WO2018124459A1 - Composé pérovskite et son procédé de préparation, cellule solaire comprenant un composé pérovskite et son procédé de fabrication - Google Patents

Composé pérovskite et son procédé de préparation, cellule solaire comprenant un composé pérovskite et son procédé de fabrication Download PDF

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WO2018124459A1
WO2018124459A1 PCT/KR2017/012676 KR2017012676W WO2018124459A1 WO 2018124459 A1 WO2018124459 A1 WO 2018124459A1 KR 2017012676 W KR2017012676 W KR 2017012676W WO 2018124459 A1 WO2018124459 A1 WO 2018124459A1
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substrate
electrode
layer
tio
solar cell
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PCT/KR2017/012676
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English (en)
Korean (ko)
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송명관
신종문
정수정
김창수
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한국기계연구원
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Priority claimed from KR1020160181477A external-priority patent/KR20180077402A/ko
Priority claimed from KR1020160181514A external-priority patent/KR102197547B1/ko
Priority claimed from KR1020170085520A external-priority patent/KR101963252B1/ko
Priority claimed from KR1020170085536A external-priority patent/KR102223890B1/ko
Application filed by 한국기계연구원 filed Critical 한국기계연구원
Publication of WO2018124459A1 publication Critical patent/WO2018124459A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G29/00—Compounds of bismuth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G30/00—Compounds of antimony
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/90—Antimony compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/94—Bismuth compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a perovskite compound, a method for producing the same, a solar cell including the perovskite compound and a method for producing the same.
  • Solar cells are a technology field that is attracting attention at the present time when there is an urgent need for alternative energy as a means for converting solar energy into electrical energy.
  • silicon-based solar cells include polycrystalline silicon, monocrystalline silicon, and thin-film silicon solar cells, among which polycrystalline silicon is mainly commercialized.
  • the silicon crystals have to be heated and melted to a high temperature to form a predetermined thickness or more, and then the crystals must be gradually grown.
  • Perovskite materials are attracting attention as a substitute for silicon materials because they have an ideal band gap and high light absorption for converting light into electricity.
  • the solar cell using the perovskite material can be implemented in a relatively simple and less expensive than using a silicon crystal, it can compensate for the disadvantages of the silicon-based solar cell in terms of manufacturing process.
  • the efficiency of the solar cell is higher than the initial development stage, and thus it is recognized as an advantageous material in terms of efficiency improvement.
  • the perovskite material is vulnerable to moisture tends to decrease the efficiency rapidly over time, there is a problem that the durability is weak at high temperatures.
  • the perovskite material has a problem in terms of toxicity because heavy metals such as Pb is used, there is a certain restriction in using as a solar cell material.
  • an object of the present invention is to provide a high efficiency solar cell and a method of manufacturing the same using the perovskite compound and a method for producing the same according to an embodiment of the present invention.
  • an object of the present invention is to provide a highly stable perovskite compound, a method for producing the same, a solar cell and a method for producing the same.
  • an object of the present invention is to provide a perovskite compound, a method for producing the same, a solar cell, and a method for manufacturing the same, which are easy and economical to manufacture.
  • an object of the present invention is to provide an environmentally friendly perovskite compound and a method for manufacturing the same, a solar cell comprising the perovskite compound and a method for producing the same.
  • a perovskite compound represented by the following formula is provided.
  • X FA (CH (NH 2 ) 2 ), MA (CH 3 NH 2 ), Cs, Rb, Na, K, Li
  • Z is one of F, I, Br, and Cl
  • the perovskite compound has a triclinic crystal structure.
  • the first electrode A light absorbing layer formed on the first electrode; And a second electrode formed on the light absorbing layer, wherein the light absorbing layer is provided with a solar cell including a perovskite compound represented by the following formula.
  • X FA (CH (NH 2 ) 2 ), MA (CH 3 NH 2 ), Cs, Rb, Na, K, Li
  • Z is one of F, I, Br, and Cl
  • the perovskite compound has a triclinic crystal structure.
  • the first electrode may include a first substrate selected from a glass substrate, an indium tin oxide (ITO) substrate, a fluorine doped tin oxide (FTO) substrate, and a flexible transparent electrode substrate; And a TiO 2 layer formed on the first substrate.
  • ITO indium tin oxide
  • FTO fluorine doped tin oxide
  • the flexible transparent electrode substrate is polyethylene terephthalate (PET), polyethylene sulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), polymethyl methacrylate (PMMA), polyimide (PI), ethylene vinyl Acetate (EVA), amorphous polyethylene terephthalate (APET), polypropylene terephthalate (PPT), polyethylene terephthalate glycerol (PETG), polycyclohexylenedimethylene terephthalate (PCTG), modified triacetylcellulose (TAC), Cycloolefin polymer (COP), cycloolefin copolymer (COC), dicyclopentadiene polymer (DCPD), cyclopentadiene polymer (CPD), polyarylate (PAR), polyetherimide (PEI), polydimethylsilone It may be formed of a polymer substrate selected from the group consisting of phosphine (PDMS), silicone resin, fluorine resin and modified epoxy resin
  • the TiO 2 layer is a blocking TiO 2 layer; And a mesoporous TiO 2 layer formed on the blocking TiO 2 layer.
  • the first electrode may further include a ZrO 2 layer formed on the TiO 2 layer.
  • the second electrode may include carbon.
  • the step of preparing a XZ compound powder and YZ 3 compound powder comprising the step of preparing a compound represented by the following formula.
  • X FA (CH (NH 2 ) 2 ), MA (CH 3 NH 2 ), Cs, Rb, Na, K, Li
  • Z is one of F, I, Br, and Cl
  • the compound represented by the above formula may have a triclinic crystal structure.
  • the concentration of the XZ compound may be 1 mol, and the concentration of the YZ 3 compound may be 3 mol.
  • forming a first electrode Forming a light absorbing layer on the first electrode; And forming a second electrode on the light absorbing layer, wherein the light absorbing layer is provided with a solar cell manufacturing method including a perovskite compound represented by the following formula.
  • X FA (CH (NH 2 ) 2 ), MA (CH 3 NH 2 ), Cs, Rb, Na, K, Li
  • Z is one of F, I, Br, and Cl
  • the perovskite compound has a triclinic crystal structure.
  • the forming of the first electrode may include preparing a first substrate selected from a glass substrate, an indium tin oxide (ITO) substrate, a fluorine doped tin oxide (FTO) substrate, and a flexible transparent electrode substrate; And forming a TiO 2 layer on the first substrate.
  • a first substrate selected from a glass substrate, an indium tin oxide (ITO) substrate, a fluorine doped tin oxide (FTO) substrate, and a flexible transparent electrode substrate.
  • the forming of the first electrode may further include forming a ZrO 2 layer on the TiO 2 layer.
  • the forming of the light absorbing layer may include forming a X a Y b Z c solution; And dropping, spin coating, or screen printing the X a Y b Z c solution on the first electrode.
  • the forming of the X a Y b Z c solution may include preparing an XZ compound powder and a YZ 3 compound powder; Mixing the XZ compound powder and the YZ 3 compound powder to form a mixed powder; Heat-treating the mixed powder to prepare a compound represented by the following formula; And dissolving the heat-treated mixed powder in DMF (dimethyl formamide) or DMSO (dimethyl sulfoxide) solvent.
  • DMF dimethyl formamide
  • DMSO dimethyl sulfoxide
  • X FA (CH (NH 2 ) 2 ), MA (CH 3 NH 2 ), Cs, Rb, Na, K, Li
  • Z is one of F, I, Br, and Cl
  • the compound represented by the above formula may have a triclinic crystal structure.
  • the forming of the light absorbing layer may further include drying the X a Y b Z c solution.
  • the forming of the second electrode may include preparing a second substrate selected from a glass substrate, an indium tin oxide (ITO) substrate, a fluorine doped tin oxide (FTO) substrate, and a flexible transparent electrode substrate; Preparing a carbon powder; Coating the carbon powder on the second substrate; And heat treating the second substrate coated with the carbon powder.
  • ITO indium tin oxide
  • FTO fluorine doped tin oxide
  • the forming of the second electrode may include applying a paste containing carbon on the light absorbing layer.
  • the present invention can provide a highly efficient perovskite compound, a method for producing the same, a solar cell and a method for producing the same.
  • the present invention can provide a highly stable perovskite compound, a method for producing the same, a solar cell and a method for producing the same.
  • the present invention can provide a perovskite compound, a method for producing the same, a solar cell, and a method for manufacturing the same, which are easy and economical to manufacture.
