WO2018112992A1 - 有机发光器件及其制作方法 - Google Patents

有机发光器件及其制作方法 Download PDF

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Publication number
WO2018112992A1
WO2018112992A1 PCT/CN2016/112161 CN2016112161W WO2018112992A1 WO 2018112992 A1 WO2018112992 A1 WO 2018112992A1 CN 2016112161 W CN2016112161 W CN 2016112161W WO 2018112992 A1 WO2018112992 A1 WO 2018112992A1
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Prior art keywords
layer
light
hole transport
emitting
transport layer
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French (fr)
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徐湘伦
赵梦
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US15/504,332 priority Critical patent/US10192933B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/156—Hole transporting layers comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers

Definitions

  • the invention belongs to the field of organic electroluminescence technology, and in particular to an organic light emitting device and a manufacturing method thereof.
  • OLED Organic Light-Emitting Diode
  • organic light emitting diodes are composed of a multilayer structure having different functions.
  • the inherent properties of the materials used in each layer structure and their compatibility with the materials used in other layer structures are very important.
  • a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), an electron injection layer (EIL), and the like are generally included.
  • the thickness of different layer structures can be adjusted to adjust the microcavity effect of the OLED component, thereby improving the light extraction efficiency and adjusting the light of each color. The effect of narrowing the spectral width.
  • the spectral width of the light emitted by the three color light-emitting layers can be adjusted by adjusting the thickness of the hole transport layer corresponding to the red, green, and blue light-emitting layers to achieve the effect of balancing colors.
  • the hole transport layer cannot be vapor-deposited as a common layer, and it is necessary to increase the use of a fine metal mask. This not only increases the time of the process, but also greatly increases the cost of the organic light-emitting diode due to problems in the cleaning of the metal mask.
  • the fabrication success rate of the organic light emitting diode is greatly reduced.
  • An object of the present invention to provide a feature that can be omitted.
  • a method for fabricating an organic light emitting device includes the steps of: fabricating a bottom electrode on a substrate substrate; and fabricating an organic electrochemistry on the bottom electrode by an evaporation technique and a photolithography technique a light emitting component; a top electrode is fabricated on the organic electroluminescent component.
  • the method for fabricating an organic electroluminescent device on the bottom electrode by using an evaporation technique and a photolithography technique includes the steps of: vapor-depositing a hole injection layer on the bottom electrode; Forming, on the hole injection layer, a hole transport layer corresponding to each of the light emitting layers capable of emitting light of different colors; depositing a corresponding light emitting layer on the hole transport layer; and steaming on the light emitting layer An electron transport layer is plated; an electron injection layer is deposited on the electron transport layer.
  • the light emitting layer capable of emitting different colors comprises: a first light emitting layer capable of emitting red light, a second light emitting layer capable of emitting green light, and a third light emitting layer capable of emitting blue light.
  • the method for fabricating a hole transport layer corresponding to the first light-emitting layer capable of emitting red light on the hole injection layer by using a desired thickness of the resonant mode comprises the step of: a thickness corresponding to the resonance mode of the hole transport layer corresponding to the layer, evaporating the organic material layer on the hole injection layer; coating the photoresist layer on the organic material layer; using the first exposure mask to the photoresist The layer is exposed; the first exposure mask is transparent to a portion of the first luminescent layer, and the remaining portion is opaque; and the exposed photoresist layer is developed to expose the unilluminated photoresist layer Removing; removing the organic material layer not covered by the photoresist layer; peeling off the illuminated photoresist layer to form a hole transport layer corresponding to the first light-emitting layer.
  • the method for fabricating a hole transport layer corresponding to the second light-emitting layer capable of emitting green light on the hole injection layer by using a desired thickness of the resonant mode includes the step of: performing the second light emission a thickness corresponding to the resonance mode of the hole transport layer corresponding to the layer, evaporating the organic material layer on the hole injection layer; coating the photoresist layer on the organic material layer; and using the second exposure mask to the photoresist The layer is exposed; the second exposure mask is transparent to a portion of the second luminescent layer, and the remaining portion is opaque; and the exposed photoresist layer is developed to expose the unilluminated photoresist layer Removing; removing the organic material layer not covered by the photoresist layer; peeling off the illuminated photoresist layer to form a hole transport layer corresponding to the second light-emitting layer.
