WO2018097533A1 - Masque à cadre intégré et son procédé de production - Google Patents

Masque à cadre intégré et son procédé de production Download PDF

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Publication number
WO2018097533A1
WO2018097533A1 PCT/KR2017/012863 KR2017012863W WO2018097533A1 WO 2018097533 A1 WO2018097533 A1 WO 2018097533A1 KR 2017012863 W KR2017012863 W KR 2017012863W WO 2018097533 A1 WO2018097533 A1 WO 2018097533A1
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WIPO (PCT)
Prior art keywords
mask
frame
integrated
plating film
pattern
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PCT/KR2017/012863
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English (en)
Korean (ko)
Inventor
장택용
Original Assignee
주식회사 티지오테크
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Priority claimed from KR1020170093633A external-priority patent/KR20180057495A/ko
Application filed by 주식회사 티지오테크 filed Critical 주식회사 티지오테크
Publication of WO2018097533A1 publication Critical patent/WO2018097533A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K99/00—Subject matter not provided for in other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C25D1/10—Moulds; Masks; Masterforms
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C25D1/20—Separation of the formed objects from the electrodes with no destruction of said electrodes

Definitions

  • the present invention relates to a frame integrated mask and a method of manufacturing the same. More particularly, the present invention relates to a frame-integrated mask and a method of manufacturing the same, in which the frame and the mask are integrated to prevent deformation of the mask and to align the alignment.
  • the electroplating method is to immerse the positive electrode and the negative electrode in the electrolyte, and to apply the power to electrodeposit the metal thin plate on the surface of the negative electrode, it is possible to manufacture the ultra-thin plate, it is a method that can be expected to mass production.
  • a fine metal mask (FMM) method of depositing an organic material at a desired position by closely attaching a thin metal mask to a substrate is mainly used.
  • the mask is manufactured in a stick form, a plate form, and the like, and then the mask is welded and fixed to the OLED pixel deposition frame.
  • the mask In order to manufacture a large area OLED, several masks may be fixed to the OLED pixel deposition frame, but there is a problem in that the masks are not well aligned.
  • the thickness of the mask film is too thin and the large area in the process of welding fixed to the frame there is a problem that the mask is struck or warped by the load.
  • an object of the present invention is to provide a frame-integrated mask and a method of manufacturing the same in which the mask and the frame form an integrated structure.
  • the present invention is a frame-integrated mask that can be formed at a time without separately configuring the mask and the frame, omitting the process of fixing / aligning the mask to the frame, and clearly aligning the mask to improve the stability of pixel deposition. And it aims at providing the manufacturing method.
  • the above object of the present invention is a frame-integrated mask in which a mask and a frame for supporting the mask are integrally formed, comprising: a mask; And a frame bonded to at least a part of the region of the mask except for the region where the mask pattern is to be formed, wherein the supporting film attached to at least a part of the surface of the frame is integrally connected with the mask with the same material as the plating film. Is achieved by.
  • the above object of the present invention is a frame-integrated mask in which a mask and a frame for supporting the mask are integrally formed, comprising: a mask having a mask pattern; And a frame bonded to at least a portion of the region of the mask except for the region on which the mask pattern is formed, wherein the supporting film attached to at least a portion of the surface of the frame is integrally connected with the mask with the same material as the mask. Is achieved.
  • the mask and the support layer may be simultaneously formed by electroforming.
  • the mask pattern may have a shape that becomes wider or narrower from the top to the bottom.
  • the frame may be a conductive material.
  • the frame may have a shape surrounding the edge of the mask.
  • the frame may have a pair of straight shapes opposite and parallel to each other.
  • the mask and support layer may be made of Invar or Super Invar.
  • the frame integrated mask is used as a fine metal mask (FMM) of OLED pixel deposition, a mask is attached to a target substrate on which pixels are deposited, and the frame may be fixedly installed inside the OLED pixel deposition apparatus.
  • FMM fine metal mask
  • the frame may be formed in a protruding shape to form a stick frame, and at least one end of the stick frame may be fitted into a depression of the mask frame disposed inside the OLED pixel deposition apparatus.
  • the width of the mask pattern may be less than at least 30 ⁇ m.
