WO2018077090A1 - 磁性薄膜沉积腔室及薄膜沉积设备 - Google Patents

磁性薄膜沉积腔室及薄膜沉积设备 Download PDF

Info

Publication number
WO2018077090A1
WO2018077090A1 PCT/CN2017/106688 CN2017106688W WO2018077090A1 WO 2018077090 A1 WO2018077090 A1 WO 2018077090A1 CN 2017106688 W CN2017106688 W CN 2017106688W WO 2018077090 A1 WO2018077090 A1 WO 2018077090A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnetic
thin film
film deposition
deposition chamber
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/106688
Other languages
English (en)
French (fr)
Inventor
杨玉杰
张同文
夏威
丁培军
王厚工
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Naura Microelectronics Equipment Co Ltd
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Priority to JP2019522851A priority Critical patent/JP7030804B2/ja
Priority to KR1020197013886A priority patent/KR102138811B1/ko
Priority to SG11201903540XA priority patent/SG11201903540XA/en
Publication of WO2018077090A1 publication Critical patent/WO2018077090A1/zh
Priority to US16/386,651 priority patent/US10622145B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H01F41/183—Sputtering targets therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/22—Heat treatment; Thermal decomposition; Chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/02—Permanent magnets [PM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/02—Permanent magnets [PM]
    • H01F7/0273—Magnetic circuits with PM for magnetic field generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution

