WO2018090591A1 - 工艺腔室及半导体装置 - Google Patents

工艺腔室及半导体装置 Download PDF

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Publication number
WO2018090591A1
WO2018090591A1 PCT/CN2017/085304 CN2017085304W WO2018090591A1 WO 2018090591 A1 WO2018090591 A1 WO 2018090591A1 CN 2017085304 W CN2017085304 W CN 2017085304W WO 2018090591 A1 WO2018090591 A1 WO 2018090591A1
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WO
WIPO (PCT)
Prior art keywords
chamber
sub
intake
ring
intake ring
Prior art date
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Ceased
Application number
PCT/CN2017/085304
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English (en)
French (fr)
Inventor
邓玉春
邱国庆
赵梦欣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Publication of WO2018090591A1 publication Critical patent/WO2018090591A1/zh
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Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0456—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations

Definitions

  • the present invention relates to the field of semiconductor device manufacturing technology, and in particular, to a process chamber and a semiconductor device.
  • Equipment capacity refers to the number of good products produced during the working hours of the equipment unit. It is an important technical parameter reflecting the processing capacity of the equipment.
  • the degassing device and the annealing device used in the manufacture of integrated circuits need to cooperate with the lifting mechanism of the process chamber to complete the transfer of the wafer before performing the corresponding process. How to improve equipment production capacity by shortening the transfer time and reducing the non-process time has become a major problem that equipment manufacturers need to solve.
  • the chamber body 100 of the prior art process chamber has a single-chamber structure, and the chamber body 100 includes: a chamber, a chamber transfer port 105, a docking mounting block 107, a docking positioning pin 125, Air inlet 119 and so on.
  • the chamber body 100 is integrally processed from a piece of stainless steel or aluminum alloy blank.
  • the chamber body 100 is positioned by the docking locating pin 125 and is fixedly mounted to the transfer chamber by the docking mounting block 107, which transfers the wafer between the chamber body 100 and the transfer chamber.
  • the robot's assembly structure includes a robot, a wrist arm, an elbow arm, and a driver. The robot is a single hand and picks up one wafer at a time.
  • the single-cavity process chamber can only process one wafer at a time, so the process time for processing multiple wafers is long and the equipment capacity is low.
  • the process gas moves in the direction indicated by the arrow in FIG. 1b, that is, the process gas enters the chamber from the air inlet 119 and enters below the heater 300 in the chamber through the long air intake structure, and then The gap between the heater 300 and the chamber is moved above the heater 300.
  • the present invention is directed to at least one of the problems in the prior art, and provides a process chamber and a semiconductor device for increasing equipment throughput.
  • the present invention provides a process chamber including a chamber body having at least two process sub-chambers disposed therein, and the at least two process sub-chambers are in communication.
  • the at least two process sub-chambers comprise a first sub-chamber and a second sub-chamber, the first sub-chamber and the second sub-chamber being identical in structure and arranged side by side in a horizontal direction, and A connection chamber is provided between the two to connect the two.
  • the process chamber further includes an air intake structure, the air intake structure is respectively in communication with the first sub-chamber and the second sub-chamber, and is simultaneously capable of simultaneously facing the first sub-chamber and the The second subchamber delivers gas.
  • the air intake structure includes: an intake passage, a first intake ring, and a second intake ring; the first intake ring is disposed at an upper portion of the first sub-chamber for a sub-chamber conveying gas; the second intake ring being disposed at an upper portion of the second sub-chamber for conveying gas to the second sub-chamber; the intake passage being located at the chamber body
  • the first sub-chamber and the second sub-chamber are symmetrically disposed with respect to the intake passage, and the intake passage includes an intake port, a first air outlet, and a second air outlet,
  • the air inlet is connected to an external air source, and the first air outlet and the second air outlet are respectively in communication with the first air inlet ring and the second air intake ring.
  • the projection of the air inlet passage on a plane parallel to the chamber body is T-shaped or Y-shaped, wherein the air inlet is disposed at a bottom of the chamber body, the first air outlet Located on a side adjacent to the first sub-chamber, the second air outlet is located adjacent to the second sub-chamber side.
  • the first intake ring includes a first intake ring body
  • the second intake ring includes a second intake ring body
  • the first intake ring body and the second intake ring body are both disposed Having gas mixing holes extending in their respective radial directions; the first air outlet and the second air outlet are respectively connected to the gas flow holes of the first intake ring and the second intake ring through.
  • the number of the gas flow holes is plural and evenly distributed along the circumferential direction of the first intake ring; corresponding to the second intake ring, the The number of gas flow holes is plural and evenly distributed along the circumferential direction of the second intake ring.
  • a first gas storage region is formed between the first air inlet ring and the chamber body, and the first gas storage region and the first air outlet and the first air inlet ring are uniformly distributed.
  • a flow hole is connected; and/or a second gas storage area is formed between the second intake ring and the chamber body, the second gas storage area and the second air outlet, the second inlet The gas circulation holes of the gas ring are connected.
  • first intake ring body extends outwardly in a radial direction thereof to form a first intake ring flange
  • second intake ring body extends outward in a radial direction thereof to form a second An intake ring flange
  • first sub-chamber and the second sub-chamber further comprising a first sub-chamber upper cover assembly and a second sub-chamber upper cover assembly, respectively, on the first sub-chamber a cap assembly presses the first intake ring flange against the chamber body, the second subchamber upper cap assembly pressing the second intake ring flange against the chamber body on.
  • a seal ring is disposed between the first intake ring body and the chamber body and between the first intake ring flange and the chamber body to make the first The gas storage region remains sealed; and/or between the second intake ring body and the chamber body and at the second A seal ring is disposed between the gas ring flange and the chamber body to keep the second gas storage region sealed.
