WO2021096115A1 - Masque pour fabriquer une delo, et procédé de fabrication de delo - Google Patents

Masque pour fabriquer une delo, et procédé de fabrication de delo Download PDF

Info

Publication number
WO2021096115A1
WO2021096115A1 PCT/KR2020/014922 KR2020014922W WO2021096115A1 WO 2021096115 A1 WO2021096115 A1 WO 2021096115A1 KR 2020014922 W KR2020014922 W KR 2020014922W WO 2021096115 A1 WO2021096115 A1 WO 2021096115A1
Authority
WO
WIPO (PCT)
Prior art keywords
mask
target substrate
oled
pixel
sheet
Prior art date
Application number
PCT/KR2020/014922
Other languages
English (en)
Korean (ko)
Inventor
박진원
이영호
Original Assignee
(주)더숨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020200121732A external-priority patent/KR20210056894A/ko
Application filed by (주)더숨 filed Critical (주)더숨
Priority to CN202080073288.9A priority Critical patent/CN114555854A/zh
Publication of WO2021096115A1 publication Critical patent/WO2021096115A1/fr

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the present invention relates to an OLED manufacturing mask and an OLED manufacturing method. More specifically, it relates to a mask for manufacturing an OLED and a method for manufacturing an OLED capable of performing organic material deposition for realizing a high-resolution pixel.
  • the FMM (Fine Metal Mask) method is mainly used in which an organic material is deposited at a desired location by attaching a thin metal mask to a substrate.
  • the mask is welded and fixed to the OLED pixel deposition frame, but there is a problem in that the large-area mask is not well aligned in the fixing process.
  • the thickness of the mask film is too thin and has a large area, there is a problem that the mask is struck or warped by a load.
  • a micro display applied to a virtual reality (VR)/augmented reality (AR) device has attracted attention.
  • the micro-display In order to display an image right in front of the user's eyes in a VR/AR device, the micro-display must have a smaller screen size than conventional displays, and must implement high quality within a small screen. Accordingly, a mask pattern having a smaller size than a mask used in a conventional ultra-high-definition OLED manufacturing process and a finer alignment of the mask before the pixel deposition process are required.
  • an object of the present invention is to provide a mask for manufacturing an OLED and a method for manufacturing an OLED capable of implementing ultra-high-resolution pixels.
  • an object of the present invention is to provide an OLED manufacturing mask and an OLED manufacturing method that can facilitate the alignment of the mask even when manufacturing a large area OLED.
  • At least one side is open and a mask housing to provide a space for disposing the deposition source supply; And a mask sheet installed on the open side of the mask housing and having a plurality of mask patterns formed thereon.
  • An organic material source may be generated to form an OLED pixel in the deposition source supply unit, and the organic material source may pass through the mask pattern of the mask sheet to form a pixel on the target substrate.
  • the target substrate is a silicon wafer, and a mask cell including a plurality of mask patterns may be formed to correspond to at least one or a plurality of die regions on the silicon wafer.
  • the resolution of the mask pattern may be at least 1,000 pixels per inch (PPI).
  • the material of the mask sheet may be any one of Invar, Super Invar, and Nickel Alloy.
  • the mask sheet is made of a conductive material, and heating may be performed through electrical connection to the mask sheet or application of an induced magnetic field.
  • It may further include a shutter unit installed to face the mask sheet and formed with an opening to cover at least a portion of the mask sheet.
  • the opening includes a plurality of unit openings, and each unit opening may correspond to one or a plurality of die regions of the target substrate.
  • the above object of the present invention (a) arranging the mask to correspond to the target substrate; (b) depositing pixels on a target substrate by supplying an organic material source from a deposition source supply unit disposed in the mask, wherein the mask includes: a mask housing having at least one side open and providing a space for disposing the deposition source supply unit; And a mask sheet installed on an open side of the mask housing and on which a plurality of mask patterns are formed.
  • the target substrate is a silicon wafer, and some regions may correspond to one or more die regions.
