3所示的弯曲),弯曲或变形会影响连线的位置关系和连接关系,发生连接错误,如果连线线宽很细,还可能使连线断裂。In the conventional packaging process, the package material is covered by the chip, during which the package material undergoes a heating-cooling-curing process, and the final package circuit is bent or deformed due to thermal imbalance (for example, it may be formed as shown in FIG. 3). The bending), bending or deformation affects the positional relationship and connection relationship of the connection, and the connection error occurs. If the connection line width is very thin, the connection may be broken.
发明内容Summary of the invention
基于此,本发明在于克服现有技术的缺陷,提供一种芯片扇出电路及方法,避免芯片被封装层封装构成的整体弯曲或变形,保证电路的连线关系不被封装工艺破坏。Based on this, the present invention overcomes the defects of the prior art, and provides a chip fan-out circuit and method, which avoids the overall bending or deformation of the chip by the package of the package layer, and ensures that the connection relationship of the circuit is not damaged by the packaging process.
其技术方案如下:Its technical solutions are as follows:
一种芯片扇出方法,包括:在载板上设置芯片,并在载板上设置辅助网和封装材料;所述芯片至少部分嵌于所述封装材料内,所述辅助网至少部分嵌于所述封装材料内,将所述封装材料固化成封装层,所述封装层将芯片和辅助网封装固定;将所述载板与所述芯片或所述封装层或所述辅助网脱离。A chip fanout method includes: disposing a chip on a carrier board, and disposing an auxiliary net and a packaging material on the carrier board; the chip is at least partially embedded in the encapsulation material, and the auxiliary net is at least partially embedded in the Within the encapsulation material, the encapsulation material is cured into an encapsulation layer that secures the chip and the auxiliary mesh package; the carrier plate is detached from the chip or the encapsulation layer or the auxiliary mesh.
在其中一个实施例中,所述辅助网设有窗口,所述芯片至少部分伸入所述窗口。In one of the embodiments, the auxiliary net is provided with a window, the chip at least partially extending into the window.
在其中一个实施例中,所述芯片和所述辅助网均抵靠所述载板。In one of the embodiments, the chip and the auxiliary mesh both abut the carrier.
在其中一个实施例中,所述封装层朝向所述载板的一面为第一表面,与所述第一表面相对的一面为第二表面;靠近所述第一表面设置所述芯片和所述辅助网;或者,靠近所述第一表面设置所述芯片,靠近所述第二表面设置所述辅助网。 In one embodiment, the one side of the encapsulation layer facing the carrier is a first surface, and the side opposite to the first surface is a second surface; the chip is disposed adjacent to the first surface and An auxiliary net; or, the chip is disposed adjacent to the first surface, and the auxiliary net is disposed adjacent to the second surface.
在其中一个实施例中,所述芯片靠近所述第一表面,所述辅助网靠近所述第一表面,所述辅助网的热膨胀系数大于所述封装层的热膨胀系数。In one embodiment, the chip is adjacent to the first surface, the auxiliary net is adjacent to the first surface, and the auxiliary network has a thermal expansion coefficient greater than a thermal expansion coefficient of the encapsulation layer.
在其中一个实施例中,所述芯片靠近所述第一表面,所述辅助网靠近所述第二表面,所述辅助网的热膨胀系数小于所述封装层的热膨胀系数。In one embodiment, the chip is adjacent to the first surface, and the auxiliary net is adjacent to the second surface, and the auxiliary network has a thermal expansion coefficient smaller than a thermal expansion coefficient of the encapsulation layer.
在其中一个实施例中,所述封装层的热膨胀系数、所述芯片的热膨胀系数、以及所述辅助网的热膨胀系数使得固化所述封装材料的过程中,所述芯片、所述辅助网和所述封装材料构成的整体热应力均衡。In one embodiment, the coefficient of thermal expansion of the encapsulation layer, the coefficient of thermal expansion of the chip, and the coefficient of thermal expansion of the auxiliary net are such that the chip, the auxiliary net, and the The overall thermal stress balance of the encapsulating material.
在其中一个实施例中,所述辅助网的最大厚度大于所述芯片的最大厚度。In one of the embodiments, the maximum thickness of the auxiliary net is greater than the maximum thickness of the chip.
在其中一个实施例中,所述辅助网的厚度至少小于所述封装层的厚度100微米。In one embodiment, the auxiliary mesh has a thickness at least less than 100 microns of the thickness of the encapsulation layer.
在其中一个实施例中,所述封装层的总面积减去所述芯片所占面积后剩余的面积当中,所述辅助网占10%至90%。In one embodiment, the auxiliary network accounts for 10% to 90% of the total area of the encapsulation layer minus the area occupied by the chip.
在其中一个实施例中,所述辅助网为金属、陶瓷、或塑料。In one embodiment, the auxiliary mesh is metal, ceramic, or plastic.
在其中一个实施例中,所述封装材料为模压成型材料。In one embodiment, the encapsulating material is a compression molded material.
在其中一个实施例中,所述辅助网的杨氏模量大于所述封装层的杨氏模量。In one embodiment, the Young's modulus of the auxiliary mesh is greater than the Young's modulus of the encapsulation layer.
一种芯片扇出电路,包括:芯片、由封装材料固化成的封装层、以及辅助网;其中,所述芯片至少部分嵌设于所述封装层内,所述辅助网至少部分嵌设于所述封装层内,所述封装层将所述芯片和所述辅助网封装固定,所述辅助网用于削减所述封装材料固化成所述封装层所产生的弯曲或变形。A chip fan-out circuit includes: a chip, an encapsulation layer formed by encapsulating a material, and an auxiliary net; wherein the chip is at least partially embedded in the encapsulation layer, and the auxiliary net is at least partially embedded in the In the encapsulation layer, the encapsulation layer fixes the chip and the auxiliary net package, and the auxiliary net is used to reduce bending or deformation caused by curing of the encapsulation material into the encapsulation layer.
在其中一个实施例中,所述辅助网设有窗口,所述芯片至少部分伸入所述窗口。In one of the embodiments, the auxiliary net is provided with a window, the chip at least partially extending into the window.
在其中一个实施例中,所述封装层具有相对的第一表面以及第二表面;所述芯片和所述辅助网靠近所述第一表面;或者,所述芯片靠近所述第一表面,所述辅助网靠近所述第二表面。In one embodiment, the encapsulation layer has opposing first and second surfaces; the chip and the auxiliary mesh are adjacent to the first surface; or the chip is adjacent to the first surface, The auxiliary net is adjacent to the second surface.
在其中一个实施例中,所述芯片靠近所述第一表面,所述辅助网靠近所述第一表面,所述辅助网的热膨胀系数大于所述封装层的热膨胀系数。In one embodiment, the chip is adjacent to the first surface, the auxiliary net is adjacent to the first surface, and the auxiliary network has a thermal expansion coefficient greater than a thermal expansion coefficient of the encapsulation layer.
在其中一个实施例中,所述芯片和所述辅助网均与所述第一表面平齐,并 且所述芯片、所述辅助网、以及所述第一表面构成的平面平整。In one embodiment, the chip and the auxiliary net are both flush with the first surface, and And the plane formed by the chip, the auxiliary net, and the first surface is flat.
在其中一个实施例中,所述芯片靠近所述第一表面,所述辅助网靠近所述第二表面,所述辅助网的热膨胀系数小于所述封装层的热膨胀系数。In one embodiment, the chip is adjacent to the first surface, and the auxiliary net is adjacent to the second surface, and the auxiliary network has a thermal expansion coefficient smaller than a thermal expansion coefficient of the encapsulation layer.
在其中一个实施例中,所述封装层的热膨胀系数、所述芯片的热膨胀系数、以及所述辅助网的热膨胀系数使得固化所述封装材料的过程中,所述芯片、所述辅助网和所述封装材料构成的整体热应力均衡。In one embodiment, the coefficient of thermal expansion of the encapsulation layer, the coefficient of thermal expansion of the chip, and the coefficient of thermal expansion of the auxiliary net are such that the chip, the auxiliary net, and the The overall thermal stress balance of the encapsulating material.
在其中一个实施例中,所述辅助网为金属、陶瓷、或塑料。In one embodiment, the auxiliary mesh is metal, ceramic, or plastic.
在其中一个实施例中,所述封装材料为模压成型材料。In one embodiment, the encapsulating material is a compression molded material.
在其中一个实施例中,所述辅助网的杨氏模量大于所述封装层的杨氏模量。In one embodiment, the Young's modulus of the auxiliary mesh is greater than the Young's modulus of the encapsulation layer.
一种芯片扇出方法,包括:在载板上设置芯片,并在载板上设置辅助纤维和封装材料;所述芯片至少部分嵌于所述封装材料内,所述辅助纤维至少部分嵌于所述封装材料内,将所述封装材料固化成封装层,所述封装层将芯片和辅助纤维封装固定;将所述载板与所述芯片或所述封装层或所述辅助纤维脱离。A chip fan-out method includes: disposing a chip on a carrier board, and disposing an auxiliary fiber and a packaging material on the carrier board; the chip is at least partially embedded in the packaging material, and the auxiliary fiber is at least partially embedded in the package Within the encapsulation material, the encapsulation material is cured into an encapsulation layer that secures the chip and the auxiliary fiber package; the carrier plate is detached from the chip or the encapsulation layer or the auxiliary fiber.
在其中一个实施例中,所述辅助纤维构成辅助网,所述辅助网设有窗口,所述芯片至少部分伸入所述窗口。In one of the embodiments, the auxiliary fibers constitute an auxiliary net, the auxiliary net being provided with a window, the chip at least partially extending into the window.
在其中一个实施例中,所述芯片和所述辅助网均抵靠所述载板。In one of the embodiments, the chip and the auxiliary mesh both abut the carrier.
在其中一个实施例中,所述封装层朝向所述载板的一面为第一表面,与所述第一表面相对的一面为第二表面;靠近所述第一表面设置所述芯片和所述辅助纤维;或者,靠近所述第一表面设置所述芯片,靠近所述第二表面设置所述辅助纤维。In one embodiment, the one side of the encapsulation layer facing the carrier is a first surface, and the side opposite to the first surface is a second surface; the chip is disposed adjacent to the first surface and An auxiliary fiber; or, the chip is disposed adjacent to the first surface, and the auxiliary fiber is disposed adjacent to the second surface.
在其中一个实施例中,所述芯片靠近所述第一表面,所述辅助纤维靠近所述第一表面,所述辅助纤维的热膨胀系数大于所述封装层的热膨胀系数。In one embodiment, the chip is adjacent to the first surface, the auxiliary fiber is adjacent to the first surface, and the auxiliary fiber has a coefficient of thermal expansion greater than a coefficient of thermal expansion of the encapsulation layer.
在其中一个实施例中,所述芯片靠近所述第一表面,所述辅助纤维靠近所述第二表面,所述辅助纤维的热膨胀系数小于所述封装层的热膨胀系数。In one embodiment, the chip is adjacent to the first surface, the auxiliary fiber is adjacent to the second surface, and the auxiliary fiber has a coefficient of thermal expansion that is less than a coefficient of thermal expansion of the encapsulation layer.
在其中一个实施例中,所述封装层的热膨胀系数、所述芯片的热膨胀系数、以及所述辅助纤维的热膨胀系数使得固化所述封装材料的过程中,所述芯片、所述辅助网和所述封装材料构成的整体热应力均衡。 In one embodiment, the coefficient of thermal expansion of the encapsulation layer, the coefficient of thermal expansion of the chip, and the coefficient of thermal expansion of the auxiliary fiber are such that the chip, the auxiliary net, and the The overall thermal stress balance of the encapsulating material.
在其中一个实施例中,所述辅助纤维为金属、陶瓷、或塑料。In one embodiment, the auxiliary fibers are metal, ceramic, or plastic.
在其中一个实施例中,所述封装材料为模压成型材料。In one embodiment, the encapsulating material is a compression molded material.
在其中一个实施例中,所述辅助纤维的杨氏模量大于所述封装层的杨氏模量。In one embodiment, the Young's modulus of the auxiliary fibers is greater than the Young's modulus of the encapsulating layer.
一种芯片扇出电路,包括:芯片、由封装材料固化成的封装层、以及辅助纤维;其中,所述芯片至少部分嵌设于所述封装层内,所述辅助纤维至少部分嵌设于所述封装层内,所述封装层将所述芯片和所述辅助纤维封装固定,所述辅助纤维用于削减所述封装材料固化成所述封装层所产生的弯曲或变形。A chip fan-out circuit includes: a chip, an encapsulation layer cured from an encapsulation material, and an auxiliary fiber; wherein the chip is at least partially embedded in the encapsulation layer, and the auxiliary fiber is at least partially embedded in the In the encapsulation layer, the encapsulation layer fixes the chip and the auxiliary fiber package, and the auxiliary fiber is used to reduce bending or deformation caused by curing of the encapsulation material into the encapsulation layer.
在其中一个实施例中,所述辅助纤维构成辅助网,所述辅助网设有窗口,所述芯片至少部分伸入所述窗口。In one of the embodiments, the auxiliary fibers constitute an auxiliary net, the auxiliary net being provided with a window, the chip at least partially extending into the window.