  • the present invention also provides a semiconductor device comprising the process chamber of any of the above aspects.
  • the semiconductor device further includes a transfer cavity and a robot, the number of fingers of the robot is the same as the number of the process sub-chambers, and the positions of the fingers are in one-to-one correspondence with the positions of the process sub-chambers, so as to be able to The wafer is simultaneously transferred between the transfer chamber and each of the process sub-chambers.
  • the invention provides a process chamber, wherein at least two process sub-chambers are opened on the chamber body, and the at least two process sub-chambers are kept in communication, so that each process sub-chamber can be in an internal process environment
  • the wafer is processed simultaneously in a consistent manner, thereby improving the processing capacity and process efficiency of the process chamber.
  • the semiconductor device provided by the present invention can improve process efficiency and equipment throughput because it employs the process chamber provided by the present invention.
  • the first process sub-chamber and the second process sub-chamber having the same structure and symmetrically disposed on the chamber body, and the connection cavity is connected to the first process sub-chamber
  • the chamber and the second process sub-chamber can simultaneously process two wafers in the first process sub-chamber and the second process sub-chamber, thereby reducing the process time by half, improving process efficiency and equipment throughput, and simultaneously through the intake structure
  • the intake of the first process subchamber and the second process subchamber can further improve process synchronism, thereby further increasing equipment throughput.
  • the first intake ring and the second intake ring are disposed above the first process sub-chamber and the second process sub-chamber, and are in the cavity
  • An air intake passage respectively communicating with the first intake ring and the second intake ring is disposed in the chamber body, and the gas of the external air source can be simultaneously delivered to the upper portion of the first process sub-chamber and the second process sub-chamber, thereby The upper air intake mode is realized, so that the process gas directly reaches the heater directly, thereby improving the uniformity of the process.
  • the second intake ring is provided with a plurality of gas flow holes extending in a radial direction thereof, so that the process gas passes through the gas flow holes from the circumferential direction of the first intake ring and the second intake ring to the first process sub-chamber respectively
  • Uniform intake of the chamber and the second process sub-chamber further improves the uniformity of the process intake and reduces the pressure difference at different positions on the wafer surface, thereby improving the product yield.
  • Figure 1a is a schematic structural view of a prior art process chamber
  • Figure 1b is a cross-sectional view of a prior art process chamber
  • FIG. 2 is a schematic structural view of a process chamber according to an embodiment of the present invention.
  • FIG. 3 is a schematic structural view of a robot structure for transferring a wafer to a process chamber provided by an embodiment of the present invention
  • FIG. 4a is a schematic cross-sectional view of an intake chamber of a process chamber according to an embodiment of the present invention.
  • Figure 4b is a partial enlarged view of I in Figure 4a;
  • FIG. 5 is a schematic structural diagram of a first intake ring according to an embodiment of the present invention.
  • Figure 5b is a partial enlarged view of II in Figure 5a.
  • Embodiments of the present invention provide a process chamber in which at least two process sub-chambers are opened, and at least two process sub-chambers are kept in communication, so that internal processes of each process sub-chamber The environment is consistent.
  • the arrangement of the at least two process sub-chambers is not limited as long as the robot can ensure normal transfer between the process sub-chamber and the transfer cavity, for example, the following manner can be arranged:
  • the chambers are arranged side by side in the horizontal direction; or, all of the process sub-chambers are stacked in the vertical direction; or, all of the process sub-chambers are not all arranged in the same horizontal plane, or all of them are arranged in the same vertical plane
  • the process sub-chamber is divided into two layers in the vertical direction and two columns in the horizontal direction.
  • the process chamber provided by the embodiment of the invention ensures the stability and consistency of the process by providing at least two process sub-chambers that are connected to each other, and improves the processing capability and the process efficiency.
  • the present invention provides a process chamber including an integrally formed chamber body 100 having a first sub-chamber 101 and a second sub-chamber 102, a first sub-chamber
  • the chamber 101 has the same structure as the second sub-chamber 102 and is symmetrically disposed in the horizontal direction.
  • the first sub-chamber 101 and the second sub-chamber 102 are respectively provided with a film opening 105, and the robot can transfer the wafer to the first sub-chamber 101 via the film opening 105 of the first sub-chamber 101, and via the second sub-chamber
  • the film opening 105 of the chamber 102 is transferred to the second sub-chamber 102.
  • the chamber body 100 is further provided with a connection chamber 103 which is connected between the first sub-chamber 101 and the second sub-chamber 102 in the horizontal direction.
  • the chamber body 100 is fixed and positioned by the docking mounting block 107 and the docking locating pins 125 mounted thereon.
  • Chamber body The side of the 100 provided with the film opening 105 is a mounting surface, and a plurality of docking mounting blocks 107 and docking positioning are disposed at four positions of the chamber body 100 perpendicular to the mounting surface and close to the mounting surface.
  • the pin 125 specifically, a plurality of docking mounting blocks 107 are disposed on the upper and lower surfaces of the chamber body 100 on the side of the film opening 105 (ie, above and below the film opening 105), and the docking positioning pin 125 is fixed to the docking installation.
  • a mating positioning pin 125 is also provided on the outer side of the film opening 105 of the first sub-chamber and the film opening 105 of the second sub-chamber.
  • the chamber body 100 is fixedly mounted to the transfer chamber by abutting locating pins 125.
  • the process chamber provided by the present invention reduces the process time for processing the same number of wafers, thereby improving process efficiency and equipment throughput.
  • the process chamber further includes an intake structure that communicates with the first sub-chamber 101 and the second sub-chamber 102, respectively, and is capable of simultaneously delivering gas to the first sub-chamber 101 and the second sub-chamber 102. .