Definitions

  • the present invention relates to the field of microelectronics, and in particular to a magnetic thin film deposition chamber and a thin film deposition apparatus.
  • the integrated circuit manufacturing process can significantly reduce the size of the processor, but there are still some core components such as integrated inductors, noise suppressors, etc., which face many difficulties in high frequency, miniaturization, integration, etc. .
  • soft magnetic thin film materials having high magnetization, high magnetic permeability, high resonance frequency, and high electrical resistivity have attracted more and more attention.
  • the cutoff frequency of the soft magnetic film material can be adjusted.
  • a common method for controlling the in-plane uniaxial anisotropy field of soft magnetic films is magnetic field induced deposition, which has the advantages of simple process, no need to increase process steps, and less damage to the chip, and is the preferred method for industrial production.
  • the present invention aims to at least solve one of the technical problems existing in the prior art, and proposes a magnetic thin film deposition chamber and a thin film deposition apparatus capable of forming a magnetic field above the susceptor.
  • the horizontal magnetic field of the in-plane anisotropy of the film satisfies the need for the production equipment to prepare a magnetic film layer having in-plane anisotropy on a large-sized workpiece to be processed.
  • a magnetic thin film deposition chamber comprising a chamber body in which a pedestal is disposed for carrying a workpiece to be processed, and a bias magnetic field device is also included.
  • a magnetic field device is used to form a horizontal magnetic field above the susceptor for causing the magnetic film layer deposited on the workpiece to be processed to have an in-plane anisotropy.
  • the bias magnetic field device comprises: a magnet set disposed around the base, the magnet set for forming the horizontal magnetic field above the base.
  • the magnet group comprises two segments of arc-shaped magnets symmetrically disposed around the base, and wherein one of the N poles of the magnet and the S pole of the other of the magnets are directed to the base.
  • the set of magnets comprises a closed annular magnet that is formed by permanent magnetization of the permanent magnet material to form the horizontal magnetic field.
  • the magnet group comprises two sets of sub-magnets in an arc shape, which are symmetrically arranged around the base;
  • Each set of the sub-magnet sets includes a plurality of magnetic columns, and the plurality of magnetic columns are arranged along a circumferential direction of the susceptor.
  • the magnetic pole directions of the respective magnetic columns are parallel to each other.
  • the magnetic pole direction of each of the magnetic columns is disposed along a radial direction of the base.
  • the magnetic columns are horizontally disposed, and wherein an N pole of each of the magnetic columns of one of the sub magnet groups and an S pole of each of the magnetic columns of the other of the sub magnet groups Both point to the pedestal.
  • the magnetic columns are vertically disposed, and wherein each of the one of the sub-magnet sets The N pole of the magnetic column and the S pole of each of the magnetic columns of the other of the sub magnet groups are vertically upward.
  • the magnetic columns are disposed obliquely, and wherein an N pole of each of the magnetic columns of one of the sub magnet groups and an S pole of each of the magnetic columns of the other of the sub magnet groups Both are inclined upward toward the direction of the base.
  • a portion of the magnetic columns near the ends of the arc has a distribution density smaller than a distribution density of another portion of the magnetic column near the middle of the arc.
  • the magnetic columns in the two sets of the sub-magnet sets are arranged such that the N pole of any one of the magnetic columns pointing to the pedestal and the magnetic column receiving the magnetic lines of force emitted by the N pole
  • the spacing between the S poles of the pedestal is greater than or equal to the diameter of the workpiece to be machined.
  • the bias magnetic field device comprises:
  • An inner fixing plate and an outer fixing plate are disposed on the support plate and respectively located at an inner side and an outer side of the magnet group for respectively fixing two ends of the bias magnetic field device;
  • An upper cover located above the bias magnetic field device, and fixedly connected to the outer fixing plate and the inner fixing plate respectively;
  • the bias magnetic field device is located in a space surrounded by the support plate, the outer fixing plate, the inner fixing plate, and the upper cover.
  • the magnetic thin film deposition chamber further includes a shielding assembly for shielding the bias magnetic field device from depositing target material on the bias magnetic field device.
  • the shielding component comprises:
  • the shield comprising a first vertical portion, a horizontal portion and a second vertical portion, the first vertical portion being disposed around an inner side of a sidewall of the chamber body, an outer circumference of the horizontal portion Connecting with a lower end of the first vertical portion, an inner circumference of the horizontal portion is connected to an upper end of the second vertical portion;
  • the horizontal portion and the second vertical portion are respectively located above and inside the bias magnetic field device.
  • the magnetic thin film deposition chamber further includes a support member and a pressure ring, wherein
  • the pressure ring is used to press an edge region of the upper surface of the workpiece to be processed
  • the support member is coupled to a lower end of the second vertical portion for supporting the pressure ring.
  • annular boss is disposed inside the side wall of the chamber body, the annular boss being located below the horizontal portion and outside of the second vertical portion;
  • the bias magnetic field device is located in an annular space formed by a side wall of the chamber body, the annular boss, the horizontal portion, and the second vertical portion.
  • the bias magnetic field device is in contact with the upper surface of the annular boss.
  • a cooling passage is circumferentially disposed in a circumferential direction of the side wall of the chamber body and/or the annular boss, and the annular boss and the cooling chamber are cooled by passing a cooling medium to the cooling passage.
  • a bias magnetic field device is provided.
  • a horizontal gap is formed between the inner peripheral wall of the bias magnetic field device and the outer peripheral wall of the second vertical portion.
  • the horizontal gap is greater than or equal to 0.5 mm.
  • the vertical gap is less than or equal to 5 mm.
  • the present invention also provides a thin film deposition apparatus including at least one first deposition chamber for depositing a magnetic film layer, each of the first deposition chambers being deposited by the magnetic thin film provided by the present invention. Chamber.
  • the thin film deposition apparatus is configured to deposit a magnetic thin film stack, the magnetic thin film stack includes a magnetic/isolation unit; and the magnetic/isolation unit includes one or more sets of film layers, the film layer set a magnetic film layer and a spacer layer, and a plurality of sets of the magnetic layer and the spacer of the film layer group
  • the separation layer is alternately disposed, and the thin film deposition apparatus further includes:
  • At least one second deposition chamber for depositing the isolation layer.
  • the magnetic film laminate further comprises an adhesive layer,
  • the thin film deposition apparatus further includes at least one third deposition chamber for depositing the adhesion layer.
  • the thin film deposition apparatus further includes a transfer chamber for transferring the workpiece to be processed between the first deposition chamber and the second deposition chamber.
  • the thin film deposition apparatus further includes a transfer chamber for transferring processed between the first deposition chamber, the second deposition chamber, and the third deposition chamber Workpiece.
  • the magnetic thin film deposition chamber provided by the present invention is provided with a bias magnetic field device for forming a horizontal magnetic field above the susceptor for the magnetic film layer deposited on the workpiece to be processed
  • the in-plane anisotropy satisfies the need for a production-type device to prepare a magnetic film layer having in-plane anisotropy on a large-sized workpiece to be processed.
  • the thin film deposition apparatus provided by the present invention can deposit a magnetic film layer having in-plane anisotropy on a workpiece to be processed by using the above-described magnetic thin film deposition chamber provided by the present invention.
  • FIG. 1 is a cross-sectional view showing a magnetic thin film deposition chamber according to a first embodiment of the present invention
  • Figure 2A is an exploded view of the magnet group of Figure 1;
  • Figure 2B is a half cross-sectional view of the magnet assembly and the shield assembly of Figure 1;
  • FIG. 2C is a structural view of the magnet group of FIG. 1;
  • 2D is a structural view of another magnet group
  • 2E is a structural view of still another magnet group
  • 2F is a structural view of still another magnet group
  • 3A is a cross-sectional view showing a magnetic thin film deposition chamber according to a second embodiment of the present invention.
  • Figure 3B is an enlarged view of the area I in Figure 3A;
  • FIG. 4 is a structural view of a magnetic thin film laminate obtained by using the thin film deposition apparatus provided by the embodiment of the present invention.
  • the magnetic thin film deposition chamber includes a chamber body 1 and a shield assembly, wherein a target 3 is disposed at a top portion of the chamber body 1 and within the chamber body 1 A susceptor 2 is disposed below the target 3 for carrying the workpiece 7 to be processed.
  • the shielding assembly includes an upper shielding ring 5, a lower shielding ring 4 and a pressing ring 6, wherein the lower shielding ring 4 is disposed around the inner side of the side wall of the chamber body 1, and a support member 41 is disposed at a lower end of the lower shielding ring 4 for
  • the support ring 6 is supported by the support ring 41 and the lower shield ring 4, and is bent from the lower end of the lower shield ring 4 to the inner side thereof to form a "hook" shape.
  • the upper shield ring 5 is disposed around the inner side of the lower shield ring 4, and at least the lower half thereof covers the inner wall of at least the upper half of the lower shield ring 4.
  • the upper shield ring 5 and the lower shield ring 4 together block the side walls of the chamber body 1 for preventing the sputtered target material from depositing on the side walls of the chamber body 1.
  • the pressure ring 6 is used to press the edge region of the upper surface of the workpiece 7 to be processed when the base 2 is in the process position to fix the workpiece 7 to be processed on the base 2.
  • the pressure ring 6 is in contact with the support member 41 and supported by the support member 41; when the base 2 is in the process position, the pressure ring 6 is lifted up by the raised base 2 to be disengaged from the support.
  • the workpiece 41 can be fixed on the base 2 by means of the self-gravity of the pressure ring 6 .
  • the non-process position is located at the process position. Below.
  • Fig. 1 only schematically shows a portion of the chamber body 1 above the susceptor 2, and the bottom structure of the chamber body 1 is not shown.
  • the thin film deposition chamber further includes a bias magnetic field device for forming a horizontal magnetic field above the susceptor 2 for imparting in-plane anisotropy characteristics to the magnetic film layer deposited on the large-sized workpiece 7 to be processed.
  • the bias magnetic field device includes a magnet group disposed around the susceptor 2 for forming the horizontal magnetic field above the susceptor 2.
  • the magnet group includes two sets of sub-magnets (10, 11) in an arc shape, and the two sets of sub-magnets (10, 11) are disposed inside the chamber body 1 and symmetrically disposed around the base 2.
