WO2018134971A1 - Dispositif laser et système de génération de rayonnement ultraviolet extrême - Google Patents

Dispositif laser et système de génération de rayonnement ultraviolet extrême Download PDF

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WO2018134971A1
WO2018134971A1 PCT/JP2017/001947 JP2017001947W WO2018134971A1 WO 2018134971 A1 WO2018134971 A1 WO 2018134971A1 JP 2017001947 W JP2017001947 W JP 2017001947W WO 2018134971 A1 WO2018134971 A1 WO 2018134971A1
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Prior art keywords
laser
burst
amplifier
laser device
light
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PCT/JP2017/001947
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English (en)
Japanese (ja)
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義明 黒澤
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ギガフォトン株式会社
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Priority to PCT/JP2017/001947 priority Critical patent/WO2018134971A1/fr
Priority to JP2018562827A priority patent/JPWO2018134971A1/ja
Publication of WO2018134971A1 publication Critical patent/WO2018134971A1/fr
Priority to US16/429,090 priority patent/US11539180B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
    • H01S3/1022—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the optical pumping
    • H01S3/1024—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the optical pumping for pulse generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10007—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
    • H01S3/1301—Stabilisation of laser output parameters, e.g. frequency or amplitude in optical amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
    • H01S3/131—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
    • H01S3/131—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
    • H01S3/134—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation in gas lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2366—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media comprising a gas as the active medium
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/02—ASE (amplified spontaneous emission), noise; Reduction thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10007—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers
    • H01S3/10015—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers by monitoring or controlling, e.g. attenuating, the input signal

Definitions

  • the present disclosure relates to a laser device and an extreme ultraviolet light generation system.
  • an LPP Laser Produced Plasma
  • DPP discharge Produced Plasma
  • JP 2013-207298 A Japanese Patent Laid-Open No. 2008-042048 JP 2012-191171 A
  • a laser apparatus is a laser apparatus that is used together with an external apparatus, and includes a master oscillator that outputs a first pulse laser beam and light of the first pulse laser beam that is output from the master oscillator. At least one amplifier disposed on the path, a sensor disposed on the optical path of the second pulse laser beam output from the at least one amplifier, a burst signal transmitted from an external device, and a signal obtained from the sensor.
  • a laser controller for controlling the operation of the laser device, the laser controller burst-oscillates the laser device based on the burst signal, and based on the signal obtained from the sensor during the burst period of burst oscillation Beam parameters of at least one of the first pulse laser beam and the second pulse laser beam Controls to detect the self-oscillating light from the amplifier based on the signal obtained from the sensor in the burst idle period resting burst oscillation.
  • FIG. 1 is a diagram schematically illustrating a configuration of an exemplary LPP type EUV light generation system.
  • FIG. 2 is a diagram illustrating an operation state of the EUV light generation system.
  • FIG. 3 is a diagram schematically illustrating a configuration example of a laser apparatus used together with the EUV light generation apparatus.
  • FIG. 4 is a timing chart showing an example of a burst permission signal and a burst inhibition signal that the laser controller receives from the exposure apparatus controller via the EUV light generation control system.
  • FIG. 5 is a timing chart showing an example of a burst-on signal and a burst-off signal received by the laser controller from the EUV light generation control system.
  • FIG. 6 is a timing chart showing an example of an oscillation trigger input from the laser controller to the master oscillator.
  • FIG. 7 is a timing chart showing an example of an open signal and a close signal that the laser controller gives to the optical shutter.
  • FIG. 8 is a timing chart showing an example of pulsed laser light output from the master oscillator.
  • FIG. 9 is a timing chart showing an example of pulsed laser light output from an amplifier arranged downstream from the optical shutter.
  • FIG. 10 is a block diagram exemplarily showing the configuration of the laser apparatus according to the first embodiment.
  • FIG. 11 is a configuration diagram illustrating an example in which a beam profiler is used for beam detection in the first embodiment.
  • FIG. 12 is an explanatory diagram of signal processing when the presence or absence of a beam is detected by the beam profiler.
  • FIG. 13 is a flowchart illustrating an example of laser control by the laser controller.
  • FIG. 14 is a flowchart illustrating an example of an optical axis control flow performed in the burst period.
  • FIG. 15 is a flowchart illustrating an example of a self-excited oscillation monitoring flow performed during the burst pause period.
  • FIG. 16 is a timing chart showing the relationship between the burst command given to the laser apparatus and the beam detection by the beam profiler.
  • FIG. 17 is a configuration diagram illustrating an example in which an energy sensor is used for beam detection in the second embodiment.
  • FIG. 18 is a block diagram illustrating a configuration example of the energy sensor.
  • FIG. 19 is a graph showing an example of an energy integration value obtained by integrating the sensor output from the energy sensor.
  • FIG. 19 is a graph showing an example of an energy integration value obtained by integrating the sensor output from the energy sensor.
  • FIG. 20 is a flowchart illustrating an example of a laser control flow applied to the second embodiment.
  • FIG. 21 is a flowchart illustrating an example of an energy control flow performed in the burst period.
  • FIG. 22 is a timing chart showing an example of a strong excitation signal and a weak excitation signal input to the amplifier power supply by the laser controller.
  • FIG. 23 is a diagram illustrating an example of an excitation signal input from the laser controller to the amplifier power supply when the duty ratio is ⁇ / T.
  • FIG. 24 is a diagram illustrating an example of the excitation voltage supplied from the amplifier power supply to the amplifier based on the excitation signal illustrated in FIG. FIG.
  • FIG. 25 is a diagram illustrating an example of a high-frequency voltage supplied from an amplifier power supply to an amplifier based on excitation intensity control by a PWM (Pulse Width Modulation) method.
  • FIG. 26 is a diagram illustrating another example of the high-frequency voltage supplied from the amplifier power supply to the amplifier based on the excitation intensity control by the PWM method.
  • FIG. 27 is a diagram illustrating an example of a high-frequency voltage supplied from an amplifier power source to an amplifier based on excitation intensity control by a potential control method.
  • FIG. 28 is a diagram illustrating an example of a high-frequency voltage supplied from the amplifier power supply to the amplifier based on excitation intensity control by a combination of the PWM method and the potential control method.
  • Embodiment described below shows some examples of this indication, and does not limit the contents of this indication.
  • all the configurations and operations described in the embodiments are not necessarily essential as the configurations and operations of the present disclosure.
  • the same referential mark is attached
  • FIG. 1 schematically shows a configuration of an exemplary LPP type EUV light generation system 10.
  • the EUV light generation device 12 may be used with at least one laser device 14.
  • a system including the EUV light generation apparatus 12 and the laser apparatus 14 is referred to as an EUV light generation system 10.
  • the EUV light generation apparatus 12 includes a chamber 16 and a target supply unit 18.
  • the chamber 16 is a container that can be sealed.
  • the target supply unit 18 is configured to supply the target material into the chamber 16, and is attached to penetrate the wall of the chamber 16, for example.
  • the material of the target substance may include, but is not limited to, tin, terbium, gadolinium, lithium, xenon, or a combination of any two or more thereof.
  • the wall of the chamber 16 is provided with at least one through hole.
  • the through hole is closed by the window 20, and the pulse laser beam 22 output from the laser device 14 is transmitted through the window 20.
  • an EUV light collecting mirror 24 having a spheroidal reflecting surface is disposed.
  • the EUV light collector mirror 24 has a first focus and a second focus.
