WO2018119932A1 - 一种显示面板及其阵列基板 - Google Patents

一种显示面板及其阵列基板 Download PDF

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Publication number
WO2018119932A1
WO2018119932A1 PCT/CN2016/113180 CN2016113180W WO2018119932A1 WO 2018119932 A1 WO2018119932 A1 WO 2018119932A1 CN 2016113180 W CN2016113180 W CN 2016113180W WO 2018119932 A1 WO2018119932 A1 WO 2018119932A1
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Prior art keywords
array substrate
line
touch
electrode
self
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Ceased
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PCT/CN2016/113180
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English (en)
French (fr)
Inventor
蔡育徵
马长文
张洲
徐盼
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US15/328,433 priority Critical patent/US20180292693A1/en
Publication of WO2018119932A1 publication Critical patent/WO2018119932A1/zh
Anticipated expiration legal-status Critical
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    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
    • G—PHYSICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G—PHYSICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/13338—Input devices, e.g. touch panels
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
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    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

Definitions

  • the invention belongs to the technical field of liquid crystal display, and in particular to an array substrate.
  • touch display panels have been widely accepted and used by people, such as smart phones, tablets, etc., which use touch display panels.
  • the touch display panel integrates the touch panel and the liquid crystal display panel by using the embedded touch technology, so that the liquid crystal display panel has the functions of displaying and sensing the touch input at the same time, and is widely used in mobile phones, televisions, personal digital assistants,
  • Various consumer electronic products such as digital cameras, notebook computers, and desktop computers have become mainstream in display devices.
  • the liquid crystal display panel is composed of a color filter (CF) substrate, an array (TFT, a T array substrate in Film Transistor) substrate, a liquid crystal (LC) sandwiched between the color filter substrate and the array substrate, and a sealing film.
  • the composition of the plastic frame (Sealant) generally includes: an Array process (film, yellow light, etching and stripping), a middle cell process (a TFT substrate and a CF substrate), and a rear stage. Module assembly process (drive IC and printed circuit board is pressed).
  • the front Array process mainly forms a TFT substrate to control the movement of liquid crystal molecules; the middle Cell process mainly adds liquid crystal between the TFT substrate and the CF substrate; the rear module assembly process is mainly to drive the IC to press and print the circuit.
  • the integration of the plates drives the liquid crystal molecules to rotate and display images.
  • the touch display panel can be divided into a touch cell covering the on cell (On Cell), a touch electrode embedded in the cell (In Cell), and an external type according to different structures.
  • the In Cell type has the advantages of low cost, ultra-thin, and narrow bezel. It is mainly used in high-end touch products and has evolved into the main development direction of touch technology.
  • a conventional TFT substrate used in an in-cell touch display panel includes: a substrate 100, a light shielding layer 200, a buffer layer 300, a polysilicon layer 400, a gate insulating layer 500, and a gate electrode.
  • the touch electrode is located in the same layer as the first transparent conductive layer 810, and a second interlayer insulating layer 850 and a passivation layer are spaced apart from the first transparent conductive layer and the pixel electrode. Therefore, the TFT is caused by the TFT.
  • the substrate has a longer processing time, an increased thickness, and a higher production cost.
  • the present invention provides an array substrate, which can further simplify the structure.
  • the array substrate includes: a substrate, a plurality of data lines and gate lines disposed on the substrate, and a plurality of sub-pixel units surrounded by the data lines and the gate lines; the sub-pixel units include:
  • a thin film transistor including a gate and a source/drain, the gate is electrically connected to the gate line, and the source/drain are electrically connected to the data line and the pixel electrode, respectively;
  • a transparent electrode layer disposed between the thin film transistor and the pixel electrode
  • a touch line disposed on the same layer of the source/drain, wherein the touch line is electrically connected to the transparent electrode layer through a first via.
  • the touch line and the source/drain are insulated from each other.
  • the transparent electrode layer is divided into a plurality of self-capacitance electrodes that are insulated from each other, and the self-capacitance electrodes are electrically connected to the driving circuit of the array substrate through the touch line;
  • the driving circuit is configured to provide a touch signal to the self-capacitance electrode, so that the self-capacitance electrode is used as a touch electrode;
  • the driving circuit is configured to provide a common voltage for the self-capacitance electrode to make the self-capacitance electrode as a common electrode.
