WO2018112919A1 - 一种多孔基板及其制作方法、薄膜晶体管的制作方法 - Google Patents

一种多孔基板及其制作方法、薄膜晶体管的制作方法 Download PDF

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WO2018112919A1
WO2018112919A1 PCT/CN2016/111801 CN2016111801W WO2018112919A1 WO 2018112919 A1 WO2018112919 A1 WO 2018112919A1 CN 2016111801 W CN2016111801 W CN 2016111801W WO 2018112919 A1 WO2018112919 A1 WO 2018112919A1
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porous substrate
manufacturing
substrate
thin film
film transistor
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French (fr)
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唐凡
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present invention relates to the field of semiconductor technology, and in particular to a porous substrate, a method of fabricating the same, and a method of fabricating a thin film transistor using the porous substrate.
  • the preparation method of the flexible OLED device usually adopts a glass substrate as a carrier, and undergoes the following main steps: (1) coating a special glue material on the surface of the glass substrate or depositing a layer of inorganic material as a sacrificial layer; (2) Coating a polymer monomer, a polymer or a mixed solution of a monomer and a prepolymer on the sacrificial layer, and polymerizing the monomer into a flexible film layer by a process such as baking; (3) depositing a water and oxygen barrier on the surface of the flexible film layer (4) performing Array process, evaporation and packaging process to complete the preparation of the flexible OLED device; (5) by the laser or baking method after the preparation, the sacrificial layer is decomposed or softened, and then the flexibility is made with a small external force.
  • the OLED device is separated from the glass substrate.
  • the material of the flexible film layer is mainly a polymer, which has a large difference in thermal expansion coefficient from the metal electrode located on the surface thereof, and is susceptible to the risk of peeling off the metal electrode and the flexible film layer;
  • the laser may pass through the glass substrate and affect the organic luminescent material on the glass substrate, such as decomposition, crystallization, etc., especially for the bottom emission device;
  • the high price of the laser device, for mass production The line needs a lot of investment.
  • a carrier substrate made of a waterproof and permeable material can be used to overcome the problem of the above-mentioned air bubbles, in this technical solution, it is necessary to prepare a flexible film layer in advance, and then use a sticky layer.
  • the mixture is applied to the surface of the carrier substrate; since there are many micropores for releasing bubbles on the carrier substrate, the flexible film layer cannot be directly coated on the carrier substrate, and only the flexible substrate and the carrier substrate can be bonded and bonded.
  • the process not only increases the complexity of the process, but also the flatness of the flexible film layer is also greatly challenged; and, because the flexible film layer in the Array process can withstand high temperatures of up to 450 ° C, and due to the light transmission of the carrier substrate and The scattering problem of the laser makes the carrier substrate unsuitable for laser stripping, and can only be heated or mechanically stripped, which also causes the problem of residual glue cleaning. Therefore, the technical solution has high requirements on the carrier substrate and the adhesive. .
  • the present invention provides a method for fabricating a thin film transistor, which is effective for filling a flexible OLED and a porous substrate in a thin film transistor manufacturing process by filling a hole in a porous substrate with a filling material. Separation.
  • a method for fabricating a thin film transistor comprising the steps of: S1, filling a filling material into a hole of a porous substrate to obtain a carrier substrate; S2, preparing a flexible film layer on the carrier substrate; S3, removing the filling material; S4 Preparing an organic light emitting diode on the flexible film layer; S5, removing the porous substrate to obtain a thin film transistor.
  • step S1 the end of the filling material is flush with the surface of the porous substrate.
  • the porous substrate is removed by a solvent isolation method in combination with an air pressing method.
  • the filling material is removed by a dissolution method.
  • the filler material is a polymer, an inorganic material, a metal material, or a mixture of a polymer and an inorganic material.
  • the filling material is stably present; in the step S3, the flexible film layer is stably present.
  • Another object of the present invention is to provide a porous substrate comprising a substrate body and a plurality of holes formed in the substrate body; wherein the material of the substrate body is selected from any of inorganic materials, metal materials, and polymer materials.
  • the porous substrate has a porosity of 1% to 70%.