  • the method for fabricating a hole transport layer corresponding to the third light emitting layer capable of emitting green light on the hole injection layer by using a desired thickness of the resonant mode comprises the step of: performing the third light emitting a thickness corresponding to the resonance mode of the hole transport layer corresponding to the layer, evaporating the organic material layer on the hole injection layer; coating the photoresist layer on the organic material layer; using the third exposure mask to the photoresist The layer is exposed; the third exposure mask is transparent to a portion of the third luminescent layer, and the remaining portion is opaque; and the exposed photoresist layer is developed to expose the unilluminated photoresist layer Removing; removing the organic material layer not covered by the photoresist layer; peeling off the illuminated photoresist layer to form a hole transport layer corresponding to the third light-emitting layer.
  • the photoresist layer is made of a negative photoresist material.
  • a thickness required for a resonant mode of the hole transport layer corresponding to the third light emitting layer is greater than a thickness required for a resonant mode of the hole transport layer corresponding to the second light emitting layer, and the second light emitting layer corresponds to The required thickness of the hole transport layer resonant mode is greater than the thickness required for the hole transport layer resonant mode of the first light-emitting layer.
  • one of the bottom electrode and the apex is transparent or translucent and the other is opaque and reflective.
  • an organic light-emitting device fabricated by the above-described fabrication method is also provided.
  • the present invention utilizes photolithography technology to fabricate a hole transport layer corresponding to each light emitting layer, thereby eliminating the need for a fine metal mask, saving process cost and time, and also improving organic light emission. The performance of the device.
  • FIG. 1A through 1C are process diagrams of an organic light emitting device according to an embodiment of the present invention.
  • FIGS. 2A through 2E are process diagrams of an organic electroluminescent device in accordance with an embodiment of the present invention.
  • 3A to 3F are diagrams of a hole transport layer corresponding to a first light-emitting layer according to an embodiment of the present invention.
  • 4A to 4F are process diagrams of a hole transport layer corresponding to a second light emitting layer according to an embodiment of the present invention.
  • 5A through 5F are process diagrams of a hole transport layer corresponding to a third light emitting layer, in accordance with an embodiment of the present invention.
  • An organic electroluminescent device refers to one or more organic layers between two electrodes that emit light at an applied voltage.
  • FIG. 1A through 1C are process diagrams of an organic light emitting device according to an embodiment of the present invention.
  • a bottom electrode 210 is formed on a substrate substrate 100.
  • Substrate substrate 100 can be transparent or opaque.
  • the substrate substrate 100 has a light transmitting property for observing the light emission of the organic electroluminescent device through the substrate substrate 100.
  • Transparent glass or plastic is usually used in this case.
  • the substrate substrate 100 may be light transmissive, light absorbing or reflective for viewing the illumination of the organic electroluminescent device through the top electrode.
  • Materials for use in this case include, but are not limited to, glass, plastic, semiconductor materials, ceramics, circuit board materials, or any other suitable material.
  • the bottom electrode 210 is most typically provided as an anode.
  • the bottom electrode 210 is also a mirror.
  • the bottom electrode 210 may be made of a reflective metal and should be thin enough to have a partial transmittance at the wavelength of the emitted light, which is called a half.
  • the transparent, or bottom electrode 210 may be made of a transparent metal oxide such as indium tin oxide or zinc tin oxide.
  • the bottom electrode 210 can be made of a reflective metal and should be thick enough to be substantially opaque and to be a full mirror.
  • an organic electroluminescent device 300 (or an organic EL device) is formed on the bottom electrode 210 by an evaporation technique and a photolithography technique.
  • the method of fabricating the organic electroluminescent device 300 will be specifically described below.
  • FIGS. 2A through 2E are process diagrams of an organic electroluminescent device in accordance with an embodiment of the present invention.
  • a hole injection layer (HIL) 310 is deposited on the bottom electrode 210.
  • the hole injection layer 310 can be used to improve the film formation properties of the subsequent organic layer and to facilitate injection of holes into the hole transport layer (HTL).
  • hole-transport layers 320A, 320B, and 320C corresponding to respective light-emitting layers capable of emitting light of different colors are formed on the hole injection layer 310 by a photolithographic technique in accordance with a desired thickness of the resonant mode.
  • the hole transport layers 320A, 320B, and 320C are spaced apart from each other.
  • the light-emitting layer capable of emitting light of different colors includes a first light-emitting layer 330A capable of emitting red light, a second light-emitting layer 330B capable of emitting green light, and a third light-emitting layer 330C capable of emitting blue light.
