WO2017128657A1 - 一种晶硅太阳能电池的正面电极 - Google Patents

一种晶硅太阳能电池的正面电极 Download PDF

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WO2017128657A1
WO2017128657A1 PCT/CN2016/091830 CN2016091830W WO2017128657A1 WO 2017128657 A1 WO2017128657 A1 WO 2017128657A1 CN 2016091830 W CN2016091830 W CN 2016091830W WO 2017128657 A1 WO2017128657 A1 WO 2017128657A1
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gate lines
solar cell
crystalline silicon
silicon solar
cell according
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PCT/CN2016/091830
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English (en)
French (fr)
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郭灵山
何凤琴
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张甘霖
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to the technical field of solar cells, and in particular to a front electrode of a crystalline silicon solar cell.
  • a crystalline silicon solar cell is an electronic component that converts solar energy into electrical energy.
  • the preparation of crystalline silicon solar cells is generally carried out by processes such as texturing, diffusion, coating, screen printing, and sintering.
  • the velvet is divided into single crystal and polycrystalline velvet.
  • the single crystal battery is formed by the method of alkali velvet to form a pyramid suede on the surface of the silicon wafer, and the polycrystalline battery is formed by using an acid etching method to form a pitted surface on the surface of the silicon wafer.
  • the suede surface of the silicon surface can increase the absorption of sunlight on the surface of the battery to achieve the light trapping effect; the diffusion process forms a PN junction into the interior of the silicon wafer by means of thermal diffusion, so that when light is irradiated, a voltage can be formed inside the silicon wafer. It is the basis of solar cell power generation; the coating process is to reduce the composite of minority carriers on the surface of the battery, and can improve the conversion efficiency of the crystalline silicon solar cell; the screen printing process is to make the electrode of the solar cell, so that when the light is irradiated It is possible to derive the current. Screen printing is one of the most widely used processes in the preparation of crystalline silicon cells. The process sequence is to first print and dry the back electrode, then print and dry the aluminum back field, and finally print and dry the front electrode. When sintering is performed, the silver paste used for preparing the electrode is brought into contact with the battery.
  • the electrode structure In the front electrode of the crystalline silicon solar cell, the electrode structure generally includes a main gate line and a sub-gate line which are criss-crossed, and the main gate line is electrically connected to the sub-gate line.
  • the battery When there is light, the battery generates a current, and the current flows through the internal emitter to the surface electrode sub-gate line, collects through the sub-gate line and then flows to the battery main grid for export. The current will be lost during the collection of the secondary gate line, which we call the power loss of the resistor.
  • the main grid line and the sub-gate line of the battery are on the light-receiving surface of the battery, which inevitably blocks a part of the light from being irradiated on the surface of the battery, thereby reducing the effective light-receiving area of the battery, which is called optical loss.
  • optical loss the effective light-receiving area of the battery
  • the number of main gate lines is usually three, and the width thereof is about 1.5 mm; the number of the sub-gate lines is usually 80 to 100, and the width thereof is about 40 ⁇ m.
  • the width of the main gate line is wide, so that The strip of the front electrode and the battery can be soldered well, but the shading area is also large.
  • a front electrode structure without a main gate is proposed in the industry, mainly to remove three main gate lines in the front electrode structure, leaving only the sub-gate line, after the battery is completed, A very thin cylindrical ribbon is used to directly solder to the secondary grid, and the current is directly extracted by the ribbon.
  • the power of the photovoltaic module is lowered due to the abnormality of the soldering or the inability to solder due to the small width of the sub-gate line and the sub-gate line being too low.
  • the present invention provides a front electrode of a crystalline silicon solar cell, which can achieve the purpose of reducing the shading area and ensuring smooth current export.
  • soldering contact is formed on the fine grid line by a secondary printing process.
  • the plurality of sub-gate lines are equally spaced along the first direction
  • the M fine gate lines are equally spaced along the second direction
  • the second direction is perpendicular to the first direction.
  • the number of the sub-gate lines is 80 to 100.
