WO2018110057A1 - 弾性波装置、高周波フロントエンド回路及び通信装置 - Google Patents
弾性波装置、高周波フロントエンド回路及び通信装置 Download PDFInfo
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- WO2018110057A1 WO2018110057A1 PCT/JP2017/036861 JP2017036861W WO2018110057A1 WO 2018110057 A1 WO2018110057 A1 WO 2018110057A1 JP 2017036861 W JP2017036861 W JP 2017036861W WO 2018110057 A1 WO2018110057 A1 WO 2018110057A1
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- Prior art keywords
- support member
- wave device
- piezoelectric substrate
- elastic wave
- piezoelectric
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Definitions
- the present invention relates to an elastic wave device, a high-frequency front end circuit, and a communication device.
- Patent Document 1 discloses an example of an acoustic wave device.
- the acoustic wave device includes a piezoelectric substrate, a support member provided on the piezoelectric substrate, and a cover member provided on the support member.
- An IDT electrode is provided on the piezoelectric substrate, and the IDT electrode is formed in a hollow space surrounded by the piezoelectric substrate, the support member, and the cover member.
- the elastic wave device of Patent Document 1 is an elastic wave device having a WLP (Wafer Level Package) structure.
- WLP Wafer Level Package
- Heat is applied to the acoustic wave device in the manufacturing process and the mounting process. Even when an elastic wave device is used, the elastic wave device may become hot due to heat generated by the IDT electrode or heat applied from outside the elastic wave device.
- the support member since the support member has a larger thermal expansion coefficient than the piezoelectric substrate, the support member tends to be deformed more than the piezoelectric substrate due to temperature change. Therefore, a large thermal stress is applied to the piezoelectric substrate, and the piezoelectric substrate may be damaged.
- An object of the present invention is to provide an acoustic wave device, a high-frequency front end circuit, and a communication device that can disperse stress applied to a piezoelectric material such as a piezoelectric substrate and are less likely to cause damage to the piezoelectric material.
- An elastic wave device includes a piezoelectric body, a functional electrode provided on the piezoelectric body, a support member provided on the piezoelectric body so as to surround the functional electrode, and the support member A hollow space surrounded by the piezoelectric body, the support member, and the cover member, wherein the support member has a thermal expansion coefficient larger than that of the piezoelectric body.
- the support member has an inner surface that is a surface on the hollow space side and an outer surface that is a surface opposite to the inner surface, and at least one of the inner surface and the outer surface Has a recess provided on the surface.
- the depth in the concave portion is the deepest. This portion is closer to the piezoelectric body than the cover member. In this case, since the piezoelectric body side is difficult to be deformed and stress is easily concentrated, the stress applied to the piezoelectric body can be further dispersed.
- the support member in a plan view, has a plurality of corner portions, and the concave portion is provided in at least one corner portion of the plurality of corner portions. ing. In this case, since stress tends to concentrate particularly at the corners, the stress applied to the piezoelectric body can be effectively dispersed.
- the recess is provided on the outer surface of the support member.
- the stress applied to the outer surface is more concentrated than the inner surface, so that the stress applied to the piezoelectric body can be effectively dispersed.
- the support member has a frame shape in plan view, and the recess is provided on the entire circumference of the support member.
- the stress is absorbed in a wide range and uniformly, so that the stress applied to the piezoelectric body can be further dispersed.
- the functional electrode is an IDT electrode.
- the high-frequency front-end circuit according to the present invention includes an elastic wave device configured according to the present invention and a power amplifier.
- the communication device of the present invention includes a high-frequency front-end circuit configured according to the present invention and an RF signal processing circuit.
- an elastic wave device a high-frequency front-end circuit, and a communication device that can disperse stress applied to a piezoelectric material such as a piezoelectric substrate and are less likely to break the piezoelectric material.
- FIG. 1 is a front sectional view of an acoustic wave device according to a first embodiment of the present invention.
- FIG. 2 is an enlarged front cross-sectional view of the vicinity of the support member in the first embodiment of the present invention.
