WO2018086196A1 - Electroluminescent film and preparation method therefor - Google Patents
Electroluminescent film and preparation method therefor Download PDFInfo
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- WO2018086196A1 WO2018086196A1 PCT/CN2016/111148 CN2016111148W WO2018086196A1 WO 2018086196 A1 WO2018086196 A1 WO 2018086196A1 CN 2016111148 W CN2016111148 W CN 2016111148W WO 2018086196 A1 WO2018086196 A1 WO 2018086196A1
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2383/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
- C08J2383/04—Polysiloxanes
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2483/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
- C08J2483/04—Polysiloxanes
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/16—Applications used for films
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
- C08L2205/025—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
- C08L2205/035—Polymer mixtures characterised by other features containing three or more polymers in a blend containing four or more polymers in a blend
Definitions
- the invention relates to the field of illuminating illumination, in particular to an electroluminescent film and a preparation method thereof.
- LED lighting technology is the third generation of electric light source. Compared with the first generation of thermal radiation electric light source and the second generation of gas discharge electric light source, LED light source has high efficiency, life is 100 times that of incandescent lamp, and energy saving is sodium lamp. 70% of the results have been widely applied and leaps and bounds. However, LED light sources also have many disadvantages such as large heat generation, glare, complicated packaging process, high cost, and many faults.
- packaging is the key link. Specifically, the luminescence mechanism of semiconductor materials determines a single LED. The chip cannot emit white light of continuous spectrum. Therefore, it is necessary to mix two or more complementary colors of light to form white light.
- white LED blue LED+YAG yellow phosphor, RGB Three-color LED, UV LED+ multi-color phosphor, and the realization of white LED is in the packaging.
- LED The preparation of white light chips requires very complicated process steps, such as cleaning the support, crystal expansion, solid crystal, short baking, wire bonding (gold wire), pre-testing, filling (including phosphor), long baking, post-testing, Divided color separation, packaging, etc. Filling and baking are key steps in the packaging process.
- the packaging process has many drawbacks, such as dispensing with a dispenser, the package adhesive is not easy to mix evenly; the phosphor powder is heavy, easy to settle, causing large changes in color temperature and index, and must be sorted; the package adhesive is not easy to defoam, resulting in packaging There are many defective products in the chip; many production processes, long working hours, low efficiency, high cost, low yield and poor stability.
- LED white light sources now have obvious shortcomings in production, use, and manufacturing costs. Especially when LED white light source is applied as a surface light source, existing LED white light sources often cannot solve the uniform light emission. The problem of degree can not meet the needs of practical use and industrial production.
- An object of the present invention is to provide an electroluminescent film and a method of fabricating the same that overcomes the deficiencies of existing LEDs, particularly white LEDs.
- the technical solution adopted by the present invention is: an electroluminescent film, the mass ratio of each component is:
- the catalyst is a Custer Platinum catalyst.
- the component of the inhibitor is 1-ethynyl-1-cyclohexanol, 2-phenyl-3-butyn-2-ol, One or more of 3,5-dimethyl-1-hexyne-3-ol.
- composition of the tackifier is vinyl triethoxysilane, vinyl tris(ethoxymethoxy)silane, ⁇ -(3,4- Epoxycyclohexyl)ethyltrimethoxysilane, ⁇ -methacryloxypropyltrimethoxysilane, ⁇ -methacryloxypropylmethyldimethoxysilane, ⁇ - Methacryloyloxypropylmethyldiethoxysilane, ⁇ -(2,3-epoxypropoxy)propylmethyldimethoxysilane, ⁇ -(2,3-epoxypropoxy) Propyltrimethoxysilane, ⁇ -(2,3- One or more of propylene oxide propyl triethoxysilane.
- the invention also discloses a preparation method of an electroluminescent film based on the above formula component, and the specific steps are as follows:
- Step 1 Weigh the ingredients and mix well.
- Step 2 The mixture obtained by mixing the steps 1 is placed in a kneader and kneaded uniformly.
- step 3 the object obtained in the step 2 is extruded into a film having a thickness of 0.05 to 2 mm.
- the principle of wave-particle duality is adopted, and the LED is utilized.
- the wave emitted by the wafer activates the luminescent film to illuminate and utilizes certain bands of LEDs.
