WO2018155421A1 - Formation method of resin film and deposition device of resin film - Google Patents

Formation method of resin film and deposition device of resin film Download PDF

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Publication number
WO2018155421A1
WO2018155421A1 PCT/JP2018/005939 JP2018005939W WO2018155421A1 WO 2018155421 A1 WO2018155421 A1 WO 2018155421A1 JP 2018005939 W JP2018005939 W JP 2018005939W WO 2018155421 A1 WO2018155421 A1 WO 2018155421A1
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WO
WIPO (PCT)
Prior art keywords
film
mask
substrate
resin
resin material
Prior art date
Application number
PCT/JP2018/005939
Other languages
French (fr)
Japanese (ja)
Inventor
信 青代
健介 清
高橋　明久
Original Assignee
株式会社アルバック
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社アルバック filed Critical 株式会社アルバック
Priority to JP2019501331A priority Critical patent/JP6713087B2/en
Priority to KR1020197012360A priority patent/KR102249249B1/en
Priority to CN201880004427.5A priority patent/CN110023529B/en
Publication of WO2018155421A1 publication Critical patent/WO2018155421A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
    • B05C9/08—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation
    • B05C9/12—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation being performed after the application
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0005—Separation of the coating from the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5873—Removal of material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/12—Chemical modification
    • C08J7/123—Treatment by wave energy or particle radiation

Definitions

  • the present invention relates to a resin film forming method and a resin film forming apparatus capable of easily removing a resin material film formed on a mask in a reduced pressure atmosphere.
  • a vapor deposition polymerization method or an ultraviolet curing method is widely used as a method for producing a resin film made of a polymer organic material.
  • a low molecular organic gas is introduced into a decompressed treatment tank, the resin material supplied onto the object to be polymerized undergoes a polymerization reaction, and a polymer resin film is formed on the object to be processed.
  • the method has a feature that the coverage (coverage) of the resin film on the surface of the object to be processed is good.
  • Patent Document 1 discloses a film forming apparatus suitable for this.
  • FIG. 7 is a flowchart showing a conventional method for forming a resin film, and shows a case where an acrylic resin film F is formed as a representative example of a resin film using a metal mask MY.
  • the substrate S is moved into the deposition chamber (SY1, SY2).
  • a metal mask MY provided with a desired opening is placed on the film forming surface of the substrate S (SY3).
  • the deposition surface of the substrate S at the position of the opening is exposed as shown in FIG.
  • an acrylic material film f as a representative example of the resin material film is formed on the substrate S through the metal mask MY (SY4).
  • the acrylic material film f includes a portion f1 that covers the substrate S and a portion f2 that covers the metal mask MY.
  • the acrylic material film f is irradiated with ultraviolet rays (UV) to cure the acrylic material film f to form an acrylic resin film F (SY5).
  • the metal mask MY is peeled from the substrate S by moving the metal mask MY in the direction of the arrow (SY6).
  • the metal mask MY is cleaned and reused after a single film formation or after being used a plurality of times by changing the substrate (a plurality of film formations are performed).
  • the removal of the acrylic resin film F deposited on the metal mask MY has been performed by a method of removing the metal mask MY from the inside of the acrylic resin film forming apparatus to the outside and performing a wet etching process. Therefore, development of an acrylic resin film forming method and an acrylic resin film forming apparatus that can easily remove the acrylic resin film formed on the mask inside the film forming apparatus in a reduced pressure atmosphere has been expected.
  • the present invention has been made in view of the circumstances described above, and a resin film is not formed on the metal mask, and the resin film forming method and the resin film can be repeatedly used without removing the metal mask from the film forming apparatus and cleaning it.
  • An object of the present invention is to provide a film forming apparatus. It is an object of the present invention to provide a resin film forming method and a resin film forming apparatus in which a resin film is not formed on a mask inside a film forming apparatus in a reduced pressure atmosphere.
  • the method for forming a resin film according to the first aspect of the present invention is a method for forming a resin film on a substrate in a reduced-pressure atmosphere using a mask having a mask body made of a metal material and having a predetermined opening.
  • the mask In a reduced-pressure atmosphere, the mask is provided so as to be in contact with the substrate (film formation surface) placed on a cooled support table, and the vaporized resin material is supplied through the mask to be condensed on the substrate.
  • the heat treatment in the third step may be a heating temperature increase for the mask using a heating device.
  • the heat treatment in the third step may be performed by natural temperature increase due to the mask being separated from the support base.
  • the mask in the heat treatment in the third step, is separated from the support base and heated by radiant heat from a heated chamber or shower plate. Good.
  • a resin film forming apparatus is an apparatus for forming a resin film on a substrate in a reduced-pressure atmosphere using a mask having a mask body made of a metal material and having a predetermined opening.
  • the substrate supporting part includes a temperature control device for supplying the vaporized resin material, which is the material of the resin film, onto the substrate and condensing it to form the resin material film, which keeps the substrate in a temperature band of zero degrees or less.
  • the mechanism for heat-treating the resin material film may be a heating apparatus that promotes an increase in the temperature of the mask.
  • the mechanism for heat-treating the resin material film may be a moving device for separating the mask from a support base.
  • the mechanism for heat-treating the resin material film may be a chamber heating apparatus for housing the substrate.
  • the method for forming a resin film according to an aspect of the present invention is a state in which, in the third step, before the resin material film formed on the substrate is irradiated with UV light, the resin film is placed on a support base in a temperature range of zero degrees or less.
  • the mask is peeled from the substrate, and the resin material film on the mask is heat-treated to evaporate the resin material film.
  • every time the resin material film is formed in the film forming chamber in a reduced pressure atmosphere all the resin material film covering the mask is removed from the mask. For this reason, a resin film is not formed on the mask even after UV irradiation.
  • an aspect of the present invention provides a method for forming a resin film that can reduce costs and simplify operations in forming a resin film using a mask.
  • a film forming apparatus for a resin film including: a support portion for the substrate containing a temperature control device for maintaining the substrate in a temperature band of zero degrees or less when forming the resin material film in a reduced pressure atmosphere; A mechanism for peeling off the mask from the substrate placed on the support portion and heat-treating the resin material film on the mask before irradiating the material film with UV light. Yes.
  • the resin material film covering the mask can be removed from the mask. Therefore, according to the present invention, it is basically unnecessary to remove the mask from the inside of the resin film forming apparatus to the outside and perform a wet etching process or the like.
  • the resin film deposition apparatus provides a resin film deposition apparatus that can reduce the cost and simplify the operation in forming a resin film using a mask.
  • Such a resin film is preferably used for, for example, a sealing film of an organic EL display or a flexible display.
  • FIG. 1 it is sectional drawing which shows the state which has arrange
  • FIG. 7 it is sectional drawing before arrange
  • FIG. 1 is a flowchart showing a process for producing an acrylic resin film according to an embodiment of the present invention, and the method for forming an acrylic resin film is composed of eight processes SB1 to SB8.
  • Steps SB1 to SB2 are operations related to substrate pretreatment and substrate movement.
  • steps SB3 to SB7 the metal mask is placed on the substrate before the acrylic material film is formed, the acrylic material film is formed, the metal mask is peeled off the substrate, only the metal mask is heated (the acrylic material on the metal mask is evaporated),
  • Each of the operations of forming an acrylic resin film by irradiating the acrylic material film on the substrate with UV is performed in a film forming chamber (depressurized atmosphere).
  • Step SB8 is to move the substrate out of the deposition chamber.
  • the wet for removing the acrylic resin attached to the mask by removing the mask from the inside to the outside of the film forming apparatus of the acrylic resin film which is essential in the conventional manufacturing method. There is no need to perform an etching process or the like. For this reason, in the formation of the acrylic resin film using the mask, it is possible to reduce the cost and simplify the operation.
  • FIG. 2 is a cross-sectional view showing a state in which the metal mask MB used in the embodiment of the present invention is arranged on the substrate S.
  • FIG. 3 is a cross-sectional view showing a state in which the acrylic material film f is formed on the substrate S through the metal mask MB.
  • FIG. 4 is a cross-sectional view showing a state where the metal mask MB is peeled from the substrate S after the acrylic material film f is formed and before UV irradiation.
  • FIG. 5 is a cross-sectional view showing a state in which after the acrylic material film f2 on the mask MB is evaporated, the acrylic material film f1 on the substrate S is irradiated with UV to cure the acrylic material film f1 and form an acrylic resin film F1. It is.
  • the mask body of the metal mask MB is made of a metal material such as Invar material or stainless steel, for example.
  • the vaporized acrylic material is supplied to the substrate S through a predetermined opening W provided in the mask main body, and condensed on the substrate S, so that the acrylic material film f is formed on the substrate S.
  • the acrylic resin film is not formed on the substrate S in the region where the mask main body exists at the time of film formation, and the acrylic resin is formed on the substrate S in the region where the opening W exists. A film is formed.
  • the substrate S is formed with a light emitting element and a protective film made of an inorganic material or the like.
  • This series of operations is substrate pretreatment (step SB1).
  • the substrate that has been subjected to the pretreatment is moved into a film formation chamber in which the metal mask MB is disposed in advance (step SB2).
  • the film formation chamber in which the substrate has moved is made into a reduced pressure atmosphere by a vacuum exhaust device.
  • the substrate S is placed on a support base in a temperature zone below the condensing temperature of the resin material, for example, below zero degrees, and then a metal mask MB is disposed so as to contact the film formation surface of the substrate.
  • Step SB3 The vaporized acrylic material is supplied through the metal mask MB, condensed on the substrate S, and an acrylic material film f is formed on the substrate S (step SB4).
  • Step SB3 and step SB4 are step ⁇ and are performed in a film formation chamber (depressurized atmosphere).
  • the temperature range below zero degrees is a numerical value determined by the vaporization temperature of the acrylic material used.
  • the temperature is preferably zero degrees (0 ° C.) or less, for example, in the range of about ⁇ 30 ° C. to 0 ° C.
  • step SB5 the metal mask MB after the formation of the acrylic material film f is peeled from the substrate S in the direction of the arrow (step SB5).
  • the metal mask MB is in a state where the acrylic material film f2 is attached so as to cover the upper surface thereof. Since the UV light is not irradiated, the acrylic material film f2 covering the upper surface of the metal mask MB is in an uncured state.