  • the driving circuit is further electrically connected to the data line and the gate line for providing a scan signal for the gate line and a data signal for the data line.
  • the touch line is disposed corresponding to the photoresist blank area in the sub-pixel unit.
  • the touch line is disposed corresponding to the photoresist blank area in the blue sub-pixel unit.
  • the touch line is disposed corresponding to the photoresist blank area in the white sub-pixel unit.
  • a display panel comprising: a color filter substrate disposed opposite to each other, an array substrate, and a liquid crystal layer disposed between the color filter substrate and the array substrate;
  • the array substrate includes: a substrate, a plurality of data lines and gate lines disposed on the substrate, and a plurality of sub-pixel units surrounded by the data lines and the gate lines; the sub-pixel units include:
  • a thin film transistor including a gate and a source/drain, the gate is electrically connected to the gate line, and the source/drain are electrically connected to the data line and the pixel electrode, respectively;
  • a transparent electrode layer disposed between the thin film transistor and the pixel electrode
  • a touch line disposed on the same layer of the source/drain, wherein the touch line is electrically connected to the transparent electrode layer through a first via.
  • the touch line and the source/drain are insulated from each other.
  • the transparent electrode layer is divided into a plurality of self-capacitance electrodes that are insulated from each other, and the self-capacitance electrodes are electrically connected to the driving circuit of the array substrate through the touch line;
  • the driving circuit is configured to provide a touch signal to the self-capacitance electrode, so that the self-capacitance electrode is used as a touch electrode;
  • the driving circuit is configured to provide a common voltage for the self-capacitance electrode to make the self-capacitance electrode as a common electrode.
  • the driving circuit is further electrically connected to the data line and the gate line for providing a scan signal for the gate line and a data signal for the data line.
  • the touch line is disposed corresponding to the photoresist blank area in the sub-pixel unit.
  • the invention provides a structural design of the array substrate, which eliminates the structure of the M3 layer and the IL layer, and the M3 layer function is further simplified by the replacement of the source/drain electrodes of the same layer. Due to the simplification of the structure, the production of the M3 layer and the IL layer in the array substrate preparation process is reduced, the process process is reduced, the raw materials are saved, and the production cost is reduced; while improving the yield of the product, the economic benefit is improved.
  • FIG. 1 is a schematic structural view of a prior art array substrate
  • FIG. 2 is a schematic structural view of a cut surface of a display panel according to Embodiment 1 of the present invention.
  • FIG. 3 is a schematic top plan view of an array substrate according to Embodiment 1 of the present invention.
  • FIG. 4 is a schematic view showing the layout of a transparent conductive layer of an array substrate according to Embodiment 1 of the present invention.
  • FIG. 5 is a schematic diagram of a touch line layout in an array substrate according to Embodiment 1 of the present invention.
  • FIG. 6 is a touch circuit diagram of an array substrate according to Embodiment 1 of the present invention.
  • FIG. 7 is a schematic diagram of a touch line layout in an array substrate according to Embodiment 2 of the present invention.
  • FIG. 8 is a circuit diagram of a touch circuit in an array substrate according to Embodiment 2 of the present invention.
  • FIG. 9 is a schematic diagram of a touch line layout in an array substrate according to Embodiment 3 of the present invention.
  • FIG. 10 is a circuit diagram of a touch circuit in an array substrate according to Embodiment 3 of the present invention.
  • the present embodiment provides a display panel including a color filter substrate 20 , an array substrate 10 , and an array of the color filter substrate 20 and the array substrate 10 .
  • Liquid crystal layer 30 As shown in FIG. 2 and FIG. 3 , the present embodiment provides a display panel including a color filter substrate 20 , an array substrate 10 , and an array of the color filter substrate 20 and the array substrate 10 .
  • Liquid crystal layer 30 As shown in FIG. 2 and FIG. 3 , the present embodiment provides a display panel including a color filter substrate 20 , an array substrate 10 , and an array of the color filter substrate 20 and the array substrate 10 .
  • the color filter substrate 20 includes a support member 21, a color filter 22, and a glass substrate 23 which are disposed away from the liquid crystal molecules 30 in sequence.
  • the color filter has at least red (R) photoresist, green (G) photoresist and blue (B) photoresist, and some of the displays using RGBW technology also include white (W) photoresist.