- the advantages of high luminous efficiency of the crystal are adjusted to improve the luminous efficiency of the luminescent film, and at the same time, a pure light source with high brightness and no glare can be obtained, and the brightness of the light source can exceed 200 lm/W or more, and the LED is not required.
- the luminescent film can be activated by directly attaching a complete luminescent film to the surface of the substrate.
- the present invention can adjust the color temperature of the light source by directly adjusting the formulation of the luminescent film in real time.
- the color temperature of the light source is no longer with the LED
- the package of the chip is related, and the radiation heat dissipation by the invention is adopted, and the heat dissipation area of the nano-radiation heat-dissipating material and the surface light-emitting film is large, so that the P-N junction temperature of the surface light source and the external temperature of the light source are greatly reduced.
- the formula of the invention is simple and convenient to manufacture, and the prepared electroluminescent film is obviously superior to the existing LED light-emitting structure from photoelectricity, industrial production convenience and unit production cost, and has wide application space.
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Abstract
Disclosed is an electroluminescent film, comprising the following components by mass: 48.05-49.21% of fluorescent powder, 19.69% of methyl vinyl silicone rubber, 8.68-9.84% of methyl vinyl MQ high-viscosity silicone resin, 8.68-9.84% of fumed silica, 8.68-9.84% of vinyl silicone oil, 0.019-0.59% of hydroxy silicone oil, 0.01-0.98% of nano-radiation heat dissipation material, 0.19% of hydrogen-containing silicone oil, 0.00009-0.0019% of inhibitor, 0.0006-0.0019% of catalyst, and 0.19-0.98% of tackifier. The present invention has simple formula and is conveniently to prepare; moreover, the prepared electroluminescent film is obviously better than an existing LED light-emitting structure in terms of photoelectricity, industrial production convenience, and unit production cost, and can be widely applied.
Description
技术领域 Technical field
本发明涉及一种发光照明领域,具体的说是一种电致发光膜及其制备方法。The invention relates to the field of illuminating illumination, in particular to an electroluminescent film and a preparation method thereof.
背景技术 Background technique
半导体及 LED
照明技术是第三代电光源,相比第一代热辐射电光源和第二代气体放电电光源有巨大的进步, LED 光源效率高,寿命是白炽灯的 100 倍,节能是钠灯的 70%
,因而得到了广泛的应用和突飞猛进的发展。但 LED 光源也存在发热量大、眩目、封装工艺复杂、成本高、故障多等诸多弊端。 Semiconductor and LED lighting technology is the third generation of electric light source. Compared with the first generation of thermal radiation electric light source and the second generation of gas discharge electric light source, LED light source has high efficiency, life is 100 times that of incandescent lamp, and energy saving is sodium lamp. 70% of the results have been widely applied and leaps and bounds. However, LED light sources also have many disadvantages such as large heat generation, glare, complicated packaging process, high cost, and many faults.
在白光 LED 制备的过程中,封装是关键环节,具体的说:半导体材料的发光机理决定了单一的 LED
芯片无法发出连续光谱的白光,因此工艺上必须混合两种以上互补色的光而形成白光,目前实现白光 LED 的方法主要有三种:蓝光 LED+YAG 黄色荧光粉, RGB
三色 LED ,紫外 LED+ 多色荧光粉,而白光 LED 的实现都是在封装环节。In the process of white LED manufacturing, packaging is the key link. Specifically, the luminescence mechanism of semiconductor materials determines a single LED.
The chip cannot emit white light of continuous spectrum. Therefore, it is necessary to mix two or more complementary colors of light to form white light. Currently, there are three main methods for implementing white LED: blue LED+YAG yellow phosphor, RGB
Three-color LED, UV LED+ multi-color phosphor, and the realization of white LED is in the packaging.