  • a multilayer reflective film in which molybdenum and silicon are alternately laminated is formed on the surface of the EUV light collector mirror 24.
  • the EUV light collector mirror 24 is disposed so that, for example, the first focus is located in the plasma generation region 26 and the second focus is located in an intermediate focusing point (IF) 28.
  • IF intermediate focusing point
  • a through hole 30 is provided at the center of the EUV light collector mirror 24, and the pulse laser beam 23 passes through the through hole 30.
  • the EUV light generation apparatus 12 includes an EUV light generation control system 40, a target sensor 42, and the like.
  • the target sensor 42 is configured to detect one or more of the presence, trajectory, position, and speed of the target 44.
  • the target sensor 42 may have an imaging function.
  • the EUV light generation apparatus 12 includes a connection portion 48 that communicates the inside of the chamber 16 and the inside of the exposure apparatus 46. Inside the connecting portion 48, a wall 52 in which an aperture 50 is formed is provided inside the connecting portion 48. The wall 52 is arranged so that the aperture 50 is located at the second focal position of the EUV light collector mirror 24.
  • the EUV light generation apparatus 12 includes a laser light transmission device 54, a laser light condensing mirror 56, a target collection unit 58 for collecting the target 44, and the like.
  • the laser light transmission device 54 includes an optical element for defining the transmission state of the laser light and an actuator for adjusting the position, posture, and the like of the optical element.
  • the target recovery unit 58 is disposed on an extension line in the direction in which the target 44 output into the chamber 16 travels.
  • the laser device 14 may be a MOPA (Master Oscillator Power Amplifier) system.
  • the laser device 14 may be configured to include a master oscillator (not shown), an optical isolator (not shown), and a plurality of CO 2 laser amplifiers (not shown).
  • the wavelength of the laser beam output from the master oscillator is, for example, 10.59 ⁇ m, and the repetition frequency of pulse oscillation is, for example, 100 kHz.
  • the operation of an exemplary LPP type EUV light generation system 10 is described with reference to FIG.
  • the inside of the chamber 16 is maintained at a pressure lower than the atmospheric pressure, and may be a vacuum.
  • a gas having a high EUV light transmittance may exist inside the chamber 16.
  • the pulsed laser light 21 output from the laser device 14 passes through the window 20 as the pulsed laser light 22 through the laser light transmission device 54 and enters the chamber 16.
  • the pulse laser beam 22 travels along the at least one laser beam path in the chamber 16, is reflected by the laser beam collector mirror 56, and is irradiated to the at least one target 44 as the pulse laser beam 23.
  • the target supply unit 18 is configured to output the target 44 formed of the target material toward the plasma generation region 26 inside the chamber 16.
  • the target supply unit 18 forms droplets by, for example, a continuous jet method.
  • the nozzle is vibrated, a standing wave is applied to the flow of the target material ejected in a jet shape from the nozzle hole, and the target material is periodically separated.
  • the separated target material can form a free interface by its own surface tension to form a droplet.
  • the target 44 is irradiated with at least one pulse included in the pulse laser beam 23.
  • the target 44 irradiated with the pulse laser beam is turned into plasma, and radiation light 60 is emitted from the plasma.
  • the EUV light 62 included in the radiation light 60 is selectively reflected by the EUV light collector mirror 24.
  • the EUV light 62 reflected by the EUV light condensing mirror 24 is condensed at the intermediate condensing point 28 and output to the exposure device 46.
  • a single target 44 may be irradiated with a plurality of pulses included in the pulsed laser light 23.
  • the EUV light generation control system 40 is configured to control the entire EUV light generation system 10.
  • the EUV light generation control system 40 is configured to process the detection result of the target sensor 42. Based on the detection result of the target sensor 42, the EUV light generation control system 40 may be configured to control the timing at which the target 44 is output, the output direction of the target 44, and the like, for example. Further, the EUV light generation control system 40 may be configured to control, for example, the oscillation timing of the laser device 14, the traveling direction of the pulse laser light 22, the focusing position of the pulse laser light 23, and the like.
  • the various controls described above are merely examples, and other controls may be added as necessary.
  • the EUV light generation control system 40 and other control devices can be realized by a combination of hardware and software of one or a plurality of computers.
  • Software is synonymous with program.
  • Programmable controllers are included in the concept of computers.
  • the functions of multiple control devices can be realized by a single control device.
  • the EUV light generation control system 40 and other control devices may be connected to each other via a communication network such as a local area network or the Internet.
  • program units may be stored in both local and remote memory storage devices.
  • the EUV light generation system 10 may output EUV light by burst operation.
  • the burst operation is an operation operation in which a burst period in which EUV light is generated over a first predetermined period at a predetermined repetition frequency and a burst pause period in which generation of EUV light is stopped over a second predetermined period are repeated for a certain period of time.
  • the pulse laser beam irradiation is performed at a predetermined repetition frequency
  • the burst pause period the pulse laser beam irradiation is stopped. That is, the pulse laser beam 21 is output from the laser device 14 during the burst period.
  • the burst pause period the output of the pulsed laser light 21 from the laser device 14 is stopped.
  • One burst period may be called one burst.
  • the burst pattern which is a repetition pattern of the burst period and the burst pause period, is one of the EUV light energy of the burst period, the repetition frequency, the number of pulses and the length of the burst pause period, and the number of bursts, or a plurality of these Can be defined by data containing
  • the burst pattern is instructed by the exposure device 46.
  • FIG. 2 is a diagram illustrating an operation state of the EUV light generation system 10.
  • the EUV light generation system 10 used together with the exposure device 46 outputs EUV light having a predetermined repetition frequency (hereinafter referred to as pulsed EUV light) to the exposure device 46 when the exposure device 46 exposes the wafer.
  • a period during which the EUV light generation system 10 outputs pulsed EUV light to the exposure device 46 is referred to as a burst period TB (see FIG. 2).
  • the EUV light generation system 10 stops supplying the pulsed EUV light to the exposure apparatus 46 during the wafer movement time, the wafer exchange time, the mask exchange time, and the like in the exposure apparatus 46.
  • a period during which the EUV light generation system 10 stops supplying pulsed EUV light to the exposure apparatus 46 is referred to as a burst pause period TR.
  • the laser device 14 in order to perform a burst operation in which pulsed EUV light is output as necessary, the laser device 14 similarly similarly uses pulse laser light with a predetermined repetition frequency as necessary. May occur in burst operation. Performing pulse oscillation for a predetermined period by burst operation is called burst oscillation.
  • Pulse laser light may mean laser light including a plurality of pulses.
  • Laser light may mean not only pulsed laser light but general laser light.
  • Laser optical path means the optical path of laser light. In the optical path of the laser beam, the laser beam generation source side is “upstream”, and the laser beam arrival target side is “downstream”.
  • CO 2 represents carbon dioxide
  • the “predetermined repetition frequency” may be an approximately predetermined repetition frequency, and does not necessarily have to be a constant repetition frequency.
  • Target is an object to be irradiated with laser light introduced into the chamber.
  • the target irradiated with the laser light is turned into plasma and emits EUV light.
  • the target is a plasma generation source.
  • Droplet is a form of target supplied into the chamber.
  • a droplet is synonymous with a droplet-like target.
  • a droplet can mean a target that has become substantially spherical due to the surface tension of the molten target material.
  • Pulsma light is radiation light emitted from a plasma target.