  • the method of fabricating the hole transport layers 320A, 320B, and 320C will be specifically described below. It should be noted that the present invention does not specifically define the order in which the hole transport layers 320A, 320B, and 320C are fabricated.
  • 3A through 3F are process diagrams of a hole transport layer corresponding to a first light emitting layer, in accordance with an embodiment of the present invention.
  • the organic material layer OG is vapor-deposited on the hole injection layer 310 in accordance with the thickness required for the resonant mode of the hole transport layer 320A corresponding to the first light-emitting layer 330A.
  • a photoresist layer PR is coated on the organic material layer OG.
  • the photoresist layer PR is made of a negative photoresist material.
  • the photoresist layer PR is exposed by the first exposure mask 410.
  • the first exposure mask 410 is transparent to a portion of the first light-emitting layer 330A, and the remaining portion is opaque.
  • the exposed photoresist layer PR is developed to remove the unexposed photoresist layer PR.
  • the developer used here is compatible with the organic material used in the organic material layer OG, Will destroy the organic material layer OG.
  • the organic material layer OG not covered by the photoresist layer PR is etched away.
  • the light-shielding photoresist layer PR is peeled off, thereby forming a hole transport layer 320A corresponding to the first light-emitting layer 330A.
  • the stripping solution used here is compatible with the organic material used in the organic material layer OG, and does not damage the organic material layer OG.
  • FIGS. 4A through 4F are process diagrams of a hole transport layer corresponding to a second light emitting layer, in accordance with an embodiment of the present invention.
  • the organic material layer OG is vapor-deposited on the hole injection layer 310 in accordance with the thickness required for the resonant mode of the hole transport layer 320B corresponding to the second light-emitting layer 330B.
  • the thickness required for the resonant mode of the hole transport layer 320B corresponding to the second light-emitting layer 330B is greater than the thickness required for the resonant mode of the hole transport layer 320A corresponding to the first light-emitting layer 330A.
  • a photoresist layer PR is coated on the organic material layer OG.
  • the photoresist layer PR is made of a negative photoresist material.
  • the photoresist layer PR is exposed by the second exposure mask 420.
  • the second exposure mask 420 is transparent to a portion of the second light-emitting layer 330B, and the remaining portion is opaque.
  • the exposed photoresist layer PR is developed to remove the unexposed photoresist layer PR.
  • the developer used here is compatible with the organic material used for the organic material layer OG, and does not damage the organic material layer OG.
  • the organic material layer OG not covered by the photoresist layer PR is etched away.
  • the light-shielding photoresist layer PR is peeled off, thereby forming a hole transport layer 320B corresponding to the second light-emitting layer 330B.
  • the stripping solution used here is compatible with the organic material used in the organic material layer OG, and does not damage the organic material layer OG.
  • 5A through 5F are process diagrams of a hole transport layer corresponding to a third light emitting layer, in accordance with an embodiment of the present invention.
  • the hole modality of the hole transport layer 320C corresponding to the third light-emitting layer 330C is required to be thick.
  • the organic material layer OG is vapor-deposited on the hole injection layer 310.
  • the thickness required for the resonant mode of the hole transport layer 320C corresponding to the third light-emitting layer 330C is greater than the thickness required for the resonant mode of the hole transport layer 320B corresponding to the second light-emitting layer 330B.
  • a photoresist layer PR is coated on the organic material layer OG.
  • the photoresist layer PR is made of a negative photoresist material.
  • the photoresist layer PR is exposed by the third exposure mask 430.
  • the third exposure mask 430 is transparent to a portion of the third light-emitting layer 330C, and the remaining portion is opaque.
  • the exposed photoresist layer PR is developed to remove the unexposed photoresist layer PR.
  • the developer used here is compatible with the organic material used for the organic material layer OG, and does not damage the organic material layer OG.
  • the organic material layer OG not covered by the photoresist layer PR is etched away.
  • the light-shielding photoresist layer PR is peeled off, thereby forming a hole transport layer 320C corresponding to the third light-emitting layer 330C.
  • the stripping solution used here is compatible with the organic material used in the organic material layer OG, and does not damage the organic material layer OG.
  • a corresponding light-emitting layer is deposited on each of the hole transport layers.
