WO2018157522A1 - 利于吸收太阳光的p型perc双面太阳能电池及其制备方法 - Google Patents

利于吸收太阳光的p型perc双面太阳能电池及其制备方法 Download PDF

Info

Publication number
WO2018157522A1
WO2018157522A1 PCT/CN2017/089885 CN2017089885W WO2018157522A1 WO 2018157522 A1 WO2018157522 A1 WO 2018157522A1 CN 2017089885 W CN2017089885 W CN 2017089885W WO 2018157522 A1 WO2018157522 A1 WO 2018157522A1
Authority
WO
WIPO (PCT)
Prior art keywords
gate electrode
aluminum
type
solar cell
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/089885
Other languages
English (en)
French (fr)
Chinese (zh)
Inventor
林纲正
方结彬
陈刚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Aiko Solar Energy Technology Co Ltd
Guangdong Aiko Solar Energy Technology Co Ltd
Original Assignee
Zhejiang Aiko Solar Energy Technology Co Ltd
Guangdong Aiko Solar Energy Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhejiang Aiko Solar Energy Technology Co Ltd, Guangdong Aiko Solar Energy Technology Co Ltd filed Critical Zhejiang Aiko Solar Energy Technology Co Ltd
Priority to US16/490,035 priority Critical patent/US20200381571A1/en
Priority to JP2019548049A priority patent/JP6820435B2/ja
Priority to EP17898467.0A priority patent/EP3591716A4/en
Priority to KR1020197029104A priority patent/KR20200006039A/ko
Publication of WO2018157522A1 publication Critical patent/WO2018157522A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/148—Double-emitter photovoltaic cells, e.g. bifacial photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/488—Reflecting light-concentrating means, e.g. parabolic mirrors or concentrators using total internal reflection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/10—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in a single semiconductor substrate, the photovoltaic cells having vertical junctions or V-groove junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the technical field of solar cells, in particular to a P-type PERC double-sided solar cell which is good for absorbing sunlight and a preparation method thereof.
  • a crystalline silicon solar cell is a device that effectively absorbs solar radiation energy and converts light energy into electrical energy by using a photovoltaic effect.
  • a new hole-electron pair is formed, and the electric field at the PN junction Under the action, the holes flow from the N zone to the P zone, and the electrons flow from the P zone to the N zone, and a current is formed after the circuit is turned on.
  • Conventional crystalline silicon solar cells basically use only front passivation technology, depositing a layer of silicon nitride on the front side of the silicon wafer by PECVD to reduce the recombination rate of the minority on the front surface, which can greatly increase the open circuit voltage and short circuit of the crystalline silicon battery. Current, thereby increasing the photoelectric conversion efficiency of the crystalline silicon solar cell.
  • the solar cells absorb the most energy.
  • the solar cell In the fixed-mount photovoltaic system, since the orientation of the solar cell is fixed, the solar cell receives different angles of sunlight as the sun moves during the day, and the absorbed solar energy is also unstable. For single-axis tracking photovoltaic systems, the angle of sunlight is not well tracked and the solar energy is still not absorbed to the maximum extent.
  • One of the objectives of the present invention is to provide a P-type PERC double-sided solar cell that is advantageous for absorbing sunlight, which etches a plurality of grooves on the front surface of the battery wafer to capture more sunlight and enhance sunlight.
  • the absorption rate can increase the power generation of the double-sided battery fixed bracket photovoltaic system and the double-sided battery single-axis tracking photovoltaic system.
  • a P-type PERC double-sided solar cell that is good for absorbing sunlight, including a back electrode, a back silicon nitride film, and a back aluminum oxide arranged in this order from bottom to top.
  • a film, a P-type silicon, an N-type silicon, a front silicon nitride film, and a positive silver electrode wherein the P-type silicon is a silicon wafer of a battery, and the N-type silicon is an N-type emitter formed by diffusion on a front surface of the silicon wafer, the positive