  • the emitted light includes EUV light.
  • EUV light is an abbreviation for “extreme ultraviolet light”.
  • FIG. 3 is a diagram schematically illustrating a configuration example of the laser device 14 used together with the EUV light generation device.
  • the laser device 14 includes a master oscillator 102, an optical shutter 103, a plurality of amplifiers 110 1 to 110 4 , a plurality of amplifier power supplies 120 1 to 120 4, and a laser controller 140.
  • the notation of the amplifiers 110 1 to 110 4 means “amplifiers 110 1 , 110 2, 110 3, 110 4 ”.
  • the notation of the amplifier power supplies 120 1 to 120 4 means “amplifier power supplies 120 1 , 120 2, 120 3, 120 4 ”.
  • a combination of the master oscillator 102 and the amplifiers 110 1 to 110 4 constitutes a MOPA (Master Oscillator Power Amplifier) system.
  • a power supply (not shown) may be connected to the master oscillator 102.
  • the master oscillator 102 can output laser light including the wavelength of the amplification region of the CO 2 laser amplifier at a predetermined repetition frequency.
  • the wavelength of the pulse laser beam output from the master oscillator 102 is, for example, 10.59 micrometers [ ⁇ m], and the predetermined repetition frequency is, for example, 100 kilohertz [kHz].
  • a solid-state laser can be used for the master oscillator 102.
  • a semiconductor laser may be used as the master oscillator 102.
  • MO represents “master oscillator”.
  • the master oscillator 102 is connected to the laser controller 140.
  • the optical shutter 103 is disposed on the optical path of the pulse laser beam output from the master oscillator 102.
  • the optical shutter 103 is connected to the laser controller 140.
  • the amplifiers 110 1 to 110 4 are arranged on the optical path of the pulse laser beam output from the master oscillator 102.
  • the first-stage amplifier 110 1 from the upstream side of the optical path is “PA1”, and the second-stage amplifier 110 2. is denoted as "PA2" third stage amplifier 110 3 "PA3" fourth-stage amplifier 110 4 "PA4".
  • the upstream side of the optical path refers to the side close to the master oscillator 102 in the optical path of the pulse laser beam.
  • the pulsed laser light travels from the upstream to the downstream of the optical path.
  • PA represents “amplifier”.
  • FIG. 3 shows an example of the laser device 14 including four amplifiers 110 1 to 110 4 , the number of amplifiers constituting the MOPA system is not limited to this example.
  • the laser device 14 can be configured to include n amplifiers. n may be an integer of 1 or more. That is, the laser device 14 includes at least one amplifier, and the amplifier is disposed on the optical path of the pulsed laser light output from the master oscillator 102.
  • Each of the amplifiers 110 1-110 4 is a CO 2 laser amplifier for the CO 2 laser gas as a medium.
  • the CO 2 laser amplifier amplifies laser light by exciting the CO 2 laser gas to discharge.
  • CO 2 laser gas is an example of a laser medium containing carbon dioxide.
  • Each of the amplifiers 110 1-110 4 is connected to the corresponding amplifier power supply 120 1 to 120 4.
  • the amplifier power source 120 1 connected to the amplifier 110 1 is represented as “PA power source 1”
  • the amplifier power source 120 2 connected to the amplifier 110 2 is connected to the “PA power source 2” and the amplifier 110 3.
  • the amplifier power supply 120 4 connected to the amplifier 110 4 "PA power 4”.
  • Each of the amplifier power supplies 120 1 to 120 4 is a high frequency (RF) power supply that supplies power necessary for discharge excitation to each of the amplifiers 110 1 to 110 4 .
  • the amplifier power supplies 120 1 to 120 4 are connected to the laser controller 140.
  • “RF” is an abbreviation for Radio Frequency.
  • the laser device 14 includes an MO sensor 126 and amplifier sensors 130 1 to 130 4 .
  • MO sensor 126 includes a master oscillator 102 is disposed in the laser beam path between the amplifier 110 of the first stage.
  • the MO sensor 126 may be an energy sensor that detects the energy of pulsed laser light output from the master oscillator 102.
  • Each of the amplifier sensors 130 1 to 130 4 is arranged on the output side of each of the amplifiers 110 1 to 110 4 .
  • the amplifier sensors 130 1 to 130 4 may be energy sensors that detect the energy of light output from the amplifiers 110 1 to 110 4 , respectively.
  • Each of the MO sensor 126 and the amplifier sensors 130 1 to 130 4 is connected to the laser controller 140. Sensor output signals of the MO sensor 126 and the amplifier sensors 130 1 to 130 4 are input to the laser controller 140.
  • the laser controller 140 is a control device that controls the operation of the laser device 14.
  • the laser controller 140 is connected to the EUV light generation control system 40.
  • the EUV light generation control system 40 is connected to the exposure apparatus controller 70.
  • the exposure apparatus controller 70 is a control apparatus that controls the operation of the exposure apparatus 46.
  • the exposure apparatus controller 70 may be included in the exposure apparatus 46 described with reference to FIG.
  • the EUV light sensor 74 is disposed in the chamber 16.
  • the EUV light sensor 74 may be an energy sensor that detects the energy of EUV light generated in the chamber 16.
  • the EUV light sensor 74 is connected to the laser controller 140. Although one EUV light sensor 74 is shown in FIG. 3, a plurality of EUV light sensors 74 may be arranged in the chamber 16.
  • the chamber 16 includes a laser beam condensing optical system 72.
  • the laser beam condensing optical system 72 is simplified, but the laser beam condensing optical system 72 is an optical system including the laser beam condensing mirror 56 described in FIG.
  • the exposure apparatus controller 70 can transmit a burst-on command or a burst-off command to the EUV light generation control system 40 of the EUV light generation apparatus 12.
  • the laser apparatus 14 In response to the burst-on command from the exposure apparatus controller 70, the laser apparatus 14 generates pulsed laser light.
  • the laser controller 140 controls the operation of the laser device 14 in accordance with a command from the EUV light generation control system 40.
  • the laser controller 140 can receive the burst permission signal S1 and the burst inhibition signal S2 from the exposure apparatus controller 70 via the EUV light generation control system 40.
  • the laser controller 140 causes the master oscillator 102 to oscillate at a predetermined repetition rate.
  • the laser controller 140 outputs an MO excitation current signal to the master oscillator 102.
  • the laser controller 140 operates the optical shutter 103 to cause the laser device 14 to perform a burst operation.
  • the laser controller 140 opens the optical shutter 103 during the burst period TB and closes the optical shutter 103 during the burst pause period TR.
  • the state in which the optical shutter 103 is “open” refers to a state in which pulse laser light is transmitted.
  • the state where the optical shutter 103 is “closed” refers to a state where the pulse laser beam is not transmitted.
  • the laser controller 140 operates the amplifier power supplies 120 1 to 120 4 so that each of the amplifiers 110 1 to 110 4 has a predetermined excitation intensity a predetermined time before the start of the burst period TB. This predetermined time is defined as Ts (see FIG. 4).
  • the laser controller 140 receives from the EUV light generation control system 40 a signal for instructing the timing of starting excitation of the amplifiers 110 1 to 110 4 .
  • the laser controller 140 outputs an excitation discharge current command value to each of the amplifier power supplies 120 1 to 120 4 .
  • the amplifier power supplies 120 1 to 120 4 supply discharge currents to the amplifiers 110 1 to 110 4 in accordance with the current command value from the laser controller 140.