此外, LED
白光芯片的制备需要非常复杂的工艺步骤才能实现,如清洗支架、扩晶、固晶、短烤、焊线(金线)、前测、灌胶(含荧光粉)、长烤、后测、分光分色、包装等。其中灌胶和烘烤是封装过程中关键步骤。该封装工艺存在诸多弊端,如使用点胶机点胶,封装胶不容易混合均匀;荧光粉比重大,易沉降,造成色温和显指变化大,必须分拣;封装胶不易脱泡,造成封装芯片残次品多;生产流程多、工时长、效率低、成本高、成品率低、稳定性差。In addition, LED
The preparation of white light chips requires very complicated process steps, such as cleaning the support, crystal expansion, solid crystal, short baking, wire bonding (gold wire), pre-testing, filling (including phosphor), long baking, post-testing, Divided color separation, packaging, etc. Filling and baking are key steps in the packaging process. The packaging process has many drawbacks, such as dispensing with a dispenser, the package adhesive is not easy to mix evenly; the phosphor powder is heavy, easy to settle, causing large changes in color temperature and index, and must be sorted; the package adhesive is not easy to defoam, resulting in packaging There are many defective products in the chip; many production processes, long working hours, low efficiency, high cost, low yield and poor stability.
综上所述,现在 LED 白光光源在生产、使用、制备成本等诸多方面均存在明显的不足,特别将
LED 白光光源应用成面光源时,现有的 LED 白光光源往往不能很好的解决发光均匀度的问题,不能很好的满足实际使用及工业化生产的需要。 In summary, LED white light sources now have obvious shortcomings in production, use, and manufacturing costs. Especially when LED white light source is applied as a surface light source, existing LED white light sources often cannot solve the uniform light emission. The problem of degree can not meet the needs of practical use and industrial production.
发明内容 Summary of the invention
本发明的目的在于克服现有 LED ,特别是白光 LED 所存在的不足提供一种电致发光膜及其制备方法。SUMMARY OF THE INVENTION An object of the present invention is to provide an electroluminescent film and a method of fabricating the same that overcomes the deficiencies of existing LEDs, particularly white LEDs.
为实现上述目的,本发明所采用的技术方案是:一种电致发光膜,各组份的质量占比为:In order to achieve the above object, the technical solution adopted by the present invention is: an electroluminescent film, the mass ratio of each component is:
荧光粉 48.05-49.21% Phosphor 48.05-49.21%
甲基乙烯基硅橡胶 19.69% Methyl vinyl silicone rubber 19.69%
甲基乙烯基 MQ 高粘度硅树脂 8.68-9.84% Methyl vinyl MQ high viscosity silicone resin 8.68-9.84%
气相白炭黑 8.68-9.84% Gas phase white carbon black 8.68-9.84%
乙烯基硅油 8.68-9.84% Vinyl silicone oil 8.68-9.84%
羟基硅油 0.019-0.59% Hydroxy silicone oil 0.019-0.59%
纳米辐射散热材料 0.01-0.98% Nano-radiation heat dissipation material 0.01-0.98%
含氢硅油 0.19% Hydrogen-containing silicone oil 0.19%
抑制剂 0.00009-0.0019% Inhibitor 0.00009-0.0019%
催化剂 0.0006-0.0019% Catalyst 0.0006-0.0019%
增粘剂 0.19-0.98% 。 Tackifier 0.19-0.98%.
进一步的说,催化剂为卡斯特铂金催化剂。Further, the catalyst is a Custer Platinum catalyst.
进一步的说,抑制剂的成分为含 1- 乙炔基 -1- 环已醇、 2- 苯基 -3- 丁炔 -2- 醇、
3,5- 二甲基 -1- 己炔 -3- 醇中的一种或数种。Further, the component of the inhibitor is 1-ethynyl-1-cyclohexanol, 2-phenyl-3-butyn-2-ol,
One or more of 3,5-dimethyl-1-hexyne-3-ol.
进一步的说,增粘剂的成分为含乙烯基三乙氧基硅烷、乙烯基三 ( 乙氧甲氧基 ) 硅烷、β -(3,4-
环氧环己基 ) 乙基三甲氧基硅烷、γ - 甲基丙烯酰氧基丙基三甲氧基硅烷、γ - 甲基丙烯酰氧基丙基甲基二甲氧基硅烷、γ -
甲基丙烯酰氧基丙基甲基二乙氧基硅烷、γ -(2,3- 环氧丙氧 ) 丙基甲基二甲氧基硅烷、γ -(2,3- 环氧丙氧 ) 丙基三甲氧基硅烷、γ -(2,3-
环氧丙氧 ) 丙基三乙氧基硅烷中的一种或多种。Further, the composition of the tackifier is vinyl triethoxysilane, vinyl tris(ethoxymethoxy)silane, β-(3,4-
Epoxycyclohexyl)ethyltrimethoxysilane, γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropylmethyldimethoxysilane, γ-
Methacryloyloxypropylmethyldiethoxysilane, γ-(2,3-epoxypropoxy)propylmethyldimethoxysilane, γ-(2,3-epoxypropoxy) Propyltrimethoxysilane, γ-(2,3-
One or more of propylene oxide propyl triethoxysilane.