  • a method of manufacturing a frame-integrated mask formed integrally with the mask and the frame for supporting the mask (a) providing a base plate; (b) placing the frame on one side of the bed; (c) using the base plate and the frame as a cathode body and forming a plating film on the base plate and the frame by electroforming; (d) forming a mask pattern on the plated film produced from the mother plate; And (e) separating the mother plate from the plating film and the frame.
  • a method of manufacturing a frame-integrated mask formed integrally with the mask and the frame for supporting the mask (a) providing a base plate; (b) placing the frame on one side of the bed; (c) using the base plate and the frame as a cathode body and forming a plating film on the base plate and the frame by electroforming; (d) separating the mother plate from the plating film and the frame; And (e) forming a mask pattern on the plating film.
  • the mother board and the frame may be a conductive material.
  • the mother plate may be a single crystal silicon material.
  • the method of forming a mask pattern on a plating film includes the steps of (1) forming a patterned photoresist layer on the plating film; And (2) etching the plating film through the photoresist pattern to form a mask pattern.
  • the method of forming a mask pattern on the plating film may be a method of forming a mask pattern by laser processing the plating film formed on the mother plate.
  • the focus of the laser is formed between the upper surface and the lower surface of the plating film, and the degree of processing of the plating film can be controlled according to the distance from the focus.
  • the process of fixing / aligning the mask to the frame is omitted, and the alignment of the mask is made clear, thereby improving the stability of pixel deposition.
  • FIG. 1 is a schematic view showing an OLED pixel deposition apparatus using an FMM.
  • FIG. 2 is a schematic diagram illustrating a mask.
  • FIG. 3 is a schematic diagram illustrating a frame-integrated mask according to an embodiment of the present invention.
  • FIG. 4 is a schematic diagram illustrating a process of manufacturing the frame-integrated mask of FIG. 3 in accordance with an embodiment of the present invention.
  • FIG. 5 is a schematic diagram illustrating a process of manufacturing the frame-integrated mask of FIG. 3 according to another embodiment of the present invention.
  • FIG. 6 is a schematic diagram illustrating an OLED pixel deposition apparatus to which the frame-integrated mask of FIG. 3 is applied.
  • FIG. 7 and 8 are schematic views illustrating a process of manufacturing the frame-integrated mask of FIG. 3 according to another embodiment.
  • FIG. 9 is a schematic diagram illustrating a frame-integrated mask according to another embodiment of the present invention.
  • FIG. 10 is a schematic diagram illustrating a state in which the frame integrated mask of FIG. 9 is applied to an OLED pixel deposition apparatus according to an exemplary embodiment.
  • PP pixel pattern, mask pattern
  • FIG. 1 is a schematic diagram illustrating an OLED pixel deposition apparatus 200 using an FMM 100.
  • 2 is a schematic diagram illustrating a mask.
  • an OLED pixel deposition apparatus 200 includes a magnet plate 300 in which a magnet 310 is accommodated and a coolant line 350 is disposed, and an organic material source from the bottom of the magnet plate 300. And a deposition source supply 500 for supplying 600.
  • a target substrate 900 such as glass on which the organic source 600 is deposited may be interposed between the magnet plate 300 and the source deposition unit 500.
  • the FMM 100 may be disposed on the target substrate 900 to be in close contact with or very close to the organic material 600.
  • the magnet 310 generates a magnetic field and the FMM 100 may be in close contact with the target substrate 900 by the attraction force by the magnetic field.
  • Stick-type masks see FIG. 2 (a)
  • plate-type masks see FIG. 2 (b)
  • One mask or a plurality of masks may be coupled to the frame 800.
  • the frame 800 is fixedly installed in the OLED pixel deposition apparatus 200, and the mask may be coupled to the frame 800 through a separate attachment and welding process.
  • the deposition source supply unit 500 may supply the organic source 600 while reciprocating the left and right paths, and the organic source 600 supplied from the deposition source supply unit 500 may pass through the pattern PP formed in the FMM mask 100. By doing so, it may be deposited on one side of the target substrate 900.
  • the deposited organic source 600 that has passed through the pattern of the FMM mask 100 may act as the pixel 700 of the OLED.
  • the pattern PP of the FMM mask 100 may be formed to be inclined S (or formed into a tapered shape S). . Since the organic sources 600 passing through the pattern PP in a diagonal direction along the inclined surface may also contribute to the formation of the pixel 700, the pixel 700 may be uniformly deposited in overall thickness.
