WO2018116350A1 - Dispositif électroluminescent - Google Patents

Dispositif électroluminescent Download PDF

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Publication number
WO2018116350A1
WO2018116350A1 PCT/JP2016/087787 JP2016087787W WO2018116350A1 WO 2018116350 A1 WO2018116350 A1 WO 2018116350A1 JP 2016087787 W JP2016087787 W JP 2016087787W WO 2018116350 A1 WO2018116350 A1 WO 2018116350A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
electrode
metal film
light
emitting device
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PCT/JP2016/087787
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English (en)
Japanese (ja)
Inventor
哲二 松尾
Original Assignee
サンケン電気株式会社
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Application filed by サンケン電気株式会社 filed Critical サンケン電気株式会社
Priority to JP2017529104A priority Critical patent/JP6414334B1/ja
Priority to PCT/JP2016/087787 priority patent/WO2018116350A1/fr
Publication of WO2018116350A1 publication Critical patent/WO2018116350A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes

Definitions

  • the present invention relates to a light emitting device to which a chip size package technology is applied.
  • a chip size package is applied to a light emitting device in order to improve the light emission efficiency and miniaturization of the light emitting device using a light emitting element such as a light emitting diode (LED) as a light source (for example, Patent Document 1). reference.).
  • a light emitting element such as a light emitting diode (LED) as a light source
  • Patent Document 1 a light emitting diode
  • the development of a structure in which the semiconductor substrate used for forming the semiconductor layer constituting the light emitting element is separated from the semiconductor layer and the semiconductor layer is enclosed in a package such as a resin is proceeding. It has been. In this structure, not a semiconductor substrate but a resin substrate or the like can be used as a support substrate that supports the light emitting element, so that an inexpensive light emitting device can be provided.
  • CSP structure In a light emitting device having a structure to which CSP is applied (hereinafter referred to as “CSP structure”), an electrode connected to the light emitting element is disposed on a surface opposite to the light extraction surface. For this reason, there is no thing which shields the emitted light of a light emitting element in the direction of a light extraction surface, and the luminous efficiency of a light-emitting device improves.
  • the second metal film on the surface opposite to the light extraction surface, the light emitted from the light emitting element traveling in the direction opposite to the light extraction surface can be reflected toward the light extraction surface. For this reason, the brightness
  • the Ag film or Al film used for the second metal film is likely to cause migration. For this reason, there existed a problem that the reliability of a light-emitting device fell.
  • an object of the present invention is to provide an inexpensive light emitting device in which a decrease in reliability is suppressed.
  • the support substrate, the first metal film disposed on the support substrate, the first metal film is embedded in a part of the upper portion, and the side surface and the bottom surface are covered with the first metal film.
  • a light emitting element disposed on the first metal film so as to cover the upper surface of the second metal film, and the second metal film is emitted from the light emitting element more than the first metal film.
  • a light emitting device having a CSP structure in which the first metal film is less likely to cause migration than the second metal film is provided.
  • the light emitting device includes a support substrate 10, a first metal film 40 disposed on the support substrate 10, and a part of an upper portion of the first metal film 40.
  • the embedded second metal film 30 and the light emitting element 20 disposed on the first metal film 40 so as to cover the upper surface of the second metal film 30 are provided.
  • the side and bottom surfaces of the second metal film 30 are covered with the first metal film 40.
  • the first metal film 40 is less prone to migration than the second metal film 30.
  • a bonded metal film 50 is disposed between the support substrate 10 and the first metal film 40.
  • the laminated metal film 50 is used as a bonding material for integrating the light emitting element 20 and the support substrate 10 together.
  • the periphery of the light emitting element 20, the first metal film 40, and the bonded metal film 50 is covered with a light-transmissive insulating protective film 100.
  • the insulating protective film 100 contributes to suppression of moisture permeation into the light emitting element 20 from the outside and improvement in mechanical strength of the light emitting device.
  • a light transmissive film 110 is disposed so as to cover the periphery of the insulating protective film 100.