本发明还公开了一种基于上述配方组份的电致发光膜的制备方法,具体步骤如下:The invention also discloses a preparation method of an electroluminescent film based on the above formula component, and the specific steps are as follows:
步骤1、称取配方原料并混合均匀。 Step 1. Weigh the ingredients and mix well.
步骤2、将步骤1混合得到的混合物放入捏合机内,混炼均匀。 Step 2. The mixture obtained by mixing the steps 1 is placed in a kneader and kneaded uniformly.
步骤3,将步骤2得到的物体挤压成膜,膜的厚度为 0.05-2mm 。In step 3, the object obtained in the step 2 is extruded into a film having a thickness of 0.05 to 2 mm.
本发明实施时,与 L 晶元配合,采用了波粒二象性原理,利用 LED
晶元发出的波来激活发光膜发光,并且利用某些波段 LED
晶元发光效率高的优点来调整,以提高发光膜的发光效率,同时能获得高亮度、无眩光的纯净光源,光源的亮度可超过 200lm/W 以上,且不需要在 LED
封装时敷粉或贴膜,不再需要制备 LED 白光芯片,只需要在在基板上阵列(倒装) LED
低功率晶元,完成后,再直接在基板表面贴上完整的发光膜,即可激活发光膜发光,此外,本发明实时,直接调整发光膜的配方即可调整光源的色温。光源的色温不再与 LED
芯片的封装相关,且用由本发明采用辐射散热,通过纳米辐射散热材料和面光源发光膜散热面积大的优势,使面光源的 P-N 结温和光源的外温大为降低。In the practice of the present invention, in combination with the L-crystal, the principle of wave-particle duality is adopted, and the LED is utilized.
The wave emitted by the wafer activates the luminescent film to illuminate and utilizes certain bands of LEDs
The advantages of high luminous efficiency of the crystal are adjusted to improve the luminous efficiency of the luminescent film, and at the same time, a pure light source with high brightness and no glare can be obtained, and the brightness of the light source can exceed 200 lm/W or more, and the LED is not required.
Applying powder or film during packaging, no need to prepare LED white chip, only need to array (flip) LED on the substrate
After the low-power crystal unit is completed, the luminescent film can be activated by directly attaching a complete luminescent film to the surface of the substrate. In addition, the present invention can adjust the color temperature of the light source by directly adjusting the formulation of the luminescent film in real time. The color temperature of the light source is no longer with the LED
The package of the chip is related, and the radiation heat dissipation by the invention is adopted, and the heat dissipation area of the nano-radiation heat-dissipating material and the surface light-emitting film is large, so that the P-N junction temperature of the surface light source and the external temperature of the light source are greatly reduced.
本发明的配方简单、制作方便,且制备成的电致发光膜从光电性、工业生产便利性以及单位生产成本均明显优于现有的LED发光结构,具备广泛的应用空间。The formula of the invention is simple and convenient to manufacture, and the prepared electroluminescent film is obviously superior to the existing LED light-emitting structure from photoelectricity, industrial production convenience and unit production cost, and has wide application space.
具体实施方式 detailed description
为方便对本发明作进一步的理解,现举出实施例对本发明作进一步的说明。In order to facilitate a further understanding of the present invention, the present invention will be further described by the embodiments.
实施例1: Example 1:
称取荧光粉 500.5 克、甲基乙烯基硅橡胶 196 . 9 克、甲基乙烯基 MQ 高粘度硅树脂 96.8
克、气相白炭黑 96.8 克、乙烯基硅油 96.8 克、羟基硅油 0.19 克、纳米辐射散热材料 0.1 克、含氢硅油 1.9 克、 1- 乙炔基 -1-
环已醇 0.0009 克、卡斯特铂金催化剂 0.006 克、乙烯基三乙氧基硅烷 9.8
克。将称取配方原料并混合均匀,再将混合得到的混合物放入捏合机内,混炼均匀,最后将得到的物体挤压成膜,膜的厚度为 0.07mm 。 Weigh 500.5 grams of phosphor, methyl vinyl silicone rubber 196 . 9 g, methyl vinyl MQ high viscosity silicone 96.8
Gram, gas phase white carbon black 96.8 grams, vinyl silicone oil 96.8 grams, hydroxyl silicone oil 0.19 grams, nano radiation heat sink material 0.1 grams, hydrogen silicone oil 1.9 grams, 1- ethynyl -1-
Cyclohexanol 0.0009 g, Castel Platinum catalyst 0.006 g, vinyl triethoxysilane 9.8
Gram. The ingredients of the formula are weighed and mixed uniformly, and the mixture obtained by mixing is placed in a kneader, kneaded uniformly, and finally the obtained object is extruded into a film having a thickness of 0.07 mm.