  • the amplifier power supplies 120 1 to 120 4 continue to excite the amplifiers 110 1 to 110 4 even during the burst-off period.
  • the MO sensor 126 detects the energy of the pulse laser beam output from the master oscillator 102. Information on the sensor detection value output from the MO sensor 126 is input to the laser controller 140.
  • the amplifier sensor 130 1 detects the energy of the pulse laser beam output from the amplifier 110 1 .
  • the amplifier sensor 130 1 transmits information on the detected value to the laser controller 140.
  • each of the amplifier sensors 130 2 , 130 3 , and 130 4 detects the energy of the pulsed laser light output from the amplifiers 110 2 , 110 3 , and 110 4 , and transmits detected value information to the laser controller 140.
  • the pulse laser beam output from the laser device 14 is irradiated to the target 44 via the laser beam focusing optical system 72.
  • FIG. 4 is a timing chart showing an example of the burst permission signal S1 and the burst inhibition signal S2 that the laser controller 140 receives from the exposure apparatus controller 70 via the EUV light generation control system 40.
  • FIG. 5 is a timing chart showing an example of the burst-on signal S3 and the burst-off signal S4 received by the laser controller 140 from the EUV light generation control system 40.
  • the burst permission signal S1 is a signal by which the exposure apparatus controller 70 permits the laser apparatus 14 to output a burst of pulsed EUV light.
  • the burst-on signal S3 is a signal for the EUV light generation control system 40 to instruct the laser controller 140 of the laser device 14 to output a burst of pulsed laser light. Therefore, the period during which the burst-on signal S3 is output from the EUV light generation control system 5 is the burst period TB.
  • a signal whose voltage level is “ON” is the burst permission signal S1
  • a signal whose voltage level is “OFF” is the burst inhibition signal S2.
  • a signal whose voltage level is “ON” is a burst-on signal S3
  • a signal whose voltage level is “OFF” is a burst-off signal S4.
  • the voltage level corresponding to “OFF” may be zero.
  • the burst-on signal S3 is input to the laser controller 140 at a timing delayed by a predetermined time Ts from the rising timing of the burst permission signal S1.
  • Time t0 shown in FIGS. 4 and 5 indicates the timing at which the burst-on signal S3 is input to the laser controller 140.
  • the burst prohibition signal S2 is a signal for the exposure apparatus controller 70 to prohibit the burst output of pulsed EUV light to the laser apparatus 14.
  • the burst-off signal S4 is a signal for the EUV light generation control system 40 to stop the burst output of the pulsed laser light from the laser controller 140 of the laser device 14.
  • the input timing of the burst inhibition signal S2 and the burst off signal S4 to the laser controller 140, that is, the falling timing of the burst permission signal S1 and the burst on signal S3 may be the same timing.
  • the burst off signal S4 may be input to the laser controller 140 at a timing after a predetermined time Ts from the timing of the burst inhibition signal S2.
  • the burst-on signal S3 and the burst-off signal S4 sent from the EUV light generation control system to the laser controller in conjunction with the burst permission signal S1 and the burst inhibition signal S2 issued from the exposure apparatus controller 70 are “sent from an external device”. This corresponds to an example of “burst signal”.
  • the burst-on signal S3 and the burst-off signal S4 may be sent from the exposure apparatus controller 70.
  • FIG. 6 is a timing chart showing an example of the oscillation trigger S5 that the laser controller 140 receives from the EUV light generation control system 5 and inputs to the master oscillator 102.
  • the oscillation trigger S5 may be input to the master oscillator 102 at a predetermined repetition frequency from the timing when the laser device 14 is activated and the system can be operated.
  • the timing at which the system can be operated means the timing at which the laser device 14 can perform laser oscillation.
  • the oscillation trigger S5 may be continuously input to the master oscillator 102 at a predetermined repetition frequency after the timing at which the burst permission signal S1 is first received from the EUV light generation control system 5. Therefore, even during the burst pause period TR, the oscillation trigger S5 may be input to the master oscillator 102 at a predetermined repetition frequency.
  • FIG. 7 is a timing chart showing an example of the open signal S8 and the close signal S9 that the laser controller 140 gives to the optical shutter 103.
  • FIG. 8 is a timing chart showing an example of the pulsed laser light L1 output from the master oscillator 102.
  • one of the optical shutter amplifier 110 1 disposed downstream from 103-110 4 is a timing chart showing example pulsed laser light L2 output from the final amplifier 110 4.
  • the laser controller 140 generates an open signal S8 for opening the optical shutter 103 during the burst input signal S3 from the EUV light generation control system 5, that is, the burst period TB. May be entered. During other periods, that is, the burst pause period TR, the laser controller 140 inputs to the optical shutter 103 a close signal S9 for closing the optical shutter 103.
  • the master oscillator 102 continuously outputs the pulsed laser light L1 at a predetermined repetition frequency corresponding to the oscillation trigger S5 shown in FIG. For this reason, the output of the pulse laser beam L1 is blocked by the optical shutter 103 during the burst pause period TR.
  • the downstream side of the amplifier 110 1-110 4 for example final amplifier 110 4 from the optical shutter 103 the burst period TB only amplified pulse laser beam L2 is outputted.
  • the pulsed laser light L1 output from the master oscillator 102 may be referred to as seed light.
  • the pulse laser beam L1 corresponds to an example of “first pulse laser beam”.
  • the laser device 14 amplifies laser light by putting seed light into the amplifiers 110 1 to 110 4 .
  • self-excited oscillation may occur in the amplifiers 110 1 to 110 4 .
  • Each amplifier is maintained in the excited state even in the burst pause period TR of the burst operation. If the pump excitation state is maintained and the amplifier is in a high gain state, self-excited oscillation can be generated in the amplifier even if seed light does not enter the amplifier, and self-excited oscillation light can be generated.
  • the self-oscillation light generated by the amplifier also travels in the upstream direction (return direction) of the laser optical path.
  • FIG. 10 is a block diagram exemplarily showing a configuration of a laser apparatus according to the first embodiment.
  • the laser device 14 includes sensors 150 1 to 150 4 for measuring the beam parameters of the laser light in the laser light path.
  • the notation of the sensors 150 1 to 150 4 means “sensors 150 1 , 150 2 , 150 3 , 150 4 ”.
  • FIG. 10 shows a form in which the sensors 150 1 to 150 4 are arranged in the laser beam paths behind the amplifiers 110 1 to 110 4 , but the arrangement form of the sensors 150 1 to 150 4 is the example of FIG. Not limited to.
  • a sensor for measuring a beam parameter is disposed behind at least one amplifier.
  • the last of the amplifier 110 4 may be configured to place the sensor 150 4. Since the detection sensitivity is highest behind the final amplifier, a configuration in which the sensor is disposed at least behind the final amplifier is preferable.
  • Each of the sensors 150 1 to 150 4 is, for example, a beam profiler.
  • Beam parameters that can be measured by the beam profiler include beam light quantity, beam area, beam position, and the like.
  • the beam area is an area of a beam cross section perpendicular to the optical axis of the laser optical path.
  • the beam position refers to the center position of the beam cross section.
  • the laser device 14 includes laser light transmission optical systems 160 1 to 160 4 that guide the laser light to the sensors 150 1 to 150 4 .
  • the laser light transmission optical system 160 1 includes, for example, a first mirror 162 1 , a beam splitter 170 1 , a second mirror 164 1, and a third mirror 166 1 .
