WO2018131288A1 - Circuit électronique, circuit imageur, et procédé de détection/réception de lumière - Google Patents

Circuit électronique, circuit imageur, et procédé de détection/réception de lumière Download PDF

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Publication number
WO2018131288A1
WO2018131288A1 PCT/JP2017/041287 JP2017041287W WO2018131288A1 WO 2018131288 A1 WO2018131288 A1 WO 2018131288A1 JP 2017041287 W JP2017041287 W JP 2017041287W WO 2018131288 A1 WO2018131288 A1 WO 2018131288A1
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Prior art keywords
unit
terahertz wave
visible light
output signal
light receiving
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PCT/JP2017/041287
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English (en)
Japanese (ja)
Inventor
将之 池辺
栄一 佐野
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国立大学法人北海道大学
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Priority to JP2018561832A priority Critical patent/JP6953023B2/ja
Publication of WO2018131288A1 publication Critical patent/WO2018131288A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation

Definitions

  • the present invention belongs to a technical field of an electronic circuit, an imaging circuit, and a detection / light receiving method, and more specifically, an electronic circuit and an imaging capable of detecting or receiving both a terahertz wave having a terahertz band frequency and visible light. It belongs to the technical field of detection / light-receiving methods executed in circuits and electronic circuits.
  • terahertz waves having a frequency in the terahertz band 100 gigahertz to 10 terahertz
  • a frequency between millimeter waves and far-infrared light has been actively conducted.
  • an element that converts the terahertz wave, which is a physical quantity, into an electric signal is required. More specifically, for example, an element (for example, a bolometer) that converts the terahertz wave into heat and reads a change in resistance value caused by the heat is required.
  • Non-Patent Document 1 using a negative feedback differential amplifier circuit including a transistor having an operating frequency slower than the frequency of the terahertz wave, an envelope corresponding to the strength of the terahertz wave.
  • a circuit that outputs an output signal obtained by amplifying a line component with an appropriate offset is proposed.
  • Non-Patent Document 1 it is possible to convert a terahertz wave into an electrical signal to obtain, for example, a corresponding image output. There was a problem that the output could not be adapted.
  • the present invention has been made in view of the above problems, and an example of the problem is that the output signal corresponding to the terahertz wave and the output signal corresponding to the visible light are adapted to be output. It is an object of the present invention to provide an electronic circuit and an imaging circuit that can be realized without enlarging the circuit scale by using an integrated electronic circuit, and a detection / light receiving method executed in the electronic circuit.
  • a terahertz wave detection unit that detects a terahertz wave having a frequency in the terahertz band and outputs a first output signal indicating the intensity of the terahertz wave; and an intensity of the visible light that receives visible light
  • the terahertz wave detection unit includes a reception antenna that receives the terahertz wave, an amplifier unit connected to the reception antenna, a negative feedback amplifier that is connected to the amplifier unit and outputs the first output signal, etc.
  • a negative feedback amplifier unit wherein the visible light receiving unit is connected to the light receiving unit such as a photodiode that receives the visible light, and the second output signal.
  • the amplifier unit configured to output and the negative feedback amplifier unit connected to the amplifier unit, wherein the switching unit includes a bias voltage applied to the light receiving unit and the amplifier unit, and the negative feedback amplifier.
  • the invention according to claim 7 includes a plurality of electronic circuits according to any one of claims 1 to 6 integrated therein.
  • the invention according to claim 8 includes a terahertz wave detection unit that detects a terahertz wave having a frequency in the terahertz band and outputs a first output signal indicating the intensity of the terahertz wave;
  • a visible light receiving unit that receives light and outputs a second output signal indicating the intensity of the visible light is a detection / light receiving method executed in an electronic circuit formed on one substrate, the terahertz
  • the wave detector includes a receiving antenna that receives the terahertz wave, an amplifier connected to the receiving antenna, and a negative feedback amplifier such as a negative feedback amplifier that is connected to the amplifier and outputs the first output signal
  • the visible light receiving unit includes a light receiving unit such as a photodiode that receives the visible light, and the amplifier that is connected to the light receiving unit and outputs the second output signal.