实施例 2 :Example 2:
称取荧光粉 505.5 克、甲基乙烯基硅橡胶 196 . 9 克、甲基乙烯基 MQ 高粘度硅树脂 91.8
克、气相白炭黑 97.8 克、乙烯基硅油 96.8 克、羟基硅油 0.19 克、纳米辐射散热材料 0.1 克、含氢硅油 1.9 克、 2- 苯基 -3- 丁炔
-2- 醇 0.0009 克、卡斯特铂金催化剂 0.006 克、乙烯基三 ( 乙氧甲氧基 ) 硅烷 8.8
克。将称取配方原料并混合均匀,再将混合得到的混合物放入捏合机内,混炼均匀,最后将得到的物体挤压成膜,膜的厚度为 0.17mm 。 Weigh 505.5 grams of phosphor, methyl vinyl silicone rubber 196 . 9 g, methyl vinyl MQ high viscosity silicone 91.8
Gram, gas phase white carbon black 97.8 grams, vinyl silicone oil 96.8 grams, hydroxyl silicone oil 0.19 grams, nano radiation heat dissipation material 0.1 grams, hydrogen silicone oil 1.9 grams, 2-phenyl-3-butyne
-2- Alcohol 0.0009 g, Castel Platinum catalyst 0.006 g, vinyl tris (ethoxymethoxy) silane 8.8
Gram. The ingredients of the formula are weighed and mixed uniformly, and the mixture obtained by mixing is placed in a kneader, kneaded uniformly, and finally the obtained object is extruded into a film having a thickness of 0.17 mm.
实施例 3:Example 3:
称取荧光粉 499.5 克、甲基乙烯基硅橡胶 196 . 9 克、甲基乙烯基 MQ 高粘度硅树脂 95.8
克、气相白炭黑 97.8 克、乙烯基硅油 97.8 克、羟基硅油 0.19 克、纳米辐射散热材料 5.1 克、含氢硅油 1.9 克、 3,5- 二甲基 -1-
己炔 -3- 醇 0.0009 克、卡斯特铂金催化剂 0.006 克、γ -(2,3- 环氧丙氧 ) 丙基三乙氧基硅烷 4.8
克。将称取配方原料并混合均匀,再将混合得到的混合物放入捏合机内,混炼均匀,最后将得到的物体挤压成膜,膜的厚度为 0.2mm 。 Weighed 499.5 grams of phosphor, methyl vinyl silicone rubber 196 . 9 g, methyl vinyl MQ high viscosity silicone 95.8
Gram, gas phase white carbon black 97.8 g, vinyl silicone oil 97.8 g, hydroxy silicone oil 0.19 g, nano-radiation heat-dissipating material 5.1 g, hydrogen-containing silicone oil 1.9 g, 3,5-dimethyl-1-
Hexyne-3-ol 0.0009 g, Castel Platinum catalyst 0.006 g, γ-(2,3-epoxypropoxy)propyltriethoxysilane 4.8
Gram. The ingredients of the formula are weighed and mixed uniformly, and the mixture obtained by mixing is placed in a kneader, kneaded uniformly, and finally the obtained object is extruded into a film having a thickness of 0.2 mm.
以上所述 , 仅是本实用新型的较佳实施而已 , 并非对本实用新型作任何形式上的限制 ,
任何熟悉本专业的技术人员都可能利用上述技术内容加以变更或修饰为等同变化的等效实施例 , 在此,凡未脱离本发明的技术方案内容 ,
就依据本实用新型的技术实质对以上实施例所作的任何简单修改、等同变化与修饰,均仍属于本实用新型技术方案的范围内。 The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any form.