- FIG. 3 is a plan view of the acoustic wave device according to the first embodiment of the present invention.
- FIG. 4 is a schematic plan view schematically showing thermal stress applied from the support member to the piezoelectric substrate in the acoustic wave device having the WLP structure.
- FIG. 5 is an enlarged front cross-sectional view showing thermal stress distribution in the piezoelectric substrate, the support member, and the cover member in the first comparative example.
- FIG. 1 is a front sectional view of an acoustic wave device according to a first embodiment of the present invention.
- FIG. 2 is an enlarged front cross-sectional view of the vicinity of the support member in the first embodiment of the present invention.
- FIG. 3 is a plan view of the acous
- FIG. 6 is an enlarged front cross-sectional view showing thermal stress distribution in the piezoelectric substrate, the support member, and the cover member in the second comparative example.
- FIG. 7 is an enlarged front cross-sectional view showing thermal stress distributions in the piezoelectric substrate, the support member, and the cover member in the third comparative example.
- FIG. 8 is an enlarged front cross-sectional view showing the distribution of thermal stress in the piezoelectric substrate, the support member, and the cover member in the first embodiment of the present invention.
- FIG. 9 is an enlarged front cross-sectional view showing the distribution of thermal stress in the piezoelectric substrate, the support member, and the cover member in the first modification of the first embodiment of the present invention.
- FIG. 10 is an enlarged front cross-sectional view showing the distribution of thermal stress in the piezoelectric substrate, the support member, and the cover member in the second modification of the first embodiment of the present invention.
- FIG. 11 is an enlarged front cross-sectional view of the vicinity of the support member in the third modification of the first embodiment of the present invention.
- FIG. 12 is a front sectional view of an acoustic wave device according to a fourth modification of the first embodiment of the present invention.
- 13 (a) to 13 (c) are front sectional views for explaining an example of the method for manufacturing the acoustic wave device according to the first embodiment of the present invention.
- FIG. 14 (a) to 14 (c) are front cross-sectional views for explaining an example of the method for manufacturing the acoustic wave device according to the first embodiment of the present invention.
- FIG. 15 is a plan view of an acoustic wave device according to the second embodiment of the present invention.
- FIG. 16 is a configuration diagram of a communication apparatus having a high-frequency front end circuit.
- FIG. 1 is a front sectional view of an acoustic wave device according to a first embodiment of the present invention.
- FIG. 2 is an enlarged front cross-sectional view of the vicinity of the support member in the first embodiment.
- the elastic wave device 1 has a piezoelectric substrate 2 as a piezoelectric body.
- the piezoelectric substrate 2 is made of a piezoelectric single crystal such as LiNbO 3 or LiTaO 3 .
- the piezoelectric substrate 2 may be made of an appropriate piezoelectric ceramic.
- an IDT electrode 3 as a functional electrode is provided on the piezoelectric substrate 2.
- the functional electrode may be a functional electrode other than the IDT electrode.
- an electrode pad 7 electrically connected to the IDT electrode 3 is also provided.
- the IDT electrode 3 has an electrode layer made of, for example, Ti, Al, Cu, Pt, W, Mo, NiCr, Au, or the like.
- the IDT electrode 3 may be composed of a laminated metal film in which a plurality of electrode layers are laminated, or may be composed of a single electrode layer.
- the electrode pad 7 is made of the same material as that of the IDT electrode 3.
- a dielectric film 10 is provided on the piezoelectric substrate 2 so as to cover the IDT electrode 3.
- the dielectric film 10 is made of, for example, SiO 2 or SiN. By having the dielectric film 10, the IDT electrode 3 is hardly damaged. Further, when the dielectric film 10 is made of SiN, the frequency can be easily adjusted. The dielectric film 10 may not be provided.
- a support member 4 having an opening 4a is provided on the piezoelectric substrate 2.
- the support member 4 is provided so as to surround the IDT electrode 3 by the opening 4a.
- the support member 4 is made of an appropriate resin or the like.
- the support member 4 has a thermal expansion coefficient larger than that of the piezoelectric substrate 2.