  • soldering contact is disposed at a position where the fine gate line intersects the sub-gate line.
  • N solder contacts on each of the fine gate lines are arranged at equal intervals along the length direction of the thin gate lines.
  • solder contacts in the front electrode are distributed in an array of N rows x M columns.
  • the front electrode of the crystalline silicon solar cell provided by the embodiment of the present invention, Replacing the prior art main gate lines with a larger number of smaller and smaller width gate lines, the overall shading area is smaller, the optical loss is reduced, and a larger number of fine grid lines are evenly distributed on the front side of the solar cell, The current collected by the sub-gate line can be more smoothly derived, which reduces the power loss.
  • a square solder contact with a large side length is laminated on the fine grid line, which increases the contact area of the solder joint and the height of the solder joint.
  • FIG. 1 is a schematic structural view of a front electrode of a solar cell according to an embodiment of the present invention
  • Figure 2 is an enlarged schematic view of a portion A of Figure 1.
  • the present embodiment provides a front electrode of a crystalline silicon solar cell.
  • the front electrode includes two rows spaced apart from each other in the first direction (such as the Y direction in FIG. 1). a plurality of sub-gate lines 10, a plurality of thin gate lines 20 spaced apart from each other in the second direction (in the X direction in FIG. 1), the plurality of sub-gate lines 10 and the plurality of fine gate lines 20 are electrically connected to each other.
  • the sub-gate line 10 is mainly used to collect the photo-generated current generated by the solar cell, and the fine-gate line 20 is used to collect and output the current collected by the sub-gate line 10.
  • each of the fine gate lines 20 is further provided with a plurality of soldering contacts 30 spaced apart from each other, and the soldering contacts 30 are stacked on the fine gate lines 20 and electrically connected to the fine grid lines 20. Connected, the shape of the soldering contact 30 is square.
  • the soldering contact 30 is mainly used for soldering connection to the solder ribbon after the battery is fabricated.
  • the number of the sub-gate lines 10 may be selected from the range of 80 to 100, and the width may be selected to be in the range of 30 to 50 ⁇ m.
  • the number M of the fine gate lines 20 can be selected in the range of 10 to 20, and the width D thereof can be selected in the range of 0.10 to 0.25 mm.
  • the number N of the soldering contacts 30 provided on each of the fine gate lines 20 may be selected to be in the range of 5 to 15, and the side length L of the soldering contacts 30 may be selected to be in the range of 0.2 to 1 mm, and the soldering contacts are to be satisfied.
  • the side length of 30 is larger than the width of the fine grid line 20.
  • the solder contacts 30 are stacked on the fine gate lines 20. Specifically, in the preparation of the front electrode structure, the sub-gate lines 10 and the fine gate lines 20 are first prepared by a single printing process, and then the solder contacts 30 are prepared on the fine gate lines 20 by a secondary printing process.
  • the plurality of sub-gate lines 10 are arranged at equal intervals in a first direction (such as the Y direction in FIG. 1), and the M thin gate lines 20 are in a second direction ( The X direction in FIG. 1 is equally spaced, and the second direction is perpendicular to the first direction.
  • the soldering contact 30 is disposed at a position where the fine gate line 20 intersects the sub-gate line 10, and N soldering contacts 30 on each of the fine gate lines 20 along the thin grid line 20 is arranged at equal intervals in the longitudinal direction.
  • the arrangement pitch of the N solder contacts 30 on each of the fine gate lines 20 is equal, and therefore, in the entire front electrode structure, all the solder contacts 30 are provided.
  • the front electrode of the crystalline silicon solar cell provided by the above embodiments can effectively reduce the light shielding area.
  • the shading area is calculated according to the front electrode of the existing three main grid and the front electrode structure provided by the embodiment of the present invention:
  • the front electrode structure of the existing three main grids In the conventional structure of three 1.5mm wide main gate lines and 90 40 ⁇ m sub grid lines, the main gate lines can be designed in a hollow form to reduce the silver paste used for printing, but all areas of the main grid will still be soldered to a width of about 1.5 mm during soldering.