  • the present invention can provide an environmentally friendly perovskite compound, a method for producing the same, a solar cell including the perovskite compound and a method for producing the same.
  • FIG. 1 is a view showing a perovskite compound according to an embodiment of the present invention.
  • FIG. 2 is a photograph of the coating of the perovskite compound formed by the method for producing a perovskite compound according to an embodiment of the present invention.
  • 3 is a bandgap graph of a perovskite compound according to an embodiment of the present invention.
  • FIG. 6 is a view schematically showing a solar cell according to an embodiment of the present invention.
  • FIG. 7 is a photograph of a solar cell according to an embodiment of the present invention.
  • FIG. 8 is a flowchart schematically showing a method of manufacturing a solar cell according to an embodiment of the present invention.
  • FIG. 11 is a graph comparing the efficiency of the solar cell according to the embodiment of the present invention and the solar cell of the prior art.
  • FIG. 12 is a graph comparing the efficiency change of the solar cell according to the prior art (comparative example) and the solar cell according to the embodiment of the present invention over time.
  • FIG. 13 is a view showing a perovskite compound according to an embodiment of the present invention.
  • FIG. 14 is a photograph of a perovskite compound formed by the method for producing a perovskite compound according to an embodiment of the present invention.
  • FIG. 15 is a view schematically showing a solar cell according to an embodiment of the present invention.
  • FIG. 16 is a photograph of a solar cell according to an embodiment of the present invention.
  • FIG. 17 is a flowchart schematically showing a method of manufacturing a solar cell according to an embodiment of the present invention.
  • 19 to 21 is a graph comparing the efficiency according to the thickness change of TiO 2 according to the experimental example of the present invention.
  • FIG. 22 is an AFM photograph of a perovskite compound according to an embodiment of the present invention.
  • Figure 23 is a XRD measurement result showing the structural change before and after heat treatment in the perovskite compound production method according to an embodiment of the present invention.
  • 24 is a view showing the change in light absorbency before and after heat treatment in the perovskite compound manufacturing method according to an embodiment of the present invention.
  • 25 is a schematic view of a solar cell according to an embodiment of the present invention.
  • 26 is a view showing the efficiency of the solar cell according to an embodiment of the present invention.
  • FIG. 27 is a flowchart schematically showing a method of manufacturing a solar cell according to an embodiment of the present invention.
  • FIG. 28 is a view showing a crystal structure of a perovskite compound according to the embodiment of the present invention.
  • 29 shows the theoretical bandgap of a perovskite compound in accordance with an embodiment of the present invention.
  • FIG. 30 is a XRD measurement result diagram showing the structural change before and after heat treatment in the perovskite compound production method according to an embodiment of the present invention.
  • FIG. 31 is a SEM photograph showing structural changes before and after heat treatment in a method of preparing perovskite compound according to an embodiment of the present invention.
  • 32 is a view showing the change in light absorbency before and after heat treatment in the perovskite compound manufacturing method according to an embodiment of the present invention.
  • FIG 33 is a view showing a band gap change before and after heat treatment in the perovskite compound manufacturing method according to an embodiment of the present invention.
  • FIG. 34 is a schematic view of a solar cell according to an embodiment of the present invention.
  • 35 is a flowchart schematically showing a method of manufacturing a solar cell according to an embodiment of the present invention.
  • the coupling does not only mean the case where the physical contact is directly between the components in the contact relationship between the components, other components are interposed between the components, the components in the other components Use it as a comprehensive concept until each contact.
  • the perovskite compound according to the embodiment of the present invention follows the formula below.
  • X FA (CH (NH 2 ) 2 ), MA (CH 3 NH 2 ), Cs, Rb, Na, K, Li
  • the first perovskite compound follows the formula:
  • X FA (CH (NH 2 ) 2 ), MA (CH 3 NH 2 ), Cs, Rb, Na, K, Li
  • Such a first perovskite compound may be referred to as 3-2-9 perovskite compound for convenience.
  • Perovskite compound (X 3 Bi 2 Z 9 ) according to an embodiment of the present invention can improve the problem that the structure of the perovskite compound of the prior art vulnerable to moisture, low durability at high temperatures.
  • the perovskite compound according to the embodiment of the present invention may form a perovskite crystal structure using Bi, and thus may replace a highly toxic substance such as lead (Pb).
  • the perovskite compound according to the embodiment of the present invention is excellent in terms of stability.
  • Method for producing a perovskite compound according to an embodiment of the present invention is characterized by being formed by mixing the precursor powder of the compound and then heat treatment.
  • the method for producing a perovskite compound according to an embodiment of the present invention comprises the steps of preparing an XZ compound powder, BiZ 3
  • the method may include preparing a compound powder, mixing the XZ compound powder and the BiZ 3 compound powder to form a mixed powder, and heat treating the mixed powder to prepare a compound represented by the following formula. .
  • X FA (CH (NH 2 ) 2 ), MA (CH 3 NH 2 ), Cs, Rb, Na, K, Li
  • the compound represented by the formula in the heat treatment of the mixed powder may be X 3 Bi 2 Z 9 .
  • the heat treatment may include heating the mixed powder in a heating furnace.
  • the temperature in the heating furnace may be carried out in the range of 140 or more and 200 or less.
  • the concentration of the XZ compound may be 1.5 mmol, and the concentration of the BiZ 3 compound may be 1 mmol.
  • the heat treatment may be performed in 50 minutes or more and 70 minutes or less.
  • FIG. 2 is a photograph of the coating of the perovskite compound formed by the method for producing a perovskite compound according to an embodiment of the present invention.
  • FIG 3 is a bandgap graph of the perovskite compound according to an embodiment of the present invention
  • Figure 4 is an XRD graph of the perovskite compound according to an embodiment of the present invention
  • Figure 5 is an embodiment of the present invention TGA analysis graph of the perovskite compound according.
  • the perovskite compound produced according to the perovskite compound manufacturing method according to an embodiment of the present invention can be seen that the bandgap energy is represented as 2.2eV high, X 3 Bi 2 It can be seen that the Y 9 crystal structure was formed.
  • FIG. 6 is a view schematically showing a solar cell 1000 according to an embodiment of the present invention.
  • 7 is a photograph showing a cross section of the solar cell 1000 according to an embodiment of the present invention.
  • a solar cell may include a first electrode 100, a light absorbing layer 200 formed on the first electrode, and a light absorbing layer 200 formed on the first electrode 100.
  • Including a second electrode 300, the first electrode 100, the second electrode 300 may be formed by being bonded to the light absorbing layer by the adhesive force of the light absorbing layer 200.
  • the light absorbing layer 200 includes a perovskite compound
  • the perovskite compound may be represented by the following formula.
  • X FA (CH (NH 2 ) 2 ), MA (CH 3 NH 2 ), Cs, Rb, Na, K, Li
  • the perovskite compound represented by the formula may be X 3 Bi 2 Z 9 .
  • the first electrode 100 may include a TiO 2 layer 120 selected from an indium tin oxide (ITO) substrate, a fluorine doped tin oxide (FTO) substrate, or a flexible transparent electrode substrate, and is formed on the selected substrate. Can be.
  • ITO indium tin oxide
  • FTO fluorine doped tin oxide
  • the flexible transparent electrode substrate includes a polymer substrate on which a metal wiring layer is formed, and the polymer substrate includes polyethylene terephthalate (PET), polyethylene sulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), and polymethylmethacrylate ( PMMA), polyimide (PI), ethylene vinyl acetate (EVA), amorphous polyethylene terephthalate (APET), polypropylene terephthalate (PPT), polyethylene terephthalate glycerol (PETG), polycyclohexylenedimethylene terephthalate ( PCTG), modified triacetylcellulose (TAC), cycloolefin polymer (COP), cycloolefin copolymer (COC), dicyclopentadiene polymer (DCPD), cyclopentadiene polymer (CPD), polyarylate (PAR), It may be a substrate selected from the group consisting of polyetherimide (PEI), polydimethylsilonce
  • the substrate included in the first electrode of the present invention is not limited to the examples presented above.
  • the TiO 2 layer 120 may include a blocking TiO 2 layer 122 and a mesoporous TiO 2 layer 124 formed on the blocking TiO 2 layer 122.
  • the TiO 2 layer 120 may function as an electron transport layer.
  • the first electrode 100 may further include a ZrO 2 layer 130, as with the TiO 2 layer 120, and performs a ZrO 2 layer 130 functioning as an electron transport layer.
  • the second electrode 300 may be a carbon electrode.