  • the light emitting element 20 has a laminated structure in which a second conductive type second semiconductor layer 23 is disposed above the first conductive type first semiconductor layer 21.
  • the first semiconductor layer 21 covers the upper surface of the second metal film 30, and the lower surface of the first semiconductor layer 21 is in contact with the second metal film 30.
  • the light emitting element 20 uses the upper surface of the second semiconductor layer 23 as a light extraction surface.
  • the first conductivity type and the second conductivity type are opposite to each other. That is, if the first conductivity type is P type, the second conductivity type is N type, and if the first conductivity type is N type, the second conductivity type is P type.
  • the first conductivity type is the P type and the second conductivity type is the N type will be described as an example.
  • the light emitting element 20 is an LED element in which the first semiconductor layer 21 is a P-type cladding layer and the second semiconductor layer 23 is an N-type cladding layer.
  • the light-emitting device shown in FIG. 1 a double hetero structure in which a first semiconductor layer 21, a light-emitting layer 22, and a second semiconductor layer 23 are stacked is employed for the light-emitting element 20.
  • the first semiconductor layer 21 is electrically connected to the first electrode 61
  • the second semiconductor layer 23 is electrically connected to the second electrode 62.
  • the first electrode 61 and the second electrode 62 are electrodes for supplying a driving current for the light emitting element 20.
  • the first electrode 61 and the second electrode 62 are collectively referred to as “power supply electrode”.
  • the power supply electrode is disposed on the side surface of the support substrate 10.
  • the first electrode wiring 71 disposed on the upper surface of the support substrate 10 is connected to the first semiconductor layer via the second metal film 30, the first metal film 40, and the bonded metal film 50. It is electrically connected to the lower surface of 21.
  • the first electrode wiring 71 is drawn to the outside of the support substrate 10 and connected to the first electrode 61.
  • the second semiconductor layer 23 and the second electrode 62 include a surface electrode 80 disposed on the upper surface of the second semiconductor layer 23 and a second electrode wiring 72 disposed on the side surface of the insulating protective film 100. Are electrically connected.
  • the surface electrode 80 is disposed at the outer edge portion of the light extraction surface, and the end portion of the second electrode wiring 72 penetrating the insulating protective film 100 is connected to the surface electrode 80.
  • the first electrode wiring 71 and the second electrode wiring 72 are insulated and separated.
  • the first electrode wiring 71 and the second electrode wiring 72 are collectively referred to as “electrode wiring”.
  • Holes are supplied from the first electrode 61 to the first semiconductor layer 21 through the first electrode wiring 71, the bonded metal film 50, the first metal film 40, and the second metal film 30.
  • electrons are supplied from the second electrode 62 to the second semiconductor layer 23 through the second electrode wiring 72 and the surface electrode 80. Then, holes are injected from the first semiconductor layer 21 and electrons are injected from the second semiconductor layer 23 into the light emitting layer 22. The injected holes and electrons recombine in the light emitting layer 22 to generate light in the light emitting layer 22.
  • Light emitted from the light emitting element 20 passes through the light transmissive film 110 and is output as output light L from the light emitting device.
  • the emitted light traveling in the direction from the light emitting element 20 to the first semiconductor layer 21 is reflected on the surface of the second metal film 30. That is, the second metal film 30 can reflect the emitted light of the light emitting element 20 traveling in the direction opposite to the light extraction surface toward the light extraction surface. For this reason, the brightness of the output light L can be improved.
  • the second metal film 30 is made of a conductive material having a higher reflectance with respect to the emitted light of the light emitting element 20 than the first metal film 40 and capable of making ohmic contact with the first semiconductor layer 21.
  • a white metal film such as a silver-based alloy such as a silver-palladium alloy, an aluminum (Al) film, a dielectric multilayer film (DBR), or the like is preferably used as the material of the second metal film 30.
  • the material used for the second metal film 30 is a metal that easily undergoes migration. When migration occurs in the second metal film 30, the reliability of the light emitting device is lowered.