  • the invention simultaneously injects air into the first sub-chamber and the second sub-chamber through the air intake structure, which can further improve the process synchronization, thereby further improving the equipment production capacity.
  • the intake structure includes: an intake passage 600 located in the chamber body 100, a first intake ring 701 for conveying gas to the first sub-chamber 101, and a second inlet ring 701.
  • the sub-chamber 102 conveys a second intake ring 702 of gas, wherein the first intake ring 701 and the second intake ring 702 are disposed at upper portions of the first sub-chamber 101 and the second sub-chamber 102, respectively.
  • the intake passage 600 is disposed in the chamber body 100 and located between the first sub-chamber 101 and the second sub-chamber 102, for example, the first sub-chamber 101 and the second sub-chamber 102 are opposite to the intake passage 600 Symmetrical settings.
  • the intake passage 600 includes an air inlet 119, a first air outlet 601, and a second air outlet 602.
  • the air inlet 119 is connected to an external air source (not shown), and the first air outlet 601 and the first air inlet
  • the ring 701 is in communication with each other, and the second air outlet 602 is in communication with the second intake ring 702.
  • the first sub-chamber 101 and the second sub-section can be respectively from the middle to the two sides.
  • the chamber 102 delivers gas such that the first sub-chamber 101 and the second sub-chamber 102 are capable of simultaneous intake and relatively uniform intake air.
  • the air inlet 119 is disposed at a lower portion of the chamber body 100, the first air outlet 601 is located on a side adjacent to the first sub-chamber 101, and the second air outlet 602 is located on a side adjacent to the second sub-chamber 102.
  • the projection of the intake passage 600 in a plane parallel to the mounting surface may be T-shaped or Y-shaped.
  • the intake passage 600 be disposed in a T-shape in a plane parallel to the plane of the mounting surface.
  • the first intake ring 701 is disposed at the upper opening of the first sub-chamber 101
  • the second intake ring 702 is disposed at the upper opening of the second sub-chamber 102, thereby implementing the first sub-port.
  • the upper air inlet of the chamber 101 and the second sub-chamber 102 that is, the upper air intake mode is realized, so that the process gas can directly reach directly above the heater 300, and the reaction is uniformly generated on the surface of the wafer, thereby facilitating the improvement of the process. Uniformity.
  • the heat generated by the bulb radiation of the heater 300 can preheat the process gas to prevent the cold process gas from being directly blown onto the surface of the wafer, which is disadvantageous for the process.
  • the first intake ring 701 includes a first intake ring body 703, and the first intake ring body 703 is provided with a gas flow-through hole 704 extending therethrough.
  • a first gas storage region 800 is formed between the first intake ring 701 and the chamber body 100. More specifically, the first gas storage region 800 is formed between the outside of the first intake ring body 703 and the chamber body 100. Annular and closed gas storage area. The first gas storage region 800 is in communication with the first gas outlet 601 and the gas flow holes 704 of the first intake ring 701.
  • the structure and arrangement of the second intake ring 702 are the same as those of the first intake ring 701, and are not described herein again. Similarly, a second gas storage region is formed between the second intake ring 702 and the chamber body 100, and the second gas storage region and the second gas outlet 602 and the gas flow hole 704 of the second intake ring 702 are both in communication.
  • gas from the intake passage 600 can be buffered and leveled in the first gas storage region 800 and the second gas storage region, thus, when the process gas
  • the gas is uniformly distributed into the first sub-chamber 101 and the second sub-chamber 102 from the circumferential direction of the first intake ring 701 and the second intake ring 702 through the gas equalizing holes 704, and can be directly reached.
  • uniform upper air intake is achieved, and the difference in air pressure at different positions on the wafer surface is reduced, thereby improving product yield.
  • the gas equalizing holes 704 of the first intake ring 701 and the gas equalizing holes 704 of the second intake ring 702 are plural.
  • the plurality of gas flow holes 704 are evenly distributed along the circumferential direction of the first intake ring 701
  • the plurality of gas flow holes 704 are evenly distributed along the circumferential direction of the second intake ring 702.
  • the process gas passes through the gas flow holes 704 from the first intake ring 701 and the second intake ring 702.
  • the circumferential direction uniformly feeds the first sub-chamber 101 and the second sub-chamber 102, respectively, further improving the uniformity of the process intake, reducing the difference in air pressure at different positions on the surface of the wafer, thereby improving the product yield.
  • the gas merging hole 704 is flared on the side of the first inlet ring 701 and the second inlet ring 702 adjacent to the first sub-chamber 101 and the second sub-chamber 102, specifically, as shown in the figure As shown in FIG.
  • the process gas can be slowed down.
  • the flow rates in the first sub-chamber 101 and the second sub-chamber 102 prevent the process gas from being ejected, thereby allowing the process gas to enter the chamber at a constant rate.
  • the top end of the first intake ring body 703 extends outward in a radial direction thereof to form a first intake ring flange 705, and the top end of the second intake ring body is oriented in a radial direction thereof. Extension A second intake ring flange is formed.
  • the first sub-chamber 101 and the second sub-chamber 102 further include a first sub-chamber upper cover assembly 501 and a second sub-chamber upper cover assembly 502, a first sub-chamber upper cover assembly 501 and a second sub-chamber
  • the upper cover assembly 502 presses the first intake ring flange 705 and the second intake ring flange against the chamber body 100, respectively.
  • a first sealing ring 706 is disposed between the first intake ring body 703 and the chamber body 100, and between the first intake ring flange 705 and the chamber body 100, and the second intake ring body and the chamber
  • a second sealing ring is disposed between the body 100 and between the second intake ring flange and the chamber body 100 to form a sealed first gas storage region 800 and a second gas storage region.