在其中一个实施例中,所述封装层具有相对的第一表面以及第二表面;所述芯片和所述辅助纤维靠近所述第一表面;或者,所述芯片靠近所述第一表面,所述辅助纤维靠近所述第二表面。In one embodiment, the encapsulation layer has opposing first and second surfaces; the chip and the auxiliary fiber are adjacent to the first surface; or the chip is adjacent to the first surface, The auxiliary fibers are adjacent to the second surface.
在其中一个实施例中,所述芯片靠近所述第一表面,所述辅助网靠近所述第一表面,所述辅助网的热膨胀系数大于所述封装层的热膨胀系数。In one embodiment, the chip is adjacent to the first surface, the auxiliary net is adjacent to the first surface, and the auxiliary network has a thermal expansion coefficient greater than a thermal expansion coefficient of the encapsulation layer.
在其中一个实施例中,所述芯片和所述辅助网均与所述第一表面平齐,并且所述芯片、所述辅助网、以及所述第一表面构成的平面平整。In one of the embodiments, the chip and the auxiliary net are both flush with the first surface, and the plane formed by the chip, the auxiliary net, and the first surface is flat.
在其中一个实施例中,所述芯片靠近所述第一表面,所述辅助网靠近所述第二表面,所述辅助网的热膨胀系数小于所述封装层的热膨胀系数。In one embodiment, the chip is adjacent to the first surface, and the auxiliary net is adjacent to the second surface, and the auxiliary network has a thermal expansion coefficient smaller than a thermal expansion coefficient of the encapsulation layer.
在其中一个实施例中,所述封装层的热膨胀系数、所述芯片的热膨胀系数、以及所述辅助纤维的热膨胀系数使得固化所述封装材料的过程中,所述芯片、所述辅助纤维和所述封装材料构成的整体热应力趋于均衡。In one embodiment, the coefficient of thermal expansion of the encapsulation layer, the coefficient of thermal expansion of the chip, and the coefficient of thermal expansion of the auxiliary fiber are such that the chip, the auxiliary fiber, and the The overall thermal stress of the encapsulating material tends to be balanced.
在其中一个实施例中,所述辅助纤维为金属、陶瓷、或塑料。In one embodiment, the auxiliary fibers are metal, ceramic, or plastic.
在其中一个实施例中,所述封装材料为模压成型材料。In one embodiment, the encapsulating material is a compression molded material.
在其中一个实施例中,所述辅助纤维的杨氏模量大于所述封装层的杨氏模量。In one embodiment, the Young's modulus of the auxiliary fibers is greater than the Young's modulus of the encapsulating layer.
本发明的有益效果在于: The beneficial effects of the invention are:
1、一种芯片扇出方法,包括:在载板上设置芯片,并在载板上设置辅助网和封装材料;芯片至少部分嵌于封装材料内,辅助网至少部分嵌于封装材料内,将封装材料固化成封装层,封装层将芯片和辅助网封装固定;将载板与芯片或封装层或辅助网脱离。A method for fan-out of a chip, comprising: disposing a chip on a carrier board, and setting an auxiliary net and a packaging material on the carrier board; the chip is at least partially embedded in the encapsulation material, and the auxiliary net is at least partially embedded in the encapsulation material, The encapsulating material is cured into an encapsulation layer that secures the chip and the auxiliary mesh package; the carrier is detached from the chip or encapsulation layer or the auxiliary mesh.
在载板的支撑下设置芯片,芯片的放置位置精准,可以设置一个芯片或设置两个以上的芯片,当设置两个以上的芯片时,两个芯片之间的相对位置也可以精准设置。芯片至少部分嵌设于封装材料内(包括芯片完全嵌于封装材料内,芯片部分嵌于封装材料内、另一部分露出封装材料,芯片恰好全部嵌于封装材料内并且芯片的其中一个表面从封装层表面裸露),当封装材料固化时,就将芯片相对于封装层的位置固定了,如果设置了两个以上的芯片,那么两个芯片之间的相对位置被封装层固定了。辅助网至少部分嵌设于封装材料内(包括辅助网完全嵌于封装材料内,辅助网部分嵌于封装材料内、另一部分露出封装材料,辅助网恰好全部嵌于封装材料内并且芯片的其中一个表面从封装层表面裸露),封装材料固化时过程中当封装材料有变形趋势时,辅助网和封装层之间发生力的相互作用力,辅助网缓解封装层的热不均衡导致的应力,辅助层可以牵拉或者推挤封装材料,避免封装材料的热不均衡发生变形。如此,封装层实现了芯片封装,辅助网在封装材料固化为封装层的过程中避免封装材料和芯片构成的整体发生弯曲。The chip is arranged under the support of the carrier board, and the placement position of the chip is precise. One chip or more than two chips can be set. When two or more chips are set, the relative positions between the two chips can also be accurately set. The chip is at least partially embedded in the package material (including the chip is completely embedded in the package material, the chip portion is embedded in the package material, and the other portion is exposed to the package material, the chip is completely embedded in the package material and one surface of the chip is from the package layer The surface is bare. When the encapsulation material is cured, the position of the chip relative to the encapsulation layer is fixed. If more than two chips are provided, the relative position between the two chips is fixed by the encapsulation layer. The auxiliary net is at least partially embedded in the encapsulating material (including the auxiliary net is completely embedded in the encapsulating material, the auxiliary net portion is embedded in the encapsulating material, and the other portion is exposed to the encapsulating material, and the auxiliary net is exactly embedded in the encapsulating material and one of the chips The surface is exposed from the surface of the encapsulation layer. When the encapsulation material has a tendency to deform during curing, the interaction force between the auxiliary net and the encapsulation layer occurs, and the auxiliary net relieves the stress caused by the thermal imbalance of the encapsulation layer. The layer can pull or push the encapsulating material to avoid deformation of the thermal imbalance of the encapsulating material. In this way, the encapsulation layer realizes the chip encapsulation, and the auxiliary net avoids the overall bending of the encapsulation material and the chip composition during the process of curing the encapsulation material into the encapsulation layer.
优选的,当封装材料固化前是颗粒状或液态或可流动时,封装材料可以进入辅助网内,固化封装材料的过程中当封装材料有变形趋势时,增加辅助网与封装材料之间相互作用力,使辅助网更好的缓解、均衡封装材料的固化应力,避免封装层弯曲或变形。Preferably, when the encapsulating material is granular or liquid or flowable before curing, the encapsulating material can enter the auxiliary net, and the interaction between the auxiliary net and the encapsulating material is increased when the encapsulating material has a tendency to deform during curing of the encapsulating material. The force enables the auxiliary net to better alleviate and balance the curing stress of the encapsulating material and avoid bending or deformation of the encapsulating layer.
2、辅助网设有窗口,芯片至少部分伸入窗口,可以是一个芯片对应伸入一个窗口中,也可以是两个以上的芯片共同深入一个窗口中,辅助网环绕或部分环绕于芯片周围。由于芯片的热膨胀系数与封装材料的热膨胀系数不一样,通常是芯片的热膨胀系数小于封装材料的热膨胀系数,所以设置了芯片部分热不均衡更为明显,将芯片伸入辅助网的窗口中,辅助网环绕或部分环绕于芯片 周围,可以更好的缓解热不均衡引起的应力,更好地将芯片保持在预定的位置,保障芯片之间的连接关系不会被变形或弯曲破坏。此外,芯片穿插于辅助网的窗口,可以减小整体的厚度。2. The auxiliary net is provided with a window, and the chip at least partially protrudes into the window, and may be one chip correspondingly protruded into one window, or two or more chips may be deeply penetrated into one window, and the auxiliary net surrounds or partially surrounds the chip. Since the coefficient of thermal expansion of the chip is different from the coefficient of thermal expansion of the package material, usually the coefficient of thermal expansion of the chip is smaller than the coefficient of thermal expansion of the package material, so that the thermal imbalance of the chip portion is more obvious, and the chip is inserted into the window of the auxiliary network, and the auxiliary The mesh surrounds or partially surrounds the chip Around, it can better alleviate the stress caused by thermal imbalance, and better keep the chip in a predetermined position, so as to ensure that the connection relationship between the chips is not deformed or bent. In addition, the chip is inserted into the window of the auxiliary net to reduce the overall thickness.
3、芯片和辅助网均抵靠载板。芯片上具有对外连接的触点,芯片设有触点的一面朝向载板,移除载板后,芯片和辅助网恰好嵌入封装层内,芯片的触点未被封装层覆盖而是裸露的,可以将芯片的触点与连线进行电连接;而此时芯片伸入辅助网的窗口内,辅助网尽可能地靠近芯片设有触点的一面,这样尽可能的保持芯片的所在位置及其附近不发生变形、保持芯片的触点位置不变,在对芯片的触点与连线进行电连接的过程中可以实现精准对位,保证芯片触点和连线的精准电连接。3. The chip and the auxiliary network both abut the carrier board. The chip has externally connected contacts, and the chip has a contact side facing the carrier. After the carrier is removed, the chip and the auxiliary network are just embedded in the package layer, and the contacts of the chip are not covered by the package layer but are exposed. The contacts of the chip can be electrically connected to the connection; at this time, the chip protrudes into the window of the auxiliary net, and the auxiliary net is as close as possible to the side of the chip with the contacts, so as to keep the position of the chip as much as possible and There is no deformation in the vicinity, and the position of the contacts of the chip is kept unchanged. In the process of electrically connecting the contacts and the wires of the chip, precise alignment can be realized, and the precise electrical connection of the chip contacts and the wires can be ensured.
传统方法不能克服封装变形的问题,通常需要加宽连线的线宽、增大连线之间的间隙来弥补变形带来的错位,不能获得高密度的连线,限制了芯片的我传输速度。但是,本发明方法可以克服封装变形,可以制作连线的线宽小于10微米,提高连线的密度,在相同空间内设置更多的连线、获得更多的数据传输通道。The traditional method can not overcome the problem of package deformation. It is usually necessary to widen the line width of the connection, increase the gap between the lines to compensate for the misalignment caused by the deformation, and cannot obtain a high-density connection, which limits the transmission speed of the chip. . However, the method of the present invention can overcome the deformation of the package, and can make the line width of the connection less than 10 micrometers, increase the density of the connection, and set more connections in the same space to obtain more data transmission channels.
4、封装层朝向载板的一面为第一表面,与第一表面相对的一面为第二表面,靠近第一表面设置芯片和辅助网;一方面,由于第一表面靠近载板,更有利于限制芯片附近的封装层变形;另一方面,由于芯片的热膨胀系数与封装材料的热膨胀系数不一样,通常是芯片的热膨胀系数小于封装材料的热膨胀系数,所以设置了芯片部分热不均衡更为明显,芯片和辅助网同时设置在靠近第一表面的位置,辅助网限制第一表面的变形,从而保证芯片的位置不变。4. The one side of the encapsulation layer facing the carrier board is a first surface, and the side opposite to the first surface is a second surface, and the chip and the auxiliary net are disposed adjacent to the first surface; on the one hand, since the first surface is close to the carrier board, it is more advantageous Limiting the deformation of the encapsulation layer near the chip; on the other hand, since the thermal expansion coefficient of the chip is different from the thermal expansion coefficient of the encapsulation material, usually the thermal expansion coefficient of the chip is smaller than the thermal expansion coefficient of the encapsulation material, so that the thermal imbalance of the chip portion is more obvious. The chip and the auxiliary net are simultaneously disposed at a position close to the first surface, and the auxiliary net limits the deformation of the first surface, thereby ensuring the position of the chip.
或者,靠近第一表面设置芯片,靠近第二表面设置辅助网。由于芯片的热膨胀系数与封装材料的热膨胀系数不一样,通常是芯片的热膨胀系数小于封装材料的热膨胀系数,所以靠近芯片的第一表面更显得热不均衡,但是封装层通常是片状的,可以通过在靠近第二表面设置辅助网,限制第二表面的变形来限制第一表面的变形。Alternatively, a chip is disposed adjacent to the first surface, and an auxiliary net is disposed adjacent to the second surface. Since the coefficient of thermal expansion of the chip is different from the coefficient of thermal expansion of the package material, usually the coefficient of thermal expansion of the chip is smaller than the coefficient of thermal expansion of the package material, so the first surface near the chip is more thermally uneven, but the package layer is usually sheet-like, The deformation of the first surface is limited by providing an auxiliary mesh near the second surface to limit deformation of the second surface.