  • the mask 100a illustrated in FIG. 2A is a stick type mask, and both sides of the stick may be welded and fixed to the OLED pixel deposition frame 800.
  • the mask 100b illustrated in FIG. 2B is a plate-type mask, and may be used in a large area pixel forming process, and the edge of the plate may be welded and fixed to the OLED pixel deposition frame 800.
  • FIG. 2C is an enlarged side sectional view taken along line A-A 'of FIGS. 2A and 2B.
  • a plurality of display patterns DP may be formed in the bodies of the masks 100a and 100b.
  • the display pattern DP is a pattern corresponding to one display such as a smartphone.
  • the plurality of pixel patterns PP corresponding to R, G, and B may be confirmed.
  • the pixel patterns PP may have an inclined shape and a taper shape (see FIG. 2C).
  • a large number of pixel patterns PP are clustered to form one display pattern DP, and a plurality of display patterns DP may be formed on the masks 100: 100a and 100b.
  • the display pattern DP is not a concept representing one pattern, and should be understood as a concept in which a plurality of pixel patterns PP corresponding to one display are clustered.
  • the pixel pattern PP is mixed with the mask pattern PP.
  • the alignment error between the masks may occur, and if a certain mask is deformed or distorted, the mask 100 may be deformed. This may cause misalignment of the entire masks.
  • the edge may not be supported correctly, which may cause the mask to be struck or warped by a load.
  • the process of directly welding and fixing the mask to the frame 800 can be omitted, and the deformation of the mask can be prevented to clarify the alignment. It is done.
  • FIG. 3 is a schematic diagram illustrating a frame-integrated mask 10 according to an embodiment of the present invention.
  • FIG. 3A is a perspective view of the frame-integrated mask 10
  • FIG. 3B is an enlarged side cross-sectional view of BB ′ of FIG. 3A.
  • the frame-integrated mask 10 includes a mask 20a and a frame 30, and the supporting film 20b attached to a part of the surface of the frame 30 is made of the same material as the mask 20a. And may be integrally connected with the mask 20a.
  • the mask 20a and the support film 20b are described with different names and symbols according to the formed positions, the parts of the plating films 20: 20a and 20b which are electrodeposited and plated in the actual electroforming process are electroplated. It is the structure formed at the same time in a process.
  • the mask 20a and the support film 20b may be used in combination with the plating films 20: 20a and 20b.
  • the mask pattern PP may be formed on the mask 10. It is preferable that the mask pattern PP has a substantially tapered shape having a shape that becomes wider or narrower from the top to the bottom.
  • the pattern width may be formed in a size of several to several tens of micrometers, preferably in a size smaller than 30 micrometers.
  • the mask pattern PP may be formed through etching through PR (see FIG. 4) and laser processing (see FIGS. 7 and 8), but is not limited thereto.
  • the mask pattern PP has the same structure as the pixel pattern PP / display pattern DP described above with reference to FIG. 2.
  • the frame 30 may be bonded to at least a portion of the plating film 20.
  • the plating layer 20 may be bonded to the support layer 20b which is a region other than the region of the mask 20a which is a region where the mask pattern PP is formed.
  • the frame 30 preferably has a shape that surrounds the edge of the mask 20a so that the mask 20a can be tightly supported without being knocked or twisted. 3, the rectangular frame 30 is shown, but a closed, circular, polygonal, or the like form is also possible. In addition to this, a pair of straight frames 30 which are opposed to each other in parallel and in contact with both sides of the mask 20a are also possible. On the other hand, the frame 30 may not be extended in the direction perpendicular to the forming surface of the mask 20a, but may be inclined to extend. In this case, the area of the plating film 20 (or the supporting film 20b) electrodeposited on the side surface of the frame 30 becomes wider, and the angle formed with the mask 20a becomes smaller than 90 degrees. There is an advantage that the mask 20a film can be supported more efficiently by reducing the stress acting on the interface connected integrally.
  • the mask 20a is integrally connected with the supporting film 20b of the frame 30, only the frame 30 is moved to the OLED pixel deposition apparatus 200. Alignment of the mask 20a may be completed only by the installation process.
  • FIG. 4 is a schematic diagram illustrating a process of manufacturing the frame-integrated mask of FIG. 3 in accordance with an embodiment of the present invention.
  • a mother plate 40 may be provided.