  • the hole has a diameter of 1 nm to 1 mm.
  • Another object of the present invention is to provide a method for fabricating a porous substrate according to any of the above, comprising the steps of: Q1, mixing the substrate body material and the hole material uniformly and press-forming to obtain a sintered body; The sintered body is sintered, and the hole material is decomposed to obtain the porous substrate; wherein the decomposition temperature of the hole material does not exceed the sintering temperature of the substrate body material.
  • a method of fabricating a thin film transistor according to the present invention based on a porous substrate having a microporous structure, bubbles generated during OLED preparation can be released due to the presence of micropores, and the influence of bubbles on illumination in the Array process is avoided. And damage to the vapor deposited metal mask;
  • the method for fabricating a thin film transistor according to the present invention eliminates the step of removing the sacrificial layer by laser irradiation compared to the fabrication method of the prior art, thereby avoiding damage of the flexible film material by laser irradiation;
  • the method for fabricating the thin film transistor according to the present invention further eliminates the step of heating and separating the glass substrate from the flexible OLED device in the conventional manufacturing method, thereby avoiding thermal damage to the device by heating;
  • FIG. 1 is a flow chart showing the steps of a method of fabricating a thin film transistor according to an embodiment of the present invention
  • FIG. 2 is a schematic structural view of a carrier substrate according to an embodiment of the present invention.
  • FIG. 3 is a schematic structural view of a porous substrate according to an embodiment of the present invention.
  • 4-8 are process flow diagrams of a method of fabricating a thin film transistor in accordance with an embodiment of the present invention.
  • FIG. 1 is a flow chart showing the steps of a method of fabricating a thin film transistor in accordance with an embodiment of the present invention.
  • a method of fabricating a thin film transistor according to this embodiment includes the following steps:
  • filling material 2 is filled into the hole 12 of the porous substrate 1 to obtain a carrier substrate; as shown in FIG.
  • the present embodiment provides a porous substrate 1 as shown in FIG. It includes a substrate body 11 and a plurality of holes 12 formed on the substrate body 11; wherein the substrate body 11 is made of an inorganic material, a metal material, or a polymer material.
  • the porosity of the porous substrate 1 is 1% to 70%, and the diameter of the holes 12 is 1 nm to 1 mm.
  • the porous substrate 1 used in the present embodiment is obtained by the following method: (1) uniformly mixing and compressing the substrate body material and the hole material to obtain a sintered body; (2) sintering the sintered body, the hole material Decomposed to obtain the porous substrate 1.
  • the substrate body material is preferably a boron nitride ceramic material.
  • the decomposition temperature of the material of the hole should not exceed the sintering temperature of the material of the substrate body.
  • the substrate body material can be sintered to obtain the substrate body 11 and uniformly dispersed in the substrate body material.
  • the hole material is decomposed at a high temperature to form a plurality of holes 12 inside the substrate body 11.
  • the filler material 2 may be a polymer, an inorganic material, a metal material, or a mixture of a polymer and an inorganic material.
  • the carrier substrate is formed for the convenience of the subsequent fabrication of the flexible film layer and the organic light emitting diode, and the problem of flatness of the flexible film layer is prevented. Therefore, the end surface of the filling material 2 filled in the hole 12 is preferably the substrate body. The surface of 11 is flush.
  • a flexible film layer precursor may be first coated on the carrier substrate, and then the flexible film layer precursor is heated and cured, and the flexible film layer 31 is obtained on the carrier substrate.
  • the filling material 2 is stably present; that is, the flexible film layer precursor and the flexible film layer 31 neither dissolve the filling material 2 nor chemically with the filling material 2. reaction.
  • the filling material 2 is preferably removed by a dissolution method. Specifically, the carrier substrate having the flexible film layer 31 is immersed in the first solvent, the filling material 2 is dissolved and removed by the first solvent, and the holes 12 in the porous substrate 1 are exposed; meanwhile, the flexible film layer 31 is also only bonded to the substrate.
  • the body 11 is in contact with the connection, and the purpose of the partial contact connection with the porous substrate 1 is achieved, and the combination between the two is not very tight, and the subsequent separation is easy.