  • Carbon electrode can maintain a high efficiency of the solar cell over time because a reaction such as oxidation does not occur by the perovskite compound.
  • a carbon electrode may be bonded by an adhesive force of a perovskite compound without using a vacuum deposition method, and thus may be easily combined with the perovskite compound.
  • FIG. 8 is a flowchart schematically showing a method of manufacturing a solar cell according to an embodiment of the present invention.
  • the first electrode 100 and the second electrode 300 is characterized in that the adhesive is formed by the light absorbing layer 200.
  • forming the light absorbing layer 200 (S200) includes the step of forming a perovskite compound represented by the following formula.
  • X FA (CH (NH 2 ) 2 ), MA (CH 3 NH 2 ), Cs, Rb, Na, K, Li
  • the perovskite compound represented by the chemical formula in the step (S200) of forming the light absorbing layer 200 may be X 3 Bi 2 Z 9 .
  • a first electrode preparing a substrate of any one of a flexible transparent electrode substrate, an indium tin oxide (ITO) substrate or a Fluorine Doped Tin Oxide (FTO) substrate (S110) and a flexible transparent electrode substrate, ITO
  • the method may include forming a TiO 2 layer on any one of a substrate and a Fluorine Doped Tin Oxide (FTO) substrate (S120).
  • Preparing the FTO substrate (S110) may include processing a Fluorine Doped Tin Oxide (FTO) substrate to improve adhesion between the FTO substrate and the TiO 2 layer.
  • FTO Fluorine Doped Tin Oxide
  • the etched Fluorine Doped Tin Oxide (FTO) substrate may be cleaned using an ultrasonic cleaner in the order of acetone, IPA, and DI.
  • the cleaned Fluorine Doped Tin Oxide (FTO) substrate can be dried at 100 and treated for 600 seconds in a UV Ozone cleaner.
  • Forming the TiO 2 layer (S120) may include forming a blocking TiO 2 layer and forming a Mesoporous TiO 2 layer on the blocking TiO 2 layer.
  • Blocking forming a TiO 2 layer may include the step, step, drying the coated film to form the TiO 2 TiO 2 coating on the FTO substrate using a TiO 2 solution for preparing a TiO 2 solution.
  • Titanium diisopropoxide bis (acetylacetonate) 75 wt The% in isopropanol solution may be prepared in a concentration of 0.15 M by diluting in 1-butanol solution.
  • TiO 2 coating film can be formed by spin coating at 2000rpm for 20s seconds.
  • TiO 2 TiO 2 coating film may be dried by heat treatment at 125 or more for 5 minutes.
  • the forming of the Mesoporous TiO 2 layer on the Blocking TiO 2 layer may include preparing a mesoporous TiO 2 solution, forming a TiO 2 coating layer, and then drying the TiO 2 coating layer.
  • Mesoporous TiO 2 solution can be prepared by dissolving mesoporous TiO 2 in anhydrous ethanol (hydrous ethanol), it can be used by adjusting the concentration as needed.
  • the TiO 2 coating film may be dried by heat treatment at 450 or more for 30 minutes.
  • the forming of the first electrode (S100) may further include forming roughness on the mesoporous TiO 2 layer (S140).
  • TiCl 4 solution may be used to form roughness in the mesoporous TiO 2 layer.
  • the first heat treatment step may be performed at a temperature range of 70 to 100, and the second heat treatment step may be performed at 450 or more 30 minutes.
  • the adhesion between the light absorbing layer and the TiO 2 layer may be further improved.
  • Forming the light absorbing layer (S200) may include forming an X 3 Bi 2 Z 9 solution.
  • X FA (CH (NH 2 ) 2 ), MA (CH 3 NH 2 ), Cs, Rb, Na, K, Li
  • the compound represented by the formula may be X 3 Bi 2 Z 9 .
  • an X 3 Bi 2 Z 9 solution may be disposed between the first electrode 100 and the second electrode 300.
  • Dropping (S260) or by spin coating the X 3 Bi 2 Z 9 solution on the first electrode or the second electrode may be formed by selectively performing.
  • forming the light absorbing layer (S200) may include drying the X 3 Bi 2 Z 9 solution (S270).
  • the drying of the X 3 Bi 2 Y 9 solution may be performed at a temperature range of 0 to 200.
  • the forming of the second electrode (S300) may include preparing a substrate of any one of a glass substrate, a glass substrate on which Fluorine Doped Tin Oxide (FTO) or an Indium Tin Oxide (ITO) is deposited, and a flexible transparent electrode substrate ( S310), preparing a carbon powder (S320), by using the carbon powder, any one of the glass substrate, FTO (Fluorine Doped Tin Oxide) or ITO (Indium Tin Oxide) is deposited and a flexible transparent electrode substrate It may include the step of coating the carbon powder on one substrate (S330) and the step of heat-treating the carbon powder-coated substrate (S340).
  • FTO Fluorine Doped Tin Oxide
  • ITO Indium Tin Oxide
  • the heat treatment of the substrate coated with carbon powder (S340) may be performed at a temperature range of 300 or more.
  • Heat treatment of the substrate coated with carbon powder (S340) may be performed for 25 to 35 minutes.
  • the method may further include forming an adhesive layer on side surfaces of the light absorbing layer, the first electrode layer, the light absorbing layer, and the second electrode layer (S400).
  • the adhesive layer may be formed of an epoxy resin.
  • the light absorbance of the perovskite compound increased as the heat treatment temperature was increased in the range of 200 at room temperature, but it was confirmed that it rapidly decreased in 300 (Experimental Example 6).
  • the experimental results show that the perovskite compound has a different light absorbency according to the heat treatment temperature, and it can be confirmed that there is an appropriate heat treatment temperature.
  • the light absorbance of the perovskite compound increased with increasing concentration in the range of 0.1M (Experimental Example 7) to 1.0M (Experimental Example 11), but 0.5 at 2.0M (Experimental Example 12). It can be seen that it was lower than M (Experimental Example 9) and decreased.
  • the perovskite compound shows a result of different light absorbance according to the concentration, it can be confirmed that there is a proper concentration.
  • the heat treatment temperature and concentration of the perovskite compound act as a factor influencing the light absorption. Specifically, the light absorption was the highest when the heat treatment temperature is 200 and the concentration is 1.0M.
  • 11 is a graph comparing the efficiency of the solar cell according to the embodiment of the present invention and the solar cell of the prior art.
  • 12 is a graph comparing the efficiency change of the solar cell according to the prior art (comparative example) and the solar cell according to the embodiment of the present invention over time.
  • a solar cell comprising a first electrode, a light absorbing layer formed on the first electrode, and a second electrode formed on the light absorbing layer.
  • Each component is deposited in a vacuum over 10 -5 torr using spin coating, vacuum evaporator
  • FA 3 bi 2 I 9 powder was formed by heat treatment using the synthesized FAI powder and biI3 powder.
  • It is formed by bonding the light absorbing layer and the first electrode, the light absorbing layer and the second electrode by using the adhesive force of the light absorbing layer.
  • a junction solar cell according to an exemplary embodiment of the present invention is manufactured in that a process of Ag and Au in a vacuum state of 10 ⁇ 5 torr or more is performed to form a second electrode on a light absorbing layer. There is a difference in process.
  • the solar cell (experimental example) according to the embodiment of the present invention is different in terms of structure from the laminated solar cell (comparative example) in that carbon material is used instead of metal.
  • the junction type solar cell according to an exemplary embodiment of the present invention has been shown to have excellent durability in terms of its initial efficiency even after elapse of time.
  • the carbon electrode is stable to the perovskite crystal structure and can maintain the light absorption of the perovskite compound even by mutual bonding.
  • junction solar cell according to the embodiment of the present invention is implemented by performing a heat treatment process in a relatively low temperature range, not a deposition such as vacuum deposition process, it is easier than the stacked solar cell in terms of manufacturing process.
  • the bonded solar cell according to the embodiment of the present invention is economical in terms of cost by using a carbon material other than a metal such as Ag and Au.
  • FIG. 13 is a view showing a crystal structure of a perovskite compound according to an embodiment of the present invention.
  • Perovskite compound (X 3 Sb 2 Y 9 ) according to an embodiment of the present invention can improve the problem that the perovskite compound structure of the prior art is vulnerable to moisture, low durability at high temperatures.
  • the perovskite compound according to the embodiment of the present invention may form a perovskite crystal structure using Sb, and thus may replace a highly toxic substance such as lead (Pb).
  • the perovskite compound according to the embodiment of the present invention is excellent in terms of stability.