  • step ⁇ which is performed in the deposition chamber (depressurized atmosphere).
  • Step ⁇ This heating is performed by a mechanism for heat-treating the acrylic material film f2 on the metal mask MB.
  • the mechanism for heat-treating the acrylic material film f2 is any one or a combination of a heating device for increasing the temperature of the metal mask MB and a moving device for separating the metal mask MB from the support base. Are preferably used.
  • Examples of the heating device that promotes the temperature increase (temperature increase) of the metal mask MB include a heater that directly contacts the metal mask MB, a lamp that indirectly irradiates the metal mask MB, and the like.
  • the heating device there is an advantage that the amount of heat applied per unit time can be freely controlled with respect to the acrylic material film f2 (f) covering the metal mask MB.
  • the heating device for example, by adopting a temperature increase profile corresponding to the evaporation temperature of the substance constituting the acrylic material film f, the acrylic material film f2 covering the metal mask MB undergoes a phase transition from liquid to gas. Therefore, the acrylic material film f2 is removed from the metal mask MB. At that time, the acrylic material film f1 remaining on the substrate S is not affected at all.
  • Examples of the moving device that separates the metal mask MB from the support base include lifting pins, robot hands, and suction device means that can operate in a reduced pressure atmosphere.
  • the substrate S during the formation of the acrylic material film f is in a state of being placed on a support base in a temperature zone of zero degrees or less, the acrylic material film formed on the substrate S The temperature of f is also maintained in a temperature range of zero degrees or less.
  • the substance constituting the acrylic material film for example, a substance that evaporates at a temperature of zero degrees or higher is employed.
  • the acrylic material film f2 covering the metal mask MB undergoes a phase transition from a liquid to a gas only by separating the metal mask MB from the support base, so that the acrylic material film f2 is removed from the metal mask MB.
  • the acrylic film F1 remaining on the substrate S is not affected at all.
  • the chamber of the film forming apparatus and the shower plate disposed facing the substrate S are heated so that the acrylic material does not adhere.
  • the metal mask MB is heated by the radiant heat from the surrounding chambers and shower plates only by separating from the substrate S being cooled.
  • the “mechanism for heat-treating the acrylic material film f2” in the embodiment of the present invention is a mechanism for evaporating a substance constituting the acrylic material film.
  • the acrylic material film f2 covering the metal mask MB can be easily removed from the metal mask MB in the film forming chamber (depressurized atmosphere).
  • the above is the process ⁇ and is performed in the film formation chamber (depressurized atmosphere). Therefore, the metal mask MB from which the acrylic material film f2 has been removed can be placed on a new substrate in the next film formation batch without being taken out of the film formation chamber, and can be used for forming a new acrylic film. Become.
  • step ⁇ the acrylic material film f1 (f) remaining on the substrate S is irradiated with UV light, and the acrylic material film f1 is cured to form an acrylic resin film F.
  • Step SB7 This step is performed in a deposition chamber (reduced pressure atmosphere).
  • the acrylic material film f2 that previously covered the metal mask MB peeled off from the substrate S has evaporated from the metal mask MB in the above-described step ⁇ , and the metal mask is subjected to the step ⁇ .
  • the acrylic material film f2 does not exist on the MB. Therefore, an acrylic resin film is not formed on the metal mask MB.
  • FIG. 12 shows a liquid resin material film formed on a substrate S by supplying the resin material to the substrate S by using the metal mask MB according to the embodiment of the present invention described above, and the resin material film is polymerized.
  • 1 is a configuration example of a film forming apparatus 100 for forming a resin film.
  • the film forming apparatus 100 includes a chamber 110 whose internal space can be decompressed, and a vaporizer 300 that supplies the vaporized resin material to the chamber 110 (processing chamber).
  • the internal space of the chamber 110 is composed of an upper space 107 and a lower space 108 as will be described later.
  • An unillustrated evacuation device (evacuation means, vacuum pump, etc.) is connected to the chamber 110, and the evacuation device can evacuate the gas in the internal space so that the internal space of the chamber 110 becomes a vacuum atmosphere. It is configured.
  • a shower plate 105 is arranged in the internal space of the chamber 110, and an upper space 107 is formed above the shower plate 105 in the chamber 110.
  • a top plate 120 made of a material capable of transmitting ultraviolet light is provided at the top of the chamber 110, and an ultraviolet light irradiation device 122 (UV irradiation device) is disposed above the top plate 120.
  • the shower plate 105 is also formed of a member that can transmit ultraviolet light, so that the ultraviolet light that has passed through the top plate 120 from the irradiation device 122 and introduced into the upper space 107 further passes through the shower plate 105, It becomes possible to proceed to the lower space 108 located below the shower plate 105.
  • an acrylic material film formed on the substrate S which will be described later, is irradiated with ultraviolet light after film formation, the acrylic material film (resin material film) is cured, and an acrylic resin film (resin film) is formed. It is possible.
  • the vaporized resin material adheres to the substrate S through the opening (not shown) of the metal mask MA disposed on the film formation surface of the substrate S.
  • the temperature of the substrate S is controlled to be equal to or lower than the condensation temperature of the resin material by the cooling device 102a built in the stage 102 on which the substrate S is placed. Therefore, a condensed liquid acrylic material film can be formed on the substrate S. Therefore, in the manufacturing apparatus 100 according to an embodiment of the present invention, it is preferable that the stage 102 that is a support base on which the substrate S is placed hold the substrate S in a temperature range of zero degrees or less.
  • the film forming apparatus 100 shown in FIG. 12 is an example of an embodiment of the present invention.
  • Other configurations may be adopted as long as the stage 102 that is a support table on which the substrate S is placed incorporates a cooling device 102a that is a temperature control device that cools and holds the substrate S.
  • a cooling device 102a that is a temperature control device that cools and holds the substrate S.
  • the shower plate 105 it is not necessary to arrange the shower plate 105 in the internal space of the chamber 110.
  • the chamber 110 is provided with a heating device (not shown).
  • the temperature of the inner wall surface of the chamber 110 constituting the upper space 107 and the lower space 108 can be set to be equal to or higher than the dew point temperature of the resin material, preferably about 40 to 250 ° C., and is controlled by a heating device.
  • stage 102 substrate holding part on which the substrate S on which the acrylic resin film is formed is placed.
  • stage 102 the position where the substrate is to be placed on the surface is predetermined.
  • the stage 102 is disposed in the chamber 110 with its surface exposed.
  • Reference numeral S denotes a substrate disposed at a predetermined position on the surface of the substrate stage 102.
  • the stage 102 is provided with a substrate cooling device 102a for cooling the substrate S.
  • the substrate cooling device 102 a supplies a coolant into the stage 102 to cool the substrate S on the upper surface of the stage 102.
  • the temperature of the substrate S is controlled by a cooling device 102a built in the stage 102 (substrate holding unit) on which the substrate S is placed, and is equal to or lower than the vaporization temperature of the resin material, preferably zero degrees (0 ° C.) or less.
  • the temperature is controlled to about ⁇ 30 ° C. to 0 ° C.
  • a shower plate 105 is provided on the upper surface of the stage 102 with respect to the entire surface of the stage 102.
  • the shower plate 105 is composed of a plate-like member made of an ultraviolet light transmitting material such as quartz provided with a large number of through holes, and divides the internal space of the chamber 110 into an upper space and a lower space.
  • a mask (not shown) is provided in the lower space 108, and the position of this mask can be set to a predetermined position during film formation.
  • the lower space 108 is provided with a mask raising / lowering mechanism (not shown).
  • the upper space 107 of the chamber 110 communicates with the vaporizer 300 via a pipe 112 (resin material supply pipe) and a valve 112V.
  • the vaporized resin material can be supplied to the upper space 107 of the chamber 110 through the resin material supply pipe 112.
  • One end of a resin material bypass pipe 113 (second pipe) having a valve 113V is connected to a position closer to the vaporizer 300 than the valve 112V of the resin material supply pipe 112 (first pipe).
  • the other end of the resin material bypass pipe 113 (second pipe) is connected to the outside through an exhaust pipe 114, and gas can be exhausted through the resin material bypass pipe 113.
  • the opening / closing drive of the valve 112V and the valve 113V is controlled by the control unit 400.
  • the control unit 400 has a film forming state in which the vaporized resin material from the vaporizer 300 is supplied into the chamber 110, and a non-generated state in which the vaporized resin material from the vaporizer 300 is exhausted to the outside and not supplied into the chamber 110.
  • the film state is controlled to be switchable.
  • the valve 112V, the valve 113V, and the control unit 400 constitute a switching unit having a selection function of supplying a resin material into the chamber 110 or exhausting the resin material to the outside of the chamber 110.
  • the vaporizer 300 can supply the vaporized resin material to the chamber 110. As illustrated in FIG. 12, the vaporizer 300 includes a vaporization tank 130, a discharge unit 132, and a resin material raw material container 150.
  • the vaporization tank 130 has an internal space for vaporizing the liquid resin material, and a discharge part 132 for spraying the liquid resin material is disposed above the internal space.
  • the vaporization tank 130 is formed in a substantially cylindrical shape, but may have other cross-sectional shapes.
  • the inner surface of the vaporization tank 130 can be made of, for example, SUS or aluminum.
  • a resin material liquid supply pipe 140 connected to the resin material raw material container 150 via a valve 140V and a carrier gas supply pipe 130G for supplying a carrier gas such as nitrogen gas.
  • the other end of the resin material liquid supply pipe 140 is connected to the resin material raw material container 150 and is located inside the liquid resin material stored in the resin material raw material container 150.
  • a pressurized gas supply pipe 150G for supplying a material liquid such as nitrogen gas is connected to the resin material raw material container 150, and the liquid resin material pressurized by increasing the internal pressure of the resin material raw material container 150 is a resin.
  • the liquid can be supplied to the material liquid supply pipe 140.
  • the discharge unit 132 is configured to spray the liquid resin material supplied from the resin material liquid supply pipe 140 into the internal space of the vaporization tank 130 together with the carrier gas.
  • the discharge part 132 is provided in the approximate center position of the top part of the vaporization tank 130.
  • the vaporizing tank 130 is provided with a heating unit 135 at a lower position of the vaporizing tank 130.