5、芯片靠近第一表面,辅助网靠近第一表面,辅助网的热膨胀系数大于 封装层的热膨胀系数。辅助网与芯片同时设在靠近第一表面的位置,芯片的热膨胀系数小于封装材料的热膨胀系数,辅助网的热膨胀系数大于封装层的热膨胀系数,温度变化时芯片的热应力和辅助纤维的热应力相互抵消、辅助网的形变量和封装层的形变量相抵消,从而避免封装层变形,特别是,第一表面是封装层朝向载板的一面,辅助网与芯片同时设在靠近第一表面的位置,可以避免第一表面变形。辅助网的热膨胀系数大于封装层的热膨胀系数,在降温固化封装材料的过程中,辅助网的收缩量大于封装材料的收缩量,辅助网从第一表面牵拉封装层,使封装层不弯曲。5. The chip is close to the first surface, the auxiliary net is close to the first surface, and the thermal expansion coefficient of the auxiliary net is greater than The coefficient of thermal expansion of the encapsulation layer. The auxiliary net and the chip are disposed close to the first surface at the same time, the thermal expansion coefficient of the chip is smaller than the thermal expansion coefficient of the packaging material, the thermal expansion coefficient of the auxiliary net is larger than the thermal expansion coefficient of the encapsulation layer, the thermal stress of the chip and the thermal stress of the auxiliary fiber when the temperature changes. The mutual offset, the shape variable of the auxiliary net and the deformation of the encapsulation layer are offset to avoid deformation of the encapsulation layer. In particular, the first surface is the side of the encapsulation layer facing the carrier, and the auxiliary net and the chip are disposed adjacent to the first surface at the same time. The position can avoid deformation of the first surface. The thermal expansion coefficient of the auxiliary net is larger than the thermal expansion coefficient of the encapsulating layer. In the process of cooling and curing the encapsulating material, the shrinkage of the auxiliary net is greater than the shrinkage of the encapsulating material, and the auxiliary net pulls the encapsulating layer from the first surface so that the encapsulating layer does not bend.
6、芯片靠近第一表面,芯片的热膨胀系数小于封装材料的热膨胀系数;辅助网靠近第二表面,辅助网的热膨胀系数小于封装层的热膨胀系数,芯片的应力和辅助网的应力在封装层上是对称或近似对称的,避免封装层变形。辅助网的热膨胀系数小于封装层的热膨胀系数,在降温固化封装颗粒的过程中,辅助网的收缩量小于封装层的收缩量,辅助网抵抗封装层的在第二表面的收缩,使封装层不弯曲。6. The chip is close to the first surface, the thermal expansion coefficient of the chip is smaller than the thermal expansion coefficient of the packaging material; the auxiliary mesh is close to the second surface, the thermal expansion coefficient of the auxiliary mesh is smaller than the thermal expansion coefficient of the encapsulation layer, and the stress of the chip and the stress of the auxiliary mesh are on the encapsulation layer. It is symmetrical or approximately symmetrical to avoid deformation of the encapsulation layer. The thermal expansion coefficient of the auxiliary net is smaller than the thermal expansion coefficient of the encapsulating layer. During the process of cooling and curing the encapsulating particles, the shrinkage of the auxiliary net is smaller than the shrinkage of the encapsulating layer, and the auxiliary net resists shrinkage of the encapsulating layer on the second surface, so that the encapsulating layer is not bending.
优选的,所述辅助网的最大厚度大于所述芯片的最大厚度。辅助网防止封装层变形的同时,可以为芯片提供支撑,避免芯片损坏。Preferably, the maximum thickness of the auxiliary net is greater than the maximum thickness of the chip. The auxiliary net can prevent the deformation of the encapsulation layer and provide support for the chip to avoid chip damage.
所述辅助网的厚度使之在如图5所示的横截面上,辅助网在如图5所示上下方向上的厚度,类似的,所述芯片的厚度是指如图5所示的横截面上,芯片在如图5所示上下方向上上的厚度。The thickness of the auxiliary net is such that it is in the cross section as shown in FIG. 5, and the thickness of the auxiliary net is in the up and down direction as shown in FIG. 5. Similarly, the thickness of the chip refers to the horizontal direction as shown in FIG. In the cross section, the thickness of the chip in the up and down direction as shown in FIG.
优选的,所述辅助网的厚度至少小于所述封装层的厚度100微米,利于封装材料流动,保证封装材料充满芯片周围的空间,使封装层更好的固定芯片。并且,能够使封装材料固化为封装层后的表面平整。Preferably, the thickness of the auxiliary net is at least 100 micrometers less than the thickness of the encapsulating layer, which facilitates the flow of the encapsulating material, ensures that the encapsulating material fills the space around the chip, and enables the encapsulating layer to better fix the chip. Moreover, the surface of the encapsulating material after curing the encapsulating layer can be flattened.
优选的,所述封装层的总面积减去所述芯片所占面积后剩余的面积当中,所述辅助网占10%至90%。利于封装材料流动,保证封装材料充满芯片周围的空间,使封装层更好的固定芯片。Preferably, the auxiliary network accounts for 10% to 90% of the total area of the encapsulation layer minus the area occupied by the chip. Conducive to the flow of the packaging material, to ensure that the packaging material fills the space around the chip, so that the encapsulation layer can better fix the chip.
7、封装层的热膨胀系数、芯片的热膨胀系数、以及辅助网的热膨胀系数使得固化封装材料的过程中,芯片、辅助网和封装材料构成的整体热应力均衡。 选择芯片、辅助网和封装材料的热膨胀系数和所设置的位置,可以使封装层、芯片、辅助纤维的整体形变量相抵消、热应力相互均衡,避免变形。7. The thermal expansion coefficient of the encapsulation layer, the thermal expansion coefficient of the chip, and the thermal expansion coefficient of the auxiliary net make the overall thermal stress of the chip, the auxiliary net and the encapsulating material balanced during the process of curing the encapsulating material. Selecting the thermal expansion coefficient and the set position of the chip, the auxiliary net and the encapsulating material can offset the integral shape variables of the encapsulation layer, the chip and the auxiliary fiber, and balance the thermal stress to avoid deformation.
8、辅助网为金属、陶瓷、或塑料。8. The auxiliary net is metal, ceramic, or plastic.
9、封装材料为模压成型材料,模压成型材料(molding compound)可以通过固化形成封装层,封装层将芯片封装固定。模压成型材料包括但不限于模压树脂。9. The encapsulating material is a molding material, and the molding compound can form an encapsulation layer by curing, and the encapsulation layer fixes the chip package. Molded molding materials include, but are not limited to, molded resins.
10、辅助网的杨氏模量大于封装层的杨氏模量,辅助网本身的抗弯能力强,可以抵抗封装层的变形,例如可以选择金属材料制作辅助网。10. The Young's modulus of the auxiliary net is larger than the Young's modulus of the encapsulation layer. The auxiliary net itself has strong bending resistance and can resist the deformation of the encapsulation layer. For example, the auxiliary material can be made by selecting a metal material.
11、一种芯片扇出方法,包括:在载板上设置芯片,并在载板上设置辅助纤维和封装材料;芯片至少部分嵌于封装材料内,辅助纤维至少部分嵌于封装材料内,将封装材料固化成封装层,封装层将芯片和辅助纤维封装固定;将载板与芯片或封装层或辅助纤维脱离。11. A chip fanout method comprising: disposing a chip on a carrier board and disposing an auxiliary fiber and a packaging material on the carrier board; the chip is at least partially embedded in the encapsulation material, and the auxiliary fiber is at least partially embedded in the encapsulation material, The encapsulating material is cured into an encapsulation layer that secures the chip and the auxiliary fiber package; the carrier is detached from the chip or encapsulation layer or auxiliary fibers.
在载板的支撑下设置芯片,芯片的放置位置精准,可以设置一个芯片或设置两个以上的芯片,当设置两个以上的芯片时,两个芯片之间的相对位置也可以精准设置。芯片至少部分嵌设于封装材料内(包括芯片完全嵌于封装材料内,芯片部分嵌于封装材料内、另一部分露出封装材料,芯片恰好全部嵌于封装材料内并且芯片的其中一个表面从封装层表面裸露),当封装材料固化时,就将芯片相对于封装层的位置固定了,如果设置了两个以上的芯片,那么两个芯片之间的相对位置被封装层固定了。辅助纤维至少部分嵌设于封装材料内(包括辅助纤维完全嵌于封装材料内,辅助纤维部分嵌于封装材料内、另一部分露出封装材料,辅助纤维恰好全部嵌于封装材料内并且芯片的其中一个表面从封装层表面裸露),当封装材料固化时,辅助纤维和封装层之间发生力的相互作用力,辅助纤维缓解封装层的热不均衡导致的应力,辅助层可以牵拉或者推挤封装材料,避免封装材料的热不均衡发生变形。如此,封装层实现了芯片封装,辅助纤维在封装材料固化为封装层的过程中避免封装材料和芯片构成的整体发生弯曲。The chip is arranged under the support of the carrier board, and the placement position of the chip is precise. One chip or more than two chips can be set. When two or more chips are set, the relative positions between the two chips can also be accurately set. The chip is at least partially embedded in the package material (including the chip is completely embedded in the package material, the chip portion is embedded in the package material, and the other portion is exposed to the package material, the chip is completely embedded in the package material and one surface of the chip is from the package layer The surface is bare. When the encapsulation material is cured, the position of the chip relative to the encapsulation layer is fixed. If more than two chips are provided, the relative position between the two chips is fixed by the encapsulation layer. The auxiliary fiber is at least partially embedded in the encapsulating material (including the auxiliary fiber is completely embedded in the encapsulating material, the auxiliary fiber portion is embedded in the encapsulating material, and the other portion is exposed to the encapsulating material, and the auxiliary fiber is completely embedded in the encapsulating material and one of the chips The surface is exposed from the surface of the encapsulation layer. When the encapsulation material is cured, a force interaction force is generated between the auxiliary fiber and the encapsulation layer, the auxiliary fiber relieves the stress caused by the thermal imbalance of the encapsulation layer, and the auxiliary layer can pull or push the package. Material to avoid deformation of the thermal imbalance of the packaging material. In this way, the encapsulation layer realizes chip encapsulation, and the auxiliary fiber avoids the overall bending of the encapsulation material and the chip composition during the process of curing the encapsulation material into the encapsulation layer.
辅助纤维可以分布在封装层的任意位置,优选的,可以设置两个以上的辅 助纤维,辅助纤维在封装层内纵横交错、或者相互缠绕,当封装层有变形趋势时,辅助纤维与封装层相互之间产生力的相互作用,使封装材料应力均衡,辅助纤维辅助支撑封装层的外形,避免封装材料的固化应力带来的变形。The auxiliary fibers may be distributed at any position of the encapsulating layer. Preferably, two or more auxiliary materials may be provided. The auxiliary fiber is interlaced or intertwined in the encapsulating layer. When the encapsulating layer has a tendency to deform, the auxiliary fiber and the encapsulating layer interact with each other to stress balance the encapsulating material, and the auxiliary fiber assists the supporting encapsulating layer. The shape avoids the deformation caused by the curing stress of the encapsulating material.
12、辅助纤维构成辅助网,辅助网作用与上述2中描述类似。12. The auxiliary fibers constitute an auxiliary net, and the auxiliary net functions are similar to those described in the above 2.
13、芯片和辅助网均抵靠载板。作用与上述3中描述类似。13. The chip and the auxiliary network both abut the carrier board. The effect is similar to that described in the above 3.
14、封装层朝向载板的一面为第一表面,与第一表面相对的一面为第二表面,靠近第一表面设置芯片和辅助纤维;一方面,由于第一表面靠近载板,更有利于限制芯片附近的封装层变形;另一方面,由于芯片的热膨胀系数与封装材料的热膨胀系数不一样,通常是芯片的热膨胀系数小于封装材料的热膨胀系数,所以设置了芯片部分热不均衡更为明显,芯片和辅助纤维同时设置在靠近第一表面的位置,辅助纤维限制第一表面的变形,从而保证芯片的位置不变。14. The one side of the encapsulating layer facing the carrier board is a first surface, and the side opposite to the first surface is a second surface, and the chip and the auxiliary fiber are disposed adjacent to the first surface; on the one hand, the first surface is closer to the carrier board, which is more advantageous Limiting the deformation of the encapsulation layer near the chip; on the other hand, since the thermal expansion coefficient of the chip is different from the thermal expansion coefficient of the encapsulation material, usually the thermal expansion coefficient of the chip is smaller than the thermal expansion coefficient of the encapsulation material, so that the thermal imbalance of the chip portion is more obvious. The chip and the auxiliary fiber are simultaneously disposed at a position close to the first surface, and the auxiliary fiber limits the deformation of the first surface, thereby ensuring the position of the chip.
或者,靠近第一表面设置芯片,靠近第二表面设置辅助纤维。由于芯片的热膨胀系数与封装材料的热膨胀系数不一样,通常是芯片的热膨胀系数小于封装材料的热膨胀系数,所以靠近芯片的第一表面更显得热不均衡,但是封装层通常是片状的,可以通过在靠近第二表面设置辅助纤维,限制第二表面的变形来限制第一表面的变形。Alternatively, a chip is disposed adjacent to the first surface, and an auxiliary fiber is disposed adjacent to the second surface. Since the coefficient of thermal expansion of the chip is different from the coefficient of thermal expansion of the package material, usually the coefficient of thermal expansion of the chip is smaller than the coefficient of thermal expansion of the package material, so the first surface near the chip is more thermally uneven, but the package layer is usually sheet-like, The deformation of the first surface is limited by providing an auxiliary fiber near the second surface to limit deformation of the second surface.