- a cover member 6 is provided on the support member 4 so as to cover the opening 4a.
- the cover member 6 includes an adhesive layer 6a and a protective layer 6b laminated on the adhesive layer 6a.
- the adhesive layer 6a is made of an acrylic ester resin.
- the protective layer 6b is made of PI. Thereby, the joining force of the supporting member 4 and the cover member 6 can be raised suitably, and durability of an elastic wave apparatus can also be improved.
- the material of the cover member 6 is not limited to the above.
- the cover member 6 may be a single layer.
- the acoustic wave device 1 has a hollow space A surrounded by the piezoelectric substrate 2, the support member 4 and the cover member 6.
- the IDT electrode 3 is located in the hollow space A.
- the support member 4 has an inner surface 4b that is a surface on the hollow space A side and an outer surface 4c that is a surface opposite to the inner surface 4b.
- the outer surface 4c of the support member 4 extends while being inclined with respect to the height direction.
- the outer surface 4c of the support member 4 may extend in parallel to the height direction.
- the recess 5 is provided on the outer surface 4c. More specifically, as shown in FIG. 2, the recess 5 is provided from between the cover member 6 and the piezoelectric substrate 2 on the outer surface 4 c to a portion in contact with the piezoelectric substrate 2.
- the depth the length along the direction connecting the inner surface 4b and the outer surface 4c is defined as the depth.
- the recessed part 5 has the bottom part 5a which is a part where the depth becomes the deepest. The position of the bottom 5a is closer to the piezoelectric substrate 2 than the cover member 6 in the height direction. In the recess 5, the depth gradually decreases from the bottom 5 a to the portion in contact with the piezoelectric substrate 2.
- the recessed part 5 has the inclined surface 5b located between the bottom part 5a and the part which contact
- the shape of the recessed part 5 is not limited above.
- the support member 4 has a rectangular frame shape in plan view.
- the support member 4 has four sides 4d and four corners 4e.
- Concave portions 5 are provided in the vicinity of the central portion of the four sides 4d of the outer surface 4c and in the four corner portions 4e, respectively.
- the position where the recessed part 5 is provided in the supporting member 4 is not limited to the above.
- the recessed part 5 should just be provided in at least one among the inner surface 4b and the outer surface 4c.
- the elastic wave device 1 of this embodiment is an elastic wave device having a WLP structure.
- the feature of this embodiment is that the support member 4 has a recess 5 provided in the outer surface 4c. Thereby, the thermal stress can be dispersed and the piezoelectric substrate 2 is hardly damaged. This will be described below by comparing this embodiment with the first to third comparative examples.
- the first to third comparative examples are different from the first embodiment in that they do not have a recess.
- the outer surface of the support member in the first comparative example extends parallel to the height direction.
- the entire outer surface of the support member in the second comparative example extends while being inclined with respect to the height direction.
- the outer surface of the support member extends in the vicinity of the portion in contact with the piezoelectric substrate while being inclined with respect to the height direction, and the other portion extends in parallel with the height direction.
- the thermal stress distributions in the first embodiment and the first to third comparative examples were compared.
- FIG. 4 is a schematic plan view schematically showing thermal stress applied from the support member to the piezoelectric substrate in the elastic wave device having the WLP structure.
- FIG. 5 is an enlarged front cross-sectional view showing thermal stress distribution in the piezoelectric substrate, the support member, and the cover member in the first comparative example.
- FIG. 6 is an enlarged front cross-sectional view showing thermal stress distribution in the piezoelectric substrate, the support member, and the cover member in the second comparative example.
- FIG. 7 is an enlarged front cross-sectional view showing thermal stress distributions in the piezoelectric substrate, the support member, and the cover member in the third comparative example.
- FIG. 8 is an enlarged front cross-sectional view showing thermal stress distribution in the piezoelectric substrate, the support member, and the cover member in the first embodiment.
- the cover member, the via electrode, and the electrode pad are omitted.