  • the first solvent is not particularly limited as long as it can dissolve the corresponding filler material 2 while keeping the flexible film layer 31 stable.
  • the organic light emitting diode 32 is formed on the flexible film layer 31 by using the Array process and the OLED process in the prior art. The specific steps are not described herein again, and those skilled in the art can refer to the prior art.
  • the high temperature treatment causes the gas mixed in the process of manufacturing the flexible film layer 31 and the molecules of the insufficiently reacted impurities to migrate out, and a large bubble is formed on the surface of the porous substrate 1.
  • the baking effluent process performed before the OLED process also exacerbates the further increase of these bubbles.
  • the bubbles can be released through the holes 12 in the porous substrate 1, thereby eliminating the adverse effects on the laser irradiation and the vapor-deposited metal mask in the OLED process.
  • the porous substrate 1 is removed to obtain a thin film transistor 3; as shown in FIGS. 7 and 8.
  • the porous substrate 1 is removed by a solvent isolation method in combination with an air pressing method. Specifically, first, a second solvent is injected into the hole 12 of the porous substrate 1 in the direction of the arrow in FIG. 7, and the second solvent is sufficiently diffused through the hole 12 to the contact surface of the flexible film layer 31 and the porous substrate 1. Then, compressed air is blown into the hole 12 in the direction of the arrow in Fig. 7, so that the flexible film layer 31 is detached from the porous substrate 1 in the direction indicated by the arrow in Fig. 8 by the external force of air, and the thin film transistor 3 is obtained.
  • the second solvent is also not particularly limited, and may be any conventional reagent such as ethanol or isopropyl alcohol, and it is only required to be dissolved or reacted with the material of the porous substrate 1 and the material of the flexible film layer 31.