  • the negative feedback amplifier unit connected to the amplifier unit, and by switching the bias voltage applied to the light receiving unit and the amplifier unit and the positive input voltage to the negative feedback amplifier unit And a switching step of switching between the operation of the terahertz wave detection unit and the operation of the visible light receiving unit.
  • the amplifier unit and the negative feedback amplifier unit Since the first output signal or the second output signal is output by switching their operations, the first output signal indicating the intensity of the terahertz wave and the second output signal indicating the intensity of the visible light are adapted. Output can be realized without increasing the circuit scale by an integrated electronic circuit.
  • the invention according to claim 2 is the electronic circuit according to claim 1, wherein the negative feedback amplifier unit as the terahertz wave detection unit is a feedback signal in the negative feedback amplifier unit. Is output as the first output signal.
  • the terahertz wave detection unit since the feedback signal in the negative feedback amplifier unit as the terahertz wave detection unit is output as the first output signal, the terahertz wave
  • the first output signal that accurately indicates the intensity of the second output signal can be adapted to the second output signal and output.
  • the amplifier unit includes a cascode-connected transistor, and the visible light receiving unit is The second output signal is output from a connection point between the transistors in the cascode connection.
  • the amplifier unit in addition to the operation of the invention described in claim 1 or 2, includes a cascode-connected transistor, and the second output signal as the visible light receiving unit is Since the signal is output from the connection point between the transistors in the cascode connection, the second output signal accurately indicating the intensity of visible light can be adapted to the first output signal and output.
  • the switching unit includes the bias voltage and the positive input voltage. Is switched at predetermined time intervals to switch between the operation of the terahertz wave detection unit and the operation of the visible light receiving unit.
  • the bias voltage and the positive input voltage are switched every predetermined time. Since visible light can be detected or received at the same time, the first output signal and the second output signal can be accurately matched and output.
  • the switching unit alternately switches the bias voltage and the positive input voltage every time.
  • the operation of the terahertz wave detecting unit and the operation of the visible light receiving unit are alternately switched.
  • the bias voltage and the positive input voltage are alternately switched every predetermined time, so that the terahertz wave and the visible light are detected equally.
  • the first output signal and the second output signal can be appropriately matched and output.
  • the invention described in claim 6 further includes a changing unit such as a control unit for changing the preset time in the electronic circuit described in claim 5.
  • the default time for switching the bias voltage and the positive input voltage can be changed. And visible light reception can be switched.
  • the amplifier unit and the negative feedback amplifier unit are shared and their operations are switched to change the first output signal or the second output signal. Output the output signal.
  • the first output signal indicating the intensity of the terahertz wave and the second output signal indicating the intensity of the visible light are adapted to be output without increasing the circuit scale by the integrated electronic circuit. be able to.
  • FIGS. 5 is an embodiment and a modification when the present invention is applied to an image sensor.
  • the “single chip” means that the light receiving unit and the detection unit are formed on one substrate by using, for example, a photolithography technique.
  • FIGS. 1 to 3 are block diagram illustrating a schematic configuration of an image sensor including a pixel circuit according to the embodiment
  • FIG. 2 is a diagram illustrating a specific circuit configuration example of the pixel circuit
  • FIG. 3 is a diagram illustrating the pixel circuit. It is a top view which shows the example of manufacture of these.
  • the image sensor 100 includes a pixel circuit array AL including a plurality of pixel circuits P according to the embodiment in an array, an image processing unit PS, and a control unit C.
  • a pixel circuit array AL including a plurality of pixel circuits P according to the embodiment in an array
  • an image processing unit PS and a control unit C.
  • each pixel circuit P corresponds to an example of an “electronic circuit” according to the present invention
  • the control unit C corresponds to an example of a “change unit” according to the present invention.
  • the control unit C generates a control signal Sc for alternately executing the operation for detecting the terahertz wave and the operation for receiving visible light in each pixel circuit P for the same time period. Output to.