15、芯片靠近第一表面,辅助纤维靠近第一表面,辅助纤维的热膨胀系数大于封装层的热膨胀系数。辅助纤维与芯片同时设在靠近第一表面的位置,芯片的热膨胀系数小于封装材料的热膨胀系数,辅助纤维的热膨胀系数大于封装层的热膨胀系数,温度变化时芯片的热应力和辅助纤维的热应力相互抵消、辅助纤维的形变量和封装层的形变量相抵消,从而避免封装层变形,特别是,第一表面是封装层朝向载板的一面,载板提供了平整的支撑,辅助纤维与芯片同时设在靠近第一表面的位置,可以进一步避免第一表面变形。15. The chip is adjacent to the first surface, the auxiliary fiber is adjacent to the first surface, and the thermal expansion coefficient of the auxiliary fiber is greater than the thermal expansion coefficient of the encapsulation layer. The auxiliary fiber and the chip are disposed close to the first surface at the same time, the thermal expansion coefficient of the chip is smaller than the thermal expansion coefficient of the packaging material, the thermal expansion coefficient of the auxiliary fiber is larger than the thermal expansion coefficient of the encapsulation layer, the thermal stress of the chip and the thermal stress of the auxiliary fiber when the temperature changes. The mutual offset, the deformation of the auxiliary fiber and the deformation of the encapsulation layer cancel out, thereby avoiding deformation of the encapsulation layer. In particular, the first surface is the side of the encapsulation layer facing the carrier plate, and the carrier plate provides flat support, auxiliary fiber and chip. Simultaneously located near the first surface, the deformation of the first surface can be further avoided.
16、芯片靠近第一表面,芯片的热膨胀系数小于封装材料的热膨胀系数;辅助网靠近第二表面,辅助纤维的热膨胀系数小于封装层的热膨胀系数,芯片的应力和辅助纤维的应力在封装层上是对称或近似对称的、相互抵消,辅助纤维的形变量和封装层的形变量相抵消,避免封装层变形。 16. The chip is close to the first surface, the thermal expansion coefficient of the chip is smaller than the thermal expansion coefficient of the packaging material; the auxiliary mesh is close to the second surface, the thermal expansion coefficient of the auxiliary fiber is smaller than the thermal expansion coefficient of the encapsulation layer, and the stress of the chip and the stress of the auxiliary fiber are on the encapsulation layer. They are symmetric or approximately symmetrical, cancel each other out, and the deformation of the auxiliary fiber and the deformation of the encapsulation layer cancel out to avoid deformation of the encapsulation layer.
17、封装层的热膨胀系数、芯片的热膨胀系数、以及辅助纤维的热膨胀系数使得固化封装材料的过程中,芯片、辅助纤维和封装材料构成的整体热应力均衡。选择芯片、辅助纤维和封装材料的热膨胀系数和所设置的位置,可以使封装层、芯片、辅助纤维的整体形变量相抵消、热应力相互均衡,避免变形。17. The thermal expansion coefficient of the encapsulating layer, the thermal expansion coefficient of the chip, and the thermal expansion coefficient of the auxiliary fiber make the overall thermal stress of the chip, the auxiliary fiber and the encapsulating material balanced during the process of curing the encapsulating material. Selecting the thermal expansion coefficient of the chip, the auxiliary fiber and the encapsulating material and the set position can offset the integral shape variables of the encapsulation layer, the chip and the auxiliary fiber, and balance the thermal stress to avoid deformation.
18、辅助纤维为金属、陶瓷、或塑料。18. The auxiliary fiber is metal, ceramic, or plastic.
19、封装材料为模压成型材料。19. The packaging material is a compression molding material.
20、辅助纤维的杨氏模量大于封装层的杨氏模量。辅助纤维本身的抗弯能力强,可以抵抗封装层的变形,尤其是可以设置两个以上的辅助纤维,辅助纤维在封装层内纵横交叉、或者相互缠绕,辅助纤维相互之间形成牵拉的关系、结构稳固,更有利于阻止封装材料的固化应力带来的变形。例如可以选择金属材料制作辅助纤维。20. The Young's modulus of the auxiliary fiber is greater than the Young's modulus of the encapsulating layer. The auxiliary fiber itself has strong bending resistance and can resist deformation of the encapsulation layer. In particular, two or more auxiliary fibers can be disposed, and the auxiliary fibers are vertically or horizontally interlaced or intertwined in the encapsulation layer, and the auxiliary fibers form a pulling relationship with each other. The structure is stable and is more conducive to preventing deformation caused by the curing stress of the encapsulating material. For example, a metal material can be selected to make an auxiliary fiber.
附图说明DRAWINGS
图1为传统制作工艺的示意图一;Figure 1 is a schematic view 1 of a conventional manufacturing process;
图2为图1中A-A剖视图;Figure 2 is a cross-sectional view taken along line A-A of Figure 1;
图3为传统制作工艺的示意图二;Figure 3 is a schematic view 2 of a conventional manufacturing process;
图4为本发明实施例一芯片扇出方法的俯视图;4 is a top plan view of a chip fanout method according to an embodiment of the present invention;
图5为图4中B-B剖视图;Figure 5 is a cross-sectional view taken along line B-B of Figure 4;
图6为本发明实施例一芯片扇出方法的示意图一;6 is a first schematic diagram of a chip fanout method according to an embodiment of the present invention;
图7为本发明实施例一芯片扇出方法的示意图二;FIG. 7 is a second schematic diagram of a chip fanout method according to an embodiment of the present invention; FIG.
图8为本发明实施例一芯片扇出电路的示意图一;8 is a schematic diagram 1 of a chip fanout circuit according to an embodiment of the present invention;
图9为本发明实施例一芯片扇出电路的示意图二;FIG. 9 is a second schematic diagram of a chip fanout circuit according to an embodiment of the present invention; FIG.
图10为本发明实施例一芯片扇出电路的示意图三;10 is a schematic diagram 3 of a chip fanout circuit according to an embodiment of the present invention;
图11为本发明实施例一芯片扇出电路的示意图四;11 is a schematic diagram 4 of a chip fanout circuit according to an embodiment of the present invention;
图12为本发明实施例二芯片扇出电路的示意图一;12 is a first schematic diagram of a chip fanout circuit according to a second embodiment of the present invention;
图13为图12中C-C剖视图;Figure 13 is a cross-sectional view taken along line C-C of Figure 12;
图14为本发明实施例二芯片扇出电路的示意图二; 14 is a second schematic diagram of a chip fanout circuit according to an embodiment of the present invention;
图15为本发明实施例二芯片扇出电路的示意图三;15 is a third schematic diagram of a chip fanout circuit according to an embodiment of the present invention;
图16为本发明实施例二芯片扇出电路的示意图四;16 is a schematic diagram 4 of a chip-out circuit of a second embodiment of the present invention;
图17为本发明实施例二芯片扇出电路的示意图五;17 is a schematic diagram 5 of a chip fanout circuit according to an embodiment of the present invention;
图18为图17中D-D的剖视图;Figure 18 is a cross-sectional view taken along line D-D of Figure 17;
图19为本发明实施例三芯片扇出电路的示意图一;19 is a first schematic diagram of a three-chip fan-out circuit according to an embodiment of the present invention;
图20为图19中E-E的剖视图;Figure 20 is a cross-sectional view taken along line E-E of Figure 19;
图21本发明实施例三芯片扇出电路的示意图二;21 is a schematic diagram 2 of a three-chip fan-out circuit according to an embodiment of the present invention;
图22为本发明实施例三芯片扇出电路的示意图三;22 is a schematic diagram 3 of a three-chip fan-out circuit according to an embodiment of the present invention;
图23为本发明实施例三芯片扇出电路的示意图四。FIG. 23 is a schematic diagram 4 of a three-chip fan-out circuit according to an embodiment of the present invention.
附图标记说明:Description of the reference signs:
100、封装材料,101、封装颗粒,110、封装层,200、芯片,300、辅助网,310、辅助纤维,320、辅助颗粒,410、载板,420、媒介层。100, encapsulating material, 101, encapsulating particles, 110, encapsulating layer, 200, chip, 300, auxiliary net, 310, auxiliary fiber, 320, auxiliary particles, 410, carrier plate, 420, medium layer.
具体实施方式detailed description
下面对本发明作进一步详细说明,但本发明的实施方式不限于此。The present invention will be further described in detail below, but embodiments of the invention are not limited thereto.
实施例一Embodiment 1
在芯片200上设置封装层110将芯片200封装,如果不采用被实施例的方法,封装层110在降温固化的过程中,即使将封装材料100设置为规整的长方体,如图1、2所示,但是由于芯片200的热膨胀系数通常与封装层110的热膨胀系数不一致,芯片200和封装层110之间收缩比不一致、且热应力不均衡,封装层110应力方向如图3中F2所示,F2会使固化后的封装层110产生弯曲如图3所示。The package layer 110 is disposed on the chip 200 to encapsulate the chip 200. If the method of the embodiment is not employed, the package layer 110 is set to a regular rectangular parallelepiped during the temperature-cooling curing process, as shown in FIG. However, since the thermal expansion coefficient of the chip 200 is generally inconsistent with the thermal expansion coefficient of the encapsulation layer 110, the shrinkage ratio between the chip 200 and the encapsulation layer 110 is inconsistent, and the thermal stress is not balanced. The stress direction of the encapsulation layer 110 is as shown by F2 in FIG. 3, F2. The cured encapsulation layer 110 is bent as shown in FIG.
如图4、5所示,本实施例中,在载板410上设置媒介层420,在媒介层420上设置芯片200,并且在媒介层420上设置辅助网300,辅助网300设有窗口,芯片200至少部分伸入窗口,芯片200和辅助网300通过媒介层420抵靠在载板410上,在载板410的支撑下设置芯片200,芯片200的放置位置精准,可以设置一个芯片200或设置两个以上的芯片200,本实施例中设置两个以上 的芯片200,两个芯片200之间的相对位置也可以精准设置。如图6所示,在载板410上设置封装材料100,芯片200恰好全部嵌于封装材料100内并且芯片200的其中一个表面从封装层110表面裸露(但不限于本实施例,也可以是芯片200至少部分嵌设于封装材料100内),辅助网300恰好全部嵌于封装材料100内并且芯片200的其中一个表面从封装层110表面裸露(但不限于本实施例,也可以是辅助网300至少部分嵌设于封装材料100内)。如图7所示,将封装材料100固化成封装层110,封装层110将芯片200和辅助网300封装固定,并且两个芯片200之间的相对位置被封装层110固定了;固化后将载板410与芯片200或封装层110或辅助网300脱离。其中,当封装材料100固化时,就将芯片200相对于封装层110的位置固定了,封装材料100固化时过程中当封装材料100有变形趋势时,辅助网300和封装层110之间发生力的相互作用力,辅助网300缓解封装层110的热不均衡导致的应力,辅助层可以牵拉或者推挤封装材料100,避免封装材料100的热不均衡发生变形。如此,封装层110实现了芯片200封装,辅助网300在封装材料100固化为封装层110的过程中避免封装材料100和芯片200构成的整体发生弯曲。优选的,当封装材料100固化前是颗粒状或液态或可流动时,封装材料100可以进入辅助网300内,固化封装材料100的过程中当封装材料100有变形趋势时,增加辅助网300与封装材料100之间相互作用力,使辅助网300更好的缓解、均衡封装材料100的固化应力,避免封装层110弯曲或变形。As shown in FIG. 4 and FIG. 5, in this embodiment, a medium layer 420 is disposed on the carrier 410, a chip 200 is disposed on the medium layer 420, and an auxiliary net 300 is disposed on the medium layer 420, and the auxiliary net 300 is provided with a window. The chip 200 is at least partially protruded into the window, and the chip 200 and the auxiliary net 300 are abutted on the carrier 410 through the medium layer 420. The chip 200 is disposed under the support of the carrier 410. The chip 200 is placed accurately, and a chip 200 can be disposed. Two or more chips 200 are provided, and two or more are provided in this embodiment. The relative position between the two chips 200 and the chip 200 can also be accurately set. As shown in FIG. 6, the encapsulation material 100 is disposed on the carrier 410. The chip 200 is completely embedded in the encapsulation material 100 and one surface of the chip 200 is exposed from the surface of the encapsulation layer 110 (but is not limited to this embodiment, and may be The chip 200 is at least partially embedded in the encapsulation material 100. The auxiliary net 300 is completely embedded in the encapsulation material 100 and one surface of the chip 200 is exposed from the surface of the encapsulation layer 110 (but not limited to this embodiment, and may also be an auxiliary network). 300 is at least partially embedded in the encapsulating material 100). As shown in FIG. 7, the encapsulation material 100 is cured into an encapsulation layer 110, and the encapsulation layer 110 encapsulates the chip 200 and the auxiliary net 300, and the relative position between the two chips 200 is fixed by the encapsulation layer 110; The board 410 is detached from the chip 200 or the encapsulation layer 110 or the auxiliary net 300. Wherein, when the encapsulating material 100 is cured, the position of the chip 200 relative to the encapsulating layer 110 is fixed, and when the encapsulating material 100 has a tendency to deform during curing of the encapsulating material 100, a force is generated between the auxiliary net 300 and the encapsulating layer 110. The interaction force, the auxiliary net 300 mitigates the stress caused by the thermal imbalance of the encapsulation layer 110, and the auxiliary layer can pull or push the encapsulation material 100 to avoid deformation of the thermal imbalance of the encapsulation material 100. As such, the encapsulation layer 110 implements the chip 200 package, and the auxiliary net 300 avoids the overall bending of the encapsulation material 100 and the chip 200 during the process of curing the encapsulation material 100 into the encapsulation layer 110. Preferably, when the encapsulating material 100 is granular or liquid or flowable before curing, the encapsulating material 100 can enter the auxiliary net 300. During the process of curing the encapsulating material 100, when the encapsulating material 100 has a tendency to deform, the auxiliary net 300 is added. The interaction force between the encapsulating materials 100 enables the auxiliary net 300 to better alleviate and equalize the curing stress of the encapsulating material 100, and avoid bending or deformation of the encapsulating layer 110.
