WO2018157825A1 - Cellule solaire à double face perc de type p, son montage et son système - Google Patents
Cellule solaire à double face perc de type p, son montage et son système Download PDFInfo
- Publication number
- WO2018157825A1 WO2018157825A1 PCT/CN2018/077592 CN2018077592W WO2018157825A1 WO 2018157825 A1 WO2018157825 A1 WO 2018157825A1 CN 2018077592 W CN2018077592 W CN 2018077592W WO 2018157825 A1 WO2018157825 A1 WO 2018157825A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- laser grooving
- solar cell
- laser
- aluminum
- line
- Prior art date
Links
- 101100409194 Rattus norvegicus Ppargc1b gene Proteins 0.000 title 1
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 131
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 125
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 claims abstract description 58
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 claims abstract description 58
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 claims abstract description 58
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 46
- 239000010703 silicon Substances 0.000 claims abstract description 46
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052709 silver Inorganic materials 0.000 claims abstract description 26
- 239000004332 silver Substances 0.000 claims abstract description 26
- 238000002161 passivation Methods 0.000 claims abstract description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000005022 packaging material Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 43
- 238000006243 chemical reaction Methods 0.000 description 27
- 238000000034 method Methods 0.000 description 27
- 238000007639 printing Methods 0.000 description 27
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000005684 electric field Effects 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000005038 ethylene vinyl acetate Substances 0.000 description 4
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000012876 topography Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000005341 toughened glass Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011267 electrode slurry Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
L'invention concerne une cellule solaire à double face PERC de type P, comprenant des électrodes d'argent arrière (1), des lignes de grille en aluminium arrière (2), une couche de passivation arrière (3), du silicium de type P (4), un émetteur de type N (5), un film de nitrure de silicium avant (6) et une électrode d'argent avant (7) en séquence. Les électrodes d'argent arrière sont reliées verticalement aux lignes de grille en aluminium arrière ; des intervalles entre les lignes de grille en aluminium arrière ne sont pas égaux ; une première zone de rainurage laser est formée par réalisation d'un rainurage laser sur la couche de passivation arrière ; les lignes de grille en aluminium arrière sont reliées au silicium de type P au moyen de la première zone de rainurage laser ; la première zone de rainurage laser comprend de multiples groupes de premières unités de rainurage laser qui sont disposées horizontalement ; chaque groupe de premières unités de rainurage laser comprend un ou plusieurs premiers corps de rainurage laser qui sont disposés horizontalement ; les lignes de grille en aluminium arrière sont verticales par rapport aux premiers corps de rainurage laser.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710122981.0A CN106876497B (zh) | 2017-03-03 | 2017-03-03 | P型perc双面太阳能电池的制备方法 |
| CN201710122981.0 | 2017-03-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2018157825A1 true WO2018157825A1 (fr) | 2018-09-07 |
Family
ID=59169866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2018/077592 WO2018157825A1 (fr) | 2017-03-03 | 2018-02-28 | Cellule solaire à double face perc de type p, son montage et son système |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN106876497B (fr) |
| WO (1) | WO2018157825A1 (fr) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107425080B (zh) * | 2017-03-03 | 2019-11-15 | 广东爱康太阳能科技有限公司 | P型perc双面太阳能电池及其组件、系统和制备方法 |
| CN106876497B (zh) * | 2017-03-03 | 2019-12-31 | 广东爱康太阳能科技有限公司 | P型perc双面太阳能电池的制备方法 |
| CN106952972B (zh) * | 2017-03-03 | 2019-04-19 | 广东爱旭科技股份有限公司 | P型perc双面太阳能电池及其组件、系统和制备方法 |
| CN107039543B (zh) * | 2017-03-03 | 2019-10-22 | 广东爱康太阳能科技有限公司 | P型perc双面太阳能电池及其组件、系统和制备方法 |
| CN108074998A (zh) * | 2017-12-22 | 2018-05-25 | 广东爱旭科技股份有限公司 | 管式perc双面太阳电池及其制备方法和专用电镀设备 |
| CN112510099B (zh) * | 2020-11-30 | 2022-05-20 | 晶科能源(海宁)有限公司 | 太阳能电池组件、太阳能电池片及其制造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202633327U (zh) * | 2012-07-05 | 2012-12-26 | 宁波尤利卡太阳能科技发展有限公司 | 晶体硅太阳电池正面栅线电极 |
| CN104576773A (zh) * | 2013-10-15 | 2015-04-29 | 太阳世界工业美国有限公司 | 太阳能电池接触结构 |
| CN105304731A (zh) * | 2014-07-24 | 2016-02-03 | 茂迪股份有限公司 | 太阳能电池及其模组 |
| CN106252443A (zh) * | 2015-06-09 | 2016-12-21 | 太阳世界创新有限公司 | 太阳能电池阵列 |
| CN106876497A (zh) * | 2017-03-03 | 2017-06-20 | 广东爱康太阳能科技有限公司 | P型perc双面太阳能电池及其组件、系统 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203277404U (zh) * | 2013-05-21 | 2013-11-06 | 江苏爱多光伏科技有限公司 | 一种设有六边形边框的太阳能电池片 |
| TWM472312U (zh) * | 2013-06-07 | 2014-02-11 | Neo Solar Power Corp | 具有改良正面電極設計的太陽能電池結構 |
-
2017
- 2017-03-03 CN CN201710122981.0A patent/CN106876497B/zh active Active
-
2018
- 2018-02-28 WO PCT/CN2018/077592 patent/WO2018157825A1/fr active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202633327U (zh) * | 2012-07-05 | 2012-12-26 | 宁波尤利卡太阳能科技发展有限公司 | 晶体硅太阳电池正面栅线电极 |
| CN104576773A (zh) * | 2013-10-15 | 2015-04-29 | 太阳世界工业美国有限公司 | 太阳能电池接触结构 |
| CN105304731A (zh) * | 2014-07-24 | 2016-02-03 | 茂迪股份有限公司 | 太阳能电池及其模组 |
| CN106252443A (zh) * | 2015-06-09 | 2016-12-21 | 太阳世界创新有限公司 | 太阳能电池阵列 |
| CN106876497A (zh) * | 2017-03-03 | 2017-06-20 | 广东爱康太阳能科技有限公司 | P型perc双面太阳能电池及其组件、系统 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106876497A (zh) | 2017-06-20 |
| CN106876497B (zh) | 2019-12-31 |
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