  • the time of each operation in this case is, for example, 1 millisecond as shown in FIGS. 5 and 7 described later.
  • each pixel circuit P which comprises the pixel circuit array AL which concerns on embodiment performs either one of the operation
  • the first output signal Sp1 indicating the intensity of the detected terahertz wave or the second output signal Sp2 indicating the intensity of the received visible light is generated and output to the image processing unit PS.
  • the first output signal Sp1 and the second output signal Sp2 are analog signals.
  • the image processing unit PS performs preset image processing on the first output signal Sp1 or the second output signal Sp2, and outputs an image output signal Gout as the entire image sensor 100.
  • the control unit C generates the control signal Sc for controlling the operation of each pixel circuit P and the switching operation thereof, outputs the control signal Sc to each pixel circuit P, and performs the image processing in the image processing unit PS.
  • a control signal Scg for controlling the image sensor 100 is generated and output to the image processing unit PS, whereby the operation of the image sensor 100 is comprehensively controlled.
  • one pixel circuit P includes a switching unit CH, a terahertz wave detection unit 3, a negative feedback amplifier 4, and a visible light receiving unit 5.
  • the terahertz wave detection unit 3, the negative feedback amplifier 4, and the visible light receiving unit 5 are shared by the operation for detecting the terahertz wave according to the embodiment and the operation for receiving the visible light according to the embodiment. Is done.
  • the negative feedback amplifier 4 corresponds to an example of a “negative feedback amplifier unit” according to the present invention.
  • the visible light receiving unit 5 includes a photodiode PD and a transistor M9 which is an n-type MOSFET (Metal-Oxide-Semiconductor-Field-Effect-Transistor).
  • the anode terminal of the photodiode PD is grounded, and the cathode terminal of the photodiode PD and the source terminal of the transistor M9 are connected. Further, the drain terminal and the gate terminal of the transistor M9 are connected to the switching unit CH.
  • MOSFET Metal-Oxide-Semiconductor-Field-Effect-Transistor
  • the bias voltage Vb2 is applied to the drain terminal of the transistor M9 by the switching unit CH, and the reset voltage Vreset for switching between the operation for detecting the terahertz wave and the operation for receiving visible light according to the embodiment is applied to the gate terminal.
  • the switching unit CH is applied by the switching unit CH. That is, the transistor M9 functions as a switch for switching between the operation for detecting the terahertz wave and the operation for receiving the visible light.
  • the photodiode PD corresponds to an example of the “light receiving unit” according to the present invention.
  • the terahertz wave detection unit 3 includes, for example, a receiving antenna AT including a microstrip patch antenna, a capacitor C1, a resistor R1, transistors M2 and M3 each including an n-type MOSFET, and a p-type MOSFET. And a transistor M1.
  • a matching circuit including a microstrip line (not shown) or the like is provided between the receiving antenna AT and one end of the capacitor C1.
  • the receiving antenna AT receives the terahertz wave and outputs a reception voltage Vin corresponding to the received terahertz wave to one end of the capacitor C1.
  • the resistor R1 is connected between the bias voltage Vb1 and the connection point between the other end of the capacitor C1 and the gate terminal of the transistor M3. Further, the source terminal of the transistor M3 is grounded, and its drain terminal is connected to the source terminal of the transistor M2. Further, the gate terminal of the transistor M2 is connected to the connection point between the source terminal of the transistor M9 and the cathode terminal of the photodiode PD, whereby the gate terminal serves as the photodiode PD and the switch connected in reverse bias. It is connected to the bias voltage Vb2 through the functioning transistor M9. Further, the drain terminal of the transistor M2 is connected to the drain terminal of the transistor M1.
  • the gate terminal of the transistor M1 is connected to the negative feedback amplifier 4, and the source terminal of the transistor M1 is connected to the power supply voltage VDD.
  • the transistor M2 and the transistor M3 are in a so-called cascode connection, and these constitute a so-called cascode source grounded amplifier having the transistor M1 as a load.