  • the silver electrode is composed of a positive silver main gate electrode made of silver and a positive silver sub-gate electrode made of silver.
  • the positive silver sub-gate electrode is perpendicular to the positive silver main gate electrode, and the back electrode is made of silver back silver.
  • the main gate electrode and the back aluminum auxiliary gate electrode are made of aluminum, and the back aluminum secondary gate electrode and the back silver main gate electrode are perpendicular to each other, and the solar cell is further provided with a back silicon nitride film and a back aluminum oxide on the back surface.
  • the gate electrode is connected to the P-type silicon through the back aluminum strip, and is characterized by:
  • the front surface of the P-type silicon is provided with a plurality of grooves parallel to each other, the groove is exposed on the front silicon nitride film, the length direction of the groove is parallel to the positive silver main gate electrode, and the inner groove surface of the groove is a suede surface.
  • the pile surface is capable of receiving sunlight incident in different directions and capturing sunlight through multiple reflections and incidences inside the groove.
  • the solar cell of the present invention etches a plurality of grooves parallel to each other on the front side of the battery.
  • the double-sided battery-fixing bracket photovoltaic system although the front side of the battery is fixed in orientation, since the front surface is engraved with a groove, the pile structure in the groove can receive sunlight incident in different directions and pass through multiple reflections inside the groove. And incident, capturing sunlight, which can increase the absorption of sunlight by the fixed-mount photovoltaic system and the single-axis tracking photovoltaic system, and increase the power generation of the double-sided battery fixed-mount photovoltaic system and the single-axis tracking photovoltaic system.
  • the groove can adopt the following structure:
  • the groove is a continuous linear groove or a broken line segment groove, and each segment of the segment has a length of 10 to 60 micrometers.
  • the groove has a rectangular or square or V-shaped or pentagonal or hexagonal cross section, and the groove has a groove depth of 5 to 20 ⁇ m. Among several grooves parallel to each other, the spacing between adjacent grooves is 1 to 20 mm
  • the back silicon nitride film has a thickness of 20 to 500 nm.
  • the back aluminum oxide film has a thickness of 2 to 50 nm.
  • the number of the back aluminum secondary gate electrodes is 30 to 500, and the optimal number is 80 to 220.
  • the back silver main gate electrode is a continuous straight gate line or a segmented gate line.
  • the laser grooving zone is a plurality of, and the pattern of the laser grooving zone is a line segment type or a linear type or a dotted line type or a dot type, and the width of the laser grooved area is 10 to 500 micrometers, and the adjacent laser beam The spacing between the grooved areas is 0.5 to 10 mm.
  • the invention can be improved as follows: an outer aluminum frame of aluminum material is printed on the periphery of the back electrode, and the aluminum grid outer frame is respectively connected with the corresponding back silver main gate electrode and the back aluminum secondary gate electrode.
  • the aluminum grid frame is used to provide a transmission path for the electrons.
  • the line width of the screen is relatively narrow, and occasionally an aluminum gate is broken.
  • the aluminum gate breakage will cause a black break in the image of the EL test, which will affect the photoelectric conversion efficiency of the battery.
  • the invention adds a ring of aluminum grid outer frame on the periphery of the back electrode, and provides a transmission path for the electron to prevent the problem that the EL test grid and the photoelectric conversion efficiency are low caused by the aluminum gate grid.
  • the aluminum grid outer frame is respectively connected with the corresponding back silver main gate electrode and the back aluminum secondary gate electrode, and the aluminum grid outer frame may have a laser grooved area, which is connected with the P type silicon through the laser slotted area, and the aluminum grid outer frame is also There can be no laser slotted area.