  • Step (a) includes: disposing a mask cell including a plurality of mask patterns to correspond to at least one or a plurality of die regions on a target substrate; and step (b) includes, (b1) corresponding to a mask cell Depositing a pixel on at least one or a plurality of die regions on the target substrate to be formed; And (b2) moving the mask cell or the target substrate, disposing the mask cell to correspond to at least one or more other die regions on the target substrate, and then depositing a pixel.
  • FIG. 1 is a schematic diagram showing a conventional OLED manufacturing process.
  • FIG. 2 is a schematic diagram showing a mask according to an embodiment of the present invention.
  • FIG. 3 is a schematic diagram showing a mask according to another embodiment of the present invention.
  • FIG. 4 is a schematic diagram showing an OLED manufacturing process according to an embodiment of the present invention.
  • 5 to 7 are schematic diagrams showing an OLED manufacturing process according to another embodiment of the present invention.
  • FIG. 1 is a schematic diagram showing a conventional OLED manufacturing process.
  • the OLED pixel deposition apparatus 1000 includes a magnet plate 300 in which a magnet 310 is accommodated and a cooling water line 350 is disposed, and an organic material source 600 from a lower portion of the magnet plate 300. It includes a deposition source supply unit 500 to supply ).
  • a target substrate 900 such as glass on which the organic material source 600 is deposited may be interposed between the magnet plate 300 and the source deposition unit 500.
  • a mask 100 (or FMM) that allows the organic material source 600 to be deposited for each pixel may be disposed on the target substrate 900 to be in close contact or very close to each other.
  • the magnet 310 generates a magnetic field and may be in close contact with the target substrate 900 by the magnetic field.
  • the deposition source supply unit 500 may reciprocate the left and right path to supply the organic material source 600, and the organic material sources 600 supplied from the deposition source supply unit 500 pass through the pattern P formed on the mask 100 It may be deposited on one side of the target substrate 900.
  • the deposited organic material source 600 passing through the pattern P of the mask 100 may function as the pixel 700 of the OLED.
  • the pattern of the mask 100 may be formed to be inclined (S) (or formed in a tapered shape (S)).
  • Organic material sources 600 passing through the pattern in a diagonal direction along the inclined surface may also contribute to the formation of the pixel 700.
  • the conventional mask 100 as shown in FIG. 1 has a size corresponding to the target substrate 900 having a large area. Since the mask 100 is a large area including a plurality of cells (patterns corresponding to the die) and has a very thin thickness of several tens of ⁇ m, it is easily struck or distorted by a load. In addition, it is very difficult to check the alignment between the cells in real time through a microscope while adjusting the tensile force to make all the cells flat.
  • the organic material sources 600 are deposited on the target substrate 900 having a large area, it is not easy to deposit accurately enough to spread out and implement an ultra-high-definition pixel. In other words, since pixels corresponding to a plurality of cells of the target substrate 900 are formed through one deposition source supply unit 500, there is a problem that the organic material source 600 spreads without being concentrated in a specific cell.
  • a pixel deposition process may be performed on a silicon wafer rather than a large-area target substrate 900. Since the screen is positioned directly in front of the user's eyes, the micro-display has a screen that is about 1 to 2 inches smaller than the size of a large area. In addition, since it is located close to the user's eyes, the resolution needs to be implemented higher. Accordingly, the present invention is preferably considered to be performed on a silicon wafer of 200mm, 300mm, 450mm class, rather than used in the pixel formation process for the target substrate 900 of a large area.
  • the size of the pixel reaches about 30-50 ⁇ m with 500 ⁇ 600 PPI (pixel per inch), and in the case of 4K UHD and 8K UHD high quality, ⁇ 860 PPI, ⁇ 1600 PPI, which is higher. And so on.
  • a silicon wafer it is advantageous to be employed as a substrate for a high-resolution micro-display because it enables a finer and more precise process compared to a glass substrate by utilizing the technology developed in the semiconductor process.
  • FIG. 2 is a schematic diagram showing a mask according to an embodiment of the present invention.
  • Fig. 2(a) shows a schematic cross-sectional view of the mask
  • Fig. 2(b) shows a schematic plan view of the mask sheet 20.