  • the cascode type grounded source amplifier is set so that the response is slower than the terahertz wave.
  • “slow response” specifically means that “the cutoff frequency of the transistor M3 is lower than the frequency of the terahertz wave”.
  • the “response is slow” refers to a state in which the response as a cascode-type source grounded amplifier is not fast enough to output a response signal having a waveform that maintains a frequency according to the terahertz wave.
  • the connection point between the transistor M2 and the transistor M3 is connected to the output terminal OUT2.
  • the output terminal OUT2 indicates the intensity of visible light received by the photodiode PD and the second output signal according to the embodiment. Sp2 is output.
  • the negative feedback amplifier 4 is a low-frequency correction negative feedback amplifier for controlling the offset value of the second output signal Sp2 output from the terahertz wave detection unit 3.
  • the negative feedback amplifier 4 includes a capacitor C2, a transistor M6, a transistor M7, and a transistor M8 each made of an n-type MOSFET, and a transistor M4 and a transistor M5 each made of a p-type MOSFET. In this configuration, the source terminal and gate terminal of the transistor M8 are grounded, so that the transistor M8 functions as a current source driven by a leak current in the subthreshold region.
  • the transistor M6 and the transistor M7 form a differential pair, each source terminal is connected to the drain terminal of the transistor M8, and each drain terminal is connected to the drain terminals of the transistor M4 and the transistor M5, respectively.
  • the bias voltage Vb2 from the switching unit CH is applied to the gate terminal of the transistor M6, the gate terminal of the transistor M7 serves as a feedback output, the output terminal OUT1, the drain terminal of the transistor M2, and the source terminal of the transistor M1.
  • the transistor M4 and the transistor M5 constitute an active load, the respective drain terminals are connected to the drain terminals of the transistors M6 and M7, and the respective source terminals are connected to the power supply voltage VDD.
  • the negative feedback amplifier 4 having the above configuration constitutes a differential amplifier having a very slow response for adjusting the offset value included in the output signal Sp2 from the terahertz wave detection unit 3 by negative feedback.
  • the response is very slow specifically means “it is a very slow response of the order of several hundred hertz or less corresponding to the direct current component”, in other words, the negative feedback amplifier 4.
  • the pixel circuit array AL is manufactured by integrating a plurality of pixel circuits P into one chip on one substrate in the manner illustrated in the left of FIG.
  • An example of a specific size of the substrate is 1,035 micrometers ⁇ 745 micrometers as shown in FIG.
  • “Row” is an integrated circuit unit that controls switching of each row included in the pixel circuit array AL
  • “Column” similarly controls switching of each column included in the pixel circuit array AL.
  • Integrated circuit section On the other hand, each pixel circuit P constituting the pixel circuit array AL is manufactured by integrating the receiving antenna AT, the photodiode PD, and the like in the manner illustrated in the right side of FIG.
  • One example of the size on the pixel circuit array AL occupied by one pixel circuit P is 250 micrometers ⁇ 180 micrometers as shown in FIG.
  • FIGS. 4 and 5 are diagram illustrating a specific circuit configuration example when the pixel circuit P detects a terahertz wave
  • FIG. 5 is a timing chart illustrating an operation when the terahertz wave is detected.
  • the elements constituting the negative feedback amplifier 4 are collectively symbolized.
  • control unit C (see FIG. 1) according to the embodiment performs the same time (for example, 1 millisecond) between the operation of detecting the terahertz wave and the operation of receiving visible light in the pixel circuit P according to the embodiment.
  • the control signal Sc to be executed alternately is generated and output to each pixel circuit P.
  • the switching unit CH to which the control signal Sc is input is the transistor M9. Is set to the power supply voltage VDD (see “Vreset” in FIG. 5), and the bias voltage Vb2 applied to the drain terminal of the transistor M9 and the positive input terminal of the negative feedback amplifier 4 is set as follows. An arbitrary voltage other than the power supply voltage VDD (for example, 0.6 volts) is set.