  • each set of sub-magnet sets includes a plurality of magnetic columns 101, and is arranged along the circumferential direction of the susceptor 2 to form an arc shape.
  • the plurality of magnetic columns 101 may be arranged at intervals or may be arranged closely.
  • the magnetic pole directions of the magnetic columns 101 in the two sets of sub-magnet groups are disposed in the radial direction of the susceptor 2, as shown in FIG.
  • the magnetic pole direction of each of the magnetic columns 101 is the radial direction of the susceptor 2, that is, the axis 101c of each of the magnetic columns 101 passes through the center point O of the section of the susceptor 2 (i.e., the inner circle in Fig. 2C).
  • the magnetic columns 101 are all horizontally disposed, and wherein the N pole of each of the magnetic columns 101 of the set of sub-magnets is directed to the susceptor 2, wherein the S pole of each of the magnetic columns 101 of the other set of sub-magnets is pointed Base 2.
  • the magnetic pole directions of the respective magnetic columns are parallel to each other, which can avoid or weaken the magnetic lines of force generated by the magnet group.
  • the edge is bent to ensure that a horizontal magnetic field is formed above the susceptor 2.
  • the projection shapes of the individual magnetic columns on the horizontal plane are different.
  • the magnetic pole faces of the plurality of magnetic columns in each group of sub-magnets collectively form a smooth continuous arc surface.
  • each set of sub-magnets the projection shapes of the respective magnetic columns on the horizontal plane are the same, and the end faces of the plurality of magnetic poles having the same magnetic poles together constitute a stepped circular arc surface.
  • each group of sub-magnets is arranged in an arc shape along the outer circumference of the susceptor 2, this can make the orientation of the N pole of any one of the magnetic columns 101 pointing to the susceptor 2 and the magnetic column 101 receiving the magnetic lines of force emitted by the N pole.
  • the spacing between the S poles of the susceptor 2 is the shortest, so that the number of magnetic lines of force distributed around the susceptor 2 can be increased, thereby effectively increasing the magnetic field strength of the unidirectional horizontal magnetic field, which is sufficient to induce the surface of the magnetic film.
  • the two sets of sub-magnet sets (10, 11) are located on both sides of the susceptor 2, this does not limit the size of the workpiece to be processed, and thus can be applied to a large-sized workpiece to be processed (for example, an 8-inch or 12-inch wafer). ).
  • the number, size and distribution density of the magnetic columns (the spacing between two adjacent magnetic columns) can be freely set according to specific needs, thereby improving the flexibility of setting the magnetic field strength and distribution density. .
  • the magnetic field strength of the magnet group of the above structure can reach 50 to 300 Gs.
  • the magnetic domains of the magnetic material deposited on the surface of the workpiece to be processed are arranged in the horizontal direction, so that an easy magnetization field can be formed in the magnetic domain arrangement direction.
  • forming a hard magnetic field in a direction perpendicular to the direction in which the magnetic domains are arranged that is, forming an in-plane anisotropy field, thereby obtaining an in-plane anisotropy magnetic film, thereby being suitable for a workpiece having a large size to be processed ( For example, an 8-inch or 12-inch wafer is used to prepare a magnetic film having in-plane anisotropy.
  • the distribution density of a part of the magnetic columns near the ends of the arc (or near the magnetic column 101a at the end of the arc) among the plurality of magnetic columns of each group of magnets can be made.
  • a distribution density of another portion of the magnetic column that is smaller than the middle of the arc (or near the magnetic column 101b located in the middle of the arc) and further, the arc is divided into an intermediate portion and an edge region on both sides of the intermediate portion, wherein
  • the distribution density of the magnetic columns located in the edge region is smaller than the distribution density of the magnetic columns located in the intermediate region.
  • each magnetic column is horizontally disposed.
  • the magnetic columns may be vertically disposed, and wherein the N poles of each of the plurality of sub magnet groups and the other group of the sub magnet groups The S poles of each of the magnetic columns are vertically upward to ensure that a horizontal magnetic field can be formed above the susceptor 2.
  • the magnetic pole directions of the respective magnetic columns that is, the orthographic projections of the axes of the respective magnetic columns on the radial section of the susceptor 2 are point-like, and the connection between the point and the center point of the radial section of the susceptor 2 It is arranged along the radial direction of the base 2.
  • the magnetic columns may also be disposed obliquely, and wherein the N pole of each of the magnetic poles of one of the set of sub-magnets and the S pole of each of the other set of sub-magnets are oriented toward the base 2 The direction is inclined upward to ensure that a horizontal magnetic field can be formed above the susceptor 2 without causing interference with the magnetic field in the vicinity of the target 3.
  • the magnetic pole directions of the respective magnetic columns that is, the orthographic projections of the axes of the respective magnetic columns on the radial section of the susceptor 2 are linear, which passes through the center point of the radial section of the susceptor 2.
  • a magnetic conductive member may be disposed in the chamber body 1 and around the base 2, the magnetic conductive member being simultaneously in the two sets of sub-magnets Each of the magnetic columns is connected vertically downward or obliquely downward to achieve magnetic conduction.
  • each set of sub-magnet sets is located above the support member 41 and between the lower shield member 4 and the pressure ring 6, thereby enabling The distance between each set of sub-magnets and the susceptor 2 is minimized, thereby increasing the magnetic field strength of the horizontal magnetic field to be sufficient to induce the in-plane anisotropy of the magnetic film.
  • the bias magnetic field device further includes a support plate 81, an outer fixing plate 82, an inner fixing plate 83, and an upper cover 84, wherein the support plate 81 is for supporting the magnet group and is provided at a plurality of portions thereof at the bottom thereof.
  • the support legs and screws 85 are fixedly coupled to the support member 41.
  • the outer fixing plate 82 and the inner fixing plate 83 are disposed on the support plate 81 by screws 86, and are respectively located inside and outside the sub-magnet group for respectively fixing the magnetic poles (N pole and S pole) at both ends of the sub magnet group.
  • the outer fixing plate 82 and the inner fixing plate 83 may be made of a magnetic conductive material or may be made of a non-magnetic material.
  • the upper cover 84 is located above the sub-magnet group, and is fixedly coupled to the outer fixing plate 82 and the inner fixing plate 83 by screws 87, respectively.
  • the sub-magnet group is located in a space surrounded by the support plate 81, the outer fixing plate 82, the inner fixing plate 83, and the upper cover 84. Since the support plate 81, the outer fixing plate 82 and the inner fixing plate 83 have a certain heat insulation effect, this can prevent the heat from the chamber body from being directly transmitted to the magnet group during the process, thereby preventing the magnet group from disappearing.
  • the magnetic induction function is invalid.
  • both the support plate 81 and the outer fixing plate 82 have an arc shape and match the arc shape of the arc-shaped magnet group.
  • the inner fixing plate 83 has a closed loop shape to facilitate positioning between the two sets of sub-magnet sets.
  • the inner fixing plate 83 can be made of a non-magnetic material, because if the inner fixing plate 83 is made of a magnetically permeable material, the closed annular structure forms a magnetic line close, thereby causing a decrease in the magnetic field strength.
  • the upper cover 84 has a closed ring shape, which can cover two sets of magnet groups and a gap therebetween, so that the sputtered target material can be prevented from depositing on the sub-magnet group, or from the two sets of magnet groups and A gap between the two is deposited on the support member 41.
  • the support plate 81 and the outer fixing plate 82 may also adopt a closed annular structure.
  • the inner fixing plate 83 and the upper cover 84 may also have an arc-shaped structure and match the arc shape of the arc-shaped sub-magnet group.
  • the arc-shaped inner fixing plate 83 may be made of a magnetically permeable material, or It can also be made of non-magnetic materials.
  • the magnet group includes two sets of sub-magnets (10, 11) in an arc shape, each set of sub-magnet sets includes a plurality of magnetic columns, and a plurality of magnetic columns are along the base 2 The circumferential spacing distribution.
  • the present invention is not limited thereto, and in practical applications, a magnet group of any other configuration may be employed.
  • the magnet group includes two segments of a circular arc-shaped magnet, that is, the magnet is a one-piece circular arc structure, and two segments of arc-shaped magnets are symmetric around the base, and one of the N-poles of the magnet and the S of the other of the magnets The poles all point to the base.
  • the magnet assembly includes a closed annular magnet that is formed by a permanent magnet material to form a horizontal magnetic field.
  • the magnetic thin film deposition chamber includes a chamber main body 21, a shielding assembly, and a bias magnetic field device, wherein a target 23 is disposed at a top portion of the chamber main body 21, and the cavity is provided in the chamber A susceptor 22 is disposed in the chamber body 21 and below the target 23 for carrying the workpiece 24 to be processed.
  • a bias magnetic field device is used to form a horizontal magnetic field above the susceptor 22 for imparting in-plane anisotropy to the magnetic film layer deposited on the workpiece 24 to be processed.
  • the bias magnetic field device includes two sets of sub-magnets (30, 31) in an arc shape, and the two sets of sub-magnets (30, 31) are disposed in the chamber body 21 and surround the base. 22 symmetric settings.
  • each set of sub-magnet sets includes a plurality of magnetic columns, and is distributed along the circumferential direction of the susceptor 22 to form an arc shape.
  • Each of the magnetic columns is horizontally disposed, and an N pole of each of the magnetic columns of one of the set of sub-magnets 30 and an S pole of each of the other of the set of sub-magnets 31 are directed to the susceptor 22.
  • the remaining structure and function of the magnet group are similar to those of the first embodiment described above, and will not be described again.
  • the magnetic field strength of the magnetic field generated by the magnet group of the above structure can reach 50 to 300 Gs.
  • the magnetic domains of the magnetic material deposited on the surface of the workpiece to be processed are arranged in the horizontal direction, thereby being able to form in the direction of the magnetic domain arrangement.
  • the magnetization field is easy, and a hard magnetic field is formed in a direction perpendicular to the direction in which the magnetic domains are arranged, that is, an in-plane anisotropy field is formed, thereby obtaining an in-plane anisotropy magnetic field.
  • Thin film and can be applied to larger workpieces to be processed (such as 8-inch or 12-inch wafers).
  • the structure and function of the above two sets of sub-magnet groups are similar to those of the first embodiment described above, and can also effectively increase the magnetic field strength of the horizontal magnetic field to be sufficient to induce the in-plane anisotropy of the magnetic film. Moreover, since the two sets of sub-magnet sets (30, 31) are located on both sides of the base 22, this does not limit the size of the workpiece to be processed, and thus can be applied to a large-sized workpiece to be processed (for example, an 8-inch or 12-inch wafer). ).