  • the solar cell of the present invention can increase the absorption of sunlight by the fixed-mount photovoltaic system and the single-axis tracking photovoltaic system by etching a plurality of grooves parallel to each other on the front side of the silicon wafer.
  • the absorption rate can be increased by 3% to 8%
  • the power generation of the double-sided battery fixed bracket photovoltaic system and the single-axis tracking photovoltaic system can be increased by 2% to 6%.
  • Another object of the present invention is to provide a method for preparing a P-type PERC double-sided solar cell which is advantageous for absorbing sunlight.
  • the object of the present invention is achieved by the following technical solution: a method for preparing a P-type PERC double-sided solar cell that is suitable for absorbing sunlight, characterized in that the method comprises the following steps:
  • the silicon wafer is subjected to anti-LID annealing treatment to form a solar cell.
  • the step (8) of depositing the front silicon nitride film on the front side of the N-type silicon may also occur in the step (6) before the deposition of the aluminum oxide film on the back side of the silicon wafer, and the step (5) may also be omitted.
  • the preparation method increases the absorption of sunlight by the fixed-mount photovoltaic system and the single-axis tracking photovoltaic system by adding a laser engraving process before the flocking to etch a plurality of grooves parallel to each other on the front side of the battery, and improving the double-sided battery fixing.
  • the preparation method is convenient to operate, and the equipment input cost is low, the process is simple, and the compatibility with the current production line is good.
  • FIG. 1 is a cross-sectional view showing the overall structure of a P-type PERC double-sided solar cell which is advantageous for absorbing sunlight;
  • FIG. 2 is a front plan view of a P-type PERC double-sided solar cell of the present invention which is advantageous for absorbing sunlight;
  • Figure 3 is a rear plan view of a P-type PERC double-sided solar cell of the present invention which is advantageous for absorbing sunlight;
  • Figure 4 is a rear plan view showing another structure of a P-type PERC double-sided solar cell which is advantageous for absorbing sunlight;
  • Figure 5 is a rear plan view showing another structure of a P-type PERC double-sided solar cell which is advantageous for absorbing sunlight;
  • Figure 6 is a rear plan view showing another structure of a P-type PERC double-sided solar cell of the present invention which is advantageous for absorbing sunlight.
  • Backside silicon nitride film 4, back aluminum oxide film, 5, P type silicon, 6, N type silicon,
  • a P-type PERC double-sided solar cell which is suitable for absorbing sunlight, includes a back electrode, a back silicon nitride film 3, a back aluminum oxide film 4, and P, which are disposed in this order from bottom to top.
  • Type silicon 5, N type silicon 6, front silicon nitride film 7 and positive silver electrode 8 P type silicon 5 is a silicon wafer of the battery, N type silicon 6 is an N type emitter formed by diffusion on the front side of the silicon wafer, positive silver electrode 8 is composed of a positive silver main gate electrode 81 of silver and a positive silver sub-gate electrode 82 of silver, the positive silver sub-gate electrode 82 is perpendicular to the positive silver main gate electrode 81, and the back electrode 1 is made of silver.
  • the silver main gate electrode 11 and the back aluminum secondary gate electrode 12 made of aluminum are perpendicular to the back aluminum main gate electrode 11.
  • the solar cell is further provided with a backside silicon nitride film 3 and a back aluminum oxide film 4 on the back surface until the laser grooved region 2 of the P-type silicon 5, and the laser grooved region 2 is disposed in parallel with the back aluminum sub-gate electrode 12, and the laser is turned on.