  • the total occlusion area of the conventional three-main gate front electrode is 1262.6 mm 2 .
  • the number of sub-gate lines is 90 and the width is 40 ⁇ m; the number of fine gate lines is 15 and the width is 0.2 mm; the number of solder contacts on each fine grid line is 10
  • the shape of the solder contact is square, and its side length L is 0.8 mm.
  • total shielding area 566.12mm 2 +468 mm 2 + 72mm 2 1106.12mm 2.
  • the front electrode of the crystalline silicon solar cell provided by the above embodiment, a larger number of fine gate lines with smaller widths are used instead of the main gate lines in the prior art, and the overall shading area is smaller and reduced.
  • Light loss, and a larger number of fine grid lines are evenly distributed on the front side of the solar cell, so that the current collected by the sub-gate line can be more smoothly derived, reducing power loss; in addition, the stacking on the fine grid line has a larger side length
  • the square welding contact increases the contact area of the solder joint and the height of the solder joint.

Abstract

本发明公开了一种晶硅太阳能电池的正面电极，包括沿第一方向相互间隔排列的多条副栅线，所述正面电极还包括沿第二方向相互间隔排列的M条细栅线，所述细栅线与所述副栅线电性连接，所述细栅线的宽度为0.10～0.25mm；其中，M＝10～20；其中，每一细栅线上还设置有相互间隔的N个焊接触点，所述焊接触点叠层设置在所述细栅线上并且与所述细栅线电性连接，所述焊接触点的形状为方形，其边长的范围是0.2～1mm，并且所述焊接触点的边长大于所述细栅线的宽度；其中，N＝5～15。该正面电极结构可以达到既减小遮光面积又保证电流顺利导出的目的。

Description

一种晶硅太阳能电池的正面电极 技术领域
本发明涉及太阳能电池技术领域，具体涉及一种晶硅太阳能电池的正面电极。
背景技术
晶硅太阳能电池是一种可以将太阳光能转化成为电能的电子元器件。晶体硅类太阳能电池的制备一般经过制绒、扩散、镀膜、丝网印刷、烧结等工序。制绒分为单晶、多晶制绒，单晶电池是使用碱制绒的方法在硅片表面形成金字塔绒面，多晶电池使用酸刻蚀的方法在硅片表面形成凹坑绒面，硅表面的绒面可以增加太阳光在电池表面的吸收，达到陷光作用；扩散工序是通过热扩散的方式向硅片内部形成P-N结，这样当有光照射时，硅片内部就可以形成电压，是太阳电池发电的基础；镀膜工艺是为了减少少数载流子在电池表面的复合，可以提高晶体硅太阳能电池片的转换效率；丝网印刷工序就是制作太阳能电池的电极，这样当光照射时就可以把电流导出。丝网印刷是现在晶硅电池制备中应用最广泛的一种工艺，工艺顺序为先进行背面电极印刷和烘干，然后进行铝背场的印刷和烘干，最后进行正面电极的印刷、烘干，在进行烧结，让制备电极使用的银浆和电池形成接触。