- a large thermal stress is applied from the support member to the piezoelectric substrate due to a temperature cycle in which heat is applied to the acoustic wave device to increase the temperature, and further the heat is released from the acoustic wave device to decrease the temperature. More specifically, as indicated by an arrow A in FIG. 4, stress is applied from the outer surface 4 c side to the inner surface 4 b side of the support member 4. As shown in FIG. 5, in the first comparative example, it can be seen that stress concentration occurs at the portion where the support member and the piezoelectric substrate are in contact with each other. In the first comparative example, the maximum value of stress is 79.988 MPa.
- the support member has a recess provided on the outer surface.
- the stress is disperse
- the maximum value of stress is 50.33 MPa, which is 16 MPa or more smaller than those of the first to third comparative examples.
- the portion where the stress is maximum can be located near the bottom of the recess, and the piezoelectric substrate can be moved away from the portion where the stress is greatly applied. Therefore, the stress applied to the piezoelectric substrate can be effectively reduced. Therefore, the piezoelectric substrate can be effectively prevented from being damaged.
- FIG. 9 is an enlarged front cross-sectional view showing the distribution of thermal stress in the piezoelectric substrate, the support member, and the cover member in the first modification of the first embodiment of the present invention
- FIG. 10 is the first view of the present invention. It is an expanded front sectional view which shows distribution of the thermal stress in the piezoelectric substrate in the 2nd modification of embodiment of this embodiment, a supporting member, and a cover member.
- the recessed part is provided in the whole in the height direction of the outer surface of a supporting member.
- FIG. 9 in the 1st modification of 1st Embodiment, the recessed part is provided in the whole in the height direction of the outer surface of a supporting member.
- the outer surface of the support member extends in parallel to the height direction.
- the concave portion is provided on the outer surface from between the cover member and the piezoelectric substrate to the piezoelectric substrate. As shown in FIGS. 9 and 10, the stress can be dispersed also in the first and second modified examples. Therefore, the piezoelectric substrate is hardly damaged.
- the recess 5 preferably has an inclined surface 5 b over the piezoelectric substrate 2.
- the stress applied to the piezoelectric substrate 2 can be further dispersed.
- the bottom 5a of the recess 5 is preferably closer to the piezoelectric substrate 2 than the cover member 6 in the height direction.
- the support member 4 is not easily deformed on the piezoelectric substrate 2 side. Therefore, stress tends to concentrate on the piezoelectric substrate 2. Therefore, when the bottom 5a of the recess 5 is close to the piezoelectric substrate 2, the stress applied to the piezoelectric substrate 2 can be further dispersed.
- the recess 5 is preferably provided in at least one corner of the support member 4.
- stress is applied to the piezoelectric substrate 2 at the portion in contact with each side 4 d in the planar shape of the rectangular frame shape of the support member 4.
- the two sides 4d are in contact with each other, so that the stress applied to the piezoelectric substrate 2 is particularly easily concentrated. Therefore, as shown in FIG. 3, the stress applied to the piezoelectric substrate 2 can be effectively dispersed by providing the recess 5 in the corner 4e. More preferably, the recesses 5 are provided in all the corners 4 e of the support member 4. In this case, the stress applied to the piezoelectric substrate 2 can be further dispersed.
- the recess 5 is preferably provided on the outer surface 4 c of the support member 4. Thermal stress is applied to the piezoelectric substrate 2 from the support member 4 in a direction from the outer surface 4 c side to the inner surface 4 b side of the support member 4. Therefore, the stress applied to the piezoelectric substrate 2 is particularly large on the outer surface 4c side. Therefore, the stress applied to the piezoelectric substrate 2 can be effectively dispersed by providing the recess 5 on the outer surface 4c.
- the recess 5 may be provided on at least one of the inner surface 4b and the outer surface 4c of the support member 4. Even in this case, the stress applied to the portion of the inner surface 4b and the outer surface 4c where the concave portion 5 is in contact with the piezoelectric substrate 2 can be dispersed, and the piezoelectric substrate 2 is damaged. hard.
- FIG. 11 is an enlarged front cross-sectional view of the vicinity of the support member in the third modification of the first embodiment.