  • the aluminum paste is printed in the groove region 2 to form a back aluminum strip 9, and the back electrode 1 is composed of a back silver main gate electrode 11 made of silver and a back aluminum secondary gate electrode 12 made of aluminum.
  • the back aluminum sub-gate electrode 12 is The back aluminum strip 9 in the laser grooving zone 2 is integrally formed by printing, and the back aluminum secondary gate electrode 12 is connected to the P-type silicon 5 through the back aluminum strip 9.
  • the front surface of the P-type silicon 5 is provided with a plurality of grooves 10 parallel to each other, and the groove 10 is exposed to the front silicon nitride film 7.
  • the length direction of the groove 10 is parallel to the positive silver main gate electrode 81, and the inner groove of the groove 10
  • the surface is suede, and the suede can receive sunlight incident in different directions, and captures sunlight through multiple reflections and incidence inside the groove.
  • the solar cell etches a plurality of grooves 10 parallel to each other on the front side of the battery.
  • the pile structure in the groove 10 can receive sunlight incident in different directions, and Through multiple reflections and incidence inside the groove 10, the sunlight is captured, and the absorption rate of sunlight is increased, thereby increasing the solidity.
  • the solar energy absorption of the fixed-cavity photovoltaic system and the single-axis tracking photovoltaic system improves the power generation of the double-sided battery fixed-mount photovoltaic system and the single-axis tracking photovoltaic system.
  • the groove 10 in this embodiment is a broken line segment groove, each segment of the segment has a length of 50 micrometers, the groove 10 has a V-shaped cross section, and the groove 10 has a groove depth of 15 micrometers, and a plurality of grooves parallel to each other. In 10, the spacing between adjacent grooves 10 is 10 mm.
  • the groove may be a continuous linear groove or a broken line segment groove, and when it is a broken line segment groove, each segment of the line segment has a length of 10 to 60 ⁇ m.
  • the cross section of the groove may also be a rectangle or a square or a pentagon or a hexagon, and the groove has a groove depth of 5 to 20 ⁇ m.
  • the spacing between adjacent grooves is 1 to 20 mm.
  • the back aluminum strip 9 and the back aluminum sub-gate electrode 12 in this embodiment are integrally printed and formed, which is actually a part of the back aluminum sub-gate electrode 12.
  • the back aluminum sub-gate electrode 12 is printed, the aluminum paste flows into the laser slotted area 2 A back aluminum strip 9 is formed inside.
  • the back surface aluminum oxide film 4 of the present embodiment is made of aluminum oxide (Al 2 O 3 ), and the back surface silicon nitride film 3 and the front silicon nitride film 7 are made of the same material, and are all silicon nitride (Si 3 N 4 ).
  • the pattern of the laser grooved area 2 is a straight line type, and a line type or a dotted line or a dot type can also be used.
  • the laser grooving zone 2 has a width of 30 microns and a width of between 10 and 500 microns, preferably 30 to 60 microns.
  • the back silver main gate electrode 11 is a continuous straight gate line
  • the number of back aluminum secondary gate electrodes 12 is 150
  • the thickness of the back silicon nitride film 3 is 20 nm
  • the thickness of the back aluminum oxide film 4 is 2 nm.
  • the thickness of the back silicon nitride film 3 may be in the range of 20 to 500 nm, for example, 200 nm, 300 nm, 400 nm, etc.
  • the thickness of the back aluminum oxide film 4 may be in the range of 2 to 50 nm, for example, 20 nm, 30 nm, 40 nm. Wait.
  • the back electrode can also adopt the structure of FIG. 4.
  • a ring of aluminum grid frame 20 made of aluminum is printed on the periphery of the back electrode, and the aluminum grid frame 20 is respectively corresponding to The back silver main gate electrode 11 and the back aluminum sub-gate electrode 12 are connected, and the aluminum grid outer frame 20 is used to provide a transmission path for the electrons, preventing the EL test grid and the photoelectric conversion efficiency caused by the aluminum gate grid.