  • the first sealing ring 706 refers to a sealing ring disposed between the first intake ring 701 and the chamber body 100; the so-called second sealing ring refers to the second intake ring 702 and the chamber body 100. The seal between the two.
  • a first groove is disposed on a surface of the chamber body 100 in contact with the first intake ring flange 705, and the chamber body 100 is in contact with the first intake ring body 703.
  • a first groove is disposed on the surface, and the first sealing ring is received in the first groove for sealing the first storage area 800 between the first intake ring 701 and the chamber body 100;
  • a second groove is disposed on a surface of the chamber body 100 in contact with the second intake ring flange, and a second groove is disposed on a surface of the chamber body 100 in contact with the second intake ring body, the second sealing ring
  • the second recess is disposed in the second recess for sealing the second storage area between the second intake ring 702 and the chamber body 100.
  • the first sealing ring is disposed, and the gap between the first intake ring body 703 and the chamber body 100, the first intake ring flange 705 and the chamber body 100 may be sealed; and the second sealing ring may be disposed. Sealing the gap between the second intake ring body and the chamber body 100, between the second intake ring flange and the chamber body 100, so as to be at the first intake ring 701 and the second intake ring 702
  • the outer side forms an annular and sealed first gas storage region 800 and a second gas storage region such that gas from the intake passage 600 can be buffered and leveled therein; further, through the first intake ring 701 and the second inlet
  • the plurality of gas flow holes 704 on the gas ring 702 can further ensure that the process gas can uniformly enter the first sub-chamber 101 from a plurality of positions in the circumferential direction of the first sub-chamber 101 and the second sub-chamber 102. And within the second subchamber 102.
  • the chamber body in the foregoing embodiment is integrally formed, it may not be limited in practice, and the chamber body may also be assembled from a plurality of parts.
  • the structures of the individual process sub-chambers are not necessarily set to be the same, as long as the process environment of each process sub-chamber can be ensured to be the same and the process and the pick-and-place film can be smoothly performed.
  • an embodiment of the present invention further provides a semiconductor device including the above process chamber provided by the present invention.