  • the EUV light generation apparatus 12 includes a display device 80.
  • the display device 80 is connected to the EUV light generation control system 40.
  • the display device 80 may be a computer display that functions as the EUV light generation control system 40.
  • the laser apparatus 14 When a signal for instructing burst-on is issued from the exposure apparatus controller 70, the laser apparatus 14 generates pulsed laser light. Laser light output from the amplifier 110 1 during the burst period is reflected by the first mirror 162 1 and travels toward the beam splitter 170 1 . A part of the laser light reflected by the first mirror 162 1 passes through the beam splitter 170 1 and enters the sensor 150 1 . The laser beam reflected by the beam splitter 170 1, through one second mirror 164 1 and the third mirror 166, is input to the next amplifier 110 2.
  • the laser light output from the amplifier 110 2 during the burst period is reflected by the first mirror 162 2 and travels toward the beam splitter 170 2.
  • Some of the laser light reflected by the first mirror 162 2 is transmitted through the beam splitter 170 2 enters the sensor 150 2.
  • the laser beam reflected by the beam splitter 170 2, the second through the mirror 1642 and the third mirror 166 2, are input to the next amplifier 110 3.
  • Amplifier 110 3 laser light transmitting optical system 160 3 arranged behind the sensor 150 3, and, for the amplifier 110 4 laser light transmitting optical system 160 4 and the sensor 150 4 arranged behind operates similarly .
  • Final pulse laser light outputted from the amplifier 110 4 is outputted from the laser device 14 as a final pulsed laser beam 21 through a third mirror 166 4 (see FIG. 1).
  • the laser controller 140 performs control of laser light, for example, feedback control of the optical axis of the laser light path, based on signals (sensor output signals) obtained from the sensors 150 1 to 150 4 .
  • the laser controller 140 monitors the sensor output signals from the sensors 150 1 to 150 4 to determine the presence / absence of a beam, and determines that self-excited oscillation has occurred when there is a beam. To do. When the laser controller 140 determines that self-excited oscillation has occurred, the laser controller 140 issues a self-excited oscillation error to the EUV light generation control system 40.
  • the laser controller 140 performs control to reduce at least one discharge intensity of the amplifier power supplies 120 1 to 120 4 .
  • Control for reducing the excitation intensity includes control for stopping excitation.
  • the EUV light generation control system 40 displays a warning on the display device 80 when a self-excited oscillation error is received from the laser controller 140.
  • the sensor used for beam control is also utilized for self-excited oscillation detection, and the optical axis control and self-excited oscillation monitoring are switched in conjunction with the burst signal.
  • self-excited oscillation can be detected using a sensor used for optical axis control without adding a special sensor for detecting self-excited oscillation. Thereby, when the self-excited oscillation occurs during the burst pause period, the occurrence of the self-excited oscillation can be automatically detected.
  • self-excited oscillation when self-excited oscillation is detected, it is possible to suppress damage to the optical elements and the like constituting the laser device 14 by stopping excitation of at least one amplifier.
  • FIG. 11 is a configuration diagram showing an example using a beam profiler for beam detection in the first embodiment. In Figure 11, but it illustrates an amplifier 110 1 part of the first stage may employ a similar configuration applies to the second and subsequent stages of the amplifier.
  • the laser device 14 includes an actuator with mirror 180 in front of the laser beam path of the amplifier 110 1.
  • the laser device 14 includes a beam profiler 152 1 on the laser optical path behind the amplifier 110 1 .
  • the laser light path in front of the amplifier 110 1, a laser beam path upstream of the amplifier 1101, refers to the laser beam path of the incident side for introducing the laser beam to the amplifier 110 1.
  • the laser light path behind the amplifier 110 1 is a laser light path on the downstream side of the amplifier 110 1 , and indicates a laser light path on the emission side where the laser light amplified by the amplifier 110 1 is output.
  • the beam profiler 152 1 is an example of the sensor 150 1 shown in FIG.
  • a beam profiler 152 configuration using the thermal infrared detection element is preferred.
  • Suitable thermal infrared detection element to the beam profiler 152 for example, a pyroelectric sensor or a micro-bolometer.
  • the mirror with actuator 180 is connected to the laser controller 140.
  • the laser controller 140 can transmit a mirror operation command to the mirror with actuator 180.
  • the mirror with actuator 180 is driven based on a mirror operation command.
  • By adjusting the angle of the actuator with a mirror 180 may adjust the traveling direction of the pulsed laser light incident to the amplifier 110 1.
  • the light transmitted through the beam splitter 170 1 is projected onto the light receiving surface of the beam profiler 152 1 through a lens (not shown).
  • Beam profiler 152 1 outputs a signal corresponding to the amount of light received.
  • the beam profile includes the intensity profile of the beam cross section and the position of the beam cross section.
  • the light reflected by the beam splitter 170 1 is reflected by the second mirror 164 1 and the third mirror 166 1 and then proceeds to the next-stage amplifier.
  • Laser controller 140 acquires data from the beam profiler 152 1.
  • Beam profiler 152 1 may provide light quantity data indicating a two-dimensional intensity distribution of the laser beam projected on the light receiving surface to the laser controller 140. If during the burst period, the laser controller 140 analyzes the beam position from the data obtained from the beam profiler 152 1, so that the deviation between the target position is small, the feedback control issuing a mirror operation command to the actuator with the mirror 180 I do.
  • the laser controller 140 determines beam whether the light quantity data obtained from the beam profiler 152 1, when it is determined that "beam present" is determined to occur self-oscillation.
  • FIG. 12 is an explanatory diagram of signal processing when the presence or absence of a beam is detected by the beam profiler.
  • FIG. 12 shows an example of a cross section of an intensity profile obtained from the beam profiler.
  • the horizontal axis in FIG. 12 represents the position, and the vertical axis represents the amount of light.
  • the light amount of the beam detected by the beam profiler during the burst period can be a digital value in the range of approximately 4000 to 16383.
  • the amount of self-oscillation light when self-oscillation occurs during the burst pause period is lower than the amount of beam detected during the burst period.
  • a light amount threshold value and a beam area threshold value which are determination criteria for determining the presence or absence of a beam are set in advance. Then, if the light amount detected by the beam profiler is equal to or greater than the light amount threshold value and the beam area having the light amount equal to or greater than the light amount threshold value is equal to or greater than the beam area threshold value, it can be determined that there is a beam.
  • FIG. 12 shows an example in which the light amount threshold is set to “100”, for example.
  • the light amount threshold for detecting self-excited oscillation during the burst pause period and the light amount threshold for detecting the beam during the burst period may be set differently.
  • the light intensity threshold for detecting self-excited oscillation during the burst pause period can be set to a value smaller than the light intensity threshold for beam detection during the burst period.
  • the light amount threshold value for detecting self-excited oscillation during the burst pause period may be set to “100”, and the light amount threshold value for the burst period may be set to “500”.
  • the intensity profile indicated by the waveform 184 is determined as “with beam”.
  • the intensity profile indicated by the waveform 185 is determined as “no beam”.
  • FIG. 13 is a flowchart illustrating an example of a laser control flow. Each step of the flowchart of FIG. 13 is executed by the laser controller 140. Based on the burst signal from the exposure apparatus controller 70, the laser controller 140 performs beam control (step S30) and self-excited oscillation monitoring (step S40) according to the determination of the burst-on or burst-off state (step S20). Switch.