  • the base plate 40 may use a single large area base plate, or may be arranged by attaching several base plates. When using multiple beds, defective ones can be replaced, repaired and placed in advance.
  • the material of the base plate 40 may be a conductive material.
  • the base plate 40 may be used as a cathode electrode in electroplating.
  • the conductive material in the case of metal, metal oxides may be generated on the surface, impurities may be introduced during the metal manufacturing process, and in the case of the polycrystalline silicon substrate, inclusions or grain boundaries may exist, and the conductive polymer may be present.
  • a base material it is highly likely to contain an impurity, and strength. Acid resistance may be weak.
  • Elements that prevent the uniform formation of an electric field on the surface of the base plate 40, such as metal oxides, impurities, inclusions, grain boundaries, etc., are referred to as "defects." Due to a defect, a uniform electric field may not be applied to the cathode body of the material described above, and a part of the plating film 20 may be formed unevenly.
  • non-uniformity of the plating film 20 and the plating film pattern PP may adversely affect the formation of the pixel.
  • the pattern width of the FMM and the shadow mask can be formed in the size of several to several tens of micrometers, preferably smaller than 30 micrometers, even a defect of several micrometers is large enough to occupy a large proportion in the pattern size of the mask.
  • an additional process for removing metal oxides, impurities, and the like may be performed to remove the defects in the cathode material of the material described above, and another defect such as etching of the anode material may be caused in this process. have.
  • the present invention can use the mother substrate 40 of a single crystal silicon material.
  • the mother plate 40 may be subjected to high concentration doping of 10 19 or more. Doping may be performed on the entirety of the baseplate 40, or only on the surface portion of the baseplate 40.
  • the doped single crystal silicon is free from defects, there is an advantage in that a uniform plating film 20 (or mask 20a) can be generated due to the formation of a uniform electric field on the entire surface during electroplating.
  • the FMM 100 manufactured through the uniform plating film 20 may further improve the image quality level of the OLED pixel.
  • process costs are reduced and productivity is improved.
  • the frame 30 may be disposed on one surface of the mother plate 40.
  • the frame 30 is also made of a metal material such as SUS and Ti so as to form the plating film 20 (or the support film 20b) on the surface during the electroplating process and to ensure the rigidity as the frame 30 at the same time. It is preferable to employ.
  • a material having a low thermal strain in order to prevent deformation of the frame 30 due to heat in the OLED pixel deposition process.
  • the frame 30 may be arranged to surround at least a part of the border in which one or several mother boards are aligned.
  • the rectangular frame 30 is disposed to surround the upper edge of the base plate 40.
  • a predetermined adhesive may be interposed between the frame 30 and the mother plate 40. However, since the base plate 40 is separated in a subsequent process, the adhesive force of the adhesive may be sufficient as long as the frame 30 does not flow on the base plate 40 in the electroplating process.
  • the plating films 20: 20a and 20b may be formed on the mother plate 40 and the frame 30.
  • a combination of the mother plate 40 and the frame 30 is used as the cathode body, and an anode body (not shown) facing the substrate is prepared.
  • the anode body (not shown) may be immersed in the plating liquid (not shown), and all or part of the mother plate 40 and the frame 30 may be immersed in the plating liquid (not shown).
  • the plating liquid may be a material of the plating film 20 that will constitute the mask 20a and the supporting film 20b as an electrolyte solution.
  • an Invar thin plate made of iron nickel alloy is manufactured as the plating film 20
  • a mixed solution of a solution containing Ni ions and a solution containing Fe ions may be used as the plating solution.
  • a super invar thin plate made of iron nickel cobalt alloy is used as the plating film 20. It can also be used as a plating solution.
  • Inva thin plate can be used as a fine metal mask (FMM), a shadow mask (Shadow Mask) in the manufacture of OLED.
  • Invar thin plate has a thermal expansion coefficient of about 1.0 X 10 -6 / °C
  • Super Inba thin plate has a thermal expansion coefficient of about 1.0 X 10 -7 / Since it is so low, there is little possibility that the pattern shape of a mask is deformed by thermal energy, and it is mainly used in high-resolution OLED manufacturing.
  • the plating solution for the target plating film 20 can be used without limitation, and in the present specification, the manufacturing of the Invar thin plate 20 will be described as a main example.
  • the plating film 20 may be electrodeposited on the surfaces of the mother plate 40 and the frame 30.