  • the surface of the thin film transistor 3 obtained has no foreign impurity particles and does not need to be cleaned; at the same time, the porous substrate 1 is not damaged, can be reused, reduces pollution and waste, and reduces the manufacturing cost.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)

Abstract

一种薄膜晶体管的制作方法，包括步骤：S1、将填充材料（2）填充至多孔基板（1）的孔洞（12）中，获得承载基板；S2、在承载基板上制备柔性膜层（31）；S3、去除填充材料（2）；S4、在柔性膜层（31）上制备有机发光二极管（32）；S5、去除多孔基板（1），获得薄膜晶体管（3）。根据上述薄膜晶体管（3）的制作方法，基于一种具有微孔结构的多孔基板（1），由于微孔的存在，在OLED制备过程中产生的气泡可以得到释放，避免气泡对Array制程中光照影响和蒸镀金属掩膜版的损坏；同时免除了激光照射去除牺牲层的步骤以及传统制作方法中的加热步骤。还涉及上述制作方法所使用的多孔基板及其制作方法，该多孔基板在使用后并无损伤，可以重复利用，减少污染与浪费，降低薄膜晶体管的制作成本。

Description

一种多孔基板及其制作方法、薄膜晶体管的制作方法 技术领域
本发明属于半导体技术领域，具体地讲，涉及一种多孔基板及其制作方法、以及利用该多孔基板制作薄膜晶体管的方法。
背景技术
现阶段柔性OLED器件的制备方法通常以玻璃基板为载体，经过下述主要步骤：(1)在玻璃基板表面涂布一层特殊胶材、或沉积一层无机物作为牺牲层；(2)在牺牲层上涂布聚合物单体、聚合物或者单体和预聚物的混合溶液，并通过烘烤等工艺使得单体聚合成柔性膜层；(3)在柔性膜层表面沉积水氧阻挡层；(4)进行Array制程、蒸镀和封装工艺完成柔性OLED器件的制备；(5)制备完成后通过激光或者烘烤的方法，使得牺牲层分解或软化，再以较小的外力使得柔性OLED器件和玻璃基板分离。
但是，上述现有工艺存在诸多缺陷：(a)在柔性膜层制备过程中，柔性膜层与玻璃基板间易混入气体，在后期Array制程和蒸镀前烘烤过程中会产生气泡，气泡的产生会导致Array制程中光照缺陷和蒸镀过程中对掩膜版的损伤；(b)柔性OLED器件受到激光照射，在柔性OLED器件表面会产生大量的热，会对柔性OLED器件产生热损伤的风险；(c)柔性膜层的材料主要为高分子，其与位于其表面的金属电极之间具有较大差别的热膨胀系数，易存在金属电极与柔性膜层剥离的风险；(d)在进行激光照射时，激光可能会穿过玻璃基板并对玻璃基板上的有机发光材料产生影响，如分解、结晶等，尤其对底发射器件影响更为明显；(e)激光设备价格高，对于量产线需要大笔投入。
虽然目前可采用以防水透气材料制成的承载基板来克服上述气泡的问题，但在该技术方案中，需要预先制备好柔性膜层，再采用粘 合剂贴合于承载基板的表面；鉴于承载基板上有很多用于释放气泡的微孔，因此柔性膜层不能直接在承载基板上涂布成型，只能采取柔性基板与承载基板进行粘合贴合工艺，不仅增加了工艺的复杂性，同时柔性膜层的平整性也受到了巨大的挑战；并且，因Array制程中柔性膜层会承受高达450℃的高温，而且由于承载基板的透光性和对激光的散射问题，使得这种承载基板不适合激光剥离方式，只能采用加热或机械剥离方式，又会引起残胶清理的难题，因此该技术方案对承载基板和粘合剂的要求很高。
因此，在柔性OLED器件与载体基板剥离的过程中，急需采取一种对柔性OLED器件影响较小的方法，以提高产品良率。
发明内容
为解决上述现有技术存在的问题，本发明提供了一种薄膜晶体管的制作方法，该制作方法通过在多孔基板的孔洞中填充填充材料，实现了薄膜晶体管制作过程中柔性OLED与多孔基板的有效分离。
为了达到上述发明目的，本发明采用了如下的技术方案：
一种薄膜晶体管的制作方法，包括步骤：S1、将填充材料填充至多孔基板的孔洞中，获得承载基板；S2、在所述承载基板上制备柔性膜层；S3、去除所述填充材料；S4、在所述柔性膜层上制备有机发光二极管；S5、去除所述多孔基板，获得薄膜晶体管。
进一步地，在所述步骤S1中，所述填充材料的端部与所述多孔基板的表面相平齐。
进一步地，在所述步骤S5中，采用溶剂隔离法结合空气施压法去除所述多孔基板。
进一步地，在所述步骤S3中，采用溶解法去除所述填充材料。
进一步地，所述填充材料为聚合物、无机材料、金属材料、或聚合物与无机材料的混合物。
进一步地，在所述步骤S2中，所述填充材料稳定存在；在所述步骤S3中，所述柔性膜层稳定存在。
本发明的另一目的在于提供一种多孔基板，包括基板本体以及形成在所述基板本体上的若干孔洞；其中，所述基板本体的材料选自无机材料、金属材料、高分子材料中的任意一种。
