WO2018157822A1 - Cellule solaire à double face perc de type p, ensemble avec celle-ci, système avec celle-ci et procédé de préparation - Google Patents

Cellule solaire à double face perc de type p, ensemble avec celle-ci, système avec celle-ci et procédé de préparation Download PDF

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Publication number
WO2018157822A1
WO2018157822A1 PCT/CN2018/077589 CN2018077589W WO2018157822A1 WO 2018157822 A1 WO2018157822 A1 WO 2018157822A1 CN 2018077589 W CN2018077589 W CN 2018077589W WO 2018157822 A1 WO2018157822 A1 WO 2018157822A1
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Prior art keywords
laser grooving
solar cell
laser
silicon wafer
type
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PCT/CN2018/077589
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English (en)
Chinese (zh)
Inventor
林纲正
方结彬
陈刚
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广东爱旭科技股份有限公司
浙江爱旭太阳能科技有限公司
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Publication of WO2018157822A1 publication Critical patent/WO2018157822A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to the field of solar cells, and more particularly to a P-type PERC double-sided solar cell, and a method for preparing the P-type PERC double-sided solar cell.
  • the solar cell module using the P-type PERC double-sided solar cell adopts the above-mentioned P-type Solar system for PERC double-sided solar cells.
  • a crystalline silicon solar cell is a device that effectively absorbs solar radiation energy and converts light energy into electrical energy by using a photovoltaic effect.
  • a new hole-electron pair is formed, and the electric field at the PN junction Under the action, the holes flow from the N zone to the P zone, and the electrons flow from the P zone to the N zone, and a current is formed after the circuit is turned on.
  • Conventional crystalline silicon solar cells basically use only front passivation technology, depositing a layer of silicon nitride on the front side of the silicon wafer by PECVD to reduce the recombination rate of the minority on the front surface, which can greatly increase the open circuit voltage and short circuit of the crystalline silicon battery. Current, thereby increasing the photoelectric conversion efficiency of the crystalline silicon solar cell. However, since the back side of the silicon wafer is not passivated, the improvement in photoelectric conversion efficiency is still limited.
  • the substrate adopts an N-type silicon wafer.
  • the carriers generated in the N-type silicon wafer pass through the silicon wafer having a thickness of about 200 ⁇ m, due to the N-type.
  • the silicon wafer has a low lifetime and low carrier recombination rate, and some carriers can reach the front pn junction; the front side of the solar cell is the main light-receiving surface, and its conversion efficiency accounts for a high proportion of the entire battery conversion efficiency; The effect is to greatly improve the conversion efficiency of the battery.
  • the price of N-type silicon wafer is high, and the process of N-type double-sided battery is complicated; therefore, how to develop high-efficiency and low-cost double-sided solar cells has become a hot spot for enterprises and researchers.
  • the industry has been studying the PERC back passivation solar cell technology.
  • the mainstream manufacturers in the industry mainly develop single-sided PERC solar cells.
  • the present invention combines PERC high-efficiency batteries and double-sided batteries to develop a PERC double-sided solar cell with higher integrated photoelectric conversion efficiency.
  • the present invention aims to propose a P-type PERC double-sided solar cell with simple process, low cost, easy promotion, and high photoelectric conversion efficiency.
  • the technical problem to be solved by the present invention is to provide a P-type PERC double-sided solar cell with simple structure, low cost, easy promotion, and high photoelectric conversion efficiency.
  • the technical problem to be solved by the present invention is also to provide a preparation method of a P-type PERC double-sided solar cell, which has the advantages of simple process, low cost, easy promotion, and high photoelectric conversion efficiency.
  • the technical problem to be solved by the present invention is also to provide a P-type PERC double-sided solar cell module, which has a simple structure, low cost, easy promotion, and high photoelectric conversion efficiency.
  • the technical problem to be solved by the present invention is also to provide a P-type PERC double-sided solar energy system with simple structure, low cost, easy promotion, and high photoelectric conversion efficiency.
  • the present invention provides a P-type PERC double-sided solar cell, which in turn comprises a back silver electrode, a back aluminum gate line, a back passivation layer, a P-type silicon, an N-type emitter, a front silicon nitride film. And the positive silver electrode, the back silver electrode and the back aluminum grid line intersect at a first predetermined angle, 10° ⁇ the first preset angle ⁇ 90°;
  • the laser grooving zone comprises a plurality of sets of laser grooving units, each set of laser grooving units comprising one or more laser grooving bodies, the back aluminum grid lines intersecting the laser grooving body at a second predetermined angle , 10 ° ⁇ second preset angle ⁇ 90 °.