  • the mask 10 of the present invention includes a mask sheet 20 and a mask housing 30.
  • the mask sheet 20 has a mask pattern P formed on the mask body 21 and may play a role of a mask for masking and passing the organic material source 600.
  • the mask sheet 20 may include a mask cell C on which a plurality of mask patterns P are formed and a dummy DM surrounding the mask cell C.
  • the mask sheet 20 may be a coefficient of thermal expansion of about 1.0 X 10 -6 / °C of invar (invar), about 1.0 X 10 -7 / °C Super Invar (super invar) material. Since the mask sheet 20 made of this material has a very low coefficient of thermal expansion, it is less likely that the pattern shape of the mask is deformed by thermal energy, and thus can be used as a mask in high-resolution OLED manufacturing.
  • the mask sheet 20 is made of nickel (Ni) and nickel-cobalt (Ni- It may be a material such as Co).
  • the mask sheet 20 may be manufactured from a metal sheet produced by a rolling process or electroplating, and one or a plurality of mask cells C may be formed on the mask sheet 20.
  • the mask cell C may be understood as a unit constituting one display or forming a pixel in one or a plurality of die regions of a silicon wafer.
  • the dummy DM corresponds to a portion of the mask body 21 excluding the cell C, and includes only the mask body 21, or the mask body 21 in which a predetermined dummy pattern similar to the mask pattern P is formed. It may include. In the dummy DM, part or all of the dummy DM may be connected to the mask housing 30 in correspondence with the edge of the mask sheet 20.
  • the mask pattern P is formed with a resolution of 1,000 PPI (pixel per inch) or more, preferably 2,000 to 3,000 PPI level or more so as to implement an ultra-high resolution OLED.
  • the width of the mask pattern P may be about 2 to 20 ⁇ m, and the thickness of the mask sheet 20 may be about 2 to 20 ⁇ m.
  • the pitch between the mask patterns P may be formed to be about 2 to 20 ⁇ m.
  • the mask housing 30 may have an empty interior and one side of the mask housing 30 open.
  • a mask sheet 20 may be installed on one open side (eg, upper portion).
  • the mask sheet 20 may be attached by welding or may be installed on the mask housing 30 through an adhesive means, a binding means, or the like. It is preferable that the size of the opening of the mask housing 30 corresponds to the mask sheet 20.
  • the mask housing 30 is preferably formed of the same material as the mask sheet 20 and has the same thermal behavior (thermal flattening coefficient) in terms of pixel accuracy, but is not limited thereto.
  • the mask housing 30 may have a size corresponding to one or a plurality of die regions of the target substrate 900, preferably, a wafer for implementing an ultra-high resolution OLED. The same is true for the size of the mask sheet 20.
  • the mask housing 30 may provide a space in which the deposition source supply unit 500 generating the organic material source 600 is disposed. In another aspect, the mask housing 30 may limit the space through which the organic material source 600 spreads.
  • the deposition distance between the deposition source supply unit 500 disposed in the mask housing 30 and the target substrate 900 may be about 200 mm to 500 mm. It is preferable that the mask housing 30 is formed in a shape having a ratio having a larger vertical length than a horizontal width so that the movement path of the organic material source 600 can induce an angle close to the vertical as much as possible.
  • the organic material source 600 generated by the deposition source supply unit 500 generally rises in a vertical direction, and may rise at an angle within 0° to 50° based on a generally vertical direction. As shown in FIG. 1, when the deposition source supply unit 500 performs deposition at a distance from the target substrate 900, a significant portion of the organic material source 600 is spread at a large angle, and the deposition source supply unit 500 moves horizontally. Even if the deposition is performed while doing so, it is not desirable for intensive and detailed pixel formation. Therefore, it is important to consider that the organic material source 600 in the largest proportion as possible moves close to 0° based on the vertical direction.
  • the organic material source 600 generated from the deposition source supply unit 500 may move within the mask housing 30 and pass through the mask pattern P of the mask sheet 20 to be deposited on the target substrate 900.
  • the organic material source 600 can be deposited by limited to the open side of the mask housing 30 or the size of the mask sheet 20, there is an advantage of realizing detailed deposition and thus realizing an ultra-high resolution OLED. have.