  • the heating unit 135 is arranged so as to divide the internal space into an upper space and a lower space, a vaporization space is formed above the heating unit 135, and a storage unit is formed below.
  • the heating unit 135 is provided below the discharge unit 132 and heats and vaporizes the liquid resin material sprayed from the discharge unit 132.
  • the internal pressure of the resin material raw material container 150 is increased, and the liquid resin material supplied from the resin material liquid supply pipe 140 is sprayed from the discharge unit 132 to the internal space of the vaporization tank 130 together with the carrier gas. At this time, the resin material and the carrier gas supplied to the discharge unit 132 can be further heated.
  • the resin material sprayed into the internal space of the vaporizing tank 130 together with the carrier gas from the discharge unit 132 is vaporized inside the heated vaporizing tank 130.
  • the control unit 400 opens the valve 112V so that gas can flow into the chamber 110 and closes the valve 113V. Then, the resin material bypass pipe 113 (second pipe) is in a state where gas cannot flow in. Thereby, the vaporized resin material is supplied to the chamber 110, and the film formation process can be performed.
  • the film forming apparatus 100 performs, for example, film formation of a resin material that is an ultraviolet curable acrylic resin having a vaporization temperature of about 40 ° C. to 250 ° C., and ultraviolet irradiation for curing the formed resin material. It is configured to be possible in the same chamber 110. Thereby, it becomes possible to perform any processing process with the same apparatus structure, and it can improve productivity.
  • a resin material that is an ultraviolet curable acrylic resin having a vaporization temperature of about 40 ° C. to 250 ° C.
  • the present invention can be widely applied to a method for forming a resin film and a manufacturing apparatus having a configuration effective in forming a resin.
  • the present invention is suitably used, for example, when a resin film is produced as a sealing film for an organic EL display or a flexible display.

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Abstract

This resin film formation method uses a mask with the mask main body formed from a metal material and having prescribed openings and forms a resin film on a substrate in a reduced pressure atmosphere, and involves: a first step in which a mask is provided contacting a substrate arranged on a cooled support base in a reduced pressure atmosphere, a gasified resin material is supplied through said mask and condensed on the substrate to form a liquid resin material film on the substrate; a second step in which the mask is separated from the substrate; a third step in which the resin material film on the mask is heat treated and said resin material film is evaporated; and a fourth step in which the resin material film remaining on the substrate is irradiated with UV light and the resin material film is cured to form the resin film.

Description

樹脂膜の形成方法および樹脂膜の成膜装置Resin film forming method and resin film forming apparatus
　本発明は、減圧雰囲気において、マスク上に形成された樹脂材料膜を容易に除去できる、樹脂膜の形成方法および樹脂膜の成膜装置に関する。
　本願は、２０１７年２月２１日に日本に出願された特願２０１７－０３０３２１号に基づき優先権を主張し、その内容をここに援用する。 The present invention relates to a resin film forming method and a resin film forming apparatus capable of easily removing a resin material film formed on a mask in a reduced pressure atmosphere.
This application claims priority based on Japanese Patent Application No. 2017-030321 for which it applied to Japan on February 21, 2017, and uses the content here.
　高分子有機物からなる樹脂膜の製法としては、蒸着重合法や紫外線硬化法が広く用いられている。この２つの製法は何れも、減圧された処理槽内に低分子の有機物ガスを導入し、被処理体上に供給された樹脂材料が重合反応を起し、高分子の樹脂膜を被処理体の表面上に形成する方法であり、被処理体の表面に対する樹脂膜のカバレッジ（被覆率）が良いという特長がある。特許文献１には、これに適した成膜装置が開示されている。 As a method for producing a resin film made of a polymer organic material, a vapor deposition polymerization method or an ultraviolet curing method is widely used. In each of these two manufacturing methods, a low molecular organic gas is introduced into a decompressed treatment tank, the resin material supplied onto the object to be polymerized undergoes a polymerization reaction, and a polymer resin film is formed on the object to be processed. The method has a feature that the coverage (coverage) of the resin film on the surface of the object to be processed is good. Patent Document 1 discloses a film forming apparatus suitable for this.
　図７は、従来の樹脂膜の形成方法を示すフローチャートであり、メタルマスクＭＹを用いて樹脂膜の代表例としてアクリル樹脂膜Ｆを形成する場合を示す。
　まず、基板Ｓに対して無機保護膜形成などの前処理を施した後、成膜室内へ基板Ｓを移動する（ＳＹ１、ＳＹ２）。 FIG. 7 is a flowchart showing a conventional method for forming a resin film, and shows a case where an acrylic resin film F is formed as a representative example of a resin film using a metal mask MY.
First, after pre-processing such as formation of an inorganic protective film is performed on the substrate S, the substrate S is moved into the deposition chamber (SY1, SY2).
　成膜室内（減圧雰囲気）において、図８～図１１に示すように、所望の開口部を設けたメタルマスクＭＹを基板Ｓの被成膜面上に配置する（ＳＹ３）。これにより、開口部の位置にある基板Ｓの被成膜面は、図８に示すように、露呈された状態となる。
　次に、図９に示すように、メタルマスクＭＹを介して、樹脂材料膜の代表例としてアクリル材料膜ｆを基板Ｓの上に形成する（ＳＹ４）。アクリル材料膜ｆは、基板Ｓを被覆する部位ｆ１と、メタルマスクＭＹを被覆する部位ｆ２と、から構成される。 In the film forming chamber (depressurized atmosphere), as shown in FIGS. 8 to 11, a metal mask MY provided with a desired opening is placed on the film forming surface of the substrate S (SY3). As a result, the deposition surface of the substrate S at the position of the opening is exposed as shown in FIG.
Next, as shown in FIG. 9, an acrylic material film f as a representative example of the resin material film is formed on the substrate S through the metal mask MY (SY4). The acrylic material film f includes a portion f1 that covers the substrate S and a portion f2 that covers the metal mask MY.
　次いで、図１０に示すように、アクリル材料膜ｆに紫外線（ＵＶ）を照射して、アクリル材料膜ｆを硬化してアクリル樹脂膜Ｆを形成する（ＳＹ５）。その後、図１１に示すように、メタルマスクＭＹを矢印の方向へ移動させることにより、メタルマスクＭＹを基板Ｓから剥離する（ＳＹ６）。メタルマスクＭＹは、一回の成膜後、もしくは、基板を入れ替えて複数回使用された（複数回の成膜が行われた）後、クリーニングされて、再使用される。 Next, as shown in FIG. 10, the acrylic material film f is irradiated with ultraviolet rays (UV) to cure the acrylic material film f to form an acrylic resin film F (SY5). Then, as shown in FIG. 11, the metal mask MY is peeled from the substrate S by moving the metal mask MY in the direction of the arrow (SY6). The metal mask MY is cleaned and reused after a single film formation or after being used a plurality of times by changing the substrate (a plurality of film formations are performed).
　従来、メタルマスクＭＹ上に堆積されたアクリル樹脂膜Ｆの除去は、アクリル樹脂膜の成膜装置の内部から外部へメタルマスクＭＹを取り外して、ウェットエッチング処理を行う方法により行われていた。したがって、減圧雰囲気にある成膜装置の内部において、マスク上に形成されたアクリル樹脂膜を容易に除去できる、アクリル樹脂膜の形成方法およびアクリル樹脂膜の成膜装置の開発が期待されていた。 Conventionally, the removal of the acrylic resin film F deposited on the metal mask MY has been performed by a method of removing the metal mask MY from the inside of the acrylic resin film forming apparatus to the outside and performing a wet etching process. Therefore, development of an acrylic resin film forming method and an acrylic resin film forming apparatus that can easily remove the acrylic resin film formed on the mask inside the film forming apparatus in a reduced pressure atmosphere has been expected.
日本国特許第４１１２７０２号公報Japanese Patent No. 4112702
　本発明は、上述した事情に鑑みてなされたもので、メタルマスクに樹脂膜が形成されず、メタルマスクを成膜装置から取り出してクリーニングせずに繰り返し使用できる、樹脂膜の形成方法および樹脂膜の成膜装置を提供することを目的とする。減圧雰囲気にある成膜装置の内部において、マスク上に樹脂膜が形成されない樹脂膜の形成方法および樹脂膜の成膜装置を提供することを目的とする。 The present invention has been made in view of the circumstances described above, and a resin film is not formed on the metal mask, and the resin film forming method and the resin film can be repeatedly used without removing the metal mask from the film forming apparatus and cleaning it. An object of the present invention is to provide a film forming apparatus. It is an object of the present invention to provide a resin film forming method and a resin film forming apparatus in which a resin film is not formed on a mask inside a film forming apparatus in a reduced pressure atmosphere.
　本発明の第１態様に係る樹脂膜の形成方法は、マスク本体が金属材料からなり所定の開口部を備えたマスクを用い、減圧雰囲気において、基板上に樹脂膜を形成する方法であって、減圧雰囲気において、冷却された支持台に載置された前記基板（被成膜面）と接するように前記マスクを設けて、該マスクを介して気化した樹脂材料を供給し該基板上で凝縮させ、該基板上に液体の樹脂材料膜を形成する第１工程（工程α）と、前記基板から前記マスクを剥離する第２工程（工程β）と、前記マスク上の樹脂材料膜を熱処理し、該樹脂材料膜を蒸発する第３工程（工程γ）と、前記基板上に残存した樹脂材料膜にＵＶ光を照射し、該樹脂材料膜を硬化して樹脂膜を形成する第４工程（工程δ）と、を順に備える。
　本発明の第１態様に係る樹脂膜の形成方法においては、前記第３工程における熱処理は、加熱装置を用いた前記マスクに対する加熱昇温であってもよい。
　本発明の第１態様に係る樹脂膜の形成方法においては、前記第３工程における熱処理は、前記マスクが前記支持台から離れたことによる自然昇温によって行われてもよい。
　本発明の第１態様に係る樹脂膜の形成方法においては、前記第３工程における熱処理においては、前記マスクが前記支持台から離され、加熱されたチャンバもしくはシャワープレートからの輻射熱により加熱されてもよい。 The method for forming a resin film according to the first aspect of the present invention is a method for forming a resin film on a substrate in a reduced-pressure atmosphere using a mask having a mask body made of a metal material and having a predetermined opening. In a reduced-pressure atmosphere, the mask is provided so as to be in contact with the substrate (film formation surface) placed on a cooled support table, and the vaporized resin material is supplied through the mask to be condensed on the substrate. A first step of forming a liquid resin material film on the substrate (step α), a second step of peeling the mask from the substrate (step β), and heat treating the resin material film on the mask, A third step (step γ) for evaporating the resin material film, and a fourth step (step) for irradiating the resin material film remaining on the substrate with UV light and curing the resin material film to form a resin film. δ) in order.