- the recess 5 is provided on the inner surface 4 b and the outer surface 4 c of the support member 4.
- the stress applied to the piezoelectric substrate 2 near the portion in contact with the inner surface 4b of the support member 4 and the portion in contact with the outer surface 4c can be effectively dispersed. Therefore, the piezoelectric substrate 2 is less likely to be damaged.
- the piezoelectric body is the piezoelectric substrate 2, but the piezoelectric body may be the piezoelectric thin film 22 as in the fourth modification of the first embodiment shown in FIG. 12.
- a low sound velocity film 23 may be provided on the surface of the piezoelectric thin film 22 opposite to the surface on which the IDT electrode 3 is provided.
- a high sound speed member 24 may be provided on the surface of the low sound speed film 23 opposite to the piezoelectric thin film 22 side.
- the low acoustic velocity film 23 is a membrane in which the acoustic velocity of the bulk wave propagating is lower than the acoustic velocity of the elastic wave propagating through the piezoelectric thin film 22.
- the low acoustic velocity film 23 is made of, for example, a material mainly composed of glass, silicon oxynitride, tantalum oxide, or a compound obtained by adding fluorine, carbon, or boron to silicon oxide.
- the material of the low sound velocity film 23 may be a material having a relatively low sound velocity.
- the high sound velocity member 24 is a member in which the sound velocity of the bulk wave propagating is higher than the sound velocity of the elastic wave propagating through the piezoelectric thin film 22.
- the high acoustic velocity member 24 is made of, for example, aluminum nitride, aluminum oxide, silicon carbide, silicon oxynitride, a DLC film, or a material mainly composed of diamond.
- the material of the high sound speed member 24 may be a material having a relatively high sound speed.
- the high sound speed member 24 may be a high sound speed film or a high sound speed substrate. As described above, when the low sound velocity film 23 and the high sound velocity member 24 are provided, the energy of the elastic wave can be effectively confined.
- FIG. 13A to FIG. 13C are front sectional views for explaining an example of the method for manufacturing the acoustic wave device according to the first embodiment.
- FIG. 14A to FIG. 14C are front sectional views for explaining an example of the method for manufacturing the acoustic wave device according to the first embodiment.
- the IDT electrode 3 is formed on the piezoelectric substrate 2.
- the IDT electrode 3 can be formed by, for example, a lift-off method or a sputtering method. In the case of using the sputtering method, a metal film for the IDT electrode 3 is formed by the sputtering method. Next, a resist pattern is formed on the metal film by photolithography. Next, the IDT electrode 3 can be formed by patterning the metal film along the resist pattern by a dry etching method. The electrode pad 7 is formed simultaneously with the IDT electrode 3.
- a dielectric film 10 is formed on the piezoelectric substrate 2 so as to cover the IDT electrode 3.
- the dielectric film 10 can be formed by, for example, a sputtering method.
- the dielectric film 10 can be appropriately patterned by a photolithography method and a dry etching method.
- a resin layer 34 for a support member is formed on the piezoelectric substrate 2 by a spin coating method so as to surround the IDT electrode 3.
- the resin layer 34 is formed so as to cover the electrode pad 7.
- the resin material used for the resin layer 34 is not particularly limited, but PI is preferably used as the resin material.
- the resin layer 34 is pre-baked. At this time, it is preferable to set the pre-baking temperature to a relatively high temperature. Thereby, the exposure sensitivity of the resin layer 34 can be reduced, and a recess is easily formed in the support member formed from the resin layer 34.
- the resin layer 34 is baked.
- the baking temperature is preferably about 220 ° C., for example. In heating in baking, it is preferable to increase the rate of temperature rise. Thereby, it is easy to form a recess in the support member.
- the recess 5 may be formed by cutting the support member 4 after the support member 4 is formed.
- a cover member 6 is provided on the support member 4.
- the protective layer 6 b may be laminated on the adhesive layer 6 a after the adhesive layer 6 a is provided on the support member 4.
- the cover member 6 may be formed by previously laminating the adhesive layer 6 a and the protective layer 6 b in advance, and then the cover member 6 may be provided on the support member 4.