  • the array substrate 10 includes: a substrate 11; a plurality of data lines (Data) and gate lines (Gate) 16 disposed on the substrate 11 and surrounded by the data lines and gate lines A plurality of sub-pixel units 10a.
  • each of the sub-pixel units 10a includes a pixel electrode 43, a thin film transistor 10b, and a transparent electrode layer 41 disposed between the thin film transistor 11b and the pixel electrode 43.
  • a touch line (TP) 40 is further included.
  • the thin film transistor 10b includes a gate 16 and a source/drain 18, the gate 16 being electrically connected to the gate line (Gate), the source/drain 18 being respectively associated with the data line (Data),
  • the pixel electrode 10a is electrically connected;
  • the touch line 40 is disposed on the same layer of the source/drain 18, and the touch line 40 is electrically connected to the transparent electrode layer 41 through the first via 41a.
  • the array substrate 10 of the present embodiment includes: a substrate 11 , a plurality of light shielding metal layers 12 disposed on the substrate 11 , a buffer layer disposed on the light shielding metal layer 12 and the substrate 11 a polysilicon layer 14 disposed on the buffer layer 13; a gate insulating layer 15 disposed on the polysilicon layer 14 and the buffer layer 13; a gate line 16 disposed on the gate insulating layer 15 and An interlayer insulating layer 17 is disposed on the gate electrode 16 and the gate insulating layer 15.
  • the interlayer insulating layer 17 is provided with a source/drain 18 and a touch line 40.
  • the source/drain 18 extends through the entire interlayer insulating layer 17 and is disposed on the polysilicon layer through the gate insulating layer 15. 14 on.
  • the middle interlayer insulating layer 17 is further provided with a touch line 40 insulated from the source/drain electrodes 18.
  • the source/drain 18 and the touch line 40 are made of the same material, and the applied materials are, for example, metal molybdenum, aluminum or copper, but the functions and functions are different.
  • a flat layer 19 is disposed on the source/drain 18, the touch line 40, and the interlayer insulating layer 17, and a transparent electrode layer 41 is disposed on the flat layer 19.
  • the transparent electrode layer 41 is connected to the touch line 40 through the flat layer 19 through the first via 41a.
  • the transparent electrode layer 41 is divided into a plurality of self-capacitance electrodes 41 b that are insulated from each other, and the self-capacitance electrode 41 b is electrically connected to the driving circuit 50 of the array substrate 10 through the touch line 40 . .
  • the driving circuit is configured to provide a touch signal to the self-capacitance electrode, so that the self-capacitance electrode is used as a touch electrode; and the driving circuit is configured to provide a common voltage for the self-capacitance electrode to enable the self-capacitance
  • the capacitor electrode acts as a common electrode. Therefore, the transparent electrode layer 41 assumes the roles of the touch electrode and the common electrode in the touch phase and the display phase, respectively.
  • a pixel electrode 43 (which may also be a second transparent conductive layer) is disposed on the passivation layer 42. The pixel electrode 43 penetrates the passivation layer 42 and the planar layer 19 through the second via 43a. The drain of the source/drain 18 is connected. The pixel electrode 43 is in contact with the liquid crystal molecules 30.
  • the M3 layer and the IL layer are removed from the structure of the array substrate 10.
  • the function of the M3 layer is replaced by the touch line 40, and the structure of the array substrate is further simplified.
  • the touch line 40 has various wiring patterns.
  • the components or traces on the array substrate 10 are correspondingly disposed in the region between the adjacent two sub-pixel units without the photoresist, that is, the photoresist blank. Area. Therefore, the touch line 40 and the data lines (source/drain 18) of the embodiment are respectively disposed on the photoresist blank areas of the R, G, and B sub-pixel units.
  • the array substrate obtained in this embodiment belongs to a self-capacitive touch sensor, and its circuit diagram is as shown in FIG. 4 .
  • the difference between this embodiment and the first embodiment is that the layout positions of the touch line 40 and the source/drain electrodes 18 are adjusted. Since the touch line 40 and the source/drain 18 of the present invention are located on the same layer, the touch line cannot overlap with the data line Data, and the photoresist formed in the sub-pixels on both sides of the narrow photoresist blank area is easily formed. The area affects the photoresist performance or needs to reduce the aperture ratio of the array substrate. Therefore, under the premise of keeping the aperture ratio constant, the touch line 40 can be disposed only in the blue sub-pixel unit, as shown in FIG. 5, and disposed in the photoresist blank area of the blue sub-pixel unit as much as possible. The selection of the blue sub-pixel is due to the fact that the photoresist contributes the least in brightness. Therefore, if the area of the partial photoresist light-emitting area cannot be avoided, the display brightness of the entire display panel is not greatly affected.