  • the back silver electrode and the back aluminum grid line intersect at a first predetermined angle, 10° ⁇ the first preset angle ⁇ 90°;
  • the back aluminum grid line and the laser slotted body intersect at a second predetermined angle, and the second predetermined angle is 90°.
  • the laser grooving body is linear
  • the laser grooving units are arranged in parallel;
  • each laser grooving unit the laser grooving bodies are arranged side by side, and the laser grooving bodies are on the same plane or are staggered up and down.
  • the distance between the laser grooving units is 0.5-50 mm.
  • the spacing between the laser grooving bodies is 0.5-50 mm.
  • the laser grooving body has a length of 50 to 5000 microns and a width of 10 to 500 microns.
  • the number of the back aluminum grid lines is 30-500;
  • the width of the back aluminum grid line is 30-500 microns, and the width of the back aluminum grid line is smaller than the length of the laser slotted body.
  • the back passivation layer comprises an aluminum oxide layer and a silicon nitride layer, the aluminum oxide layer is connected to the P-type silicon, and the silicon nitride layer is connected to the aluminum oxide layer;
  • the thickness of the silicon nitride layer is 20-500 nm
  • the aluminum oxide layer has a thickness of 2 to 50 nm.
  • the present invention also discloses a method for preparing a P-type PERC double-sided solar cell, comprising:
  • laser grooving the back side of the silicon wafer to form a laser grooving area comprising a plurality of sets of laser grooving units, each set of laser grooving units comprising one or more laser grooving bodies;
  • the method further includes:
  • the laser grooving body is linear
  • the laser grooving units are arranged in parallel;
  • each laser grooving unit the laser grooving bodies are arranged side by side, and the laser grooving bodies are on the same plane or are staggered up and down;
  • the spacing between the laser grooving units is 0.5-50 mm.
  • the spacing between the laser grooving bodies is 0.5-50 mm.
  • the laser grooving body has a length of 50-5000 microns and a width of 10-500 microns;
  • the number of the back aluminum grid lines is 30-500;
  • the width of the back aluminum grid line is 30-500 microns, and the width of the back aluminum grid line is smaller than the length of the laser slotted body.
  • the present invention also discloses a PERC solar cell module comprising a PERC solar cell and a packaging material, and the PERC solar cell is any of the P-type PERC double-sided solar cells described above.
  • the present invention also discloses a PERC solar energy system comprising a PERC solar cell, which is any of the P-type PERC double-sided solar cells described above.
  • the laser grooved region is formed by laser grooving on the back passivation layer, and then the aluminum paste is printed in an angle or perpendicular direction to the laser scribing direction to make the aluminum paste.
  • the back aluminum gate line is obtained by connecting the P-type silicon through the grooved area.
  • the back silver electrode and the back aluminum grid line intersect at a first predetermined angle, and 10° ⁇ the first preset angle ⁇ 90° can improve the ability of the back silver electrode and the back aluminum grid to collect electrons, thereby improving the photoelectric conversion efficiency.
  • the back aluminum grid line and the laser slotted body intersect at a second predetermined angle, 10[the second predetermined angle ⁇ 90°.
  • the method is different from the conventional printing aluminum paste. Since the width of the aluminum grid is much smaller than the length of the laser grooved area, the aluminum paste and the laser grooved area can be eliminated. Alignment simplifies the laser process and printing process, reduces the difficulty of debugging of printing equipment, and is easy to industrialize and produce. In addition, the laser grooved area outside the aluminum paste coverage area can increase the absorption of sunlight by the back surface of the battery and improve the photoelectric conversion efficiency of the battery.
  • the invention has the advantages of simple structure, simple process, low cost, easy promotion, and high photoelectric conversion efficiency.
  • Figure 1 is a cross-sectional view showing a P-type PERC double-sided solar cell of the present invention
  • FIG. 2 is a schematic view showing a first embodiment of a back structure of a P-type PERC double-sided solar cell according to the present invention
  • FIG. 3 is a schematic view showing a second embodiment of a back structure of a P-type PERC double-sided solar cell according to the present invention.