  • the path through which the organic material source 600 moves can be guided in the vertical direction according to the shape of the mask housing 30, there is an advantage that more detailed deposition is possible.
  • the mask sheet 20 can be made small without the need to have a large size corresponding to the target substrate 900 and supported on the mask housing 30, the mask sheet 20 is struck by a load or is not aligned. There is an advantage of minimizing the possibility of misalignment and improving clarity of alignment with respect to the mask sheet 20 having a small size.
  • the deposition source supply unit 500 is disposed inside the mask housing 30 to supply the organic material source 600 to the top, and the organic material sources 600 supplied from the deposition source supply unit 500 are formed on the mask sheet 20. It may be deposited on one side of the target substrate 900 by passing through the pattern P. The deposited organic material source 600 passing through the pattern P of the mask 100 may function as the pixel 700 of the OLED.
  • FIG. 3 is a schematic diagram showing a mask according to another embodiment of the present invention.
  • the organic material source 610 may gradually accumulate on the mask body 21.
  • the width may be reduced to R2 by the organic material source 610 in which the mask pattern P having the width R1 is accumulated. Accordingly, after several hundred deposition processes, the accumulated organic material source 610 is removed through a process of cleaning the mask, but this may cause a decrease in productivity and damage the mask sheet 20.
  • the mask according to another embodiment is characterized in that it further includes a heating means 40 for heating the mask sheet 20.
  • a heating means 40 for heating the mask sheet 20.
  • the heating means 40 heats a portion of the mask sheet 20 to maintain a predetermined temperature, the organic material source 600 is volatilized to prevent the organic material source 600 from condensing or accumulating on the mask sheet 20.
  • the heating means 40 a known means capable of heating the mask sheet 20 may be used.
  • the mask sheet 20 is made of a conductive material such as Invar or super invar nickel alloy, heating is performed through direct electrical connection to the mask sheet 20 or , Heating can also be performed through the application of an induced magnetic field.
  • FIG. 4 is a schematic diagram showing an OLED manufacturing process according to an embodiment of the present invention
  • the mask 10 (or the mask cell C) may be mapped to a specific die area of the target substrate 900 to be deposited.
  • a specific die area may correspond to one die area or a plurality of die areas, such as two or four.
  • the pixel 700 may be formed by depositing an organic material source 600 corresponding to the mask 10 for one die area.
  • the mask 10 intensively deposits the organic material source 600 in a limited space corresponding to one die, and at the same time, the mask sheet 20 also has a mask pattern P having a resolution corresponding to ultra-high quality, so 1,000 PPI As described above, the pixel 700 can be formed.
  • the mask 10 may be moved (S1) to a specific die area of the next target to be deposited. While the mask 10 is fixed without moving, the target substrate 900 (for example, a wafer) may be moved (S2). Movement means not only the X, Y, and Z axes, but also the angle adjustment ( ⁇ ) based on the XY, YZ, and ZX planes.
  • a pixel 700 may be formed in the corresponding die area of the target substrate 900.
  • the mask 10 intensively deposits an organic material source 600 on a limited area corresponding to one die or a few dies, and after moving the position, the organic material source 600 is again in the corresponding die area. It becomes possible to deposit intensively. Accordingly, the pixel 700 can be formed in ultra-high quality for all die regions of the target substrate 900.
  • 5 to 7 are schematic diagrams showing an OLED manufacturing process according to another embodiment of the present invention.
  • the mask 10 may further include a shutter unit 50.
  • 5 to 7 illustrate that the shutter unit 50 is disposed between the mask 10 and the target substrate 900, the shutter unit 50 is coupled to the mask 10 so that the opening 51 It may be a configuration that changes the location.
  • the shutter unit 50 may be installed to face the mask sheet 20. That is, it may be disposed between the mask sheet 20 and the target substrate 900 to face each other so as to cover at least a part of the mask sheet 20.
  • the shutter unit 50 may be installed to move (S1) in the horizontal direction with respect to the mask 10.