  • the transistor M9 is turned on.
  • the bias voltage Vb2 is set as described above, the reception voltage Vin from the reception antenna AT corresponding to the terahertz wave is an AC voltage centered on the bias voltage Vb1 passing through the resistor R1 via the capacitor C1.
  • a signal is input to the gate terminal of the transistor M3.
  • a bias voltage Vb2 (for example, 0.6 volts) is input to the gate terminal of the transistor M2 via the transistor M9 that is turned on.
  • the cathode terminal of the photodiode PD is connected to the node (A) which is the gate terminal.
  • the transistor M9 since the photocurrent flowing through the photodiode PD is a minimal current of nanoampere, the transistor M9 is in the on state. For example, the voltage of the node (A) is hardly affected (see “Point A” in FIG. 5).
  • the transistor M3 When the response of the transistor M3 constituting the high-gain cascode-type grounded-source amplifier with the transistor M1 as a load is slower than the terahertz wave with the transistor M2, the transistor M3 responds to the signal frequency of the terahertz wave. Instead of this, a signal in response to the intensity (strength) of the terahertz wave is amplified and output (see “Vin” in FIG. 5). At this time, the amplitude of the reception voltage Vin (see “a” in FIG. 5) increases when the intensity of the terahertz wave is high, and decreases when the intensity is low.
  • the negative feedback amplifier 4 uses a bias voltage Vb2 (for example, 0.6 volts) as a positive input voltage, a first output signal Sp1 from the terahertz wave detector 3 as a negative input voltage, and its output terminal is the gate of the transistor M1. Since it is connected to the terminal, the active load by the transistor M1 of the terahertz wave detection unit 3 is controlled. At this time, the negative feedback amplifier 4 controls the active load constituted by the transistor M4 and the transistor M5 so that the first output signal Sp1 approaches the bias voltage Vb2 (for example, 0.6 volts). As described above, the response speed of the negative feedback amplifier 4 is set to be extremely slow with respect to the terahertz wave. As a result, the negative feedback amplifier 4 does not respond to the signal itself that responds to the above-described intensity (strength) of the terahertz wave, but responds to a voltage level whose amplitude is smoothed.
  • Vb2 for example, 0.6 volts
  • the operation of the pixel circuit P shown in FIG. 4 is summarized as follows.
  • the transistor M9 When the transistor M9 is always turned on when the terahertz wave is detected and the bias voltage Vb1 and the bias voltage Vb2 are set, the received voltage from the receiving antenna AT is set.
  • the DC component of Vin is cut by the capacitor C1, biased by the bias voltage Vb1, and input to the gate terminal of the transistor M3.
  • an envelope component indicating the strength of the terahertz wave is amplified by a cascode source grounded amplifier including the transistor M1, the transistor M2, and the transistor M3, which has a slower response than the terahertz wave, and is output as the first output signal Sp1 ( (See “Sp1” in FIG. 5).
  • the negative feedback amplifier 4 having a very slow response to the terahertz wave controls the transistor M1 by negative feedback so as to operate as a voltage follower that transmits the bias voltage Vb2 as the first output signal Sp1.
  • the operation of the negative feedback amplifier 4 is extremely slow with respect to the terahertz wave.
  • the strength of the envelope of the terahertz wave output to the first output signal Sp1 is maintained, and the DC component is biased. It becomes equal to the voltage Vb2. That is, the pixel circuit P at the time of detecting the terahertz wave operates so as to output the first output signal Sp1 having the bias voltage Vb2 as an offset value and only the intensity of the terahertz wave as an amplitude.
  • the value of the bias voltage Vb1 which is the voltage at the gate terminal of the transistor M2, does not change and is not affected.
  • a signal corresponding to the strength of the terahertz wave is amplified and output as the first output signal Sp1 with the bias voltage Vb2 (for example, 0.6 volts) as an offset value. (See “Sp1” in FIG. 5).