  • FIG. 4 is a schematic view showing an embodiment of a laser grooving zone of a P-type PERC double-sided solar cell according to the present invention.
  • Figure 5 is a schematic illustration of another embodiment of a laser grooving zone of a P-type PERC double-sided solar cell of the present invention.
  • the existing single-sided solar cell has an all-aluminum back electric field on the back surface of the battery covering the entire back surface of the silicon wafer.
  • the function of the all-aluminum back electric field is to increase the open circuit voltage Voc and the short-circuit current Jsc, forcing the minority carriers away from the surface. The minority carrier recombination rate is reduced, thereby improving battery efficiency as a whole.
  • the all-aluminum back electric field is opaque, the back side of the solar cell having an all-aluminum back electric field cannot absorb light energy, and only the front side can absorb light energy, and the integrated photoelectric conversion efficiency of the battery is difficult to be greatly improved.
  • the present invention provides a P-type PERC double-sided solar cell, which in turn includes a back silver electrode 1, a back aluminum gate line 2, a back passivation layer 3, a P-type silicon 4, and an N-type emitter. 5.
  • the positive silver electrode 7 includes a positive silver electrode main gate 7A and a positive silver electrode sub-gate 7B.
  • the back passivation layer 3 includes an aluminum oxide layer 31 and a silicon nitride layer 32.
  • the invention improves the existing single-sided PERC solar cell, no longer has an all-aluminum back electric field, but turns it into a plurality of back aluminum grid lines 2, which are opened on the back passivation layer 3 by laser grooving technology.
  • the laser grooving area 8 is printed on the parallel-arranged laser grooving area 8 so as to be in local contact with the P-type silicon 4, and the densely-arranged back aluminum grid line 2 can not only serve Increasing the open circuit voltage Voc and the short circuit current Jsc, reducing the minority carrier recombination rate, improving the photoelectric conversion efficiency of the battery, can replace the all-aluminum back electric field of the existing single-sided battery structure, and the back aluminum grid line 2 does not completely cover the silicon On the back side of the film, sunlight can be projected from the back aluminum grid line 2 into the silicon wafer, thereby realizing absorption of light energy on the back side of the silicon wafer and greatly improving the photoelectric conversion efficiency of the battery.
  • the back silver electrode and the back aluminum grid line intersect at a first preset angle, and 10° ⁇ the first preset angle ⁇ 90° can improve the back silver electrode and the back aluminum grid line to collect electrons.
  • the ability to improve photoelectric conversion efficiency Preferably, 10° ⁇ the first predetermined angle ⁇ 90°.
  • the laser grooving area 8 includes a plurality of sets of laser grooving units 81.
  • Each set of laser grooving units 81 includes one or more laser grooving bodies 82, and the back aluminum grid lines and the laser slatted body are second. Set the angle of intersection, 10 ° ⁇ second preset angle ⁇ 90 °.
  • the back aluminum grid line intersects the laser slotted body perpendicularly, and the second predetermined angle is 90°.
  • FIG. 2 the back silver electrode and the back aluminum grid line are obliquely intersected, and the back aluminum grid line and the laser slotted body are also obliquely intersected; It is shown that the back silver electrode and the back aluminum grid line are obliquely intersected, and the back aluminum grid line intersects perpendicularly with the laser slotted body.
  • Figure 3 is a more preferred embodiment.
  • the laser grooving unit disposed in the horizontal direction is taken as an example, and the present invention is further illustrated in conjunction with FIGS. 4 and 5.
  • the dashed frame shown in FIGS. 4 and 5 is a laser grooving unit 81, and each group of laser grooving units 81 includes One or more laser grooving bodies 82.
  • the laser grooving unit 81 has various embodiments, including:
  • Each group of laser grooving units 81 includes a laser grooving body 82. At this time, the laser grooving unit 81 is a continuous linear grooving area, as shown in FIG. A plurality of laser grooving units 81 are arranged in the vertical direction.
  • Each group of laser grooving units 81 includes a plurality of laser grooving bodies 82.
  • the laser grooving unit 81 is a line segment type non-continuous linear grooving area, as shown in FIG.
  • the plurality of laser grooving bodies 82 may be two, three, four or more, but are not limited thereto.
  • a plurality of laser grooving units 81 are arranged in the vertical direction.