In the method for forming a resin film according to the first aspect of the present invention, the heat treatment in the third step may be a heating temperature increase for the mask using a heating device.
In the method for forming a resin film according to the first aspect of the present invention, the heat treatment in the third step may be performed by natural temperature increase due to the mask being separated from the support base.
In the method for forming a resin film according to the first aspect of the present invention, in the heat treatment in the third step, the mask is separated from the support base and heated by radiant heat from a heated chamber or shower plate. Good.
　本発明の第２態様に係る樹脂膜の成膜装置は、マスク本体が金属材料からなり所定の開口部を備えたマスクを用い、減圧雰囲気において、基板上に樹脂膜を形成する装置であって、樹脂膜の材料である気化した樹脂材料を基板上に供給し、凝縮させて樹脂材料膜を形成する時に、前記基板を零度以下の温度帯域に保つ温度制御装置を内蔵する該基板の支持部と、前記樹脂材料膜に対してＵＶ光を照射する前に、前記支持部に載置された状態にある該基板から前記マスクを剥離して、該マスク上の樹脂材料膜を熱処理する機構と、前記樹脂材料膜にＵＶ光を照射して硬化させ、樹脂膜を形成するＵＶ照射装置と、を備える。
　本発明の第２態様に係る樹脂膜の成膜装置においては、前記樹脂材料膜を熱処理する機構が、前記マスクの温度増加を促す加熱装置であってもよい。
　本発明の第２態様に係る樹脂膜の成膜装置においては、前記樹脂材料膜を熱処理する機構が、前記マスクを支持台から離間させる移動装置であってもよい。
　本発明の第２態様に係る樹脂膜の成膜装置においては、前記樹脂材料膜を熱処理する機構が、前記基板を収容するチャンバの加熱装置であってもよい。 A resin film forming apparatus according to a second aspect of the present invention is an apparatus for forming a resin film on a substrate in a reduced-pressure atmosphere using a mask having a mask body made of a metal material and having a predetermined opening. The substrate supporting part includes a temperature control device for supplying the vaporized resin material, which is the material of the resin film, onto the substrate and condensing it to form the resin material film, which keeps the substrate in a temperature band of zero degrees or less. And, before irradiating the resin material film with UV light, a mechanism for peeling the mask from the substrate placed on the support and heat-treating the resin material film on the mask And a UV irradiation device that forms a resin film by irradiating the resin material film with UV light.
In the resin film deposition apparatus according to the second aspect of the present invention, the mechanism for heat-treating the resin material film may be a heating apparatus that promotes an increase in the temperature of the mask.
In the resin film forming apparatus according to the second aspect of the present invention, the mechanism for heat-treating the resin material film may be a moving device for separating the mask from a support base.
In the resin film deposition apparatus according to the second aspect of the present invention, the mechanism for heat-treating the resin material film may be a chamber heating apparatus for housing the substrate.
　本発明の態様に係る樹脂膜の形成方法は、第３工程において、基板上に形成した樹脂材料膜にＵＶ光を照射する前に、零度以下の温度帯域にある支持台に載置された状態にある該基板から前記マスクを剥離して、該マスク上の樹脂材料膜を熱処理し、該樹脂材料膜を蒸発する。これにより、減圧雰囲気にある成膜室内にて、樹脂材料膜を形成する毎に、マスク上を覆う樹脂材料膜は全てマスクから除去される。このため、その後、ＵＶ照射してもマスク上には樹脂膜は形成されない。ゆえに、樹脂膜を除去するために、従来は必須であったクリーニング作業、すなわち、樹脂膜の成膜装置の内部から外部へマスクを取り外して、ウェットエッチング処理などを行う作業は、本発明の態様によれば基本的に不要となる。
　ゆえに、本発明の態様は、マスクを用いた樹脂膜の形成において、低コスト化および作業の簡単化を図ることが可能な、樹脂膜の形成方法をもたらす。 The method for forming a resin film according to an aspect of the present invention is a state in which, in the third step, before the resin material film formed on the substrate is irradiated with UV light, the resin film is placed on a support base in a temperature range of zero degrees or less. The mask is peeled from the substrate, and the resin material film on the mask is heat-treated to evaporate the resin material film. Thus, every time the resin material film is formed in the film forming chamber in a reduced pressure atmosphere, all the resin material film covering the mask is removed from the mask. For this reason, a resin film is not formed on the mask even after UV irradiation. Therefore, in order to remove the resin film, a conventional cleaning operation, that is, an operation of removing the mask from the inside of the resin film forming apparatus to the outside and performing a wet etching process or the like is an aspect of the present invention. According to the above, it is basically unnecessary.
Therefore, an aspect of the present invention provides a method for forming a resin film that can reduce costs and simplify operations in forming a resin film using a mask.
　本発明の態様に係る樹脂膜の成膜装置は、減圧雰囲気において、樹脂材料膜の形成時に、前記基板を零度以下の温度帯域に保つ温度制御装置を内蔵する該基板の支持部と、前記樹脂材料膜に対してＵＶ光を照射する前に、前記支持部に載置された状態にある該基板から前記マスクを剥離して、該マスク上の樹脂材料膜を熱処理する機構と、を備えている。これにより、減圧雰囲気にある成膜室内にて、樹脂材料膜を形成する毎に、マスク上を覆う樹脂材料膜はマスクから除去できる。ゆえに、本発明によれば、樹脂膜の成膜装置の内部から外部へマスクを取り外して、ウェットエッチング処理などを行う作業が基本的に不要となる。
　また、本発明の成膜装置では、樹脂膜を形成する一連の作業の中で毎回、マスクから樹脂材料膜が除去されるので、次に樹脂膜を形成する際には、クリーンな状態のマスクを利用できる。
　ゆえに、本発明の態様に係る樹脂膜の成膜装置は、マスクを用いた樹脂膜の形成において、低コスト化および作業の簡単化を図ることが可能な、樹脂膜の成膜装置をもたらす。 According to an embodiment of the present invention, there is provided a film forming apparatus for a resin film, including: a support portion for the substrate containing a temperature control device for maintaining the substrate in a temperature band of zero degrees or less when forming the resin material film in a reduced pressure atmosphere; A mechanism for peeling off the mask from the substrate placed on the support portion and heat-treating the resin material film on the mask before irradiating the material film with UV light. Yes. Thus, every time the resin material film is formed in the film forming chamber in a reduced pressure atmosphere, the resin material film covering the mask can be removed from the mask. Therefore, according to the present invention, it is basically unnecessary to remove the mask from the inside of the resin film forming apparatus to the outside and perform a wet etching process or the like.
In the film forming apparatus of the present invention, since the resin material film is removed from the mask every time during a series of operations for forming the resin film, the next time the resin film is formed, the mask in a clean state is used. Can be used.
Therefore, the resin film deposition apparatus according to an aspect of the present invention provides a resin film deposition apparatus that can reduce the cost and simplify the operation in forming a resin film using a mask.
　このような樹脂膜の用途としては、例えば、有機ＥＬディスプレイやフレキシブルディスプレイの封止膜に好適に用いられる。 Such a resin film is preferably used for, for example, a sealing film of an organic EL display or a flexible display.
本発明の実施形態に係るアクリル樹脂膜の形成方法を示すフローチャートである。It is a flowchart which shows the formation method of the acrylic resin film which concerns on embodiment of this invention. 図１において、マスクを基板に配置した状態を示す断面図である。In FIG. 1, it is sectional drawing which shows the state which has arrange | positioned the mask in the board | substrate. マスクを介し基板にアクリル材料膜を形成した状態を示す断面図である。It is sectional drawing which shows the state which formed the acrylic material film | membrane on the board | substrate through the mask. ＵＶ照射前に、基板からマスクを剥離した状態を示す断面図である。It is sectional drawing which shows the state which peeled the mask from the board | substrate before UV irradiation. マスク上のアクリル材料膜を熱処理し、蒸発した状態を示す断面図である。It is sectional drawing which shows the state which heat-processed the acrylic material film | membrane on a mask, and was evaporated. 基板上のアクリル材料膜にＵＶ照射し、硬化した状態を示す断面図である。It is sectional drawing which shows the state which irradiated and UV-cured the acrylic material film | membrane on a board | substrate. 基板上のアクリル材料膜にＵＶ照射し、硬化した状態を示す断面図である。It is sectional drawing which shows the state which irradiated and UV-cured the acrylic material film | membrane on a board | substrate. 従来のアクリル樹脂膜の形成方法を示すフローチャートである。It is a flowchart which shows the formation method of the conventional acrylic resin film. 図７において、マスクを基板に配置する前の断面図である。In FIG. 7, it is sectional drawing before arrange | positioning a mask to a board | substrate. マスクを介し基板にアクリル材料膜を形成した状態を示す断面図である。It is sectional drawing which shows the state which formed the acrylic material film | membrane on the board | substrate through the mask. アクリル材料膜にＵＶ照射し、硬化した状態を示す断面図である。It is sectional drawing which shows the state which irradiated and UV-cured the acrylic material film | membrane. ＵＶ照射後、基板からマスクを剥離した状態を示す断面図である。It is sectional drawing which shows the state which peeled the mask from the board | substrate after UV irradiation. 本発明の実施形態に係るアクリル樹脂膜の成膜装置の一例を示す模式図である。It is a schematic diagram which shows an example of the film-forming apparatus of the acrylic resin film which concerns on embodiment of this invention.
　以下、本発明の一実施形態に係る樹脂膜の形成方法と、この樹脂膜の形成において有効な構成を備えたマスクを、図面に基づいて説明する。樹脂膜の一例として、アクリル樹脂を例示する。 Hereinafter, a method for forming a resin film according to an embodiment of the present invention and a mask having a configuration effective in forming the resin film will be described with reference to the drawings. An acrylic resin is illustrated as an example of the resin film.