进一步地，所述多孔基板的孔隙率为1％～70％。
进一步地，所述孔洞的直径为1nm～1mm。
本发明的另一目的还在于提供一种如上任一所述的多孔基板的制作方法，包括步骤：Q1、将基板本体材料与孔洞材料混合均匀并压合成型，获得烧结坯体；Q2、将所述烧结坯体进行烧结，所述孔洞材料分解，获得所述多孔基板；其中，所述孔洞材料的分解温度不超过所述基板本体材料的烧结温度。
本发明的有益效果：
(1)根据本发明的薄膜晶体管的制作方法，基于一种具有微孔结构的多孔基板，由于微孔的存在，在OLED制备过程中产生的气泡可以得到释放，避免气泡对Array制程中光照影响和蒸镀金属掩膜版的损坏；
(2)根据本发明的薄膜晶体管的制作方法，相比现有技术中的制作方法，免除了激光照射去除牺牲层的步骤，因此可以避免激光照射对柔性膜层材料的损伤；
(3)根据本发明的薄膜晶体管的制作方法，还免除了传统制作方法中的加热分离玻璃基板与柔性OLED器件的步骤，因此可以避免加热对器件的热损伤；
(4)根据本发明的薄膜晶体管的制作方法，其所利用的多孔基板在与柔性OLED器件分离后，所获得的薄膜晶体管的表面无外来杂质颗粒，无需清洗；同时，多孔基板并无损伤，可以重复利用，减少污染与浪费，降低制作成本。
附图说明
通过结合附图进行的以下描述，本发明的实施例的上述和其它方面、特点和优点将变得更加清楚，附图中：
图1是根据本发明的实施例的薄膜晶体管的制作方法的步骤流程图；
图2是根据本发明的实施例的承载基板的结构示意图；
图3是根据本发明的实施例的多孔基板的结构示意图；
图4-图8是根据本发明的实施例的薄膜晶体管的制作方法的工艺流程图。
具体实施方式
以下，将参照附图来详细描述本发明的实施例。然而，可以以许多不同的形式来实施本发明，并且本发明不应该被解释为限制于这里阐述的具体实施例。相反，提供这些实施例是为了解释本发明的原理及其实际应用，从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。在附图中，为了清楚起见，可以夸大元件的形状和尺寸，并且相同的标号将始终被用于表示相同或相似的元件。
将理解的是，尽管在这里可使用术语“第一”、“第二”等来描述各种物质，但是这些物质应受这些术语的限制。这些术语仅用于将一个物质与另一个物质区分开来。
图1是根据本发明的实施例的薄膜晶体管的制作方法的步骤流程图。
参照图1，根据本实施例的薄膜晶体管的制作方法包括下述步骤：
S1、将填充材料2填充至多孔基板1的孔洞12中，获得承载基板；如图2所示。
具体来讲，本实施例提供了一种多孔基板1，如图3所示。其包括基板本体11以及形成在基板本体11上的若干孔洞12；其中，基板本体11由无机材料、金属材料、或高分子材料制成。
更为具体地，该多孔基板1的孔隙率为1％～70％，且这些孔洞12的直径为1nm～1mm。
本实施例所使用的多孔基板1采用下述方法制作获得：(1)将基板本体材料与孔洞材料混合均匀并压合成型，获得烧结坯体；(2)将烧结坯体进行烧结，孔洞材料分解，获得多孔基板1。
在本实施例中，基板本体材料优选为氮化硼陶瓷材料。
值得注意的是，孔洞材料的分解温度应不超过基板本体材料的烧结温度，如此，当烧结该烧结坯体时，基板本体材料即可经烧结获得基板本体11，而均匀分散在基板本体材料中的孔洞材料即在高温下分解，形成了基板本体11内部的若干孔洞12。
填充材料2可以是聚合物、无机材料、金属材料、或聚合物与无机材料的混合物。
在本实施例中，承载基板的制作是为了方便后续柔性膜层以及有机发光二极管的制作，防止出现柔性膜层的平整性问题，因此填充在孔洞12中的填充材料2的端面优选与基板本体11的表面相平齐。
S2、在承载基板上制备柔性膜层31；如图4所示。
具体来讲，可首先在承载基板上涂覆一层柔性膜层前驱体，然后加热固化这层柔性膜层前驱体，在承载基板上获得柔性膜层31。
值得注意的是，在制备柔性膜层31的过程中，填充材料2稳定存在；也就是说，柔性膜层前驱体及柔性膜层31既不能溶解填充材料2，也不与填充材料2发生化学反应。
S3、去除填充材料2；如图5所示。
在本实施例中，优选采用溶解法去除填充材料2。具体来讲，将具有柔性膜层31的承载基板浸泡至第一溶剂中，填充材料2被第一溶剂溶解去除，多孔基板1中的孔洞12得以显露；同时，柔性膜层31也仅与基板本体11接触连接，达到了与多孔基板1部分接触连接的目的，二者之间的结合并不十分紧密，易于后续的分离。
值得说明的是，第一溶剂并无具体限制，只需能够溶解对应的填充材料2、同时保持柔性膜层31稳定存在即可。
S4、在柔性膜层31上制备有机发光二极管32；如图6所示。
采用现有技术中的Array制程及OLED工艺在柔性膜层31上制作有机发光二极管32，此处具体步骤不再赘述，本领域技术人员参照现有技术即可。
值得说明的是，在有机发光二极管32的制作过程中，高温处理会使柔性膜层31制作过程中混入的气体及未充分反应的杂质分子迁移出来，并在多孔基板1的表面形成较大气泡；同时，在OLED工艺之前所进行的烘烤出水过程也会加剧这些气泡进一步增大。此时，这些气泡即可通过多孔基板1上的孔洞12进行释放，从而免除其对激光照射及OLED工艺中蒸镀金属掩膜版产生的不良影响。