  • FIG. 14 is a photograph of a perovskite compound formed by the method for producing a perovskite compound according to an embodiment of the present invention.
  • Method for producing a perovskite compound according to an embodiment of the present invention is characterized by being formed by mixing the precursor powder of the compound and then heat treatment.
  • the method for producing a perovskite compound according to an embodiment of the present invention comprises the steps of preparing a XZ compound powder, SbZ 3
  • the method may include preparing a compound powder, mixing the XZ compound powder and the SbZ 3 compound powder to form a mixed powder, and heat treating the mixed powder to prepare a compound represented by the following formula. .
  • X FA (CH (NH 2 ) 2 ), MA (CH 3 NH 2 ), Cs, Rb, Na, K, Li
  • the perovskite compound represented by the formula may be X 3 Sb 2 Z 9 .
  • the heat treatment may include heating the mixed powder in a heating furnace.
  • the temperature in the heating furnace may be carried out in the range of 140 °C 200 °C.
  • the concentration of the XZ compound may be 1.5 mmol, and the concentration of the SbZ 3 compound may be 1 mmol.
  • the heat treatment may be performed in 50 minutes or more and 70 minutes or less.
  • 15 is a view schematically showing a solar cell 1000 according to an embodiment of the present invention.
  • 16 is a photograph showing a cross section of a solar cell 1000 according to an embodiment of the present invention.
  • a solar cell 1000 according to an embodiment of the present invention is disposed on a first electrode 100, a light absorbing layer 200, and a light absorbing layer 200 formed on the first electrode.
  • a second electrode 300 is formed, the first electrode 100, the second electrode 300 may be formed by being bonded to the light absorbing layer by the adhesive force of the light absorbing layer 200.
  • the light absorbing layer 200 may include a perovskite compound, and the perovskite compound may be represented by a chemical formula.
  • X FA (CH (NH 2 ) 2 ), MA (CH 3 NH 2 ), Cs, Rb, Na, K, Li
  • the perovskite compound represented by the formula may be X 3 Sb 2 Z 9 .
  • the first electrode 100 may include a TiO 2 layer 120 selected from an indium tin oxide (ITO) substrate, a fluorine doped tin oxide (FTO) substrate, or a flexible transparent electrode substrate, and is formed on the selected substrate. Can be.
  • ITO indium tin oxide
  • FTO fluorine doped tin oxide
  • the flexible transparent electrode substrate includes a polymer substrate on which a metal wiring layer is formed, and the polymer substrate includes polyethylene terephthalate (PET), polyethylene sulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), and polymethylmethacrylate ( PMMA), polyimide (PI), ethylene vinyl acetate (EVA), amorphous polyethylene terephthalate (APET), polypropylene terephthalate (PPT), polyethylene terephthalate glycerol (PETG), polycyclohexylenedimethylene terephthalate ( PCTG), modified triacetylcellulose (TAC), cycloolefin polymer (COP), cycloolefin copolymer (COC), dicyclopentadiene polymer (DCPD), cyclopentadiene polymer (CPD), polyarylate (PAR), It may be a substrate selected from the group consisting of polyetherimide (PEI), polydimethylsilonce
  • the substrate included in the first electrode of the present invention is not limited to the examples presented above.
  • the TiO 2 layer 120 may include a blocking TiO 2 layer 122 and a mesoporous TiO 2 layer 124 formed on the blocking TiO 2 layer 122.
  • the TiO 2 layer 120 may function as an electron transport layer.
  • the first electrode 100 may further include a ZrO 2 layer 130, as with the TiO 2 layer 120, and performs a ZrO 2 layer 130 functioning as an electron transport layer.
  • the thickness of the TiO 2 layer may be formed in the range of 300 nm or more and 6 ⁇ m or less, and the thickness of the ZrO 2 layer may be formed in the range of 300 nm or more and 2 ⁇ m or less.
  • the second electrode 300 may be a carbon electrode.
  • Carbon electrode can maintain a high efficiency of the solar cell over time because a reaction such as oxidation does not occur by the perovskite compound.
  • a carbon electrode may be bonded by an adhesive force of a perovskite compound without using a vacuum deposition method, and thus may be easily combined with the perovskite compound.
  • FIG. 17 is a flowchart schematically showing a method of manufacturing a solar cell according to an embodiment of the present invention.
  • forming the light absorbing layer 200 (S200) includes the step of forming a perovskite compound represented by the following formula.
  • X FA (CH (NH 2 ) 2 ), MA (CH 3 NH 2 ), Cs, Rb, Na, K, Li
  • the step of forming the light absorbing layer 200 (S200) the perovskite compound represented by the formula may be X 3 Sb 2 Z 9 .
  • Forming the first electrode (S100) comprises preparing a substrate of any one of a flexible transparent electrode substrate, an indium tin oxide (ITO) substrate or a Fluorine Doped Tin Oxide (FTO) substrate (S110) and a flexible transparent electrode substrate,
  • the method may include forming a TiO 2 layer on one of an ITO substrate and a Fluorine Doped Tin Oxide (FTO) substrate (S120).
  • Preparing the FTO substrate (S110) may include processing a Fluorine Doped Tin Oxide (FTO) substrate to improve adhesion between the FTO substrate and the TiO 2 layer.
  • FTO Fluorine Doped Tin Oxide
  • the etched Fluorine Doped Tin Oxide (FTO) substrate may be cleaned using an ultrasonic cleaner in the order of acetone, IPA, and DI.
  • the cleaned Fluorine Doped Tin Oxide (FTO) substrate may be dried at 100 ° C. and treated for 600 seconds in a UV Ozone cleaner.
  • Forming the TiO 2 layer (S120) may include forming a blocking TiO 2 layer and forming a Mesoporous TiO 2 layer on the blocking TiO 2 layer.
  • Blocking forming a TiO 2 layer may include the step, step, drying the coated film to form the TiO 2 TiO 2 coating on the FTO substrate using a TiO 2 solution for preparing a TiO 2 solution.
  • Titanium diisopropoxide Sbs acetylacetonate 75 wt .
  • The% in isopropanol solution may be prepared in a concentration of 0.15 M by diluting in 1-butanol solution.
  • TiO 2 coating film can be formed by spin coating at 2000rpm for 20s seconds.
  • TiO 2 TiO 2 coating film may be dried by heat treatment at more than 125 °C 5 minutes.
  • the forming of the Mesoporous TiO 2 layer on the Blocking TiO 2 layer may include preparing a mesoporous TiO 2 solution, forming a TiO 2 coating layer, and then drying the TiO 2 coating layer.
  • Mesoporous TiO 2 solution can be prepared by dissolving mesoporous TiO 2 in anhydrous ethanol (hydrous ethanol), it can be used by adjusting the concentration as needed.
  • the TiO 2 coating film may be dried by heat treatment at 450 ° C. or higher for 30 minutes.
  • the forming of the first electrode (S100) may further include forming roughness on the mesoporous TiO 2 layer (S140).
  • TiCl 4 solution may be used to form roughness in the mesoporous TiO 2 layer.
  • the first heat treatment step may be performed at a temperature range of 70 ° C. to 100 ° C.
  • the second heat treatment step may be performed at 450 ° C. or more for 30 minutes.
  • the adhesion between the light absorbing layer and the TiO 2 layer may be further improved.
  • Forming the light absorbing layer (S200) may include forming a X 3 Sb 2 Y 9 solution.
  • Forming the X 3 Sb 2 Y 9 solution preparing a XZ compound powder (S210), preparing a SbZ 3 compound powder (S220), the XZ compound powder and the SbZ 3 compound powder mixed and mixed Forming a powder (S230), by heat-treating the mixed powder, to produce a compound represented by the following formula (S240) and the step of dissolving the heat-treated mixed powder in a DMF solvent (S250) may be included. .
  • X FA (CH (NH 2 ) 2 ), MA (CH 3 NH 2 ), Cs, Rb, Na, K, Li
  • the compound represented by the formula in the step of heat-treating the mixed powder may be X 3 Sb 2 Z 9 .
  • forming the light absorbing layer (S200) may include drying the X 3 Sb 2 Z 9 solution (S270).
  • Drying the X 3 Sb 2 Z 9 solution may be carried out at a temperature range of 0 °C to 200 °C.
  • the forming of the second electrode (S300) may include preparing a substrate of any one of a glass substrate, a glass substrate on which Fluorine Doped Tin Oxide (FTO) or an Indium Tin Oxide (ITO) is deposited, and a flexible transparent electrode substrate ( S310), preparing a carbon powder (S320), by using the carbon powder, any one of the glass substrate, FTO (Fluorine Doped Tin Oxide) or ITO (Indium Tin Oxide) is deposited and a flexible transparent electrode substrate It may include the step of coating the carbon powder on one substrate (S330) and the step of heat-treating the carbon powder coated substrate (S340).