  • the shutter unit 50 may be fixed (eg, fixedly installed on the mask 10), and the target substrate 900 may be moved (S2).
  • the shutter unit 50 may have an opening 51 formed therein.
  • the opening 51 may be formed to have a size smaller than that of the mask sheet 20 so as to cover at least a portion of the mask sheet 20.
  • the shutter unit 50 is installed under the mask sheet 20, that is, inside the mask housing 30, at least a part of the mask sheet 20 may be covered.
  • the opening 51 may be formed to have a size corresponding to only one cell C. Since the opening 51 allows only one cell (C) to be opened and the other cell (C) is covered, the organic material source 600 generated by the mask 10 is an opening corresponding to one cell (C). It may be deposited on the target substrate 900 only through 51.
  • the size of the opening 51 of the shutter unit 50 is changed, or the opening 51 covers the portions where the shutter unit 50 covers the mask sheet 20.
  • the mask 10 may correspond to the target substrate 900 to be deposited, and the opening 51 may correspond to a specific die region using the shutter unit 50.
  • a specific die area may correspond to one die area or a plurality of die areas, such as two or four.
  • the pixel 700 may be formed by depositing an organic material source 600 corresponding to the opening 51 in one die area.
  • the mask 10 may be moved to a specific die area of the next target to be deposited. As much as the mask 10 has moved, the opening 51 of the shutter unit 50 is also moved to form the pixel 700 for the corresponding die area. By repeating this process, the pixel 700 may be formed in ultra-high quality for all die regions of the target substrate 900.
  • the opening of the shutter unit 50 may include not one, but a plurality of unit openings 52 and 53.
  • Each of the unit openings 52 and 53 may correspond to one or a plurality of die regions of the target substrate 900. Accordingly, even if the mask pattern P is formed on the mask sheet 20 so that the mask pattern P forms one cell (C) without distinction of several cells (C), the unit openings 52 and 53 It can be positioned so that cells can be distinguished. Consequently, even with one mask sheet 20, pixel deposition for several cells C may be possible.
  • the organic material source 600 may be deposited in correspondence with the two unit openings 52 and 53 in the shutter unit 50 for the two die regions. Pixels 700 for two die regions (or two displays) may be formed in one deposition process.
  • the mask 10 may be moved to a specific die area of the next target to be deposited. As much as the mask 10 has moved, the openings 52 and 53 of the shutter unit 50 are also moved to form the pixel 700 for the corresponding die area. By repeating this process, there is an advantage in that the pixels 700 for two die regions can be formed in ultra-high quality every time.
  • the mask 10 may correspond to the target substrate 900 to be deposited, and the opening 51 may correspond to a specific die region using the shutter unit 50.
  • a specific die area may correspond to one die area or a plurality of die areas, such as two or four.
  • the pixel 700 may be formed by depositing an organic material source 600 corresponding to the opening 51 for one die area.
  • the position of the mask 10 is fixed, and the target substrate 900 may be moved (S2) to a position where the specific die region and the mask 10 correspond to each other.
  • the shutter unit 50 may be in a state in which the opening 51 is closed.
  • the opening 51 of the shutter unit 50 is opened, and an organic material source 600 is deposited on a specific die region corresponding to the opening 51 to form a pixel ( 700) can be formed.
  • the pixel 700 may be formed in ultra-high quality for all die regions of the target substrate 900.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention concerne un masque pour DELO et un procédé de fabrication de DELO. Un masque pour fabriquer une DELO, selon la présente invention, comprend : un boîtier de masque dont au moins un côté est ouvert et qui fournit un espace dans lequel une partie d'alimentation de source de dépôt est disposée; et une feuille de masque, qui est disposée sur le côté ouvert d'un boîtier de masque et comporte une pluralité de motifs de masque formés sur celui-ci.
PCT/KR2020/014922 2019-11-11 2020-10-29 Masque pour fabriquer une delo, et procédé de fabrication de delo WO2021096115A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202080073288.9A CN114555854A (zh) 2019-11-11 2020-10-29 用于制造oled的掩模以及oled制造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20190143760 2019-11-11
KR10-2019-0143760 2019-11-11
KR10-2020-0121732 2020-09-21
KR1020200121732A KR20210056894A (ko) 2019-11-11 2020-09-21 Oled 제조용 마스크 및 oled 제조 방법