  • the first light-emitting layer 330A is vapor-deposited on the hole transport layer 320A
  • the second light-emitting layer 330B is vapor-deposited on the hole transport layer 320B
  • the third light-emitting layer 330C is vapor-deposited on the hole transport layer 320C.
  • the first luminescent layer 330A, the second luminescent layer 330B, and the third luminescent layer 330C may be formed by vapor deposition in a time-sharing manner or simultaneously.
  • light of respective colors is emitted due to recombination of holes and electrons.
  • an electron transport layer 340 is simultaneously vapor-deposited on each of the light-emitting layers.
  • an electron injection layer 350 is deposited on the electron transport layer 340.
  • FIGS. 2A to 2E illustrate a method of fabricating an embodiment of the organic electroluminescent device of the present invention, but the organic electroluminescent device of the present invention is not limited to the structure fabricated by the fabrication method shown in FIGS. 2A to 2E. However, at least the respective light-emitting layers should be included in the organic electroluminescent device.
  • a top electrode 220 is fabricated on the electron injection layer 350 of the organic electroluminescent device 300.
  • the top electrode 220 is most typically provided as a cathode.
  • the top electrode 220 is also a mirror.
  • the top electrode 220 may be made of a reflective metal and should be thin enough to have a partial transmittance at the wavelength of the emitted light, which is referred to as translucency.
  • the top electrode 220 may be made of a transparent metal oxide such as indium tin oxide or zinc tin oxide.
  • the top electrode 220 can be made of a reflective metal and should be thick enough to be substantially opaque and to be a full mirror.
  • the organic light-emitting device and the manufacturing method thereof use the photolithography technology to fabricate the hole transport layer corresponding to each light-emitting layer, thereby eliminating the need for using a fine metal mask. Process cost and time, while also improving the performance of organic light-emitting devices.