晶硅太阳能电池的正面电极中，电极结构通常包括纵横交错的主栅线和副栅线，主栅线与副栅线电性相连。当有光照时，电池片就会产生电流，电流经过内部发射极流向表面电极副栅线，经由副栅线收集然后汇流到电池主栅线上进行导出。电流在副栅线收集的过程中会产生损失，这种我们称为是电阻的功率损失。电池主栅线和副栅线处于电池的受光面，这样必然会遮挡一部分光照射在电池表面，从而减少了电池的有效受光面积，这部分损失我们称之为光学损失。不论是P型或是N型电池，只要电池正面存在电极结构，就需要考虑到电极结构的不断优化，以达到既减小遮光面积又保证电流顺利导出的目的。
现有的正面电极结构中，主栅线的数量通常为3条，其宽度为1.5mm左右；副栅线的数量通常为80～100条，其宽度为40μm左右。主栅线的宽度较宽，使 得正面电极和电池的焊带可以良好地焊接，但是遮光面积也较大。近年来，为了减少正面电极的遮光面积，业内提出了一种无主栅的正面电极结构，主要是将正面电极结构中的3条主栅线去除，仅保留副栅线，电池制作完成后，使用极细的圆柱形焊带直接与副栅线焊接，由焊带直接导出电流。在极细的焊带与副栅线的焊接过程中，由于副栅线的宽度较小、副栅线过低等造成虚焊或无法焊接的异常情况，使光伏组件的功率降低。
发明内容
鉴于现有技术存在的不足，本发明提供了一种晶硅太阳能电池的正面电极，该正面电极结构可以达到既减小遮光面积又保证电流顺利导出的目的。
为了实现上述目的，本发明采用了如下的技术方案：
一种晶硅太阳能电池的正面电极，包括沿第一方向相互间隔排列的多条副栅线，其中，所述正面电极还包括沿第二方向相互间隔排列的M条细栅线，所述细栅线与所述副栅线电性连接，所述细栅线的宽度为0.10～0.25mm；其中，M＝10～20；其中，每一细栅线上还设置有相互间隔的N个焊接触点，所述焊接触点叠层设置在所述细栅线上并且与所述细栅线电性连接，所述焊接触点的形状为方形，其边长的范围是0.2～1mm，并且所述焊接触点的边长大于所述细栅线的宽度；其中，N＝5～15。
进一步地，所述焊接触点通过二次印刷工艺形成于所述细栅线上。
进一步地，所述多条副栅线沿第一方向等间距排列，所述M条细栅线沿第二方向等间距排列，所述第二方向与所述第一方向相互垂直。
进一步地，所述副栅线的数量为80～100条。
进一步地，所述焊接触点设置于所述细栅线与所述副栅线相交的位置。
进一步地，每一细栅线上的N个焊接触点沿所述细栅线的长度方向上等间距排列。
进一步地，所述正面电极中的所有焊接触点呈N行×M列的阵列分布。
进一步地，所述细栅线的宽度为0.2mm；所述焊接触点的形状为正方形，其边长为0.8mm；其中，M＝15，N＝10。
相比于现有技术，本发明实施例提供的晶硅太阳能电池的正面电极中，使 用数量更多宽度更小的细栅线代替现有技术中的主栅线，总体上遮光面积更小，减小了光损耗，并且更多数量的细栅线均匀分布在太阳能电池正面，使得副栅线收集的电流可以更加顺利地导出，降低了功率损耗；另外，在细栅线上叠层设置边长较大的方形焊接触点，增加了焊接点的接触面积和焊接点的高度，在焊接焊带时，较少了焊带与电池片焊接异常的问题。
附图说明
图1是本发明实施例提供的太阳能电池正面电极的结构示意图；
图2是图1中A部分的放大示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面结合附图对本发明的具体实施方式进行详细说明。这些实施方式的示例在附图中进行了例示。附图中所示和根据附图描述的本发明的实施方式仅仅是示例性的，并且本发明并不限于这些实施方式。
在此，还需要说明的是，为了避免因不必要的细节而模糊了本发明，在附图中仅仅示出了与根据本发明的方案密切相关的结构和/或处理步骤，而省略了与本发明关系不大的其他细节。