  • the side surface of the second metal film 30 is below the outer edge portion of the light emitting element 20 so that the outer edge portion of the second metal film 30 is not exposed to the outside. 40. Furthermore, the bottom surface of the second metal film 30 is covered with the first metal film 40 so that the second metal film 30 does not come into contact with the bonded metal film 50.
  • the first metal film 40 is less likely to cause migration than the second metal film 30. As a result, a decrease in reliability of the light emitting device is suppressed.
  • a material that is unlikely to cause migration such as Au, titanium (Ti), and tungsten (W), is preferably used.
  • the power supply electrode that shields the light from the light emitting element 20 is not disposed in the direction of the light extraction surface, the light emission efficiency of the light emitting device is improved. Moreover, since wire bonding is not used for the connection between the light emitting element and the power supply electrode, it is possible to suppress problems such as disconnection of the wire and short circuit through the wire. Therefore, the reliability of the light emitting device is improved.
  • the light-emitting device having the CSP structure has a low mechanical strength when a transparent resin such as an epoxy resin or a silicone resin is used in a portion where light is extracted. For this reason, the mechanical strength of the whole package falls.
  • the stress applied to the light emitting element 20 greatly affects the characteristics of the light emitting device. Particularly, in the case of a light emitting device having a CSP structure, since the light emitting element 20 is bonded to the support substrate 10 of the package material, the light emitting element is caused by a difference in linear expansion coefficient between the support substrate 10 and the light emitting element 20 or deformation during processing. 20 is easily stressed. When stress is applied to the light emitting element 20, the reliability of the light emitting device is lowered and the light emission efficiency is lowered.
  • the light emitting element 20 is supported from below by the support substrate 10 and the power supply electrode. In this case, the light emitting element 20 is distorted due to a difference in coefficient of linear expansion between the support substrate 10 and the power supply electrode.
  • the entire lower surface of the light emitting element 20 is covered with the support substrate 10 in plan view, and the first electrode 61 and the second electrode 62 are disposed outside the light emitting element 20. ing. That is, the support substrate 10 is disposed below the light emitting element 20 between the first electrode 61 and the second electrode 62. For this reason, there is no boundary between the support substrate 10 and the power supply electrode below the light emitting element 20. Therefore, according to the light emitting device shown in FIG. 1, the occurrence of distortion in the light emitting element 20 due to the difference in linear expansion coefficient between the support substrate 10 and the power supply electrode is suppressed.
  • the support substrate 10 an epoxy resin or a silicone resin containing a filler can be used. Moreover, the white support substrate 10 is realizable by adding a white pigment to these resin. According to the white support substrate 10, the reflectance at the support substrate 10 can be improved. As a result, the luminance of the light emitting device is improved.
  • a material having higher mechanical strength than the resin may be used for the support substrate 10.
  • a ceramic substrate is used for the support substrate 10. By using a ceramic substrate having a high mechanical strength for the support substrate 10, the mechanical strength as a package of the light emitting device can be improved.
  • the first metal film 40 is disposed so as to cover the side surface and the bottom surface of the second metal film 30.
  • the occurrence of migration in the second metal film 30 is suppressed by the first metal film 40.
  • the fall of the reliability of a light-emitting device is suppressed.
  • an inexpensive resin substrate or ceramic substrate can be used as the support substrate 10, and the light emitting element 20 is supported from below by a uniform material. For this reason, breakage of the light emitting device is prevented, and a decrease in performance of the light emitting device and a decrease in product life are suppressed. Therefore, according to the light-emitting device shown in FIG. 1, it is possible to provide a light-emitting device having a CSP structure that is inexpensive and highly reliable.
  • the surface electrode 80 is disposed on the light extraction surface. For this reason, unlike the case where the second electrode wiring 72 is disposed on the lower surface of the light emitting element 20, it is not necessary to expose the second semiconductor layer 23 on the lower surface of the light emitting element 20. Thereby, the area of the first semiconductor layer 21 can be made as large as that of the second semiconductor layer 23. As a result, the series resistance of the light emitting device is reduced, and a reliable light emitting device with high yield can be realized. In addition, the area of the surface electrode 80 can be set very small compared with the whole area of the light extraction surface of the light emitting element 20. For this reason, the fall of the light extraction efficiency by having arrange
  • the surface electrode 80 for example, an Au film is used.