  • the magnetic columns in the two sets of sub-magnet sets are arranged such that the N pole of any one of the magnetic poles pointing to the base 22 and the receiving is emitted by the N pole
  • the spacing A between the S poles of the magnetic poles of the magnetic lines of force pointing to the base 22 is greater than or equal to the diameter of the workpiece to be processed.
  • the vertical spacing B between the horizontal centerline of each set of sub-magnet groups and the surface of the target is 84 mm.
  • a shield assembly is used to shield the bias magnetic field device from depositing target material on the bias magnetic field device.
  • the shielding assembly includes a shield 26, specifically, the shield 26 includes a first vertical portion 260, a horizontal portion 261, and a second vertical portion 262, wherein the first vertical portion 260 surrounds the side disposed on the chamber body 21
  • the inside of the wall serves to prevent the sputtered target material from being deposited on the sidewall of the chamber body 21.
  • the outer circumference of the horizontal portion 261 is connected to the lower end of the first vertical portion 260, the inner circumference of the horizontal portion 261 is connected to the upper end of the second vertical portion 262, and the horizontal portion 261 and the second vertical portion 262 are respectively located at the bias magnetic field device. Above and inside.
  • the magnetic thin film deposition chamber further includes a support member 263 and a pressure ring 25, wherein the support member 263 and the second vertical portion 262 of the shield member 26 are of a unitary structure and are bent from the lower end of the second vertical portion 262 toward the inner side thereof.
  • a "hook" shape is formed for supporting the pressure ring 25 for pressing the edge region of the upper surface of the workpiece 24 to be processed to fix the workpiece 24 to be processed to the base 22 when the base 22 is at the process position. on.
  • the pressure ring 25 is in contact with the support member 263 and supported by the support member 263; when the base 22 is in the process position, the pressure ring 25 is lifted up by the raised base 22 to be disengaged from the support.
  • the piece 263 is such that the workpiece 24 to be processed can be fixed to the base 22 by means of the self-gravity of the pressure ring 25, in the embodiment of the invention, the non-process position is below the process position.
  • the shield 26, the support member 263, and the pressure ring 25 cover the area between the susceptor 22 and the side wall of the chamber body 21, thereby preventing the sputtered target material from being deposited on the chamber body 21.
  • the shield 26, the support member 263, and the pressure ring 25 cover the area between the susceptor 22 and the side wall of the chamber body 21, thereby preventing the sputtered target material from being deposited on the chamber body 21.
  • annular boss 211 is disposed inside the side wall of the chamber body 21, and the annular boss 211 is located below the horizontal portion 261 and outside of the second vertical portion 262, so that the annular boss 211, the horizontal portion 261, The second vertical portion 262 and the side walls of the chamber body 21 together form an annular space 29 in which the bias magnetic field means is located.
  • the bias magnetic field device in this embodiment is located below the shield member 26.
  • the shield member 26 needs to be cleaned, only the shield member 26 needs to be removed without removing the bias magnetic field device. Thereby shortening the disassembly and assembly time and improving work efficiency.
  • the sputtering target material is not deposited on the magnet group under the shielding action of the shield 26 during the process.
  • the bias magnetic field device further includes a support plate 271, an outer fixing plate 272, an inner fixing plate 273, and an upper cover 274, wherein the support plate 271 is for supporting the sub-magnet group, and the support plate 271 is disposed in the ring shape
  • the boss 211 is fixedly connected thereto.
  • the outer fixing plate 272 and the inner fixing plate 273 are disposed on the support plate 271 and are respectively located inside and outside the sub-magnet group for respectively fixing the magnetic poles (N pole and S pole) of the sub magnet group, and the outer fixing plate 272
  • the inner fixing plate 273 may be made of a magnetically permeable material or may be made of a non-magnetic material.
  • the upper cover 274 is located above the sub-magnet group and is fixedly coupled to the outer fixing plate 272 and the inner fixing plate 273, respectively.
  • the support plate 271, the outer fixing plate 272, the inner fixing plate 273 and the upper cover 274 enclose a closed space in which the sub-magnet group is located. Since the support plate 271, the outer fixing plate 272 and the inner fixing plate 273 have a certain heat insulation effect, this can prevent the heat from the chamber body 21 from being directly transmitted to the magnet group during the process, thereby preventing the magnet group from disappearing.
  • the magnetic induction function is invalid.
  • the support plate 271, the outer fixing plate 272, the inner fixing plate 273, and/or the upper cover 274 have an arc shape or a closed annular shape; the support plate 271, the outer fixing plate 272, the inner fixing plate 273, and/or The arc shape of the upper cover 274 matches the arc shape of the sub-magnet group.
  • the bias magnetic field means is in contact with the upper surface of the annular boss 211. Since the annular boss 211 is connected to the side wall of the chamber body 21, this allows heat generated by the bias magnetic field device to be transmitted through the annular boss 211 and the side wall of the chamber body 21, thereby cooling the bias magnetic field device.
  • the lower surface of the support plate 271 may be attached to the upper surface of the annular boss 211 to increase the contact area between the bias magnetic field device and the annular boss 211, thereby improving the cooling effect.
  • a cooling passage 28 is provided in the side wall of the chamber main body 21, and in the circumferential direction thereof, and the annular boss 211 and the support plate 271 are cooled by passing a cooling medium to the cooling passage 28, thereby being able to take away
  • the heat of the magnetic field device is biased to prevent the magnet group from demagnetizing due to excessive temperature.
  • the cooling passages 28 may also be disposed in the annular boss 211 or in the side walls of the annular boss 211 and the chamber body 21.
  • the inner peripheral wall of the bias magnetic field device that is, the inner peripheral wall of the inner fixed plate 273 and the outer peripheral wall of the second vertical portion 262 have a horizontal gap D to ensure that the heat of the shield 26 is not transmitted to the annular convex
  • the stage 211 and the sub-magnet group can prevent the temperature of the sub-magnet group from being too high.
  • the horizontal gap D is greater than or equal to 0.5, preferably 2 mm, within which the temperature isolation effect is optimal.
  • the vertical gap C is less than or Equal to 5 mm, preferably 2 mm, within which the temperature isolation effect is optimal.
  • the magnetic thin film deposition chamber provided by the embodiment of the present invention is provided with a bias magnetic field device for forming a horizontal magnetic field above the susceptor for depositing on the workpiece to be processed.
  • the magnetic film layer on the workpiece has an in-plane anisotropy, thereby satisfying the need for a production type device to prepare a magnetic film layer having in-plane anisotropy on a large-sized workpiece to be processed.
  • an embodiment of the present invention further provides a thin film deposition apparatus including at least one first deposition chamber for depositing a magnetic film layer.
  • the first deposition chamber employs the above-described magnetic thin film deposition chamber provided by the embodiment of the present invention.
  • the thin film deposition apparatus provided by the embodiment of the invention is provided by using the embodiment provided by the embodiment of the invention
  • the magnetic thin film deposition chamber can deposit a magnetic film layer with in-plane anisotropy on the workpiece to be processed, thereby facilitating the application frequency of the magnetic film to meet the needs of production equipment.
  • the above thin film deposition apparatus is further used for depositing a magnetic thin film stack including a magnetic/isolation unit including at least one pair of magnetic film layers and an isolation layer which are alternately disposed.
  • the above thin film deposition apparatus includes at least one first deposition chamber for depositing a magnetic film layer, and at least one second deposition chamber for depositing the separation layer.
  • the thin film deposition apparatus further includes a transfer chamber for transporting the workpiece to be processed between the first deposition chamber, the second deposition chamber, and the third deposition chamber.
  • FIG. 4 is a structural view of a magnetic thin film laminate obtained by using the thin film deposition apparatus provided by the embodiment of the present invention.
  • the magnetic film stack includes a magnetic/isolation unit including a plurality of sets of film layers 4 including a magnetic film layer 2 and a separation layer 3, and a plurality of film layers 4 The magnetic film layer 2 and the isolation layer 3 are alternately arranged.
  • the isolation layer 3 in each group of film layers 4 is disposed on the magnetic film layer 2, so that the magnetic film in the upper film layer group 4 adjacent to the film layer group 4
  • the layer 2 is located on the spacer layer 3 in the group of film layers 4, i.e., the magnetic film layer 2 and the spacer layer 3 of the plurality of groups of film layers 4 are alternately arranged.
  • the magnetic film layer 2 and the isolation layer 3 in the above-mentioned isolation/magnetic film layer are disposed in pairs (a pair of film layer groups are a pair), and further on the isolation layer 3 of the uppermost film layer group.
  • a magnetic film layer 2 is provided, that is, the total number of layers of the magnetic film layer 2 is one more than the total number of layers of the isolation layer 3.
  • a magnetic film layer 2 may not be further disposed on the isolation layer 3 of the uppermost film layer group, and the total number of layers of the magnetic film layer 2 is equal to the total number of layers of the isolation layer 3.
  • the magnetic film laminate further comprises an adhesive layer 1 on which the magnetic film layer 2 in the lowermost film layer group 4 is disposed.
  • the tensile stress of the magnetic film layer 2 can be adjusted, thereby adjusting the tensile stress of the magnetic film laminate, thereby obtaining a magnetic thin film laminate having a large total thickness, and broadening the application of the inductor device prepared therefrom.
  • the adhesion layer 1 pair The stress adjustment of the magnetic film stack enables the magnetic film stack to be applied to micro-inductive devices fabricated from large-sized workpieces to be processed.
  • the thin film deposition apparatus further includes at least one third deposition chamber for depositing the above-described adhesive layer 1.
  • the thin film deposition apparatus further includes a transfer chamber for transporting the workpiece to be processed between the first deposition chamber, the second deposition chamber, and the third deposition chamber.
  • the thin film deposition apparatus provided by the embodiment of the present invention can generate a horizontal magnetic field with a large magnetic field strength above the susceptor by using the magnetic thin film deposition chamber provided by the above various embodiments of the present invention, which is sufficient to induce the in-plane of the magnetic thin film. It is anisotropic and does not limit the size of the workpiece to be machined, so it can be applied to larger workpieces to be processed (for example, 8-inch or 12-inch wafers).