S5、去除多孔基板1，获得薄膜晶体管3；如图7和图8所示。
具体地，采用溶剂隔离法结合空气施压法去除多孔基板1。具体来讲，首先按照照图7中的箭头方向，向多孔基板1的孔洞12内注入第二溶剂，并使得这些第二溶剂通过孔洞12向柔性膜层31与多孔基板1的接触面充分扩散；然后按照图7中的箭头方向，向孔洞12中吹入压缩空气，使得柔性膜层31在空气外力的作用下按照图8中箭头所示的方向脱离多孔基板1，获得薄膜晶体管3。
值得说明的是，第二溶剂也并无特定限制，如乙醇、异丙醇等常规试剂均可，只需保证不与多孔基板1的材料以及柔性膜层31的材料发生溶解或反应即可。
经上述分离过程，所获得的薄膜晶体管3的表面无外来杂质颗粒，无需清洗；同时，多孔基板1并无损伤，可以重复利用，减少污染与浪费，降低制作成本。
虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。

Claims (18)

  1. 一种薄膜晶体管的制作方法，其特征在于，包括步骤：
    S1、将填充材料填充至多孔基板的孔洞中，获得承载基板；
    S2、在所述承载基板上制备柔性膜层；
    S3、去除所述填充材料；
    S4、在所述柔性膜层上制备有机发光二极管；
    S5、去除所述多孔基板，获得薄膜晶体管。
  2. 根据权利要求1所述的制作方法，其特征在于，在所述步骤S1中，所述填充材料的端部与所述多孔基板的表面相平齐。
  3. 根据权利要求1所述的制作方法，其特征在于，在所述步骤S5中，采用溶剂隔离法结合空气施压法去除所述多孔基板。
  4. 根据权利要求2所述的制作方法，其特征在于，在所述步骤S5中，采用溶剂隔离法结合空气施压法去除所述多孔基板。
  5. 根据权利要求1所述的制作方法，其特征在于，在所述步骤S3中，采用溶解法去除所述填充材料。
  6. 根据权利要求5所述的制作方法，所述填充材料为聚合物、无机材料、金属材料、或聚合物与无机材料的混合物。
  7. 根据权利要求2所述的制作方法，其特征在于，在所述步骤S3中，采用溶解法去除所述填充材料。
  8. 根据权利要求7所述的制作方法，所述填充材料为聚合物、无机材料、金属材料、或聚合物与无机材料的混合物。
  9. 根据权利要求1所述的制作方法，其特征在于，在所述步骤S2中，所述填充材料稳定存在；在所述步骤S3中，所述柔性膜层稳定存在。
  10. 根据权利要求2所述的制作方法，其特征在于，在所述步骤S2中，所述填充材料稳定存在；在所述步骤S3中，所述柔性膜层稳 定存在。
  11. 一种多孔基板，其特征在于，包括基板本体以及形成在所述基板本体上的若干孔洞；其中，所述基板本体的材料选自无机材料、金属材料、高分子材料中的任意一种。
  12. 根据权利要求11所述的多孔基板，其特征在于，所述多孔基板的孔隙率为1％～70％。
  13. 根据权利要求11所述的多孔基板，其特征在于，所述孔洞的直径为1nm～1mm。
  14. 根据权利要求12所述的多孔基板，其特征在于，所述孔洞的直径为1nm～1mm。
  15. 一种如权利要求11所述的多孔基板的制作方法，其特征在于，包括步骤：
    Q1、将基板本体材料与孔洞材料混合均匀并压合成型，获得烧结坯体；
    Q2、将所述烧结坯体进行烧结，所述孔洞材料分解，获得所述多孔基板；
    其中，所述孔洞材料的分解温度不超过所述基板本体材料的烧结温度。
  16. 根据权利要求15所述的多孔基板的制作方法，其特征在于，所述多孔基板的孔隙率为1％～70％。
  17. 根据权利要求15所述的多孔基板的制作方法，其特征在于，所述多孔基板的孔洞的直径为1nm～1mm。
  18. 根据权利要求16所述的多孔基板的制作方法，其特征在于，所述多孔基板的孔洞的直径为1nm～1mm。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11239397B2 (en) * 2019-12-11 2022-02-01 Mikro Mesa Technology Co., Ltd. Breathable and waterproof micro light emitting diode display
US12027649B2 (en) 2019-12-11 2024-07-02 Mikro Mesa Technology Co., Ltd. Breathable micro light emitting diode display

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107742618B (zh) * 2017-10-24 2020-07-03 京东方科技集团股份有限公司 柔性面板的制备方法、柔性面板及显示装置