  • the array substrate obtained in this embodiment belongs to a self-capacitive touch sensor, and its circuit diagram is as shown in FIG. 6.
  • This embodiment is directed to a display panel using RGBW technology (which also includes white photoresist in the color filter substrate). Compared with the second embodiment, the difference is that, as shown in FIG. 7 , the touch line 40 is only disposed in the photoresist blank area in the white sub-pixel, and similarly, even if it is unavoidable to easily cover part of the photoresist light-emitting area, It does not affect the overall quality of the display panel.
  • the array substrate obtained in this embodiment belongs to a self-capacitive touch sensor, and its circuit diagram is as shown in FIG. 8.
  • the invention saves the fabrication of a metal layer and an insulating layer, thereby achieving the purpose of reducing the process and saving raw materials, thereby achieving the effect of shortening the processing time of the TFT substrate and reducing the manufacturing cost of the TFT substrate.
  • the TFT substrate of the present invention has an in-cell touch function, and has a simple structure and low manufacturing cost.

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Abstract

一种阵列基板（10），通过将触控线路（40）与源/漏极（18）制作于同一层，由触控线路（40）接收驱动电路（50）发出的触控信号、并发送给第一透明导电层（41）。阵列基板（10）是自电容式触摸传感器，实现内嵌式触控功能。与现有技术相比，节省了一道金属层与一道绝缘层的制作，从而达到减少工艺制程、节约原料的目的，进而实现缩短TFT基板的制程时间以及降低TFT基板的制造成本的效果。其中，TFT基板具有内嵌式触控功能，且结构简单，制作成本低。

Description

一种显示面板及其阵列基板 技术领域
本发明属于液晶显示技术领域，具体地讲，涉及一种阵列基板。
背景技术
随着显示技术的发展，触控显示面板已经广泛地被人们所接受及使用，如智能手机、平板电脑等均使用了触控显示面板。触控显示面板采用嵌入式触控技术将触控面板和液晶显示面板结合为一体，使得液晶显示面板同时具备显示和感知触控输入的功能，被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
通常液晶显示面板由彩色滤光(CF，Color Filter)基板、阵列(TFT，T阵列基板in Film Transistor)基板、夹于彩色滤光基板与阵列基板之间的液晶(LC，Liquid Crystal)及密封胶框(Sealant)组成，其成型工艺一般包括：前段阵列(Array)制程(薄膜、黄光、蚀刻及剥膜)、中段成盒(Cell)制程(TFT基板与CF基板贴合)及后段模组组装制程(驱动IC与印刷电路板压合)。其中，前段Array制程主要是形成TFT基板，以便于控制液晶分子的运动；中段Cell制程主要是在TFT基板与CF基板之间添加液晶；后段模组组装制程主要是驱动IC压合与印刷电路板的整合，进而驱动液晶分子转动，显示图像。