- a through hole 38 is formed so as to penetrate the cover member 6 and the support member 4.
- a through hole 38 is formed so as to reach the electrode pad 7.
- the through hole 38 can be formed by, for example, laser light irradiation or physical cutting.
- the via electrode 8 is formed in the through hole 38 by electrolytic plating or the like.
- a via electrode 8 is formed so as to be connected to the electrode pad 7.
- bumps 9 are provided so as to be joined to the via electrodes 8.
- FIG. 15 is a plan view of the acoustic wave device according to the second embodiment.
- the elastic wave device 11 is different from the first embodiment in that the concave portion 15 is provided on the entire circumference of the outer surface 4c of the support member 4 in plan view. Except for the above points, the elastic wave device 11 of the present embodiment has the same configuration as the elastic wave device 1 of the first embodiment.
- the concave portion 5 is provided on the entire circumference of the outer surface 4c, and the place for absorbing the stress is present in a wide range and uniformly.
- the stress can be effectively dispersed in the entire portion where the piezoelectric substrate 2 is in contact with the outer surface 4 c of the support member 4. Therefore, the piezoelectric substrate 2 is less likely to be damaged.
- the elastic wave device can be used as a duplexer for a high-frequency front end circuit. This example is described below.
- FIG. 16 is a configuration diagram of a communication apparatus having a high-frequency front end circuit.
- components connected to the high-frequency front-end circuit 230 for example, the antenna element 202 and the RF signal processing circuit (RFIC) 203 are also shown.
- the high-frequency front end circuit 230 and the RF signal processing circuit 203 constitute a communication device 240.
- the communication device 240 may include a power supply, a CPU, and a display.
- the high-frequency front-end circuit 230 includes a switch 225, duplexers 201A and 201B, filters 231, 232, low-noise amplifier circuits 214, 224, and power amplifier circuits 234a, 234b, 244a, 244b. Note that the high-frequency front-end circuit 230 and the communication device 240 in FIG. 16 are examples of the high-frequency front-end circuit and the communication device, and are not limited to this configuration.
- the duplexer 201A includes filters 211 and 212.
- the duplexer 201B includes filters 221 and 222.
- the duplexers 201 ⁇ / b> A and 201 ⁇ / b> B are connected to the antenna element 202 via the switch 225.
- the said elastic wave apparatus may be duplexers 201A and 201B, and may be filters 211, 212, 221 and 222.
- the elastic wave device is also applicable to a multiplexer having three or more filters, such as a triplexer in which the antenna terminals of three filters are shared, and a hexaplexer in which the antenna terminals of six filters are shared. Can do.
- the acoustic wave device includes an acoustic wave resonator, a filter, a duplexer, and a multiplexer including three or more filters.
- the multiplexer is not limited to the configuration including both the transmission filter and the reception filter, and may be configured to include only the transmission filter or only the reception filter.
- the switch 225 connects the antenna element 202 and a signal path corresponding to a predetermined band in accordance with a control signal from a control unit (not shown), and is configured by, for example, a SPDT (Single Pole Double Throw) type switch. .
- a SPDT Single Pole Double Throw
- the number of signal paths connected to the antenna element 202 is not limited to one and may be plural. That is, the high frequency front end circuit 230 may support carrier aggregation.
- the low noise amplifier circuit 214 is a reception amplification circuit that amplifies a high frequency signal (here, a high frequency reception signal) via the antenna element 202, the switch 225, and the duplexer 201A and outputs the amplified signal to the RF signal processing circuit 203.
- the low noise amplifier circuit 224 is a reception amplification circuit that amplifies a high-frequency signal (here, a high-frequency reception signal) that has passed through the antenna element 202, the switch 225, and the duplexer 201B, and outputs the amplified signal to the RF signal processing circuit 203.
- the power amplifier circuits 234a and 234b are transmission amplifier circuits that amplify the high frequency signal (here, the high frequency transmission signal) output from the RF signal processing circuit 203 and output the amplified signal to the antenna element 202 via the duplexer 201A and the switch 225.