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

一种磁性薄膜沉积腔室及薄膜沉积设备，包括腔室主体（1）和偏置磁场装置，在腔室主体内（1）设置有基座（2），用以承载待加工工件（7）。偏置磁场装置用于在基座（2）上方形成水平磁场，该水平磁场用于使沉积在待加工工件（7）上的磁性膜层具有面内各向异性。该薄膜沉积腔室能够在基座（2）上方形成足以诱发磁性薄膜的面内各向异性的水平磁场。

Description

磁性薄膜沉积腔室及薄膜沉积设备 技术领域
本发明涉及微电子技术领域，具体地，涉及一种磁性薄膜沉积腔室及薄膜沉积设备。
背景技术
随着技术的发展，集成电路制造工艺已可以显著缩小处理器的尺寸，但是仍然有一些诸如集成电感、噪声抑制器等的核心元器件在高频化、微型化、集成化等方面面临诸多困难。为了解决此问题，具有高磁化强度、高磁导率、高共振频率及高电阻率的软磁薄膜材料引起人们越来越多的关注。
虽然对软磁薄膜材料的关注主要集中在高磁导率和高磁化强度、以及低矫顽力和低损耗等性能上，但是，左右软磁薄膜材料发展的一个主要因素是它的截止频率。而通过调控软磁薄膜的面内单轴各向异性场，可以实现对软磁薄膜材料的截止频率的调节。而调控软磁薄膜的面内单轴各向异性场的一个常用方法是磁场诱导沉积，其具有工艺简单、无需增加工艺步骤、对芯片伤害小等的优点，是工业生产的首选方法。
但是，现有的磁场诱导沉积方法还无法应用到制备磁性薄膜的生产设备中，例如PVD设备。也就是说，现有的薄膜沉积腔室不具有诱发磁性薄膜的面内各向异性的功能。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种磁性薄膜沉积腔室及薄膜沉积设备，其能够在基座上方形成足以诱发磁 性薄膜的面内各向异性的水平磁场，满足生产型设备在大尺寸待加工工件上制备具有面内各向异性的磁性膜层的需要。
为实现本发明的目的而提供一种磁性薄膜沉积腔室，包括腔室主体，在所述腔室主体内设置有基座，用以承载待加工工件，还包括偏置磁场装置，所述偏置磁场装置用于在所述基座上方形成水平磁场，所述水平磁场用于使沉积在所述待加工工件上的磁性膜层具有面内各向异性。
优选的，所述偏置磁场装置包括：环绕所述基座设置的磁体组，所述磁体组用于在所述基座上方形成所述水平磁场。
优选的，所述磁体组包括两段呈圆弧状的磁体，二者环绕所述基座对称设置，且其中一段磁体N极与其中另一段磁体的S极均指向所述基座。
优选的，所述磁体组包括闭合的环状磁体，所述环状磁体由永磁材料采用整体充磁的方式形成所述水平磁场。
优选的，所述磁体组包括两组呈圆弧状的子磁体组，二者环绕所述基座对称设置；
每组所述子磁体组包括多个磁柱，且所述多个磁柱沿所述基座的周向排布。
优选的，每组所述子磁体组中，各个所述磁柱的磁极方向相互平行。
优选的，每组所述子磁体组中，各个所述磁柱的磁极方向沿所述基座的径向设置。
优选的，所述磁柱均水平设置，且其中一个所述子磁体组中的每个所述磁柱的N极与其中另一个所述子磁体组中的每个所述磁柱的S极均指向基座。
优选的，所述磁柱均竖直设置，且其中一个所述子磁体组中的每个 所述磁柱的N极与其中另一个所述子磁体组中的每个所述磁柱的S极均竖直向上。
优选的，所述磁柱均倾斜设置，且其中一个所述子磁体组中的每个所述磁柱的N极与其中另一个所述子磁体组中的每个所述磁柱的S极均朝向靠近所述基座的方向倾斜向上。
优选的，在每组所述子磁体组的多个磁柱中，靠近圆弧两端的一部分磁柱的分布密度小于靠近圆弧中间的另一部分磁柱的分布密度。
优选的，两组所述子磁体组中的所述磁柱被设置为：使任意一个所述磁柱的指向所述基座的N极与接收由该N极发出的磁力线的磁柱的指向所述基座的S极之间的间距大于或等于待加工工件的直径。
优选的，所述偏置磁场装置包括：
支撑板，用于支撑所述偏置磁场装置；
内固定板和外固定板，设置在所述支撑板上，且分别位于所述磁体组的内侧和外侧，用以分别固定所述偏置磁场装置的两端；
上盖，位于所述偏置磁场装置的上方，且分别与所述外固定板和内固定板固定连接；
所述偏置磁场装置位于由所述支撑板、所述外固定板、所述内固定板和所述上盖所围成的空间内。
优选的，所述磁性薄膜沉积腔室还包括遮蔽组件，所述遮蔽组件用于遮蔽所述偏置磁场装置，防止靶材材料沉积在所述偏置磁场装置上。
优选的，所述屏蔽组件包括：
屏蔽件，所述屏蔽件包括第一竖直部、水平部和第二竖直部，所述第一竖直部环绕设置在所述腔室主体的侧壁内侧，所述水平部的外周缘与所述第一竖直部的下端连接，所述水平部的内周缘与所述第二竖直部的上端连接；
所述水平部和第二竖直部分别位于所述偏置磁场装置的上方和内侧。
优选的，所述磁性薄膜沉积腔室还包括，支撑件和压环，其中，
所述压环用于压住所述待加工工件上表面的边缘区域；
所述支撑件与所述第二竖直部的下端连接，用以支撑所述压环。
优选的，在所述腔室主体的侧壁内侧设置有环形凸台，所述环形凸台位于所述水平部的下方以及所述第二竖直部的外侧；
所述偏置磁场装置位于由所述腔室主体的侧壁、所述环形凸台、所述水平部、所述第二竖直部共同构成的环形空间内。
优选的，所述偏置磁场装置与所述环形凸台上表面相接触。
优选的，在所述腔室主体的侧壁和/或所述环形凸台内沿其周向环绕设置有冷却通道，通过向所述冷却通道通入冷却媒介来冷却所述环形凸台和所述偏置磁场装置。
优选的，所述偏置磁场装置的内周壁与所述第二竖直部的外周壁之间具有水平间隙。
优选的，所述水平间隙大于或等于0.5mm。
优选的，所述偏置磁场装置的上表面与所述水平部的下表面之间具有竖直间隙。
优选的，所述竖直间隙小于或等于5mm。
作为另一个技术方案，本发明还提供一种薄膜沉积设备，包括至少一个用于沉积磁性膜层的第一沉积腔室，每个所述第一沉积腔室采用本发明提供的上述磁性薄膜沉积腔室。
优选的，所述薄膜沉积设备，用于沉积磁性薄膜叠层，所述磁性薄膜叠层包括磁性/隔离单元；所述磁性/隔离单元包括一组或多组膜层组，所述膜层组包括磁性膜层和隔离层，且多组所述膜层组的磁性膜层和隔 离层交替设置，所述薄膜沉积设备还包括：
至少一个用于沉积所述隔离层的第二沉积腔室。
优选的，所述磁性薄膜叠层还包括粘附层，
所述薄膜沉积设备还包括至少一个用于沉积所述粘附层的第三沉积腔室。
优选的，所述薄膜沉积设备还包括传输腔室，所述传输腔室用于在所述第一沉积腔室和所述第二沉积腔室之间传输被加工工件。
优选的，所述薄膜沉积设备还包括传输腔室，所述传输腔室用于在所述第一沉积腔室、所述第二沉积腔室和所述第三沉积腔室之间传输被加工工件。
本发明具有以下有益效果：
本发明提供的磁性薄膜沉积腔室，其设置有偏置磁场装置，该偏置磁场装置用于在基座上方形成水平磁场，该水平磁场用于使沉积在待加工工件上的磁性膜层具有面内各向异性，从而满足生产型设备在大尺寸待加工工件上制备具有面内各向异性的磁性膜层的需要。
本发明提供的薄膜沉积设备，其通过采用本发明提供的上述磁性薄膜沉积腔室，可以在待加工工件上沉积具有面内各向异性的磁性膜层。
附图说明
图1为本发明第一实施例提供的磁性薄膜沉积腔室的剖视图；
图2A为图1中磁体组的分解图；
图2B为图1中磁体组与屏蔽组件的半剖图；
图2C为图1中磁体组的结构图；
图2D为另一种磁体组的结构图；
图2E为又一种磁体组的结构图；
图2F为再一种磁体组的结构图；
图3A为本发明第二实施例提供的磁性薄膜沉积腔室的剖视图；
图3B为图3A中I区域的放大图；
图4为采用本发明实施例提供的薄膜沉积设备获得的磁性薄膜叠层的结构图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图来对本发明提供的磁性薄膜沉积腔室及薄膜沉积设备进行详细描述。
图1为本发明第一实施例提供的磁性薄膜沉积腔室的剖视图。图2A为图1中磁体组的分解图。图2B为图1中磁体组与屏蔽组件的半剖图。请一并参阅图1至图2B，磁性薄膜沉积腔室包括腔室主体1和屏蔽组件，其中，在该腔室主体1内的顶部设置有靶材3，且在该腔室主体1内，并且位于靶材3的下方设置有基座2，用以承载待加工工件7。屏蔽组件包括上屏蔽环5、下屏蔽环4和压环6，其中，下屏蔽环4环绕设置在腔室主体1的侧壁内侧，且在下屏蔽环4的下端设置有支撑件41，用于支撑压环6，该支撑件41与下屏蔽环4为一体式结构，且自下屏蔽环4的下端向其内侧弯曲形成“钩”状。上屏蔽环5环绕设置在下屏蔽环4的内侧，且至少是其下半部分覆盖下屏蔽环4的至少上半部分的内壁。上屏蔽环5和下屏蔽环4共同遮挡住腔室主体1的侧壁，用于防止溅射出的靶材材料沉积在腔室主体1的侧壁。压环6用于在基座2位于工艺位置时，压住待加工工件7上表面的边缘区域，以将待加工工件7固定在基座2上。在基座2处于非工艺位置时，压环6与上述支撑件41相接触并由支撑件41支撑；在基座2处于工艺位置时，压环6被上升的基座2顶起而脱离支撑件41，从而可以借助于压环6的自身重力而将待加工工件7固定在基座2上，本发明实施例中，非工艺位置位于工艺位置的 下方。
在进行工艺时，下屏蔽环4、支撑件41和压环6遮盖了基座2与腔室主体1的侧壁之间的区域，从而能够防止溅射出的靶材材料沉积在腔室主体1的底部以及侧壁上。图1仅示意性地示出了腔室主体1的位于基座2以上的部分，而未示出腔室主体1的底部结构。
薄膜沉积腔室还包括偏置磁场装置，用于在基座2上方形成水平磁场，该水平磁场用于使沉积在大尺寸的待加工工件7上的磁性膜层具有面内各向异性的特性，满足生产型设备制备具有面内各向异性的磁性膜层的需要。在本实施例中，该偏置磁场装置包括环绕基座2设置的磁体组，该磁体组用于在基座2的上方形成上述水平磁场。
具体地，磁体组包括两组呈圆弧状的子磁体组(10，11)，两组子磁体组(10，11)设置在腔室主体1的内侧，且环绕基座2对称设置。并且，如图2A所示，每组子磁体组包括多个磁柱101，且沿基座2的周向排布，形成圆弧状。多个磁柱101可以间隔排布，或者也可以紧密排布。两组子磁体组中的磁柱101的磁极方向沿基座2的径向设置，如图2C所示，在基座2的垂直于轴向的截面(即图2C中的内圆)上，各个磁柱101的磁极方向为基座2的径向，即，各个磁柱101的轴线101c穿过基座2的截面(即图2C中的内圆)的中心点O。
进一步地，磁柱101均水平设置，且其中一组子磁体组中的每个磁柱101的N极指向基座2，其中另一组子磁体组中的每个磁柱101的S极指向基座2。
当然，在实际应用中，如图2D所示，每组子磁体组中，各个磁柱的磁极方向(即，各个磁柱的轴线101c)相互平行，这可以避免或弱化由磁体组产生的磁力线的边缘弯曲现象，从而可以确保在基座2上方形成水平磁场。在这种情况下，在每组子磁体组中，各个磁柱在水平面上的投影形状不同， 具体来说，每组子磁体组中的多个磁柱的指向相同的磁极端面共同构成平滑连续的圆弧面。
或者，如图2E所示，在每组子磁体组中，各个磁柱在水平面上的投影形状相同，并且多个磁柱的磁极相同的端面共同构成阶梯状的圆弧面。
由于每组子磁体组沿基座2的外周排布成圆弧状，这可以使任意一个磁柱101的指向基座2的N极与接收由该N极发出的磁力线的磁柱101的指向基座2的S极之间的间距是最短的，从而可以使分布在基座2附近的磁力线的数量增加，进而有效增大了单向水平磁场的磁场强度，使之足以诱发磁性薄膜的面内各向异性。而且，由于两组子磁体组(10，11)位于基座2的两侧，这不会制约待加工工件的尺寸，从而可以适用于尺寸较大的待加工工件(例如8寸或12寸晶片)。
另外，在实际应用中，可以根据具体需要自由设定磁柱的数量、尺寸和分布密度(各个相邻两个磁柱之间的间距)，从而可以提高设定磁场强度和分布密度的灵活性。
上述结构的磁体组的磁场强度可以达到50～300Gs，在进行工艺时，沉积在待加工工件表面上的磁性材料的磁畴沿水平方向排列，从而能够在磁畴排列方向上形成易磁化场，而在与磁畴排列方向相互垂直的方向上形成难磁化场，即，形成面内各向异性场，进而获得面内各向异性的磁性薄膜，从而适于在尺寸较大的待加工工件(例如8寸或12寸晶片)制备具有面内各向异性的磁性薄膜。
以图2D为例，由于靠近圆弧两端的磁柱101的指向基座2的N极与接收由该N极发出的磁力线的磁柱101的指向基座2的S极之间的间距F1，小于靠近圆弧中间的磁柱101的指向基座2的N极与接收由该N极发出的磁力线的磁柱101的指向基座2的S极之间的间距F2，因此，在靠近圆弧两端的附近形成的磁场的强度大于在靠近圆弧中间的附近形成的磁场的强度，即， 磁场分布不均匀。
为了解决上述问题，如图2A所示，可以使在每组磁体组的多个磁柱中，靠近圆弧两端(或者靠近位于圆弧端部的磁柱101a)的一部分磁柱的分布密度小于靠近圆弧中间(或者靠近位于圆弧中间的磁柱101b)的另一部分磁柱的分布密度，进一步说，将圆弧分为中间区域和位于该中间区域的两侧的边缘区域，其中，位于该边缘区域中的磁柱的分布密度小于位于中间区域中的磁柱的分布密度。这样，可以起到补偿在中间区域形成的磁场强度的作用，使之能够与在边缘区域形成的磁场强度趋于一致，从而可以提高磁场均匀性。