触控显示面板根据结构不同可划分为触控电极覆盖于液晶盒上式(On Cell)、触控电极内嵌在液晶盒内式(In Cell)、以及外挂式。其中，In Cell式具有成本低、超薄、和窄边框的优点，主要应用在高端触控产品中，已演化为触控技术的主要发展方向。
如图1所示，现有的用于内嵌式触控显示面板中的TFT基板，其包括：衬底100、遮光层200、缓冲层300、多晶硅层400、栅极绝缘层500、栅极520、第一层间绝缘层600、源/漏极610、平坦层700、第一透明导电层810与触控 电极(M3层)820、第二层间绝缘层(IL)850和钝化层900、及像素电极950。其中，所述触控电极与第一透明导电层810位于同一层，且与第一透明导电层与像素电极之间间隔有第二层间绝缘层850以及钝化层，因此，这会造成TFT基板的制程时间较长，厚度增大，且生产本较高。
发明内容
为了解决上述现有技术存在的问题，本发明提供一种阵列基板，能够进一得到结构简化。
这种阵列基板包括：衬底、设置于所述衬底上的多条数据线和栅极线以及由所述数据线、栅极线围成的多个子像素单元；所述子像素单元包括：
像素电极，以及
薄膜晶体管，其包括栅极和源/漏极，所述栅极与所述栅极线电连接，所述源/漏极分别与所述数据线、所述像素电极电连接；
设置于所述薄膜晶体管和所述像素电极之间的透明电极层；
设置于所述源/漏极同一层上的触控线路，所述触控线路通过第一过孔与所述透明电极层电连接。
其中，所述触控线路与所述源/漏极之间相互绝缘。
其中，所述透明电极层被分割成若干个相互绝缘的自电容电极，所述自电容电极通过所述触控线路与所述阵列基板的驱动电路电连接；
所述驱动电路用于为所述自电容电极提供触控信号，以使所述自电容电极作为触控电极；
所述驱动电路用于为所述自电容电极提供公共电压，以使所述自电容电极作为公共电极。
其中，所述驱动电路还与所述数据线、所述栅极线电连接，用于为栅极线提供扫描信号、为数据线提供数据信号。
其中，所述触控线路对应于所述子像素单元内的光阻空白区布设。
其中，所述触控线路对应于蓝色子像素单元内的光阻空白区布设。
其中，所述触控线路对应于白色子像素单元内的光阻空白区布设。
还提供这种显示面板，包括相对设置的彩色滤光基板、阵列基板，以及设置于所述彩色滤光基板、阵列基板之间的液晶层；
所述阵列基板包括：衬底、设置于所述衬底上的多条数据线和栅极线以及由所述数据线、栅极线围成的多个子像素单元；所述子像素单元包括：
像素电极，以及
薄膜晶体管，其包括栅极和源/漏极，所述栅极与所述栅极线电连接，所述源/漏极分别与所述数据线、所述像素电极电连接；
设置于所述薄膜晶体管和所述像素电极之间的透明电极层；
设置于所述源/漏极同一层上的触控线路，所述触控线路通过第一过孔与所述透明电极层电连接。
其中，所述触控线路与所述源/漏极之间相互绝缘。
其中，所述透明电极层被分割成若干个相互绝缘的自电容电极，所述自电容电极通过所述触控线路与所述阵列基板的驱动电路电连接；
所述驱动电路用于为所述自电容电极提供触控信号，以使所述自电容电极作为触控电极；
所述驱动电路用于为所述自电容电极提供公共电压，以使所述自电容电极作为公共电极。
其中，所述驱动电路还与所述数据线、所述栅极线电连接，用于为栅极线提供扫描信号、为数据线提供数据信号。
其中，所述触控线路对应于所述子像素单元内的光阻空白区布设。
有益效果：
本发明提供一种阵列基板的结构设计，免去了M3层和IL层的结构，M3层功能由于源/漏极同层的触控电极所代替，结构得到进一步的精简。也正由于结构的精简，减少了阵列基板制备过程中M3层、IL层这2道光罩的制作，减少工艺制程、节约原料及降低生产成本；在提升产品良率的同时，提高经济效益。
附图说明
通过结合附图进行的以下描述，本发明的实施例的上述和其它方面、特点和优点将变得更加清楚，附图中：
图1是现有技术的阵列基板结构示意图；
图2是本发明实施例1的显示面板的切面结构示意图；
图3是本发明实施例1的阵列基板俯视结构示意图；
图4是本发明实施例1阵列基板的透明导电层布设示意图；
图5是本发明实施例1的阵列基板中触控线路布设示意图；
图6是本发明实施例1的阵列基板中触控电路图；