  • the beam control in this example includes optical axis control by the mirror with actuator 180.
  • step S20 the laser controller 140 determines whether the burst signal is in a burst-on state or a burst-off state.
  • the burst-on state corresponds to a burst period.
  • the burst off state corresponds to a burst pause period.
  • step S20 If the laser controller 140 determines in step S20 that the burst is on, the process proceeds to step S30.
  • step S30 the laser controller 140 performs optical axis control, which is an example of beam control.
  • optical axis control A specific example of the optical axis control will be described later (FIG. 14).
  • step S20 If the laser controller 140 determines in step S20 that the burst is off, the process proceeds to step S40.
  • step S40 the laser controller 140 performs a process of monitoring self-excited oscillation.
  • a specific example of the process for monitoring the self-excited oscillation will be described later (FIG. 15).
  • the laser device 14 performs optical axis control as beam parameter control of laser light and self-excited oscillation monitoring processing in conjunction with on / off switching of a burst signal. Switch.
  • FIG. 14 is a flowchart showing an example of the optical axis control flow performed during the burst period. Each step of the flowchart of FIG. 14 is executed by the laser controller 140. Before describing each step in detail, an outline of the optical axis control flow shown in FIG. 14 will be described.
  • the laser controller 140 evaluates the sensor data from the beam profiler when the burst is on (step S32), and determines whether the beam position information is valid (step S33). The laser controller 140 determines whether or not a beam area having a beam light amount equal to or greater than the light amount threshold is equal to or greater than the beam area threshold, using a preset light amount threshold and a beam area threshold.
  • the laser controller 140 calculates a deviation amount between the current beam position and the target position (step S34), and calculates a mirror drive amount from the deviation amount (step S36). Then, the laser controller 140 issues a command to drive the mirror with an actuator based on the calculated mirror driving amount (step S38). During the burst period, the processing from step S32 to step S38 is repeated, and when the burst signal is turned off, the optical axis control flow in FIG. 14 is terminated.
  • step S31 the laser controller 140 determines whether the burst signal is in a burst-on state or a burst-off state.
  • Step S31 may be the determination process of step S20 of FIG.
  • step S31 If the laser controller 140 determines in step S31 that the burst is on, the process proceeds to step S32.
  • step S32 the laser controller 140 evaluates sensor data from the beam profiler.
  • a light amount threshold value and a beam area threshold value used for evaluation of sensor data are set (see FIG. 12).
  • the laser controller 140 compares the light amount detected by the beam profiler with a light amount threshold value, and calculates a beam area having a light amount equal to or larger than the light amount threshold value. Further, the laser controller 140 compares the beam area with the light amount equal to or greater than the light amount threshold with the beam area threshold to evaluate whether or not the beam area is equal to or greater than the beam area threshold. Further, the laser controller 140 performs a process of specifying a beam position that is a center position of a beam section having a light amount equal to or greater than a light amount threshold value from the sensor data.
  • step S33 the laser controller 140 determines whether the beam position information of the beam profiler is valid based on the processing result of the beam data evaluation in step S32.
  • the laser controller 140 determines that the beam position information is valid if the light amount detected by the beam profiler is equal to or greater than the light amount threshold and the beam area of the light amount equal to or greater than the light amount threshold is equal to or greater than the beam area threshold.
  • step S33 when the laser controller 140 determines that the beam position information is invalid, the laser controller 140 returns to step S31.
  • step S33 if the laser controller 140 determines that the beam position information is valid, the process proceeds to step S34.
  • step S34 the laser controller 140 calculates the deviation amount between the beam position measured from the sensor data and the target position.
  • step S36 the laser controller 140 calculates the mirror drive amount based on the deviation amount calculated in the process of step S34.
  • step S38 the laser controller 140 drives the mirror with the actuator according to the mirror drive amount calculated in the process of step S36. After the process of step S38, the laser controller 140 returns to step S31 and repeats the processes of step S31 to step S38 until the burst signal is turned off.
  • the laser controller 140 ends the optical axis control flow of FIG. 14 when the burst signal is turned off in step S31.
  • FIG. 15 is a flowchart illustrating an example of a self-excited oscillation monitoring flow performed during the burst pause period. Each step of the flowchart of FIG. 15 is executed by the laser controller 140. Before describing each step in detail, an outline of the self-oscillation monitoring flow shown in FIG. 15 will be described.
  • the laser controller 140 evaluates the sensor data from the beam profiler in the burst-off state (step S42), and determines that self-excited oscillation has occurred if it is determined that there is a beam. In this case, the laser controller 140 issues a self-excited oscillation error indicating that self-excited oscillation has been detected (step S44). Further, the laser controller 140 stops the excitation of the amplifier (step S45). All of the plurality of amplifier power supplies may be stopped, or only some of them may be stopped.
  • step S42 the processing from step S42 to step S45 is repeated, and when the burst signal is burst on, the self-oscillation monitoring flow in FIG.
  • step S41 the laser controller 140 determines whether the burst signal is in a burst-on state or a burst-off state.
  • Step S41 may be a step common to the determination process of step S20 of FIG.
  • step S41 If the laser controller 140 determines in step S41 that the burst is off, the process proceeds to step S42.
  • step S42 the laser controller 140 evaluates sensor data from the beam profiler.
  • a light amount threshold value and a beam area threshold value used for evaluation of sensor data are set (see FIG. 12).
  • the laser controller 140 compares the light quantity detected by the beam profiler with a light quantity threshold value, and calculates a beam area having a light quantity equal to or larger than the light quantity threshold value. Further, the laser controller 140 compares the beam area with the light amount equal to or greater than the light amount threshold with the beam area threshold to evaluate whether or not the beam area is equal to or greater than the beam area threshold.
  • the light amount threshold and the beam area threshold applied to the process of step S42 may be the same as or different from the light amount threshold and the beam area threshold applied to the process of step S32 in FIG.
  • step S43 the laser controller 140 performs beam detection determination for determining whether or not a beam is detected based on the processing result of the beam data evaluation in step S42. If the light amount detected by the beam profiler is equal to or greater than the light amount threshold value and the beam area of the light amount equal to or greater than the light amount threshold value is equal to or greater than the beam area threshold value, the laser controller 140 determines that “beam is present”.
  • step S43 when the laser controller 140 determines that “no beam”, the process returns to step S41.
  • step S43 if the laser controller 140 determines that “there is a beam”, the process proceeds to step S44.
  • step S44 the laser controller 140 issues a self-excited oscillation error that is error information indicating that self-excited oscillation has been detected.
  • step S45 the laser controller 140 stops the excitation of the amplifier. That is, the laser controller 140 stops all or some of the plurality of amplifier power supplies. By step S45, the occurrence of self-excited oscillation is suppressed.
  • the laser controller 140 ends the self-excited oscillation monitoring flow of FIG. 15 after the process of step S45. Further, when the burst signal is turned on in step S41, the laser controller 140 ends the self-oscillation monitoring flow of FIG.
  • FIG. 16 is a timing chart showing the relationship between the burst command given to the laser apparatus and the beam detection by the beam profiler.
  • the signal (A) shown at the top of FIG. 16 is a burst command signal.
  • the signal (B) shown in the second row from the top in FIG. 16 is an example of a sensor output signal obtained from the beam profiler.