  • the plating film 20 electrodeposited from the exposed surface of the remaining mother plate 40 except for the surface of the mother plate 40 covered by the frame 30 becomes the mask 20a and is electrodeposited from the exposed surface of the frame 30.
  • the plated film 20 may be the support film 20b.
  • a mask pattern PP may be formed on the plated film 20 (or the mask 20a) generated from the mother plate 40.
  • a patterned 51 photoresist layer 50 may be formed on the plating film 20 (or mask 20a). After the photoresist layer 50 is formed on the entire surface of the mask 20a, the pattern 51 may be formed through a patterning process, and the patterned 51 photoresist layer 50 is directly masked 20a. It may be formed on the front of the). The formation and patterning 51 of the photoresist layer 50 may use a known technique.
  • a mask pattern PP may be formed by etching the mask 20a (or the plating film 20) through the photoresist pattern 51.
  • the shape of the side cross-section of the mask pattern PP may be formed to be inclined in a substantially tapered shape, and the inclined angle may be about 45 ° to 65 °.
  • the mask pattern PP may use any known etching method such as wet etching or dry etching without limitation.
  • the width of the mask pattern PP is wider than the width of the photoresist pattern 51 under the photoresist layer 50.
  • the side surface of the mask pattern PP may be roughly tapered by being etched in an isotropic direction based on the photoresist pattern 51.
  • the photoresist layer 50 may be removed. Only the photoresist layer 50 is removed, and any known technique that does not affect the plating film 20, the frame 30, and the mother plate 40 can be used without limitation.
  • the mother plate 40 may be separated from the frame 30 covered with the mask 20a and the support film 20b.
  • the process of dissolving and removing the adhesive of the frame 30 and the mother plate 40 may be further performed.
  • the frame-integrated mask 10 in which the mask 20a and the frame 30 supporting the mask 20a are integrally formed is completed.
  • FIG. 5 is a schematic diagram illustrating a process of manufacturing the frame-integrated mask 10 of FIG. 3 according to another embodiment of the present invention. Since the processes from (a) to (c) of FIG. 4 are the same, a description thereof will be omitted and will be described later.
  • the mother plate 40 may be separated from the frame 30 covered with the mask 20a and the support layer 20b.
  • the process of dissolving and removing the adhesive of the frame 30 and the mother plate 40 may be further performed.
  • the frame-integrated mask 10 may be prepared in which the mask 20a and the frame 30 supporting the mask 20a are integrally formed.
  • the mask 20a may be a blank mask (or the plating film 20) in which the mask pattern PP is not formed.
  • the mask pattern PP may be formed on the plating film 20 (or the mask 20a).
  • a patterned 51 photoresist layer 50 may be formed on the plating film 20 (or mask 20a). After the photoresist layer 50 is formed on the entire surface of the mask 20a, the pattern 51 may be formed through a patterning process, and the patterned 51 photoresist layer 50 is directly masked 20a. It may be formed on the front of the).
  • the formation and patterning 51 of the photoresist layer 50 may use a known technique.
  • a mask pattern PP may be formed by etching the mask 20a (or the plating film 20) through the photoresist pattern 51. Subsequently, when the photoresist layer 50 is removed, the frame-integrated mask 10 in which the mask 20a and the frame 30 supporting the mask 20a are integrally formed is completed.
  • FIG. 6 is a schematic diagram illustrating an OLED pixel deposition apparatus 200 to which the frame-integrated mask 10 of FIG. 3 is applied.
  • the frame integrated mask 10 may be in close contact with the target substrate 900.
  • Means for fixing the frame 30 such as the robot arm may be disposed inside the OLED pixel deposition apparatus 200 to support and fix the frame 30.
  • the alignment of the mask 10 may be completed only by disposing only the frame 30 in the OLED pixel deposition apparatus 200. Since the mask 20a is integrally connected to the support film 20b and is tightly supported by the edge thereof, and the support film 20b is coupled to the frame 30, the mask 20a is struck or warped under load. The deformation of can be prevented. As a result, the alignment of the mask 10 required for pixel deposition can be made clear.
  • FIG. 7 and 8 are schematic views illustrating a process of manufacturing the frame-integrated mask 10 of FIG. 3 according to another embodiment. Since the processes from (a) to (c) of FIG. 4 are the same, a description thereof will be omitted and will be described later.