Publications (1)

Publication Number Publication Date
WO2021096115A1 true WO2021096115A1 (fr) 2021-05-20

Family

ID=75913063

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2020/014922 WO2021096115A1 (fr) 2019-11-11 2020-10-29 Masque pour fabriquer une delo, et procédé de fabrication de delo

Country Status (2)

Country Link
CN (1) CN114555854A (fr)
WO (1) WO2021096115A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115747753A (zh) * 2022-11-07 2023-03-07 福建华佳彩有限公司 一种tfe遮罩免清洗结构及工艺方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100132430A (ko) * 2009-06-09 2010-12-17 삼성모바일디스플레이주식회사 유기물 세정 방법 및 세정 시스템
KR20130139821A (ko) * 2013-12-02 2013-12-23 김명희 벨트형 증발장치를 이용한 플렉시블 유기소자와 조명용 유기소자 생산용 제작 장치
KR20150056469A (ko) * 2013-11-15 2015-05-26 유니버셜 디스플레이 코포레이션 고진공 oled 증착 공급원 및 시스템
WO2018197008A1 (fr) * 2017-04-28 2018-11-01 Applied Materials, Inc. Procédé de nettoyage d'un système à vide utile à la fabrication de dispositifs oled, procédé de dépôt sous vide sur un substrat pour fabriquer des dispositifs oled, et appareil de dépôt sous vide sur un substrat pour fabriquer des dispositifs oled
KR20180130989A (ko) * 2017-05-31 2018-12-10 주식회사 티지오테크 프레임 일체형 마스크

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003151768A (ja) * 2001-08-31 2003-05-23 Sanyo Electric Co Ltd エレクトロルミネッセンス素子の製造方法及び蒸着マスク
KR100490537B1 (ko) * 2002-07-23 2005-05-17 삼성에스디아이 주식회사 가열용기와 이를 이용한 증착장치
US20040182315A1 (en) * 2003-03-17 2004-09-23 Tokyo Electron Limited Reduced maintenance chemical oxide removal (COR) processing system
KR100553937B1 (ko) * 2003-11-12 2006-02-24 엘지전자 주식회사 발광 유기물질 증착 장치
JP2007173107A (ja) * 2005-12-22 2007-07-05 Kyocera Corp マスク、マスク固定装置、及びマスクを使用して製造するディスプレイの製造方法
US8802200B2 (en) * 2009-06-09 2014-08-12 Samsung Display Co., Ltd. Method and apparatus for cleaning organic deposition materials
KR101288133B1 (ko) * 2011-04-19 2013-07-19 주식회사 에스에프에이 기판 증착 장치
CN202139291U (zh) * 2011-07-07 2012-02-08 京东方科技集团股份有限公司 一种真空蒸镀装置
CN103695846A (zh) * 2013-12-18 2014-04-02 京东方科技集团股份有限公司 一种真空镀膜装置及方法
CN104862647B (zh) * 2015-05-13 2017-10-17 京东方科技集团股份有限公司 一种掩膜板及其制备方法、显示面板、显示装置
CN107190232A (zh) * 2017-07-13 2017-09-22 武汉华星光电半导体显示技术有限公司 一种显示基板的蒸镀装置、蒸镀设备及蒸镀方法
CN107475675A (zh) * 2017-09-11 2017-12-15 武汉华星光电半导体显示技术有限公司 蒸镀机
CN107435131B (zh) * 2017-09-29 2019-08-02 上海天马微电子有限公司 掩膜装置、蒸镀设备以及掩膜装置制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100132430A (ko) * 2009-06-09 2010-12-17 삼성모바일디스플레이주식회사 유기물 세정 방법 및 세정 시스템
KR20150056469A (ko) * 2013-11-15 2015-05-26 유니버셜 디스플레이 코포레이션 고진공 oled 증착 공급원 및 시스템
KR20130139821A (ko) * 2013-12-02 2013-12-23 김명희 벨트형 증발장치를 이용한 플렉시블 유기소자와 조명용 유기소자 생산용 제작 장치
WO2018197008A1 (fr) * 2017-04-28 2018-11-01 Applied Materials, Inc. Procédé de nettoyage d'un système à vide utile à la fabrication de dispositifs oled, procédé de dépôt sous vide sur un substrat pour fabriquer des dispositifs oled, et appareil de dépôt sous vide sur un substrat pour fabriquer des dispositifs oled
KR20180130989A (ko) * 2017-05-31 2018-12-10 주식회사 티지오테크 프레임 일체형 마스크