  • FIG. 6 is a diagram illustrating a specific circuit configuration example when the pixel circuit according to the embodiment receives visible light
  • FIG. 7 is a timing chart illustrating an operation when the visible light is received.
  • the switching unit to which the control signal Sc is input sets the reset voltage Vreset of the gate terminal of the transistor M9 to the power supply voltage VDD for a preset T seconds (for example, 10 nanoseconds), and thereafter until the visible light receiving operation is terminated (ie, for example,
  • the bias voltage Vb2 applied to the drain terminal of the transistor M9 and the positive input terminal of the negative feedback amplifier 4 is set to 0 volts (for 1 millisecond to 10 nanoseconds) (see “Vreset” in FIG. 7). Is set to the power supply voltage VDD.
  • the transistor M9 is turned on only for that time.
  • the voltage of the node (A) which is the gate terminal of the transistor M2 is a value obtained by subtracting the threshold voltage Vth (M9) of the transistor M9 from the power supply voltage VDD as shown in FIG.
  • the bias voltage Vb2 is set as described above, the reception voltage Vin from the reception antenna AT corresponding to the terahertz wave is an AC voltage centered on the bias voltage Vb1 passing through the resistor R1 via the capacitor C1.
  • a signal is input to the gate terminal of the transistor M3.
  • the transistor M9 is turned off.
  • the voltage at the node (A) is successively reduced from the value obtained by subtracting the threshold voltage Vth (M9) from the power supply voltage VDD by the photocurrent corresponding to the light receiving intensity from the photodiode PD connected to the reverse bias. Go.
  • the degree of decrease changes according to the received light intensity (refer to “Point A” in FIG. 7), and this sequential change in voltage is amplified by the transistor M2.
  • the transistors M2 and M3 form a so-called source follower circuit, and form an amplifier having a gain of “1” or less. Therefore, the output of this amplifier becomes the second output signal Sp2 having a voltage corresponding to the sequential change of the voltage of the node (A).
  • the transistors M2 and M3 operate with the voltage at the drain terminal of the transistor M2 as the power supply voltage VDD in the source follower circuit formed by them.
  • the second output signal Sp2 from the source follower circuit outputs according to the voltage of the node (A).
  • This output has a voltage obtained by subtracting the threshold voltage Vth (M2) of the transistor M2 from the voltage of the node (A), as shown as “Sp2” in FIG.
  • the drain terminal of the transistor M3 is connected to the output terminal OUT2
  • the voltage (power supply) fluctuation at the node (A) is large with respect to the amplitude of the terahertz wave
  • the impact of is small.
  • the influence of the reception voltage Vin on the second output signal Sp2 can be further reduced by making the gate width of the transistor M2 larger than the gate width of the transistor M3.
  • the bias voltage Vb2 is set to the power supply voltage VDD, and as a result, the transistor M9 is turned on. It will be operated as a time-sequential (ie, turned on / off over time) digital switch.
  • the transistor M9 is turned on for a certain time (for example, 10 nanoseconds) and then turned off, the threshold voltage Vth (M9) of the transistor M9 from the power supply voltage VDD is applied to the node (A) shown in FIG. Reduced charge is retained.
  • the voltage at the node (A) when the light intensity of visible light is increased and the photocurrent of the photodiode PD is increased, the discharge at the node (A) is accelerated. On the other hand, when the light intensity becomes weak and the photocurrent becomes small, the discharge at the node (A) is delayed. As shown in FIG. 7, when 1 millisecond, which is the end timing of the visible light receiving operation, has elapsed, the voltage of the node (A) changes in accordance with the intensity of the light intensity.
  • a preset voltage for example, 0.5 volts
  • the transistor M1 is driven so that the node (B) shown in FIG. At this time, the transistor M2 and the transistor M3 operate as a source follower circuit, and as a result, the second output signal Sp2 according to the voltage of the node (A) is output. If the voltage of the second output signal Sp2 is detected when 1 millisecond, which is the end timing of the visible light receiving operation, is detected, the intensity of visible light at that time is, for example, the output voltage P1 and output voltage P2 shown in FIG. Alternatively, it can be detected as any one value of the output voltage P3.