  • the semiconductor device further includes a transfer cavity and a robot, wherein the number of fingers of the robot is the same as the number of the process sub-chambers, and the positions of the fingers are in one-to-one correspondence with the positions of the process sub-chambers so as to be able to The wafer is simultaneously transferred between the transfer chamber and each of the process sub-chambers.
  • the manipulator in the semiconductor device of the present invention will now be described by taking a manipulator suitable for the process chamber shown in Fig. 2 as an example.
  • the robot includes: two fingers 901, a wrist arm 902, an elbow arm 903, and a driver 904.
  • the heights of the two fingers 901 are the same, and the wafer can be picked up simultaneously and simultaneously in the transfer chamber and the first sub-cavity.
  • the wafer is transferred between the chambers and between the transfer chamber and the second sub-chamber. Since the two fingers 901 can simultaneously pick up or transfer wafers, process efficiency and equipment throughput can be improved.
  • the robot used in the semiconductor device provided by the present invention may be a robot in the prior art, that is, the number of fingers may be one. In this case, in order to cooperate with each process sub-chamber simultaneously Release the film while using multiple robots at the same time.

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

一种工艺腔室及半导体装置，工艺腔室包括腔室本体（100），腔室本体上开设有至少两个工艺子腔室（101，102），且至少两个工艺子腔室保持连通。通过在腔室本体上开设有至少两个工艺子腔室，且使至少两个工艺子腔室保持连通，而使得各工艺子腔室能够在内部工艺环境一致的情况下同时处理晶片，从而提高工艺效率和设备产能。

Description

工艺腔室及半导体装置 技术领域
本发明涉及半导体设备制造技术领域，具体涉及一种工艺腔室及半导体装置。
背景技术
随着集成电路市场的高速发展，芯片产能扩大的需求一方面给设备商带来了新的市场机遇，另一方面也对设备商现有及前瞻性的技术能力提出了更高的要求。设备产能指设备单位工作时间内良品的产出数，它是反映设备加工能力的一个重要技术参数。集成电路制造中使用的去气设备和退火设备在执行相应的工艺过程前，需要利用机械手与工艺腔室的升降机构配合完成晶片的传递。如何通过缩短传片时间、减少非工艺过程时间来提高设备产能，已经成为设备商亟需解决的一大难题。
如图1a和图1b所示，现有的工艺腔室的腔室本体100为单腔结构，腔室本体100包括：腔室、腔室传片口105、对接安装块107、对接定位销125、进气口119等。其中腔室本体100是由一块不锈钢或者铝合金毛坯一体加工而成。腔室本体100通过对接定位销125定位，并通过对接安装块107固定安装到传输腔上，机械手在腔室本体100与传输腔之间传递晶片。机械手的装配体结构包括机械手、腕机械臂、肘机械臂和驱动器，机械手为单手，每次拾取一个晶片。单腔结构的工艺腔室每次只能处理一个晶片，因此处理多个晶片的工艺时间长，设备产能低。
如图1b所示，工艺气体沿着图1b中的箭头所示方向运动，即，工艺气体从进气口119进入腔室内，并通过长进气孔结构进入到腔室内的加热器300的下面，然后通过加热器300与腔室之间的缝隙运动到加热器300的上方。
尽管上述工艺腔室已广泛应用于半导体设备制造技术领域中，但是由于其为单腔结构，每次只能处理一个晶片，导致处理能力低、工艺时间长，因而设备产能低。
发明内容
本发明针对现有技术中的至少一个问题，提供一种工艺腔室及半导体装置，用以提高设备产能。
本发明为解决上述技术问题，采用如下技术方案：
本发明提供一种工艺腔室，包括腔室本体，在所述腔室本体上开设有至少两个工艺子腔室，且所述至少两个工艺子腔室保持连通。
其中，所述至少两个工艺子腔室包括第一子腔室和第二子腔室，所述第一子腔室和所述第二子腔室结构相同且在水平方向上并排设置，并且在二者之间设置有使二者相连通的连接腔。
其中，所述工艺腔室还包括进气结构，所述进气结构分别与所述第一子腔室和所述第二子腔室连通，且能够同时向所述第一子腔室和所述第二子腔室输送气体。
其中，所述进气结构包括：进气通道、第一进气环和第二进气环；所述第一进气环设置于所述第一子腔室的上部，用于向所述第一子腔室输送气体；所述第二进气环设置于所述第二子腔室的上部，用于向所述第二子腔室输送气体；所述进气通道位于所述腔室本体内，所述第一子腔室和所述第二子腔室相对于所述进气通道对称设置，且所述进气通道包括进气口、第一出气口和第二出气口，所述进气口与外部气源连接，所述第一出气口和第二出气口分别与所述第一进气环和所述第二进气环相连通。
其中，所述进气通道在平行于所述腔室本体的平面上的投影呈T型或Y型，其中，所述进气口设置于所述腔室本体的底部，所述第一出气口位于临近所述第一子腔室的一侧，所述第二出气口位于临近所述第二子腔室的一 侧。