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  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

提供一种有机发光器件的制作方法和利用该制作方法制作的有机发光器件。该方法包括步骤：在衬底基材（100）上制作底电极（210）；利用蒸镀技术以及光刻技术在底电极（210）上制作有机电致发光组件（300）；在有机电致发光组件（300）上制作顶电极（220）。利用光刻技术制作各发光层对应的空穴传输层，从而无需使用精细金属掩膜板，节省了工艺成本和时间，提高了有机发光器件的性能。

Description

有机发光器件及其制作方法 技术领域
本发明属于有机电致发光技术领域，具体地讲，涉及一种有机发光器件及其制作方法。
背景技术
近年来，有机发光二极管(Organic Light-Emitting Diode，OLED)成为国内外非常热门的新兴平面显示器产品，这是因为OLED显示器具有自发光、广视角(达175°以上)、短反应时间(1μs)、高发光效率、广色域、低工作电压(3～10V)、薄厚度(可小于1mm)、可制作大尺寸与可挠曲的面板及制程简单等特性，而且它还具有低成本的潜力。
目前，有机发光二极管由具有不同功能的多层结构组成。每层结构所采用材料的固有属性及其与其他层结构所采用材料的兼容性是非常重要的。在多层结构中，通常包括空穴注入层(HIL)、空穴传输层(HTL)、发光层(EML)、电子传输层(ETL)以及电子注入层(EIL)等。在基于红、绿、蓝三色的彩色有机发光二极管(multi-color OLED)中，可以调节不同层结构的厚度来调节OLED元器件的微腔效应，达到提高出光效率和调节每种颜色光的谱宽(spectral width)窄化的作用。例如，可以通过调节红、绿、蓝三种颜色发光层对应的空穴传输层的厚度来调整三种颜色发光层出射光的谱宽，达到平衡颜色的效果。在这种设计中，空穴传输层就不能够作为公共层(common layer)来蒸镀，需要增加使用精细金属掩膜版(Fine metal mask)。这样不仅增加了流程工艺的时间，而且由于金属掩膜板清洗方面的问题，大大增加了有机发光二极管的成本。此外，由于精细金属掩膜版使用中存在对准的问题(alignment issue)，会大大降低有机发光二极管的制作成功率。
发明内容
为了解决上述现有技术存在的问题，本发明的目的在于提供一种能够省去 使用精细金属掩膜版的有机发光器件及其制作方法。
根据本发明的一方面，提供了一种有机发光器件的制作方法，其包括步骤：在衬底基材上制作底电极；利用蒸镀技术以及光刻技术在所述底电极上制作有机电致发光组件；在所述有机电致发光组件上制作顶电极。
可选地，利用蒸镀技术以及光刻技术在所述底电极上制作有机电致发光组件的方法包括步骤：在所述底电极上蒸镀空穴注入层；按共振模态所需厚度在所述空穴注入层上利用光刻技术制作能够发出不同颜色光线的发光层各自对应的空穴传输层；在所述空穴传输层上蒸镀对应的发光层；在所述发光层上蒸镀电子传输层；在所述电子传输层上蒸镀电子注入层。
可选地，所述能够发出不同颜色的发光层包括：能够发出红色光线的第一发光层、能够发出绿色光线的第二发光层以及能够发出蓝色光线的第三发光层。
可选地，按共振模态所需厚度在所述空穴注入层上利用光刻技术制作能够发出红色光线的第一发光层对应的空穴传输层的方法包括步骤：按所述第一发光层对应的空穴传输层共振模态所需厚度在所述空穴注入层上蒸镀有机材料层；在有机材料层上涂布覆盖光阻层；利用第一曝光光罩对所述光阻层进行曝光；所述第一曝光光罩相对于所述第一发光层的部分透光，其余部分不透光；对经曝光后的光阻层进行显影，以将未被光照的光阻层去除；将未被光阻层覆盖的有机材料层刻蚀去除；将被光照的光阻层剥离，从而形成所述第一发光层对应的空穴传输层。
可选地，按共振模态所需厚度在所述空穴注入层上利用光刻技术制作能够发出绿色光线的第二发光层对应的空穴传输层的方法包括步骤：按所述第二发光层对应的空穴传输层共振模态所需厚度在所述空穴注入层上蒸镀有机材料层；在有机材料层上涂布覆盖光阻层；利用第二曝光光罩对所述光阻层进行曝光；所述第二曝光光罩相对于所述第二发光层的部分透光，其余部分不透光；对经曝光后的光阻层进行显影，以将未被光照的光阻层去除；将未被光阻层覆盖的有机材料层刻蚀去除；将被光照的光阻层剥离，从而形成所述第二发光层对应的空穴传输层。