  • the signal (C) shown in the third row from the top in FIG. 16 is an example of a beam detection signal determined to have a beam in light of the evaluation of the light amount threshold value and the beam area threshold value. In FIG. 16, the light amount threshold is set to 100.
  • the signal (D) shown at the bottom of FIG. 16 is an example of a self-excited oscillation determination signal based on the beam detection signal (C).
  • the sensor output is, for example, about 8000 light, and a beam is detected.
  • the burst command is off, when the sensor output becomes a value equal to or greater than the light amount threshold, it is determined that there is a beam, and the beam is detected. If the burst command is on when the beam is detected, the laser controller 140 determines that the beam is generated by normal burst oscillation in the burst period.
  • the laser controller 140 determines that self-oscillation occurs during the burst pause period.
  • the optical axis feedback control mechanism for adjusting the optical axis of the laser beam is used as it is during the burst pause period. Self-excited oscillation detection is possible. Since the beam profiler has a sufficiently high response speed of several tens of milliseconds and a wide dynamic range, it can be detected from low-power self-oscillation light.
  • the pulse laser beam output from each of the amplifiers 110 1 to 110 4 corresponds to an example of a “second pulse laser beam”.
  • the process in which the laser controller 140 controls the optical axis according to the optical axis control flow of FIG. 14 corresponds to an example of the process of “controlling beam parameters”.
  • the process in which the laser controller 140 detects self-excited oscillation light in accordance with the self-excited oscillation monitoring flow of FIG. 15 is “detects self-excited oscillation light from the amplifier based on the sensor output signal obtained from the sensor during the burst pause period.
  • the EUV light generation control system 40 corresponds to an example of a “control system”.
  • Second Embodiment 7.1 Configuration In the second embodiment, an energy sensor is used instead of the beam profiler in the first embodiment. Hereinafter, differences from the first embodiment will be described.
  • FIG. 17 is a configuration diagram illustrating an example in which an energy sensor is used for beam detection of laser light. In Figure 17, but it illustrates an amplifier 110 1 part of the first stage may employ a similar configuration applies to the second and subsequent stages of the amplifier.
  • the laser device 14 includes an energy sensor 154 1 on the laser optical path behind the amplifier 110 1 .
  • the energy sensor 154 a photoelectric element or the like can be used.
  • FIG. 18 is a block diagram illustrating a configuration example of the energy sensor.
  • Energy sensor 154 1 a photoelectric device 190, an integration circuit 192, an A / D converter 194, comprise constituted.
  • the integration circuit 192 integrates the voltage generated by the photoelectric element 190.
  • the A / D converter 194 converts the analog signal obtained from the integrating circuit 192 into a digital signal.
  • Energy sensor 154 1, the voltage generated by the photoelectric device 190, a material obtained by converting the energy value through the integrating circuit 192 and the A / D converter 194, and transmits to the laser controller 140.
  • Laser controller 140 acquires data from the energy sensors 154 1.
  • the laser controller 140 when the integrated value of the detected energy obtained from the energy sensor 154 1 is equal to or higher than a threshold, determined as "beam there".
  • the integrated value of the detected energy is called “energy integrated value”.
  • FIG. 19 is an explanatory diagram of signal processing when the presence or absence of a beam is detected by an energy sensor.
  • FIG. 19 shows an example of an energy integration value obtained by integrating the sensor output from the energy sensor.
  • the horizontal axis in FIG. 19 represents time, and the vertical axis represents the energy integration value.
  • the process for calculating the energy integral value is similar to the process for calculating the moving average.
  • the energy integration value is a value obtained by integrating the data of the last past period of the sensor output acquired in time series.
  • the energy integration value shown in FIG. 19 is the integration value of the last one second of the time series data obtained from the energy sensor. Therefore, the energy integration value may decrease.
  • a threshold value that is a criterion for determining the presence or absence of a beam is set in advance.
  • the laser controller 140 integrates the sensor output from the energy sensor, and determines that “there is a beam” if the energy integration value is equal to or greater than a threshold value.
  • the laser controller 140 If during the burst period, the laser controller 140, so that the deviation of the energy target value from the energy measurements of the energy sensor 154 1 is small, performs feedback control to issue discharge command to the amplifier power supply 120 1.
  • the laser controller 140 determines beam whether the output of the energy sensor 154 1, when it is determined that "beam there" is a generation self-oscillation.
  • FIG. 20 is a flowchart illustrating an example of a laser control flow applied to the second embodiment. Each step of the flowchart of FIG. 20 is executed by the laser controller 140. 20, the same or similar steps as those in the laser control flow described in FIG. 13 are denoted by the same step numbers, and the description thereof is omitted.
  • step S50 energy control processing is executed instead of step S30 in FIG. That is, if the laser controller 140 determines in step S20 that the burst is on, the process proceeds to step S50.
  • step S50 the laser controller 140 performs energy control, which is an example of beam control.
  • the laser device 14 performs energy control as laser beam beam parameter control and self-oscillation monitoring processing in conjunction with on / off switching of a burst signal. Switches.
  • FIG. 21 is a flowchart illustrating an example of an energy control flow performed during a burst period. Each step of the flowchart of FIG. 21 is executed by the laser controller 140. Before describing each step in detail, an outline of the energy control flow shown in FIG. 21 will be described.
  • Laser controller 140 measures laser energy when it is in a burst-on state (step S52). Then, the laser controller 140 calculates a deviation amount between the energy measurement value and the energy target value (step S53), and calculates a discharge output from the deviation amount (step S54). Then, the laser controller 140 issues a discharge output command to the amplifier based on the calculation result of the discharge output (step S55).
  • the discharge output command may be executed for each amplifier, or the energy in the final amplifier may be measured and the discharge output command may be issued to a plurality of amplifiers.
  • step S52 to step S55 the processing from step S52 to step S55 is repeated, and when the burst signal is turned off, the energy control flow in FIG. 21 is terminated.
  • step S51 the laser controller 140 determines whether the burst signal is in a burst-on state or a burst-off state.
  • Step S51 may be the determination process of step S20 of FIG.
  • step S51 If the laser controller 140 determines in step S51 that the burst is on, the process proceeds to step S52.
  • step S52 the laser controller 140 takes in data from the energy sensor and measures laser energy.
  • step S53 the laser controller 140 calculates a deviation amount between the energy measurement value measured in step S52 and the energy target value.
  • step S54 the laser controller 140 calculates the discharge output based on the deviation amount calculated in the process of step S53.
  • the laser controller 140 controls the discharge output so that the deviation amount between the energy measurement value and the energy target value is small.
  • step S55 the laser controller 140 issues a discharge output command to the amplifier power supply in accordance with the discharge output calculated in the process of step S54.
  • the laser controller 140 returns to step S51 after the process of step S55, and repeats the processes of step S51 to step S55 until the burst signal is turned off.
  • feedback control of the discharge output command is performed based on the sensor output of the energy sensor.
  • step S51 the laser controller 140 ends the energy control flow of FIG.
  • the output of the energy sensor is integrated in step S42 of FIG.
  • step S43 it is determined whether or not the energy integration value is equal to or greater than a threshold value.
  • self-excited oscillation can be detected during the burst pause period using the mechanism for measuring the energy of the laser beam and executing the energy control as it is.
  • the process in which the laser controller 140 controls the discharge output to the amplifier according to the energy control flow in FIG. 21 corresponds to an example of “a process for controlling beam parameters”.
  • the beam energy of the pulse laser beam output from the amplifier is controlled. That is, the beam parameter controlled according to the energy control flow corresponds to the output energy of the pulse laser beam.