- the power amplifier circuits 244a and 244b are transmission amplifier circuits that amplify the high-frequency signal (here, the high-frequency transmission signal) output from the RF signal processing circuit 203 and output the amplified signal to the antenna element 202 via the duplexer 201B and the switch 225. .
- the RF signal processing circuit 203 performs signal processing on the high-frequency reception signal input from the antenna element 202 via the reception signal path by down-conversion or the like, and outputs a reception signal generated by the signal processing.
- the RF signal processing circuit 203 performs signal processing on the input transmission signal by up-conversion or the like, and outputs a high-frequency transmission signal generated by the signal processing to the low noise amplifier circuit 224.
- the RF signal processing circuit 203 is, for example, an RFIC.
- the communication apparatus may include a BB (baseband) IC. In this case, the BBIC processes the received signal processed by the RFIC.
- the BBIC processes the transmission signal and outputs it to the RFIC.
- the reception signal processed by the BBIC and the transmission signal before the signal processing by the BBIC are, for example, an image signal or an audio signal.
- the high-frequency front end circuit 230 may include other circuit elements between the above-described components.
- the high-frequency front end circuit 230 may include a duplexer according to a modification of the duplexers 201A and 201B instead of the duplexers 201A and 201B.
- the filters 231 and 232 in the communication device 240 are connected between the RF signal processing circuit 203 and the switch 225 without passing through the low noise amplifier circuits 214 and 224 and the power amplifier circuits 234a, 234b, 244a and 244b.
- the filters 231 and 232 are also connected to the antenna element 202 via the switch 225, similarly to the duplexers 201A and 201B.
- the high-frequency front-end circuit 230 and the communication device 240 configured as described above, by including the elastic wave device of the present invention, an acoustic wave resonator, a filter, a duplexer, a multiplexer including three or more filters, and the like.
- the stress applied to the piezoelectric body such as the piezoelectric substrate can be dispersed, and the piezoelectric substrate is hardly damaged.
- the elastic wave device, the high-frequency front-end circuit, and the communication device according to the embodiment of the present invention have been described with reference to the embodiment and its modified examples, but are realized by combining arbitrary components in the above-described embodiment and modified examples.
- the present invention is not limited to the above-described embodiments, various modifications conceived by those skilled in the art without departing from the spirit of the present invention, and the high-frequency front-end circuit and communication device according to the present invention.
- Various built-in devices are also included in the present invention.
- the present invention can be widely used in communication devices such as mobile phones as an elastic wave resonator, a filter, a duplexer, a multiplexer, a front-end circuit, and a communication device that can be applied to a multiband system.