  • FTO Fluorine Doped Tin Oxide
  • ITO Indium Tin Oxide
  • the heat treatment of the substrate coated with carbon powder (S340) may be performed at a temperature range of 300 ° C. or higher.
  • Heat treatment of the substrate coated with carbon powder (S340) may be performed for 25 to 35 minutes.
  • the method may further include forming an adhesive layer on side surfaces of the light absorbing layer, the first electrode layer, the light absorbing layer, and the second electrode layer (S400).
  • the adhesive layer may be formed of an epoxy resin.
  • a solar cell comprising a first electrode, a light absorbing layer formed on the first electrode, and a second electrode formed on the light absorbing layer.
  • Each component is deposited in a vacuum over 10 -5 torr using spin coating, vacuum evaporator
  • a junction solar cell according to an exemplary embodiment of the present invention is manufactured in that a process of Ag and Au in a vacuum state of 10 ⁇ 5 torr or more is performed to form a second electrode on a light absorbing layer. There is a difference in process.
  • the solar cell (experimental example) according to the embodiment of the present invention is different in terms of structure from the laminated solar cell (comparative example) in that carbon material is used instead of metal.
  • the junction type solar cell according to the embodiment of the present invention has been shown to be excellent in terms of durability since the initial efficiency is maintained over time.
  • the carbon electrode is stable to the perovskite crystal structure and can maintain the light absorption of the perovskite compound even by mutual bonding.
  • TiO 2 according to the experimental example of the present invention
  • the thickness change of each concentration is compared, and the efficiency of the solar cell at each thickness will be compared.
  • TiO 2 concentration 500mg / ml
  • TiO 2 thickness 1.5 ⁇ m
  • TiO 2 thickness 500 nm
  • 19 to 21 are TiO 2 according to the experimental example of the present invention. This is a graph comparing the efficiency according to the change in thickness.
  • the efficiency of the solar cell according to the concentration of ZrO 2 formed on the TiO 2 is compared.
  • the concentration of TiO 2 in Experimental Examples 4 and 5 was the same at 2 g / ml.
  • the solar cell efficiency is 0.0002%.
  • the efficiency of the solar cell is 4.57%, which is 500mg / ml. In, high efficiency was shown.
  • the efficiency of the solar cell increased from 2.9% when ZrO 2 was not used to 4.57% when used.
  • the bonded solar cell according to the exemplary embodiment of the present invention is implemented by performing a heat treatment process in a relatively low temperature range rather than a deposition process such as vacuum deposition, thereby making it easier than a stacked solar cell in terms of a manufacturing process.
  • the bonded solar cell according to the embodiment of the present invention is economical in terms of cost by using a carbon material other than a metal such as Ag and Au.
  • Perovskite compound according to an embodiment of the present invention may be represented by the following formula.
  • X FA (CH (NH 2 ) 2 ), MA (CH 3 NH 2 ), Cs, Rb, Na, K, Li
  • Such a second perovskite compound may be referred to as a perovskite compound having a 1-2-7 structure for convenience.
  • the X 1 Y 2 Z 7 perovskite compound will be mainly described, but the description is 1.6 ⁇ b ⁇ 2.4, 5.6 ⁇ The same applies to all X a Y b Z c perovskite compounds that satisfy c ⁇ 8.4.
  • the perovskite compound according to the embodiment of the present invention may form a perovskite crystal structure using Bi and Sb, and thus may replace a highly toxic substance such as lead (Pb).
  • the perovskite compound according to an embodiment of the present invention is not easily oxidized in the air is excellent in terms of stability.
  • Figure 22 is an AFM picture of the perovskite compound according to an embodiment of the present invention.
  • (A) is a partially enlarged view of FIG. 22 (b). 22 shows the flatness of RbBi 2 I 7 .
  • Specific roughness of RbBi 2 I 7 of FIG. 22 is the same as that in Table 5 below.
  • Method for producing a perovskite compound according to an embodiment of the present invention is characterized by being formed by mixing the precursor powder of the compound and then heat treatment.
  • the method for producing a perovskite compound includes the steps of preparing an XZ compound powder and YZ 3 compound powder; Mixing the XZ compound powder and the YZ 3 compound powder to form a mixed powder; And heat treating the mixed powder to prepare a compound represented by the following formula.
  • X FA (CH (NH 2 ) 2 ), MA (CH 3 NH 2 ), Cs, Rb, Na, K, Li
  • the compound represented by the formula in the heat treatment of the mixed powder may be X 1 Y 2 Z 7 .
  • the heat treatment may include heating the mixed powder in a heating furnace.
  • the temperature in the heating furnace may be carried out in the range of 100 °C to 200 °C.
  • the X 1 Y 2 Z 7 material may be finally formed. That is, the concentration of the XZ compound may be 1 mmol, and the concentration of the YZ 3 compound may be 2 mmol.
  • the heat treatment may be performed for 5 minutes or more and 20 minutes or less.
  • Figure 23 and 24 are views showing the effect of the heat treatment step.
  • Figure 23 is a XRD measurement results showing the structural change before and after the heat treatment in the perovskite compound manufacturing method according to an embodiment of the present invention
  • Figure 24 is a perovskite compound preparation according to an embodiment of the present invention
  • RbBi 2 I 7 was used, (a) before the heat treatment, and (b) after the heat treatment.
  • Figure 24 shows the absorbance of the material when using UV-visible spectroscopy. Before the heat treatment, the absorption region was extended to approximately 600 nm, but after the heat treatment, the absorption region was expanded to 7000 nm (see shading).
  • the absorption region of the material is enlarged by the heat treatment, and when such a material is used in the solar cell, the solar cell efficiency may increase.
  • FIG 25 is a view schematically showing a solar cell according to an embodiment of the present invention
  • Figure 26 is a view showing the efficiency of the solar cell according to an embodiment of the present invention.
  • the solar cell according to the exemplary embodiment of the present invention is formed on the first electrode 100, the light absorbing layer 200 formed on the first electrode 100, and the light absorbing layer 200. It includes a second electrode 300, the light absorbing layer 200 includes a perovskite compound represented by the following formula.
  • X FA (CH (NH 2 ) 2 ), MA (CH 3 NH 2 ), Cs, Rb, Na, K, Li
  • the perovskite compound represented by the above formula may be X 1 Y 2 Z 7 .
  • the first electrode 100 and the second electrode 300 may be attached to the light absorbing layer 200 by the adhesive force of the perovskite compound of the light absorbing layer 200.
  • the first electrode 100 may include a first substrate selected from a glass substrate, an indium tin oxide (ITO) substrate, a fluorine doped tin oxide (FTO) substrate, and a flexible transparent electrode substrate, and a TiO 2 formed on the first substrate. It may include layer 120.
  • ITO indium tin oxide
  • FTO fluorine doped tin oxide
  • TiO 2 formed on the first substrate. It may include layer 120.
  • An ITO substrate is a glass substrate on which ITO is deposited
  • an FTO substrate is a glass substrate on which FTO is deposited.
  • the flexible transparent electrode substrate polyethylene terephthalate (PET), polyethylene sulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), polymethyl methacrylate (PMMA), polyimide (PI), Ethylene Vinyl Acetate (EVA), Amorphous Polyethylene Terephthalate (APET), Polypropylene Terephthalate (PPT), Polyethylene Terephthalate Glycerol (PETG), Polycyclohexylenedimethylene Terephthalate (PCTG), Modified Triacetyl Cellulose (TAC) ), Cycloolefin polymer (COP), cycloolefin copolymer (COC), dicyclopentadiene polymer (DCPD), cyclopentadiene polymer (CPD), polyarylate (PAR), polyetherimide (PEI), polydie It may be formed of a polymer substrate selected from the group consisting of methylsilone silane (PDMS), silicone resin, fluorine resin and modified epoxy resin
  • the flexible transparent electrode substrate is not limited to the examples presented above.
  • the TiO 2 layer 120 may function as an electron transport layer.
  • the TiO 2 layer 120 may include a blocking TiO 2 122 layer and a mesoporous TiO 2 layer 124 formed on the blocking TiO 2 122 layer.
  • the first electrode 100 may further include a ZrO 2 layer 130.
  • ZrO 2 layer 130 is formed on the TiO 2 layer 120, and performs a function as an electron transport layer, like TiO 2 layer 120.