＜アクリル樹脂膜の形成方法＞
　図１は、本発明の一実施形態に係るアクリル樹脂膜の作製工程を示すフローチャートであり、アクリル樹脂膜の形成方法は、工程ＳＢ１～工程ＳＢ８の８つの工程から構成される。
　工程ＳＢ１～工程ＳＢ２は基板の前処理と基板移動に関する作業である。工程ＳＢ３～工程ＳＢ７は、アクリル材料膜を形成する前にメタルマスクを基板に配置、アクリル材料膜の形成、メタルマスクを基板から剥離、メタルマスクのみ加熱（メタルマスク上のアクリル材料を蒸発）、基板上のアクリル材料膜にＵＶ照射してアクリル樹脂膜の形成、の各作業であり、成膜室内（減圧雰囲気）において行われる。工程ＳＢ８は成膜室外へ基板移動である。 <Method for forming acrylic resin film>
FIG. 1 is a flowchart showing a process for producing an acrylic resin film according to an embodiment of the present invention, and the method for forming an acrylic resin film is composed of eight processes SB1 to SB8.
Steps SB1 to SB2 are operations related to substrate pretreatment and substrate movement. In steps SB3 to SB7, the metal mask is placed on the substrate before the acrylic material film is formed, the acrylic material film is formed, the metal mask is peeled off the substrate, only the metal mask is heated (the acrylic material on the metal mask is evaporated), Each of the operations of forming an acrylic resin film by irradiating the acrylic material film on the substrate with UV is performed in a film forming chamber (depressurized atmosphere). Step SB8 is to move the substrate out of the deposition chamber.
　ゆえに、本発明の実施形態によれば、従来の製法においては必須であった、アクリル樹脂膜の成膜装置の内部から外部へマスクを取り外して、マスクに付着したアクリル樹脂を除去するためのウェットエッチング処理などを行う作業が不要となる。このため、マスクを用いたアクリル樹脂膜の形成において、低コスト化および作業の簡単化を図ることが可能となる。 Therefore, according to the embodiment of the present invention, the wet for removing the acrylic resin attached to the mask by removing the mask from the inside to the outside of the film forming apparatus of the acrylic resin film, which is essential in the conventional manufacturing method. There is no need to perform an etching process or the like. For this reason, in the formation of the acrylic resin film using the mask, it is possible to reduce the cost and simplify the operation.
　以下では、図１のフローチャートに示した各工程（工程ＳＢ１～工程ＳＢ８）について、図２～図６Ｂを用いて詳細に説明する。
　図２は、本発明の実施形態において用いるメタルマスクＭＢを基板Ｓに配置した状態を示す断面図である。図３は、メタルマスクＭＢを介し基板Ｓにアクリル材料膜ｆを形成した状態を示す断面図である。図４は、アクリル材料膜ｆを形成した後、ＵＶ照射前に、基板ＳからメタルマスクＭＢを剥離した状態を示す断面図である。図５は、マスクＭＢ上のアクリル材料膜ｆ２を蒸発させた後、基板Ｓ上のアクリル材料膜ｆ１にＵＶ照射し、アクリル材料膜ｆ１を硬化しアクリル樹脂膜Ｆ１を形成した状態を示す断面図である。 Hereinafter, each step (step SB1 to step SB8) shown in the flowchart of FIG. 1 will be described in detail with reference to FIGS. 2 to 6B.
FIG. 2 is a cross-sectional view showing a state in which the metal mask MB used in the embodiment of the present invention is arranged on the substrate S. FIG. 3 is a cross-sectional view showing a state in which the acrylic material film f is formed on the substrate S through the metal mask MB. FIG. 4 is a cross-sectional view showing a state where the metal mask MB is peeled from the substrate S after the acrylic material film f is formed and before UV irradiation. FIG. 5 is a cross-sectional view showing a state in which after the acrylic material film f2 on the mask MB is evaporated, the acrylic material film f1 on the substrate S is irradiated with UV to cure the acrylic material film f1 and form an acrylic resin film F1. It is.
　メタルマスクＭＢのマスク本体は、例えば、インバー材やステンレススティール等の金属材料から構成される。マスク本体に設けた所定の開口部Ｗを通して基板Ｓに気化したアクリル材料を供給し、基板Ｓ上で凝縮させることにより、基板Ｓ上にアクリル材料膜ｆを形成するために用いられる。これにより、マスクＭＢの場合は基本的に、成膜時にマスク本体が存在した領域には基板Ｓ上にアクリル樹脂膜は形成されず、開口部Ｗが存在した領域には基板Ｓ上にアクリル樹脂膜は形成される。 The mask body of the metal mask MB is made of a metal material such as Invar material or stainless steel, for example. The vaporized acrylic material is supplied to the substrate S through a predetermined opening W provided in the mask main body, and condensed on the substrate S, so that the acrylic material film f is formed on the substrate S. Thus, in the case of the mask MB, basically, the acrylic resin film is not formed on the substrate S in the region where the mask main body exists at the time of film formation, and the acrylic resin is formed on the substrate S in the region where the opening W exists. A film is formed.
　基板Ｓは、発光素子などが形成され、無機材料などの保護膜が形成される。この一連の作業が基板の前処理（工程ＳＢ１）である。次に、前処理を終えた基板を、メタルマスクＭＢが予め配置された成膜室内へ移動する（工程ＳＢ２）。 The substrate S is formed with a light emitting element and a protective film made of an inorganic material or the like. This series of operations is substrate pretreatment (step SB1). Next, the substrate that has been subjected to the pretreatment is moved into a film formation chamber in which the metal mask MB is disposed in advance (step SB2).
　基板が移動した成膜室内は、真空排気装置により減圧雰囲気にされている。この減圧雰囲気において、基板Ｓは樹脂材料の凝縮温度以下、例えば、零度以下の温度帯域にある支持台に載置された後、前記基板の被成膜面と接するようにメタルマスクＭＢを配置する（工程ＳＢ３）。このメタルマスクＭＢを介して気化したアクリル材料を供給し、基板Ｓ上で凝縮させ、該基板Ｓ上にアクリル材料膜ｆを形成する（工程ＳＢ４）。工程ＳＢ３と工程ＳＢ４が工程αであり、成膜室内（減圧雰囲気）にて行われる。ここで、零度以下の温度帯域とは、使用されるアクリル材料の気化温度によって決まる数値である。好ましくは零度（０℃）以下であり、例えば、－３０℃～０℃程度の範囲である。 The film formation chamber in which the substrate has moved is made into a reduced pressure atmosphere by a vacuum exhaust device. In this reduced-pressure atmosphere, the substrate S is placed on a support base in a temperature zone below the condensing temperature of the resin material, for example, below zero degrees, and then a metal mask MB is disposed so as to contact the film formation surface of the substrate. (Step SB3). The vaporized acrylic material is supplied through the metal mask MB, condensed on the substrate S, and an acrylic material film f is formed on the substrate S (step SB4). Step SB3 and step SB4 are step α and are performed in a film formation chamber (depressurized atmosphere). Here, the temperature range below zero degrees is a numerical value determined by the vaporization temperature of the acrylic material used. The temperature is preferably zero degrees (0 ° C.) or less, for example, in the range of about −30 ° C. to 0 ° C.
　次に、図４に示すように、アクリル材料膜ｆにＵＶ光を照射することなく、アクリル材料膜ｆの形成を終えたメタルマスクＭＢを、基板Ｓから矢印の方向に剥離する（工程ＳＢ５）。このとき、メタルマスクＭＢは、その上面を覆うようにアクリル材料膜ｆ２が付着した状態にある。ＵＶ光を照射していないので、メタルマスクＭＢの上面を覆うアクリル材料膜ｆ２は、未硬化の状態にある。これが工程βであり、成膜室内（減圧雰囲気）にて行われる。 Next, as shown in FIG. 4, without irradiating the acrylic material film f with UV light, the metal mask MB after the formation of the acrylic material film f is peeled from the substrate S in the direction of the arrow (step SB5). . At this time, the metal mask MB is in a state where the acrylic material film f2 is attached so as to cover the upper surface thereof. Since the UV light is not irradiated, the acrylic material film f2 covering the upper surface of the metal mask MB is in an uncured state. This is step β, which is performed in the deposition chamber (depressurized atmosphere).
　次に、図５に示すように、支持台及び支持台に載置された基板は加熱せず、メタルマスクＭＢのみ加熱する。ここで、「メタルマスクＭＢのみ加熱」とは、基板や基板を載置する支持台は昇温させず、メタルマスク上のアクリル材料膜ｆ２を昇温させ、該アクリル材料膜ｆ２を蒸発することを意味する（工程γ）。
　この加熱は、メタルマスクＭＢ上のアクリル材料膜ｆ２を熱処理する機構により行われる。
　本発明の実施形態において、アクリル材料膜ｆ２を熱処理する機構としては、メタルマスクＭＢの温度増加を促す加熱装置、及び、メタルマスクＭＢを支持台から離間させる移動装置、の何れか一方、若しくは組み合わせが好適に用いられる。 Next, as shown in FIG. 5, only the metal mask MB is heated without heating the support table and the substrate placed on the support table. Here, “only the metal mask MB is heated” means that the temperature of the acrylic material film f2 on the metal mask is raised and the acrylic material film f2 is evaporated without raising the temperature of the substrate or the support on which the substrate is placed. (Step γ).
This heating is performed by a mechanism for heat-treating the acrylic material film f2 on the metal mask MB.
In the embodiment of the present invention, the mechanism for heat-treating the acrylic material film f2 is any one or a combination of a heating device for increasing the temperature of the metal mask MB and a moving device for separating the metal mask MB from the support base. Are preferably used.