Any person skilled in the art may use the above technical content to change or modify the equivalent embodiment, which is equivalent to the change of the technical solution of the present invention.
Any simple modifications, equivalent changes and modifications made to the above embodiments in accordance with the technical spirit of the present invention are still within the scope of the technical solutions of the present invention.
Claims (5)
- 一种电致发光膜,其特征在于:各组份的质量占比为:An electroluminescent film characterized in that the mass ratio of each component is:荧光粉 48.05-49.21%Phosphor 48.05-49.21%甲基乙烯基硅橡胶 19.69%Methyl vinyl silicone rubber 19.69%甲基乙烯基 MQ 高粘度硅树脂 8.68-9.84%Methyl vinyl MQ high viscosity silicone resin 8.68-9.84%气相白炭黑 8.68-9.84%Gas phase white carbon black 8.68-9.84%乙烯基硅油 8.68-9.84%Vinyl silicone oil 8.68-9.84%羟基硅油 0.019-0.59%Hydroxy silicone oil 0.019-0.59%纳米辐射散热材料 0.01-0.98%Nano-radiation heat dissipation material 0.01-0.98%含氢硅油 0.19%Hydrogen-containing silicone oil 0.19%抑制剂 0.00009-0.0019%Inhibitor 0.00009-0.0019%催化剂 0.0006-0.0019%Catalyst 0.0006-0.0019%增粘剂 0.19-0.98% 。Tackifier 0.19-0.98%.
- 一种电致发光膜的制备方法,其特征在于: A method for preparing an electroluminescent film, characterized in that:步骤1、称取配方原料并混合均匀;Step 1. Weigh the ingredients of the formula and mix them evenly;步骤2、将步骤1混合得到的混合物放入捏合机内,混炼均匀;Step 2, the mixture obtained by mixing in step 1 is placed in a kneading machine, and the mixture is uniformly mixed;步骤3,将步骤2得到的物体挤压成膜,膜的厚度为 0.05-2mm 。In step 3, the object obtained in the step 2 is extruded into a film having a thickness of 0.05 to 2 mm.
- 如权利要求 1 中所述的一种电致发光膜,其特征在于:催化剂为卡斯特铂金催化剂。 An electroluminescent film according to claim 1 wherein the catalyst is a Custer Platinum catalyst.
- 如权利要求 1 中所述的一种电致发光膜,其特征在于:抑制剂的成分为含 1- 乙炔基 -1- 环已醇、 2- 苯基 -3- 丁炔 -2- 醇、 3,5- 二甲基 -1- 己炔 -3- 醇中的一种或数种。 An electroluminescent film according to claim 1, wherein the inhibitor component comprises 1-ethynyl-1-cyclohexanol, 2-phenyl-3- One or several of butyne-2-ol and 3,5-dimethyl-1-hexyne-3-ol.
- 如权利要求 1 中所述的一种电致发光膜,其特征在于:增粘剂的成分为含乙烯基三乙氧基硅烷、乙烯基三 ( 乙氧甲氧基 ) 硅烷、β -(3,4- 环氧环己基 ) 乙基三甲氧基硅烷、γ - 甲基丙烯酰氧基丙基三甲氧基硅烷、γ - 甲基丙烯酰氧基丙基甲基二甲氧基硅烷、γ - 甲基丙烯酰氧基丙基甲基二乙氧基硅烷、γ -(2,3- 环氧丙氧 ) 丙基甲基二甲氧基硅烷、γ -(2,3- 环氧丙氧 ) 丙基三甲氧基硅烷、γ -(2,3- 环氧丙氧 ) 丙基三乙氧基硅烷中的一种或多种。 An electroluminescent film according to claim 1, wherein the composition of the tackifier is vinyl triethoxysilane or vinyl tris (ethoxymethoxy) Silane, β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropylmethylmethyl Oxysilane, γ - Methacryloyloxypropylmethyldiethoxysilane, γ-(2,3-epoxypropoxy)propylmethyldimethoxysilane, γ-(2,3-epoxypropoxy) Propyltrimethoxysilane, γ-(2,3- One or more of propylene oxide propyl triethoxysilane.
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CN115813591A (en) * | 2022-10-25 | 2023-03-21 | 哈尔滨工程大学 | Tooth occlusion stress distribution detection method |
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