其中，所述第一进气环包括第一进气环本体，所述第二进气环包括第二进气环本体，所述第一进气环本体和第二进气环本体上均设有沿其各自的径向贯通的气体匀流孔；所述第一出气口和所述第二出气口分别与所述第一进气环和所述第二进气环的气体匀流孔相连通。
其中，对应于所述第一进气环，所述气体匀流孔的数量为多个且沿所述第一进气环的周向均匀分布；对应于所述第二进气环，所述气体匀流孔的数量为多个且沿所述第二进气环的周向均匀分布。
其中，所述第一进气环上的气体匀流孔朝向所述第一子腔室的内侧的孔径大于所述第一进气环上的气体匀流孔朝向所述进气通道的孔径；所述第二进气环上的气体匀流孔朝向所述第二子腔室的内侧的孔径大于所述第二进气环上的气体匀流孔朝向所述进气通道的孔径
其中，所述第一进气环与所述腔室本体之间形成有第一气体存储区域，所述第一气体储存区域与所述第一出气口、所述第一进气环的气体匀流孔连通；和/或所述第二进气环与所述腔室本体之间形成有第二气体存储区域，所述第二气体存储区域与所述第二出气口、所述第二进气环的气体匀流孔连通。
其中，所述第一进气环本体的顶端沿其径向方向向外延伸形成第一进气环凸缘，所述第二进气环本体的顶端沿其径向方向向外延伸形成第二进气环凸缘；所述第一子腔室和所述第二子腔室还分别包括第一子腔室上盖组件和第二子腔室上盖组件，所述第一子腔室上盖组件将所述第一进气环凸缘压紧在所述腔室本体上，所述第二子腔室上盖组件将所述第二进气环凸缘压紧在所述腔室本体上。
其中，在所述第一进气环本体与所述腔室本体之间以及在所述第一进气环凸缘与所述腔室本体之间均设有密封圈，以使所述第一气体存储区域保持密闭；和/或在所述第二进气环本体与所述腔室本体之间以及在所述第二进 气环凸缘与所述腔室本体之间均设有密封圈，以使所述第二气体存储区域保持密闭。
作为另一个方面，本发明还提供一种半导体装置，其包括上述任一方案所述的工艺腔室。
其中，半导体装置还包括传输腔和机械手，所述机械手的手指的数量与所述工艺子腔室的数量相同，并且各手指的位置与所述工艺子腔室的位置一一对应，以便能够在所述传输腔与各个工艺子腔室之间同时传输晶片。
本发明能够实现以下有益效果：
本发明提供的工艺腔室，通过在腔室本体上开设有至少两个工艺子腔室，且使所述至少两个工艺子腔室保持连通，而使得各工艺子腔室能够在内部工艺环境一致的情况下同时处理晶片，从而提高该工艺腔室的处理能力和工艺效率。
类似地，本发明提供的半导体装置，由于其采用了本发明提供的工艺腔室，因此能够提高工艺效率和设备产能。
当工艺子腔室的数量为2个时，例如，在腔室本体上开设结构相同且对称设置的第一工艺子腔室和第二工艺子腔室，并设置连接腔连通第一工艺子腔室和第二工艺子腔室，可以同时处理第一工艺子腔室内和第二工艺子腔室内的两个晶片，从而将工艺时间缩短一半，提高工艺效率和设备产能，通过进气结构同时向第一工艺子腔室和第二工艺子腔室进气，能够进一步提高工艺同步性，从而进一步提高设备产能。
并且，在工艺子腔室的数量为2个的情况下，、通过在第一工艺子腔室和第二工艺子腔室的上方设置第一进气环和第二进气环，并在腔室本体内设置分别与第一进气环和第二进气环连通的进气通道，可以将外部气源的气体同时输送至第一工艺子腔室和第二工艺子腔室的上部，从而实现上进气方式，使得工艺气体直接到达加热器的正上方，提高了工艺的均匀性。
进一步地，在工艺子腔室的数量为2个的情况下，通过在第一进气环和 第二进气环上设置多个沿其径向贯通的气体匀流孔，使得工艺气体通过气体匀流孔从第一进气环和第二进气环的圆周方向分别向第一工艺子腔室和第二工艺子腔室均匀进气，进一步提高了工艺进气的均匀性，减小晶片表面不同位置的气压差别，从而提高产品良率。
附图说明
图1a为现有的工艺腔室的结构示意图；
图1b为现有的工艺腔室的剖视图；
图2为本发明实施例提供的工艺腔室的结构示意图；
图3为用于向本发明实施例提供的工艺腔室传递晶片的机械手结构的结构示意图；
图4a为本发明实施例提供的工艺腔室的进气剖面示意图；
图4b为图4a中I处的局部放大图；
图5a为本发明实施例提供的第一进气环的结构示意图；
图5b为图5a中II处的局部放大图。
图例说明：
100、腔室本体 101、第一子腔室 102、第二子腔室
103、连接腔 105、腔室传片口 107、对接安装块
125、对接定位销 119、进气口 300、加热器
501、第一子腔室上盖组件 502、第二子腔室上盖组件 600、进气通道
601、第一出气口 602、第二出气口 701、第一进气环
702、第二进气环 703、第一进气环本体 704、气体匀流孔
705、第一进气环凸缘 800、第一存储区域 901、手指
902、腕机械臂 903、肘机械臂 904、驱动器
具体实施方式
下面结合附图对本发明中的技术方案进行清楚、完整的描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
本发明实施例提供一种工艺腔室，在其腔室本体上开设有至少两个工艺子腔室，且所述至少两个工艺子腔室保持连通，以使各工艺子腔室的内部工艺环境一致。其中，所述至少两个工艺子腔室的排列形式可以不受限制，只要能够保证机械手在工艺子腔室和传输腔之间正常传片即可，例如可以采用下述方式排列：全部工艺子腔室沿水平方向并排设置；或者，全部工艺子腔室沿竖直方向层叠设置；或者，全部工艺子腔室既非全部排列在同一个水平面内，也非全部排列在同一个竖直平面内，例如，工艺子腔室在竖直方向上分为两层、在水平方向上分为两列。本发明实施例提供的工艺腔室，通过设置至少两个彼此连通的工艺子腔室而保证工艺的稳定性和一致性，并提高处理能力和工艺效率。
以下结合图2至图5b并以两个工艺子腔室为例，对本发明的技术方案进行详细描述。
如图2所示，本发明提供一种工艺腔室，其包括一体成型的腔室本体100，腔室本体100上开设有第一子腔室101和第二子腔室102，第一子腔室101与第二子腔室102的结构相同且在水平方向上对称设置。第一子腔室101和第二子腔室102分别设有传片口105，机械手能够将晶片经由第一子腔室101的传片口105传递至第一子腔室101，以及经由第二子腔室102的传片口105传递至第二子腔室102。
如图2所示，腔室本体100上还开设有连接腔103，连接腔103在水平方向上连接在第一子腔室101和第二子腔室102之间。腔室本体100通过对接安装块107及安装于其上的对接定位销125进行固定和定位。腔室本体 100上的设置有传片口105的那一侧为安装面，在腔室本体100的与上述安装面垂直的四个面上且靠近安装面的位置处设置有若干个对接安装块107和对接定位销125，具体地，在传片口105一侧的腔室本体100的上、下表面上(即传片口105的上方和下方)设置有多个对接安装块107，对接定位销125固定在对接安装块107上；以及在第一子腔室的传片口105和第二子腔室的传片口105的外侧也设置有对接定位销125。腔室本体100通过对接定位销125固定安装到传输腔上。