  • the first electrode 100 is formed by stacking the first substrate, the blocking TiO 2 122, the mesoporous TiO 2 layer 124, and the ZrO 2 layer 130.
  • the second electrode 300 may include carbon. That is, the second electrode 300 may be a layer formed of carbon. In addition, the second electrode 300 may be coated with carbon powder on the second substrate.
  • the second substrate may be a substrate selected from any one of a glass substrate, an indium tin oxide (ITO) substrate, a fluorine doped tin oxide (FTO) substrate, and a flexible transparent electrode substrate.
  • ITO indium tin oxide
  • FTO fluorine doped tin oxide
  • the second electrode 300 may be formed on the light absorbing layer 200 in the air, and thus the second electrode 300 may be removed in a vacuum state. There is no need to form.
  • the carbon electrode may be bonded by the adhesive force of the perovskite compound without using a vacuum deposition method, and thus may be easily combined with the perovskite compound.
  • FIG. 26 illustrates that the first electrode 100 includes FTO, blocking TiO 2 122, a mesoporous TiO 2 layer 124, and a ZrO 2 layer 130, and the light absorbing layer 200 includes RbBi 2 I 7 .
  • the second electrode 300 represents the efficiency of the solar cell using carbon formed in the FTO. Specific efficiency of the solar cell is shown in the following [Table 6].
  • FF fill factor
  • PCE power conversion efficiency
  • FIG. 27 is a flowchart schematically illustrating a method of manufacturing a solar cell according to an embodiment of the present invention.
  • the light absorbing layer 200 includes a perovskite compound represented by the following formula.
  • X FA (CH (NH 2 ) 2 ), MA (CH 3 NH 2 ), Cs, Rb, Na, K, Li
  • the perovskite compound represented by the above formula in the step of forming the light absorbing layer 200 may be X 1 Y 2 Z 7 .
  • Forming the first electrode 100 may include preparing a first substrate selected from a glass substrate, an indium tin oxide (ITO) substrate, a fluorine doped tin oxide (FTO) substrate, and a flexible transparent electrode substrate.
  • the method may include forming a TiO 2 layer 120 on the S110 and the first substrate (S120).
  • first substrate is implemented using the FTO substrate.
  • FTO substrate the type of first substrate is not limited.
  • Preparing the FTO substrate (S110) may include processing a Fluorine Doped Tin Oxide (FTO) substrate to improve adhesion between the FTO substrate and the TiO 2 layer 120.
  • FTO Fluorine Doped Tin Oxide
  • the etched Fluorine Doped Tin Oxide (FTO) substrate may be cleaned using an ultrasonic cleaner in the order of acetone, IPA, and DI. Next, the cleaned Fluorine Doped Tin Oxide (FTO) substrate may be dried at 100 ° C. and treated for 600 seconds in a UV Ozone cleaner.
  • Forming the TiO 2 layer 120 may include forming a blocking TiO 2 layer 122 and forming a mesoporous TiO 2 layer 124 on the blocking TiO 2 122 layer. have.
  • forming a blocking TiO 2 layer 122 may include the step, step, drying the TiO 2 coating to form the TiO 2 coating layer on the FTO substrate using a TiO 2 solution for preparing a TiO 2 solution.
  • Titanium diisopropoxide bis (acetylacetonate) 75 wt The% in isopropanol solution may be prepared in a concentration of 0.15 M by diluting in 1-butanol solution.
  • TiO 2 coating film can be formed by spin-coating (spin coating) at 2000rpm for 20 seconds.
  • TiO 2 TiO 2 coating film may be dried by heat treatment at more than 125 °C 5 minutes.
  • Forming the mesoporous TiO 2 layer 124 on the blocking TiO 2 layer 122 may include preparing a mesoporous TiO 2 solution, forming a TiO 2 coating layer, and then drying the TiO 2 coating layer.
  • Mesoporous TiO 2 solution can be prepared by dissolving mesoporous TiO 2 in anhydrous ethanol (hydrous ethanol), it can be used by adjusting the concentration as needed.
  • the TiO 2 coating layer may be dried by heat treatment at 450 ° C. or higher for 30 minutes.
  • forming the first electrode 100 may further include forming roughness on the mesoporous TiO 2 layer 124.
  • TiCl 4 solution may be used to form roughness in the mesoporous TiO 2 layer 124.
  • Forming the roughness may include preparing a mixed solution of 1 ml of 20 mM TiCl 4 solution and 99 ml of distilled water, impregnating the substrate on which the mesoporous TiO 2 layer 124 is formed, the first heat treatment step, A washing step, a drying step and a second heat treatment step may be performed.
  • the first heat treatment step may be performed at a temperature range of 70 ° C. to 100 ° C.
  • the second heat treatment step may be performed at 450 ° C. or more for 30 minutes.
  • the adhesion between the light absorbing layer 200 and the TiO 2 layer 120 to be formed on the first electrode 100 is further improved. Can be.
  • the forming of the first electrode 100 may further include forming a ZrO 2 layer 130 on the TiO 2 layer 120 (S130).
  • the first electrode 100 is formed by stacking the first substrate, the blocking TiO 2 layer 122, the mesoporous TiO 2 layer 124, and the ZrO 2 layer 130.
  • Forming a light absorbing layer (200) (S200) is A 1 B 2 C 7 to form a solution, and A 1 B 2 C 7 solution the second dropping (dropping) on the first electrode 100, spin coating It may include a step (S250) for (spin coating) or screen printing (screen printing).
  • Forming the X 1 Y 2 Z 7 solution preparing a XZ compound powder and YZ 3 compound powder (S210), mixing the XZ compound powder and the YZ 3 compound powder to form a mixed powder (S220) ), Heat-treating the mixed powder to prepare a compound represented by the following formula (S230) and dissolving the heat-treated mixed powder in DMF (dimethyl formamide) or DMSO (dimethyl sulfoxide) solvent (S240) It may include.
  • X FA (CH (NH 2 ) 2 ), MA (CH 3 NH 2 ), Cs, Rb, Na, K, Li
  • the compound represented by the above formula in the heat treatment of the mixed powder may be X 1 Y 2 Z 7 .
  • Heat-treating the mixed powder to prepare a compound represented by the following formula (S230) may include the step of heating the mixed powder in a heating furnace.
  • the temperature in the heating furnace may be carried out in the range of 100 °C to 200 °C.
  • the concentration of the XZ compound may be 1 mmol
  • the concentration of the YZ 3 compound may be 2 mmol
  • the heat treatment may be performed for 5 minutes or more and 20 minutes or less.
  • the X 1 Y 2 Z 7 solution is formed and then applied on the first electrode 100, wherein the X 1 Y 2 Z 7 solution application may be selectively performed during dropping, spin coating or screen printing.
  • Forming the light absorbing layer 200 (S200) may further include the step (S250) of drying the X 1 Y 2 Z 7 solution. That is, a step of drying the X 1 Y 2 Z 7 solution applied on the first electrode 100 may be added. Drying the X 1 Y 2 Z 7 solution (S250) may be carried out at a temperature range of 0 °C to 200 °C.
  • the forming of the second electrode 300 includes preparing a second substrate selected from a glass substrate, an indium tin oxide (ITO) substrate, a fluorine doped tin oxide (FTO) substrate, and a flexible transparent electrode substrate. (S310), preparing a carbon powder (S320), coating the carbon powder on the second substrate (S330), and heat treating the carbon substrate coated with the second substrate (S340). can do.
  • the step (S340) of heat treating the second substrate coated with the carbon powder may be performed for 25 minutes to 35 minutes at a temperature of 300 ° C. or higher and 600 ° C. or lower.
  • the forming of the second electrode 300 may include applying a paste including carbon powder on the light absorbing layer 200 and drying the paste.
  • the third Perovskite Compound (1-3-10 Perovskite compound)
  • the perovskite compound according to an embodiment of the present invention may be represented by the following formula.
  • the largest atomic model is X
  • the hidden atomic model is Y
  • the small atomic model is Z.
  • X FA (CH (NH 2 ) 2 ), MA (CH 3 NH 2 ), Cs, Rb, Na, K, Li
  • a: b: c 1: 3: 10.
  • such a third perovskite compound may be referred to as a perovskite compound having a 1-3-10 structure for convenience.
  • the X 1 Y 2 Z 7 perovskite compound will be mainly described, but the description is about 2.4 ⁇ b ⁇ 3.6, 8 ⁇ The same applies to all X a Y b Z c perovskite compounds that satisfy c ⁇ 12.