　前記メタルマスクＭＢの温度増加（昇温）を促す加熱装置とは、例えば、メタルマスクＭＢに直接的に接触させるヒータや、メタルマスクＭＢに間接的に照射するランプなどが挙げられる。加熱装置を用いる場合は、メタルマスクＭＢを覆うアクリル材料膜ｆ２（ｆ）に対して、単位時間当たりに加える熱量を自在に制御できる利点がある。加熱装置においては、例えば、アクリル材料膜ｆを構成する物質の蒸発温度に応じた、温度増加プロファイルを採用することにより、メタルマスクＭＢを覆うアクリル材料膜ｆ２は、液体から気体へ相転移が生じるため、メタルマスクＭＢからアクリル材料膜ｆ２が除去される。その際、基板Ｓ上に残存するアクリル材料膜ｆ１は何ら影響を受けない。メタルマスクＭＢの温度を上昇させる場合は、基板Ｓの温度に影響を与えないように、基板Ｓから離して加熱されることが好ましい。 Examples of the heating device that promotes the temperature increase (temperature increase) of the metal mask MB include a heater that directly contacts the metal mask MB, a lamp that indirectly irradiates the metal mask MB, and the like. When the heating device is used, there is an advantage that the amount of heat applied per unit time can be freely controlled with respect to the acrylic material film f2 (f) covering the metal mask MB. In the heating device, for example, by adopting a temperature increase profile corresponding to the evaporation temperature of the substance constituting the acrylic material film f, the acrylic material film f2 covering the metal mask MB undergoes a phase transition from liquid to gas. Therefore, the acrylic material film f2 is removed from the metal mask MB. At that time, the acrylic material film f1 remaining on the substrate S is not affected at all. When raising the temperature of the metal mask MB, it is preferable to heat the metal mask MB away from the substrate S so as not to affect the temperature of the substrate S.
　前記メタルマスクＭＢを支持台から離間させる移動装置とは、減圧雰囲気において稼働できる、昇降ピン、ロボットハンド、吸着装置手段などが挙げられる。本発明の実施形態においては、アクリル材料膜ｆの形成中にある基板Ｓは、零度以下の温度帯域にある支持台に載置された状態にあるため、基板Ｓ上に形成されたアクリル材料膜ｆの温度も零度以下の温度帯域に保たれる。アクリル材料膜を構成する物質としては、例えば、零度以上の温度で蒸発する物質を採用する。これにより、メタルマスクＭＢを支持台から離間させるだけで、メタルマスクＭＢを覆うアクリル材料膜ｆ２は、液体から気体へ相転移が生じるため、メタルマスクＭＢからアクリル材料膜ｆ２が除去される。その際、基板Ｓ上に残存するアクリル膜Ｆ１は何ら影響を受けない。
　特に、成膜装置のチャンバや、基板Ｓに対向して配置されるシャワープレートは、アクリル材料が付着しないように加熱されている。このため、メタルマスクＭＢは、冷却されている基板Ｓから離すだけで、周辺のチャンバやシャワープレートからの輻射熱で加熱される。 Examples of the moving device that separates the metal mask MB from the support base include lifting pins, robot hands, and suction device means that can operate in a reduced pressure atmosphere. In the embodiment of the present invention, since the substrate S during the formation of the acrylic material film f is in a state of being placed on a support base in a temperature zone of zero degrees or less, the acrylic material film formed on the substrate S The temperature of f is also maintained in a temperature range of zero degrees or less. As the substance constituting the acrylic material film, for example, a substance that evaporates at a temperature of zero degrees or higher is employed. As a result, the acrylic material film f2 covering the metal mask MB undergoes a phase transition from a liquid to a gas only by separating the metal mask MB from the support base, so that the acrylic material film f2 is removed from the metal mask MB. At that time, the acrylic film F1 remaining on the substrate S is not affected at all.
In particular, the chamber of the film forming apparatus and the shower plate disposed facing the substrate S are heated so that the acrylic material does not adhere. For this reason, the metal mask MB is heated by the radiant heat from the surrounding chambers and shower plates only by separating from the substrate S being cooled.
　つまり、本発明の実施形態における「アクリル材料膜ｆ２を熱処理する機構」は、アクリル材料膜を構成する物質を蒸発させる機構である。これにより、成膜室内（減圧雰囲気）にて、メタルマスクＭＢを覆うアクリル材料膜ｆ２を、メタルマスクＭＢから容易に除去できる。
　以上が工程γであり、成膜室内（減圧雰囲気）にて行われる。ゆえに、このアクリル材料膜ｆ２が除去されたメタルマスクＭＢは、成膜室外に取り出すことなく、次の成膜バッチにおいて新たな基板上に配置し、新たなアクリル膜の形成に供することが可能となる。 That is, the “mechanism for heat-treating the acrylic material film f2” in the embodiment of the present invention is a mechanism for evaporating a substance constituting the acrylic material film. Thereby, the acrylic material film f2 covering the metal mask MB can be easily removed from the metal mask MB in the film forming chamber (depressurized atmosphere).
The above is the process γ and is performed in the film formation chamber (depressurized atmosphere). Therefore, the metal mask MB from which the acrylic material film f2 has been removed can be placed on a new substrate in the next film formation batch without being taken out of the film formation chamber, and can be used for forming a new acrylic film. Become.
　次いで、図６Ａに示すように、工程δにおいては、基板Ｓ上に残存したアクリル材料膜ｆ１（ｆ）にＵＶ光を照射し、該アクリル材料膜ｆ１を硬化してアクリル樹脂膜Ｆを形成する（工程ＳＢ７）。この工程は、成膜室内（減圧雰囲気）にて行われる。その際に、先に基板Ｓ上から剥離したメタルマスクＭＢを覆っていたアクリル材料膜ｆ２は、前述した工程γにおいてメタルマスクＭＢ上から蒸発しており、工程δを行う際には、メタルマスクＭＢ上にはアクリル材料膜ｆ２は存在しない。ゆえに、メタルマスクＭＢ上にアクリル樹脂膜は形成されない。 Next, as shown in FIG. 6A, in step δ, the acrylic material film f1 (f) remaining on the substrate S is irradiated with UV light, and the acrylic material film f1 is cured to form an acrylic resin film F. (Step SB7). This step is performed in a deposition chamber (reduced pressure atmosphere). At this time, the acrylic material film f2 that previously covered the metal mask MB peeled off from the substrate S has evaporated from the metal mask MB in the above-described step γ, and the metal mask is subjected to the step δ. The acrylic material film f2 does not exist on the MB. Therefore, an acrylic resin film is not formed on the metal mask MB.
＜アクリル樹脂膜の成膜装置＞
　図１２は、上述した本発明の実施形態に係るメタルマスクＭＢを用い、基板Ｓに樹脂材料を供給することにより、該基板Ｓ上に液体の樹脂材料膜を形成し、樹脂材料膜を重合して樹脂膜を形成する成膜装置１００の一構成例である。以下では、樹脂材料膜の一例であるアクリル樹脂膜を成膜する場合について詳述する。
　成膜装置１００は、内部空間が減圧可能なチャンバ１１０と、気化した樹脂材料をチャンバ１１０（処理室）に供給する気化器３００と、を有する。 <Acrylic resin film deposition system>
FIG. 12 shows a liquid resin material film formed on a substrate S by supplying the resin material to the substrate S by using the metal mask MB according to the embodiment of the present invention described above, and the resin material film is polymerized. 1 is a configuration example of a film forming apparatus 100 for forming a resin film. Below, the case where the acrylic resin film which is an example of a resin material film | membrane is formed into a film is explained in full detail.
The film forming apparatus 100 includes a chamber 110 whose internal space can be decompressed, and a vaporizer 300 that supplies the vaporized resin material to the chamber 110 (processing chamber).
　チャンバ１１０の内部空間は、後述するように、上部空間１０７、下部空間１０８から構成されている。
　チャンバ１１０には、不図示の真空排気装置（真空排気手段、真空ポンプ等）が接続され、真空排気装置は、チャンバ１１０の内部空間が真空雰囲気となるように、内部空間のガスを排気できるように構成されている。 The internal space of the chamber 110 is composed of an upper space 107 and a lower space 108 as will be described later.
An unillustrated evacuation device (evacuation means, vacuum pump, etc.) is connected to the chamber 110, and the evacuation device can evacuate the gas in the internal space so that the internal space of the chamber 110 becomes a vacuum atmosphere. It is configured.
　チャンバ１１０の内部空間には、図１２に示すように、シャワープレート１０５が配されており、チャンバ１１０内においてシャワープレート１０５より上側が上部空間１０７を構成する。チャンバ１１０の最上部には、紫外光を透過可能な部材からなる天板１２０が設けられ、天板１２０の上側には紫外光の照射装置１２２（ＵＶ照射装置）が配されている。ここで、シャワープレート１０５も紫外光を透過可能な部材で形成することにより、照射装置１２２から天板１２０を通過して上部空間１０７へ導入された紫外光は、さらにシャワープレート１０５を通過し、シャワープレート１０５の下側に位置する下部空間１０８へ進行可能となる。これにより、後述する基板Ｓ上に形成されたアクリル材料膜に対して、成膜後に紫外光を照射し、アクリル材料膜（樹脂材料膜）を硬化させ、アクリル樹脂膜（樹脂膜）を形成することが可能とされている。 As shown in FIG. 12, a shower plate 105 is arranged in the internal space of the chamber 110, and an upper space 107 is formed above the shower plate 105 in the chamber 110. A top plate 120 made of a material capable of transmitting ultraviolet light is provided at the top of the chamber 110, and an ultraviolet light irradiation device 122 (UV irradiation device) is disposed above the top plate 120. Here, the shower plate 105 is also formed of a member that can transmit ultraviolet light, so that the ultraviolet light that has passed through the top plate 120 from the irradiation device 122 and introduced into the upper space 107 further passes through the shower plate 105, It becomes possible to proceed to the lower space 108 located below the shower plate 105. As a result, an acrylic material film formed on the substrate S, which will be described later, is irradiated with ultraviolet light after film formation, the acrylic material film (resin material film) is cured, and an acrylic resin film (resin film) is formed. It is possible.
　基板Ｓの被成膜面上に配置されたメタルマスクＭＡの開口部（不図示）を通じて、気化された樹脂材料が基板Ｓに付着する。その際、本発明の一実施形態に係る製造装置においては、基板Ｓの温度が、基板Ｓを載置するステージ１０２に内蔵された冷却装置１０２ａにより、樹脂材料の凝縮温度以下に制御されているので、凝縮した液体のアクリル材料膜が基板Ｓ上に形成可能とされている。
　ゆえに、本発明の一実施形態に係る製造装置１００においては、基板Ｓを載置する支持台であるステージ１０２が、基板Ｓを零度以下の温度帯域に保持することが好ましい。 The vaporized resin material adheres to the substrate S through the opening (not shown) of the metal mask MA disposed on the film formation surface of the substrate S. At that time, in the manufacturing apparatus according to an embodiment of the present invention, the temperature of the substrate S is controlled to be equal to or lower than the condensation temperature of the resin material by the cooling device 102a built in the stage 102 on which the substrate S is placed. Therefore, a condensed liquid acrylic material film can be formed on the substrate S.