通过在腔室本体100上开设结构相同且对称设置的第一子腔室101和第二子腔室102，并设置连接腔103以连通第一子腔室101和第二子腔室102，可以在工艺环境相同的第一子腔室101和第二子腔室102内同时处理晶片，从而提高工艺腔室整体的处理能力。这样，与现有技术相比，本发明提供的工艺腔室，处理相同数量的晶片所用工艺时间缩短，从而提高工艺效率和设备产能。
进一步地，工艺腔室还包括进气结构，进气结构分别与第一子腔室101和第二子腔室102连通，能够同时向第一子腔室101和第二子腔室102输送气体。本发明通过进气结构同时向第一子腔室和第二子腔室进气，能够进一步提高工艺同步性，从而进一步提高设备产能。
如图4a、图4b所示，进气结构包括：位于腔室本体100内的进气通道600、用于向第一子腔室101输送气体的第一进气环701以及用于向第二子腔室102输送气体的第二进气环702，其中，第一进气环701和第二进气环702分别设置于第一子腔室101和第二子腔室102的上部。
进气通道600设置在腔室本体100内且位于第一子腔室101与第二子腔室102之间，例如，第一子腔室101和第二子腔室102相对于进气通道600对称设置。该进气通道600包括进气口119、第一出气口601和第二出气口602，进气口119与外部气源(图中未绘示)连接，第一出气口601与第一进气环701相连通，第二出气口602与第二进气环702相连通。
本实施例通过在腔室本体100上的第一子腔室101与第二子腔室102之间设置进气通道600，可以从中间分别向两侧的第一子腔室101和第二子腔室102输送气体，从而使得第一子腔室101和第二子腔室102能够同时进气且进气相对均匀。
进气口119设置于腔室本体100的下部，第一出气口601位于临近第一子腔室101的一侧，第二出气口602位于临近第二子腔室102的一侧。
进气通道600在平行于上述安装面的平面内的投影可以呈T型或Y型。为便于加工，优选的，将进气通道600设置成在平行于上述安装面的平面内的投影呈T型。
如图4a所示，第一进气环701设置于第一子腔室101的上开口处，第二进气环702设置于第二子腔室102的上开口处，从而实现从第一子腔室101和第二子腔室102的上方进气，即，实现上进气方式，这样，工艺气体可以直接到达加热器300的正上方，而在晶片表面均匀发生反应，从而有利于提高工艺的均匀性。同时，加热器300的灯泡辐射产生的热量可以对工艺气体进行预热，避免冷的工艺气体直接吹到晶片表面，不利于工艺处理。
以下结合图4b，详细说明第一进气环的结构。
如图4b所示，第一进气环701包括第一进气环本体703，第一进气环本体703上设有沿其径向贯通的气体匀流孔704。第一进气环701与腔室本体100之间形成第一气体存储区域800，更具体地，第一气体存储区域800为形成于第一进气环本体703的外侧与腔室本体100之间的环形且密闭的气体存储区域。该第一气体储存区域800和第一出气口601、第一进气环701的气体匀流孔704均连通。
第二进气环702的结构及设置方式与第一进气环701相同，在此不再赘述。同理，第二进气环702与腔室本体100之间形成第二气体存储区域，第二气体储存区域和第二出气口602、第二进气环702的气体匀流孔704均连通。
通过设置环形的第一气体存储区域和第二气体存储区域，使得来自进气通道600的气体能够在第一气体存储区域800和第二气体存储区域内得到缓冲和匀流，这样，当工艺气体通过气体匀流孔704从第一进气环701和第二进气环702的圆周方向分别向第一子腔室101和第二子腔室102内进气时可以较为均匀，且能直接到达加热器300的正上方，实现上部均匀进气，减小晶片表面不同位置的气压差别，从而提高产品良率。
结合图5a和图5b所示，第一进气环701的气体匀流孔704和第二进气环702的气体匀流孔704均为多个。优选地，多个气体匀流孔704沿第一进气环701的周向均匀分布，且多个气体匀流孔704沿第二进气环702的周向均匀分布。
通过在第一进气环本体703和第二进气环本体上均匀设置多个气体匀流孔704，使得工艺气体通过气体匀流孔704从第一进气环701和第二进气环702的圆周方向分别向第一子腔室101和第二子腔室102均匀进气，进一步提高了工艺进气的均匀性，减小晶片表面不同位置的气压差别，从而提高产品良率。优选的，气体匀流孔704在第一进气环701和第二进气环702的靠近第一子腔室101和第二子腔室102的一侧呈喇叭口状，具体的，如图5b所示，对于第一进气环701上的气体匀流孔704而言，其朝向第一子腔室101的内侧的孔径大于其朝向进气通道600的孔径；对于第二进气环702上的气体匀流孔704而言，其朝向第二子腔室102的内侧的孔径大于其朝向进气通道600的孔径。
通过将气体匀流孔704在第一进气环701和第二进气环702的靠近第一子腔室101和第二子腔室102的一侧设置为喇叭口状，能够减缓工艺气体进入第一子腔室101和第二子腔室102内的流速，避免工艺气体出现喷射的情况，从而使工艺气体匀速进入腔室。
结合图4a和图4b所示，第一进气环本体703的顶端沿其径向方向向外延伸形成第一进气环凸缘705，第二进气环本体的顶端沿其径向方向向外延 伸形成第二进气环凸缘。第一子腔室101和第二子腔室102还包括第一子腔室上盖组件501和第二子腔室上盖组件502，第一子腔室上盖组件501和第二子腔室上盖组件502分别将第一进气环凸缘705和第二进气环凸缘压紧在腔室本体100上。
在第一进气环本体703与腔室本体100之间、以及第一进气环凸缘705与腔室本体100之间设有第一密封圈706，在第二进气环本体与腔室本体100之间，以及第二进气环凸缘与腔室本体100之间设有第二密封圈，以形成密闭的第一气体存储区域800和第二气体存储区域。所谓第一密封圈706指的是设置在第一进气环701与腔室本体100之间的密封圈；所谓第二密封圈指的是设置在第二进气环702与腔室本体100之间的密封圈。
具体的，如图4b所示，在腔室本体100与第一进气环凸缘705接触的表面上设置有第一凹槽，以及在腔室本体100与第一进气环本体703接触的表面上设置有第一凹槽，第一密封圈容置于第一凹槽内，用于密封第一进气环701与腔室本体100之间的第一存储区域800；相应的，在腔室本体100与第二进气环凸缘接触的表面上设置有第二凹槽，以及在腔室本体100与第二进气环本体接触的表面上设置有第二凹槽，第二密封圈容置于第二凹槽内，用于密封第二进气环702与腔室本体100之间的第二存储区域。