  • the inside of the terahertz wave detection unit 3 Since the first output signal Sp1 or the second output signal Sp2 is output by switching their operations while sharing the transistor M2 and the like and the negative feedback amplifier 4, the first output signal Sp1 indicating the intensity of the terahertz wave and the visible light
  • the second output signal Sp2 indicating the intensity of the signal can be adapted and output without being enlarged by an integrated electronic circuit.
  • the feedback signal in the negative feedback amplifier 4 used for the terahertz wave detection operation is output as the first output signal Sp1
  • the first output signal Sp1 accurately indicating the intensity of the terahertz wave is adapted to the second output signal Sp2. Can be output.
  • the terahertz wave detection unit 3 includes a transistor M2 and a transistor M3 connected in cascode, and the second output signal Sp2 as a visible light receiving operation is output from the connection point between the transistor M2 and the transistor M3 in the cascode connection.
  • the second output signal Sp2 accurately indicating the intensity of visible light can be adapted to the first output signal Sp1 and output.
  • the bias voltage Vb2 and the positive input voltage of the negative feedback amplifier 4 are switched every predetermined time (for example, 1 millisecond), so that the terahertz wave and the visible light can be detected or received simultaneously, so that the first output signal Sp1 The second output signal Sp2 can be accurately matched and output.
  • the bias voltage Vb2 and the positive input voltage of the negative feedback amplifier 4 are alternately switched every predetermined time, the first output signal Sp1 and the second output signal Sp2 can be detected or received evenly by the terahertz wave and the visible light. Can be appropriately matched and output.
  • the control unit C may be configured so that the operation time for detecting the terahertz wave and the operation time for receiving visible light are variable.
  • it may be variable by an operation from an operation unit (not shown), or may be configured to be automatically changed at a time according to the usage mode of the image sensor 100.
  • the time for detecting the terahertz wave and the time for receiving visible light that is, the bias voltage Vb2 and the positive input voltage of the negative feedback amplifier 4 are set in advance.
  • terahertz wave detection and visible light reception can be switched according to the application.
  • the time for detecting the terahertz wave and the time for receiving the visible light are the same, but other than this, for example, for the use of the image sensor 100. Depending on the time, each time may be different.
  • each pixel circuit P and the switching operation thereof are controlled via the switching unit CH in each pixel circuit P. You may comprise so that operation
  • movement may be controlled.
  • control unit C may be realized by the operation of a CPU or the like by a computer program.
  • the present invention can be used in the technical field of the image sensor 100 including the pixel circuit P, and particularly remarkable when applied to the field of image sensing for the purpose of downsizing the circuit. Effects can be obtained.

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  • Spectroscopy & Molecular Physics (AREA)
  • Computer Hardware Design (AREA)
  • Signal Processing (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Multimedia (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
  • Amplifiers (AREA)

Abstract

La présente invention concerne un circuit de pixels pouvant prendre en charge des ondes de l'ordre du térahertz et en lumière visible sans accroître l'échelle du circuit. Selon la présente invention, un transistor (M9) et une photodiode (PD) de commutateur sont connectés à la borne de grille d'un transistor (M2) de polarisation d'un amplificateur de type cascode pour la détection d'ondes de l'ordre du térahertz. L'entrée de l'amplificateur de type cascode sert de polarisation. Un amplificateur à rétroaction négative (4) pour le réglage de décalage reçoit une sortie décalée d'une tension d'alimentation électrique (VDD). Un deuxième signal de sortie (Sp2) correspondant à l'intensité de la lumière visible est émis par un point de connexion entre le transistor (M2) et le transistor (M3).
PCT/JP2017/041287 2017-01-10 2017-11-16 Circuit électronique, circuit imageur, et procédé de détection/réception de lumière WO2018131288A1 (fr)

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CN111811647A (zh) * 2020-07-16 2020-10-23 东南大学 一种高线性度cmos太赫兹探测器前端电路

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