  • the third perovskite compound may form a triclinic crystal structure.
  • Solid materials may be classified into crystalline structures and non-crystalline or amorphous structures according to the order of atomic arrangements.
  • the perovskite compound has a triclinic crystal structure in the crystalline structure.
  • Figure 29 shows the theoretical bandgap of the perovskite compound, in particular CsBi 3 I 10 according to an embodiment of the present invention.
  • the theoretical bandgap of the perovskite compound according to an embodiment of the present invention is 1.25 eV.
  • the perovskite compound according to the embodiment of the present invention may form a perovskite crystal structure using Bi and Sb, and thus may replace a highly toxic substance such as lead (Pb).
  • the perovskite compound according to an embodiment of the present invention is not easily oxidized in the air is excellent in terms of stability.
  • the theoretical band gap of the perovskite compound according to the embodiment of the present invention is 1.25 eV.
  • the ideal bandgap of the light absorbing layer for the high efficiency solar cell is 1.4 eV and is similar to the band gap of the perovskite compound according to the embodiment of the present invention.
  • the perovskite compound according to the embodiment of the present invention may contribute to the improvement of solar cell efficiency when used in a solar cell.
  • Method for producing a perovskite compound according to an embodiment of the present invention is characterized by being formed by mixing the precursor powder of the compound and then heat treatment.
  • the method for producing a perovskite compound includes the steps of preparing an XZ compound powder and YZ 3 compound powder; Mixing the XZ compound powder and the YZ 3 compound powder to form a mixed powder; And heat treating the mixed powder to prepare a compound represented by the following formula.
  • X FA (CH (NH 2 ) 2 ), MA (CH 3 NH 2 ), Cs, Rb, Na, K, Li
  • the compound represented by the formula in the heat treatment of the mixed powder may be X 1 Y 3 Z 10 .
  • the compound in the heat treatment step, may have a triclinic crystal structure.
  • the perovskite compound When A is substituted and bonded to the empty space of XZ 3 of trigonal or rhombohedral crystal structure through heat treatment, when the chemical formula of X 1 Y 3 Z 10 is satisfied, the perovskite compound has a tetragonal crystal structure. Can be.
  • Cs is substituted into the empty space of BiI 3 having a trigonal (rhombohedral) crystal structure through heat treatment. The structure is broken and finally CsBi 3 I 10 of the triclinic crystal structure is formed.
  • the heat treatment may include heating the mixed powder in a heating furnace.
  • the temperature in the heating furnace may be 100 ° C or more and 200 ° C or less.
  • the concentration of the XZ compound may be 1 mol
  • the concentration of the YZ 3 compound may be 3 mol.
  • the heat treatment may be performed for 5 minutes or more and 20 minutes or less.
  • Figure 30 to 33 are views showing the effect of the heat treatment step.
  • Figure 30 is a XRD measurement results showing the structural change before and after the heat treatment in the perovskite compound manufacturing method according to an embodiment of the present invention
  • Figure 31 is a perovskite compound preparation according to an embodiment of the present invention SEM picture showing the structural change before and after the heat treatment in the method
  • Figure 32 is a view showing the change in light absorbance before and after heat treatment in the perovskite compound manufacturing method according to an embodiment of the present invention
  • Figure 33 is an embodiment of the present invention Figure showing the bandgap change before and after heat treatment in the perovskite compound manufacturing method according to the example.
  • the material has a more dense structure after the heat treatment.
  • the grain size of the thin film is increased, and as the grain size increases, solar cell efficiency may increase.
  • Figure 32 shows the absorbance of the material when using UV-visible spectroscopy. Before the heat treatment, the absorption region was expanded to approximately 570 nm, but after the heat treatment, the absorption region was enlarged to 730 nm (see shading). In the actual picture, the orange film was changed to black, which is easy to absorb light.
  • bandgap values obtained through the results of FIG. 32 The bandgap value was 2.3 eV before the heat treatment, but dropped to 1.8 eV after the heat treatment. 32 and 33, it can be interpreted that the band gap is lowered due to the heat treatment to increase the wavelength for absorbing light. As a result, the band gap of the perovskite compound is lowered to 1.25 to 1.8 eV due to the heat treatment, thereby approaching 1.4 eV. Thus, when the perovskite compound is used in a solar cell, the solar cell efficiency may increase.
  • FIG. 34 is a view schematically showing a solar cell according to an embodiment of the present invention.
  • the solar cell according to the embodiment of the present invention is formed on the first electrode 100, the light absorbing layer 200 formed on the first electrode 100, and the light absorbing layer 200. It includes a second electrode 300, the light absorbing layer 200 includes a perovskite compound represented by the following formula.
  • X FA (CH (NH 2 ) 2 ), MA (CH 3 NH 2 ), Cs, Rb, Na, K, Li
  • the perovskite compound represented by the above formula may be X 1 Y 3 Z 10 .
  • the compound may have a triclinic crystal structure.
  • the first electrode 100 and the second electrode 300 may be attached to the light absorbing layer 200 by the adhesive force of the perovskite compound of the light absorbing layer 200.
  • the first electrode 100 may include a first substrate selected from a glass substrate, an indium tin oxide (ITO) substrate, a fluorine doped tin oxide (FTO) substrate, and a flexible transparent electrode substrate, and a TiO 2 formed on the first substrate. It may include layer 120.
  • ITO indium tin oxide
  • FTO fluorine doped tin oxide
  • TiO 2 formed on the first substrate. It may include layer 120.
  • An ITO substrate is a glass substrate on which ITO is deposited
  • an FTO substrate is a glass substrate on which FTO is deposited.
  • the flexible transparent electrode substrate polyethylene terephthalate (PET), polyethylene sulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), polymethyl methacrylate (PMMA), polyimide (PI), Ethylene Vinyl Acetate (EVA), Amorphous Polyethylene Terephthalate (APET), Polypropylene Terephthalate (PPT), Polyethylene Terephthalate Glycerol (PETG), Polycyclohexylenedimethylene Terephthalate (PCTG), Modified Triacetyl Cellulose (TAC) ), Cycloolefin polymer (COP), cycloolefin copolymer (COC), dicyclopentadiene polymer (DCPD), cyclopentadiene polymer (CPD), polyarylate (PAR), polyetherimide (PEI), polydie It may be formed of a polymer substrate selected from the group consisting of methylsilone silane (PDMS), silicone resin, fluorine resin and modified epoxy resin
  • the flexible transparent electrode substrate is not limited to the examples presented above.
  • the TiO 2 layer 120 may function as an electron transport layer.
  • the TiO 2 layer 120 may include a blocking TiO 2 122 layer and a mesoporous TiO 2 layer 124 formed on the blocking TiO 2 122 layer.
  • the first electrode 100 may further include a ZrO 2 layer 130.
  • ZrO 2 layer 130 is formed on the TiO 2 layer 120, and performs a function as an electron transport layer, like TiO 2 layer 120.
  • the first electrode 100 is formed by stacking the first substrate, the blocking TiO 2 122, the mesoporous TiO 2 layer 124, and the ZrO 2 layer 130.
  • the second electrode 300 may include carbon. That is, the second electrode 300 may be a layer formed of carbon. In addition, the second electrode 300 may be coated with carbon powder on the second substrate.
  • the second substrate may be a substrate selected from any one of a glass substrate, an indium tin oxide (ITO) substrate, a fluorine doped tin oxide (FTO) substrate, and a flexible transparent electrode substrate.
  • ITO indium tin oxide
  • FTO fluorine doped tin oxide
  • the second electrode 300 may be formed on the light absorbing layer 200 in the air, and thus the second electrode 300 may be removed in a vacuum state. There is no need to form.
  • the carbon electrode may be bonded by the adhesive force of the perovskite compound without using a vacuum deposition method, and thus may be easily combined with the perovskite compound.
  • 35 is a flowchart schematically illustrating a method of manufacturing a solar cell according to an embodiment of the present invention.
  • the light absorbing layer 200 includes a perovskite compound represented by the following formula.
  • X FA (CH (NH 2 ) 2 ), MA (CH 3 NH 2 ), Cs, Rb, Na, K, Li
  • the perovskite compound represented by the above formula may be X 1 Y 3 Z 10 .
  • the perovskite compound may form a triclinic crystal structure.
  • Forming the first electrode 100 may include preparing a first substrate selected from a glass substrate, an indium tin oxide (ITO) substrate, a fluorine doped tin oxide (FTO) substrate, and a flexible transparent electrode substrate.
  • the method may include forming a TiO 2 layer 120 on the S110 and the first substrate (S120).