  • a transparent electrode may be used for the surface electrode 80.
  • a transparent electrode such as a ZnO film or an ITO film for the surface electrode 80, a decrease in light extraction efficiency can be suppressed.
  • the light transmissive film 110 functions as a sealing material for the light emitting element 20 and a lens of the light emitting device.
  • a thermoplastic resin or a thermosetting resin can be used for the light transmissive film 110.
  • a transparent resin for the light transmissive film 110 the output light L having the same color as the light emitted from the light emitting element 20 can be output from the light emitting device.
  • a phosphor resin containing a phosphor that is excited by the light emitted from the light emitting element 20 to emit excitation light may be used for the light transmissive film 110.
  • a phosphor resin for the light transmissive film 110 output light L having a desired color can be output from the light emitting device.
  • an epoxy resin, a modified epoxy resin, a silicone resin, a modified silicone resin, or the like can be used as the transparent resin used for the light transmissive film 110.
  • a silicone resin having high heat resistance is used in a high-power light-emitting device such as a lighting application.
  • a fluorescent resin having high heat resistance is used in a high-power light-emitting device such as a lighting application.
  • what mixed the fluorescent material in the said transparent resin etc. can be used as fluorescent substance resin.
  • each layer constituting the light-emitting element 20 is formed on a semiconductor substrate 200 having a thickness of about 700 ⁇ m by an epitaxial growth method or the like. That is, the second semiconductor layer 23, the light emitting layer 22, and the first semiconductor layer 21 are sequentially stacked on the semiconductor substrate 200.
  • a nitride compound semiconductor layer such as gallium nitride is used.
  • the second metal film 30 is formed so as to be in contact with the first semiconductor layer 21.
  • the second metal film 30 is patterned so that the outer edge portion of the second metal film 30 is located inside the outer edge portion of the first semiconductor layer 21.
  • the first metal film 40 is formed on the surface of the second metal film 30 so as to cover the exposed surface of the second metal film 30. Thereafter, as shown in FIG. 3, an element-side bonded metal film 51 is formed on the surface of the first metal film 40.
  • the support substrate 10 having the first electrode wiring 71 and the substrate-side bonded metal film 52 formed on the upper surface is prepared.
  • the support substrate 10 is, for example, a resin substrate, and has a region where the first electrode 61 and the second electrode 62 are formed on the side surface.
  • the first electrode wiring 71 and the substrate-side bonded metal film 52 are disposed in a region sandwiched between the first electrode 61 and the second electrode 62. At this time, the end portion of the first electrode wiring 71 is connected to the first electrode 61.
  • the first electrode 61 and the second electrode 62 are formed by, for example, copper (Cu) plating.
  • the material of the power supply electrode is selected in consideration of the overall strength of the light emitting device.
  • an Al material or the like may be used for the power supply electrode.
  • Etching is performed by a back grinding process in which the surface of the support substrate 10 is polished in the film thickness direction until the thickness of the support substrate 10 reaches a predetermined value. As a result, as shown in FIG. 4, the lower surfaces of the first electrode 61 and the second electrode 62 are exposed below the lower surface of the support substrate 10.
  • the element-side bonded metal film 51 and the substrate-side bonded metal film 52 are bonded together, and the light emitting element 20 and the support substrate 10 are integrated.
  • the semiconductor substrate 200 is deleted from the light emitting element 20.
  • the semiconductor substrate 200 is a silicon substrate
  • the semiconductor substrate 200 is deleted by wet etching using hydrofluoric acid.
  • a laser lift-off method or the like is used.
  • an insulating protective film 100 is formed so as to cover the base disposed on the surface of the support substrate 10. That is, the periphery of the light emitting element 20, the first metal film 40, the bonded metal film 50, and the first electrode wiring 71 is covered with the light-transmitting insulating protective film 100.