  • Modification 1 In the first embodiment and the second embodiment, the example in which the optical shutter 103 is opened and closed in conjunction with the burst command has been described. However, when the invention is implemented, the optical shutter 103 may be omitted. For example, an oscillation trigger from the laser controller 140 to the master oscillator 102 may be output in conjunction with the burst command, and the output of the pulsed laser light from the master oscillator 102 may be stopped during the burst pause period.
  • the excitation intensity of the amplifier may be controlled so that the excitation intensity of the amplifier in the burst pause period is weaker than the excitation intensity of the amplifier in the burst period. Generation of self-oscillation can be suppressed by weakening the excitation intensity of the amplifier. In addition to the self-excited oscillation monitoring function described in the first and second embodiments, it is possible to control the excitation intensity of the amplifier in conjunction with the burst signal.
  • FIG. 22 is a timing chart showing an example of the strong excitation signal S6 and the weak excitation signal S7 that the laser controller 140 inputs to the amplifier power sources 120 1 to 120 4 of the amplifiers 110 1 to 110 4 .
  • the laser controller 140 supplies the strong excitation signal S6 to the amplifier power supplies 120 1 to 120 during the period when the burst permission signal S1 is input from the exposure apparatus controller 70 via the EUV light generation control system 40. it may be input to 120 4.
  • each of the amplifier power supplies 120 1 to 120 4 inputs a high frequency voltage for strong excitation to the amplifiers 110 1 to 110 4 .
  • the rising timing of the burst-on signal S3 may be a timing that is a predetermined time Ts after the rising timing of the strong excitation signal S6.
  • the PWM system is a modulation system that changes the duty ratio of a voltage pulse.
  • the laser controller 140 may change the duty ratio of voltage pulses supplied from the amplifier power supplies 120 1 to 120 4 to the amplifiers 110 1 to 110 4 by strong excitation control and weak excitation control.
  • the duty ratio means the ratio of the pulse width to one period when a periodic pulse wave is emitted, and is represented by the following formula (1).
  • D ⁇ / T (1)
  • D represents the duty ratio
  • ⁇ represents the pulse width
  • T represents the time length of one cycle. For example, when the period T is 10 microseconds [ ⁇ s] and the pulse width ⁇ is 1 microsecond [ ⁇ s], the duty ratio D is 0.1 (10%) from the equation (1).
  • FIG. 23 shows an example of the excitation signal (S6 or S7) input from the laser controller 140 to the amplifier power supplies 120 1 to 120 4 when the duty ratio is ⁇ / T.
  • FIG. 24 shows an example of excitation voltages supplied from the amplifier power supplies 120 1 to 120 4 to the amplifiers 110 1 to 110 4 in the case of the excitation signals shown in FIG.
  • a rectangular wave signal may be input from the laser controller 140 to the amplifier power supplies 120 1 to 120 4 .
  • intermittent RF voltages as shown in FIG. 24 are supplied from the amplifier power supplies 120 1 to 120 4 to the amplifiers 110 1 to 110 4 .
  • FIG. 25 shows a case where the duty ratio specified by the weak excitation signal S7 in the weak excitation period Twk is 20% and the duty ratio specified by the strong excitation signal S6 in the strong excitation period Tst is 50%.
  • FIG. 6 is a diagram illustrating an RF voltage supplied from power supplies 120 1 to 120 4 to amplifiers 110 1 to 110 4 .
  • FIG. 26 shows each amplifier when the duty ratio specified by the weak excitation signal S7 in the weak excitation period Twk is 20% and the duty ratio specified by the strong excitation signal S6 in the strong excitation period Tst is 100%.
  • FIG. 6 is a diagram showing an RF voltage supplied from the power sources 120 1 to 120 4 to the amplifiers 110 1 to 110 4 .
  • the excitation intensity of the laser medium can be changed by changing the duty ratio of the RF voltage applied between the electrodes included in the amplifiers 110 1 to 110 4 .
  • the duty ratio in the weak excitation period Twk is made smaller than the duty ratio in the strong excitation period Tst.
  • the excitation energy supplied to the amplifiers 110 1 to 110 4 per unit time in the weak excitation period Twk can be made smaller than that in the strong excitation period Tst.
  • the RF frequency of an amplifier using CO 2 gas as an amplification medium is typically 10 to 100 MHz.
  • the PWM frequency is preferably set to be sufficiently smaller than the RF frequency of the amplifier.
  • the repetition frequency of the pulse laser beam output from the master oscillator 102 may be set to, for example, 100 kHz and synchronized with the PWM period T.
  • FIG. 27 shows an example of the RF voltage supplied from the amplifier power supplies 120 1 to 120 4 to the amplifiers 110 1 to 110 4 in the potential control method.
  • the amplitude specified by the weak excitation signal S7 may be smaller than the amplitude specified by the strong excitation signal S6.
  • the amplitude of the RF voltage supplied from the amplifier power supplies 120 1 to 120 4 to the amplifiers 110 1 to 110 4 may be reduced during the weak excitation period Twk.
  • the amplitude of the RF voltage in the weak excitation period Twk may be made smaller than the amplitude of the RF voltage in the strong excitation period Tst.
  • the excitation energy supplied to the amplifiers 110 1 to 110 4 per unit time in the weak excitation period Twk can be made smaller than that in the strong excitation period Tst.
  • FIG. 28 shows an example of the RF voltage supplied from the amplifier power supplies 120 1 to 120 4 to the amplifiers 110 1 to 110 4 when the PWM method and the potential control method are combined.
  • combining the PWM method and the potential control method increases the dynamic range of excitation intensity control.
  • the RF voltage supplied from the amplifier power supplies 120 1 to 120 4 to the amplifiers 110 1 to 110 4 can be adjusted more freely.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lasers (AREA)
  • X-Ray Techniques (AREA)

Abstract

Selon un aspect de la présente invention, un dispositif laser comprend : un oscillateur maître ; au moins un amplificateur disposé sur un chemin optique de première lumière laser pulsée émise par l'oscillateur maître ; un capteur disposé sur un chemin optique de seconde lumière laser pulsée émise par ledit amplificateur ; et un dispositif de commande de laser. Le dispositif de commande de laser provoque une oscillation en rafales du dispositif laser sur la base d'un signal de salve provenant d'un dispositif externe, et exécute un processus de commande d'un paramètre de faisceau sur la base d'un signal de sortie de capteur obtenu à partir du capteur dans une période de salve, ainsi qu'un processus de détection de lumière d'auto-oscillation provenant de l'amplificateur sur la base d'un signal de sortie de capteur obtenu à partir du capteur dans une période de pause de salve.
PCT/JP2017/001947 2017-01-20 2017-01-20 Dispositif laser et système de génération de rayonnement ultraviolet extrême WO2018134971A1 (fr)

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US16/429,090 US11539180B2 (en) 2017-01-20 2019-06-03 Laser apparatus and extreme ultraviolet light generation system

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WO2023152805A1 (fr) * 2022-02-08 2023-08-17 ギガフォトン株式会社 Dispositif laser, procédé de réglage de trajet de lumière et procédé de fabrication de dispositif électronique

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WO2023152805A1 (fr) * 2022-02-08 2023-08-17 ギガフォトン株式会社 Dispositif laser, procédé de réglage de trajet de lumière et procédé de fabrication de dispositif électronique

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