辅助网300在封装材料100固化为封装层110的过程中避免封装材料100和芯片200构成的整体发生弯曲,如图6至9所示,封装层110朝向载板410的一面为第一表面,与第一表面相对的一面为第二表面;靠近第一表面设置芯片200和辅助网300;辅助网300的热膨胀系数大于封装层110的热膨胀系数。如图9所示,当封装材料100降温固化时,由于芯片200的热膨胀系数小于封装材料100,封装层110的第二表面收缩大于第一表面的收缩,热应力使封装层110有如图9中F2所示的方向弯曲的趋势,而辅助网300的热膨胀系数大于封装材料100的热膨胀系数,降温固化时辅助网300的收缩大于封装层110的 收缩,辅助网300相当于按图9中F1的方向牵拉封装层110的第一表面,从而防止封装层110按照F2的方向弯曲,并且,辅助网300抵靠载板410,载板410为辅助网300提供支撑,让辅助网300本身不变形,另外通过选择封装层110的热膨胀系数和横截面积、辅助网300的热膨胀系数和横截面积,可以使封装层110固化时不变形、固化后与预设形状一致。The auxiliary net 300 prevents the entire structure of the encapsulating material 100 and the chip 200 from being bent during the curing of the encapsulating material 100 into the encapsulating layer 110. As shown in FIGS. 6 to 9, the one side of the encapsulating layer 110 facing the carrier plate 410 is the first surface. The side opposite to the first surface is a second surface; the chip 200 and the auxiliary net 300 are disposed adjacent to the first surface; the thermal expansion coefficient of the auxiliary net 300 is greater than the thermal expansion coefficient of the encapsulation layer 110. As shown in FIG. 9, when the encapsulating material 100 is cooled and cured, since the thermal expansion coefficient of the chip 200 is smaller than that of the encapsulating material 100, the second surface shrinkage of the encapsulating layer 110 is greater than the shrinkage of the first surface, and the thermal stress causes the encapsulating layer 110 to have a layer as shown in FIG. The direction of the direction shown by F2 is curved, and the coefficient of thermal expansion of the auxiliary net 300 is greater than the coefficient of thermal expansion of the encapsulating material 100, and the shrinkage of the auxiliary net 300 is greater than that of the encapsulating layer 110 when the temperature is solidified. Shrinking, the auxiliary net 300 is equivalent to pulling the first surface of the encapsulation layer 110 in the direction of F1 in FIG. 9, thereby preventing the encapsulation layer 110 from being bent in the direction of F2, and the auxiliary net 300 is abutted against the carrier 410, and the carrier 410 is The auxiliary net 300 provides support so that the auxiliary net 300 itself is not deformed. In addition, by selecting the thermal expansion coefficient and cross-sectional area of the encapsulating layer 110, the thermal expansion coefficient and the cross-sectional area of the auxiliary net 300, the encapsulating layer 110 can be cured without being deformed and solidified. It is consistent with the preset shape.
其中,辅助网300为金属、陶瓷、或塑料,封装材料100为模压成型材料。The auxiliary net 300 is made of metal, ceramic, or plastic, and the encapsulating material 100 is a molded material.
在封装层110固化后,在封装层110的第一表面制作连线,将连线与芯片200电连接,芯片200与芯片200相互之间也可以通过连线直接电连接;然后在封装层110的第一表面设置附加封装层110,附加封装层110和封装层110将芯片200、连线夹在中间固定、并提供保护。采用本实施例的方法制成的芯片200扇出电路,由于在载板410上设置芯片200,芯片200定位准确,在封装后再制作连线使连线和芯片200电连接,此时芯片200已被封装层110固定定位,在制作连线时,根据测量得到的芯片200的具体位置来设计连线的图案并制作连线,即使将连线的线宽和间距设计得很小,也可以使连线与芯片200精准连接,如上所述,可以制作线宽小于10微米、间距小于10微米的连线(传统的连线大于50微米并且很难再细小),提高连线的密度,增加芯片200的连接通道、提高芯片200数据传输数据。另一方面,设置辅助网300限制封装层110的变形,可以将封装层110做得很薄,封装层110、芯片200、辅助网300构成的整体可以具有柔性、可弯曲,但是不断裂,可以制成可穿戴设备。After the encapsulation layer 110 is cured, a connection is made on the first surface of the encapsulation layer 110, and the connection is electrically connected to the chip 200. The chip 200 and the chip 200 may be directly electrically connected to each other through a connection; and then in the encapsulation layer 110. The first surface is provided with an additional encapsulation layer 110, and the additional encapsulation layer 110 and the encapsulation layer 110 fix the chip 200, the wiring clip in the middle, and provide protection. The chip 200 is formed by the method of the embodiment. Since the chip 200 is disposed on the carrier 410, the chip 200 is positioned accurately. After the package is fabricated, the connection is made to electrically connect the connection and the chip 200. At this time, the chip 200 is electrically connected. The package layer 110 has been fixedly positioned, and when the connection is made, the pattern of the connection line is designed according to the measured specific position of the chip 200, and the connection is made, even if the line width and spacing of the connection are designed to be small, The connection is precisely connected to the chip 200. As described above, a line having a line width of less than 10 μm and a pitch of less than 10 μm can be fabricated (the conventional connection is larger than 50 μm and difficult to be fine), thereby increasing the density of the connection and increasing the density. The connection channel of the chip 200 increases the data transmission data of the chip 200. On the other hand, the auxiliary network 300 is provided to limit the deformation of the encapsulation layer 110, and the encapsulation layer 110 can be made thin. The whole of the encapsulation layer 110, the chip 200, and the auxiliary net 300 can be flexible and bendable, but can be broken. Made into a wearable device.
不限于本实施例,也可以如图10所示,靠近第一表面设置芯片200,靠近第二表面设置辅助网300。由于芯片200的热膨胀系数与封装材料100的热膨胀系数不一样,通常是芯片200的热膨胀系数小于封装材料100的热膨胀系数,所以靠近芯片200的第一表面更显得热不均衡,但是封装层110通常是片状的,可以通过在靠近第二表面设置辅助网300,限制第二表面的变形来限制第一表面的变形。例如,可以选择辅助网300的热膨胀系数小于封装层110的热膨胀系数,辅助网300靠近第二表面,芯片200的应力和辅助网300的应力在封装层110上是对称或近似对称的,避免封装层110变形。辅助网300的热膨胀系 数小于封装层110的热膨胀系数,在降温固化封装颗粒101的过程中,辅助网300的收缩量小于封装层110的收缩量,辅助网300抵抗封装层110的在第二表面的收缩,使封装层110不弯曲。但不限于此,还可以如图11所示,在靠近第一表面与第二表面中间的位置设置辅助网300。Not limited to this embodiment, as shown in FIG. 10, the chip 200 may be disposed adjacent to the first surface, and the auxiliary net 300 may be disposed adjacent to the second surface. Since the thermal expansion coefficient of the chip 200 is different from the thermal expansion coefficient of the encapsulation material 100, generally the thermal expansion coefficient of the chip 200 is smaller than the thermal expansion coefficient of the encapsulation material 100, so the first surface near the chip 200 is more thermally uneven, but the encapsulation layer 110 is usually It is sheet-like, and the deformation of the first surface can be restricted by providing the auxiliary net 300 near the second surface to restrict the deformation of the second surface. For example, the thermal expansion coefficient of the auxiliary net 300 may be selected to be smaller than the thermal expansion coefficient of the encapsulation layer 110, and the auxiliary net 300 is close to the second surface. The stress of the chip 200 and the stress of the auxiliary net 300 are symmetric or approximately symmetrical on the encapsulation layer 110, avoiding encapsulation. Layer 110 is deformed. Thermal expansion system of auxiliary net 300 The number is smaller than the thermal expansion coefficient of the encapsulation layer 110. During the process of cooling and curing the encapsulating particles 101, the shrinkage amount of the auxiliary net 300 is smaller than the shrinkage amount of the encapsulation layer 110, and the auxiliary net 300 resists shrinkage of the encapsulation layer 110 on the second surface, so that the package is made. Layer 110 is not bent. However, it is not limited thereto, and as shown in FIG. 11, the auxiliary net 300 may be disposed at a position close to the middle between the first surface and the second surface.
本实施例中通过选择辅助网300的热膨胀系数来缓解封装层110热变形,根据具体情况,设计封装层110的热膨胀系数,芯片200的热膨胀系数、以及安装的位置、辅助网300的热膨胀系数以及安装的位置,使得固化封装材料100的过程中,芯片200、辅助网300和封装材料100构成的整体热应力均衡。但是不限于本实施例,也可以选择辅助网300的杨氏模量大于封装层110的杨氏模量,辅助网300本身的抗弯性能很强,足以抗衡封装层110的热应力保证封装层110不发生变形,优选的,可以选择金属、陶瓷、或塑料来制作辅助网300。In this embodiment, the thermal expansion coefficient of the encapsulation layer 110 is alleviated by selecting the thermal expansion coefficient of the auxiliary net 300, and the thermal expansion coefficient of the encapsulation layer 110, the thermal expansion coefficient of the chip 200, the installed position, the thermal expansion coefficient of the auxiliary net 300, and The location of the mounting is such that during assembly of the encapsulating material 100, the overall thermal stresses of the chip 200, the auxiliary mesh 300, and the encapsulating material 100 are equalized. However, the present invention is not limited to this embodiment, and the Young's modulus of the auxiliary net 300 may be selected to be larger than the Young's modulus of the encapsulation layer 110. The auxiliary net 300 itself has strong bending resistance, and is sufficient to counter the thermal stress of the encapsulation layer 110 to ensure the encapsulation layer. The deformation does not occur at 110. Preferably, the auxiliary mesh 300 can be made of metal, ceramic, or plastic.
其中,可以选择载板410为玻璃材质或金属材质。玻璃和金属作为载板410具有很好地平整度,并且热变形小,有利于保持基电路层和芯片200之间的连接可靠。金属材质优选采用不锈钢,使不锈钢表面具有高平整度。可以是,媒介层420为光敏粘接介质,载板410为透光的玻璃材质,选择可透光的玻璃制作载板410,利用玻璃材质的透光性能,可以从载板410的一侧调节对光敏粘贴介质的光照,使载板410与芯片200、封装层110脱离;或者也可以是,媒介层420为热敏粘接介质,载板410为金属材质,从载板410的一侧对调节热敏粘贴介质的温度,使载板410与芯片200、封装层110脱离。金属的导热性良好,利于采用热敏粘接材料,并且金属强度高、不易磨损,例如可以采用不锈钢制作载板410,可以防止生锈。媒介层420为光敏粘贴介质或热敏粘贴介质时,将芯片200安放于媒介层420时时,媒介层420将芯片200粘贴固定于载板410,可以减少封装材料100固化时芯片200的相对位移和错位。但不限于本实施例,可以选择媒介层420将芯片200固定或不固定,媒介层420设有芯片200的卡位,芯片200卡放在媒介层420的卡位上,芯片200被卡位限制移动。也可以选择媒介层420本身是粘贴材料,媒介层420将芯片200粘贴 于载板410,限制在封装材料100固化过程中的位移。The carrier plate 410 can be selected from a glass material or a metal material. The glass and metal have a good flatness as the carrier 410, and the thermal deformation is small, which is advantageous in maintaining a reliable connection between the base circuit layer and the chip 200. The metal material is preferably made of stainless steel to provide a high degree of flatness on the stainless steel surface. The medium layer 420 may be a photosensitive adhesive medium, and the carrier plate 410 is made of a light-transmissive glass material. The light-transmissive glass is used to form the carrier plate 410. The light-transmitting property of the glass material can be adjusted from one side of the carrier plate 410. The light is applied to the photosensitive paste medium to disengage the carrier 410 from the chip 200 and the encapsulation layer 110. Alternatively, the dielectric layer 420 may be a heat sensitive adhesive medium, and the carrier 410 may be made of a metal material, from the side of the carrier 410. The temperature of the thermal paste medium is adjusted to disengage the carrier 410 from the chip 200 and the encapsulation layer 110. The metal has good thermal conductivity, is advantageous for using a heat-sensitive bonding material, and has high metal strength and is not easily worn. For example, the carrier plate 410 can be made of stainless steel to prevent rust. When the medium layer 420 is a photosensitive adhesive medium or a thermal paste medium, when the chip 200 is placed on the medium layer 420, the medium layer 420 adheres and fixes the chip 200 to the carrier 410, which can reduce the relative displacement of the chip 200 when the package material 100 is cured. dislocation. However, the present invention is not limited to the embodiment, and the medium layer 420 may be selected to fix or not fix the chip 200, the medium layer 420 is provided with the card position of the chip 200, the chip 200 is stuck on the card position of the medium layer 420, and the chip 200 is limited by the card position. mobile. It is also possible to select that the medium layer 420 itself is a pasting material, and the medium layer 420 pastes the chip 200 On the carrier plate 410, the displacement during the curing of the encapsulating material 100 is limited.