  • a laser grooving zone 2 is further disposed in parallel under the aluminum grid frame 20, and is connected to the P-type silicon through the laser grooving zone 2.
  • the aluminum grid frame 20 may also be devoid of the laser grooving zone 2.
  • the aluminum grid outer frame 20 shown in FIG. 4 is a rectangular frame, and is respectively connected to a corresponding plurality of back silver main gate electrodes 11 and back aluminum secondary gate electrodes 12, and the aluminum grid outer frame 20 can also be selected according to the shape of the back electrodes.
  • Adapted structures such as rectangular or square boxes or round or oval frames.
  • the back electrode can also adopt the structure of FIG. 5.
  • the laser grooved area 2 is perpendicular to the back aluminum sub-gate electrode 12, and the laser grooved area 2 is plural, and the pattern of the laser grooved area is Straight type,
  • the spacing between adjacent laser grooved regions is 0.9 mm, and the spacing may also be within 0.5 to 10 mm, preferably 0.8 to 1 mm.
  • the back electrode can also adopt the structure of FIG. 6.
  • a ring of aluminum grid frame 20 made of aluminum is printed on the periphery of the back electrode, and the aluminum grid frame 20 is respectively corresponding to The back silver main gate electrode 11 and the back aluminum sub-gate electrode 12 are connected.
  • a laser grooving zone 2 perpendicular to the aluminum grid frame 20 is also formed under the aluminum grid frame 20 in FIG. 6, and is connected to the P-type silicon through the laser grooving zone 2.
  • the aluminum grid frame 20 may also be devoid of the laser grooving zone 2.
  • the preparation method of the P-type PERC double-sided solar cell which is suitable for absorbing sunlight comprises the following steps:
  • the positive electrode paste is printed on the front surface of the front silicon nitride film 7 by screen printing, or may be printed by an ink jet method to form a positive silver main gate electrode 81 and a positive silver sub-gate electrode 82, and the length of the groove 10 The direction is parallel to the positive silver main gate electrode 81;
  • the silicon wafer is subjected to anti-LID annealing treatment to form a solar cell.
  • the step (8) of depositing the front silicon nitride film 7 on the front side of the N-type silicon 6 may also occur in the step (6) before the back surface aluminum oxide film 4 is deposited on the back side of the silicon wafer, and the step (5) may also be omitted.
  • the second embodiment of the P-type PERC double-sided solar cell that is suitable for absorbing sunlight is different from the first embodiment in that, in the second embodiment, the back silver main gate electrode 11 is a segmented gate line, and the back aluminum sub-gate electrode 12 is The number of the roots was 100, the thickness of the back silicon nitride film 3 was 150 nm, and the thickness of the back aluminum oxide film 4 was 6 nm.
  • the third embodiment of the P-type PERC double-sided solar cell for absorbing sunlight is different from the first embodiment in that, in the third embodiment, the back silver main gate electrode 11 is a continuous straight gate line, and the back aluminum sub-gate electrode 12 is The number of the roots was 180, the thickness of the back silicon nitride film 3 was 140 nm, and the thickness of the back aluminum oxide film 4 was 15 nm.
  • the fourth embodiment of the P-type PERC double-sided solar cell that is suitable for absorbing sunlight is different from the first embodiment in that, in the fourth embodiment, the back silver main gate electrode 11 is a segmented gate line, and the back aluminum sub-gate electrode 12 is The number of the roots was 250, the thickness of the back silicon nitride film 3 was 180 nm, and the thickness of the back aluminum oxide film 4 was 25 nm.
  • the fifth embodiment of the P-type PERC double-sided solar cell for absorbing sunlight is different from the first embodiment in that, in the fifth embodiment, the back silver main gate electrode 11 is a continuous straight gate line, and the back aluminum sub-gate electrode 12
  • the number of the roots was 500
  • the thickness of the back silicon nitride film 3 was 500 nm
  • the thickness of the back aluminum oxide film 4 was 50 nm.