图7是本发明实施例2的阵列基板中触控线路布设示意图；
图8是本发明实施例2的阵列基板中触控电路图；
图9是本发明实施例3的阵列基板中触控线路布设示意图；
图10是本发明实施例3的阵列基板中触控电路图。
具体实施方式
以下，将参照附图来详细描述本发明的实施例。然而，可以以许多不同的形式来实施本发明，并且本发明不应该被解释为限制于这里阐述的具体实施例。相反，提供这些实施例是为了解释本发明的原理及其实际应用，从而使本 领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。
实施例1
结合图2和图3所示，本实施例提供一种显示面板，其包括相对设置的彩色滤光基板20、阵列基板10，以及夹设于所述彩色滤光基板20和阵列基板10中的液晶层30。
其中，彩色滤光基板20包括依次远离所述液晶分子30设置的支撑件21、彩色滤光片22和玻璃衬底23。彩色滤光片上至少设有红色(R)光阻、绿色(G)光阻和蓝色(B)光阻，有些应用RGBW技术的显示器中，还包括有白色(W)光阻。
其中，所述阵列基板10包括：衬底11；设置于所述衬底11上的多条数据线(Data)和栅极线(Gate)16以及由所述数据线、栅极线围成的多个子像素单元10a。
如图2所示，每个所述子像素单元10a中，包括像素电极43、薄膜晶体管10b和设置于所述薄膜晶体管11b和所述像素电极43之间的透明电极层41。对于本发明的触控显示面板，还包括触控线路(TP)40。
薄膜晶体管10b包括栅极16和源/漏极18，所述栅极16与所述栅极线(Gate)电连接，所述源/漏极18分别与所述数据线(Data)、所述像素电极10a电连接；
触控线路40设置于所述源/漏极18同一层上，所述触控线路40通过第一过孔41a与所述透明电极层41电连接。
具体地，本实施例的阵列基板10包括：衬底11，设置于所述衬底11上的若干个遮光金属层12、设置于所述遮光金属层12和所述衬底11上的缓冲层13；设置于所述缓冲层13上的多晶硅层14；设置于所述多晶硅层14和缓冲层13上的栅极绝缘层15；设置于所述栅极绝缘层15上的栅极线16以及设置于所述栅极16、所述栅极绝缘层15上的层间绝缘层17。
所述层间绝缘层17上设有源/漏极18和触控线路40，所述源/漏极18贯穿整个层间绝缘层17、经过所述栅极绝缘层15设置于所述多晶硅层14上。同时，中层间绝缘层17上还设置与所述源/漏极18相互绝缘的触控线路40。在实际制备过程中，源/漏极18和触控线路40的制备材质是相同的，应用的材料例如为金属钼、铝或铜，只是所承担的作用和功能不同。
在所述源/漏极18、所述触控线路40和所述层间绝缘层17设置平坦层19；在所述平坦层19上设置透明电极层41。所述透明电极层41通过第一过孔41a贯穿所述平坦层19与所述触控线路40连接。
参考图4所示，所述透明电极层41被分割成若干个相互绝缘的自电容电极41b，所述自电容电极41b通过所述触控线路40与所述阵列基板10的驱动电路50电连接。
所述驱动电路用于为所述自电容电极提供触控信号，以使所述自电容电极作为触控电极；所述驱动电路用于为所述自电容电极提供公共电压，以使所述自电容电极作为公共电极。因此，所述透明电极层41是在触控阶段、显示阶段分别承担触控电极、公共电极的角色。
在所述像素电极41、所述平坦层19上的钝化层42。在所述钝化层42上设置像素电极43(也可成为第二透明导电层)，所述像素电极43通过第二过孔43a贯穿所述钝化层42、所述平坦层19与所述源/漏极18的漏极连接。像素电极43与所述液晶分子30接触。
本实施例中，阵列基板10的结构中去掉了M3层和IL层，而M3层的功能由触控线路40代替，进一步精简了阵列基板的结构。
结合图3所示，所述触控线路40的布线方式有多种。一般地，为了使彩色滤光片的性能发挥最佳，阵列基板10上元器件或走线布设会对应设置在相邻两个子像素单元之间的、没有布设光阻的区域，即光阻空白区。因此，本实施例的触控线路40、数据线(源/漏极18)均对应布设在R、G、B子像素单元的光阻空白区上。本实施例所获得阵列基板是属于自电容式触摸传感器，其电路图如图4所示。
实施例2
本实施例与实施例1所不同的是，触控线路40和源/漏极18的布设位置有所调整。由于本发明的触控线路40和源/漏极18位于同一层上，触控线路无法与数据线Data重合，形成在狭窄的光阻空白区上容易占据到两侧的子像素内的光阻区域，影响光阻性能或需要降低阵列基板的开口率。因此，在保持开口率不变的前提下，可以将触控线路40只布设在蓝色子像素单元内，如图5所示，尽量布设在蓝色子像素单元的光阻空白区。选择蓝色子像素是由于该光阻在亮度上贡献最小，故此若无法避免被遮蔽局部光阻出光面积，对整个显示面板的显示亮度影响不大。