实施例二Embodiment 2
实施例二与实施例一的区别在于:The difference between the second embodiment and the first embodiment is:
如图12、13所示,设置辅助纤维310构成辅助网300,辅助网300设有窗口,芯片200至少部分伸入窗口。在载板410上设置芯片200和辅助网300时,使芯片200和辅助网300均抵靠载板410,然后再设置封装材料100,将封装材料100固化为封装层110,封装层110将芯片200和辅助纤维310固定。如图13所示,由辅助纤维310构成的辅助网300设置于靠近封装层110第一表面的位置,辅助纤维310的热膨胀系数大于封装层110的热膨胀系数,降温固化时辅助纤维310的收缩大于封装层110的收缩,辅助纤维310牵拉封装层110的第一表面,从而防止封装层110向第二表面卷曲。或者,如图14所示,由辅助纤维310构成的辅助网300设置于靠近第二表面的位置,辅助纤维310的热膨胀系数小于封装层110的热膨胀系数。由于芯片200的热膨胀系数与封装材料100的热膨胀系数不一样,通常是芯片200的热膨胀系数小于封装材料100的热膨胀系数,所以靠近芯片200的第一表面更显得热不均衡,但是封装层110通常是片状的,可以通过在靠近第二表面设置辅助纤维310,限制第二表面的变形来限制第一表面的变形。例如,可以选择辅助纤维310的热膨胀系数小于封装层110的热膨胀系数,辅助纤维310靠近第二表面,芯片200的应力和辅助纤维310的应力在封装层110上是对称或近似对称的,避免封装层110变形。辅助纤维310的热膨胀系数小于封装层110的热膨胀系数,在降温固化封装颗粒101的过程中,辅助纤维310的收缩量小于封装层110的收缩量,辅助纤维310抵抗封装层110的在第二表面的收缩,使封装层110不弯曲。不限于此,还可以如图15所示,在靠近第一表面与第二表面中间的位置设置辅助纤维310构成的辅助网300。通过选择辅助纤维310的热膨胀系数及位置、芯片200的热膨胀系数及位置、封装层110的热膨胀系数来使封装层110不发生变形。As shown in Figures 12 and 13, the auxiliary fibers 310 are arranged to form an auxiliary net 300. The auxiliary net 300 is provided with a window, and the chip 200 at least partially protrudes into the window. When the chip 200 and the auxiliary net 300 are disposed on the carrier 410, the chip 200 and the auxiliary net 300 are both abutted against the carrier 410, and then the encapsulation material 100 is disposed to cure the encapsulation material 100 into the encapsulation layer 110. 200 and auxiliary fiber 310 are fixed. As shown in FIG. 13, the auxiliary net 300 composed of the auxiliary fibers 310 is disposed near the first surface of the encapsulating layer 110, the thermal expansion coefficient of the auxiliary fibers 310 is larger than the thermal expansion coefficient of the encapsulating layer 110, and the shrinkage of the auxiliary fibers 310 is greater when the temperature is solidified. Upon shrinkage of the encapsulation layer 110, the auxiliary fibers 310 pull the first surface of the encapsulation layer 110 to prevent the encapsulation layer 110 from curling toward the second surface. Alternatively, as shown in FIG. 14, the auxiliary net 300 composed of the auxiliary fibers 310 is disposed at a position close to the second surface, and the thermal expansion coefficient of the auxiliary fibers 310 is smaller than the thermal expansion coefficient of the encapsulating layer 110. Since the thermal expansion coefficient of the chip 200 is different from the thermal expansion coefficient of the encapsulation material 100, generally the thermal expansion coefficient of the chip 200 is smaller than the thermal expansion coefficient of the encapsulation material 100, so the first surface near the chip 200 is more thermally uneven, but the encapsulation layer 110 is usually It is sheet-like, and the deformation of the first surface can be restricted by providing the auxiliary fiber 310 near the second surface to restrict the deformation of the second surface. For example, the coefficient of thermal expansion of the auxiliary fiber 310 may be selected to be smaller than the coefficient of thermal expansion of the encapsulation layer 110, the auxiliary fiber 310 is adjacent to the second surface, and the stress of the chip 200 and the stress of the auxiliary fiber 310 are symmetric or approximately symmetrical on the encapsulation layer 110, avoiding encapsulation. Layer 110 is deformed. The coefficient of thermal expansion of the auxiliary fiber 310 is smaller than the coefficient of thermal expansion of the encapsulating layer 110. In the process of cooling and curing the encapsulating particles 101, the shrinkage amount of the auxiliary fiber 310 is smaller than the shrinkage amount of the encapsulating layer 110, and the auxiliary fiber 310 resists the second surface of the encapsulating layer 110. The shrinkage causes the encapsulation layer 110 to not bend. Not limited to this, as shown in FIG. 15, the auxiliary net 300 composed of the auxiliary fibers 310 may be disposed at a position close to the middle between the first surface and the second surface. The encapsulation layer 110 is not deformed by selecting the thermal expansion coefficient and position of the auxiliary fiber 310, the thermal expansion coefficient and position of the chip 200, and the thermal expansion coefficient of the encapsulation layer 110.
不限于此,辅助纤维310可以设置于封装层110的任意位置,例如图17、 18所示。辅助纤维310纵横交错、相互纠缠,构成稳定的框架性结构,稳固封装层110的形状,避免封装层110变形,可以选择辅助纤维310的杨氏模量大于封装层110的杨氏模量,辅助纤维310纵横交错、相互纠缠,构成稳定的框架性结构,辅助纤维310本身的抗弯能力很强,即使封装层110热应力不均衡,辅助纤维310也能支撑封装层110使之不变形。Without limitation, the auxiliary fiber 310 may be disposed at any position of the encapsulation layer 110, for example, FIG. 18 is shown. The auxiliary fibers 310 are criss-crossed and entangled to form a stable frame structure, and the shape of the encapsulation layer 110 is stabilized to avoid deformation of the encapsulation layer 110. The Young's modulus of the auxiliary fibers 310 may be selected to be larger than the Young's modulus of the encapsulation layer 110. The fibers 310 are criss-crossed and entangled to form a stable frame structure, and the auxiliary fiber 310 itself has a strong bending resistance. Even if the thermal stress of the encapsulating layer 110 is unbalanced, the auxiliary fiber 310 can support the encapsulating layer 110 so as not to be deformed.
其中优选的,辅助纤维310为金属、陶瓷、或塑料,封装材料100为模压成型材料。Preferably, the auxiliary fiber 310 is metal, ceramic, or plastic, and the encapsulating material 100 is a molded material.
实施例三Embodiment 3
实施例三与实施例一的区别在于:The difference between the third embodiment and the first embodiment is:
如图19、20所示,设置辅助颗粒320构成辅助网300,辅助网300设有窗口,芯片200至少部分伸入窗口。在载板410上设置芯片200和辅助网300时,使芯片200和辅助网300均抵靠载板410,然后再设置封装颗粒101,将封装颗粒101固化为封装层110,封装层110将芯片200和辅助颗粒320和芯片200固定。如图20所示,由辅助颗粒320构成的辅助网300设置于靠近封装层110第一表面的位置,辅助颗粒320的热膨胀系数大于封装层110的热膨胀系数,降温固化时辅助颗粒320的收缩大于封装层110的收缩,抵消封装层110的收缩,从而防止封装层110向第二表面卷曲。或者,如图21所示,由辅助颗粒320构成的辅助网300设置于靠近第二表面的位置,辅助颗粒320的热膨胀系数小于封装层110的热膨胀系数。由于芯片200的热膨胀系数与封装材料100的热膨胀系数不一样,通常是芯片200的热膨胀系数小于封装材料100的热膨胀系数,所以靠近芯片200的第一表面更显得热不均衡,但是封装层110通常是片状的,可以通过在靠近第二表面设置辅助颗粒320,限制第二表面的变形来限制第一表面的变形。例如,可以选择辅助颗粒320的热膨胀系数小于封装层110的热膨胀系数,辅助颗粒320靠近第二表面,在降温固化封装颗粒101的过程中,辅助颗粒320的收缩量小于封装层110的收缩量,辅助颗粒320抵抗封装层110的在第二表面的收缩,使封装层110不弯曲。不限于此,还可以 如图22所示,在靠近第一表面与第二表面中间的位置设置辅助颗粒320构成的辅助网300;或者,如图23所示辅助颗粒320可以分布于封装层110的任意位置,通过选择辅助颗粒320的热膨胀系数及位置、芯片200的热膨胀系数及位置、封装层110的热膨胀系数来使封装层110不发生变形。As shown in Figures 19 and 20, the auxiliary particles 320 are arranged to form an auxiliary net 300. The auxiliary net 300 is provided with a window, and the chip 200 at least partially protrudes into the window. When the chip 200 and the auxiliary net 300 are disposed on the carrier 410, the chip 200 and the auxiliary net 300 are both abutted against the carrier 410, and then the package particles 101 are disposed to cure the package particles 101 into the package layer 110, and the package layer 110 will be the chip. 200 and the auxiliary particles 320 and the chip 200 are fixed. As shown in FIG. 20, the auxiliary net 300 composed of the auxiliary particles 320 is disposed near the first surface of the encapsulating layer 110, the thermal expansion coefficient of the auxiliary particles 320 is greater than the thermal expansion coefficient of the encapsulating layer 110, and the shrinkage of the auxiliary particles 320 is greater when the temperature is solidified. Shrinkage of the encapsulation layer 110 counteracts shrinkage of the encapsulation layer 110, thereby preventing the encapsulation layer 110 from curling toward the second surface. Alternatively, as shown in FIG. 21, the auxiliary net 300 composed of the auxiliary particles 320 is disposed at a position close to the second surface, and the thermal expansion coefficient of the auxiliary particles 320 is smaller than the thermal expansion coefficient of the encapsulating layer 110. Since the thermal expansion coefficient of the chip 200 is different from the thermal expansion coefficient of the encapsulation material 100, generally the thermal expansion coefficient of the chip 200 is smaller than the thermal expansion coefficient of the encapsulation material 100, so the first surface near the chip 200 is more thermally uneven, but the encapsulation layer 110 is usually It is sheet-like, and the deformation of the first surface can be restricted by providing the auxiliary particles 320 near the second surface to restrict the deformation of the second surface. For example, the thermal expansion coefficient of the auxiliary particles 320 may be selected to be smaller than the thermal expansion coefficient of the encapsulation layer 110, and the auxiliary particles 320 are close to the second surface. In the process of cooling and curing the encapsulating particles 101, the shrinkage amount of the auxiliary particles 320 is smaller than the shrinkage amount of the encapsulation layer 110. The auxiliary particles 320 resist shrinkage of the encapsulation layer 110 at the second surface such that the encapsulation layer 110 does not bend. Not limited to this, you can also As shown in FIG. 22, the auxiliary net 300 composed of the auxiliary particles 320 is disposed at a position intermediate the first surface and the second surface; or, as shown in FIG. 23, the auxiliary particles 320 may be distributed at any position of the encapsulating layer 110 by selecting The thermal expansion coefficient and position of the auxiliary particles 320, the thermal expansion coefficient and position of the chip 200, and the thermal expansion coefficient of the encapsulation layer 110 prevent the encapsulation layer 110 from being deformed.
其中优选的,辅助颗粒320为金属、陶瓷、或塑料,封装材料100为模压成型材料。Preferably, the auxiliary particles 320 are metal, ceramic, or plastic, and the encapsulating material 100 is a molded material.
本实施例的优异效果包括:The excellent effects of this embodiment include:
1、在载板410上设置芯片200,在载板410上设置封装材料100,封装材料100包括封装颗粒101和缓冲颗粒,缓冲颗粒的热膨胀系数大于或小于封装颗粒101的热膨胀系数;芯片200至少部分嵌设于封装材料100内,将封装颗粒101固化成封装层110,封装层110将芯片200和辅助网300封装固定;将载板410与芯片200或封装层110脱离。1. The chip 200 is disposed on the carrier 410, and the encapsulation material 100 is disposed on the carrier 410. The encapsulation material 100 includes the encapsulating particles 101 and the buffer particles. The thermal expansion coefficient of the buffer particles is greater than or less than the thermal expansion coefficient of the encapsulating particles 101; Partially embedded in the encapsulation material 100, the encapsulation particles 101 are cured into an encapsulation layer 110, and the encapsulation layer 110 encapsulates the chip 200 and the auxiliary net 300; the carrier plate 410 is detached from the chip 200 or the encapsulation layer 110.