Landscapes

  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
PCT/CN2017/089885 2017-03-03 2017-06-24 利于吸收太阳光的p型perc双面太阳能电池及其制备方法 Ceased WO2018157522A1 (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US16/490,035 US20200381571A1 (en) 2017-03-03 2017-06-24 Bifacial p-type perc solar cell beneficial to sunlight absorption and preparation method therefor
JP2019548049A JP6820435B2 (ja) 2017-03-03 2017-06-24 太陽光の吸収に有効なｐ型ｐｅｒｃ両面太陽電池及びその製造方法
EP17898467.0A EP3591716A4 (en) 2017-03-03 2017-06-24 BIFACIAL SOLAR CELL OF PERC TYPE P-TYPE BENEFICIAL FOR THE ABSORPTION OF SOLAR LIGHT AND ITS PREPARATION PROCESS
KR1020197029104A KR20200006039A (ko) 2017-03-03 2017-06-24 태양광 흡수에 유리한 p형 perc 양면 태양전지 및 그 제조 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710123845.3A CN106898660B (zh) 2017-03-03 2017-03-03 利于吸收太阳光的p型perc双面太阳能电池及其制备方法
CN201710123845.3 2017-03-03

Publications (1)

Publication Number Publication Date
WO2018157522A1 true WO2018157522A1 (zh) 2018-09-07

Family

ID=59184626

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/089885 Ceased WO2018157522A1 (zh) 2017-03-03 2017-06-24 利于吸收太阳光的p型perc双面太阳能电池及其制备方法

Country Status (6)

Country Link
US (1) US20200381571A1 (https=)
EP (1) EP3591716A4 (https=)
JP (1) JP6820435B2 (https=)
KR (1) KR20200006039A (https=)
CN (1) CN106898660B (https=)
WO (1) WO2018157522A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110690299A (zh) * 2019-10-21 2020-01-14 华南理工大学 光伏太阳能电池电极栅线原位二次印刷装置及方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110459619B (zh) * 2019-06-05 2024-07-23 南京格兰泽光电科技有限公司 硒硫化锑电池组件及其制备方法
CN114944441B (zh) * 2022-05-23 2023-07-25 横店集团东磁股份有限公司 一种全黑晶硅太阳能电池及其制备方法与光伏组件

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103489934A (zh) * 2013-09-25 2014-01-01 晶澳（扬州）太阳能科技有限公司 一种双面透光的局部铝背场太阳能电池及其制备方法
CN205335274U (zh) * 2015-12-31 2016-06-22 广东爱康太阳能科技有限公司 一种局部铝背场的晶体硅太阳能电池
CN105932076A (zh) * 2016-05-23 2016-09-07 浙江晶科能源有限公司 一种光伏电池及其制备方法
US20160276499A1 (en) * 2015-03-17 2016-09-22 Solarworld Innovations Gmbh Solar cell
CN206505931U (zh) * 2017-03-03 2017-09-19 浙江爱旭太阳能科技有限公司 利于吸收太阳光的p型perc双面太阳能电池

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4434837B2 (ja) * 2004-05-27 2010-03-17 シャープ株式会社 太陽電池
US20070107773A1 (en) * 2005-11-17 2007-05-17 Palo Alto Research Center Incorporated Bifacial cell with extruded gridline metallization
WO2010104890A2 (en) * 2009-03-09 2010-09-16 The University Of North Carolina At Charlotte Efficiency enhancement of solar cells using light management
US8071418B2 (en) * 2010-06-03 2011-12-06 Suniva, Inc. Selective emitter solar cells formed by a hybrid diffusion and ion implantation process
US8609451B2 (en) * 2011-03-18 2013-12-17 Crystal Solar Inc. Insitu epitaxial deposition of front and back junctions in single crystal silicon solar cells
JP2012253253A (ja) * 2011-06-06 2012-12-20 Sharp Corp 太陽電池の製造方法
JP2014239085A (ja) * 2011-10-03 2014-12-18 三菱電機株式会社 太陽電池素子およびその製造方法
CN102569472B (zh) * 2012-01-09 2014-02-26 电子科技大学 一种硅光电池
JP2014146553A (ja) * 2013-01-30 2014-08-14 Kyocera Corp 太陽電池の電極用導電性ペーストおよびその製造方法
JP2015050277A (ja) * 2013-08-30 2015-03-16 シャープ株式会社 太陽電池およびその製造方法
JP2015106585A (ja) * 2013-11-28 2015-06-08 京セラ株式会社 太陽電池素子の製造方法および太陽電池モジュール
CN103618033A (zh) * 2013-12-05 2014-03-05 欧贝黎新能源科技股份有限公司 一种背钝化太阳电池的丝网印刷生产制备法
JP6525583B2 (ja) * 2014-12-25 2019-06-05 京セラ株式会社 太陽電池素子および太陽電池モジュール
TW201635561A (zh) * 2015-03-26 2016-10-01 新日光能源科技股份有限公司 具有背面多層抗反射鍍膜的太陽能電池