可选地，按共振模态所需厚度在所述空穴注入层上利用光刻技术制作能够发出绿色光线的第三发光层对应的空穴传输层的方法包括步骤：按所述第三发光层对应的空穴传输层共振模态所需厚度在所述空穴注入层上蒸镀有机材料层；在有机材料层上涂布覆盖光阻层；利用第三曝光光罩对所述光阻层进行曝光；所述第三曝光光罩相对于所述第三发光层的部分透光，其余部分不透光；对经曝光后的光阻层进行显影，以将未被光照的光阻层去除；将未被光阻层覆盖的有机材料层刻蚀去除；将被光照的光阻层剥离，从而形成所述第三发光层对应的空穴传输层。
可选地，所述光阻层采用负光阻材料制作。
可选地，所述第三发光层对应的空穴传输层共振模态所需厚度大于所述第二发光层对应的空穴传输层共振模态所需厚度，并且所述第二发光层对应的空穴传输层共振模态所需厚度大于所述第一发光层对应的空穴传输层共振模态所需厚度。
可选地，所述底电极和所述顶点极中的一个是透明的或半透明的，另一个是不透明且反射光的。
根据本发明的另一方面，还提供了一种利用上述制作方法制作的有机发光器件。
本发明的有益效果：本发明利用光刻技术制作各发光层对应的空穴传输层，从而无需使用精细金属掩膜版(Fine metal mask)，节省了工艺成本和时间，同时也提高了有机发光器件的性能。
附图说明
通过结合附图进行的以下描述，本发明的实施例的上述和其它方面、特点和优点将变得更加清楚，附图中：
图1A至图1C是根据本发明的实施例的有机发光器件的制程图；
图2A至图2E是根据本发明的实施例的有机电致发光组件的制程图；
图3A至图3F是根据本发明的实施例的第一发光层对应的空穴传输层的制 程图；
图4A至图4F是根据本发明的实施例的第二发光层对应的空穴传输层的制程图；
图5A至图5F是根据本发明的实施例的第三发光层对应的空穴传输层的制程图。
具体实施方式
以下，将参照附图来详细描述本发明的实施例。然而，可以以许多不同的形式来实施本发明，并且本发明不应该被解释为限制于这里阐述的具体实施例。相反，提供这些实施例是为了解释本发明的原理及其实际应用，从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。
在附图中，为了清楚器件，夸大了层和区域的厚度。相同的标号在整个说明书和附图中表示相同的元器件。
有机电致发光组件(或称有机EL元件)是指处于两个电极之间的一个或多个有机层，它们在外加电压下发光。
图1A至图1C是根据本发明的实施例的有机发光器件的制程图。
参照图1A，在衬底基材100上制作底电极210。
衬底基材100可以是透明的或者不透明的。对于通过衬底基材100观察有机电致发光组件发光来说，衬底基材100是具有透光性质。在此情况下通常使用透明玻璃或塑料。对于通过顶电极观察有机电致发光组件发光来说，衬底基材100的可以是透光的、吸光的或反光的。用于这种情况的材料包括但是不局限于玻璃、塑料、半导体材料、陶瓷、电路板材料或任何其它合适的材料。
底电极210最通常被设置为阳极。底电极210也是反光镜。当通过衬底基材100观察有机电致发光组件发光时，底电极210可以由反射性金属制成，并且应该足够薄以便在发射光的波长下具有部分透光率，这被称为是半透明的，或者底电极210可以由透明的金属氧化物制成，诸如氧化铟锡或氧化锌锡等。 当通过顶电极观察有机电致发光组件发光时，底电极210可以由反射性金属制成，并且应该足够厚，以使其基本上是不透光的且是全反光镜。
参照图1B，利用蒸镀技术及光刻技术在底电极210上制作有机电致发光组件300(或称有机EL元件)。以下对有机电致发光组件300的制作方法进行具体描述说明。
图2A至图2E是根据本发明的实施例的有机电致发光组件的制程图。
参照图2A，在底电极210上蒸镀空穴注入层(HIL)310。空穴注入层310可以用来提高后续有机层的成膜性质，并且有助于将空穴注入到空穴传输层(HTL)中。
参照图2B，按共振模态所需厚度在空穴注入层310上利用光刻技术制作能够发出不同颜色光线的发光层各自对应的空穴传输层320A、320B和320C。其中空穴传输层320A、320B和320C彼此间隔。如图2C所示，能够发出不同颜色光线的发光层包括：能够发出红色光线的第一发光层330A、能够发出绿色光线的第二发光层330B以及能够发出蓝色光线的第三发光层330C。以下对空穴传输层320A、320B和320C的制作方法进行具体描述说明。需要说明的是，本发明并不对空穴传输层320A、320B和320C的制作顺序作具体限定。
图3A至图3F是根据本发明的实施例的第一发光层对应的空穴传输层的制程图。
参照图3A，按第一发光层330A对应的空穴传输层320A共振模态所需厚度在空穴注入层310上蒸镀有机材料层OG。
参照图3B，在有机材料层OG上涂布覆盖光阻层PR。这里光阻层PR采用负光阻材料制成。
参照图3C，利用第一曝光光罩410对光阻层PR进行曝光。这里第一曝光光罩410相对于第一发光层330A的部分透光，其余部分不透光。