  • the second electrode wiring 72 is formed so as to fill the opening of the insulating protective film 100.
  • the second electrode wiring 72 having one end connected to the surface electrode 80 is formed from the upper surface of the insulating protective film 100 so that the other end is connected to the second electrode 62. Arranged across the side. Note that a gold (Au) film or the like is used for the electrode wiring, but an aluminum (Al) film or a silver (Ag) film is also used.
  • connection electrode 91 is formed so as to cover the lower surface of the first electrode 61
  • second connection electrode 92 is formed so as to cover the lower surface of the second electrode 62.
  • the first connection electrode 91 and the second connection electrode 92 are arranged on the mounting substrate when the light emitting device is attached to the mounting substrate such as a printed circuit board.
  • the wiring pattern is used to connect the power supply electrode of the light emitting device.
  • a solder electrode or the like is preferably used as the connection electrode.
  • a light transmissive film 110 is formed on the support substrate 10 and the power supply electrode. Then, a singulation process for separating the light emitting devices individually by dicing is performed. Thus, the light emitting device shown in FIG. 1 is completed.
  • a structure in which the element-side bonded metal film 51 and the substrate-side bonded metal film 52 are bonded together is the bonded metal film 50 shown in FIG. That is, in the above manufacturing method, the element-side bonded metal film 51 and the substrate-side bonded metal film 52 are bonded together in order to integrate the support substrate 10 and the light emitting element 20.
  • a metal used as a barrier metal or a metal used for bonding can be used for the laminated metal film 50.
  • metals such as Ti, Au, Sn, nickel (Ni), chromium (Cr), gallium (Ga), indium (In), bismuth (Bi), Cu, Ag, and tantalum (Ta), or alloys thereof, Used for the laminated metal film 50.
  • the element-side bonded metal film 51 and the substrate-side bonded metal film 52 may be made of the same material or different materials.
  • the support substrate 10 and the light emitting element 20 are integrated with each other at a temperature of 300 ° C. or less and in a short time.
  • AuSn is used for the element-side bonded metal film 51 and the substrate-side bonded metal film 52.
  • the method for manufacturing a light emitting device according to the embodiment of the present invention as described above, it is possible to realize a light emitting device in which the occurrence of migration in the second metal film 30 is suppressed. Moreover, the structure where the whole light emitting element 20 is supported by the support substrate 10 from the downward direction is realizable. For this reason, it is suppressed that the stress by distortion is added to the light emitting element 20.
  • the mechanical strength of the light emitting element 20 can be reinforced to realize a highly reliable light emitting device. Further, since the semiconductor substrate 200 is removed during the manufacturing process, the height of the light emitting device can be reduced. Furthermore, removal of the semiconductor substrate 200 improves the light extraction efficiency from the light emitting element 20.
  • the support substrate 10 is a resin substrate
  • a material having higher mechanical strength than the resin for the support substrate 10 This is because in the light emitting device having the CSP structure, the semiconductor substrate 200 is omitted, and a material having low mechanical strength such as epoxy resin or silicone resin is used for the light transmissive film 110, so that the mechanical strength of the entire package is low. .
  • a material having high mechanical strength for the support substrate 10 is effective in increasing the mechanical strength of the light emitting device.
  • a liquid ceramic material is formed into a predetermined shape and then baked at a high temperature.
  • the mechanical strength of the light emitting device is improved. Furthermore, since the ceramic substrate is disposed so as to support substantially the entire lower surface of the light emitting element 20, it is possible to prevent the light emitting element 20 from being damaged due to distortion during manufacturing in the process of removing the semiconductor substrate 200 or the like. Further, it is possible to prevent the light emitting element 20 from being damaged by an impact applied to the light emitting device during product assembly or handling. As described above, by using the support substrate 10 as the ceramic substrate, it is possible to suppress damage to the light emitting device and deterioration of reliability. In addition, it is possible to suppress damage due to thermal distortion caused by solder heat treatment during product assembly.