  • each group of laser grooving units 81 includes a plurality of laser grooving bodies 82, it is divided into the following cases:
  • the width, length and shape of the plurality of laser grooving bodies 82 are the same, and the size thereof is in the order of micrometers, and the length may be 50-5000 micrometers, but is not limited thereto; it should be noted that the laser grooving The bodies can be on the same plane, or they can be staggered up and down (that is, not in the same plane), and the staggered distribution of the topography depends on the production needs.
  • the width, length and shape of the plurality of laser grooving bodies 82 are the same, and the dimensions thereof are in the order of millimeters, and the length may be 5-600 mm, but is not limited thereto; it should be noted that the laser grooving The bodies can be on the same plane, or they can be staggered up and down (that is, not in the same plane), and the staggered distribution of the topography depends on the production needs.
  • the plurality of laser grooving bodies 82 have different widths, lengths, and/or shapes, and can be combined in accordance with production needs. It should be noted that the laser grooving bodies may be on the same plane, or may be staggered up and down (ie, not in the same plane), and the staggered distribution of the topography depends on production needs.
  • the laser slotted body is linear, which facilitates processing, simplifies the process, and reduces production costs.
  • the laser grooving body may also be provided in other shapes, such as curved, curved, wavy, etc., and embodiments thereof are not limited to the embodiments of the present invention.
  • the laser grooving units are arranged in parallel.
  • the laser grooving bodies are arranged side by side, which can simplify the production process and is suitable for large-scale popularization and application.
  • the spacing between the laser grooving units is 0.5-50 mm. In each laser grooving unit, the spacing between the laser grooving bodies is 0.5-50 mm.
  • the laser slotted body 82 has a length of 50-5000 microns and a width of 10-500 microns.
  • the laser grooving body 82 has a length of 250-1200 microns and a width of 30-80 microns.
  • the length, width and spacing of the laser grooving unit and the number and width of the aluminum grid are optimized based on the comprehensive consideration of the contact area of the aluminum grid and the P-type silicon, the opaque area of the aluminum grid, and the full collection of electrons. It is to reduce the shading area of the back aluminum grid as much as possible, while ensuring a good current output, thereby improving the overall photoelectric conversion efficiency of the battery.
  • the number of the back aluminum gate lines is 30-500, the width of the back aluminum grid lines is 30-500 microns, and the width of the back aluminum grid lines is much smaller than the length of the laser slotted body.
  • the number of the back aluminum grid lines is 80-220, and the width of the back aluminum grid lines is 50-300 microns.
  • the width of the back aluminum grid line is much smaller than the length of the laser slotted body. In the case where the aluminum grid is perpendicular to the laser slotted body, the printing problem of the back aluminum grid line can be greatly facilitated. Without precise alignment, the aluminum grid can be placed in the laser slotted area, which simplifies the laser process and printing process, reduces the difficulty of debugging the printing equipment, and is easy to industrialize and produce.
  • the present invention forms a laser grooving zone by laser grooving the back passivation layer, and then printing the aluminum paste in an angle or perpendicular to the direction of the laser scribing, so that the aluminum paste passes through the grooving zone and the P-type silicon. Connected to get the back aluminum grid.
  • the PERC double-sided solar cell adopts a battery grid structure on the front and back sides of the silicon wafer, and adopts a method different from the conventional printing aluminum paste, so that precise alignment of the aluminum paste and the laser grooved area is not required, and the process is simple and easy to be industrialized. Large production.
  • the aluminum grid is parallel to the laser slotted body.
  • the aluminum paste and the laser slotted area need to be accurately aligned.
  • the precision and repeatability of the printing equipment are very high, the yield is difficult to control, and the defective products are more, resulting in an average photoelectric conversion efficiency. Decline. With the present invention, the yield can be increased to 99.5%.
  • the back passivation layer 3 includes an aluminum oxide layer 31 and a silicon nitride layer 32, the aluminum oxide layer 31 is connected to the P-type silicon 4, and the silicon nitride layer 32 is connected to the aluminum oxide layer 31;
  • the silicon nitride layer 32 has a thickness of 20-500 nm
  • the aluminum oxide layer 31 has a thickness of 2 to 50 nm.
  • the silicon nitride layer 32 has a thickness of 100-200 nm;
  • the aluminum oxide layer 31 has a thickness of 5 to 30 nm.
  • the present invention also discloses a method for preparing a P-type PERC double-sided solar cell, comprising:
  • the laser grooving area comprising a plurality of sets of laser grooving units, each set of laser grooving units comprising one or more laser grooving bodies;
  • S106 and S104, S105 can be interchanged, and S106 can be before S104 and S105.