  • a mask pattern PP may be formed on the plating film 20 (or the mask 20a) generated from the mother plate 40.
  • the mask pattern PP can be formed by the method of laser-processing the plating film 20 (or the mask 20a).
  • the side surface of the mask pattern PP may be formed to be inclined by tilting and irradiating the laser L.
  • the laser L is most concentrated at the focal point F, and a predetermined energy may be applied even in the region R of several micrometers at the focal point F.
  • the focal point F of the laser L is placed between the upper and lower surfaces of the plated film 20, that is, inside the plated film 20. It can form and can process to the plating film 20 contained in the area
  • the region R may have a circular shape having an approximately curvature, when the plating film 20 is processed and removed according to this shape, the shape of the side cross-section of the mask pattern PP may be formed in a substantially tapered shape.
  • the mother plate 40 may be separated from the frame 30 covered with the mask 20a and the support film 20b. Since it is the same as step (f) of FIG. 4, the description is omitted.
  • the mother plate 40 may be first separated from the frame 30 covered with the mask 20a and the support layer 20b. The process of dissolving and removing the adhesive of the frame 30 and the mother plate 40 may be further performed.
  • the mother plate 40 is separated, the middle portion is plated film 20 (or mask 20a) without mask pattern PP, and the outer portion is plated film 20 (or support film 20b). The combination of the covered frame 30 is shown.
  • the mask pattern PP may be processed by laser processing a portion of the plating film 20 (or the mask 20a) except for the supporting film 20b. Can be formed. Since the method of processing the laser L is the same as that of Fig. 7 (d1), description thereof is omitted. However, since the mask 20a is exposed at the lower surface in addition to the upper surface, it is also possible to process the laser L through both surfaces of the mask 20a.
  • the mother plate 40 may be separated from the frame 30 covered with the mask 20a and the supporting film 20b. Since it is the same as step (f) of FIG. 4, the description is omitted.
  • FIG. 9 is a schematic diagram illustrating a frame-integrated mask 10 'according to another embodiment of the present invention.
  • 9 (a) and 9 (b) are perspective views of the mask 10 'having the protruding shape and the frames 35 and 36 formed integrally, and FIG. 9 (c) expanding CC' of FIG. 9 (a). Side cross section view.
  • the frame-integrated mask 10 ′ includes a mask 20a and frames 35 and 36, and the supporting film 20b attached to some surfaces of the frames 35 and 36 is a mask 20a. It may have the same material as) and may be integrally connected with the mask 20a. Since the frames 35 and 36 are integrally connected to the mask 20, they may also be referred to as "stick frames”.
  • the point that the stick frames 35 and 36 and the mask 20 are integrated is the same as that of the frame integrated mask 10 of FIG. 3.
  • the difference is that the stick frames 35, 36 of the frame-integrated mask 10 ′ are not disposed directly inside the OLED pixel deposition apparatus 200 like the frame 30 (see FIG. 3), and another frame 38. It is a structure fitted to [FIG. 10].
  • the frame 38 may also be referred to as a "mask frame” because at least one frame-integrated mask 10 'is fitted.
  • the mask frame 38 has a depression 39 (see FIG. 10), and stick portions 35 and 36 of the frame-integrated mask 10 ′ may be fitted into the depression 39.
  • FIG. 9A illustrates a stick frame 35 having a rectangular protrusion shape surrounding an edge of the stick-type mask 20a
  • FIG. 9B shows a stick-type mask 20a
  • a pair of straight stick frames 36 are shown facing one another and one other end parallel to each other in parallel.
  • the frame-integrated mask 10 'of FIG. 9 is advantageously manufactured with a smaller area than the frame-integrated mask 10 of FIG. 3 and is intended to insert each into the mask frame 38 in the form of a unit.
  • the depression 39 of the mask frame 38 which is disposed inside the OLED pixel deposition apparatus 200 in advance, serves as a guide rail, so that the unitary mask 10 ′ in the form of each unit is manufactured.
  • the alignment of the mask can be completed only by fitting the (stick frames 35 and 36) to the depression 39.
  • FIG. 10 is a schematic diagram illustrating a state in which the frame-integrated mask 10 ′ of FIG. 9 is applied to the OLED pixel deposition apparatus 200 according to an exemplary embodiment.
  • the manufacturing process of the frame integrated mask 10 ′ of FIG. 9 is the same as the process of FIGS. 4A to 4F, a detailed description thereof will be omitted.