  • the support substrate 10 is formed so that the lower surface of the first electrode 61 and the lower surface of the second electrode 62 are located below the lower surface of the support substrate 10.
  • the step between the lower surface of the support substrate 10 and the lower surface of the power supply electrode is set to about 10 ⁇ m.
  • the power supply electrode is disposed so as to penetrate the support substrate 10 at a location where the dicing blade passes in dicing for singulation processing.
  • the power supply electrode is mainly cut from the support substrate 10 by the dicing blade. For this reason, the processing time of dicing when a ceramic substrate is used is reduced. Further, since the life of the dicing blade is extended, the manufacturing cost can be reduced.
  • the power electrode is disposed on the side surface of the support substrate 10, and the above-described effect can be obtained by mainly cutting the power electrode in dicing.
  • the stress applied to the light emitting element 20 greatly affects the characteristics of the light emitting device.
  • the light emitting device having the CSP structure has a structure in which the light emitting element 20 is in close contact with the package material, stress is easily applied to the light emitting element 20 due to a difference in linear expansion coefficient from the package material or deformation during processing.
  • the first ceramic layer 11 and the second ceramic layer 12 having a higher density and a larger linear expansion coefficient than the first ceramic layer 11 are laminated on the support substrate 10.
  • a ceramic substrate having a structure may be used.
  • the first ceramic layer 11 having a low linear expansion coefficient and a low density is disposed on the side close to the light emitting element 20. That is, the first ceramic layer 11 having a linear expansion coefficient close to that of the semiconductor layer constituting the light emitting element 20 is disposed on the side close to the light emitting element 20. Thereby, the distortion at the time of hardening a ceramic is relieved and the stress added to the light emitting element 20 can be reduced.
  • the second ceramic layer 12 having a large linear expansion coefficient is provided on the side of the support substrate 10 that is far from the light emitting element 20, so that the warp of the support substrate 10 is suppressed and the strength of the entire package is prevented from being lowered. it can. Therefore, by using the support substrate 10 having the structure shown in FIG. 7, a highly reliable and highly efficient light-emitting device can be realized.
  • first ceramic layer 11 and the second ceramic layer 12 for example, a method in which two ceramic sheets (green sheets) having different linear expansion coefficients are bonded to each other, or two coating ceramics are used.
  • the method of layering can be used.
  • the first ceramic layer 11 and the second ceramic layer 12 can be formed by an inexpensive method.
  • the glass substrate when a glass substrate is used for the light transmissive film 110, the glass substrate has a high elastic coefficient and a large difference in linear expansion coefficient.
  • the linear expansion coefficient of the first ceramic layer 11 can be made closer to glass by making the linear expansion coefficient of the first ceramic layer 11 smaller than that of the second ceramic layer 12. Thereby, the stress added to the light emitting element 20 can be reduced.
  • a part of the upper portion of the support substrate 10 is extended above the first electrode 61 and above the second electrode 62. That is, the first electrode 61 and the second electrode 62 are disposed below the upper surface of the support substrate 10.
  • the first electrode wiring 71 and the second electrode wiring 72 have a portion that passes through the inside of the support substrate 10 outside the light emitting element 20 in a plan view. Thereby, the emitted light of the light emitting element 20 is reflected on the exposed upper surface of the support substrate 10.
  • the first electrode wiring 71 and the second electrode wiring 72 has a structure in which a part of the first electrode wiring 71 and the second electrode wiring 72 is arranged between the first ceramic layer 11 and the second ceramic layer 12. That is, the first electrode wiring 71 connected to the end portion of the bonded metal film 50 has the first ceramic layer extending from the light emitting element 20 to the boundary between the first ceramic layer 11 and the second ceramic layer 12 in a plan view. 11 is stretched in the film thickness direction. The end portion of the first electrode wiring 71 extending along the boundary between the first ceramic layer 11 and the second ceramic layer 12 is connected to the first electrode 61.