设置第一密封圈，可以将第一进气环本体703与腔室本体100之间、第一进气环凸缘705与腔室本体100之间的间隙进行密封；设置第二密封圈，可以将第二进气环本体与腔室本体100之间、第二进气环凸缘与腔室本体100之间的间隙进行密封，从而在第一进气环701和第二进气环702的外侧形成环形且密闭的第一气体存储区域800和第二气体存储区域，使得来自进气通道600的气体能够在此得到缓冲和匀流；进一步地，通过第一进气环701和第二进气环702上的多个气体匀流孔704，可以进一步保证工艺气体能够从第一子腔室101和第二子腔室102的圆周方向的多个位置均匀地进入到第一子腔室101和第二子腔室102内。
需要说明的是，尽管前述实施例中的腔室本体为一体成型，但是在实际应用中可以不局限于此，腔室本体也可以由多个部分组装而成。并且，各个工艺子腔室的结构也不必设置为相同，只要能够保证各个工艺子腔室的工艺环境相同且可以顺利进行工艺和取放片即可。
进一步需要说明的是，当工艺子腔室的数量为两个以上时，各个工艺子腔室的结构及子腔室之间的连通方式等，可以参照前述两个工艺子腔室的实施例，在此不再赘述。
此外，本发明实施例还提供一种半导体装置，该半导体装置包括本发明提供的上述工艺腔室。
进一步地，所述半导体装置还包括传输腔和机械手，其中，机械手的手指的数量与工艺子腔室的数量相同，并且各手指的位置与各工艺子腔室的位置一一对应，以便能够在传输腔与各个工艺子腔室之间同时传输晶片。
下面以适用于图2所示工艺腔室的机械手为例对本发明半导体装置中的机械手进行说明。
如图3所示，该机械手包括：两个手指901、腕机械臂902、肘机械臂903和驱动器904，两个手指901的高度相同，可以同时拾取晶片并同时在传输腔和第一子腔室之间、以及在传输腔和第二子腔室之间传输晶片。由于两个手指901可以同时拾取或传输晶片，因此可以提高工艺效率和设备产能。
需要说明的是，在实际应用中，本发明提供的半导体装置所用机械手可以为现有技术中的机械手，即，其手指数量可以为一个，这种情况下，为了配合各个工艺子腔室同时取放片，而需同时使用多个机械手。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (13)

  1. 一种工艺腔室，包括腔室本体，其特征在于，所述腔室本体上开设有至少两个工艺子腔室，且所述至少两个工艺子腔室保持连通。
  2. 如权利要求1所述的工艺腔室，其特征在于，所述至少两个工艺子腔室包括第一子腔室和第二子腔室，所述第一子腔室和所述第二子腔室结构相同且在水平方向上并排设置，并且在二者之间设置有使二者相连通的连接腔。
  3. 如权利要求2所述的工艺腔室，其特征在于还包括进气结构，所述进气结构分别与所述第一子腔室和所述第二子腔室连通，且能够同时向所述第一子腔室和所述第二子腔室输送气体。
  4. 如权利要求3所述的工艺腔室，其特征在于，所述进气结构包括：进气通道、第一进气环和第二进气环；所述第一进气环设置于所述第一子腔室的上部，用于向所述第一子腔室输送气体；所述第二进气环设置于所述第二子腔室的上部，用于向所述第二子腔室输送气体；
    所述进气通道位于所述腔室本体内，所述第一子腔室和所述第二子腔室相对于所述进气通道对称设置，且所述进气通道包括进气口、第一出气口和第二出气口，所述进气口与外部气源连接，所述第一出气口和第二出气口分别与所述第一进气环和所述第二进气环相连通。
  5. 如权利要求4所述的工艺腔室，其特征在于，所述进气通道在平行于所述腔室本体的平面上的投影呈T型或Y型，其中，所述进气口设置于所述腔室本体的底部，所述第一出气口位于临近所述第一子腔室的一侧，所述第二出气口位于临近所述第二子腔室的一侧。
  6. 如权利要求4所述的工艺腔室，其特征在于，所述第一进气环包括第一进气环本体，所述第二进气环包括第二进气环本体，所述第一进气环本体和第二进气环本体上均设有沿其各自的径向贯通的气体匀流孔；
    所述第一出气口和所述第二出气口分别与所述第一进气环和所述第二进气环的气体匀流孔相连通。
  7. 如权利要求6所述的工艺腔室，其特征在于，对应于所述第一进气环，所述气体匀流孔的数量为多个且沿所述第一进气环的周向均匀分布；对应于所述第二进气环，所述气体匀流孔的数量为多个且沿所述第二进气环的周向均匀分布。
  8. 如权利要求6所述的工艺腔室，其特征在于，所述第一进气环上的气体匀流孔朝向所述第一子腔室的内侧的孔径大于所述第一进气环上的气体匀流孔朝向所述进气通道的孔径；
    所述第二进气环上的气体匀流孔朝向所述第二子腔室的内侧的孔径大于所述第二进气环上的气体匀流孔朝向所述进气通道的孔径。
  9. 如权利要求6所述的工艺腔室，其特征在于，所述第一进气环与所述腔室本体之间形成有第一气体存储区域，所述第一气体储存区域与所述第一出气口、所述第一进气环的气体匀流孔连通，和/或
    所述第二进气环与所述腔室本体之间形成有第二气体存储区域，所述第二气体存储区域与所述第二出气口、所述第二进气环的气体匀流孔连通。
  10. 如权利要求9所述的工艺腔室，其特征在于，所述第一进气环本体的顶端沿其径向方向向外延伸形成第一进气环凸缘，所述第二进气环本体的顶端沿其径向方向向外延伸形成第二进气环凸缘；
    所述第一子腔室和所述第二子腔室还分别包括第一子腔室上盖组件和第二子腔室上盖组件，所述第一子腔室上盖组件将所述第一进气环凸缘压紧在所述腔室本体上，所述第二子腔室上盖组件将所述第二进气环凸缘压紧在所述腔室本体上。
  11. 如权利要求10所述的工艺腔室，其特征在于，在所述第一进气环本体与所述腔室本体之间以及在所述第一进气环凸缘与所述腔室本体之间均设有密封圈，以使所述第一气体存储区域保持密闭；和/或
    在所述第二进气环本体与所述腔室本体之间以及在所述第二进气环凸缘与所述腔室本体之间均设有密封圈，以使所述第二气体存储区域保持密闭。
  12. 一种半导体装置，其特征在于，包括如权利要求1-11任一项所述的工艺腔室。
  13. 如权利要求12所述的半导体装置，其特征在于，还包括传输腔和机械手，所述机械手的手指的数量与所述工艺子腔室的数量相同，并且各手指的位置与所述工艺子腔室的位置一一对应，以便能够在所述传输腔与各个工艺子腔室之间同时传输晶片。
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