  • first substrate is implemented using the FTO substrate.
  • FTO substrate the type of first substrate is not limited.
  • Preparing the FTO substrate (S110) may include processing a Fluorine Doped Tin Oxide (FTO) substrate to improve adhesion between the FTO substrate and the TiO 2 layer 120.
  • FTO Fluorine Doped Tin Oxide
  • the etched Fluorine Doped Tin Oxide (FTO) substrate may be cleaned using an ultrasonic cleaner in the order of acetone, IPA, and DI. Next, the cleaned Fluorine Doped Tin Oxide (FTO) substrate may be dried at 100 ° C. and treated for 600 seconds in a UV Ozone cleaner.
  • Forming the TiO 2 layer 120 may include forming a blocking TiO 2 layer 122 and forming a mesoporous TiO 2 layer 124 on the blocking TiO 2 122 layer. have.
  • forming a blocking TiO 2 layer 122 may include the step, step, drying the TiO 2 coating to form the TiO 2 coating layer on the FTO substrate using a TiO 2 solution for preparing a TiO 2 solution.
  • Titanium diisopropoxide bis (acetylacetonate) 75 wt The% in isopropanol solution may be prepared in a concentration of 0.15 M by diluting in 1-butanol solution.
  • TiO 2 coating film can be formed by spin-coating (spin coating) at 2000rpm for 20 seconds.
  • TiO 2 TiO 2 coating film may be dried by heat treatment at more than 125 °C 5 minutes.
  • Forming the mesoporous TiO 2 layer 124 on the blocking TiO 2 layer 122 may include preparing a mesoporous TiO 2 solution, forming a TiO 2 coating layer, and then drying the TiO 2 coating layer.
  • Mesoporous TiO 2 solution can be prepared by dissolving mesoporous TiO 2 in anhydrous ethanol (hydrous ethanol), it can be used by adjusting the concentration as needed.
  • the TiO 2 coating layer may be dried by heat treatment at 450 ° C. or higher for 30 minutes.
  • forming the first electrode 100 may further include forming roughness on the mesoporous TiO 2 layer 124.
  • TiCl 4 solution may be used to form roughness in the mesoporous TiO 2 layer 124.
  • Forming the roughness may include preparing a mixed solution of 1 ml of 20 mM TiCl 4 solution and 99 ml of distilled water, impregnating the substrate on which the mesoporous TiO 2 layer 124 is formed, the first heat treatment step, A washing step, a drying step and a second heat treatment step may be performed.
  • the first heat treatment step may be performed at a temperature range of 70 ° C. to 100 ° C.
  • the second heat treatment step may be performed at 450 ° C. or more for 30 minutes.
  • the adhesion between the light absorbing layer 200 and the TiO 2 layer 120 to be formed on the first electrode 100 is further improved. Can be.
  • the forming of the first electrode 100 may further include forming a ZrO 2 layer 130 on the TiO 2 layer 120 (S130).
  • the first electrode 100 is formed by stacking the first substrate, the blocking TiO 2 layer 122, the mesoporous TiO 2 layer 124, and the ZrO 2 layer 130.
  • Forming a light absorbing layer (200) (S200) is A 1 B 3 C 10 to form a solution, and A 1 B 3 C 10 solution to the first electrode 100 is dropping (dropping), spin-coated on the (Spin coating) or screen printing (screen printing) may include the step (S250).
  • Forming the X 1 Y 3 Z 10 solution preparing a XZ compound powder and YZ 3 compound powder (S210), mixing the XZ compound powder and the YZ 3 compound powder to form a mixed powder (S220) ), Heat-treating the mixed powder to prepare a compound represented by the following formula (S230) and dissolving the heat-treated mixed powder in DMF (dimethyl formamide) or DMSO (dimethyl sulfoxide) solvent (S240) It may include.
  • X FA (CH (NH 2 ) 2 ), MA (CH 3 NH 2 ), Cs, Rb, Na, K, Li
  • the compound represented by the above formula may be X 1 Y 3 Z 10 .
  • the heat treatment of the mixed powder to prepare a compound represented by the chemical formula (S230) may include heating the mixed powder in a heating furnace.
  • the temperature in the heating furnace may range from 100 ° C. to 200 ° C.
  • the compound may have a triclinic crystal structure.
  • X is substituted and bonded to the empty space of XZ 3 of trigonal or rhombohedral crystal structure, and when the chemical formula of X 1 Y 3 Z 10 is satisfied, the perovskite compound has a tetragonal crystal structure. Can be.
  • Cs is substituted into the empty space of BiI 3 having a trigonal (rhombohedral) crystal structure through heat treatment. The structure is broken and finally CsBi 3 I 10 of the triclinic crystal structure is formed.
  • the concentration of the XZ compound may be 1 mol
  • the concentration of the YZ 3 compound may be 3 mol.
  • the step of the heat treatment may be performed for 5 minutes or more and 20 minutes or less.
  • the application of the X 1 Y 3 Z 10 solution may be selectively performed during dropping, spin coating, screen printing.
  • Forming the light absorbing layer 200 (S200) may further include the step (S250) of drying the X 1 Y 3 Z 10 solution. That is, a step of drying the X 1 Y 3 Z 10 solution applied on the first electrode 100 may be added. Drying the X 1 Y 3 Z 10 solution (S250) may be carried out at a temperature range of 0 °C to 200 °C.
  • the forming of the second electrode 300 includes preparing a second substrate selected from a glass substrate, an indium tin oxide (ITO) substrate, a fluorine doped tin oxide (FTO) substrate, and a flexible transparent electrode substrate. (S310), preparing a carbon powder (S320), coating the carbon powder on the second substrate (S330), and heat treating the carbon substrate coated with the second substrate (S340). can do.
  • the step (S340) of heat treating the second substrate coated with the carbon powder may be performed for 20 minutes to 40 minutes at a temperature of 300 ° C. or higher and 600 ° C. or lower.
  • the forming of the second electrode 300 may include applying a carbon-containing paste on the light absorbing layer 200, and may further include drying the paste.

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Abstract

La présente invention concerne un composé pérovskite représenté par la formule chimique suivante. [Formule chimique] XaYbZc, X = un de FA(CH(NH2)2), MA(CH3NH2), Cs, Rb, Na, K, et Li ; Y = un de Bi et Sb ; Z = un de F, I, Br et C1 ; 0,5<b<0,7 et 2,5<c<3,5, 1,6<b<2,4 et 5,6<c<8,4, ou 2,4<b<3,6 et 8<c<12 est satisfaite lorsque a = 1 ; le composé de pérovskite selon l'invention a une structure cristalline triclinique lorsque 2,4<b<3,6 et 8<c<12.
PCT/KR2017/012676 2016-12-28 2017-11-09 Composé pérovskite et son procédé de préparation, cellule solaire comprenant un composé pérovskite et son procédé de fabrication WO2018124459A1 (fr)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
KR10-2016-0181477 2016-12-28
KR1020160181477A KR20180077402A (ko) 2016-12-28 2016-12-28 페로브스카이트 화합물 및 그 제조방법, 페로브스카이트 화합물을 포함하는 태양전지 및 그 제조방법
KR10-2016-0181514 2016-12-28
KR1020160181514A KR102197547B1 (ko) 2016-12-28 2016-12-28 페로브스카이트 화합물 및 그 제조방법, 페로브스카이트 화합물을 포함하는 태양전지 및 그 제조방법
KR1020170085520A KR101963252B1 (ko) 2017-07-05 2017-07-05 1-3-10 구조의 페로브스카이트 화합물 및 그 제조방법, 1-3-10 구조의 페로브스카이트 화합물을 포함하는 태양전지 및 그 제조방법
KR10-2017-0085536 2017-07-05
KR1020170085536A KR102223890B1 (ko) 2017-07-05 2017-07-05 1-2-7 구조의 페로브스카이트 화합물 및 그 제조방법, 1-2-7 구조의 페로브스카이트 화합물을 포함하는 태양전지 및 그 제조방법
KR10-2017-0085520 2017-07-05

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CN109411554A (zh) * 2018-09-10 2019-03-01 暨南大学 一种阴阳离子共掺杂无机钙钛矿薄膜及其制备方法与应用
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CN114050189A (zh) * 2021-11-10 2022-02-15 苏州腾晖光伏技术有限公司 一种具有3d结构的硒硫化锑薄膜太阳电池及其制备方法
CN115157735A (zh) * 2022-08-12 2022-10-11 华中科技大学鄂州工业技术研究院 一种复合厚膜的制备方法

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