WO2018080117A3 - Light emitting device - Google Patents

Light emitting device Download PDF

Info

Publication number
WO2018080117A3
WO2018080117A3 PCT/KR2017/011709 KR2017011709W WO2018080117A3 WO 2018080117 A3 WO2018080117 A3 WO 2018080117A3 KR 2017011709 W KR2017011709 W KR 2017011709W WO 2018080117 A3 WO2018080117 A3 WO 2018080117A3
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
electrode
face
emitting device
supporting part
Prior art date
Application number
PCT/KR2017/011709
Other languages
French (fr)
Korean (ko)
Other versions
WO2018080117A2 (en
Inventor
우도철
방세민
이명희
Original Assignee
서울반도체주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울반도체주식회사 filed Critical 서울반도체주식회사
Publication of WO2018080117A2 publication Critical patent/WO2018080117A2/en
Publication of WO2018080117A3 publication Critical patent/WO2018080117A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133615—Edge-illuminating devices, i.e. illuminating from the side
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Abstract

A light emitting device is disclosed. A light emitting device according to an embodiment comprises: a base comprising a supporting part, and a first electrode and a second electrode coupled to the supporting part; and a light emitting diode mounted on the base, wherein the supporting part comprises a first face, a second face opposite to the first face, two side faces, a front face, and a rear face, each of the first electrode and the second electrode comprises a mounting portion exposed to the front face, a contacting portion located on a partial area of the first face, and a connection portion connecting the mounting portion and the contacting portion within the supporting portion, and the light emitting diode is electrically connected to the mounting portions of the first electrode and the second electrode.
PCT/KR2017/011709 2016-10-25 2017-10-23 Light emitting device WO2018080117A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2016-0139450 2016-10-25
KR1020160139450A KR102624115B1 (en) 2016-10-25 2016-10-25 Light emitting device

Publications (2)

Publication Number Publication Date
WO2018080117A2 WO2018080117A2 (en) 2018-05-03
WO2018080117A3 true WO2018080117A3 (en) 2018-08-09

Family

ID=62023862

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2017/011709 WO2018080117A2 (en) 2016-10-25 2017-10-23 Light emitting device

Country Status (2)

Country Link
KR (1) KR102624115B1 (en)
WO (1) WO2018080117A2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100839122B1 (en) * 2006-12-21 2008-06-20 서울반도체 주식회사 Side view type led lamp and its fabricating method and light emittid apparatus comprising the same
KR100875701B1 (en) * 2008-06-12 2008-12-23 알티전자 주식회사 Light emitting didode package
JP2012064940A (en) * 2010-09-14 2012-03-29 Hon Hai Precision Industry Co Ltd Light emitting diode package and light emitting diode
KR101403247B1 (en) * 2013-01-31 2014-06-02 선순요 Led package and fabricating method
KR20160093370A (en) * 2015-01-29 2016-08-08 엘지이노텍 주식회사 Light emitting device package and lighting device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5068472B2 (en) * 2006-04-12 2012-11-07 昭和電工株式会社 Method for manufacturing light emitting device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100839122B1 (en) * 2006-12-21 2008-06-20 서울반도체 주식회사 Side view type led lamp and its fabricating method and light emittid apparatus comprising the same
KR100875701B1 (en) * 2008-06-12 2008-12-23 알티전자 주식회사 Light emitting didode package
JP2012064940A (en) * 2010-09-14 2012-03-29 Hon Hai Precision Industry Co Ltd Light emitting diode package and light emitting diode
KR101403247B1 (en) * 2013-01-31 2014-06-02 선순요 Led package and fabricating method
KR20160093370A (en) * 2015-01-29 2016-08-08 엘지이노텍 주식회사 Light emitting device package and lighting device

Also Published As

Publication number Publication date
KR20180045402A (en) 2018-05-04
WO2018080117A2 (en) 2018-05-03
KR102624115B1 (en) 2024-01-12

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