  • the second electrode wiring 72 disposed on the side surface of the insulating protective film 100 has the first ceramic extending from the light emitting element 20 to the boundary between the first ceramic layer 11 and the second ceramic layer 12 in a plan view. It extends through the layer 11 in the film thickness direction. Then, the end of the second electrode wiring 72 extending along the boundary between the first ceramic layer 11 and the second ceramic layer 12 is connected to the second electrode 62.
  • the light emitted from the light emitting element 20 is reflected on the exposed upper surface of the support substrate 10 by passing the first electrode wiring 71 and the second electrode wiring 72 through the inside of the support substrate 10.
  • luminance of a light-emitting device improves.
  • the first electrode wiring 71 is not arranged below the light emitting element 20. For this reason, the stress added to the light emitting element 20 is suppressed.
  • the upper surface of the support substrate 10 is exposed by disposing the first electrode wiring 71 and the second electrode wiring 72 inside the support substrate 10. Can be made.
  • FIG. 1 illustrates an example in which the second semiconductor layer 23 and the second electrode 62 are electrically connected via the surface electrode 80 disposed on the upper surface of the second semiconductor layer 23 of the light emitting element 20.
  • the second electrode wiring 72 that connects the second semiconductor layer 23 and the second electrode 62 is electrically connected to the lower surface of the second semiconductor layer 23. Has been.
  • the second semiconductor layer 23 has a stretched region that extends in the horizontal direction to a region where the first semiconductor layer 21 and the light emitting layer 22 are not arranged in plan view.
  • the second electrode wiring 72 is connected to the lower surface of the extended region of the second semiconductor layer 23.
  • the light emitted from the light emitting element 20 is emitted from the entire surface of the light extraction surface. For this reason, an effective light extraction surface can be widened.
  • the bonded metal film 50 may not be used. That is, as shown in FIG. 10, the first electrode wiring 71 and the first metal film 40 are directly bonded to each other so that the bonded metal film 50 is not disposed between the support substrate 10 and the light emitting element 20. A device is feasible. Further, instead of the laminated metal film 50, a resin adhesive having conductivity may be used.
  • the electrode wiring may be passed through the support substrate 10 as shown in FIG. 10 as well.
  • the semiconductor device of the present invention can be used for a light-emitting device having a CSP structure.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
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Abstract

L'invention concerne un dispositif électroluminescent ayant une structure CSP, le dispositif électroluminescent comprenant : un substrat de support 10; un premier film métallique 40 disposé sur le substrat de support 10; un second film métallique 30 intégré dans une partie supérieure du premier film métallique 40 et ayant des surfaces latérales et une surface inférieure recouverte par le premier film métallique 40; et un élément électroluminescent 20 qui recouvre la surface supérieure du second film métallique 30 et est disposé sur le premier film métallique 40. Le second film métallique 30 a une réflectivité plus élevée pour la lumière sortant de l'élément électroluminescent 20 que le premier film métallique 40, et la migration est moins susceptible de se produire dans le premier film métallique 40 que dans le second film métallique 30.
PCT/JP2016/087787 2016-12-19 2016-12-19 Dispositif électroluminescent WO2018116350A1 (fr)

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JP2017529104A JP6414334B1 (ja) 2016-12-19 2016-12-19 発光装置
PCT/JP2016/087787 WO2018116350A1 (fr) 2016-12-19 2016-12-19 Dispositif électroluminescent

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Application Number Priority Date Filing Date Title
PCT/JP2016/087787 WO2018116350A1 (fr) 2016-12-19 2016-12-19 Dispositif électroluminescent

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WO2018116350A1 true WO2018116350A1 (fr) 2018-06-28

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Citations (5)

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JP2007042952A (ja) * 2005-08-04 2007-02-15 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子
JP2011166150A (ja) * 2010-02-11 2011-08-25 Lg Innotek Co Ltd 発光素子
JP2014158001A (ja) * 2013-02-18 2014-08-28 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子およびその製造方法
JP2015159203A (ja) * 2014-02-25 2015-09-03 スタンレー電気株式会社 半導体発光装置
JP2016207924A (ja) * 2015-04-27 2016-12-08 日亜化学工業株式会社 発光装置及びその製造方法

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