  • the method further comprises: polishing the back surface of the silicon wafer.
  • the present invention may be provided with a backside polishing step or no backside polishing step.
  • the present invention also discloses a PERC solar cell module comprising a PERC solar cell and a packaging material, and the PERC solar cell is any of the P-type PERC double-sided solar cells described above.
  • the PERC solar cell module the high-permeability tempered glass, the ethylene-vinyl acetate copolymer EVA, the PERC solar cell, the ethylene-vinyl acetate copolymer EVA, and the highly permeable tempered glass are sequentially connected from top to bottom. composition.
  • the present invention also discloses a PERC solar energy system comprising a PERC solar cell, which is any of the P-type PERC double-sided solar cells described above.
  • a PERC solar cell As a preferred embodiment of the PERC solar system, a PERC solar cell, a battery pack, a charge and discharge controller inverter, an AC power distribution cabinet, and a solar tracking control system are included.
  • the PERC solar system may be provided with a battery pack, a charge and discharge controller inverter, or a battery pack or a charge and discharge controller inverter, and those skilled in the art may set according to actual needs.
  • the laser grooving zone comprising a plurality of sets of laser grooving units arranged horizontally, each set of laser grooving units comprising a horizontally arranged laser opening a groove body, the laser grooved body having a length of 1000 microns and a width of 40 microns;
  • the silicon wafer is sintered at a high temperature to form a back silver electrode and a positive silver electrode.
  • the laser grooving zone comprising a plurality of sets of obliquely arranged laser grooving units, each set of laser grooving units comprising a plurality of obliquely arranged laser grooving Body, the laser slotted body has a length of 500 microns and a width of 50 microns;
  • the silicon wafer is sintered at a high temperature to form a back silver electrode and a positive silver electrode.
  • laser grooving the back side of the silicon wafer to form a laser grooving area comprising a plurality of sets of obliquely arranged laser grooving units, each set of laser grooving units comprising one or more oblique direction settings a laser grooving body having a length of 300 micrometers and a width of 30 micrometers;
  • the silicon wafer is sintered at a high temperature to form a back silver electrode and a positive silver electrode.
  • the laser grooving area comprising a plurality of sets of obliquely arranged laser grooving units, each set of laser grooving units comprising one or more inclined lasers a slotted body, the laser slotted body having a length of 1200 microns and a width of 200 microns;
  • the silicon wafer is sintered at a high temperature to form a back silver electrode and a positive silver electrode.

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Abstract

L'invention concerne une cellule solaire à double face PERC de type P comprenant des électrodes en argent arrière (1), des lignes de grille arrière en aluminium (2), une couche de passivation arrière (3), du silicium de type P (4), un émetteur de type N (5), un film de nitrure de silicium avant (6) et une électrode en argent avant (7), dans la séquence indiquée. Les électrodes en argent arrière et les lignes de grille en aluminium arrière se croisent à un premier angle prédéfini, avec 10° < le premier angle prédéfini < 90°. Une zone de rainurage au laser (8) est formée sur la couche de passivation arrière au moyen d'un rainurage au laser. Les lignes de grille en aluminium arrière sont reliées au silicium de type P au moyen de la zone de rainurage au laser. La zone de rainurage au laser comprend de multiples groupes d'unités de rainurage laser (81). Chaque groupe d'unités de rainurage au laser comprend un ou plusieurs corps de rainurage au laser (82). Les lignes de grille en aluminium arrière et les corps de rainurage au laser se croisent à un deuxième angle prédéfini, avec 10° < le deuxième angle prédéfini ≤ 90°. La cellule solaire présente une structure simple, des coûts faibles, elle est facile à généraliser et présente un rendement de conversion photoélectrique élevé.
PCT/CN2018/077589 2017-03-03 2018-02-28 Cellule solaire à double face perc de type p, ensemble avec celle-ci, système avec celle-ci et procédé de préparation WO2018157822A1 (fr)

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Application Number Priority Date Filing Date Title
CN201710122417.9 2017-03-03
CN201710122417.9A CN106887476B (zh) 2017-03-03 2017-03-03 P型perc双面太阳能电池及其组件、系统和制备方法

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WO2018157822A1 true WO2018157822A1 (fr) 2018-09-07

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