CN106898660B - 利于吸收太阳光的p型perc双面太阳能电池及其制备方法 - Google Patents

利于吸收太阳光的p型perc双面太阳能电池及其制备方法 Download PDF

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CN106898660B
CN106898660B CN201710123845.3A CN201710123845A CN106898660B CN 106898660 B CN106898660 B CN 106898660B CN 201710123845 A CN201710123845 A CN 201710123845A CN 106898660 B CN106898660 B CN 106898660B
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aluminum
silicon
electrode
silver
solar cell
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CN106898660A (zh
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林纲正
方结彬
陈刚
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Zhejiang Love Solar Energy Technology Co Ltd
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Zhejiang Love Solar Energy Technology Co Ltd
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Priority to CN201710123845.3A priority Critical patent/CN106898660B/zh
Priority to US16/490,035 priority patent/US20200381571A1/en
Priority to JP2019548049A priority patent/JP6820435B2/ja
Priority to EP17898467.0A priority patent/EP3591716A4/en
Priority to KR1020197029104A priority patent/KR20200006039A/ko
Priority to PCT/CN2017/089885 priority patent/WO2018157522A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/148—Double-emitter photovoltaic cells, e.g. bifacial photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/488—Reflecting light-concentrating means, e.g. parabolic mirrors or concentrators using total internal reflection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/10—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in a single semiconductor substrate, the photovoltaic cells having vertical junctions or V-groove junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
CN201710123845.3A 2017-03-03 2017-03-03 利于吸收太阳光的p型perc双面太阳能电池及其制备方法 Active CN106898660B (zh)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CN201710123845.3A CN106898660B (zh) 2017-03-03 2017-03-03 利于吸收太阳光的p型perc双面太阳能电池及其制备方法
US16/490,035 US20200381571A1 (en) 2017-03-03 2017-06-24 Bifacial p-type perc solar cell beneficial to sunlight absorption and preparation method therefor
JP2019548049A JP6820435B2 (ja) 2017-03-03 2017-06-24 太陽光の吸収に有効なｐ型ｐｅｒｃ両面太陽電池及びその製造方法
EP17898467.0A EP3591716A4 (en) 2017-03-03 2017-06-24 BIFACIAL SOLAR CELL OF PERC TYPE P-TYPE BENEFICIAL FOR THE ABSORPTION OF SOLAR LIGHT AND ITS PREPARATION PROCESS
KR1020197029104A KR20200006039A (ko) 2017-03-03 2017-06-24 태양광 흡수에 유리한 p형 perc 양면 태양전지 및 그 제조 방법
PCT/CN2017/089885 WO2018157522A1 (zh) 2017-03-03 2017-06-24 利于吸收太阳光的p型perc双面太阳能电池及其制备方法

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CN201710123845.3A CN106898660B (zh) 2017-03-03 2017-03-03 利于吸收太阳光的p型perc双面太阳能电池及其制备方法

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CN106898660B true CN106898660B (zh) 2018-05-18

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US (1) US20200381571A1 (https=)
EP (1) EP3591716A4 (https=)
JP (1) JP6820435B2 (https=)
KR (1) KR20200006039A (https=)
CN (1) CN106898660B (https=)
WO (1) WO2018157522A1 (https=)

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CN110459619B (zh) * 2019-06-05 2024-07-23 南京格兰泽光电科技有限公司 硒硫化锑电池组件及其制备方法
CN110690299B (zh) * 2019-10-21 2024-06-28 华南理工大学 光伏太阳能电池电极栅线原位二次印刷装置及方法
CN114944441B (zh) * 2022-05-23 2023-07-25 横店集团东磁股份有限公司 一种全黑晶硅太阳能电池及其制备方法与光伏组件

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CN206505931U (zh) * 2017-03-03 2017-09-19 浙江爱旭太阳能科技有限公司 利于吸收太阳光的p型perc双面太阳能电池

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JP4434837B2 (ja) * 2004-05-27 2010-03-17 シャープ株式会社 太陽電池
US20070107773A1 (en) * 2005-11-17 2007-05-17 Palo Alto Research Center Incorporated Bifacial cell with extruded gridline metallization
WO2010104890A2 (en) * 2009-03-09 2010-09-16 The University Of North Carolina At Charlotte Efficiency enhancement of solar cells using light management
US8071418B2 (en) * 2010-06-03 2011-12-06 Suniva, Inc. Selective emitter solar cells formed by a hybrid diffusion and ion implantation process
US8609451B2 (en) * 2011-03-18 2013-12-17 Crystal Solar Inc. Insitu epitaxial deposition of front and back junctions in single crystal silicon solar cells
JP2012253253A (ja) * 2011-06-06 2012-12-20 Sharp Corp 太陽電池の製造方法
JP2014239085A (ja) * 2011-10-03 2014-12-18 三菱電機株式会社 太陽電池素子およびその製造方法
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JP2015050277A (ja) * 2013-08-30 2015-03-16 シャープ株式会社 太陽電池およびその製造方法
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JP2015106585A (ja) * 2013-11-28 2015-06-08 京セラ株式会社 太陽電池素子の製造方法および太陽電池モジュール
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CN206505931U (zh) * 2017-03-03 2017-09-19 浙江爱旭太阳能科技有限公司 利于吸收太阳光的p型perc双面太阳能电池

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EP3591716A4 (en) 2020-09-23
EP3591716A1 (en) 2020-01-08
JP6820435B2 (ja) 2021-01-27
WO2018157522A1 (zh) 2018-09-07
CN106898660A (zh) 2017-06-27
US20200381571A1 (en) 2020-12-03
JP2020509606A (ja) 2020-03-26
KR20200006039A (ko) 2020-01-17

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Denomination of invention: P-type perc double-sided solar cell for absorbing sunlight and its preparation method

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