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103489934A (zh) * 2013-09-25 2014-01-01 晶澳（扬州）太阳能科技有限公司 一种双面透光的局部铝背场太阳能电池及其制备方法
US20160276499A1 (en) * 2015-03-17 2016-09-22 Solarworld Innovations Gmbh Solar cell
CN205335274U (zh) * 2015-12-31 2016-06-22 广东爱康太阳能科技有限公司 一种局部铝背场的晶体硅太阳能电池
CN105932076A (zh) * 2016-05-23 2016-09-07 浙江晶科能源有限公司 一种光伏电池及其制备方法
CN206505931U (zh) * 2017-03-03 2017-09-19 浙江爱旭太阳能科技有限公司 利于吸收太阳光的p型perc双面太阳能电池

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3591716A4 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110690299A (zh) * 2019-10-21 2020-01-14 华南理工大学 光伏太阳能电池电极栅线原位二次印刷装置及方法

Also Published As

Publication number Publication date
EP3591716A4 (en) 2020-09-23
EP3591716A1 (en) 2020-01-08
JP6820435B2 (ja) 2021-01-27
CN106898660B (zh) 2018-05-18
CN106898660A (zh) 2017-06-27
US20200381571A1 (en) 2020-12-03
JP2020509606A (ja) 2020-03-26
KR20200006039A (ko) 2020-01-17

Similar Documents

Publication Publication Date Title
US8916766B2 (en) Solar concentrator and photoelectric conversion structure
CN106876495A (zh) 一种p型perc双面太阳能电池及其制备方法
US20250176308A1 (en) Solar cell and manufacturing method therefor
CN102428570B (zh) 效率提高的太阳能电池和制造方法
CN104752562A (zh) 一种局部硼背场背钝化太阳能电池的制备方法
CN102623517A (zh) 一种背接触型晶体硅太阳能电池及其制作方法
WO2017128657A1 (zh) 一种晶硅太阳能电池的正面电极
CN105702755B (zh) 一种晶硅太阳能电池的正面电极
CN106887479A (zh) 一种防氧化的p型perc双面太阳能电池及其制备方法
WO2018157520A1 (zh) 一种改进型p型perc双面太阳能电池及其制备方法
WO2018157821A1 (zh) P型perc双面太阳能电池及其组件、系统和制备方法
CN107068777A (zh) 一种局部铝背场太阳能电池及其制备方法
WO2018157826A1 (zh) P型perc双面太阳能电池及其组件、系统和制备方法
WO2018157495A1 (zh) 打孔perc双面太阳能电池及其组件、系统和制备方法
WO2018157522A1 (zh) 利于吸收太阳光的p型perc双面太阳能电池及其制备方法
CN205564774U (zh) 光伏装置
WO2018157823A1 (zh) P型perc双面太阳能电池及其组件、系统和制备方法
WO2017128665A1 (zh) 一种晶硅太阳能电池
CN105552144A (zh) 一种晶硅太阳能电池的正面电极
CN206505931U (zh) 利于吸收太阳光的p型perc双面太阳能电池
CN206505928U (zh) 一种p型perc双面太阳能电池
CN106981525A (zh) P型双面太阳能电池及其制备方法
CN206650085U (zh) 一种防氧化的p型perc双面太阳能电池
CN107039538B (zh) 一种高光电转换效率太阳能电池及其制备方法
TWI812265B (zh) 熱載子太陽能電池及疊層太陽能電池

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17898467

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2019548049

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20197029104

Country of ref document: KR

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 2017898467

Country of ref document: EP

Effective date: 20191004

WWW Wipo information: withdrawn in national office

Ref document number: 2017898467

Country of ref document: EP