需要说明的是，在本实施例中，每个磁柱水平设置。但是本发明并不局限于此，在实际应用中，也可以使磁柱均竖直设置，且其中一组子磁体组中的每个磁柱的N极与其中另一组子磁体组中的每个磁柱的S极均竖直向上，以保证能够在基座2的上方形成水平磁场。而且，各个磁柱的磁极方向，即，各个磁柱的轴线在基座2的径向截面上的正投影呈点状，该点与基座2的径向截面的中心点之间的连线沿基座2的径向设置。
或者，还可以使磁柱均倾斜设置，且其中一组子磁体组中的每个磁柱的N极与其中另一组子磁体组中的每个磁柱的S极均朝向靠近基座2的方向倾斜向上，以保证能够在基座2的上方形成水平磁场，同时不会对靶材3附近的磁场产生干扰。而且，各个磁柱的磁极方向，即，各个磁柱的轴线在基座2的径向截面上的正投影呈直线状，该直线穿过基座2的径向截面的中心点。
优选的，为了避免磁力线相互抵消，磁场强度减弱，使其中一组子磁体组中的每个磁柱竖直向下或者倾斜向下的磁极与其中另一组子磁体组中的相应的磁柱竖直向下或者倾斜向下的磁极磁导通，具体地，可以在腔室主体1内，且环绕在基座2的周围设置导磁件，该导磁件同时与两组子磁体组中的各个磁柱竖直向下或者倾斜向下的磁极连接，以实现磁导通。在本实施例中，每组子磁体组位于支撑件41的上方以及下屏蔽件4与压环6之间，从而能够 最大程度地减小每组子磁体组与基座2之间的距离，进而增大了水平磁场的磁场强度，使之足以诱发磁性薄膜的面内各向异性。
在本实施例中，偏置磁场装置还包括支撑板81、外固定板82、内固定板83和上盖84，其中，支撑板81用于支撑磁体组，并通过多个设置在其底部的支撑腿和螺钉85与支撑件41固定连接。外固定板82和内固定板83通过螺钉86设置在支撑板81上，且分别位于子磁体组的内侧和外侧，用以分别固定子磁体组的两端磁极(N极和S极)。
另外，外固定板82和内固定板83可以采用导磁材料制作，或者也可以采用不导磁材料制作。上盖84位于子磁体组的上方，且通过螺钉87分别与外固定板82和内固定板83固定连接。子磁体组位于由支撑板81、外固定板82、内固定板83和上盖84所围成的空间内。由于支撑板81、外固定板82和内固定板83具有一定的隔热效果，这可以避免在工艺时，来自腔室主体内的热量直接传递至磁体组上，进而可以防止磁体组的磁性消失，磁诱导功能失效。
在本实施例中，支撑板81和外固定板82均呈圆弧状，且与圆弧状的磁体组的圆弧形状相匹配。并且，内固定板83呈闭合的环状，以便于两组子磁体组之间的定位。优选的，内固定板83可以采用不导磁材料制作，这是因为若内固定板83采用导磁材料制作，其闭合环状的结构会形成磁力线闭合，从而造成磁场强度减小。
优选的，上盖84呈闭合的环状，其可以覆盖两组磁体组以及二者之间的间隙，从而可以避免溅射出的靶材材料沉积在子磁体组上，或者自两组磁体组以及二者之间的间隙沉积在支撑件41上。
当然，在实际应用中，支撑板81和外固定板82也可以采用闭合的环状结构。内固定板83和上盖84也可以采用圆弧状的结构，且与圆弧状的子磁体组的圆弧形状相匹配。圆弧状的内固定板83可以采用导磁材料制作，或者 也可以采用不导磁材料制作。
需要说明的是，在本实施例中，磁体组包括两组呈圆弧状的子磁体组(10，11)，每组子磁体组包括多个磁柱，且多个磁柱沿基座2的周向间隔分布。但是，本发明并不局限于此，在实际应用中，还可以采用其他任意结构的磁体组。例如，磁体组包括两段呈圆弧状的磁体，即，该磁体是一体式的圆弧结构，且两段呈圆弧状的磁体环绕基座对称，且其中一段磁体N极与其中另一段磁体中的S极均指向基座。又如，如图2F所示，磁体组包括闭合的环状磁体，该环状磁体由永磁材料采用整体充磁的方式形成水平磁场。
图3A为本发明第二实施例提供的磁性薄膜沉积腔室的剖视图。图3B为图3A中I区域的放大图。请一并参阅图3A和图3B，磁性薄膜沉积腔室包括腔室主体21、屏蔽组件和偏置磁场装置，其中，在该腔室主体21内的顶部设置有靶材23，且在该腔室主体21内，并且位于靶材23的下方设置有基座22，用以承载待加工工件24。
偏置磁场装置用于在基座22上方形成水平磁场，该水平磁场用于使沉积在待加工工件24上的磁性膜层具有面内各向异性。在本实施例中，该偏置磁场装置包括两组呈圆弧状的子磁体组(30，31)，两组子磁体组(30，31)设置在腔室主体21内，且环绕基座22对称设置。并且，与上述第一实施例相类似的，每组子磁体组包括多个磁柱，且沿基座22的周向间隔分布，形成圆弧状。每个磁柱水平设置，且其中一组子磁体组30中的每个磁柱的N极与其中另一组子磁体组31中的每个磁柱的S极均指向基座22。磁体组的其余结构和功能与上述第一实施例相类似，再此不再赘述。
由上述结构的磁体组产生的磁场的磁场强度可以达到50～300Gs，在进行工艺时，沉积在待加工工件表面上的磁性材料的磁畴沿水平方向排列，从而能够在磁畴排列方向上形成易磁化场，而在与磁畴排列方向相互垂直的方向上形成难磁化场，即，形成面内各向异性场，进而获得面内各向异性的磁 性薄膜，并能够适用于尺寸较大的待加工工件(例如8寸或12寸晶片)。
上述两组子磁体组的结构和功能与上述第一实施例相类似，同样可以有效增大水平磁场的磁场强度，使之足以诱发磁性薄膜的面内各向异性。而且，由于两组子磁体组(30，31)位于基座22的两侧，这不会制约待加工工件的尺寸，从而可以适用于尺寸较大的待加工工件(例如8寸或12寸晶片)。
优选的，为了实现磁体组产生的磁场能够覆盖整个待加工工件，两组子磁体组中的磁柱被设置为：使任意一个磁柱的指向基座22的N极与接收由该N极发出的磁力线的磁柱的指向基座22的S极之间的间距A大于或等于待加工工件直径。每组子磁体组的水平中心线与靶材表面之间的竖直间距B为84mm。
遮蔽组件用于遮蔽偏置磁场装置，防止靶材材料沉积在偏置磁场装置上。屏蔽组件包括屏蔽件26，具体地，该屏蔽件26包括第一竖直部260、水平部261和第二竖直部262，其中，第一竖直部260环绕设置在腔室主体21的侧壁内侧，用于防止溅射出的靶材材料沉积在腔室主体21的侧壁。水平部261的外周缘与第一竖直部260的下端连接，水平部261的内周缘与第二竖直部262的上端连接；水平部261和第二竖直部262分别位于偏置磁场装置的上方和内侧。
磁性薄膜沉积腔室还包括支撑件263和压环25，其中，支撑件263与屏蔽件26的第二竖直部262为一体式结构，且自第二竖直部262的下端向其内侧弯曲形成“钩”状，用于支撑压环25，压环25用于在基座22位于工艺位置时，压住待加工工件24上表面的边缘区域，以将待加工工件24固定在基座22上。在基座22处于非工艺位置时，压环25与上述支撑件263相接触并由支撑件263支撑；在基座22处于工艺位置时，压环25被上升的基座22顶起而脱离支撑件263，从而可以借助于压环25的自身重力而将待加工工件24固定在基座22上，本发明实施例中，非工艺位置位于工艺位置的下方。
在进行工艺时，屏蔽件26、支撑件263和压环25遮盖了基座22与腔室主体21的侧壁之间的区域，从而能够防止溅射出的靶材材料沉积在腔室主体21的底部以及侧壁上。
优选的，在腔室主体21的侧壁内侧设置有环形凸台211，该环形凸台211位于水平部261的下方以及第二竖直部262的外侧，从而环形凸台211、水平部261、第二竖直部262和腔室主体21的侧壁共同构成一环形空间29，偏置磁场装置位于该环形空间29的内部。
与上述第一实施例相比，本实施例中的偏置磁场装置位于屏蔽件26的下方，在需要清洗屏蔽件26时，仅需拆除屏蔽件26即可，而无需拆除偏置磁场装置，从而缩短了拆装时间，提高了工作效率。而且，在进行工艺时，在屏蔽件26的遮挡作用下，溅射出的靶材材料不会沉积在磁体组上。
在本实施例中，偏置磁场装置还包括支撑板271、外固定板272、内固定板273和上盖274，其中，支撑板271用于支撑子磁体组，并且该支撑板271设置在环形凸台211上，且与之固定连接。外固定板272和内固定板273设置在支撑板271上，且分别位于子磁体组的内侧和外侧，用以分别固定子磁体组的两端磁极(N极和S极)，外固定板272和内固定板273可以采用导磁材料制作，或者也可以采用不导磁材料制作。上盖274位于子磁体组的上方，且分别与外固定板272和内固定板273固定连接。支撑板271、外固定板272、内固定板273和上盖274围成的一封闭空间，子磁体组位于该封闭空间内。由于支撑板271、外固定板272和内固定板273具有一定的隔热效果，这可以避免在工艺时，来自腔室主体21的热量直接传递至磁体组上，从而可以防止磁体组的磁性消失，磁诱导功能失效。
在实际应用中，支撑板271、外固定板272、内固定板273和/或上盖274呈圆弧状或者闭合的环状；支撑板271、外固定板272、内固定板273和/或上盖274的圆弧形状与子磁体组的圆弧形状相匹配。
优选的，偏置磁场装置与环形凸台211的上表面相接触。由于环形凸台211与腔室主体21的侧壁连接，这使得偏置磁场装置产生的热量可以通过环形凸台211和腔室主体21的侧壁传递出去，从而对偏置磁场装置起到了冷却的作用。具体地，可以使上述支撑板271的下表面与环形凸台211的上表面相贴合，以增大偏置磁场装置与环形凸台211的接触面积，提高冷却效果。
进一步优选的，在腔室主体21的侧壁内，且沿其周向环绕设置有冷却通道28，通过向冷却通道28通入冷却媒介来冷却环形凸台211和支撑板271，从而可以带走偏置磁场装置的热量，以防止磁体组因温度过高而消磁。在实际应用中，上述冷却通道28也可以设置在环形凸台211内，或者环形凸台211和腔室主体21的侧壁内。
优选的，偏置磁场装置的内周壁，即，内固定板273的内周壁与第二竖直部262的外周壁之间具有水平间隙D，以保证屏蔽件26的热量不会传递至环形凸台211及子磁体组，从而可以防止子磁体组的温度过高。该水平间隙D大于或等于0.5，优选为2mm，在该范围内，温度隔离效果最佳。与之相类似的，偏置磁场装置的上表面与水平部261的下表面之间具有竖直间隙C，以保证屏蔽件26的热量不会传递至子磁体组，该竖直间隙C小于或等于5mm，优选为2mm，在该范围内，温度隔离效果最佳。
综上所述，本发明实施例提供的磁性薄膜沉积腔室，其设置有偏置磁场装置，该偏置磁场装置用于在基座上方形成水平磁场，该水平磁场用于使沉积在待加工工件上的磁性膜层具有面内各向异性，从而满足生产型设备在大尺寸待加工工件上制备具有面内各向异性的磁性膜层的需要。
作为另一个技术方案，本发明实施例还提供一种薄膜沉积设备，其包括至少一个用于沉积磁性膜层的第一沉积腔室。该第一沉积腔室采用了本发明实施例提供的上述磁性薄膜沉积腔室。
本发明实施例提供的薄膜沉积设备，其通过采用本发明实施例提供的上 述磁性薄膜沉积腔室，可以在待加工工件上沉积具有面内各向异性的磁性膜层，从而有利于扩大磁性薄膜的应用频率，满足生产型设备的需要。
优选的，上述薄膜沉积设备还用于沉积磁性薄膜叠层，该磁性薄膜叠层包括磁性/隔离单元，该磁性/隔离单元包括至少一对交替设置的磁性膜层和隔离层。上述薄膜沉积设备包括至少一个用于沉积磁性膜层的第一沉积腔室，以及至少一个用于沉积所述隔离层的第二沉积腔室。优选的，薄膜沉积设备还包括传输腔室，该传输腔室用于在第一沉积腔室、第二沉积腔室和第三沉积腔室之间传输被加工工件。
具体地，图4为采用本发明实施例提供的薄膜沉积设备获得的磁性薄膜叠层的结构图。请参阅图4，磁性薄膜叠层包括磁性/隔离单元，该磁性/隔离单元包括多组膜层组4，该膜层组4包括磁性膜层2和隔离层3，且多组膜层组4的磁性膜层2和隔离层3交替设置。
具体来说，在本实施例中，每组膜层组4中的隔离层3设置在磁性膜层2上，从而与该膜层组4相邻的上一层膜层组4中的磁性膜层2位于该组膜层组4中的隔离层3上，即，实现多组膜层组4的磁性膜层2和隔离层3交替设置。
在本实施例中，上述隔离/磁膜层中的磁性膜层2和隔离层3成对设置(一组膜层组为一对)，并且，在最上层膜层组的隔离层3上进一步设置一层磁性膜层2，即，磁性膜层2的总层数比隔离层3的总层数多一层。当然，在实际应用中，也可以不在最上层膜层组的隔离层3上进一步设置一层磁性膜层2，此时磁性膜层2的总层数与隔离层3的总层数相等。
优选的，磁性薄膜叠层还包括粘附层1，最下层的膜层组4中的磁性膜层2设置在该粘附层1上。借助上述粘附层1，可以调节磁性膜层2的拉应力，从而调节磁性薄膜叠层的拉应力，进而可以制得总厚度较大的磁性薄膜叠层，拓宽由其制备的电感器件的应用频率的范围。此外，由于粘附层1对 磁性薄膜叠层的应力调节作用，这使得磁性薄膜叠层能够应用在大尺寸待加工工件制作的微电感器件。
若设置上述粘附层1，则薄膜沉积设备还包括至少一个第三沉积腔室，用于沉积上述粘附层1。优选的，薄膜沉积设备还包括传输腔室，该传输腔室用于在第一沉积腔室、第二沉积腔室和第三沉积腔室之间传输被加工工件。
本发明实施例提供的薄膜沉积设备，其通过采用本发明上述各个实施例提供的磁性薄膜沉积腔室，不仅可以在基座上方产生磁场强度较大的水平磁场，足以诱发磁性薄膜的面内各向异性，而且不会制约待加工工件的尺寸，从而可以适用于尺寸较大的待加工工件(例如8寸或12寸晶片)。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (28)