在载板410的支撑下设置芯片200,芯片200的放置位置精准,可以设置一个芯片200或设置两个以上的芯片200,当设置两个以上的芯片200时,两个芯片200之间的相对位置也可以精准设置。芯片200至少部分嵌设于封装材料100内(包括芯片200完全嵌于封装材料100内,芯片200部分嵌于封装材料100内、另一部分露出封装材料100,芯片200恰好全部嵌于封装材料100内并且芯片200的其中一个表面从封装层110表面裸露),当封装颗粒101固化时,就将芯片200相对于封装层110的位置固定了,如果设置了两个以上的芯片200,那么两个芯片200之间的相对位置被封装层110固定了。缓冲颗粒至少部分嵌设于封装材料100内(包括缓冲颗粒完全嵌于封装材料100内,缓冲颗粒部分嵌于封装材料100内、另一部分露出封装材料100,缓冲颗粒恰好全部嵌于封装材料100内并且芯片200的其中一个表面从封装层110表面裸露),当封装颗粒101固化时,缓冲颗粒和封装颗粒101之间发生力的相互作用力,缓冲颗粒缓解封装层110的热不均衡导致的应力,避免封装材料100的热不均衡发生变形。缓冲颗粒的热膨胀系数大于或小于封装颗粒101的热膨胀系数,根据封装颗粒101的热膨胀系数选择合适的缓冲颗粒的热膨胀系数以及 设置的位置,使缓冲颗粒在固化过程中缓冲封装颗粒101的应力、缓冲颗粒的形变量和封装颗粒101的形变量相互抵消,避免封装材料100和芯片200构成的整体发生弯曲。The chip 200 is disposed under the support of the carrier board 410. The chip 200 is placed at a precise position, and one chip 200 or two or more chips 200 may be disposed. When two or more chips 200 are disposed, the relative relationship between the two chips 200 is The position can also be set precisely. The chip 200 is at least partially embedded in the encapsulation material 100 (including the chip 200 is completely embedded in the encapsulation material 100, the chip 200 is partially embedded in the encapsulation material 100, and the other portion is exposed to the encapsulation material 100. The chip 200 is completely embedded in the encapsulation material 100. And one surface of the chip 200 is exposed from the surface of the package layer 110. When the package particles 101 are cured, the position of the chip 200 relative to the package layer 110 is fixed. If more than two chips 200 are provided, then two chips The relative position between 200 is fixed by the encapsulation layer 110. The buffer particles are at least partially embedded in the encapsulation material 100 (including the buffer particles are completely embedded in the encapsulation material 100, the buffer particles are partially embedded in the encapsulation material 100, and the other portion is exposed to the encapsulation material 100, and the buffer particles are all embedded in the encapsulation material 100. And one surface of the chip 200 is exposed from the surface of the encapsulation layer 110. When the encapsulating particles 101 are cured, a force interaction force occurs between the buffer particles and the encapsulating particles 101, and the buffering particles alleviate the stress caused by the thermal imbalance of the encapsulating layer 110. To avoid deformation of the thermal imbalance of the encapsulating material 100. The coefficient of thermal expansion of the buffer particles is greater than or less than the coefficient of thermal expansion of the encapsulated particles 101, and the coefficient of thermal expansion of the appropriate buffer particles is selected according to the coefficient of thermal expansion of the encapsulated particles 101 and The position is set such that the stress of the buffering particles 101 during the curing process, the deformation amount of the buffer particles, and the deformation amount of the encapsulating particles 101 are canceled each other, and the entire composition of the encapsulating material 100 and the chip 200 is prevented from being bent.
2、设置至少两个缓冲颗粒,缓冲颗粒构成带有窗口的辅助网300,芯片200至少部分伸入窗口。辅助网300的作用与2中描述类似。2. At least two buffer particles are provided, the buffer particles forming a secondary mesh 300 with a window, the chip 200 extending at least partially into the window. The role of the auxiliary net 300 is similar to that described in 2.
3、封装层110朝向载板410的一面为第一表面,与第一表面相对的一面为第二表面,靠近第一表面设置芯片200,靠近第一表面设置缓冲颗粒,缓冲颗粒的热膨胀系数大于封装层110的热膨胀系数;通常芯片200的热膨胀系数小于封装颗粒101的热膨胀系数,芯片200的热应力和辅助纤维的热应力相互抵消,从而避免封装层110变形。3. The one side of the encapsulation layer 110 facing the carrier board 410 is a first surface, and the side opposite to the first surface is a second surface. The chip 200 is disposed adjacent to the first surface, and buffer particles are disposed adjacent to the first surface, and the thermal expansion coefficient of the buffer particles is greater than The thermal expansion coefficient of the encapsulation layer 110; generally, the thermal expansion coefficient of the chip 200 is smaller than the thermal expansion coefficient of the encapsulating particles 101, and the thermal stress of the chip 200 and the thermal stress of the auxiliary fibers cancel each other, thereby preventing the encapsulation layer 110 from being deformed.
或者,靠近第一表面设置芯片200,靠近第二表面设置辅助颗粒320,缓冲颗粒的热膨胀系数小于封装层110的热膨胀系数。通常芯片200的热膨胀系数小于封装颗粒101的热膨胀系数,芯片200的应力和缓冲颗粒的应力在封装层110上是对称或近似对称的、可以相互抵消,从而避免封装层110变形。Alternatively, the chip 200 is disposed adjacent to the first surface, and the auxiliary particles 320 are disposed adjacent to the second surface, and the coefficient of thermal expansion of the buffer particles is smaller than the coefficient of thermal expansion of the encapsulation layer 110. Generally, the thermal expansion coefficient of the chip 200 is smaller than the thermal expansion coefficient of the package particles 101, and the stress of the chip 200 and the stress of the buffer particles are symmetric or approximately symmetrical on the encapsulation layer 110, and can cancel each other, thereby avoiding deformation of the encapsulation layer 110.
4、封装层110的热膨胀系数、芯片200的热膨胀系数、以及缓冲颗粒的热膨胀系数使得固化封装材料100的过程中,芯片200、辅助网300和封装材料100构成的整体热应力均衡。选择芯片200、缓冲颗粒和封装颗粒101的热膨胀系数和所设置的位置,可以使封装层110、芯片200、辅助纤维的整体形变量相抵消、热应力相互均衡,避免变形。4. The thermal expansion coefficient of the encapsulation layer 110, the thermal expansion coefficient of the chip 200, and the thermal expansion coefficient of the buffer particles make the overall thermal stress of the chip 200, the auxiliary net 300, and the encapsulating material 100 equalized during the curing of the encapsulating material 100. By selecting the thermal expansion coefficient of the chip 200, the buffer particles and the encapsulating particles 101 and the set position, the integral shape variables of the encapsulation layer 110, the chip 200, and the auxiliary fibers can be offset, and the thermal stresses are balanced with each other to avoid deformation.
以上实施例的各技术特征可以进行任意的组合,为使描述简洁,未对上述实施例中的各个技术特征所有可能的组合都进行描述,然而,只要这些技术特征的组合不存在矛盾,都应当认为是本说明书记载的范围。 The technical features of the above embodiments may be arbitrarily combined. For the sake of brevity of description, all possible combinations of the technical features in the above embodiments are not described. However, as long as there is no contradiction in the combination of these technical features, It is considered to be the range described in this specification.
以上实施例仅表达了本发明的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。因此,本发明专利的保护范围应以所附权利要求为准。 The above embodiments are merely illustrative of several embodiments of the present invention, and the description thereof is more specific and detailed, but is not to be construed as limiting the scope of the invention. It should be noted that a number of variations and modifications may be made by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of the invention should be determined by the appended claims.

Claims (43)

  1. 一种芯片扇出方法,其特征在于,包括:A chip fanout method, comprising:
    在载板上设置芯片,并在载板上设置辅助网和封装材料;Providing a chip on the carrier board and setting an auxiliary net and a packaging material on the carrier board;
    所述芯片至少部分嵌于所述封装材料内,所述辅助网至少部分嵌于所述封装材料内,将所述封装材料固化成封装层,所述封装层将芯片和辅助网封装固定;The chip is at least partially embedded in the encapsulation material, the auxiliary net is at least partially embedded in the encapsulation material, and the encapsulation material is cured into an encapsulation layer, and the encapsulation layer fixes the chip and the auxiliary net package;
    将所述载板与所述芯片或所述封装层或/和所述辅助网脱离。The carrier is detached from the chip or the encapsulation layer or/and the auxiliary mesh.
  2. 根据权利要求1所述的芯片扇出方法,其特征在于,所述辅助网设有窗口,所述芯片至少部分伸入所述窗口。The chip fan-out method according to claim 1, wherein the auxiliary net is provided with a window, and the chip at least partially protrudes into the window.
  3. 根据权利要求2所述的芯片扇出方法,其特征在于,所述芯片和所述辅助网均抵靠所述载板。The chip fan-out method according to claim 2, wherein the chip and the auxiliary net both abut against the carrier.
  4. 根据权利要求1所述的芯片扇出方法,其特征在于,所述封装层朝向所述载板的一面为第一表面,与所述第一表面相对的一面为第二表面;The chip fan-out method according to claim 1, wherein a side of the encapsulation layer facing the carrier is a first surface, and a side opposite to the first surface is a second surface;
    靠近所述第一表面设置所述芯片和所述辅助网;或者,靠近所述第一表面设置所述芯片,靠近所述第二表面设置所述辅助网。The chip and the auxiliary net are disposed adjacent to the first surface; or the chip is disposed adjacent to the first surface, and the auxiliary net is disposed adjacent to the second surface.
  5. 根据权利要求4所述的芯片扇出方法,其特征在于,所述芯片靠近所述第一表面,所述辅助网靠近所述第一表面,所述辅助网的热膨胀系数大于所述封装层的热膨胀系数。The chip fan-out method according to claim 4, wherein the chip is close to the first surface, the auxiliary net is close to the first surface, and the thermal expansion coefficient of the auxiliary net is larger than that of the encapsulation layer Thermal expansion coefficient.
  6. 根据权利要求4所述的芯片扇出方法,其特征在于,所述芯片靠近所述第一表面,所述辅助网靠近所述第二表面,所述辅助网的热膨胀系数小于所述封装层的热膨胀系数。The chip fan-out method according to claim 4, wherein the chip is close to the first surface, the auxiliary net is close to the second surface, and the thermal expansion coefficient of the auxiliary net is smaller than that of the encapsulation layer Thermal expansion coefficient.
  7. 根据权利要求1所述的芯片扇出方法,其特征在于,所述辅助网的最大厚度大于所述芯片的最大厚度。The chip fan-out method according to claim 1, wherein a maximum thickness of the auxiliary net is greater than a maximum thickness of the chip.
  8. 根据权利要求1所述的芯片扇出方法,其特征在于,所述辅助网的厚度至少小于所述封装层的厚度100微米。The chip fan-out method according to claim 1, wherein the auxiliary mesh has a thickness at least less than 100 μm of the thickness of the encapsulation layer.
  9. 根据权利要求1所述的芯片扇出方法,其特征在于,所述封装层的总面积减去所述芯片所占面积后剩余的面积当中,所述辅助网占10%至90%。The chip fan-out method according to claim 1, wherein the auxiliary network accounts for 10% to 90% of the total area of the encapsulation layer minus the area occupied by the chip.
  10. 根据权利要求1至9任一项所述的芯片扇出方法,其特征在于,所述 封装层的热膨胀系数、所述芯片的热膨胀系数、以及所述辅助网的热膨胀系数使得固化所述封装材料的过程中,所述芯片、所述辅助网和所述封装材料构成的整体热应力均衡。The chip fanout method according to any one of claims 1 to 9, wherein The coefficient of thermal expansion of the encapsulation layer, the coefficient of thermal expansion of the chip, and the coefficient of thermal expansion of the auxiliary web such that the overall thermal stress balance of the chip, the auxiliary net, and the encapsulating material is balanced during curing of the encapsulating material .
  11. 根据权利要求1至9任一项所述的芯片扇出方法,其特征在于,所述辅助网为金属、陶瓷、或塑料。The chip fan-out method according to any one of claims 1 to 9, wherein the auxiliary net is metal, ceramic, or plastic.
  12. 根据权利要求1至9任一项所述的芯片扇出方法,其特征在于,所述封装材料为模压成型材料。The chip fan-out method according to any one of claims 1 to 9, wherein the encapsulating material is a press molding material.
  13. 根据权利要求1至9任一项所述的芯片扇出方法,其特征在于,所述辅助网的杨氏模量大于所述封装层的杨氏模量。The chip fan-out method according to any one of claims 1 to 9, wherein the Young's modulus of the auxiliary net is larger than the Young's modulus of the encapsulating layer.
  14. 一种芯片扇出电路,其特征在于,包括:A chip fanout circuit, comprising:
    芯片、由封装材料固化成的封装层、以及辅助网;a chip, an encapsulation layer formed by encapsulating the material, and an auxiliary net;
    其中,所述芯片至少部分嵌设于所述封装层内,所述辅助网至少部分嵌设于所述封装层内,所述封装层将所述芯片和所述辅助网封装固定,所述辅助网用于削减所述封装材料固化成所述封装层所产生的弯曲或变形。Wherein the chip is at least partially embedded in the encapsulation layer, the auxiliary net is at least partially embedded in the encapsulation layer, and the encapsulation layer fixes the chip and the auxiliary net package, the auxiliary The mesh is used to reduce the bending or deformation of the encapsulating material that is cured into the encapsulating layer.
  15. 根据权利要求14所述的芯片扇出电路,其特征在于,所述辅助网设有窗口,所述芯片至少部分伸入所述窗口。The chip fanout circuit of claim 14 wherein said auxiliary net is provided with a window, said chip extending at least partially into said window.