本实施例所获得阵列基板是属于自电容式触摸传感器，其电路图如图6所示。
实施例3
本实施例是针对使用RGBW技术(彩色滤光基板中还包括白色光阻)的显示面板而言的。与实施例2相比，所不同的是，如图7所示，触控线路40只布设在白色子像素内的光阻空白区内，同样地，即使无法避免容易遮盖部分光阻出光面积，也不会对显示面板的整体品质带来的影响。
本实施例所获得阵列基板是属于自电容式触摸传感器，其电路图如图8所示。
与现有技术相比，本发明节省了一道金属层与一道绝缘层的制作，从而达到减少工艺制程、节约原料的目的，进而实现缩短TFT基板的制程时间以及降低TFT基板的制造成本的效果。本发明的TFT基板，具有内嵌式触控功能，且结构简单，制作成本低。
虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。

Claims (12)

  1. 一种阵列基板，其中，包括：衬底、设置于所述衬底上的多条数据线和栅极线以及由所述数据线、栅极线围成的多个子像素单元；其中，所述子像素单元包括：
    像素电极，以及
    薄膜晶体管，其包括栅极和源/漏极，所述栅极与所述栅极线电连接，所述源/漏极分别与所述数据线、所述像素电极电连接；
    设置于所述薄膜晶体管和所述像素电极之间的透明电极层；
    设置于所述源/漏极同一层上的触控线路，所述触控线路通过第一过孔与所述透明电极层电连接。
  2. 根据权利要求1所述阵列基板，其中，所述触控线路与所述源/漏极之间相互绝缘。
  3. 根据权利要求1所述阵列基板，其中，所述透明电极层被分割成若干个相互绝缘的自电容电极，所述自电容电极通过所述触控线路与所述阵列基板的驱动电路电连接；
    所述驱动电路用于为所述自电容电极提供触控信号，以使所述自电容电极作为触控电极；
    所述驱动电路用于为所述自电容电极提供公共电压，以使所述自电容电极作为公共电极。
  4. 根据权利要求3所述阵列基板，其中，所述驱动电路还与所述数据线、所述栅极线电连接，用于为栅极线提供扫描信号、为数据线提供数据信号。
  5. 根据权利要求1所述阵列基板，其中，所述触控线路对应于所述子像素单元内的光阻空白区布设。
  6. 根据权利要求1所述阵列基板，其中，所述触控线路对应于蓝色子像素单元内的光阻空白区布设。
  7. 根据权利要求1所述阵列基板，其中，所述触控线路对应于白色子像素单元内的光阻空白区布设。
  8. 一种显示面板，包括相对设置的彩色滤光基板、阵列基板，以及设置于所述彩色滤光基板、阵列基板之间的液晶层；其中，
    所述阵列基板包括：衬底、设置于所述衬底上的多条数据线和栅极线以及由所述数据线、栅极线围成的多个子像素单元；所述子像素单元包括：
    像素电极，以及
    薄膜晶体管，其包括栅极和源/漏极，所述栅极与所述栅极线电连接，所述源/漏极分别与所述数据线、所述像素电极电连接；
    设置于所述薄膜晶体管和所述像素电极之间的透明电极层；
    设置于所述源/漏极同一层上的触控线路，所述触控线路通过第一过孔与所述透明电极层电连接。
  9. 根据权利要求8所述显示面板，其中，所述触控线路与所述源/漏极之间相互绝缘。
  10. 根据权利要求8所述显示面板，其中，所述透明电极层被分割成若干个相互绝缘的自电容电极，所述自电容电极通过所述触控线路与所述阵列基板的驱动电路电连接；
    所述驱动电路用于为所述自电容电极提供触控信号，以使所述自电容电极作为触控电极；
    所述驱动电路用于为所述自电容电极提供公共电压，以使所述自电容电极作为公共电极。
  11. 根据权利要求10所述显示面板，其中，所述驱动电路还与所述数据线、所述栅极线电连接，用于为栅极线提供扫描信号、为数据线提供数据信号。
  12. 根据权利要求8所述阵列基板，其中，所述触控线路对应于所述子像素单元内的光阻空白区布设。
PCT/CN2016/113180 2016-12-27 2016-12-29 一种显示面板及其阵列基板 Ceased WO2018119932A1 (zh)

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