  1. 一种磁性薄膜沉积腔室，包括腔室主体，在所述腔室主体内设置有基座，用以承载待加工工件，其特征在于，还包括偏置磁场装置，所述偏置磁场装置用于在所述基座上方形成水平磁场，所述水平磁场用于使沉积在所述待加工工件上的磁性膜层具有面内各向异性。
  2. 根据权利要求1所述的磁性薄膜沉积腔室，其特征在于，所述偏置磁场装置包括：环绕所述基座设置的磁体组，所述磁体组用于在所述基座上方形成所述水平磁场。
  3. 根据权利要求2所述的磁性薄膜沉积腔室，其特征在于，所述磁体组包括两段呈圆弧状的磁体，二者环绕所述基座对称设置，且其中一段磁体N极与其中另一段磁体的S极均指向所述基座。
  4. 根据权利要求2所述的磁性薄膜沉积腔室，其特征在于，所述磁体组包括闭合的环状磁体，所述环状磁体由永磁材料采用整体充磁的方式形成所述水平磁场。
  5. 根据权利要求2所述的磁性薄膜沉积腔室，其特征在于，所述磁体组包括两组呈圆弧状的子磁体组，二者环绕所述基座对称设置；
    每组所述子磁体组包括多个磁柱，且所述多个磁柱沿所述基座的周向排布。
  6. 根据权利要求5所述的磁性薄膜沉积腔室，其特征在于，每组所述子磁体组中，各个所述磁柱的磁极方向相互平行。
  7. 根据权利要求5所述的磁性薄膜沉积腔室，其特征在于，每组所述子磁体组中，各个所述磁柱的磁极方向沿所述基座的径向设置。
  8. 根据权利要求6或7所述的磁性薄膜沉积腔室，其特征在于，所述磁柱均水平设置，且其中一个所述子磁体组中的每个所述磁柱的N极与其中另一个所述子磁体组中的每个所述磁柱的S极均指向基座。
  9. 根据权利要求6或7所述的磁性薄膜沉积腔室，其特征在于，所述磁柱均竖直设置，且其中一个所述子磁体组中的每个所述磁柱的N极与其中另一个所述子磁体组中的每个所述磁柱的S极均竖直向上。
  10. 根据权利要求6或7所述的磁性薄膜沉积腔室，其特征在于，所述磁柱均倾斜设置，且其中一个所述子磁体组中的每个所述磁柱的N极与其中另一个所述子磁体组中的每个所述磁柱的S极均朝向靠近所述基座的方向倾斜向上。
  11. 根据权利要求5任意一项所述的磁性薄膜沉积腔室，其特征在于，在每组所述子磁体组的多个磁柱中，靠近圆弧两端的一部分磁柱的分布密度小于靠近圆弧中间的另一部分磁柱的分布密度。
  12. 根据权利要求5所述的磁性薄膜沉积腔室，其特征在于，两组所述子磁体组中的所述磁柱被设置为：使任意一个所述磁柱的指向所述基座的N极与接收由该N极发出的磁力线的磁柱的指向所述基座的S极之间的间距大于或等于待加工工件的直径。
  13. 根据权利要求1-7，11-12任意一项所述的磁性薄膜沉积腔室，其特征在于，所述偏置磁场装置包括：
    支撑板，用于支撑所述偏置磁场装置；
    内固定板和外固定板，设置在所述支撑板上，且分别位于所述磁体组的内侧和外侧，用以分别固定所述偏置磁场装置的两端；
    上盖，位于所述偏置磁场装置的上方，且分别与所述外固定板和内固定板固定连接；
    所述偏置磁场装置位于由所述支撑板、所述外固定板、所述内固定板和所述上盖所围成的空间内。
  14. 根据权利要求1-7，11-12任意一项所述的磁性薄膜沉积腔室，其特征在于，所述磁性薄膜沉积腔室还包括遮蔽组件，所述遮蔽组件用于遮蔽所述偏置磁场装置，防止靶材材料沉积在所述偏置磁场装置上。
  15. 根据权利要求14所述的磁性薄膜沉积腔室，其特征在于，所述屏蔽组件包括：
    屏蔽件，所述屏蔽件包括第一竖直部、水平部和第二竖直部，所述第一竖直部环绕设置在所述腔室主体的侧壁内侧，所述水平部的外周缘与所述第一竖直部的下端连接，所述水平部的内周缘与所述第二竖直部的上端连接；
    所述水平部和第二竖直部分别位于所述偏置磁场装置的上方和内侧。
  16. 根据权利要求15所述的磁性薄膜沉积腔室，其特征在于，所述磁性薄膜沉积腔室还包括，支撑件和压环，其中，
    所述压环用于压住所述待加工工件上表面的边缘区域；
    所述支撑件与所述第二竖直部的下端连接，用以支撑所述压环。
  17. 根据权利要求16所述的磁性薄膜沉积腔室，其特征在于，在 所述腔室主体的侧壁内侧设置有环形凸台，所述环形凸台位于所述水平部的下方以及所述第二竖直部的外侧；
    所述偏置磁场装置位于由所述腔室主体的侧壁、所述环形凸台、所述水平部、所述第二竖直部共同构成的环形空间内。
  18. 根据权利要求17所述的磁性薄膜沉积腔室，其特征在于，所述偏置磁场装置与所述环形凸台上表面相接触。
  19. 根据权利要求18所述的磁性薄膜沉积腔室，其特征在于，
    在所述腔室主体的侧壁和/或所述环形凸台内沿其周向环绕设置有冷却通道，通过向所述冷却通道通入冷却媒介来冷却所述环形凸台和所述偏置磁场装置。
  20. 根据权利要求18所述的磁性薄膜沉积腔室，其特征在于，所述偏置磁场装置的内周壁与所述第二竖直部的外周壁之间具有水平间隙。
  21. 根据权利要求20所述的磁性薄膜沉积腔室，其特征在于，所述水平间隙大于或等于0.5mm。
  22. 根据权利要求18所述的磁性薄膜沉积腔室，其特征在于，所述偏置磁场装置的上表面与所述水平部的下表面之间具有竖直间隙。
  23. 根据权利要求22所述的磁性薄膜沉积腔室，其特征在于，所述竖直间隙小于或等于5mm。
  24. 一种薄膜沉积设备，包括至少一个用于沉积磁性膜层的第一沉 积腔室，其特征在于，每个所述第一沉积腔室采用权利要求1-23任意一项所述的磁性薄膜沉积腔室。
  25. 根据权利要求24所述的薄膜沉积设备，其特征在于，所述薄膜沉积设备，用于沉积磁性薄膜叠层，所述磁性薄膜叠层包括磁性/隔离单元；所述磁性/隔离单元包括一组或多组膜层组，所述膜层组包括磁性膜层和隔离层，且多组所述膜层组的磁性膜层和隔离层交替设置，所述薄膜沉积设备还包括：
    至少一个用于沉积所述隔离层的第二沉积腔室。
  26. 根据权利要求25所述的薄膜沉积设备，其特征在于，所述磁性薄膜叠层还包括粘附层，
    所述薄膜沉积设备还包括至少一个用于沉积所述粘附层的第三沉积腔室。
  27. 根据权利要求25所述的薄膜沉积设备，其特征在于，所述薄膜沉积设备还包括传输腔室，所述传输腔室用于在所述第一沉积腔室和所述第二沉积腔室之间传输被加工工件。
  28. 根据权利要求26所述的薄膜沉积设备，其特征在于，所述薄膜沉积设备还包括传输腔室，所述传输腔室用于在所述第一沉积腔室、所述第二沉积腔室和所述第三沉积腔室之间传输被加工工件。
PCT/CN2017/106688 2016-10-31 2017-10-18 磁性薄膜沉积腔室及薄膜沉积设备 Ceased WO2018077090A1 (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019522851A JP7030804B2 (ja) 2016-10-31 2017-10-18 磁性薄膜堆積チャンバおよび薄膜堆積装置
KR1020197013886A KR102138811B1 (ko) 2016-10-31 2017-10-18 자성 박막 증착 챔버 및 박막 증착 설비
SG11201903540XA SG11201903540XA (en) 2016-10-31 2017-10-18 Magnetic thin film deposition chamber and thin film deposition apparatus
US16/386,651 US10622145B2 (en) 2016-10-31 2019-04-17 Magnetic thin film deposition chamber and thin film deposition apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610929208.0 2016-10-31
CN201610929208.0A CN108010718B (zh) 2016-10-31 2016-10-31 磁性薄膜沉积腔室及薄膜沉积设备