  16. 根据权利要求14所述的芯片扇出电路,其特征在于,所述封装层具有相对的第一表面以及第二表面;The chip fanout circuit according to claim 14, wherein the encapsulation layer has opposing first and second surfaces;
    所述芯片和所述辅助网靠近所述第一表面;或者,所述芯片靠近所述第一表面,所述辅助网靠近所述第二表面。The chip and the auxiliary net are adjacent to the first surface; or the chip is adjacent to the first surface, and the auxiliary net is adjacent to the second surface.
  17. 根据权利要求16所述的芯片扇出电路,其特征在于,所述芯片靠近所述第一表面,所述辅助网靠近所述第一表面,所述辅助网的热膨胀系数大于所述封装层的热膨胀系数。The chip fan-out circuit according to claim 16, wherein the chip is close to the first surface, the auxiliary net is close to the first surface, and the thermal expansion coefficient of the auxiliary net is larger than that of the encapsulation layer. Thermal expansion coefficient.
  18. 根据权利要求16所述的芯片扇出电路,其特征在于,所述芯片和所述辅助网均与所述第一表面平齐,并且所述芯片、所述辅助网、以及所述第一表面构成的平面平整。The chip fanout circuit according to claim 16, wherein said chip and said auxiliary net are both flush with said first surface, and said chip, said auxiliary net, and said first surface The plane of the formation is flat.
  19. 根据权利要求16所述的芯片扇出电路,其特征在于,所述芯片靠近 所述第一表面,所述辅助网靠近所述第二表面,所述辅助网的热膨胀系数小于所述封装层的热膨胀系数。A chip fanout circuit according to claim 16 wherein said chip is close The first surface, the auxiliary net is adjacent to the second surface, and the auxiliary network has a thermal expansion coefficient smaller than a thermal expansion coefficient of the encapsulation layer.
  20. 根据权利要求14至19任一项所述的芯片扇出电路,其特征在于,所述封装层的热膨胀系数、所述芯片的热膨胀系数、以及所述辅助网的热膨胀系数使得固化所述封装材料的过程中,所述芯片、所述辅助网和所述封装材料构成的整体热应力均衡。The chip fan-out circuit according to any one of claims 14 to 19, wherein a coefficient of thermal expansion of the encapsulation layer, a coefficient of thermal expansion of the chip, and a coefficient of thermal expansion of the auxiliary net are such that the encapsulating material is cured. The overall thermal stress of the chip, the auxiliary mesh, and the encapsulating material is balanced during the process.
  21. 根据权利要求14至19任一项所述的芯片扇出电路,其特征在于,所述辅助网为金属、陶瓷、或塑料。The chip fan-out circuit according to any one of claims 14 to 19, wherein the auxiliary net is metal, ceramic, or plastic.
  22. 根据权利要求14至19任一项所述的芯片扇出电路,其特征在于,所述封装材料为模压成型材料。The chip fan-out circuit according to any one of claims 14 to 19, wherein the encapsulating material is a press molding material.
  23. 根据权利要求14至19任一项所述的芯片扇出电路,其特征在于,所述辅助网的杨氏模量大于所述封装层的杨氏模量。The chip fan-out circuit according to any one of claims 14 to 19, wherein the Young's modulus of the auxiliary net is larger than the Young's modulus of the encapsulating layer.
  24. 一种芯片扇出方法,其特征在于,包括:A chip fanout method, comprising:
    在载板上设置芯片,并在载板上设置辅助纤维和封装材料;Providing a chip on the carrier board and arranging auxiliary fibers and packaging materials on the carrier board;
    所述芯片至少部分嵌于所述封装材料内,所述辅助纤维至少部分嵌于所述封装材料内,将所述封装材料固化成封装层,所述封装层将芯片和辅助纤维封装固定;The chip is at least partially embedded in the encapsulating material, the auxiliary fiber is at least partially embedded in the encapsulating material, and the encapsulating material is cured into an encapsulating layer, and the encapsulating layer fixes the chip and the auxiliary fiber package;
    将所述载板与所述芯片或所述封装层或所述辅助纤维脱离。The carrier is detached from the chip or the encapsulation layer or the auxiliary fibers.
  25. 根据权利要求24所述的芯片扇出方法,其特征在于,所述辅助纤维构成辅助网,所述辅助网设有窗口,所述芯片至少部分伸入所述窗口。The chip fan-out method according to claim 24, wherein the auxiliary fibers constitute an auxiliary net, the auxiliary net is provided with a window, and the chip at least partially protrudes into the window.
  26. 根据权利要求25所述的芯片扇出方法,其特征在于,所述芯片和所述辅助网均抵靠所述载板。The chip fan-out method according to claim 25, wherein said chip and said auxiliary net both abut against said carrier.
  27. [根据细则91更正 07.04.2017]
    根据权利要求24所述的芯片扇出方法,其特征在于,所述封装层朝向所述载板的一面为第一表面,与所述第一表面相对的一面为第二表面;
    靠近所述第一表面设置所述芯片和所述辅助纤维;或者,靠近所述第一表面设置所述芯片,靠近所述第二表面设置所述辅助纤维。
    [Correct according to Rule 91 07.04.2017]
    The chip fan-out method according to claim 24, wherein one side of the encapsulation layer facing the carrier is a first surface, and a side opposite to the first surface is a second surface;
    The chip and the auxiliary fiber are disposed adjacent to the first surface; or the chip is disposed adjacent to the first surface, and the auxiliary fiber is disposed adjacent to the second surface.
  28. 根据权利要求27所述的芯片扇出方法,其特征在于,所述芯片靠近 所述第一表面,所述辅助纤维靠近所述第一表面,所述辅助纤维的热膨胀系数大于所述封装层的热膨胀系数。The chip fanout method according to claim 27, wherein said chip is close to The first surface, the auxiliary fiber is adjacent to the first surface, and the auxiliary fiber has a thermal expansion coefficient greater than a thermal expansion coefficient of the encapsulation layer.
  29. 根据权利要求27所述的芯片扇出方法,其特征在于,所述芯片靠近所述第一表面,所述辅助纤维靠近所述第二表面,所述辅助纤维的热膨胀系数小于所述封装层的热膨胀系数。The chip fan-out method according to claim 27, wherein the chip is close to the first surface, the auxiliary fiber is close to the second surface, and the auxiliary fiber has a thermal expansion coefficient smaller than that of the encapsulation layer. Thermal expansion coefficient.
  30. 根据权利要求24至29任一项所述的芯片扇出方法,其特征在于,所述封装层的热膨胀系数、所述芯片的热膨胀系数、以及所述辅助纤维的热膨胀系数使得固化所述封装材料的过程中,所述芯片、所述辅助网和所述封装材料构成的整体热应力均衡。The chip fan-out method according to any one of claims 24 to 29, wherein a thermal expansion coefficient of the encapsulation layer, a thermal expansion coefficient of the chip, and a thermal expansion coefficient of the auxiliary fiber cause curing of the encapsulating material The overall thermal stress of the chip, the auxiliary mesh, and the encapsulating material is balanced during the process.
  31. 根据权利要求24至29任一项所述的芯片扇出方法,其特征在于,所述辅助纤维为金属、陶瓷、或塑料。The chip fan-out method according to any one of claims 24 to 29, wherein the auxiliary fiber is metal, ceramic, or plastic.
  32. 根据权利要求24至29任一项所述的芯片扇出方法,其特征在于,所述封装材料为模压成型材料。The chip fan-out method according to any one of claims 24 to 29, wherein the encapsulating material is a press molding material.
  33. 根据权利要求24至29任一项所述的芯片扇出方法,其特征在于,所述辅助纤维的杨氏模量大于所述封装层的杨氏模量。The chip fan-out method according to any one of claims 24 to 29, wherein a Young's modulus of the auxiliary fiber is larger than a Young's modulus of the encapsulating layer.
  34. 一种芯片扇出电路,其特征在于,包括:A chip fanout circuit, comprising:
    芯片、由封装材料固化成的封装层、以及辅助纤维;a chip, an encapsulation layer cured from an encapsulating material, and an auxiliary fiber;
    其中,所述芯片至少部分嵌设于所述封装层内,所述辅助纤维至少部分嵌设于所述封装层内,所述封装层将所述芯片和所述辅助纤维封装固定,所述辅助纤维用于削减所述封装材料固化成所述封装层所产生的弯曲或变形。Wherein the chip is at least partially embedded in the encapsulation layer, the auxiliary fiber is at least partially embedded in the encapsulation layer, and the encapsulation layer fixes the chip and the auxiliary fiber package, the auxiliary The fibers are used to reduce the bending or deformation of the encapsulating material that is cured into the encapsulating layer.
  35. 根据权利要求34所述的芯片扇出电路,其特征在于,所述辅助纤维构成辅助网,所述辅助网设有窗口,所述芯片至少部分伸入所述窗口。A chip fanout circuit according to claim 34, wherein said auxiliary fibers constitute an auxiliary net, said auxiliary net being provided with a window, said chip extending at least partially into said window.
  36. 根据权利要求34所述的芯片扇出电路,其特征在于,所述封装层具有相对的第一表面以及第二表面;The chip fanout circuit of claim 34, wherein the encapsulation layer has opposing first and second surfaces;
    所述芯片和所述辅助纤维靠近所述第一表面;或者,所述芯片靠近所述第一表面,所述辅助纤维靠近所述第二表面。The chip and the auxiliary fiber are adjacent to the first surface; or the chip is adjacent to the first surface, and the auxiliary fiber is adjacent to the second surface.
  37. 根据权利要求36所述的芯片扇出电路,其特征在于,所述芯片靠近 所述第一表面,所述辅助网靠近所述第一表面,所述辅助网的热膨胀系数大于所述封装层的热膨胀系数。A chip fanout circuit according to claim 36, wherein said chip is close The first surface, the auxiliary net is adjacent to the first surface, and the auxiliary network has a thermal expansion coefficient greater than a thermal expansion coefficient of the encapsulation layer.
  38. 根据权利要求36所述的芯片扇出电路,其特征在于,所述芯片和所述辅助网均与所述第一表面平齐,并且所述芯片、所述辅助网、以及所述第一表面构成的平面平整。A chip fanout circuit according to claim 36, wherein said chip and said auxiliary net are both flush with said first surface, and said chip, said auxiliary net, and said first surface The plane of the formation is flat.
  39. 根据权利要求36所述的芯片扇出电路,其特征在于,所述芯片靠近所述第一表面,所述辅助网靠近所述第二表面,所述辅助网的热膨胀系数小于所述封装层的热膨胀系数。The chip fan-out circuit according to claim 36, wherein the chip is adjacent to the first surface, the auxiliary net is adjacent to the second surface, and the thermal expansion coefficient of the auxiliary net is smaller than that of the encapsulation layer Thermal expansion coefficient.
  40. 根据权利要求34至39任一项所述的芯片扇出电路,其特征在于,所述封装层的热膨胀系数、所述芯片的热膨胀系数、以及所述辅助纤维的热膨胀系数使得固化所述封装材料的过程中,所述芯片、所述辅助纤维和所述封装材料构成的整体热应力趋于均衡。The chip fan-out circuit according to any one of claims 34 to 39, wherein a coefficient of thermal expansion of the encapsulation layer, a coefficient of thermal expansion of the chip, and a coefficient of thermal expansion of the auxiliary fiber cause curing of the encapsulating material During the process, the overall thermal stress of the chip, the auxiliary fiber and the encapsulating material tends to be equalized.
  41. 根据权利要求34至39任一项所述的芯片扇出电路,其特征在于,所述辅助纤维为金属、陶瓷、或塑料。A chip fan-out circuit according to any one of claims 34 to 39, wherein the auxiliary fiber is metal, ceramic, or plastic.
  42. 根据权利要求34至39任一项所述的芯片扇出电路,其特征在于,所述封装材料为模压成型材料。The chip fan-out circuit according to any one of claims 34 to 39, wherein the encapsulating material is a press molding material.
  43. 根据权利要求34至39任一项所述的芯片扇出电路,其特征在于,所述辅助纤维的杨氏模量大于所述封装层的杨氏模量。 The chip fan-out circuit according to any one of claims 34 to 39, wherein the auxiliary fiber has a Young's modulus greater than a Young's modulus of the encapsulation layer.
PCT/CN2017/076432 2017-03-13 2017-03-13 Chip fanning out circuit and method WO2018165816A1 (en)

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Citations (4)

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Publication number Priority date Publication date Assignee Title
CN101061577A (en) * 2002-10-24 2007-10-24 英特尔公司 Flip-chip system and method of making same
CN101097904A (en) * 2006-06-27 2008-01-02 力成科技股份有限公司 Packaging structure for reducing warping
CN102915985A (en) * 2012-10-09 2013-02-06 天津大学 Double-sided adhering structure of power electronic device and production method of double-sided adhering structure
CN203839349U (en) * 2014-04-29 2014-09-17 佛山市顺德区顺达电脑厂有限公司 Reworking auxiliary tool

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101061577A (en) * 2002-10-24 2007-10-24 英特尔公司 Flip-chip system and method of making same
CN101097904A (en) * 2006-06-27 2008-01-02 力成科技股份有限公司 Packaging structure for reducing warping
CN102915985A (en) * 2012-10-09 2013-02-06 天津大学 Double-sided adhering structure of power electronic device and production method of double-sided adhering structure
CN203839349U (en) * 2014-04-29 2014-09-17 佛山市顺德区顺达电脑厂有限公司 Reworking auxiliary tool

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