- Duplexer 202 ... Antenna element 203 ... RF signal processing circuits 211, 212 ... Filter 214 ... Low noise amplifier circuits 221, 222 ... Filter 224 ... Low noise amplifier circuit 225 ... Switch 230 ... High frequency front end circuits 231, 232 ... Filters 234a, 234b ... Power amplifier circuit 240 ... Communication devices 244a, 244b ... Power amplifier circuit
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Abstract
Description
2…圧電基板
3…IDT電極
4…支持部材
4a…開口部
4b…内面
4c…外面
4d…辺
4e…角部
5…凹部
5a…底部
5b…傾斜面
6…カバー部材
6a…接着層
6b…保護層
7…電極パッド
8…ビア電極
9…バンプ
10…誘電体膜
11…弾性波装置
15…凹部
22…圧電薄膜
23…低音速膜
24…高音速部材
34…樹脂層
38…貫通孔
201A,201B…デュプレクサ
202…アンテナ素子
203…RF信号処理回路
211,212…フィルタ
214…ローノイズアンプ回路
221,222…フィルタ
224…ローノイズアンプ回路
225…スイッチ
230…高周波フロントエンド回路
231,232…フィルタ
234a,234b…パワーアンプ回路
240…通信装置
244a,244b…パワーアンプ回路
Claims (9)
- 圧電体と、
前記圧電体上に設けられている機能電極と、
前記機能電極を囲むように、前記圧電体上に設けられている支持部材と、
前記支持部材上に設けられているカバー部材と、
を備え、
前記支持部材は、前記圧電体よりも熱膨張係数が大きく、
前記機能電極は、前記圧電体、前記支持部材及び前記カバー部材により囲まれた中空空間内に設けられており、
前記支持部材は、前記中空空間側の面である内面と、前記内面とは反対側の面である外面と、を有し、かつ、前記内面及び前記外面のうち少なくとも一方に設けられている凹部を有する、弾性波装置。 - 前記凹部において前記支持部材の前記内面と前記外面とを結ぶ方向に沿う長さを深さとしたときに、前記凹部における前記深さが最も深くなる部分は、前記カバー部材よりも前記圧電体に近い、請求項1に記載の弾性波装置。
- 平面視において、前記支持部材は、角部を複数有し、
前記凹部は、前記複数の角部のうち少なくとも1つの角部に設けられている、請求項1または2に記載の弾性波装置。 - 前記凹部は、前記支持部材の前記外面に設けられている、請求項1~3のいずれか1項に記載の弾性波装置。
- 前記凹部は、前記支持部材の前記内面及び前記外面に設けられている、請求項4に記載の弾性波装置。
- 平面視において、前記支持部材は枠状の形状を有し、
前記凹部は、前記支持部材の全周に設けられている、請求項1~5のいずれか1項に記載の弾性波装置。 - 前記機能電極がIDT電極である、請求項1~6のいずれか1項に記載の弾性波装置。
- 請求項1~7のいずれか1項に記載の弾性波装置と、
パワーアンプと、
を備える、高周波フロントエンド回路。 - 請求項8に記載の高周波フロントエンド回路と、
RF信号処理回路と、
を備える、通信装置。
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CN201780077250.7A CN110100387B (zh) | 2016-12-16 | 2017-10-11 | 弹性波装置、高频前端电路以及通信装置 |
JP2018556212A JP6547914B2 (ja) | 2016-12-16 | 2017-10-11 | 弾性波装置、高周波フロントエンド回路及び通信装置 |
US15/929,139 US11005444B2 (en) | 2016-12-16 | 2019-06-06 | Acoustic wave device, radio-frequency front end circuit, and communication device |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009096563A1 (ja) * | 2008-01-30 | 2009-08-06 | Kyocera Corporation | 弾性波装置およびその製造方法 |
JP2010157956A (ja) * | 2009-01-05 | 2010-07-15 | Panasonic Corp | 弾性表面波デバイス |
JP2011199823A (ja) * | 2010-02-26 | 2011-10-06 | Kyocera Corp | 弾性表面波装置 |
JP2014036091A (ja) * | 2012-08-08 | 2014-02-24 | Ricoh Co Ltd | パッケージ構造 |
WO2016199480A1 (ja) * | 2015-06-08 | 2016-12-15 | 株式会社村田製作所 | 弾性波装置 |
Family Cites Families (4)
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CN104995836B (zh) * | 2013-02-27 | 2018-01-19 | 京瓷株式会社 | 弹性波元件、分波器以及通信模块 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009096563A1 (ja) * | 2008-01-30 | 2009-08-06 | Kyocera Corporation | 弾性波装置およびその製造方法 |
JP2010157956A (ja) * | 2009-01-05 | 2010-07-15 | Panasonic Corp | 弾性表面波デバイス |
JP2011199823A (ja) * | 2010-02-26 | 2011-10-06 | Kyocera Corp | 弾性表面波装置 |
JP2014036091A (ja) * | 2012-08-08 | 2014-02-24 | Ricoh Co Ltd | パッケージ構造 |
WO2016199480A1 (ja) * | 2015-06-08 | 2016-12-15 | 株式会社村田製作所 | 弾性波装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021006157A1 (ja) * | 2019-07-10 | 2021-01-14 | 株式会社村田製作所 | 弾性波装置 |
WO2021006156A1 (ja) * | 2019-07-10 | 2021-01-14 | 株式会社村田製作所 | 弾性波装置 |
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