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115747753A (zh) * 2022-11-07 2023-03-07 福建华佳彩有限公司 一种tfe遮罩免清洗结构及工艺方法
CN115747753B (zh) * 2022-11-07 2024-05-14 福建华佳彩有限公司 一种tfe遮罩免清洗结构及工艺方法

Also Published As

Publication number Publication date
CN114555854A (zh) 2022-05-27

Similar Documents

Publication Publication Date Title
US7396558B2 (en) Integrated mask and method and apparatus for manufacturing organic EL device using the same
EP1209522B1 (fr) Masque pour la fabrication de panneaux d'affichage
KR20190050939A (ko) 기판 지지 장치, 기판 재치 장치, 성막 장치, 기판 지지 방법, 성막 방법 및 전자 디바이스의 제조 방법
WO2018066844A1 (fr) Feuille métallique d'alliage à utiliser en tant que masque de dépôt, masque de dépôt, procédés de fabrication associés, et procédé de fabrication de dispositif électroluminescent organique utilisant ledit masque de dépôt
WO2021096115A1 (fr) Masque pour fabriquer une delo, et procédé de fabrication de delo
WO2018128304A1 (fr) Procédé de fabrication de masque et plaque mère utilisée pour celui-ci
WO2019071696A1 (fr) Tendeur d'écran
WO2019078657A1 (fr) Procédé de gravure au plasma utilisant une cage de faraday
US20180340252A1 (en) System and method for reducing attractive forces between a deposition mask and substrate and a deposition system and method utilizing the same
WO2019132345A1 (fr) Procédé de gravure par plasma utilisant une cage de faraday
JP7241048B2 (ja) 基板支持装置および成膜装置
WO2018097533A1 (fr) Masque à cadre intégré et son procédé de production
WO2019009526A1 (fr) Masque et procédé de fabrication de masque, et platine mère
WO2019156348A1 (fr) Masque intégré à un cadre et procédé de fabrication d'un masque intégré à un cadre
WO2019035661A1 (fr) Procédé de fabrication d'un substrat de moule pour plaque de guidage de lumière de réseau de diffraction et procédé de fabrication de plaque de guidage de lumière de réseau de diffraction
WO2019172557A1 (fr) Procédé de fabrication de masque à cadre intégré
WO2019054717A2 (fr) Masque intégré à une structure
WO2018186634A1 (fr) Équipement de production en série de dispositifs amoled haute résolution faisant appel à une source d'évaporation du type plan
WO2016076556A1 (fr) Appareil de dépôt par évaporation linéaire utilisant le chauffage par induction
KR20210056894A (ko) Oled 제조용 마스크 및 oled 제조 방법
KR20220041542A (ko) Oled 제조 방법
JP2019517623A (ja) 高精度シャドーマスク堆積システム及びその方法
WO2020076020A1 (fr) Masque intégré à un cadre et procédé de fabrication d'un masque intégré à un cadre
WO2012070868A2 (fr) Appareil de presse à chaud
WO2023249244A1 (fr) Appareil de dépôt et procédé de dépôt l'utilisant

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20886664

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20886664

Country of ref document: EP

Kind code of ref document: A1