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US16/386,651 Continuation US10622145B2 (en) 2016-10-31 2019-04-17 Magnetic thin film deposition chamber and thin film deposition apparatus

Publications (1)

Publication Number Publication Date
WO2018077090A1 true WO2018077090A1 (zh) 2018-05-03

Family

ID=62024467

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/106688 Ceased WO2018077090A1 (zh) 2016-10-31 2017-10-18 磁性薄膜沉积腔室及薄膜沉积设备

Country Status (7)

Country Link
US (1) US10622145B2 (zh)
JP (1) JP7030804B2 (zh)
KR (1) KR102138811B1 (zh)
CN (1) CN108010718B (zh)
SG (1) SG11201903540XA (zh)
TW (1) TWI668717B (zh)
WO (1) WO2018077090A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112359335A (zh) * 2020-10-23 2021-02-12 北京北方华创微电子装备有限公司 半导体工艺设备及其工艺腔室

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111101097A (zh) * 2018-10-26 2020-05-05 北京北方华创微电子装备有限公司 反应腔室及薄膜沉积设备
WO2020096885A1 (en) 2018-11-05 2020-05-14 Applied Materials, Inc. Magnetic housing systems
CN112011771B (zh) * 2019-05-30 2022-02-22 北京北方华创微电子装备有限公司 偏置磁场控制方法、磁性薄膜沉积方法、腔室及设备
US11959174B2 (en) * 2020-02-28 2024-04-16 Applied Materials, Inc. Shunt door for magnets in plasma process chamber
US12020965B2 (en) * 2020-10-21 2024-06-25 Applied Materials, Inc. Magnetic holding structures for plasma processing applications
TWI749966B (zh) * 2020-12-25 2021-12-11 天虹科技股份有限公司 薄膜沉積設備
CN114717514B (zh) * 2021-01-06 2023-12-15 鑫天虹(厦门)科技有限公司 薄膜沉积设备
US12027352B2 (en) 2021-05-28 2024-07-02 Applied Materials, Inc. Apparatus for generating magnetic fields on substrates during semiconductor processing
US11915915B2 (en) * 2021-05-28 2024-02-27 Applied Materials, Inc. Apparatus for generating magnetic fields during semiconductor processing
US20220384194A1 (en) * 2021-05-28 2022-12-01 Applied Materials, Inc. Apparatus for generating magnetic fields on substrates during semiconductor processing
CN113628830B (zh) * 2021-08-17 2025-07-22 楚天科技股份有限公司 一种适用于诊断试剂磁微珠包被产业化的磁体及设备
US12112890B2 (en) * 2021-09-17 2024-10-08 Applied Materials, Inc. Top magnets for decreased non-uniformity in PVD
WO2023069158A1 (en) * 2021-10-21 2023-04-27 Applied Materials, Inc. Apparatus for generating magnetic fields on substrates during semiconductor processing
CN114196931B (zh) * 2021-12-21 2023-09-08 北京北方华创微电子装备有限公司 半导体腔室

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1135084A (zh) * 1995-01-25 1996-11-06 松下电器产业株式会社 软磁性薄膜的制造方法
CN101047229A (zh) * 2006-03-27 2007-10-03 株式会社东芝 磁阻效应元件、磁头以及磁盘设备
CN101901868A (zh) * 2009-05-27 2010-12-01 佳能安内华股份有限公司 制造磁性器件的方法和设备
US20150206657A1 (en) * 2013-10-30 2015-07-23 The Board Of Trustees Of The Leland Stanford Junior University Integrated Magnetic Devices with Multi-Axial Magnetic Anisotropy
CN204732294U (zh) * 2015-06-30 2015-10-28 贵州雅光电子科技股份有限公司 一种各向异性磁阻坡膜合金固定易磁化轴的制备装置
CN105679528A (zh) * 2014-11-18 2016-06-15 中国科学院宁波材料技术与工程研究所 一种磁各向异性可调控的大面积柔性磁性薄膜的制作设备
CN105779952A (zh) * 2014-12-24 2016-07-20 北京北方微电子基地设备工艺研究中心有限责任公司 磁控管组件及磁控溅射设备

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106009A (en) * 1980-12-23 1982-07-01 Citizen Watch Co Ltd Thin magnet and manufacture thereof
US5083112A (en) * 1990-06-01 1992-01-21 Minnesota Mining And Manufacturing Company Multi-layer thin-film eas marker
US6289546B1 (en) * 1999-03-29 2001-09-18 Stephen D. Harada Toothbrush and method of fabricating same
JP3892996B2 (ja) * 1999-09-02 2007-03-14 東京エレクトロン株式会社 マグネトロンプラズマ処理装置
JP2002069631A (ja) 2000-08-24 2002-03-08 Hitachi Ltd スパッタ方法及びその装置
US6743340B2 (en) * 2002-02-05 2004-06-01 Applied Materials, Inc. Sputtering of aligned magnetic materials and magnetic dipole ring used therefor
CN1768401A (zh) * 2003-03-27 2006-05-03 独立行政法人物质·材料研究机构 具有垂直磁各向异性的FePt磁性薄膜及其制造方法
CN100383897C (zh) * 2004-09-02 2008-04-23 中国科学院物理研究所 一种铁磁/反铁磁多层膜钉扎体系及其制备方法
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
JP6048319B2 (ja) * 2013-06-06 2016-12-21 東京エレクトロン株式会社 マグネトロンスパッタ装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1135084A (zh) * 1995-01-25 1996-11-06 松下电器产业株式会社 软磁性薄膜的制造方法
CN101047229A (zh) * 2006-03-27 2007-10-03 株式会社东芝 磁阻效应元件、磁头以及磁盘设备
CN101901868A (zh) * 2009-05-27 2010-12-01 佳能安内华股份有限公司 制造磁性器件的方法和设备
US20150206657A1 (en) * 2013-10-30 2015-07-23 The Board Of Trustees Of The Leland Stanford Junior University Integrated Magnetic Devices with Multi-Axial Magnetic Anisotropy
CN105679528A (zh) * 2014-11-18 2016-06-15 中国科学院宁波材料技术与工程研究所 一种磁各向异性可调控的大面积柔性磁性薄膜的制作设备
CN105779952A (zh) * 2014-12-24 2016-07-20 北京北方微电子基地设备工艺研究中心有限责任公司 磁控管组件及磁控溅射设备
CN204732294U (zh) * 2015-06-30 2015-10-28 贵州雅光电子科技股份有限公司 一种各向异性磁阻坡膜合金固定易磁化轴的制备装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112359335A (zh) * 2020-10-23 2021-02-12 北京北方华创微电子装备有限公司 半导体工艺设备及其工艺腔室
JP2023545205A (ja) * 2020-10-23 2023-10-26 北京北方華創微電子装備有限公司 半導体プロセス装置及びそのプロセスチャンバ
JP7430846B2 (ja) 2020-10-23 2024-02-13 北京北方華創微電子装備有限公司 半導体プロセス装置及びそのプロセスチャンバ
US12198913B2 (en) 2020-10-23 2025-01-14 Beijing Naura Microelectronics Equipment Co., Ltd. Semiconductor process apparatus and process chamber

Also Published As

Publication number Publication date
US20190244754A1 (en) 2019-08-08
KR102138811B1 (ko) 2020-07-28
TW201818434A (zh) 2018-05-16
CN108010718A (zh) 2018-05-08
TWI668717B (zh) 2019-08-11
JP2019533767A (ja) 2019-11-21
JP7030804B2 (ja) 2022-03-07
SG11201903540XA (en) 2019-05-30
CN108010718B (zh) 2020-10-13
KR20190062574A (ko) 2019-06-05
US10622145B2 (en) 2020-04-14

Similar Documents

Publication Publication Date Title
US10622145B2 (en) Magnetic thin film deposition chamber and thin film deposition apparatus
TWI276174B (en) Magnetic field generator for magnetron plasma
TWI672725B (zh) 製程腔室以及電容耦合電漿裝置
US9659706B2 (en) Methods for making radially anisotropic thin-film magnetic torroidal cores
JP7430846B2 (ja) 半導体プロセス装置及びそのプロセスチャンバ
TWI671419B (zh) 磁性薄膜沉積腔室及薄膜沉積裝置
US10854434B2 (en) Magnetron, magnetron sputtering chamber, and magnetron sputtering apparatus
WO2015139503A1 (zh) 磁控溅射腔室及磁控溅射设备
JPH04211146A (ja) 静電チャック
TW201423864A (zh) 電漿設備及其反應腔室
TW202113113A (zh) 偏置磁場控制方法、磁性薄膜沉積方法、腔室及設備
JP2012234930A5 (zh)
CN111101097A (zh) 反应腔室及薄膜沉积设备
TW202513840A (zh) 一種半導體製程腔室和半導體製程設備
TWI891890B (zh) 磁控管系統
CN207331049U (zh) 磁性薄膜沉积腔室及薄膜沉积设备
JP6901557B2 (ja) 磁性薄膜積層構造体の堆積方法、磁性薄膜積層構造体およびマイクロインダクタンス装置
CN108172396B (zh) 磁性薄膜沉积腔室及薄膜沉积设备
TWI916039B (zh) 磁性裝置
JPH0414216A (ja) 気相成長装置
CN111996505A (zh) 磁控溅射铁磁性靶材的装置
JPS6223980A (ja) マグネトロンスパツタリング用タ−ゲツト

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17863688

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2019522851

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20197013886

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 17863688

Country of ref document: EP

Kind code of ref document: A1