CN110299466B (zh) * 2019-06-17 2022-06-14 纳晶科技股份有限公司 一种基板及剥离方法
CN110491993B (zh) * 2019-07-24 2022-06-10 武汉华星光电半导体显示技术有限公司 一种pi基板的制备方法及其显示装置
CN112631070A (zh) * 2020-12-23 2021-04-09 江苏高光半导体材料有限公司 一种去除掩膜版上的孔边毛刺的方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6492195B2 (en) * 1999-12-24 2002-12-10 Hitachi, Ltd. Method of thinning a semiconductor substrate using a perforated support substrate
CN102956668A (zh) * 2011-08-23 2013-03-06 元太科技工业股份有限公司 用于制作软性显示设备的基板、结构及其制作方法
CN103682176A (zh) * 2013-12-06 2014-03-26 京东方科技集团股份有限公司 刚性衬底基板及柔性显示器件的制作方法、刚性衬底基板
CN104319263A (zh) * 2014-11-14 2015-01-28 昆山工研院新型平板显示技术中心有限公司 柔性显示装置的制备方法及用于制作柔性显示装置的基板
CN105428312A (zh) * 2015-11-18 2016-03-23 上海大学 柔性衬底的制备和分离方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6649492B2 (en) * 2002-02-11 2003-11-18 International Business Machines Corporation Strained Si based layer made by UHV-CVD, and devices therein
KR101475509B1 (ko) * 2008-02-26 2014-12-24 서울바이오시스 주식회사 발광 소자 및 그 제조 방법
US8119234B2 (en) * 2008-02-29 2012-02-21 Corning Incorporated Anisotropic porous ceramic article and manufacture thereof
CN102385207B (zh) * 2011-11-01 2014-04-02 深圳市华星光电技术有限公司 薄膜晶体管阵列基板及其制造方法
CN102931355B (zh) * 2012-11-09 2015-12-09 四川虹视显示技术有限公司 Oled器件

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6492195B2 (en) * 1999-12-24 2002-12-10 Hitachi, Ltd. Method of thinning a semiconductor substrate using a perforated support substrate
CN102956668A (zh) * 2011-08-23 2013-03-06 元太科技工业股份有限公司 用于制作软性显示设备的基板、结构及其制作方法
CN103682176A (zh) * 2013-12-06 2014-03-26 京东方科技集团股份有限公司 刚性衬底基板及柔性显示器件的制作方法、刚性衬底基板
CN104319263A (zh) * 2014-11-14 2015-01-28 昆山工研院新型平板显示技术中心有限公司 柔性显示装置的制备方法及用于制作柔性显示装置的基板
CN105428312A (zh) * 2015-11-18 2016-03-23 上海大学 柔性衬底的制备和分离方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11239397B2 (en) * 2019-12-11 2022-02-01 Mikro Mesa Technology Co., Ltd. Breathable and waterproof micro light emitting diode display
US12027649B2 (en) 2019-12-11 2024-07-02 Mikro Mesa Technology Co., Ltd. Breathable micro light emitting diode display

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