Therefore, in the manufacturing apparatus 100 according to an embodiment of the present invention, it is preferable that the stage 102 that is a support base on which the substrate S is placed hold the substrate S in a temperature range of zero degrees or less.
　なお、図１２に示した成膜装置１００は、本発明の実施形態の一例である。基板Ｓを載置する支持台であるステージ１０２が、基板Ｓを冷却保持する、温度制御装置である冷却装置１０２ａを内蔵していれば、他の構成が採用されてもよい。
　例えば、気化された樹脂材料が基板Ｓに向けて面内均一に拡散可能とされているならば、チャンバ１１０の内部空間にシャワープレート１０５を配置する必要はない。 Note that the film forming apparatus 100 shown in FIG. 12 is an example of an embodiment of the present invention. Other configurations may be adopted as long as the stage 102 that is a support table on which the substrate S is placed incorporates a cooling device 102a that is a temperature control device that cools and holds the substrate S.
For example, if the vaporized resin material can be uniformly diffused in the plane toward the substrate S, it is not necessary to arrange the shower plate 105 in the internal space of the chamber 110.
　チャンバ１１０には、不図示の加熱装置が配されている。上部空間１０７及び下部空間１０８を構成するチャンバ１１０の内壁面の温度は、樹脂材料の露点温度以上、好ましくは４０～２５０℃程度となるように設定可能であり、加熱装置によって制御される。 The chamber 110 is provided with a heating device (not shown). The temperature of the inner wall surface of the chamber 110 constituting the upper space 107 and the lower space 108 can be set to be equal to or higher than the dew point temperature of the resin material, preferably about 40 to 250 ° C., and is controlled by a heating device.
　チャンバ１１０内においてシャワープレート１０５より下側に位置する下部空間１０８には、アクリル樹脂膜が形成される基板Ｓを載置するステージ１０２（基板保持部）が配されている。 In the lower space 108 located below the shower plate 105 in the chamber 110, a stage 102 (substrate holding part) on which the substrate S on which the acrylic resin film is formed is placed.
　ステージ１０２においては、表面に基板が配置されるべき位置が予め定められている。ステージ１０２は、その表面が露出された状態で、チャンバ１１０内に配置されている。符号Ｓは基板ステージ１０２の表面の所定位置に配置された基板を示している。ステージ１０２には、基板Ｓを冷却する基板冷却装置１０２ａが設けられる。 In stage 102, the position where the substrate is to be placed on the surface is predetermined. The stage 102 is disposed in the chamber 110 with its surface exposed. Reference numeral S denotes a substrate disposed at a predetermined position on the surface of the substrate stage 102. The stage 102 is provided with a substrate cooling device 102a for cooling the substrate S.
　基板冷却装置１０２ａは、ステージ１０２内部に冷媒を供給してステージ１０２上面の基板Ｓを冷却する。具体的には、基板Ｓの温度が基板Ｓを載置するステージ１０２（基板保持部）に内蔵された冷却装置１０２ａにより制御され、樹脂材料の気化温度以下、好ましくは零度（０℃）以下、例えば、－３０℃～０℃程度に制御される。 The substrate cooling device 102 a supplies a coolant into the stage 102 to cool the substrate S on the upper surface of the stage 102. Specifically, the temperature of the substrate S is controlled by a cooling device 102a built in the stage 102 (substrate holding unit) on which the substrate S is placed, and is equal to or lower than the vaporization temperature of the resin material, preferably zero degrees (0 ° C.) or less. For example, the temperature is controlled to about −30 ° C. to 0 ° C.
　ステージ１０２の上側位置には、ステージ１０２の全面に対してシャワープレート１０５が設けられる。シャワープレート１０５は、多数の貫通孔の設けられた石英等の紫外線透過材料からなる板状部材で構成され、チャンバ１１０の内部空間を上空間と下空間とに分割している。 A shower plate 105 is provided on the upper surface of the stage 102 with respect to the entire surface of the stage 102. The shower plate 105 is composed of a plate-like member made of an ultraviolet light transmitting material such as quartz provided with a large number of through holes, and divides the internal space of the chamber 110 into an upper space and a lower space.
　下部空間１０８には、図示しないマスクが設けられ、このマスクの位置は、成膜時において所定の位置に設定可能である。下部空間１０８には、図示しないマスクの昇降機構が設けられる。 A mask (not shown) is provided in the lower space 108, and the position of this mask can be set to a predetermined position during film formation. The lower space 108 is provided with a mask raising / lowering mechanism (not shown).
　チャンバ１１０の上部空間１０７は、配管１１２（樹脂材料供給管）およびバルブ１１２Ｖを介して気化器３００と連通している。この樹脂材料供給管１１２を介してチャンバ１１０の上部空間１０７に対して、気化された樹脂材料は供給可能である。 The upper space 107 of the chamber 110 communicates with the vaporizer 300 via a pipe 112 (resin material supply pipe) and a valve 112V. The vaporized resin material can be supplied to the upper space 107 of the chamber 110 through the resin material supply pipe 112.
　樹脂材料供給管１１２（第一配管）のバルブ１１２Ｖよりも気化器３００に近い位置には、バルブ１１３Ｖを有する樹脂材料迂回管１１３（第二配管）の一端が接続されている。樹脂材料迂回管１１３（第二配管）の他端は、排気管１１４を介して外部に接続されており、樹脂材料迂回管１１３を通じてガスが排気可能である。 One end of a resin material bypass pipe 113 (second pipe) having a valve 113V is connected to a position closer to the vaporizer 300 than the valve 112V of the resin material supply pipe 112 (first pipe). The other end of the resin material bypass pipe 113 (second pipe) is connected to the outside through an exhaust pipe 114, and gas can be exhausted through the resin material bypass pipe 113.
　バルブ１１２Ｖおよびバルブ１１３Ｖの開閉駆動は、制御部４００によって制御される。制御部４００は、気化器３００からの気化した樹脂材料をチャンバ１１０内へ供給する成膜状態と、気化器３００からの気化した樹脂材料を外部に排気してチャンバ１１０内への供給しない非成膜状態と、を切り替え可能に制御する。 The opening / closing drive of the valve 112V and the valve 113V is controlled by the control unit 400. The control unit 400 has a film forming state in which the vaporized resin material from the vaporizer 300 is supplied into the chamber 110, and a non-generated state in which the vaporized resin material from the vaporizer 300 is exhausted to the outside and not supplied into the chamber 110. The film state is controlled to be switchable.
　バルブ１１２Ｖ、バルブ１１３Ｖ、及び制御部４００は、チャンバ１１０の内部に樹脂材料を供給する、或いは、チャンバ１１０の外部に樹脂材料を排気する選択機能を有する切替部を構成している。 The valve 112V, the valve 113V, and the control unit 400 constitute a switching unit having a selection function of supplying a resin material into the chamber 110 or exhausting the resin material to the outside of the chamber 110.
　気化器３００は、チャンバ１１０に対して気化された樹脂材料を供給可能とする。図１２に示すように、気化器３００は、気化槽１３０と、吐出部１３２と、樹脂材料原料容器１５０と、を有する。 The vaporizer 300 can supply the vaporized resin material to the chamber 110. As illustrated in FIG. 12, the vaporizer 300 includes a vaporization tank 130, a discharge unit 132, and a resin material raw material container 150.
　気化槽１３０は、図１２に示すように、液状の樹脂材料を気化するための内部空間を備え、内部空間の上方には、液状の樹脂材料を噴霧する吐出部１３２が配されている。気化槽１３０は、略円筒状に形成されるが、他の断面形状とされることもできる。気化槽１３０は、その内面が、例えば、ＳＵＳやアルミニウム等からなることができる。 As shown in FIG. 12, the vaporization tank 130 has an internal space for vaporizing the liquid resin material, and a discharge part 132 for spraying the liquid resin material is disposed above the internal space. The vaporization tank 130 is formed in a substantially cylindrical shape, but may have other cross-sectional shapes. The inner surface of the vaporization tank 130 can be made of, for example, SUS or aluminum.
　吐出部１３２には、樹脂材料原料容器１５０にバルブ１４０Ｖを介して接続された樹脂材料液供給管１４０の一端と、窒素ガス等とされるキャリアガスを供給するキャリアガス供給管１３０Ｇと、が接続されている。樹脂材料液供給管１４０の他端は、樹脂材料原料容器１５０に接続されるとともに、樹脂材料原料容器１５０内に貯留された液状の樹脂材料の内部に位置している。 Connected to the discharge section 132 are one end of a resin material liquid supply pipe 140 connected to the resin material raw material container 150 via a valve 140V and a carrier gas supply pipe 130G for supplying a carrier gas such as nitrogen gas. Has been. The other end of the resin material liquid supply pipe 140 is connected to the resin material raw material container 150 and is located inside the liquid resin material stored in the resin material raw material container 150.
　樹脂材料原料容器１５０には、窒素ガス等とされる材料液供給用の加圧ガス供給管１５０Ｇが接続され、樹脂材料原料容器１５０の内圧を上昇させて加圧した液状の樹脂材料は、樹脂材料液供給管１４０へと送液可能となっている。 A pressurized gas supply pipe 150G for supplying a material liquid such as nitrogen gas is connected to the resin material raw material container 150, and the liquid resin material pressurized by increasing the internal pressure of the resin material raw material container 150 is a resin. The liquid can be supplied to the material liquid supply pipe 140.
　吐出部１３２は、樹脂材料液供給管１４０から供給された液状の樹脂材料をキャリアガスとともに気化槽１３０の内部空間に噴霧するよう構成されている。吐出部１３２は、気化槽１３０の頂部略中央位置に設けられている。 The discharge unit 132 is configured to spray the liquid resin material supplied from the resin material liquid supply pipe 140 into the internal space of the vaporization tank 130 together with the carrier gas. The discharge part 132 is provided in the approximate center position of the top part of the vaporization tank 130.