  • the stick frames 35 and 36 disposed on one surface of the mother plate 40 may be formed in a protruding form that can be fitted to at least the depression 39.
  • means for fixing and fixing a mask frame 38 such as a robot arm is disposed inside the OLED pixel deposition apparatus 200 to support and fix the mask frame 38, and to manufacture a frame integrated mask ( 10 ′) may be inserted into the depression 39 of the mask frame 38 disposed inside the OLED pixel deposition apparatus 200.
  • the depression 39 may be formed in a shape corresponding to the stick frames 35 and 36 formed on the plurality of frame integrated masks 10 ′. Since the stick frame 35 as illustrated in FIG. 9A has a rectangular shape, the stick frame 35 may be firmly fixed without being flown when fitted to the recess 39. Since the stick frame 36 as shown in FIG. 9B has a straight shape, the stick frame 36 may be fitted into the depression 39 in a sliding form, or may be disposed by sliding a plurality of frame-integrated masks 10 'in a sliding form. Do.
  • the frame-integrated mask 10, 10 ′ of the present invention forms the mask 20a and is integrally formed with the frames 30, 35, 36, thereby preventing deformation of the mask 20a, This has the effect of making the alignment clear. Further, in the frame integrated masks 10 and 10 'of the present invention, since the mask 20a is integrally connected with the supporting film 20b of the frame 30, only the frames 30, 35, and 36 are OLED pixel deposition apparatuses. There is an effect that the alignment of the mask 20a can be completed only by moving to and installing the 200.

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  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne un masque à cadre intégré et son procédé de production. Le masque à cadre intégré (10) selon la présente invention est un masque à cadre intégré (10) dans lequel un masque (20a) et un cadre (30) le supportant sont intégrés d'un seul tenant, comprenant : un masque (20a) portant un motif de masque (PP) ; et un cadre (30) adhérant à au moins une partie de la zone du masque (20a) excluant les zones portant le motif de masque (PP), où un film de support (20b) fixé à au moins une partie de la surface du cadre (30) est à base du même matériau que le masque (20a) et intégré à celui-ci.
PCT/KR2017/012863 2016-11-22 2017-11-14 Masque à cadre intégré et son procédé de production WO2018097533A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2016-0155991 2016-11-22
KR20160155991 2016-11-22
KR1020170093633A KR20180057495A (ko) 2016-11-22 2017-07-24 프레임 일체형 마스크 및 그 제조방법
KR10-2017-0093633 2017-07-24

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WO2018097533A1 true WO2018097533A1 (fr) 2018-05-31

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WO (1) WO2018097533A1 (fr)

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TWI669404B (zh) * 2018-06-06 2019-08-21 張東暉 金屬蒸鍍遮罩結構
CN110592526A (zh) * 2018-06-12 2019-12-20 张东晖 金属蒸镀遮罩结构
CN115747712A (zh) * 2022-08-25 2023-03-07 京东方科技集团股份有限公司 掩膜板及其制造方法

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KR20060106146A (ko) * 2005-04-06 2006-10-12 삼성에스디아이 주식회사 마스크 및 그의 제조 방법
KR20110021686A (ko) * 2009-08-25 2011-03-04 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. 니켈 실리사이드를 형성하기 위한 개선된 방법
KR20140033736A (ko) * 2012-09-10 2014-03-19 김정식 도금방식으로 성장시킨 메탈 마스크와 그 제작방법
KR20140136294A (ko) * 2013-05-20 2014-11-28 삼성디스플레이 주식회사 무마스크 노광 장치
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KR20110021686A (ko) * 2009-08-25 2011-03-04 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. 니켈 실리사이드를 형성하기 위한 개선된 방법
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KR20140136294A (ko) * 2013-05-20 2014-11-28 삼성디스플레이 주식회사 무마스크 노광 장치
KR20140140865A (ko) * 2013-05-30 2014-12-10 삼성디스플레이 주식회사 마스크 제조 방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI669404B (zh) * 2018-06-06 2019-08-21 張東暉 金屬蒸鍍遮罩結構
CN110592526A (zh) * 2018-06-12 2019-12-20 张东晖 金属蒸镀遮罩结构
CN115747712A (zh) * 2022-08-25 2023-03-07 京东方科技集团股份有限公司 掩膜板及其制造方法

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