参照图3D，对经曝光后的光阻层PR进行显影，以将未被光照的光阻层PR去除。这里所采用的显影液与有机材料层OG所采用的有机材料兼容，不 会破坏有机材料层OG。
参照图3E，将未被光阻层PR覆盖的有机材料层OG刻蚀去除。
参照图3F，将被光照的光阻层PR剥离，从而形成第一发光层330A对应的空穴传输层320A。这里所采用的剥离液与有机材料层OG所采用的有机材料兼容，不会破坏有机材料层OG。
图4A至图4F是根据本发明的实施例的第二发光层对应的空穴传输层的制程图。
参照图4A，按第二发光层330B对应的空穴传输层320B共振模态所需厚度在空穴注入层310上蒸镀有机材料层OG。这里第二发光层330B对应的空穴传输层320B共振模态所需厚度大于第一发光层330A对应的空穴传输层320A共振模态所需厚度。
参照图4B，在有机材料层OG上涂布覆盖光阻层PR。这里光阻层PR采用负光阻材料制成。
参照图4C，利用第二曝光光罩420对光阻层PR进行曝光。这里第二曝光光罩420相对于第二发光层330B的部分透光，其余部分不透光。
参照图4D，对经曝光后的光阻层PR进行显影，以将未被光照的光阻层PR去除。这里所采用的显影液与有机材料层OG所采用的有机材料兼容，不会破坏有机材料层OG。
参照图4E，将未被光阻层PR覆盖的有机材料层OG刻蚀去除。
参照图4F，将被光照的光阻层PR剥离，从而形成第二发光层330B对应的空穴传输层320B。这里所采用的剥离液与有机材料层OG所采用的有机材料兼容，不会破坏有机材料层OG。
图5A至图5F是根据本发明的实施例的第三发光层对应的空穴传输层的制程图。
参照图5A，按第三发光层330C对应的空穴传输层320C共振模态所需厚 度在空穴注入层310上蒸镀有机材料层OG。这里按第三发光层330C对应的空穴传输层320C共振模态所需厚度大于第二发光层330B对应的空穴传输层320B共振模态所需厚度。
参照图5B，在有机材料层OG上涂布覆盖光阻层PR。这里光阻层PR采用负光阻材料制成。
参照图5C，利用第三曝光光罩430对光阻层PR进行曝光。这里第三曝光光罩430相对于第三发光层330C的部分透光，其余部分不透光。
参照图5D，对经曝光后的光阻层PR进行显影，以将未被光照的光阻层PR去除。这里所采用的显影液与有机材料层OG所采用的有机材料兼容，不会破坏有机材料层OG。
参照图5E，将未被光阻层PR覆盖的有机材料层OG刻蚀去除。
参照图5F，将被光照的光阻层PR剥离，从而形成第三发光层330C对应的空穴传输层320C。这里所采用的剥离液与有机材料层OG所采用的有机材料兼容，不会破坏有机材料层OG。
以下继续对有机电致发光组件300的制作方法进行具体描述说明。
继续参照图2C，在各空穴传输层上蒸镀对应的发光层。这里在空穴传输层320A上蒸镀第一发光层330A，在空穴传输层320B上蒸镀第二发光层330B，空穴传输层320C上蒸镀第三发光层330C。其中第一发光层330A、第二发光层330B和第三发光层330C可以分时或同时蒸镀而成。在第一发光层330A、第二发光层330B和第三发光层330C中，由于空穴-电子的重新组合而发出各自对应颜色的光线。
参照图2D，在各发光层上同时蒸镀电子传输层340。
参照图2E，在电子传输层340上蒸镀电子注入层350。
图2A至图2E示出了本发明的有机电致发光组件的一个实施例的制作方法，但本发明的有机电致发光组件并不限制于图2A至图2E所示的制作方法制作的结构，但有机电致发光组件中至少应该包括各发光层。
以下继续对根据本发明的实施例的有机发光器件的制作方法进行具体描述说明。
继续参照图1C，在有机电致发光组件300的电子注入层350上制作顶电极220。
顶电极220最通常被设置为阴极。顶电极220也是反光镜。当通过顶电极220观察有机电致发光组件300发光时，顶电极220可以由反射性金属制成，并且应该足够薄以便在发射光的波长下具有部分透光率，这被称为是半透明的，或者顶电极220可以由透明的金属氧化物制成，诸如氧化铟锡或氧化锌锡等。当通过衬底基材100观察有机电致发光组件300发光时，顶电极220可以由反射性金属制成，并且应该足够厚，以使其基本上是不透光的且是全反光镜。
综上所述，根据本发明的实施例的有机发光器件及其制作方法，利用光刻技术制作各发光层对应的空穴传输层，从而无需使用精细金属掩膜版(Fine metal mask)，节省了工艺成本和时间，同时也提高了有机发光器件的性能。
虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。

Claims (15)

  1. 一种有机发光器件的制作方法，其中，包括步骤：
    在衬底基材上制作底电极；
    利用蒸镀技术以及光刻技术在所述底电极上制作有机电致发光组件；