　気化槽１３０には、図１２に示すように、気化槽１３０の下側位置に加温部１３５が設けられる。加温部１３５は、内部空間を上空間と下空間とに分割するように配置され、加温部１３５より上方に気化空間が形成され、下方に貯留部が形成される。 As shown in FIG. 12, the vaporizing tank 130 is provided with a heating unit 135 at a lower position of the vaporizing tank 130. The heating unit 135 is arranged so as to divide the internal space into an upper space and a lower space, a vaporization space is formed above the heating unit 135, and a storage unit is formed below.
　加温部１３５は、吐出部１３２より下方位置に設けられ、吐出部１３２から噴霧された液状の樹脂材料を加熱して気化させるものである。 The heating unit 135 is provided below the discharge unit 132 and heats and vaporizes the liquid resin material sprayed from the discharge unit 132.
　樹脂材料原料容器１５０の内圧を上昇させて、樹脂材料液供給管１４０から供給された液状の樹脂材料を、吐出部１３２からキャリアガスとともに気化槽１３０の内部空間に噴霧する。このとき、吐出部１３２に供給される樹脂材料およびキャリアガスをさらに加温することもできる。 The internal pressure of the resin material raw material container 150 is increased, and the liquid resin material supplied from the resin material liquid supply pipe 140 is sprayed from the discharge unit 132 to the internal space of the vaporization tank 130 together with the carrier gas. At this time, the resin material and the carrier gas supplied to the discharge unit 132 can be further heated.
　吐出部１３２からキャリアガスとともに気化槽１３０の内部空間に噴霧された樹脂材料は、加温された気化槽１３０の内部において気化する。 The resin material sprayed into the internal space of the vaporizing tank 130 together with the carrier gas from the discharge unit 132 is vaporized inside the heated vaporizing tank 130.
　樹脂材料の気化が定常的に行われている間に、制御部４００により、バルブ１１２Ｖを開状態として、チャンバ１１０にガスが流入可能な状態とするとともに、バルブ１１３Ｖを閉状態とする。すると、樹脂材料迂回管１１３（第二配管）は、ガスが流入できない状態となる。これにより、チャンバ１１０に気化した樹脂材料が供給され、成膜処理を行うことが可能となる。 While the resin material is constantly vaporized, the control unit 400 opens the valve 112V so that gas can flow into the chamber 110 and closes the valve 113V. Then, the resin material bypass pipe 113 (second pipe) is in a state where gas cannot flow in. Thereby, the vaporized resin material is supplied to the chamber 110, and the film formation process can be performed.
　切替部の駆動によって、即ち、制御部４００によって、バルブ１１２Ｖ及びバルブ１１３Ｖの開閉状態を切替えるだけで、チャンバ１１０に対する有機材料の供給と、樹脂材料迂回管１１３（第二配管）に対する有機材料の供給とを選択することができる。このため、チャンバ１１０に供給する気化した樹脂材料の供給量を安定化できるため、成膜レートが変動することを防止して、膜特性の優れた樹脂材料膜を安定して形成することが可能となる。さらに、チャンバ１１０における基板の入れ替え時、および、マスクの位置合わせ時に、チャンバ１１０に樹脂材料を導入せずに、樹脂材料の気化を継続して行うことができるので、蒸気発生の停止／開始を繰り返すことなく、蒸気の発生レートを概ね一定にすることができる。 Supplying the organic material to the chamber 110 and supplying the organic material to the resin material bypass pipe 113 (second pipe) simply by switching the open / close state of the valve 112V and the valve 113V by the driving of the switching unit, that is, the control unit 400. And can be selected. For this reason, since the supply amount of the vaporized resin material supplied to the chamber 110 can be stabilized, it is possible to prevent the film formation rate from fluctuating and stably form a resin material film having excellent film characteristics. It becomes. Furthermore, since the resin material can be continuously vaporized without introducing the resin material into the chamber 110 when replacing the substrate in the chamber 110 and when aligning the mask, it is possible to stop / start the generation of vapor. Without repeating, the steam generation rate can be made substantially constant.
　成膜装置１００は、例えば、気化温度４０℃～２５０℃程度とされる紫外線硬化型のアクリル樹脂とされる樹脂材料の成膜と、成膜された樹脂材料の硬化のための紫外線照射とを同一のチャンバ１１０内で可能とするように構成されている。これにより、何れの処理工程も同一の装置構成で行うことが可能となり、生産性を向上させることができる。 The film forming apparatus 100 performs, for example, film formation of a resin material that is an ultraviolet curable acrylic resin having a vaporization temperature of about 40 ° C. to 250 ° C., and ultraviolet irradiation for curing the formed resin material. It is configured to be possible in the same chamber 110. Thereby, it becomes possible to perform any processing process with the same apparatus structure, and it can improve productivity.
　本発明は、樹脂膜の形成方法と、樹脂の形成において有効な構成を備えた製造装置に広く適用可能である。本発明は、例えば、有機ＥＬディスプレイやフレキシブルディスプレイの封止膜として樹脂膜を作製する場合に好適に用いられる。 The present invention can be widely applied to a method for forming a resin film and a manufacturing apparatus having a configuration effective in forming a resin. The present invention is suitably used, for example, when a resin film is produced as a sealing film for an organic EL display or a flexible display.
　ｆ（ｆ１、ｆ２）　アクリル材料膜（樹脂材料膜）、Ｆ（Ｆ１、Ｆ２）　アクリル樹脂膜（樹脂膜）、ＭＢ　メタルマスク、Ｓ　基板　Ｗ　開口部。 F (f1, f2) acrylic material film (resin material film), F (F1, F2) acrylic resin film (resin film), MB metal mask, S substrate W opening.

Claims (8)

  1. 　マスク本体が金属材料からなり所定の開口部を備えたマスクを用い、減圧雰囲気において、基板上に樹脂膜を形成する方法であって、
    　減圧雰囲気において、冷却された支持台に載置された前記基板と接するように前記マスクを設けて、該マスクを介して気化した樹脂材料を供給し該基板上で凝縮させ、該基板上に液体の樹脂材料膜を形成する第１工程と、
    　前記基板から前記マスクを剥離する第２工程と、
    　前記マスク上の樹脂材料膜を熱処理し、該樹脂材料膜を蒸発する第３工程と、
    　前記基板上に残存した樹脂材料膜にＵＶ光を照射し、該樹脂材料膜を硬化して樹脂膜を形成する第４工程と、
    を順に備える、
    　樹脂膜の形成方法。     A method of forming a resin film on a substrate in a reduced-pressure atmosphere using a mask having a predetermined opening portion made of a metal material as a mask body,
    In a reduced-pressure atmosphere, the mask is provided so as to be in contact with the substrate placed on a cooled support table, and the vaporized resin material is supplied through the mask to be condensed on the substrate. A first step of forming a resin material film of
    A second step of peeling the mask from the substrate;
    A third step of heat-treating the resin material film on the mask and evaporating the resin material film;
    A fourth step of irradiating the resin material film remaining on the substrate with UV light and curing the resin material film to form a resin film;
    In order,
    A method for forming a resin film.
  2. 　前記第３工程における熱処理は、加熱装置を用いた前記マスクに対する加熱昇温である、
    　請求項１に記載の樹脂膜の形成方法。     The heat treatment in the third step is a heating temperature rise for the mask using a heating device.
    The method for forming a resin film according to claim 1.
  3. 　前記第３工程における熱処理は、前記マスクが前記支持台から離れたことによる自然昇温によって行われる、
    　請求項１に記載の樹脂膜の形成方法。     The heat treatment in the third step is performed by natural temperature increase due to the mask being separated from the support base.
    The method for forming a resin film according to claim 1.
  4. 　前記第３工程における熱処理においては、前記マスクが前記支持台から離され、加熱されたチャンバもしくはシャワープレートからの輻射熱により加熱される、
    　請求項１に記載の樹脂膜の形成方法。     In the heat treatment in the third step, the mask is separated from the support and heated by radiant heat from a heated chamber or shower plate.
    The method for forming a resin film according to claim 1.
  5. 　マスク本体が金属材料からなり所定の開口部を備えたマスクを用い、減圧雰囲気において、基板上に樹脂膜を形成する装置であって、
    　樹脂膜の材料である気化した樹脂材料を基板上に供給し、凝縮させて樹脂材料膜を形成する時に、前記基板を零度以下の温度帯域に保つ温度制御装置を内蔵する該基板の支持部と、
    　前記樹脂材料膜に対してＵＶ光を照射する前に、前記支持部に載置された状態にある該基板から前記マスクを剥離して、該マスク上の樹脂材料膜を熱処理する機構と、
    　前記樹脂材料膜にＵＶ光を照射して硬化させ、樹脂膜を形成するＵＶ照射装置と、を備える、
    　樹脂膜の成膜装置。     An apparatus for forming a resin film on a substrate in a reduced-pressure atmosphere using a mask whose mask body is made of a metal material and having a predetermined opening,
    A substrate supporting portion including a temperature control device for supplying the vaporized resin material, which is a material of the resin film, onto the substrate and condensing it to form the resin material film; ,
    Before irradiating the resin material film with UV light, a mechanism for peeling the mask from the substrate placed on the support and heat-treating the resin material film on the mask;
    A UV irradiation device for irradiating and curing the resin material film with UV light to form a resin film; and
    Resin film deposition equipment.
  6. 　前記樹脂材料膜を熱処理する機構が、前記マスクの温度増加を促す加熱装置である、
    　請求項５に記載の樹脂膜の成膜装置。     The mechanism for heat-treating the resin material film is a heating device that promotes an increase in the temperature of the mask.
    The film forming apparatus for a resin film according to claim 5.
  7. 　前記樹脂材料膜を熱処理する機構が、前記マスクを支持台から離間させる移動装置である、
    　請求項５に記載の樹脂膜の成膜装置。     The mechanism for heat-treating the resin material film is a moving device that separates the mask from a support base.
    The film forming apparatus for a resin film according to claim 5.
  8. 　前記樹脂材料膜を熱処理する機構が、前記基板を収容するチャンバの加熱装置である、
    　請求項５に記載の樹脂膜の成膜装置。     The mechanism for heat-treating the resin material film is a chamber heating apparatus that houses the substrate.
    The film forming apparatus for a resin film according to claim 5.
PCT/JP2018/005939 2017-02-21 2018-02-20 Formation method of resin film and deposition device of resin film WO2018155421A1 (en)

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