参阅图1和图2，本实施例提供了一种晶硅太阳能电池的正面电极，如图1所示，该正面电极包括沿第一方向(如图1中的Y方向)相互间隔且平行排列的多条副栅线10，沿第二方向(如图1中的X方向)相互间隔且平行排列的多条细栅线20，所述多条副栅线10与所述多条细栅线20相互电性连接。其中，副栅线10主要用于收集太阳能电池产生的光生电流，细栅线20用于将副栅线10收集的电流汇集输出。进一步地，每一细栅线20上还设置有相互间隔的多个焊接触点30，所述焊接触点30叠层设置在所述细栅线20上并且与所述细栅线20电性连接，所述焊接触点30的形状为方形。所述焊接触点30主要是用于在电池制作完成后与焊带焊接连接。
其中，副栅线10的数量可以选择在80～100条的范围内，其宽度可以选择在30～50μm的范围内。细栅线20的数量M可以选择在10～20的范围内，其宽度D可以选择在0.10～0.25mm的范围内。每一细栅线20上设置的焊接触点30的数量N可以选择在5～15的范围内，焊接触点30的边长L可以选择在0.2～1mm的范围内，并且要满足焊接触点30的边长大于细栅线20的宽度。在本实施例 中，副栅线10的数量为90条，副栅线10的宽度为40μm；细栅线20的数量M＝15，细栅线20的宽度D为0.2mm；每一细栅线20上的焊接触点30的数量N＝10，焊接触点30的形状为正方形，其边长L为0.8mm。
其中，所述焊接触点30叠层设置在所述细栅线20上。具体地，在制备正面电极结构时，首先通过一次印刷工艺制备获得副栅线10和细栅线20，然后再通过二次印刷工艺在所述细栅线20上制备获得焊接触点30。
在本实施例中，如图1所示，所述多条副栅线10沿第一方向(如图1中的Y方向)等间距排列，所述M条细栅线20沿第二方向(如图1中的X方向)等间距排列，所述第二方向与所述第一方向相互垂直。进一步地，所述焊接触点30设置于所述细栅线20与所述副栅线10相交的位置，并且，每一细栅线20上的N个焊接触点30沿所述细栅线20的长度方向上等间距排列。
更具体地，在本实施例中，如图1所示，每一细栅线20上的N个焊接触点30的排列间距都相等，因此，在整个正面电极结构中，所有焊接触点30呈N行×M列的阵列分布。
以上实施例提供的晶硅太阳能电池的正面电极可以有效地降低遮光面积。以太阳能电池正面的尺寸为156mm×156mm的正方形为例，按照现有的三主栅的正面电极和本发明实施例提供的正面电极结构分别计算遮光面积：
1、现有的三主栅的正面电极结构。常规三根1.5mm宽主栅线、90根40μm副栅线的结构中，主栅线可设计为镂空形式，降低印刷使用的银浆，但焊接时主栅所有区域仍会焊上1.5mm宽度左右的焊带而遮挡阳光。因此主栅处对阳光的遮挡面积为1.5mm×3×156mm＝702mm2；副栅线及4条边框遮挡面积为0.04mm×(90+2)×(153.5mm-1.5mm×3)+2×153.5mm×0.04mm＝560.6mm2。常规三主栅正面电极的总遮挡面积为1262.6mm2。
2、本发明实施例提供的正面电极结构。按照具体地的例子，副栅线的数量为90条，其宽度为40μm；细栅线的数量为15条，其宽度为0.2mm；每一细栅线上的焊接触点的数量为10个，焊接触点的形状为正方形，其边长L为0.8mm。则：15根细栅线对阳光的遮挡面积为0.2mm×15×156mm＝468mm2；副栅线及4条边框对阳光的遮挡为0.04mm×(90+2)×(153.5mm-0.2mm×15)+0.04mm×2×153.5mm＝566.12mm2，除细栅线外0.8mm边长的正方形图案对阳光的遮挡为(0.8mm-0.2mm)×0.8mm×150＝72mm2，总遮挡面积为566.12mm2+468 mm2+72mm2＝1106.12mm2。本发明实施例提供的正面电极相比于现有的三主栅的正面电极，其减少的遮光面积为：1262.6mm2-1106.12mm2＝156.48mm2。