    在所述有机电致发光组件上制作顶电极。
  2. 根据权利要求1所述的制作方法，其中，利用蒸镀技术以及光刻技术在所述底电极上制作有机电致发光组件的方法包括步骤：
    在所述底电极上蒸镀空穴注入层；
    按共振模态所需厚度在所述空穴注入层上利用光刻技术制作能够发出不同颜色光线的发光层各自对应的空穴传输层；
    在所述空穴传输层上蒸镀对应的发光层；
    在所述发光层上蒸镀电子传输层；
    在所述电子传输层上蒸镀电子注入层。
  3. 根据权利要求2所述的制作方法，其中，所述能够发出不同颜色的发光层包括：能够发出红色光线的第一发光层、能够发出绿色光线的第二发光层以及能够发出蓝色光线的第三发光层。
  4. 根据权利要求3所述的制作方法，其中，按共振模态所需厚度在所述空穴注入层上利用光刻技术制作能够发出红色光线的第一发光层对应的空穴传输层的方法包括步骤：
    按所述第一发光层对应的空穴传输层共振模态所需厚度在所述空穴注入层上蒸镀有机材料层；
    在有机材料层上涂布覆盖光阻层；
    利用第一曝光光罩对所述光阻层进行曝光；所述第一曝光光罩相对于所述第一发光层的部分透光，其余部分不透光；
    对经曝光后的光阻层进行显影，以将未被光照的光阻层去除；
    将未被光阻层覆盖的有机材料层刻蚀去除；
    将被光照的光阻层剥离，从而形成所述第一发光层对应的空穴传输层。
  5. 根据权利要求3所述的制作方法，其中，按共振模态所需厚度在所述空穴注入层上利用光刻技术制作能够发出绿色光线的第二发光层对应的空穴传输层的方法包括步骤：
    按所述第二发光层对应的空穴传输层共振模态所需厚度在所述空穴注入层上蒸镀有机材料层；
    在有机材料层上涂布覆盖光阻层；
    利用第二曝光光罩对所述光阻层进行曝光；所述第二曝光光罩相对于所述第二发光层的部分透光，其余部分不透光；
    对经曝光后的光阻层进行显影，以将未被光照的光阻层去除；
    将未被光阻层覆盖的有机材料层刻蚀去除；
    将被光照的光阻层剥离，从而形成所述第二发光层对应的空穴传输层。
  6. 根据权利要求3所述的制作方法，其中，按共振模态所需厚度在所述空穴注入层上利用光刻技术制作能够发出绿色光线的第三发光层对应的空穴传输层的方法包括步骤：
    按所述第三发光层对应的空穴传输层共振模态所需厚度在所述空穴注入层上蒸镀有机材料层；
    在有机材料层上涂布覆盖光阻层；
    利用第三曝光光罩对所述光阻层进行曝光；所述第三曝光光罩相对于所述第三发光层的部分透光，其余部分不透光；
    对经曝光后的光阻层进行显影，以将未被光照的光阻层去除；
    将未被光阻层覆盖的有机材料层刻蚀去除；
    将被光照的光阻层剥离，从而形成所述第三发光层对应的空穴传输层。
  7. 根据权利要求4所述的制作方法，其中，所述光阻层采用负光阻材料制作。
  8. 根据权利要求5所述的制作方法，其中，所述光阻层采用负光阻材料制作。
  9. 根据权利要求6所述的制作方法，其中，所述光阻层采用负光阻材料制作。
  10. 根据权利要求3所述的制作方法，其中，所述第三发光层对应的空穴传输层共振模态所需厚度大于所述第二发光层对应的空穴传输层共振模态所需厚度，并且所述第二发光层对应的空穴传输层共振模态所需厚度大于所述第一发光层对应的空穴传输层共振模态所需厚度。
  11. 根据权利要求4所述的制作方法，其中，所述第三发光层对应的空穴传输层共振模态所需厚度大于所述第二发光层对应的空穴传输层共振模态所需厚度，并且所述第二发光层对应的空穴传输层共振模态所需厚度大于所述第一发光层对应的空穴传输层共振模态所需厚度。
  12. 根据权利要求5所述的制作方法，其中，所述第三发光层对应的空穴传输层共振模态所需厚度大于所述第二发光层对应的空穴传输层共振模态所需厚度，并且所述第二发光层对应的空穴传输层共振模态所需厚度大于所述第一发光层对应的空穴传输层共振模态所需厚度。
  13. 根据权利要求6所述的制作方法，其中，所述第三发光层对应的空穴传输层共振模态所需厚度大于所述第二发光层对应的空穴传输层共振模态所需厚度，并且所述第二发光层对应的空穴传输层共振模态所需厚度大于所述第一发光层对应的空穴传输层共振模态所需厚度。
  14. 根据权利要求1所述的制作方法，其中，所述底电极和所述顶点极中 的一个是透明的或半透明的，另一个是不透明且反射光的。
  15. 一种利用权利要求1所述的制作方法制作的有机发光器件。
PCT/CN2016/112161 2016-12-21 2016-12-26 有机发光器件及其制作方法 Ceased WO2018112992A1 (zh)

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