综上所述，以上实施例提供的晶硅太阳能电池的正面电极中，使用数量更多宽度更小的细栅线代替现有技术中的主栅线，总体上遮光面积更小，减小了光损耗，并且更多数量的细栅线均匀分布在太阳能电池正面，使得副栅线收集的电流可以更加顺利地导出，降低了功率损耗；另外，在细栅线上叠层设置边长较大的方形焊接触点，增加了焊接点的接触面积和焊接点的高度，在焊接焊带时，较少了焊带与电池片焊接异常的问题。
需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (20)

  1. 一种晶硅太阳能电池的正面电极，包括沿第一方向相互间隔排列的多条副栅线，其中，
    所述正面电极还包括沿第二方向相互间隔排列的M条细栅线，所述细栅线与所述副栅线电性连接，所述细栅线的宽度为0.10～0.25mm；其中，M＝10～20；
    其中，每一细栅线上还设置有相互间隔的N个焊接触点，所述焊接触点叠层设置在所述细栅线上并且与所述细栅线电性连接，所述焊接触点的形状为方形，其边长的范围是0.2～1mm，并且所述焊接触点的边长大于所述细栅线的宽度；其中，N＝5～15。
  2. 根据权利要求1所述的晶硅太阳能电池的正面电极，其中，所述焊接触点通过二次印刷工艺形成于所述细栅线上。
  3. 根据权利要求1所述的晶硅太阳能电池的正面电极，其中，所述多条副栅线沿第一方向等间距排列，所述M条细栅线沿第二方向等间距排列，所述第二方向与所述第一方向相互垂直。
  4. 根据权利要求3所述的晶硅太阳能电池的正面电极，其中，所述副栅线的数量为80～100条。
  5. 根据权利要求1所述的晶硅太阳能电池的正面电极，其中，所述焊接触点设置于所述细栅线与所述副栅线相交的位置。
  6. 根据权利要求5所述的晶硅太阳能电池的正面电极，其中，每一细栅线上的N个焊接触点沿所述细栅线的长度方向上等间距排列。
  7. 根据权利要求6所述的晶硅太阳能电池的正面电极，其中，所述正面电极中的所有焊接触点呈N行×M列的阵列分布。
  8. 根据权利要求7所述的晶硅太阳能电池的正面电极，其中，所述细栅线的宽度为0.2mm；所述焊接触点的形状为正方形，其边长为0.8mm；其中，M＝15，N＝10。
  9. 根据权利要求2所述的晶硅太阳能电池的正面电极，其中，所述焊接触点设置于所述细栅线与所述副栅线相交的位置。
  10. 根据权利要求9所述的晶硅太阳能电池的正面电极，其中，每一细栅线 上的N个焊接触点沿所述细栅线的长度方向上等间距排列。
  11. 根据权利要求10所述的晶硅太阳能电池的正面电极，其中，所述正面电极中的所有焊接触点呈N行×M列的阵列分布。
  12. 根据权利要求11所述的晶硅太阳能电池的正面电极，其中，所述细栅线的宽度为0.2mm；所述焊接触点的形状为正方形，其边长为0.8mm；其中，M＝15，N＝10。
  13. 根据权利要求3所述的晶硅太阳能电池的正面电极，其中，所述焊接触点设置于所述细栅线与所述副栅线相交的位置。
  14. 根据权利要求13所述的晶硅太阳能电池的正面电极，其中，每一细栅线上的N个焊接触点沿所述细栅线的长度方向上等间距排列。
  15. 根据权利要求14所述的晶硅太阳能电池的正面电极，其中，所述正面电极中的所有焊接触点呈N行×M列的阵列分布。
  16. 根据权利要求15所述的晶硅太阳能电池的正面电极，其中，所述细栅线的宽度为0.2mm；所述焊接触点的形状为正方形，其边长为0.8mm；其中，M＝15，N＝10。
  17. 根据权利要求4所述的晶硅太阳能电池的正面电极，其中，所述焊接触点设置于所述细栅线与所述副栅线相交的位置。
  18. 根据权利要求17所述的晶硅太阳能电池的正面电极，其中，每一细栅线上的N个焊接触点沿所述细栅线的长度方向上等间距排列。
  19. 根据权利要求18所述的晶硅太阳能电池的正面电极，其中，所述正面电极中的所有焊接触点呈N行×M列的阵列分布。
  20. 根据权利要求19所述的晶硅太阳能电池的正面电极，其中，所述细栅线的宽度为0.2mm；所述焊接触点的形状为正方形，其边长为0.8mm；其中，M＝15，N＝10。
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